WO2017102069A1 - Beschichtungsquelle mit strukturierung - Google Patents
Beschichtungsquelle mit strukturierung Download PDFInfo
- Publication number
- WO2017102069A1 WO2017102069A1 PCT/EP2016/002059 EP2016002059W WO2017102069A1 WO 2017102069 A1 WO2017102069 A1 WO 2017102069A1 EP 2016002059 W EP2016002059 W EP 2016002059W WO 2017102069 A1 WO2017102069 A1 WO 2017102069A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- coating material
- coating
- structuring
- source
- support element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0635—Carbides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/067—Borides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
Definitions
- Joining step over brazing also deliberately cracks into a brittle
- the coating material itself may be formed in one or more parts. If the coating material is designed in several parts, the structuring can be incorporated into all or even only some of the parts of the coating material.
- the shape, or the cross section of these recesses, grooves, notches or slots can also be designed differently.
- the cross section may have the shape of a semicircle, a rectangle, a square, a triangle, or a trapezoid.
- the cracks preferably extend in their depth (spatial extent in the direction of the thickness of the coating source) completely through the
- Coating source By structuring on the surface of the coating material facing away from the support element therefore finds a
- a coating source according to the invention may comprise a coating material of different brittle materials.
- the coating material of carbides (eg: TiC, SiC, WC), borides (eg: T1B2, VB2, CrB 2 ), nitrides (eg: TiN, AlN, TiNaIN), silicides (eg: TiSi 2 , CrSi 2 , M0S12), oxides (eg: Al 2 O 3, (Al, Cr) 2O 3), brittle metals (eg: Cr, Si), intermetallic phases (eg: T13AI, T1AI3, AUCr) or mixtures of the abovementioned materials.
- the coating material of carbides (eg: TiC, SiC, WC), borides (eg: T1B2, VB2, CrB 2 ), nitrides (eg: TiN, AlN, TiNaIN), silicides (eg: TiSi 2 , CrSi 2 , M0S12
- Ratio X d2 / (d2 + d3) of the thickness of the coating material d2 to Sum cfc + cb of the thickness of the coating material d2 and thickness of the
- Supporting element d3 of greater than or equal to 0.6. It is even more preferable to have a maximum ratio X of 0.85.
- a thermal treatment of the coating source can take place, for example via rapid cooling by means of liquid nitrogen.
- a thermal treatment of the coating source can take place, for example via rapid cooling by means of liquid nitrogen.
- Coating source to a deflection of the support element instead of cracking in the coating material. It is believed that in such cases the tensile stresses in the coating material are lower than the breaking stress of the coating material. Such deformed (bent) coating sources can not properly in a
- Coating material d2 and thickness of the support element d3 of greater or equal to 0.6. It is even more preferable to have a maximum ratio X of 0.85.
- Figure 1 shows a coating source (1) for the physical
- the coating material (2) is with the
- the cracks (4) run as far as possible along the structuring (5).
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020187017106A KR102657632B1 (ko) | 2015-12-18 | 2016-12-07 | 구조부를 갖는 코팅 소스 |
| EP16819815.8A EP3390684B1 (de) | 2015-12-18 | 2016-12-07 | Beschichtungsquelle mit strukturierung |
| JP2018531419A JP7023844B2 (ja) | 2015-12-18 | 2016-12-07 | 構造化物を有する成膜源 |
| US16/061,688 US20190003036A1 (en) | 2015-12-18 | 2016-12-07 | Structured coating source |
| CN201680074480.3A CN108391438B (zh) | 2015-12-18 | 2016-12-07 | 结构化涂层源 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ATGM371/2015 | 2015-12-18 | ||
| ATGM371/2015U AT15050U1 (de) | 2015-12-18 | 2015-12-18 | Beschichtungsquelle mit Strukturierung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2017102069A1 true WO2017102069A1 (de) | 2017-06-22 |
Family
ID=57227207
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2016/002059 Ceased WO2017102069A1 (de) | 2015-12-18 | 2016-12-07 | Beschichtungsquelle mit strukturierung |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20190003036A1 (enExample) |
| EP (1) | EP3390684B1 (enExample) |
| JP (1) | JP7023844B2 (enExample) |
| KR (1) | KR102657632B1 (enExample) |
| CN (1) | CN108391438B (enExample) |
| AT (1) | AT15050U1 (enExample) |
| TW (1) | TWI711710B (enExample) |
| WO (1) | WO2017102069A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102020115914B4 (de) | 2020-06-17 | 2024-03-07 | Sindlhauser Materials Gmbh | Flächiges Sputtertarget |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113930744B (zh) * | 2021-09-29 | 2023-12-15 | 西北核技术研究所 | 一种具有高发射阈值的梯度涂层及其制备方法 |
| KR20250086259A (ko) | 2023-12-06 | 2025-06-13 | 이유진 | 책상의 기능이 내재되어 있는 캐리어 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62278261A (ja) | 1986-05-26 | 1987-12-03 | Seiko Epson Corp | スパツタ用タ−ゲツトの製造方法 |
| JPH05230642A (ja) * | 1992-02-21 | 1993-09-07 | Nissin High Voltage Co Ltd | スパッタ・ターゲット |
| WO2015197196A1 (de) * | 2014-06-27 | 2015-12-30 | Plansee Composite Materials Gmbh | Sputtering target |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61291964A (ja) * | 1985-06-17 | 1986-12-22 | Anelva Corp | スパツタ用樹脂タ−ゲツト |
| JPS63216969A (ja) * | 1987-03-05 | 1988-09-09 | Daido Steel Co Ltd | 加工方法 |
| EP0483375B1 (en) * | 1990-05-15 | 1996-03-13 | Kabushiki Kaisha Toshiba | Sputtering target and production thereof |
| JPH05214518A (ja) * | 1992-02-04 | 1993-08-24 | Hitachi Metals Ltd | スパッタリングターゲットとバッキングプレートの接合体の矯正方法およびスパッタリングターゲット材 |
| JP3460506B2 (ja) * | 1996-11-01 | 2003-10-27 | 三菱マテリアル株式会社 | 高誘電体膜形成用スパッタリングターゲット |
| DE102004020404B4 (de) * | 2004-04-23 | 2007-06-06 | H. C. Starck Gmbh & Co. Kg | Trägerplatte für Sputtertargets, Verfahren zu ihrer Herstellung und Einheit aus Trägerplatte und Sputtertarget |
| EP1851166A2 (en) * | 2005-01-12 | 2007-11-07 | New York University | System and method for processing nanowires with holographic optical tweezers |
| JP5928237B2 (ja) * | 2012-08-08 | 2016-06-01 | 住友金属鉱山株式会社 | Cu−Ga合金スパッタリングターゲット及びその製造方法 |
| CN104711525B (zh) * | 2013-12-13 | 2018-01-26 | 吉坤日矿日石金属株式会社 | 溅射靶及其制造方法 |
-
2015
- 2015-12-18 AT ATGM371/2015U patent/AT15050U1/de unknown
-
2016
- 2016-10-24 TW TW105134281A patent/TWI711710B/zh not_active IP Right Cessation
- 2016-12-07 EP EP16819815.8A patent/EP3390684B1/de active Active
- 2016-12-07 CN CN201680074480.3A patent/CN108391438B/zh active Active
- 2016-12-07 WO PCT/EP2016/002059 patent/WO2017102069A1/de not_active Ceased
- 2016-12-07 KR KR1020187017106A patent/KR102657632B1/ko active Active
- 2016-12-07 JP JP2018531419A patent/JP7023844B2/ja active Active
- 2016-12-07 US US16/061,688 patent/US20190003036A1/en not_active Abandoned
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62278261A (ja) | 1986-05-26 | 1987-12-03 | Seiko Epson Corp | スパツタ用タ−ゲツトの製造方法 |
| JPH05230642A (ja) * | 1992-02-21 | 1993-09-07 | Nissin High Voltage Co Ltd | スパッタ・ターゲット |
| WO2015197196A1 (de) * | 2014-06-27 | 2015-12-30 | Plansee Composite Materials Gmbh | Sputtering target |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102020115914B4 (de) | 2020-06-17 | 2024-03-07 | Sindlhauser Materials Gmbh | Flächiges Sputtertarget |
Also Published As
| Publication number | Publication date |
|---|---|
| US20190003036A1 (en) | 2019-01-03 |
| EP3390684B1 (de) | 2020-03-18 |
| AT15050U1 (de) | 2016-11-15 |
| JP7023844B2 (ja) | 2022-02-22 |
| TWI711710B (zh) | 2020-12-01 |
| KR102657632B1 (ko) | 2024-04-15 |
| TW201736625A (zh) | 2017-10-16 |
| CN108391438A (zh) | 2018-08-10 |
| KR20180094910A (ko) | 2018-08-24 |
| JP2019502024A (ja) | 2019-01-24 |
| CN108391438B (zh) | 2020-04-14 |
| EP3390684A1 (de) | 2018-10-24 |
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