JP5876970B2 - 複数のパワートランジスタを搭載するための基板、およびパワー半導体モジュール - Google Patents
複数のパワートランジスタを搭載するための基板、およびパワー半導体モジュール Download PDFInfo
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Description
本発明は、複数のパワートランジスタを上に搭載するための基板、および、このような基板およびパワートランジスタを含むパワー半導体モジュールの分野に関する。
パワー半導体モジュールは、高電圧および高電流を切替えるための高電力用途で用いられ、複数のパワー半導体を含む。各々の単一の半導体が最大電圧および最大電流を有しているので、パワー半導体は、高電力用途で使用できるようにするために、パワー半導体モジュール内において並列および/または直列に組合わされなければならない。このようなモジュールの製造を容易にするために、これらモジュールは、一般に、パワー半導体が上に搭載されている複数の基板を含む。これら基板は、エミッタ、コレクタおよびベース用の共通の接点を備えているため、パワー半導体モジュール内において容易に接続することができる。
本発明の目的は、高電流の高電力用途で使用するのに好適であり、小型であり、容易かつ経済的に搭載可能である上述の種類の基板およびパワー半導体モジュールを提供することである。
本発明のこれらおよび他の局面が以下に記載される実施形態から明らかになり、これら実施形態を参照して説明されるだろう。
図2は第1の実施形態に従った基板1を示す。基板1は、U字形に設けられた第1の金属被覆3を含む。したがって、第1の金属被覆3は、基板1の両側の端縁7に沿って、かつ両側の端縁7を接続する1つの接続端縁8に沿って延在する2本の相互接続されたライン5に延在する。
3 第1の金属被覆
5 ライン
7 端縁
8 接続端縁
9 第2の金属被覆
11 ライン間における区域
13 第3の金属被覆
15 ゲートコンタクト
16 ゲート金属被覆区域、ゲートアイランド
17 ゲート区域
18 ゲート金属被覆区域、ゲート半島
19 ボンディングワイヤ
20 脚部
21 パワートランジスタ、RC−IGBT
22 間隔
23 エミッタパッド
24 接続区域
25 ゲートパッド
30 パワートランジスタ、IGBT
32 パワーダイオード
34 コンタクトパッド
40 レジスタ
42 第4の金属被覆
44 区域
46 第5の金属被覆
48 相互接続区域
50 第1のスイッチ
52 第2のスイッチ。
Claims (11)
- 複数のパワートランジスタ(21,30)が上に搭載された基板(1)であって、
第1の金属被覆(3)を含み、第1の金属被覆(3)の上には、パワートランジスタ(21,30)がそれらのコレクタまたはエミッタで共通に搭載可能であり、第1の金属被覆(3)は、基板(1)上の少なくとも1本のライン(5)に延在し、前記基板(1)はさらに、
第2の金属被覆(9)を含み、第2の金属被覆(9)は、パワートランジスタ(21,30)のエミッタまたはコレクタのうち残りの一方への接続のために、第1の金属被覆(3)の少なくとも1本のライン(5)に隣接する区域(11)において延在し、前記基板(1)はさらに、
パワートランジスタ(21,30)のゲートコンタクトパッド(25)への接続のための第3の金属被覆(13)を含み、
第3の金属被覆(13)は、接着手段(19)によって相互接続可能である少なくとも2つのゲート金属被覆区域(16,18)を含み、
ゲート金属被覆区域(16,18)は少なくとも1本のライン(5)に対して平行に配置され、少なくとも1本のライン(5)の長手方向において間隔を空けて配置され、
少なくとも1つのゲート金属被覆区域は、基板(1)上において第2の金属被覆(9)によって囲まれたゲートアイランド(16)として設けられ、
第2の金属被覆(9)は、その上にそれらのコレクタまたはエミッタで複数のパワートランジスタ(21,30)が搭載されるよう適合され、パワートランジスタ(21,30)は、第1の金属被覆(3)上に搭載されたパワートランジスタ(21,30)と同じ配向を有し、
基板(1)は第4の金属被覆(42)を含み、第4の金属被覆(42)は、第2の金属被覆(9)上に搭載可能なパワートランジスタ(21,30)のエミッタまたはコレクタのうち残りの一方への接続のために、第2の金属被覆(9)に隣接する区域(44)において延在し、前記基板(1)はさらに、
第2の金属被覆(9)上に搭載可能なパワートランジスタ(21,30)のゲートコンタクトパッド(25)への接続のための第5の金属被覆(46)を含み、
第5の金属被覆(46)は、接着手段(19)によって相互接続可能である少なくとも2つのゲート金属被覆区域(16,18)を含み、
ゲート金属被覆区域(16,18)は少なくとも1本のライン(5)に対して平行に配置され、少なくとも1本のライン(5)の長手方向において間隔を空けて配置され、少なくとも1つのゲート金属被覆区域が、基板(1)上において第4の金属被覆(42)によって囲まれたゲートアイランド(16)として設けられる、基板(1)。 - 第3の金属被覆(13)は、接着手段(19)によって少なくとも2つのゲート金属被覆区域(16,18)と相互接続可能であるゲートコンタクト(15)を含む、請求項1に記載の基板(1)。
- 少なくとも1本のライン(5)の長手方向における少なくとも1つのゲートアイランド(16)の長さは、その方向へのパワートランジスタ(21,30)の延在部よりも短い、請求項1または2に記載の基板(1)。
- 第1の金属被覆(3)の少なくとも1本のライン(5)に対して垂直な方向における少なくとも1つのゲートアイランド(16)のサイズは0.5mm〜3.0mm、好ましくは1.0mm〜2.0mmである、請求項1から3のいずれかに記載の基板(1)。
- 少なくとも2つのゲート金属被覆区域(16,18)は、第2の金属被覆(9)において、第1の金属被覆(3)の少なくとも1本のライン(5)に垂直な方向に対して中心に位置する、請求項1から4のいずれかに記載の基板(1)。
- 少なくとも2つのゲート金属被覆区域(16,18)は各々、0.5mmから2.0mmの幅の間隔(22)だけ第2の金属被覆(9)から分離される、請求項1から5のいずれかに記載の基板(1)。
- 1つのゲート金属被覆区域が、基板(1)上において基板(1)の第2の金属被覆(9)および端縁(8)によって囲まれるゲート半島(18)として設けられる、請求項1から6のいずれかに記載の基板(1)。
- 第2の金属被覆(9)はL字形に設けられ、基板(1)の接続区域(24)を通って延在する、請求項1から7のいずれかに記載の基板(1)。
- レジスタ(40)はゲートコンタクト(15)上に設けられ、ゲートコンタクト(15)に接続され、ゲート金属被覆区域(16,18)はレジスタ(40)を介してゲートコンタクト(15)に接着される、請求項1から8のいずれかに記載の基板(1)。
- 請求項1から9のいずれかに記載の少なくとも1つの基板(1)を含むパワー半導体モジュールであって、
複数のパワートランジスタ(21,30)は、それらのコレクタまたはエミッタで、少なくとも1つの基板(1)の第1の金属被覆(3)上において共通に搭載され、
パワートランジスタ(21,30)のエミッタまたはコレクタのうち残りの一方は第2の金属被覆(9)に接続され、
パワートランジスタ(21,30)のゲートパッド(25)は第3の金属被覆(13)に接続され、
ゲートコンタクト(15)および少なくとも2つのゲート金属被覆区域(16,18)は接着手段(19)によって相互に接続される、パワー半導体モジュール。 - 請求項1から9のいずれかに記載の少なくとも1つの基板が設けられ、
複数のパワートランジスタ(21,30)が、それらのコレクタまたはエミッタで第2の金属被覆(9)上に共通に搭載され、
パワートランジスタ(21,30)のエミッタまたはコレクタのうち残りの一方は、第4の金属被覆()に接続され、
パワートランジスタ(21,30)のゲートパッド(25)は第5の金属被覆(13)に接続され、
ゲートコンタクト(15)および少なくとも2つのゲート金属被覆区域(16,18)は接着手段(19)によって相互に接続される、請求項10に記載のパワー半導体モジュール。
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