WO2016088488A1 - 表示装置基板、表示装置基板の製造方法、及び、これを用いた表示装置 - Google Patents

表示装置基板、表示装置基板の製造方法、及び、これを用いた表示装置 Download PDF

Info

Publication number
WO2016088488A1
WO2016088488A1 PCT/JP2015/080546 JP2015080546W WO2016088488A1 WO 2016088488 A1 WO2016088488 A1 WO 2016088488A1 JP 2015080546 W JP2015080546 W JP 2015080546W WO 2016088488 A1 WO2016088488 A1 WO 2016088488A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
black
display device
wiring
metal oxide
Prior art date
Application number
PCT/JP2015/080546
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
幸弘 木村
福吉　健蔵
Original Assignee
凸版印刷株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 凸版印刷株式会社 filed Critical 凸版印刷株式会社
Priority to KR1020177010547A priority Critical patent/KR101935187B1/ko
Priority to JP2016510337A priority patent/JP6070896B2/ja
Priority to CN201580057277.0A priority patent/CN107077807B/zh
Publication of WO2016088488A1 publication Critical patent/WO2016088488A1/ja

Links

Images

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a display device substrate, a method of manufacturing a display device substrate, and a display device using the same.
  • a configuration in which a touch panel is attached to a display surface side of a display device on a mobile device such as a smartphone or a tablet is becoming common.
  • the touch panel is used as an input means for touching a pointer such as a finger.
  • a method of detecting the pointer of the touch panel is mainly performed as a change in capacitance at the touched portion.
  • the touch panel is an extra member of the display device from the viewpoint of increasing thickness and weight.
  • touch panels are mounted on mobile devices such as smartphones and tablets, but it is still difficult to avoid an increase in the thickness of the devices.
  • the resolution of the display device is increased to provide high-definition pixels, it may be difficult to input on the touch panel.
  • the pixel pitch is about 8 ⁇ m or more and 30 ⁇ m or less, and fine input (for example, pen input) is required. Therefore, it is desired to realize a touch panel that responds to the writing pressure of the input pen and the resolution required for the pen tip, and that can respond to high-speed input and sufficiently achieve high definition.
  • the line width of the black matrix in a touch panel having a high-definition pixel of 300 ppi or even 500 ppi or more is desirably a thin line of about 1 ⁇ m to 6 ⁇ m.
  • in-cell in which a touch sensing function is provided in a liquid crystal cell or a display device without using a touch panel, has been advanced.
  • a touch electrode group is provided on either or both of a display device substrate having a color filter and an array substrate in which an active element such as a thin film transistor (TFT) is provided, and static electricity generated between the touch electrode groups.
  • TFT thin film transistor
  • an organic film-based touch panel has a large base material expansion / contraction (for example, thermal expansion coefficient), and alignment of fine pixels of about 8 ⁇ m to 30 ⁇ m including alignment patterns of red pixels, green pixels, blue pixels, and black matrices (alignment). ) Is difficult and cannot be adopted as a display device substrate.
  • Patent document 1 is disclosing the laminated structure of a transparent conductive film and a light-shielding metal film on a plastic film.
  • this configuration cannot be used as “in-cell” and cannot be used as a high-definition color filter because of the base material being a film.
  • Patent Document 1 does not suggest in-cell technology and integration with a color filter.
  • Patent Document 1 exemplifies aluminum as the light-shielding metal film layer.
  • a photolithography technique using an alkaline developer is used.
  • aluminum metal wiring can be corroded by an alkali developer to form a color filter. Have difficulty.
  • Patent Document 1 discloses a technique that takes into consideration the possibility that light reflection on the surface of a light-shielding metal film is incident on a channel layer of a transistor included in an array substrate when used as a display device, resulting in malfunction of the transistor. Not disclosed.
  • Patent Document 2 discloses a laminated structure of a light absorbing layer and a conductive layer having a low total reflectance and a touch panel provided with this laminated structure.
  • Patent Document 2 does not suggest in-cell technology and integration with a color filter.
  • Patent Document 2 exemplifies aluminum as a material for the conductive pattern (or conductive layer).
  • a photolithography technique using an alkaline developer is used.
  • aluminum metal wiring can be corroded by an alkali developer to form a color filter. Have difficulty.
  • Patent Document 2 also discloses that the metal of the conductive layer is copper (Cu).
  • the metal of the conductive layer is copper (Cu).
  • the base material is made of a glass substrate such as alkali-free glass
  • copper, copper oxide, and copper oxynitride do not have sufficient adhesion to the substrate, and the adhesive strength is sufficient to attach and remove cellophane tape. It is not practical because it easily peels off.
  • Patent Document 2 does not disclose a specific technique for improving adhesion when the conductive layer is made of copper. Also, copper tends to form copper oxides on its surface over time, and its reliability is low in electrical mounting.
  • Patent Document 2 does not disclose a technique for improving contact resistance in consideration of mounting or a pattern forming means for wiring for touch sensing.
  • Patent Document 3 discloses a transparent conductive film made of an oxide of indium (In), tin (Sn), and zinc (Zn).
  • Patent Document 3 discloses a wiring structure for touch sensing for stable and highly reliable electrical connection, for example, a first conductive metal oxide layer and a copper layer or a copper alloy on a transparent substrate.
  • a black wiring having a structure in which a metal layer composed of two layers, a second conductive metal oxide layer, and a black layer mainly composed of carbon are laminated in this order with equal line widths.
  • the technology for forming the wiring for use is not disclosed. That is, the technique disclosed in Patent Document 3 does not consider the stability of electrical mounting necessary for the wiring for touch sensing and the visibility as a display device.
  • Patent Document 4 discloses a means for suppressing deterioration in image quality when liquid crystal driving line sequential scanning is performed.
  • a polysilicon semiconductor is used for an active element (TFT: “Thin” Film “Transistor”) that drives liquid crystal.
  • TFT Thin” Film “Transistor”
  • This technology prevents the decrease in the potential of the scanning signal line, which can be said to be inherent to polysilicon TFTs with a large off-leakage current, by providing a transfer circuit including a latch portion to hold the potential, and also prevents the deterioration in image quality of the liquid crystal display It is.
  • the present invention has been made in view of the above circumstances, and a first object of the present invention is to provide a touch sensing wiring that is highly adhesive to a substrate made of alkali-free glass and has good visibility. It is to provide a display device substrate.
  • a second object of the present invention is to provide a display device that can respond to high-speed and high-speed touch input, a display device substrate used for the display device, and a display device substrate including a color filter.
  • a third object of the present invention is to provide a display device substrate capable of stable electrical mounting.
  • the first aspect of the present invention comprises the following components. That is, a transparent substrate made of non-alkali glass and the transparent substrate are disposed between a plurality of pixels, and are disposed on the first conductive metal oxide layer and the first conductive metal oxide layer.
  • the black wiring extends in a first direction, and a plurality of the black wirings are arranged at a predetermined interval in a second direction substantially orthogonal to the first direction, and the black wiring includes the plurality of pixels.
  • a lead wiring having a terminal portion where the second conductive metal oxide layer is exposed at an end portion extending out of a display area; wherein the metal layer is formed of copper or a copper alloy; Carbon is the main coloring material, and the first and second conductive metal oxidations
  • the layer is formed of a mixed oxide of indium oxide, zinc oxide, and tin oxide, and the first conductive metal oxide layer, the metal layer, the second conductive metal oxide layer, and the black color
  • the layers are provided with a display device substrate having equal line widths.
  • the second aspect of the present invention is characterized by comprising the following embodiments. That is, a display device substrate including black wiring having a plurality of pixels divided into a display region having a plurality of pixels on a transparent substrate made of alkali-free glass and having a terminal portion at an end extending outside the display region. A first conductive metal oxide layer, a metal layer made of a copper layer or a copper alloy layer, and a second conductive metal oxide layer are formed on a transparent substrate made of alkali-free glass.
  • a film forming step a black photosensitive solution containing at least carbon and an alkali-soluble acrylic resin is applied onto the second conductive metal oxide layer, and dried to form a black film;
  • the black film on the transparent substrate is exposed through a halftone mask having a first pattern of wiring and a second pattern of the terminal portion having a light transmittance different from that of the first pattern, and an alkali developer is used.
  • the third aspect of the present invention is characterized by comprising the following embodiments. That is, a transparent substrate made of non-alkali glass and the transparent substrate are disposed between a plurality of pixels, and are disposed on the first conductive metal oxide layer and the first conductive metal oxide layer.
  • the black wiring extends in a first direction, and a plurality of the black wirings are arranged at a predetermined interval in a second direction substantially orthogonal to the first direction, and the black wiring includes the plurality of pixels.
  • a lead wiring having a terminal portion where the second conductive metal oxide layer is exposed at an end portion extending out of a display area; wherein the metal layer is formed of copper or a copper alloy; Carbon is the main coloring material, and the first and second conductive metal oxidations
  • the layer is formed of a mixed oxide of indium oxide, zinc oxide, and tin oxide, and the first conductive metal oxide layer, the metal layer, the second conductive metal oxide layer, and the black color
  • the layer includes a display device substrate having substantially the same line width, an array substrate fixed to face the display device substrate, a liquid crystal layer disposed between the display device substrate and the array substrate,
  • the array substrate includes, in plan view, active elements arranged at positions adjacent to a plurality of pixels and the black lines, and metal lines electrically connected to the active elements. And a touch metal line extending in a direction intersecting with the black line, and a display device provided.
  • the fourth aspect of the present invention is characterized by comprising the following embodiments. That is, a transparent substrate made of non-alkali glass and the transparent substrate are disposed between a plurality of pixels, and are disposed on the first conductive metal oxide layer and the first conductive metal oxide layer.
  • the black wiring extends in a first direction, and a plurality of the black wirings are arranged at a predetermined interval in a second direction substantially orthogonal to the first direction, and the black wiring includes the plurality of pixels.
  • a lead wiring having a terminal portion where the second conductive metal oxide layer is exposed at an end portion extending out of a display area; wherein the metal layer is formed of copper or a copper alloy; Carbon is the main coloring material, and the first and second conductive metal oxidations
  • the layer is formed of a mixed oxide of indium oxide, zinc oxide, and tin oxide, and the first conductive metal oxide layer, the metal layer, the second conductive metal oxide layer, and the black color
  • the layer has a substantially equal line width, and includes a display device substrate in which a transparent resin layer is laminated on the black wiring so as to cover at least the display region, and the display device substrate and the array substrate are opposed to each other.
  • a display device bonded via a liquid crystal layer wherein the display device substrate further includes a plurality of transparent conductive film wirings intersecting with the black wirings in plan view on the transparent resin layer, and the array substrate Provides a display device that includes active elements at positions adjacent to a plurality of pixels and the black wiring in a plan view.
  • substrate which comprises the board
  • FIG. 1 is a partial cross-sectional view of a display device substrate according to an embodiment of the present invention.
  • FIG. 2 is a partial cross-sectional view for explaining another example of the display device substrate of the present embodiment.
  • FIG. 3 is a schematic plan view of a display device substrate according to an embodiment of the present invention, in which pixels such as a red pixel, a green pixel, and a blue pixel are separated from each other and arranged in the long side direction. It is a figure which shows an example of the made black wiring.
  • FIG. 4 is a schematic plan view for explaining an example of the terminal portion of the black wiring in the display device substrate according to the embodiment.
  • FIG. 5 is a partial cross-sectional view of the terminal portion of the black wiring in the display device substrate according to the embodiment.
  • FIG. 6 is a partial cross-sectional view of a display device according to an embodiment of the present invention.
  • FIG. 7 is a plan view of the array substrate shown in FIG. 6 and shows the touch metal wiring and the light shielding pattern position.
  • FIG. 8 is a diagram showing an example of a cross section taken along line C-C ′ of the array substrate shown in FIG. 7.
  • FIG. 9 is a cross-sectional view illustrating the capacitance held between the touch metal wiring of the array substrate shown in FIG. 7 and the black wiring of the display device substrate.
  • FIG. 10 is a diagram illustrating an example of a configuration in which a color filter layer and a transparent resin layer are stacked on a black wiring in a display device substrate according to an embodiment of the present invention.
  • FIG. 10 is a diagram illustrating an example of a configuration in which a color filter layer and a transparent resin layer are stacked on a black wiring in a display device substrate according to an embodiment of the present invention.
  • FIG. 11 is a partial cross section of a display device including the display device substrate shown in FIG.
  • FIG. 12 is a partial cross-sectional view of a display device substrate according to an embodiment of the present invention.
  • FIG. 13 is a partial cross-sectional view of a display device including the display device substrate 100 shown in FIG.
  • FIG. 14 is a plan view of the display device substrate shown in FIG.
  • FIG. 15 is a partial cross-sectional view showing each manufacturing process of the display device substrate according to the embodiment of the present invention.
  • FIG. 16 is a partial cross-sectional view of a display device substrate according to an embodiment of the present invention.
  • FIG. 17 is a partial cross-sectional view of a display device substrate according to an embodiment of the present invention.
  • FIG. 18 is a partial cross-sectional view showing each manufacturing process of the display device substrate according to the embodiment of the present invention.
  • FIG. 19 is a diagram for explaining another example of the display device substrate according to the embodiment of the present invention.
  • 20 is a partial cross-sectional view of a display device according to an embodiment including the display device substrate shown in FIG.
  • FIG. 21 is a diagram for explaining another example of the display device substrate according to the embodiment of the present invention.
  • FIG. 22 is a partial cross-sectional view of a display device according to an embodiment including the display device substrate shown in FIG.
  • each embodiment described below characteristic portions will be described, and for example, description of portions that are not different from the components of a normal display device will be omitted.
  • each embodiment will be described as an example of the display device substrate of the present invention or a liquid crystal display device including the same, but the display device substrate of the present invention is applied to other display devices such as an organic EL display device. Is possible.
  • FIG. 1 is a partial cross-sectional view of a display device substrate according to an embodiment of the present invention.
  • the display device substrate of this embodiment has a transparent substrate 15 and black wiring 6.
  • the black wiring 6 has a first conductive metal oxide layer 1, a metal layer 2, a second conductive metal oxide layer 3, and a black layer 4.
  • a black wiring 6 composed of a first conductive metal oxide layer 1, a metal layer 2, a second conductive metal oxide layer 3, and a black layer 4 is formed on a transparent substrate 15. It is equipped. For example, a plurality of black wirings 6 are arranged in a stripe pattern perpendicular to the paper surface.
  • the first conductive oxide layer 1, the metal layer 2, the second conductive metal oxide layer 3, and the black layer 4 are patterned using a well-known photolithography technique. A method for forming the black wiring 6 will be described later in detail.
  • the conductive metal oxide may be described as a mixed oxide or a composite oxide.
  • FIG. 2 is a partial cross-sectional view for explaining another example of the display device substrate of the present embodiment, and is a partial cross-sectional view of a display device substrate in which a transparent resin layer 9 is further laminated on the display device substrate shown in FIG. is there.
  • the display device substrate 100 shown in FIG. 2 has a transparent resin layer 9 laminated on the black wiring 6.
  • the transparent resin layer 9 can be formed of a thermosetting acrylic resin or the like.
  • the film thickness of the transparent resin layer 9 can be set arbitrarily.
  • the black layer 4 and the transparent resin layer 9 may have a configuration in which a plurality of layers having different optical characteristics such as a refractive index are stacked.
  • the position of the film surface on which the black wiring 6 is formed is upside down with respect to FIG. 1 in relation to the description of a display device described later (for example, shown in FIGS. 6 and 16).
  • the base material of the transparent substrate 15 is non-alkali glass having a small coefficient of thermal expansion. Similar to the transparent substrate 25 used for the array substrate described later, it is desirable to use a glass substrate. For example, an active element such as a transistor called a thin film transistor (TFT) is formed, and a glass substrate used for an organic EL display device or a liquid crystal display device can be applied.
  • TFT thin film transistor
  • the alkali-free glass employed as the base material of the transparent substrates 15 and 25 in this embodiment is a substrate material for a display device, and is typified by an aluminosilicate glass that does not substantially contain an alkali component.
  • Alkali-free glass defines that an alkali metal such as sodium (Na) or potassium (K) or an oxide thereof has a content of 1000 ppm or less as an alkali element and does not substantially contain an alkali component. .
  • the alkali element content is preferably low.
  • a substrate on which a liquid crystal driving transistor is formed is referred to as an array substrate.
  • a transistor may be referred to as a thin film transistor or an active element.
  • the black wiring 6 has a line width of the first conductive metal oxide layer 1, a line width of the metal layer 2, a line width of the second conductive metal oxide layer 3, and carbon as a main coloring material. It is desirable that the line widths of the black layers 4 are approximately equal to each other.
  • the total thickness of the first conductive metal oxide layer (adhesive layer) 1 containing indium, the metal layer 2 made of a copper layer or a copper alloy layer, and the black wiring 6 composed of the black layer 4 is 1 ⁇ m or less. It can be. If the thickness of the black wiring 6 exceeds 2 ⁇ m, the unevenness adversely affects the liquid crystal alignment, so it is desirable that the thickness be 1.5 ⁇ m or less.
  • the technology of the present embodiment is intended for display devices with high-definition pixels of, for example, 300 ppi (pixel per inch) and 500 ppi or more.
  • the line width of the black matrix corresponding to the black wiring 6 needs to be patterned with fine lines in the range of 1 ⁇ m to 6 ⁇ m. For example, if there is a variation of ⁇ 1 ⁇ m or more with respect to the 4 ⁇ m line width of the black wiring on the display device substrate, unevenness in display quality occurs, and the pixel aperture ratio decreases. It cannot be used as a substrate for the device.
  • the first conductive metal oxide layer 1, the metal layer 2, the second conductive metal oxide layer 3, and the black layer 4 constituting the black wiring 6 are positioned in the respective manufacturing steps. It is not realistic to combine them. When the phases are aligned with each other in the manufacturing process, a variation of about ⁇ 1.5 ⁇ m or more may occur. Therefore, it is quite difficult from the viewpoint of fine line formation to align so as to form the same pattern in a plurality of layers (a plurality of steps) so as not to affect the aperture ratio of the pixel of the display device.
  • “equal line width” means that each layer forming the black wiring 6 has a center position of the line width (a center position in a direction substantially orthogonal to the direction in which the wiring extends) and a variation in the line width are ⁇ This means that it falls within the range of 0.4 ⁇ m.
  • “equal line width” means that the cross-sectional shapes of the black layer 4, the conductive oxide layer 3, the metal layer 2, the conductive oxide layer 1, and the black layer 18 are as shown in FIGS. In other words, it is substantially aligned in the vertical direction Z (or thickness direction).
  • the pixel pitch for three colors of red (R), green (G), and blue (B) is around 17 ⁇ m.
  • two layers are formed on a black matrix (light shielding layer) having a line width of 4 ⁇ m.
  • the line width is about 10 ⁇ m.
  • the pixel aperture ratio is about 35% and cannot be used as a display device.
  • the line width of the black matrix is 4 ⁇ 0.4 ⁇ m, the pixel aperture ratio is about 60%.
  • the black wiring 6 is arranged in a stripe shape that is long in the direction Y perpendicular to the paper surface.
  • the black wiring 6 can be formed in various patterns in a shape that does not cause moiré with the black matrix.
  • a plurality of pixel openings are formed in the rectangular display area 19 (shown in FIG. 3) of the display device substrate.
  • the pixel opening may have a stripe shape, but may be a polygon having at least two sides parallel to each other. As a polygon whose two sides are parallel, for example, a rectangle, a hexagon, a V-shape (doglegged dog shape), or the like can be used.
  • the pattern of the black wiring 6 may be an electrically closed shape as a frame shape surrounding at least a part of the periphery of these polygonal pixels. Depending on whether the pattern shape is an electrically closed pattern or a partially opened pattern (providing a portion that is not connected in appearance) in plan view, the electric noise around the display device How to pick up changes. Alternatively, how to pick up electrical noise around the display device varies depending on the pattern shape and area of the black wiring 6.
  • the opening of the pixel can be divided into the black wiring 6 and the metal wiring or touch metal wiring on the array substrate side to obtain a pixel shape in a polygonal shape in plan view.
  • a black matrix (BM) can be provided separately.
  • the opening of the pixel is a polygon having at least two sides parallel to each other, and the black wiring 6 extends in a substantially straight line dividing the pixel in the longitudinal direction of the two sides.
  • the black layer 4 is made of, for example, a colored resin in which a black color material is dispersed. Although sufficient black color and low reflectance cannot be obtained with copper oxide or copper alloy oxide, the reflectance of visible light on the surface of the black wiring 6 according to the present embodiment is suppressed to 7% or less, And since it is the structure which clamps the metal layer 2 mentioned later, high light-shielding property is acquired simultaneously. In addition, by configuring the black wiring 6 with the transparent resin layer 9 having a refractive index of about 1.5, the reflectance at the interface with the transparent resin is 3% or less within the wavelength range of visible light. Low reflection can be achieved.
  • the reflectance at the interface with the transparent resin includes the reflectance at light wavelengths of 430 nm, 540 nm, and 620 nm, and the low reflectance is in the range of 0.1% to 3% in the visible range of 400 nm to 700 nm. Can be rate.
  • the black color material carbon, carbon nanotubes, or a mixture of a plurality of organic pigments can be applied.
  • carbon can be used as a main color material of 51% by mass or more with respect to the total amount of the color material, and an organic pigment such as blue or red can be added to adjust the reflection color.
  • an organic pigment such as blue or red
  • the reproducibility of the black layer 4 can be improved by adjusting the carbon concentration in the photosensitive black coating solution as the starting material (lowering the carbon concentration).
  • the pattern processing can be performed with a fine line of 1 ⁇ m or more and 6 ⁇ m or less as the line width of the black wiring 6.
  • the mass% carbon concentration is in the range of 4 to 50 with respect to the total solid content including the resin, the curing agent, and the pigment.
  • the carbon amount may be a carbon amount exceeding 50% by mass, but if the carbon concentration exceeds 50% by mass with respect to the total solid content, the suitability of the coating film tends to be lowered. Further, when the carbon concentration was 4% by mass or less, a sufficient black color could not be obtained, and the reflection of the underlying metal layer 2 was large and the visibility could be lowered. In the following embodiment, when there is no description of the carbon concentration of the black layer 4, this carbon concentration shall be about 40 mass% with respect to the total solid content.
  • the black layer 4 can give an optical density of 2 or less, for example, in transmission measurement, giving priority to exposure and pattern alignment (alignment) in photolithography, which is a subsequent process.
  • the black layer 4 may be formed using a mixture of a plurality of organic pigments for black color adjustment in addition to carbon.
  • the black layer 4 has a reflectance of 3% or less at the interface between the black layer 4 and the base material. It is desirable to adjust the content and type of the black color material, the resin used, and the film thickness. By optimizing these conditions, the reflectance at the interface with a substrate such as glass having a refractive index of approximately 1.5 can be reduced to 3% or less in the visible light wavelength region.
  • the reflectance of the black layer 4 is desirably 3% or less in consideration of preventing re-reflection of light from the backlight unit and improving the visibility of the observer.
  • the refractive index of the acrylic resin used for the color filter and the liquid crystal material is in the range of about 1.5 to 1.7.
  • an adhesive layer having a refractive index in the range of approximately 1.5 to 1.7, which bonds the cover glass (protective glass) of the display device and the display device, can also be used as the resin.
  • the metal forming the metal layer 2 is copper or a copper alloy.
  • the metal layer 2 if the thickness of the metal layer 2 is 100 nm or more, or 150 nm or more, the metal layer 2 hardly transmits visible light. Therefore, in the display device substrate according to the present embodiment, the black wiring 6 can obtain sufficient light shielding properties if the thickness of the metal layer 2 is, for example, about 100 nm to 300 nm.
  • the metal layer 2 can be a metal layer such as copper or copper alloy having alkali resistance.
  • alkali resistance is required is, for example, the case where there is a development step using an alkali developer in the subsequent step. Specifically, for example, a color filter or a black matrix is formed after the black wiring 6 is formed. Alkali resistance is also necessary when a terminal portion is formed on the black wiring 6 described later.
  • chromium has alkali resistance and can be applied as the metal layer 2 of the black wiring 6.
  • chromium has a large resistance value, and chromium ions generated in the manufacturing process are harmful, so that it is difficult to apply to actual production.
  • Copper or a copper alloy is desirable as the metal layer 2 from the viewpoint of a low resistance value. Copper or copper alloy is desirable as the metal layer 2 because of its good conductivity.
  • the metal layer 2 can contain an alloy element of 3 at% or less as a copper alloy.
  • the alloy element for example, one or more elements can be selected from magnesium, calcium, titanium, molybdenum, indium, tin, zinc, aluminum, beryllium, and nickel. Copper alloying can suppress copper diffusion and improve heat resistance as a copper alloy.
  • the resistance value of the black wiring 6 increases. An increase in the resistance value of the black wiring 6 is not preferable because there is a possibility that a drive voltage waveform rounding or a signal delay related to touch detection may occur.
  • Copper tends to cause migration and is insufficient in terms of reliability, but the reliability can be improved as a copper alloy by adding the above alloy element in an amount of 0.1 at% or more.
  • the content ratio of the alloy element can be 0.1 at% or more and 3 at% or less with respect to copper.
  • the first conductive metal oxide layer 1 is formed of a conductive metal oxide containing indium.
  • the second conductive metal oxide layer 3 is, for example, a mixed oxide (composite oxide) of indium oxide, zinc oxide, and tin oxide.
  • the first conductive metal oxide layer 1 and the second conductive metal oxide layer 3 mainly improve the adhesion between the transparent substrate 15 and the black wiring 6 and the adhesion between the metal layer 2 and the black layer 4. And a function of preventing disconnection when the metal layer 2 is scratched.
  • Copper, copper alloys, or oxides and nitrides thereof are generally poor in adhesion to a transparent substrate such as glass or a black layer 4 which is a dispersion of a black color material. Therefore, when the conductive metal oxide layer is not provided, peeling may occur at the interface between the metal layer 2 and the transparent substrate 15 and the interface between the metal layer 2 and the black layer 4.
  • the display device substrate that does not form the first conductive oxide layer 1 as an underlayer is not defective due to peeling.
  • defects due to electrostatic breakdown may occur in metal wiring, which is not practical. This electrostatic breakdown is a phenomenon in which static electricity is accumulated in the wiring pattern in a post-process such as color filter lamination, bonding to an array substrate, or a cleaning process, and pattern breakage or disconnection occurs due to electrostatic breakdown.
  • copper, copper alloys, or their oxides and nitrides usually have unstable electrical connections and lack reliability.
  • copper oxide or copper sulfide formed over time on a copper surface is close to an insulator and causes a problem in electrical mounting.
  • the metal layer 2 is likely to be scratched due to re-implementation of electrical mounting and troubles during handling. Since the conductive metal oxide containing indium is also a hard ceramic, the conductive metal oxide layer is rarely disconnected even if the metal layer is damaged.
  • the second conductive metal oxide layer 3 has a function of improving the electrical contact failure due to the change with time (formation of copper oxide) of the surface of copper or copper alloy as described above. For example, since the second conductive metal oxide layer 3 formed of a mixed oxide of indium oxide, zinc oxide, and tin oxide is exposed on the surface of the terminal portion 5, the contact resistance of the terminal portion 5 is reduced. It becomes low and becomes suitable for electrical mounting.
  • the resistance value as wiring is lowered by setting the indium oxide in the mixed oxide forming the second conductive metal oxide layer 3 to 0.8 or more in atomic ratio of indium, tin, and zinc. Is possible.
  • the atomic ratio of indium is more preferably 0.9 or more.
  • each of the first conductive metal oxide layer 1 and the second conductive metal oxide layer 3 can be formed as an oxide film that is slightly deficient in oxygen and has light absorption. Furthermore, the amount of zinc oxide and tin oxide in the mixed oxide forming the first conductive metal oxide layer 1 and the second conductive metal oxide layer 3 is 0.01 or more and 0 in terms of the atomic ratio of indium. It is preferably within a range of less than 0.08.
  • the amount of tin in the mixed oxide does not exceed 0.01 by atomic ratio, the low resistance of the conductive metal oxide layer cannot be obtained.
  • the amount of tin in the mixed oxide exceeds 0.08 in atomic ratio, it becomes difficult to etch the conductive metal oxide layer, and as a result, pattern formation of the metal layer 2 becomes difficult in the manufacturing method described later. there is a possibility.
  • the amount of zinc in the mixed oxide is preferably in the range of 0.02 or more and less than 0.2 in terms of the atomic ratio of indium. If the atomic ratio of zinc exceeds 0.2 and the atomic ratio of tin is less than 0.01, pattern formation with “equal line width” as black wiring becomes difficult.
  • the amount of zinc oxide increases, the layer formed of the mixed oxide is selectively etched in the wet etching process, and the line width of the metal layer becomes relatively large.
  • the amount of tin oxide increases, the metal layer is selectively etched in the wet etching process, and the line width of the conductive metal oxide layer becomes relatively large. If the amount of tin oxide is too large, the conductive metal oxide layer will not be etched.
  • the amount of zinc in the mixed oxide is preferably in the range of 0.02 to 0.13 in terms of indium atomic ratio.
  • the atomic ratio represented by In / (In + Zn + Sn) of indium (In), zinc (Zn), and tin (Sn) contained in the mixed oxide is greater than 0.8, and the atomic ratio of Zn / Sn is When the value is larger than 1, it is a condition for reproducing black wiring with “equal line width”.
  • FIG. 3 is a schematic plan view of the display device substrate according to the present embodiment, and the pixels such as the red pixel R, the green pixel G, and the blue pixel B are separated from each other and arranged in the long side direction. It is a figure which shows an example of the performed black wiring.
  • FIG. 3 is a plan view of the rectangular display region 19 when the display device of FIG. 6 to be described later is viewed from the observer direction V.
  • the display device substrate of this embodiment has a configuration that does not include a color filter layer.
  • the symbols R, G, and B shown in FIG. 3 are shown to indicate pixel positions, and the color filter may be omitted.
  • the display device using the display device substrate or the liquid crystal display device according to the present embodiment includes a control unit (not shown) that controls each of the video display and touch sensing.
  • touch sensing is, for example, an array of a plurality of wirings extending in the first direction, and orthogonal to the first direction, which is arranged (insulated) with these wirings at predetermined or constant intervals. It is premised on a capacitance method for determining whether or not a pointer such as a finger is touched by a change in capacitance generated at the intersection of each of the plurality of wirings extending in the second direction.
  • the black wiring 6 and the metal wiring 42 (hereinafter, this metal wiring is used as one electrode used when touch sensing is performed in the rectangular display area 19 and the surrounding area.
  • the arrangement position is called.
  • a region surrounded by the black wiring 6 and the touch metal wiring 42 is a pixel opening region.
  • the black wiring 6 is a wiring extending in the first direction (Y direction)
  • the touch metal wiring 42 orthogonal to the black wiring 6 is a wiring in the second direction (X direction).
  • the black wiring 6 in a plan view, has a plurality of wirings arranged in a second direction (X direction) at regular intervals.
  • the touch metal wiring 42 has a plurality of wirings arranged in the first direction (Y direction) in plan view.
  • the black wirings 6 are disposed so as to extend substantially parallel to each other in the Y direction.
  • the black wiring 6 includes a lead wiring (first wiring) 6 a extending from one end of the rectangular display area 19 to the outside of the other end, and a dummy wiring (second wiring) 6 b extending from one end of the rectangular display area 19 to the other end. And have.
  • two dummy wirings 6b are provided between the routing wirings 6a.
  • the dummy wiring 6b has a floating pattern that is electrically floating.
  • the number of thinning out wiring lines 6a (the number of dummy wirings 6b between the wiring lines 6a) and the ratio of the number of wiring wirings 6a to the number of dummy wirings 6b are appropriately set according to the purpose of use of the display device, etc. Should. Note that the role of the drive electrode for applying the touch sensing drive voltage may be either the black wiring 6 or the touch metal wiring 42, and the roles thereof can be interchanged.
  • the touch metal wiring 42 is arranged orthogonal to the black wiring 6 in plan view.
  • the touch metal wiring 42 is provided on an array substrate, which will be described later, and extends from one end of the rectangular display area 19 to the outside of the other end.
  • the color filter layer is formed so that pixels displaying the same color in the Y direction are arranged and pixels displaying different colors in the X direction are adjacent to each other. Is done.
  • the backlight unit includes LEDs for red light emission, green light emission, and blue light emission, and each time-division light emission and a liquid crystal synchronized with the light emission.
  • Color display can be performed by driving the layers.
  • a time-division backlight unit as shown in FIG. 3, for example, pixels that display the same color in the Y direction are arranged, and pixels that display different colors in the X direction are adjacent to each other. Is done.
  • FIG. 4 is a schematic plan view for explaining an example of the terminal portion of the black wiring in the display device substrate according to the embodiment.
  • FIG. 5 is a partial cross-sectional view taken along line AA ′ of the terminal portion of the black wiring in the display device substrate according to the embodiment.
  • the rectangular display area 19 and a part of the periphery thereof are covered with the transparent resin layer 9.
  • a terminal portion 5 is formed at an end where the black wiring 6 extends outside the rectangular display area 19.
  • the terminal portion 5 has a shape in which the second conductive metal oxide layer 3 is exposed on the surface so that electrical contact and mounting can be taken. Unlike the surface of the copper or copper alloy, the surface of the second conductive metal oxide layer 3 forms a new oxide and does not cause an electrical contact failure. Oxides and sulfides are likely to form over time on the surface of copper and copper alloys.
  • the second conductive metal oxide layer formed of the mixed oxide is stable over time and enables ohmic contact in electrical mounting.
  • the shape of the planar view of the terminal portion 5 is not limited to FIG.
  • the upper portion of the terminal portion 5 is removed in a circular or rectangular shape by means such as dry etching, and the second conductive metal oxide layer 3 on the surface of the terminal portion 5 is removed. May be exposed.
  • This conduction transition is made possible by disposing a conductor selected from an anisotropic conductive film, a minute metal sphere, or a resin sphere covered with a metal film on the seal portion.
  • FIG. 6 is a partial cross-sectional view of a display device according to an embodiment of the present invention. 6 is also a cross-sectional view in the DD ′ direction when the array substrate 35 and the display device substrate 100 of FIG. 7 are bonded together with the liquid crystal layer 30 therebetween.
  • the touch metal wiring 42 is not illustrated exactly, but in FIG. 6, the touch metal wiring 42 is assumed to be behind the paper surface, and the position is indicated by a broken line.
  • illustration of a polarizing plate, a retardation plate, an alignment film, a backlight unit, a gate line and a source line connected to an active element which is a transistor is omitted.
  • the display device of this embodiment includes a display device substrate 100, an array substrate 35, and a liquid crystal layer 30.
  • the display device of this embodiment is, for example, an FFS mode liquid crystal display device.
  • the array substrate 35 includes a transparent substrate 25, insulating layers 21, 22, and 23, a common electrode 32, a pixel electrode 36, and a touch metal wiring 42.
  • the transparent substrate 25 is preferably made of, for example, alkali-free glass having a small coefficient of thermal expansion.
  • the base material of the transparent substrate 25 is, for example, non-alkali glass having a small coefficient of thermal expansion, and it is desirable to use a glass substrate.
  • the alkali-free glass employed as the base material of the transparent substrates 15 and 25 in this embodiment is a substrate material for a display device, and is typified by an aluminosilicate glass that does not substantially contain an alkali component.
  • a common electrode 32 is disposed on the transparent substrate 25 via insulating layers 21 and 22.
  • the common electrodes 32 are arranged in a stripe shape extending in the Y direction and are electrically connected to each other.
  • the common electrode 32 is formed of a transparent conductive material such as ITO or IZO.
  • the pixel electrode 6 is formed of a transparent conductive material such as ITO or IZO, for example.
  • the liquid crystal of the liquid crystal layer 30 is aligned substantially horizontally with the substrate surface of the array substrate 35 and includes liquid crystal molecules.
  • the liquid crystal is driven by a fringe electric field generated between the pixel electrode 36 and the common electrode 32.
  • This liquid crystal driving method is called FFS (fringe field switching) or IPS (in plane switching).
  • the drive voltage for driving the liquid crystal layer 30 forms an electric field in a direction substantially parallel to the substrate surface of the array substrate 35, a so-called lateral electric field.
  • FIG. 7 is a plan view of the array substrate 25 shown in FIG. 6, showing the touch metal wiring 42 and the light shielding pattern position.
  • FIG. 7 is a plan view of the array substrate 35 shown in FIG.
  • FIG. 7 shows the positions of the touch metal wiring 42 and the light shielding pattern 43.
  • the array substrate 35 further includes a light shielding pattern 43 arranged in the same layer as the pixel electrode 36 and the touch metal wiring 42, a source line 40, a gate line 41, and a transistor (active element) 46.
  • the pixel electrode 36 is disposed in each pixel.
  • the pixel electrode 36 includes, for example, a plurality of strip patterns extending in the Y direction.
  • the pixel electrode 36 has a slit provided at a position facing the common electrode 32.
  • the plurality of strip patterns are electrically connected to each other by the light shielding pattern 43.
  • the source line 40 extends between the pixel electrodes 36 in the Y direction.
  • the source line 40 is electrically connected to a drive circuit (not shown).
  • a video signal is applied to the source line 40.
  • the drive circuit is included in the control unit (not shown), and the control unit controls a video signal and a gate signal related to video display, and a drive signal and a touch detection signal related to touch sensing described later.
  • the gate line 41 extends between the pixel electrodes 36 in the X direction.
  • the gate line 41 is electrically connected to a drive circuit (not shown). A gate signal of a transistor to be described later is applied to the gate line 41.
  • the touch metal wiring 42 is disposed on the upper layer of the gate line 41 through the insulating layers 21, 22, and 23.
  • the touch metal wiring 42 is electrically independent from the gate line 41 and the source line 40. That is, the touch metal wiring 42 is disposed so as to extend in the X direction between the pixel electrodes 36.
  • the touch metal wiring is electrically connected to a drive circuit (not shown). When touch sensing is performed, for example, a constant voltage or a predetermined pulse voltage is applied to the touch metal wiring 42.
  • the metal wiring such as the gate line 41 or the source line 40 of the array substrate 35 and the touch metal wiring 42 may be formed of the same metal material and configuration in the same process. In this case, the metal wiring formed in the same process and the touch metal wiring 42 are electrically independent.
  • the black wiring 6 and the touch metal wiring 42 can be used as an alternative to a black matrix frequently used in display devices for the purpose of improving display contrast. Since both can be formed of metal wiring, the light shielding property from a backlight unit (not shown) is high.
  • the light shielding pattern 43 is arranged in each pixel.
  • the light shielding pattern 43 is disposed in the same layer as the touch metal wiring 42 and is formed in the same process.
  • the light shielding pattern 43 may be a metal layer that is stacked in plural, or an antireflection film or a light absorption layer may be further laminated on the light shielding pattern 43.
  • the light shielding pattern 43 is formed on a channel layer 49 of an active element to be described later, and prevents light from entering the channel layer 49. Thus, malfunction of the transistor 46 can be prevented.
  • FIG. 8 is a diagram showing an example of a cross section taken along line CC ′ of the array substrate shown in FIG.
  • FIG. 8 shows a configuration of a transistor 46 including a channel layer 49 formed of an oxide semiconductor (In—Ga—Zn—O-based mixed oxide) as an active element of the display device of this embodiment.
  • the transistor 46 is a thin film transistor.
  • a metal wiring (gate line 41 and source line 40) that is electrically linked to the transistor 46, and a touch that runs parallel to the gate line via a plurality of insulating layers 21, 22, and 23 on the gate line 41.
  • the metal wiring 42 etc. are shown.
  • FIG. 8 does not limit the number of insulating layers included in the array substrate 35.
  • the illustrated transistor 46 has a bottom gate structure, the active element employed in the display device of this embodiment is not limited to the bottom gate transistor.
  • the transistor 46 includes a gate electrode GE, a source electrode SE, a drain electrode DE, and a channel layer 49.
  • the gate electrode GE is formed on the transparent substrate 25.
  • the gate electrode GE is disposed in the same layer as the gate line 41, and is electrically connected to the corresponding gate line 41 (or formed integrally).
  • the gate electrode GE is covered with the insulating layer 21.
  • the source electrode SE is disposed on the channel layer 49 on the insulating layer 21.
  • the source electrode SE is disposed in the same layer as the source line 40 and is electrically connected to (or integrally formed with) the corresponding source line 40.
  • the source electrode SE is covered with the insulating layer 22.
  • the drain electrode DE is disposed on the channel layer 49 on the insulating layer 21.
  • the drain electrode DE is disposed in the same layer as the source line 40 and the source electrode SE, and is electrically connected to the pixel electrode 36 through a contact hole 47 that penetrates the insulating layers 22 and 23.
  • the channel layer 49 is disposed on the insulating layer 21 at a position facing the gate electrode GE.
  • the channel layer 49 can be formed of a silicon-based semiconductor such as polysilicon or an oxide semiconductor.
  • the channel layer 49 is preferably an oxide semiconductor including two or more metal oxides of gallium, indium, zinc, tin, germanium, magnesium, and aluminum, which are called IGZO or the like.
  • IGZO oxide semiconductor
  • Such a transistor 46 has high memory characteristics (leakage current is small), and therefore it is easy to maintain the pixel capacitance after application of the liquid crystal driving voltage. Therefore, the display device can have a configuration in which the storage capacitor line (or the storage capacitor provided for each pixel) is omitted.
  • a transistor (active element) using IGZO with good memory characteristics for the channel layer 49 if a transistor (active element) using IGZO with good memory characteristics for the channel layer 49 is employed, a constant voltage (constant potential) when the transparent electrode pattern is set to a constant voltage (constant potential) is used. It is also possible to omit a storage capacitor (storage capacitor) necessary for voltage driving. Unlike a transistor using a silicon semiconductor, a transistor using IGZO as a channel layer has a very small leakage current. Therefore, for example, a transfer circuit including a latch unit described in Patent Document 4 of the prior art document can be omitted, and a simple A wiring structure can be obtained.
  • a liquid crystal display device using an array substrate including a transistor using an oxide semiconductor such as IGZO as a channel layer has a small leakage current of the transistor, so that the voltage after applying the liquid crystal driving voltage can be maintained and the transmittance can be maintained. it can.
  • the transistor 46 When an oxide semiconductor such as IGZO is used for the channel layer 49, the transistor 46 has high electron mobility, and a driving voltage corresponding to a required video signal is applied to the pixel electrode 36 in a short time, for example, 2 msec (milliseconds) or less. Can do.
  • one frame of double speed driving (when the number of display frames per second is 120 frames) is about 8.3 msec, and for example, 6 msec can be assigned to touch sensing.
  • the liquid crystal drive and the touch electrode drive may not be time-division driven.
  • the driving frequency of the liquid crystal and the driving frequency of the touch metal wiring can be made different.
  • the image refresh for maintaining the transmittance (again, again for maintaining the transmittance (or voltage holding) unlike the polysilicon semiconductor transistor).
  • Video signal writing) is not required. Therefore, a display device using an oxide semiconductor such as IGZO can be driven with low power consumption.
  • the liquid crystal can be driven at a high speed with a high voltage, and is excellent for 3D display capable of 3D display.
  • the thin film transistor 46 using an oxide semiconductor such as IGZO for the channel layer 49 has high memory properties as described above, flicker (display flickering) occurs even when the liquid crystal driving frequency is set to a low frequency of about 0.1 Hz to about 30 Hz. There is merit that is hard to occur.
  • the driving voltage applied to the pixel electrode 36 can be held for a long time.
  • the source line 40 and the gate line 41 (and the storage capacitor line) of the active element are formed of a copper wiring having a wiring resistance smaller than that of the aluminum wiring, and further, the IGZO that can be driven in a short time as the active element is used.
  • a sufficient period for scanning can be provided. That is, by applying an oxide semiconductor such as IGZO to the active element, the driving time of the liquid crystal or the like can be shortened, and a sufficient time can be provided for the time applied to touch sensing in the video signal processing of the entire display screen. This makes it possible to detect a change in the generated capacitance with high accuracy.
  • an oxide semiconductor such as IGZO for the channel layer 49, it is possible to substantially eliminate the influence of coupling noise in dot inversion driving and column inversion driving. This is because an active element using an oxide semiconductor can apply a voltage corresponding to a video signal to the pixel electrode 36 in a very short time (for example, 2 msec), and the pixel voltage after the video signal is applied. This is because the memory property is high and no new noise is generated during the retention period, and the influence on touch sensing can be reduced.
  • the pixel electrode 36 is electrically connected to the drain electrode DE through the contact hole 47.
  • the pixel electrode 36 is disposed in the same layer as the touch metal wiring 42 and the light shielding pattern 43.
  • the pixel electrode 36 and the light shielding pattern 43 are integrally formed. In other words, a part of the pixel electrode 36 located above the channel layer 49 is the light shielding pattern 43.
  • FIG. 9 is a cross-sectional view illustrating the capacitance C ⁇ b> 1 held between the touch metal wiring 42 of the array substrate 35 and the black wiring 6 of the display device substrate 100.
  • the touch metal wiring 42 and the gate line 41 at the overlapping positions are extended in a direction perpendicular to the paper surface (X direction) in FIG. 9 and run parallel to each other.
  • the black wiring 6 is actually located in the back of the drawing and is not shown as a cross-sectional view. However, for the sake of explanation, the black wiring 6 is shown by a broken line and schematically shows that the capacitance C1 is formed.
  • the liquid crystal driving of the common electrode 32 and the touch metal wiring 42 in touch sensing may be time-division driving, or the touch metal wiring 42 is not time-division driven. May be driven at a frequency different from that of the liquid crystal drive.
  • the touch metal wiring 42 can be used as a drive electrode or a detection electrode.
  • the electrostatic capacitance C1 related to touch detection is formed between the black wiring 6 and the touch metal wiring 42 orthogonal to the black wiring 6 in plan view.
  • the proximity or touch position of a pointer such as a finger to the display screen can be detected by the change in the capacitance C1.
  • the black wiring 6 and the touch metal wiring 42 are substantially orthogonal as shown in FIG. However, all the black wirings 6 and the touch metal wirings 42 do not have to be linked with a touch sensor controller (not shown) for driving or detection.
  • the touch sensing controller is included in the control unit (not shown).
  • the black wiring 6 may be provided with a dummy wiring 6b, and the driving or detection of the black wiring 6 and the touch metal wiring 42 is performed every third, every nine, or eighteen. It may be performed by thinning a predetermined number such as every other. When the number of thinning-outs is large, the touch sensing scanning time can be shortened, and high-speed touch detection becomes easy.
  • the black wiring 6 is a conductive wiring having a four-layer structure in which the first conductive metal oxide layer 1, the metal layer 2, the second conductive metal oxide layer 3, and the black layer 4 are laminated. is there.
  • the black wiring 6 can be used as a touch electrode in capacitive touch sensing.
  • the touch electrode is a general term for drive electrodes and detection electrodes used for touch sensing.
  • the drive electrode and the detection electrode may be referred to as drive wiring, detection wiring, black wiring, touch metal wiring, and transparent conductive film wiring, respectively.
  • a plurality of detection electrodes are arranged in a first direction (for example, the direction X) in a plan view, and the plurality of drive electrodes are connected to the second through an insulating layer in the stacking direction (direction Z). It is possible to adopt a configuration in which they are arranged side by side in the direction (for example, the Y direction).
  • an AC pulse signal is applied to the drive electrode at a frequency of 1 KHz to 100 KHz. Normally, a constant output waveform is maintained on the detection electrode by the application of the AC pulse signal.
  • a pointer such as a finger
  • a change appears in the output waveform of the detection electrode at that part, and the presence or absence of a touch is determined.
  • the distance to the display surface of a pointer such as a finger can be measured by the time from the proximity of the pointer to contact (usually several hundred ⁇ sec or more and several msec or less), the number of output pulses counted within that time, and the like.
  • the black wiring 6 can be used as the above-described drive electrode or detection electrode.
  • the touch metal wiring 42 (or transparent conductive film wiring) that is substantially orthogonal to the direction (for example, the Y direction) in which the black wiring 6 extends through an insulating layer such as the transparent resin layer 9 as a touch electrode to be paired with the black wiring 6.
  • the touch metal wiring 42 is a touch electrode that is a pair of the black wiring 6, and is disposed on the array substrate side.
  • the transparent conductive film wiring is a touch electrode that is a pair of the black wiring 6, and is disposed on the display substrate side. In the configuration in which the touch metal wiring 42 (or the transparent conductive film wiring) is provided, these wirings can be used as drive electrodes or detection electrodes.
  • a configuration including a transparent conductive film wiring extending substantially orthogonal to the direction in which the black wiring 6 extends will be specifically described.
  • the black layer 4 is used as a resist pattern, the second conductive metal oxide layer 3 containing indium, the metal layer 2 and the first conductive metal oxide layer 1 are wet-etched together to obtain a pattern of the metal layer 2 having the same line width as the black layer 4.
  • the color filter substrate can be manufactured by a simple process using the black wiring 6 having the same line width or pattern shape between the black layer 4 and the metal layer 2.
  • the line widths of the first conductive metal oxide layer 1, the metal layer 2, the second conductive metal oxide layer 3, and the black layer 4 constituting the black wiring 6 can be made equal by the above process. it can.
  • the black wiring 6 is configured to cover the metal layer 2 with the black layer 4 and has less visible light reflection, the metal layer 2 does not reflect light from the backlight unit of the display device when the liquid crystal display device is formed. . For this reason, it is possible to prevent the backlight light incident from the array substrate 35 side from reentering the channel layer 49 of the transistor 46 and to prevent the malfunction of the transistor 46.
  • the black wiring 6 has low resistance and alkali resistance, is in a state of high adhesion to a substrate that is non-alkali glass, and from a light source of a display device such as a backlight.
  • a display device substrate including a touch sensing wiring that reduces re-reflection of light can be provided. That is, it is possible to provide a display device substrate including a touch sensing wiring that has high adhesion to a substrate that is non-alkali glass and that has good visibility. Further, according to the present embodiment, it is possible to provide a display device that can respond to high-resolution and high-speed touch input, and a display device substrate used therefor. Further, according to the present embodiment, it is possible to provide a display device substrate capable of stable electrical mounting.
  • FIG. 10 is a diagram illustrating an example of a configuration in which a color filter layer and a transparent resin layer 9 are stacked on the black wiring 6 in the display device substrate according to the present embodiment.
  • FIG. 11 is a partial cross section of a display device including the display device substrate shown in FIG. Note that in FIG. 11, illustration of a polarizing plate, a retardation plate, an alignment film, a backlight unit, a gate line, a source line, and the like connected to a transistor which is an active element is omitted.
  • the second embodiment relates to a configuration in which color filter layers (red pixel R, green pixel G, and blue pixel B) are further stacked in the display device substrate of the above-described embodiment, and is related to the liquid crystal layer 30 and the liquid crystal drive.
  • the technology is the same as in the first embodiment.
  • the plan view of the display device of this embodiment viewed from the viewer direction V is the same as FIG.
  • Means for forming the ultra-thin black wiring 6 and the color filter layer (red pixel R, green pixel G, blue pixel B) flat and without gaps are, for example, combined with thermal reflow disclosed in WO14 / 115367. It is possible to apply a colored layer forming technique.
  • the display device substrate 100 further includes color filter layers (red pixels R, green pixels G, and blue pixels B) disposed on the black wiring 6.
  • the color filter layer transmits a red colored layer made of a resin colored so as to transmit red main wavelength light corresponding to the red pixel R, and transmits a green main wavelength light corresponding to the green pixel G.
  • a green colored layer made of a resin colored as described above and a blue colored layer made of a resin colored so as to transmit light having a blue main wavelength corresponding to the blue pixel B are provided.
  • the colored layers such as the red colored layer, the green colored layer, and the blue colored layer that form each of the red pixel R, the green pixel G, and the blue pixel B include, for example, dispersing an organic pigment in a photosensitive transparent resin, It is formed by a photolithography technique.
  • other colors such as a light color layer, a complementary color layer, and a white layer (transparent layer) may be added to the color filter layer.
  • each of the red pixel R, the green pixel G, and the blue pixel B has the same color.
  • a stripe pattern shape in which a plurality of patterns continuous in the Y direction are arranged in the X direction can be obtained.
  • the black wiring 6 and the touch metal wiring 42 (or the gate line 41) can form a grid-like black matrix that is orthogonal in a plan view.
  • the black wiring 6 and the touch metal wiring 42 (or the gate line 41) each have a stripe pattern, so that the alignment (alignment) is performed with high accuracy. Is unnecessary and can contribute to the improvement of the yield of the display device.
  • a transparent resin layer 9 is laminated on the color filter layer.
  • the black wiring 6 is extended in a direction perpendicular to the paper surface (Y direction) and arranged substantially parallel to each other.
  • the touch metal wiring 42 is not illustrated because it is located at the back of the page, but for the sake of explanation, it is indicated by a broken line and schematically shows that the capacitance C2 is formed.
  • the black wiring 6 and the touch metal wiring 42 are driven, and the change of the capacitance C2 generated between them is detected, The distance and contact between the pen or the like and the screen of the display device can be detected.
  • the black wiring 6 arranged in parallel to the Y direction is orthogonal to the touch metal wiring 42.
  • the touch metal wiring 42 is formed on the gate line 41 via the insulating layers 21, 22, and 23, and is electrically independent from the gate line 41 and the source line 40.
  • the black wiring 6 and the touch metal wiring 42 can be used as an alternative to a black matrix frequently used in display devices for the purpose of improving display contrast. Since both can be formed of metal wiring, the light shielding property from a backlight unit (not shown) is high.
  • the black wiring 6 having low resistance and alkali resistance in a state of high adhesion to a substrate made of alkali-free glass, and re-lighting from a light source of a display device such as a backlight.
  • a display device substrate including a touch sensing wiring that reduces reflection can be provided. That is, it is possible to provide a display device substrate including a touch sensing wiring that has high adhesion to a substrate that is non-alkali glass and that has good visibility.
  • a display device that can respond to high-resolution and high-speed touch input, and a display device substrate used therefor. Further, according to the present embodiment, it is possible to provide a display device substrate capable of stable electrical mounting.
  • FIG. 12 is a partial cross-sectional view of a display device substrate 200 according to the third embodiment.
  • FIG. 13 is a partial cross-sectional view of a liquid crystal display device including the display device substrate 200 shown in FIG. Note that in FIG. 13, illustration of a polarizing plate, a retardation plate, an alignment film, a backlight unit, a gate line, a source line, and the like connected to an active element which is a transistor is omitted.
  • the display device substrate 200 includes a color filter layer (red pixel R, green pixel G, and blue pixel B) disposed on the black wiring 6, and a transparent resin layer 9 disposed on the color filter layer. And a transparent conductive film wiring 7 disposed on the transparent resin layer 9.
  • This embodiment is different from the second embodiment in the structure in which the transparent conductive film wiring 7 is formed on the transparent resin layer 9 of the display device substrate 200, and the array substrate 45 is not provided with a common electrode. It is.
  • Each of the black wirings 6 extends in a direction perpendicular to the paper surface (Y direction) as in the first and second embodiments described above, and a plurality of black wirings 6 are stripes arranged in the X direction. It is formed in a pattern.
  • the color filter layer transmits a red colored layer made of a resin colored so as to transmit red main wavelength light corresponding to the red pixel R, and transmits a green main wavelength light corresponding to the green pixel G. And a green colored layer made of resin colored so as to correspond to the blue pixel B, and a blue colored layer made of resin colored so as to transmit light having a blue dominant wavelength.
  • a transparent resin layer 9 is laminated on the color filter layer.
  • the transparent resin layer 9 can be formed of a thermosetting acrylic resin or the like.
  • the film thickness of the transparent resin layer 9 was 1.5 ⁇ m.
  • the film thickness of the transparent resin layer 9 can be arbitrarily set as long as the black wiring 6 and the transparent conductive film wiring 7 are electrically insulated.
  • the black layer 4 and the transparent resin layer 9 may have a configuration in which a plurality of layers having different optical characteristics such as a refractive index are stacked.
  • the black layer 4 and the transparent resin layer 9 may have a multilayer structure.
  • the transparent conductive film wiring 7 is disposed on the transparent resin layer 9.
  • the transparent conductive film wiring 7 is formed of a transparent conductive material such as ITO or IZO, for example.
  • the transparent conductive film wiring 7 may be configured by laminating an auxiliary conductor such as a metal wiring in a form of being in electrical contact therewith.
  • the black wiring 6 and the transparent conductive film wiring 7 are orthogonal to each other through the transparent resin layer 9 that is a dielectric.
  • the pixel pitch in the direction X can be set to 21 ⁇ m
  • the black wiring width can be set to 4 ⁇ m
  • the width of the transparent conductive film wiring 7 can be set to 123 ⁇ m (the pitch of the transparent conductive film wiring 7 is 126 ⁇ m).
  • the capacitance C3 related to touch sensing is formed between the black wiring 6 and the transparent conductive film wiring 7. That is, in the present embodiment, the transparent conductive film wiring 7 is a common electrode and serves as a detection electrode of the touch electrode, and the black wiring 6 can be used as a drive electrode in touch sensing. A substantially constant capacitance C3 is formed between the black wiring 6 and the transparent conductive film wiring 7, but the capacitance C3 at that portion changes due to the contact or proximity of a pointer such as a finger, and the touch position is changed. To detect. The transparent conductive film wiring 7 and the black wiring 6 can perform touch sensing at high speed by thinning out the touch sensing to detect the touch signal.
  • the liquid crystal layer 30 is driven by a voltage between the pixel electrode 36 and the transparent conductive film wiring 7. That is, the transparent conductive film wiring 7 serves as a common electrode for liquid crystal driving. Therefore, in the liquid crystal display device of this embodiment, the liquid crystal driving voltage is applied in the Z direction (the thickness direction of the liquid crystal layer 30). That is, in the liquid crystal display device of this embodiment, the liquid crystal is driven by a so-called vertical electric field.
  • the liquid crystal driving may be liquid crystal driving by common inversion driving, or the pixel electrode 36 may be inversion driven by using the common electrode as a constant potential.
  • the array substrate 45 does not include a common electrode.
  • the pixel electrode 36 is a substantially rectangular electrode disposed in each pixel. Similar to the first embodiment, the pixel electrode 36 is electrically connected to the active element through the contact hole.
  • FIG. 14 is a plan view of the display device substrate 200 shown in FIG.
  • the black wiring 6 has a routing wiring 6a and a dummy wiring 6b, as in the example shown in FIG.
  • the routing wiring 6a extends from one end of the rectangular display area 19 to the outside of the other end.
  • the dummy wiring 6b extends from one end of the rectangular display area 19 to the other end.
  • Two dummy wirings 6b are arranged between the routing wirings 6a.
  • the transparent conductive film wiring 7 is arranged extending in a direction (X direction) substantially orthogonal to the direction (Y direction) in which the black wiring 6 extends, and a plurality of transparent conductive film wirings 7 are formed in a stripe pattern arranged in the Y direction. Is done.
  • the line width (width in the Y direction) of the transparent conductive film wiring 7 is substantially equal to the width of three rows of pixels arranged in the X direction.
  • the transparent conductive film wiring 7 extends from one end of the rectangular display area 19 to the outside of the other end.
  • the black wiring 6 and the transparent conductive film wiring 7 are thinned out as electrodes used for touch sensing control (hereinafter may be abbreviated as touch electrodes or touch wirings).
  • the thinned wiring may have an electrically floating shape (floating pattern).
  • the floating pattern may be switched to a detection electrode or a drive electrode by a switching element to perform high-definition touch sensing.
  • the floating pattern can be switched so as to be electrically connected to the ground (grounded to the housing).
  • a signal wiring of an active element such as a TFT may be temporarily grounded to a ground (such as a housing) when a touch sensing signal is detected.
  • touch wiring that requires time to reset the capacitance C3 detected by touch sensing control that is, touch wiring with a large time constant (product of capacitance and resistance value) in touch sensing, for example, odd and even rows May be alternately used for sensing, and driving with the time constant adjusted may be performed.
  • driving and detection may be performed by grouping a plurality of touch wires.
  • the grouping of a plurality of touch wires may not be line-sequential but may be a collective detection method called a self-detection method for each group.
  • Parallel driving may be performed in units of groups.
  • a difference detection method that takes a difference between detection signals of adjacent and adjacent touch wirings can be employed.
  • the black wiring 6 and the transparent conductive film wiring 7 can be used as detection electrodes or drive electrodes in touch sensing.
  • Either the black wiring 6 or the transparent conductive film wiring 7 may be a detection electrode and the other may be a drive electrode.
  • the transparent conductive film wiring 7 can be set to a constant common potential during touch sensing driving and liquid crystal driving. Alternatively, all the transparent conductive film wirings 7 can be grounded through high resistance. Further, the transparent conductive film wiring 7 having a constant common potential at the time of touch sensing driving and liquid crystal driving can play a role of a shielding film, that is, a part of driving signals for touch sensing driving and liquid crystal driving.
  • the value of the high resistance can be, for example, in the range of several gigaohms to several petaohms. Typically, it can be 1 teraohm or more and 50 teraohms or less.
  • the channel layer 49 of the thin film transistor of the display device is an oxide semiconductor such as IGZO
  • a resistance lower than 1 giga ohm may be used in order to alleviate a state in which the pixel of the display device is likely to be burned.
  • a resistor lower than 1 gigaohm may be used for the purpose of resetting the capacitance C3.
  • the display device using an oxide semiconductor such as IGZO for the channel layer 49 of the active element the above-described various devices in the touch sensing control are possible.
  • the black wiring 6 is thinned out and scanning is performed at a low density, the drive frequency can be lowered, and high-precision sensing and power consumption can be reduced.
  • high-density scanning that reduces the thinning of the black wiring 6 can be used for, for example, fingerprint authentication or input with a touch pen.
  • the constant potential applied to the transparent conductive film wiring 7 at the time of touch sensing driving and liquid crystal driving does not necessarily mean “0 (zero)” volts, but may be an intermediate constant potential with a high or low driving frequency, and may be offset.
  • the drive voltage may be different.
  • the transparent conductive film wiring 7 may be driven at a frequency different from the driving frequency of the pixel electrode 36 that drives the liquid crystal because the transparent conductive film wiring 7 has a constant potential during the touch sensing driving and the liquid crystal driving.
  • the common potential Vcom as a common electrode for driving liquid crystal is an AC rectangular signal that generally includes frame inversion in driving the liquid crystal, and an AC voltage of ⁇ 2.5 V or ⁇ 5 V, for example, is applied for each frame.
  • the AC voltage necessary for such driving is not handled as a constant potential.
  • the voltage fluctuation of the constant potential in the technique of the present embodiment needs to be a constant potential within a certain voltage fluctuation which is at least smaller than the threshold value (Vth) for driving the liquid crystal.
  • the touch sensing drive and the liquid crystal drive can be driven at different frequencies by setting the potential of the transparent conductive film wiring 7 to the same constant potential in both the touch sensing drive and the liquid crystal drive.
  • the constant potential transparent conductive film wiring 7 can serve as a shield for electrically separating the liquid crystal drive signal and the touch sensing drive signal.
  • a large fringe capacity can be obtained, and power consumption can be reduced by lowering the drive voltage in touch sensing while maintaining a high S / N ratio.
  • the driving conditions for touch sensing and the driving conditions (frequency, voltage, etc.) for liquid crystals can be made different.
  • the touch sensing drive frequency can be set to 1 KHz to 100 KHz
  • the liquid crystal drive frequency can be set to 0.1 Hz to 480 Hz.
  • touch sensing drive and liquid crystal drive can be time-shared.
  • the black wiring 6 is used as a drive electrode (scanning electrode)
  • the scanning frequency of capacitance detection can be arbitrarily adjusted according to the required touch input speed.
  • the black wiring 6 can be thinned and scanned.
  • the drive electrode and the detection electrode in touch sensing may be interchanged, and the transparent conductive film wiring 7 may be used as a drive electrode (scanning electrode) that applies a voltage at a constant frequency.
  • the voltage (AC signal) applied to the drive electrode in touch sensing or liquid crystal drive may be an inversion drive method in which positive and negative voltages are inverted. Touch sensing driving and liquid crystal driving may be performed in a time division manner, and may not be in a time division manner.
  • the influence on the liquid crystal display can be reduced by reducing the voltage width (amplitude) of the AC signal to be applied.
  • the driving frequency of the black electrode as the touch electrode and the signal detection timing are set to drive the liquid crystal. It can be set without depending on frequency and timing.
  • the drive frequency of the touch electrode can be a frequency different from the liquid crystal drive frequency or a higher drive frequency.
  • the liquid crystal driving frequency is 60 Hz or a driving frequency that is an integral multiple of 60 Hz.
  • the touch sensing part is affected by noise associated with the liquid crystal driving frequency.
  • a normal household power supply is an AC power supply of 50 Hz or 60 Hz, and the touch sensing part easily picks up noise from an electric device that operates with such an external power supply. Therefore, the influence of noise from liquid crystal driving or external electronic equipment can be greatly reduced by setting the frequency of touch driving to a different frequency slightly shifted from 50 Hz or 60 Hz or an integer multiple of these frequencies.
  • the shift amount may be a slight amount, for example, a shift amount of ⁇ 3% or more and ⁇ 17% or less from the noise frequency, and interference with the noise frequency can be reduced.
  • a different frequency that does not interfere with the liquid crystal driving frequency or the power supply frequency can be selected from the range of 1 Hz to 100 kHz for the touch driving frequency.
  • the influence of noise such as coupling noise in dot inversion driving can be reduced.
  • the liquid crystal drive frequency requires high-speed drive such as 240 Hz or 480 Hz and many video signals.
  • the touch drive frequency can be different from the liquid crystal drive frequency is increased.
  • this embodiment enables high-speed and high-precision touch sensing in a 3D display game machine. This embodiment is particularly useful for a display with a high touch input frequency such as a finger such as a game machine or a cash dispenser.
  • the power consumption in the touch sensing can be reduced by thinning out the touch position detection instead of supplying the drive voltage to all the black wirings (drive electrodes) 6.
  • An oxide semiconductor or a polysilicon semiconductor can be used for a channel layer of a transistor of an active element (TFT) (not shown), and the oxide semiconductor can be a metal oxide called IGZO or the like.
  • the channel layer an oxide semiconductor containing two or more metal oxides of gallium, indium, zinc, tin, germanium, magnesium, aluminum such as IGZO
  • the effect of coupling noise in dot inversion drive is almost Can be resolved.
  • an active element using an oxide semiconductor such as IGZO can process a rectangular signal driven by a liquid crystal, which is a video signal, in an extremely short time (for example, 2 msec), and a voltage at a pixel of a liquid crystal display after the application of the video signal. This is because there is no memory generated during the holding period, and the influence of noise in driving the liquid crystal can be further reduced.
  • an oxide semiconductor such as IGZO has a high electrical withstand voltage
  • the liquid crystal can be driven at a high speed with a high voltage, and is effective for 3D image display such as 3D.
  • a transistor using an oxide semiconductor such as IGZO for the channel layer has high memory properties, and thus has an advantage that flicker (display flicker) hardly occurs even when the liquid crystal driving frequency is set to a low frequency of about 0.1 Hz to 30 Hz.
  • an array substrate including a transistor whose channel layer is an oxide semiconductor such as IGZO can be applied to a liquid crystal display device with a horizontal electric field such as FFS, a liquid crystal display device with a vertical electric field such as VA, or an organic EL display device.
  • liquid crystal drive is dot inversion drive or column inversion drive with pixel electrodes, using IGZO with good memory properties, it is necessary for constant voltage drive with the transparent electrode pattern as a constant voltage (constant potential) It is also possible to omit a large storage capacitor (storage capacitor).
  • the liquid crystal driving may be dot inversion driving or column inversion driving (source inversion driving) in which the transparent conductive film wiring 7 that is a common electrode has a constant potential.
  • source inversion driving source inversion driving
  • column inversion driving using the transparent conductive film wiring 7 as a constant potential and dot inversion driving using the transparent conductive film wiring 7 as a constant potential may be combined.
  • the liquid crystal layer 30 is applied to the liquid crystal layer 30 by applying a liquid crystal driving voltage between the transparent conductive film wiring 7 as a common electrode and the pixel electrode 36 provided on the array substrate.
  • a liquid crystal driving voltage between the transparent conductive film wiring 7 as a common electrode and the pixel electrode 36 provided on the array substrate.
  • a voltage is applied in the thickness direction (vertical direction) Z of the liquid crystal layer 30 and the transparent substrates 15 and 25, and a liquid crystal driving method called a vertical electric field method is applied in this embodiment.
  • Liquid crystal driving methods applicable to the vertical electric field method include VA (Vertical Alignment), HAN (Hybrid-aligned Nematic), TN (Twisted Nematic), OCB (Optically Compensated Bend), CPA (Continuous Pinwheel Alignment), ECB (Electrically Controlled Birefringence), TBA (Transverse Bent Alignment) and the like can be mentioned, and these can be appropriately selected and used. Since the VA mode is excellent in normally black display, it is preferable to adopt the VA mode in order to make use of the black display.
  • the vertically aligned liquid crystal (VA) is superior to the horizontally aligned liquid crystal (FFS) in terms of front luminance and black level for black display.
  • FIG. 15 is a partial cross-sectional view showing each manufacturing process of the display device substrate according to the embodiment of the present invention.
  • a first conductive metal oxide layer which is a ternary mixed oxide film (conductive complex oxide layer) containing indium oxide, zinc oxide and tin oxide on a transparent substrate 15. 1, the metal layer 2, and the second conductive oxide layer 3 are continuously formed into the structure shown in a (film formation step).
  • a ternary mixed oxide film conductive complex oxide layer
  • the first conductive metal oxide layer 1, the metal layer 2, and the second conductive oxide layer 3 are formed so as to almost cover the surface of the transparent substrate 15.
  • the film forming apparatus uses a sputtering apparatus and continuously forms films without breaking the vacuum.
  • the composition of the metal layers of indium oxide, zinc oxide, tin oxide, and copper alloy in the first conductive metal oxide layer 1 and the second conductive metal oxide layer 3 was as follows. All are atomic percentages of metal elements in the mixed oxide (counting only of metal elements not counting oxygen elements; hereinafter expressed as at%).
  • Second conductive metal oxide layer; In: Zn: Sn > 91: 7: 2 ⁇
  • Metal layer: Cu: Mg > 99.5: 0.5
  • the amount of indium (In) contained in the first conductive metal oxide layer 1 and the second conductive metal oxide layer 3 needs to be greater than 80 at%.
  • the amount of indium (In) is preferably greater than 80 at%.
  • the amount of indium (In) is more preferably greater than 90 at%.
  • the amount of indium (In) is preferably greater than 90 at%.
  • the amount of indium (In) is less than 80 at%, the specific resistance of the conductive metal oxide layer to be formed is not preferable. If the amount of zinc (Zn) exceeds 20 at%, the alkali resistance of the conductive metal oxide (mixed oxide) decreases, which is not preferable.
  • the amount of zinc (Zn) contained in the first conductive metal oxide layer 1 and the second conductive metal oxide layer 3 needs to be larger than the amount of tin (Sn). If the tin content exceeds the zinc content, there will be problems with wet etching in the subsequent process. In other words, the etching of the metal layer made of copper or copper alloy is easier to enter than the conductive metal oxide layer, and the first conductive metal oxide layer 1, the metal layer 2, and the second conductive metal oxide layer. A difference in line width from 3 tends to occur.
  • the amount of tin (Sn) contained in the first conductive metal oxide layer 1 and the second conductive metal oxide layer 3 is preferably in the range of 0.5 at% or more and 6 at% or less. Tin is contained in an amount of 0.5 at% or more and 6 at% or less in comparison with the indium element, so that the ratio of the ternary mixed oxide film (conductive composite oxide layer) of indium, zinc and tin is increased. Resistance can be reduced. When the amount of tin exceeds 7 at%, the specific resistance of the ternary mixed oxide film (conductive composite oxide layer) becomes too large due to the addition of zinc.
  • the specific resistance is approximately a small range of 5 ⁇ 10 ⁇ 4 ⁇ cm or more and 3 ⁇ 10 ⁇ 4 ⁇ cm or less as the specific resistance of the single layer film of the mixed oxide film. Can fit inside. A small amount of other elements such as titanium, zirconium, magnesium, aluminum, and germanium can be added to the mixed oxide.
  • a black coating solution having alkali developability and photosensitivity containing carbon as a main coloring material is applied on the transparent substrate 15 and dried to form a black layer 4 having a configuration shown in b (Coating Process).
  • the coating thickness after drying of the black layer 4 was about 1.1 ⁇ m.
  • a substrate having the configuration shown in b is formed.
  • Exposure Note that the substrate of the mask is an artificial quartz substrate, and the transmittance is a transmittance with the artificial quartz substrate as a reference.
  • alkali development was performed to obtain a configuration shown in c (pattern formation step). That is, the substrate has a black wiring pattern 4a having a thickness of about 2 ⁇ m and a terminal pattern 4b having a thickness of about 1 ⁇ m. In this state, the second conductive metal oxide layer 3 is exposed between the black wiring patterns 4a and around the substrate.
  • the exposed second conductive metal oxide layer 3 is wet etched with an oxalic acid etchant, the metal layer 2 is wet etched with a phosphoric acid etchant, and the first conductive metal oxide is further etched with an oxalic acid etchant.
  • Layer 1 was wet-etched to obtain a substrate having the structure shown in d (wet-etching step). In this state, the first conductive metal oxide layer 1, the metal layer 2, and the second conductive metal oxide layer 3 between the black wiring patterns 4a are removed, and the transparent substrate 15 is exposed in this region.
  • the thickness of the black layer is 0.6 ⁇ m.
  • the gas introduced into the dry etching apparatus was 8 vol% oxygen added to an argon base gas.
  • the terminal part pattern 4b on the terminal part 5 is completely removed, the second conductive metal oxide layer 3 is exposed on the terminal part 5, and about 0.5 ⁇ m on the black wiring pattern. It was set as the board
  • the line width of the black wiring pattern 4a is about 4 ⁇ m, and the line widths of the first conductive metal oxide layer 1, the metal layer, and the second conductive oxide layer are equal to each other within ⁇ 0.2 ⁇ m. It was.
  • alignment (positioning) of the black layer 4, the first conductive metal oxide layer 1, the metal layer 2, and the second conductive oxide layer 3 is unnecessary. Therefore, it is not necessary to consider each ⁇ 1.5 ⁇ m alignment margin normally required for a display device substrate or the like. Therefore, a high aperture ratio can be obtained.
  • the thickness of the first conductive metal oxide layer 1 of the black wiring 6 is about 0.025 ⁇ m
  • the thickness of the metal layer 2 is about 0.15 ⁇ m
  • the first conductive metal oxide layer is about 0.025 ⁇ m
  • various film thicknesses including the film thickness of the black layer 4 can be set.
  • the color material used for the black layer 4 constituting the black wiring 6 is preferably mainly carbon.
  • a small amount of an organic pigment may be added to the photosensitive black coating solution.
  • a metal is coordinated in the pigment structure. When a film containing such an organic pigment is dry-etched, contamination due to the metal may occur. Considering this point, the composition of the photosensitive black coating solution is adjusted.
  • the process using the photomask is only required once, and there are advantages in reducing the mask cost and reducing the process.
  • FIG. 16 is a partial cross-sectional view of a display device substrate according to the fourth embodiment.
  • the black oxide layer 8 is inserted at the interface between the conductive metal oxide layer 1 and the metal layer 2 of the display device substrate 100 of the first embodiment described above.
  • the display device substrate of this embodiment can be provided as a modification of the above-described plurality of embodiments.
  • the display device substrate of this embodiment includes a black oxide layer 8 obtained by oxidizing a metal at the interface between the first conductive metal oxide layer 1 and the metal layer 2.
  • the black oxide layer 8 is formed of a metal oxide that can absorb even part of visible light.
  • the metal oxide constituting the black oxide layer 8 can be selected from metal oxides having various light absorption properties, but it is convenient to use an oxide of copper or a copper alloy used for the metal layer.
  • the black oxide layer 8 obtained by oxidizing this metal can be easily formed by introducing oxygen gas during vacuum film formation such as sputtering or ion plating.
  • the metal used for the material of the black oxide layer 8 may be a metal material that can impart a light absorption function by oxidizing a copper nickel alloy, a titanium alloy, or the like.
  • the film thickness of the black oxide layer 8 may be, for example, not less than 10 nm and not more than 200 nm.
  • the first conductive metal oxide layer has a thickness of 20 nm
  • the metal layer 2 is a copper magnesium alloy containing magnesium (Mg) 0.5 at%, and has a thickness of 150 nm.
  • the conductive metal oxide layer is formed of a thin film having a thickness of 20 nm.
  • the first and second conductive metal oxide layers can be easily wet-etched by forming an amorphous film by sputtering at room temperature.
  • the metal layer 2 may be formed of pure copper instead of a copper alloy.
  • the black oxide layer 8 In the case where the black oxide layer 8 is used as the metal layer, means for introducing an oxygen gas into a metal oxide film at the time of film formation by sputtering of copper or copper alloy is simple in the manufacturing process.
  • a copper alloy sputtering target is used, and oxygen gas is further added to argon gas.
  • the black oxide layer 8 is formed with a film thickness of 20 nm or more and 200 nm or less.
  • the introduction of only oxygen gas is stopped, and the metal layer 2 is formed with a copper alloy using only argon gas.
  • the second conductive metal oxide layer 3 was subsequently formed using an ITZO (In—Sn—Zn—O) target in the same manner as the first conductive metal oxide layer 1.
  • ITZO In—Sn—Zn—O
  • the first conductive metal oxide layer 1 / black oxide layer 8 / metal layer 2 / second conductive metal oxide layer 3 can be formed in this order.
  • the display device substrate of this embodiment can be formed.
  • the display device shown in FIG. 6 when viewed from the viewer direction V, there is light reflection from the metal layer 2 (reflection of outside light such as room light and sunlight), which may reduce visibility. .
  • the light reflection can be suppressed by inserting the black oxide layer 8 into the interface between the first conductive metal oxide layer 1 and the metal layer 2.
  • the display device substrate, the display device, and the method for manufacturing the display device substrate of the present embodiment it is possible to obtain the same effect as that of the above-described embodiment, and to avoid further deterioration in visibility. It becomes possible.
  • FIG. 17 is a partial cross-sectional view of a display device substrate according to the fifth embodiment.
  • a second black layer 18 is disposed between the transparent substrate 15 of the display device substrate and the first conductive metal oxide layer 1 shown in FIG.
  • the display device substrate of this embodiment can be provided as a modification of the above-described plurality of embodiments.
  • the same color material and transparent resin as those of the black layer 4 can be used.
  • the reflectance of the interface between the transparent substrate 15 and the second black layer 18 can be suppressed to 3% or less in the visible light range by adjusting the amount of the coloring material and the film thickness.
  • the difference between the manufacturing method of the present embodiment and the above-described fourth embodiment is that the application of the second black layer 18 and its hardening process are added as the first process, and the main process is the fourth process.
  • the form is the same.
  • FIG. 18 is a partial cross-sectional view showing each manufacturing process of the display device substrate according to the embodiment of the present invention.
  • the second black layer 18 is applied and hardened on the transparent substrate 15.
  • light may be used in combination.
  • the material of the second black layer 18 may be the same material as that of the black layer 4 of the first embodiment.
  • the thickness of the second black layer 18 is about 0.5 ⁇ m.
  • Steps shown from a to c in FIG. 18 are the same as the manufacturing method of the display device of the first to third embodiments described above.
  • the film thickness of the black wiring pattern 4a shown in FIG. 18d is 1.1 ⁇ m
  • the film thickness of the terminal part pattern 4b corresponding to the terminal part 5 of the 40% transmittance part of the halftone mask is 0.5 ⁇ m.
  • the film thickness of the second black layer 18 exposed between the black wiring patterns 4a shown in d of FIG. 18 is 0.5 ⁇ m.
  • the transparent substrate 15 and the first conductive metal oxide layer 1 when viewed from the observer direction V, the transparent substrate Since the reflectance of light at the interface between the first black layer 15 and the second black layer 18 can be 3% or less, it can be said that the structure is excellent from the viewpoint of visibility.
  • the display device substrate, the display device, and the method for manufacturing the display device substrate of the present embodiment it is possible to obtain the same effect as that of the above-described embodiment, and to avoid further deterioration in visibility. It becomes possible.
  • FIG. 19 is a diagram for explaining a display device substrate according to the sixth embodiment.
  • the black wiring 6 and the red pixel R, the green pixel G, and the blue pixel B of the color filter layer are arranged on different surfaces. It is a fragmentary sectional view of the provided display apparatus board
  • the display device substrate 100 includes a transparent substrate 15, a black wiring 6, a black matrix BM, a color filter layer (red pixel R, green pixel G, blue pixel B), and a transparent resin layer 9.
  • a transparent substrate 15 includes a black wiring 6, a black matrix BM, a color filter layer (red pixel R, green pixel G, blue pixel B), and a transparent resin layer 9.
  • a cover glass for reinforcing the strength via an adhesive or the like on the surface of the display device substrate (on the deflection plate in the liquid crystal display device), or A structure in which a polarizing plate is bonded can be applied.
  • the black wiring 6 and the color filter layer are disposed on different layers of the transparent substrate 15. That is, the transparent substrate 15 has a pair of opposing main surfaces, the black wiring 6 is disposed on one main surface, and the color filter layer is disposed on the other main surface. In this embodiment, the color filter layer is located on the liquid crystal layer side, and the black wiring 6 is disposed at a position where the black layer 4 can be viewed from the observer direction V via the transparent substrate 15.
  • the surface of the black layer 4 is covered with, for example, a polarizing plate (not shown) via an adhesive.
  • a polarizing plate (not shown)
  • the surface reflection of the black layer 4 itself is approximately half the reflectance.
  • the refractive index of the adhesive is approximately 1.5.
  • the reflectivity at the interface between the black layer 4 and the adhesive is a low reflectivity of 3% or less in the visible wavelength range of 400 nm to 700 nm.
  • the reflectance is measured using a microspectrometer, and the reference is an aluminum plate.
  • the black matrix BM is arranged in a lattice pattern on the transparent substrate 15. A portion of the black matrix BM extending in the Y direction faces the black wiring 6 with the transparent substrate 15 interposed therebetween.
  • the other configuration of the display device substrate of the present embodiment is the same as that of the display device substrate of the first embodiment.
  • the configurations of the array substrate 35 and the liquid crystal layer 30 are the same as those of the display device of the first embodiment except for the configuration of the touch metal wiring 37.
  • the touch metal wiring 37 can be formed at the same time in the same metal wiring manufacturing process as the gate electrode or source electrode (or drain electrode) of a transistor (active element) not shown.
  • the alignment of the liquid crystal layer 30 is controlled by an electric field generated by a voltage applied to the pixel electrode 36 and the common electrode 32 provided on the array substrate 35.
  • the liquid crystal drive is the same FFS system as in the first embodiment, and the liquid crystal layer 30 is aligned parallel to the surface of the array substrate 35.
  • the capacitance C4 for touch sensing is formed between the black wiring 6 and the touch metal wiring 37 provided on the array substrate 35.
  • the transistor When the transistor has a top gate structure, it may be formed at the same time as the touch metal wiring 37 in a metal layer that forms a light shielding layer that covers the channel layer of the transistor.
  • An oxide semiconductor or a polysilicon semiconductor can be used for the channel layer of the active element (not shown).
  • the black wiring 6 and the touch metal wiring 37 may be used by switching the roles of the detection electrode and the driving electrode in the touch sensing drive.
  • the method for forming the black wiring 6 on the transparent substrate 15 is the same as that in the first to third embodiments, and the description thereof is omitted. According to the display device substrate, the display device, and the display device substrate manufacturing method of the present embodiment, the same effects as those of the above-described embodiment can be obtained.
  • FIG. 21 is a diagram for explaining a display device substrate according to the seventh embodiment, in which the black wiring 6 and the red pixel R, green pixel G, and blue pixel B of the color filter layer are arranged on different surfaces. It is a fragmentary sectional view of the provided display apparatus board
  • the display device substrate 200 of the present embodiment has the same configuration as the display device substrate 100 shown in FIG. 19 except that the display device substrate 200 further includes a transparent conductive film wiring 7 disposed on the transparent resin layer 9.
  • FIG. 22 is a partial cross-sectional view of a display device according to an embodiment including the display device substrate shown in FIG. Note that in FIG. 22, notation of a polarizing plate, a retardation plate, an alignment film, a backlight unit, a gate line and a source line connected to an active element which is a transistor is omitted.
  • the array substrate 45 and the liquid crystal layer 30 of the display device of this embodiment have the same configuration as the array substrate 45 of the display device of the second embodiment shown in FIG. That is, the liquid crystal layer 30 is driven by a voltage applied between the pixel electrode 36 and the transparent conductive film wiring 7 that is a common electrode.
  • the liquid crystal driving voltage applied between the pixel electrode 36 and the transparent conductive film wiring 7 is a so-called vertical electric field applied in the Z direction (thickness direction of the liquid crystal layer 30).
  • the transparent conductive film wiring 7 is formed of a transparent conductive film called ITO.
  • the electrostatic capacitance C5 related to touch sensing is formed between the black wiring 6 and the transparent conductive film wiring 7, for example.
  • the black wirings 6 are arranged in a stripe pattern shape in the Y direction perpendicular to the paper surface.
  • the plan view of the display device substrate 200 viewed from the observer direction V is the same as that in FIG.
  • An oxide semiconductor or a polysilicon semiconductor can be used for the channel layer of the active element (not shown).
  • the display device substrate, the display device, and the display device substrate manufacturing method of the present embodiment the same effects as those of the above-described embodiment can be obtained. That is, according to the above-described embodiments, low-resistance and alkali-resistant black wiring that has high adhesion to a non-alkali glass substrate and light from a light source of a display device such as a backlight. It is possible to provide a display device substrate including a touch sensing wiring that reduces re-reflection.
  • a display device capable of responding to high-speed and high-speed touch input, a display device substrate used for the display device, and a display device substrate including a color filter. Moreover, according to the above-described plurality of embodiments, a display device substrate capable of stable electrical mounting can be provided.
  • the display device substrate, the display device, and the display device substrate manufacturing method according to the above-described embodiments can be applied with various modifications within the scope of the invention.
  • the display devices according to the above-described plurality of embodiments can be applied in various ways.
  • electronic devices that can be targeted by the display devices of the above-described embodiments mobile phones, portable game devices, personal digital assistants, personal computers, electronic books, video cameras, digital still cameras, head mounted displays, navigation systems, acoustics Examples include playback devices (car audio, digital audio player, etc.), copiers, facsimiles, printers, printer multifunction devices, vending machines, automatic teller machines (ATMs), personal authentication devices, optical communication devices, and the like.
  • ATMs automatic teller machines
  • the present invention is not limited to the above-described embodiment as it is, and can be embodied by modifying the constituent elements without departing from the scope of the invention in the implementation stage.
  • various inventions can be formed by appropriately combining a plurality of constituent elements disclosed in the embodiment. For example, some components may be deleted from all the components shown in the embodiment. Furthermore, you may combine suitably the component covering different embodiment.
  • Touch metal wiring 40 ... source line, 41 ... gate line, 43 ... light shielding pattern, SE ... source electrode, DE ... drain electrode, GE ... gate electrode, 49 ... channel layer, 46 ... transistor (active element), 47 ... contact Hall, 100, 200 ... display device substrate C1 ⁇ C5 ... capacitance

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Human Computer Interaction (AREA)
  • Manufacturing & Machinery (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Optical Filters (AREA)
PCT/JP2015/080546 2014-12-05 2015-10-29 表示装置基板、表示装置基板の製造方法、及び、これを用いた表示装置 WO2016088488A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020177010547A KR101935187B1 (ko) 2014-12-05 2015-10-29 표시 장치 기판, 표시 장치 기판의 제조 방법, 및 이것을 사용한 표시 장치
JP2016510337A JP6070896B2 (ja) 2014-12-05 2015-10-29 表示装置基板、表示装置基板の製造方法、及び、これを用いた表示装置
CN201580057277.0A CN107077807B (zh) 2014-12-05 2015-10-29 显示装置基板、显示装置基板的制造方法及使用其的显示装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014247206 2014-12-05
JP2014-247206 2014-12-05

Publications (1)

Publication Number Publication Date
WO2016088488A1 true WO2016088488A1 (ja) 2016-06-09

Family

ID=56091443

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2015/080546 WO2016088488A1 (ja) 2014-12-05 2015-10-29 表示装置基板、表示装置基板の製造方法、及び、これを用いた表示装置

Country Status (5)

Country Link
JP (1) JP6070896B2 (zh)
KR (1) KR101935187B1 (zh)
CN (1) CN107077807B (zh)
TW (1) TWI663586B (zh)
WO (1) WO2016088488A1 (zh)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017054926A (ja) * 2015-09-09 2017-03-16 凸版印刷株式会社 配線基板、半導体装置、および液晶表示装置
CN107703685A (zh) * 2016-08-08 2018-02-16 东京应化工业株式会社 层叠体和层叠体的制造方法
WO2018051487A1 (ja) * 2016-09-16 2018-03-22 凸版印刷株式会社 表示装置及び表示装置基板
WO2018073690A1 (en) * 2016-10-21 2018-04-26 Semiconductor Energy Laboratory Co., Ltd. Touch sensor, display device, display module, and electronic device
JP2018084803A (ja) * 2016-11-25 2018-05-31 東友ファインケム株式会社Ｄｏｎｇｗｏｏ Ｆｉｎｅ−Ｃｈｅｍ Ｃｏ．， Ｌｔｄ． Ｏｌｅｄ一体型タッチセンサーおよびそれを含むｏｌｅｄディスプレイ
JP2019001007A (ja) * 2017-06-12 2019-01-10 東京応化工業株式会社 積層体、及び積層体の製造方法
WO2019087332A1 (ja) * 2017-11-01 2019-05-09 株式会社ワコム 位置検出システム及びタッチセンサ
JP2019135589A (ja) * 2018-02-05 2019-08-15 凸版印刷株式会社 表示装置
CN110931507A (zh) * 2018-09-19 2020-03-27 夏普株式会社 有源矩阵基板及其制造方法、液晶显示装置的制造方法
JP2020166057A (ja) * 2019-03-28 2020-10-08 株式会社ジャパンディスプレイ 検出装置付き表示機器
TWI715631B (zh) * 2016-09-20 2021-01-11 日商凸版印刷股份有限公司 顯示裝置及顯示裝置基板
CN112785917A (zh) * 2019-11-04 2021-05-11 群创光电股份有限公司 电子装置
TWI735597B (zh) * 2016-08-08 2021-08-11 日商東京應化工業股份有限公司 基板的製造方法
JP2021521632A (ja) * 2018-04-06 2021-08-26 グロ アーベーＧｌｏ Ａｂ 多層バス電極を含む発光ダイオードアレイ、および、その製造方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018054874A (ja) * 2016-09-29 2018-04-05 株式会社ジャパンディスプレイ 表示装置
TWI631513B (zh) * 2016-11-08 2018-08-01 關鍵禾芯科技股份有限公司 指紋辨識模組
CN110161767A (zh) * 2018-02-11 2019-08-23 宁波祢若电子科技有限公司 一种复合透明导电层及均匀响应的大面积电致变色器件
TWI694424B (zh) * 2019-03-29 2020-05-21 友達光電股份有限公司 顯示裝置及其製造方法
CN111402737A (zh) * 2020-03-26 2020-07-10 昆山国显光电有限公司 一种显示面板
CN113192973A (zh) * 2021-04-02 2021-07-30 Tcl华星光电技术有限公司 阵列基板及微型发光二极管显示面板
KR102361655B1 (ko) * 2021-04-07 2022-02-14 부경대학교 산학협력단 잉크젯을 이용하여 색상 얼룩이 없는 디스플레이 패널 제조방법
TWI776654B (zh) * 2021-08-24 2022-09-01 友達光電股份有限公司 顯示裝置及其製造方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010072584A (ja) * 2008-09-22 2010-04-02 Dainippon Printing Co Ltd 表示装置用基板、および、表示装置
JP2010072581A (ja) * 2008-09-22 2010-04-02 Dainippon Printing Co Ltd カラーフィルタ、表示装置、および、カラーフィルタの製造方法
JP2011128208A (ja) * 2009-12-15 2011-06-30 Toppan Printing Co Ltd カラーフィルタ基板及びその製造方法
JP2012098687A (ja) * 2010-10-29 2012-05-24 Samsung Mobile Display Co Ltd タッチスクリーンパネル内蔵型液晶表示装置
JP2012215764A (ja) * 2011-04-01 2012-11-08 Toppan Printing Co Ltd カラーフィルタ基板及びそれを備えた液晶表示装置
JP2012220670A (ja) * 2011-04-07 2012-11-12 Toppan Printing Co Ltd タッチパネル電極付きカラーフィルタとその製造方法
WO2013018495A1 (ja) * 2011-07-29 2013-02-07 シャープ株式会社 タッチパネル基板及び表示パネル
JP2013174900A (ja) * 2013-04-18 2013-09-05 Toppan Printing Co Ltd タッチパネル電極付カラーフィルタ基板の製造方法
WO2013141056A1 (ja) * 2012-03-22 2013-09-26 シャープ株式会社 カラーフィルター一体型タッチパネル
JP2013246289A (ja) * 2012-05-25 2013-12-09 Panasonic Liquid Crystal Display Co Ltd 液晶表示装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060035164A (ko) * 2004-10-21 2006-04-26 삼성전자주식회사 금속 배선과 이의 제조 방법과, 이를 구비한 어레이 기판및 이의 제조 방법과, 이를 구비한 표시 패널
US8383019B2 (en) 2005-09-20 2013-02-26 Idemitsu Kosan Co., Ltd. Sputtering target, transparent conductive film and transparent electrode
US8263977B2 (en) * 2005-12-02 2012-09-11 Idemitsu Kosan Co., Ltd. TFT substrate and TFT substrate manufacturing method
JP5435556B2 (ja) 2009-09-16 2014-03-05 日本写真印刷株式会社 導電性シート、積層導電性シート及び導電性パターンシート、並びに積層導電性シートの製造方法、透明アンテナ又は透明ディスプレイ又はタッチ入力シートの製造方法
CN103168285B (zh) 2010-10-19 2016-05-11 Lg化学株式会社 包括导电图形的触摸面板及其制备方法
CN103247531B (zh) * 2012-02-14 2016-02-17 群康科技(深圳)有限公司 薄膜晶体管及其制作方法及显示器
US8907871B2 (en) * 2012-03-15 2014-12-09 Corning Incorporated Touch screen assemblies for electronic devices
CN102799014B (zh) * 2012-09-07 2014-09-10 深圳市华星光电技术有限公司 液晶显示面板的制作方法
EP2950121B1 (en) * 2013-01-25 2018-11-21 Toppan Printing Co., Ltd. Color filter substrate, liquid-crystal display device, and method for manufacturing color filter substrate
JP2014182203A (ja) 2013-03-18 2014-09-29 Japan Display Inc 表示装置および電子機器
KR102152588B1 (ko) * 2014-07-10 2020-09-07 도판 인사츠 가부시키가이샤 흑색 전극 기판, 흑색 전극 기판의 제조 방법, 및 표시 장치
CN104503127B (zh) * 2014-12-01 2017-10-13 深圳市华星光电技术有限公司 阵列基板及其制作方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010072584A (ja) * 2008-09-22 2010-04-02 Dainippon Printing Co Ltd 表示装置用基板、および、表示装置
JP2010072581A (ja) * 2008-09-22 2010-04-02 Dainippon Printing Co Ltd カラーフィルタ、表示装置、および、カラーフィルタの製造方法
JP2011128208A (ja) * 2009-12-15 2011-06-30 Toppan Printing Co Ltd カラーフィルタ基板及びその製造方法
JP2012098687A (ja) * 2010-10-29 2012-05-24 Samsung Mobile Display Co Ltd タッチスクリーンパネル内蔵型液晶表示装置
JP2012215764A (ja) * 2011-04-01 2012-11-08 Toppan Printing Co Ltd カラーフィルタ基板及びそれを備えた液晶表示装置
JP2012220670A (ja) * 2011-04-07 2012-11-12 Toppan Printing Co Ltd タッチパネル電極付きカラーフィルタとその製造方法
WO2013018495A1 (ja) * 2011-07-29 2013-02-07 シャープ株式会社 タッチパネル基板及び表示パネル
WO2013141056A1 (ja) * 2012-03-22 2013-09-26 シャープ株式会社 カラーフィルター一体型タッチパネル
JP2013246289A (ja) * 2012-05-25 2013-12-09 Panasonic Liquid Crystal Display Co Ltd 液晶表示装置
JP2013174900A (ja) * 2013-04-18 2013-09-05 Toppan Printing Co Ltd タッチパネル電極付カラーフィルタ基板の製造方法

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017054926A (ja) * 2015-09-09 2017-03-16 凸版印刷株式会社 配線基板、半導体装置、および液晶表示装置
CN107703685B (zh) * 2016-08-08 2022-03-18 东京应化工业株式会社 层叠体和层叠体的制造方法
CN107703685A (zh) * 2016-08-08 2018-02-16 东京应化工业株式会社 层叠体和层叠体的制造方法
TWI735597B (zh) * 2016-08-08 2021-08-11 日商東京應化工業股份有限公司 基板的製造方法
WO2018051487A1 (ja) * 2016-09-16 2018-03-22 凸版印刷株式会社 表示装置及び表示装置基板
KR102207053B1 (ko) * 2016-09-16 2021-01-25 도판 인사츠 가부시키가이샤 표시 장치 및 표시 장치 기판
JPWO2018051487A1 (ja) * 2016-09-16 2018-09-13 凸版印刷株式会社 表示装置及び表示装置基板
CN109478110A (zh) * 2016-09-16 2019-03-15 凸版印刷株式会社 显示装置及显示装置基板
KR20190028759A (ko) * 2016-09-16 2019-03-19 도판 인사츠 가부시키가이샤 표시 장치 및 표시 장치 기판
TWI715631B (zh) * 2016-09-20 2021-01-11 日商凸版印刷股份有限公司 顯示裝置及顯示裝置基板
JP2018073408A (ja) * 2016-10-21 2018-05-10 株式会社半導体エネルギー研究所 タッチセンサ、表示装置、表示モジュール、及び電子機器
US11614816B2 (en) 2016-10-21 2023-03-28 Semiconductor Energy Laboratory Co., Ltd. Touch sensor, display device, display module, and electronic device
US11204658B2 (en) 2016-10-21 2021-12-21 Semiconductor Energy Laboratory Co., Ltd. Touch sensor, display device, display module, and electronic device
WO2018073690A1 (en) * 2016-10-21 2018-04-26 Semiconductor Energy Laboratory Co., Ltd. Touch sensor, display device, display module, and electronic device
JP2018084803A (ja) * 2016-11-25 2018-05-31 東友ファインケム株式会社Ｄｏｎｇｗｏｏ Ｆｉｎｅ−Ｃｈｅｍ Ｃｏ．， Ｌｔｄ． Ｏｌｅｄ一体型タッチセンサーおよびそれを含むｏｌｅｄディスプレイ
JP2019001007A (ja) * 2017-06-12 2019-01-10 東京応化工業株式会社 積層体、及び積層体の製造方法
JPWO2019087332A1 (ja) * 2017-11-01 2020-11-19 株式会社ワコム 位置検出システム及びタッチセンサ
WO2019087332A1 (ja) * 2017-11-01 2019-05-09 株式会社ワコム 位置検出システム及びタッチセンサ
US11914817B2 (en) 2017-11-01 2024-02-27 Wacom Co., Ltd. Position detection system and touch sensor
US11294506B2 (en) 2017-11-01 2022-04-05 Wacom Co., Ltd. Position detection system and touch sensor
JP7013902B2 (ja) 2018-02-05 2022-02-01 凸版印刷株式会社 表示装置
JP2019135589A (ja) * 2018-02-05 2019-08-15 凸版印刷株式会社 表示装置
JP2021521632A (ja) * 2018-04-06 2021-08-26 グロ アーベーＧｌｏ Ａｂ 多層バス電極を含む発光ダイオードアレイ、および、その製造方法
JP7289849B2 (ja) 2018-04-06 2023-06-12 ナノシス， インコーポレイテッド 多層バス電極を含む発光ダイオードアレイ、および、その製造方法
CN110931507A (zh) * 2018-09-19 2020-03-27 夏普株式会社 有源矩阵基板及其制造方法、液晶显示装置的制造方法
CN110931507B (zh) * 2018-09-19 2023-06-06 夏普株式会社 有源矩阵基板及其制造方法、液晶显示装置的制造方法
JP7281940B2 (ja) 2019-03-28 2023-05-26 株式会社ジャパンディスプレイ 検出装置付き表示機器
JP2020166057A (ja) * 2019-03-28 2020-10-08 株式会社ジャパンディスプレイ 検出装置付き表示機器
CN112785917A (zh) * 2019-11-04 2021-05-11 群创光电股份有限公司 电子装置
CN112785917B (zh) * 2019-11-04 2023-10-10 群创光电股份有限公司 电子装置

Also Published As

Publication number Publication date
CN107077807B (zh) 2019-11-08
TWI663586B (zh) 2019-06-21
JP6070896B2 (ja) 2017-02-01
KR20170066443A (ko) 2017-06-14
TW201631564A (zh) 2016-09-01
CN107077807A (zh) 2017-08-18
JPWO2016088488A1 (ja) 2017-04-27
KR101935187B1 (ko) 2019-03-18

Similar Documents

Publication Publication Date Title
JP6070896B2 (ja) 表示装置基板、表示装置基板の製造方法、及び、これを用いた表示装置
US10031601B2 (en) Black electrode, method of manufacturing black electrode substrate and display device
US10452221B2 (en) Liquid crystal display device
JP5673782B1 (ja) 液晶表示装置
US10055058B2 (en) Liquid crystal display device with touch sensing function and plurality of transparent electrode patterns
KR102055740B1 (ko) 액정 표시 장치
US10437115B2 (en) Liquid crystal display device
WO2017195339A1 (ja) 表示装置
JP6528557B2 (ja) 表示装置基板、表示装置基板の製造方法、及びこれを用いた表示装置
TWI591402B (zh) Liquid crystal display device
TW201741749A (zh) 顯示裝置
TW201642107A (zh) 液晶顯示裝置

Legal Events

Date Code Title Description
ENP Entry into the national phase

Ref document number: 2016510337

Country of ref document: JP

Kind code of ref document: A

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15866064

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20177010547

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 15866064

Country of ref document: EP

Kind code of ref document: A1