TWI711710B - 結構化披覆源 - Google Patents
結構化披覆源 Download PDFInfo
- Publication number
- TWI711710B TWI711710B TW105134281A TW105134281A TWI711710B TW I711710 B TWI711710 B TW I711710B TW 105134281 A TW105134281 A TW 105134281A TW 105134281 A TW105134281 A TW 105134281A TW I711710 B TWI711710 B TW I711710B
- Authority
- TW
- Taiwan
- Prior art keywords
- coating
- source
- scope
- patent application
- cracks
- Prior art date
Links
- 238000000576 coating method Methods 0.000 title claims abstract description 187
- 239000011248 coating agent Substances 0.000 title claims abstract description 175
- 239000000463 material Substances 0.000 claims abstract description 227
- 238000000034 method Methods 0.000 claims abstract description 39
- 238000005240 physical vapour deposition Methods 0.000 claims abstract description 12
- 238000005253 cladding Methods 0.000 claims description 58
- 238000005219 brazing Methods 0.000 claims description 33
- 238000001816 cooling Methods 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 21
- 229910045601 alloy Inorganic materials 0.000 claims description 13
- 239000000956 alloy Substances 0.000 claims description 13
- 238000005520 cutting process Methods 0.000 claims description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- 239000011733 molybdenum Substances 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 239000010937 tungsten Substances 0.000 claims description 8
- 229910016005 MoSiB Inorganic materials 0.000 claims description 7
- 238000003825 pressing Methods 0.000 claims description 6
- 238000000227 grinding Methods 0.000 claims description 4
- 230000003628 erosive effect Effects 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 230000035882 stress Effects 0.000 description 30
- 230000015572 biosynthetic process Effects 0.000 description 12
- 239000000203 mixture Substances 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000012634 fragment Substances 0.000 description 4
- 229910010038 TiAl Inorganic materials 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 150000001247 metal acetylides Chemical class 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 238000005477 sputtering target Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910015269 MoCu Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000007850 fluorescent dye Substances 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000010327 methods by industry Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- -1 (Al Inorganic materials 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910019974 CrSi Inorganic materials 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000008266 hair spray Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0635—Carbides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/067—Borides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ATGM371/2015U AT15050U1 (de) | 2015-12-18 | 2015-12-18 | Beschichtungsquelle mit Strukturierung |
| ATATGM371/2015 | 2015-12-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201736625A TW201736625A (zh) | 2017-10-16 |
| TWI711710B true TWI711710B (zh) | 2020-12-01 |
Family
ID=57227207
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105134281A TWI711710B (zh) | 2015-12-18 | 2016-10-24 | 結構化披覆源 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20190003036A1 (enExample) |
| EP (1) | EP3390684B1 (enExample) |
| JP (1) | JP7023844B2 (enExample) |
| KR (1) | KR102657632B1 (enExample) |
| CN (1) | CN108391438B (enExample) |
| AT (1) | AT15050U1 (enExample) |
| TW (1) | TWI711710B (enExample) |
| WO (1) | WO2017102069A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102020115914B4 (de) | 2020-06-17 | 2024-03-07 | Sindlhauser Materials Gmbh | Flächiges Sputtertarget |
| CN113930744B (zh) * | 2021-09-29 | 2023-12-15 | 西北核技术研究所 | 一种具有高发射阈值的梯度涂层及其制备方法 |
| KR20250086259A (ko) | 2023-12-06 | 2025-06-13 | 이유진 | 책상의 기능이 내재되어 있는 캐리어 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61291964A (ja) * | 1985-06-17 | 1986-12-22 | Anelva Corp | スパツタ用樹脂タ−ゲツト |
| JPS62278261A (ja) * | 1986-05-26 | 1987-12-03 | Seiko Epson Corp | スパツタ用タ−ゲツトの製造方法 |
| JPH05230642A (ja) * | 1992-02-21 | 1993-09-07 | Nissin High Voltage Co Ltd | スパッタ・ターゲット |
| US5612571A (en) * | 1990-05-15 | 1997-03-18 | Kabushiki Kaisha Toshiba | Sputtered silicide film |
| US5997704A (en) * | 1996-11-01 | 1999-12-07 | Mitsubishi Materials Corporation | Sputtering target for depositing ferroelectric film, method for preparing the same, and method for preparing a DRAM using the same |
| TW200604362A (en) * | 2004-04-23 | 2006-02-01 | Starck H C Gmbh | Backing plate for sputter targets |
| US7850829B2 (en) * | 2005-01-12 | 2010-12-14 | Tosoh Smd, Inc. | Sputter targets with expansion grooves for reduced separation |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63216969A (ja) * | 1987-03-05 | 1988-09-09 | Daido Steel Co Ltd | 加工方法 |
| JPH05214518A (ja) * | 1992-02-04 | 1993-08-24 | Hitachi Metals Ltd | スパッタリングターゲットとバッキングプレートの接合体の矯正方法およびスパッタリングターゲット材 |
| JP5928237B2 (ja) * | 2012-08-08 | 2016-06-01 | 住友金属鉱山株式会社 | Ｃｕ−Ｇａ合金スパッタリングターゲット及びその製造方法 |
| CN104711525B (zh) * | 2013-12-13 | 2018-01-26 | 吉坤日矿日石金属株式会社 | 溅射靶及其制造方法 |
| CN106471151B (zh) | 2014-06-27 | 2019-06-18 | 攀时复合材料有限公司 | 溅镀靶 |
-
2015
- 2015-12-18 AT ATGM371/2015U patent/AT15050U1/de unknown
-
2016
- 2016-10-24 TW TW105134281A patent/TWI711710B/zh not_active IP Right Cessation
- 2016-12-07 EP EP16819815.8A patent/EP3390684B1/de active Active
- 2016-12-07 CN CN201680074480.3A patent/CN108391438B/zh active Active
- 2016-12-07 WO PCT/EP2016/002059 patent/WO2017102069A1/de not_active Ceased
- 2016-12-07 KR KR1020187017106A patent/KR102657632B1/ko active Active
- 2016-12-07 JP JP2018531419A patent/JP7023844B2/ja active Active
- 2016-12-07 US US16/061,688 patent/US20190003036A1/en not_active Abandoned
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61291964A (ja) * | 1985-06-17 | 1986-12-22 | Anelva Corp | スパツタ用樹脂タ−ゲツト |
| JPS62278261A (ja) * | 1986-05-26 | 1987-12-03 | Seiko Epson Corp | スパツタ用タ−ゲツトの製造方法 |
| US5612571A (en) * | 1990-05-15 | 1997-03-18 | Kabushiki Kaisha Toshiba | Sputtered silicide film |
| JPH05230642A (ja) * | 1992-02-21 | 1993-09-07 | Nissin High Voltage Co Ltd | スパッタ・ターゲット |
| US5997704A (en) * | 1996-11-01 | 1999-12-07 | Mitsubishi Materials Corporation | Sputtering target for depositing ferroelectric film, method for preparing the same, and method for preparing a DRAM using the same |
| TW200604362A (en) * | 2004-04-23 | 2006-02-01 | Starck H C Gmbh | Backing plate for sputter targets |
| US7850829B2 (en) * | 2005-01-12 | 2010-12-14 | Tosoh Smd, Inc. | Sputter targets with expansion grooves for reduced separation |
Also Published As
| Publication number | Publication date |
|---|---|
| US20190003036A1 (en) | 2019-01-03 |
| EP3390684B1 (de) | 2020-03-18 |
| AT15050U1 (de) | 2016-11-15 |
| JP7023844B2 (ja) | 2022-02-22 |
| KR102657632B1 (ko) | 2024-04-15 |
| WO2017102069A1 (de) | 2017-06-22 |
| TW201736625A (zh) | 2017-10-16 |
| CN108391438A (zh) | 2018-08-10 |
| KR20180094910A (ko) | 2018-08-24 |
| JP2019502024A (ja) | 2019-01-24 |
| CN108391438B (zh) | 2020-04-14 |
| EP3390684A1 (de) | 2018-10-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1125000B1 (en) | Method of making a sputter target/backing plate assembly | |
| JP5745315B2 (ja) | 積層体および積層体の製造方法 | |
| TWI711710B (zh) | 結構化披覆源 | |
| CN103952660B (zh) | 具有氮化物膜的复合材料及其制法和应用 | |
| US20090045050A1 (en) | Sputtering target structure | |
| WO2005116146B1 (en) | Abrasive composite tools having compositional gradients and associated methods | |
| RU2696910C2 (ru) | Распыляемая мишень | |
| JP6374084B2 (ja) | ターゲット及びターゲット製造方法 | |
| JP2016128599A (ja) | ダイヤモンドライクカーボン層積層体およびその製造方法 | |
| JP3448884B2 (ja) | 人工ダイヤモンド被覆材 | |
| TWI658885B (zh) | 塗佈源及其製造方法 | |
| RU2551331C2 (ru) | Способ получения многослойного градиентного покрытия методом магнетронного напыления | |
| EP2905426A1 (en) | Component with an abradable coating and a method for coating the abradable coating | |
| JP2019502024A5 (enExample) | ||
| KR102737966B1 (ko) | 히터 부재, 히터 부재 형성 방법 및 흡연용 디바이스 | |
| JP6014199B2 (ja) | 積層体の製造方法 | |
| KR20240131594A (ko) | 정전척 및 이의 제조방법 | |
| CN108115109B (zh) | 一种塑性金属陶瓷叠层涂层压铸模具及其制备方法 | |
| TWI427173B (zh) | 再生濺鍍靶材及其製作方法 | |
| JP5620649B2 (ja) | 高硬度耐摩耗性皮膜の形成方法 | |
| EP2902534A1 (en) | Metal coated crucible for sapphire single crystal growth | |
| Steiner et al. | Temperature induced recrystallization of copper coatings deposited on adhesion promoting molybdenum interlayers | |
| JP2008261040A (ja) | 鉄鋼材の表面への硬質溶射皮膜形成方法、硬質溶射皮膜被覆鉄鋼材及び硬質溶射皮膜被覆鉄鋼材を用いた刃物 | |
| JP6311353B2 (ja) | 超硬工具およびその製造方法 | |
| CN118957521A (zh) | 一种超硬耐磨薄膜及其制备方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |