WO2016084927A1 - Procédé et appareil de traitement de substrats - Google Patents

Procédé et appareil de traitement de substrats Download PDF

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Publication number
WO2016084927A1
WO2016084927A1 PCT/JP2015/083352 JP2015083352W WO2016084927A1 WO 2016084927 A1 WO2016084927 A1 WO 2016084927A1 JP 2015083352 W JP2015083352 W JP 2015083352W WO 2016084927 A1 WO2016084927 A1 WO 2016084927A1
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WIPO (PCT)
Prior art keywords
supply system
resist
chemical solution
detector
substrate
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PCT/JP2015/083352
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English (en)
Japanese (ja)
Inventor
剛 守屋
伸俊 寺澤
茂義 小島
林　聖人
正春 塩口
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東京エレクトロン株式会社
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Publication of WO2016084927A1 publication Critical patent/WO2016084927A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Definitions

  • the present invention relates to a substrate processing method and a substrate processing apparatus, and more particularly to a substrate processing method and a substrate processing apparatus for discharging a chemical solution toward a substrate.
  • a substrate processing apparatus in which a resist as a chemical solution is discharged onto a semiconductor wafer (hereinafter simply referred to as “wafer”) as a substrate to form a resist film on the wafer.
  • the resist stored in the bottle is discharged toward the wafer through a pump, a valve, a nozzle, and the like.
  • bubbles such as bubbles generated when passing through the pump or valve, or particles such as fine metal soot generated by the operation of the pump or valve may be involved.
  • the resist in which bubbles or particles are entrained flows through the supply line, and as a result, the resist film on the wafer contains particles or bubbles.
  • the particles function as an unintended mask, and the bubbles cause unintentional chipping in the pattern and cause defects in the pattern. For this reason, the wafer on which the pattern is formed may have to be discarded.
  • a sensor for detecting particles in the resist and a sensor for detecting bubbles are provided in the substrate processing apparatus, and when the particles or bubbles in the resist are detected, the discharge of the resist onto the wafer is interrupted (for example, , See Patent Documents 1 and 2).
  • a substrate processing apparatus after detecting the particles or bubbles in the resist and interrupting the discharge of the resist onto the wafer, dummy dispensing is performed to discard the resist in the supply line, or a new bottle is used. After replacing the bottle with a new one, the discharge of the resist onto the wafer was resumed.
  • the resist contains only air bubbles, the air bubbles may disappear over time, and in this case, the resist can be used.
  • the resist is always discarded both when the particles in the resist are detected and when the bubbles are detected, the resist containing only the bubbles that can be used over time is also discarded. It will be. That is, the resist is discarded more than necessary.
  • An object of the present invention is to provide a substrate processing method and a substrate processing apparatus that can prevent a chemical solution from being discarded more than necessary.
  • a substrate processing method in a substrate processing apparatus that discharges the chemical solution from a chemical solution supply system toward the substrate, and detects bubbles contained in the chemical solution in the supply system.
  • a substrate processing apparatus that discharges a chemical solution toward a substrate, the chemical solution supply system, provided in the supply system, and included in the chemical solution in the supply system
  • a detector for detecting a bubble to be detected, a branch point provided in the supply system on the downstream side of the detector, and a return path for connecting the branch point to a position upstream of the detector in the supply system
  • a control unit that, when the detector detects an unacceptable bubble, returns the chemical solution from the branch point to a position upstream of the detector via the return path.
  • a processing device is provided.
  • the chemical solution when air bubbles are detected, the chemical solution is returned to the upstream portion of the supply system without being discarded.
  • medical solution which can be supplied if a bubble lose
  • FIG. 2 It is a figure which shows schematically the structure of the resist film forming apparatus as one Embodiment of a substrate processing apparatus. It is a figure which shows schematically the structure of the optical system of the sensor in FIG. It is a figure which shows schematically the transmission part of the switcher and sensor in FIG. 2, (A) is a partial expansion perspective view which shows the structure of a transmission part, (B) is an expanded cross section which shows the positional relationship of a switcher and a transmission part.
  • FIG. It is a sequence diagram for demonstrating the measurement timing of the particle and bubble in a resist by the sensor in FIG. It is a flowchart which shows a resist discharge process. 6 is a flowchart illustrating a modification of the resist discharge process of FIG. 5.
  • FIG. 1 is a diagram schematically showing a configuration of a resist film forming apparatus as an embodiment of a substrate processing apparatus. *
  • a resist film forming apparatus 10 includes a bottle 11 (storage unit) that stores a resist (resist solution) as a chemical solution, a nozzle 13 that discharges the resist to a wafer W placed on a stage 12, and a bottle 11.
  • the pump 14 for pumping the resist stored in the nozzle 13 to the nozzle 13, the reservoir tank 15 for temporarily storing the resist disposed between the bottle 11 and the pump 14, and the resist 14 disposed between the pump 14 and the nozzle 13 Are provided with a filter 16 that removes particles larger than a predetermined size, and a controller (control unit) 17 that controls the operation of each component of the resist film forming apparatus 10.
  • the resist film forming apparatus 10 also includes a drain pipe 18 that discharges the resist from the bottle 11, a supply pipe 19 that supplies the resist from the bottle 11 to the reservoir tank 15, and a supply pipe that supplies the resist from the reservoir tank 15 to the pump 14. 20 and a supply pipe 21 for supplying a resist from the pump 14 to the nozzle 13 via the filter 16.
  • the resist film forming apparatus 10 includes a sensor 22 (detector) that is provided in the supply pipe 19 and that separately detects particles (foreign substances) and bubbles in the resist that flow in the supply pipe 19, and a filter in the supply pipe 21. 16, a sensor 23 (detector) that is arranged downstream of the filter 16 (between the filter 16 and the nozzle 13) and detects particles and bubbles in the resist flowing in the supply pipe 21.
  • the sensor 22 receives a light transmitting material, for example, a transmitting part 22a made of glass or transparent resin, an optical system 22b for irradiating the transmitting part 22a with laser light, and a laser beam transmitted through the transmitting part 22a. And a detector 22c.
  • a light transmitting material for example, a transmitting part 22a made of glass or transparent resin
  • an optical system 22b for irradiating the transmitting part 22a with laser light
  • a laser beam transmitted through the transmitting part 22a and a detector 22c.
  • the IPSA registered trademark
  • PML Particle-Monitoring-Technologies-Ltd.
  • the sensor 23 has the same configuration as the sensor 22 and can detect and detect particles and bubbles in the resist flowing in the supply pipe 21.
  • the resist film forming apparatus 10 may include a particle sensor that detects only particles in the resist and a bubble sensor that detects only bubbles in the resist, instead of the sensors 22 and 23 described above.
  • a detector composed of a pair of a particle sensor and a bubble sensor is formed, and the detector composed of such a sensor group is provided on the supply pipe 19 and also on the downstream side of the filter 16 in the supply pipe 21.
  • a return pipe 25 branches from the supply pipe 21 so that the resist can be returned from the branch point 24 of the supply pipe 21 to the bottle 11. It has become.
  • a return pipe 27 and a drain pipe 28 are branched from the supply pipe 19 at a branch point 26 between the sensor 22 and the reservoir tank 15. Thereby, the resist can flow from the branch point 26 of the supply pipe 19 to the return pipe 25 via the return pipe 27, and the resist can be discharged from the branch point 26 of the supply pipe 19 via the drain pipe 28. It can be done.
  • the pump 14 is provided with a drain pipe 29 for discharging the resist from the pump 14.
  • the drain pipe 18, the supply pipe 19 (position between the branch point 26 and the reservoir tank 15), the return pipe 27, the drain pipe 28, the drain pipe 29, the return pipe 25 and the supply pipe 21 (the branch point 24 and the nozzle 13 are provided with valves 30, 31, 32, 33, 34, 35 and 36, respectively.
  • a bottle 11, a supply pipe 19, a reservoir tank 15, a supply pipe 20, a supply pipe 21 including a pump 14 and a filter 16, and a nozzle 13 constitute a resist supply system. Then, the resist is discharged toward the wafer W. The discharged resist is solidified on the wafer W to form a resist film.
  • the sensors 22 and 23 are respectively arranged immediately downstream of the bottle 11 and the pump 14 (generation source) that are likely to generate particles or bubbles in the supply system. At this time, by specifying which of the sensor 22 and the sensor 23 has detected the particles or bubbles, it is possible to specify whether the generation source of the particles or bubbles is the bottle 11 or the pump 14. Troubleshooting can be performed easily. *
  • FIG. 2 is a diagram schematically showing the configuration of the optical system of the sensor in FIG.
  • the resist film forming apparatus 10 actually includes, for example, 72 nozzles 13.
  • One optical module is provided corresponding to the 12 nozzles 13. That is, the resist film forming apparatus 10 has six optical modules. Each optical module has one transmission part 23 a, and one transmission part 23 a constitutes a part of each of 12 supply pipes 21 corresponding to 12 nozzles 13.
  • the optical system 23b of the sensor 23 has a function of dividing laser light emitted from one laser light source.
  • the optical system 23b of the sensor 23 includes a laser light source 23d and a laser splitter (beam splitter) 23e that divides the laser light emitted from the laser light source 23d into the same number of lights as the number of optical modules. And a switcher 23f that selectively guides each of the divided laser beams to any one of the twelve supply pipes 21 included in the corresponding one transmission portion 23a.
  • Each optical module has one laser light trap 37, and the switcher 23 f can guide the laser light not only to a part of each supply pipe 21 but also to the laser light trap 37.
  • the switcher 23f does not simultaneously guide the laser light to the plurality of supply pipes 21 in one transmission part 23a.
  • two of the nozzles 13 corresponding to one optical module are used.
  • the resist is not discharged simultaneously from more than one, and the resist is always discharged only from one nozzle 13. Therefore, particles and bubbles in the resist discharged toward the wafer W can be measured without the switcher 23f guiding laser light to the plurality of supply pipes 21 at the same time.
  • the switcher 23f does not guide laser light to the plurality of supply pipes 21 at the same time, and sequentially switches the irradiation destination of the laser light to any one of the plurality of supply pipes 21.
  • the intensity of the emitted laser light does not extremely decrease due to the light splitting. For this reason, it can prevent that the detection sensitivity of the particle
  • FIG. 3 is a diagram schematically showing a transmissive portion of the switcher and sensor in FIG. 2
  • FIG. 3A is a partially enlarged perspective view showing a configuration of the transmissive portion
  • FIG. 3B is a diagram showing the switcher and the transmissive portion. It is an expanded sectional view which shows the positional relationship of a part.
  • one transmission part 23a includes twelve supply pipes 21, but in FIG. 3A and FIG. 3B, four transmission parts 23a are provided for simplification of the drawing. The state including the supply pipe 21 is shown.
  • the supply pipes 21 are arranged in parallel with each other at substantially equal intervals, and the laser light L is transmitted through the supply pipes 21 in the flow direction of the resist. Incident vertically.
  • the optical system 23b is disposed so as to face the transmission part 23a, and moves in parallel with the arrangement direction of the supply pipes 21.
  • the optical system 23b is supplied to the supply pipe 21 corresponding to the nozzle 13 for discharging the resist, that is, to the supply pipe 21 through which the resist flows. It moves to the position where it faces, and irradiates the laser beam L toward the supply pipe 21.
  • the detection unit 23c always faces the optical system 23b with the transmission unit 23a interposed therebetween, and moves in accordance with the movement of the optical system 23b.
  • FIG. 4 is a sequence diagram for explaining the measurement timing of particles and bubbles in the resist by the sensor in FIG.
  • a predetermined time t is required from the start of the discharge of the resist to the nozzle 13 until the resist is stably discharged.
  • the optical systems 22b and 23b of the sensors 22 and 23 start irradiating the laser beam transmitting portions 22a and 23a simultaneously with the start of the resist discharge.
  • the detectors 22c and 23c start measuring particles and bubbles in the resist when the predetermined time t has elapsed and the resist is stably ejected from the nozzle 13.
  • the discharge of the resist is stopped at the nozzle 13.
  • Another predetermined time T is required until the discharge of the resist from the nozzle 13 is completed.
  • the optical systems 22b and 23b terminate the irradiation of the laser light transmitting portions 22a and 23a simultaneously with the stop of the discharge of the resist at the nozzle 13, and the detection portions 22c and 23c also stop simultaneously with the stop of the discharge of the resist at the nozzle 13.
  • the measurement of particles and bubbles in the resist is finished.
  • the resist is not irradiated with laser light more than necessary, and the resist can be prevented from being altered by the laser light.
  • FIG. 5 is a flowchart showing a resist discharge process as a substrate processing method according to the present embodiment.
  • the valves 31 and 36 are opened, the valves 30 and 32 to 35 are closed, the resist is supplied from the bottle 11 to the nozzle 13, and the resist is supplied to the wafer W from the nozzle 13.
  • the controller 17 executes the ink according to a predetermined program.
  • the sensor 22 or sensor 23 measures the size and number of particles and bubbles in the resist flowing in the supply pipe 19 and the supply pipe 21 (step S51).
  • step S52 it is determined whether or not the sensor 22 or sensor 23 has detected particles in step S51 (step S52).
  • the size of the detected particles is a predetermined value, for example, the minimum value of the size of particles that cause defects in the resist film on the wafer W (second predetermined value). Value), specifically, it is determined whether or not the number of particles having a diameter exceeding 20 nm is greater than a threshold (second threshold), for example, 10 (step S53).
  • second threshold for example, 10
  • the predetermined value of particle size and the threshold value of the number vary depending on the specifications of the resist film forming apparatus 10.
  • a plurality of types of determination for example, not only whether the number of particles having a diameter exceeding 20 nm is larger than 10 or not, but whether the number of particles having a diameter exceeding 100 nm is larger than 5). Determination of whether or not) may be performed.
  • the predetermined value or the threshold value of the particle size may be stored in advance in the storage medium of the controller 17 or may be input to the resist film forming apparatus 10 by the user prior to the resist discharge process.
  • step S53 If it is determined in step S53 that the number of particles whose size exceeds a predetermined value is equal to or less than the threshold value (NO in step S53), the resist film is continuously discharged to the wafer W and the resist film forming process is continued ( Step S54), and then the present process is terminated.
  • step S53 when the number of particles whose size exceeds the predetermined value is larger than the threshold value (YES in step S53), the valve 36 is closed to temporarily stop the discharge of the resist onto the wafer W, and the wafer W is removed from the stage 12. Thereafter, the valve 36 is opened to execute a dummy dispense for continuing the discharge of the resist to discard the resist from the resist supply system (step S55), and then the present process is terminated.
  • step S55 When executing dummy dispensing in step S55, the valves 30, 33, and 34 are opened and the resist is also discharged from the drain pipes 18, 28, and 29 in order to promote the disposal of the resist from the resist supply system. Also good.
  • the size of the detected bubbles is a predetermined value, for example, a resist film on the wafer W
  • a predetermined value for example, a resist film on the wafer W
  • first predetermined value the predetermined value of the bubble size and the threshold value for the number of bubbles also differ depending on the specifications of the resist film forming apparatus 10.
  • a plurality of types of determinations may be performed in step S56.
  • the predetermined value of the bubble size and the threshold value for the number of bubbles may be stored in advance in the storage medium of the controller 17 or may be input to the resist film forming apparatus 10 by the user.
  • step S56 If it is determined in step S56 that the number of bubbles whose size exceeds a predetermined value is equal to or less than the threshold value (NO in step S56), the resist film is continuously discharged and the resist film forming process is continued ( Step S57), and then the present process is terminated.
  • Step S58 when the number of bubbles whose size exceeds the predetermined value is larger than the threshold value (YES in step S56), the valve 36 is closed to interrupt the discharge of the resist from the nozzle 13 to the wafer W, and the valve 35 is opened.
  • the resist fed by pressure from the pump 14 is returned to the bottle 11 via the return pipe 25, and the valve 31 is closed and the valve 32 is opened, and the resist is returned to the bottle 11 via the return pipe 27.
  • Step S58 In the resist supply system, a large amount of resist is not supplied from the bottle 11 through the supply pipe 19 at a time, and a small amount of resist is continuously supplied. Therefore, the resist returned to the bottle 11 is immediately supplied again. It will not be done. For this reason, it is possible to secure a sufficient time for the bubbles present in the resist returned to the bottle 11 to disappear. Therefore, the resist can be supplied again after the bubbles are surely eliminated. Thereafter, this process is terminated.
  • the discharge of the resist onto the wafer W is interrupted.
  • the discharge of the resist from the nozzle 13 onto the wafer W may not be interrupted immediately. For example, if the sensor 23 detects an unacceptable level of particles or bubbles for the first time at a certain time, the section from the sensor 23 to the nozzle 13 does not include an unacceptable level of particles or bubbles at that time. Will exist.
  • the resist discharge onto the wafer W may be continued until all of the resist existing in the section from the sensor 23 to the nozzle 13 is discharged from the nozzle 13, and then the resist discharge may be interrupted. This can also prevent unnecessary discarding of the resist.
  • a further sensor may be provided immediately before the nozzle 13 and the size and number of particles and bubbles in the resist may be measured immediately before the nozzle 13.
  • FIG. 6 is a flowchart showing a modification of the resist discharge process of FIG.
  • the resist discharge process in FIG. 6 is almost the same process as the resist discharge process in FIG. 5, and only steps S61 and S62 described later are executed instead of steps S55 and S58 in FIG. 5. Different from resist discharge processing. Only differences from the resist discharge process of FIG. 5 will be described below.
  • step S53 when it is determined in step S53 that the number of particles whose size exceeds a predetermined value is larger than the threshold value (YES in step S53), the valve 36 is closed to discharge the resist onto the wafer W.
  • the valve 35 is opened to return the resist to the bottle 11 through the return pipe 25, and the returned resist is supplied again from the bottle 11 to pass through the filter 16 of the supply pipe 21. That is, the resist is returned to the position upstream of the filter 16 of the resist supply system (step S61). Particles may be removed from the resist as it passes through the filter 16, and if no problem level particles are detected in the resist by passing through the filter 16, the wafer is not discarded without discarding the resist. It is possible to discharge to W. As a result, it is possible to prevent the resist from being discarded more than necessary. Thereafter, this process is terminated.
  • step S56 If it is determined in step S56 that the number of bubbles whose size exceeds a predetermined value is larger than the threshold value (YES in step S56), the valve 36 is closed and the discharge of the resist onto the wafer W is temporarily interrupted. Then, after removing the wafer W from the stage 12, the valve 36 is opened and a dummy dispense for discharging the resist is executed to discard the resist from the resist supply system (step S62).
  • the predetermined value of the bubble size as the determination criterion is the minimum value of the bubble size that does not disappear even if the resist is once returned to the bottle 11. By doing so, it is possible to prevent wasteful circulation of a resist containing many bubbles of a size that does not disappear, and to maintain throughput.
  • step S57 may be executed instead of step S62.
  • step S53 whether or not the size of the detected particle is smaller than the size that can be removed by the filter 16 is determined. If the size is smaller than the size removable by the filter 16, step S55 may be executed. If the size is larger than the size removable by the filter 16, step S61 may be executed. In the case of YES in step S56, it is further determined whether or not the detected bubble size is smaller than the bubble size that does not disappear even if it is returned to the bottle 11, and if it is smaller, step S58 is executed. Step S62 may be executed.
  • the configuration of the optical system 23b of the sensor 23 is not limited to the configuration illustrated in FIG. 2, and may include six laser light sources 23g corresponding to each of the six optical modules as illustrated in FIG. .
  • the laser light from each laser light source 23g may be guided to the switcher 23f corresponding to each optical module without being divided.
  • the intensity of the laser light guided to the transmission part 23a corresponding to each optical module does not decrease due to the division, the detection sensitivity of particles and bubbles in the resist can be kept high.
  • a laser light source having a small output can be used as compared with the case of dividing the laser light.
  • the resist film forming apparatus 10 may include two laser light sources 23h, and each laser light source 23h may be responsible for supplying laser light to three optical modules. .
  • the laser light from one laser light source 23h is sequentially switched and guided to the three switchers 23f respectively corresponding to the three optical modules by the switcher 23i.
  • the output of the laser light guided to the transmission part 23a of each optical module is not reduced by the light division, and the number of laser light sources is reduced as compared with the optical system 23b of FIG.
  • the configuration of 23b can be simplified.
  • the laser beam from one laser light source 23d is divided into two laser beams by a laser splitter 23j, and each of these two laser beams is converted into three optical beams by a switcher 23i.
  • the light may be switched by sequentially switching to the three switchers 23f corresponding to the modules.
  • the degree of intensity reduction of the laser beam due to the light splitting can be reduced.
  • the laser light from one laser light source 23d may be sequentially switched and guided to six switchers 23f corresponding to the six optical modules by the switcher 23k. Also in this case, since the output of the laser light guided to the transmission part 23a corresponding to each optical module does not decrease, the detection sensitivity of particles and bubbles in the resist can be kept high.
  • a storage medium in which a program code of software that realizes the above-described function is recorded is supplied to a computer, for example, the controller 17, and the CPU of the controller 17 reads out the program code stored in the storage medium. This can be done by executing.
  • Examples of storage media for supplying the program code include RAM, NV-RAM, floppy (registered trademark) disk, hard disk, magneto-optical disk, CD-ROM, CD-R, CD-RW, DVD (DVD- Any optical disc such as ROM, DVD-RAM, DVD-RW, DVD + RW), magnetic tape, non-volatile memory card, ROM, etc. can be used as long as it can store the program code.
  • the program code may be supplied to the controller 17 by downloading from another computer (not shown) connected to the Internet, a commercial network, a local area network, or the like, or a database.
  • the program code read from the storage medium is written in the memory provided in the function expansion board inserted into the controller 17 or the function expansion unit connected to the controller 17, the program code is read based on the instruction of the program code.
  • the CPU or the like provided in the function expansion board or function expansion unit may perform part or all of the actual processing, and the above-described functions may be realized by the processing.
  • the form of the program code may be in the form of object code, program code executed by an interpreter, script data supplied to the OS, and the like.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Coating Apparatus (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

L'invention concerne un procédé de traitement de substrats dans un appareil de traitement de substrats, au cours duquel une solution chimique est éjectée en direction d'un substrat à partir d'un système d'amenée de la solution chimique, caractérisé en ce que, lorsqu'un détecteur servant à détecter des bulles contenues dans la solution chimique à l'intérieur du système d'amenée détecte que la solution chimique à l'intérieur du système d'amenée contient des bulles inacceptables (S56), la solution chimique est renvoyée à une section amont du système d'amenée (S58).
PCT/JP2015/083352 2014-11-28 2015-11-27 Procédé et appareil de traitement de substrats WO2016084927A1 (fr)

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JP2014-241816 2014-11-28
JP2014241816A JP2016103590A (ja) 2014-11-28 2014-11-28 基板処理方法及び基板処理装置

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