WO2015174127A1 - Dispositif électroluminescent et procédé de fabrication associé - Google Patents

Dispositif électroluminescent et procédé de fabrication associé Download PDF

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Publication number
WO2015174127A1
WO2015174127A1 PCT/JP2015/056885 JP2015056885W WO2015174127A1 WO 2015174127 A1 WO2015174127 A1 WO 2015174127A1 JP 2015056885 W JP2015056885 W JP 2015056885W WO 2015174127 A1 WO2015174127 A1 WO 2015174127A1
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WO
WIPO (PCT)
Prior art keywords
light emitting
light
emitting device
cover member
light source
Prior art date
Application number
PCT/JP2015/056885
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English (en)
Japanese (ja)
Inventor
角見　昌昭
浅野　秀樹
隆史 西宮
Original Assignee
日本電気硝子株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電気硝子株式会社 filed Critical 日本電気硝子株式会社
Priority to CN201580013008.4A priority Critical patent/CN106068568A/zh
Priority to KR1020167025414A priority patent/KR20170007239A/ko
Publication of WO2015174127A1 publication Critical patent/WO2015174127A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations

Definitions

  • the present invention relates to a light emitting device and a manufacturing method thereof.
  • Patent Document 1 discloses a light-emitting device that includes a blue LED and a sealing portion that seals the blue LED, and the sealing portion is made of a resin composition containing quantum dots.
  • the main object of the present invention is to provide a light emitting device in which the quantum dots in the sealed portion are hardly deteriorated by gas, moisture, etc., and the lifetime of the device can be extended.
  • the light emitting device includes a device body, a light source, a light emitting unit, and a cover member.
  • the device body has a recess.
  • the light source is disposed on the bottom wall of the recess.
  • the light emitting part is arranged in the recess so that light from the light source is incident.
  • the light emitting unit includes quantum dots.
  • the cover member closes the recess. The cover member seals the light source and the light emitting unit together with the device body.
  • the light emitting section may include a resin in which quantum dots are dispersed.
  • the light emitting unit may be provided directly on the light source so as to cover the light source.
  • the surface of the light emitting portion may be concave.
  • the light emitting part may be filled in a sealed space defined by the device main body and the cover member.
  • the light emitting portion may be provided on the surface of the cover member on the concave portion side.
  • the light emitting unit may be supported by the light source.
  • the light emitting device is preferably provided with a diffusing member that is disposed between the light emitting portion and the light source and diffuses light from the light source.
  • the cover member and the device main body may be welded.
  • the cover member and the device body may be anodically bonded.
  • the cover member and the device main body may be bonded by an inorganic bonding material.
  • a part of the device body may be made of metal.
  • the portion of the device body made of metal and the light emitting portion are in contact with each other.
  • the cover member preferably has a thickness of 1.0 mm or less.
  • the cover member preferably has a refractive index of 1.70 or less.
  • the cover member may have a grain boundary.
  • the cover member may include a light scattering agent.
  • the cover member may be made of ceramics.
  • the sealed space defined by the device body and the cover member may be decompressed.
  • the sealed space defined by the device body and the cover member may be an inert gas atmosphere.
  • a light source is disposed on the bottom wall of the recess of the device body having the recess.
  • the light emitting part is formed by arranging the resin in which the quantum dots are dispersed in the recess.
  • a cover member is disposed so as to close the recess, and the light source and the light emitting unit are sealed. Prior to the sealing step, the resin is heated to 100 ° C. or higher.
  • the lifetime of a light emitting device using quantum dots can be extended.
  • FIG. 1 is a schematic cross-sectional view of the light emitting device according to the first embodiment.
  • FIG. 2 is a schematic cross-sectional view of the light emitting device according to the second embodiment.
  • FIG. 3 is a schematic cross-sectional view of a light emitting device according to a third embodiment.
  • FIG. 4 is a schematic cross-sectional view of a light emitting device according to a fourth embodiment.
  • FIG. 5 is a schematic cross-sectional view of a light emitting device according to a fifth embodiment.
  • FIG. 6 is a schematic cross-sectional view of a light emitting device according to a sixth embodiment.
  • FIG. 7 is a schematic cross-sectional view of a light emitting device according to a seventh embodiment.
  • FIG. 8 is a schematic cross-sectional view of a light emitting device according to an eighth embodiment.
  • FIG. 1 is a schematic cross-sectional view of a light emitting device 1 according to the first embodiment.
  • the light emitting device 1 is a device that emits light having a wavelength different from that of the excitation light when the excitation light is incident.
  • the light emitting device 1 may emit mixed light of excitation light and light generated by irradiation of excitation light.
  • the light emitting device 1 has a device body 10.
  • the device main body 10 includes a first member 11 and a second member 12.
  • the second member 12 is provided on the first member 11.
  • the second member 12 is provided with a through hole 12 a that opens to the first member 11.
  • a recess 13 is formed by the through hole 12a.
  • the through hole 12a tapers toward the first member 11 side. For this reason, the side wall 13 a of the recess 13 is inclined with respect to the main surface of the first member 11.
  • the device body 10 may be made of any material.
  • the device body 10 may be made of, for example, ceramics such as low-temperature co-fired ceramics, metal, resin, glass, or the like.
  • the material constituting the first member 11 and the material constituting the second member 12 may be the same or different.
  • an example in which a part of the device body 10 is made of metal will be described. Specifically, the example in which the 2nd member 12 which comprises the side wall 13a among the device main bodies 10 is comprised with the metal is demonstrated.
  • the metal which comprises the device main body 10 aluminum, copper, iron, the alloy which consists of these components, etc. are mentioned, for example.
  • the light source 20 is disposed on the bottom wall 13b of the recess 13 of the device body 10.
  • the light source 20 can be composed of, for example, an LED (Light Emitting Diode) element, an LD (Laser Diode) element, or the like. In the present embodiment, an example in which the light source 20 is configured by LEDs will be described.
  • a light emitting unit 30 is arranged in the recess 13.
  • the light emitting unit 30 is arranged so that light from the light source 20 enters.
  • the light emitting unit 30 is disposed on the light source 20 so as to block the light source 20.
  • the light emitting unit 30 includes quantum dots.
  • the light emitting unit 30 may include one type of quantum dot or may include a plurality of types of quantum dots.
  • the quantum dot emits light having a wavelength different from that of the excitation light when the quantum dot excitation light is incident.
  • the wavelength of the light emitted from the quantum dot depends on the particle diameter of the quantum dot. That is, the wavelength of the light obtained by changing the particle diameter of the quantum dots can be adjusted. For this reason, the particle diameter of a quantum dot is made into the particle diameter according to the wavelength of the light to obtain.
  • the particle size of the quantum dots is usually about 2 nm to 10 nm.
  • quantum dots that emits blue visible light (fluorescence with a wavelength of 440 nm to 480 nm) when irradiated with excitation light of ultraviolet to near ultraviolet with a wavelength of 300 nm to 440 nm
  • the particle diameter is about 2.0 nm to 3.0 nm.
  • quantum dots that emit green visible light (fluorescence having a wavelength of 500 nm to 540 nm) when irradiated with ultraviolet to near ultraviolet excitation light having a wavelength of 300 nm to 440 nm or blue excitation light having a wavelength of 440 nm to 480 nm include particle diameters.
  • CdSe / ZnS microcrystals having a thickness of about 3.0 nm to 3.3 nm.
  • Specific examples of quantum dots that emit yellow visible light (fluorescence having a wavelength of 540 nm to 595 nm) when irradiated with ultraviolet to near ultraviolet excitation light having a wavelength of 300 nm to 440 nm or blue excitation light having a wavelength of 440 nm to 480 nm include particle diameters.
  • CdSe / ZnS microcrystals having a thickness of about 3.3 nm to 4.5 nm.
  • quantum dots that emit red visible light (fluorescence with a wavelength of 600 nm to 700 nm) when irradiated with ultraviolet to near ultraviolet excitation light with a wavelength of 300 nm to 440 nm or blue excitation light with a wavelength of 440 nm to 480 nm include particle diameters.
  • CdSe / ZnS microcrystals having a thickness of about 4.5 nm to 10 nm.
  • the light emitting unit 30 is solid.
  • the light emitting unit 30 includes a resin in which quantum dots are dispersed.
  • the resin preferably used include a silicone resin, an epoxy resin, and an acrylic resin.
  • the light emitting unit 30 may further include, for example, a light dispersing agent or the like in addition to the resin and the quantum dots.
  • the light emitting unit 30 is provided immediately above the light source 20 so as to cover the light source 20.
  • the light emitting unit 30 is provided across the bottom wall 13b and the side wall 13a including the portion where the light source 20 is provided. For this reason, the 2nd member 12 and the light emission part 30 which were comprised with the metal are contacting.
  • the surface 30a of the light emitting unit 30 is a concave surface.
  • the light emission part 30 may be comprised by the laminated body of the multiple layers of light emitting layer.
  • the plurality of light emitting layers may include a plurality of light emitting layers including quantum dots that emit light having different wavelengths.
  • a stacked body of a plurality of light-emitting layers including a first light-emitting layer including quantum dots that emit light having a first wavelength and a second light-emitting layer including quantum dots that emit light having a second wavelength You may comprise the light emission part 30 by.
  • the recess 13 is closed by the cover member 40.
  • the cover member 40 and the device body 10 are joined.
  • a sealing space 50 is defined by the cover member 40 and the device body 10.
  • the light source 20 and the light emitting unit 30 are sealed in the sealed space 50.
  • the light source 20 and the light emitting unit 30 are sealed in the sealed space 50. For this reason, it is suppressed that the quantum dot contained in the light emission part 30 contacts a water
  • the device body 10 and the cover member 40 are made of a material that hardly transmits moisture and oxygen. . It is preferable that the device main body 10 and the cover member 40 are each made of an inorganic material. Specifically, the device body 10 is preferably made of metal, ceramics, glass, or the like. Since the cover member 40 needs to have translucency, the cover member 40 is preferably made of glass, ceramics, or the like, for example.
  • the light emitting device 1 is configured so that moisture and oxygen do not easily enter from the gap between the device body 10 and the cover member 40.
  • the device body 10 and the cover member 40 are preferably welded.
  • the device body 10 and the cover member 40 are preferably welded using a laser or the like.
  • the cover member 40 and the device body 10 are anodically bonded.
  • the cover member 40 and the device main body 10 are bonded by an inorganic bonding material.
  • the deterioration of the light emitting device 1 using the quantum dots tends to progress as the quantum dots become higher in temperature.
  • the device body 10 is made of a metal having high thermal conductivity. For this reason, the heat of the light source 20 is easily radiated via the device body 10.
  • the second member 12 made of metal and the light emitting unit 30 are in contact with each other. For this reason, the heat of the light emitting unit 30 is easily radiated through the second member 12.
  • the contact area between the light emitting unit 30 and the second member 12 can be increased even if the filling amount of the light emitting unit 30 is small. Can be bigger. Therefore, the heat of the light emitting unit 30 is easily radiated more efficiently via the second member 12. Accordingly, the light emitting device 1 has a longer life.
  • the cover member 40 is made of ceramics having high thermal conductivity.
  • the sealed space 50 is preferably decompressed.
  • the sealed space 50 is preferably an inert gas atmosphere such as a nitrogen atmosphere or an argon atmosphere.
  • the sealed space 50 is preferably pressurized.
  • the thickness of the cover member 40 is preferably 1.0 mm or less, and more preferably 0.5 mm or less. However, if the thickness of the cover member 40 is too small, the mechanical strength of the cover member 40 may be too low. Therefore, the thickness of the cover member 40 is preferably 0.005 mm or more.
  • the refractive index of the cover member 40 is preferably 1.70 or less, and more preferably 1.60 or less. The refractive index of the cover member 40 is usually 1.46 or more.
  • the cover member 40 has light scattering ability. Specifically, it is preferable that the cover member 40 has a grain boundary. Or it is preferable that the cover member 40 contains the light-scattering agent.
  • the light scattering agent preferably used include highly reflective inorganic compounds such as alumina, titania, and silica, and highly reflective white resins.
  • the manufacturing method of the light emitting device 1 is not particularly limited.
  • the light emitting device 1 can be manufactured, for example, in the following manner.
  • the device body 10 having the recess 13 is prepared.
  • the light source 20 is disposed on the device body 10.
  • the resin composition containing quantum dots is supplied into the recess 13 and cured to form the light emitting unit 30.
  • the cover member 40 can be attached to the device body 10 by, for example, laser welding, anodic bonding, bonding using an inorganic bonding material such as solder, or the like.
  • the step of supplying and curing the resin composition containing quantum dots and the step of attaching the cover member 40 may be performed, for example, under a reduced pressure atmosphere or an inert gas atmosphere.
  • the resin contained in the light emitting unit 30 Before performing the sealing step, it is preferable to heat the resin contained in the light emitting unit 30 to reduce the moisture concentration of the resin.
  • the resin contained in the light emitting unit 30 is preferably heated to 100 ° C. or higher, more preferably 150 ° C. or higher.
  • the resin may be heated after curing or before curing, for example, before coating.
  • members having substantially the same functions as those of the first embodiment are referred to by the same reference numerals, and description thereof is omitted.
  • FIG. 2 is a schematic cross-sectional view of a light emitting device 1a according to the second embodiment.
  • Embodiment demonstrated the example in which the light emission part 30 was distribute
  • the light emitting unit 30 is filled in the sealed space 50.
  • the light emitting unit 30 does not have a surface separated from the cover member 40.
  • the light emitting unit 30 is in close contact with the surface of the cover member 40 on the recess 13 side. In this case, the interface located on the light emitting side of the light emitting unit 30 is reduced. Therefore, the light extraction efficiency from the light emitting unit 30 is improved.
  • manufacturing variations in the thickness of the light emitting unit 30 can be suppressed. For this reason, the dispersion
  • FIG. 3 is a schematic cross-sectional view of a light emitting device 1b according to the third embodiment.
  • the present invention demonstrated the example in which the light emission part 30 was distribute
  • the present invention is not limited to this configuration.
  • the light emitting unit 30 is provided on the surface of the cover member 40 on the concave portion 13 side.
  • the light emitting unit 30 is provided on substantially the entire portion of the surface of the cover member 40 on the concave portion 13 side exposed to the concave portion 13.
  • Such a light emitting unit 30 can be formed, for example, by applying a paste containing quantum dots and resin on the cover member 40 and drying the paste. In this case, the thickness unevenness of the light emitting unit 30 can be reduced. Accordingly, variations in the light emission intensity and light emission chromaticity of the light emitting device 1 can be suppressed.
  • FIG. 4 is a schematic cross-sectional view of a light emitting device 1c according to the fourth embodiment.
  • the light emitting unit 30 is supported by the light source 20.
  • the light emitting unit 30 is provided immediately above the upper surface of the light source 20.
  • the light emitting unit 30 and the light source 20 are in direct contact. For this reason, the number of interfaces between the light emitting unit 30 and the light source 20 is small. Therefore, the incident efficiency of the light from the light source 20 to the light emitting unit 30 can be increased.
  • FIG. 5 is a schematic cross-sectional view of a light emitting device 1d according to the fifth embodiment.
  • FIG. 6 is a schematic cross-sectional view of a light emitting device according to a sixth embodiment.
  • a diffusing member 60 that diffuses light from the light source 20 is provided between the light emitting unit 30 and the light source 20. .
  • the diffusing member 60 it is possible to reduce the variation in the incident intensity of the light from the light source 20 to the light emitting unit 30. Therefore, the in-plane variation of the light emission intensity and the light emission chromaticity can be reduced.
  • the light emitting unit 30 is provided immediately above the diffusion member 60.
  • the light emitting unit 30 and the diffusing member 60 are in contact with each other. Therefore, it is possible to increase the incident efficiency of light to the light emitting unit 30.
  • the light emitting unit 30 and the light source 20 are isolated. A space is provided between the light emitting unit 30 and the light source 20. For this reason, the heat from the light source 20 is not easily transmitted to the light emitting unit 30. Therefore, thermal degradation of the light emitting unit 30 can be suppressed.
  • the diffusion member 60 may be brought into contact with the device body 10. By doing so, the heat of the light source 20 is easily radiated through the diffusion member 60 and the device body 10.
  • FIG. 7 is a schematic cross-sectional view of a light emitting device 1f according to the seventh embodiment.
  • the cover member 40 and the device main body 10 are bonded by an inorganic bonding material 70 such as solder or a low melting point frit.
  • an inorganic bonding material 70 such as solder or a low melting point frit.
  • FIG. 8 is a schematic cross-sectional view of a light emitting device 1g according to the eighth embodiment.
  • the present invention is not limited to this configuration.
  • the shape of the through hole 12az provided in the second member 12z is formed so as to taper from the middle in the height direction toward the first member 11 side.
  • the recess 13z may be configured, and the cover member 40 may be fitted into the recess 13z to close the recess 13z.
  • the light emitting unit 30 is provided on the entire surface of the cover member 40 on the concave portion 13z side.
  • the present invention is not limited to this configuration.
  • the light emitting unit may be disposed on the bottom wall of the recess.
  • Light-emitting device 10 Device body 11 First member 12, 12z Second member 12a, 12az Through hole 13, 13z Recess 13a Side wall 13b Bottom wall 20
  • Light source 30 Light emission Part 40 cover member 50 sealing space 60 diffusion member 70 inorganic bonding material

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  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un dispositif électroluminescent qui n'est pas prédisposé à la détérioration de boîtes quantiques dans une partie scellée, ladite détérioration étant provoquée par du gaz, de l'humidité ou par d'autres éléments semblables, et capable d'avoir une durée de vie plus grande. Ce dispositif électroluminescent (1) comprend un corps principal de dispositif (10), une source lumineuse (20), une partie émission de lumière (30), et un élément de couverture (40). Le corps principal de dispositif (10) comporte une partie en creux (13). La source lumineuse (20) est disposée sur une paroi inférieure (13b) de la partie en creux (13). La partie émission de lumière (30) est agencée dans la partie en creux (13) de façon à ce que la lumière provenant de la source lumineuse (20) soit incidente sur cette dernière. La partie émission de lumière (30) contient des boîtes quantiques. L'élément de couverture (40) recouvre la partie en creux (13). L'élément de couverture (40) scelle ensemble la source lumineuse (20) et la partie émission de lumière (30) avec le corps principal de dispositif (10).
PCT/JP2015/056885 2014-05-16 2015-03-09 Dispositif électroluminescent et procédé de fabrication associé WO2015174127A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201580013008.4A CN106068568A (zh) 2014-05-16 2015-03-09 发光器件及其制造方法
KR1020167025414A KR20170007239A (ko) 2014-05-16 2015-03-09 발광 디바이스 및 그 제조 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014102612A JP2015220330A (ja) 2014-05-16 2014-05-16 発光デバイス及びその製造方法
JP2014-102612 2014-05-16

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WO2015174127A1 true WO2015174127A1 (fr) 2015-11-19

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JP (1) JP2015220330A (fr)
KR (1) KR20170007239A (fr)
CN (1) CN106068568A (fr)
TW (1) TW201545382A (fr)
WO (1) WO2015174127A1 (fr)

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US11539182B2 (en) 2019-09-20 2022-12-27 Nichia Corporation Light source device and method of manufacturing the same

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JP2018125477A (ja) * 2017-02-03 2018-08-09 日本電気硝子株式会社 パッケージ及び波長変換部材の製造方法、パッケージ、波長変換部材、発光デバイス、パッケージの母材、並びに容器の母材
JP2020047852A (ja) * 2018-09-20 2020-03-26 豊田合成株式会社 発光装置
JP7319517B2 (ja) * 2019-02-06 2023-08-02 日亜化学工業株式会社 発光装置、パッケージ、及び、基部
JP2021012961A (ja) * 2019-07-08 2021-02-04 スタンレー電気株式会社 発光装置、および、その製造方法
JP7499019B2 (ja) * 2019-12-09 2024-06-13 スタンレー電気株式会社 発光装置及びその製造方法

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