WO2016045163A1 - Oled的封装方法及oled封装结构 - Google Patents
Oled的封装方法及oled封装结构 Download PDFInfo
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- WO2016045163A1 WO2016045163A1 PCT/CN2014/089615 CN2014089615W WO2016045163A1 WO 2016045163 A1 WO2016045163 A1 WO 2016045163A1 CN 2014089615 W CN2014089615 W CN 2014089615W WO 2016045163 A1 WO2016045163 A1 WO 2016045163A1
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- WIPO (PCT)
- Prior art keywords
- package cover
- oled
- insulating film
- inorganic insulating
- sealant
- Prior art date
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000000565 sealant Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000011248 coating agent Substances 0.000 claims abstract description 14
- 238000000576 coating method Methods 0.000 claims abstract description 14
- 239000003292 glue Substances 0.000 claims description 30
- 238000007789 sealing Methods 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 239000011521 glass Substances 0.000 claims description 9
- 229910004205 SiNX Inorganic materials 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000001678 irradiating effect Effects 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 16
- 229910052760 oxygen Inorganic materials 0.000 description 16
- 239000001301 oxygen Substances 0.000 description 16
- 230000000694 effects Effects 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 11
- 239000002274 desiccant Substances 0.000 description 6
- 238000001723 curing Methods 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 239000005357 flat glass Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000013035 low temperature curing Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
Definitions
- the present invention relates to the field of display technologies, and in particular, to an OLED packaging method and an OLED package structure.
- planar light source technology is a new type of light source, and its technology research and development is close to the market mass production level.
- the bonding of two flat glass sheets is an important technology, and the packaging effect will directly affect the performance of the device.
- UV curing technology is the earliest and most commonly used technology for LCD/OLED packaging. It has the following characteristics: no solvent or a small amount of solvent, which reduces solvent pollution to the environment; low energy consumption, low temperature curing, suitable for heat Sensitive materials; fast curing speed, high efficiency, can be used in high-speed production lines, and the curing equipment has a small footprint.
- the UV glue is an organic material, the molecular gap is large after curing, and the water vapor and the oxygen are relatively easy to pass through the medium to reach the inner sealing region. Therefore, it is more suitable for applications that are less sensitive to moisture and oxygen, such as LCDs.
- OLED devices are very sensitive to water vapor and oxygen. Therefore, when UV packaging is used, there is usually a desiccant inside the device to reduce the water vapor that reaches the inner sealing region through the medium, thereby prolonging the service life of the OLED device.
- UV packaging of OLEDs is to find UV adhesives with lower water vapor transmission rate. This requires that the organic molecules of the UV gel are more closely packed between the molecules after solidification, thereby narrowing the water vapor permeation channels between the molecules and reducing the water vapor permeation rate.
- Frit packaging technology is a new flat glass packaging technology currently under development, and there is almost no relevant literature report in mainland China. It is a solution in which the glass powder is made into a certain viscosity, coated on the packaging glass, heated to remove the solvent, and then bonded to the glass to be packaged, and the frit glass powder is instantaneously burned and melted by a laser to thereby form two plates. The glass is bonded together. Because Frit technology is an inorganic packaging medium, its ability to block water vapor and oxygen is strong. Particularly suitable for OLED technology sensitive to water vapor and oxygen. At present, the technical patents of the frit package are monopolized by a few foreign companies.
- An object of the present invention is to provide a method for packaging an OLED, which can improve the packaging effect of the OLED, improve the ability of the OLED package structure to block water vapor and oxygen, and prolong the service life of the OLED device.
- Another object of the present invention is to provide an OLED package structure which has a good encapsulation effect and can block water vapor and oxygen. Since the package structure does not use a desiccant, it is suitable for all bottom emission, top emission and double sided. Display of OLED devices.
- the present invention provides a method for packaging an OLED, comprising the following steps:
- Step 1 providing a package cover plate and a substrate, wherein the package cover plate is provided with a glue application position for applying the frame glue;
- Step 2 forming a sealing ring on the outer side of the coating position on the package cover;
- Step 3 applying a ring of sealant on the glue coating position on the package cover;
- Step 4 attaching the package cover to the substrate
- Step 5 using a UV light source to illuminate the sealant to cure it, thereby implementing a package cover pair The packaging of the substrate.
- the package cover is a glass plate, and the substrate is a TFT substrate provided with an OLED device.
- the distance between the outer edge of the sealing ring on the side of the glue application position and the center line of the glue application position is 0.5 mm to 2.5 mm.
- the sealing ring has a width of 20 um to 2000 um and a height of 3 um to 50 um, and the width and height of the sealing ring on the same package cover are uniform.
- the sealing ring is a ring of inorganic insulating film; the inorganic insulating film is made of SiO 2 or SiNx, and the inorganic insulating film is prepared by chemical vapor deposition and then etched.
- the sealing ring is a structure in which an inorganic insulating film is disposed on the metal layer; the structure is formed by first forming a metal layer on the outer side of the glue coating position on the package cover, and then corresponding to the metal layer on the metal layer. Forming a ring of inorganic insulating film; the metal layer is molybdenum, and the material of the inorganic insulating film is SiO 2 or SiNx, and the inorganic insulating film is prepared by chemical vapor deposition method and then etched. .
- the sealant is a UV glue, and the height of the sealant is greater than the height of the seal ring.
- the width of the sealant is 1mm ⁇ 5mm.
- the invention also provides a package structure of an OLED, comprising a package cover plate, a substrate sealedly connected to the package cover plate, a sealant disposed between the package cover plate and the substrate, and a sealing ring located outside the sealant.
- the sealing ring is a ring of inorganic insulating film, or the sealing ring is a structure in which an inorganic insulating film is disposed on the metal layer.
- the invention has the advantages that the packaging method of the OLED provided by the invention is simple and easy, and the operability is strong, which combines the advantages of the UV package and the frit package, by providing a ring of inorganic insulating film on the package cover plate, and The inorganic insulating film is disposed outside the sealant, and the inorganic insulating film is used to block water vapor and oxygen, thereby significantly improving the packaging effect, improving the ability to block water vapor and oxygen, prolonging the service life of the OLED device, and packaging the OLED package structure provided by the present invention.
- Good effect can block water vapor and oxygen, extend the service life of OLED devices, and eliminate the need for desiccant, so it is suitable for all OLED devices with bottom emission, top emission and double-sided display.
- FIG. 1 is a flow chart of a method of packaging an OLED of the present invention
- step 2 is a schematic top plan view of step 2 of a method for packaging an OLED according to the present invention
- FIG. 3 is a schematic cross-sectional view of a sealing ring 7 fabricated in step 2 of the packaging method of the OLED of the present invention
- FIG. 4 is a schematic cross-sectional view of a sealing ring 7' produced in step 2 of the packaging method of the OLED of the present invention
- step 3 is a top plan view of step 3 of a method for packaging an OLED according to the present invention.
- FIG. 6 is a cross-sectional view showing the step 3 of the packaging method of the OLED of the present invention.
- FIG. 7 is a cross-sectional view showing the step 5 of the packaging method of the OLED of the present invention.
- the present invention provides a method for packaging an OLED, including the following steps:
- Step 1 Providing a package cover 1 and a substrate 5.
- the package cover 1 is a glass plate.
- the substrate 5 is a TFT substrate provided with an OLED device 6.
- the package cover 1 is provided with a glue application position 8 for applying the sealant 2 .
- Step 2 As shown in Fig. 2, a seal ring 7 (7') is formed on the outside of the glue application position 8 on the package cover 1.
- the sealing ring 7 may be a ring of inorganic insulating film 3.
- the inorganic insulating film 3 is deposited by CVD (Chemical Vapor Deposition) and then etched to the outside of the glue application position 8.
- the material of the inorganic insulating film 3 is SiO 2 or SiNx.
- the sealing ring 7' of the present invention may be a structure in which the inorganic insulating film 3 is disposed on the metal layer 4.
- the structure is fabricated by first packaging.
- a metal layer 4 is formed on the outer side of the coating position 8 on the cover 1, and then a circular insulating film 3 is formed on the metal layer 4 corresponding to the metal layer 4.
- the metal layer 4 is molybdenum.
- the inorganic insulating film 3 is deposited by CVD (Chemical Vapor Deposition) and then formed on the metal layer 4 by etching.
- the material of the inorganic insulating film 3 is SiO 2 or SiNx.
- the seal ring 7 (7') has a width of 20 um to 2000 um and a height of 3 um to 50 um, and the width and height of the seal ring 7 (7') on the same package cover 1 are uniform at different positions.
- the distance between the outer edge of the seal ring 7 (7') near the glue application position 8 and the center line of the glue application position 8 is 0.5 mm to 2.5 mm.
- the sealing ring 7 (7') is disposed outside the coating position 8, and functions to block water vapor and oxygen, thereby significantly improving the packaging effect and prolonging the service life of the OLED device, and the invention does not need to use a desiccant.
- Step 3 as shown in FIG. 5 and FIG. 6, a frame seal 2 is coated on the glue coating position 8 on the package cover 1.
- the height of the sealant 2 is greater than the height of the inorganic insulating film 3.
- the width of the sealant 2 is 1 mm to 5 mm after the package cover 1 and the substrate 5 are relatively bonded by controlling the coating amount of the sealant 2.
- the sealant 2 is a UV glue.
- Step 4 The package cover 1 and the substrate 5 are oppositely bonded.
- the width of the sealant 2 is 1 mm to 5 mm.
- Step 5 The frame glue 2 is irradiated with a UV light source to be cured, thereby encapsulating the substrate 5 of the package cover 1 .
- the present invention further provides an OLED package structure, including a package cover plate 1 , a substrate 5 sealingly connected to the package cover plate 1 , and a cover plate 1 and a substrate 5 .
- the package cover 1 is a glass plate.
- the substrate 5 is a TFT substrate provided with an OLED device 6.
- the sealant 2 is a UV glue.
- the width of the sealant 2 is 1 mm to 5 mm, and the distance between the outer edge of the seal ring 7 (7') near the glue application position 8 and the center line of the sealant 2 is 0.5 mm to 2.5. Mm.
- the seal ring 7 may be a ring of inorganic insulating film 3.
- the sealing ring 7' may be a structure in which the inorganic insulating film 3 is provided on the metal layer 4.
- the material of the inorganic insulating film 3 is SiO 2 or SiNx, and the metal layer 4 is molybdenum.
- the OLED packaging method provided by the present invention is simple and easy to operate, and has high operability. It combines the advantages of the UV package and the frit package by providing a ring of inorganic insulating film on the package cover and the inorganic
- the insulating film is disposed outside the sealant, and the inorganic insulating film is used to block water vapor and oxygen, thereby significantly improving the packaging effect, improving the ability to block moisture and oxygen, prolonging the service life of the OLED device, and the package effect of the OLED package structure provided by the present invention.
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
一种OLED的封装方法及OLED封装结构,所述方法包括如下步骤:步骤1、提供封装盖板(1)、及基板(5),所述封装盖板(1)上设有用于涂覆框胶(2)的涂胶位置(8);步骤2、在封装盖板(1)上所述涂胶位置(8)的外侧制作一密封圈(7或7');步骤3、在封装盖板(1)上所述涂胶位置(8)上涂覆一圈框胶(2);步骤4、将封装盖板(1)与基板(5)相对贴合;步骤5、使用UV光源对框胶(2)进行照射使其固化,从而实现封装盖板(1)对基板(5)的封装。
Description
本发明涉及显示技术领域,尤其涉及一种OLED的封装方法及OLED封装结构。
在显示技术领域,平板显示技术LCD(液晶显示器)、OLED(有机发光二极管)已经逐步取代CRT显示器。平面光源技术是新型的光源,其技术研发已经接近市场化量产水平。在平板显示与平面光源技术当中,对于两片平板玻璃的粘结是一项很重要的技术,其封装效果将直接影响器件的性能。
紫外光(UV)固化技术是LCD/OLED封装最早也是最常用的技术,其具有如下特点:不用溶剂或少量溶剂,减少了溶剂对环境的污染;耗能少,可低温固化,适用于对热敏感的材料;固化速度快,效率高,可在高速生产线上使用,固化设备占地面积小等。但是,由于UV胶是有机材料,其固化后分子间隙较大,水汽与氧气比较容易透过介质抵达内部密封区域。所以,其比较适合用于对水汽、氧气不太敏感的应用领域,比如LCD。由
于OLED器件对水汽、氧气非常敏感,所以采用UV封装时,器件内部通常会有干燥剂,以减小透过介质抵达内部密封区域的水汽,从而延长OLED器件的使用寿命。
目前,针对OLED的UV封装,一个主要的研究方向就是寻找水汽透过率更低的UV胶材。这需要UV胶的有机分子在固化后,分子之间堆积得更紧密,从而使分子之间的水汽渗透通道变窄,水汽渗透速率变小。
Frit封装技术是目前正在研发的新型平板玻璃封装技术,在中国大陆几乎没有相关的文献报导。它是将玻璃粉配成一定粘度的溶液,涂覆在封装玻璃上,加热除去溶剂,然后与待封装玻璃贴合,利用激光(laser)将frit玻璃粉瞬间烧至融化,从而将两片平板玻璃粘结在一起。Frit技术由于是无机封装介质,所以其阻止水汽与氧气的能力很强。特别适合对水汽、氧气敏感的OLED技术。目前,frit封装的技术专利被国外少数几家公司垄断。
现有的OLED的UV封装方法大多仅在封装盖板表面上涂覆UV胶,然后与TFT基板相对贴合,再经UV光照射使UV胶固化,从而实现将封装盖板与TFT基板的封装。由于设置于TFT基板上的OLED器件对水汽、氧气非常敏感,但该现有的UV封装方法阻止水汽、氧气的能力较差,所以通常需要设置干燥剂,以减小透过UV胶抵达内部密封区域的水汽,延
长OLED器件的使用寿命,由此引发的问题是,该现有的UV封装方法只适合于底发射的OLED器件结构。而Frit封装的阻水效果虽好,但是制程复杂、设备昂贵。
发明内容
本发明的目的在于提供一种OLED的封装方法,其能够改善OLED的封装效果,提高OLED封装结构阻挡水汽、氧气的能力,延长OLED器件的使用寿命。
本发明的另一目的在于提供一种OLED封装结构,该OLED封装结构的封装效果良好,可以阻挡水汽和氧气,由于该封装结构不使用干燥剂,因而适用于所有底发射、顶发射及双面显示的OLED器件。
为实现上述目的,本发明提供一种OLED的封装方法,包括如下步骤:
步骤1、提供封装盖板、及基板,所述封装盖板上设有用于涂覆框胶的涂胶位置;
步骤2、在封装盖板上所述涂胶位置的外侧制作一密封圈;
步骤3、在封装盖板上所述涂胶位置上涂覆一圈框胶;
步骤4、将封装盖板与基板相对贴合;
步骤5、使用UV光源对框胶进行照射使其固化,从而实现封装盖板对
基板的封装。
所述封装盖板为玻璃板,所述基板为设有OLED器件的TFT基板。
所述步骤2中,所述密封圈靠近涂胶位置一侧的外边缘与涂胶位置的中心线的距离为0.5mm~2.5mm。
所述密封圈的宽度为20um~2000um,高度为3um~50um,且同一封装盖板上所述密封圈不同位置的宽度、高度一致。
所述密封圈为一圈无机绝缘薄膜;所述无机绝缘薄膜的材料为SiO2或SiNx,所述无机绝缘薄膜是采用化学气相沉积方法镀膜,然后再刻蚀的方式制备得到的。
所述密封圈为金属层上设置有无机绝缘薄膜的结构;该结构的制作方法为:先在封装盖板上涂胶位置的外侧形成一圈金属层,然后在该金属层上对应该金属层形成一圈无机绝缘薄膜;所述金属层为钼,所述无机绝缘薄膜的材料为SiO2或SiNx,所述无机绝缘薄膜是采用化学气相沉积方法镀膜,然后再使用刻蚀的方式制备得到的。
所述步骤3中,所述框胶为UV胶,所述框胶的高度大于密封圈的高度。
所述步骤4中,将封装盖板与基板相对贴合后,框胶的宽度为
1mm~5mm。
本发明还提供一种OLED的封装结构,包括封装盖板、密封连接于封装盖板上的基板、设于封装盖板与基板之间的框胶及位于框胶外侧的密封圈。
所述密封圈为一圈无机绝缘薄膜,或者所述密封圈为金属层上设置有无机绝缘薄膜的结构。
本发明的有益效果:本发明提供的OLED的封装方法简单易行,可操作性强,其结合了UV封装与frit封装的优点,通过在封装盖板上设置一圈无机绝缘薄膜,且将该无机绝缘薄膜设置于框胶外侧,利用该无机绝缘薄膜阻挡水汽、氧气,从而显著改善封装效果,提高阻挡水汽、氧气的能力,延长OLED器件的使用寿命,并且本发明提供的OLED封装结构的封装效果良好,可以阻挡水汽和氧气,延长了OLED器件的使用寿命,且无需使用干燥剂,因而适用于所有底发射、顶发射及双面显示的OLED器件。
为了能更进一步了解本发明的特征以及技术内容,请参阅以下有关本发明的详细说明与附图,然而附图仅提供参考与说明用,并非用来对本发明加以限制。
下面结合附图,通过对本发明的具体实施方式详细描述,将使本发明的技术方案及其他有益效果显而易见。
附图中,
图1为本发明OLED的封装方法的流程图;
图2为本发明OLED的封装方法的步骤2的俯视示意图;
图3为本发明OLED的封装方法步骤2中制作的密封圈7的剖面示意图;
图4为本发明OLED的封装方法步骤2中制作的密封圈7’的剖面示意图;
图5为本发明OLED的封装方法的步骤3的俯视示意图;
图6为本发明OLED的封装方法的步骤3的剖面示意图;
图7为本发明OLED的封装方法的步骤5的剖面示意图。
为更进一步阐述本发明所采取的技术手段及其效果,以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1至图7,本发明提供一种OLED的封装方法,包括如下步骤:
步骤1、提供封装盖板1及基板5。
优选的,所述封装盖板1为玻璃板。优选的,所述基板5为设有OLED器件6的TFT基板。
具体的,所述封装盖板1上设有用于涂覆框胶2的涂胶位置8。
步骤2、如图2所示,在封装盖板1上所述涂胶位置8的外侧制作一密封圈7(7’)。
具体的,如图3所示,所述密封圈7可以为一圈无机绝缘薄膜3。
具体的,该无机绝缘薄膜3采用CVD(化学气相沉积)镀膜,然后再刻蚀的方式制备于所述涂胶位置8的外侧。
优选的,所述无机绝缘薄膜3的材料为SiO2或SiNx。
作为另一种可选的技术方案,如图4所示,本发明的所述密封圈7’可以为金属层4上设置有无机绝缘薄膜3的结构,该结构的制作方法为:先在封装盖板1上涂胶位置8的外侧形成一圈金属层4,然后在该金属层4上对应该金属层4形成一圈无机绝缘薄膜3。
优选的,所述金属层4为钼。所述无机绝缘薄膜3采用CVD(化学气相沉积)镀膜,然后再使用刻蚀的方式制备于所述金属层4上。优选的,所述无机绝缘薄膜3的材料为SiO2或SiNx。
优选的,所述密封圈7(7’)的宽度为20um~2000um,高度为3um~50um,并且同一封装盖板1上的密封圈7(7’)不同位置的宽度、高度一致。优选的,所述密封圈7(7’)靠近涂胶位置8一侧的外边缘与涂胶位置8的中心线的距离为0.5mm~2.5mm。
该密封圈7(7’)设置于所述涂胶位置8的外侧,起到阻挡水汽、氧气的作用,从而显著改善封装效果,延长OLED器件的使用寿命,且本发明无需使用干燥剂,适用于所有底发射、顶发射及双面显示的OLED器件。
步骤3、如图5与图6所示,在封装盖板1上所述涂胶位置8上涂覆一圈框胶2。
具体的,该框胶2的高度大于无机绝缘薄膜3的高度。
通过控制框胶2的涂覆量,使得封装盖板1与基板5相对贴合后,框胶2的宽度为1mm~5mm。
优选的,该框胶2为UV胶。
步骤4、将封装盖板1与基板5相对贴合。
将封装盖板1与基板5相对贴合后,框胶2的宽度为1mm~5mm。
步骤5、使用UV光源对框胶2进行照射使其固化,从而实现封装盖板1对基板5的封装。
如图7所示,基于上述的封装方法,本发明还提供一种OLED封装结构,包括封装盖板1、密封连接于封装盖板1上的基板5、设于封装盖板1与基板5之间的框胶2及位于框胶2外侧的密封圈7(7’)。
所述封装盖板1为玻璃板。所述基板5为设有OLED器件6的TFT基板。所述框胶2为UV胶。
优选的,所述框胶2的宽度为1mm~5mm,所述密封圈7(7’)靠近涂胶位置8一侧的外边缘与所述框胶2的中心线的距离为0.5mm~2.5mm。
所述密封圈7可以为一圈无机绝缘薄膜3。
作为另一种可选方案,所述密封圈7’可以为金属层4上设置有无机绝缘薄膜3的结构。优选的,所述无机绝缘薄膜3的材料为SiO2或SiNx,所述金属层4为钼。
综上所述,本发明提供的OLED的封装方法简单易行,可操作性强,其结合了UV封装与frit封装的优点,通过在封装盖板上设置一圈无机绝缘薄膜,且将该无机绝缘薄膜设置于框胶外侧,利用该无机绝缘薄膜阻挡水汽、氧气,从而显著改善封装效果,提高阻挡水汽、氧气的能力,延长OLED器件的使用寿命,并且本发明提供的OLED封装结构的封装效果良好,可以阻挡水汽和氧气,延长了OLED器件的使用寿命,且无需使用干燥剂,
因而适用于所有底发射、顶发射及双面显示的OLED器件。
以上所述,对于本领域的普通技术人员来说,可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形,而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。
Claims (11)
- 一种OLED的封装方法,包括如下步骤:步骤1、提供封装盖板、及基板,所述封装盖板上设有用于涂覆框胶的涂胶位置;步骤2、在封装盖板上所述涂胶位置的外侧制作一密封圈;步骤3、在封装盖板上所述涂胶位置上涂覆一圈框胶;步骤4、将封装盖板与基板相对贴合;步骤5、使用UV光源对框胶进行照射使其固化,从而实现封装盖板对基板的封装。
- 如权利要求1所述的OLED的封装方法,其中,所述封装盖板为玻璃板,所述基板为设有OLED器件的TFT基板。
- 如权利要求1所述的OLED的封装方法,其中,所述步骤2中,所述密封圈靠近涂胶位置一侧的外边缘与涂胶位置的中心线的距离为0.5mm~2.5mm。
- 如权利要求1所述的OLED的封装方法,其中,所述密封圈的宽度为20um~2000um,高度为3um~50um,且同一封装盖板上所述密封圈不同位置的宽度、高度一致。
- 如权利要求1所述的OLED的封装方法,其中,所述密封圈为一圈无机绝缘薄膜;所述无机绝缘薄膜的材料为SiO2或SiNx,所述无机绝缘薄膜是采用化学气相沉积方法镀膜,然后再刻蚀的方式制备得到的。
- 如权利要求1所述的OLED的封装方法,其中,所述密封圈为金属层上设置有无机绝缘薄膜的结构;该结构的制作方法为:先在封装盖板上涂胶位置的外侧形成一圈金属层,然后在该金属层上对应该金属层形成一圈无机绝缘薄膜;所述金属层为钼,所述无机绝缘薄膜的材料为SiO2或SiNx,所述无机绝缘薄膜是采用化学气相沉积方法镀膜,然后再使用刻蚀的方式制备得到的。
- 如权利要求1所述的OLED的封装方法,其中,所述步骤3中,所述框胶为UV胶,所述框胶的高度大于密封圈的高度。
- 如权利要求1所述的OLED的封装方法,其中,所述步骤4中,将封装盖板与基板相对贴合后,框胶的宽度为1mm~5mm。
- 一种OLED封装结构,包括封装盖板、密封连接于封装盖板上的基板、设于封装盖板与基板之间的框胶及位于框胶外侧的密封圈。
- 如权利要求9所述的OLED封装结构,其中,所述密封圈为一圈无机绝缘薄膜,或者所述密封圈为金属层上设置有无机绝缘薄膜的结构。
- 一种OLED封装结构,包括封装盖板、密封连接于封装盖板上的基板、设于封装盖板与基板之间的框胶及位于框胶外侧的密封圈;其中,所述密封圈为一圈无机绝缘薄膜,或者所述密封圈为金属层上设置有无机绝缘薄膜的结构。
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