WO2017057376A1 - マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法 - Google Patents
マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法 Download PDFInfo
- Publication number
- WO2017057376A1 WO2017057376A1 PCT/JP2016/078483 JP2016078483W WO2017057376A1 WO 2017057376 A1 WO2017057376 A1 WO 2017057376A1 JP 2016078483 W JP2016078483 W JP 2016078483W WO 2017057376 A1 WO2017057376 A1 WO 2017057376A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- phase shift
- film
- layer
- upper layer
- mask
- Prior art date
Links
- 230000010363 phase shift Effects 0.000 title claims abstract description 470
- 238000004519 manufacturing process Methods 0.000 title claims description 32
- 239000004065 semiconductor Substances 0.000 title claims description 29
- 239000000463 material Substances 0.000 claims abstract description 149
- 239000000758 substrate Substances 0.000 claims abstract description 124
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 98
- 230000008033 biological extinction Effects 0.000 claims abstract description 76
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 60
- 239000010703 silicon Substances 0.000 claims abstract description 59
- 239000010410 layer Substances 0.000 claims description 402
- 239000011651 chromium Substances 0.000 claims description 73
- 229910052804 chromium Inorganic materials 0.000 claims description 68
- 238000012546 transfer Methods 0.000 claims description 61
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 46
- 229910052760 oxygen Inorganic materials 0.000 claims description 46
- 239000001301 oxygen Substances 0.000 claims description 46
- 238000002834 transmittance Methods 0.000 claims description 35
- 239000002344 surface layer Substances 0.000 claims description 21
- 238000013508 migration Methods 0.000 abstract description 16
- 230000005012 migration Effects 0.000 abstract description 16
- 230000005540 biological transmission Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 520
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 88
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 62
- 239000007789 gas Substances 0.000 description 57
- 238000000034 method Methods 0.000 description 45
- 229910052757 nitrogen Inorganic materials 0.000 description 40
- 238000005530 etching Methods 0.000 description 33
- 238000004544 sputter deposition Methods 0.000 description 32
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 26
- 230000003287 optical effect Effects 0.000 description 22
- 238000001312 dry etching Methods 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 21
- 230000008569 process Effects 0.000 description 21
- 239000002184 metal Substances 0.000 description 19
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 15
- 229910052750 molybdenum Inorganic materials 0.000 description 15
- 239000011733 molybdenum Substances 0.000 description 15
- 238000011282 treatment Methods 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 14
- 229910052786 argon Inorganic materials 0.000 description 13
- 239000000460 chlorine Substances 0.000 description 12
- 238000005546 reactive sputtering Methods 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 230000007423 decrease Effects 0.000 description 11
- 238000013461 design Methods 0.000 description 10
- 239000001307 helium Substances 0.000 description 10
- 229910052734 helium Inorganic materials 0.000 description 10
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 10
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 9
- 229910052731 fluorine Inorganic materials 0.000 description 9
- 239000011737 fluorine Substances 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 8
- 229910052752 metalloid Inorganic materials 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 238000001552 radio frequency sputter deposition Methods 0.000 description 8
- 239000002356 single layer Substances 0.000 description 8
- 229910052723 transition metal Inorganic materials 0.000 description 8
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 7
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 7
- 229910052801 chlorine Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 7
- 230000001443 photoexcitation Effects 0.000 description 7
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 229910001882 dioxygen Inorganic materials 0.000 description 6
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 238000004088 simulation Methods 0.000 description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 6
- 238000011161 development Methods 0.000 description 5
- 230000018109 developmental process Effects 0.000 description 5
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 239000010955 niobium Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000010948 rhodium Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 150000003624 transition metals Chemical class 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000005672 electromagnetic field Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910052743 krypton Inorganic materials 0.000 description 3
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 3
- 229910052755 nonmetal Inorganic materials 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 238000005477 sputtering target Methods 0.000 description 3
- 229910052724 xenon Inorganic materials 0.000 description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 238000001659 ion-beam spectroscopy Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- ITWBWJFEJCHKSN-UHFFFAOYSA-N 1,4,7-triazonane Chemical compound C1CNCCNCCN1 ITWBWJFEJCHKSN-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910004535 TaBN Inorganic materials 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- 229910004158 TaO Inorganic materials 0.000 description 1
- 229910003071 TaON Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001845 chromium compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001420 photoelectron spectroscopy Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910021350 transition metal silicide Inorganic materials 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Definitions
- the present invention relates to a mask blank and a phase shift mask manufactured using the mask blank.
- the present invention also relates to a method of manufacturing a semiconductor device using the phase shift mask.
- a fine pattern is formed using a photolithography method. Further, a number of substrates called transfer masks are usually used for forming this fine pattern.
- transfer masks are usually used for forming this fine pattern.
- the wavelength of an exposure light source used in photolithography it is necessary to shorten the wavelength of an exposure light source used in photolithography in addition to miniaturization of a mask pattern formed on a transfer mask.
- the wavelength has been shortened from an KrF excimer laser (wavelength 248 nm) to an ArF excimer laser (wavelength 193 nm).
- a halftone phase shift mask is known in addition to a binary mask having a light-shielding pattern made of a chromium-based material on a conventional translucent substrate.
- a molybdenum silicide (MoSi) -based material is widely used for the phase shift film of the halftone phase shift mask.
- MoSi-based films have low resistance to ArF excimer laser exposure light (so-called ArF light resistance).
- the MoSi-based film after the pattern is formed is subjected to plasma treatment, UV irradiation treatment, or heat treatment, and a passive film is formed on the surface of the MoSi-based film pattern. The ArF light resistance of the film is enhanced.
- a light shielding band is often provided at the periphery of a transfer pattern formation region, which is a region where a phase shift pattern is formed. Even within the transfer pattern formation region, a light shielding pattern having a small size may be laminated on a relatively large phase shift pattern.
- a metal silicide transfer mask film (light semi-transmissive film), a light shielding film made of a chromium compound, and a hardware made of a silicon compound are used from the substrate side.
- a mask blank having a thin film configuration of a mask film is disclosed.
- JP 2010-217514 A International Publication No. 2004/090635
- a halftone phase shift mask is a halftone phase shift film (hereinafter simply referred to as a phase shift film) in which a transfer pattern (phase shift pattern) is formed on a translucent substrate. )) And a light-shielding film on which a light-shielding pattern such as a light-shielding band is formed is generally provided.
- a phase shift mask is manufactured using a mask blank having a structure in which a phase shift film and a light shielding film are sequentially laminated on a light-transmitting substrate.
- a phase shift mask using this mask blank, it is necessary to form different patterns on the phase shift film and the light shielding film. For this reason, it is necessary to apply materials having different dry etching characteristics to the phase shift film and the light shielding film.
- the phase shift film has a function of transmitting ArF exposure light at a predetermined transmittance and ArF exposure light passing through the air by the same distance as the thickness of the phase shift film with respect to the transmitted ArF exposure light. It is necessary to provide a function that generates a predetermined phase difference.
- a material containing silicon can be easily adjusted to an optical characteristic suitable for forming a phase shift film having such a function.
- a transition metal silicide-based material is widely used as a material of a phase shift film. .
- a material containing silicon is applied to the phase shift film, a material containing chromium is often applied to the material of the light shielding film.
- a material containing chromium may be applied to the layer on the side in contact with the phase shift film (this layer may be treated as another functional film as an etching stopper film). .) This is because the thin film of the material containing chromium and the thin film of the material containing silicon have high etching selectivity with each other when patterning by dry etching.
- phase shift mask when a phase shift mask is set on a mask stage of an exposure apparatus and a transfer pattern is exposed and transferred to a transfer object such as a resist film on a semiconductor substrate, the phase shift mask is exposed from the translucent substrate side of the phase shift mask. Light is irradiated.
- the above includes a phase shift film made of a material containing silicon and a light-shielding film made of a material containing chromium (including a light-shielding film in which a layer on the side in contact with the phase shift film is made of a material containing chromium).
- phase shift mask When a large-size phase shift film pattern is arranged in the phase shift mask, a light-shielding film pattern having a small size may be provided on the pattern. In such a case, the influence due to the occurrence of chromium migration is particularly large.
- the phase shift mask is set on the mask stage of the exposure apparatus and irradiated with ArF exposure light, if chromium atoms in the light shielding film are excited and many chromium atoms enter the pattern of the phase shift film, The transmittance of the shift film decreases. In the case of a halftone type phase shift film, the decrease in transmittance leads to a decrease in the phase shift effect generated between the exposure light transmitted through the phase shift pattern and the exposure light transmitted through the translucent portion.
- chromium atoms that have entered the phase shift film may be deposited on the side wall of the phase shift film pattern and adversely affect the pattern image of the exposure light that has passed through the phase shift mask. Further, chromium atoms that have entered the phase shift film may be deposited on the surface of the light-transmitting substrate of the light-transmitting portion, and may cause clouding in the light-transmitting portion (decrease in the transmittance of the light-transmitting portion).
- the present invention has been made to solve the conventional problems. That is, a phase shift film and a light shielding film are laminated in this order on a translucent substrate, the phase shift film is formed of a material containing silicon and substantially not containing chromium, and at least the phase shift film of the light shielding film Even when a mask blank having a configuration in which the layer in contact with the substrate is formed of a material containing chromium, a phase shift mask is manufactured from the mask blank, and exposure transfer is performed with an exposure apparatus using the phase shift mask.
- Another object of the present invention is to provide a mask blank in which the occurrence of chromium migration is greatly suppressed. Moreover, it aims at providing the phase shift mask manufactured using this mask blank.
- An object of the present invention is to provide a method of manufacturing a semiconductor device using such a phase shift mask.
- the present invention has the following configuration.
- (Configuration 1) A mask blank having a structure in which a phase shift film and a light shielding film are laminated in this order on a light transmitting substrate,
- the phase shift film has a function of transmitting ArF excimer laser exposure light with a transmittance of 2% to 30%, and the same distance as the thickness of the phase shift film with respect to the exposure light transmitted through the phase shift film.
- the phase shift film is formed of a material containing silicon and substantially not containing chromium, and includes a structure in which a lower layer and an upper layer are stacked from the translucent substrate side,
- the lower layer has a smaller refractive index n at the wavelength of the exposure light than the translucent substrate
- the upper layer has a higher refractive index n at the wavelength of the exposure light than the translucent substrate
- the lower layer has a larger extinction coefficient k at the wavelength of the exposure light than the upper layer
- the light shielding film includes a layer in contact with the phase shift film,
- the layer in contact with the phase shift film is made of a material containing chromium, has a smaller refractive index n at the wavelength of the exposure light than the upper layer, and a larger extinction coefficient k at the wavelength of the exposure light than the upper layer.
- a mask blank characterized by that.
- (Configuration 12) The mask blank according to any one of configurations 1 to 11, wherein a back surface reflectance with respect to the exposure light incident from the translucent substrate side is 30% or more.
- (Configuration 13) A phase shift mask having a structure in which a phase shift film on which a transfer pattern is formed and a light shielding film on which a light shielding pattern is formed are laminated in this order on a translucent substrate, The phase shift film has a function of transmitting ArF excimer laser exposure light with a transmittance of 2% to 30%, and the same distance as the thickness of the phase shift film with respect to the exposure light transmitted through the phase shift film.
- the phase shift film is formed of a material containing silicon and substantially not containing chromium, and includes a structure in which a lower layer and an upper layer are stacked from the translucent substrate side, The lower layer has a smaller refractive index n at the wavelength of the exposure light than the translucent substrate, The upper layer has a higher refractive index n at the wavelength of the exposure light than the translucent substrate, The lower layer has a larger extinction coefficient k at the wavelength of the exposure light than the upper layer,
- the light shielding film includes a layer in contact with the phase shift film, The layer in contact with the phase shift film is made of a material containing chromium, has a smaller refractive index n at the wavelength of the exposure light than the upper layer, and a larger extinction coefficient k at the wavelength of the exposure light than the upper layer.
- a phase shift mask characterized by that.
- (Configuration 20) 20 The phase shift mask according to any one of Configurations 13 to 19, wherein the upper layer has an extinction coefficient k of 0.8 or less.
- (Configuration 21) 21 The phase shift mask according to any one of Structures 13 to 20, wherein an extinction coefficient k of the layer in contact with the phase shift film is 1.0 or more.
- (Configuration 24) 24 The phase shift mask according to any one of Structures 13 to 23, wherein a back surface reflectance with respect to the exposure light incident from the translucent substrate side is 30% or more.
- (Configuration 25) 25 A method of manufacturing a semiconductor device comprising a step of exposing and transferring a transfer pattern to a resist film on a semiconductor substrate using the phase shift mask according to any one of Structures 13 to 24.
- phase shift film and a light shielding film are laminated in this order on a translucent substrate, the phase shift film is formed of a material containing silicon and substantially not containing chromium,
- phase shift mask in which a phase shift film made of a silicon-containing material and a light-shielding film made of a chromium-containing material are stacked on a light-transmitting substrate, the chromium atoms in the light-shielding film are phase-shifted.
- chromium migration occurs due to photoexcitation of silicon in the phase shift film and chromium in the light shielding film by ArF exposure light.
- ArF exposure light incident on the inside of the translucent substrate of the phase shift mask is partially reflected at the interface between the main surface of the substrate and the pattern of the phase shift film, but most of the ArF exposure light is a phase shift film.
- the phase shift film needs to have a function of transmitting ArF exposure light with a predetermined transmittance. For this reason, the phase shift film has an optical characteristic that absorbs most of ArF exposure light incident on the phase shift film.
- Each atom of silicon or transition metal constituting the phase shift film that has absorbed the energy of ArF exposure light is photoexcited by absorbing the energy.
- ArF exposure light transmitted through the phase shift film is partially reflected at the interface between the phase shift film and the light shielding film. However, the remainder enters the light shielding film. Then, most of the ArF exposure light is absorbed inside the light shielding film, and the ArF exposure light emitted from the light shielding film is negligible (for example, 0.01% with respect to the amount of ArF exposure light before entering the phase shift film). It attenuates to the amount of light. At this time, inside the light shielding film, the chromium atoms absorb the energy of ArF exposure light and are photoexcited.
- the conventional phase shift film has a design concept of controlling the transmittance by absorbing ArF exposure light inside the phase shift film, and the light shielding film has the same design concept. .
- the design concept of the conventional phase shift film and light-shielding film it is unavoidable that the ratio of atoms that are photoexcited among all the atoms constituting the film when irradiated with ArF exposure light is unavoidable. It is difficult to suppress the occurrence.
- the inventors In order to set the transmittance of the phase shift film with respect to ArF exposure light to a predetermined value, the inventors have set the reflectance (back surface reflectance) at the interface between the translucent substrate and the phase shift film as compared with the conventional phase shift film. It was considered that the ratio of silicon atoms photoexcited by ArF exposure light among all the silicon atoms constituting the phase shift film could be reduced by increasing the height.
- the amount of ArF exposure light reflected at the interface between the translucent substrate and the phase shift film is made higher than before, thereby allowing the phase shift film The amount of exposure light incident on the inside of the substrate can be reduced.
- the amount of ArF exposure light absorbed in the phase shift film is less than the conventional amount, the amount of ArF exposure light emitted from the phase shift film can be made equal to that of the conventional phase shift film.
- silicon atoms are less likely to be photoexcited inside the phase shift film, and it is possible to suppress intrusion of photoexcited chromium atoms from the light shielding film.
- the present inventors make the reflectance (back surface reflectance) at the interface between the phase shift film and the light shielding film higher than in the conventional case in order to ensure the light shielding performance of the light shielding film against ArF exposure light.
- the ratio of chromium atoms photoexcited by ArF exposure light among all the chromium atoms constituting the light shielding film could be reduced.
- phase shift film In order to increase the back surface reflectance of the phase shift film provided on the translucent substrate, at least the layer of the phase shift film in contact with the translucent substrate is made to have an extinction coefficient k (hereinafter simply referred to as extinction) at the wavelength of ArF exposure light. It is necessary to form with a material having a large coefficient k).
- a phase shift film having a single layer structure has a large refractive index n (hereinafter simply referred to as a refractive index n) at the wavelength of ArF exposure light, and has an extinction coefficient k because of the necessity to satisfy the required optical characteristics and film thickness. Is generally formed of a small material.
- phase shift film it is considered to increase the back surface reflectance of the phase shift film by adjusting the composition of the material forming the phase shift film to greatly increase the extinction coefficient k.
- the phase shift film cannot satisfy the transmittance condition within a predetermined range, so that the thickness of the phase shift film needs to be significantly reduced.
- the phase shift film cannot satisfy a predetermined range of phase difference conditions. Since there is a limit to increasing the refractive index n of the material forming the phase shift film, it is difficult to increase the back surface reflectance with a single phase shift film.
- the phase shift film was made into a laminated structure including a lower layer and an upper layer, and further examination was performed with a design concept that increases the back surface reflectance in the whole laminated structure.
- a material having a large refractive index n and a small extinction coefficient k is applied as in the case of the conventional single layer phase shift film.
- a material having a larger extinction coefficient k than that of the conventional phase shift film is applied to the lower layer on the light transmitting substrate side in the phase shift film. Since such a lower layer functions in the direction of decreasing the transmittance of the phase shift film, it is necessary to reduce the thickness of the lower layer.
- the refractive index n of the lower layer is made smaller than the refractive index n of the translucent substrate.
- a general method for increasing the reflectivity is to form a layer in contact with the upper layer of the phase shift film in the light shielding film with a material having a refractive index n larger than that of the upper layer of the phase shift film.
- a material having a refractive index n larger than that of the upper layer of the phase shift film it is necessary to contain more nitrogen.
- a material having a high nitrogen content tends to have a small extinction coefficient k, it is not preferable for a layer for forming a light shielding film.
- the layer in contact with the upper layer of the phase shift film in the light shielding film is made of a material having an extinction coefficient k larger than that of the phase shift film and a smaller refractive index n.
- the present invention is a mask blank having a structure in which a phase shift film and a light shielding film are laminated in this order on a translucent substrate, and further having the following characteristics.
- the phase shift film has a function of transmitting ArF excimer laser exposure light with a transmittance of 2% to 30%, and the exposure light transmitted through the phase shift film is in the air by the same distance as the thickness of the phase shift film.
- the phase shift film is formed of a material containing silicon and substantially not containing chromium, and includes a structure in which a lower layer and an upper layer are stacked from the translucent substrate side.
- the lower layer of the phase shift film has a lower refractive index n at the wavelength of the exposure light than the translucent substrate.
- the upper layer of the phase shift film has a higher refractive index n at the wavelength of the exposure light than the translucent substrate.
- the lower layer of the phase shift film has a larger extinction coefficient k at the wavelength of the exposure light than the upper layer.
- the light shielding film includes a layer in contact with the phase shift film.
- the layer in contact with the phase shift film is made of a material containing chromium, and has a refractive index n smaller than that of the upper layer at the wavelength of the exposure light and a larger extinction coefficient k at the wavelength of the exposure light than that of the upper layer.
- FIG. 1 is a cross-sectional view showing a configuration of a mask blank 100 according to an embodiment of the present invention.
- a mask blank 100 of the present invention shown in FIG. 1 has a structure in which a phase shift film 2, a light shielding film 3, and a hard mask film 4 are laminated in this order on a translucent substrate 1.
- the translucent substrate 1 can be formed of synthetic quartz glass, quartz glass, aluminosilicate glass, soda lime glass, low thermal expansion glass (SiO 2 —TiO 2 glass or the like) and the like.
- synthetic quartz glass has a high transmittance with respect to ArF excimer laser light, and is particularly preferable as a material for forming the translucent substrate 1 of the mask blank 100.
- the refractive index n of the material forming the translucent substrate 1 at the wavelength of ArF exposure light (about 193 nm) is preferably 1.50 or more and 1.60 or less, and 1.52 or more and 1.59 or less. More preferably, it is 1.54 or more and 1.58 or less.
- the phase shift film 2 is required to have a transmittance with respect to ArF exposure light of 2% or more.
- the transmittance with respect to the exposure light is required to be at least 2%.
- the transmittance of the phase shift film 2 with respect to exposure light is preferably 3% or more, and more preferably 4% or more.
- the transmittance with respect to the exposure light of the phase shift film 2 is preferably 30% or less, more preferably 20% or less, and further preferably 10% or less.
- the phase shift film 2 has a phase difference of 150 between the transmitted ArF exposure light and the light that has passed through the air by the same distance as the thickness of the phase shift film 2. It is required to be adjusted to be in the range of not less than 200 degrees and not more than 200 degrees.
- the phase difference in the phase shift film 2 is preferably 155 degrees or more, and more preferably 160 degrees or more.
- the phase difference in the phase shift film 2 is preferably 190 degrees or less, more preferably 180 degrees or less, and further preferably 179 degrees or less. This is to reduce the influence of an increase in phase difference caused by minute etching of the translucent substrate 1 during dry etching when forming a pattern on the phase shift film 2.
- ArF exposure light is applied to the phase shift mask by an exposure apparatus, and the number of ArF exposure light incident from a direction inclined at a predetermined angle with respect to the direction perpendicular to the film surface of the phase shift film 2 is increasing. It is because it is.
- the mask blank 100 preferably has a reflectance (back surface reflectance) of 30% or more when ArF exposure light is irradiated from the translucent substrate 1 side in a state where the phase shift film 2 and the light shielding film 3 are laminated. .
- a reflectance back surface reflectance
- photoexcitation of silicon atoms in the phase shift film 2 can be suppressed, and photoexcitation of chromium atoms in the light shielding film 3 can be suppressed.
- This suppression effect can suppress chromium migration, which is a phenomenon in which chromium atoms in the light shielding film 3 move into the phase shift film 2.
- the back surface reflectance is preferably 45% or less, and more preferably 40% or less.
- the phase shift film 2 has a structure in which a lower layer 21 and an upper layer 22 are laminated from the translucent substrate 1 side.
- the entire phase shift film 2 must satisfy the above-described conditions of transmittance and phase difference, and the back surface reflectance in the laminated structure with the light shielding film 3 must satisfy the above conditions.
- at least the refractive index n of the lower layer 21 in the phase shift film 2 is required to be smaller than the refractive index n of the translucent substrate 1.
- at least the refractive index n of the upper layer 22 is required to be larger than the refractive index n of the translucent substrate 1.
- the extinction coefficient k of the lower layer 21 is required to be at least larger than the extinction coefficient k of the upper layer 22.
- the upper layer 22 is preferably thicker than the lower layer 21.
- the refractive index n of the lower layer 21 is required to be 1.50 or less.
- the refractive index n of the lower layer 21 is preferably 1.45 or less, and more preferably 1.40 or less. Further, the refractive index n of the lower layer 21 is preferably 1.00 or more, and more preferably 1.10 or more.
- the extinction coefficient k of the lower layer 21 is required to be 2.00 or more.
- the extinction coefficient k of the lower layer 21 is preferably 2.20 or more, and more preferably 2.40 or more. Moreover, the extinction coefficient k of the lower layer 21 is preferably 3.30 or less, and more preferably 3.10 or less.
- the refractive index n and the extinction coefficient k of the lower layer 21 are values derived by regarding the entire lower layer 21 as one optically uniform layer.
- the refractive index n of the upper layer 22 is required to be larger than 2.00.
- the refractive index n of the upper layer 22 is preferably 2.10 or more. Further, the refractive index n of the upper layer 22 is preferably 3.00 or less, and more preferably 2.80 or less.
- the extinction coefficient k of the upper layer 22 is required to be 0.80 or less.
- the extinction coefficient k of the upper layer 22 is preferably 0.60 or less, and more preferably 0.50 or less. Further, the extinction coefficient k of the upper layer 22 is preferably 0.10 or more, and more preferably 0.20 or more. Note that the refractive index n and the extinction coefficient k of the upper layer 22 are values derived by regarding the entire upper layer 22 including a surface layer portion described later as one optically uniform layer.
- the refractive index n and extinction coefficient k of the thin film including the phase shift film 2 are not determined only by the composition of the thin film.
- the film density and crystal state of the thin film are factors that influence the refractive index n and the extinction coefficient k. For this reason, various conditions when forming a thin film by reactive sputtering are adjusted, and the thin film is formed so as to have a desired refractive index n and extinction coefficient k.
- a mixture of a rare gas and a reactive gas oxygen gas, nitrogen gas, etc.
- the total thickness of the phase shift film 2 is desirably less than 100 nm.
- a bias relating to an electromagnetic field (EMF) effect is small. This is because it is effective to reduce the thickness of the thin film pattern of the phase shift mask in order to reduce the EMF bias.
- the thickness of the lower layer 21 is preferably less than 10 nm, more preferably 9 nm or less, and further 8 nm or less. preferable.
- the thickness of the lower layer 21 is preferably 3 nm or more, more preferably 4 nm or more, and further preferably 5 nm or more.
- the thickness of the upper layer 22 is preferably 9 times or more that of the lower layer 21, and 10 times or more. Is more preferable.
- the thickness of the upper layer 22 is preferably 15 times or less, more preferably 13 times or less the thickness of the lower layer 21.
- the thickness of the upper layer 22 is preferably 90 nm or less, and more preferably 80 nm or less.
- the phase shift film 2 is formed of a material in which the lower layer 21 and the upper layer 22 both contain silicon and do not substantially contain chromium.
- the phase shift film 2 preferably further contains a metal element excluding chromium.
- the metal element contained in the material forming the phase shift film 2 is preferably a transition metal element.
- transition metal elements molybdenum (Mo), tantalum (Ta), tungsten (W), titanium (Ti), hafnium (Hf), nickel (Ni), vanadium (V), zirconium (Zr), ruthenium Any one or more metal elements of (Ru), rhodium (Rh), zinc (Zn), niobium (Nb), and palladium (Pd) can be used.
- examples of the metal element other than the transition metal element contained in the material forming the phase shift film 2 include aluminum (Al), indium (In), tin (Sn), and gallium (Ga).
- the material forming the phase shift film 2 may include elements such as carbon (C), hydrogen (H), boron (B), germanium (Ge), and antimony (Sb) in addition to the above-described elements.
- the material forming the lower layer 21 may include an inert gas such as helium (He), argon (Ar), krypton (Kr), and xenon (Xe).
- the lower layer 21 of the phase shift film 2 is preferably formed of a material containing a metal excluding chromium and silicon and substantially not containing chromium and oxygen.
- a material having a large extinction coefficient k On the other hand, when the oxygen content in the material is increased, the degree of decrease in the extinction coefficient k becomes very large, which is not preferable. For this reason, the lower layer 21 needs to be a material which does not contain oxygen substantially.
- the material which does not substantially contain oxygen is a material whose oxygen content in the material is at least 5 atomic% or less.
- the oxygen content of the material formed by the lower layer 21 is preferably 3 atomic% or less, and more preferably the detection lower limit value or less when composition analysis is performed by X-ray photoelectron spectroscopy or the like.
- the material forming the lower layer 21 may contain nitrogen. However, as the nitrogen content in the material is increased, the refractive index n of the material tends to increase. Further, although not as much as in the case of oxygen, the extinction coefficient k tends to decrease as the nitrogen content in the material is increased.
- the material forming the lower layer 21 is preferably a material having a small refractive index n and a large extinction coefficient k. Accordingly, the nitrogen content in the case where the lower layer 21 is formed of a material made of metal, silicon and nitrogen is preferably 20 atomic% or less, more preferably 19 atomic% or less, and more preferably 15 atomic%. More preferably, it is as follows.
- the nitrogen content of the material forming the lower layer 21 in this case is preferably 5 atomic% or more, and more preferably 10 atomic% or more.
- the lower layer 21 is more preferably formed of a material consisting of a metal excluding chromium and silicon, or a material consisting of a metal excluding chromium, silicon and nitrogen, and is formed of a material consisting of a metal excluding chromium and silicon. And more preferred.
- the lower layer 21 is preferably formed in contact with the surface of the translucent substrate 1. This is because, when the lower layer 21 is in contact with the surface of the translucent substrate 1, the above-described effect of increasing the back surface reflectance caused by the laminated structure of the lower layer 21 and the upper layer 22 of the phase shift film 2 is obtained.
- An etching stopper film may be provided between the translucent substrate 1 and the phase shift film 2 if the influence on the effect of increasing the back surface reflectance of the phase shift film 2 is very small. In this case, the thickness of the etching stopper needs to be 10 nm or less, preferably 7 nm or less, and more preferably 5 nm or less.
- the thickness of the etching stopper film needs to be 3 nm or more.
- the extinction coefficient k of the material forming the etching stopper film needs to be less than 0.1, preferably 0.05 or less, and more preferably 0.01 or less.
- the refractive index n of the material forming the etching stopper film is required to be at least 1.9 or less, and is preferably 1.7 or less.
- the refractive index n of the material forming the etching stopper film is preferably 1.55 or more.
- the upper layer 22 of the phase shift film 2 is preferably formed of a material containing a metal excluding chromium, silicon, nitrogen, and oxygen and substantially not containing chromium and oxygen. Since the lower layer 21 of the phase shift film 2 needs to be formed of a material having a large extinction coefficient k, the upper layer 22 needs to actively contain not only nitrogen but also oxygen. Considering this point, the oxygen content of the material forming the upper layer 22 is preferably more than 5 atomic%, more preferably 10 atomic% or more, and further preferably 12 atomic% or more. Oxygen tends to decrease both the refractive index n and the extinction coefficient k of the material as the content in the material increases.
- the oxygen content of the material forming the upper layer 22 is preferably 30 atomic percent or less, more preferably 25 atomic percent or less, and further preferably 20 atomic percent or less.
- the nitrogen content of the material forming the upper layer 22 is preferably 20 atomic% or more, more preferably 25 atomic% or more, and further preferably 30 atomic% or more.
- the nitrogen content of the material formed by the upper layer 22 is preferably 50 atomic percent or less, more preferably 45 atomic percent or less, and even more preferably 40 atomic percent or less.
- Ratio [%] obtained by dividing the metal content [atomic%] in the material forming the upper layer 22 by the total content [atomic%] of metal and silicon (hereinafter, this ratio is referred to as “M / [M + Si] ratio”). ) Is required to be smaller than the M / [M + Si] ratio in the lower layer 21.
- M / [M + Si] ratio in the material is in the range of 0 to about 34%, both the refractive index n and the extinction coefficient k tend to increase as the M / [M + Si] ratio increases.
- the upper layer 22 it is necessary to use a material having a tendency that the refractive index n is large and the extinction coefficient k is small, and it is preferable to use a material having a small M / [M + Si] ratio in the material.
- the lower layer 21 it is necessary to use a material having a refractive index n and a tendency for the extinction coefficient k to be large, and it is preferable to apply a material having a somewhat high M / [M + Si] ratio in the material.
- the difference obtained by subtracting the M / [M + Si] ratio in the upper layer 22 from the M / [M + Si] ratio in the lower layer 21 is preferably at least 1% or more.
- the difference obtained by subtracting the M / [M + Si] ratio in the upper layer 22 from the M / [M + Si] ratio in the lower layer 21 is preferably at least 10% or less, and more preferably 8% or less.
- the M / [M + Si] ratio in the material forming the lower layer 21 is required to be at least 8% or more, preferably 9% or more, and more preferably 10% or more.
- the M / [M + Si] ratio in the material forming the lower layer 21 is required to be at least 20% or less, preferably 15% or less, and more preferably 12% or less.
- the material forming the upper layer 22 of the phase shift film 2 does not contain a metal element that contributes to increasing both the refractive index n and the extinction coefficient k, the overall thickness of the phase shift film 2 increases. The problem arises.
- the M / [M + Si] ratio in the upper layer 22 is preferably 2% or more, and more preferably 3% or more.
- the M / [M + Si] ratio in the upper layer 22 is preferably 9% or less, and 8% or less. It is more preferable.
- Both the material forming the lower layer 21 and the material forming the upper layer 22 preferably contain the same metal element.
- the upper layer 22 and the lower layer 21 are patterned by dry etching using the same etching gas. For this reason, it is desirable to etch the upper layer 22 and the lower layer 21 in the same etching chamber. If the metal elements contained in the materials forming the upper layer 22 and the lower layer 21 are the same, it is possible to reduce environmental changes in the etching chamber when the object to be dry etched from the upper layer 22 to the lower layer 21 changes. it can.
- the lower layer 21 and the upper layer 22 in the phase shift film 2 are formed by sputtering, but any sputtering such as DC sputtering, RF sputtering, and ion beam sputtering is applicable. In consideration of the deposition rate, it is preferable to apply DC sputtering. In the case of using a target with low conductivity, it is preferable to apply RF sputtering or ion beam sputtering, but it is more preferable to apply RF sputtering in consideration of the film formation rate.
- any sputtering such as DC sputtering, RF sputtering, and ion beam sputtering is applicable. In consideration of the deposition rate, it is preferable to apply DC sputtering. In the case of using a target with low conductivity, it is preferable to apply RF sputtering or ion beam sputtering, but it is more preferable to apply RF sputtering in
- the lower layer 21 and the upper layer 22 cannot be formed by the same single target. This is because the M / [M + Si] ratio of the lower layer 21 and the upper layer 22 is different.
- the lower layer 21 and the upper layer 22 may be formed with two targets having different M / [M + Si] ratios, they may be formed in the same film forming chamber or in different film forming chambers.
- the lower layer 21 and the upper layer 22 may be formed using a silicon target and a metal silicide target, and the lower layer 21 and the upper layer 22 having different M / [M + Si] ratios are formed by sputtering that changes a voltage applied to each target.
- the film forming chambers are connected to each other through, for example, different vacuum chambers.
- a transfer device robot hand for transferring the translucent substrate 1 between the load lock chamber, the vacuum chamber, and each film forming chamber.
- the upper layer 22 preferably has a layer having a higher oxygen content than the upper layer 22 excluding the surface layer (hereinafter simply referred to as a surface oxide layer).
- a surface oxide layer As a method of forming the surface oxide layer of the upper layer 22, various oxidation treatments can be applied.
- this oxidation treatment for example, a heat treatment in a gas containing oxygen such as in the atmosphere, a light irradiation treatment with a flash lamp or the like in a gas containing oxygen, a treatment in which ozone or oxygen plasma is brought into contact with the surface layer of the upper layer 22 Etc.
- the surface oxide layer of the upper layer 22 preferably has a thickness of 1 nm or more, and more preferably 1.5 nm or more.
- the surface oxide layer of the upper layer 22 preferably has a thickness of 5 nm or less, more preferably 3 nm or less.
- the refractive index n and extinction coefficient k of the upper layer 22 are average values of the entire upper layer 22 including the surface oxide layer. Since the ratio of the surface oxide layer in the upper layer 22 is considerably small, the influence of the presence of the surface oxide layer on the refractive index n and the extinction coefficient k of the entire upper layer 22 is small.
- the lower layer 21 may be formed of a material made of silicon, or a material containing one or more elements selected from non-metal elements and metalloid elements excluding oxygen in a material made of silicon.
- This lower layer 21 may contain any metalloid element in addition to silicon.
- these metalloid elements it is preferable to include one or more elements selected from boron, germanium, antimony, and tellurium because it can be expected to increase the conductivity of silicon used as a sputtering target.
- the lower layer 21 may contain a nonmetallic element other than oxygen. Among these nonmetallic elements, it is preferable to contain one or more elements selected from nitrogen, carbon, fluorine and hydrogen. This nonmetallic element also includes rare gases such as helium (He), argon (Ar), krypton (Kr), and xenon (Xe).
- the lower layer 21 does not actively contain oxygen (the oxygen content is preferably not more than the lower limit of detection when composition analysis is performed by X-ray photoelectron spectroscopy or the like). This is because the lowering of the extinction coefficient k of the lower layer 21 caused by containing oxygen in the material forming the lower layer 21 is larger than that of other nonmetallic elements, and the back surface reflectance of the phase shift film 2 is not greatly reduced. .
- the lower layer 21 is preferably formed of a material containing silicon and nitrogen, or a material containing one or more elements selected from nonmetallic elements and metalloid elements excluding oxygen in a material consisting of silicon and nitrogen. This is because the silicon-containing material containing nitrogen has higher light resistance to ArF exposure light than the silicon-containing material not containing nitrogen. Moreover, it is because the oxidation of the pattern side wall when the phase shift pattern is formed in the lower layer 21 is suppressed. However, as the nitrogen content in the material forming the lower layer 21 increases, the refractive index n increases and the extinction coefficient k decreases. For this reason, the nitrogen content in the material forming the lower layer 21 is preferably 40 atomic percent or less, more preferably 36 atomic percent or less, and even more preferably 32 atomic percent or less.
- the upper layer 22 is formed of a material made of silicon and nitrogen, or a material containing one or more elements selected from non-metal elements and metalloid elements excluding oxygen in a material made of silicon and nitrogen, except for the surface layer portion. .
- the surface layer portion of the upper layer 22 refers to the surface layer portion on the opposite side of the upper layer 22 from the lower layer 21 side.
- the oxidation of the surface layer portion of the upper layer 22 also proceeds when the phase shift film 2 is exposed to the atmosphere or heat treatment is performed in the atmosphere.
- the upper layer 22 is preferably a material having a high refractive index n. Since the refractive index n tends to decrease as the oxygen content in the material increases, oxygen is not actively contained in the upper layer 22 during film formation except for the surface layer portion (the oxygen content is X When the composition analysis is performed by linear photoelectron spectroscopy or the like, the lower limit of detection is preferable. From these things, the surface layer part of the upper layer 22 is formed with the material which added oxygen to the material which forms the upper layer 22 except a surface layer part.
- the surface layer portion of the upper layer 22 may be formed by the various oxidation treatments described above.
- the upper layer 22 may contain any metalloid element in addition to silicon.
- metalloid elements it is preferable to include one or more elements selected from boron, germanium, antimony, and tellurium because it can be expected to increase the conductivity of silicon used as a sputtering target.
- the upper layer 22 may contain a nonmetallic element other than oxygen. Among these nonmetallic elements, it is preferable to contain one or more elements selected from nitrogen, carbon, fluorine and hydrogen. This nonmetallic element also includes rare gases such as helium (He), argon (Ar), krypton (Kr), and xenon (Xe).
- the upper layer 22 is preferably a material having a higher refractive index n, and the silicon-based material tends to have a higher refractive index n as the nitrogen content increases. For this reason, it is preferable that the total content of the metalloid element and the nonmetal element contained in the material forming the upper layer 22 is 10 atomic% or less, more preferably 5 atomic% or less, and not actively contained. Further preferred.
- the nitrogen content in the material forming the upper layer 22 is required to be at least higher than the nitrogen content in the material forming the lower layer 21.
- the nitrogen content in the material forming the upper layer 22 is preferably more than 50 atomic%, more preferably 52 atomic% or more, and further preferably 55 atomic% or more.
- both the material forming the lower layer 21 and the material forming the upper layer 22 excluding the surface layer portion are composed of the same element.
- the upper layer 22 and the lower layer 21 are patterned by dry etching using the same etching gas. For this reason, it is desirable to etch the upper layer 22 and the lower layer 21 in the same etching chamber. If the elements constituting each material forming the upper layer 22 and the lower layer 21 are the same, the environmental change in the etching chamber when the object to be dry-etched from the upper layer 22 to the lower layer 21 changes can be reduced. it can.
- the ratio of the etching rate of the lower layer 21 to the etching rate of the upper layer 22 is preferably 3.0 or less, and is 2.5 or less. More preferred. Further, when the phase shift film 2 is patterned by dry etching with the same etching gas, the ratio of the etching rate of the lower layer 21 to the etching rate of the upper layer 22 is preferably 1.0 or more.
- the mask blank 100 includes a light shielding film 3 on the phase shift film 2.
- the outer peripheral region of a region where a transfer pattern is formed (transfer pattern forming region) is transmitted through the outer peripheral region when exposed and transferred to a resist film on a semiconductor wafer using an exposure device. It is required to secure an optical density (OD) of a predetermined value or higher so that the resist film is not affected by exposure light. This also applies to the phase shift mask.
- the OD is preferably 2.8 or more, and more preferably 3.0 or more.
- the phase shift film 2 has a function of transmitting exposure light with a predetermined transmittance, and it is difficult to ensure a predetermined optical density with the phase shift film 2 alone. For this reason, it is necessary to laminate the light shielding film 3 on the phase shift film 2 at the stage of manufacturing the mask blank 100 in order to ensure an insufficient optical density.
- the light shielding film 3 in the region (basically the transfer pattern forming region) where the phase shift effect is used is removed in the course of manufacturing the phase shift mask 200 (see FIG. 2). By doing so, it is possible to manufacture the phase shift mask 200 in which an optical density of a predetermined value is secured in the outer peripheral region.
- the light shielding film 3 includes at least a layer in contact with the phase shift film 2 (upper layer 22).
- the single-layer light shielding film 3 itself corresponds to a layer in contact with the phase shift film 2 (upper layer 22).
- the lowermost layer corresponds to a layer in contact with the phase shift film 2 (upper layer 22).
- the layer in contact with the phase shift film 2 of the light shielding film 3 is formed of a material containing chromium.
- a material containing chromium that forms a layer in contact with the phase shift film 2 of the light shielding film 3 in addition to chromium metal, a material containing one or more elements selected from oxygen, nitrogen, carbon, boron, and fluorine in addition to chromium metal. Can be mentioned.
- a chromium-based material is etched with a mixed gas of a chlorine-based gas and an oxygen gas, but chromium metal does not have a very high etching rate with respect to this etching gas.
- the material for forming the light shielding film 3 is one or more elements selected from chromium, oxygen, nitrogen, carbon, boron and fluorine.
- a material containing is preferred.
- you may make the material containing chromium which forms the light shielding film 3 contain one or more elements among molybdenum, indium, and tin. By including one or more elements of molybdenum, indium and tin, the etching rate for the mixed gas of chlorine-based gas and oxygen gas can be further increased.
- the layer in contact with the phase shift film 2 of the light shielding film 3 is required to be smaller than the refractive index n of the upper layer 22 of the phase shift film 2.
- the refractive index n of the layer in contact with the phase shift film 2 of the light shielding film 3 is preferably 2.00 or less, more preferably less than 2.00, and even more preferably 1.95 or less.
- the layer in contact with the phase shift film 2 of the light shielding film 3 is required to be larger than the extinction coefficient k of the upper layer 22 of the phase shift film 2.
- the extinction coefficient k of the layer in contact with the phase shift film 2 of the light shielding film 3 is preferably 1.00 or more, more preferably 1.10 or more, and further preferably 1.20 or more.
- the back surface reflectance for ArF exposure light can be 30% or more. Thereby, photoexcitation of silicon atoms in the phase shift film 2 can be suppressed, and photoexcitation of chromium atoms in the light shielding film 3 can be suppressed.
- the light shielding film 3 has a laminated structure of two or more layers
- various materials can be applied to the layers other than the layer (lowermost layer) in contact with the phase shift film 2 of the light shielding film 3.
- the above-described material containing chromium can be applied.
- transition metals to be contained in layers other than the lowermost layer of the light shielding film 3 molybdenum (Mo), tantalum (Ta), tungsten (W), titanium (Ti), hafnium (Hf), nickel (Ni), vanadium (V ), Zirconium (Zr), ruthenium (Ru), rhodium (Rh), zinc (Zn), niobium (Nb), palladium (Pd), or an alloy of these metals.
- the metal element other than the transition metal element contained in a layer other than the lowermost layer of the light shielding film 3 include aluminum (Al), indium (In), tin (Sn), and gallium (Ga).
- a hard mask film 4 formed of a material having etching selectivity with respect to an etching gas used when the light shielding film 3 is etched is further laminated on the light shielding film 3. Since the hard mask film 4 is basically not restricted by the optical density, the thickness of the hard mask film 4 can be made much thinner than the thickness of the light shielding film 3.
- the resist film made of an organic material is sufficient to have a thickness sufficient to function as an etching mask until dry etching for forming a pattern on the hard mask film 4 is completed. The thickness can be greatly reduced. Thinning the resist film is effective in improving resist resolution and preventing pattern collapse, and is extremely important in meeting the demand for miniaturization.
- the hard mask film 4 is preferably formed of a material containing silicon. Since the hard mask film 4 in this case tends to have low adhesion to the organic material resist film, the surface of the hard mask film 4 is subjected to HMDS (Hexamethyldisilazane) treatment to improve surface adhesion. It is preferable. In this case, the hard mask film 4 is more preferably formed of SiO 2 , SiN, SiON or the like.
- a material containing tantalum is also applicable as the material of the hard mask film 4 when the light shielding film 3 is formed of a material containing chromium.
- the material containing tantalum in this case include a material in which tantalum contains one or more elements selected from nitrogen, oxygen, boron, and carbon in addition to tantalum metal. Examples thereof include Ta, TaN, TaO, TaON, TaBN, TaBO, TaBON, TaCN, TaCO, TaCON, TaBCN, TaBOCN, and the like.
- the hard mask film 4 is preferably formed of the above-described material containing chromium.
- a resist film of an organic material is formed with a thickness of 100 nm or less in contact with the surface of the hard mask film 4.
- SRAF Sub-Resolution Assist Feature
- a transfer pattern phase shift pattern
- FIG. 2 shows the phase shift mask 200 according to the embodiment of the present invention manufactured from the mask blank 100 of the above embodiment and the manufacturing process thereof.
- the phase shift pattern 2 a that is a transfer pattern is formed on the phase shift film 2 of the mask blank 100
- the light shielding pattern 3 b is formed on the light shielding film 3. It is characterized by having.
- the hard mask film 4 is provided on the mask blank 100, the hard mask film 4 is removed while the phase shift mask 200 is being formed.
- the method of manufacturing the phase shift mask 200 according to the embodiment of the present invention uses the mask blank 100 described above.
- the step of forming a transfer pattern on the light shielding film 3 by dry etching, and the light shielding film 3 having the transfer pattern are provided.
- a second resist pattern 6b which is a resist film having a light shielding pattern
- phase shift mask 200 using the mask blank 100 in which the hard mask film 4 is laminated on the light shielding film 3
- a material containing chromium is applied to all layers of the light shielding film 3 including a layer in contact with the phase shift film 2 and a material containing silicon is applied to the hard mask film 4
- a resist film is formed by spin coating in contact with the hard mask film 4 in the mask blank 100.
- a first pattern which is a transfer pattern (phase shift pattern) to be formed on the phase shift film 2
- a predetermined process such as a development process is further performed.
- a first resist pattern 5a having a shift pattern was formed (see FIG. 2A).
- dry etching using a fluorine-based gas was performed using the first resist pattern 5a as a mask to form a first pattern (hard mask pattern 4a) on the hard mask film 4 (see FIG. 2B). .
- a resist film was formed on the mask blank 100 by a spin coating method.
- a second pattern which is a pattern (light-shielding pattern) to be formed on the light-shielding film 3
- a predetermined process such as a development process is performed to provide a light-shielding pattern.
- a second resist pattern 6b was formed (see FIG. 2E).
- dry etching using a mixed gas of chlorine-based gas and oxygen gas is performed using the second resist pattern 6b as a mask to form a second pattern (light-shielding pattern 3b) on the light-shielding film 3 (FIG. 2 ( f)).
- the second resist pattern 6b was removed, and a predetermined process such as cleaning was performed to obtain a phase shift mask 200 (see FIG. 2G).
- the chlorine-based gas used in the dry etching is not particularly limited as long as it contains Cl.
- Cl 2 , SiCl 2 , CHCl 3 , CH 2 Cl 2 , CCl 4 , BCl 3 and the like can be mentioned.
- the fluorine-based gas used in the dry etching is not particularly limited as long as F is contained.
- F for example, CHF 3, CF 4, C 2 F 6, C 4 F 8, SF 6 and the like.
- the fluorine-based gas not containing C has a relatively low etching rate with respect to the glass substrate, damage to the glass substrate can be further reduced.
- the phase shift mask 200 of the present invention is manufactured using the mask blank 100 described above.
- the phase shift film 2 (phase shift pattern 2a) on which the transfer pattern is formed has a transmittance with respect to ArF exposure light in the range of 2% to 30%, and exposure light transmitted through the phase shift pattern 2a.
- the phase difference between the exposure light that has passed through the air by the same distance as the thickness of the phase shift pattern 2a is in the range of 150 degrees to 200 degrees (more preferably, 150 degrees to 180 degrees).
- the phase shift mask 200 has a back surface reflectance of 30% or more in the region on the translucent substrate 1 of the phase shift pattern 2a in which the light shielding patterns 3b are laminated.
- the photoexcitation of the silicon atom in the phase shift pattern 2a can be suppressed, and the photoexcitation of the chromium atom in the light shielding pattern 3b can be suppressed. Furthermore, chromium migration, which is a phenomenon in which chromium atoms in the light shielding pattern 3b move into the phase shift pattern 2a, can be suppressed.
- the phase shift mask 200 preferably has a back surface reflectance of 45% or less in a region on the translucent substrate 1 of the phase shift pattern 2a in which the light shielding patterns 3b are stacked.
- an object to be transferred such as a resist film on a semiconductor wafer
- the reflected light on the back side of the phase shift pattern 2a does not affect the exposure transfer image. It is to do.
- the method for manufacturing a semiconductor device of the present invention is characterized in that a transfer pattern is exposed and transferred onto a resist film on a semiconductor substrate using the phase shift mask 200 described above.
- the phase shift pattern 2a of the phase shift mask 200 can greatly suppress the influence of chromium migration.
- the phase shift mask 200 is set in an exposure apparatus, and ArF exposure light is irradiated from the light transmissive substrate 1 side of the phase shift mask 200 to an object to be transferred (such as a resist film on a semiconductor wafer). Even if the process is continuously performed, a desired pattern can be continuously transferred to the transfer object with high accuracy.
- Example 1 Manufacture of mask blanks
- a translucent substrate 1 made of synthetic quartz glass having a main surface dimension of about 152 mm ⁇ about 152 mm and a thickness of about 6.35 mm was prepared.
- This translucent substrate 1 has its end face and main surface polished to a predetermined surface roughness, and then subjected to a predetermined cleaning process and drying process.
- the refractive index n was 1.56 and the extinction coefficient k was 0.00.
- DC sputtering reactive sputtering
- He helium
- the lower layer 21 (MoSi film) of the phase shift film 2 made of molybdenum and silicon is formed on the translucent substrate 1. It was formed with a thickness of 7 nm.
- the upper layer 22 (MoSiON film) of the phase shift film 2 made of silicon, nitrogen and oxygen was formed to a thickness of 72 nm.
- a heat treatment for reducing the film stress of the phase shift film 2 and forming an oxide layer on the surface layer was performed on the translucent substrate 1 on which the phase shift film 2 was formed. Specifically, using a heating furnace (electric furnace), heat treatment was performed in the atmosphere at a heating temperature of 450 ° C. and a heating time of 1 hour. A phase shift film 2 in which a lower layer 21 and an upper layer 22 were laminated under the same conditions on the main surface of another translucent substrate 1 and heat-treated was prepared. Using a phase shift amount measuring device (MPM193, manufactured by Lasertec Corporation), the transmittance and phase difference of the phase shift film 2 with respect to light having a wavelength of 193 nm were measured.
- MPM193 manufactured by Lasertec Corporation
- the transmittance was 6.0% and the phase difference was 170.0. Degree.
- the phase shift film 2 was analyzed by STEM (Scanning Electron Microscope) and EDX (Energy Dispersive X-Ray Spectroscopy). As a result, the thickness of the upper layer 22 of the phase shift film 2 was about 1.7 nm. Thus, it was confirmed that an oxide layer was formed. Further, when the optical characteristics of the lower layer 21 and the upper layer 22 of the phase shift film 2 were measured, the lower layer 21 had a refractive index n of 1.15 and an extinction coefficient k of 2.90, and the upper layer 22 had a refractive index. n was 2.38 and the extinction coefficient k was 0.31.
- %: 22 atomic%: 12 atomic%: 11 atomic%) was formed with a thickness of 46 nm.
- This mask blank 100 has a back surface reflectance (reflectance on the side of the light-transmitting substrate 1) of 40.9% with respect to light having a wavelength of 193 nm when the phase shift film 2 and the light-shielding film 3 are laminated on the light-transmitting substrate 1.
- the optical density (OD) of light having a wavelength of 193 nm in the laminated structure of the phase shift film 2 and the light shielding film 3 was measured and found to be 3.0 or more.
- another light-transmitting substrate 1 was prepared, and only the light-shielding film 3 was formed under the same film-forming conditions, and the optical characteristics of the light-shielding film 3 were measured.
- the refractive index n was 1.95, the extinction coefficient. k was 1.53.
- the composition of the light shielding film 3 is a result obtained by measurement by X-ray photoelectron spectroscopy (XPS). The same applies to other films.
- the translucent substrate 1 in which the phase shift film 2 and the light-shielding film 3 are laminated is placed in a single wafer RF sputtering apparatus, and argon (Ar) gas is sputtered using a silicon dioxide (SiO 2 ) target.
- a hard mask film 4 made of silicon and oxygen was formed to a thickness of 5 nm on the light shielding film 3 by RF sputtering using gas.
- phase shift mask 200 of Example 1 was produced according to the following procedure. First, the surface of the hard mask film 4 was subjected to HMDS treatment. Subsequently, a resist film made of a chemically amplified resist for electron beam drawing with a film thickness of 80 nm was formed in contact with the surface of the hard mask film 4 by spin coating. Next, a first pattern which is a phase shift pattern to be formed on the phase shift film 2 is drawn on the resist film by electron beam, a predetermined development process and a cleaning process are performed, and a first pattern having the first pattern is obtained. 1 resist pattern 5a was formed (see FIG. 2A).
- the first resist pattern 5a was removed.
- dry etching using fluorine-based gas SF 6 + He is performed to form a first pattern (phase shift pattern 2a) on the phase shift film 2, and at the same time, a hard mask pattern 4a was removed (see FIG. 2 (d)).
- a resist film made of a chemically amplified resist for electron beam lithography was formed on the light-shielding pattern 3a with a film thickness of 150 nm by spin coating.
- a second pattern which is a pattern to be formed on the light shielding film (light shielding band pattern)
- a predetermined process such as a development process is further performed, so that the second pattern having the light shielding pattern A resist pattern 6b was formed (see FIG. 2E).
- the second resist pattern 6b was removed, and a predetermined process such as cleaning was performed to obtain a phase shift mask 200 (see FIG. 2G).
- Irradiation treatment in which ArF excimer laser light is intermittently irradiated to the region of the phase shift pattern 2a in which the light shielding pattern 3b of the manufactured phase shift mask 200 of Example 1 is laminated so that the integrated dose becomes 40 kJ / cm 2. Went.
- the exposure transfer image was simulated when the exposure was transferred to the resist film on the semiconductor device with the exposure light having a wavelength of 193 nm using AIMS193 (manufactured by Carl Zeiss). went. When the exposure transfer image obtained by this simulation was verified, the design specifications were sufficiently satisfied.
- the phase shift mask 200 manufactured from the mask blank 100 of Example 1 is set in an exposure apparatus until exposure transfer with ArF excimer laser exposure light reaches an integrated dose of 40 kJ / cm 2. Even if it does, it can be said that exposure transfer can be performed with high precision to the resist film on the semiconductor device.
- phase shift pattern 2a was very small. From the above, even if the phase shift mask 200 manufactured from the mask blank 100 of Example 1 is irradiated with the ArF excimer laser exposure light on the phase shift pattern 2a on which the light shielding pattern 3b is laminated, It can be said that the phenomenon that the chromium in the light shielding pattern 3b moves into the phase shift pattern 2a (chrome migration) can be sufficiently suppressed.
- SIMS Secondary ⁇ ⁇ ⁇ Ion Mass Spectrometry
- Example 2 Manufacture of mask blanks
- the mask blank 100 of Example 2 was manufactured in the same procedure as in Example 1 except for the phase shift film 2.
- the phase shift film 2 of Example 2 the material and film thickness for forming the lower layer 21 and the upper layer 22 are changed.
- Mo molybdenum
- Si silicon
- a lower layer 21 (MoSiN film) of the film 2 was formed with a thickness of 7 nm.
- the upper layer 22 (MoSiON film) of the phase shift film 2 made of silicon, nitrogen and oxygen was formed to a thickness of 88 nm.
- Example 2 the heat treatment was performed on the phase shift film 2 of Example 2 under the same processing conditions as in Example 1.
- a phase shift film 2 of Example 2 was formed on the main surface of another translucent substrate 1 under the same conditions, and a heat treatment was prepared.
- a phase shift amount measuring device MPM193, manufactured by Lasertec Corporation
- the transmittance and phase difference of the phase shift film 2 with respect to light having a wavelength of 193 nm were measured.
- the transmittance was 6.0% and the phase difference was 170.4.
- Degree Further, when this phase shift film 2 was analyzed by STEM and EDX, it was confirmed that an oxide layer was formed with a thickness of about 1.6 nm from the surface of the upper layer 22 of the phase shift film 2. .
- the lower layer 21 had a refractive index n of 1.34 and an extinction coefficient k of 2.79, and the upper layer 22 had a refractive index.
- n was 2.13 and the extinction coefficient k was 0.28.
- the mask blank 100 of Example 2 was manufactured.
- the mask blank 100 has a back surface reflectance (reflectance on the side of the light-transmitting substrate 1) of 36.5% with respect to light having a wavelength of 193 nm when the phase shift film 2 and the light-shielding film 3 are laminated on the light-transmitting substrate 1.
- the optical density (OD) of light having a wavelength of 193 nm in the laminated structure of the phase shift film 2 and the light shielding film 3 was measured and found to be 3.0 or more.
- Irradiation treatment in which ArF excimer laser light is intermittently irradiated to the region of the phase shift pattern 2a in which the light-shielding pattern 3b of the manufactured phase shift mask 200 of Example 2 is laminated so that the integrated irradiation amount becomes 40 kJ / cm 2. Went.
- the exposure transfer image was simulated when the exposure was transferred to the resist film on the semiconductor device with the exposure light having a wavelength of 193 nm using AIMS193 (manufactured by Carl Zeiss). went. When the exposure transfer image obtained by this simulation was verified, the design specifications were sufficiently satisfied.
- the phase shift mask 200 manufactured from the mask blank 100 of Example 2 is set in an exposure apparatus until exposure transfer by exposure light of an ArF excimer laser is performed until the integrated irradiation amount becomes 40 kJ / cm 2. Even if it does, it can be said that exposure transfer can be performed with high precision to the resist film on the semiconductor device.
- phase shift mask 200 manufactured from the mask blank 100 of Example 2 is irradiated with the ArF excimer laser exposure light on the phase shift pattern 2a on which the light shielding pattern 3b is laminated. It can be said that the phenomenon that the chromium in the light shielding pattern 3b moves into the phase shift pattern 2a (chrome migration) can be sufficiently suppressed.
- Example 3 Manufacture of mask blanks
- the mask blank 100 of Example 3 was manufactured in the same procedure as Example 1 except for the light shielding film 3.
- the light shielding film 3 of Example 3 has a structure in which a lowermost layer (a layer in contact with the phase shift film 2) and an upper layer are stacked from the phase shift film 2 side.
- the translucent substrate 1 on which the phase shift film 2 is formed is installed in a single-wafer type DC sputtering apparatus, a chromium (Cr) target is used, and argon (Ar), nitrogen (N 2 ), dioxide dioxide is used.
- a chromium (Cr) target is used, and reactive sputtering (DC sputtering) using a mixed gas of argon (Ar) and nitrogen (N 2 ) as a sputtering gas is used to form chromium and nitrogen on the lowermost layer.
- the phase shift film 2 composed of the lower layer 21 of MoSi and the upper layer 22 of MoSiON, the light shielding film 3 composed of the lowermost layer of CrOCN and the upper layer of CrN, and the hard mask film 4 are laminated on the translucent substrate.
- a mask blank 100 of Example 3 having the above structure was manufactured.
- This mask blank 100 has a back surface reflectance (reflectance on the side of the light-transmitting substrate 1) of 40.9% with respect to light having a wavelength of 193 nm when the phase shift film 2 and the light-shielding film 3 are laminated on the light-transmitting substrate 1.
- a back surface reflectance reflectance on the side of the light-transmitting substrate 1
- the optical density (OD) of light having a wavelength of 193 nm in the laminated structure of the phase shift film 2 and the light shielding film 3 was measured and found to be 3.0 or more.
- Another light-transmitting substrate 1 was prepared, and only the light-shielding film 3 was formed under the same film-forming conditions, and the optical characteristics of the light-shielding film 3 were measured.
- the lowest layer of the light shielding film 3 had a refractive index n of 1.78 and an extinction coefficient k of 1.20.
- the upper layer of the light shielding film 3 had a refractive index n of 1.55 and an extinction coefficient k of 1.68.
- phase shift mask 200 of Example 3 was produced in the same procedure as in Example 1.
- Irradiation treatment in which ArF excimer laser light is intermittently irradiated to the region of the phase shift pattern 2a in which the light shielding pattern 3b of the manufactured phase shift mask 200 of Example 3 is laminated so that the integrated irradiation amount becomes 40 kJ / cm 2. Went.
- the exposure transfer image was simulated when the exposure was transferred to the resist film on the semiconductor device with the exposure light having a wavelength of 193 nm using AIMS193 (manufactured by Carl Zeiss). went. When the exposure transfer image obtained by this simulation was verified, the design specifications were sufficiently satisfied.
- the phase shift mask 200 manufactured from the mask blank 100 of Example 3 is set in an exposure apparatus until exposure transfer with exposure light of an ArF excimer laser reaches an integrated dose of 40 kJ / cm 2. Even if it does, it can be said that exposure transfer can be performed with high precision to the resist film on the semiconductor device.
- phase shift pattern 2a was very small. From the above, even if the phase shift mask 200 manufactured from the mask blank 100 of Example 3 is irradiated with the ArF excimer laser exposure light on the phase shift pattern 2a on which the light shielding pattern 3b is laminated, It can be said that the phenomenon that the chromium in the light shielding pattern 3b moves into the phase shift pattern 2a (chrome migration) can be sufficiently suppressed.
- SIMS secondary ion mass spectrometry
- Example 4 Manufacture of mask blanks
- the mask blank 100 of Example 4 was manufactured in the same procedure as Example 2 except for the light shielding film 3.
- the light shielding film 3 of Example 4 was the same as the light shielding film 3 of Example 3.
- the phase shift film 2 composed of the lower layer 21 of MoSiN and the upper layer 22 of MoSiON, the light shielding film 3 composed of the lowermost layer of CrOCN and the upper layer of CrN, and the hard mask film 4 are laminated on the translucent substrate.
- a mask blank 100 of Example 4 having the above structure was manufactured.
- This mask blank 100 has a back surface reflectance (reflectance on the translucent substrate 1 side) of 34.9% with respect to light having a wavelength of 193 nm when the phase shift film 2 and the light shielding film 3 are laminated on the translucent substrate 1.
- a back surface reflectance reflectance on the translucent substrate 1 side
- the optical density (OD) of light having a wavelength of 193 nm in the laminated structure of the phase shift film 2 and the light shielding film 3 was measured and found to be 3.0 or more.
- Irradiation treatment in which ArF excimer laser light is intermittently irradiated to the region of the phase shift pattern 2a in which the light-shielding pattern 3b in the phase shift mask 200 of Example 4 thus fabricated is laminated so that the integrated dose is 40 kJ / cm 2. Went.
- the exposure transfer image was simulated when the exposure was transferred to the resist film on the semiconductor device with the exposure light having a wavelength of 193 nm using AIMS193 (manufactured by Carl Zeiss). went. When the exposure transfer image obtained by this simulation was verified, the design specifications were sufficiently satisfied.
- the phase shift mask 200 manufactured from the mask blank 100 of Example 4 is set in an exposure apparatus until exposure transfer with ArF excimer laser exposure light reaches an integrated dose of 40 kJ / cm 2. Even if it does, it can be said that exposure transfer can be performed with high precision to the resist film on the semiconductor device.
- phase shift pattern 2a was very small. From the above, even if the phase shift mask 200 manufactured from the mask blank 100 of Example 4 is irradiated with the ArF excimer laser exposure light on the phase shift pattern 2a on which the light shielding pattern 3b is laminated, It can be said that the phenomenon that the chromium in the light shielding pattern 3b moves into the phase shift pattern 2a (chrome migration) can be sufficiently suppressed.
- SIMS secondary ion mass spectrometry
- Example 5 Manufacture of mask blanks
- the mask blank 100 of Example 5 was manufactured in the same procedure as Example 1 except for the phase shift film 2.
- the material and film thickness for forming the lower layer 21 and the upper layer 22 are changed.
- the translucent substrate 1 is installed in a single-wafer RF sputtering apparatus, and a silicon (Si) target is used and RF sputtering using argon (Ar) gas as a sputtering gas is performed.
- a lower layer 21 (Si film) of the phase shift film 2 made of silicon in contact with the surface was formed to a thickness of 8 nm.
- a phase shift composed of silicon and nitrogen is formed on the lower layer 21 by reactive sputtering (RF sputtering) using a silicon (Si) target and a mixed gas of argon (Ar) and nitrogen (N 2 ) as a sputtering gas.
- the light-transmitting substrate 1 on which the phase shift film 2 was formed was subjected to a heat treatment for reducing the film stress of the phase shift film 2 and forming an oxide layer on the surface layer portion.
- a phase shift measuring device MPM193, manufactured by Lasertec Corporation
- the transmittance and phase difference of the phase shift film 2 with respect to light having a wavelength of 193 nm were measured.
- the transmittance was 6.1%
- the phase difference was 177.0. Degree.
- this phase shift film 2 was analyzed by STEM and EDX, it was confirmed that an oxide layer was formed in a surface layer portion having a thickness of about 2 nm from the surface of the upper layer 22.
- the mask blank 100 of Example 5 was manufactured.
- This mask blank 100 has a back surface reflectance (reflectance on the translucent substrate 1 side) of 42.7% with respect to light having a wavelength of 193 nm when the phase shift film 2 and the light shielding film 3 are laminated on the translucent substrate 1.
- the optical density (OD) of light having a wavelength of 193 nm in the laminated structure of the phase shift film 2 and the light shielding film 3 was measured and found to be 3.0 or more.
- phase shift film 2 was formed under the same film formation conditions.
- the lower layer 21 had a refractive index n of 1. 06
- the extinction coefficient k was 2.72
- the upper layer 22 had a refractive index n of 2.63 and an extinction coefficient k of 0.37.
- the phase shift mask 200 manufactured from the mask blank 100 of Example 5 is set in an exposure apparatus until exposure transfer with exposure light of an ArF excimer laser reaches an integrated dose of 40 kJ / cm 2. Even if it does, it can be said that exposure transfer can be performed with high precision to the resist film on the semiconductor device.
- phase shift mask 200 manufactured from the mask blank 100 of the fifth embodiment is irradiated with the ArF excimer laser exposure light on the phase shift pattern 2a in which the light shielding pattern 3b is laminated. It can be said that the phenomenon that the chromium in the light shielding pattern 3b moves into the phase shift pattern 2a (chrome migration) can be sufficiently suppressed.
- Comparative Example 1 Manufacture of mask blanks
- the mask blank of Comparative Example 1 was manufactured in the same procedure as in Example 1 except for the phase shift film 2.
- the phase shift film 2 made of molybdenum, silicon and nitrogen is formed to a thickness of 69 nm by reactive sputtering (DC sputtering) using a mixed gas of argon (Ar), nitrogen (N 2 ) and helium (He) as a sputtering gas. Formed.
- phase shift film was also subjected to heat treatment under the same processing conditions as in Example 1.
- a phase shift film of Comparative Example 1 was formed on the main surface of another translucent substrate 1 under the same conditions, and a heat treatment was prepared.
- a phase shift amount measuring device MPM193, manufactured by Lasertec Corporation
- the transmittance and phase difference of the phase shift film with respect to light having a wavelength of 193 nm were measured.
- the transmittance was 6.1% and the phase difference was 177.0 degrees. (Deg).
- the phase shift film was analyzed by STEM and EDX, it was confirmed that an oxide layer was formed with a thickness of about 2 nm from the surface of the phase shift film.
- the mask blank of Comparative Example 1 having a structure in which a phase shift film made of MoSiN, a light-shielding film made of a single layer structure of CrOCN, and a hard mask film was laminated on the translucent substrate 1 by the above procedure.
- This mask blank had a back surface reflectance (reflectance on the translucent substrate 1 side) of 11.0% with respect to light having a wavelength of 193 nm when the phase shift film and the light shielding film were laminated on the translucent substrate 1. .
- the optical density (OD) of light having a wavelength of 193 nm in the laminated structure of the phase shift film and the light shielding film was measured and found to be 3.0 or more.
- another light-transmitting substrate was prepared, and only the phase shift film was formed under the same film formation conditions, and each optical characteristic of the phase shift film was measured.
- the refractive index n was 2.39, and the extinction coefficient k was 0.57.
- Irradiation processing was performed in which the ArF excimer laser light was intermittently irradiated so that the integrated irradiation amount was 40 kJ / cm 2 on the phase shift pattern region in which the light shielding patterns in the phase shift mask of Comparative Example 1 were stacked.
- an exposure transfer image was simulated when the exposure was transferred to the resist film on the semiconductor device with exposure light having a wavelength of 193 nm using AIMS 193 (manufactured by Carl Zeiss). It was. When the exposure transfer image obtained by this simulation was verified, the design specifications could not be satisfied.
- the region of the phase shift pattern light shielding pattern in the phase shift mask of Comparative Example 1 is laminated to, integrated radiation, ArF excimer laser light was irradiated process of intermittently irradiated so as to 40 kJ / cm 2 .
- Secondary ion mass spectrometry (SIMS) was performed on the phase shift pattern of the irradiated region.
- SIMS Secondary ion mass spectrometry
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Drying Of Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
(構成1)
透光性基板上に、位相シフト膜および遮光膜がこの順に積層した構造を備えるマスクブランクであって、
前記位相シフト膜は、ArFエキシマレーザーの露光光を2%以上30%以下の透過率で透過させる機能と、前記位相シフト膜を透過した前記露光光に対して前記位相シフト膜の厚さと同じ距離だけ空気中を通過した前記露光光との間で150度以上200度以下の位相差を生じさせる機能とを有し、
前記位相シフト膜は、ケイ素を含有し、クロムを実質的に含有しない材料で形成され、前記透光性基板側から下層と上層が積層した構造を含み、
前記下層は、前記透光性基板よりも前記露光光の波長における屈折率nが小さく、
前記上層は、前記透光性基板よりも前記露光光の波長における屈折率nが大きく、
前記下層は、前記上層よりも前記露光光の波長における消衰係数kが大きく、
前記遮光膜は、前記位相シフト膜に接する層を含み、
前記位相シフト膜に接する層は、クロムを含有する材料からなり、前記上層よりも前記露光光の波長における屈折率nが小さく、かつ前記上層よりも前記露光光の波長における消衰係数kが大きい
ことを特徴とするマスクブランク。
前記上層は、前記下層よりも厚さが厚いことを特徴とする構成1記載のマスクブランク。
(構成3)
前記下層は、厚さが10nm未満であることを特徴とする構成1または2に記載のマスクブランク。
前記下層の屈折率nは、1.5以下であることを特徴とする構成1から3のいずれかに記載のマスクブランク。
(構成5)
前記上層の屈折率nは、2.0よりも大きいことを特徴とする構成1から4のいずれかに記載のマスクブランク。
前記位相シフト膜に接する層の屈折率nは、2.0以下であることを特徴とする構成1から5のいずれかに記載のマスクブランク。
(構成7)
前記下層の消衰係数kは、2.0以上であることを特徴とする構成1から6のいずれかに記載のマスクブランク。
前記上層の消衰係数kは、0.8以下であることを特徴とする構成1から7のいずれかに記載のマスクブランク。
(構成9)
前記位相シフト膜に接する層の消衰係数kは、1.0以上であることを特徴とする構成1から8のいずれかに記載のマスクブランク。
前記下層は、前記透光性基板の表面に接して形成されていることを特徴とする構成1から9のいずれかに記載のマスクブランク。
(構成11)
前記上層は、表層にその表層を除いた部分の上層よりも酸素含有量が多い層を有することを特徴とする構成1から10のいずれかに記載のマスクブランク。
前記透光性基板側から入射する前記露光光に対する裏面反射率が30%以上であることを特徴とする構成1から11のいずれかに記載のマスクブランク。
(構成13)
透光性基板上に、転写パターンが形成された位相シフト膜と、遮光パターンが形成された遮光膜がこの順に積層した構造を備える位相シフトマスクであって、
前記位相シフト膜は、ArFエキシマレーザーの露光光を2%以上30%以下の透過率で透過させる機能と、前記位相シフト膜を透過した前記露光光に対して前記位相シフト膜の厚さと同じ距離だけ空気中を通過した前記露光光との間で150度以上200度以下の位相差を生じさせる機能とを有し、
前記位相シフト膜は、ケイ素を含有し、クロムを実質的に含有しない材料で形成され、前記透光性基板側から下層と上層が積層した構造を含み、
前記下層は、前記透光性基板よりも前記露光光の波長における屈折率nが小さく、
前記上層は、前記透光性基板よりも前記露光光の波長における屈折率nが大きく、
前記下層は、前記上層よりも前記露光光の波長における消衰係数kが大きく、
前記遮光膜は、前記位相シフト膜に接する層を含み、
前記位相シフト膜に接する層は、クロムを含有する材料からなり、前記上層よりも前記露光光の波長における屈折率nが小さく、かつ前記上層よりも前記露光光の波長における消衰係数kが大きい
ことを特徴とする位相シフトマスク。
前記上層は、前記下層よりも厚さが厚いことを特徴とする構成13記載の位相シフトマスク。
(構成15)
前記下層は、厚さが10nm未満であることを特徴とする構成13または14に記載の位相シフトマスク。
前記下層の屈折率nは、1.5以下であることを特徴とする構成13から15のいずれかに記載の位相シフトマスク。
(構成17)
前記上層の屈折率nは、2.0よりも大きいことを特徴とする構成13から16のいずれかに記載の位相シフトマスク。
前記位相シフト膜に接する層の屈折率nは、2.0以下であることを特徴とする構成13から17のいずれかに記載の位相シフトマスク。
(構成19)
前記下層の消衰係数kは、2.0以上であることを特徴とする構成13から18のいずれかに記載の位相シフトマスク。
前記上層の消衰係数kは、0.8以下であることを特徴とする構成13から19のいずれかに記載の位相シフトマスク。
(構成21)
前記位相シフト膜に接する層の消衰係数kは、1.0以上であることを特徴とする構成13から20のいずれかに記載の位相シフトマスク。
前記下層は、前記透光性基板の表面に接して形成されていることを特徴とする構成13から21のいずれかに記載の位相シフトマスク。
(構成23)
前記上層は、表層にその表層を除いた部分の上層よりも酸素含有量が多い層を有することを特徴とする構成13から22のいずれかに記載の位相シフトマスク。
前記透光性基板側から入射する前記露光光に対する裏面反射率が30%以上であることを特徴とする構成13から23のいずれかに記載の位相シフトマスク。
(構成25)
構成13から24のいずれかに記載の位相シフトマスクを用い、半導体基板上のレジスト膜に転写パターンを露光転写する工程を備えることを特徴とする半導体デバイスの製造方法。
(実施例1)
[マスクブランクの製造]
主表面の寸法が約152mm×約152mmで、厚さが約6.35mmの合成石英ガラスからなる透光性基板1を準備した。この透光性基板1は、端面及び主表面を所定の表面粗さに研磨され、その後、所定の洗浄処理および乾燥処理を施されたものである。この透光性基板1の光学特性を測定したところ、屈折率nが1.56、消衰係数kが0.00であった。
次に、この実施例1のマスクブランク100を用い、以下の手順で実施例1の位相シフトマスク200を作製した。最初に、ハードマスク膜4の表面にHMDS処理を施した。続いて、スピン塗布法によって、ハードマスク膜4の表面に接して、電子線描画用化学増幅型レジストからなるレジスト膜を膜厚80nmで形成した。次に、このレジスト膜に対して、位相シフト膜2に形成すべき位相シフトパターンである第1のパターンを電子線描画し、所定の現像処理および洗浄処理を行い、第1のパターンを有する第1のレジストパターン5aを形成した(図2(a)参照)。
[マスクブランクの製造]
実施例2のマスクブランク100は、位相シフト膜2以外については、実施例1と同様の手順で製造した。この実施例2の位相シフト膜2は、下層21と上層22を形成する材料と膜厚をそれぞれ変更している。具体的には、枚葉式DCスパッタ装置内に透光性基板1を設置し、モリブデン(Mo)とケイ素(Si)との混合ターゲット(Mo:Si=11原子%:89原子%)を用い、アルゴン(Ar)、窒素(N2)およびヘリウム(He)の混合ガスをスパッタリングガスとする反応性スパッタリング(DCスパッタリング)により、透光性基板1上に、モリブデン、ケイ素および窒素からなる位相シフト膜2の下層21(MoSiN膜)を7nmの厚さで形成した。
次に、この実施例2のマスクブランク100を用い、実施例1と同様の手順で、実施例2の位相シフトマスク200を作製した。
[マスクブランクの製造]
実施例3のマスクブランク100は、遮光膜3以外については、実施例1と同様の手順で製造した。この実施例3の遮光膜3は、位相シフト膜2側から最下層(位相シフト膜2に接する層)と上層が積層した構造からなる。具体的には、枚葉式DCスパッタ装置内に位相シフト膜2が形成された透光性基板1を設置し、クロム(Cr)ターゲットを用い、アルゴン(Ar)、窒素(N2)、二酸化炭素(CO2)およびヘリウム(He)の混合ガスをスパッタリングガスとする反応性スパッタリング(DCスパッタリング)により、位相シフト膜2上に、クロム、酸素、窒素および炭素からなる遮光膜3の最下層(CrOCN膜 Cr:O:C:N=49原子%:24原子%:13原子%:14原子%)を47nmの厚さで形成した。続いて、同じくクロム(Cr)ターゲットを用い、アルゴン(Ar)と窒素(N2)の混合ガスをスパッタリングガスとする反応性スパッタリング(DCスパッタリング)により、最下層の上に、クロムおよび窒素からなる遮光膜3の上層(CrN膜 Cr:N=76原子%:24原子%)を5nmの厚さで形成した。
次に、この実施例3のマスクブランク100を用い、実施例1と同様の手順で、実施例3の位相シフトマスク200を作製した。
[マスクブランクの製造]
実施例4のマスクブランク100は、遮光膜3以外については、実施例2と同様の手順で製造した。この実施例4の遮光膜3は、実施例3の遮光膜3と同じものを用いた。以上の手順により、透光性基板上に、MoSiNの下層21とMoSiONの上層22とからなる位相シフト膜2、CrOCNの最下層とCrNの上層とからなる遮光膜3およびハードマスク膜4が積層した構造を備える実施例4のマスクブランク100を製造した。このマスクブランク100は、透光性基板1上に位相シフト膜2と遮光膜3が積層した状態における波長193nmの光に対する裏面反射率(透光性基板1側の反射率)は34.9%であった。この位相シフト膜2と遮光膜3の積層構造における波長193nmの光に対する光学濃度(OD)を測定したところ、3.0以上であった。
次に、この実施例4のマスクブランク100を用い、実施例1と同様の手順で、実施例4の位相シフトマスク200を作製した。
[マスクブランクの製造]
実施例5のマスクブランク100は、位相シフト膜2以外については、実施例1と同様の手順で製造した。この実施例5の位相シフト膜2は、下層21と上層22を形成する材料と膜厚をそれぞれ変更している。具体的には、枚葉式RFスパッタ装置内に透光性基板1を設置し、ケイ素(Si)ターゲットを用い、アルゴン(Ar)ガスをスパッタリングガスとするRFスパッタリングにより、透光性基板1の表面に接してケイ素からなる位相シフト膜2の下層21(Si膜)を8nmの厚さで形成した。続いて、ケイ素(Si)ターゲットを用い、アルゴン(Ar)および窒素(N2)の混合ガスをスパッタリングガスとする反応性スパッタリング(RFスパッタリング)により、下層21上に、ケイ素および窒素からなる位相シフト膜2の上層22(SiN膜 Si:N=43原子%:57原子%)を63nmの厚さで形成した。以上の手順により、透光性基板1の表面に接して下層21と上層22が積層した位相シフト膜2を71nmの厚さで形成した。
[位相シフトマスクの製造]
次に、この実施例5のマスクブランク100を用い、実施例1と同様の手順で、実施例5の位相シフトマスク200を作製した。
[マスクブランクの製造]
この比較例1のマスクブランクは、位相シフト膜2以外については、実施例1と同様の手順で製造した。この比較例1の位相シフト膜は、モリブデン、ケイ素および窒素からなる単層構造の膜を適用した。具体的には、枚葉式DCスパッタ装置内に透光性基板1を設置し、モリブデン(Mo)とケイ素(Si)との混合焼結ターゲット(Mo:Si=11原子%:89原子%)を用い、アルゴン(Ar)、窒素(N2)およびヘリウム(He)の混合ガスをスパッタリングガスとする反応性スパッタリング(DCスパッタリング)により、モリブデン、ケイ素および窒素からなる位相シフト膜2を69nmの厚さで形成した。
次に、この比較例1のマスクブランクを用い、実施例1と同様の手順で、比較例1の位相シフトマスクを作製した。
2 位相シフト膜
21 下層
22 上層
2a 位相シフトパターン
3 遮光膜
3a,3b 遮光パターン
4 ハードマスク膜
4a ハードマスクパターン
5a 第1のレジストパターン
6b 第2のレジストパターン
100 マスクブランク
200 位相シフトマスク
Claims (25)
- 透光性基板上に、位相シフト膜および遮光膜がこの順に積層した構造を備えるマスクブランクであって、
前記位相シフト膜は、ArFエキシマレーザーの露光光を2%以上30%以下の透過率で透過させる機能と、前記位相シフト膜を透過した前記露光光に対して前記位相シフト膜の厚さと同じ距離だけ空気中を通過した前記露光光との間で150度以上200度以下の位相差を生じさせる機能とを有し、
前記位相シフト膜は、ケイ素を含有し、クロムを実質的に含有しない材料で形成され、前記透光性基板側から下層と上層が積層した構造を含み、
前記下層は、前記透光性基板よりも前記露光光の波長における屈折率nが小さく、
前記上層は、前記透光性基板よりも前記露光光の波長における屈折率nが大きく、
前記下層は、前記上層よりも前記露光光の波長における消衰係数kが大きく、
前記遮光膜は、前記位相シフト膜に接する層を含み、
前記位相シフト膜に接する層は、クロムを含有する材料からなり、前記上層よりも前記露光光の波長における屈折率nが小さく、かつ前記上層よりも前記露光光の波長における消衰係数kが大きい
ことを特徴とするマスクブランク。 - 前記上層は、前記下層よりも厚さが厚いことを特徴とする請求項1記載のマスクブランク。
- 前記下層は、厚さが10nm未満であることを特徴とする請求項1または2に記載のマスクブランク。
- 前記下層の屈折率nは、1.5以下であることを特徴とする請求項1から3のいずれかに記載のマスクブランク。
- 前記上層の屈折率nは、2.0よりも大きいことを特徴とする請求項1から4のいずれかに記載のマスクブランク。
- 前記位相シフト膜に接する層の屈折率nは、2.0以下であることを特徴とする請求項1から5のいずれかに記載のマスクブランク。
- 前記下層の消衰係数kは、2.0以上であることを特徴とする請求項1から6のいずれかに記載のマスクブランク。
- 前記上層の消衰係数kは、0.8以下であることを特徴とする請求項1から7のいずれかに記載のマスクブランク。
- 前記位相シフト膜に接する層の消衰係数kは、1.0以上であることを特徴とする請求項1から8のいずれかに記載のマスクブランク。
- 前記下層は、前記透光性基板の表面に接して形成されていることを特徴とする請求項1から9のいずれかに記載のマスクブランク。
- 前記上層は、表層にその表層を除いた部分の上層よりも酸素含有量が多い層を有することを特徴とする請求項1から10のいずれかに記載のマスクブランク。
- 前記透光性基板側から入射する前記露光光に対する裏面反射率が30%以上であることを特徴とする請求項1から11のいずれかに記載のマスクブランク。
- 透光性基板上に、転写パターンが形成された位相シフト膜と、遮光パターンが形成された遮光膜がこの順に積層した構造を備える位相シフトマスクであって、
前記位相シフト膜は、ArFエキシマレーザーの露光光を2%以上30%以下の透過率で透過させる機能と、前記位相シフト膜を透過した前記露光光に対して前記位相シフト膜の厚さと同じ距離だけ空気中を通過した前記露光光との間で150度以上200度以下の位相差を生じさせる機能とを有し、
前記位相シフト膜は、ケイ素を含有し、クロムを実質的に含有しない材料で形成され、前記透光性基板側から下層と上層が積層した構造を含み、
前記下層は、前記透光性基板よりも前記露光光の波長における屈折率nが小さく、
前記上層は、前記透光性基板よりも前記露光光の波長における屈折率nが大きく、
前記下層は、前記上層よりも前記露光光の波長における消衰係数kが大きく、
前記遮光膜は、前記位相シフト膜に接する層を含み、
前記位相シフト膜に接する層は、クロムを含有する材料からなり、前記上層よりも前記露光光の波長における屈折率nが小さく、かつ前記上層よりも前記露光光の波長における消衰係数kが大きい
ことを特徴とする位相シフトマスク。 - 前記上層は、前記下層よりも厚さが厚いことを特徴とする請求項13記載の位相シフトマスク。
- 前記下層は、厚さが10nm未満であることを特徴とする請求項13または14に記載の位相シフトマスク。
- 前記下層の屈折率nは、1.5以下であることを特徴とする請求項13から15のいずれかに記載の位相シフトマスク。
- 前記上層の屈折率nは、2.0よりも大きいことを特徴とする請求項13から16のいずれかに記載の位相シフトマスク。
- 前記位相シフト膜に接する層の屈折率nは、2.0以下であることを特徴とする請求項13から17のいずれかに記載の位相シフトマスク。
- 前記下層の消衰係数kは、2.0以上であることを特徴とする請求項13から18のいずれかに記載の位相シフトマスク。
- 前記上層の消衰係数kは、0.8以下であることを特徴とする請求項13から19のいずれかに記載の位相シフトマスク。
- 前記位相シフト膜に接する層の消衰係数kは、1.0以上であることを特徴とする請求項13から20のいずれかに記載の位相シフトマスク。
- 前記下層は、前記透光性基板の表面に接して形成されていることを特徴とする請求項13から21のいずれかに記載の位相シフトマスク。
- 前記上層は、表層にその表層を除いた部分の上層よりも酸素含有量が多い層を有することを特徴とする請求項13から22のいずれかに記載の位相シフトマスク。
- 前記透光性基板側から入射する前記露光光に対する裏面反射率が30%以上であることを特徴とする請求項13から23のいずれかに記載の位相シフトマスク。
- 請求項13から24のいずれかに記載の位相シフトマスクを用い、半導体基板上のレジスト膜に転写パターンを露光転写する工程を備えることを特徴とする半導体デバイスの製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020237040997A KR20230167149A (ko) | 2015-09-30 | 2016-09-27 | 마스크 블랭크, 위상 시프트 마스크 및 반도체 디바이스의 제조 방법 |
US15/576,937 US10481486B2 (en) | 2015-09-30 | 2016-09-27 | Mask blank, phase shift mask, and method for manufacturing semiconductor device |
JP2017505664A JP6133530B1 (ja) | 2015-09-30 | 2016-09-27 | マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法 |
KR1020177032663A KR102608711B1 (ko) | 2015-09-30 | 2016-09-27 | 마스크 블랭크, 위상 시프트 마스크 및 반도체 디바이스의 제조 방법 |
US16/596,008 US10942441B2 (en) | 2015-09-30 | 2019-10-08 | Mask blank, phase shift mask, and method for manufacturing semiconductor device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015-193314 | 2015-09-30 | ||
JP2015193314 | 2015-09-30 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/576,937 A-371-Of-International US10481486B2 (en) | 2015-09-30 | 2016-09-27 | Mask blank, phase shift mask, and method for manufacturing semiconductor device |
US16/596,008 Continuation US10942441B2 (en) | 2015-09-30 | 2019-10-08 | Mask blank, phase shift mask, and method for manufacturing semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2017057376A1 true WO2017057376A1 (ja) | 2017-04-06 |
Family
ID=58427511
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2016/078483 WO2017057376A1 (ja) | 2015-09-30 | 2016-09-27 | マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US10481486B2 (ja) |
JP (2) | JP6133530B1 (ja) |
KR (2) | KR102608711B1 (ja) |
TW (2) | TWI684822B (ja) |
WO (1) | WO2017057376A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019056910A (ja) * | 2017-09-21 | 2019-04-11 | Hoya株式会社 | マスクブランク、転写用マスク、及び半導体デバイスの製造方法 |
JP2019133178A (ja) * | 2017-06-14 | 2019-08-08 | Hoya株式会社 | マスクブランク、転写用マスクおよび半導体デバイスの製造方法 |
US20210132488A1 (en) * | 2018-05-30 | 2021-05-06 | Hoya Corporation | Mask blank, phase-shift mask, and semiconductor device manufacturing method |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6058757B1 (ja) * | 2015-07-15 | 2017-01-11 | Hoya株式会社 | マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法 |
JP6400763B2 (ja) | 2017-03-16 | 2018-10-03 | Hoya株式会社 | マスクブランク、転写用マスクおよび半導体デバイスの製造方法 |
US11022875B2 (en) | 2018-02-27 | 2021-06-01 | Hoya Corporation | Mask blank, phase shift mask, and method of manufacturing semiconductor device |
US11314161B2 (en) | 2018-03-14 | 2022-04-26 | Hoya Corporation | Mask blank, phase shift mask, and method of manufacturing semiconductor device |
JP6557381B1 (ja) * | 2018-05-08 | 2019-08-07 | エスアンドエス テック カンパニー リミテッド | 位相反転ブランクマスク及びフォトマスク |
JP7109996B2 (ja) | 2018-05-30 | 2022-08-01 | Hoya株式会社 | マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法 |
US11131018B2 (en) * | 2018-08-14 | 2021-09-28 | Viavi Solutions Inc. | Coating material sputtered in presence of argon-helium based coating |
KR20210121067A (ko) * | 2019-02-13 | 2021-10-07 | 호야 가부시키가이샤 | 마스크 블랭크, 위상 시프트 마스크, 위상 시프트 마스크의 제조 방법 및 반도체 디바이스의 제조 방법 |
JP7313166B2 (ja) * | 2019-03-18 | 2023-07-24 | Hoya株式会社 | マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法 |
TWI743766B (zh) * | 2019-05-31 | 2021-10-21 | 南韓商S&S技術股份有限公司 | 空白罩幕和光罩 |
JP2023515509A (ja) | 2020-02-19 | 2023-04-13 | サーモ エレクトロン サイエンティフィック インスツルメンツ エルエルシー | 構造化照明のための位相マスク |
CN113363217B (zh) * | 2020-03-04 | 2024-02-06 | 华邦电子股份有限公司 | 半导体存储器结构及其形成方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001201842A (ja) * | 1999-11-09 | 2001-07-27 | Ulvac Seimaku Kk | 位相シフトフォトマスクブランクス及び位相シフトフォトマスク並びに半導体装置の製造方法 |
JP2014145920A (ja) * | 2013-01-29 | 2014-08-14 | Hoya Corp | マスクブランク、転写用マスク、マスクブランクの製造方法、転写用マスクの製造方法、および半導体デバイスの製造方法 |
WO2016103843A1 (ja) * | 2014-12-26 | 2016-06-30 | Hoya株式会社 | マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4686006B2 (ja) * | 2000-04-27 | 2011-05-18 | 大日本印刷株式会社 | ハーフトーン位相シフトフォトマスクとハーフトーン位相シフトフォトマスク用ブランクス、及びハーフトーン位相シフトフォトマスクの製造方法 |
JP4737483B2 (ja) * | 2001-03-30 | 2011-08-03 | Hoya株式会社 | ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク |
US7314690B2 (en) | 2003-04-09 | 2008-01-01 | Hoya Corporation | Photomask producing method and photomask blank |
JP4535241B2 (ja) * | 2004-03-31 | 2010-09-01 | 凸版印刷株式会社 | ハーフトーン型位相シフトマスク用ブランク、ハーフトーン型位相シフトマスク及びパターン転写方法 |
KR20110036054A (ko) * | 2008-06-25 | 2011-04-06 | 호야 가부시키가이샤 | 위상 시프트 마스크 블랭크 및 위상 시프트 마스크 |
JP2010217514A (ja) | 2009-03-17 | 2010-09-30 | Toppan Printing Co Ltd | フォトマスクの製造方法 |
JP5317310B2 (ja) * | 2009-03-31 | 2013-10-16 | Hoya株式会社 | マスクブランク及び転写用マスクの製造方法 |
US9017902B2 (en) * | 2009-06-18 | 2015-04-28 | Hoya Corporation | Mask blank, transfer mask, and method of manufacturing a transfer mask |
KR101921759B1 (ko) * | 2011-09-21 | 2018-11-23 | 호야 가부시키가이샤 | 전사용 마스크의 제조 방법 |
JP5474129B2 (ja) * | 2012-05-24 | 2014-04-16 | 信越化学工業株式会社 | 半透明積層膜の設計方法およびフォトマスクブランクの製造方法 |
JP5906143B2 (ja) * | 2012-06-27 | 2016-04-20 | Hoya株式会社 | マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法 |
JP5690023B2 (ja) * | 2012-07-13 | 2015-03-25 | Hoya株式会社 | マスクブランク及び位相シフトマスクの製造方法 |
JP5596111B2 (ja) * | 2012-12-05 | 2014-09-24 | Hoya株式会社 | 半導体デバイスの製造方法 |
JP6005530B2 (ja) * | 2013-01-15 | 2016-10-12 | Hoya株式会社 | マスクブランク、位相シフトマスクおよびこれらの製造方法 |
JP6389375B2 (ja) * | 2013-05-23 | 2018-09-12 | Hoya株式会社 | マスクブランクおよび転写用マスク並びにそれらの製造方法 |
JP6264238B2 (ja) * | 2013-11-06 | 2018-01-24 | 信越化学工業株式会社 | ハーフトーン位相シフト型フォトマスクブランク、ハーフトーン位相シフト型フォトマスク及びパターン露光方法 |
JP6544943B2 (ja) * | 2014-03-28 | 2019-07-17 | Hoya株式会社 | マスクブランク、位相シフトマスクの製造方法、位相シフトマスク、および半導体デバイスの製造方法 |
JP5779290B1 (ja) * | 2014-03-28 | 2015-09-16 | Hoya株式会社 | マスクブランク、位相シフトマスクの製造方法、位相シフトマスク、および半導体デバイスの製造方法 |
-
2016
- 2016-09-26 TW TW105131102A patent/TWI684822B/zh active
- 2016-09-26 TW TW108146856A patent/TWI720752B/zh active
- 2016-09-27 KR KR1020177032663A patent/KR102608711B1/ko active IP Right Grant
- 2016-09-27 JP JP2017505664A patent/JP6133530B1/ja active Active
- 2016-09-27 KR KR1020237040997A patent/KR20230167149A/ko not_active Application Discontinuation
- 2016-09-27 US US15/576,937 patent/US10481486B2/en active Active
- 2016-09-27 WO PCT/JP2016/078483 patent/WO2017057376A1/ja active Application Filing
-
2017
- 2017-04-19 JP JP2017082821A patent/JP6297734B2/ja active Active
-
2019
- 2019-10-08 US US16/596,008 patent/US10942441B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001201842A (ja) * | 1999-11-09 | 2001-07-27 | Ulvac Seimaku Kk | 位相シフトフォトマスクブランクス及び位相シフトフォトマスク並びに半導体装置の製造方法 |
JP2014145920A (ja) * | 2013-01-29 | 2014-08-14 | Hoya Corp | マスクブランク、転写用マスク、マスクブランクの製造方法、転写用マスクの製造方法、および半導体デバイスの製造方法 |
WO2016103843A1 (ja) * | 2014-12-26 | 2016-06-30 | Hoya株式会社 | マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019133178A (ja) * | 2017-06-14 | 2019-08-08 | Hoya株式会社 | マスクブランク、転写用マスクおよび半導体デバイスの製造方法 |
JP7029423B2 (ja) | 2017-06-14 | 2022-03-03 | Hoya株式会社 | マスクブランク、転写用マスクおよび半導体デバイスの製造方法 |
JP2019056910A (ja) * | 2017-09-21 | 2019-04-11 | Hoya株式会社 | マスクブランク、転写用マスク、及び半導体デバイスの製造方法 |
CN111133379A (zh) * | 2017-09-21 | 2020-05-08 | Hoya株式会社 | 掩模坯料、转印用掩模以及半导体器件的制造方法 |
CN111133379B (zh) * | 2017-09-21 | 2024-03-22 | Hoya株式会社 | 掩模坯料、转印用掩模以及半导体器件的制造方法 |
US20210132488A1 (en) * | 2018-05-30 | 2021-05-06 | Hoya Corporation | Mask blank, phase-shift mask, and semiconductor device manufacturing method |
Also Published As
Publication number | Publication date |
---|---|
KR20180059393A (ko) | 2018-06-04 |
US20180149961A1 (en) | 2018-05-31 |
JP6297734B2 (ja) | 2018-03-20 |
KR20230167149A (ko) | 2023-12-07 |
US10481486B2 (en) | 2019-11-19 |
TW202018407A (zh) | 2020-05-16 |
TWI684822B (zh) | 2020-02-11 |
US10942441B2 (en) | 2021-03-09 |
JP6133530B1 (ja) | 2017-05-24 |
TWI720752B (zh) | 2021-03-01 |
US20200033718A1 (en) | 2020-01-30 |
JPWO2017057376A1 (ja) | 2017-10-05 |
JP2017134424A (ja) | 2017-08-03 |
TW201721279A (zh) | 2017-06-16 |
KR102608711B1 (ko) | 2023-12-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6297734B2 (ja) | マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法 | |
JP6599281B2 (ja) | マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法 | |
JP6087401B2 (ja) | マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法 | |
TWI683174B (zh) | 遮罩基底、相位轉移遮罩、相位轉移遮罩之製造方法及半導體元件之製造方法 | |
JP6271780B2 (ja) | マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法 | |
JP6104852B2 (ja) | マスクブランクの製造方法、位相シフトマスクの製造方法および半導体デバイスの製造方法 | |
JP7106492B2 (ja) | マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法 | |
JP6321265B2 (ja) | マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法 | |
JP6490786B2 (ja) | マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法 | |
WO2019188397A1 (ja) | マスクブランク、位相シフトマスク及び半導体デバイスの製造方法 | |
WO2019230312A1 (ja) | マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法 | |
JP6295352B2 (ja) | マスクブランクの製造方法、位相シフトマスクの製造方法および半導体デバイスの製造方法 | |
JP6896694B2 (ja) | マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法 | |
JP2018132686A (ja) | マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ENP | Entry into the national phase |
Ref document number: 2017505664 Country of ref document: JP Kind code of ref document: A |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 16851547 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 20177032663 Country of ref document: KR Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 15576937 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 16851547 Country of ref document: EP Kind code of ref document: A1 |