WO2016143583A1 - 半導体用支持ガラス基板及びこれを用いた積層基板 - Google Patents
半導体用支持ガラス基板及びこれを用いた積層基板 Download PDFInfo
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- WO2016143583A1 WO2016143583A1 PCT/JP2016/056076 JP2016056076W WO2016143583A1 WO 2016143583 A1 WO2016143583 A1 WO 2016143583A1 JP 2016056076 W JP2016056076 W JP 2016056076W WO 2016143583 A1 WO2016143583 A1 WO 2016143583A1
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- glass substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
Definitions
- the present invention relates to a support glass substrate for a semiconductor and a laminated substrate using the same, and more specifically to a support glass substrate for a semiconductor used for supporting a semiconductor substrate in a manufacturing process of a semiconductor package and a laminated substrate using the same.
- Portable electronic devices such as mobile phones, notebook personal computers, and PDAs (Personal Data Assistance) are required to be smaller and lighter.
- the mounting space of semiconductor chips used in these electronic devices is also strictly limited, and high-density mounting of semiconductor chips has become a problem. Therefore, in recent years, high-density mounting of semiconductor packages has been achieved by three-dimensional mounting technology, that is, by stacking semiconductor chips and interconnecting the semiconductor chips.
- the semiconductor substrate is patterned with an accuracy of several tens of nanometers, and even if a dimensional change of only several tens of nanometers occurs, it causes a decrease in yield.
- it is effective to use a supporting glass substrate for supporting the semiconductor substrate, and it is particularly effective to use a flat supporting glass substrate.
- the present invention has been made in view of the above circumstances, and its technical problem is to contribute to high-density mounting of semiconductor packages by creating a supporting glass substrate that is difficult to break down in the manufacturing process of semiconductor packages. is there.
- the present inventor has found that the above technical problem can be solved by forming a specific roughened region on the surface of the glass substrate, and proposes as the present invention.
- the support glass substrate for a semiconductor of the present invention has a first surface that is a side on which a semiconductor substrate is laminated and a second surface that is a surface opposite to the first surface, and the first surface.
- at least one of the second surfaces has a roughened region having a surface roughness Ra of 0.3 nm or more and a surface roughness Rmax of 100 nm or less.
- surface roughness Ra and “surface roughness Rmax” are values measured in an area of 5 ⁇ m square using a scanning probe microscope (for example, Dimension Icon manufactured by Bruker). For example, when a roughened region is formed on the entire surface of the second surface of the glass substrate, with respect to nine locations in the central portion and peripheral portion of the glass substrate (the portion about 50 mm inside from the end surface of the glass substrate), It is an average value when the surface roughness Ra and Rmax are respectively measured in an area of 5 ⁇ m square.
- the support glass substrate for semiconductor of the present invention has a roughened region having a surface roughness Ra of 0.3 nm or more on at least one surface. Thereby, the contact area of a support glass substrate and a surface plate becomes small, and the charge amount in a support glass substrate can be reduced. On the other hand, if the surface roughness Rmax of the roughened region is too large, microcracks are generated in the supporting glass substrate, and the strength of the supporting glass substrate is likely to be reduced. Therefore, the support glass substrate for semiconductor of the present invention regulates the surface roughness Rmax of the roughened region to 100 nm or less.
- the roughened region is formed on the second surface of the supporting glass substrate for a semiconductor of the present invention.
- the roughened region is formed in an area ratio of 5% or more of the second surface.
- the roughened region is formed on both the first surface and the second surface. In this way, the amount of charge in the support glass substrate can be reduced not only when the support glass substrate and the surface plate are brought into contact but also when the semiconductor substrate is peeled off.
- the support glass substrate for semiconductor of the present invention has arc-shaped polishing flaws in the roughened region. If it does in this way, it will become easy to reduce not only the charge amount in a support glass substrate but the whole board thickness deviation of a support glass substrate.
- the support glass substrate for semiconductor of the present invention preferably has a total thickness deviation of 3.0 ⁇ m or less. If it does in this way, it will become easy to raise the precision of processing. In particular, since the wiring accuracy can be increased, high-density wiring is possible. Further, the strength of the supporting glass substrate is improved, and the supporting glass substrate and the laminated substrate are hardly damaged. Furthermore, the number of reuses of the supporting glass substrate can be increased.
- the “total plate thickness deviation” is a difference between the maximum plate thickness and the minimum plate thickness of the entire support glass substrate, and can be measured by, for example, a Bow / Warp measuring apparatus SBW-331ML / d manufactured by Kobelco Kaken.
- the support glass substrate for a semiconductor of the present invention has a thickness of less than 2.0 mm and a warpage amount of 60 ⁇ m or less.
- the “warp amount” refers to the sum of the absolute value of the maximum distance between the highest point and the least square focal plane in the entire supporting glass substrate and the absolute value of the lowest point and the least square focal plane. For example, it can be measured by a Bow / Warp measuring device SBW-331ML / d manufactured by Kobelco Kaken.
- the laminated substrate of the present invention is a laminated substrate comprising at least a semiconductor substrate and a supporting glass substrate for semiconductor for supporting the semiconductor substrate, and the supporting glass substrate for semiconductor is the above-described supporting glass substrate for semiconductor. Preferably there is.
- the average thermal expansion coefficient at 20 to 260 ° C. of the supporting glass substrate for semiconductor is 50 ⁇ 10 ⁇ 7 / ° C. or more, and the semiconductor substrate is molded with at least a sealing material. It is preferable to provide a semiconductor chip.
- the “average coefficient of thermal expansion at 20 to 260 ° C.” can be measured with a dilatometer.
- a fan out type WLP has been proposed as a new WLP.
- the fan-out type WLP can increase the number of pins, and can prevent chipping of the semiconductor chip by protecting the end portion of the semiconductor chip.
- the fan-out type WLP includes a step of forming a semiconductor substrate by molding a plurality of semiconductor chips with a resin sealing material and then wiring to one surface of the semiconductor substrate, a step of forming solder bumps, and the like. Since these steps involve a heat treatment at about 200 to 300 ° C., the sealing material may be deformed and the semiconductor substrate may change in dimensions. When the size of the semiconductor substrate changes, it becomes difficult to wire with high density on one surface of the semiconductor substrate, and it becomes difficult to accurately form solder bumps.
- the ratio of semiconductor chips in the semiconductor substrate is large.
- the ratio of the sealing material is small, warp deformation of the semiconductor substrate may occur. Therefore, when the average thermal expansion coefficient of the supporting glass substrate is defined as described above, warpage deformation of the semiconductor substrate can be suppressed even when the ratio of the semiconductor chip is large and the ratio of the sealing material is small in the semiconductor substrate. .
- the supporting glass substrate for semiconductor is non-alkali glass and the semiconductor substrate includes a silicon wafer.
- the “alkali-free glass” refers to a glass having an alkali component (Li 2 O, K 2 O, Na 2 O) content of 0.5% by mass or less in the glass composition.
- the supporting glass substrate for a semiconductor of the present invention has a roughened region on at least one surface, and the surface roughness Ra of the roughened region is 0.3 nm or more, preferably 0.5 nm or more, more preferably Is 0.8 nm or more, particularly preferably 1.0 to 8.0 nm. If the surface roughness Ra is too small, it is difficult to reduce the charge amount in the support glass substrate. On the other hand, when the surface roughness Ra is too large, the treatment time for the roughening treatment becomes long, and the production cost of the supporting glass substrate tends to increase.
- the surface roughness Rmax of the roughened region is 100 nm or less, preferably 80 nm or less, more preferably 50 nm or less, and particularly preferably 30 nm or less. If the surface roughness Rmax is too large, microcracks are generated in the supporting glass substrate, and the strength of the supporting glass substrate is likely to be reduced.
- the support glass substrate for semiconductor of the present invention preferably has a roughened region formed by a chemical solution. That is, it is preferable that the roughened region is formed by chemical treatment. In this way, a smooth roughened region can be formed. As a result, even when the roughened region is formed, it is easy to maintain the strength of the supporting glass substrate.
- a chemical solution an acidic aqueous solution is preferable from the viewpoint of roughening efficiency, and as the acid, for example, hydrofluoric acid, buffered hydrofluoric acid (BHF), hydrochloric acid, nitric acid, and sulfuric acid are preferable.
- the roughening treatment it is preferable to perform a chemical treatment after polishing the surface of the supporting glass substrate. That is, after increasing the surface roughness of the surface of the supporting glass substrate by polishing treatment, it is preferable to reduce microcracks existing in the polishing surface by chemical treatment. If it does in this way, processing time of roughening processing can be shortened, maintaining intensity.
- an alkaline aqueous solution can be used as the chemical solution, and for example, a potassium hydroxide aqueous solution and a sodium hydroxide aqueous solution can be used.
- Various methods can be used as a method for treating a chemical solution.
- a method of applying a chemical solution to a glass surface using a roller impregnated with a chemical solution A method of immersing a glass substrate in a chemical solution after partially protecting with a resist film is preferable.
- region is formed with the reactive gas in the support glass substrate for semiconductors of this invention. That is, it is also preferable that the roughened region is formed by the reactive gas. In this way, it is possible to safely perform the roughening treatment by controlling the flow of the reactive gas without scattering the chemical solution.
- gases can be used as the reactive gas. Among them, a gas containing F such as CF 4 or SF 6 or a gas containing Cl such as SiCl 4 is used as a source to react by an atmospheric pressure plasma process. It is preferable to generate a property gas. Furthermore, in the atmospheric pressure plasma process, it is preferable to spray an inert carrier gas such as He or Ar on the glass surface in addition to the reactive gas.
- the roughened region is formed by polishing treatment. That is, it is also preferable that the roughened region is formed by polishing treatment. In particular, it is preferable to form a roughened region on both the first surface and the second surface by arc-shaped polishing scratches. In this way, it is possible to safely perform the roughening process while reducing the overall plate thickness deviation.
- the roughened region is formed on the second surface. If it does in this way, even if contact peeling with a support glass substrate and a surface plate is repeated, the charge amount in a support glass substrate can be reduced. Note that when the roughened region is formed on the first surface, it becomes easy to reduce the charge amount in the supporting glass substrate when the semiconductor substrate is peeled off, but the roughened region is not formed on the first surface. Also good. When the roughened region is not formed on the first surface, the semiconductor substrate can be stably supported.
- the roughened region is formed in an area ratio of 5% or more, 10% or more, 30% or more, 50% or more, 80% or more, particularly on the entire surface. It is preferable. If it does in this way, when making it contact with a surface plate, it will become easy to reduce the charge amount in a support glass substrate.
- the roughened region is formed in an area ratio of 5% or more, 10% or more, 30% or more, 50% or more, particularly 80% or more of the first surface. If it does in this way, when peeling a semiconductor substrate, it will become easy to reduce the charge amount in a support glass substrate.
- the average thermal expansion coefficient in the temperature range of 30 to 260 ° C. is preferably increased when the ratio of the semiconductor chip is small in the semiconductor substrate and the ratio of the sealing material is large, and conversely, the semiconductor chip is increased in the semiconductor substrate.
- the ratio is large and the ratio of the sealing material is small, it is preferable to reduce the ratio.
- the supporting glass substrate has a glass composition in mass%, SiO 2 2 55-75%, Al 2 O 3 15-30%, Li 2 O 0.1-6%, Na 2 O + K 2 O 0-8%, MgO + CaO + SrO + BaO 0-10%, or SiO 2 It is also preferable to contain 55 to 75%, Al 2 O 3 10 to 30%, Li 2 O + Na 2 O + K 2 O 0 to 0.3%, MgO + CaO + SrO + BaO 5 to 20%.
- the supporting glass substrate has a glass composition in mass%, and SiO 2 2 55-75%, Al 2 O 3 3-15%, B 2 O 3 5-20%, MgO 0-5%, CaO 0-10%, SrO 0-5%, BaO 0-5%, ZnO 0 Preferably 5 to 15%, Na 2 O 5 to 15%, K 2 O 0 to 10%, SiO 2 64 to 71%, Al 2 O 3 5 to 10%, B 2 O 3 8 to 15% MgO 0-5%, CaO 0-6%, SrO 0-3%, BaO 0-3%, ZnO 0-3%, Na 2 O 5-15%, K 2 O 0-5% Is more preferable.
- the supporting glass substrate has a glass composition in mass%, SiO 2 2 60-75%, Al 2 O 3 5-15%, B 2 O 3 5-20%, MgO 0-5%, CaO 0-10%, SrO 0-5%, BaO 0-5%, ZnO 0
- the supporting glass substrate has a glass composition of mass%, SiO 2 2 55-70%, Al 2 O 3 3-13%, B 2 O 3 2-8%, MgO 0-5%, CaO 0-10%, SrO 0-5%, BaO 0-5%, ZnO 0 It is preferable to contain ⁇ 5%, Na 2 O 10 ⁇ 21%, K 2 O 0 ⁇ 5%.
- the supporting glass substrate has a glass composition of mass%, SiO 2 2 53-65%, Al 2 O 3 3-13%, B 2 O 3 0-5%, MgO 0.1-6%, CaO 0-10%, SrO 0-5%, BaO 0-5%, ZnO 0 ⁇ 5%, Na 2 O + K 2 O 20 ⁇ 40%, Na 2 O 12 ⁇ 21%, preferably contains K 2 O 7 ⁇ 21%.
- Na 2 O + K 2 O refers to the total amount of Na 2 O and K 2 O.
- MgO + CaO + SrO + BaO refers to the total amount of MgO, CaO, SrO and BaO.
- the content of the alkali component in the glass composition is preferably 15% by mass or less, 10% by mass or less, 5% by mass or less, and particularly less than 0.5% by mass.
- the content of the alkali component in the glass composition is smaller, static electricity is less likely to be released into the atmosphere, and the amount of charge in the support glass substrate is likely to increase, so the effect of the present invention is relatively increased.
- the higher the thermal expansion coefficient of the supporting glass substrate the larger the difference in thermal expansion coefficient between the supporting glass substrate and the surface plate, and the friction between the supporting glass substrate and the surface plate tends to increase due to the thermal process. Thereby, since the charge amount in the supporting glass substrate is likely to increase, the effect of the present invention becomes relatively large.
- the thermal expansion coefficient of the supporting glass substrate is high (for example, when the average thermal expansion coefficient at 20 to 260 ° C. of the supporting glass substrate is 50 ⁇ 10 ⁇ 7 / ° C. or more), from the viewpoint of reducing the charge amount, In addition to the roughening treatment, it is preferable to combine a static elimination treatment with an ionizer.
- the total thickness deviation is preferably 3.0 ⁇ m or less, less than 2.0 ⁇ m, 1.5 ⁇ m or less, 1.0 ⁇ m or less, particularly 0.1 to 1.0 ⁇ m or less.
- the smaller the overall plate thickness deviation the easier it is to improve the accuracy of the processing. In particular, since the wiring accuracy can be increased, high-density wiring is possible. Further, the strength of the supporting glass substrate is improved, and the supporting glass substrate and the laminated substrate are hardly damaged. Furthermore, the number of reuses of the supporting glass substrate can be increased.
- the support glass substrate for a semiconductor of the present invention may have a surface polished to reduce the overall thickness deviation to less than 2.0 ⁇ m, 1.5 ⁇ m or less, 1.0 ⁇ m or less, particularly less than 1.0 ⁇ m. preferable.
- Various methods can be adopted as the polishing method, but the glass substrate is polished while sandwiching both surfaces of the glass substrate with a pair of polishing pads and rotating the glass substrate and the pair of polishing pads together. Thus, a method of giving arc-shaped polishing scratches on both surfaces of the glass substrate is preferable.
- the pair of polishing pads have different outer diameters, and polishing is performed so that a part of the glass substrate protrudes from the polishing pad intermittently during polishing, and arc-shaped polishing is performed on both surfaces of the glass substrate. It is preferable to give a flaw. This makes it easy to reduce the overall plate thickness deviation and to reduce the amount of warpage.
- the polishing depth is not particularly limited, but the polishing depth is preferably 50 ⁇ m or less, 30 ⁇ m or less, 0.01 to 20 ⁇ m, particularly 0.1 to 10 ⁇ m. As the polishing depth is smaller, the productivity of the glass substrate is improved.
- the support glass substrate for semiconductor of the present invention may be rectangular, but is preferably in the form of a wafer (substantially perfect circle), and the diameter is preferably 100 mm or more and 500 mm or less, particularly 150 mm or more and 450 mm or less. In this way, it becomes easy to apply to the manufacturing process of a semiconductor package.
- the roundness of the supporting glass substrate (excluding the notch portion) is preferably 1 mm or less, 0.1 mm or less, 0.05 mm or less, particularly 0.03 mm or less. The smaller the roundness, the easier it is to apply to the semiconductor package manufacturing process.
- the definition of roundness is a value obtained by subtracting the minimum value from the maximum value of the outer shape of the support glass substrate.
- the plate thickness is preferably less than 2.0 mm, 1.5 mm or less, 1.2 mm or less, 1.1 mm or less, 1.0 mm or less, particularly 0.9 mm or less.
- the plate thickness decreases, the mass of the laminated substrate becomes lighter, so that the handling property is improved.
- the plate thickness is preferably 0.1 mm or more, 0.2 mm or more, 0.3 mm or more, 0.4 mm or more, 0.5 mm or more, 0.6 mm or more, particularly more than 0.7 mm.
- the amount of warp is preferably 60 ⁇ m or less, 55 ⁇ m or less, 50 ⁇ m or less, 1 to 45 ⁇ m, particularly 5 to 40 ⁇ m.
- the smaller the warp amount the easier it is to improve the accuracy of the processing. In particular, since the wiring accuracy can be increased, high-density wiring is possible.
- the support glass substrate for semiconductor of the present invention preferably has a notch (positioning portion) on a part of the outer periphery of the support glass substrate. If it does in this way, positioning members, such as a positioning pin, will contact a notch part of a support glass substrate, and it will become easy to fix a position of a support glass substrate. As a result, alignment of the semiconductor substrate and the supporting glass substrate is facilitated. In addition, if a notch part is formed also in a semiconductor substrate and a positioning member is contact
- positioning members such as a positioning pin
- This notch is preferably chamfered. That is, it is preferable that a chamfered portion is formed in the notch portion. Furthermore, it is preferable that the surface of the notch portion is etched with a chemical solution to remove microscopic scratches. Thereby, it becomes easy to prevent the support glass substrate from being damaged from the notch portion. Suitable chemical solutions are as described above.
- the end face (except for the notch portion) is preferably chamfered. That is, it is preferable that a chamfered portion is formed on the end surface. Furthermore, it is preferable that the surface of the end face is etched with an acid to remove microscopic scratches. Thereby, it becomes easy to prevent the support glass substrate from being damaged from the end face. Suitable chemical solutions are as described above.
- the support glass substrate for semiconductor of the present invention is preferably not subjected to chemical strengthening treatment from the viewpoint of reducing the amount of warpage. That is, from the viewpoint of reducing the amount of warpage, it is preferable not to have a compressive stress layer on the surface.
- the semiconductor supporting glass substrate of the present invention is preferably formed by a down draw method, particularly an overflow down draw method.
- molten glass overflows from both sides of a heat-resistant bowl-shaped structure, and the overflowed molten glass joins at the lower top end of the bowl-shaped structure and is formed downward to produce a glass substrate. It is a method to do.
- the surface to be the surface of the glass substrate is not in contact with the bowl-shaped refractory, and is formed in a free surface state.
- the structure and material of a bowl-shaped structure will not be specifically limited if a desired dimension and surface accuracy are realizable.
- the method of applying a force when performing downward stretch molding is not particularly limited. For example, a method of rotating and stretching a heat-resistant roll having a sufficiently large width in contact with the glass may be employed, or a plurality of pairs of heat-resistant rolls may be provided only in the vicinity of the end surface of the strip glass. You may employ
- the glass substrate forming method in addition to the overflow downdraw method, for example, a slot downdraw method, a redraw method, a float method, or the like can be adopted.
- the support glass substrate for semiconductor of the present invention is preferably formed by polishing the entire surface of the first surface and the second surface after being molded by the overflow downdraw method. In this way, it becomes easy to regulate the overall thickness deviation to less than 2.0 ⁇ m, 1.5 ⁇ m or less, 1.0 ⁇ m or less, and particularly 0.1 to 1.0 ⁇ m or less.
- the laminated substrate of the present invention is a laminated substrate comprising at least a semiconductor substrate and a semiconductor supporting glass substrate for supporting the semiconductor substrate, wherein the semiconductor supporting glass substrate is the above-mentioned semiconductor supporting glass substrate.
- the technical characteristics (preferable structure and effect) of the laminated substrate of the present invention overlap with the technical characteristics of the semiconductor supporting glass substrate of the present invention. Therefore, in the present specification, detailed description of the overlapping portions is omitted.
- the laminated substrate of the present invention includes a semiconductor chip in which an average thermal expansion coefficient at 20 to 260 ° C. of a supporting glass substrate for semiconductor is 50 ⁇ 10 ⁇ 7 / ° C. or more, and the semiconductor substrate is molded with at least a sealing material. It is preferable. If it does in this way, it will become easy to match
- the support glass substrate for semiconductor is alkali-free glass and the semiconductor substrate includes a silicon wafer. If it does in this way, it becomes easy to match
- the laminated substrate of the present invention preferably has an adhesive layer between the semiconductor substrate and the supporting glass substrate.
- the adhesive layer is preferably a resin, for example, a thermosetting resin, a photocurable resin (particularly an ultraviolet curable resin), or the like.
- a resin for example, a thermosetting resin, a photocurable resin (particularly an ultraviolet curable resin), or the like.
- what has the heat resistance which can endure the heat processing in the manufacturing process of a semiconductor package is preferable. Thereby, it becomes difficult to melt
- the laminated substrate of the present invention further has a peeling layer between the semiconductor substrate and the supporting glass substrate, more specifically, between the semiconductor substrate and the adhesive layer, or between the supporting glass substrate and the adhesive layer. It is preferable to have a layer. If it does in this way, it will become easy to peel a semiconductor substrate from a support glass substrate, after performing predetermined processing processing to a semiconductor substrate.
- the semiconductor substrate is preferably peeled off by irradiation light such as laser light from the viewpoint of productivity.
- the peeling layer is made of a material that causes “in-layer peeling” or “interfacial peeling” by irradiation light such as laser light. That is, when light of a certain intensity is irradiated, the bonding force between atoms or molecules in an atom or molecule disappears or decreases, and ablation or the like is caused to cause peeling.
- the component contained in the release layer is released as a gas due to irradiation of irradiation light, the separation layer is released, and when the release layer absorbs light and becomes a gas, and its vapor is released, resulting in separation There is.
- the supporting glass substrate is preferably larger than the semiconductor substrate.
- FIG. 1 is a conceptual perspective view showing an example of the laminated substrate 1 of the present invention.
- the laminated substrate 1 includes a semiconductor supporting glass substrate 10 and a semiconductor substrate 11.
- the semiconductor supporting glass substrate 10 is adhered to the semiconductor substrate 11 in order to prevent the dimensional change of the semiconductor substrate 11.
- a release layer 12 and an adhesive layer 13 are disposed between the semiconductor support glass substrate 10 and the semiconductor substrate 11.
- the release layer 12 is in contact with the support glass substrate for semiconductor 10, and the adhesive layer 13 is in contact with the semiconductor substrate 11.
- the laminated substrate 1 is laminated in the order of a supporting glass substrate for semiconductor 10, a release layer 12, an adhesive layer 13, and a semiconductor substrate 11.
- the shape of the support glass substrate for semiconductor 10 is determined according to the semiconductor substrate 11, but in FIG. 1, the shapes of the support glass substrate for semiconductor 10 and the semiconductor substrate 11 are both substantially disk shapes.
- the release layer 12 is made of silicon oxide, silicate compound, silicon nitride, aluminum nitride, titanium nitride, or the like.
- the release layer 12 is formed by plasma CVD, spin coating by a sol-gel method, or the like.
- the adhesive layer 13 is made of a resin, and is applied and formed by, for example, various printing methods, inkjet methods, spin coating methods, roll coating methods, and the like. After the semiconductor supporting glass substrate 10 is peeled from the semiconductor substrate 11 by the release layer 12, the adhesive layer 13 is dissolved and removed with a solvent or the like.
- FIG. 2 is a conceptual cross-sectional view showing a manufacturing process of a fan-out type WLP.
- FIG. 2A shows a state in which the adhesive layer 21 is formed on one surface of the support member 20. A peeling layer may be formed between the support member 20 and the adhesive layer 21 as necessary.
- FIG. 2B a plurality of semiconductor chips 22 are pasted on the adhesive layer 21. At that time, the surface on the active side of the semiconductor chip 22 is brought into contact with the adhesive layer 21.
- the semiconductor chip 22 is molded with a resin sealing material 23.
- the sealing material 23 is made of a material having little dimensional change after compression molding and little dimensional change when forming a wiring. Subsequently, as shown in FIGS.
- the semiconductor substrate 24 on which the semiconductor chip 22 is molded is separated from the support member 20, and then bonded and fixed to the semiconductor support glass substrate 26 through the adhesive layer 25.
- the surface of the semiconductor substrate 24 opposite to the surface on which the semiconductor chip 22 is embedded is arranged on the semiconductor supporting glass substrate 26 side.
- a roughened region is formed by an atmospheric pressure plasma process (source CF 4 , carrier gas Ar) on the surface opposite to the surface in contact with the adhesive layer 25 of the support glass substrate 26 for semiconductor. Yes.
- source CF 4 atmospheric pressure plasma process
- carrier gas Ar carrier gas
- FIG. 3 is a conceptual cross-sectional view showing a process of thinning a semiconductor substrate using a supporting glass substrate for semiconductor as a back grind substrate.
- FIG. 3A shows the laminated substrate 30.
- the laminated substrate 30 is laminated in the order of a support glass substrate 31 for a semiconductor, a release layer 32, an adhesive layer 33, and a semiconductor substrate (silicon wafer) 34.
- a roughened region is formed on the surface opposite to the surface in contact with the adhesive layer 34 of the support glass substrate 31 for semiconductor by chemical treatment using an acid aqueous solution.
- a plurality of semiconductor chips 35 are formed on the surface of the semiconductor substrate 34 on the side in contact with the adhesive layer 33 by a photolithography method or the like.
- FIG. 3A shows the laminated substrate 30.
- the laminated substrate 30 is laminated in the order of a support glass substrate 31 for a semiconductor, a release layer 32, an adhesive layer 33, and a semiconductor substrate (silicon wafer) 34.
- a roughened region is formed on
- FIG. 3B shows a process of thinning the semiconductor substrate 34 with the polishing apparatus 36.
- the semiconductor substrate 34 is mechanically polished to be thinned to, for example, several tens of ⁇ m.
- FIG. 3C shows a step of irradiating the release layer 32 with ultraviolet light 37 through the support glass substrate 31 for semiconductor. Through this step, the semiconductor supporting glass substrate 31 can be separated as shown in FIG. 3D. The separated support glass substrate 31 for semiconductor is reused as necessary.
- FIG. 3E shows a step of removing the adhesive layer 33 from the semiconductor substrate 34. Through this step, the thinned semiconductor substrate 34 can be collected.
- Table 1 shows examples (samples Nos. 1 to 4) and comparative examples (samples Nos. 5 and 6) of the present invention.
- a glass batch in which glass raw materials were prepared so as to have the glass composition shown in the table was placed in a platinum crucible, and then melted, clarified and homogenized at 1500 to 1600 ° C. for 24 hours. In melting the glass batch, the mixture was stirred and homogenized using a platinum stirrer. Next, the molten glass was poured onto a carbon plate and formed into a plate shape, and then slowly cooled at a temperature near the annealing point for 30 minutes.
- the obtained glass substrate was cut into a thickness of 300 mm ⁇ 300 mm ⁇ 0.8 mm, and then both surfaces thereof were polished by a polishing apparatus. Specifically, both surfaces of the glass substrate are sandwiched between a pair of polishing pads having different outer diameters, and both the surfaces of the glass substrate are polished while rotating the glass substrate and the pair of polishing pads together. Arc-shaped polishing scratches were given to the surface. During the polishing process, control was sometimes performed so that a part of the glass substrate protruded from the polishing pad.
- the polishing pad was made of urethane, the average particle size of the polishing slurry used in the polishing treatment was 2.5 ⁇ m, and the polishing rate was 15 m / min.
- the surface of the glass substrate was treated with a chemical solution by dipping in a 10% by mass HCl aqueous solution at 50 ° C. for 1 hour.
- the glass substrate after chemical treatment was washed with water, the polyimide tape was peeled off, washed again with water and dried.
- a glass batch in which glass raw materials were prepared so as to have the glass composition shown in the table was placed in a platinum crucible, and then melted, clarified and homogenized at 1500 to 1600 ° C. for 24 hours. In melting the glass batch, the mixture was stirred and homogenized using a platinum stirrer. Next, the molten glass was poured onto a carbon plate and formed into a plate shape, and then slowly cooled at a temperature near the annealing point for 30 minutes.
- the obtained glass substrate was cut into a thickness of ⁇ 300 mm ⁇ 0.8 mm, and then both surfaces thereof were mirror-polished. Next, it was immersed in a 5 mass% potassium hydroxide aqueous solution at 50 ° C. for 1 hour, and both surfaces of the glass substrate were treated with a chemical solution. Next, after the chemical treatment, the glass substrate was washed with water and dried.
- the obtained glass substrate was cut into a thickness of ⁇ 300 mm ⁇ 0.7 mm, and both surfaces thereof were polished by a polishing apparatus. Specifically, both surfaces of the glass substrate are sandwiched between a pair of polishing pads having different outer diameters, and both the surfaces of the glass substrate are polished while rotating the glass substrate and the pair of polishing pads together. Arc-shaped polishing scratches were given to the surface. During the polishing process, control was sometimes performed so that a part of the glass substrate protruded from the polishing pad.
- the polishing pad was made of urethane, the average particle size of the polishing slurry used in the polishing treatment was 2.5 ⁇ m, and the polishing rate was 15 m / min.
- a glass batch in which glass raw materials were prepared so as to have the glass composition shown in the table was placed in a platinum crucible, and then melted, clarified and homogenized at 1500 to 1600 ° C. for 24 hours. In melting the glass batch, the mixture was stirred and homogenized using a platinum stirrer. Next, the molten glass was poured onto a carbon plate and formed into a plate shape, and then slowly cooled at a temperature near the annealing point for 30 minutes.
- the obtained glass substrate was cut into a thickness of 300 mm ⁇ 400 mm ⁇ 1.0 mm, and then both surfaces thereof were mirror-polished. Further, after masking in a stripe shape with a polyimide tape on the glass substrate after mirror polishing, an atmospheric pressure plasma treatment using CF 4 as a reactive gas and Ar as a carrier gas was performed. Next, after performing atmospheric pressure plasma treatment, the glass substrate was washed with water, the polyimide tape was peeled off, washed again with water, and dried.
- a glass batch in which glass raw materials were prepared so as to have the glass composition shown in the table was put into a continuous melting furnace, and then melted, clarified and homogenized at 1500 to 1600 ° C. for 24 hours. Subsequently, it shape
- a glass batch in which glass raw materials were prepared so as to have the glass composition shown in the table was put into a continuous melting furnace, and then melted, clarified and homogenized at 1500 to 1600 ° C. for 24 hours. Subsequently, it shape
- Each glass substrate obtained was evaluated with respect to an average thermal expansion coefficient ⁇ 30 to 380 in a temperature range of 30 to 380 ° C., an area of a roughened region, a surface roughness Ra, a surface roughness Rmax, a charge amount and a microcrack. .
- the results are shown in Table 1.
- the average coefficient of thermal expansion ⁇ 30 to 380 in the temperature range of 30 to 380 ° C. is a value measured with a dilatometer.
- the surface roughness Ra, Rmax was measured in a 5 ⁇ m square area using a scanning probe microscope (Dimension Icon made by Bruker). Specifically, the surface roughness Ra, Rmax was measured at an area of 5 ⁇ m square at 9 locations of the in-plane central portion and the peripheral portion (the portion about 50 mm inward from the end surface of the glass substrate), and the average was obtained. It is a value. Sample No. About samples other than 5, surface roughness Ra and Rmax were measured about the roughening area
- This apparatus has the following configuration.
- the support base 41 of the glass substrate 40 includes a pad 42 made of Teflon (registered trademark) that supports the corners of the glass substrate 4. Further, the support base 41 is provided with a metal aluminum plate 43 that can be moved up and down. By moving the plate 43 up and down, the glass substrate 40 and the plate 43 are brought into contact with each other and peeled to charge the glass substrate 40. Can do.
- the plate 43 is grounded. Further, a hole (not shown) is formed in the plate 43, and this hole is connected to a diaphragm type vacuum pump (not shown). When the vacuum pump is driven, air is sucked from the holes of the plate 43, whereby the glass substrate 40 can be vacuum-adsorbed to the plate 43.
- a surface potential meter 44 is installed at a position 10 mm above the glass substrate 40, whereby the amount of charge generated at the center of the glass substrate 40 can be continuously measured.
- an air gun 45 with an ionizer is installed above the glass substrate 40, whereby the charging of the glass substrate 40 can be gradually reduced.
- the size of the plate 43 of this apparatus is a circle of ⁇ 150 mm.
- the experiment is performed in an environment of 20 ° C. ⁇ 1 ° C. and humidity 40% ⁇ 1%.
- This amount of charge changes greatly under the influence of the atmosphere and humidity in the atmosphere, so it is particularly necessary to pay attention to humidity management.
- the glass substrate 40 is placed on the support base 41 with the surface having the roughened region facing down. In addition, when there is no roughening area
- the glass substrate 40 is discharged to 10 V or less by the air gun 45 with an ionizer.
- the plate 43 is raised and brought into contact with the glass substrate 40 and is vacuum-adsorbed to bring the plate 43 and the glass substrate 40 into close contact with each other for 30 seconds.
- the glass substrate 40 is peeled by lowering the plate 43, and the amount of charge generated at the center of the glass substrate 40 is continuously measured with a surface potentiometer. (5) Repeat (3) and (4), and continuously evaluate the charge amount five times. (6) The maximum charge amount in each measurement is obtained, and these are integrated to obtain the charge amount.
- microcrack is evaluated by observing the inside of the glass substrate as “ ⁇ ” when there is almost no microcrack and “x” when there are many microcracks.
- sample No. 1 to 4 since the surface roughness of the roughened region was appropriate, the evaluation of charge amount and microcrack was good. Therefore, sample no. It is considered that 1 to 4 can be suitably used as a supporting glass substrate for a semiconductor.
- sample No. No. 5 had a large charge amount because the surface was too smooth. Sample No. Since the surface of 6 was too rough, the evaluation of microcracks was poor.
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Abstract
Description
まず表中のガラス組成になるように、ガラス原料を調合したガラスバッチを白金坩堝に入れた後、1500~1600℃で24時間溶融、清澄、均質化を行った。ガラスバッチの溶解に際しては、白金スターラーを用いて攪拌し、均質化を行った。次いで、溶融ガラスをカーボン板上に流し出して、板状に成形した後、徐冷点付近の温度で30分間徐冷した。
まず表中のガラス組成になるように、ガラス原料を調合したガラスバッチを白金坩堝に入れた後、1500~1600℃で24時間溶融、清澄、均質化を行った。ガラスバッチの溶解に際しては、白金スターラーを用いて攪拌し、均質化を行った。次いで、溶融ガラスをカーボン板上に流し出して、板状に成形した後、徐冷点付近の温度で30分間徐冷した。
まず表中のガラス組成になるように、ガラス原料を調合したガラスバッチを連続溶融炉に投入した後、1500~1600℃で24時間溶融、清澄、均質化を行った。次いで、オーバーフローダウンドロー法でガラス基板に成形した。
まず表中のガラス組成になるように、ガラス原料を調合したガラスバッチを白金坩堝に入れた後、1500~1600℃で24時間溶融、清澄、均質化を行った。ガラスバッチの溶解に際しては、白金スターラーを用いて攪拌し、均質化を行った。次いで、溶融ガラスをカーボン板上に流し出して、板状に成形した後、徐冷点付近の温度で30分間徐冷した。
まず表中のガラス組成になるように、ガラス原料を調合したガラスバッチを連続溶融炉に投入した後、1500~1600℃で24時間溶融、清澄、均質化を行った。次いで、オーバーフローダウンドロー法でガラス基板に成形した。続いて、得られたガラス基板をφ300mm×0.7mm厚に切断加工した。
まず表中のガラス組成になるように、ガラス原料を調合したガラスバッチを連続溶融炉に投入した後、1500~1600℃で24時間溶融、清澄、均質化を行った。次いで、ロールアウト法でガラス基板に成形した。続いて、得られたガラス基板をφ300mm×0.7mm厚に切断加工した後、その両表面を研磨装置により研磨処理した。
(1) ガラス基板40の粗面化領域を有する表面を下側にして支持台41に載置する。なお、両表面に粗面化領域を有しない場合は、どちらの表面が下側でもよい。
(2) イオナイザ付きエアーガン45により、ガラス基板40を10V以下に除電する。
(3) プレート43を上昇させてガラス基板40に接触させるとともに真空吸着させて、プレート43とガラス基板40を30秒間密着させる。
(4) プレート43を下降させることでガラス基板40を剥離し、ガラス基板40中央部に発生する帯電量を表面電位計で連続的に測定する。
(5) (3)と(4)を繰り返し、計5回の帯電量の評価を連続して行う。
(6) 各測定における最大帯電量を求め、これらを積算して帯電量とする。
10、26、31、40 半導体用支持ガラス基板(ガラス基板)
11、24、34 半導体基板
12、32 剥離層
13、21、25、33 接着層
20 支持部材
22、35 半導体チップ
23 封止材
28 配線
29 半田バンプ
36 研磨装置
37 紫外光
41 支持台
42 パッド
43 プレート
44 表面電位計
45 エアーガン
Claims (10)
- 半導体基板を積層させる側となる第一の表面と第一の表面とは反対側の表面である第二の表面とを有し、第一の表面及び第二の表面の少なくとも一方に、表面粗さRaが0.3nm以上、且つ表面粗さRmaxが100nm以下となる粗面化領域を有することを特徴とする半導体用支持ガラス基板。
- 粗面化領域が、第二の表面に形成されていることを特徴とする請求項1に記載の半導体用支持ガラス基板。
- 粗面化領域が、面積比で、第二の表面の5%以上に形成されていることを特徴とする請求項2に記載の半導体用支持ガラス基板。
- 粗面化領域が、第一の表面と第二の表面の両方に形成されていることを特徴とする請求項1~3の何れかに記載の半導体用支持ガラス基板。
- 粗面化領域内に、円弧状の研磨傷が存在することを特徴とする請求項1~4の何れかに記載の半導体用支持ガラス基板。
- 全体板厚偏差が3.0μm以下であることを特徴とする請求項1~5の何れかに記載の半導体用支持ガラス基板。
- 板厚が2.0mm未満であり、且つ反り量が60μm以下であることを特徴とする請求項1~6の何れかに記載の半導体用支持ガラス基板。
- 少なくとも半導体基板と半導体基板を支持するための半導体用支持ガラス基板とを備える積層基板であって、半導体用支持ガラス基板が請求項1~7の何れかに記載の半導体用支持ガラス基板であることを特徴とする積層基板。
- 半導体用支持ガラス基板の20~260℃における平均熱膨張係数が50×10-7/℃以上であり、且つ半導体基板が少なくとも封止材でモールドされた半導体チップを備えることを特徴とする請求項8に記載の積層基板。
- 半導体用支持ガラス基板が無アルカリガラスであり、且つ半導体基板がシリコンウェハを備えることを特徴とする請求項8に記載の積層基板。
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CN107108344A (zh) | 2017-08-29 |
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