KR101987810B1 - 기판 처리 장치 - Google Patents
기판 처리 장치 Download PDFInfo
- Publication number
- KR101987810B1 KR101987810B1 KR1020170142137A KR20170142137A KR101987810B1 KR 101987810 B1 KR101987810 B1 KR 101987810B1 KR 1020170142137 A KR1020170142137 A KR 1020170142137A KR 20170142137 A KR20170142137 A KR 20170142137A KR 101987810 B1 KR101987810 B1 KR 101987810B1
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- South Korea
- Prior art keywords
- tank
- substrate
- chemical liquid
- recovered
- supply line
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract description 64
- 239000000126 substance Substances 0.000 claims abstract description 103
- 238000000034 method Methods 0.000 claims abstract description 82
- 239000007788 liquid Substances 0.000 claims abstract description 68
- 238000011084 recovery Methods 0.000 claims abstract description 26
- 239000002547 new drug Substances 0.000 claims abstract description 8
- 239000003814 drug Substances 0.000 description 10
- 229940079593 drug Drugs 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 7
- 239000012535 impurity Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 238000004148 unit process Methods 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- -1 Sulfate Peroxide Chemical class 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
도 2는 본 발명의 제2 실시예에 따른 기판 처리 장치를 설명하기 위한 도면이다.
도 3은 본 발명의 제3 실시예에 따른 기판 처리 장치를 설명하기 위한 도면이다.
도 4는 도 3의 기판 처리 장치의 동작을 설명하기 위한 도면이다.
140: 제1 분배 박스 200: 제2 탱크
240: 제2 분배 박스 300: 회수 탱크
Claims (9)
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 기판의 처리 공정을 수행하는 공정 챔버;
신규 약액이 저장된 제1 탱크; 및
상기 공정 챔버로부터 회수된 회수 약액이 저장된 제2 탱크를 포함하되,
제1 모드에서, 상기 제1 탱크로부터 제공되는 신규 약액은 상기 기판의 전면에 대한 처리 공정에 사용되고, 상기 제2 탱크로부터 제공된 회수 약액은 상기 기판의 후면에 대한 처리 공정에 사용되고,
제2 모드에서, 상기 제1 탱크로부터 제공되는 신규 약액이 상기 기판의 전면 및 후면에 대한 처리 공정에 사용되는, 기판 처리 장치. - 제 7항에 있어서,
제3 모드에서, 상기 제2 탱크로부터 제공되는 회수 약액이 상기 기판의 전면 및 후면에 대한 처리 공정에 사용되는, 기판 처리 장치. - 제 7항에 있어서,
상기 제1 탱크로부터 상기 공정 챔버에 상기 신규 약액을 전달하기 위한 제1 공급 라인과,
상기 제2 탱크로부터 상기 공정 챔버에 상기 회수 약액을 전달하기 위한 제2 공급 라인과,
상기 제1 공급 라인과 상기 제2 공급 라인 사이를 연결하는 연결 라인과,
상기 연결 라인 상에 설치되고, 온/오프에 따라 상기 제1 공급 라인과 상기 제2 공급 라인을 선택적으로 연결하는 밸브 유닛을 더 포함하는, 기판 처리 장치.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020170142137A KR101987810B1 (ko) | 2017-10-30 | 2017-10-30 | 기판 처리 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020170142137A KR101987810B1 (ko) | 2017-10-30 | 2017-10-30 | 기판 처리 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20190047834A KR20190047834A (ko) | 2019-05-09 |
KR101987810B1 true KR101987810B1 (ko) | 2019-06-11 |
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KR1020170142137A KR101987810B1 (ko) | 2017-10-30 | 2017-10-30 | 기판 처리 장치 |
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KR (1) | KR101987810B1 (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR102650047B1 (ko) | 2021-08-24 | 2024-03-20 | 세메스 주식회사 | 기판 처리액 공급 유닛 및 이를 구비하는 기판 처리 장치 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6022431B2 (ja) * | 2013-10-17 | 2016-11-09 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法 |
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