CN108391438B - 结构化涂层源 - Google Patents

结构化涂层源 Download PDF

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Publication number
CN108391438B
CN108391438B CN201680074480.3A CN201680074480A CN108391438B CN 108391438 B CN108391438 B CN 108391438B CN 201680074480 A CN201680074480 A CN 201680074480A CN 108391438 B CN108391438 B CN 108391438B
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CN
China
Prior art keywords
coating material
coating
structuring
source
cracks
Prior art date
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CN201680074480.3A
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English (en)
Chinese (zh)
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CN108391438A (zh
Inventor
皮特·波尔契克
萨宾·沃尔
罗尼·因纳温克勒
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Plansee Composite Materials GmbH
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Plansee Composite Materials GmbH
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Publication date
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Publication of CN108391438A publication Critical patent/CN108391438A/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0635—Carbides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/067—Borides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
CN201680074480.3A 2015-12-18 2016-12-07 结构化涂层源 Active CN108391438B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ATGM371/2015 2015-12-18
ATGM371/2015U AT15050U1 (de) 2015-12-18 2015-12-18 Beschichtungsquelle mit Strukturierung
PCT/EP2016/002059 WO2017102069A1 (de) 2015-12-18 2016-12-07 Beschichtungsquelle mit strukturierung

Publications (2)

Publication Number Publication Date
CN108391438A CN108391438A (zh) 2018-08-10
CN108391438B true CN108391438B (zh) 2020-04-14

Family

ID=57227207

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680074480.3A Active CN108391438B (zh) 2015-12-18 2016-12-07 结构化涂层源

Country Status (8)

Country Link
US (1) US20190003036A1 (enExample)
EP (1) EP3390684B1 (enExample)
JP (1) JP7023844B2 (enExample)
KR (1) KR102657632B1 (enExample)
CN (1) CN108391438B (enExample)
AT (1) AT15050U1 (enExample)
TW (1) TWI711710B (enExample)
WO (1) WO2017102069A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020115914B4 (de) 2020-06-17 2024-03-07 Sindlhauser Materials Gmbh Flächiges Sputtertarget
CN113930744B (zh) * 2021-09-29 2023-12-15 西北核技术研究所 一种具有高发射阈值的梯度涂层及其制备方法
KR20250086259A (ko) 2023-12-06 2025-06-13 이유진 책상의 기능이 내재되어 있는 캐리어

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62278261A (ja) * 1986-05-26 1987-12-03 Seiko Epson Corp スパツタ用タ−ゲツトの製造方法
JPH05230642A (ja) * 1992-02-21 1993-09-07 Nissin High Voltage Co Ltd スパッタ・ターゲット
JP2014034703A (ja) * 2012-08-08 2014-02-24 Sumitomo Metal Mining Co Ltd Ｃｕ−Ｇａ合金スパッタリングターゲット及びその製造方法
CN104711525A (zh) * 2013-12-13 2015-06-17 吉坤日矿日石金属株式会社 溅射靶及其制造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61291964A (ja) * 1985-06-17 1986-12-22 Anelva Corp スパツタ用樹脂タ−ゲツト
JPS63216969A (ja) * 1987-03-05 1988-09-09 Daido Steel Co Ltd 加工方法
EP0483375B1 (en) * 1990-05-15 1996-03-13 Kabushiki Kaisha Toshiba Sputtering target and production thereof
JPH05214518A (ja) * 1992-02-04 1993-08-24 Hitachi Metals Ltd スパッタリングターゲットとバッキングプレートの接合体の矯正方法およびスパッタリングターゲット材
JP3460506B2 (ja) * 1996-11-01 2003-10-27 三菱マテリアル株式会社 高誘電体膜形成用スパッタリングターゲット
DE102004020404B4 (de) * 2004-04-23 2007-06-06 H. C. Starck Gmbh & Co. Kg Trägerplatte für Sputtertargets, Verfahren zu ihrer Herstellung und Einheit aus Trägerplatte und Sputtertarget
EP1851166A2 (en) * 2005-01-12 2007-11-07 New York University System and method for processing nanowires with holographic optical tweezers
CN106471151B (zh) 2014-06-27 2019-06-18 攀时复合材料有限公司 溅镀靶

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62278261A (ja) * 1986-05-26 1987-12-03 Seiko Epson Corp スパツタ用タ−ゲツトの製造方法
JPH05230642A (ja) * 1992-02-21 1993-09-07 Nissin High Voltage Co Ltd スパッタ・ターゲット
JP2014034703A (ja) * 2012-08-08 2014-02-24 Sumitomo Metal Mining Co Ltd Ｃｕ−Ｇａ合金スパッタリングターゲット及びその製造方法
CN104711525A (zh) * 2013-12-13 2015-06-17 吉坤日矿日石金属株式会社 溅射靶及其制造方法

Also Published As

Publication number Publication date
US20190003036A1 (en) 2019-01-03
EP3390684B1 (de) 2020-03-18
AT15050U1 (de) 2016-11-15
JP7023844B2 (ja) 2022-02-22
TWI711710B (zh) 2020-12-01
KR102657632B1 (ko) 2024-04-15
WO2017102069A1 (de) 2017-06-22
TW201736625A (zh) 2017-10-16
CN108391438A (zh) 2018-08-10
KR20180094910A (ko) 2018-08-24
JP2019502024A (ja) 2019-01-24
EP3390684A1 (de) 2018-10-24

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