WO2016002077A1 - 電力用半導体装置 - Google Patents

電力用半導体装置 Download PDF

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Publication number
WO2016002077A1
WO2016002077A1 PCT/JP2014/067950 JP2014067950W WO2016002077A1 WO 2016002077 A1 WO2016002077 A1 WO 2016002077A1 JP 2014067950 W JP2014067950 W JP 2014067950W WO 2016002077 A1 WO2016002077 A1 WO 2016002077A1
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WIPO (PCT)
Prior art keywords
power semiconductor
semiconductor device
signal line
emitter
main terminals
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PCT/JP2014/067950
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English (en)
French (fr)
Inventor
憲司 羽鳥
周一 北村
哲男 本宮
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三菱電機株式会社
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Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to US15/300,583 priority Critical patent/US10186607B2/en
Priority to PCT/JP2014/067950 priority patent/WO2016002077A1/ja
Priority to CN201480080396.3A priority patent/CN106663675B/zh
Priority to DE112014006786.5T priority patent/DE112014006786B4/de
Priority to JP2016530791A priority patent/JP6227141B2/ja
Publication of WO2016002077A1 publication Critical patent/WO2016002077A1/ja

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Definitions

  • the present invention relates to a power semiconductor device including a semiconductor switch element.
  • a power semiconductor device including a semiconductor switch element is applied to an inverter, a converter, or the like (for example, Patent Document 1).
  • the waveform of the gate signal vibrates immediately after the turn-off switch.
  • the mechanism of the occurrence of this vibration phenomenon has not been fully elucidated, but such vibration in the waveform of the gate signal may cause malfunction of the power semiconductor device. It has been.
  • the present invention has been made in view of the above problems, and an object thereof is to provide a technique capable of suppressing the vibration of the waveform of the gate signal.
  • a power semiconductor device includes a semiconductor switch element, a plurality of collector main terminals and a plurality of emitters that are electrically connected to the semiconductor switch element and have projecting portions that project from an arrangement surface of the semiconductor switch element.
  • a signal line that surrounds the entire circumference of all the protruding portions and is separated in plan view with respect to the main terminal, the protruding portions of the plurality of collector main terminals, and the protruding portions of the plurality of emitter main terminals.
  • the vibration of the waveform of the gate signal can be suppressed.
  • FIG. 1 is a perspective view showing a configuration of a power semiconductor device according to a first embodiment.
  • 1 is a cross-sectional perspective view schematically showing a partial configuration of a power semiconductor device according to a first embodiment.
  • 1 is a cross-sectional perspective view schematically showing a partial configuration of a power semiconductor device according to a first embodiment. It is a perspective view which shows the structure of a related semiconductor device. It is a figure which shows the waveform of each signal of a related semiconductor device.
  • FIG. 3 is a diagram illustrating waveforms of signals of the power semiconductor device according to the first embodiment.
  • FIG. 6 is a cross-sectional perspective view schematically showing a partial configuration of a power semiconductor device according to a modification of the first embodiment.
  • FIG. 6 is a cross-sectional perspective view schematically showing a partial configuration of a power semiconductor device according to a second embodiment.
  • FIGS. 2 and 3 are cross-sectional perspective views taken along lines AA and BB in FIG. FIG. 2 and 3, for the sake of easy understanding, some of the components of the power semiconductor device of FIG. 1 are omitted, or the gate signal electrode 3d and the emitter signal electrode 3e of FIG. The arrangement has been changed.
  • the power semiconductor device includes a heat dissipation base plate 1, a plurality of chip mounting substrates 2, a plurality of signal electrode portions 3, a plurality of collector main terminals 4, and a plurality of emitter main terminals shown in FIG. 5, a printed circuit board 6, an emitter wire 7a, a gate signal wire 7b, an emitter signal wire 7c shown in FIG. 2, and a signal line 8 shown in FIG.
  • the plurality of chip mounting substrates 2 and the plurality of signal electrode portions 3 are disposed on the main surface of the heat radiating base plate 1 made of metal.
  • Each chip mounting substrate 2 includes a solder 2a, a metal electrode 2b, an insulating substrate 2c (for example, a ceramic substrate), a collector electrode 2d, an emitter electrode 2e, a solder 2f, and a power semiconductor chip 2g shown in FIG.
  • the solder 2a, the metal electrode 2b, and the insulating substrate 2c are disposed on the main surface of the heat radiating base plate 1 in this order.
  • the collector electrode 2d and the emitter electrode 2e are disposed on the main surface of the insulating substrate 2c.
  • the power semiconductor chip 2g is joined to the collector electrode 2d by solder 2f.
  • the power semiconductor chip 2g is made of a wide band gap semiconductor such as silicon carbide (SiC), gallium nitride (GaN), or diamond, and is mounted on a semiconductor module (not shown).
  • the power semiconductor chip 2g includes a semiconductor switch element (not shown) such as an IGBT (Insulated Gate Bipolar Transistor) and a diode (not shown).
  • Each signal electrode section 3 includes a solder 3a, a metal electrode 3b, an insulating substrate 3c (for example, a ceramic substrate), a gate signal electrode 3d, and an emitter signal electrode 3e shown in FIG.
  • the solder 3a, the metal electrode 3b, and the insulating substrate 3c are disposed on the main surface of the heat radiating base plate 1 in this order.
  • the gate signal electrode 3d and the emitter signal electrode 3e are disposed on the main surface of the insulating substrate 3c, and have a projecting portion that projects from the disposed surface and reaches the printed circuit board 6.
  • the power semiconductor chip 2g is electrically connected to the emitter electrode 2e through the emitter wire 7a, is electrically connected to the gate signal electrode 3d through the gate signal wire 7b, and is connected to the emitter signal electrode through the emitter signal wire 7c. 3e is electrically connected.
  • Each collector main terminal 4 is electrically connected to the power semiconductor chip 2g (semiconductor switching element) via the collector electrode 2d, and protrudes from the arrangement surface of the power semiconductor chip 2g (semiconductor switching element).
  • the arrangement surface of the power semiconductor chip 2g corresponds to the main surface of the insulating substrate 2c.
  • Each emitter main terminal 5 is electrically connected to the power semiconductor chip 2g (semiconductor switch element) via the emitter wire 7a and the emitter electrode 2e, and from the arrangement surface of the power semiconductor chip 2g (semiconductor switch element). It has a protruding portion that protrudes. With the configuration as described above, the collector main terminal 4 and the emitter main terminal 5 are connected in parallel to the power semiconductor chip 2g.
  • the number of collector main terminals 4 and emitter main terminals 5 may be plural, and is not limited to three as shown in FIG.
  • a package of 1 in 1 one element in one module
  • two collector main terminals 4 and emitter main terminals 5 or three collector main terminals 4 and emitter main terminals 5 are connected to a semiconductor switch element.
  • a structure is used in which a parallel current flows through these terminals.
  • the printed circuit board 6 is arranged in parallel with the arrangement surface above the arrangement surface of the power semiconductor chip 2g, and a plurality of holes 6a having a square shape in plan view are provided as shown in FIGS. It has been.
  • the protruding portions of the pair of collector main terminals 4 and emitter main terminals 5 are loosely fitted in the holes 6a.
  • the printed circuit board 6 surrounds the entire periphery of all the protruding portions with respect to the protruding portions of the plurality of collector main terminals 4 and the protruding portions of the plurality of emitter main terminals 5, and in plan view It is separated.
  • the signal line 8 includes a gate signal line 8 a and an emitter signal line 8 b, and is wired to the printed board 6.
  • the gate signal line 8a is wired on the top surface of the printed circuit board 6, and the emitter signal line 8b is wired on the back surface of the printed circuit board 6.
  • the present invention is not limited to this. Both the 8a and the emitter signal line 8b may be wired together on either the upper surface or the back surface of the printed circuit board 6.
  • the signal lines 8 are all the same as the printed circuit board 6 with respect to the protruding portions of the plurality of collector main terminals 4 and the protruding portions of the plurality of emitter main terminals 5. It surrounds the entire circumference of the protruding portion and is spaced apart in plan view.
  • the distance (gap) between the signal line 8 (the gate signal line 8a and the emitter signal line 8b) and each of the plurality of collector main terminals 4 and the plurality of emitter main terminals 5 is required for the power semiconductor device. It is determined in consideration of pressure resistance and size.
  • this distance (gap) is preferably about 3.0 to 30.0 mm from the viewpoint of avoiding an extremely large package in a power semiconductor device having a breakdown voltage of 3.3 kV or more.
  • the dielectric strength of air is 3 kV / mm.
  • the gate signal line 8a is electrically connected to the power semiconductor chip 2g (semiconductor switch element) via the gate signal electrode 3d and the like, and the emitter signal line 8b is connected to the power semiconductor chip 2g (semiconductor) via the emitter signal electrode 3e and the like. Switch element).
  • related semiconductor device a power semiconductor device related thereto (hereinafter referred to as “related semiconductor device”) will be described.
  • FIG. 4 is a perspective view showing a configuration of a related semiconductor device.
  • the printed circuit board 6 is opened in a region surrounded by a broken line.
  • the signal line 8 does not surround the entire circumference of all the protruding portions with respect to the protruding portions of the plurality of collector main terminals 4 and the protruding portions of the plurality of emitter main terminals 5. This point is different from the power semiconductor device according to the first embodiment.
  • FIG. 5 is a diagram showing waveforms of signals of the related semiconductor device
  • FIG. 6 is a diagram showing waveforms of signals of the power semiconductor device according to the first embodiment.
  • the signal lines 8 (gate signal lines 8a and emitter signal lines 8b) are wired to the printed circuit board 6, the signal lines 8 can be easily formed (wired).
  • the signal line 8 surrounding the entire circumference of the protruding portions of the collector main terminal 4 and the emitter main terminal 5 includes both the gate signal line 8a and the emitter signal line 8b.
  • the signal line 8 is not limited to this, and the signal line 8 may include one of the gate signal line 8a and the emitter signal line 8b.
  • FIG. 7 shows a configuration in which the signal line 8 includes the gate signal line 8a without including the emitter signal line 8b.
  • the effect of the first embodiment can also be obtained to some extent by such a configuration of the present modification.
  • the signal line 8 includes both the gate signal line 8a and the emitter signal line 8b as in the first embodiment.
  • FIG. 8 is a cross-sectional perspective view schematically showing a partial configuration of the power semiconductor device according to the second embodiment of the present invention. Note that, in the power semiconductor device according to the second embodiment, the same or similar components as those described above are denoted by the same reference numerals, and different portions will be mainly described.
  • the emitter signal line 8b which is the ground potential, is formed on the printed circuit board 6 with a solid pattern (substantially covering all one main surface of the printed circuit board 6). Yes.
  • the influence of the electromagnetic induction which the main current which flows into the collector main terminal 4 and the emitter main terminal 5 gives to the signal line 8 can be suppressed by the shielding effect of the emitter signal line 8b.
  • the effect of suppressing the vibration of the waveform of the gate signal can be enhanced.
  • the gate signal line 8a is also formed in a solid pattern, the effect of suppressing the vibration of the waveform of the gate signal can be similarly enhanced.
  • the gate signal line 8a and the emitter signal line 8b are formed of flat plates that are parallel to each other, and form a parallel plate structure (multilayer wiring structure) with the printed circuit board 6 interposed therebetween.
  • both the gate signal line 8a and the emitter signal line 8b are formed in a solid pattern.
  • the present invention is not limited to this, and one of the gate signal line 8a and the emitter signal line 8b may be formed with a solid pattern and the other may not be formed with a solid pattern.
  • the effect of the second embodiment can be obtained to some extent also by such a configuration of the present modification.
  • both the gate signal line 8a and the emitter signal line 8b are formed in a solid pattern as in the second embodiment.
  • the collector main terminal 4 may be coated with an insulating resin. According to such a configuration, the distance (gap) between the signal line 8 and the collector main terminal 4 can be shortened (for example, less than 3.0 mm) while maintaining the breakdown voltage of the power semiconductor device. Therefore, it is possible to reduce the size of the apparatus.
  • the present invention can be freely combined with each embodiment and each modification within the scope of the invention, or can be appropriately modified and omitted with each embodiment and each modification.
  • 2g power semiconductor chip 4 collector main terminal, 5 emitter main terminal, 6 printed circuit board, 8 signal line, 8a gate signal line, 8b emitter signal line.

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Abstract

　ゲート信号の波形の振動を抑制可能な技術を提供することを目的とする。電力用半導体装置は、パワー半導体チップ２ｇと、パワー半導体チップ２ｇと電気的に接続された複数のコレクタ主端子４及び複数のエミッタ主端子５と、信号線８とを備える。複数のコレクタ主端子４及び複数のエミッタ主端子５は、パワー半導体チップ２ｇの配設面から突出する突出部分を有し、信号線８は、それら突出部分に対して、全ての突出部分の全周を囲い、かつ平面視において離間する。

Description

電力用半導体装置
　本発明は、半導体スイッチ素子を備える電力用半導体装置に関する。
　半導体スイッチ素子を備える電力用半導体装置（パワー半導体装置）が、インバータやコンバータ等に適用されている（例えば特許文献１）。
特開２００１－１８５６７９号公報
　電力用半導体装置では、ターンオフのスイッチ直後において、ゲート信号の波形に振動が生じる。この振動現象の発生メカニズムは完全に解明されていないが、このようなゲート信号の波形における振動は、電力用半導体装置の誤動作を招く可能性があることから、当該振動現象を抑制することが求められている。
　そこで、本発明は、上記のような問題点を鑑みてなされたものであり、ゲート信号の波形の振動を抑制可能な技術を提供することを目的とする。
　本発明に係る電力用半導体装置は、半導体スイッチ素子と、前記半導体スイッチ素子と電気的に接続され、前記半導体スイッチ素子の配設面から突出する突出部分を有する複数のコレクタ主端子及び複数のエミッタ主端子と、前記複数のコレクタ主端子の前記突出部分、及び、前記複数のエミッタ主端子の前記突出部分に対して、全ての前記突出部分の全周を囲い、かつ平面視において離間する信号線とを備える。
　本発明によれば、ゲート信号の波形の振動を抑制することができる。
　本発明の目的、特徴、態様および利点は、以下の詳細な説明と添付図面とによって、より明白となる。
実施の形態１に係る電力用半導体装置の構成を示す斜視図である。 実施の形態１に係る電力用半導体装置の部分構成を模式的に示す断面斜視図である。 実施の形態１に係る電力用半導体装置の部分構成を模式的に示す断面斜視図である。 関連半導体装置の構成を示す斜視図である。 関連半導体装置の各信号の波形を示す図である。 実施の形態１に係る電力用半導体装置の各信号の波形を示す図である。 実施の形態１の変形例に係る電力用半導体装置の部分構成を模式的に示す断面斜視図である。 実施の形態２に係る電力用半導体装置の部分構成を模式的に示す断面斜視図である。
　＜実施の形態１＞
　図１は、本発明の実施の形態１に係る電力用半導体装置の構成を示す斜視図であり、図２及び図３は、図１のＡ－Ａ線及びＢ－Ｂ線に沿った断面斜視図である。なお、図２及び図３では、理解を容易にするために、図１の電力用半導体装置の構成要素の一部の図示を省略したり、図１のゲート信号電極３ｄ及びエミッタ信号電極３ｅの配置を変更したりしている。
　本実施の形態１に係る電力用半導体装置は、図１に示される放熱用ベース板１、複数のチップ搭載基板２、複数の信号電極部３、複数のコレクタ主端子４、複数のエミッタ主端子５、プリント基板６と、図２に示されるエミッタワイヤ７ａ、ゲート信号ワイヤ７ｂ、エミッタ信号ワイヤ７ｃと、図３に示される信号線８とを備えている。
　複数のチップ搭載基板２及び複数の信号電極部３は、金属からなる放熱用ベース板１の主面上に配設されている。
　各チップ搭載基板２は、図２に示されるはんだ２ａ、金属電極２ｂ、絶縁基板２ｃ（例えばセラミック基板）、コレクタ電極２ｄ、エミッタ電極２ｅ、はんだ２ｆ及びパワー半導体チップ２ｇを含んでいる。
　はんだ２ａ、金属電極２ｂ及び絶縁基板２ｃは、この順に放熱用ベース板１の主面上に配設されている。コレクタ電極２ｄ及びエミッタ電極２ｅは、絶縁基板２ｃの主面上に配設されている。パワー半導体チップ２ｇは、はんだ２ｆによってコレクタ電極２ｄと接合されている。
　本実施の形態１では、パワー半導体チップ２ｇは、例えば、炭化珪素（ＳｉＣ）、窒化ガリウム（ＧａＮ）またはダイヤモンドなどのワイドバンドギャップ半導体から構成されており、図示しない半導体モジュールに搭載されている。そして、パワー半導体チップ２ｇには、例えばＩＧＢＴ（Insulated Gate Bipolar Transistor）などの図示しない半導体スイッチ素子と、図示しないダイオードとが含まれる。
　各信号電極部３は、図２に示されるはんだ３ａ、金属電極３ｂ、絶縁基板３ｃ（例えばセラミック基板）、ゲート信号電極３ｄ及びエミッタ信号電極３ｅを含んでいる。
　はんだ３ａ、金属電極３ｂ及び絶縁基板３ｃは、この順に放熱用ベース板１の主面上に配設されている。ゲート信号電極３ｄ及びエミッタ信号電極３ｅは、絶縁基板３ｃの主面上に配設されており、かつ当該配設面から突出してプリント基板６まで達する突出部分を有している。
　パワー半導体チップ２ｇは、エミッタワイヤ７ａを介してエミッタ電極２ｅと電気的に接続され、ゲート信号ワイヤ７ｂを介してゲート信号電極３ｄと電気的に接続され、エミッタ信号ワイヤ７ｃを介してエミッタ信号電極３ｅと電気的に接続されている。
　各コレクタ主端子４は、コレクタ電極２ｄを介してパワー半導体チップ２ｇ（半導体スイッチ素子）と電気的に接続されており、かつパワー半導体チップ２ｇ（半導体スイッチ素子）の配設面から突出する突出部分を有している。なお、本実施の形態１では、パワー半導体チップ２ｇの配設面は、絶縁基板２ｃの主面に対応している。
　各エミッタ主端子５は、エミッタワイヤ７ａ及びエミッタ電極２ｅを介してパワー半導体チップ２ｇ（半導体スイッチ素子）と電気的に接続されており、かつパワー半導体チップ２ｇ（半導体スイッチ素子）の配設面から突出する突出部分を有している。以上のような構成により、コレクタ主端子４及びエミッタ主端子５は、パワー半導体チップ２ｇに並列接続されている。
　コレクタ主端子４及びエミッタ主端子５の数は、複数であればよく、図１に示すように３つずつに限ったものではない。なお、１ｉｎ１（１モジュール内に１素子）のパッケージでは、２つずつのコレクタ主端子４及びエミッタ主端子５、または、３つずつのコレクタ主端子４及びエミッタ主端子５を半導体スイッチ素子に接続して、それら端子に並列電流を流す構造が取られることが多い。
　プリント基板６は、パワー半導体チップ２ｇの配設面上方に、当該配設面と平行に配設されており、図１及び図３に示すように平面視四角形状を有する複数の穴６ａが設けられている。そして、各穴６ａには、１組のコレクタ主端子４及びエミッタ主端子５の突出部分が遊嵌されている。このような構成により、プリント基板６は、複数のコレクタ主端子４の突出部分、及び、複数のエミッタ主端子５の突出部分に対して、全ての突出部分の全周を囲い、かつ平面視において離間している。
　信号線８は、図３に示すように、ゲート信号線８ａ及びエミッタ信号線８ｂを含んでおり、プリント基板６に配線されている。なお、図３では、ゲート信号線８ａはプリント基板６の上面に配線され、エミッタ信号線８ｂはプリント基板６の裏面に配線されているが、これに限ったものではなく、例えば、ゲート信号線８ａ及びエミッタ信号線８ｂの両方が、プリント基板６の上面及び裏面のいずれか一方にまとめて配線されてもよい。
　信号線８（ゲート信号線８ａ及びエミッタ信号線８ｂ）は、プリント基板６と同様に、複数のコレクタ主端子４の突出部分、及び、複数のエミッタ主端子５の突出部分に対して、全ての突出部分の全周を囲い、かつ平面視において離間している。なお、信号線８（ゲート信号線８ａ及びエミッタ信号線８ｂ）と、複数のコレクタ主端子４及び複数のエミッタ主端子５のそれぞれとの間の距離（間隙）は、電力用半導体装置に求められる耐圧及びサイズを考慮して決定される。例えば、この距離（間隙）は、３．３ｋＶ以上の耐圧を有する電力用半導体装置では、パッケージの極端な大型を避ける観点から３．０～３０．０ｍｍ程度とすることが好ましい。なお、この数値の算出には、空気の絶縁耐圧を３ｋＶ／ｍｍと仮定している。
　ゲート信号線８ａは、ゲート信号電極３ｄなどを介してパワー半導体チップ２ｇ（半導体スイッチ素子）と電気的に接続され、エミッタ信号線８ｂは、エミッタ信号電極３ｅなどを介してパワー半導体チップ２ｇ（半導体スイッチ素子）と電気的に接続されている。
　次に、以上のように構成された本実施の形態１に係る電力用半導体装置の効果について説明する前に、それと関連する電力用半導体装置（以下「関連半導体装置」と記す）について説明する。
　図４は、関連半導体装置の構成を示す斜視図である。図４に示すように、関連半導体装置は、破線で囲まれる領域において、プリント基板６が開放されている。このため、関連半導体装置では、信号線８が、複数のコレクタ主端子４の突出部分、及び、複数のエミッタ主端子５の突出部分に対して、全ての突出部分の全周を囲っておらず、この点が実施の形態１に係る電力用半導体装置と異なっている。
　次に、本実施の形態１に係る電力用半導体装置及び関連半導体装置について、ターンオフスイッチ直後の各信号の波形を調べた。図５は、関連半導体装置の各信号の波形を示す図であり、図６は、本実施の形態１に係る電力用半導体装置の各信号の波形を示す図である。
　＜効果＞
　図５及び図６に示す結果から分かるように、関連半導体装置では、ゲート信号の波形に振動が生じているが、本実施の形態１に係る電力用半導体装置では、ゲート信号の波形において振動を抑制することができる。したがって、本実施の形態１によれば、信頼性の高い電力用半導体装置を実現することができる。
　特に、ＳｉＣなどのワイドバンドギャップ半導体からなるデバイスでは、このような振動現象が発現しやすいことから、上記効果は有効である。
　また、本実施の形態１では、信号線８（ゲート信号線８ａ及びエミッタ信号線８ｂ）は、プリント基板６に配線されるので、信号線８の形成（配線）を容易に行うことができる。
　＜変形例＞
　実施の形態１では、コレクタ主端子４及びエミッタ主端子５の突出部分の全周を囲う信号線８は、ゲート信号線８ａ及びエミッタ信号線８ｂの両方を含んでいた。しかしこれに限ったものではなく、当該信号線８は、ゲート信号線８ａ及びエミッタ信号線８ｂのいずれか一方を含むものであってもよい。図７に、信号線８が、エミッタ信号線８ｂを含まずに、ゲート信号線８ａを含む構成を示す。
　このような本変形例の構成によっても、実施の形態１の効果をある程度得ることができる。ただし、ゲート信号の波形の振動を抑制する効果を高める観点からは、実施の形態１のように、信号線８が、ゲート信号線８ａ及びエミッタ信号線８ｂの両方を含むことが好ましい。
　＜実施の形態２＞
　図８は、本発明の実施の形態２に係る電力用半導体装置の部分構成を模式的に示す断面斜視図である。なお、本実施の形態２に係る電力用半導体装置において、以上で説明した構成要素と同一または類似するものについては同じ参照符号を付し、異なる部分について主に説明する。
　図８に示すように、本実施の形態２では、接地電位であるエミッタ信号線８ｂが、プリント基板６にベタパターン（プリント基板６の一方の主面全部を実質的に覆う）で形成されている。これにより、コレクタ主端子４及びエミッタ主端子５に流れる主電流が信号線８に与える電磁誘導の影響を、エミッタ信号線８ｂのシールド効果によって抑制することができる。この結果、ゲート信号の波形の振動を抑制する効果を高めることができる。また、本実施の形態２では、ゲート信号線８ａもベタパターンで形成されているので、ゲート信号の波形の振動を抑制する効果を同様に高めることができる。
　さらに、本実施の形態２では、ゲート信号線８ａ及びエミッタ信号線８ｂが互いに平行な平板からなり、それらがプリント基板６を挟んで平行平板構造（多層配線構造）を形成している。これにより、信号線８のインダクタンスを低減することができるので、コレクタ主端子４及びエミッタ主端子５に流れる主電流が信号線８に与える電磁誘導の影響を抑制することができる。この結果、ゲート信号の波形の振動を抑制する効果をより高めることができる。
　＜変形例＞
　実施の形態２では、ゲート信号線８ａ及びエミッタ信号線８ｂの両方がベタパターンで形成されていた。しかしこれに限ったものではなく、ゲート信号線８ａ及びエミッタ信号線８ｂの一方がベタパターンで形成され、他方がベタパターンで形成されない構成であってもよい。
　このような本変形例の構成によっても、実施の形態２の効果をある程度得ることができる。ただし、ゲート信号の波形の振動を抑制する効果を高める観点からは、実施の形態２のように、ゲート信号線８ａ及びエミッタ信号線８ｂの両方がベタパターンで形成されることが好ましい。
　また、コレクタ主端子４には、他の構成要素よりも比較的高い電圧が印加されることが想定される。このことを鑑みて、コレクタ主端子４に、絶縁性を有する樹脂がコーティングされてもよい。このような構成によれば、電力用半導体装置の耐圧を維持しつつ、信号線８とコレクタ主端子４との間の距離（間隙）を短くする（例えば３．０ｍｍ未満にする）ことができるので、装置の小型化を実現することができる。
　なお、本発明は、その発明の範囲内において、各実施の形態及び各変形例を自由に組み合わせたり、各実施の形態及び各変形例を適宜、変形、省略したりすることが可能である。
　本発明は詳細に説明されたが、上記した説明は、すべての態様において、例示であって、本発明がそれに限定されるものではない。例示されていない無数の変形例が、本発明の範囲から外れることなく想定され得るものと解される。
　２ｇ　パワー半導体チップ、４　コレクタ主端子、５　エミッタ主端子、６　プリント基板、８　信号線、８ａ　ゲート信号線、８ｂ　エミッタ信号線。

Claims (7)

  1. 　半導体スイッチ素子と、
    　前記半導体スイッチ素子と電気的に接続され、前記半導体スイッチ素子の配設面から突出する突出部分を有する複数のコレクタ主端子及び複数のエミッタ主端子と、
    　前記複数のコレクタ主端子の前記突出部分、及び、前記複数のエミッタ主端子の前記突出部分に対して、全ての前記突出部分の全周を囲い、かつ平面視において離間する信号線と
    を備える、電力用半導体装置。
  2. 　請求項１に記載の電力用半導体装置であって、
    　前記信号線は、
    　前記半導体スイッチ素子と電気的に接続されたゲート信号線及びエミッタ信号線の少なくともいずれか１つを含む、電力用半導体装置。
  3. 　請求項２に記載の電力用半導体装置であって、
    　前記信号線は、前記ゲート信号線及び前記エミッタ信号線を含み、
    　前記ゲート信号線及び前記エミッタ信号線が互いに平行な平板からなる、電力用半導体装置。
  4. 　請求項１から請求項３のうちいずれか１項に記載の電力用半導体装置であって、
    　前記配設面上方に配設されたプリント基板
    をさらに備え、
    　前記信号線は、前記プリント基板に配線されている、電力用半導体装置。
  5. 　請求項１から請求項３のうちいずれか１項に記載の電力用半導体装置であって、
    　前記コレクタ主端子には、絶縁性を有する樹脂がコーティングされている、電力用半導体装置。
  6. 　請求項２に記載の電力用半導体装置であって、
    　前記配設面上方に配設されたプリント基板
    をさらに備え、
    　前記ゲート信号線及びエミッタ信号線の少なくともいずれか１つが、前記プリント基板にベタパターンで形成されている、電力用半導体装置。
  7. 　請求項１から請求項３のうちいずれか１項に記載の電力用半導体装置であって、
    　前記半導体スイッチ素子は、
    　半導体モジュールに搭載された、ワイドバンドギャップ半導体からなる半導体チップに含まれる、電力用半導体装置。
PCT/JP2014/067950 2014-07-04 2014-07-04 電力用半導体装置 WO2016002077A1 (ja)

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CN201480080396.3A CN106663675B (zh) 2014-07-04 2014-07-04 电力用半导体装置
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000217337A (ja) * 1999-01-25 2000-08-04 Toshiba Corp 半導体装置及び電力変換装置
WO2002082541A1 (fr) * 2001-04-02 2002-10-17 Mitsubishi Denki Kabushiki Kaisha Dispositif a semi-conducteur a puissance
JP2010041809A (ja) * 2008-08-04 2010-02-18 Hitachi Ltd 車両用電力変換装置、パワーモジュール用金属ベースおよびパワーモジュール

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1146988C (zh) * 1997-12-08 2004-04-21 东芝株式会社 半导体功率器件的封装及其组装方法
JP4138192B2 (ja) 1999-12-27 2008-08-20 三菱電機株式会社 半導体スイッチ装置
JP5125269B2 (ja) * 2007-07-11 2013-01-23 三菱電機株式会社 パワー半導体モジュール
JP5206188B2 (ja) 2008-07-15 2013-06-12 三菱電機株式会社 半導体装置
JP5207862B2 (ja) 2008-07-16 2013-06-12 三菱電機株式会社 半導体モジュール
US8907477B2 (en) * 2010-01-05 2014-12-09 Fuji Electric Co., Ltd. Unit for semiconductor device and semiconductor device
JP2013183022A (ja) * 2012-03-01 2013-09-12 Toyota Industries Corp 半導体装置および半導体装置の製造方法
JP5915350B2 (ja) * 2012-04-19 2016-05-11 富士電機株式会社 パワー半導体モジュール

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000217337A (ja) * 1999-01-25 2000-08-04 Toshiba Corp 半導体装置及び電力変換装置
WO2002082541A1 (fr) * 2001-04-02 2002-10-17 Mitsubishi Denki Kabushiki Kaisha Dispositif a semi-conducteur a puissance
JP2010041809A (ja) * 2008-08-04 2010-02-18 Hitachi Ltd 車両用電力変換装置、パワーモジュール用金属ベースおよびパワーモジュール

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