WO2015178369A1 - ダイボンドダイシングシート - Google Patents
ダイボンドダイシングシート Download PDFInfo
- Publication number
- WO2015178369A1 WO2015178369A1 PCT/JP2015/064302 JP2015064302W WO2015178369A1 WO 2015178369 A1 WO2015178369 A1 WO 2015178369A1 JP 2015064302 W JP2015064302 W JP 2015064302W WO 2015178369 A1 WO2015178369 A1 WO 2015178369A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- adhesive layer
- dicing sheet
- die bond
- support member
- base material
- Prior art date
Links
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- 239000004065 semiconductor Substances 0.000 claims abstract description 95
- 239000010410 layer Substances 0.000 claims abstract description 50
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- 238000000034 method Methods 0.000 claims abstract description 47
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- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
Definitions
- the present invention relates to a die bond dicing sheet that can be suitably used when manufacturing a semiconductor device.
- silver paste has been mainly used for joining a semiconductor chip and a support member such as a lead frame.
- a support member such as a lead frame.
- miniaturization and miniaturization have been demanded for lead frames used.
- defects tend to occur during wire bonding due to sticking out of the paste or inclination of the semiconductor chip.
- there is a limit in dealing with the above-described demand using silver paste because of the difficulty in controlling the film thickness of the adhesive layer and the tendency for voids to occur in the adhesive layer.
- typical manufacturing steps include the following (1) to (3).
- (1) A piece of the adhesive film is cut out from the roll (reel) adhesive film by cutting or punching. Next, the individual pieces are attached to the lead frame.
- (2) An element piece (semiconductor chip) cut and separated (diced) in advance in a dicing process is placed on the obtained lead frame with an adhesive film.
- a lead frame with a semiconductor chip is manufactured by bonding (die bonding) them.
- a wire bonding process and a sealing process are performed.
- such a method requires a dedicated assembling apparatus for cutting out pieces of the adhesive film from the roll-like adhesive film and further bonding the cut out pieces of adhesive film to the lead frame. Therefore, improvement is desired in that the manufacturing cost is higher than the method using silver paste.
- typical manufacturing steps include the following (1) to (3).
- An adhesive film is attached to the back surface of the semiconductor wafer, and a dicing tape is further attached to the adhesive film.
- a dicing process is performed, and the semiconductor wafer is separated into pieces with the adhesive film attached.
- Each piece of the obtained semiconductor chip with an adhesive film is picked up and attached to the lead frame.
- a step of curing the adhesive film by heating, a wire bonding step, a sealing step, and the like are performed.
- an apparatus for independently separating the adhesive film is not required.
- a “die bond dicing sheet” in which an adhesive film and a dicing tape are bonded together, or a sheet that can be used for both the dicing process and the die bond process is known.
- Patent Document 1 there is a die bond dicing sheet having a four-layer structure of base material / adhesive layer / adhesive layer / peelable sheet (for example, Patent Document 1).
- a disc-shaped adhesive layer (die bond material) 12 is formed on a peelable sheet 10, and the adhesive layer 12 is formed thereon.
- the sheet is produced by laminating a slightly larger disk-shaped pressure-sensitive adhesive layer 13 and further laminating a base material 14 having the same size and shape as the pressure-sensitive adhesive layer 13.
- the said adhesive layer 13 is comprised from a radiation-curing-type adhesive, and the expandability and pick-up property after a dicing process are favorable by maintaining the elasticity modulus after radiation curing in a predetermined range.
- a die bond dicing sheet having a three-layer structure of base material / adhesive layer / peelable sheet is also known.
- the stealth dicing method typically includes the following steps as shown in FIG. 2
- the illustration in FIG. 2 corresponds to the case where the above-described three-layer die-bonded dicing sheet is used.
- a normal semiconductor wafer 30 is irradiated with a laser to form a modified portion 30a inside the wafer (FIG. 2A).
- the peelable sheet 10 of the die bond dicing sheet is peeled to expose the adhesive layer 12 (FIG. 2B).
- a semiconductor device can be manufactured by the following processes. .
- the peelable sheet 10 of the die bond dicing sheet is peeled to expose a part of the adhesive layer 12 and the pressure-sensitive adhesive layer 13 (FIG. 3A).
- the exposed portion of the pressure-sensitive adhesive layer 13 has a belt-like annular shape and serves as a mounting area for the dicing ring.
- the dicing ring 40 is placed on the exposed portion of the pressure-sensitive adhesive layer 13, and the modified portion 30a is first laser-adhered to a predetermined position inside the ring (on the adhesive layer 12).
- the semiconductor wafer 30 on which is formed is placed (FIGS. 3B and 3C).
- the base material 14 and the pressure-sensitive adhesive layer 13 (dicing tape) are stretched to divide the semiconductor wafer 30 and the adhesive layer 12 at the same time, and with an adhesive layer.
- Semiconductor chips (12b and 30b) are manufactured (FIG. 3D).
- the semiconductor chip with an adhesive layer is picked up from the surface of the pressure-sensitive adhesive layer 13, placed on a lead frame, and heated and bonded (die-bonded). Subsequently, wire bonding is performed, and the semiconductor chip is sealed using a sealing material (not shown).
- the expanded division is performed on the semiconductor wafer (see FIGS. 3C and 3D) attached to the film-like adhesive layer, and the adhesive layer and the wafer are simultaneously formed.
- a part of the adhesive layer may be peeled off, resulting in a problem of adhering to the upper surface of the semiconductor wafer.
- This is called DAF (Die Attach Film) scattering. More specifically, as shown in FIG. 4, the DAF scattering is located outside the semiconductor wafer 30 and the portion 12c of the adhesive layer that is not in contact with the semiconductor wafer (FIG.
- Reference numeral 12c ′ denotes an adhesive layer that has been scattered and adhered to the top surface of the chip As described above, the chip to which the scattered adhesive layer has adhered cannot be picked up, and the productivity is lowered, so improvement is desired. ing.
- the present invention can improve the problems such as peeling of the adhesive layer from the pressure-sensitive adhesive layer during expansion, scattering of the adhesive layer, and adhesion to the semiconductor chip.
- the purpose is to provide a sheet.
- the present inventors have conducted various studies. As a result, the size of the adhesive layer is set to be the same as that of the semiconductor wafer or close to that of the semiconductor wafer. It was found that the adhesive layer could be prevented from scattering, and the present invention was completed.
- the present invention relates to the following matters.
- a die-bonded dicing sheet used by being attached to a semiconductor element mounting support member, a peelable first base material, and an adhesive layer provided on one side of the first base material, A pressure-sensitive adhesive layer that covers the entire top surface of the adhesive layer and has a peripheral edge that does not overlap the adhesive layer; and a second substrate provided on the top surface of the pressure-sensitive adhesive layer, and the adhesive Die bond dicing wherein the planar outer shape of the layer is larger than the planar outer shape of the semiconductor element mounting support member, and the distance between the end of the adhesive layer and the end of the support member is 1 mm or more and 12 mm or less Sheet.
- the first base has an elongated shape, and the adhesive layer, the pressure-sensitive adhesive layer, and the second base are formed on the upper surface of the elongated first base.
- a manufacturing method of a semiconductor device including a dividing step by an expand performed according to a stealth dicing method, wherein the dividing step is (I) a step of irradiating a semiconductor element mounting support member with a laser to form a modified portion; (Ii) a step of bonding the semiconductor element mounting support member and a die bond dicing sheet sequentially having a peelable first base material, an adhesive layer, a pressure-sensitive adhesive layer, and a second base material, The step of exposing the adhesive layer by peeling the first base material of the die bond dicing sheet, and subsequently bonding the adhesive layer and the semiconductor element mounting support member, (Iii) By expanding the second base material and the pressure-sensitive adhesive layer of the die bond dicing sheet, the semiconductor element mounting support member and the adhesive layer are simultaneously separated and separated into individual pieces.
- a process for obtaining a semiconductor element mounting support member wherein the die bond dicing sheet according to any one of (1) to (4) is used as the die bond dicing sheet.
- step (iii) is performed under an expanded condition in which the second base material and the pressure-sensitive adhesive layer are not divided.
- problems such as peeling and scattering of the adhesive layer from the pressure-sensitive adhesive layer during expansion and adhesion to the semiconductor chip can be improved.
- a first aspect of the present invention relates to a die bond dicing sheet that is used by being attached to a semiconductor element mounting support member that is divided by a dicing process.
- the semiconductor element mounting support member constitutes a substrate on which the semiconductor element is mounted, and means a member composed of a material that can be singulated at the time of manufacturing the semiconductor element.
- One embodiment includes a silicon semiconductor device substrate known as a semiconductor wafer, or a semiconductor device substrate made of other semiconductor materials.
- FIG. 5 is a view schematically showing an embodiment of the die bond dicing sheet of the present invention.
- the die bond dicing sheet of the present invention includes a peelable first substrate 10, an adhesive layer 12 provided on one side of the first substrate 10, and the adhesive layer. 12 has an adhesive layer 13 that covers the entire top surface of 12 and has a peripheral edge portion 13 a that does not overlap the adhesive layer 12, and a second substrate 14 provided on the upper surface of the adhesive layer 13.
- FIG. 6 is a view for explaining the structure of the die bond dicing sheet of the present invention. FIG. 6 shows a state where the first substrate 10 of the die-bonded dicing sheet of the present invention shown in FIG.
- the planar outer shape of the adhesive layer 12 is larger than the planar outer shape of the semiconductor element mounting support member 30, and the adhesive.
- a distance D between the end of the layer 12 and the end of the support member 30 is 1 mm or more and 12 mm or less.
- the distance D is preferably 12 mm or less, more preferably 10 mm or less, and even more preferably 8 mm or less, from the viewpoint of facilitating prevention of scattering of the adhesive layer during expansion.
- at least 1 mm is necessary as the distance D from the viewpoint of positional deviation in the bonding process between the semiconductor wafer and the sheet and the accuracy of the apparatus.
- the distance D is preferably 2 mm or more. More preferably, it is 3 mm or more.
- the distance D is preferably in the range of 1 to 12 mm, more preferably in the range of 2 to 10 mm. More preferably, it is in the range of 3 to 8 mm.
- the first base material has an elongated shape
- a plurality of laminated bodies including the second base material are arranged in an island shape and have a shape wound in a roll shape in the longitudinal direction with the upper surface of the first base material being inward.
- the die bond dicing sheet of this invention should just have the above-mentioned predetermined shape, and can be comprised using a well-known material in this technical field.
- a well-known protective film in the art can be used.
- plastic films include polyester films such as polyethylene terephthalate films, polytetrafluoroethylene films, polyethylene films, polypropylene films, polymethylpentene films, polyolefin films such as polyvinyl acetate films, polyvinyl chloride films, polyimide films, etc. Is mentioned.
- the first base material is intended to protect the sheet and is peeled off at the time of use. Therefore, the release surface of the base material is made of a silicone-type release agent, a fluorine-type release agent, and a long-chain alkyl acrylate-type release agent. It is preferable to treat in advance with a mold release agent. Further, the thickness of the first base material can be appropriately selected within a range that does not impair workability. Usually, the thickness is 1000 ⁇ m or less. In one embodiment, the thickness of the first substrate is preferably 1 to 100 ⁇ m, more preferably 2 to 20 ⁇ m. More preferably, it is 3 to 10 ⁇ m.
- the adhesive layer can be configured using various known adhesives used for bonding (bonding) semiconductor chips.
- the adhesive is preferably one that can fix the semiconductor wafer during dicing, functions as a die bond material after cutting the wafer, and can easily bond the semiconductor chip to the chip mounting substrate. From such a viewpoint, it is preferable to adjust the adhesive so that the peel strength before UV irradiation at the interface between the adhesive layer and the pressure-sensitive adhesive layer falls within an appropriate range.
- at least one selected from the group consisting of a thermosetting adhesive, a photocurable adhesive, a thermoplastic adhesive, and an oxygen-reactive adhesive can be used.
- the adhesive agent containing an epoxy resin, a phenol hardener, an acrylic resin, and an inorganic filler can be used.
- the ratio of each component is preferably a ratio of 10: 5: 5: 8 in order by weight.
- the adhesive layer can be formed by applying an adhesive on the first substrate according to a known method such as a coating method.
- the thickness of the adhesive layer is not particularly limited, but it is usually desirable to set it in the range of 1 to 200 ⁇ m. By making the thickness of the adhesive layer 1 ⁇ m or more, it becomes easy to ensure a sufficient die bond adhesive force. On the other hand, when the thickness exceeds 200 ⁇ m, there is no advantage in characteristics and it is uneconomical. From such a viewpoint, as one embodiment, the thickness is preferably 3 to 150 ⁇ m, more preferably 10 to 100 ⁇ m.
- an adhesive layer is not specifically limited, It can comprise using an adhesive well-known in this technical field.
- the pressure-sensitive adhesive can fix the semiconductor wafer and the second base material via the adhesive layer during dicing, but can be easily separated from the adhesive layer when picking up the semiconductor chip obtained after cutting the wafer.
- the adhesive comprises a compound having a diol group, an isocyanate compound, a urethane (meth) acrylate compound, a diamine compound, a urea methacrylate compound, and a high energy ray polymerizable copolymer having an ethylenically unsaturated group in the side chain. At least one selected from the group can be used.
- the pressure-sensitive adhesive is preferably composed of a component whose adhesiveness does not easily change depending on the storage environment such as temperature, humidity, storage period, and the presence or absence of oxygen, and more preferably the adhesive does not change depending on the storage environment.
- the pressure-sensitive adhesive may contain a component that is cured by high energy rays such as ultraviolet rays or radiation or heat.
- a component that is cured by high energy rays is preferable, and a component that is cured by ultraviolet rays is particularly preferable.
- the pressure-sensitive adhesive contains a component that is cured by high energy rays such as ultraviolet rays or radiation or heat, the pressure-sensitive adhesive force of the pressure-sensitive adhesive can be reduced by the curing treatment.
- the second substrate may be a well-known substrate used for dicing sheets in the art.
- the base material is not particularly limited, and various plastic films exemplified above as the first base material can be used.
- the base material may have a multilayer structure in which a plurality of films are laminated as a single layer structure. That is, in one embodiment, the substrate is a polyester film such as a polyethylene terephthalate film, a polytetrafluoroethylene film, a polyethylene film, a polypropylene film, a polymethylpentene film, a polyolefin film such as a polyvinyl acetate film, or polyvinyl chloride.
- the dicing sheet base material preferably exhibits excellent extensibility when expanded. From such a viewpoint, in one embodiment, it is preferable to use a polyolefin-based film.
- the thickness of the dicing sheet substrate is usually in the range of 10 to 500 ⁇ m, preferably 50 to 200 ⁇ m.
- the above-mentioned die bond dicing sheet can be manufactured by a method well known in the art.
- the die bond dicing sheet can be produced, for example, by sequentially forming an adhesive layer and a pressure-sensitive adhesive layer on the first or second substrate by a coating method.
- the adhesive layer formed on the first base material and the pressure-sensitive adhesive layer formed on the second base material can be manufactured by bonding them together.
- a 2nd aspect of this invention is related with the manufacturing method of the semiconductor device which uses the die-bonding dicing sheet of this invention.
- the manufacturing method includes a step of attaching the adhesive layer of the die bond dicing sheet to the back surface of the semiconductor wafer, a dividing step of simultaneously separating the semiconductor wafer and the adhesive layer of the die bond dicing sheet, and an individualization.
- a dividing method known in the art can be applied, but an expanding dividing method is preferable. In particular, it is preferable to apply an expanding method that is performed according to the stealth dicing method.
- a preferred embodiment of the present invention relates to a method for manufacturing a semiconductor device, including a dividing step by an expand performed according to a stealth dicing method, and using the die bond dicing sheet according to the first aspect of the present invention in the dividing step. According to such an embodiment, it is possible to suppress DAF scattering during expansion, so that a semiconductor chip can be obtained with a high yield, and the semiconductor chip pick-up operation can be performed well. This makes it possible to efficiently manufacture the semiconductor device.
- the dividing step includes (I) a step of irradiating a semiconductor element mounting support member with a laser to form a modified portion; (Ii) A step of bonding the semiconductor element mounting support member and a die bond dicing sheet sequentially having a peelable first base material, an adhesive layer, a pressure-sensitive adhesive layer, and a second base material, The step of exposing the adhesive layer by peeling the first substrate of the die bond dicing sheet, and subsequently bonding the adhesive layer and the semiconductor element mounting support member, (Iii) By expanding the second base material of the die bond dicing sheet, the semiconductor element mounting support member, the adhesive layer, and the pressure-sensitive adhesive layer are simultaneously separated and separated into individual pieces. It is preferable to have the process of obtaining an attached support member.
- the step (iii) is performed under a condition in which the second base material and the pressure-sensitive adhesive layer are not divided during the expansion.
- a dicing sheet has a dicing sheet base material and the adhesive layer provided on it.
- an external force is applied by an expand, and the dicing sheet (second base material and pressure-sensitive adhesive layer) is stretched.
- the dicing sheet has a larger stretching amount in that it is easy to simultaneously cut the semiconductor wafer and the adhesive layer. On the other hand, if the amount of stretching becomes too large, the dicing sheet itself tends to break.
- the temperature is ⁇ 15 ° C. to 0 ° C.
- the expansion speed is 10 mm / second
- the amount of expansion Is preferably carried out under the condition of 10 to 15 mm.
- the expansion can be performed using an expanding jig known in the art.
- the semiconductor device manufacturing method may include (iv) a step of irradiating active energy such as ultraviolet rays according to the characteristics of the pressure-sensitive adhesive layer, if necessary, in addition to the above-described dividing step.
- active energy such as ultraviolet rays
- the adhesive force between the said adhesive layer and the said adhesive layer can be reduced by hardening the said adhesive layer.
- One embodiment of the manufacturing method of the present invention includes another process for manufacturing a semiconductor device using the semiconductor chip obtained in the dividing process. Specifically, following the cutting step including (i) to (iv) above, (v) each semiconductor chip is peeled off and picked up from the adhesive layer with the adhesive layer attached, Placing a semiconductor chip with an agent layer on a support member such as a lead frame, heating and bonding, (vi) wire bonding, (vii) sealing the semiconductor chip using a sealing material By carrying out the above, a semiconductor device can be manufactured.
- Example 1 A semiconductor wafer having a thickness of 100 ⁇ m and a diameter of 300 mm was prepared. By irradiating the semiconductor wafer with a laser, a 10 mm ⁇ 10 mm lattice-shaped modified portion was formed. Further, a die bond dicing sheet having a diameter of 305 mm having an adhesive layer having a thickness of 60 ⁇ m, a pressure-sensitive adhesive layer having a thickness of 20 ⁇ m, and a second substrate having a thickness of 150 ⁇ m was prepared on a peelable first substrate. At this time, the peel strength before UV irradiation at the interface between the adhesive and the pressure-sensitive adhesive layer on the protective film was adjusted to be 1.3 N / 25 mm by the 90 ° peel test method.
- a PET film was used as the first substrate.
- the adhesive layer was formed using a thermosetting material in which an epoxy resin, a phenol curing agent, an acrylic resin, and an inorganic filler were mixed at a weight ratio of 10: 5: 5: 8.
- the pressure-sensitive adhesive layer was formed using an acrylic resin containing a UV reactive component.
- an ionomer resin film was used as the second substrate. The peel strength can be adjusted, for example, by changing the amount of UV-reactive component used.
- the first substrate of the die bond dicing sheet was peeled off to expose the adhesive layer.
- the adhesive layer surface of the die bond dicing sheet was attached to the wafer at 12 mm / second and 70 ° C.
- the wafer with the sheet was divided by expanding so as to push the dicing tape upward by 12 mm at a speed of 100 mm / second under the condition of ⁇ 15 ° C.
- Example 2 A die bond dicing sheet was produced in the same manner as in Example 1 except that the outer dimension of the adhesive layer in the die bond dicing sheet was changed to 312 mm in diameter. Next, using the obtained die bond dicing sheet, the wafer was divided in the same manner as in Example 1, and each evaluation was performed. The results are shown in Table 1.
- Example 3 A die bond dicing sheet was produced in the same manner as in Example 1 except that the outer dimension of the adhesive layer in the die bond dicing sheet was changed to 308 mm in diameter. Next, using the obtained die bond dicing sheet, the wafer was divided in the same manner as in Example 1, and each evaluation was performed. The results are shown in Table 1.
- Example 4 A die bond dicing sheet was produced in the same manner as in Example 1 except that the outer dimension of the adhesive layer in the die bond dicing sheet was changed to 303 mm in diameter. Next, using the obtained die bond dicing sheet, the wafer was divided in the same manner as in Example 1, and each evaluation was performed. The results are shown in Table 1.
- Example 1 A die bond dicing sheet was produced in the same manner as in Example 1 except that the outer dimension of the adhesive layer in the die bond dicing sheet was changed to a diameter of 320 mm. Next, using the obtained die bond dicing sheet, the wafer was divided in the same manner as in Example 1, and each evaluation was performed. The results are shown in Table 1.
- 10 1st peelable base material (peelable sheet, protective film) 12: Adhesive layer, 12b: Divided adhesive layer, 12c: Part of the adhesive layer that is not in contact with the semiconductor wafer, 12c ′: Adhesive layer that is scattered and attached 13: Adhesive layer, 13a: Perimeter Part 14: Second substrate (dicing sheet substrate) 20: Laser source 30: Support member (semiconductor wafer), 30a: Modified portion by laser, 30b: Semiconductor chip 40: Dicing ring 50: Expand cutting jig D: Adhesive layer end and adhesive layer end Interval
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Abstract
Description
(1)カッティングあるいはパンチングによって、ロール状(リール状)の接着フィルムから該接着フィルムの個片を切り出す。次いで、上記個片をリードフレームに貼り付ける。
(2)得られた接着フィルム付きリードフレームに、予めダイシング工程にて切断分離(ダイシング)した素子小片(半導体チップ)を載置する。次いで、これらを接合(ダイボンド)することによって、半導体チップ付きリードフレームを作製する。
(3)ワイヤボンド工程、及び封止工程などを実施する。
しかし、このような方法では、ロール状の接着フィルムから接着フィルムの個片を切り出し、更に、切り出した接着フィルムの個片をリードフレームへ接着させるための、専用の組立装置が必要となる。そのため、銀ペーストを使用する方法に比べて、製造コストが割高になる点で改善が望まれる。
(1)半導体ウェハの裏面に接着フィルムを貼り付け、更に接着フィルムの上にダイシングテープを貼り合わせる。
(2)ダイシング工程を実施し、接着フィルムが付いた状態で半導体ウェハを個片化する。
(3)得られた接着フィルム付き半導体チップの各個片をピックアップし、これをリードフレームに貼り付ける。
(4)その後、加熱によって接着フィルムを硬化させる工程、ワイヤボンド工程、及び封止工程などを実施する。
このような方法では、接着フィルムと半導体ウェハとを一緒に個片化し、接着フィルム付き半導体チップを作製するため、独立して接着フィルムを個片化する装置が不要となる。そのため、従来の銀ペーストを用いた場合に使用される組立装置をそのまま使用できるか、又は組立装置に熱盤を付加するなど、上記装置を一部改良するだけで良く、製造コストを比較的安く抑えることができる。しかし、この方法は、ダイシング工程までに、接着フィルムの貼付と、それに続くダイシングテープの貼付との2回の貼付工程が必要である。
(1)通常の半導体ウェハ30にレーザーを照射し、ウェハ内部に改質部30aを形成する(図2(a))。
(2)ダイボンドダイシングシートの剥離性シート10を剥離して、接着剤層12を露出させる(図2(b))。
(3)接着剤層12の上記露出面に、改質部30aを有するウェハ30及びダイシング用リング40を貼り合わせる(図2(c))。
(4)エキスパンド治具50を用いて、基材14及び粘着剤層13(ダイシングテープ)を延伸することにより、ウェハをエキスパンド分断してチップに個片化する(図2(d))。
(1)ダイボンドダイシングシートの剥離性シート10を剥離して、接着剤層12及び粘着剤層13の一部を露出させる(図3(a))。なお、上記粘着剤層13の露出部は、帯状円環形状を有し、ダイシング用リングの載置領域となる。
(2)次に、上記粘着剤層13の露出部の上にダイシング用リング40を載置し、リング内側の所定の位置(接着剤層12の上)に、先にレーザーによって改質部30aを形成した半導体ウェハ30を載置する(図3(b)及び(c))。
(3)次に、エキスパンド治具50を用いて、基材14及び粘着剤層13(ダイシングテープ)を延伸することによって、半導体ウェハ30と接着剤層12とを同時に分断し、接着剤層付き半導体チップ(12b及び30b)を作製する(図3(d))。
(4)上記接着剤層付き半導体チップを粘着剤層13の表面からピックアップし、リードフレーム上に載置し、加熱及び接合(ダイボンド)する。引き続きワイヤボンド処理を行い、封止材を用いて半導体チップを封止する(不図示)。
(i)半導体素子搭載用支持部材にレーザーを照射し、改質部を形成する工程、
(ii)上記半導体素子搭載用支持部材と、剥離性の第1の基材、接着剤層、粘着剤層及び第2の基材を順次有するダイボンドダイシングシートとを貼り合せる工程であって、上記ダイボンドダイシングシートの上記第1の基材を剥離することによって上記接着層を露出させ、引き続き、上記接着剤層と上記半導体素子搭載用支持部材とを貼り合せる工程、次いで、
(iii)上記ダイボンドダイシングシートの上記第2の基材及び上記粘着剤層をエキスパンドすることによって、上記半導体素子搭載用支持部材と上記接着剤層とを同時に分断し、個片化した接着剤層付の上記半導体素子搭載用支持部材を得る工程
を有し、上記ダイボンドダイシングシートとして、上記(1)~(4)のいずれか1つに記載のダイボンドダイシングシートを使用する、製造方法。
(ダイボンドダイシングシート)
本発明の第1の態様は、ダイシング工程によって分断される半導体素子搭載用支持部材に貼り付けて使用する、ダイボンドダイシングシートに関する。ここで、上記半導体素子搭載用支持部材とは、半導体素子を搭載する基板を構成するものであり、半導体素子の製造時に個片化され得る材料から構成される部材を意味する。一実施形態として、半導体ウェハとして知られるシリコン製半導体素子用基板、又は他の半導体材料から構成される半導体素子用基板が挙げられる。
図6は、本発明のダイボンドダイシングシートの構造を説明するための図である。図6は、図5に示した本発明のダイボンドダイシングシートの上記第1の基材10を剥離した後に、半導体素子搭載用支持部材(半導体ウェハ)に貼り付けた状態を示している。図6(b)に具体的に示すように、本発明のダイボンドダイシングシートにおいて、上記接着剤層12の平面外形は、上記半導体素子搭載用支持部材30の平面外形よりも大きく、かつ上記接着剤層12の端部と、上記支持部材30の端部との間隔Dが、1mm以上、12mm以下であることを特徴とする。
(第1の基材)
剥離性の第1の基材は、当技術分野で保護フィルムとして周知のものを使用することができる。例えば、一実施形態において、プラスチックフィルムを使用することが好ましい。プラスチックフィルムの具体例として、ポリエチレンテレフタレートフィルム等のポリエステル系フィルム、ポリテトラフルオロエチレンフィルム、ポリエチレンフィルム、ポリプロピレンフィルム、ポリメチルペンテンフィルム、ポリビニルアセテートフィルム等のポリオレフィン系フィルム、ポリ塩化ビニルフィルム、ポリイミドフィルムなどが挙げられる。別の実施形態として、紙、不織布、金属箔などを使用することもできる。上記第1の基材は、シートの保護を目的とするものであり、使用時に剥離されるため、基材の剥離面を、シリコーン系剥離剤、フッ素系剥離剤、長鎖アルキルアクリレート系剥離剤などの離型剤で予め処理しておくことが好ましい。また、第1の基材の厚みは、作業性を損なわない範囲で適宜選択することができる。通常は、1000μm以下の厚みである。一実施形態として、第1の基材の厚みは、好ましくは1~100μm、より好ましくは2~20μmである。さらに好ましくは3~10μmである。
接着剤層は、半導体チップの接着(接合)に使用される公知の種々の接着剤を用いて構成することができる。接着剤は、ダイシング時に半導体ウェハを固定することができ、ウェハ切断後はダイボンド材として機能し、半導体チップをチップ搭載用基板に容易に接合できるものが好ましい。このような観点から、接着剤層と粘着剤層との界面における、UV照射前の剥離強度が、適切な範囲となるように、接着剤を調整することが好ましい。例えば、熱硬化性接着剤、光硬化性接着剤、熱可塑性接着剤、及び酸素反応性接着剤からなる群から選択される少なくとも1種を使用することができる。特に限定するものではないが、エポキシ樹脂、フェノール硬化剤、アクリル樹脂、及び無機フィラーを含む接着剤を使用することができる。上記接着剤の一実施形態において、各成分の割合は、重量比で、順に、10:5:5:8の割合であることが好ましい。
粘着剤層は、特に限定されるものではなく、当技術分野で公知の粘着剤を用いて構成することができる。粘着剤は、ダイシング時には接着剤層を介して半導体ウェハと第2の基材とを固定することができるが、ウェハ切断後に得られる半導体チップのピックアップ時には接着剤層との剥離が容易となるように、その構成成分を適切に調整することが好ましい。例えば、粘着剤として、ジオール基を有する化合物、イソシアネート化合物、ウレタン(メタ)アクリレート化合物、ジアミン化合物、尿素メタクリレート化合物、及び側鎖にエチレン性不飽和基を有する高エネルギー線重合性共重合体からなる群から選択される少なくとも1種を使用することができる。粘着剤は、温度や湿度、保管期間、酸素の有無などの保管環境によって、粘着性が変化し難い成分から構成されることが好ましく、保管環境によって粘着性が変化しないものがより好ましい。
第2の基材は、当技術分野でダイシングシートに用いられる周知の基材であってよい。上記基材としては、特に限定されるものではなく、先に第1の基材として例示した各種プラスチックフィルムを使用することができる。上記基材は、単層構造として、複数のフィルムを積層した多層構造としてもよい。すなわち、一実施形態において、上記基材は、ポリエチレンテレフタレートフィルム等のポリエステル系フィルム、ポリテトラフルオロエチレンフィルム、ポリエチレンフィルム、ポリプロピレンフィルム、ポリメチルペンテンフィルム、ポリビニルアセテートフィルム等のポリオレフィン系フィルム、ポリ塩化ビニルフィルム、及びポリイミドフィルムからなる群から選択される少なくとも1種を使用して構成することが好ましい。ダイシングシート基材は、エキスパンド時に優れた伸張性を示すことが好ましい。このような観点から、一実施形態では、ポリオレフィン系フィルムを使用することが好ましい。なお、ダイシングシート基材の厚みは、通常10~500μm、好ましくは50~200μmの範囲である。
本発明の好ましい一実施形態は、ステルスダイシング法に従って実施されるエキスパンドによる分断工程を含み、上記分断工程において本発明の第1の態様であるダイボンドダイシングシートを使用する、半導体装置の製造方法に関する。このような実施形態によれば、エキスパンド時のDAF飛散を抑制することが可能となるため、歩留まりよく半導体チップを得ることができ、半導体チップのピックアップ作業を良好に実施することもできる。このことにより、半導体装置の製造を効率よく実施することが可能となる。
(i)半導体素子搭載用支持部材にレーザーを照射し、改質部を形成する工程、
(ii)上記半導体素子搭載用支持部材と、剥離性の第1の基材、接着剤層、粘着剤層及び第2の基材を順次有するダイボンドダイシングシートとを貼り合せる工程であって、上記ダイボンドダイシングシートの上記第1の基材を剥離することによって上記接着層を露出させ、引き続き、上記接着層と上記半導体素子搭載用支持部材とを貼り合せる工程、次いで、
(iii)上記ダイボンドダイシングシートの上記第2の基材をエキスパンドすることによって、上記半導体素子搭載用支持部材と上記接着剤層及び上記粘着剤層とを同時に分断し、個片化した接着剤層付の支持部材を得る工程、を有することが好ましい。
厚み100μmで、直径300mmの半導体ウェハを準備した。上記半導体ウェハにレーザーを照射することによって、10mm×10mmの格子状の改質部を形成した。また、剥離性の第1の基材上に、厚み60μmの接着剤層、厚み20μmの粘着剤層、及び厚み150μmの第2の基材を有する、直径305mmのダイボンドダイシングシートを準備した。この時、接着剤と、保護フィルム上の粘着剤層との界面における、UV照射前の剥離強度が、90°ピール試験方法にて1.3N/25mmになるように、調整した。
より具体的には、上記第1の基材として、PETフィルムを使用した。上記接着剤層は、エポキシ樹脂と、フェノール硬化剤と、アクリル樹脂と、無機フィラーとを重量比で10:5:5:8の割合で混合した熱硬化性材料を使用して形成した。上記粘着材層は、UV反応性成分を含むアクリル樹脂を使用して形成した。上記第2の基材として、アイオノマー樹脂製のフィルムを使用した。上記剥離強度は、例えば、UV反応性成分の使用量を変更することによって調整することができる。
(評価基準)
A:接着剤層が粘着剤層から剥がれていない。また、接着剤層がウェハ上面に載っていない。
B:接着剤層の一部が粘着剤層から剥がれている。しかし、剥がれた接着剤層はウェハ上面にまで達していない。
C:接着剤層が粘着剤層から剥がれている。また、剥がれた接着剤層がウェハ上面にまで達している(飛散及び付着している)。
ダイボンドダイシングシートにおける接着剤層の外寸を直径312mmに変更したことを除き、全て実施例1と同様にして、ダイボンドダイシングシートを作製した。次いで、得られたダイボンドダイシングシートを用い、実施例1と同様にして、ウェハの分断を行い、各評価を行なった。結果を表1に示す。
(実施例3)
ダイボンドダイシングシートにおける接着剤層の外寸を直径308mmに変更したことを除き、全て実施例1と同様にして、ダイボンドダイシングシートを作製した。次いで、得られたダイボンドダイシングシートを用い、実施例1と同様にして、ウェハの分断を行い、各評価を行なった。結果を表1に示す。
(実施例4)
ダイボンドダイシングシートにおける接着剤層の外寸を直径303mmに変更したことを除き、全て実施例1と同様にして、ダイボンドダイシングシートを作製した。次いで、得られたダイボンドダイシングシートを用い、実施例1と同様にして、ウェハの分断を行い、各評価を行なった。結果を表1に示す。
ダイボンドダイシングシートにおける接着剤層の外寸を直径320mmに変更したことを除き、全て実施例1と同様にして、ダイボンドダイシングシートを作製した。次いで、得られたダイボンドダイシングシートを用い、実施例1と同様にして、ウェハの分断を行い、各評価を行なった。結果を表1に示す。
12:接着剤層、12b:分断された接着剤層、12c:半導体ウェハと非接触となる接着剤層の部分、 12c’:飛散して付着した接着剤層
13:粘着剤層、13a:周縁部
14:第2の基材(ダイシングシート基材)
20:レーザー源
30:支持部材(半導体ウェハ)、30a:レーザーによる改質部、30b:半導体チップ
40:ダイシング用リング
50:エキスパンド分断用冶具
D:接着剤層端部と粘着剤層端部との間隔
Claims (6)
- 半導体素子搭載用支持部材に貼り付けて使用するダイボンドダイシングシートであって、
剥離性の第1の基材と、
前記第1の基材の片面上に設けられた接着剤層と、
前記接着剤層の上面全体を覆い、かつ前記接着剤層と重ならない周縁部を有する粘着剤層と、
前記粘着剤層の上面に設けられた第2の基材とを有し、
前記接着剤層の平面外形が、半導体素子搭載用支持部材の平面外形よりも大きく、かつ前記接着剤層の端部と、前記支持部材の端部との間隔が、1mm以上、12mm以下である、ダイボンドダイシングシート。 - 前記半導体素子搭載用支持部材が、半導体ウェハである、請求項1に記載のダイボンドダイシングシート。
- 前記第1の基材が長尺形状を有し、前記長尺形状の第1の基材の上面に、前記接着剤層と、前記粘着剤層と、前記第2の基材とを含む積層体が島状に複数配置され、かつ前記第1の基材の上面を内側にして長手方向にロール状に巻き取られた、請求項1又は2に記載のダイボンドダイシングシート。
- 前記第2の基材が、ステルスダイシング法に従って実施されるエキスパンドによる分断時に破断しないダイシングシート基材である、請求項1~3のいずれか1項に記載のダイボンドダイシングシート。
- ステルスダイシング法に従って実施されるエキスパンドによる分断工程を含む半導体装置の製造方法であって、前記分断工程が、
(i)半導体素子搭載用支持部材にレーザーを照射し、改質部を形成する工程、
(ii)前記半導体素子搭載用支持部材と、剥離性の第1の基材、接着剤層、粘着剤層及び第2の基材を順次有するダイボンドダイシングシートとを貼り合せる工程であって、前記ダイボンドダイシングシートの前記第1の基材を剥離することによって前記接着剤層を露出させ、引き続き、前記接着剤層と前記半導体素子搭載用支持部材とを貼り合せる工程、次いで、
(iii)前記ダイボンドダイシングシートの前記第2の基材及び前記粘着剤層をエキスパンドすることによって、前記半導体素子搭載用支持部材と前記接着剤層とを同時に分断し、個片化した接着剤層付の半導体素子搭載用支持部材を得る工程
を有し、前記ダイボンドダイシングシートとして、請求項1~4のいずれか1項に記載のダイボンドダイシングシートを使用する、製造方法。 - 前記工程(iii)が、前記第2の基材及び前記粘着剤層が分断されないエキスパンドの条件下で実施される、請求項5に記載の製造方法。
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JP6723644B2 (ja) * | 2016-05-16 | 2020-07-15 | 株式会社ディスコ | エキスパンドシート |
JP7042271B2 (ja) * | 2017-07-03 | 2022-03-25 | リンテック株式会社 | ステルスダイシング用粘着シートおよび半導体装置の製造方法 |
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