WO2017065255A1 - 走査アンテナおよびその製造方法 - Google Patents
走査アンテナおよびその製造方法 Download PDFInfo
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- WO2017065255A1 WO2017065255A1 PCT/JP2016/080482 JP2016080482W WO2017065255A1 WO 2017065255 A1 WO2017065255 A1 WO 2017065255A1 JP 2016080482 W JP2016080482 W JP 2016080482W WO 2017065255 A1 WO2017065255 A1 WO 2017065255A1
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- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
- H01Q21/06—Arrays of individually energised antenna units similarly polarised and spaced apart
- H01Q21/20—Arrays of individually energised antenna units similarly polarised and spaced apart the units being spaced along or adjacent to a curvilinear path
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
- H01Q21/24—Combinations of antenna units polarised in different directions for transmitting or receiving circularly and elliptically polarised waves or waves linearly polarised in any direction
Abstract
Description
液晶材料の大きな誘電率M(εM)の異方性(複屈折率)を利用したアンテナ単位を用いた走査アンテナは、LCDパネルの画素に対応付けられるアンテナ単位の各液晶層に印加する電圧を制御し、各アンテナ単位の液晶層の実効的な誘電率M(εM)を変化させることによって、静電容量の異なるアンテナ単位で2次元的なパターンを形成する(LCDによる画像の表示に対応する。)。アンテナから出射される、または、アンテナによって受信される電磁波(例えば、マイクロ波)には、各アンテナ単位の静電容量に応じた位相差が与えられ、静電容量の異なるアンテナ単位によって形成された2次元的なパターンに応じて、特定の方向に強い指向性を有することになる(ビーム走査)。例えば、アンテナから出射される電磁波は、入力電磁波が各アンテナ単位に入射し、各アンテナ単位で散乱された結果得られる球面波を、各アンテナ単位によって与えられる位相差を考慮して積分することによって得られる。各アンテナ単位が、「フェイズシフター:phase shifter」として機能していると考えることもできる。液晶材料を用いた走査アンテナの基本的な構造および動作原理については、特許文献1~4および非特許文献1、2を参照されたい。非特許文献2は、らせん状のスロットが配列された走査アンテナの基本的な構造を開示している。参考のために、特許文献1~4および非特許文献1、2の開示内容の全てを本明細書に援用する。
まず、図1および図2を参照する。図1は詳述した様に走査アンテナ1000の中心付近の模式的な部分断面図であり、図2(a)および(b)は、それぞれ、走査アンテナ1000におけるTFT基板101およびスロット基板201を示す模式的な平面図である。
・アンテナ単位領域U
図3(a)および(b)は、それぞれ、TFT基板101のアンテナ単位領域Uを模式的に示す断面図および平面図である。
図4(a)~(c)は、それぞれ、ゲート端子部GT、ソース端子部STおよびトランスファー端子部PTを模式的に示す断面図である。
TFT基板101は、例えば以下の方法で製造され得る。図5は、TFT基板101の製造工程を例示する図である。
次いで、スロット基板201の構造をより具体的に説明する。
図7は、TFT基板101のトランスファー端子部PTと、スロット基板201の端子部ITとを接続するトランスファー部を説明するための模式的な断面図である。図7では、図1~図4と同様の構成要素には同じ参照符号を付している。
スロット基板201は、例えば以下の方法で製造され得る。
本実施形態では、各画素に配置されるスイッチング素子として、半導体層5を活性層とするTFTが用いられる。半導体層5はアモルファスシリコン層に限定されず、ポリシリコン層、酸化物半導体層であってもよい。
図面を参照しながら、第2の実施形態の走査アンテナを説明する。本実施形態の走査アンテナにおけるTFT基板は、各端子部の上部接続部となる透明導電層が、TFT基板における第1絶縁層と第2絶縁層との間に設けられている点で、図2に示すTFT基板101と異なる。
TFT基板102は、例えば次のような方法で製造される。図9は、TFT基板102の製造工程を例示する図である。なお、以下では、各層の材料、厚さ、形成方法などが、前述したTFT基板101と同様である場合には説明を省略する。
図面を参照しながら、第3の実施形態の走査アンテナを説明する。本実施形態の走査アンテナにおけるTFT基板は、透明導電膜からなる上部接続部をトランスファー端子部に設けない点で、図8に示すTFT基板102と異なる。
TFT基板103は、例えば次のような方法で製造される。図11は、TFT基板103の製造工程を例示する図である。なお、以下では、各層の材料、厚さ、形成方法などが、前述したTFT基板101と同様である場合には説明を省略する。
図12は、本実施形態における、TFT基板103のトランスファー端子部PTと、スロット基板203の端子部ITとを接続するトランスファー部を説明するための模式的な断面図である。図12では、前述の実施形態と同様の構成要素には同じ参照符号を付している。
スロット基板203は、次のようにして製造される。各層の材料、厚さおよび形成方法は、スロット基板201と同様であるので、説明を省略する。
上述したように、アンテナのアンテナ単位に用いられる液晶材料の誘電異方性ΔεMは大きいことが好ましい。しかしながら、誘電異方性ΔεMが大きい液晶材料(ネマチック液晶)の粘度は大きく、応答速度が遅いという問題がある。特に、温度が低下すると、粘度は上昇する。移動体(例えば、船舶、航空機、自動車)に搭載された走査アンテナの環境温度は変動する。したがって、液晶材料の温度をある程度以上、例えば30℃以上、あるいは45℃以上に調整できることが好ましい。設定温度は、ネマチック液晶材料の粘度が概ね10cP(センチポアズ)以下となるように設定することが好ましい。
本発明の実施形態による走査アンテナが有するアンテナ単位のアレイは、LCDパネルと類似した構造を有しているので、LCDパネルと同様に線順次駆動を行う。しかしながら、従来のLCDパネルの駆動方法を適用すると、以下の問題が発生する恐れがある。図16に示す、走査アンテナの1つのアンテナ単位の等価回路図を参照しつつ、走査アンテナに発生し得る問題点を説明する。
本発明の実施形態の走査アンテナにおいて、アンテナ単位は例えば、同心円状に配列される。
図20から図25を参照して、タイリング構造を有する走査アンテナの構造を説明する。
次に、図26~図28を参照して、シール構造の好ましい改変例を説明する。ここで、タイリング構造を有する走査アンテナを例に説明するが、以下で説明するシール構造は、例示するタイリング構造に限られず、TFT基板とスロット基板との間に液晶層を有する走査アンテナに広く適用できる。
2 :下地絶縁膜
3 :ゲート電極
4 :ゲート絶縁層
5 :半導体層
6D :ドレインコンタクト層
6S :ソースコンタクト層
7D :ドレイン電極
7S :ソース電極
7p :ソース接続配線
11 :第1絶縁層
14 :透明導電層
14a :つなぎ替え部透明導電層
14b、14b' :ブリッジ配線
14c、14c' :端子部透明導電層
15 :パッチ電極
15p :パッチ接続部
17 :第2絶縁層
18g、18s、18p :開口部
19g :ゲート端子用上部接続部
19p :トランスファー端子用上部接続部
19s :ソース端子用上部接続部
21 :アライメントマーク
23 :保護導電層
51 :誘電体基板
52 :第3絶縁層
54 :誘電体層(空気層)
55 :スロット電極
55L :下層
55M :主層
55U :上層
55c :コンタクト面
57 :スロット
58 :第4絶縁層
60 :上部接続部
65 :反射導電板
68 :ヒーター用抵抗膜
70 :給電装置
71 :導電性ビーズ
72 :給電ピン
73 :シール部
101、102、103 :TFT基板
201、203 :スロット基板
1000 :走査アンテナ
CH1、CH2、CH3、CH4、CH5、CH6 :コンタクトホール
GD :ゲートドライバ
GL :ゲートバスライン
GT :ゲート端子部
SD :ソースドライバ
SL :ソースバスライン
ST :ソース端子部
PT :トランスファー端子部
IT :端子部
LC :液晶層
R1 :送受信領域
R2 :非送受信領域
Rs :シール領域
TR :端子領域
U :アンテナ単位、アンテナ単位領域
Claims (3)
- 複数のアンテナ単位が配列された走査アンテナであって、
第1誘電体基板と、前記第1誘電体基板に支持された複数のTFTと、複数のゲートバスラインと、複数のソースバスラインと、複数のパッチ電極とを有するTFT基板と、
第2誘電体基板と、前記第2誘電体基板の第1主面上に形成されたスロット電極とを有するスロット基板と、
前記TFT基板と前記スロット基板との間に設けられた液晶層と、
前記液晶層を包囲するシール部と、
前記第2誘電体基板の前記第1主面と反対側の第2主面に誘電体層を介して対向するように配置された反射導電板とを有し、
前記TFT基板は、前記シール部の外側に端子領域を有し、前記複数のゲートバスラインまたは前記複数のソースバスラインと、前記端子領域に形成された複数のゲート端子部または複数のソース端子部との接続は、前記シール部と前記TFT基板との間に設けられた透明導電層を介して行われている、走査アンテナ。 - 前記複数のゲート端子部および前記複数のソース端子部は、それぞれ上部接続部を有し、前記透明導電層は、前記上部接続部と同じ透明導電膜から形成されている、請求項1に記載の走査アンテナ。
- 請求項1または2に記載の走査アンテナの製造方法であって、
前記シール部を形成する工程は、前記TFT基板と前記スロット基板と間に、光硬化性樹脂を含むシール材を所定のパターンで配置する工程と、
前記TFT基板を介して、前記シール材に光を照射する工程と
を包含する走査アンテナの製造方法。
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Also Published As
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CN107431275A (zh) | 2017-12-01 |
JPWO2017065255A1 (ja) | 2017-10-12 |
US20180138594A1 (en) | 2018-05-17 |
JP6139044B1 (ja) | 2017-05-31 |
CN107431275B (zh) | 2018-11-09 |
US10153550B2 (en) | 2018-12-11 |
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