JP7003058B2 - 発光素子、発光素子パッケージおよび発光モジュール - Google Patents

発光素子、発光素子パッケージおよび発光モジュール Download PDF

Info

Publication number
JP7003058B2
JP7003058B2 JP2018554374A JP2018554374A JP7003058B2 JP 7003058 B2 JP7003058 B2 JP 7003058B2 JP 2018554374 A JP2018554374 A JP 2018554374A JP 2018554374 A JP2018554374 A JP 2018554374A JP 7003058 B2 JP7003058 B2 JP 7003058B2
Authority
JP
Japan
Prior art keywords
layer
light emitting
composition
semiconductor layer
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018554374A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019514224A (ja
JP2019514224A5 (enExample
Inventor
キム，ミョンヒ
ホン，チョンヨプ
Original Assignee
スージョウ レキン セミコンダクター カンパニー リミテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020160046356A external-priority patent/KR102486036B1/ko
Priority claimed from KR1020160049327A external-priority patent/KR20170120878A/ko
Application filed by スージョウ レキン セミコンダクター カンパニー リミテッド filed Critical スージョウ レキン セミコンダクター カンパニー リミテッド
Publication of JP2019514224A publication Critical patent/JP2019514224A/ja
Publication of JP2019514224A5 publication Critical patent/JP2019514224A5/ja
Priority to JP2021215211A priority Critical patent/JP7270300B2/ja
Application granted granted Critical
Publication of JP7003058B2 publication Critical patent/JP7003058B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N5/00—Radiation therapy
    • A61N5/06—Radiation therapy using light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling

Landscapes

  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Biomedical Technology (AREA)
  • Pathology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Animal Behavior & Ethology (AREA)
  • General Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Veterinary Medicine (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
JP2018554374A 2016-04-15 2017-04-14 発光素子、発光素子パッケージおよび発光モジュール Active JP7003058B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2021215211A JP7270300B2 (ja) 2016-04-15 2021-12-28 発光素子

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR10-2016-0046356 2016-04-15
KR1020160046356A KR102486036B1 (ko) 2016-04-15 2016-04-15 자외선 발광소자, 자외선 발광소자 제조방법 및 발광소자 패키지
KR10-2016-0049327 2016-04-22
KR1020160049327A KR20170120878A (ko) 2016-04-22 2016-04-22 발광모듈 및 의료기기
PCT/KR2017/004065 WO2017179944A1 (ko) 2016-04-15 2017-04-14 발광소자, 발광소자 패키지 및 발광모듈

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2021215211A Division JP7270300B2 (ja) 2016-04-15 2021-12-28 発光素子

Publications (3)

Publication Number Publication Date
JP2019514224A JP2019514224A (ja) 2019-05-30
JP2019514224A5 JP2019514224A5 (enExample) 2020-05-14
JP7003058B2 true JP7003058B2 (ja) 2022-02-04

Family

ID=60042189

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2018554374A Active JP7003058B2 (ja) 2016-04-15 2017-04-14 発光素子、発光素子パッケージおよび発光モジュール
JP2021215211A Active JP7270300B2 (ja) 2016-04-15 2021-12-28 発光素子

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2021215211A Active JP7270300B2 (ja) 2016-04-15 2021-12-28 発光素子

Country Status (5)

Country Link
US (1) US10644194B2 (enExample)
EP (1) EP3444841B1 (enExample)
JP (2) JP7003058B2 (enExample)
CN (2) CN115881868A (enExample)
WO (1) WO2017179944A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017136346A1 (en) 2016-02-05 2017-08-10 Boston Scientfic Neuromodulation Corporation Implantable optical stimulation lead
JP6803411B2 (ja) * 2017-02-17 2020-12-23 Ｄｏｗａエレクトロニクス株式会社 深紫外発光素子およびその製造方法
JP6486401B2 (ja) * 2017-03-08 2019-03-20 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
JP6438542B1 (ja) * 2017-07-27 2018-12-12 日機装株式会社 半導体発光素子
CN109473510B (zh) * 2017-09-07 2022-05-13 佳能株式会社 发光晶闸管、发光晶闸管阵列、曝光头和图像形成设备
WO2020095826A1 (ja) * 2018-11-05 2020-05-14 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体発光素子およびその製造方法
TWD201271S (zh) * 2018-11-08 2019-12-01 晶元光電股份有限公司 發光二極體之部分
US11552217B2 (en) * 2018-11-12 2023-01-10 Epistar Corporation Semiconductor device
CN111725369B (zh) * 2019-03-20 2021-11-12 隆达电子股份有限公司 发光装置
TWD204008S (zh) * 2019-03-22 2020-04-11 晶元光電股份有限公司 發光裝置之部分
US11424299B2 (en) * 2019-04-08 2022-08-23 Electronics And Telecommunications Research Institute Pressure sensitive display device having touch electrode and light emitting layer
CN110581205A (zh) * 2019-08-28 2019-12-17 映瑞光电科技(上海)有限公司 GaN基发光二极管外延结构及其制备方法
KR102848810B1 (ko) * 2020-06-01 2025-08-25 삼성디스플레이 주식회사 화소, 그 제조 방법 및 그를 포함하는 표시 장치
EP4288145B1 (en) 2021-04-08 2025-01-15 Boston Scientific Neuromodulation Corporation Photobiomodulation system and delivery device
CN113903842B (zh) * 2021-09-24 2022-12-20 厦门三安光电有限公司 倒装发光二极管和发光装置
JP7405902B2 (ja) * 2022-05-20 2023-12-26 日機装株式会社 窒化物半導体発光素子
EP4565319A1 (en) * 2022-08-22 2025-06-11 Boston Scientific Neuromodulation Corporation Photobiomodulation systems including an electrode disposed on or over a light emitter and methods of making and using
EP4398258A3 (en) 2023-01-04 2024-08-28 Boston Scientific Neuromodulation Corporation Systems and methods incorporating a light therapy user interface for optical modulation
CN115863502B (zh) * 2023-02-21 2024-03-19 江西兆驰半导体有限公司 一种led外延片、外延生长方法及led芯片
WO2024181858A1 (ko) * 2023-02-28 2024-09-06 연세대학교 산학협력단 2d 발광 박막, 이의 제조방법, 이를 포함하는 발광 소자 및 디스플레이 패널

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001274096A (ja) 2000-03-24 2001-10-05 Sanyo Electric Co Ltd 窒化物系半導体素子およびその製造方法
JP2005527988A (ja) 2002-12-04 2005-09-15 エムコア・コーポレイション 窒化ガリウムベース素子及び製造方法
JP2009130097A (ja) 2007-11-22 2009-06-11 Sharp Corp Ｉｉｉ族窒化物半導体発光素子及びその製造方法
JP2012124443A (ja) 2010-11-15 2012-06-28 Citizen Holdings Co Ltd 半導体発光装置及びその製造方法
JP2013021124A (ja) 2011-07-11 2013-01-31 Dowa Electronics Materials Co Ltd Ｉｉｉ族窒化物エピタキシャル基板およびその製造方法
WO2013190962A1 (ja) 2012-06-18 2013-12-27 シャープ株式会社 半導体発光装置
JP2014003296A (ja) 2012-06-15 2014-01-09 Samsung Electronics Co Ltd 超格子構造体、これを含んだ半導体素子、及び半導体素子の製造方法
US20140319454A1 (en) 2013-03-26 2014-10-30 Intellectual Discovery Co., Ltd. Nitride semiconductor light emitting device
JP2015503406A (ja) 2012-01-03 2015-02-02 ウィリアム エー． モファット， 集束ｕｖｂ放射およびビタミンｄ合成のための光線治療装置、ならびに関連システムおよび方法
US20150083994A1 (en) 2013-09-23 2015-03-26 Sensor Electronic Technology, Inc. Group III Nitride Heterostructure for Optoelectronic Device
JP2015156483A (ja) 2014-01-16 2015-08-27 株式会社トクヤマ 紫外発光ダイオード
US20150333218A1 (en) 2012-03-29 2015-11-19 Seoul Viosys Co., Ltd. Uv light emitting device

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5255759B2 (ja) * 2005-11-14 2013-08-07 パロ・アルト・リサーチ・センター・インコーポレーテッド 半導体デバイス用超格子歪緩衝層
US20080137701A1 (en) * 2006-12-12 2008-06-12 Joseph Michael Freund Gallium Nitride Based Semiconductor Device with Reduced Stress Electron Blocking Layer
JP4592742B2 (ja) 2007-12-27 2010-12-08 Ｄｏｗａエレクトロニクス株式会社 半導体材料、半導体材料の製造方法及び半導体素子
KR101018088B1 (ko) * 2008-11-07 2011-02-25 삼성엘이디 주식회사 질화물 반도체 소자
KR101636182B1 (ko) * 2010-02-24 2016-07-04 고쿠리쓰 겐큐 가이하쓰 호징 리가가쿠 겐큐소 질화물 반도체 다중 양자 장벽을 갖는 발광 소자 및 그 제조 방법
JP5143171B2 (ja) * 2010-03-17 2013-02-13 株式会社東芝 半導体発光素子及びその製造方法
WO2012012010A2 (en) * 2010-04-30 2012-01-26 Trustees Of Boston University High efficiency ultraviolet light emitting diode with band structure potential fluctuations
TWI566429B (zh) * 2010-07-09 2017-01-11 Ｌｇ伊諾特股份有限公司 發光裝置
KR101843420B1 (ko) * 2011-08-12 2018-05-14 엘지이노텍 주식회사 발광소자, 발광 소자 제조방법 및 발광 소자 패키지
KR102246648B1 (ko) 2014-07-29 2021-04-30 서울바이오시스 주식회사 자외선 발광 다이오드
US9224913B2 (en) 2012-03-29 2015-12-29 Seoul Viosys Co., Ltd. Near UV light emitting device
CN102623599B (zh) * 2012-04-25 2014-05-07 华灿光电股份有限公司 渐变电子阻挡层的紫外光氮化镓半导体发光二极管
KR101915213B1 (ko) * 2012-05-17 2018-11-06 엘지이노텍 주식회사 발광소자
KR20140022136A (ko) * 2012-08-13 2014-02-24 삼성전자주식회사 반도체 발광소자
CN102931306B (zh) * 2012-11-06 2016-02-17 华灿光电股份有限公司 一种发光二极管外延片
KR20150015760A (ko) 2013-08-01 2015-02-11 서울바이오시스 주식회사 발광 소자 제조용 템플릿 및 자외선 발광소자 제조 방법
WO2015034865A1 (en) * 2013-09-03 2015-03-12 Sensor Electronic Technology, Inc. Optoelectronic device with modulation doping
KR102261948B1 (ko) 2014-06-30 2021-06-08 엘지이노텍 주식회사 발광소자 및 이를 구비하는 조명 시스템
JP2016039362A (ja) * 2014-08-07 2016-03-22 株式会社トクヤマ 紫外線光源
KR102227772B1 (ko) * 2014-08-19 2021-03-16 삼성전자주식회사 반도체 발광소자
CN107134514B (zh) * 2017-05-10 2019-09-10 华灿光电股份有限公司 一种发光二极管的外延片及其制造方法

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001274096A (ja) 2000-03-24 2001-10-05 Sanyo Electric Co Ltd 窒化物系半導体素子およびその製造方法
JP2005527988A (ja) 2002-12-04 2005-09-15 エムコア・コーポレイション 窒化ガリウムベース素子及び製造方法
JP2009130097A (ja) 2007-11-22 2009-06-11 Sharp Corp Ｉｉｉ族窒化物半導体発光素子及びその製造方法
JP2012124443A (ja) 2010-11-15 2012-06-28 Citizen Holdings Co Ltd 半導体発光装置及びその製造方法
JP2013021124A (ja) 2011-07-11 2013-01-31 Dowa Electronics Materials Co Ltd Ｉｉｉ族窒化物エピタキシャル基板およびその製造方法
JP2015503406A (ja) 2012-01-03 2015-02-02 ウィリアム エー． モファット， 集束ｕｖｂ放射およびビタミンｄ合成のための光線治療装置、ならびに関連システムおよび方法
US20150333218A1 (en) 2012-03-29 2015-11-19 Seoul Viosys Co., Ltd. Uv light emitting device
JP2014003296A (ja) 2012-06-15 2014-01-09 Samsung Electronics Co Ltd 超格子構造体、これを含んだ半導体素子、及び半導体素子の製造方法
WO2013190962A1 (ja) 2012-06-18 2013-12-27 シャープ株式会社 半導体発光装置
US20140319454A1 (en) 2013-03-26 2014-10-30 Intellectual Discovery Co., Ltd. Nitride semiconductor light emitting device
US20150083994A1 (en) 2013-09-23 2015-03-26 Sensor Electronic Technology, Inc. Group III Nitride Heterostructure for Optoelectronic Device
JP2015156483A (ja) 2014-01-16 2015-08-27 株式会社トクヤマ 紫外発光ダイオード

Also Published As

Publication number Publication date
CN115881868A (zh) 2023-03-31
CN109075160B (zh) 2022-12-30
US10644194B2 (en) 2020-05-05
JP2019514224A (ja) 2019-05-30
EP3444841A1 (en) 2019-02-20
JP2022043283A (ja) 2022-03-15
US20190140137A1 (en) 2019-05-09
EP3444841B1 (en) 2020-04-08
CN109075160A (zh) 2018-12-21
JP7270300B2 (ja) 2023-05-10
WO2017179944A1 (ko) 2017-10-19
EP3444841A4 (en) 2019-04-03

Similar Documents

Publication Publication Date Title
JP7270300B2 (ja) 発光素子
TWI458120B (zh) 發光二極體、發光二極體燈及照明裝置
KR102019914B1 (ko) 발광 소자
KR102237154B1 (ko) 발광 소자 및 이를 구비한 라이트 유닛
CN105098041A (zh) 发光器件和包括发光器件的发光器件封装
JP6901490B2 (ja) 発光素子パッケージ及びこれを含む照明装置
EP2365528A2 (en) Two light emitting diodes stacked in an n-p-n arrangement and LED package comprising the same
EP2752896B1 (en) Light emitting device package
JP2010219310A (ja) 光デバイスおよび光デバイス構造
CN109791966B (zh) 发光器件封装
US8928016B2 (en) Light emitting device, light emitting device package, and light system
KR20120111364A (ko) 발광 소자 및 발광 소자 패키지
JP7209331B2 (ja) 半導体素子
US20110095306A1 (en) Light emitting device, light emitting device package and lighting system
US9184345B2 (en) Light emitting diode and light emitting diode lamp
KR20140098521A (ko) 발광소자
KR20170120878A (ko) 발광모듈 및 의료기기
KR20170011839A (ko) 자외선 발광소자 및 발광소자 패키지
KR102066610B1 (ko) 발광 소자
KR20140098518A (ko) 발광소자
KR101710889B1 (ko) 발광 소자
KR102486036B1 (ko) 자외선 발광소자, 자외선 발광소자 제조방법 및 발광소자 패키지
KR102200075B1 (ko) 자외선 발광소자 및 조명시스템
KR102251238B1 (ko) 자외선 발광소자 및 조명시스템
KR102237152B1 (ko) 발광소자 및 라이팅 유닛

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20181016

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200401

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20200401

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20210226

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20210302

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210601

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20210618

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20210914

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20211119

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20211130

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20211228

R150 Certificate of patent or registration of utility model

Ref document number: 7003058

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250