WO2016115777A1 - Oled的封装方法及oled封装结构 - Google Patents

Oled的封装方法及oled封装结构 Download PDF

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Publication number
WO2016115777A1
WO2016115777A1 PCT/CN2015/075684 CN2015075684W WO2016115777A1 WO 2016115777 A1 WO2016115777 A1 WO 2016115777A1 CN 2015075684 W CN2015075684 W CN 2015075684W WO 2016115777 A1 WO2016115777 A1 WO 2016115777A1
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package
tft substrate
oled
layer
packaging
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PCT/CN2015/075684
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English (en)
French (fr)
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刘亚伟
李文辉
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深圳市华星光电技术有限公司
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Priority to US14/758,562 priority Critical patent/US20160343979A1/en
Publication of WO2016115777A1 publication Critical patent/WO2016115777A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an OLED packaging method and an OLED package structure.
  • OLED is an Organic Light-Emitting Diode, which has the characteristics of self-illumination, high brightness, wide viewing angle, high contrast, flexibility, low energy consumption, etc., and has received extensive attention as a new generation display mode. It has gradually replaced traditional LCD monitors and is widely used in mobile phone screens, computer monitors, and full-color TVs. OLED display technology is different from traditional liquid crystal display technology. It does not require a backlight. It uses a very thin coating of organic materials and a glass substrate. When there is current, these organic materials will emit light. However, since organic materials are easily reacted with water vapor or oxygen, as an organic material-based display device, the OLED display has a very high requirement for packaging.
  • the OLED package mainly includes the following methods: desiccant package, UV glue package (also known as Dam only package), UV glue and filler package (also known as Dam&Fill package), glass glue package (also known as Frit package).
  • UV glue package also known as Dam only package
  • UV glue and filler package also known as Dam&Fill package
  • glass glue package also known as Frit package.
  • UV plastic packaging technology is the earliest and most OLED package Commonly used technology, which has the following characteristics: no solvent or a small amount of solvent is used to reduce the environmental pollution of the solvent; low energy consumption, low temperature curing, suitable for UV sensitive materials; fast curing speed, high efficiency, It is used on high-speed production lines, and the curing equipment covers a small area.
  • the sealant used in the UV adhesive package is an organic material, which has a large molecular gap after curing, and adopts a conventional OLED packaging method because the sealant has curing defects, porosity, and weak adhesion to the substrate and the package cover. For other reasons, water vapor and oxygen are more likely to penetrate into the inner sealing region through the gap, resulting in faster degradation of the performance of the OLED device and shortened life.
  • the internal sealing of the OLED device is ensured, and the contact between the OLED device and the external environment in oxygen and water vapor is minimized, which is essential for the stable performance of the OLED device and prolonging the service life of the OLED.
  • the object of the present invention is to provide a method for packaging an OLED, which can significantly improve the adhesion between the package cover and the TFT substrate, improve the sealing property, effectively reduce the oxygen and water vapor permeating into the OLED, thereby improving the performance of the OLED device. To extend the life of OLED devices.
  • An object of the present invention is to provide an OLED package structure, which is prepared by forming a rough surface of the TFT substrate on the upper surface of the package region, thereby increasing the contact area between the sealant and the surface of the TFT substrate, and significantly improving the package cover.
  • the adhesion between the board and the TFT substrate is improved Sealing, and sealing and protecting the OLED device with a sealing film, effectively reducing oxygen and moisture permeating into the OLED, thereby improving the performance of the OLED device and prolonging the service life of the OLED device.
  • the present invention provides a method for packaging an OLED, comprising the following steps:
  • Step 1 Providing a TFT substrate
  • the TFT substrate includes a display area and a package area located at a periphery of the display area, and the structure of the TFT substrate in the package area includes a substrate, a metal layer formed on the substrate, and a cover layer formed on the metal layer a gate insulating layer of the metal layer and the substrate, an etch stop layer formed on the gate insulating layer, and a passivation protective layer formed on the etch stop layer;
  • Step 2 the TFT substrate is located on the upper surface of the package area to prepare a rough surface
  • Step 3 fabricating an OLED device on the display area of the TFT substrate
  • Step 4 providing a package cover, and coating a surface of the package surface of the TFT substrate with a sealant on the package cover;
  • Step 5 attaching a sealing film to the inner region of the package cover on the package cover;
  • Step 6 The TFT substrate and the package cover are relatively attached
  • Step 7 irradiating with ultraviolet light to cure the sealant, thereby completing packaging of the package cover to the TFT substrate.
  • the specific implementation of the step 2 is: applying a photoresist layer on the surface of the passivation protective layer on the package region, and forming a plurality of spaced through holes on the photoresist layer through the mask exposure and development process.
  • the thickness of the photoresist layer and the depth of the through hole are 0 to 50 ⁇ m.
  • the specific implementation of the step 2 is: applying a photoresist layer on the surface of the passivation protective layer on the package region, and exposing, developing, etching, and removing the photoresist through the photomask to the passivation protective layer.
  • a plurality of spaced-apart grooves are formed on the etch stop layer, the grooves penetrating the passivation protective layer but not penetrating the etch stop layer.
  • the groove has a depth of 0 to 50 ⁇ m.
  • a specific embodiment of the step 2 is: forming an inorganic layer having a rough surface on the passivation protective layer by chemical vapor deposition.
  • the material of the inorganic layer is silicon nitride or silicon dioxide.
  • the thickness of the sealing film in the step 5 is 0 to 100 um.
  • the thickness of the sealing film in the step 5 was 20 ⁇ m.
  • the invention also provides a method for packaging an OLED, comprising the following steps:
  • Step 1 Providing a TFT substrate
  • the TFT substrate includes a display area and a package area located at a periphery of the display area, and the structure of the TFT substrate in the package area includes a substrate, a metal layer formed on the substrate, and a cover layer formed on the metal layer a gate insulating layer of the metal layer and the substrate, an etch stop layer formed on the gate insulating layer, and a passivation protective layer formed on the etch stop layer;
  • Step 2 the TFT substrate is located on the upper surface of the package area to prepare a rough surface
  • Step 3 fabricating an OLED device on the display area of the TFT substrate
  • Step 4 providing a package cover, and coating a surface of the package surface of the TFT substrate with a sealant on the package cover;
  • Step 5 attaching a sealing film to the inner region of the package cover on the package cover;
  • Step 6 The TFT substrate and the package cover are relatively attached
  • Step 7 irradiating with ultraviolet light to cure the sealant, thereby completing packaging of the package cover to the TFT substrate;
  • the specific implementation manner of the step 2 is: applying a photoresist layer on the surface of the passivation protective layer on the package area, forming a plurality of photoresist layers on the photoresist layer through the mask exposure and development process. Perforated through holes;
  • the thickness of the sealing film in the step 5 is 0 to 100 um.
  • the present invention also provides an OLED package structure, comprising a TFT substrate, a package cover plate corresponding to the TFT substrate, an OLED device on the display area in the middle of the TFT substrate, a package area and a package cover on the edge of the TFT substrate a sealant between the corresponding regions of the board, and a sealing film covering the OLED device and completely filling an inner space surrounded by the sealant between the TFT substrate and the package cover, wherein the edge of the TFT substrate
  • the upper surface of the package area is a rough surface that is uneven.
  • the OLED packaging method and OLED package structure provided by the present invention increase the contact area between the sealant and the TFT substrate by preparing the upper surface of the package region of the TFT substrate into a rough surface which is uneven
  • the adhesion between the package cover and the TFT substrate is enhanced, and a sealing film covering the OLED device and filling the internal space enclosed by the sealant is disposed inside the OLED package structure, thereby improving the sealing property of the OLED package structure.
  • the oxygen and water vapor which penetrate into the OLED are effectively reduced, the performance of the OLED device is improved, and the service life of the OLED device is prolonged.
  • FIG. 1 is a flow chart of a method of packaging an OLED of the present invention
  • FIG. 2 is a schematic cross-sectional view of a TFT substrate provided in step 1 of the packaging method of the OLED of the present invention
  • FIG. 3 is a schematic diagram of Embodiment 1 of Step 2 of a method for packaging an OLED according to the present invention
  • FIG. 4 is a schematic diagram of an etching process of Embodiment 2 of the packaging method of the OLED of the present invention.
  • FIG. 5 is a schematic diagram of a photoresist removal process according to Embodiment 2 of the method for packaging an OLED according to the present invention
  • FIG. 6 is a schematic diagram of Embodiment 3 of Step 2 of the packaging method of the OLED according to the present invention.
  • step 3 of a method for packaging an OLED according to the present invention is a schematic diagram of step 3 of a method for packaging an OLED according to the present invention.
  • step 4 of a method for packaging an OLED according to the present invention is a schematic diagram of step 4 of a method for packaging an OLED according to the present invention.
  • step 5 is a schematic diagram of step 5 of a method for packaging an OLED according to the present invention.
  • step 6 is a schematic diagram of step 6 of a method for packaging an OLED according to the present invention.
  • step 7 is a schematic diagram of step 7 of a method of packaging an OLED of the present invention.
  • the present invention provides a method for packaging an OLED, including the following steps:
  • Step 1 As shown in FIG. 2, a TFT substrate 1 is provided.
  • the TFT substrate 1 includes a display area 91 and a package area 92 located at the periphery of the display area 91.
  • the structure of the TFT substrate 1 in the package area 92 includes a substrate 11 and a metal formed on the substrate 11. a layer 12, a gate insulating layer 13 formed on the metal layer 12 covering the metal layer 12 and the substrate 11, an etch barrier layer 14 formed on the gate insulating layer 13, and formed on the gate layer
  • the passivation protective layer 15 on the barrier layer 14 is etched.
  • Step 2 The TFT substrate 1 is placed on the upper surface of the package region 92 to prepare a rough surface having irregularities.
  • step 2 can be implemented by the following three implementation manners:
  • Embodiment 1 is a diagrammatic representation of Embodiment 1:
  • a photoresist layer 16 is coated on the surface of the passivation protective layer 15 on the package region 92, and a plurality of spaced through holes are formed on the photoresist layer 16 by a mask exposure and development process. 161, thereby making the surface of the photoresist layer 16 rough and uneven, in the subsequent packaging process, the contact area between the sealant 4 and the surface of the TFT substrate 1 can be increased, and finally between the package cover 2 and the TFT substrate 1 is improved.
  • the thickness of the photoresist layer 16, that is, the depth of the through hole 161 is 0 to 50 ⁇ m.
  • Embodiment 2 is a diagrammatic representation of Embodiment 1:
  • a photoresist layer 16 is coated on the surface of the passivation protective layer 15 on the package region 92, and the passivation protective layer is exposed, developed, etched, and photoresisted through the mask.
  • Forming a plurality of spaced-apart grooves 151 on the etch stop layer 14 the grooves 151 penetrating the passivation protective layer 15 but not penetrating the etch stop layer 14 to thereby passivate the passivation layer
  • the protective layer 15 and the etch stop layer 14 are formed with a concave-convex surface. During the subsequent packaging process, the contact area between the sealant 4 and the surface of the TFT substrate 1 can be increased, and finally the bond between the package cover 2 and the TFT substrate 1 can be improved. force;
  • the groove 151 has a depth of 0 to 50 ⁇ m.
  • Embodiment 3 is a diagrammatic representation of Embodiment 3
  • a chemically vapor deposited (CVD) technique is used to form a rough inorganic layer 17 on the surface of the passivation protective layer 15 on the package region 92 by controlling parameters such as temperature and voltage of the chemical vapor deposition. Therefore, the surface of the package region of the TFT substrate 1 becomes uneven, and the contact surface of the sealant 4 and the surface of the TFT substrate 1 can be increased during the subsequent packaging process. Accumulating, finally improving the adhesion between the package cover 2 and the TFT substrate 1;
  • the material of the inorganic layer 17 is silicon nitride (SiNx) or silicon dioxide (SiO 2 ).
  • Step 3 As shown in FIG. 7, an OLED device 3 is formed on the display region 91 of the TFT substrate 1.
  • Step 4 Providing a package cover 2, as shown in FIG. 8, a sealant 4 is coated on the surface of the package cover 2 of the TFT substrate 1 on the package cover 2.
  • Step 5 As shown in FIG. 9, a sealing film 5 is attached to the inner region of the package cover 2 on the package cover 2.
  • the sealing film 5 can absorb moisture that intrudes into the interior of the sealant 4, prolonging the life of the OLED.
  • the thickness of the sealing film 5 is 0 to 100 ⁇ m. Preferably, the thickness of the sealing film 5 is 20 ⁇ m.
  • Step 6 As shown in FIG. 10, the TFT substrate 1 and the package cover 2 are bonded to each other.
  • the sealing film 5 completely covers the OLED device 3, and the sealing film 5 completely fills the TFT substrate 1 and the package cover 2 An internal space surrounded by the sealant 4 is used to effectively improve the sealing of the OLED.
  • Step 7 as shown in FIG. 11, irradiating with ultraviolet light to cure the sealant 4 from The encapsulation of the TFT substrate 1 by the package cover 2 is completed.
  • the present invention further provides an OLED package structure including a TFT substrate 1 and a package cover 2 corresponding to the TFT substrate 1 , which is located on the display area 91 in the middle of the TFT substrate 1 .
  • OLED device 3 a sealant 4 between the package region 92 at the edge of the TFT substrate 1 and a corresponding region of the package cover 2, and covering the OLED device and completely filling the TFT substrate 1 and the package cover 2
  • the structure of the TFT substrate 1 in the package region 92 may include: a substrate 11 , a metal layer 12 formed on the substrate 11 , and a metal layer 12 formed on the metal layer 12 to cover the metal layer a gate insulating layer 13 with the substrate 11, an etch stop layer 14 formed on the gate insulating layer 13, a passivation protective layer 15 formed on the etch stop layer 14, and a passivation layer a photoresist layer 16 on the surface of the protective layer 15 , wherein the photoresist layer 16 has a plurality of spaced-apart vias 161 , specifically, the thickness of the photoresist layer 16 , that is, the depth of the via 161 It is 0 to 50 ⁇ m.
  • the structure of the TFT substrate 1 in the package region 92 may further include: a substrate 11 , a metal layer 12 formed on the substrate 11 , and a metal layer 12 .
  • a gate insulating layer 13 covering the metal layer 12 and the substrate 11, an etch barrier layer 14 formed on the gate insulating layer 13, and a passivation protective layer formed on the etch barrier layer 14 15 , wherein the passivation protective layer 15 and the etch stop layer 14 are formed with a plurality of spaced-apart grooves 151 penetrating the passivation protective layer 15 but not penetrating the etching
  • the barrier layer 14, specifically, the groove 151 has a depth of 0 to 50 ⁇ m.
  • the structure of the TFT substrate 1 in the package region 92 may further include: a substrate 11 , a metal layer 12 formed on the substrate 11 , and a metal layer 12 formed on the metal layer 12 to cover the a gate insulating layer 13 of the metal layer 12 and the substrate 11, an etch stop layer 14 formed on the gate insulating layer 13, a passivation protective layer 15 formed on the etch stop layer 14, and a passivation layer 15 formed on the etch stop layer 14
  • the thickness of the sealing film 5 is 0 to 100 ⁇ m, and preferably, the thickness of the sealing film 5 is 20 ⁇ m.
  • the OLED packaging method and the OLED package structure provided by the present invention increase the contact area between the sealant and the TFT substrate by preparing the upper surface of the package region of the TFT substrate into a rough surface.
  • the adhesion between the package cover and the TFT substrate is enhanced, and the OLED device is covered inside the OLED package structure and filled with the interior enclosed by the sealant.
  • the space sealing film improves the sealing performance of the OLED package structure, effectively reduces the oxygen and water vapor permeating into the OLED, improves the performance of the OLED device, and prolongs the service life of the OLED device.

Abstract

一种OLED的封装方法及OLED封装结构，通过将TFT基板（1）的封装区域（92）的上表面制备成凹凸不平的粗糙表面，增大了框胶（4）与TFT基板（1）的接触面积，增强了封装盖板（2）与TFT基板（1）之间的粘结力，并在OLED封装结构内部设置覆盖OLED器件（3）并填充由框胶（4）所围成的内部空间的密封薄膜（5），提高了OLED封装结构的密封性，有效减少了渗透到OLED内部的氧气以及水汽，提高了OLED器件的性能，延长了OLED器件的使用寿命。

Description

OLED的封装方法及OLED封装结构 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED的封装方法及OLED封装结构。
背景技术
OLED即有机发光二极管(Organic Light-Emitting Diode)，具备自发光、高亮度、宽视角、高对比度、可挠曲、低能耗等特性，因此受到广泛的关注，并作为新一代的显示方式，已开始逐渐取代传统液晶显示器，被广泛应用在手机屏幕、电脑显示器、全彩电视等。OLED显示技术与传统的液晶显示技术不同，无需背光灯，采用非常薄的有机材料涂层和玻璃基板，当有电流通过时，这些有机材料就会发光。但是由于有机材料易与水汽或氧气反应，作为基于有机材料的显示设备，OLED显示屏对封装的要求非常高。
OLED封装主要包括以下几种方式：干燥剂封装、UV胶封装(又称Dam only封装)、UV胶和填充胶封装(又称Dam&Fill封装)、玻璃胶封装(又称Frit封装)等。其中，UV胶封装技术是OLED封装最早也是最 常用的技术，其具有如下特点：不使用溶剂或使用少量溶剂，减少了溶剂对环境的污染；耗能少，可低温固化，适用于对UV敏感的材料；固化速度快，效率高，可在高速生产线上使用，固化设备占地面积小等。但是，UV胶封装中所使用的密封胶是有机材料，其固化后分子间隙较大，采用传统的OLED封装方法，由于密封胶具有固化缺陷、多孔性、与基板、封装盖板的结合力弱等原因，水汽与氧气比较容易透过间隙渗透入内部密封区域，从而导致OLED器件的性能较快退化，寿命缩短。
因此，通过对OLED进行有效封装，保证OLED器件内部良好的密封性，尽可能的减少OLED器件与外部环境中氧气、水汽的接触，对于OLED器件的性能稳定及延长OLED的使用寿命至关重要。
发明内容
本发明的目的在于提供一种OLED的封装方法，能够显著提高封装盖板与TFT基板之间的粘结力，提高密封性，有效减少渗透到OLED内部的氧气与水汽，从而提高OLED器件的性能，延长OLED器件的使用寿命。
本发明的目的还在于提供一种OLED封装结构，通过将所述TFT基板位于封装区域的上表面制备成凹凸不平的粗糙表面，从而增大框胶与TFT基板表面的接触面积，显著提高封装盖板与TFT基板之间的粘结力，提高 密封性，同时采用密封薄膜对OLED器件进行覆盖和保护，有效减少渗透到OLED内部的氧气与水汽，从而提高OLED器件的性能，延长OLED器件的使用寿命。
为实现上述目的，本发明提供一种OLED的封装方法，包括如下步骤：
步骤1、提供TFT基板；
所述TFT基板包括显示区域、及位于所述显示区域外围的封装区域，所述TFT基板位于封装区域的结构包括基板、形成于所述基板上的金属层、形成于所述金属层上覆盖所述金属层与基板的栅极绝缘层、形成于所述栅极绝缘层上的刻蚀阻挡层、及形成于所述刻蚀阻挡层上的钝化保护层；
步骤2、将所述TFT基板位于封装区域的上表面制备成凹凸不平的粗糙表面；
步骤3、在所述TFT基板的显示区域上制作OLED器件；
步骤4、提供封装盖板，在所述封装盖板上对应所述TFT基板的封装区域的表面涂覆框胶；
步骤5、在所述封装盖板上所述框胶围成的内部区域贴覆一层密封薄膜；
步骤6、将所述TFT基板、及封装盖板相对贴合；
步骤7、利用紫外光进行照射，使所述框胶固化，从而完成所述封装盖板对TFT基板的封装。
所述步骤2的具体实施方式为：在位于封装区域的钝化保护层表面涂布一层光阻层，通过光罩曝光、及显影制程在光阻层上形成数个间隔排列的通孔。
所述光阻层的厚度与所述通孔的深度为0～50μm。
所述步骤2的具体实施方式为：在位于封装区域的钝化保护层表面涂布一层光阻层，通过光罩曝光、显影、蚀刻、及去光阻制程在所述钝化保护层与刻蚀阻挡层上形成数个间隔排列的凹槽，所述凹槽穿透所述钝化保护层但没有穿透所述刻蚀阻挡层。
所述凹槽的深度为0～50μm。
所述步骤2的具体实施方式为：通过化学气相沉积法在所述钝化保护层上形成具有粗糙表面的无机物层。
所述无机物层的材料为氮化硅或二氧化硅。
所述步骤5中的密封薄膜的厚度为0～100um。
所述步骤5中的密封薄膜的厚度为20um。
本发明还提供一种OLED的封装方法，包括如下步骤：
步骤1、提供TFT基板；
所述TFT基板包括显示区域、及位于所述显示区域外围的封装区域，所述TFT基板位于封装区域的结构包括基板、形成于所述基板上的金属层、形成于所述金属层上覆盖所述金属层与基板的栅极绝缘层、形成于所述栅极绝缘层上的刻蚀阻挡层、及形成于所述刻蚀阻挡层上的钝化保护层；
步骤2、将所述TFT基板位于封装区域的上表面制备成凹凸不平的粗糙表面；
步骤3、在所述TFT基板的显示区域上制作OLED器件；
步骤4、提供封装盖板，在所述封装盖板上对应所述TFT基板的封装区域的表面涂覆框胶；
步骤5、在所述封装盖板上所述框胶围成的内部区域贴覆一层密封薄膜；
步骤6、将所述TFT基板、及封装盖板相对贴合；
步骤7、利用紫外光进行照射，使所述框胶固化，从而完成所述封装盖板对TFT基板的封装；
其中，所述步骤2的具体实施方式为：在位于封装区域的钝化保护层表面涂布一层光阻层，通过光罩曝光、及显影制程在光阻层上形成数个间 隔排列的通孔；
其中，所述步骤5中的密封薄膜的厚度为0～100um。
本发明还提供一种OLED封装结构，包括TFT基板、与TFT基板对应设置的封装盖板，位于所述TFT基板中间的显示区域上的OLED器件，位于所述TFT基板边缘的封装区域与封装盖板对应区域之间的框胶，以及覆盖所述OLED器件并完全填充所述TFT基板与封装盖板之间由所述框胶围成的内部空间的密封薄膜，其中，所述TFT基板边缘的封装区域的上表面为凹凸不平的粗糙表面。
本发明的有益效果：本发明提供的一种OLED的封装方法及OLED封装结构，通过将TFT基板的封装区域的上表面制备成凹凸不平的粗糙表面，增大了框胶与TFT基板的接触面积，增强了封装盖板与TFT基板之间的粘结力，并在OLED封装结构内部设置覆盖OLED器件并填充由框胶所围成的内部空间的密封薄膜，提高了OLED封装结构的密封性，有效减少了渗透到OLED内部的氧气以及水汽，提高了OLED器件的性能，延长了OLED器件的使用寿命。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发 明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明OLED的封装方法的流程图；
图2为本发明OLED的封装方法步骤1提供的TFT基板的剖面示意图；
图3为本发明OLED的封装方法步骤2实施方式1的示意图；
图4为本发明OLED的封装方法步骤2实施方式2的蚀刻制程的示意图；
图5为本发明OLED的封装方法步骤2实施方式2的去光阻制程的示意图；
图6为本发明OLED的封装方法步骤2实施方式3的示意图；
图7为本发明OLED的封装方法的步骤3的示意图；
图8为本发明OLED的封装方法的步骤4的示意图；
图9为本发明OLED的封装方法的步骤5的示意图；
图10为本发明OLED的封装方法的步骤6的示意图；
图11为本发明OLED的封装方法的步骤7的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明提供一种OLED的封装方法，包括如下步骤：
步骤1、如图2所示，提供TFT基板1。
具体的，所述TFT基板1包括显示区域91、及位于所述显示区域91外围的封装区域92，所述TFT基板1位于封装区域92的结构包括基板11、形成于所述基板11上的金属层12、形成于所述金属层12上覆盖所述金属层12与基板11的栅极绝缘层13、形成于所述栅极绝缘层13上的刻蚀阻挡层14、及形成于所述刻蚀阻挡层14上的钝化保护层15。
步骤2、将所述TFT基板1位于封装区域92的上表面制备成凹凸不平的粗糙表面。
具体的，所述步骤2可通过以下3种实施方式来实现：
实施方式1：
如图3所示，在位于封装区域92的钝化保护层15表面涂布一层光阻层16，通过光罩曝光、及显影制程在光阻层16上形成数个间隔排列的通孔 161，从而使所述光阻层16表面变得凹凸不平，在后续封装过程中，可以增大框胶4与TFT基板1表面的接触面积，最终提高封装盖板2与TFT基板1之间的粘结力；
具体的，所述光阻层16的厚度，也即所述通孔161的深度为0～50μm。
实施方式2：
如图4-5所示，在位于封装区域92的钝化保护层15表面涂布一层光阻层16，通过光罩曝光、显影、蚀刻、及去光阻制程在所述钝化保护层15与刻蚀阻挡层14上形成数个间隔排列的凹槽151，所述凹槽151穿透所述钝化保护层15但没有穿透所述刻蚀阻挡层14，从而使所述钝化保护层15与刻蚀阻挡层14上形成凹凸表面，在后续封装过程中，可以增大框胶4与TFT基板1表面的接触面积，最终提高封装盖板2与TFT基板1之间的粘结力；
具体的，所述凹槽151的深度为0～50μm。
实施方式3：
如图6所示，采用化学气相沉积(CVD)技术，通过控制化学气相沉积的温度与电压等参数，在位于封装区域92的钝化保护层15表面形成一层粗糙不平的无机物层17，从而使所述TFT基板1的封装区域表面变得凹凸不平，在后续封装过程中，可以增大框胶4与TFT基板1表面的接触面 积，最终提高封装盖板2与TFT基板1之间的粘结力；
优选的，所述无机物层17的材料为氮化硅(SiNx)或二氧化硅(SiO2)。
步骤3、如图7所示，在所述TFT基板1的显示区域91上制作OLED器件3。
步骤4、提供封装盖板2，如图8所示，在所述封装盖板2上对应所述TFT基板1的封装区域92的表面涂覆框胶4。
步骤5、如图9所示，在所述封装盖板2上所述框胶4围成的内部区域贴覆一层密封薄膜5。
所述密封薄膜5可以吸收侵入框胶4内部的水汽，延长OLED的寿命。所述密封薄膜5的厚度为0～100μm，优选的，所述密封薄膜5的厚度为20μm。
步骤6、如图10所示，将所述TFT基板1、及封装盖板2相对贴合。
具体地，将所述TFT基板1、及封装盖板2相对贴合后，所述密封薄膜5完全覆盖所述OLED器件3，所述密封薄膜5完全填充所述TFT基板1与封装盖板2之间由所述框胶4围成的内部空间，以有效提高OLED的密封性。
步骤7、如图11所示，利用紫外光进行照射，使所述框胶4固化，从 而完成所述封装盖板2对TFT基板1的封装。
基于上述封装方法，请参阅图11，本发明还提供一种OLED封装结构，其包括TFT基板1、与TFT基板1对应设置的封装盖板2，位于所述TFT基板1中间的显示区域91上的OLED器件3，位于所述TFT基板1边缘的封装区域92与封装盖板2对应区域之间的框胶4，以及覆盖所述OLED器件并完全填充所述TFT基板1与封装盖板2之间由所述框胶4围成的内部空间的密封薄膜5；其中，所述TFT基板1的封装区域92的上表面为凹凸不平的粗糙表面。
具体的，请参照图3，所述TFT基板1位于封装区域92的结构可以包括：基板11、形成于所述基板11上的金属层12、形成于所述金属层12上覆盖所述金属层12与基板11的栅极绝缘层13、形成于所述栅极绝缘层13上的刻蚀阻挡层14、形成于所述刻蚀阻挡层14上的钝化保护层15、以及形成于钝化保护层15表面的光阻层16，其中，所述光阻层16上具有数个间隔排列的通孔161，具体的，所述光阻层16的厚度，也即所述通孔161的深度为0～50μm。
可选的，请参照图5，所述TFT基板1位于封装区域92的结构也可以包括：基板11、形成于所述基板11上的金属层12、形成于所述金属层12 上覆盖所述金属层12与基板11的栅极绝缘层13、形成于所述栅极绝缘层13上的刻蚀阻挡层14、及形成于所述刻蚀阻挡层14上的钝化保护层15，其中，所述钝化保护层15与刻蚀阻挡层14上形成数个间隔排列的凹槽151，所述凹槽151穿透所述钝化保护层15但没有穿透所述刻蚀阻挡层14，具体的，所述凹槽151的深度为0～50μm。
可选的，请参照图6，所述TFT基板1位于封装区域92的结构还可以包括：基板11、形成于所述基板11上的金属层12、形成于所述金属层12上覆盖所述金属层12与基板11的栅极绝缘层13、形成于所述栅极绝缘层13上的刻蚀阻挡层14、形成于所述刻蚀阻挡层14上的钝化保护层15、及形成于所述钝化保护层15上的粗糙不平的无机物层17，优选的，所述无机物层17的材料为氮化硅(SiNx)或二氧化硅(SiO2)。
具体的，所述密封薄膜5的厚度为0～100μm，优选的，所述密封薄膜5的厚度为20μm。
综上所述，本发明提供的一种OLED的封装方法及OLED封装结构，通过将TFT基板的封装区域的上表面制备成凹凸不平的粗糙表面，增大了框胶与TFT基板的接触面积，增强了封装盖板与TFT基板之间的粘结力，并在OLED封装结构内部设置覆盖OLED器件并填充由框胶所围成的内部 空间的密封薄膜，提高了OLED封装结构的密封性，有效减少了渗透到OLED内部的氧气以及水汽，提高了OLED器件的性能，延长了OLED器件的使用寿命。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (13)

  1. 一种OLED的封装方法，包括如下步骤：
    步骤1、提供TFT基板；
    所述TFT基板包括显示区域、及位于所述显示区域外围的封装区域，所述TFT基板位于封装区域的结构包括基板、形成于所述基板上的金属层、形成于所述金属层上覆盖所述金属层与基板的栅极绝缘层、形成于所述栅极绝缘层上的刻蚀阻挡层、及形成于所述刻蚀阻挡层上的钝化保护层；
    步骤2、将所述TFT基板位于封装区域的上表面制备成凹凸不平的粗糙表面；
    步骤3、在所述TFT基板的显示区域上制作OLED器件；
    步骤4、提供封装盖板，在所述封装盖板上对应所述TFT基板的封装区域的表面涂覆框胶；
    步骤5、在所述封装盖板上所述框胶围成的内部区域贴覆一层密封薄膜；
    步骤6、将所述TFT基板、及封装盖板相对贴合；
    步骤7、利用紫外光进行照射，使所述框胶固化，从而完成所述封装盖板对TFT基板的封装。
  2. 如权利要求1所述的OLED的封装方法，其中，所述步骤2的具体实施方式为：在位于封装区域的钝化保护层表面涂布一层光阻层，通过光罩曝光、及显影制程在光阻层上形成数个间隔排列的通孔。
  3. 如权利要求2所述的OLED的封装方法，其中，所述光阻层的厚度与所述通孔的深度为0～50μm。
  4. 如权利要求1所述的OLED的封装方法，其中，所述步骤2的具体实施方式为：在位于封装区域的钝化保护层表面涂布一层光阻层，通过光罩曝光、显影、蚀刻、及去光阻制程在所述钝化保护层与刻蚀阻挡层上形成数个间隔排列的凹槽，所述凹槽穿透所述钝化保护层但没有穿透所述刻蚀阻挡层。
  5. 如权利要求4所述的OLED的封装方法，其中，所述凹槽的深度为0～50μm。
  6. 如权利要求1所述的OLED的封装方法，其中，所述步骤2的具体实施方式为：通过化学气相沉积法在所述钝化保护层上形成具有粗糙表面的无机物层。
  7. 如权利要求6所述的OLED的封装方法，其中，所述无机物层的材料为氮化硅或二氧化硅。
  8. 如权利要求1所述的OLED的封装方法，其中，所述步骤5中的密封薄膜的厚度为0～100um。
  9. 如权利要求8所述的OLED的封装方法，其中，所述步骤5中的密封薄膜的厚度为20um。
  10. 一种OLED的封装方法，包括如下步骤：
    步骤1、提供TFT基板；
    所述TFT基板包括显示区域、及位于所述显示区域外围的封装区域，所述TFT基板位于封装区域的结构包括基板、形成于所述基板上的金属层、形成于所述金属层上覆盖所述金属层与基板的栅极绝缘层、形成于所述栅极绝缘层上的刻蚀阻挡层、及形成于所述刻蚀阻挡层上的钝化保护层；
    步骤2、将所述TFT基板位于封装区域的上表面制备成凹凸不平的粗糙表面；
    步骤3、在所述TFT基板的显示区域上制作OLED器件；
    步骤4、提供封装盖板，在所述封装盖板上对应所述TFT基板的封装区域的表面涂覆框胶；
    步骤5、在所述封装盖板上所述框胶围成的内部区域贴覆一层密封薄膜；
    步骤6、将所述TFT基板、及封装盖板相对贴合；
    步骤7、利用紫外光进行照射，使所述框胶固化，从而完成所述封装盖板对TFT基板的封装；
    其中，所述步骤2的具体实施方式为：在位于封装区域的钝化保护层表面涂布一层光阻层，通过光罩曝光、及显影制程在光阻层上形成数个间隔排列的通孔；
    其中，所述步骤5中的密封薄膜的厚度为0～100um。
  11. 如权利要求10所述的OLED的封装方法，其中，所述步骤5中的密封薄膜的厚度为20um。
  12. 如权利要求10所述的OLED的封装方法，其中，所述光阻层的厚度与所述通孔的深度为0～50μm。
  13. 一种OLED封装结构，包括TFT基板、与TFT基板对应设置的封装盖板，位于所述TFT基板中间的显示区域上的OLED器件，位于所述TFT基板边缘的封装区域与封装盖板对应区域之间的框胶，以及覆盖所述OLED器件并完全填充所述TFT基板与封装盖板之间由所述框胶围成的内部空间的密封薄膜，其中，所述TFT基板边缘的封装区域的上表面为凹凸不平的粗糙表面。
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