TWI529826B - Method and Structure of Ternary Wafer Bonding - Google Patents

Method and Structure of Ternary Wafer Bonding Download PDF

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Publication number
TWI529826B
TWI529826B TW103113357A TW103113357A TWI529826B TW I529826 B TWI529826 B TW I529826B TW 103113357 A TW103113357 A TW 103113357A TW 103113357 A TW103113357 A TW 103113357A TW I529826 B TWI529826 B TW I529826B
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Taiwan
Prior art keywords
bonding
wafer
bonding layer
layer
ternary
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TW103113357A
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TW201539594A (zh
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zheng-yu Liu
Yi-Jin Lin
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Univ Nat Central
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Priority to TW103113357A priority Critical patent/TWI529826B/zh
Priority to US14/487,330 priority patent/US20150294950A1/en
Publication of TW201539594A publication Critical patent/TW201539594A/zh
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Publication of TWI529826B publication Critical patent/TWI529826B/zh

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Description

三元晶圓鍵合之方法及其結構 【0001】
本發明係關於一種晶圓鍵合之方法及其結構，尤一種透過島狀鍵結層之設計，而於250℃之低溫形成金－銀－矽鍵結、完成金－矽鍵合之三元晶圓鍵合之方法及其結構。
 【0002】
早期的電子元件製作若要整合各種材料，可藉由異質磊晶技術，或是於積體電路製程中使用離子植入技術來完成。而異質磊晶技術所遇到的最大問題為晶格匹配之限制，時常因晶格匹配不滿足而無法得高品質之磊晶結構，進而影響元件之功能。此外，若以異質磊晶技術進行磊晶成長，亦無法有效且經濟地成長厚度大於10微米之磊晶結構。
【0003】
近年來，有一種整合各種材料特性之技術已逐步發展，此種技術可將晶格不匹配的材料利用晶圓鍵合與去除晶圓的技術來完成，此即為晶圓鍵合技術(wafer bonding technique)。晶圓鍵合技術是指將兩晶圓接合後，藉由外加能量使得接合界面的原子產生反應，形成共價鍵而結合成一體，並使接合介面達到特定的鍵合強度。
【0004】
在晶圓鍵合的領域中，低溫鍵合技術係為其中受到廣泛研究以及應用的一個重點項目。此低溫鍵合係考量到異質材料鍵合會因熱膨脹係數差，在加溫及冷卻過程中產生劇烈的熱應力影響，使鍵合元件產生殘留應力(Residual Stress)，導致所鍵合的矽晶圓有破裂、翹曲及良率降低等問題，而且積體電路也有其接合溫度限制，高溫將導致線路及結晶結構破壞，故低溫鍵合技術有其產業上應用之吸引力存在。
【0005】
目前在操作低溫鍵合時，有一種方法是在兩個矽晶圓的表面塗佈一層低熔點的介質，以較低退火溫度達到所需的鍵合強度。例如在矽晶圓上蒸鍍一層薄金層，而其中金、矽之共晶溫度約為380℃，因此當加熱到此溫度時會產生矽金合金，使接觸介面融為一體，故可達成鍵合的目的。不過這種方法的熱處理溫度仍然有進一步的降低空間。
【0006】
中華民國專利公開號TW 200839857曾揭示了一種金/銀擴散低溫晶圓鍵結之方法，其係先分別選擇一第一晶圓及第二晶圓，然後依序蒸鍍金、銀等金屬薄膜於該第一晶圓及第二晶圓上，再以超音波震盪器進行清洗，然後再分別將鍍好金屬薄膜之第一晶圓及第二晶圓置入熔爐中，以100~300℃之低溫進行鍵結製程，利用金/銀介面間可快速擴散而達成低溫晶圓鍵結。然而，此種方法雖然可在100~300℃之低溫中進行，能夠避免不同基材因熱膨脹係數之不同所造成之熱應力問題，但在方法上仍有改進之空間，因為其需要分別對兩個預備進行鍵合之矽晶圓做表面鍍膜之處理。
【0007】
美國專利公開號US 20040262772則揭示了另一種使用金屬夾層達成晶圓鍵合之方法，其係在兩個矽晶圓之間設置了介電質膜層之後，再分別設置表面包覆有金薄膜或銀薄膜之鋁、鎢、金或銀等金屬塊於此介電質膜層之上，然後再以此些金屬塊於300℃以下做鍵結。此種方法雖然也可達到300℃以下之低溫鍵結，但其結構及方法之設計異常繁複，須於兩個矽晶圓之表面各別製作相關結構後，再對準進行鍵結，並不利於產業之實際應用。
【0008】
因此，如何兼顧到實用之可能性以及在降低成本之餘兼顧到產品之品質，以在低溫下便利地讓兩個矽晶圓能夠形成良好的鍵合，即是本發明所揭示之三元晶圓鍵合之方法及其結構所要克服的實務問題。
 【0009】
本發明之主要目的，係提供一種三元晶圓鍵合之方法，其係在單一矽晶圓之表面上形成金－銀之組合結構，而讓另一個表面不具有任何金屬膜層之矽晶圓與之發生晶圓鍵合，讓金－矽鍵合由習知技術所需的約380℃降低至250℃。
【0010】
本發明之次要目的，係提供一種三元晶圓鍵合之方法，其只要在250℃之低溫進行熱處理，即可完成晶圓鍵合，因此可避免高溫鍵合受到應力因素的影響，排除矽晶圓有破裂、翹曲及良率降低等問題發生之可能。
【0011】
本發明之另一目的，係提供一種三元晶圓鍵合之方法，其在設置以金為材質之鍵結層於矽晶圓上之後，再將經過圖案化而呈島狀結構之另一個、以銀為材質之鍵結層設置於其上，以建構金－銀－矽三元鍵結之結構基礎，其方法較習知技術易於處理，且鍵合品質良好。
【0012】
本發明之再一目的，係提供一種三元晶圓鍵合之結構，其利用特殊的銀質鍵結層與金質鍵結層良好地搭配，讓矽晶圓可以在經過250℃之溫度熱處理後，實現金－矽在低溫完成鍵合的目標。
【0013】
為了達到上述之目的，本發明揭示了一種三元晶圓鍵合之方法及其結構，其在步驟上係包含：蒸鍍一第一鍵結層於一第一矽晶圓上；設置一第二鍵結層於該第一鍵結層之上，且該第二鍵結層係為複數個島式結構散布於該第一鍵結層之上並暴露部分之該第一鍵結層；設置一第二矽晶圓於該第二鍵結層之上；以及進行熱處理，使該第二矽晶圓與該第一鍵結層以及該第二件鍵結層產生三元鍵結。依此方法之操作，即可讓金－矽鍵合的所需溫度能被有效地降低。
1‧‧‧第一矽晶圓
2‧‧‧第一鍵結層
3‧‧‧第二鍵結層
31‧‧‧島式結構
32‧‧‧間隔
4‧‧‧第二矽晶圓
5‧‧‧黏著層
6‧‧‧阻障層
A‧‧‧間隔寬度
B‧‧‧直徑長度
C‧‧‧高度
【0014】
第一圖：其係為本發明之步驟流程圖；
第二圖：其係為本發明一較佳實施例於操作過程中的結構示意圖；
第三圖：其係為本發明一較佳實施例之側視結構示意圖；
第四圖：其係為本發明於完成晶圓鍵合時之結構剖視示意圖；以及
第五圖：其係為本發明於實驗驗證時之電子顯微鏡照片。
 【0015】
為使本發明之特徵及所達成之功效有更進一步之瞭解與認識，謹佐以較佳之實施例及配合詳細之說明，說明如後：
【0016】
首先，請參考第一圖，其係揭示了本發明在方法上的步驟流程示意，其係包含了：
步驟S1：蒸鍍一第一鍵結層於一第一矽晶圓上；
步驟S2：設置一第二鍵結層於該第一鍵結層之上，且該第二鍵結層係為複數個島式結構散布於該第一鍵結層之上並暴露部分之該第一鍵結層；
步驟S3：設置一第二矽晶圓於該第二鍵結層之上；以及
步驟S4：進行熱處理，使該第二矽晶圓與該第一鍵結層以及該第二件鍵結層產生三元鍵結。
【0017】
透過上述步驟之操作，本發明在鍵合晶圓時，可於250℃之環境溫度下完成鍵結層與矽晶圓之鍵結，係為此技術領域中較低之操作溫度，可避免在800~1000℃之熱處理程序下，因為異質材料在鍵合時受到熱膨脹係數差之先天限制，使其在加溫及冷卻過程中產生劇烈的熱應力影響，使鍵合元件產生殘留應力，導致矽晶圓可能有破裂、翹曲及良率降低等問題發生。另外，過往要產生金－矽鍵結，其熱處理溫度至少為380℃以上，而透過本發明所揭示的步驟，讓銀參與鍵合時，可有效降低金－矽鍵結所需的溫度至250℃。
【0018】
請一併參考第二圖，其係為本發明在操作過程中的結構示意圖；本發明係先蒸鍍第一鍵結層2於第一矽晶圓1之上，此第一鍵結層2之材質係為金，是與矽晶圓形成鍵結的材料之一。而為了提高晶圓鍵合的品質，在蒸鍍第一鍵結層2於第一矽晶圓1之上之前，會先在第一矽晶圓1的表面上依序蒸鍍黏著層5以及阻障層6。黏著層5之材質係為鉻，而阻障層6之材質則可選用鉑，皆為通常之結構設計。
【0019】
本發明之關鍵技術特徵在於步驟S2所揭示之設置第二鍵結層3於第一鍵結層2之上，此第二鍵結層3的材質係為銀，但其並非如第一鍵結層2、黏著層5或是阻障層6為金屬薄膜，而是在圖案化的設置之下，以島式結構31的態樣散布於第一鍵結層2之上，並且因此暴露出部分的第一鍵結層2，並非完全遮蔽住第一鍵結層2，使三元鍵結之基本條件得以具備。
【0020】
而除了圖案化的第二鍵結層3暴露部分之第一鍵結層2以外，本發明在控制第二鍵結層3的圖案結構亦有其比例控制。請參考第三圖之側視示意，本發明在島式結構31之間的間隔32之間隔寬度A，以及島式結構31本身的直徑長度B與高度C都有其較佳的比例控制，以確保晶圓鍵合的品質係符合產業利用之需求。
【0021】
在此結構之比例上，本發明係控制島式結構31之直徑長度B與高度C之比值介於900~1300，而島式結構31之直徑長度B與間隔32之間隔寬度A之比值則是介於4.75~4.50。下表一係為本發明於實際操作之數據：
(表一)
【0022】
而除了上述之結構比例控制之外，第一鍵結層2、黏著層5以及阻障層6之厚度則分別係蒸鍍為1微米厚，位於該些膜層之下的第一矽晶圓1的厚度則是約380微米。
【0023】
形成銀材質之島狀結構31的第二鍵結層3於第一鍵結層2之後，接著就可將預備與第一矽晶圓1接合的第二矽晶圓4設置於第二鍵結層3之上。此第二矽晶圓4之表面已先以王水清洗過，清除可能附著於表面的物質而確保鍵合的效果。於此，本發明所使用進行接合的第二矽晶圓4除了表面清洗之外，並不需要做額外的任何鍍膜處理，所有的膜層設置只要在第一矽晶圓1的表面完成即可，在晶圓鍵合的程序上有顯著的流程簡化優點。
【0024】
最後在步驟S4之熱處理中，第二矽晶圓4就會同時與第一鍵結層2以及第二件鍵結層3產生三元鍵結，也就是金－銀－矽之三元鍵結結構。此熱處理過程不需要使用過高的溫度，只要使用真空加熱爐，加熱至250℃之溫度處理3個小時，即可完成第一矽晶圓1與第二矽晶圓4之接合。此溫度係低於金－矽之共晶點380℃，其係因為使用了銀作為三元鍵結之構成要件，使金－矽之共晶點降低，因此熱處理的溫度得以降低至250℃即可。請參考第四圖，其係為第一矽晶圓1與第二矽晶圓4在晶圓鍵合後之結構示意，此時第一矽晶圓1與第二矽晶圓4即在原本位於第一矽晶圓1之上的第一鍵結層2以及第二件鍵結層3與第二矽晶圓2的表面產生鍵結之下，穩定且緊密的結合為一。
【0025】
第五圖係為本發明在經過250℃之熱處理後，使用王水移除第一矽晶圓1上所覆蓋的鉻、鉑、金、銀等金屬層或島狀結構後，所拍攝的電子顯微鏡圖，可觀察到矽晶圓的表面存在著到金字塔結構的蝕孔(etch pit)痕跡，可證明金－銀－矽三元鍵結系統在250℃之低溫熱處理下會發生反應，故可以上述之金－銀之組合結構設計以及操作方法，實現金－矽鍵結在250℃的熱處理條件下完成鍵合的目的。
【0026】
綜上所述，本發明詳細揭示了一種三元晶圓鍵合之方法及其結構以及其結構，其僅在單一矽晶圓之表面上讓金屬銀以島狀結構散布於金薄膜之上，形成金－銀之組合結構，而讓另一個表面不具有任何金屬膜層之矽晶圓與之發生晶圓鍵合，大幅簡化了晶圓鍵合的程序；且其利用金屬銀的參與而降低了金－矽之共晶點，於250℃之低溫進行熱處理即完成晶圓鍵合，排除了晶圓鍵合受應力而影響品質的問題。在兼顧到晶圓鍵合的成本、溫度、時間以及成品品質之下，總結而言，本發明無疑提供了充分展現實用與經濟價值之一種三元晶圓鍵合之方法及其結構。
【0027】
惟以上所述者，僅為本發明之較佳實施例而已，並非用來限定本發明實施之範圍，舉凡依本發明申請專利範圍所述之形狀、構造、特徵及精神所為之均等變化與修飾，均應包括於本發明之申請專利範圍內。
1‧‧‧第一矽晶圓
2‧‧‧第一鍵結層
3‧‧‧第二鍵結層
31‧‧‧島式結構
4‧‧‧第二矽晶圓
5‧‧‧黏著層
6‧‧‧阻障層

Claims (16)

  1. 【第01項】
    一種三元晶圓鍵合之方法，其步驟係包含：
    蒸鍍一第一鍵結層於一第一矽晶圓上；
    設置一第二鍵結層於該第一鍵結層之上，且該第二鍵結層係為複數個島式結構散布於該第一鍵結層之上並暴露部分之該第一鍵結層；
    設置一第二矽晶圓於該第二鍵結層之上；以及
    進行熱處理，使該第二矽晶圓與該第一鍵結層以及該第二件鍵結層產生三元鍵結；
    其中，該第一鍵結層之材質係為金，該第二鍵結層之材質係為銀。
  2. 【第02項】
    如申請專利範圍第1項所述之三元晶圓鍵合之方法，其中該些島式結構之直徑長度與高度之比值係介於900~1300。
  3. 【第03項】
    如申請專利範圍第2項所述之三元晶圓鍵合之方法，其中該些島式結構之間分別具有一間隔，且該些島式結構之直徑長度與該些間隔之間隔寬度之比值係介於4.75~4.50。
  4. 【第04項】
    如申請專利範圍第3項所述之三元晶圓鍵合之方法，其中該些島式結構之直徑長度係介於900~950微米。
  5. 【第05項】
    如申請專利範圍第1項所述之三元晶圓鍵合之方法，其中於蒸鍍該第一鍵結層於該第一矽晶圓上之步驟之前，更包含步驟：
    蒸鍍一黏著層於該第一矽晶圓之上；以及
    蒸鍍一阻障層於該黏著層之上。
  6. 【第06項】
    如申請專利範圍第5項所述之三元晶圓鍵合之方法，其中該黏著層之材質係為鉻(Cr)。
  7. 【第07項】
    如申請專利範圍第5項所述之三元晶圓鍵合之方法，其中該阻障層之材質係為鉑(Pt)。
  8. 【第08項】
    如申請專利範圍第1項所述之三元晶圓鍵合之方法，其中於進行熱處理之步驟中，熱處理之溫度係為250℃。
  9. 【第09項】
    如申請專利範圍第1項所述之三元晶圓鍵合之方法，其中於進行熱處理之步驟中，熱處理之時間係為3小時。
  10. 【第10項】
    如申請專利範圍第1項所述之三元晶圓鍵合之方法，其中設置一第二矽晶圓於該第二鍵結層之上之步驟之前，更包含步驟：
    使用王水清洗該第二矽晶圓之表面。
  11. 【第11項】
    一種三元晶圓鍵合之結構，其係包含：
    一第一矽晶圓；
    一第一鍵結層，設置於該一第一矽晶圓之上；
    一第二鍵結層，設置於該第一鍵結層之上，且該第二鍵結層係為複數個島式結構散布於該第一鍵結層之上並暴露部分之該第一鍵結層；以及
    一第二矽晶圓，係經熱處理而鍵合於該第一鍵結層以及該第二鍵結層之上；
    其中，該第一鍵結層之材質係為金，該第二鍵結層之材質係為銀。
  12. 【第12項】
    如申請專利範圍第11項所述之三元晶圓鍵合之結構，其中該些島式結構之直徑長度與高度之比值係介於900~1300。
  13. 【第13項】
    如申請專利範圍第12項所述之三元晶圓鍵合之結構，其中該些島式結構之間分別具有一間隔，且該些島式結構之直徑長度與該些間隔之間隔寬度之比值係介於4.75~4.50。
  14. 【第14項】
    如申請專利範圍第13項所述之三元晶圓鍵合之結構，其中該些島式結構之直徑長度係介於900~950微米。
  15. 【第15項】
    如申請專利範圍第11項所述之三元晶圓鍵合之結構，其中該第一矽晶圓以及該第一鍵結層之間，由下至上更依序包含一黏著層以及一阻障層。
  16. 【第16項】
    如申請專利範圍第15項所述之三元晶圓鍵合之結構，其中該黏著層之材質係為鉻，且該阻障層之材質係為鉑。
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