KR102657632B1 - 구조부를 갖는 코팅 소스 - Google Patents
구조부를 갖는 코팅 소스 Download PDFInfo
- Publication number
- KR102657632B1 KR102657632B1 KR1020187017106A KR20187017106A KR102657632B1 KR 102657632 B1 KR102657632 B1 KR 102657632B1 KR 1020187017106 A KR1020187017106 A KR 1020187017106A KR 20187017106 A KR20187017106 A KR 20187017106A KR 102657632 B1 KR102657632 B1 KR 102657632B1
- Authority
- KR
- South Korea
- Prior art keywords
- coating
- coating material
- vapor deposition
- physical vapor
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000576 coating method Methods 0.000 title claims abstract description 349
- 239000011248 coating agent Substances 0.000 title claims abstract description 334
- 239000000463 material Substances 0.000 claims abstract description 220
- 238000005240 physical vapour deposition Methods 0.000 claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 claims abstract description 25
- 238000005219 brazing Methods 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 31
- 238000001816 cooling Methods 0.000 claims description 22
- 229910045601 alloy Inorganic materials 0.000 claims description 13
- 239000000956 alloy Substances 0.000 claims description 13
- 238000003825 pressing Methods 0.000 claims description 11
- 238000005520 cutting process Methods 0.000 claims description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 8
- 238000005422 blasting Methods 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- 239000011733 molybdenum Substances 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 239000010937 tungsten Substances 0.000 claims description 8
- 229910016005 MoSiB Inorganic materials 0.000 claims description 7
- 230000003628 erosive effect Effects 0.000 claims description 4
- 238000000227 grinding Methods 0.000 claims description 4
- 230000035882 stress Effects 0.000 description 30
- 230000015572 biosynthetic process Effects 0.000 description 20
- 239000000203 mixture Substances 0.000 description 7
- 238000005304 joining Methods 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 238000003754 machining Methods 0.000 description 4
- 229910010038 TiAl Inorganic materials 0.000 description 3
- -1 TiNAlN) Chemical compound 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 235000015067 sauces Nutrition 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 238000005477 sputtering target Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000007850 fluorescent dye Substances 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 238000010327 methods by industry Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910019974 CrSi Inorganic materials 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000004901 spalling Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0635—Carbides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/067—Borides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ATGM371/2015 | 2015-12-18 | ||
| ATGM371/2015U AT15050U1 (de) | 2015-12-18 | 2015-12-18 | Beschichtungsquelle mit Strukturierung |
| PCT/EP2016/002059 WO2017102069A1 (de) | 2015-12-18 | 2016-12-07 | Beschichtungsquelle mit strukturierung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20180094910A KR20180094910A (ko) | 2018-08-24 |
| KR102657632B1 true KR102657632B1 (ko) | 2024-04-15 |
Family
ID=57227207
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020187017106A Active KR102657632B1 (ko) | 2015-12-18 | 2016-12-07 | 구조부를 갖는 코팅 소스 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20190003036A1 (enExample) |
| EP (1) | EP3390684B1 (enExample) |
| JP (1) | JP7023844B2 (enExample) |
| KR (1) | KR102657632B1 (enExample) |
| CN (1) | CN108391438B (enExample) |
| AT (1) | AT15050U1 (enExample) |
| TW (1) | TWI711710B (enExample) |
| WO (1) | WO2017102069A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102020115914B4 (de) | 2020-06-17 | 2024-03-07 | Sindlhauser Materials Gmbh | Flächiges Sputtertarget |
| CN113930744B (zh) * | 2021-09-29 | 2023-12-15 | 西北核技术研究所 | 一种具有高发射阈值的梯度涂层及其制备方法 |
| KR20250086259A (ko) | 2023-12-06 | 2025-06-13 | 이유진 | 책상의 기능이 내재되어 있는 캐리어 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61291964A (ja) * | 1985-06-17 | 1986-12-22 | Anelva Corp | スパツタ用樹脂タ−ゲツト |
| JPS62278261A (ja) * | 1986-05-26 | 1987-12-03 | Seiko Epson Corp | スパツタ用タ−ゲツトの製造方法 |
| JPS63216969A (ja) * | 1987-03-05 | 1988-09-09 | Daido Steel Co Ltd | 加工方法 |
| EP0483375B1 (en) * | 1990-05-15 | 1996-03-13 | Kabushiki Kaisha Toshiba | Sputtering target and production thereof |
| JPH05214518A (ja) * | 1992-02-04 | 1993-08-24 | Hitachi Metals Ltd | スパッタリングターゲットとバッキングプレートの接合体の矯正方法およびスパッタリングターゲット材 |
| JPH05230642A (ja) * | 1992-02-21 | 1993-09-07 | Nissin High Voltage Co Ltd | スパッタ・ターゲット |
| JP3460506B2 (ja) * | 1996-11-01 | 2003-10-27 | 三菱マテリアル株式会社 | 高誘電体膜形成用スパッタリングターゲット |
| DE102004020404B4 (de) * | 2004-04-23 | 2007-06-06 | H. C. Starck Gmbh & Co. Kg | Trägerplatte für Sputtertargets, Verfahren zu ihrer Herstellung und Einheit aus Trägerplatte und Sputtertarget |
| CN101378985A (zh) * | 2005-01-12 | 2009-03-04 | 纽约大学 | 利用全息光学镊子处理纳米导线的系统和方法 |
| JP5928237B2 (ja) * | 2012-08-08 | 2016-06-01 | 住友金属鉱山株式会社 | Ｃｕ−Ｇａ合金スパッタリングターゲット及びその製造方法 |
| CN104711525B (zh) * | 2013-12-13 | 2018-01-26 | 吉坤日矿日石金属株式会社 | 溅射靶及其制造方法 |
| KR20180135120A (ko) | 2014-06-27 | 2018-12-19 | 플란제 콤포지트 마테리얼스 게엠베하 | 스퍼터링 타겟 |
-
2015
- 2015-12-18 AT ATGM371/2015U patent/AT15050U1/de unknown
-
2016
- 2016-10-24 TW TW105134281A patent/TWI711710B/zh not_active IP Right Cessation
- 2016-12-07 KR KR1020187017106A patent/KR102657632B1/ko active Active
- 2016-12-07 EP EP16819815.8A patent/EP3390684B1/de active Active
- 2016-12-07 US US16/061,688 patent/US20190003036A1/en not_active Abandoned
- 2016-12-07 WO PCT/EP2016/002059 patent/WO2017102069A1/de not_active Ceased
- 2016-12-07 CN CN201680074480.3A patent/CN108391438B/zh active Active
- 2016-12-07 JP JP2018531419A patent/JP7023844B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2017102069A1 (de) | 2017-06-22 |
| US20190003036A1 (en) | 2019-01-03 |
| JP7023844B2 (ja) | 2022-02-22 |
| JP2019502024A (ja) | 2019-01-24 |
| TW201736625A (zh) | 2017-10-16 |
| CN108391438A (zh) | 2018-08-10 |
| CN108391438B (zh) | 2020-04-14 |
| EP3390684B1 (de) | 2020-03-18 |
| EP3390684A1 (de) | 2018-10-24 |
| AT15050U1 (de) | 2016-11-15 |
| TWI711710B (zh) | 2020-12-01 |
| KR20180094910A (ko) | 2018-08-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20180615 Patent event code: PA01051R01D Comment text: International Patent Application |
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| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20210615 Comment text: Request for Examination of Application |
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| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20230606 Patent event code: PE09021S01D |
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| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20240206 |
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| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20240411 Patent event code: PR07011E01D |
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| PR1002 | Payment of registration fee |
Payment date: 20240411 End annual number: 3 Start annual number: 1 |
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| PG1601 | Publication of registration |