JP5125269B2 - パワー半導体モジュール - Google Patents
パワー半導体モジュール Download PDFInfo
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- JP5125269B2 JP5125269B2 JP2007182214A JP2007182214A JP5125269B2 JP 5125269 B2 JP5125269 B2 JP 5125269B2 JP 2007182214 A JP2007182214 A JP 2007182214A JP 2007182214 A JP2007182214 A JP 2007182214A JP 5125269 B2 JP5125269 B2 JP 5125269B2
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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Description
図1は本実施形態のパワー半導体モジュールを説明するための断面図である。本実施形態のパワー半導体モジュールはベース板10を備える。ベース板10は後述する諸々の部品を搭載するものである。ベース板は例えばCu、AlSiC、Cu-Moなどの材料で形成される。ベース板10の表面にはNiメッキが施されている。そしてベース板10の、後述する絶縁メタライズ基板を搭載すべき面にはレジストが塗布されている。
ベース板10には絶縁メタライズ基板12が搭載される。絶縁メタライズ基板12は、チップなどから電流・電気信号を取り出すために表面に金属の配線を備える。そして本実施形態の絶縁メタライズ基板12は、セラミック基板の両面にAl又はCuなどの配線パターンが装着されている。絶縁メタライズ基板12はパワー半導体モジュールの規模に合わせて複数搭載される事がある。なお、絶縁メタライズ基板12は、エミッタ端子接合部、コレクタ端子接合部、ゲート端子接合部を備えるが、図1では説明の便宜上一体のものとして示している。
本実施形態はゲートパターンにコイルが実装されコイルの終端には抵抗を備えるパワー半導体モジュールに関する。本実施形態の構成は実施形態1の構成に加えて、コイルと抵抗、それらを所定の位置に接続するための配線を備えている。本実施形態のパワー半導体モジュールは前述した以外の点において実施形態1の構成と同様である。なお、本実施形態の構成を説明する図13では、誘導発生用パターン34の先端に配置される外部電極接続端子挿入孔に挿入された接続ピン54を示している。以後、本実施形態の構成が実施形態1の構成と相違する点をより詳細に説明する。
e=dΦ/dt=M・(dI/dt)=L・(di/dt)+R・i(式1)
式1において、e=誘導起電圧[V]、L=ロゴスキーコイル50の自己インダクタンス[H]、R=抵抗[Ω]、I=ロゴスキーコイル50を貫く電流[A]、M=誘導係数、Φ=鎖交磁束数、i=電流Iによってコイル50に誘導された電流をそれぞれ表す。
本実施形態は主電極端子にロゴスキーコイルが実装されロゴスキーコイルの終端には抵抗を備えるパワー半導体モジュールに関する。図15に本実施形態の特徴を説明するための図を示す。図15はゲートパターン37、誘導発生用パターン34、接続ピン54、主電極端子20、主電極端子接続用開口部35、主電極用ロゴスキーコイル52の斜視図である。本実施形態の主電極用ロゴスキーコイル52は主電極端子20を取り巻くように配置されている点において実施形態2と相違する。しかし以下の2点においては実施形態2と同様である。1点目はロゴスキーコイルと並列に抵抗が接続される点である。2点目はロゴスキーコイルの一端でプラス電位が誘起される部分は接続ピン54と接続され、ロゴスキーコイル50の他端でマイナス電位が誘起される部分はエミッタパターンと接続される点である。本実施形態はロゴスキーコイル52とそれに接続される抵抗、配線等を除けば、実施形態2の構成と同様の構成である。
22 配線回路基板
24 ゲートパターン層
28 エミッタパターン層
30 エミッタパターン層
34 誘導発生用パターン
50 ロゴスキーコイル
52 主電極用ロゴスキーコイル
Claims (6)
- パワー半導体素子のコレクタ−エミッタ間電流が流れる主電極端子と、
パワー半導体素子の電気的な制御を行う、前記主電極端子と近接した場所に配置される
配線回路基板とを備え、
前記配線回路基板は、
パワー半導体素子のエミッタに接続されるエミッタパターンと、
パワー半導体素子のゲートに接続されるゲートパターンとを備え、
前記ゲートパターンは、前記エミッタパターンによりシールドされず前記主電極端子の
電流の流れる方向と平行方向に伸びる誘導発生用パターンとを有する事を特徴とするパワ
ー半導体モジュール。 - 前記誘導発生用パターンは複数の相互に平行に伸びる直線状のパターンを備える事を特
徴とする請求項1に記載のパワー半導体モジュール。 - 前記ゲートパターンの一部を取り巻くように配置されるコイルを備え、
前記コイルは一端が前記エミッタパターンに接続され、他端が前記ゲートパターンに接
続される事を特徴とする請求項1又は2に記載のパワー半導体モジュール。 - 前記コイルは前記誘導発生用パターンの一部を取り巻くように配置される事を特徴とす
る請求項3に記載のパワー半導体モジュール。 - 前記主電極端子の一部を取り巻くように配置される主電極用コイルを備え、
前記主電極用コイルは一端が前記エミッタパターンに接続され、他端が前記ゲートパタ
ーンに接続される事を特徴とする請求項1に記載のパワー半導体モジュール。 - 一端が前記エミッタパターンに接続され、他端が前記ゲートパターンに接続された抵抗
素子を備える事を特徴とする請求項3〜5のいずれかに記載のパワー半導体モジュール。
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JP2009021345A JP2009021345A (ja) | 2009-01-29 |
JP5125269B2 true JP5125269B2 (ja) | 2013-01-23 |
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Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5953790B2 (ja) * | 2011-10-12 | 2016-07-20 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
US10186607B2 (en) | 2014-07-04 | 2019-01-22 | Mitsubishi Electric Corporation | Power semiconductor device including a semiconductor switching element |
JP6658876B2 (ja) * | 2016-05-19 | 2020-03-04 | 富士電機株式会社 | 絶縁ゲート型半導体装置及び絶縁ゲート型半導体装置の製造方法 |
EP3321959A1 (en) | 2016-11-10 | 2018-05-16 | ABB Schweiz AG | Power semiconductor module |
US11063025B2 (en) * | 2017-09-04 | 2021-07-13 | Mitsubishi Electric Corporation | Semiconductor module and power conversion device |
JP6838243B2 (ja) | 2017-09-29 | 2021-03-03 | 日立Astemo株式会社 | 電力変換装置 |
WO2019181198A1 (ja) * | 2018-03-20 | 2019-09-26 | 富士電機株式会社 | 半導体装置 |
DE112021000083T5 (de) * | 2020-03-18 | 2022-04-21 | Fuji Electric Co., Ltd. | Elektrischer schaltkreis und halbleitermodul |
Family Cites Families (5)
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JP2854757B2 (ja) * | 1992-06-17 | 1999-02-03 | 三菱電機株式会社 | 半導体パワーモジュール |
JPH0621330A (ja) * | 1992-06-30 | 1994-01-28 | Mitsubishi Electric Corp | 半導体パワーモジュール |
JPH09322559A (ja) * | 1996-05-31 | 1997-12-12 | Aisin Aw Co Ltd | モータ駆動装置 |
JP3480811B2 (ja) * | 1997-07-15 | 2003-12-22 | 株式会社東芝 | 電圧駆動型電力用半導体装置 |
JP4138192B2 (ja) * | 1999-12-27 | 2008-08-20 | 三菱電機株式会社 | 半導体スイッチ装置 |
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