KR101962080B1 - 기판 처리 장치 및 기판 처리 방법 - Google Patents

기판 처리 장치 및 기판 처리 방법 Download PDF

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Publication number
KR101962080B1
KR101962080B1 KR1020187007628A KR20187007628A KR101962080B1 KR 101962080 B1 KR101962080 B1 KR 101962080B1 KR 1020187007628 A KR1020187007628 A KR 1020187007628A KR 20187007628 A KR20187007628 A KR 20187007628A KR 101962080 B1 KR101962080 B1 KR 101962080B1
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KR
South Korea
Prior art keywords
phosphoric acid
silica additive
supply
water
supply pipe
Prior art date
Application number
KR1020187007628A
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English (en)
Korean (ko)
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KR20180041725A (ko
Inventor
구니히로 미야자키
마사아키 후루야
고노스케 하야시
가츠히로 야마자키
유키 사이토
다케키 고가와
Original Assignee
시바우라 메카트로닉스 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of KR20180041725A publication Critical patent/KR20180041725A/ko
Application granted granted Critical
Publication of KR101962080B1 publication Critical patent/KR101962080B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020187007628A 2015-09-30 2016-09-30 기판 처리 장치 및 기판 처리 방법 KR101962080B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2015-195397 2015-09-30
JP2015195397 2015-09-30
PCT/JP2016/079113 WO2017057727A1 (ja) 2015-09-30 2016-09-30 基板処理装置及び基板処理方法

Publications (2)

Publication Number Publication Date
KR20180041725A KR20180041725A (ko) 2018-04-24
KR101962080B1 true KR101962080B1 (ko) 2019-03-25

Family

ID=58423766

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187007628A KR101962080B1 (ko) 2015-09-30 2016-09-30 기판 처리 장치 및 기판 처리 방법

Country Status (5)

Country Link
JP (2) JP6935330B2 (zh)
KR (1) KR101962080B1 (zh)
CN (1) CN108140572B (zh)
TW (1) TWI619142B (zh)
WO (1) WO2017057727A1 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6961058B2 (ja) * 2017-09-28 2021-11-05 東京エレクトロン株式会社 基板処理装置および基板処理方法
KR102264002B1 (ko) 2017-10-20 2021-06-11 도쿄엘렉트론가부시키가이샤 기판 처리 장치, 기판 처리 방법 및 기억 매체
JP6777704B2 (ja) * 2017-10-20 2020-10-28 東京エレクトロン株式会社 基板処理装置、基板処理方法および記憶媒体
JP6917868B2 (ja) * 2017-11-15 2021-08-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP2020150126A (ja) * 2019-03-13 2020-09-17 東京エレクトロン株式会社 混合装置、混合方法および基板処理システム
CN111696891B (zh) * 2019-03-15 2024-05-03 东京毅力科创株式会社 基片处理装置、混合方法和基片处理方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010074060A (ja) 2008-09-22 2010-04-02 Apprecia Technology Inc エッチング液の調製方法、エッチング方法及びエッチング装置
JP2013232593A (ja) 2012-05-01 2013-11-14 Tokyo Electron Ltd エッチング方法、エッチング装置および記憶媒体
JP2014209581A (ja) 2013-03-29 2014-11-06 芝浦メカトロニクス株式会社 ウェットエッチング装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3382138B2 (ja) * 1997-08-21 2003-03-04 富士通株式会社 薬液供給装置及び薬液供給方法
JPH11186209A (ja) * 1997-12-25 1999-07-09 Dainippon Screen Mfg Co Ltd 基板処理装置
TW486392B (en) * 2000-09-29 2002-05-11 Air Prod & Chem Solvent blend for use in high purity precursor removal
US7806988B2 (en) * 2004-09-28 2010-10-05 Micron Technology, Inc. Method to address carbon incorporation in an interpoly oxide
JP2007258405A (ja) * 2006-03-23 2007-10-04 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
JP5058560B2 (ja) * 2006-10-26 2012-10-24 株式会社平間理化研究所 エッチング液管理装置
JP2008291312A (ja) * 2007-05-24 2008-12-04 Sumitomo Precision Prod Co Ltd 基板処理装置
CN201611648U (zh) * 2009-12-15 2010-10-20 中芯国际集成电路制造(上海)有限公司 湿法腐蚀设备
JP2011187891A (ja) 2010-03-11 2011-09-22 Tokyo Electron Ltd 液処理装置、液処理方法、プログラムおよびプログラム記録媒体
CN105339183B (zh) 2013-03-15 2018-11-09 东京毅力科创Fsi公司 用于提供加热的蚀刻溶液的系统
JP6502633B2 (ja) * 2013-09-30 2019-04-17 芝浦メカトロニクス株式会社 基板処理方法及び基板処理装置
TWI578396B (zh) * 2013-12-11 2017-04-11 斯克林集團公司 基板處理方法及基板處理裝置
JP6295107B2 (ja) * 2014-03-07 2018-03-14 株式会社荏原製作所 基板処理システムおよび基板処理方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010074060A (ja) 2008-09-22 2010-04-02 Apprecia Technology Inc エッチング液の調製方法、エッチング方法及びエッチング装置
JP2013232593A (ja) 2012-05-01 2013-11-14 Tokyo Electron Ltd エッチング方法、エッチング装置および記憶媒体
JP2014209581A (ja) 2013-03-29 2014-11-06 芝浦メカトロニクス株式会社 ウェットエッチング装置

Also Published As

Publication number Publication date
CN108140572A (zh) 2018-06-08
KR20180041725A (ko) 2018-04-24
JP6935330B2 (ja) 2021-09-15
JPWO2017057727A1 (ja) 2018-07-19
TWI619142B (zh) 2018-03-21
JP7098800B2 (ja) 2022-07-11
TW201721714A (zh) 2017-06-16
WO2017057727A1 (ja) 2017-04-06
CN108140572B (zh) 2022-12-30
JP2021166307A (ja) 2021-10-14

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