WO2017022373A1 - 温度センサ - Google Patents
温度センサ Download PDFInfo
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- WO2017022373A1 WO2017022373A1 PCT/JP2016/069240 JP2016069240W WO2017022373A1 WO 2017022373 A1 WO2017022373 A1 WO 2017022373A1 JP 2016069240 W JP2016069240 W JP 2016069240W WO 2017022373 A1 WO2017022373 A1 WO 2017022373A1
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- temperature sensor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
- G01K7/223—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor characterised by the shape of the resistive element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
- H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
- H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
- H01C17/06526—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of metals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
- H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
- H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
- H01C17/06553—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of a combination of metals and oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
- H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
- H01C17/06573—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the permanent binder
- H01C17/06586—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the permanent binder composed of organic material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
- H01C17/281—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals by thick film techniques
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/003—Thick film resistors
- H01C7/005—Polymer thick films
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/008—Thermistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
- H01C7/027—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient consisting of conducting or semi-conducting material dispersed in a non-conductive organic material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
- H01C7/049—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of organic or organo-metal substances
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
- H01C1/142—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals or tapping points being coated on the resistive element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
Definitions
- the thermistor layer 5 is disposed on the electrode layers 1 and 3 shown in FIG. As shown in FIG. 1C, the thermistor layer 5 exists between the electrode line of one electrode layer 1 and the electrode line of the other electrode layer 3. By arranging the electrode layers 1 and 3 and the thermistor layer 5 in this way, the temperature sensor according to this embodiment is obtained.
- the average particle size of the powder of the semiconductor ceramic composition is preferably 2 ⁇ m or less.
- the connection between the powders of the semiconductor ceramic composition can be efficiently formed in the thermistor layer, and the conductive path (percolation path) is efficiently performed. Can be well formed.
- a temperature sensor having excellent thermistor characteristics can be obtained.
- variation in the B constant can be reduced. Specifically, for example, a temperature sensor having a B constant of 2500 K or more and a variation of the B constant within ⁇ 2.5% can be obtained. A method for calculating the variation of the B constant will be described later.
- the content of the semiconductor ceramic composition powder in the thermistor layer can be reduced when the average particle size of the powder of the semiconductor ceramic composition is 2 ⁇ m or less, the content of the organic polymer component in the thermistor layer is reduced. Can be increased. As a result, the flexibility of the thermistor layer is improved, and even when the temperature sensor is bent, the occurrence of cracks and the like in the thermistor layer can be suppressed, and the temperature sensor can function. Furthermore, when the average particle size is 2 ⁇ m or less, the thickness of the thermistor layer can be reduced, and the flexibility of the thermistor layer can be further improved.
- a temperature sensor having a high B constant of 2500 K or more can be obtained both when a thermosetting resin is used as the organic polymer component and when a thermoplastic resin is used.
- thermosetting resin and a thermoplastic resin may be used in combination.
- thermoplastic resin By combining the thermoplastic resin with the thermosetting resin, the flexibility of the thermistor layer can be improved.
- the organic polymer component may further contain a phthalate ester, an adipic acid ester, an aliphatic dibasic acid ester, or the like as a plasticizer that imparts flexibility to the thermistor layer.
- the organic polymer component may contain, in addition to the above-described components, a dispersant for improving the dispersibility of the semiconductor ceramic composition, a conductive auxiliary agent for reducing the resistance of the entire thermistor layer, and the like.
- a raw material mixture containing powders of Mn source, Ni source and Fe source is pulverized.
- Mn source for example, Mn 3 O 4 , MnCO 3 or the like may be used.
- Ni source for example, NiO, NiCO 3 or the like may be used.
- Fe 2 O 3 or the like may be used as the Fe source.
- the composition ratio of each element in the raw material mixture may be regarded as substantially the same as the composition of each element in the powder of the semiconductor ceramic composition contained in the thermistor layer of the obtained temperature sensor.
- This raw material mixture is pulverized.
- the method of pulverizing the raw material mixture is not particularly limited, and for example, wet pulverization may be performed together with a pulverization medium (for example, pulverization medium made of zirconia) using a ball mill.
- the raw material mixture thus pulverized is heat-treated at a temperature of 700 ° C. or higher and 900 ° C. or lower to obtain a semiconductor ceramic composition.
- the ratio of the elements constituting the raw material mixture is designed as described above, so that it has a spinel structure and a large B constant even at a relatively low heat treatment temperature of less than 1000 ° C.
- a semiconductor ceramic composition can be obtained.
- the amount of heterogeneous phase present in the semiconductor ceramic composition obtained by the above heat treatment is small, variation in the B constant in the obtained temperature sensor can be reduced.
- the heat treatment is preferably performed in the atmosphere. By performing the heat treatment in the atmosphere, the growth of the particles of the semiconductor ceramic composition can be suppressed.
- the heat treatment may be performed in a nitrogen atmosphere or an oxygen atmosphere.
- the oxygen partial pressure may be appropriately changed in order to obtain a desired semiconductor ceramic composition.
- the above-mentioned semiconductor ceramic composition is pulverized to obtain a semiconductor ceramic composition powder having an average particle size of 2 ⁇ m or less.
- the semiconductor ceramic composition can be atomized by pulverization, and a semiconductor ceramic composition powder having an average particle size of 2 ⁇ m or less can be obtained.
- the method for pulverizing the semiconductor ceramic composition is not particularly limited, and for example, wet pulverization may be performed by a ball mill method, or dry pulverization may be performed.
- the specific surface area of the powder of the raw material semiconductor ceramic composition is preferably 2 m 2 / g or more and 12 m 2 / g or less.
- the specific surface area is 2 m 2 / g or more, the connection between the powders of the semiconductor ceramic composition can be efficiently formed in the thermistor layer, and the conductive path (percolation path) can be efficiently formed.
- the conductive path percolation path
- variation in the B constant can be reduced. Specifically, for example, a temperature sensor having a B constant of 2500 K or more and a variation of the B constant within ⁇ 2.5% can be obtained.
- the powder of the semiconductor ceramic composition can be efficiently dispersed in the thermistor layer, and generation of coarse aggregates can be suppressed.
- the specific surface area of the powder of the semiconductor ceramic composition can be measured by a gas adsorption method. Note that the specific surface area of the powder of the semiconductor ceramic composition before preparing the thermistor layer paste may be considered to be the same as the specific surface area of the semiconductor ceramic composition present in the thermistor layer of the finished temperature sensor.
- the thermistor layer paste containing the semiconductor porcelain composition powder and the organic polymer component is obtained by mixing the thus obtained semiconductor porcelain composition powder and the organic polymer component.
- the ratio of the semiconductor ceramic composition and the organic polymer component is preferably set so that the PVC of the semiconductor ceramic composition is in the range of 30% to 70%.
- the thermistor layer paste may be mixed, for example, by kneading with a mortar or a three roll mill. Aggregates that may be contained in the paste may be removed by passing the obtained thermistor layer paste through a sieve such as a stainless mesh. The mesh opening can be appropriately selected according to the size of the aggregate to be removed.
- the viscosity of the thermistor layer paste may be adjusted to a viscosity suitable for printing by adding a solvent to the thermistor layer paste and stirring.
- the stirring method is not particularly limited as long as the thermistor layer paste and the solvent can be uniformly stirred.
- the stirring may be performed using a rotation and revolution type stirring deaerator.
- the solvent for example, ethylene glycol, cellosolve, carbitol, butyl carbitol, butyl carbitol acetate, dipropylene glycol methyl ether acetate or the like may be used.
- the addition amount of the solvent can be appropriately adjusted according to the viscosity of the desired thermistor layer paste.
- the electrode layer paste and the thermistor layer paste are printed in a predetermined pattern on the flexible substrate to obtain a temperature sensor including the thermistor layer, the pair of electrode layers, and the flexible substrate.
- the electrode layer paste generally available silver paste (for example, REXALPHA series manufactured by TOYOCHEM) and copper paste can be used.
- the electrode layer paste and the thermistor layer paste can be printed using a technique such as screen printing.
- the printing thickness of the electrode layer paste and the thermistor layer paste can be appropriately set according to the thickness of the electrode layer and the thermistor layer to be formed.
- the printed thickness of the electrode layer paste may be set, for example, so that the thickness of the electrode layer after the heat treatment is 1 ⁇ m or more and 50 ⁇ m or less.
- the printed thickness of the thermistor layer paste may be set so that, for example, the thickness of the thermistor layer after heat treatment is 200 ⁇ m or less, more preferably 5 ⁇ m or more and 50 ⁇ m or less.
- thermosetting resin can be cured by performing a heat treatment.
- the thermosetting resin contained in an electrode layer paste can be hardened by performing heat processing.
- the heat treatment is preferably performed every time one of the pastes is printed.
- the electrode layer paste is printed on the pattern corresponding to the electrode layers 1 and 3 shown in FIG.
- the thermistor layer and the pair of electrode layers can be formed by printing the layer paste in a pattern corresponding to the thermistor layer 5 shown in FIG. 1B and performing the second heat treatment. 2
- the electrode layer paste is printed in a pattern corresponding to one of the electrode layers 11, the first heat treatment is performed, and then the thermistor layer paste is applied to the thermistor layer 15.
- the corresponding pattern is printed and the second heat treatment is performed, and then the electrode layer paste is printed on the pattern corresponding to the other electrode layer 13 and the third heat treatment is performed, whereby the thermistor layer and the pair of heat treatments are performed.
- An electrode layer can be formed.
- the heat treatment may be performed after printing both the electrode layer paste and the thermistor layer. The number of steps can be reduced by such a heat treatment method.
- the above heat treatment may be performed in a hot air oven, for example.
- the heat treatment conditions can be appropriately set according to the composition of the electrode layer paste and the thermistor layer paste used.
- the heat treatment after printing the thermistor layer paste may be performed at a temperature at which the thermistor layer is sufficiently fixed.
- the organic polymer component contained in a thermistor layer is a thermosetting resin, it is preferable to heat-process at the curing temperature or more of a thermosetting resin.
- the electrode layer paste and / or the thermistor layer paste may be dried at a relatively low temperature and then further heated at a temperature higher than the drying temperature.
- the temperature sensor according to the present embodiment is obtained.
- the powder of the semiconductor ceramic composition prepared by the above-described method has a spinel structure, has a small content of unreacted substances, and a small amount of heterogeneous phase, and preferably does not substantially exist. Therefore, the temperature sensor according to this embodiment manufactured using such a powder of a semiconductor ceramic composition has a high B constant and is excellent in flexibility. Furthermore, the temperature sensor manufactured by the above-described method has an advantage that variation in the B constant is small. The variation of the B constant is preferably within ⁇ 2.5%.
- the temperature sensors of Examples 1 to 34 were produced according to the procedure described below. First, as ceramic raw materials, Mn 3 O 4 , Fe 2 O 3 , NiO, Co 3 O 4 , Al 2 O 3 and TiO 2 powders were prepared, and these powders are shown in Tables 1 and 2 A raw material mixture was obtained by weighing to obtain a proper composition. In Table 1, each column of “Mn” and “Ni” includes the percentage of the molar amount of Mn relative to the total molar amount of Mn and Ni when Mn 3 O 4 and NiO are converted into Mn and Ni, respectively. The percentages of the molar amount of Ni are shown respectively.
- the obtained semiconductor ceramic composition, pure water, and cobblestone having a diameter of 2 mm were put into a 1 L polypot and pulverized at 110 rpm for 4 hours by a ball mill method.
- the crushed slurry and cobblestone were separated with a mesh, and the slurry was poured onto a hot plate to remove moisture. Further, coarse particles were removed by passing through a mesh, and the aggregates were crushed and sized. Subsequently, it was dried at a temperature of 80 ° C. for 24 hours to obtain a semiconductor ceramic composition powder.
- XRD measurement was performed on the powder of the semiconductor ceramic composition in Examples 1 to 17.
- the obtained powder of semiconductor ceramic composition, organic polymer components (epoxy resin and phenoxy resin), and solvent were kneaded in a mortar to obtain a thermistor layer paste.
- DPMA dipropylene glycol methyl ether acetate
- the ratio of the powder of the semiconductor ceramic composition and the organic polymer component in the thermistor layer paste was adjusted so that the PVC of the powder of the semiconductor ceramic composition was in the range of 30% to 70%.
- the content of the epoxy resin and the phenoxy resin was adjusted to a weight ratio of 47:53.
- the solvent was added in an amount of about 25 wt% of the total weight of the powder of the semiconductor ceramic composition and the organic polymer component.
- the electrode layer paste and the thermistor layer paste were printed on a flexible substrate by a screen printing method and heat-treated to form a temperature sensor having a sandwich structure as shown in FIG.
- a commercially available silver paste (REXALPHA series manufactured by TOYOCHEM) was used as the electrode layer paste, and a PET film was used as the flexible substrate.
- the electrode layer paste containing the above silver particles was printed in a pattern corresponding to one electrode layer 11, and heat treatment was performed at 130 ° C. for 30 minutes in an air atmosphere.
- the thermistor layer paste was printed in a pattern corresponding to the thermistor layer 15 and heat-treated at 150 ° C. for 1 hour in an air atmosphere.
- the electrode layer paste was printed in a pattern corresponding to the other electrode layer 13 and heat-treated at 130 ° C. for 30 minutes in an air atmosphere.
- the temperature sensors of Examples 1 to 34 were obtained.
- a liquid tank filled with Fluorinert (registered trademark) having a temperature of 25 ° C. and 50 ° C. was prepared, and a resistance sensor was measured by immersing the temperature sensor in each liquid tank. Further, the B constant was calculated based on the resistance values at 25 ° C. and 50 ° C. The results are shown in Tables 1 and 2 below.
- surface shows logarithm log (rho) of specific resistance value (rho) (ohm * cm) in 25 degreeC.
- a semiconductor porcelain composition having the same composition as the semiconductor porcelain composition in Example 24, pure water, and a cobblestone having a diameter of 2 mm were put into a 1 L polypot and ground at 110 rpm by a ball mill method.
- the grinding time was varied between 4-12 hours.
- the crushed slurry and cobblestone were separated with a mesh, and the slurry was poured onto a hot plate to remove moisture. Further, coarse particles were removed by passing through a mesh, and the aggregates were crushed and sized. Subsequently, it was dried at a temperature of 80 ° C. for 24 hours to obtain a semiconductor ceramic composition powder.
- the specific surface areas of the powders of the semiconductor porcelain compositions of Examples 20, 24 and 28 were measured by a gas adsorption method. As a result of the measurement, the specific surface area of the powder of the semiconductor ceramic composition of Example 20 was 4.95 m 2 / g, the specific surface area of the powder of the semiconductor ceramic composition of Example 24 was 6.10 m 2 / g, and the semiconductor ceramic of Example 28 The specific surface area of the powder of the composition was 10.35 m 2 / g. It was confirmed that the specific surface area of any of the semiconductor ceramic composition powders was 2 to 12 m 2 / g.
- thermo sensors having comb-shaped electrode layers as shown in FIG. 1 were prepared. First, an electrode layer paste containing silver particles is printed on a flexible substrate by a screen printing method and heat-treated at 130 ° C. for 30 minutes in an air atmosphere to form a comb-shaped electrode as shown in FIG. A layer was formed. A commercially available silver paste (REXALPHA series manufactured by TOYOCHEM) was used as the electrode layer paste, and a PET film was used as the flexible substrate.
- REXALPHA series manufactured by TOYOCHEM commercially available silver paste
- the thickness of the electrode layer after the heat treatment is about 10 ⁇ m, the length of the long side of the electrode layer is 2.5 mm, the length of the short side is 1.5 mm, the width of the electrode line is 50 ⁇ m, and the distance between the electrode lines is 50 ⁇ m. there were.
- the temperature sensors of Examples 35 to 39 having a sandwich structure were produced by the method described above.
- the dimensions of the parts facing the electrode layers were set to the values shown in Table 4.
- the total thickness of the temperature sensor was set to about 26 ⁇ m.
- the resistance value of the temperature sensor was measured in a state where the flexible base material on which the temperature sensor was formed was planarized.
- the resistance value of the temperature sensor was measured in a state where the flexible substrate was wound around a pencil of ⁇ 8 mm and the temperature sensor was wound.
- the resistance value of the temperature sensor was measured in a state where the flexible base material was made flat again. In this way, the planar state and the wound state were repeated three times, and the resistance value of the temperature sensor in each state was measured. All resistance values were measured at 25 ° C. The results are shown in FIG. From FIG. 5, it was confirmed that in any of the temperature sensors of Examples 35 to 39, when the rolled state was repeated, the resistance value hardly changed and good flexibility was exhibited.
- the temperature sensors of Examples 40 to 52 having a comb structure were manufactured in the same procedure as described above.
- the heat treatment of the thermistor layer paste was performed under the conditions shown in Table 5.
- Resins shown in Table 5 were used as organic polymer components.
- the volume ratio (PVC) of the powder of the semiconductor ceramic composition was set to 46 vol%.
- the obtained temperature sensors of Examples 40 to 52 were subjected to resistance measurement in the same procedure as described above, and the B constant was calculated based on the resistance values at 25 ° C. and 50 ° C. The results are shown in Table 5.
- the temperature sensor according to the present invention has a high B constant and is excellent in flexibility, it can be applied to electronic equipment that requires a small and high-performance temperature sensor.
- Electrode layer 3 Electrode layer 101 Long side of electrode layer 102 Short side of electrode layer 5 Thermistor layer 7 Flexible substrate L Width of electrode line S Spacing between electrode lines 11 Electrode layer 13 Electrode layer 111 Long side of electrode layer 112 Electrode Short side of layer 15 Thermistor layer 17 Flexible substrate
Abstract
Description
B=(lnR-lnR0)/(1/T-1/T0)
(R:周囲温度T(K)における抵抗値、R0:周囲温度T0(K)における抵抗値)
本明細書において、特段の説明がない限り、「B定数」は、T=50℃、T0=25℃におけるB定数B25/50を意味する。
1対の電極層と
を含む温度センサであって、
半導体磁器組成物の粉末において、MnとNiとのモル比率が85/15≧Mn/Ni≧65/35であり、かつMnおよびNiの総モル量を100モル部としたとき、Feの含有量が30モル部以下であり、
半導体磁器組成物の粉末の平均粒径が2μm以下である、温度センサが提供される。
Mn源、Ni源およびFe源の粉末を含む原料混合物であって、MnとNiとのモル比率が85/15≧Mn/Ni≧65/35であり、かつMnおよびNiの総モル量を100モル部としたとき、Feの含有量が30モル部以下である原料混合物を粉砕する工程と、
粉砕した原料混合物を700℃以上900℃以下の温度で熱処理して、半導体磁器組成物を得る工程と、
前記半導体磁器組成物を粉砕して、平均粒径が2μm以下の半導体磁器組成物の粉末を得る工程と、
前記半導体磁器組成物の粉末と、有機高分子成分とを含むサーミスタ層ペーストを得る工程と、
フレキシブル基材上に、電極層ペーストおよび前記サーミスタ層ペーストを印刷して、サーミスタ層と、1対の電極層と、フレキシブル基材とを含む温度センサを得る工程と
を含む、温度センサの製造方法が提供される。
3 電極層
101 電極層の長辺
102 電極層の短辺
5 サーミスタ層
7 フレキシブル基材
L 電極線の幅
S 電極線間の間隔
11 電極層
13 電極層
111 電極層の長辺
112 電極層の短辺
15 サーミスタ層
17 フレキシブル基材
Claims (13)
- Mn、NiおよびFeを含むスピネル型半導体磁器組成物の粉末と、有機高分子成分とを含むサーミスタ層と、
1対の電極層と
を含む温度センサであって、
前記半導体磁器組成物の粉末において、MnとNiとのモル比率が85/15≧Mn/Ni≧65/35であり、かつMnおよびNiの総モル量を100モル部としたとき、Feの含有量が30モル部以下であり、
前記半導体磁器組成物の粉末は、X線回折パターンの29°~31°付近に極大値を有するピークを有し、該ピークの半値幅は0.15以上である、温度センサ。 - 前記半導体磁器組成物の粉末の平均粒径が2μm以下である、請求項1に記載の温度センサ。
- 前記半導体磁器組成物の粉末がCo、TiおよびAlからなる群から選択される1種以上を更に含み、
MnおよびNiの総モル量を100モル部としたとき、Co、TiおよびAlの含有量の合計が2.0モル部以上60モル部以下である、請求項1または2に記載の温度センサ。 - 前記半導体磁器組成物の粉末の比表面積が2m2/g以上12m2/g以下である、請求項1~3のいずれか1項に記載の温度センサ。
- 前記サーミスタ層における前記半導体磁器組成物の粉末の体積割合が30vol%以上70vol%以下である、請求項1~4のいずれか1項に記載の温度センサ。
- 前記有機高分子成分が、熱硬化性樹脂を含む、請求項1~5のいずれか1項に記載の温度センサ。
- 前記熱硬化性樹脂がエポキシ樹脂、エポキシアクリレート樹脂、フェノールノボラック型エポキシ樹脂、フェノール樹脂、ウレタン樹脂、シリコーン樹脂、ポリアミド樹脂およびポリイミド樹脂からなる群から選択される1以上の樹脂である、請求項6に記載の温度センサ。
- 前記有機高分子成分が、熱可塑性樹脂を含む、請求項1~7のいずれか1項に記載の温度センサ。
- 前記熱可塑性樹脂が、ポリビニルブチラール樹脂、硬化剤未添加のエポキシ樹脂、硬化剤未添加のフェノキシ樹脂、ポリエステルおよびポリ酢酸ビニルからなる群から選択される1以上の樹脂である、請求項8に記載の温度センサ。
- 前記有機高分子成分が、フェノキシ樹脂を更に含む、請求項6または7に記載の温度センサ。
- 前記サーミスタ層の厚さが200μm以下である、請求項1~10のいずれか1項に記載の温度センサ。
- Mn源、Ni源およびFe源の粉末を含む原料混合物であって、MnとNiとのモル比率が85/15≧Mn/Ni≧65/35であり、かつMnおよびNiの総モル量を100モル部としたとき、Feの含有量が30モル部以下である原料混合物を粉砕する工程と、
粉砕した原料混合物を700℃以上900℃以下の温度で熱処理して、半導体磁器組成物を得る工程と、
前記半導体磁器組成物を粉砕して、平均粒径が2μm以下の半導体磁器組成物の粉末を得る工程と、
前記半導体磁器組成物の粉末と、有機高分子成分とを含むサーミスタ層ペーストを得る工程と、
フレキシブル基材上に、電極層ペーストおよび前記サーミスタ層ペーストを印刷して、サーミスタ層と、1対の電極層と、フレキシブル基材とを含む温度センサを得る工程と
を含む、温度センサの製造方法。 - 前記フレキシブル基材上に前記電極層ペーストおよび前記サーミスタ層ペーストを印刷した後に熱処理を行う、請求項12に記載の方法。
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