WO2017057727A1 - 基板処理装置及び基板処理方法 - Google Patents

基板処理装置及び基板処理方法 Download PDF

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Publication number
WO2017057727A1
WO2017057727A1 PCT/JP2016/079113 JP2016079113W WO2017057727A1 WO 2017057727 A1 WO2017057727 A1 WO 2017057727A1 JP 2016079113 W JP2016079113 W JP 2016079113W WO 2017057727 A1 WO2017057727 A1 WO 2017057727A1
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WO
WIPO (PCT)
Prior art keywords
phosphoric acid
aqueous solution
acid aqueous
supply pipe
silica additive
Prior art date
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PCT/JP2016/079113
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English (en)
French (fr)
Japanese (ja)
Inventor
邦浩 宮崎
古矢　正明
林　航之介
克弘 山崎
裕樹 齊藤
長樹 古川
Original Assignee
芝浦メカトロニクス株式会社
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Application filed by 芝浦メカトロニクス株式会社 filed Critical 芝浦メカトロニクス株式会社
Priority to CN201680058403.9A priority Critical patent/CN108140572B/zh
Priority to JP2017543643A priority patent/JP6935330B2/ja
Priority to KR1020187007628A priority patent/KR101962080B1/ko
Publication of WO2017057727A1 publication Critical patent/WO2017057727A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like

Definitions

  • the present invention relates to a substrate processing apparatus and a substrate processing method.
  • a substrate processing apparatus used in a wet etching process of electronic components such as a semiconductor device and a liquid crystal display device is known (for example, Japanese Patent Publication No. 2014-209581).
  • the substrate processing apparatus selectively etches a nitride film and an oxide film on a semiconductor substrate.
  • a nitride film for example, SiN film
  • an oxide film for example, SiO 2
  • Etching is performed using a chemical such as (H 3 PO 4 ).
  • H 3 PO 4 a chemical such as (H 3 PO 4 ).
  • the film itself becomes a thin film, so that it is necessary to increase the selectivity between the etching target film and the etching stop film. If this selective ratio is not sufficiently obtained, the etching stop film is eliminated in the etching process, and the underlying film is etched, which hinders device manufacturing.
  • a method using a silica additive is known as a method for increasing the silica concentration in phosphoric acid.
  • the silica additive when the silica additive is added to a high-temperature phosphoric acid aqueous solution in a concentrated state, the silica additive aggregates in the middle of the pipe, and in this case, a predetermined amount of silica cannot be added to the phosphoric acid aqueous solution.
  • the selection ratio of the etching target film is not stable. That is, it is difficult to perform substrate processing with an appropriate silica concentration. This problem is not limited to etching processes, but can occur in processes using silica additives.
  • an object of the embodiment of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of executing substrate processing at an appropriate silica concentration even when processing is performed using a silica additive.
  • the substrate processing apparatus which concerns on embodiment of this invention is a substrate processing apparatus which processes the board
  • the phosphoric acid aqueous solution storage part which stores phosphoric acid aqueous solution
  • the said phosphoric acid aqueous solution storage A phosphoric acid aqueous solution supply part for supplying a phosphoric acid aqueous solution to the part via a phosphoric acid aqueous solution supply pipe, and a silica additive supply part for supplying a silica additive to the phosphoric acid aqueous solution storage part via a silica additive supply pipe;
  • a water supply unit that supplies water to the phosphoric acid aqueous solution storage unit via a water supply pipe; and a processing unit that processes the substrate with the phosphoric acid aqueous solution stored in the phosphoric acid aqueous solution storage unit.
  • the silica additive supply pipe is connected in the middle of the water supply pipe.
  • the substrate processing apparatus which concerns on embodiment of this invention is a substrate processing apparatus which processes the board
  • the phosphoric acid aqueous solution storage part which stores phosphoric acid aqueous solution
  • the said phosphoric acid aqueous solution storage A phosphoric acid aqueous solution supply part for supplying a phosphoric acid aqueous solution to the part via a phosphoric acid aqueous solution supply pipe, and a silica additive supply part for supplying a silica additive to the phosphoric acid aqueous solution storage part via a silica additive supply pipe;
  • a water supply unit that supplies water to the phosphoric acid aqueous solution storage unit via a water supply pipe; and a processing unit that processes the substrate with the phosphoric acid aqueous solution stored in the phosphoric acid aqueous solution storage unit.
  • the silica additive supply pipe and the phosphoric acid aqueous solution supply pipe are respectively
  • a substrate processing method is a substrate processing method for processing a substrate on which at least a nitride film and an oxide film are formed.
  • a step of supplying a phosphoric acid aqueous solution through the step a step of supplying water to the phosphoric acid aqueous solution storage unit through a water supply piping, and a silica additive supply piping connected to the water supply piping.
  • FIG. 1 is an explanatory view schematically showing a substrate processing apparatus according to the first embodiment of the present invention.
  • FIG. 2 is an explanatory diagram showing the supply timing of pure water, phosphoric acid aqueous solution, and silica additive in the substrate processing apparatus.
  • FIG. 3 is an explanatory view schematically showing a substrate processing apparatus according to the second embodiment of the present invention.
  • FIG. 4 is an explanatory view schematically showing a substrate processing apparatus according to the third embodiment of the present invention.
  • FIG. 1 is an explanatory view schematically showing a substrate processing apparatus according to a first embodiment of the present invention.
  • FIG. 2 is an explanatory diagram showing the supply timing of pure water, phosphoric acid aqueous solution, and silica additive in the substrate processing apparatus.
  • W indicates a substrate such as a semiconductor wafer to be subjected to chemical treatment, and on its surface, a nitride film (for example, SiN film) as an etching target film and an oxide film as an etching stop film are formed. (For example, SiO 2 film) is laminated.
  • the substrate processing apparatus 10 is an example of a wet etching apparatus.
  • the substrate processing apparatus 10 includes a heating storage unit 20 that stores and heats a phosphoric acid aqueous solution, a supply unit 30 that supplies water, a phosphoric acid aqueous solution, and a silica additive to the heating storage unit 20,
  • the buffer unit 40 that temporarily stores the heated phosphoric acid aqueous solution, the reheating unit 50 that reheats the recovered phosphoric acid aqueous solution, the processing unit 60 that performs wet etching on the substrate W, and the processing unit 60 remain.
  • the recovery unit 70 that recovers the phosphoric acid aqueous solution and the control unit 100 that controls these units in a coordinated manner are provided.
  • the heating storage unit 20 is provided in the tank 21 for storing the phosphoric acid aqueous solution having a predetermined silica concentration, the heater 22 for heating the phosphoric acid aqueous solution in the tank 21, and the phosphorus stored in the tank 21.
  • the illustrated stirring device is provided.
  • the tank 21 is an open tank that stores an aqueous phosphoric acid solution.
  • the tank 21 is made of a material such as fluorine-based resin or quartz.
  • the silica concentration detection unit 23, the phosphoric acid concentration detection unit 25, and the liquid level detection unit 26 are connected to the control unit 100, and the control unit controls the detected silica concentration, phosphoric acid concentration, and liquid level height of the phosphoric acid aqueous solution, respectively. Output to 100.
  • the tank 21 is connected to a tank 41 described later via a supply pipe 24.
  • An on-off valve 24 a is provided in the middle of the supply pipe 24.
  • the supply unit 30 includes a water supply unit 31, a silica additive supply unit 32, and a phosphoric acid aqueous solution supply unit 33.
  • the water supply unit 31 includes a water supply pipe 31a for supplying water (pure water) to the tank 21 from the outside, and an on-off valve 31b provided in the middle of the water supply pipe 31a.
  • the silica additive supply unit 32 includes a tank 32a for storing the silica additive, a silica additive supply pipe 32b for supplying the silica additive stored in the tank 32a to the tank 21, and the silica additive supply pipe 32b.
  • a pump 32c and an on-off valve 32d provided in the middle are provided.
  • As the silica additive for example, liquid colloidal silica used in an abrasive or the like is used.
  • the silica additive supply pipe 32b is connected to the middle of the water supply pipe 31a at the junction A. Therefore, in the present embodiment, in the water supply pipe 31a, the part from the junction A to the discharge port of the water supply pipe 31a is referred to as a junction pipe 34.
  • One end of the joining pipe 34 enters the tank 21 from the upper part of the tank 21. Therefore, pure water can be supplied to the tank 21 from the water supply pipe 31 a via the junction pipe 34. Further, the silica additive can be supplied to the tank 21 from the silica additive supply pipe 32 b via the junction pipe 34.
  • the phosphoric acid aqueous solution supply unit 33 includes a phosphoric acid aqueous solution supply pipe 33a for supplying a phosphoric acid aqueous solution to the tank 21 from the outside, and an on-off valve 33b provided in the middle of the phosphoric acid aqueous solution supply pipe 33a.
  • the phosphoric acid aqueous solution supply pipe 33 a is located in the upper part of the tank 21, and the discharge side of the phosphoric acid aqueous solution supply pipe 33 a enters the tank 21.
  • the tank 21 may not be opened at the top. Further, the discharge side of the merging pipe 34 and the phosphoric acid aqueous solution supply pipe 33a does not need to enter the tank 21 and may be connected.
  • the buffer unit 40 includes an upper open tank 41 that temporarily stores a heated phosphoric acid aqueous solution and a reused phosphoric acid aqueous solution. Under the tank 41, a heater 41a for heating the phosphoric acid aqueous solution and the reused phosphoric acid aqueous solution is installed.
  • the tank 41 is provided with a liquid level detection unit 41 b that detects the liquid level of the phosphoric acid aqueous solution stored in the tank 41, and the detected liquid level is output to the control unit 100.
  • the tank 41 may not be opened at the top.
  • a discharge pipe 42 is connected from the tank 41 to the processing unit 60.
  • a pump 42a, a filter 42b, and an on-off valve 42c are provided in the middle of the discharge pipe 42.
  • One end of a circulation pipe 43 is connected between the filter 42b and the on-off valve 42c.
  • the other end of the circulation pipe 43 is connected to a tank 51 of a reheating unit 50 described later.
  • the reheating unit 50 has an upper open tank 51 for collecting the phosphoric acid aqueous solution used in the processing unit 60, a heater 52 for heating the phosphoric acid aqueous solution in the tank 51, and the phosphoric acid aqueous solution from the tank 51 to the tank 41.
  • Supplying supply pipe 53 is provided.
  • the processing unit 60 has a function of selectively removing the nitride film on the surface of the substrate W such as a semiconductor substrate by etching with respect to the oxide film using a phosphoric acid aqueous solution having a predetermined silica concentration.
  • the processing unit 60 includes a processing chamber 61 having a rotating mechanism for holding and rotating the substrate W, and a nozzle 62 for supplying a phosphoric acid aqueous solution having a predetermined silica concentration onto the substrate W in the processing chamber 61. Yes.
  • the nozzle 62 is one end of the discharge pipe 42, and a phosphoric acid aqueous solution having a predetermined silica concentration is discharged from the nozzle 62 as a processing liquid.
  • the processing unit 60 selectively removes the nitride film on the surface of the substrate W by supplying a phosphoric acid aqueous solution having a predetermined silica concentration as a processing liquid from the nozzle 62 toward the surface of the rotating substrate W. .
  • the recovery unit 70 has a recovery pipe 71 connected to the tank 51 of the reheating unit 50, and a pump 71 a is provided in the middle of the recovery pipe 71.
  • the control unit 100 includes a microcomputer that centrally controls each unit, and a storage unit that stores various processing information and various programs related to wet etching.
  • the control unit 100 tanks the silica additive when the silica concentration of the phosphoric acid aqueous solution detected by the silica concentration detecting unit 23 is lower than an allowable value (predetermined concentration range) based on various processing information and various programs. 21 is provided.
  • control unit 100 controls the above-described on-off valve 24a, the pump 32c, the heater 22, and the like so that the above-described functions are realized. Details of the control will be described later.
  • the wet etching process is performed as follows. It is assumed that all on-off valves are closed at the start. First, the control unit 100 opens the on-off valve 33b and supplies the phosphoric acid aqueous solution into the tank 21 via the phosphoric acid aqueous solution supply pipe 33a. Since the silica concentration of the phosphoric acid aqueous solution supplied into the tank 21 is in a state close to 0%, the control unit 100 opens the on-off valve 32d and drives the pump 32c to add the silica additive in the tank 32a. Is supplied to the tank 21 through the silica additive supply pipe 32 b and the merge pipe 34.
  • the silica additive is also supplied into the tank 21 at the same time as the phosphoric acid aqueous solution is supplied into the tank 21.
  • the supply amount of the phosphoric acid aqueous solution to be supplied to the tank 21 and the amount of the silica additive corresponding to the supply amount are also known. Therefore, when a predetermined amount of a predetermined amount of phosphoric acid aqueous solution and a predetermined amount of silica additive are supplied to the tank 21, the control unit 100 closes the on-off valve 32d and the on-off valve 33b, and the phosphoric acid aqueous solution and the silica additive are added. Stop supplying.
  • control unit 100 opens the open / close valve 31b and supplies a predetermined amount of pure water to the tank 21 via the water supply pipe 31a and the junction pipe 34.
  • the silica additive remaining in the merging pipe 34 when the silica additive is supplied is pushed by the pure water flowing through the merging pipe 34, and the merging pipe 34 is cleaned.
  • the pure water used for this cleaning is supplied to the tank 21.
  • the control unit 100 closes the on-off valve 31b.
  • the silica additive supply operation and the water cleaning operation are performed as needed when the silica concentration of the phosphoric acid aqueous solution detected by the silica concentration detection unit 23 is lower than a preset allowable value (predetermined concentration range). . Details of this point will be described later.
  • the solution supplied into the tank 21 is stirred by the above-described stirring device (not shown).
  • the control unit 100 may control the supply amount by controlling the on-off valves 33b and 32d based on the output signal.
  • the control unit 100 opens the on-off valve 33 b and supplies the phosphoric acid aqueous solution into the tank 21. .
  • the supply of the phosphoric acid aqueous solution at this time is stopped when the silica concentration value detected by the silica concentration detection unit 23 enters an allowable value.
  • the control unit 100 opens the on-off valve 31b.
  • the liquid level detection unit 26 also detects when the liquid level of the phosphoric acid aqueous solution in the tank 21 detected by the liquid level detection unit 26 is lower than a preset allowable value (predetermined height width).
  • the phosphoric acid aqueous solution is supplied from the phosphoric acid aqueous solution supply unit 33 to the tank 21 until the liquid level to be reached falls within an allowable value.
  • the silica concentration detection unit 23 detects that the silica concentration of the phosphoric acid aqueous solution stored in the tank 21 is lower than the allowable value
  • the silica additive supply unit 32 supplies the silica additive supply.
  • the silica additive is supplied to the tank 21 through the pipe 32 b and the merging pipe 34. Immediately after the supply of the silica additive is completed, the joining pipe 34 is washed with pure water in the same manner as described above.
  • the control unit 100 supplies power to the heater 22 and maintains the temperature of the phosphoric acid aqueous solution at 150 to 160 ° C., for example. Then, the control unit 100 opens the on-off valve 24a on condition that the silica concentration detected by the silica concentration detection unit 23 is within an allowable value. As a condition for opening the on-off valve 24a, it may be added that the phosphoric acid concentration detected by the phosphoric acid concentration detecting unit 23 is within an allowable value. Note that the control unit 100 invalidates output signals from the silica concentration detection unit 23, the phosphoric acid concentration detection unit 25, and the liquid level detection unit 26 when the on-off valve 24a is opened.
  • the control unit 100 drives the pump 42 a so that the phosphoric acid aqueous solution flows into the tank 51 via the circulation pipe 43.
  • the phosphoric acid aqueous solution circulated through the circulation pipe 43 or recovered from the processing unit 60 as described later is maintained at, for example, 150 to 160 ° C. by the heater 52.
  • the aqueous phosphoric acid solution in the tank 51 is returned to the tank 41 via the supply pipe 53.
  • control part 100 will close the on-off valve 24a, if the liquid level detection part 41b detects that the liquid level height of the phosphoric acid aqueous solution in the tank 41 entered into the preset tolerance.
  • the control unit 100 opens the on-off valve 42c while the substrate W to be processed is held in the processing unit 60 by the mechanism in the processing unit and rotated. Thereby, the phosphoric acid aqueous solution is supplied onto the substrate W from the nozzle 62, and a wet etching process is performed.
  • the nitride film and the oxide film are etched.
  • the etching proceeds at a desired selection ratio.
  • the substrate W after the etching treatment using the phosphoric acid aqueous solution is then washed with pure water or dried using a fast-drying organic solvent (such as isopropyl alcohol), and sent to the next semiconductor manufacturing process.
  • the aqueous phosphoric acid solution, pure water, and organic solvent are individually collected by a separation and recovery mechanism (not shown).
  • a phosphoric acid aqueous solution having a predetermined silica concentration is supplied from the tank 21 to the processing unit 60 through the buffer unit 40, and the substrate W is processed.
  • the on-off valve 33b is opened and the phosphoric acid aqueous solution is stored in the tank. 21 is supplied.
  • the on-off valve 31b is opened at a certain timing, and the water supply pipe 31a and the merging It is supplied to the tank 21 through the pipe 34.
  • the open / close valve 31b is controlled based on the output signal of the phosphoric acid concentration detection unit 25 provided in the tank 21 so that pure water is supplied to the tank 21. Also good.
  • the silica additive is performed mainly in association with the supply of the phosphoric acid aqueous solution to the tank 21, and the silica concentration of the phosphoric acid aqueous solution detected by the silica concentration detecting unit 23 is lower than the allowable value. Then, the on-off valve 32d is opened and the pump 32c is driven to supply the silica additive to the tank 21 via the silica additive supply pipe 32b and the merge pipe 34.
  • the supply timing may be any of before ( ⁇ 1 in FIG. 2), during supply ( ⁇ 2 in FIG. 2), and after supply ( ⁇ 3 in FIG. 2).
  • the control unit 100 opens the on-off valve 31b immediately after closing the on-off valve 32d, that is, immediately after the supply of the silica additive, to supply water.
  • a predetermined amount of pure water set in advance in the junction pipe 34 is supplied through the pipe 31a. That is, when the supply timing of the silica additive is ⁇ 1 in FIG. 2, pure water is supplied at the timing of ⁇ 1 in FIG. Similarly, when the supply timing of the silica additive is ⁇ 2 in FIG. 2, pure water is supplied at the timing of ⁇ 2 in FIG. When the supply timing of the silica additive is ⁇ 3 in FIG. 2, pure water is supplied at the timing of ⁇ 3 in FIG. As a result, the silica additive is washed away from the junction pipe 34.
  • the predetermined amount of pure water that flows through the merge pipe 34 immediately after the silica additive is supplied to the tank 21 can be managed by, for example, the time of washing. That is, the opening time of the on-off valve 31b is set to a time determined from the experimental result by obtaining the time for washing out the silica additive by experiment or the like. In order to supply pure water immediately after supplying the silica additive, it is preferable to open the on-off valve 31b at the same time as the on-off valve 32d is closed.
  • the silica additive agglomerating in the merging pipe 34 will be described. That is, when the time elapses, the silica additive is deprived of moisture and dried, and the silica additive is deposited in the merge pipe 34. When this phenomenon occurs every time the silica additive is supplied, the silica additive adheres to the inner wall of the merging pipe 34 and gradually accumulates. Eventually, the silica additive solidifies into a gel (aggregation). For this reason, an appropriate amount of silica additive cannot be supplied to the tank 21 via the merge pipe 34. For this reason, it becomes impossible to stabilize the selection ratio between the nitride film and the oxide film at the time of etching, resulting in an etching failure.
  • the substrate processing can be executed with an appropriate silica concentration.
  • the silica additive when a part of the discharge side of the merge pipe 34 is in the tank 21, the phosphoric acid aqueous solution is heated in the tank 21. A high temperature steam of acid and water is generated. For this reason, high-temperature steam enters the merge pipe 34.
  • the silica additive passes through the merge pipe 34 in this state, the silica additive reacts with phosphoric acid, which is an acid, so that the moisture of the silica additive is easily deprived. Therefore, in the case of the above configuration, the silica additive tends to precipitate in the joining pipe 34 and adhere to the inner wall of the joining pipe 34 in a gel form. For this reason, an appropriate amount of silica additive cannot be supplied to the tank 21 via the merge pipe 34. For this reason, it becomes impossible to stabilize the selection ratio between the nitride film and the oxide film at the time of etching, resulting in an etching failure.
  • a predetermined amount of pure water is supplied to the merging pipe 34 even before the silica additive is supplied to the tank 21, and the phosphoric acid aqueous solution in the merging pipe 34 is washed away with pure water. Solved this problem. Thereby, the substrate processing can be executed with an appropriate silica concentration even in the above configuration.
  • timing before supplying the silica additive to the tank 21 immediately before the silica additive is supplied to the merging pipe 34 is raised, but since the previous timing of supplying pure water accompanying the supply of the silica additive, this time The timing of supplying the silica additive is sufficient. Further, for example, when the time from the supply end timing of pure water accompanying the previous silica additive supply to the current silica additive supply timing is short, the high-temperature steam to the merging pipe 34 described above is used. If it is determined that the influence of the intrusion is small, cleaning with pure water before supplying the silica additive may be omitted.
  • the supply amount of water before supplying the silica additive can be made larger than the supply amount after the addition. That is, the main purpose of the water supplied before supplying the silica additive is to discharge all phosphoric acid (steam) adhering in the merge pipe 34 from the merge pipe 34, whereas the silica additive This is because the main purpose of the water supplied after the supply is to make the silica additive fluid and not stay in the merge pipe 34.
  • the on-off valve 31b of the water supply pipe 31a is preferably a mechanism capable of adjusting the flow rate.
  • the silica additive is supplied to the tank 21 via the merge pipe 34 to reduce the silica concentration. Can be kept constant.
  • the silica additive adhering in the merge pipe 34 is washed away from the merge pipe 34 with pure water. Therefore, every time when the silica additive is supplied through the merging pipe 34, and after supplying the silica additive, pure water is allowed to flow through the merging pipe 34, thereby adding the silica adhering to the inner wall of the merging pipe 34. Since the agent is washed away, the precipitation or gelation of the silica additive in the merging pipe 34 can be suppressed and clogging of the merging pipe 34 can be prevented.
  • an appropriate amount of the silica additive is supplied to the tank 21 each time the silica additive is supplied.
  • the phosphoric acid aqueous solution having an appropriate silica concentration is stored in the tank 21, the selection ratio between the nitride film and the oxide film at the time of etching can be stabilized and the occurrence of etching failure can be prevented. Can do. That is, the substrate processing can be executed with an appropriate silica concentration.
  • the silica additive before supplying the silica additive to the tank 21 via the merging pipe 34, the silica additive is added to the merging pipe 34 by flowing pure water through the merging pipe 34 and washing away phosphoric acid adhering in the merging pipe 34. Even if it supplies, it can prevent that a silica additive contacts phosphoric acid in the merge piping 34. FIG. Thereby, even when the vapor of the phosphoric acid aqueous solution enters the joining pipe, it is possible to prevent the silica additive from being precipitated or gelled in the joining pipe 34 and to be hardened, thereby preventing clogging in the joining pipe 34. can do.
  • the phosphoric acid aqueous solution having an appropriate silica concentration is stored in the tank 21, the selection ratio between the nitride film and the oxide film at the time of etching can be stabilized and the occurrence of defective etching can be prevented. it can. That is, the substrate processing can be executed with an appropriate silica concentration.
  • FIG. 3 is an explanatory view schematically showing a substrate processing apparatus 10A according to the second embodiment of the present invention. 3, the same functional parts as those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof is omitted.
  • the silica additive supply pipe 32b is connected at the junction B in the middle of the water supply pipe 31a for supplying water (pure water) to the tank 21, and the phosphoric acid aqueous solution supply pipe 33a is connected at the junction C.
  • the water supply section 31 side is referred to as the upstream side
  • the discharge port side facing the tank 21 is referred to as the downstream side
  • the downstream side from the junction C in the water supply pipe 31a is the junction pipe 34 in this embodiment. Call it.
  • the merging portion B is provided on the downstream side of the merging portion C.
  • a merging pipe 34 that joins the phosphoric acid aqueous solution supply pipe 33 a and the water supply pipe 31 a to supply the tank 21 is provided, and the silica additive supply pipe 32 b is connected to the merging pipe 34. .
  • the silica additive reacts with the phosphoric acid aqueous solution.
  • the silica additive does not precipitate immediately even if the phosphoric acid aqueous solution and the silica additive are mixed. Therefore, when the phosphoric acid aqueous solution is flowing, even if the silica additive is supplied, the silica additive flows together with the flow of the phosphoric acid aqueous solution.
  • the time elapses while the phosphoric acid aqueous solution and the silica additive are mixed and kept in the joining pipe 34 it is not preferable that the time elapses while the phosphoric acid aqueous solution and the silica additive are mixed and kept in the joining pipe 34.
  • pure water is supplied to the merge pipe 34 after supplying the silica additive via the merge pipe 34. Further, before supplying the silica additive, pure water is supplied into the joining pipe 34 to clean the inside of the joining pipe.
  • an aqueous phosphoric acid solution, pure water, and a silica additive are supplied at the same timing as that of the substrate processing apparatus 10 described above.
  • the present embodiment also has the same operational effects as the first embodiment.
  • FIG. 4 is an explanatory view schematically showing a substrate processing apparatus 10B according to the third embodiment of the present invention. 4, the same functional parts as those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof is omitted.
  • the silica additive supply pipe 32b is connected at the junction B, and the phosphoric acid aqueous solution supply pipe 33a is at the junction C. Connected.
  • the merging portion B is provided on the upstream side of the merging portion C. Further, the downstream side of the junction B in the water supply pipe 31a is referred to as a junction pipe 34 in the present embodiment.
  • a merging pipe 34 that joins the silica additive supply pipe 32 b and the water supply pipe 31 a to supply the tank 21 is provided, and a phosphoric acid aqueous solution supply pipe 33 a is connected to the middle of the merging pipe 34.
  • an aqueous phosphoric acid solution, pure water, and a silica additive are supplied at the same timing as that of the substrate processing apparatus 10 described above. Further, after supplying the silica additive and before supplying the silica additive, pure water is supplied into the joining pipe 34 and the inside of the joining pipe 34 is washed, as in the first and second embodiments. Yes, it has the same effect.
  • the single wafer processing method for processing the substrates W one by one is used.
  • the present invention is not limited to this.
  • a plurality of substrates W are simultaneously immersed in the processing tank for processing.
  • a batch processing method may be used.
  • a water supply pipe obtained by joining the phosphoric acid aqueous solution supply pipe and the silica additive supply pipe in the middle is directly or indirectly connected to the batch type processing tank, or the tank 21 is connected to the batch type processing tank. This can be done.
  • the nozzle 62 that discharges the phosphoric acid aqueous solution has been illustrated as having a fixed position, the nozzle 62 may be configured to scan along the surface of the substrate W.
  • the water for washing the silica additive and the water for supplying to the tank 21 are performed from one water supply unit 31.
  • a mechanism for supplying water for supplying to the tank 21 may be provided separately.
  • an opening / closing valve 34a may be provided in the junction pipe 34, and the discharge pipe 34b may be connected upstream of the position where the opening / closing valve 34a is provided.
  • the pure water after washing the joining pipe 34 is configured to flow into the tank 21.
  • the silica additive adhering to the merging pipe 34 is a part of the supply amount to be supplied to the tank 21, and therefore the required amount of the silica additive is made to flow to the tank 21 that was the supply destination. Can be maintained.
  • the on-off valve 34a In the closed state, the washing water is caused to flow through the junction pipe 34, and the washed water is discharged to other than the tank 21 through the discharge pipe 34 b branched from the junction pipe 34. In this way, even if the amount of washing water is large, the phosphoric acid aqueous solution will not be diluted. Further, for example, when the silica additive adhering to the joining pipe 34 as a lump can be removed by washing, the lump can be prevented from entering the tank 21.
  • the silica additive Although a part of the required amount of the silica additive is discharged to the outside, it is effective when priority is given to preventing the silica additive from adhering in the merging pipe 34 over the decrease in the concentration of the silica additive. It is.
  • the reduction in the silica concentration can be achieved by supplying the silica additive again through the washed junction pipe 34.
  • the on-off valve 34a is provided as close as possible to the discharge port of the junction pipe 34 (near the downstream end of the water supply pipe 31a), and the discharge pipe 34b is located upstream of the on-off valve 34a and the junction pipe 34. It is preferable to connect near the discharge side.
  • opening / closing valve 34a and the discharge pipe 34b are not necessarily provided as described in the above embodiment when the amount of pure water used for washing before or after the silica additive is supplied is small.
  • the opening / closing valve 32d provided in the silica additive supply pipe 32b may be disposed close to the merging portions A and B. Since the silica additive supply pipe 32b existing between the on-off valve 32d and the tank 32a is normally disconnected from the outside air, the silica additive is deposited and deposited in the silica additive supply pipe 32b. Etc. does not occur.
  • the merging pipe 34 is washed with pure water. This is because the silica additive adhering to and remaining on the junction pipe 34 is washed away.
  • the supply timing of pure water is preferably immediately after the supply of the silica additive is finished, but the supply of pure water may be started before the supply of the silica additive is completed, It may be after supply of the agent and before drying of the silica additive remaining in the merging pipe 34 starts.
  • the etching processing apparatus has been described as an example.
  • the present invention can be applied as long as it is processing using a phosphoric acid aqueous solution whose silica concentration is controlled.
  • the substrate processing apparatus and the substrate processing method which can perform a substrate processing with appropriate silica density

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
PCT/JP2016/079113 2015-09-30 2016-09-30 基板処理装置及び基板処理方法 WO2017057727A1 (ja)

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CN111696889A (zh) * 2019-03-13 2020-09-22 东京毅力科创株式会社 混合装置、混合方法以及基板处理系统
CN111696889B (zh) * 2019-03-13 2024-05-17 东京毅力科创株式会社 混合装置、混合方法以及基板处理系统
CN111696891A (zh) * 2019-03-15 2020-09-22 东京毅力科创株式会社 基片处理装置、混合方法和基片处理方法
CN111696891B (zh) * 2019-03-15 2024-05-03 东京毅力科创株式会社 基片处理装置、混合方法和基片处理方法
JP7504636B2 (ja) 2020-03-24 2024-06-24 芝浦メカトロニクス株式会社 処理液製造装置、基板処理装置、処理液製造方法及び基板処理方法

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JPWO2017057727A1 (ja) 2018-07-19
CN108140572B (zh) 2022-12-30
JP7098800B2 (ja) 2022-07-11
KR101962080B1 (ko) 2019-03-25
KR20180041725A (ko) 2018-04-24
TW201721714A (zh) 2017-06-16
JP6935330B2 (ja) 2021-09-15
TWI619142B (zh) 2018-03-21
JP2021166307A (ja) 2021-10-14

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