WO2017051599A1 - データ補正装置、描画装置、配線パターン形成システム、検査装置、データ補正方法および配線基板の製造方法 - Google Patents

データ補正装置、描画装置、配線パターン形成システム、検査装置、データ補正方法および配線基板の製造方法 Download PDF

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Publication number
WO2017051599A1
WO2017051599A1 PCT/JP2016/071306 JP2016071306W WO2017051599A1 WO 2017051599 A1 WO2017051599 A1 WO 2017051599A1 JP 2016071306 W JP2016071306 W JP 2016071306W WO 2017051599 A1 WO2017051599 A1 WO 2017051599A1
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WIPO (PCT)
Prior art keywords
pattern
mask
substrate
gap width
etching
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PCT/JP2016/071306
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English (en)
French (fr)
Japanese (ja)
Inventor
孝雄 小松崎
哲平 山本
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
日立化成株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 株式会社Ｓｃｒｅｅｎホールディングス, 日立化成株式会社 filed Critical 株式会社Ｓｃｒｅｅｎホールディングス
Priority to CN201680055055.XA priority Critical patent/CN108029196B/zh
Priority to KR1020187006007A priority patent/KR102082583B1/ko
Publication of WO2017051599A1 publication Critical patent/WO2017051599A1/ja

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process

Definitions

  • the present invention relates to a data correction apparatus, a drawing apparatus, a wiring pattern forming system, an inspection apparatus, a data correction method, and a wiring board manufacturing method.
  • a resist pattern is formed on the surface of a substrate on which a conductor film such as copper is formed, and etching is performed, whereby the pattern (wiring pattern) of the conductor film is formed on the substrate.
  • the shape of the pattern formed on the substrate may differ from the design data due to the density of the arrangement of pattern elements.
  • Japanese Patent Application Laid-Open Nos. 2001-230323 and 2005-202949 disclose methods for calculating the finished width of wiring by numerical simulation and correcting design data.
  • the cross-sectional shape of the pattern element of the conductor film formed on the substrate is a trapezoid. Since the image of the upper surface of the pattern element can be easily obtained, the shape of the upper surface can also be easily measured using the image. On the other hand, since the amount of light (reflected light of illumination light) obtained from the skirt of the pattern element is not sufficient, measurement of the shape of the lower surface of the pattern element is not easy. Therefore, it is difficult to correct the design data based on the lower surface of the conductive film pattern and to perform inspection based on the lower surface of the conductive film pattern.
  • the present invention is directed to a data correction apparatus that corrects design data of a pattern formed by etching a conductive film formed on the surface of a substrate with an etching solution.
  • a data correction apparatus includes a design data storage unit that stores design data of a pattern of the conductor film formed by etching under a predetermined condition on a substrate on which a conductor film is formed, and a conductor data on the substrate.
  • the upper surface which is the width of the gap between the upper surfaces of the pattern element pairs formed on the conductor film by etching using the mask element pair, with the width of the gap between adjacent mask element pairs as the mask gap width
  • Reference information storage unit that stores the reference information indicating the relationship between the gap width and the lower surface gap width, which is the width of the gap between the lower surfaces of the pattern element pair, for each of the plurality of mask gap widths;
  • the plurality of masks A measured value of the upper surface gap width of each of the plurality of pattern element pairs corresponding to the element pair is obtained, and the plurality of the plurality of pattern element pairs are referred to the reference information using the measured values, and
  • a lower surface gap width acquisition unit that acquires a plurality of lower surface gap width values in the mask gap width, and a data correction unit that corrects the design data based on the plurality of lower surface gap width values in the plurality of mask gap widths
  • the above data correction apparatus can easily correct design data based on the lower surface of the conductor film pattern.
  • a plurality of pattern element pairs corresponding to the plurality of mask gap widths are formed at each of a plurality of target positions on the processed substrate, and the lower surface gap width acquisition unit is For each mask gap width, by referring to the same reference information, a plurality of lower surface gap width values at the plurality of target positions are obtained, and the data correction unit is configured to obtain the plurality of lower surface positions at the plurality of target positions. The design data is corrected based on the gap width value.
  • the present invention is also directed to a drawing apparatus for drawing a pattern on a substrate.
  • a drawing apparatus according to the present invention includes the above data correction device, a light source, a light modulation unit that modulates light from the light source based on design data corrected by the data correction device, and a modulation by the light modulation unit.
  • a wiring pattern forming system includes the above-described data correction device and wiring pattern forming means for forming a wiring pattern on a substrate based on design data corrected by the data correction device.
  • the present invention is also directed to an inspection apparatus for inspecting a pattern formed by etching a conductive film formed on the surface of a substrate with an etching solution.
  • the inspection apparatus according to the present invention is formed adjacent to each other on the conductor film of the substrate, and a design data storage unit for storing design data of the pattern of the conductor film formed by etching on the substrate on which the conductor film is formed.
  • a reference information storage unit that stores a reference information indicating a relationship with a lower surface gap width that is a width of a gap between the lower surfaces of the pattern element pair, and a plurality of mask gap widths.
  • Real image storage that stores inspection image data that is image data of the upper surface of the pattern formed on the target substrate by etching using the mask pattern In the target substrate, a plurality of pattern element pairs are formed using a plurality of mask element pairs in which the plurality of mask gap widths are respectively set.
  • the plurality of pattern elements Based on the inspection image data, the plurality of pattern elements An upper surface gap width acquisition unit that acquires a measurement value of each upper surface gap width of the pair, and the reference information of the mask gap width specified from the design data for each pattern element of the pattern on the target substrate, The data correction unit that acquires the shape of the lower surface of the pattern on the target substrate from the pattern indicated by the inspection image data by referring to the measurement value with respect to the mask gap width, and the data correction unit.
  • Defect detection for detecting defects in the pattern on the target substrate based on the shape of the lower surface of the pattern For each of the plurality of mask gap widths, a change in shape of a pattern element pair when the conductor film is etched along the surface from a state where the conductor film is etched to the surface of the substrate
  • the reference information is obtained by determining the coefficient of the polynomial by fitting using a measurement value of the shape of the pattern element pair on the test substrate etched for a predetermined time.
  • the above inspection apparatus can easily perform inspection based on the lower surface of the conductor film pattern.
  • the present invention is also directed to a data correction method for correcting pattern design data formed by etching a conductive film formed on the surface of a substrate with an etching solution, and a method for manufacturing a wiring board.
  • FIG. 1 is a block diagram showing a configuration of a wiring pattern forming system 10 according to a first embodiment of the present invention.
  • the wiring pattern forming system 10 manufactures a wiring board by forming a wiring pattern on the board.
  • the wiring pattern forming system 10 includes drawing data creation means 11, drawing means 12, developing means 13, wiring pattern forming means 14, inspection means 15, and correction means 16.
  • design data creating means 19 provided outside the wiring pattern forming system 10 is also illustrated.
  • FIG. 2 is a diagram showing a process flow in which the wiring pattern forming system 10 manufactures a wiring board.
  • design data CAD data
  • step S1 design data indicating a desired wiring pattern
  • step S1 design data indicating a desired wiring pattern
  • step S1 design data indicating a desired wiring pattern
  • step S2 design data indicating a desired wiring pattern
  • step S2 design data indicating a desired wiring pattern
  • step S2 design data indicating a desired wiring pattern
  • the drawing data creation means 11 is realized by, for example, a computer, and the design data that is vector data is converted into drawing data that is raster data. That is, drawing data is created (step S2).
  • the drawing means 12 is a direct exposure apparatus (drawing apparatus) that directly forms an exposure pattern without using a mask, and holds a substrate that is to be a wiring board. A conductor film for wiring formation is formed on the surface of the insulating layer of the substrate, and a resist film is formed on the conductor film.
  • the drawing means 12 draws (exposes) a pattern on the resist film by irradiating the photosensitive resist film with ultraviolet rays or the like based on the drawing data (step S3).
  • the substrate is transported to the developing means 13 which is a developing device.
  • a developing process is performed in which a developer is sprayed onto the resist film after exposure (step S4).
  • the development process unnecessary regions of the resist film are removed, and a resist pattern (development pattern) is formed.
  • the wiring pattern forming means 14 which is an etching apparatus, the substrate after the development process is etched. As a result, the portion of the conductor film that is not covered with the resist pattern, that is, exposed from the resist pattern, is removed (shaved). Thereafter, the resist pattern is removed by removing the resist. In this way, a wiring pattern that is a pattern of the conductor film is formed on the substrate (step S5).
  • the substrate on which the wiring pattern is formed that is, the wiring substrate is transported to the inspection means 15 which is an inspection device, and the wiring pattern is inspected (step S6).
  • the pattern indicated by the design data includes a predetermined test pattern in addition to the wiring pattern, and the inspection result of the test pattern formed on the substrate is output to the correction unit 16.
  • the correcting means 16 is realized by, for example, a computer, and the design data is corrected based on the difference between the test pattern inspection result on the substrate and the test pattern indicated by the design data (step S7). At this time, the shape of the wiring pattern is corrected in the design data, and the shape of the test pattern is not corrected.
  • the corrected design data is output to the drawing data creating means 11 as indicating the pattern to be drawn on the next substrate.
  • the drawing data creating means 11 creates drawing data from the corrected design data (step S2), and the drawing process, the developing process, and the wiring pattern forming process are performed under the same conditions as described above (steps S3 to S5). . That is, a wiring pattern is formed on the substrate based on the corrected design data. As a result, a wiring board having a wiring pattern approximate to the wiring pattern indicated by the design data created by the design data creating means 19, that is, the original design data (uncorrected design data) is manufactured. In the wiring pattern forming system 10, every time a wiring board is manufactured, the design data is corrected (corrected with respect to the original design data) based on the inspection process and the inspection result (steps S6 and S7), and the corrected design data is corrected. Is used to form a wiring pattern for the next substrate (steps S2 to S5).
  • the design data may be corrected at an arbitrarily determined interval, such as every time a predetermined number of wiring boards are manufactured or every predetermined period.
  • FIG. 3 is a diagram showing a configuration of the drawing apparatus 1 including an example of the drawing data creation unit 11, the drawing unit 12, and the correction unit 16.
  • the drawing apparatus 1 is a direct drawing apparatus that directly draws an image of a pattern on a resist film by irradiating light onto a resist film that is a photosensitive material provided on the surface of the substrate 9.
  • the substrate 9 on which the pattern is drawn by the drawing apparatus 1 is developed and etched in various apparatuses (see FIG. 1). As a result, a pattern is formed on the substrate 9.
  • Etching for the substrate 9 is, for example, wet etching performed by applying an etchant to the substrate 9.
  • the drawing apparatus 1 includes a data processing device 2 and an exposure device 3.
  • the data processing device 2 corrects the design data of the pattern drawn on the substrate 9 and generates drawing data.
  • the exposure apparatus 3 performs drawing (that is, exposure) on the substrate 9 based on the drawing data sent from the data processing apparatus 2.
  • the data processing device 2 and the exposure device 3 may be physically separated as long as data can be exchanged between the two devices, or may be provided integrally.
  • FIG. 4 is a diagram showing the configuration of the data processing device 2.
  • the data processing device 2 has a general computer system configuration including a CPU 201 that performs various arithmetic processes, a ROM 202 that stores basic programs, and a RAM 203 that stores various information.
  • the data processing apparatus 2 includes a fixed disk 204 that stores information, a display 205 that displays various information such as images, a keyboard 206a and a mouse 206b that receive input from an operator, an optical disk, a magnetic disk, and a magneto-optical disk.
  • a reading / writing device 207 that reads and writes information from the computer-readable recording medium R1 and a communication unit 208 that transmits and receives signals to and from other components of the drawing device 1.
  • the program R2 is read from the recording medium R1 via the reading / writing device 207 in advance and stored in the fixed disk 204.
  • the CPU 201 implements the functions described later by executing arithmetic processing while using the RAM 203 and the fixed disk 204 according to the program R2 (that is, when the computer executes the program).
  • FIG. 5 is a block diagram showing functions of the data processing device 2.
  • the data processing device 2 includes a data correction device 21 and a data conversion unit 22.
  • the data correction device 21 corrects design data of a pattern formed on the substrate 9 by etching.
  • the data correction device 21 includes a design data storage unit 211, a reference information generation unit 212, a reference information storage unit 213, a lower surface etching amount acquisition unit 214, and a data correction unit 216.
  • the data converter 22 receives design data corrected by the data correction device 21 (hereinafter referred to as “corrected data”).
  • the corrected data is usually vector data such as polygons.
  • the data converter 22 converts corrected data that is vector data into drawing data that is raster data.
  • the function of the data processing device 2 may be realized by a dedicated electrical circuit, or a dedicated electrical circuit may be partially used.
  • the exposure apparatus 3 includes a drawing controller 31, a stage 32, a light emitting unit 33, and a scanning mechanism 35.
  • the drawing controller 31 controls the light emitting unit 33 and the scanning mechanism 35.
  • the stage 32 holds the substrate 9 below the light emitting unit 33.
  • the light emitting unit 33 includes a light source 331 and a light modulating unit 332.
  • the light source 331 emits laser light toward the light modulation unit 332.
  • the light modulator 332 modulates light from the light source 331.
  • the light modulated by the light modulation unit 332 is irradiated onto the substrate 9 on the stage 32.
  • a DMD digital mirror device in which a plurality of light modulation elements are two-dimensionally arranged is used as the light modulation unit 332.
  • the light modulation unit 332 may be a modulator or the like in which a plurality of light modulation elements are arranged one-dimensionally.
  • the scanning mechanism 35 moves the stage 32 in the horizontal direction. Specifically, the stage 32 is moved by the scanning mechanism 35 in the main scanning direction and the sub-scanning direction perpendicular to the main scanning direction. As a result, the light modulated by the light modulator 332 is scanned on the substrate 9 in the main scanning direction and the sub-scanning direction.
  • a rotation mechanism that rotates the stage 32 horizontally may be provided.
  • an elevating mechanism that moves the light emitting unit 33 in the vertical direction may be provided.
  • the scanning mechanism 35 is not necessarily a mechanism that moves the stage 32 as long as the light from the light emitting unit 33 can be scanned on the substrate 9.
  • the light emitting unit 33 may be moved above the stage 32 by the scanning mechanism 35 in the main scanning direction and the sub scanning direction.
  • 6A to 6C are views for explaining etching on the substrate 9 and are cross-sectional views of the substrate 9.
  • a conductor film 8 made of a conductive material such as metal (for example, copper) is formed on the main surface of the substrate 9 in advance.
  • a mask pattern 71 is formed on the conductor film 8.
  • the main surface of the substrate 9 is, for example, the surface of an insulating layer (which may be the substrate 9 itself) provided on the substrate 9.
  • the thicknesses of the conductor film 8 and the mask pattern 71 are determined in advance.
  • the mask pattern 71 is a set of a plurality of mask elements 711.
  • the removal of the conductor film 8 by the etching solution proceeds approximately isotropically from the region of the upper surface of the conductor film 8 that is not covered with the mask element 711, and as shown in FIG. 6C, the mask element 711, the substrate 9 and It extends to the area between.
  • the width of the upper surface in contact with the mask element 711 is narrower than the width of the lower surface in contact with the substrate 9. That is, the cross-sectional shape of the pattern element 811 is a trapezoid.
  • FIG. 6C shows only the vicinity of one side wall of each pattern element 811 having a trapezoidal cross-sectional shape.
  • a plurality of pattern elements 811 corresponding to the plurality of mask elements 711 included in the mask pattern 71 are separated from each other, and a set of the plurality of pattern elements 811 becomes a pattern of the conductor film 8.
  • the data correction device 21 is prepared by storing reference information used in processing described later in the reference information storage unit 213 (step S11). Details of the reference information will be described later. Further, design data of a pattern to be formed on the substrate 9 by etching is input to the data correction device 21 and stored in the design data storage unit 211 (step S12).
  • a substrate 9 (hereinafter referred to as “processed substrate 9”) on which a pattern indicated by design data is drawn on the resist film by the exposure apparatus 3 and further processed such as development, etching, and resist removal is prepared. Is done.
  • the processed substrate 9 has the same shape and size as the substrate 9 on which drawing is performed in step S17 described later.
  • the pattern indicated by the design data includes a test pattern in addition to the wiring pattern to be formed on the substrate 9.
  • FIG. 8 is an enlarged plan view showing a part of the processed substrate 9 and shows a test pattern region.
  • Each of the plurality of pattern elements 811 indicating the test pattern is substantially linear extending in one direction.
  • two pattern elements 811 adjacent to each other are used as pattern element pairs 810, and a plurality of pattern element pairs 810 are formed on the processed substrate 9.
  • FIG. 9 is a diagram showing one pattern element pair 810 on the processed substrate 9, and shows a cross section perpendicular to the longitudinal direction of the pattern element 811.
  • two mask elements 711 used for forming two pattern elements 811 of the pattern element pair 810 are indicated by two-dot chain lines.
  • the two mask elements 711 corresponding to each pattern element pair 810 are referred to as “mask element pairs 710”.
  • the plurality of pattern element pairs 810 in the processed substrate 9 are formed by etching using the plurality of mask element pairs 710, respectively. Specifically, first, a plurality of mask element pairs 710 are formed by drawing on the resist film by the exposure apparatus 3 and developing the resist film. Two mask elements 711 included in each mask element pair 710 are adjacent to each other on the conductor film 8. When the width G of the gap between the two mask elements 711 of the mask element pair 710 is defined as the mask gap width G, a plurality of mask gap widths G different from each other are set in the plurality of mask element pairs 710, respectively.
  • a plurality of pattern element pairs 810 of the conductor film 8 are formed by using the plurality of mask element pairs 710 by etching using the etching solution type, concentration, temperature, processing time, and the like as predetermined setting conditions.
  • the plurality of mask elements 711 are removed by resist peeling.
  • the width of the upper surface in contact with the mask element 711 is narrower than the width of the lower surface in contact with the substrate 9.
  • the distance from the edge defining the mask gap width G to the edge of the upper surface of the pattern element 811 corresponding to the mask element 711 (of the pattern element 811) The distance in the direction perpendicular to the longitudinal direction and along the main surface of the substrate 9 is called “upper surface etching amount ET”, and the distance to the lower surface edge of the pattern element 811 is called “lower surface etching amount EB”.
  • the upper surface etching amount ET and the lower surface etching amount EB vary depending on the mask gap width G.
  • images of the upper surfaces of the plurality of pattern element pairs 810 of the processed substrate 9 are acquired, and the width of the gap between the upper surfaces of the pattern element pairs 810 is acquired based on the images.
  • the upper surface gap width GT is measured. Note that the inspection apparatus 4 may be provided in the drawing apparatus 1.
  • the measured value of the upper surface gap width GT of each pattern element pair 810 is input to the lower surface etching amount acquisition unit 214.
  • the lower surface etching amount acquisition unit 214 specifies the mask gap width G of the mask element pair 710 used for forming each pattern element pair 810 from the design data used for drawing the pattern of the processed substrate 9. Then, half of the value obtained by subtracting the mask gap width G from the measured value of the upper surface gap width GT is acquired as the measured value of the upper surface etching amount ET (step S13). In the present embodiment, it is assumed that the position, shape, and size of each mask element 711 of the mask pattern 71 exactly match the pattern indicated by the design data.
  • FIG. 10 is a diagram illustrating an example of reference information.
  • the change with time of the upper surface etching amount ET in etching is indicated by a line L1
  • the change with time of the lower surface etching amount EB is indicated by a line L2.
  • the reference information substantially indicates the relationship between the upper surface etching amount ET and the lower surface etching amount EB of the pattern element pair 810 formed on the conductor film 8 by etching using the mask element pair 710.
  • the upper surface etching amount ET gradually increases as the processing time elapses from the etching start time.
  • the etching solution reaches the surface of the substrate 9 at a time when a predetermined time has elapsed from the etching start time (see the shape E2 of the conductor film 8 indicated by a two-dot chain line in FIG. 6B), and the lower surface etching amount EB is processed from that time. It gradually increases over time. 9, when the edge of the lower surface of the pattern element 811 is positioned between the mask element pairs 710, the lower surface etching amount EB is a negative value, and the edge is positioned below the mask element 711. In addition, the lower surface etching amount EB is a positive value.
  • the reference information is generated for each of the plurality of mask gap widths G. Processing for generating reference information will be described later.
  • the lower surface etching amount acquisition unit 214 for example, when the measured value of the upper surface etching amount ET in one mask gap width G is D1, the line L1 indicating the change in the upper surface etching amount ET in FIG. A processing time T1 is specified. Then, the distance D2 at the processing time T1 on the line L2 indicating the change in the lower surface etching amount EB is acquired as the value of the lower surface etching amount EB. In this way, by referring to the reference information using the measured value of the upper surface etching amount ET for each mask gap width G, a plurality of lower surface etching amounts EB for a plurality of mask gap widths G with respect to the processed substrate 9. Is obtained (step S14). Regarding the relationship between the mask gap width G and the lower surface etching amount EB, typically, as the mask gap width G decreases, the lower surface etching amount EB gradually decreases, and the rate of change gradually increases.
  • the data correction unit 216 corrects the design data stored in the design data storage unit 211 based on the values of the plurality of bottom surface etching amounts EB in the plurality of mask gap widths G, and generates corrected data (step S15). ).
  • the correction of the design data it is considered that the conductor film 8 on the substrate 9 is excessively etched (that is, exceeds the desired amount) according to the lower surface etching amount EB. That is, with reference to the values of the plurality of bottom surface etching amounts EB in the plurality of mask gap widths G, the bottom surface of each pattern element 811 in the pattern on the substrate 9 after etching is formed with a desired line width and size.
  • correction is performed to change the line width and size of the pattern elements included in the wiring pattern of the design data.
  • the value of the lower surface etching amount EB of the gap width (the gap width of the mask element 711) different from the plurality of mask gap widths G is obtained by various interpolation operations, and the gap width and the lower surface etching amount EB are calculated.
  • An etching curve indicating the relationship is used for correcting the design data. Note that the shape of the pattern element included in the test pattern of the design data is not changed (corrected).
  • the corrected data is sent from the data correction unit 216 to the data conversion unit 22.
  • the corrected data that is vector data is converted into drawing data that is raster data (step S16).
  • the drawing data is sent from the data converter 22 to the drawing controller 31 of the exposure apparatus 3.
  • drawing is performed on the substrate 9 by controlling the light modulation unit 332 and the scanning mechanism 35 of the light emitting unit 33 by the drawing controller 31 based on the drawing data (step S17).
  • a plurality of pattern elements 811 indicating a wiring pattern (and a test pattern) are formed on the substrate 9 by performing processing such as development and etching on the substrate 9 on which drawing has been performed.
  • step S13 in FIG. 7 corresponds to the inspection process in step S6 in FIG. 2, and steps S14 and S15 correspond to the design data correction process in step S7.
  • Step S16 corresponds to the drawing data creation process of step S2
  • step S17 corresponds to the drawing process of step S3. Accordingly, steps S13 to S17 of FIG. 7 are repeated in the repetition of steps S2 to S7 of FIG. At this time, a pattern is drawn in step S17, and the substrate 9 on which the wiring pattern is formed through steps S4 and S5 is set as the processed substrate 9, and steps S13 to S17 are performed on the other substrates 9. Note that steps S11 and S12 in FIG. 7 are included in step S1 in FIG.
  • the etching interface which is a surface in contact with the etching solution in the conductor film 8 has a shape denoted by reference numeral E 1 in FIG. 6B and a shape denoted by reference numeral E 2, and a shape denoted by reference numeral E 3 in FIG. 6C.
  • the etching proceeds at a substantially constant rate at an etching interface.
  • the shape of the etching interface can be expressed by a polynomial with respect to time.
  • the time required from the start of etching until the etching interface becomes the shape E2 is an etching rate obtained in advance by experiments or the like (that is, a distance at which etching proceeds per unit time, And the thickness of the conductor film 8.
  • the time change ET (t) of the top surface etching amount ET and the time change EB (t) of the bottom surface etching amount EB in the process from the etching interface E2 to the shape E3 are expressed by Equations 1 and 2, respectively. It is expressed by In Equations 1 and 2, t is the time from the time when the etching interface reaches the surface of the substrate 9.
  • Equations (3) and (4) are substantially polynomials that formulate changes in the shape of the pattern element pair 810 in etching (changes from the shape E2).
  • the coefficients a0, a1, a2, b0, b1, b2 in Equations 3 and 4 are determined for each of the plurality of mask gap widths G.
  • the coefficients a0 and b0 in the equations 3 and 4 are the upper surface etching amount ET and the lower surface etching amount EB when t is 0, that is, when the etching interface reaches the surface of the substrate 9.
  • the coefficients a2 and b2 in Equations 3 and 4 are determined using a test substrate on which etching has been performed. Specifically, a plurality of mask element pairs 710 each having a plurality of mask gap widths G are formed on the conductor film 8 of the test substrate, and a plurality of patterns are formed using the plurality of mask element pairs 710. Element pair 810 is formed by etching.
  • the test substrate is preferably the same in shape and size as the substrate 9 described above.
  • the type, concentration, temperature, and processing time of the etching solution in the etching are the same as the processing for the above-described processed substrate 9.
  • the processing time for etching the test substrate may be changed within a range in which a plurality of pattern element pairs 810 corresponding to the plurality of mask element pairs 710 are appropriately formed.
  • the inspection apparatus 4 measures the upper surface gap width GT (see FIG. 9) of the plurality of pattern element pairs 810 on the test substrate. Further, the lower surface gap width GB, which is the width of the gap between the lower surfaces of each pattern element pair 810, is also measured.
  • the measured values of the upper surface gap width GT and the lower surface gap width GB of the plurality of pattern element pairs 810 that is, the measured values of the upper surface gap width GT and the lower surface gap width GB in the plurality of mask gap widths G are the processing time for etching the test substrate. At the same time, it is input to the reference information generation unit 212.
  • the lower surface gap width GB (and the upper surface gap width GT) may be measured using a microscope or the like.
  • the time from the start of etching until the etching interface reaches the surface of the substrate 9 (the time until the etching interface becomes the shape E2) is Tm
  • the time Tm is obtained from the etching rate and the thickness of the conductor film 8.
  • the reference information generating unit 212 obtains values (measured values) of the upper surface etching amount ET and the lower surface etching amount EB from the measured values of the upper surface gap width GT and the lower surface gap width GB in each mask gap width G.
  • Equation 3 where the coefficients a0 and a1 are determined, a value obtained by subtracting the time Tm from the etching time of the test substrate is substituted for t, and a measured value of the top surface etching amount ET is substituted for ET (t).
  • the coefficient a2 is obtained.
  • Equation 4 where the coefficients b0 and b1 are determined, a value obtained by subtracting the time Tm from the etching time of the test substrate is substituted for t, and a measured value of the bottom surface etching amount EB is substituted for EB (t). By doing so, the coefficient b2 is obtained.
  • the reference information generation unit 212 determines the coefficients a0, a1, a2, b0, b1, b2 in Equations 3 and 4 for each mask gap width G, thereby etching the upper surface etching amount of the pattern element pair 810 in etching.
  • Reference information (see FIG. 10) indicating the change with time of ET and the change with time of lower surface etching amount EB is acquired.
  • the reference information substantially indicates the relationship between the upper surface etching amount ET and the lower surface etching amount EB of the pattern element pair 810.
  • the reference information may be generated by a computer outside the data correction device 21 and input to the reference information storage unit 213.
  • the reference information indicating the relationship between the upper surface etching amount ET of the pattern element pair 810 and the lower surface etching amount EB in the reference information storage unit 213 includes a plurality of mask gap widths G. Stored for each of the. Further, in the processed substrate 9 etched using the plurality of mask element pairs 710 in which the plurality of mask gap widths G are respectively set, each of the plurality of pattern element pairs 810 corresponding to the plurality of mask element pairs 710 is provided. The measured value of the upper surface etching amount ET is obtained.
  • the design data is corrected based on the above. Thereby, it is possible to easily correct the design data based on the lower surface of the pattern of the conductor film 8.
  • the conductive film 8 is etched to the surface of the substrate 9 (that is, the state when the etching interface reaches the surface of the substrate 9). )
  • the change in the shape of the pattern element pair 810 when the conductor film 8 is etched along the surface is formulated by a time polynomial.
  • the coefficient of the polynomial is determined by fitting using the measured value of the shape of the pattern element pair 810 on the test substrate that has been etched for a predetermined time. Thereby, reference information can be acquired easily.
  • the processed substrate 9 on which the pattern is formed based on the design data may be handled as a test substrate.
  • etching conditions for example, the temperature of the etching solution
  • the measured value of the upper surface etching amount ET of the plurality of mask gap widths G in the processed substrate 9 varies.
  • the lower surface etching amount acquisition unit 214 specifies the processing time corresponding to the measured value of the upper surface etching amount ET in the reference information of FIG. 10, and acquires the value of the lower surface etching amount EB corresponding to the processing time. . That is, the variation in the measured value of the upper surface etching amount ET due to a slight change in the etching conditions is substantially converted into the variation in the etching processing time, and the value of the lower surface etching amount EB is obtained with high accuracy. Thereby, the correction of the design data based on the lower surface of the pattern of the conductor film 8 (correction with respect to the original design data) can be performed with high accuracy.
  • the etching amount (upper surface etching amount ET and lower surface etching amount EB) may differ depending on the position on the substrate 9.
  • test patterns are arranged at a plurality of positions P (hereinafter referred to as “target positions P”) on the processed substrate 9. That is, a plurality of pattern element pairs 810 corresponding to a plurality of mask gap widths G are formed at each of a plurality of target positions P.
  • the measured values of the upper surface etching amounts ET of the plurality of pattern element pairs 810 are obtained at each target position P (step S13). Subsequently, in the reference information of each mask gap width G (see FIG. 10), the processing time corresponding to the measured value of the upper surface etching amount ET of the mask gap width G at each target position P is specified, and the processing time corresponds to the processing time. The value of the bottom surface etching amount EB to be acquired is acquired (step S14).
  • the difference in the etching amount depending on the position on the substrate 9 (difference in the measured value of the upper surface etching amount ET) is substantially converted into the difference in the etching processing time using the same reference information, and the lower surface etching is performed.
  • the value of the quantity EB is acquired.
  • the data correction unit 216 corrects the design data based on the plurality of bottom surface etching amounts EB at the plurality of target positions P, and generates corrected data (step S15).
  • the design data is corrected in consideration of the difference in the etching amount depending on the position on the substrate 9.
  • the corrected data is converted into drawing data (step S16), and drawing on the substrate 9 is performed based on the drawing data (step S17).
  • the data correction device 21 refers to the same reference information regarding each mask gap width G when the test pattern is arranged at each of the plurality of target positions P on the processed substrate 9.
  • the values of the plurality of bottom surface etching amounts EB at the plurality of target positions P are acquired. Accordingly, it is possible to easily perform highly accurate correction of the design data based on the values of the plurality of lower surface etching amounts EB.
  • the upper surface gap width GT which is the width of the gap between the upper surfaces of the pattern element pair 810
  • the lower surface gap width GB which is the width of the gap between the lower surfaces of the pattern element pair 810
  • the lower surface gap width GB is a value obtained by adding the mask gap width G to twice the lower surface etching amount EB. Therefore, in each mask gap width G, it is possible to treat the lower surface gap width GB and the lower surface etching amount EB as equivalent.
  • reference information that substantially indicates the relationship between the upper surface gap width GT and the lower surface gap width GB of the pattern element pair 810 is provided for each of the plurality of mask gap widths G.
  • the lower surface etching amount acquisition unit 214 refers to the reference information using the measured value of the upper surface gap width GT in the processed substrate 9, so that a plurality of mask gap widths G in a plurality of mask gap widths G are obtained. It can be understood as a lower surface gap width acquisition unit that acquires the value of the lower surface gap width GB.
  • the data correction unit 216 substantially corrects the design data based on the values of the plurality of lower surface gap widths GB in the plurality of mask gap widths G.
  • FIG. 12 is a block diagram illustrating functions of the inspection apparatus 4a.
  • the inspection device 4a is a device that inspects a pattern formed on the substrate 9 by etching after drawing based on design data.
  • the inspection device 4a has a general computer system configuration, similar to the data processing device 2 shown in FIG.
  • the inspection apparatus 4a includes a design data storage unit 41, a reference information storage unit 42, an actual image storage unit 43, an upper surface gap width acquisition unit 44, a data correction unit 45, and a defect detection unit 46.
  • the design data storage unit 41 and the reference information storage unit 42 are the same as the design data storage unit 211 and the reference information storage unit 213 in FIG.
  • the real image storage unit 43 stores image data indicating the upper surface of the pattern of the conductor film 8 formed on the substrate 9 to be inspected (hereinafter referred to as “target substrate 9”) as inspection image data.
  • the upper surface gap width acquisition unit 44 acquires a measured value of the upper surface gap width GT (see FIG. 9) of the pattern element pair 810 included in the test pattern based on the inspection image data.
  • the data correction unit 45 acquires the shape of the lower surface of the pattern on the target substrate 9 from the pattern of the conductor film 8 indicated by the inspection image data, using the measured value of the upper surface gap width GT.
  • the defect detection unit 46 detects a defect of the pattern based on the shape of the lower surface of the pattern of the conductor film 8.
  • reference information indicating the relationship between the upper surface gap width GT and the lower surface gap width GB of the pattern element pair 810 is stored in the reference information storage unit 42 for each of the plurality of mask gap widths G.
  • the reference information is generated by a reference information generation unit provided in an external computer or the inspection apparatus 4a.
  • the design data used when forming the pattern of the conductor film 8 on the target substrate 9 is prepared by being stored in the design data storage unit 41 (step S22).
  • image data indicating the upper surface of the pattern of the conductor film 8 formed on the target substrate 9 is acquired, and the image data is stored as inspection image data in the actual image storage unit 43 (step S23).
  • the pattern of the conductor film 8 on the target substrate 9 is developed based on the design data to form a resist film mask pattern 71 by developing the pattern drawn on the resist film on the substrate 9. It is a pattern formed on the target substrate 9 by etching using it. Similar to the processing described with reference to FIG. 7, the pattern indicated by the design data includes a test pattern in addition to the wiring pattern. Therefore, a plurality of pattern element pairs 810 are formed on the target substrate 9 using a plurality of mask element pairs 710 each having a plurality of mask gap widths G set.
  • the inspection image data is acquired outside the inspection apparatus 4a or by an imaging unit provided in the inspection apparatus 4a.
  • the upper surface gap width acquisition unit 44 acquires the measured value of the upper surface gap width GT of each of the plurality of pattern element pairs 810 included in the test pattern based on the inspection image data (step S24). That is, the measured values of the plurality of upper surface gap widths GT respectively corresponding to the plurality of mask gap widths G are acquired.
  • one pattern element 811 on the target substrate 9 is set as a target pattern element 811, and a mask element 711 used for forming the target pattern element 811 and a mask element 711 adjacent to the mask element 711 are included.
  • the width of the gap between them is specified as the gap width of the mask element 711 based on the design data.
  • the value of the lower surface gap width GB is determined. To be acquired.
  • the line width and size of the region of the target pattern element 811 are set to, for example, the difference between the measured value of the upper surface gap width GT and the value of the lower surface gap width GB (more precisely, FIG.
  • the shape of the lower surface of the target pattern element 811 on the target substrate 9 is acquired.
  • the difference in the gap width different from the mask gap width G may be obtained by various interpolation operations, and a curve indicating the relationship between the difference and the gap width may be generated.
  • the difference corresponding to the gap width of the mask element 711 with respect to the target pattern element 811 is acquired from the curve and used for changing the line width and size of the region of the target pattern element 811.
  • the reference information of the mask gap width G specified from the design data is substantially referred to the target pattern element 811 using the measured value of the mask gap width G. Can be considered.
  • the data correction unit 45 forms the pattern on the target substrate 9 from the pattern indicated by the inspection image data by performing the above-described processing with each of the pattern elements 811 included in the wiring pattern on the target substrate 9 as the target pattern element 811.
  • the shape of the lower surface of the pattern of the conductor film 8 thus obtained is acquired (step S25).
  • the defect detection unit 46 a defect in the pattern of the conductor film 8 on the target substrate 9 is detected based on the shape of the lower surface of the pattern acquired by the data correction unit 45 (step S26).
  • both pattern elements 811 is detected as a defect.
  • Defect detection may be performed by various techniques.
  • the reference information indicating the relationship between the upper surface gap width GT and the lower surface gap width GB of the pattern element pair 810 is prepared for each of the plurality of mask gap widths G.
  • inspection image data that is image data of the upper surface of the pattern formed on the target substrate 9 is prepared, and based on the inspection image data, the measured value of the upper surface gap width GT of each of the plurality of pattern element pairs 810 is obtained. To be acquired.
  • each pattern element 811 of the pattern on the target substrate 9 by referring to the reference information of the mask gap width G specified from the design data using the measurement value for the mask gap width G, an inspection image is obtained.
  • the shape of the lower surface of the pattern on the target substrate 9 is acquired from the pattern indicated by the data. As a result, it is possible to easily perform an inspection based on the lower surface of the pattern of the conductor film 8.
  • the data correction device 21, the drawing device 1, the wiring pattern forming system 10, and the inspection device 4a can be variously changed.
  • step S11 and step S12 may be interchanged in the process of FIG. 7 (the same applies to steps S21 and S22 of FIG. 13).
  • the substrate 9 may be a semiconductor substrate, a glass substrate, or the like other than the printed circuit board.
  • the data correction device 21 may be used independently from the drawing device 1.

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  • Engineering & Computer Science (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
PCT/JP2016/071306 2015-09-25 2016-07-20 データ補正装置、描画装置、配線パターン形成システム、検査装置、データ補正方法および配線基板の製造方法 WO2017051599A1 (ja)

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JP2004207611A (ja) * 2002-12-26 2004-07-22 Toshiba Corp プリント配線板製造装置およびプリント配線板製造方法エッチング装置
JP2005116942A (ja) * 2003-10-10 2005-04-28 Fuji Photo Film Co Ltd 製造支援システムおよびプログラム

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KR101678070B1 (ko) * 2009-12-24 2016-11-22 삼성전자 주식회사 마스크리스 노광장치 및 그 제어방법
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JP6491974B2 (ja) * 2015-07-17 2019-03-27 日立化成株式会社 露光データ補正装置、配線パターン形成システム、及び配線基板の製造方法

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JP2000047263A (ja) * 1998-07-31 2000-02-18 Fujitsu Ltd エッチング方法、薄膜トランジスタマトリックス基板、およびその製造方法
JP2004207611A (ja) * 2002-12-26 2004-07-22 Toshiba Corp プリント配線板製造装置およびプリント配線板製造方法エッチング装置
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