WO2017161628A1 - Oled基板的封装方法与oled封装结构 - Google Patents

Oled基板的封装方法与oled封装结构 Download PDF

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Publication number
WO2017161628A1
WO2017161628A1 PCT/CN2016/080280 CN2016080280W WO2017161628A1 WO 2017161628 A1 WO2017161628 A1 WO 2017161628A1 CN 2016080280 W CN2016080280 W CN 2016080280W WO 2017161628 A1 WO2017161628 A1 WO 2017161628A1
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Prior art keywords
layer
substrate
oled
package
oled substrate
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PCT/CN2016/080280
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English (en)
French (fr)
Inventor
曾维静
徐源竣
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深圳市华星光电技术有限公司
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Priority to US15/106,817 priority Critical patent/US10043861B2/en
Publication of WO2017161628A1 publication Critical patent/WO2017161628A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/841—Self-supporting sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/874—Passivation; Containers; Encapsulations including getter material or desiccant
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method for packaging an OLED substrate and an OLED package structure.
  • OLED is an Organic Light-Emitting Diode, which has the characteristics of self-illumination, high brightness, wide viewing angle, high contrast, flexibility, low energy consumption, etc., and has received extensive attention as a new generation display mode. It has gradually replaced the traditional liquid crystal display (LCD), which is widely used in mobile phone screens, computer monitors, and full color TVs.
  • LCD liquid crystal display
  • the organic material is easily reacted with water and oxygen, a small amount of water vapor and oxygen can damage the organic light-emitting material, deteriorating the luminescent properties of the device. Therefore, how to reduce the penetration of water vapor and oxygen into the device packaging material and eliminate the water vapor and oxygen inside the device is an important problem to be solved by the organic electroluminescent device packaging technology. In order to realize the commercialization of OLED display panels, the related packaging technology has become a research hotspot.
  • UV curing frame glue glass powder laser sealing, face seal, frame glue and dam and fill
  • film packaging and the like ultraviolet curing frame glue
  • UV curing frame glue, frame glue and desiccant filling package (dam and fill) will use organic frame glue
  • some new packaging technology will also be combined with the use of organic frame glue. Therefore, the organic encapsulation effect is very important, and the adhesion of the sealant to the surface of the substrate is an important factor determining the encapsulation effect, so that the surface material of the sealant-coated region (ie, the package region) appears in the process of fabricating the OLED substrate. Very important.
  • the OLED substrate includes a display area, and a package area located at a periphery of the display area.
  • the structure of the OLED substrate located in the display area includes a substrate. 100.
  • the etch stop layer 500 on the semiconductor layer 400 and the gate insulating layer 300, the source/drain metal layer 600 on the etch stop layer 500, the semiconductor layer 400, and the gate insulating layer 300 are located at the source a drain metal layer 600, an etch stop layer 500, and a passivation layer 700 on the gate insulating layer 300, an anode 810 on the passivation layer 700, and the anode 810 and the passivation layer 700 a pixel defining layer 820, and a light emitting layer 850 located on the pixel defining layer 820;
  • the structure of the OLED substrate in the package region includes a substrate 100, a gate metal layer 200 on the substrate 100, a gate insulating layer 300 on the gate metal layer 200, and the gate insulating layer 300.
  • the surface area of the encapsulated OLED substrate is a passivation layer (passivation layer) 700, and the passivation layer material 700 is typically silicon oxide (SiO x).
  • passivation layer 700 is typically silicon oxide (SiO x).
  • An object of the present invention is to provide a method for packaging an OLED substrate, which can improve the adhesion between the sealant and the OLED substrate, and achieve the effect of improving the sealing performance of the sealant.
  • the object of the present invention is to provide an OLED package structure, which has good adhesion to the OLED substrate and good sealing property, and can effectively reduce oxygen and water vapor permeating into the OLED, thereby improving the performance of the OLED device and extending the OLED. The life of the device.
  • the present invention provides a method for packaging an OLED substrate, comprising the following steps:
  • Step 1 Providing a TFT substrate, the TFT substrate includes a display area, and a package area located at a periphery of the display area;
  • Step 2 sequentially forming a silicon oxide layer and a silicon oxynitride layer on the display region and the package region of the TFT substrate;
  • Step 3 sequentially preparing an anode, a pixel defining layer, and a light emitting layer on the display area of the TFT substrate to obtain an OLED substrate;
  • Step 4 providing a package cover, and coating a surface of the package surface of the OLED substrate with a sealant on the package cover;
  • Step 5 the OLED substrate and the package cover plate are relatively attached
  • Step 6 curing the sealant to complete packaging of the OLED substrate by the package cover.
  • the structure of the TFT substrate in the display region includes a substrate, a gate metal layer on the substrate, a gate insulating layer on the gate metal layer and the substrate, and a semiconductor layer on the gate insulating layer.
  • the structure of the TFT substrate in the package area includes a substrate, a gate on the substrate a metal layer, a gate insulating layer on the gate metal layer, an etch stop layer on the gate insulating layer, and a source drain metal layer on the etch stop layer.
  • the silicon oxide layer and the silicon oxynitride layer are obtained by a chemical vapor deposition method, and the reaction formula for forming a silicon oxide layer by chemical vapor deposition is: SiH 4 + N 2 O ⁇ SiO x ;
  • the reaction formula for forming a silicon oxynitride layer by a vapor deposition method is: SiH 4 + N 2 O + N 2 ⁇ SiO x N y .
  • the silicon oxide layer has a thickness of 1500 to 4000 nm; and the silicon oxynitride layer has a thickness of 0 to 500 nm.
  • the step 4 further includes: forming a sealing film on a region of the package cover plate located in the sealant; the package cover plate is a glass substrate; the sealing film is made of a polymer material containing a desiccant or a polymer material that blocks moisture; in the step 6, the frame glue is cured by ultraviolet light irradiation or heating.
  • the present invention also provides an OLED package structure, including an OLED substrate, a package cover plate disposed opposite to the OLED substrate, and a sealant between the OLED substrate and the package cover plate;
  • the OLED substrate includes a display area and a package area located at a periphery of the display area, and a surface layer of the package area of the OLED substrate is a silicon oxynitride layer, and the sealant is located at a package area of the OLED substrate and a package cover Between so that the sealant is in contact with the silicon oxynitride layer.
  • the structure of the OLED substrate in the display region includes a substrate, a gate metal layer on the substrate, a gate insulating layer on the gate metal layer and the substrate, and a semiconductor layer on the gate insulating layer.
  • the structure of the OLED substrate in the package region includes a substrate, a gate metal layer on the substrate, a gate insulating layer on the gate metal layer, and an etch barrier layer on the gate insulating layer a source/drain metal layer on the etch stop layer, a silicon oxide layer on the source/drain metal layer, and a silicon oxynitride layer on the silicon oxide layer.
  • the silicon oxide layer has a thickness of 1500 to 4000 nm; and the silicon oxynitride layer has a thickness of 0 to 500 nm.
  • the OLED substrate further includes a sealing film that completely fills an inner space surrounded by the sealant between the OLED substrate and the package cover.
  • the package cover is a glass substrate; the material of the sealing film is a high score containing a desiccant Submaterial or polymer material that blocks moisture.
  • the invention also provides a method for packaging an OLED substrate, comprising the following steps:
  • Step 1 Providing a TFT substrate, the TFT substrate includes a display area, and a package area located at a periphery of the display area;
  • Step 2 sequentially forming a silicon oxide layer and a silicon oxynitride layer on the display region and the package region of the TFT substrate;
  • Step 3 sequentially preparing an anode, a pixel defining layer, and a light emitting layer on the display area of the TFT substrate to obtain an OLED substrate;
  • Step 4 providing a package cover, and coating a surface of the package surface of the OLED substrate with a sealant on the package cover;
  • Step 5 the OLED substrate and the package cover plate are relatively attached
  • Step 6 curing the sealant to complete packaging of the OLED substrate by the package cover
  • the structure of the TFT substrate in the display region includes a substrate, a gate metal layer on the substrate, a gate insulating layer on the gate metal layer and the substrate, and the gate insulating layer. a semiconductor layer, an etch stop layer on the semiconductor layer and the gate insulating layer, and a source/drain metal layer on the etch stop layer, the semiconductor layer, and the gate insulating layer;
  • the structure of the TFT substrate in the package region includes a substrate, a gate metal layer on the substrate, a gate insulating layer on the gate metal layer, and an etch barrier layer on the gate insulating layer. And a source and drain metal layer on the etch stop layer;
  • the silicon oxide layer and the silicon oxynitride layer are obtained by a chemical vapor deposition method, and the reaction formula of the silicon oxide layer formed by the chemical vapor deposition method is: SiH 4 + N 2 O ⁇ SiO x ;
  • the reaction formula for forming a silicon oxynitride layer by a chemical vapor deposition method is: SiH 4 + N 2 O + N 2 ⁇ SiO x N y .
  • the present invention provides a method for packaging an OLED substrate.
  • the passivation layer is formed into two layers, one layer being a conventional silicon oxide layer and one layer being nitrogen.
  • the silicon oxide layer during the encapsulation process, the silicon oxynitride layer is in direct contact with the sealant, and the adhesion between the sealant and the silicon oxynitride material is strong, thereby improving the adhesion between the sealant and the OLED substrate, thereby improving the frame.
  • the effect of the glue package performance is a conventional silicon oxide layer and one layer being nitrogen.
  • the OLED package structure provided by the present invention improves the adhesion of the sealant to the OLED substrate by setting the surface layer of the package region of the OLED substrate to a silicon oxynitride layer and utilizing the strong adhesion between the sealant and the silicon oxynitride material. Adhesion, to achieve the effect of improving the sealing performance of the sealant.
  • FIG. 1 is a schematic structural view of a conventional OLED substrate
  • FIG. 2 is a flow chart of a method of packaging an OLED substrate of the present invention
  • FIG. 3 is a schematic structural view of a TFT substrate provided in step 1 of a method for packaging an OLED substrate of the present invention
  • step 2 is a schematic diagram of step 2 of a method for packaging an OLED substrate of the present invention.
  • FIG. 5 is a schematic structural view of an OLED substrate prepared in step 3 of the method for packaging an OLED substrate of the present invention
  • step 4 is a schematic diagram of step 4 of a method of packaging an OLED substrate of the present invention.
  • FIG. 7 is a schematic diagram of steps 5-6 of the method of packaging an OLED substrate of the present invention.
  • the present invention provides a method for packaging an OLED substrate, including the following steps:
  • a TFT substrate 10 is provided.
  • the TFT substrate 10 includes a display area and a package area located at the periphery of the display area.
  • the structure of the TFT substrate 10 in the display area includes a substrate 1, a gate metal layer 2 on the substrate 1, a gate insulating layer 3 on the gate metal layer 2 and the substrate 1, and the gate a semiconductor layer 4 on the pole insulating layer 3, an etch stop layer 5 on the semiconductor layer 4 and the gate insulating layer 3, and the etch barrier layer 5, the semiconductor layer 4, and the gate insulating layer 3 Source drain metal layer 6 on.
  • the structure of the TFT substrate 10 in the package region includes a substrate 1, a gate metal layer 2 on the substrate 1, a gate insulating layer 3 on the gate metal layer 2, and the gate insulating layer.
  • the gate metal layer 2 includes a first gate 21 and a second gate 22 which are disposed at intervals;
  • the semiconductor layer 4 includes a first semiconductor layer 41 and a second semiconductor layer 42 which are disposed at intervals;
  • the source/drain metal layer 6 includes a first source 61, a first drain 62, and a first interval. a second source 63 and a second drain 64;
  • the gate insulating layer 3 is provided with a through hole 31, and the first drain 62 is in contact with the first gate 21 through the through hole 31;
  • the first gate 21, the first semiconductor layer 41, the first source 61, and the first drain 62 constitute a switching thin film transistor (Switching TFT); the second gate 22, the second semiconductor layer 42, The second source 63 and the second drain 64 constitute a driving thin film transistor (Driving TFT).
  • Step 2 As shown in FIG. 4, a silicon oxide (SiO x ) layer 71 and a silicon oxynitride (SiO x N y ) layer 72 are sequentially formed on the display region and the package region of the TFT substrate 10, and the silicon oxide layer is formed. 71 and the silicon oxynitride layer 72 together form a passivation layer.
  • the silicon oxide layer 71 and the silicon oxynitride layer 72 are both obtained by chemical vapor deposition (CVD).
  • reaction formula for forming the silicon oxide layer 71 by the chemical vapor deposition method is: SiH 4 + N 2 O ⁇ SiO x .
  • reaction formula for forming the silicon oxynitride layer 72 by the chemical vapor deposition method is: SiH 4 + N 2 O + N 2 ⁇ SiO x N y .
  • the silicon oxide layer 71 has a thickness of 1500 to 4000 nm.
  • the silicon oxynitride layer 72 has a thickness of 0 to 500 nm, preferably 0 to 100 nm.
  • Step 3 As shown in FIG. 5, an anode 81, a pixel defining layer 82, and a light emitting layer 85 are sequentially formed on the display region of the TFT substrate 10 to obtain an OLED substrate 20.
  • the step 3 includes the following steps:
  • Step 31 using a lithography process to pattern the silicon oxide layer 71 and the silicon oxynitride layer 72 to obtain a first via 75 corresponding to the second drain 64;
  • Step 32 forming a conductive layer on the passivation layer 70, and patterning the conductive layer by a photolithography process to obtain an anode 81.
  • the anode 81 passes through the first via 75 and the second drain. 64-phase contact;
  • Step 33 forming a pixel defining layer 82 on the anode 81 and the passivation layer 70, using a lithography process to graphically process the pixel defining layer 82 to obtain a second via 83 corresponding to the upper portion of the anode 81;
  • Step 34 forming a light-emitting layer 85 on the pixel defining layer 82, and the light-emitting layer 85 is in contact with the anode 81 via the second via 83.
  • the material of the pixel defining layer 82 is an organic photoresist.
  • the material of the anode 81 may be a transparent conductive metal oxide such as ITO (indium tin oxide); when the OLED substrate 20 is a top-emitting OLED substrate, the anode 81 may be a laminated structure of Ag/ITO/Ag.
  • the light-emitting layer 85 is prepared by evaporation or solution film formation.
  • Step 4 as shown in FIG. 6, a package cover 30 is provided, and a sealant 40 is coated on the surface of the package cover 30 corresponding to the package area of the OLED substrate 20; A sealing film 50 is formed on a region inside the sealant 40.
  • the material of the sealing film 50 is a polymer material containing a desiccant or a polymer material capable of blocking moisture.
  • the desiccant may be an inorganic substance such as calcium oxide or sodium oxide or a polymer resin-based organic substance which can absorb water.
  • the water vapor barrier polymer material may be a sheet sealant.
  • the package cover 30 is a glass substrate.
  • Step 5 As shown in FIG. 7 , the OLED substrate 20 and the package cover 30 are oppositely bonded.
  • Step 6 curing the sealant 40 to complete the encapsulation of the OLED substrate 20 by the package cover 30.
  • the sealant 40 is cured by ultraviolet light irradiation or heating.
  • the passivation layer is formed into two layers in the process of fabricating the OLED substrate, the first layer is a conventional silicon oxide layer, and the second layer is a silicon oxynitride layer.
  • the silicon oxynitride layer is in direct contact with the sealant, and the adhesion between the sealant and the silicon oxynitride material is strong, thereby improving the adhesion between the sealant and the substrate, thereby improving the sealing performance of the sealant.
  • the present invention further provides an OLED package structure, including an OLED substrate 20 , a package cover 30 disposed opposite to the OLED substrate 20 , and a Between the OLED substrate 20 and the package cover 30 .
  • Frame glue 40
  • the OLED substrate 20 includes a display area and a package area located at a periphery of the display area.
  • the surface layer of the package area of the OLED substrate 20 is a silicon oxynitride layer 72, and the sealant 50 is located in the package of the OLED substrate 20.
  • the sealant 40 is in contact with the silicon oxynitride layer 72, and the adhesiveness of the sealant 40 and the silicon oxynitride layer 72 is enhanced to improve the sealant.
  • the adhesion effect of 50 with the OLED substrate 20 is a silicon oxynitride layer 72.
  • the structure of the OLED substrate 20 in the display region includes a substrate 1, a gate metal layer 2 on the substrate 1, and a gate insulating layer on the gate metal layer 2 and the substrate 1. 3.
  • the structure of the OLED substrate 20 in the package region includes a substrate 1, a gate metal layer 2 on the substrate 1, a gate insulating layer 3 on the gate metal layer 2, and the gate insulating layer.
  • the gate metal layer 2 includes a first gate 21 and a second gate 22 which are disposed at intervals;
  • the semiconductor layer 4 includes a first semiconductor layer 41 and a second semiconductor layer 42 which are disposed at intervals;
  • the source/drain metal layer 6 includes a first source 61, a first drain 62, a second source 63, and a second drain 64.
  • the gate insulating layer 3 is provided with a through hole 31.
  • the first drain electrode 62 is in contact with the first gate electrode 21 through the through hole 31;
  • the first gate 21, the first semiconductor layer 41, the first source 61, and the first drain 62 constitute a switching thin film transistor (Switching TFT); the second gate 22, the second semiconductor layer 42, and the second The source 63 and the second drain 64 constitute a driving thin film transistor (Driving TFT).
  • the silicon oxide layer 71 and the silicon oxynitride layer 72 are provided with a first via 75 corresponding to the second drain 64, and the anode 81 is in contact with the second drain 64 through the first via 75;
  • the pixel defining layer 82 is provided with a second via 83 corresponding to the upper side of the anode 81, and the light emitting layer 85 is in contact with the anode 81 through the second via 83.
  • the thickness of the silicon oxide layer 71 is 1500 to 4000 nm; and the thickness of the silicon oxynitride layer 72 is 0 to 500 nm, preferably 0 to 100 nm.
  • the silicon oxide layer 71 and the silicon oxynitride layer 72 together form a passivation layer.
  • the package cover 30 is a glass substrate.
  • the OLED substrate 20 further includes a sealing film 50 that completely fills an inner space surrounded by the sealant 40 between the OLED substrate 20 and the package cover 30.
  • the material of the sealing film 50 is a polymer material containing a desiccant or a polymer material capable of blocking moisture.
  • the desiccant may be an inorganic substance such as calcium oxide or sodium oxide or a polymer resin-based organic substance which can absorb water.
  • the water vapor barrier polymer material may be a sheet sealant.
  • the material of the pixel defining layer 82 is an organic photoresist.
  • the material of the anode 81 may be a transparent conductive metal oxide such as ITO (indium tin oxide); when the OLED substrate 20 is a top-emitting OLED substrate, the anode 81 may be a laminated structure of Ag/ITO/Ag.
  • the present invention provides an OLED substrate packaging method by making In the process of the OLED substrate, the passivation layer is formed into two layers, the first layer is a conventional silicon oxide layer, and the second layer is a silicon oxynitride layer.
  • the silicon oxynitride layer is in direct contact with the sealant. Since the adhesion between the sealant and the silicon oxynitride material is strong, the adhesion between the sealant and the OLED substrate is improved, and the effect of improving the sealing performance of the sealant is achieved.
  • the OLED package structure provided by the present invention improves the adhesion of the sealant to the OLED substrate by setting the surface layer of the package region of the OLED substrate to a silicon oxynitride layer and utilizing the strong adhesion between the sealant and the silicon oxynitride material. Adhesion, to achieve the effect of improving the sealing performance of the sealant.

Abstract

一种OLED基板（20）的封装方法与OLED封装结构。该OLED基板（20）的封装方法通过在制作OLED基板（20）的过程中，将钝化层分为两层制作，第一层为常规的氧化硅层（71），第二层为氮氧化硅层（72），在封装过程中，该氮氧化硅层（72）与框胶（40）直接接触，由于框胶（40）与氮氧化硅材料的粘附性较强，从而提高框胶（40）与OLED基板（20）的粘附性，达到提高框胶（40）封装效能的效果。该OLED封装结构通过将OLED基板（20）的封装区域的表层设置为氮氧化硅层（72），利用框胶（40）与氮氧化硅材料的粘附性较强的特性，提高框胶（40）与OLED基板（20）的粘附性，达到提高框胶（40）封装效能的效果。

Description

OLED基板的封装方法与OLED封装结构 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED基板的封装方法与OLED封装结构。
背景技术
OLED即有机发光二极管(Organic Light-Emitting Diode)，具备自发光、高亮度、宽视角、高对比度、可挠曲、低能耗等特性，因此受到广泛的关注，并作为新一代的显示方式，已开始逐渐取代传统的液晶显示器(LCD，Liquid Crystal Display)，被广泛应用在手机屏幕、电脑显示器、全彩电视等。但是由于有机材料易与水氧反应，很少量的水蒸气和氧气就能损害有机发光材料，使器件的发光性能劣化。因此，如何减少水蒸气和氧气对器件封装材料的渗透，消除器件内部的水蒸气和氧气，是有机电致发光器件封装技术要解决的重要问题。为了实现OLED显示面板的商业化，与之相关的封装技术成为了研究热点。
目前常用的封装技术有：紫外光(UV)固化框胶、玻璃粉末镭射封装(laser sealing)、面封装(face seal)、框胶及干燥剂填充封装(dam and fill)、薄膜封装等。其中紫外光(UV)固化框胶、框胶及干燥剂填充封装(dam and fill)都会用到有机框胶，并且一些新的封装技术也会结合有机框胶的使用。因此有机框胶封装效果很重要，框胶与基板表面的粘附性是决定封装效果的重要因素，从而使得在OLED基板的制作过程中，框胶涂布区域(即封装区域)的表层材料显得非常重要。
图1为现有的一种OLED基板的结构示意图，所述OLED基板包括显示区域、及位于所述显示区域外围的封装区域，如图1所示，所述OLED基板位于显示区域的结构包括基板100、位于所述基板100上的栅极金属层200、位于所述栅极金属层200与基板100上的栅极绝缘层300、位于所述栅极绝缘层300上的半导体层400、位于所述半导体层400与栅极绝缘层300上的刻蚀阻挡层500、位于所述刻蚀阻挡层500、半导体层400、及栅极绝缘层300上的源漏极金属层600、位于所述源漏极金属层600、刻蚀阻挡层500、及栅极绝缘层300上的钝化层700、位于所述钝化层700上的阳极810、位于所述阳极810、及钝化层700上的像素定义层820、以及位于所述像素定义层820上的发光层850；
所述OLED基板位于封装区域的结构包括基板100、位于所述基板100上的栅极金属层200、位于所述栅极金属层200上的栅极绝缘层300、位于所述栅极绝缘层300上的刻蚀阻挡层500、位于所述刻蚀阻挡层500上的源漏极金属层600、以及位于所述源漏极金属层600上的钝化层700。
从图1中可以看出，该OLED基板的封装区域的表层为钝化层(passivation layer)700，而该钝化层700的材料通常为氧化硅(SiOx)。目前的研究成果表明，一般的有机框胶与氧化硅界面的粘附性较差，从而导致密封效果较差，水汽与氧气比较容易透过间隙渗透入内部密封区域，从而导致OLED器件的性能较快退化，寿命缩短。
发明内容
本发明的目的在于提供一种OLED基板的封装方法，可以提高框胶与OLED基板的粘附性，达到提高框胶封装效能的效果。
本发明的目的还在于提供一种OLED封装结构，框胶与OLED基板的粘附性较好，密封性好，可有效减少渗透到OLED内部的氧气与水汽，从而提高OLED器件的性能，延长OLED器件的使用寿命。
为实现上述目的，本发明提供一种OLED基板的封装方法，包括以下步骤：
步骤1、提供一TFT基板，所述TFT基板包括显示区域、及位于所述显示区域外围的封装区域；
步骤2、在所述TFT基板的显示区域与封装区域上依次形成氧化硅层与氮氧化硅层；
步骤3、在所述TFT基板的显示区域上依次制备阳极、像素定义层、及发光层，得到一OLED基板；
步骤4、提供一封装盖板，在所述封装盖板上对应所述OLED基板的封装区域的表面涂覆框胶；
步骤5、将所述OLED基板与封装盖板相对贴合；
步骤6、对所述框胶进行固化，从而完成所述封装盖板对OLED基板的封装。
所述TFT基板位于显示区域的结构包括基板、位于所述基板上的栅极金属层、位于所述栅极金属层与基板上的栅极绝缘层、位于所述栅极绝缘层上的半导体层、位于所述半导体层与栅极绝缘层上的刻蚀阻挡层、以及位于所述刻蚀阻挡层、半导体层、及栅极绝缘层上的源漏极金属层；
所述TFT基板位于封装区域的结构包括基板、位于所述基板上的栅极 金属层、位于所述栅极金属层上的栅极绝缘层、位于所述栅极绝缘层上的刻蚀阻挡层、以及位于所述刻蚀阻挡层上的源漏极金属层。
所述步骤2中，所述氧化硅层与氮氧化硅层均采用化学气相沉积方法得到，采用化学气相沉积方法形成氧化硅层的反应式为：SiH4+N2O→SiOx；采用化学气相沉积方法形成氮氧化硅层的反应式为：SiH4+N2O+N2→SiOxNy。
所述氧化硅层的厚度为1500～4000nm；所述氮氧化硅层的厚度为0～500nm。
所述步骤4还包括：在所述封装盖板上位于框胶内的区域上形成密封薄膜；所述封装盖板为玻璃基板；所述密封薄膜的材料为含有干燥剂的高分子材料或者可阻挡水汽的高分子材料；所述步骤6中采用紫外光照射或者加热的方法对所述框胶进行固化。
本发明还提供一种OLED封装结构，包括OLED基板、与OLED基板相对设置的封装盖板、以及位于所述OLED基板与封装盖板之间的框胶；
所述OLED基板包括显示区域、及位于所述显示区域外围的封装区域，所述OLED基板的封装区域的表层为氮氧化硅层，所述框胶位于所述OLED基板的封装区域与封装盖板之间，从而使得所述框胶与氮氧化硅层相接触。
所述OLED基板位于显示区域的结构包括基板、位于所述基板上的栅极金属层、位于所述栅极金属层与基板上的栅极绝缘层、位于所述栅极绝缘层上的半导体层、位于所述半导体层与栅极绝缘层上的刻蚀阻挡层、以及位于所述刻蚀阻挡层、半导体层、及栅极绝缘层上的源漏极金属层、位于所述源漏极金属层、刻蚀阻挡层、及栅极绝缘层上的氧化硅层、位于所述氧化硅层上的氮氧化硅层、位于所述氮氧化硅层上的阳极、位于所述阳极、及氮氧化硅层上的像素定义层、以及位于所述像素定义层上的发光层；
所述OLED基板位于封装区域的结构包括基板、位于所述基板上的栅极金属层、位于所述栅极金属层上的栅极绝缘层、位于所述栅极绝缘层上的刻蚀阻挡层、位于所述刻蚀阻挡层上的源漏极金属层、位于所述源漏极金属层上的氧化硅层、以及位于所述氧化硅层上的氮氧化硅层。
所述氧化硅层的厚度为1500～4000nm；所述氮氧化硅层的厚度为0～500nm。
所述OLED基板还包括完全填充所述OLED基板与封装盖板之间由所述框胶围成的内部空间的密封薄膜。
所述封装盖板为玻璃基板；所述密封薄膜的材料为含有干燥剂的高分 子材料或者可阻挡水汽的高分子材料。
本发明还提供一种OLED基板的封装方法，包括以下步骤：
步骤1、提供一TFT基板，所述TFT基板包括显示区域、及位于所述显示区域外围的封装区域；
步骤2、在所述TFT基板的显示区域与封装区域上依次形成氧化硅层与氮氧化硅层；
步骤3、在所述TFT基板的显示区域上依次制备阳极、像素定义层、及发光层，得到一OLED基板；
步骤4、提供一封装盖板，在所述封装盖板上对应所述OLED基板的封装区域的表面涂覆框胶；
步骤5、将所述OLED基板与封装盖板相对贴合；
步骤6、对所述框胶进行固化，从而完成所述封装盖板对OLED基板的封装；
其中，所述TFT基板位于显示区域的结构包括基板、位于所述基板上的栅极金属层、位于所述栅极金属层与基板上的栅极绝缘层、位于所述栅极绝缘层上的半导体层、位于所述半导体层与栅极绝缘层上的刻蚀阻挡层、以及位于所述刻蚀阻挡层、半导体层、及栅极绝缘层上的源漏极金属层；
所述TFT基板位于封装区域的结构包括基板、位于所述基板上的栅极金属层、位于所述栅极金属层上的栅极绝缘层、位于所述栅极绝缘层上的刻蚀阻挡层、以及位于所述刻蚀阻挡层上的源漏极金属层；
其中，所述步骤2中，所述氧化硅层与氮氧化硅层均采用化学气相沉积方法得到，采用化学气相沉积方法形成氧化硅层的反应式为：SiH4+N2O→SiOx；采用化学气相沉积方法形成氮氧化硅层的反应式为：SiH4+N2O+N2→SiOxNy。
本发明的有益效果：本发明提供的一种OLED基板的封装方法，通过在制作OLED基板的过程中，将钝化层分为两层制作，一层为常规的氧化硅层，一层为氮氧化硅层，在封装过程中，该氮氧化硅层与框胶直接接触，由于框胶与氮氧化硅材料的粘附性较强，从而提高框胶与OLED基板的粘附性，达到提高框胶封装效能的效果。本发明提供的一种OLED封装结构，通过将OLED基板的封装区域的表层设置为氮氧化硅层，利用框胶与氮氧化硅材料的粘附性较强的特性，提高框胶与OLED基板的粘附性，达到提高框胶封装效能的效果。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发 明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为现有的一种OLED基板的结构示意图；
图2为本发明的OLED基板的封装方法的流程图；
图3为本发明的OLED基板的封装方法的步骤1提供的TFT基板的结构示意图；
图4为本发明的OLED基板的封装方法的步骤2的示意图；
图5为本发明的OLED基板的封装方法的步骤3制得的OLED基板的结构示意图；
图6为本发明的OLED基板的封装方法的步骤4的示意图；
图7为本发明的OLED基板的封装方法的步骤5-6的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图2，本发明提供一种OLED基板的封装方法，包括以下步骤：
步骤1、如图3所示，提供一TFT基板10，所述TFT基板10包括显示区域、及位于所述显示区域外围的封装区域。
所述TFT基板10位于显示区域的结构包括基板1、位于所述基板1上的栅极金属层2、位于所述栅极金属层2与基板1上的栅极绝缘层3、位于所述栅极绝缘层3上的半导体层4、位于所述半导体层4与栅极绝缘层3上的刻蚀阻挡层5、以及位于所述刻蚀阻挡层5、半导体层4、及栅极绝缘层3上的源漏极金属层6。
所述TFT基板10位于封装区域的结构包括基板1、位于所述基板1上的栅极金属层2、位于所述栅极金属层2上的栅极绝缘层3、位于所述栅极绝缘层3上的刻蚀阻挡层5、以及位于所述刻蚀阻挡层5上的源漏极金属层6。
所述显示区域中，所述栅极金属层2包括间隔设置的第一栅极21与第二栅极22；所述半导体层4包括间隔设置的第一半导体层41与第二半导体层42；所述源漏极金属层6包括间隔设置的第一源极61、第一漏极62、第 二源极63、及第二漏极64；所述栅极绝缘层3上设有通孔31，所述第一漏极62通过该通孔31与第一栅极21相接触；
其中，所述第一栅极21、第一半导体层41、第一源极61、第一漏极62构成开关薄膜晶体管(Switching TFT)；所述第二栅极22、第二半导体层42、第二源极63、第二漏极64构成驱动薄膜晶体管(Driving TFT)。
步骤2、如图4所示，在所述TFT基板10的显示区域与封装区域上依次形成氧化硅(SiOx)层71与氮氧化硅(SiOxNy)层72，所述氧化硅层71与氮氧化硅层72共同构成钝化层。
具体的，所述氧化硅层71与氮氧化硅层72均采用化学气相沉积方法(CVD)得到。
具体的，采用化学气相沉积方法形成氧化硅层71的反应式为：SiH4+N2O→SiOx。
具体的，采用化学气相沉积方法形成氮氧化硅层72的反应式为：SiH4+N2O+N2→SiOxNy。
具体的，所述氧化硅层71的厚度为1500～4000nm。
具体的，所述氮氧化硅层72的厚度为0～500nm，优选为0～100nm。
步骤3、如图5所示，在所述TFT基板10的显示区域上依次制备阳极81、像素定义层82、及发光层85，得到一OLED基板20。
具体的，所述步骤3包括以下步骤：
步骤31、采用一道光刻制程对所述氧化硅层71与氮氧化硅层72进行图形化处理，得到对应于第二漏极64上方的第一过孔75；
步骤32、在所述钝化层70上形成一导电层，采用一道光刻制程对所述导电层进行图形化处理，得到阳极81，所述阳极81通过第一过孔75与第二漏极64相接触；
步骤33、在所述阳极81与钝化层70上形成像素定义层82，采用一道光刻制程对所述像素定义层82进行图形化处理，得到对应于阳极81上方的第二过孔83；
步骤34、在所述像素定义层82上形成发光层85，所述发光层85经由第二过孔83与阳极81相接触。
具体的，所述像素定义层82的材料为有机光阻。
当所述OLED基板20为底发光OLED基板时，所述阳极81的材料可以为ITO(氧化铟锡)等透明导电金属氧化物；当所述OLED基板20为顶发光OLED基板时，所述阳极81可以为Ag/ITO/Ag的叠层结构。
具体的，所述步骤34采用蒸镀或者溶液成膜的方法来制备发光层85。
步骤4、如图6所示，提供一封装盖板30，在所述封装盖板30上对应所述OLED基板20的封装区域的表面涂覆框胶40；在所述封装盖板30上位于框胶40内的区域上形成密封薄膜50。
具体的，所述密封薄膜50的材料为含有干燥剂的高分子材料或者可阻挡水汽的高分子材料。
具体的，所述干燥剂可以为氧化钙，氧化钠等无机物，或者可吸水的高分子树脂类有机物。所述可阻挡水汽的高分子材料可以为片状胶材(sheet sealant)。
具体的，所述封装盖板30为玻璃基板。
步骤5、如图7所示，将所述OLED基板20与封装盖板30相对贴合。
步骤6、对所述框胶40进行固化，从而完成所述封装盖板30对OLED基板20的封装。
具体的，所述步骤6采用紫外光照射或者加热的方法对所述框胶40进行固化。
上述OLED基板的封装方法，通过在制作OLED基板的过程中，将钝化层分为两层制作，第一层为常规的氧化硅层，第二层为氮氧化硅层，在封装过程中，该氮氧化硅层与框胶直接接触，由于框胶与氮氧化硅材料的粘附性较强，从而提高框胶与基板的粘附性，达到提高框胶封装效能的效果。
请参阅图7与图5，本发明还提供一种OLED封装结构，包括OLED基板20、与OLED基板20相对设置的封装盖板30、以及位于所述OLED基板20与封装盖板30之间的框胶40；
所述OLED基板20包括显示区域、及位于所述显示区域外围的封装区域，所述OLED基板20的封装区域的表层为氮氧化硅层72，所述框胶50位于所述OLED基板20的封装区域与封装盖板30的对应区域之间，从而使得所述框胶40与氮氧化硅层72相接触，利用框胶40与氮氧化硅层72的粘附性较强的特性，提高框胶50与OLED基板20的粘附效果。
如图5所示，所述OLED基板20位于显示区域的结构包括基板1、位于所述基板1上的栅极金属层2、位于所述栅极金属层2与基板1上的栅极绝缘层3、位于所述栅极绝缘层3上的半导体层4、位于所述半导体层4与栅极绝缘层3上的刻蚀阻挡层5、以及位于所述刻蚀阻挡层5、半导体层4、及栅极绝缘层3上的源漏极金属层6、位于所述源漏极金属层6、刻蚀阻挡层5、及栅极绝缘层3上的氧化硅层71、位于所述氧化硅层71上的氮氧化硅层72、位于所述氮氧化硅层72上的阳极81、位于所述阳极81、及氮氧 化硅层72上的像素定义层82、以及位于所述像素定义层82上的发光层85。
所述OLED基板20位于封装区域的结构包括基板1、位于所述基板1上的栅极金属层2、位于所述栅极金属层2上的栅极绝缘层3、位于所述栅极绝缘层3上的刻蚀阻挡层5、位于所述刻蚀阻挡层5上的源漏极金属层6、位于所述源漏极金属层6上的氧化硅层71、以及位于所述氧化硅层71上的氮氧化硅层72。
所述显示区域中，所述栅极金属层2包括间隔设置的第一栅极21与第二栅极22；所述半导体层4包括间隔设置的第一半导体层41与第二半导体层42；所述源漏极金属层6包括间隔设置的第一源极61、第一漏极62、第二源极63、及第二漏极64；所述栅极绝缘层3上设有通孔31，所述第一漏极62通过该通孔31与第一栅极21相接触；
所述第一栅极21、第一半导体层41、第一源极61、第一漏极62构成开关薄膜晶体管(Switching TFT)；所述第二栅极22、第二半导体层42、第二源极63、第二漏极64构成驱动薄膜晶体管(Driving TFT)。
所述氧化硅层71与氮氧化硅层72上设有对应于第二漏极64上方的第一过孔75，所述阳极81通过第一过孔75与第二漏极64相接触；所述像素定义层82上设有对应于阳极81上方的第二过孔83，所述发光层85通过第二过孔83与阳极81相接触。
具体的，所述氧化硅层71的厚度为1500～4000nm；所述氮氧化硅层72的厚度为0～500nm，优选为0～100nm。所述氧化硅层71与氮氧化硅层72共同构成钝化层。
具体的，所述封装盖板30为玻璃基板。
具体的，所述OLED基板20还包括完全填充所述OLED基板20与封装盖板30之间由所述框胶40围成的内部空间的密封薄膜50。
具体的，所述密封薄膜50的材料为含有干燥剂的高分子材料或者可阻挡水汽的高分子材料。
具体的，所述干燥剂可以为氧化钙，氧化钠等无机物，或者可吸水的高分子树脂类有机物。所述可阻挡水汽的高分子材料可以为片状胶材(sheet sealant)。
具体的，所述像素定义层82的材料为有机光阻。
当所述OLED基板20为底发光OLED基板时，所述阳极81的材料可以为ITO(氧化铟锡)等透明导电金属氧化物；当所述OLED基板20为顶发光OLED基板时，所述阳极81可以为Ag/ITO/Ag的叠层结构。
综上所述，本发明提供的一种OLED基板的封装方法，通过在制作 OLED基板的过程中，将钝化层分为两层制作，第一层为常规的氧化硅层，第二层为氮氧化硅层，在封装过程中，该氮氧化硅层与框胶直接接触，由于框胶与氮氧化硅材料的粘附性较强，从而提高框胶与OLED基板的粘附性，达到提高框胶封装效能的效果。本发明提供的一种OLED封装结构，通过将OLED基板的封装区域的表层设置为氮氧化硅层，利用框胶与氮氧化硅材料的粘附性较强的特性，提高框胶与OLED基板的粘附性，达到提高框胶封装效能的效果。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (13)

  1. 一种OLED基板的封装方法，包括以下步骤：
    步骤1、提供一TFT基板，所述TFT基板包括显示区域、及位于所述显示区域外围的封装区域；
    步骤2、在所述TFT基板的显示区域与封装区域上依次形成氧化硅层与氮氧化硅层；
    步骤3、在所述TFT基板的显示区域上依次制备阳极、像素定义层、及发光层，得到一OLED基板；
    步骤4、提供一封装盖板，在所述封装盖板上对应所述OLED基板的封装区域的表面涂覆框胶；
    步骤5、将所述OLED基板与封装盖板相对贴合；
    步骤6、对所述框胶进行固化，从而完成所述封装盖板对OLED基板的封装。
  2. 如权利要求1所述的OLED基板的封装方法，其中，所述TFT基板位于显示区域的结构包括基板、位于所述基板上的栅极金属层、位于所述栅极金属层与基板上的栅极绝缘层、位于所述栅极绝缘层上的半导体层、位于所述半导体层与栅极绝缘层上的刻蚀阻挡层、以及位于所述刻蚀阻挡层、半导体层、及栅极绝缘层上的源漏极金属层；
    所述TFT基板位于封装区域的结构包括基板、位于所述基板上的栅极金属层、位于所述栅极金属层上的栅极绝缘层、位于所述栅极绝缘层上的刻蚀阻挡层、以及位于所述刻蚀阻挡层上的源漏极金属层。
  3. 如权利要求1所述的OLED基板的封装方法，其中，所述步骤2中，所述氧化硅层与氮氧化硅层均采用化学气相沉积方法得到，采用化学气相沉积方法形成氧化硅层的反应式为：SiH4+N2O→SiOx；采用化学气相沉积方法形成氮氧化硅层的反应式为：SiH4+N2O+N2→SiOxNy。
  4. 如权利要求1所述的OLED基板的封装方法，其中，所述氧化硅层的厚度为1500～4000nm；所述氮氧化硅层的厚度为0～500nm。
  5. 如权利要求1所述的OLED基板的封装方法，其中，所述步骤4还包括：在所述封装盖板上位于框胶内的区域上形成密封薄膜；所述封装盖板为玻璃基板；所述密封薄膜的材料为含有干燥剂的高分子材料或者可阻挡水汽的高分子材料；所述步骤6中采用紫外光照射或者加热的方法对所述框胶进行固化。
  6. 一种OLED封装结构，包括OLED基板、与OLED基板相对设置的封装盖板、以及位于所述OLED基板与封装盖板之间的框胶；
    所述OLED基板包括显示区域、及位于所述显示区域外围的封装区域，所述OLED基板的封装区域的表层为氮氧化硅层，所述框胶位于所述OLED基板的封装区域与封装盖板之间，从而使得所述框胶与氮氧化硅层相接触。
  7. 如权利要求6所述的OLED封装结构，其中，所述OLED基板位于显示区域的结构包括基板、位于所述基板上的栅极金属层、位于所述栅极金属层与基板上的栅极绝缘层、位于所述栅极绝缘层上的半导体层、位于所述半导体层与栅极绝缘层上的刻蚀阻挡层、以及位于所述刻蚀阻挡层、半导体层、及栅极绝缘层上的源漏极金属层、位于所述源漏极金属层、刻蚀阻挡层、及栅极绝缘层上的氧化硅层、位于所述氧化硅层上的氮氧化硅层、位于所述氮氧化硅层上的阳极、位于所述阳极、及氮氧化硅层上的像素定义层、以及位于所述像素定义层上的发光层；
    所述OLED基板位于封装区域的结构包括基板、位于所述基板上的栅极金属层、位于所述栅极金属层上的栅极绝缘层、位于所述栅极绝缘层上的刻蚀阻挡层、位于所述刻蚀阻挡层上的源漏极金属层、位于所述源漏极金属层上的氧化硅层、以及位于所述氧化硅层上的氮氧化硅层。
  8. 如权利要求7所述的OLED封装结构，其中，所述氧化硅层的厚度为1500～4000nm；所述氮氧化硅层的厚度为0～500nm。
  9. 如权利要求6所述的OLED封装结构，其中，所述OLED基板还包括完全填充所述OLED基板与封装盖板之间由所述框胶围成的内部空间的密封薄膜。
  10. 如权利要求9所述的OLED封装结构，其中，所述封装盖板为玻璃基板；所述密封薄膜的材料为含有干燥剂的高分子材料或者可阻挡水汽的高分子材料。
  11. 一种OLED基板的封装方法，包括以下步骤：
    步骤1、提供一TFT基板，所述TFT基板包括显示区域、及位于所述显示区域外围的封装区域；
    步骤2、在所述TFT基板的显示区域与封装区域上依次形成氧化硅层与氮氧化硅层；
    步骤3、在所述TFT基板的显示区域上依次制备阳极、像素定义层、及发光层，得到一OLED基板；
    步骤4、提供一封装盖板，在所述封装盖板上对应所述OLED基板的封装区域的表面涂覆框胶；
    步骤5、将所述OLED基板与封装盖板相对贴合；
    步骤6、对所述框胶进行固化，从而完成所述封装盖板对OLED基板的封装；
    其中，所述TFT基板位于显示区域的结构包括基板、位于所述基板上的栅极金属层、位于所述栅极金属层与基板上的栅极绝缘层、位于所述栅极绝缘层上的半导体层、位于所述半导体层与栅极绝缘层上的刻蚀阻挡层、以及位于所述刻蚀阻挡层、半导体层、及栅极绝缘层上的源漏极金属层；
    所述TFT基板位于封装区域的结构包括基板、位于所述基板上的栅极金属层、位于所述栅极金属层上的栅极绝缘层、位于所述栅极绝缘层上的刻蚀阻挡层、以及位于所述刻蚀阻挡层上的源漏极金属层；
    其中，所述步骤2中，所述氧化硅层与氮氧化硅层均采用化学气相沉积方法得到，采用化学气相沉积方法形成氧化硅层的反应式为：SiH4+N2O→SiOx；采用化学气相沉积方法形成氮氧化硅层的反应式为：SiH4+N2O+N2→SiOxNy。
  12. 如权利要求11所述的OLED基板的封装方法，其中，所述氧化硅层的厚度为1500～4000nm；所述氮氧化硅层的厚度为0～500nm。
  13. 如权利要求11所述的OLED基板的封装方法，其中，所述步骤4还包括：在所述封装盖板上位于框胶内的区域上形成密封薄膜；所述封装盖板为玻璃基板；所述密封薄膜的材料为含有干燥剂的高分子材料或者可阻挡水汽的高分子材料；所述步骤6中采用紫外光照射或者加热的方法对所述框胶进行固化。
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