WO2017138779A1 - 발광 소자 패키지 및 이를 포함하는 조명 장치 - Google Patents
발광 소자 패키지 및 이를 포함하는 조명 장치 Download PDFInfo
- Publication number
- WO2017138779A1 WO2017138779A1 PCT/KR2017/001498 KR2017001498W WO2017138779A1 WO 2017138779 A1 WO2017138779 A1 WO 2017138779A1 KR 2017001498 W KR2017001498 W KR 2017001498W WO 2017138779 A1 WO2017138779 A1 WO 2017138779A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light emitting
- emitting device
- layer
- lead frame
- disposed
- Prior art date
Links
- 229920006336 epoxy molding compound Polymers 0.000 claims abstract description 67
- 238000000465 moulding Methods 0.000 claims abstract description 51
- 239000006229 carbon black Substances 0.000 claims abstract description 4
- 239000004065 semiconductor Substances 0.000 claims description 141
- 239000000758 substrate Substances 0.000 claims description 63
- 239000000463 material Substances 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 25
- 230000004308 accommodation Effects 0.000 claims description 13
- 238000005192 partition Methods 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 260
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 21
- 239000010949 copper Substances 0.000 description 18
- 230000008569 process Effects 0.000 description 18
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 16
- 239000010931 gold Substances 0.000 description 16
- 239000002019 doping agent Substances 0.000 description 13
- 150000001875 compounds Chemical class 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 229910000679 solder Inorganic materials 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 239000012790 adhesive layer Substances 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000000919 ceramic Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- 229910052709 silver Inorganic materials 0.000 description 9
- 229910002704 AlGaN Inorganic materials 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 8
- 238000000605 extraction Methods 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 8
- 238000007747 plating Methods 0.000 description 8
- 239000011787 zinc oxide Substances 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 238000001746 injection moulding Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 239000010948 rhodium Substances 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 229910052712 strontium Inorganic materials 0.000 description 3
- 229910052714 tellurium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910019897 RuOx Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 210000000988 bone and bone Anatomy 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000010944 silver (metal) Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910018229 Al—Ga Inorganic materials 0.000 description 1
- 208000019901 Anxiety disease Diseases 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- DZLPZFLXRVRDAE-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] Chemical compound [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] DZLPZFLXRVRDAE-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000036506 anxiety Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/90—Methods of manufacture
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
- F21S2/005—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction of modular construction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
Definitions
- Embodiments relate to a light emitting device package and a lighting device including the same.
- a light emitting diode is a kind of semiconductor device that transmits and receives a signal by converting electricity into infrared light or light using characteristics of a compound semiconductor.
- Group III-V nitride semiconductors are spotlighted as core materials of light emitting devices such as light emitting diodes (LEDs) or laser diodes (LDs) due to their physical and chemical properties.
- LEDs light emitting diodes
- LDs laser diodes
- These light emitting diodes do not contain environmentally harmful substances such as mercury (Hg) used in existing lighting equipment such as incandescent lamps and fluorescent lamps, so they have excellent eco-friendliness and have advantages such as long life and low power consumption. It is replacing them.
- Hg mercury
- a substrate of a conventional light emitting device package including a light emitting diode is implemented by ceramics, there is a problem of causing cracks and high manufacturing cost.
- the outside of the conventional light emitting device package including a light emitting diode has a problem that the crack is generated due to the weak rigidity.
- One embodiment provides a light emitting device package having improved characteristics and a lighting device including the same.
- Another embodiment provides a light emitting device package and a lighting device including the same that can maintain the light extraction efficiency while having excellent rigidity.
- a light emitting device package includes: a body including a black epoxy molding compound (EMC) including carbon black; First and second lead frames electrically separated from each other by the body; A light emitting element disposed on at least one of the first and second lead frames; And a molding member disposed on the body and the first and second lead frames to surround the light emitting device.
- EMC black epoxy molding compound
- the top surface of the body and the top surface of each of the first and second lead frames may be located on the same horizontal surface.
- the top surface of the body and the top surface of each of the first and second lead frames may have a flat shape.
- the thermal resistance from the light emitting device to the lower ends of the first and second lead frames may be 5 ° C./W.
- the light emitting device may include a light emitting structure.
- the light emitting structure may include a first conductivity type semiconductor layer; An active layer disposed on the first conductivity type semiconductor layer; And a second conductivity type semiconductor layer disposed on the active layer.
- the light emitting device package may further include a first wire electrically connecting the second conductive semiconductor layer to the second lead frame, and the first conductive semiconductor layer may be electrically connected to the first lead frame.
- the light emitting device package may include a first wire electrically connecting the first conductivity type semiconductor layer to the first lead frame; And a second wire electrically connecting the second conductivity type semiconductor layer to the second lead frame.
- the light emitting structure may include a first conductivity type semiconductor layer; An active layer disposed under the first conductivity type semiconductor layer; And a second conductive semiconductor layer disposed under the active layer, wherein the light emitting device comprises: a substrate disposed on the light emitting structure; A first electrode disposed under the first conductive semiconductor layer; And a second electrode disposed under the second conductive semiconductor layer.
- the light emitting device package may include a first solder part disposed between the first electrode and the first lead frame; And a second solder part disposed between the second electrode and the second lead frame.
- the molding member may include a first molding member surrounding a side of the light emitting device and disposed on the first and second lead frames; And a second molding member surrounding an upper portion of the light emitting device and disposed on the first molding member.
- the thickness of the first molding member may be the same as the thickness of the light emitting device.
- the thickness of the body and the thickness of the first and second lead frames may be the same.
- the first lead frame may include a first-first layer; And a 1-2 layer disposed on the first-first layer and wider than the first-first layer, wherein the second lead frame comprises: a second-1 layer; And a 2-2 layer disposed on the 2-1 layer and wider than the 2-1 layer.
- the body may include a first-first accommodation space in which the first-first layer is accommodated; A 2-1 accommodating space accommodating the 2-1 th layer; A partition wall disposed to separate the first-first accommodation space and the second-first accommodation space from each other; A 1-2-2 accommodating space in which the 1-2 layer is accommodated and above the 1-1 receiving space; And the second-second layer is accommodated, and may include a second-second accommodation space on the second-first accommodation space.
- the first-second layer includes at least one first protrusion protruding outward of the first-second accommodation space, and the second-second layer extends outward of the second-two accommodation space.
- At least one second protrusion may protrude, and the body may include a plurality of blind holes for receiving the first and second protrusions.
- first-first layer and the first-second layer may be integrated, and the second-first layer and the second-2-2 layer may be integrated.
- the light emitting device package may further include a dam that confines the molding member together with the first and second lead frames.
- the light emitting device package may include a zener diode disposed on the other of the first and second lead frames; And a third wire electrically connecting the zener diode and the second lead frame to each other.
- first and second lead frames may be coupled to the body by injection molding.
- a light emitting device package in another embodiment, includes: first and second lead frames; An inner body electrically separating the first and second lead frames from each other and defining a cavity with the first and second lead frames; A light source disposed in at least one of the first and second lead frames in the cavity; And an outer body surrounding an outer side surface of the inner body and having a material different from that of the inner body.
- each of the inner body and the outer body may comprise an EMC.
- the inner body may include a white EMC
- the outer body may include a black EMC
- the inner body may include a lower portion electrically separating the first and second lead frames from each other; And a side portion extending from the lower portion to form a side surface of the cavity.
- the inner body may further include a reflective protrusion penetrating the upper surface of the outer body.
- the reflective protrusion may divide the upper surface of the outer body into two or four portions.
- the reflective protrusion may have a symmetrical planar shape.
- a lower portion of the inner body may include a plurality of through holes
- the first lead frame may include a first lower lead frame inserted into a portion of the plurality of through holes; And a first upper lead frame disposed on the first lower lead frame and forming a portion of a bottom surface of the cavity, wherein the second lead frame is inserted into another portion of the plurality of through holes and is disposed on the second lower side; Lead frame; And a second upper lead frame disposed on the second lower lead frame and forming another part of the bottom surface of the cavity.
- first lower lead frame and the first upper lead frame may be integrated, and the second lower lead frame and the second upper lead frame may be integrated.
- first upper lead frame, the second upper lead frame, and the lower portion of the inner body may form the same horizontal surface corresponding to the bottom surface of the cavity.
- the side of the inner body includes at least one inner fastening hole
- the outer body includes at least one outer fastening hole in communication with the inner fastening hole
- each of the first and second lead frames Embedded in the inner fastening hole and the outer fastening hole may include a fastening protrusion for fastening the inner body and the outer body.
- the at least one inner fastening hole may include a plurality of inner fastening holes spaced apart from each other at regular intervals
- the at least one outer fastening hole may include a plurality of outer fastening holes spaced apart from each other at regular intervals. have.
- the light emitting device package may further include a molding member embedded in the cavity and surrounding the light source.
- the light emitting device package may further include an upper structure disposed to cover the cavity.
- the inner body and the outer body may have a symmetrical planar shape.
- the lighting apparatus may include the light emitting device package.
- An embodiment of a light emitting device package and a lighting device including the same may be manufactured at a lower cost than a conventional light emitting device package having a substrate of ceramic or AlN, and has excellent rigidity, injection property, and fairness, and is manufactured more per unit time. It can be manufactured in a large number, has a high degree of freedom of design, has excellent heat dissipation characteristics, prevents cracks and dust generation, and another embodiment is realized by white EMC having an inner body having better reflectivity than black EMC And, since the outer body is implemented with a black EMC having a stronger strength than the white EMC, it can have a strong rigidity while having excellent light extraction efficiency.
- FIG. 1 is an overall exploded perspective view of a light emitting device package according to an embodiment.
- FIG. 2 is a partially coupled perspective view of the light emitting device package shown in FIG. 1.
- FIGS. 1 and 2 are cross-sectional views of the middle of the light emitting device package illustrated in FIGS. 1 and 2.
- FIGS. 1 to 3 is an exploded perspective view of the first and second lead frames and the body shown in FIGS. 1 to 3;
- FIG. 5 shows a partially engaged perspective view of the first and second lead frames and the body.
- FIG. 6 is a perspective view of the entire combination of the body of FIG. 1 and the second lead frame.
- FIG. 7A to 7C are cross-sectional views of various embodiments of light emitting devices included in the light emitting device package according to the embodiment.
- FIG. 8 is a sectional view showing a light emitting device package according to another embodiment
- 9A to 9D are cross-sectional views illustrating a method of manufacturing a light emitting device package according to an embodiment.
- FIG. 10 is a perspective view illustrating an upper coupling of a light emitting device package according to another embodiment.
- FIG. 11 is a top exploded perspective view of the light emitting device package illustrated in FIG. 10.
- FIG. 12 is a bottom exploded perspective view of the light emitting device package illustrated in FIG. 10.
- FIG. 13 is a plan view of the light emitting device package illustrated in FIG. 10.
- FIG. 14 is a bottom view of the light emitting device package shown in FIG. 10.
- FIG. 15 is a perspective view illustrating the upper portion of the light emitting device package illustrated in FIG. 10.
- FIG. 16 and 17 illustrate cross-sectional views of the light emitting device package illustrated in FIG. 10.
- FIG. 18 is a perspective view illustrating an upper coupling of a light emitting device package according to another embodiment.
- FIG. 19 is a perspective view illustrating the upper portion of the light emitting device package illustrated in FIG. 18.
- 20A to 20C illustrate cross-sectional views of various embodiments of light sources included in light emitting device packages according to embodiments.
- relational terms such as “first” and “second,” “upper / upper / up” and “lower / lower / lower”, etc., as used below, may be used to describe any physical or logical relationship between such entities or elements or It may be used to distinguish one entity or element from another entity or element without necessarily requiring or implying an order.
- the light emitting device packages 1000A, 1000B, 1000C, and 1000D according to the embodiment will be described using the Cartesian coordinate system, but the embodiment is not limited thereto. That is, according to the Cartesian coordinate system, the x-axis, the y-axis, and the z-axis are orthogonal to each other, but the embodiment is not limited thereto. That is, the x-axis, y-axis, and z-axis may cross each other instead of being orthogonal.
- light emitting device packages 1000A and 1000B according to one or more embodiments will be described with reference to the accompanying drawings.
- FIG. 1 is an exploded perspective view of a light emitting device package 1000A according to an exemplary embodiment
- FIG. 2 is a partially combined perspective view of the light emitting device package 1000A shown in FIG. 1
- FIG. 3 is FIGS. 1 and 2.
- a light emitting device package 1000A may include a body 110, first and second lead frames 122 and 124, a light emitting device 130, and a molding member 140. , A zener diode 150, an adhesive layer 152, and first and third wires 162 and 164.
- the body 110 may include a black epoxy molding compound (EMC) including carbon black.
- EMC black epoxy molding compound
- the body 110 is a portion corresponding to the base of the light emitting device package 1000A.
- the first lead frame 122 and the second lead frame 124 may be electrically spaced apart from each other by the body 110.
- the first and second lead frames 122 and 124 provide power to the light emitting device 130.
- the first and second lead frames 122 and 124 may serve to increase light efficiency by reflecting light generated from the light emitting device 130, and may transmit heat generated from the light emitting device 130 to the outside. It can also play a role.
- Each of the first and second lead frames 122 and 124 may be made of a material having electrical conductivity, such as copper (Cu), but embodiments may be specific to the first and second lead frames 122 and 124. It is not limited to materials.
- the first lead frame 122 may include a first-first layer 122L and a first-second layer 122H.
- the first-first layer 122L corresponds to the lower layer of the first lead frame 122
- the first-second layer 122H corresponds to the upper layer of the first lead frame 122.
- the first-second layer 122H may be disposed on the first-first layer 122L and may have a larger area than the first-first layer 122L. 1 and 2, although the first-first layer 122L and the first-second layer 122H are illustrated as separate layers, the embodiment is not limited thereto. According to another embodiment, as shown in FIG. 3, the first-first layer 122L and the first-second layer 122H may be integrated.
- the second lead frame 124 may include a second-first layer 124L and a second-second layer 124H.
- the second-first layer 124L corresponds to the lower layer of the second lead frame 124
- the second-second layer 124H corresponds to the upper layer of the second lead frame 124.
- the second-second layer 124H is disposed on the second-first layer 124L and may have a larger area than the second-first layer 124L. 1 and 2, the second-first layer 124L and the second-second layer 124H are shown as separate layers, but the embodiment is not limited thereto. According to another embodiment, as shown in FIG. 3, the second-first layer 124L and the second-second layer 124H may be integrated.
- first lead frame 122 is divided into 1-1 and 1-2 layers 122L and 122H having different widths
- the second lead frame 124 has different widths.
- the first and second lead frames 122 and 124 may be stably supported and fixed to the body 110, and the first and second lead frames 122 and 124 may be fixed.
- the contact area between the second lead frame (122, 124) and the body 110 is widened can be more excellent heat dissipation.
- FIG. 4 is an exploded perspective view of the first and second lead frames 122 and 124 and the body 110 illustrated in FIGS. 1 to 3, and FIG. 5 is a view of the first and second lead frames 122 and 124. A partially engaged perspective view of the body 110 is shown, and FIG. 6 is an overall coupled perspective view of the first and second lead frames 122 and 124 and the body 110.
- the body 110 includes first-first and second-first accommodating spaces H11 and H21, first-second and second-second accommodating spaces H12 and H22, and a partition wall ( B).
- the first-first accommodating space H11 forms a space in which the first-first layer 122L of the first lead frame 122 is accommodated, and the second-first accommodating space H21 is formed in the first-first accommodating space H11.
- a space in which the second-first layer 124L of the second lead frame 124 is accommodated is formed.
- the first-first accommodating space H11 and the second-first accommodating space H21 may be spaced apart from each other by the partition B of the body 110. Accordingly, as shown in FIG. 5, the first-first layer 122L of the first lead frame 122 accommodated in the first-first accommodating space H11 and the second accommodated in the second-first accommodating space H21 are provided.
- the second-first layer 124L of the lead frame 124 may be electrically spaced apart from each other by the partition wall B of the body 110.
- the first-second accommodating space H12 forms a space in which the first-second layer 122H of the first lead frame 122 is accommodated, and is disposed on the first-first accommodating space H11.
- the second-second accommodating space H22 forms a space in which the second-second layer 124H of the second lead frame 124 is accommodated and is positioned on the second-first accommodating space H21.
- the first-second accommodating space H12 and the second-second accommodating space H22 may be spaced apart from each other by the partition wall B of the body 110. Therefore, as shown in FIG. 6, the first-second layer 122H and the second-second accommodation space H22 of the first lead frame 122 accommodated in the first-second accommodation space H12 are accommodated.
- the second-second layer 124H of the two lead frames 124 may be electrically spaced apart from each other by the partition B.
- first-second layer 122H of the first lead frame 122 includes at least one first protrusion P1 protruding outward of the first-second accommodation space H12.
- the second-second layer 124H of the second lead frame 124 may include at least one second protrusion P2 protruding outward of the second-second accommodation space H22.
- the body 110 may further include a plurality of blind holes H31 and H32.
- the first blind hole H31 receives the first protrusion P1
- the second blind hole H32 has a shape capable of receiving the second protrusion P2.
- the coupling between the first blind hole H31 and the first protrusion P1 and between the second blind hole H32 and the second protrusion P2 allows the first and second lead frames 122 and 124 to have a body ( It may be stably supported and fixed to the 110, and the contact area between the first and second lead frames 122 and 124 and the body 110 may be widened to provide better heat dissipation.
- the top surface 110T of the body 110 may have a flat shape.
- top surface 122HT of the first lead frame 122 and the top surface 124HT of the second lead frame 124 may also have a flat shape.
- the top surface 110T of the body 110 and the top surfaces 122HT and 124HT of the first and second lead frames 122 and 124 may be positioned on the same horizontal surface.
- the body 110 may have a first thickness T1
- each of the first lead frame 122 and the second lead frame 124 may have a second thickness T2.
- the second thickness T2 of the first lead frame 122 corresponds to the thickness of the sum of the thicknesses of the first-first layer 122L and the first-second layer 122H
- the second lead corresponds to the sum of the thicknesses of the second-first layer 124L and the second-second layer 124H.
- the second thickness T2 of the first lead frame 122 and the second thickness T2 of the second lead frame 124 may be the same.
- the second thickness T2 of the first lead frame 122 and the second thickness T2 of the second lead frame 124 may be different from each other.
- first thickness T1 of the body 110 and the second thickness T2 of each of the first and second lead frames 122 and 124 may be the same as or different from each other.
- first and second lead frames 122 and 124 may be coupled to the body 110 by injection molding.
- both surfaces of the first and second lead frames 122 and 124 may be plated. That is, the lower surface of the first-first layer 122L of the first lead frame 122, the upper surface 122HT of the first-second layer 122H, and the second-first layer of the second lead frame 124. Each of the bottom surface 124L and the top surface 124HT of the second-second layer 124H may be plated with silver (Ag) or gold (Au).
- the light emitting device 130 may be disposed on at least one of the first and second lead frames 122 and 124.
- the light emitting device 130 may have a vertical bonding structure, but embodiments are not limited thereto. That is, according to another embodiment, the light emitting device 130 may have a horizontal bonding structure or a flip chip bonding structure.
- 7A to 7C are cross-sectional views of various embodiments 130A, 130B, and 130C of the light emitting device 130 included in the light emitting device package 1000A according to the embodiment.
- the light emitting device 130 illustrated in FIGS. 1 to 3 may have a vertical bonding structure as illustrated in FIG. 7A. However, according to another embodiment, the light emitting device 130 may have a horizontal bonding structure as shown in FIG. 7B or a flip chip bonding structure as shown in FIG. 7C.
- the light emitting devices 130 (130A to 130C) illustrated in FIGS. 7A to 7C may include light emitting structures 134A, 134B, and 134C.
- the light emitting structures 134A, 134B, and 134C may include the first conductive semiconductor layers 134A-1, 134B-1, and 134C-1, and the active layers 134A-2, 134B-2, and 134C-. 2) and the second conductivity type semiconductor layers 134A-3, 134B-3, and 134C-3.
- the light emitting structures 134A, 134B, and 134C may have different constituent materials, which will be described below.
- the light emitting device 130A having the vertical bonding structure illustrated in FIG. 7A may include a support substrate 132, a light emitting structure 134A, and an ohmic contact layer 136.
- the support substrate 132 supports the light emitting structure 134A and may include a conductive material. This is to allow the first conductive semiconductor layer 134A-1 disposed on the support substrate 132 to be electrically connected to the first lead frame 122 through the support substrate 132.
- the support substrate 132 may include, but is not limited to, at least one of sapphire (Al 2 O 3 ), GaN, SiC, ZnO, GaP, InP, Ga 2 O 3 , GaAs, and Si. If the support substrate 132 is a conductive type, since the entire support substrate 132 may serve as a first electrode, a metal having excellent electrical conductivity may be used, and heat generated when the light emitting device 130A is operated. Since it must be able to sufficiently dissipate, it is possible to use a metal with high thermal conductivity.
- the support substrate 132 may be made of a material selected from the group consisting of molybdenum (Mo), silicon (Si), tungsten (W), copper (Cu) and aluminum (Al) or alloys thereof.
- Mo molybdenum
- Si silicon
- tungsten W
- Cu copper
- Al aluminum
- Au gold
- Au copper alloy
- Ni nickel
- Cu-W copper-tungsten
- carrier wafers e.g. GaN, Si, Ge, GaAs, ZnO, SiGe, SiC, SiGe, Ga) 2 O 3, etc.
- the light extraction efficiency may be increased by reflecting the light emitted from the light emitting structure 134A and directed toward the support substrate 134A without being directed to the top or the side.
- a reflective layer (not shown) may be further disposed between the support substrate 132 and the light emitting structure 134A.
- the reflective layer serves to reflect the light emitted from the active layer 134A-2 to the top, and is disposed on the support substrate 132 and may have a thickness of about 2500 angstroms.
- the reflective layer may be made of a metal layer including aluminum (Al), silver (Ag), nickel (Ni), platinum (Pt), rhodium (Rh), or an alloy containing Al or Ag or Pt or Rh. have.
- Aluminum, silver, or the like may effectively reflect light generated from the active layer 134A-2 to greatly improve light extraction efficiency of the light emitting device 130A.
- the reflective layer may have various light reflection patterns.
- the light reflection pattern may have a hemispherical relief shape, but may have an intaglio shape or various other shapes.
- the first conductivity type semiconductor layer 134A-1 is disposed on the support substrate 132.
- the first conductivity-type semiconductor layer 134A-1 may be implemented as a group III-V compound semiconductor doped with a first conductivity type dopant.
- the n-type dopant may be Si, Ge, Sn, Se, Te may include, but are not limited thereto.
- the first conductive semiconductor layer 134A-1 may have a composition formula of Al x In y Ga (1-xy) N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x + y ⁇ 1). It may include a semiconductor material having a.
- the first conductive semiconductor layer 134A-1 may be formed of any one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, InP. .
- the active layer 134A-2 is disposed on the first conductivity type semiconductor layer 134A-1.
- electrons injected through the first conductivity-type semiconductor layer 134A-1 and holes injected through the second conductivity-type semiconductor layer 134A-3 meet each other, thereby forming an active layer 134A-2.
- It is a layer that emits light with energy determined by the energy bands inherent in the material.
- the active layer 134A-2 includes a single well structure, a multi well structure, a single quantum well structure, a multi quantum well structure (MQW), a quantum-wire structure, or a quantum dot structure. It may be formed of at least one.
- the well layer / barrier layer of the active layer 134A-2 has a pair structure of at least one of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP (InGaP) / AlGaP. It may be, but is not limited to such.
- the well layer may be formed of a material having a band gap smaller than the band gap of the barrier layer.
- a conductive clad layer may be formed on or under the active layer 134A-2.
- the conductive clad layer may be formed of a semiconductor having a band gap wider than the band gap of the barrier layer of the active layer 134A-2.
- the conductive clad layer may include GaN, AlGaN, InAlGaN, or a superlattice structure.
- the conductive clad layer may be doped with n-type or p-type.
- the second conductivity type semiconductor layer 134A-3 is disposed on the active layer 134A-2.
- the second conductivity type semiconductor layer 134A-3 may be formed of a semiconductor compound.
- the second conductivity-type semiconductor layer 134A-3 may be implemented with compound semiconductors such as Groups 3-5 and 2-6, for example, In x Al y Ga 1-xy N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, and 0 ⁇ x + y ⁇ 1). If the second conductivity type is p-type, the second conductivity-type semiconductor layer 134A-3 may include Mg, Zn, Ca, Sr, and Ba as a p-type dopant.
- the ohmic contact layer 136 is disposed on the second conductivity type semiconductor layer 134A-3.
- the impurity doping concentration is low, and thus the contact resistance is high. Therefore, the ohmic characteristic may not be good, so that the light emitting device 130A may be ohmic.
- the contact layer 136 may be further included.
- the ohmic contact layer 136 disposed on the second conductive semiconductor layer 134A-3 may include at least one of a metal and a transparent conductive oxide (TCO).
- the ohmic contact layer 136 may have a thickness of about 200 angstroms, and may be indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), or indium aluminum zinc oxide (IGZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IZON (IZO Nitride), AGZO ( Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO, Ag, Ni, Cr, Ti, Al , Rh, Pd, Ir, Sn, In, Ru, Mg, Zn, Pt, Au, Hf may be formed including at least one, and is not limited to
- the light emitting device 130A is illustrated as being disposed on the first lead frame 122, but the embodiment is not limited thereto. That is, according to another embodiment, the light emitting device 130A may be disposed on the second lead frame 124.
- the first conductive semiconductor layer 134A-1 is electrically connected to the first lead frame 122 through the support substrate 132, no wire is required. That is, the support substrate 132 may serve as a first electrode.
- the second conductivity type semiconductor layer 134A-3 may be electrically connected to the second lead frame 124 by the first wire 162.
- first wire 162 shown in FIGS. 1 to 3 and 7A is shown as being directly connected to the second conductivity type semiconductor layer 134A-3, the embodiment is not limited thereto. That is, according to another embodiment, the first wire 162 may be electrically connected to the second conductivity type semiconductor layer 134A-3 through the ohmic contact layer 136. In this case, the ohmic contact layer 136 may serve as a second electrode.
- the light emitting device 130B having the horizontal bonding structure shown in FIG. 7B may include a substrate 131, a light emitting structure 134B, and first and second electrodes 135 and 137.
- the substrate 131 may include a conductive material or a non-conductive material.
- the substrate 131 may include at least one of sapphire (Al 2 O 3 ), GaN, SiC, ZnO, GaP, InP, Ga 2 O 3 , GaAs, and Si.
- the substrate 131 when the substrate 131 is a silicon substrate, it may have a (111) crystal plane as the main surface.
- a silicon substrate In the case of a silicon substrate, a large diameter is easy and thermal conductivity is high, but cracks are generated in the light emitting structure 134B due to a difference in thermal expansion coefficient between the silicon and the nitride-based light emitting structure 134B and lattice mismatch. Problems may also arise.
- a buffer layer (or transition layer) (not shown) may be disposed between the substrate 131 and the light emitting structure 134B.
- the buffer layer may include, but is not limited to, at least one material selected from the group consisting of Al, In, N, and Ga, for example.
- the buffer layer may have a single layer or a multilayer structure.
- the first conductivity type semiconductor layer 134B-1 is disposed on the substrate 131.
- the first conductive semiconductor layer 134B-1 may be formed of a compound semiconductor such as a III-V group or a II-VI group doped with the first conductive dopant, and may be doped with the first conductive dopant.
- the first conductivity-type semiconductor layer 134B-1 is an n-type semiconductor layer
- the first conductivity-type dopant may be an n-type dopant and may include Si, Ge, Sn, Se, Te, but is not limited thereto.
- the first conductivity type semiconductor layer 134B-1 may have a composition formula of Al x In y Ga (1-xy) N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x + y ⁇ 1). It may include a semiconductor material having a.
- the first conductive semiconductor layer 134B-1 may include at least one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, InP. .
- the active layer 134B-2 is disposed on the first conductivity type semiconductor layer 134B-1.
- the active layer 134B-2 is electrons (or holes) injected through the first conductivity type semiconductor layer 134B-1 and holes (or electrons) are injected through the second conductivity type semiconductor layer 134B-3. This is a layer that meets each other and emits light having energy determined by the energy band inherent in the material forming the active layer 134B-2.
- the active layer 134B-2 includes a single well structure, a multi well structure, a single quantum well structure, a multi quantum well structure (MQW), a quantum-wire structure, or a quantum dot structure. It may be formed of at least one.
- the well layer / barrier layer of the active layer 134B-2 has a pair structure of at least one of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP (InGaP) / AlGaP. It may be, but is not limited to such.
- the well layer may be formed of a material having a band gap energy lower than the band gap energy of the barrier layer.
- a conductive clad layer (not shown) may be formed on or under the active layer 134B-2.
- the conductive cladding layer may be formed of a semiconductor having a bandgap energy higher than the bandgap energy of the barrier layer of the active layer 134B-2.
- the conductive clad layer may include GaN, AlGaN, InAlGaN, or a superlattice structure.
- the conductive clad layer may be doped with n-type or p-type.
- the second conductivity type semiconductor layer 134B-3 is disposed on the active layer 134B-2.
- the second conductivity-type semiconductor layer 134B-3 may be formed of a semiconductor compound, and may be implemented as a compound semiconductor such as group III-V or group II-VI.
- the second conductivity type semiconductor layer 134B-3 is a semiconductor material having a composition formula of In x Al y Ga 1-xy N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x + y ⁇ 1). It may include.
- the second conductive semiconductor layer 134B-3 may be doped with a second conductive dopant.
- the second conductivity-type dopant may include Mg, Zn, Ca, Sr, Ba, or the like as a p-type dopant.
- the first electrode 135 is a first conductive semiconductor exposed by mesa etching a portion of the second conductive semiconductor layer 134B-3, the active layer 134B-2, and the first conductive semiconductor layer 134B-1. Disposed over layer 134B-1.
- the second electrode 137 is disposed on the second conductive semiconductor layer 134B-3.
- the first and second electrodes in a single layer or a multilayer structure including at least one of aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu), and gold (Au). (135, 137) can be formed.
- the first conductivity type semiconductor layer 134B-1 is electrically connected to the first lead frame 122. Can be connected.
- the second conductive semiconductor layer 134B-3 is electrically connected to the second lead frame 124. Can be connected.
- the light emitting device 130C having the flip chip type bonding structure illustrated in FIG. 7C may include a substrate 131, a light emitting structure 134C, a first electrode 135, and a second electrode 137.
- the light emitting structure 134C may be disposed under the substrate 131.
- the first conductivity type semiconductor layer 134C-1 is disposed under the substrate 131.
- the active layer 134C-2 is disposed under the first conductivity type semiconductor layer 134C-1.
- the second conductivity type semiconductor layer 134C-3 is disposed under the active layer 134C-2.
- the first electrode 135 is disposed under the first conductivity type semiconductor layer 134C-1.
- the second electrode 137 is disposed under the second conductive semiconductor layer 134C-3.
- the electrode 137 includes the substrate 131, the first conductive semiconductor layer 134B-1, the active layer 134B-2, the second conductive semiconductor layer 134B-3 and the first electrode illustrated in FIG. 7B. 135 and the second electrode 137 may perform the same role and may be implemented with the same material. However, in the light emitting device 130B illustrated in FIG. 7B, since light is emitted in upper and side directions, each of the second conductive semiconductor layer 134B-3 and the second electrode 137 may be formed of a light transmissive material. Can be.
- each of the first conductivity-type semiconductor layer 134C-1, the substrate 131, and the first electrode 135 may be light. It may be implemented with a permeable material.
- the light emitting device package 1000A may further include first and second solder parts 139A and 139B.
- the first solder portion 139A is disposed between the first electrode 135 and the first lead frame 122. Therefore, the first conductivity type semiconductor layer 134C-1 may be electrically connected to the first lead frame 122 through the first electrode 135 and the first solder portion 139A.
- the second solder part 139B is disposed between the second electrode 137 and the second lead frame 124. Therefore, the second conductivity type semiconductor layer 134C-2 may be electrically connected to the second lead frame 124 through the second electrode 137 and the second solder portion 139B.
- the first conductivity-type semiconductor layers 134A-1, 134B-1, and 134C-1 are p-type semiconductor layers, and a second conductivity-type semiconductor.
- the layers 134A-3, 134B-3, and 134C-3 may be implemented as n-type semiconductor layers.
- the first conductive semiconductor layers 134A-1, 134B-1, and 134C-1 are n-type semiconductor layers
- the second conductive semiconductor layers 134A-3, 134B-3, and 134C-3 are p-type semiconductors. It may be implemented as a semiconductor layer.
- the light emitting structures 134A, 134B, and 134C may be implemented as any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure.
- the molding member 140 may be disposed on the body 110 and the first and second lead frames 122 and 124 to surround the light emitting device 130.
- the molding member 140 may surround and protect the light emitting device 130.
- the molding member 140 may include a phosphor to change the wavelength of light emitted from the light emitting device 130.
- the molding member 140 may include first and second molding members 142 and 144.
- the first molding member 142 may surround the side of the light emitting device 130 and be disposed on the first and second lead frames 122 and 124.
- the first molding member 142 improves the luminous flux of the light emitted from the light emitting device 130 and prevents the light emitting device 130 from being damaged by an external environment.
- the second molding member 144 may surround the upper portion of the light emitting device 130 and be disposed on the first molding member 142.
- the second molding member 144 serves to secondaryly improve the luminous flux of the light emitted from the light emitting device 130.
- the first and third wires 162 and 164 illustrated in FIGS. 1 to 3 may be disposed only inside the first molding member 142 without being disposed up to the second molding member 144. Accordingly, each of the first wires 162 and 166, the second wires 168, and the third wires 164 may be disposed to extend to the interior of the second molding member 144 as well as the first molding member 142. have. In this case, the second molding member 144 may serve to protect each of the first wires 162 and 166, the second wire 168, and the third wire 164.
- the molding member 140 may be made of silicon.
- the first molding member 142 may be made of white silicone, and the second molding member 144 may be made of clear silicone, but the embodiment of the molding member 140 It is not limited to specific materials.
- the third thickness T3 of the first molding member 142 and the fourth thickness T4 of the light emitting device 130 may be the same as or different from each other.
- the third thickness T3 may be equal to the fourth thickness T4.
- the zener diode 150 may be disposed on another lead frame of the first or second lead frames 122 and 124 in which the light emitting device 130 is not disposed.
- the zener diode 150 may include the second lead frame 124. ) May be disposed above.
- the zener diode 150 and the first lead frame 122 may be electrically connected to each other by the third wire 164.
- Each of the first wires 162 and 166, the second wire 168, and the third wire 164 described above may be implemented with gold (Au).
- the zener diode 150 serves to prevent an overcurrent flowing through the light emitting device package 1000A or an applied voltage electrostatic discharge (ESD).
- the adhesive layer 152 may be disposed between the zener diode 150 and the second lead frame 124.
- the adhesive layer 152 serves to bond the zener diode 150 to the second lead frame 124, has a kind of paste, and may include silver (Ag) and epoxy.
- the light emitting device package 1000A may not include the zener diode 150 and the adhesive layer 152, and the embodiment is not limited to the shape or presence of the 150 and 152.
- FIG 8 is a sectional view of a light emitting device package 1000B according to another embodiment.
- the light emitting device package 1000B illustrated in FIG. 8 includes a body 110, first and second lead frames 122 and 124, a light emitting device 130, a molding member 140, a zener diode 150, and an adhesive layer ( 152, first and third wires 162 and 164, and dam 170.
- the light emitting device package 1000B illustrated in FIG. 8 is the same as the light emitting device package 1000A illustrated in FIG. 3 except that the light emitting device package 1000B further includes a dam 170. Therefore, the same reference numerals are used for the same parts as the light emitting device package 1000A shown in FIG. 3 in the light emitting device package 1000B shown in FIG. 8, and overlapping descriptions thereof will be omitted.
- the dam 170 shown in FIG. 8 serves to trap the molding member 140 disposed on the first and second lead frames 122 and 124. That is, the molding member 140 may be disposed in the cavity formed by the dam 170 and the upper surfaces 122HT and 124HT of the first and second lead frames 122 and 124.
- the light emitting device package 1000A according to the embodiment shown in FIG. 3 will be described as follows with reference to FIGS. 9A to 9D.
- the light emitting device package 1000A according to the embodiment may be manufactured by another manufacturing method as shown in FIGS. 9A to 9D.
- the light emitting device package 1000B illustrated in FIG. 8 may be manufactured by the method illustrated in FIGS. 9A to 9D except that the dam 170 is further formed.
- 9A to 9D are cross-sectional views illustrating a method of manufacturing the light emitting device package 1000A according to the embodiment.
- the body 110 and the first and second lead frames 122 and 124 are formed.
- the body 110 is manufactured by black EMC, and each of the first and second lead frames 122 and 124 may be manufactured by copper (Cu).
- the body 110 may be formed by injection molding black EMC into the patterned first and second lead frames 122 and 124.
- the light emitting device 130 is die bonded on the first lead frame 122.
- the light emitting device 130 may have a structure as shown in FIG. 7A as follows.
- the support substrate 132 is formed on the first lead frame 122, and the light emitting structure 134A is formed on the support substrate 132. Support the first material layer for the first conductive semiconductor layer 134A-1, the second material layer for the active layer 134A-2, and the third material layer for the second conductive semiconductor layer 134A-3. It is sequentially formed on the substrate 132.
- the first material layer may be implemented with compound semiconductors such as Groups 3-5 and 2-6, for example, Al x In y Ga (1-xy) N (0 ⁇ x ⁇ 1, 0 ⁇ and a semiconductor material having a compositional formula of y ⁇ 1, 0 ⁇ x + y ⁇ 1).
- the second material layer may include a well layer / barrier layer repeated in a pair structure, and the well layer / barrier layer may be InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, It may include any one of GaP (InGaP) / AlGaP.
- the third material layer may be implemented with compound semiconductors such as Groups 3-5 and 2-6, for example, In x Al y Ga 1-xy N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1 , 0 ⁇ x + y ⁇ 1).
- the first to third material layers may be patterned by a conventional photolithography process to form the light emitting structure 134A. Thereafter, an ohmic contact layer 136 is formed on the light emitting structure 134.
- the adhesive layer 152 and the zener diode 150 may be formed on the second lead frame 124 while the light emitting device 130 is formed.
- the light emitting device 130 is wire bonded. That is, the first wire 162 is formed to electrically connect the second conductivity-type semiconductor layer 134A-3 and the second lead frame 124 of the light emitting device 130, and the zener diode 150 is formed as the first wire.
- the third wire 164 is electrically connected to the lead frame 122.
- a dam process is formed on the sides of the body 110 and the first and second lead frames 122 and 124 to form a cavity in which the molding member 140 is to be accommodated. Proceed.
- the reason for performing the dam process is to prevent the first and second molding members 142 and 144 having flowability (or viscosity) from flowing down before curing.
- dispensing for filling the molding member 140 in the space formed by the dam 210, the first and second lead frames 122 and 124, and the body 110 Proceed with the process.
- the first molding member 142 is formed to the height of the light emitting device 130
- the second molding member 144 is formed on the upper surface of the light emitting device 130 and the first molding member 142.
- the dispensed molding member 140 may not flow down before curing.
- 9A to 9D are cross-sectional views illustrating a process of manufacturing one light emitting device package 1000A, but a plurality of light emitting device packages 1000A may be simultaneously formed through the process illustrated in FIGS. 9A to 9D. In this case, after the process as illustrated in FIG. 9D, a dicing process may be performed to separate the single light emitting device package 1000A.
- the light emitting device packages 1000A and 1000B according to the embodiment having the body 110 implemented by black EMC and a white EMC, a ceramic such as polycyclohexylene-dimethylene terephthalates (PCT), or a substrate formed of AlN The light emitting device package according to the comparative example is compared as follows.
- the light emitting device package according to the comparative example is not shown, for convenience of description, it is assumed that the light emitting device package 1000A, 1000B according to the embodiment includes a substrate instead of the body 110.
- the manufacturing cost of the light emitting device packages 1000A and 1000B according to the embodiment is much lower than the manufacturing cost of the light emitting device package according to the comparative example. This is because ceramic or AlN is 10 to 30 times more expensive than black EMC.
- the light emitting device package according to the comparative example has a substrate made of PCT or white EMC, the rigidity, injection property, and fairness of the light emitting device package may become unstable.
- the light emitting device packages 1000A and 1000B according to the embodiment may implement the body 110 in black EMC, thereby preventing such anxiety.
- black EMC or white EMC includes particles, and the particles included in the black EMC are smaller in size than those included in the white EMC. Therefore, when the body 110 is made of black EMC as in the light emitting device packages 1000A and 1000B according to the embodiment, the degree of integration of the first and second lead frames 122 and 124 is increased, and thus, per unit time. The number of light emitting device packages that can be manufactured can be increased. Furthermore, when the size of the particles is reduced, the degree of freedom of design may increase, for example, the light emitting device packages 1000A and 1000B may be designed in various shapes.
- the thermal resistance from the light emitting device 130 to the first and second lead frames 122 and 124 is 7.5 ° C / W.
- the thermal resistance is relatively smaller as 5 ° C./W. Therefore, at the same power, the light emitting device packages 1000A and 1000B having the body 110 made of black EMC have relatively faster thermal conduction than the light emitting device package according to the comparative example having a substrate made of ceramic or AlN. It has excellent heat dissipation characteristics.
- the substrate is formed of white EMC or ceramic
- the light emitting device package according to the comparative example not only cracks may occur in the substrate, but also dust may occur in the manufacturing process, which may adversely affect the performance of the light emitting device package. have.
- the body 110 is implemented in black EMC as in the light emitting device package according to the embodiment, it is possible to prevent such cracks and dust generation.
- the substrate of the light emitting device package according to the comparative example is made of resin or the like, the substrate has a cup shape and cannot have a flat cross-sectional shape.
- the upper surface of the substrate may have a flat cross-sectional shape, but the ceramic has various problems when compared with the black EMC as described above.
- the upper surface 110T of the body 110 is formed to be flat as illustrated in FIG. can do.
- FIG. 10 is a perspective view of an upper coupling of the light emitting device package 1000C according to still another embodiment
- FIG. 11 is a top exploded perspective view of the light emitting device package 1000C shown in FIG. 10
- FIG. 12 is shown in FIG. 10.
- 10 is a bottom exploded perspective view of the light emitting device package 1000C
- FIG. 13 is a plan view of the light emitting device package 1000C shown in FIG. 10
- FIG. 14 is a bottom view of the light emitting device package 1000C shown in FIG. 10.
- 15 is a perspective view of the upper portion of the light emitting device package 1000C shown in FIG. 10, and FIGS. 16 and 17 are cross-sectional views of the light emitting device package 1000C shown in FIG. 10.
- the light emitting device package 1000C may include first and second lead frames 1112 and 1114, light sources 1122 and 1124, zener diodes 1126, and first To fourth wires 1132 to 1138, an inner body 1140A, an outer body 1150A, a molding member 1160, and an upper structure 1170. 10 to 15, the illustration of the molding member 1160 and the upper structure 1170 is omitted.
- the inner body 1140A electrically separates the first and second lead frames 1112 and 1114 from each other, and may define a cavity C with the first and second lead frames 1112 and 1114. .
- the inner body 1140A may include a lower portion 1140AL and a side portion 1140AS.
- the lower portion 1140AL of the inner body 1140A serves to electrically separate the first and second lead frames 1112 and 1114 from each other.
- a lower portion 1140AL of the inner body 1140A may be disposed between the first and second lead frames 1112 and 1114.
- the side portion 1140AS of the inner body 1140A may extend from the lower portion 1140L to form the side surface of the cavity C.
- FIG. 18 is a perspective view illustrating an upper coupling of the light emitting device package 1000D according to still another embodiment
- FIG. 19 is a perspective view illustrating an upper partial coupling of the light emitting device package 1000D shown in FIG. 18.
- the inner bodies 1140A and 1140B may further include reflective protrusions 1140AP and 1140BP penetrating the upper surfaces of the outer bodies 1150A and 1150B.
- the reflective protrusion 1140AP may protrude in the first outer direction (for example, the x-axis direction) of the light emitting device package 1000C to form the upper surface of the outer body 1150A. Can be divided into two.
- the reflective protrusion 1140BP may protrude in the second outward direction (for example, the x-axis and y-axis directions) so that the upper surface of the outer body 1150B may be divided into four equal parts.
- the embodiment is not limited thereto. That is, according to another embodiment, the inner body 1140A, 1140B may be divided into three equal parts or more than five equal parts of the upper surfaces of the outer bodies 1150A and 1150B.
- the reflective protrusions 1140AP and 1140BP illustrated in FIGS. 10 to 19 may have a symmetrical planar shape. That is, the reflective protrusions 1140AP illustrated in FIGS. 10 to 15 have a planar shape symmetrical in the x-axis direction, and the reflective protrusions 1140BP illustrated in FIGS. 18 and 19 are symmetrical in the x-axis direction and the y-axis direction. It may have a planar shape.
- the light emitting device package 1000D illustrated in FIGS. 18 and 19 is illustrated in FIGS. 10 to 17. It is the same as the light emitting device package 1000C shown. Therefore, the description of the light emitting device package 1000C shown in FIGS. 10 to 17 may be applied to the light emitting device package 1000D shown in FIGS. 18 and 19.
- the lower portion 1140AL of the inner body 1140A may include a plurality of through holes. As illustrated, the lower portion 1140AL of the inner body 1140A may include first to third through holes TH1, TH2, and TH3.
- first and second lead frames 1112 and 1114 may be electrically spaced apart from each other by the inner body 1140A.
- the first and second lead frames 1112 and 1114 serve to supply power to the light sources 1122 and 1124.
- the first and second lead frames 1112 and 1114 may serve to increase light efficiency by reflecting light generated from the light sources 1122 and 1124, and heat generated by the light sources 1122 and 1124. It may also play a role in discharging the gas to outside.
- the first lead frame 1112 may include a first lower lead frame 1112B and a first upper lead frame 1112T.
- the first lower lead frame 1112B may be inserted into and disposed in a portion of the plurality of through holes (for example, the first through hole TH1).
- the first upper lead frame 1112T may be disposed on the first lower lead frame 1112B and may form part of the bottom surface of the cavity C.
- first lower lead frame 1112B and the first upper lead frame 1112T may be separate from each other or may be integrated as illustrated.
- the first upper lead frame 1112T may not be inserted into the first through hole TH1, but embodiments are not limited thereto.
- the first upper lead frame 1112T may have a larger planar area than the first lower lead frame 1112B, but the embodiment is not limited thereto.
- the second lead frame 1114 may include a second lower lead frame 1114B and a second upper lead frame 1114T.
- the second lower lead frame 1114B may be inserted into other parts of the plurality of through holes (eg, the second and third through holes TH2 and TH3).
- the second lower lead frame 1114B may include a second-first lower lead frame 1114B1 and a second-2 lower lead frame 1114B2 that are separate from each other.
- the 2-1 lower lead frame 1114B1 may be inserted into the second through hole TH2, and the 2-2 lower lead frame 1114B2 may be inserted into the third through hole TH3.
- the embodiment is not limited thereto. According to another embodiment, unlike FIG.
- the second lower lead frame 1114B may be one. That is, the 2-1 and 2-2 lower lead frames 1114B1 and 1114B2 may be integrated. If the 2-1 and 2-2 lower lead frames 1114B1 and 1114B2 are integrated, the second and third through holes TH2 and TH3 may be integrated into a through hole (not shown) integrated with each other. The lower lead frame 1114B may be inserted and disposed.
- the second upper lead frame 1114T may be disposed on the second lower lead frame 1114B, and may form another portion of the bottom surface of the cavity C.
- second lower lead frame 1114B and the second upper lead frame 1114T may be separate from each other as illustrated, or may be integrated as illustrated.
- the second upper lead frame 1114T is formed of the second and third holes.
- the embodiment is not limited thereto.
- the second upper lead frame 1114T may have a larger planar area than the second lower lead frame 1114B, but embodiments are not limited thereto.
- the first upper lead frame 1112T, the second upper lead frame 1114T, and the lower portion 1140AL of the inner body 1140A may form the same horizontal plane corresponding to the bottom surface of the cavity C. Referring to FIG. Can be.
- Each of the first and second lead frames 1112 and 1114 may be made of a material having electrical conductivity, but the embodiment is not limited to a specific material of the first and second lead frames 1112 and 1114.
- Each of the first and second lead frames 1112 and 1114 may include at least one of copper (Cu), nickel (Ni), silver (Ag), or gold (Au).
- the base material of each of the first and second lead frames 1112 and 1114 is copper (Cu), and the rough portion of the base is primarily made of copper (Cu) or nickel (Ni).
- the first and second lead frames 1112 and 1114 may be formed by main plating using silver (Ag) or gold (Au).
- the base plating is a surface of the base of the first and second lead frames 1112 and 1114 may be a rough surface on which the bone and the acid are repeated, which means a process of filling the bone with copper (Cu) or nickel (Ni). .
- first lower lead frame 1112B and the second lower lead frame 1114B may be mounted on a printed circuit board (not shown) disposed under the light emitting device package 1000C.
- the light sources 1122 and 1124 may be disposed in at least one of the first or second lead frames 1112 and 1114 within the cavity C.
- the light sources 1122 and 1124 may be light emitting diodes (LEDs) or laser diodes (LDs), and embodiments are not limited to the shapes of the light sources 1122 and 1124.
- the light sources 1122 and 1124 correspond to the light emitting devices 130 (130A, 130B, and 130C) of the above-described embodiment.
- two light sources 1122 and 1124 are illustrated as being disposed, but the embodiment is not limited to the number of light sources 1122 and 1124. That is, according to another embodiment, only one light source may be arranged or three or more light sources may be arranged.
- each of the light sources 1122 and 1124 may have a horizontal bonding structure, but embodiments are not limited thereto. That is, according to another embodiment, each of the light sources 1122 and 1124 may have a vertical bonding structure or a flip chip bonding structure.
- the light sources 1122 and 1124 are illustrated as being disposed on the second lead frame 1114, but embodiments are not limited thereto. That is, according to another embodiment, the light sources 1122 and 1124 may be disposed on the first lead frame 1112.
- 20A to 20C are cross-sectional views of various embodiments 1200A, 1200B, and 1200C of light sources 1122 and 1124 included in the light emitting device packages 1000C and 1000D according to the embodiments.
- Each of the light sources 1122 and 1124 illustrated in FIGS. 10 to 19 may have a horizontal bonding structure as illustrated in FIG. 20A. However, according to another embodiment, each of the light sources 1122 and 1124 may have a vertical bonding structure as shown in FIG. 20B, or may have a flip chip type bonding structure as shown in FIG. 20C.
- the light sources 1200A, 1200B, and 1200C illustrated in FIGS. 20A to 20C may include light emitting structures 1220A, 1250, and 1220B.
- the light emitting structures 1220A, 1250, and 1220B may include the first conductive semiconductor layers 1222A, 1252 and 1222B, the active layers 1224A, 1254 and 1224B, and the second conductive semiconductor layers 1226A, 1256, 1226B).
- the light emitting structures 1220A, 1250, and 1220B may have the same or different constituent materials, which will be described below.
- the substrate 1210A, the light emitting structure 1220A, and the first and second electrodes 1232A and 1234A shown in FIG. 20A are formed of the substrate 131, the light emitting structure 134B, and the first and second electrodes shown in FIG. 7B. Corresponds to the two electrodes 135 and 137, respectively.
- the first electrode 1232A is electrically connected to the first lead frame 1112 by a wire 1242, thereby providing a first conductivity.
- the type semiconductor layer 1222A may be electrically connected to the first lead frame 1112.
- the wire 1242 may correspond to the first wire 1132 illustrated in FIGS. 10 to 19.
- the first electrode 1232A is electrically connected to another light source 1122 adjacent by the wire 1242, thereby providing a first conductivity type.
- the semiconductor layer 1222A may be electrically connected to another light source 1122.
- the wire 1242 may correspond to the second wire 1134 illustrated in FIGS. 10 to 19.
- the second electrode 1234A may be electrically connected to another light source 1124 adjacent by the wire 1244.
- the conductive semiconductor layer 1226A may be electrically connected to another light source 1124.
- the wire 1244 may correspond to the second wire 1134 illustrated in FIGS. 10 to 19.
- the second electrode 1234A may be electrically connected to the second lead frame 1114 by a wire 1244 to form a second conductivity type.
- the semiconductor layer 1226A may be electrically connected to the second lead frame 1114.
- the second wire 1244 may correspond to the third wire 1136 illustrated in FIGS. 10 to 19.
- an ohmic contact layer may be further disposed between the second conductivity-type semiconductor layer 1226A and the second electrode 1234A.
- the ohmic contact layer may be further disposed to improve the ohmic characteristics. . Since the thickness and the material of the ohmic contact layer are the same as the thickness and the material of the ohmic contact layer 136 illustrated in FIG. 7A, redundant description thereof will be omitted.
- the light source 1200B having the vertical bonding structure illustrated in FIG. 20B may include a support substrate 1240, a light emitting structure 1250, and a first electrode 1260. Since the support substrate 1240 and the light emitting structure 1250 illustrated in FIG. 20B correspond to the support substrate 132 and the light emitting structure 134A of the light emitting device 130A illustrated in FIG. 7A, the same descriptions will be repeated. Omit.
- the second conductivity type semiconductor layer 1256 is electrically connected to the second lead frame 1114 through the support substrate 1240.
- the second conductivity-type semiconductor layer 1256 may be electrically connected to the first lead frame 1112 through the support substrate 240.
- the second conductivity-type semiconductor layer 1256 is disposed on the support substrate 1240.
- the second conductivity-type semiconductor layer 1256 may be formed of a semiconductor compound.
- the second conductivity-type semiconductor layer 1256 may be implemented with compound semiconductors such as Groups 3-5 and 2-6, for example, InxAlyGa1-x-yN (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ And 1, 0 ⁇ x + y ⁇ 1). If the second conductivity type is p-type, the second conductivity-type semiconductor layer 1256 may include Mg, Zn, Ca, Sr, and Ba as a p-type dopant.
- the active layer 1254 is the same as the active layer 134A-2 shown in FIG. 7A, overlapping descriptions are omitted.
- the first conductivity type semiconductor layer 1252 is disposed on the active layer 1254.
- the first conductivity-type semiconductor layer 1252 may be implemented as a group III-V compound semiconductor doped with a first conductivity type dopant.
- the n-type dopant may be Si, Ge, Sn, It may include, but is not limited to, Se, Te.
- the first conductivity type semiconductor layer 1252 has a composition formula of, for example, Al x In y Ga (1-xy) N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x + y ⁇ 1). It may include a semiconductor material.
- the first conductive semiconductor layer 1252 may be formed of any one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, InP.
- the first electrode 1260 is disposed on the first conductivity type semiconductor layer 1252. As described above, since the second conductivity type semiconductor layer 1256 is electrically connected to the second lead frame 1114 through the support substrate 1240, no wire is required. On the other hand, the first conductivity type semiconductor layer 1252 may be electrically connected to the first lead frame 1112 by a wire 1272 connected to the first electrode 1260.
- the light source 1200C having the flip chip type bonding structure illustrated in FIG. 20C may include a substrate 1210B, a light emitting structure 1220B, a first electrode 1232B, and a second electrode 1234B.
- the substrate 1210B, the light emitting structure 1220B, the first electrode 1232B, the second electrode 1234B, the first solder portion 1282 and the second solder portion 1284 shown in FIG. 20C are shown in FIG. 7C.
- the overlapping descriptions of the substrate 131, the light emitting structure 134C, the first electrode 135, the second electrode 137, the first solder portion 139A and the second solder portion 139B are omitted. do.
- the first conductive semiconductor layers 1222A, 1252, and 1222B are n-type semiconductor layers, and the second conductive semiconductor layers 1226A, 1256, and 1226B) may be implemented with a p-type semiconductor layer.
- the first conductive semiconductor layers 1222A, 1252, and 1222B may be p-type semiconductor layers, and the second conductive semiconductor layers 1226A, 1256, and 1226B may be n-type semiconductor layers.
- the light emitting structures 1220A, 1250, and 1220B may be implemented as any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure.
- the outer bodies 1150A and 1150B may be disposed to surround the outer side surfaces of the inner bodies 1140A and 1140B.
- the inner bodies 1140A and 1140B and the outer bodies 1150A and 1150B may have a symmetrical planar shape.
- both the horizontal length L1 and the vertical length L2 of the light emitting device package 1000C may be the same.
- the side portion 1140AS of the inner body 1140A may include at least one inner fastening hole IH1 and IH2, and the outer body 1150A may have at least one communicating with the inner fastening holes IH1 and IH2. It may include an outer fastening hole (OH1, OH2, OH3, OH4).
- the inner fastening holes IH1 and IH2 may be formed to be spaced apart from each other at regular intervals, and the outer fastening holes OH1, OH2, OH3 and OH4 may be formed to be spaced apart from each other at regular intervals.
- the first lead frame 1112 may include a first fastening protrusion 1112P and the second lead frame 1114 may include a second fastening protrusion 1114P.
- the first and second fastening protrusions 1112P and 1114P may have a shape protruding toward the inner body 1140A and the outer body 1150A in a third outer direction (eg, the y-axis direction).
- the first fastening protrusion 1112P of the first lead frame 1112 is embedded in the inner fastening hole IH1 and the outer fastening hole OH1, and the second fastening protrusion 1114P of the second lead frame 1114 is inward. It is embedded in the fastening hole (IH2) and the outer fastening holes (OH2, OH3, OH4), it is possible to fasten the inner body (1140A) and the outer body (1150A).
- the number of the first fastening protrusions 1112P is two
- the number of the second fastening protrusions 1114P is four
- the inner fastening holes IH1 and IH2 correspond to the number of these 1112P and 1114P.
- the embodiment is not limited to the number of these 1112P, 1114P, IH1, IH2, OH1, OH2, OH3, OH4.
- the molding member 1160 may be embedded in the cavity C to surround the light sources 1122 and 1124 and the zener diode 1126.
- the molding member 1160 improves the luminous flux of light emitted from the light sources 1122 and 1124 and prevents the light sources 1122 and 1124 and the zener diode 1126 from being damaged from an external environment.
- the molding member 1160 may serve to protect the first to fourth wires 1132 to 1138.
- the molding member 1160 may be made of silicon.
- the molding member 1160 may have a structure in which white silicone and clear silicone are stacked, but the embodiment is not limited to a specific structure or material of the molding member 1160.
- the molding member 1160 may include a wavelength conversion material (eg, a phosphor or a phosphor) for converting the wavelength of the light emitted from the light sources 1122 and 1124.
- the zener diode 1126 may be disposed on any one of the first and second lead frames 1112 and 1114.
- the zener diode 1126 is illustrated as being disposed on the first lead frame 1112, but the embodiment is not limited thereto. That is, according to another embodiment, the zener diode 1126 may be disposed on the second lead frame 1114.
- the Zener diode 1126 and the first lead frame 1112 may be electrically connected to each other by the fourth wire 1138.
- Each of the first to fourth wires 1132 to 1138 described above may be implemented with gold (Au).
- the zener diode 1126 prevents overcurrent flowing through the light emitting device packages 1000C and 1000D or applied voltage electrostatic discharge (ESD).
- an adhesive layer (not shown) may be disposed between the zener diode 1126 and the first lead frame 1112.
- the adhesive layer serves to bond the zener diode 1126 to the first lead frame 1112, has a kind of paste, and may include silver (Ag) and epoxy.
- the light emitting device packages 1000C and 1000D may not include the zener diode 1126 and the adhesive layer, and the embodiment is not limited to the shape or presence of the zener diode 1126 and the adhesive layer.
- the upper structure 1170 may be disposed to cover the cavity C.
- the upper structure 1170 may correspond to a diffusion plate or a lens. In some cases, the upper structure 1170 may be omitted.
- the outer bodies 1150A and 1150B may have a different material from the inner bodies 1140A and 1140B.
- the inner bodies 1140A and 1140B are disposed adjacent to the light sources 1122 and 1124 and define the cavity C, so that the inner bodies 1140A and 1140B may be implemented using a material having better reflection characteristics than rigidity.
- the outer bodies 1150A and 1150B since the outer bodies 1150A and 1150B are disposed outside the light emitting device packages 1000C and 1000D, the outer bodies 1150A and 1150B may be implemented using a material having excellent rigidity rather than reflective characteristics.
- each of the inner bodies 1140A and 1140B and the outer bodies 1150A and 1150B may include an epoxy molding compound (EMC).
- EMC epoxy molding compound
- the inner bodies 1140A and 1140B may include a white EMC
- the outer bodies 1150A and 1150B may include a black EMC.
- the inner body 1140A, 1140B and the outer body 1150A, 1150B may be coupled in an injection molding manner.
- an etching process of etching copper or the like and a stamping process of patterning the bases of the first and second lead frames 1112 and 1114 by punching are performed.
- a plating process of plating the patterned bases of the first and second lead frames 1112 and 1114 is performed.
- the above-described base plating and main plating may be performed.
- the inner body (1140A, 1140B) is formed by injecting white EMC by the primary mold to form the inner body (1140A, 1140B), and by injecting black EMC by the secondary mold to form the outer body (1150A, 1150B).
- the outer body (1150A, 1150B) can be combined.
- the light sources 1122 and 1124 and the first to third wires 1132 to 1136 are formed on the second lead frame 1114. While the light sources 1122 and 1124 and the first to third wires 1132 to 1136 are formed, a zener diode 1126 is formed over the first lead frame 1112 and the fourth wire 1138 is a zener diode 1126. ) And the second lead frame 1114 may be formed by a wire bonding process.
- individual light emitting device packages 1000C and 1000D may be formed by performing a dicing process.
- each of the white EMC and the black EMC may include an epoxy resin, a hardener, and a filler.
- the volume (vol) relative to the weight percent of filler included in the white EMC is 76/83 (vol / wt%)
- the volume (vol) relative to the weight percent of filler included in the black EMC is 84/74. (vol / wt%).
- white EMC is more reflective than black EMC
- black EMC is more rigid than white EMC.
- the breakdown strengths of the white EMC and the black EMC may be as shown in Table 1 below.
- the fracture strength of the black EMC is approximately twice or more than that of the white EMC.
- the light extraction capability is higher than when the inner bodies 1140A and 1140B are implemented by the black EMC. This can be improved.
- the outer side P of the light emitting device packages 1000C and 1000D is implemented as a black EMC having a stronger rigidity than the white EMC, the light emitting device package 1000C is more than when the outer bodies 1150A and 1150B are implemented by the white EMC. , 1000D) is improved, and it is possible to prevent cracks from occurring at the crack generation point P.
- the above-described light emitting device packages 1000C and 1000D dualize the body into the inner bodies 1140A and 1140B and the outer bodies 1150A and 1150B, and the inner bodies 1140A and 1140B are made of white EMC having better reflectivity than black EMC.
- the outer bodies 1150A and 1150B may be implemented by black EMC having stiffness superior to white EMC, and thus may have high rigidity while having excellent light extraction efficiency.
- any one of the light emitting device packages 1000A, 1000B, 1000C, and 1000D according to the above-described embodiments may be applied to other embodiments. That is, as long as they are not opposite to each other, the descriptions of the embodiments 1000A and 1000B may be applied to other embodiments 1000C and 1000D, and the descriptions of the embodiments 1000C and 1000D may be described in other embodiments 1000A and 1000B. Can also be applied.
- a plurality of light emitting device packages 1000A, 1000B, 1000C, and 1000D may be arranged on a substrate, and a light guide plate and a prism, which is an optical member, on an optical path of the light emitting device packages 1000A, 1000B, 1000C, and 1000D. Sheets, diffusion sheets, and the like may be disposed.
- the light emitting device packages 1000A, 1000B, 1000C, and 1000D, the substrate, and the optical member may function as a backlight unit.
- the light emitting device packages 1000A, 1000B, 1000C, and 1000D may be applied to the display device, the indicator device, and the lighting device.
- the display device may include a bottom cover, a reflector disposed on the bottom cover, a light emitting module for emitting light, a light guide plate disposed in front of the reflector, and guiding light emitted from the light emitting module to the front, and in front of the light guide plate.
- An optical sheet including prism sheets disposed, a display panel disposed in front of the optical sheet, an image signal output circuit connected to the display panel and supplying an image signal to the display panel, and a color filter disposed in front of the display panel. It may include.
- the bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit.
- the lighting apparatus processes or converts a light source module including a substrate and light emitting device packages 1000A, 1000B, 1000C, and 1000D according to an embodiment, a radiator for dissipating heat of the light source module, and an electrical signal provided from the outside. It may include a power supply to provide a light source module.
- the lighting device may include a lamp, a head lamp, or a street lamp.
- the head lamp includes a light emitting module including light emitting device packages 1000A, 1000B, 1000C, and 1000D disposed on a substrate, a reflector for reflecting light emitted from the light emitting module in a predetermined direction, for example, a front, and a reflector. It may include a lens for refracting the reflected light forward, and a shade for blocking or reflecting a portion of the light reflected by the reflector toward the lens to achieve a light distribution pattern desired by the designer.
- the light emitting device package according to the embodiment may be used in a display device, an indicator device, and a lighting device.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
Description
구 분 | 블랙 EMC | 화이트 EMC | ||
파괴강도(㎏/f) | 최소값(MIN) | 2.66 | 최소값(MIN) | 1.31 |
최대값(MAX) | 4.57 | 최대값(MAX) | 1.77 | |
평균치(Avg) | 3.24 | 평균치(Avg) | 1.56 |
Claims (10)
- 카본 블랙을 포함하는 블랙 에폭시 몰딩 컴파운드(EMC)를 포함하는 몸체;상기 몸체에 의해 서로 전기적으로 이격된 제1 및 제2 리드 프레임;상기 제1 및 제2 리드 프레임 중 적어도 하나의 위에 배치된 발광 소자; 및상기 발광 소자를 에워싸도록 상기 몸체와 상기 제1 및 제2 리드 프레임 위에 배치된 몰딩 부재를 포함하고,상기 제1 리드 프레임은제1-1 층; 및상기 제1-1 층 위에 배치되며, 상기 제1-1 층보다 넓은 제1-2 층을 포함하고,상기 제2 리드 프레임은제2-1 층; 및상기 제2-1 층 위에 배치되며, 상기 제2-1 층보다 넓은 제2-2 층을 포함하고,상기 몸체는상기 제1-1 층이 수용되는 제1-1 수용 공간;상기 제2-1 층이 수용되는 제2-1 수용 공간;상기 제1-1 수용 공간과 상기 제2-1 수용 공간을 서로 이격시키며 배치된 격벽;상기 제1-2 층이 수용되며 상기 제1-1 수용 공간 위에 제1-2 수용 공간; 및상기 제2-2 층이 수용되며 상기 제2-1 수용 공간 위에 제2-2 수용 공간을 포함하고,상기 제1-2 층은 상기 제1-2 수용 공간의 바깥쪽으로 돌출된 적어도 하나의 제1 돌출부를 포함하고,상기 제2-2 층은 상기 제2-2 수용 공간의 바깥쪽으로 돌출된 적어도 하나의 제2 돌출부를 포함하고,상기 몸체는 상기 제1 및 제2 돌출부를 수용하는 복수의 블라인드 홀을 포함하는 발광 소자 패키지.
- 제1 항에 있어서, 상기 몸체의 탑면과 상기 제1 및 제2 리드 프레임 각각의 탑면은 동일 수평면 상에 위치하고,상기 몸체의 탑면과 상기 제1 및 제2 리드 프레임 각각의 탑면은 플랫한 형상을 갖는 발광 소자 패키지.
- 제1 항에 있어서, 상기 발광 소자로부터 상기 제1 및 제2 리드 프레임의 하단까지의 열 저항은 5 ℃/W인 발광 소자 패키지.
- 제1 항에 있어서, 상기 발광 소자는 발광 구조물을 포함하고,상기 발광 구조물은제1 도전형 반도체층;상기 제1 도전형 반도체층 위에 배치된 활성층; 및상기 활성층 위에 배치된 제2 도전형 반도체층을 포함하는 발광 소자 패키지.
- 제4 항에 있어서, 상기 발광 소자 패키지는상기 제2 도전형 반도체층을 상기 제2 리드 프레임에 전기적으로 연결하는 제1 와이어를 더 포함하고,상기 제1 도전형 반도체층은 상기 제1 리드 프레임에 전기적으로 연결된 발광 소자 패키지.
- 제1 항에 있어서, 상기 발광 소자는 발광 구조물을 포함하고,상기 발광 구조물은제1 도전형 반도체층;상기 제1 도전형 반도체층 아래에 배치된 활성층; 및상기 활성층 아래에 배치된 제2 도전형 반도체층을 포함하고,상기 발광 소자는상기 발광 구조물 위에 배치된 기판;상기 제1 도전형 반도체층 아래에 배치된 제1 전극; 및상기 제2 도전형 반도체층 아래에 배치된 제2 전극을 더 포함하는 발광 소자 패키지.
- 제1 항에 있어서, 상기 몸체는상기 제1 및 제2 리드 프레임을 서로 전기적으로 분리시키며, 상기 제1 및 제2 리드 프레임과 함께 캐비티를 정의하는 내측 몸체; 및상기 내측 몸체의 바깥 측면을 감싸며, 상기 내측 몸체와 다른 재질을 갖는 외측 몸체를 포함하고,상기 발광 소자는 상기 캐비티 내에 배치되는 발광 소자 패키지.
- 제7 항에 있어서, 상기 내측 몸체와 상기 외측 몸체 각각은 EMC를 포함하고, 상기 내측 몸체는 화이트 EMC를 포함하고, 상기 외측 몸체는 상기 블랙 EMC를 포함하는 발광 소자 패키지.
- 제7 항에 있어서, 상기 내측 몸체는상기 제1 및 제2 리드 프레임을 서로 전기적으로 이격시키는 하부; 및상기 하부로부터 연장되어 상기 캐비티의 측면을 형성하는 측부를 포함하고, 상기 내측 몸체는 상기 외측 몸체의 상부면을 관통하는 반사 돌출부를 더 포함하고, 상기 반사 돌출부는 상기 외측 몸체의 상부면을 2등분 또는 4등분하는 발광 소자 패키지.
- 제1 항 내지 제9 항 중 어느 한 항에 기재된 발광 소자 패키지를 포함하는 조명 장치.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201780010898.2A CN108633317B (zh) | 2016-02-12 | 2017-02-10 | 发光器件封装和包括该发光器件封装的照明设备 |
EP17750471.9A EP3416202B1 (en) | 2016-02-12 | 2017-02-10 | Light emitting device package and lighting apparatus comprising same |
JP2018541110A JP6901490B2 (ja) | 2016-02-12 | 2017-02-10 | 発光素子パッケージ及びこれを含む照明装置 |
US16/077,360 US10557596B2 (en) | 2016-02-12 | 2017-02-10 | Light emitting device package having a black epoxy molding compound (EMC) body and lighting apparatus including the same |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2016-0016104 | 2016-02-12 | ||
KR1020160016104A KR102562091B1 (ko) | 2016-02-12 | 2016-02-12 | 발광 소자 패키지 |
KR10-2016-0021779 | 2016-02-24 | ||
KR1020160021779A KR102509312B1 (ko) | 2016-02-24 | 2016-02-24 | 발광 소자 패키지 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2017138779A1 true WO2017138779A1 (ko) | 2017-08-17 |
Family
ID=59563219
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2017/001498 WO2017138779A1 (ko) | 2016-02-12 | 2017-02-10 | 발광 소자 패키지 및 이를 포함하는 조명 장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10557596B2 (ko) |
EP (1) | EP3416202B1 (ko) |
JP (1) | JP6901490B2 (ko) |
CN (1) | CN108633317B (ko) |
WO (1) | WO2017138779A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2608963A (en) * | 2017-10-31 | 2023-01-18 | Rentokil Initial 1927 Plc | A lamp for an insect light trap, and an insect light trap |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11677059B2 (en) | 2017-04-26 | 2023-06-13 | Samsung Electronics Co., Ltd. | Light-emitting device package including a lead frame |
KR102335216B1 (ko) * | 2017-04-26 | 2021-12-03 | 삼성전자 주식회사 | 발광소자 패키지 |
KR20200112369A (ko) * | 2019-03-22 | 2020-10-05 | 삼성전자주식회사 | 발광 소자 패키지 |
US11329206B2 (en) * | 2020-09-28 | 2022-05-10 | Dominant Opto Technologies Sdn Bhd | Lead frame and housing sub-assembly for use in a light emitting diode package and method for manufacturing the same |
CN112599695B (zh) * | 2020-12-10 | 2022-11-04 | 深圳市华星光电半导体显示技术有限公司 | 显示装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007073575A (ja) * | 2005-09-05 | 2007-03-22 | Matsushita Electric Ind Co Ltd | 半導体発光装置 |
JP2011151069A (ja) * | 2010-01-19 | 2011-08-04 | Dainippon Printing Co Ltd | 樹脂付リードフレーム、リードフレーム、半導体装置および樹脂付リードフレームの製造方法 |
KR20130123088A (ko) * | 2012-05-02 | 2013-11-12 | 김미숙 | 발광 다이오드 패키지 및 그 제조 방법 |
KR20150109590A (ko) * | 2014-03-20 | 2015-10-02 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
KR20150127433A (ko) * | 2014-05-07 | 2015-11-17 | 서울반도체 주식회사 | 발광 다이오드 패키지 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4916464A (en) * | 1987-04-22 | 1990-04-10 | Oki Electric Industry Co., Ltd. | Light emitting diode array print head having no bonding wire connections |
US5416871A (en) * | 1993-04-09 | 1995-05-16 | Sumitomo Electric Industries, Ltd. | Molded optical connector module |
US5951152A (en) * | 1997-06-17 | 1999-09-14 | Lumex, Inc. | Light source housing apparatus and method of manufacture |
US6116946A (en) * | 1998-07-27 | 2000-09-12 | Lewis; Daniel Raymond | Surface mounted modular jack with integrated magnetics and LEDS |
WO2000079605A1 (en) | 1999-06-23 | 2000-12-28 | Citizen Electronics Co., Ltd. | Light emitting diode |
US6349105B1 (en) * | 2000-04-07 | 2002-02-19 | Stratos Lightwave, Inc. | Small format optical subassembly |
JP4045781B2 (ja) | 2001-08-28 | 2008-02-13 | 松下電工株式会社 | 発光装置 |
JP4269709B2 (ja) * | 2002-02-19 | 2009-05-27 | 日亜化学工業株式会社 | 発光装置およびその製造方法 |
JP2003304000A (ja) * | 2002-04-08 | 2003-10-24 | Citizen Electronics Co Ltd | 発光ダイオード用パッケージの製造方法 |
KR100567559B1 (ko) * | 2002-07-25 | 2006-04-05 | 마츠시다 덴코 가부시키가이샤 | 광전소자부품 |
JP4691955B2 (ja) * | 2003-10-28 | 2011-06-01 | 日亜化学工業株式会社 | 蛍光物質および発光装置 |
JP4798000B2 (ja) * | 2007-01-15 | 2011-10-19 | パナソニック電工株式会社 | Ledパッケージ |
JP5125450B2 (ja) | 2007-03-13 | 2013-01-23 | 日立化成工業株式会社 | 熱硬化性光反射用樹脂組成物、光半導体素子搭載用基板とその製造方法および光半導体装置 |
JP2010153666A (ja) * | 2008-12-25 | 2010-07-08 | Showa Denko Kk | 発光装置、発光モジュール、発光装置の製造方法 |
JP5488326B2 (ja) | 2009-09-01 | 2014-05-14 | 信越化学工業株式会社 | 光半導体装置用白色熱硬化性シリコーンエポキシ混成樹脂組成物及びその製造方法並びにプレモールドパッケージ及びled装置 |
US9733357B2 (en) * | 2009-11-23 | 2017-08-15 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Infrared proximity sensor package with improved crosstalk isolation |
TW201128812A (en) * | 2009-12-01 | 2011-08-16 | Lg Innotek Co Ltd | Light emitting device |
DE102009058421A1 (de) * | 2009-12-16 | 2011-06-22 | OSRAM Opto Semiconductors GmbH, 93055 | Verfahren zur Herstellung eines Gehäuses für ein optoelektronisches Halbleiterbauteil, Gehäuse und optoelektronisches Halbleiterbauteil |
JP5347953B2 (ja) * | 2009-12-28 | 2013-11-20 | 日亜化学工業株式会社 | 発光装置およびその製造方法 |
CN102473827A (zh) * | 2010-01-29 | 2012-05-23 | 株式会社东芝 | Led封装及其制造方法 |
US9882094B2 (en) * | 2011-03-14 | 2018-01-30 | Intellectual Discovery Co., Ltd. | Light source with inner and outer bodies comprising three different encapsulants |
JP5119364B1 (ja) | 2011-09-16 | 2013-01-16 | 積水化学工業株式会社 | 光半導体装置用白色硬化性組成物及び光半導体装置用成形体 |
CN202695533U (zh) * | 2012-06-29 | 2013-01-23 | 四川柏狮光电技术有限公司 | 热电分离的led支架 |
KR101973395B1 (ko) * | 2012-08-09 | 2019-04-29 | 엘지이노텍 주식회사 | 발광 모듈 |
JP6476567B2 (ja) * | 2013-03-29 | 2019-03-06 | 日亜化学工業株式会社 | 発光装置 |
JP6323217B2 (ja) * | 2013-07-10 | 2018-05-16 | 日亜化学工業株式会社 | 発光装置 |
US20150330772A1 (en) * | 2014-05-15 | 2015-11-19 | Nataporn Charusabha | Proximity Sensor Having a Daughterboard-Mounted Light Detector |
KR102252156B1 (ko) * | 2014-07-08 | 2021-05-17 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
KR102323593B1 (ko) * | 2014-07-23 | 2021-11-17 | 엘지이노텍 주식회사 | 광원 모듈 및 이를 구비한 표시 모듈 |
US10217918B2 (en) * | 2014-08-26 | 2019-02-26 | Lg Innotek Co., Ltd. | Light-emitting element package |
-
2017
- 2017-02-10 CN CN201780010898.2A patent/CN108633317B/zh active Active
- 2017-02-10 JP JP2018541110A patent/JP6901490B2/ja active Active
- 2017-02-10 WO PCT/KR2017/001498 patent/WO2017138779A1/ko active Application Filing
- 2017-02-10 EP EP17750471.9A patent/EP3416202B1/en active Active
- 2017-02-10 US US16/077,360 patent/US10557596B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007073575A (ja) * | 2005-09-05 | 2007-03-22 | Matsushita Electric Ind Co Ltd | 半導体発光装置 |
JP2011151069A (ja) * | 2010-01-19 | 2011-08-04 | Dainippon Printing Co Ltd | 樹脂付リードフレーム、リードフレーム、半導体装置および樹脂付リードフレームの製造方法 |
KR20130123088A (ko) * | 2012-05-02 | 2013-11-12 | 김미숙 | 발광 다이오드 패키지 및 그 제조 방법 |
KR20150109590A (ko) * | 2014-03-20 | 2015-10-02 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
KR20150127433A (ko) * | 2014-05-07 | 2015-11-17 | 서울반도체 주식회사 | 발광 다이오드 패키지 |
Non-Patent Citations (1)
Title |
---|
See also references of EP3416202A4 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2608963A (en) * | 2017-10-31 | 2023-01-18 | Rentokil Initial 1927 Plc | A lamp for an insect light trap, and an insect light trap |
Also Published As
Publication number | Publication date |
---|---|
EP3416202A1 (en) | 2018-12-19 |
EP3416202A4 (en) | 2019-09-25 |
CN108633317A (zh) | 2018-10-09 |
EP3416202B1 (en) | 2021-04-07 |
JP6901490B2 (ja) | 2021-07-14 |
US10557596B2 (en) | 2020-02-11 |
JP2019505097A (ja) | 2019-02-21 |
CN108633317B (zh) | 2021-07-09 |
US20190086039A1 (en) | 2019-03-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2017030396A1 (ko) | 발광 소자, 이 소자를 포함하는 발광 소자 패키지 및 이 패키지를 포함하는 발광 장치 | |
WO2017138779A1 (ko) | 발광 소자 패키지 및 이를 포함하는 조명 장치 | |
WO2017222341A1 (ko) | 반도체 소자 및 이를 포함하는 반도체 소자 패키지 | |
WO2015156588A1 (ko) | 발광소자 및 조명시스템 | |
WO2017179944A1 (ko) | 발광소자, 발광소자 패키지 및 발광모듈 | |
WO2017150910A1 (ko) | 발광 모듈 및 표시장치 | |
WO2016089052A1 (ko) | 발광 모듈 | |
WO2016032167A1 (ko) | 발광 소자 패키지 | |
WO2017191966A1 (ko) | 반도체 소자 패키지 | |
WO2016117910A1 (ko) | 발광 소자 | |
WO2013183888A1 (ko) | 발광소자 | |
WO2016148539A1 (ko) | 발광 소자 및 이를 구비한 카메라 모듈 | |
WO2017135763A1 (ko) | 발광소자 및 이를 포함하는 발광소자 패키지 | |
WO2015190722A1 (ko) | 발광 소자 및 조명 장치 | |
WO2018106030A9 (ko) | 발광소자 | |
WO2019045167A1 (ko) | 발광소자 패키지 및 이를 구비한 광원 장치 | |
WO2014181996A1 (ko) | 발광 소자 | |
WO2017188795A1 (ko) | 형광체 조성물, 이를 포함하는 발광 소자 패키지 및 조명 장치 | |
WO2017034356A1 (ko) | 발광소자 및 이를 포함하는 발광소자 패키지 | |
WO2013162337A1 (en) | Light emitting device and light emitting device package | |
WO2015020358A1 (ko) | 발광소자 | |
WO2017034212A1 (ko) | 발광소자 및 이를 구비한 발광 소자 패키지 | |
WO2018088851A1 (ko) | 반도체 소자 | |
WO2013172606A1 (ko) | 발광소자, 발광소자 페키지 및 라이트 유닛 | |
WO2018128419A1 (ko) | 반도체 소자 및 이를 포함하는 발광소자 패키지 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 17750471 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2018541110 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2017750471 Country of ref document: EP |
|
ENP | Entry into the national phase |
Ref document number: 2017750471 Country of ref document: EP Effective date: 20180912 |