WO2015122448A1 - 化合物系薄膜太陽電池 - Google Patents
化合物系薄膜太陽電池 Download PDFInfo
- Publication number
- WO2015122448A1 WO2015122448A1 PCT/JP2015/053799 JP2015053799W WO2015122448A1 WO 2015122448 A1 WO2015122448 A1 WO 2015122448A1 JP 2015053799 W JP2015053799 W JP 2015053799W WO 2015122448 A1 WO2015122448 A1 WO 2015122448A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- buffer layer
- layer
- zno
- compound
- solar cell
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 37
- 150000001875 compounds Chemical class 0.000 title claims abstract description 31
- 239000010408 film Substances 0.000 claims abstract description 82
- 230000031700 light absorption Effects 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 229910052717 sulfur Inorganic materials 0.000 claims description 45
- 229910052760 oxygen Inorganic materials 0.000 claims description 44
- 239000004065 semiconductor Substances 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- 239000002019 doping agent Substances 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- 229910021476 group 6 element Inorganic materials 0.000 claims description 4
- 239000006096 absorbing agent Substances 0.000 claims description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 102
- 239000011787 zinc oxide Substances 0.000 description 51
- 239000011701 zinc Substances 0.000 description 23
- 238000000034 method Methods 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 9
- 229910052711 selenium Inorganic materials 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000002585 base Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 150000004770 chalcogenides Chemical class 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 150000004771 selenides Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0326—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Definitions
- the present invention relates to a compound thin film solar cell, and particularly to a compound thin film solar cell capable of achieving high photoelectric conversion efficiency.
- thin-film solar cells using an I-III-VI group 2 compound semiconductor or an I 2- (II-IV) -VI group 4 compound semiconductor have attracted attention as p-type light absorption layers.
- those using a chalcopyrite-structured I-III-VI 2 group compound semiconductor containing Cu, In, Ga, Se, and S are called CIS-based thin film solar cells.
- CIS-based thin film solar cells As a typical material, Cu ( In, Ga) Se 2 , Cu (In, Ga) (Se, S) 2 , CuInS 2, and the like.
- Those containing Ga in particular are also called CIGS thin film solar cells.
- a p-type absorber layer using a chalcogenide-based I 2- (II-IV) -VI 4 group compound semiconductor containing Cu, Zn, Sn, S or Se is called a CZTS-based thin film solar cell.
- Typical examples include Cu 2 ZnSnS 4 , Cu 2 ZnSnSe 4 , and Cu 2 ZnSn (S, Se) 4 .
- These compound-based thin-film solar cells use materials that are relatively inexpensive and easy to obtain, are relatively easy to manufacture, and have a large absorption coefficient in the visible to near-infrared wavelength range, resulting in high photoelectric conversion efficiency. Is expected to be a promising candidate for next-generation solar cells.
- a first electrode layer constituting a back electrode, a p-type light absorption layer, an n-type high-resistance buffer layer, and a second electrode layer constituting a light-receiving surface side electrode are formed on a substrate. It is formed by sequentially laminating.
- the n-type high resistance buffer layer can be formed of CdS, ZnS, InS, or the like, but CdS is often used from the viewpoint of having good bonding properties with the p-type light absorption layer.
- an InS layer is laminated on the CdS layer.
- the structure which does is known (refer nonpatent literature 1).
- the photoelectric conversion efficiency was improved to some extent by making the n-type high-resistance buffer layer a laminated structure of a CdS layer and an InS layer. There was no improvement.
- the present invention has been made to solve the above problems, and provides a compound-based thin film solar cell having excellent photoelectric conversion efficiency by finding a new configuration of an n-type high-resistance buffer layer. Is an issue.
- a compound thin film solar cell formed of a material having a lattice constant (lattice constant on the a-axis) close to the lattice constant.
- the first buffer layer may be formed of CdS
- the second buffer layer may be formed of Zn (O, S) or Sn (O, S).
- the first buffer layer may be formed of InS
- the second buffer layer may be formed of Zn (O, S) or Sn (O, S).
- the ZnO film may be formed of ZnO containing an n-type dopant.
- the ZnO film may be formed of intrinsic ZnO, and a ZnO film containing an n-type dopant may be further formed thereon.
- the ZnO film may be formed of intrinsic ZnO, and an ITO film may be further formed thereon.
- the p-type light absorption layer may be formed of a CZTS-based semiconductor containing at least Cu, Zn, Sn, and a group VI element.
- the p-type light absorption layer may be formed of a CIS-based semiconductor containing at least Cu, In, and a Group VI element.
- a ZnO (zinc oxide) film is formed on an n-type high resistance buffer layer, and the lattice constant of the n-type high resistance buffer layer is considerably larger than the lattice constant of the ZnO film.
- An open-circuit voltage loss occurs due to a mismatch in lattice constant between the n-type high resistance buffer layer and the ZnO film. Therefore, in the present invention, the n-type high-resistance buffer layer is composed of the first buffer layer and the second buffer layer, and the second buffer layer on the side in contact with the ZnO film is disposed on the ZnO film rather than the first buffer layer.
- the second buffer layer having a lattice constant closer to the lattice constant of ZnO than the first buffer layer comes into contact with the ZnO film, and mismatching of the lattice constant at the interface therebetween is greatly suppressed, and as a result
- the open circuit voltage loss can be reduced and the open circuit voltage can be improved.
- the lattice constant of the CdS buffer layer (lattice constant on the a-axis, hereinafter the same) is 5.82 ⁇ (hereinafter, ⁇ omitted), and the lattice constant of the ZnO film is 4.28. Furthermore, the lattice constant of InS is 7.62. Therefore, the inventors have a conventional solar cell structure in which an InS film is stacked on a CdS film and a ZnO film is further formed on the CdS film. We thought that the improvement of the power generation efficiency of the battery was obstructed.
- this problem is caused by a material having a lattice constant closer to the lattice constant of the ZnO film than CdS, for example, Zn (O, S) or Sn (O, S), between the CdS buffer layer and the ZnO film.
- This is solved by inserting the second buffer layer formed in step 1 in place of the InS buffer layer.
- lattice constant mismatch at the interface between the n-type high-resistance buffer layer and the ZnO film is greatly suppressed, and the open-circuit voltage and open-circuit voltage loss of the manufactured solar cell are improved, resulting in excellent photoelectric conversion efficiency. It becomes possible to obtain a compound-based thin film solar cell having
- the thickness of each layer is shown in a different relationship from the actual one for easy understanding.
- symbol shows the same or similar component.
- the present invention is not limited to this structure, and chalcogenide having a similar composition.
- the present invention is similarly applied to, for example, a CIS thin film solar cell and a CIGS thin film solar cell formed of a semiconductor.
- FIG. 1 is a schematic cross-sectional view showing the structure of a compound-based thin film solar cell according to an embodiment of the present invention.
- a CZT (SSe) -based light absorption layer is used for the p-type light absorption layer.
- Cu 2 ZnSn (S, Se) 4 .
- 1 is a glass substrate
- 2 is a metal back electrode layer made of a metal such as Mo
- 3 is a p-type CZT (SSe) light absorption layer
- 4 is an n-type high resistance buffer layer
- 5 is a ZnO film
- 6 shows an n-type transparent conductive film.
- the p-type CZT (SSe) -based light absorption layer 3 is formed by, for example, forming a metal precursor film by sequentially laminating Cu, Zn, and Sn on the back electrode layer 2 by a sputtering method, electron beam evaporation, or the like. It is formed by selenization. Furthermore, the CZT (SSe) -based light absorption layer 3 may be formed by another method called a solution coating method. In this method, a solution containing Cu, Zn, Sn, Se, and S is applied to the surface of the metal back electrode layer 2, annealed, sulfurized and / or selenized to form a p-type CZT (SSe) system. The light absorption layer 3 is formed.
- the n-type high resistance buffer layer 4 is formed of a first buffer layer 4A and a second buffer layer 4B made of CdS or InS.
- the second buffer layer 4B is formed using, for example, ZnS or SnS.
- the buffer layers 4A and 4B are usually formed using a solution growth method (CBD method).
- CBD method a thin film is deposited on a base material by immersing the base material in a solution containing a chemical species serving as a precursor and causing a heterogeneous reaction to proceed between the solution and the surface of the base material. Therefore, the buffer layers 4A and 4B after film formation contain O and OH instead of pure CdS, InS, ZnS, and SnS.
- these buffer layers are also called CdS buffer layers, InS buffer layers, ZnS buffer layers, and SnS buffer layers.
- a ZnO film 5 is formed of an intrinsic zinc oxide (i-ZnO) film having a thickness of about 50-100 nm, and an n-type transparent conductive film 6 has n-type conductivity and has a forbidden band width. Is formed to a thickness of 0.05 to 2.5 ⁇ m using a wide, transparent and low resistance material. Typically, there is a zinc oxide thin film (ZnO) or an ITO thin film. In the case of a ZnO film, a low resistance film is formed by adding a group III element (for example, Al, Ga, B) as a dopant.
- the n-type transparent conductive film 6 can also be formed by sputtering (DC, RF) or the like other than MOCVD.
- the intrinsic ZnO film 5 may be omitted.
- the n-type high resistance buffer layer 4 is formed of a first buffer layer 4A and a second buffer layer 4B made of CdS or InS.
- a material having a lattice constant B closer to the lattice constant K of ZnO constituting the intrinsic ZnO film 5 than the lattice constant A of the first buffer layer 4A is selected.
- the n-type high-resistance buffer layer 4 is formed by the first buffer layer 4A having the lattice constant A and the second buffer layer 4B having the lattice constant B that satisfies the above.
- FIG. 2 is a graph showing lattice constants of CdS, InS, Zn (O, S), and Sn (O, S).
- the horizontal axis indicates the lattice constant in angstroms ( ⁇ ), but the vertical axis has no special meaning. From FIG. 2, it can be seen that the lattice constant of CdS used as the material of the first buffer layer 4A is 5.82 and that of InS is 7.62.
- the lattice constant of ZnS (containing no oxygen), which is the material of the second buffer layer 4B, is 5.41, and the lattice constant increases as the content ratio of O in Zn (O, S) increases. There is a tendency to become smaller.
- the lattice constant of Sn (O, S), which is another example of the second buffer layer 4B, is 4.33 in the case of SnS, and decreases as the oxygen concentration increases, and 3.77 in SnO. It becomes.
- Zn (O, S) indicates that this material is a mixed crystal of ZnO and ZnS
- Sn (O, S) indicates that it is a mixed crystal of SnO and SnS.
- the lattice constant A of the first buffer layer 4A and ZnO The difference from the lattice constant K is shown in FIG. 2 as follows:
- 1.54
- the difference between the lattice constant B of the second buffer layer 4B and the lattice constant K of ZnO is as follows when the oxygen content in Zn (O, S) is 0:
- 1.13
- is satisfied.
- mixed crystal Zn (O, S) is an appropriate second buffer layer material when the first buffer layer is CdS.
- between the first buffer layer 4A and the ZnO film is 1.54 from FIG. 2, and the lattice constant B of the second buffer layer 4B and the lattice of ZnO are
- K is that when the oxygen content ratio in Sn (O, S) is 0,
- 0.05
- is satisfied.
- 0.51
- both the n-type high resistance buffer layer 4 and the mismatch of the lattice constant with the ZnO film 5 is suppressed, and it becomes possible to reduce the open-circuit voltage loss and thus improve the open-circuit voltage.
- the second buffer layer is formed of Sn (O, S)
- the first buffer layer 4A is formed of InS
- the second buffer layer 4B is formed of Zn (O, S) or Sn (O, S).
- the lattice constant of InS is 7.62, which is larger than the lattice constant of CdS. Therefore, the lattice constant of the second buffer layer 4B is closer to the lattice constant of ZnO than the lattice constant of the first buffer layer 4A. Become.
- the lattice constant mismatch between the n-type high-resistance buffer layer 4 and the ZnO film is suppressed, and it is possible to reduce the open-circuit voltage loss and thus improve the open-circuit voltage.
- the present inventors conducted the following experiment in order to confirm the effect of improving the photoelectric conversion efficiency in the compound thin film solar cell having the structure shown in FIG. That is, two solar cell samples having the characteristics of the present invention and two solar cell samples not having the characteristics of the present invention were formed, and their electrical characteristics were measured.
- Sample 1 and Sample 2 are solar cell samples that do not have the characteristics of the present invention
- Sample 3 and Sample 4 are solar cell samples that have the characteristics of the present invention.
- the characteristics of each sample are as follows.
- ⁇ Sample 1> The entire n-type high resistance buffer layer is formed of CdS.
- ⁇ Sample 2> An n-type high resistance buffer layer is formed by stacking CdS and InS.
- An n-type high resistance buffer layer is formed of a first buffer layer made of CdS and a second buffer layer made of Zn (O, S).
- An n-type high resistance buffer layer is formed of a first buffer layer made of CdS and a second buffer layer made of Sn (O, S).
- the n-type high resistance buffer layer is formed by the CBD method in any sample, and the film thickness is about 70 nm as a whole.
- the first buffer layer (CdS) has a thickness of about 50 nm
- the second buffer layer (Zn (O, S) or Sn (O, S)) has a thickness of about 20 nm. Degree.
- the structure and manufacturing method of each layer other than the n-type high resistance buffer layer were the same in Samples 1 to 4.
- Table 2 summarizes the structure of each part and the film forming method, excluding the configuration of the n-type high resistance layer and the film forming method.
- Eg represents the band gap of the light absorption layer calculated from an external quantum efficiency (EQE) curve.
- Voc indicates an open circuit voltage
- Voc and def indicate an open circuit voltage loss obtained from Eg-Voc.
- the loss rate indicates the ratio of the open circuit voltage loss Voc, def to the band gap Eg, obtained by Voc, def / Eg.
- the experiment shown in Table 1 relates to the case where a CdS film is formed as the first buffer layer on the p-type light absorption layer as Samples 3 and 4 according to the present invention, but instead of the CdS film, ZnO is used. Even when a film having a lattice constant larger than the lattice constant is formed by the first buffer layer, the compound-based thin film solar cell according to the present invention can be configured.
- a compound system that can reduce the open-circuit voltage loss by forming an InS film as the first buffer layer and forming Sn (O, S) or Zn (O, S) thereon.
- a thin film solar cell can be obtained.
- the difference in lattice constant between the InS film and the ZnO film is 3.34 (7.62-4.28). It becomes.
- a second buffer layer having a lattice constant closer to that of the ZnO film than the InS film for example, Sn (O, When S) or Zn (O, S)
- the difference in lattice constant between the ZnO film and the second buffer layer becomes smaller than 3.34 described above.
- the mismatch of the lattice constant between the n-type high resistance buffer layer and the ZnO film is suppressed, and it becomes possible to reduce the open-circuit voltage loss and thus improve the open-circuit voltage.
- FIG. 3 is a schematic cross-sectional view showing the structure of a compound thin film solar cell according to another embodiment of the present invention.
- the transparent conductive film 6 ' is formed of ZnO containing an n-type dopant. Therefore, the n-type ZnO film 6 'can be directly formed on the second buffer layer 4B without forming the i-ZnO film.
- the structure of the first and second buffer layers 4A and 4B is the same as that of the solar cell shown in FIG.
- the samples 3 and 4 according to the present invention in Table 1 include the p-type light absorption layer 3 having a composition of Cu 2 ZnSn (S, Se) 4.
- the present invention is not limited to this example. It is clear that the same effect can be obtained even when Cu 2 ZnSnSe 4 or Cu 2 ZnSnS 4 is used.
- a metal precursor film may be formed on the metal back electrode layer, and then the metal precursor film may be selenized and / or sulfurized.
- a simultaneous vapor deposition method or an EB vapor deposition method may be used in addition to the sputtering method.
- the substrate 1, the metal back electrode layer 2, and the n-type transparent conductive film 6 are not limited to the examples shown in Table 2.
- a metal substrate such as a stainless plate, a polyimide resin substrate, or the like can be used.
- a method for forming the metal back electrode layer 2 there are an electron beam evaporation method, an electron layer deposition method (ALD method) and the like in addition to the DC sputtering method described in Table 2.
- ALD method electron layer deposition method
- a high corrosion resistance and high melting point metal such as chromium (Cr), titanium (Ti), or the like may be used.
- the same effect can be expected when the light absorption layer is formed of a CIS semiconductor or CIGS semiconductor instead of the CZTS semiconductor.
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
|B-K|<|A-K|
を満足する、格子定数Aを有する第1のバッファ層4Aと、格子定数Bを有する第2のバッファ層4Bとでn型高抵抗バッファ層4を形成する。
|A-K|=|5.82-4.28|=1.54
となり、一方、第2のバッファ層4Bの格子定数BとZnOの格子定数Kとの差は、Zn(O,S)における酸素含有量が0の場合、
|B-K|=|5.41-4.28|=1.13
となって、|B-K|<|A-K|の関係を満足する。Zn(O,S)における酸素含有量が100%の場合は、|B-K|が0となるため、当然、|B-K|<|A-K|の関係を満足する。従って、混晶Zn(O,S)は第1のバッファ層がCdSである場合、適切な第2のバッファ層材料となる。
|B-K|=|4.33-4.28|=0.05
となって、|B-K|<|A-K|の関係を満足する。Sn(O,S)における酸素含有量が100%の場合は、|B-K|=|3.77-4.28|=0.51となるため、|B-K|<|A-K|の関係を満足する。
<サンプル1>n型高抵抗バッファ層全体をCdSで形成する。
<サンプル2>n型高抵抗バッファ層をCdSとInSの積層で形成する。
<サンプル3>n型高抵抗バッファ層を、CdSを材料とする第1のバッファ層とZn(O,S)を材料とする第2のバッファ層で形成する。
<サンプル4>n型高抵抗バッファ層を、CdSを材料とする第1のバッファ層とSn(O,S)を材料とする第2のバッファ層で形成する。
2 金属裏面電極層
3 p型CZTS光吸収層
4 n型高抵抗バッファ層
4A 第1のバッファ層
4B 第2のバッファ層
5 i-ZnO膜
6 n型透明導電膜
Claims (9)
- 基板と、
前記基板上に形成された裏面電極層と、
前記裏面電極層上に形成されたp型光吸収層と、
前記p型光吸収層上に形成されたn型高抵抗バッファ層と、
前記n型高抵抗バッファ層上に形成されたZnO膜と、を備え、
前記n型高抵抗バッファ層は、前記p型光吸収層上に形成された第1のバッファ層と当該第1のバッファ層上に形成された第2のバッファ層を含み、前記第2のバッファ層は、前記第1のバッファ層よりも前記ZnO膜の格子定数に近い格子定数を有する材料で形成される、化合物系薄膜太陽電池。 - 請求項1に記載の化合物系薄膜太陽電池において、前記第1のバッファ層はCdSで形成され、前記第2のバッファ層はZn(O,S)又はSn(O,S)で形成される、化合物系薄膜太陽電池。
- 請求項1に記載の化合物系薄膜太陽電池において、前記第1のバッファ層はInSで形成され、前記第2のバッファ層はZn(O,S)又はSn(O,S)で形成される、化合物系薄膜太陽電池。
- 請求項1に記載の化合物系薄膜太陽電池において、前記ZnO膜は、n型ドーパントを含むZnOで形成される、化合物系薄膜太陽電池。
- 請求項1に記載の化合物系薄膜太陽電池において、前記ZnO膜は真性ZnOで形成され、前記ZnO膜上にはn型ドーパントを含むZnO膜が更に形成される、化合物系薄膜太陽電池。
- 請求項1に記載の化合物系薄膜太陽電池において、前記ZnO膜は真性ZnOで形成され、前記ZnO膜上にはITO膜が更に形成される、化合物系薄膜太陽電池。
- 請求項1に記載の化合物系薄膜太陽電池において、前記p型光吸収層は、少なくともCu,Zn,Sn及びVI族元素を含むCZTS系半導体で形成される、化合物系薄膜太陽電池。
- 請求項1に記載の化合物系薄膜太陽電池において、前記p型光吸収層は、少なくともCu、In,およびVI族元素を含むCIS系半導体で形成される、化合物系薄膜太陽電池。
- 請求項2に記載の化合物系薄膜太陽電池において、前記第1のバッファ層の膜厚は20-100nmであり、前記第2のバッファ層の膜厚は10-50nmである、化合物系薄膜太陽電池。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE112015000755.5T DE112015000755T5 (de) | 2014-02-12 | 2015-02-12 | Dünnfilm-Solarzelle auf Verbindungsbasis |
JP2015562848A JPWO2015122448A1 (ja) | 2014-02-12 | 2015-02-12 | 化合物系薄膜太陽電池 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/178,886 US9240501B2 (en) | 2014-02-12 | 2014-02-12 | Compound-based thin film solar cell |
US14/178886 | 2014-02-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2015122448A1 true WO2015122448A1 (ja) | 2015-08-20 |
Family
ID=53775700
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2015/053799 WO2015122448A1 (ja) | 2014-02-12 | 2015-02-12 | 化合物系薄膜太陽電池 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9240501B2 (ja) |
JP (1) | JPWO2015122448A1 (ja) |
DE (1) | DE112015000755T5 (ja) |
WO (1) | WO2015122448A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170131193A (ko) * | 2016-05-20 | 2017-11-29 | 삼성전자주식회사 | 유기 광전 소자 및 이미지 센서 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102491494B1 (ko) | 2015-09-25 | 2023-01-20 | 삼성전자주식회사 | 유기 광전 소자용 화합물 및 이를 포함하는 유기 광전 소자 및 이미지 센서 |
KR102529631B1 (ko) | 2015-11-30 | 2023-05-04 | 삼성전자주식회사 | 유기 광전 소자 및 이미지 센서 |
KR102557864B1 (ko) | 2016-04-06 | 2023-07-19 | 삼성전자주식회사 | 화합물, 및 이를 포함하는 유기 광전 소자, 이미지 센서 및 전자 장치 |
KR102605375B1 (ko) | 2016-06-29 | 2023-11-22 | 삼성전자주식회사 | 유기 광전 소자 및 이미지 센서 |
KR102589215B1 (ko) | 2016-08-29 | 2023-10-12 | 삼성전자주식회사 | 유기 광전 소자, 이미지 센서 및 전자 장치 |
US11145822B2 (en) | 2017-10-20 | 2021-10-12 | Samsung Electronics Co., Ltd. | Compound and photoelectric device, image sensor, and electronic device including the same |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005317563A (ja) * | 2004-04-26 | 2005-11-10 | Matsushita Electric Ind Co Ltd | 太陽電池 |
JP2011205098A (ja) * | 2010-03-25 | 2011-10-13 | Rohm & Haas Electronic Materials Llc | 薄膜太陽電池 |
JP2011205086A (ja) * | 2010-03-02 | 2011-10-13 | Osaka Gas Co Ltd | 量産に適した方法で製造可能な光電変換素子 |
JP2012028650A (ja) * | 2010-07-26 | 2012-02-09 | Toyota Central R&D Labs Inc | 光電素子及びその製造方法 |
JP2012235024A (ja) * | 2011-05-06 | 2012-11-29 | Toshiba Corp | 光電変換素子および太陽電池 |
JP2013070032A (ja) * | 2011-09-05 | 2013-04-18 | Fujifilm Corp | バッファ層の製造方法および光電変換素子の製造方法 |
JP2013106013A (ja) * | 2011-11-16 | 2013-05-30 | Toshiba Corp | 光電変換素子及び太陽電池 |
JP2013118265A (ja) * | 2011-12-02 | 2013-06-13 | Showa Shell Sekiyu Kk | 薄膜太陽電池 |
JP2013529378A (ja) * | 2010-04-19 | 2013-07-18 | 韓国生産技術研究院 | 太陽電池の製造方法 |
JP2013151728A (ja) * | 2012-01-26 | 2013-08-08 | Fujifilm Corp | 絶縁層付金属基板およびその製造方法並びに半導体素子 |
JP2013211490A (ja) * | 2012-03-30 | 2013-10-10 | Honda Motor Co Ltd | カルコパイライト型太陽電池及びその製造方法 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE0301350D0 (sv) * | 2003-05-08 | 2003-05-08 | Forskarpatent I Uppsala Ab | A thin-film solar cell |
JP4841173B2 (ja) * | 2005-05-27 | 2011-12-21 | 昭和シェル石油株式会社 | Cis系薄膜太陽電池の高抵抗バッファ層・窓層連続製膜方法及び製膜装置 |
WO2009110093A1 (ja) * | 2008-03-07 | 2009-09-11 | 昭和シェル石油株式会社 | Cis系太陽電池の集積構造 |
WO2009110092A1 (ja) * | 2008-03-07 | 2009-09-11 | 昭和シェル石油株式会社 | Cis系太陽電池の積層構造、及び集積構造 |
DE102008024230A1 (de) * | 2008-05-19 | 2009-11-26 | Avancis Gmbh & Co. Kg | Schichtsystem für Solarzellen |
WO2010088446A2 (en) * | 2009-02-02 | 2010-08-05 | Dow Global Technologies Inc. | Robust photovoltaic cell |
US20120199173A1 (en) * | 2009-07-31 | 2012-08-09 | Aqt Solar, Inc. | Interconnection Schemes for Photovoltaic Cells |
JP5421752B2 (ja) * | 2009-12-03 | 2014-02-19 | 株式会社カネカ | 化合物半導体太陽電池 |
JP2011155146A (ja) * | 2010-01-27 | 2011-08-11 | Fujifilm Corp | 太陽電池およびその製造方法 |
JP5054157B2 (ja) * | 2010-06-17 | 2012-10-24 | 昭和シェル石油株式会社 | Cis系薄膜太陽電池 |
US8840770B2 (en) * | 2010-09-09 | 2014-09-23 | International Business Machines Corporation | Method and chemistry for selenium electrodeposition |
US8426241B2 (en) * | 2010-09-09 | 2013-04-23 | International Business Machines Corporation | Structure and method of fabricating a CZTS photovoltaic device by electrodeposition |
JP5874645B2 (ja) * | 2010-12-27 | 2016-03-02 | 凸版印刷株式会社 | 化合物半導体薄膜太陽電池及びその製造方法 |
US9087954B2 (en) * | 2011-03-10 | 2015-07-21 | Saint-Gobain Glass France | Method for producing the pentanary compound semiconductor CZTSSe, and thin-film solar cell |
JP2012204617A (ja) * | 2011-03-25 | 2012-10-22 | Idemitsu Kosan Co Ltd | 光起電力素子、及び当該光起電力素子の製造方法 |
KR101154786B1 (ko) * | 2011-05-31 | 2012-06-18 | 중앙대학교 산학협력단 | 태양전지 및 이의 제조방법 |
JP2012256881A (ja) * | 2011-06-07 | 2012-12-27 | Korea Electronics Telecommun | 太陽電池モジュールの製造方法 |
JP5911487B2 (ja) * | 2011-06-16 | 2016-04-27 | ソーラーフロンティア株式会社 | Czts系薄膜太陽電池及びその製造方法 |
KR20130040358A (ko) * | 2011-10-14 | 2013-04-24 | 한국전자통신연구원 | 태양전지 |
US20130269764A1 (en) * | 2012-04-12 | 2013-10-17 | International Business Machines Corporation | Back Contact Work Function Modification for Increasing CZTSSe Thin Film Photovoltaic Efficiency |
US20130319502A1 (en) * | 2012-05-31 | 2013-12-05 | Aqt Solar, Inc. | Bifacial Stack Structures for Thin-Film Photovoltaic Cells |
US20140007934A1 (en) * | 2012-07-06 | 2014-01-09 | Electronics And Telecommunications Research Institute | Thin film solar cell and method of fabricating the same |
US9685567B2 (en) * | 2012-07-20 | 2017-06-20 | Nutech Ventures | Nanocomposite photodetector |
US8987590B2 (en) * | 2012-08-01 | 2015-03-24 | International Business Machines Corporation | Thin film solar cells |
US20140230888A1 (en) * | 2013-02-19 | 2014-08-21 | Samsung Sdi Co., Ltd. | Solar cell and method of manufacturing the same |
KR20140109530A (ko) * | 2013-02-27 | 2014-09-16 | 한국전자통신연구원 | 박막 태양전지 |
US9362429B2 (en) * | 2013-04-30 | 2016-06-07 | Alliance For Sustainable Energy, Llc | Photovoltaic semiconductor materials based on alloys of tin sulfide, and methods of production |
-
2014
- 2014-02-12 US US14/178,886 patent/US9240501B2/en active Active
-
2015
- 2015-02-12 WO PCT/JP2015/053799 patent/WO2015122448A1/ja active Application Filing
- 2015-02-12 JP JP2015562848A patent/JPWO2015122448A1/ja active Pending
- 2015-02-12 DE DE112015000755.5T patent/DE112015000755T5/de not_active Withdrawn
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005317563A (ja) * | 2004-04-26 | 2005-11-10 | Matsushita Electric Ind Co Ltd | 太陽電池 |
JP2011205086A (ja) * | 2010-03-02 | 2011-10-13 | Osaka Gas Co Ltd | 量産に適した方法で製造可能な光電変換素子 |
JP2011205098A (ja) * | 2010-03-25 | 2011-10-13 | Rohm & Haas Electronic Materials Llc | 薄膜太陽電池 |
JP2013529378A (ja) * | 2010-04-19 | 2013-07-18 | 韓国生産技術研究院 | 太陽電池の製造方法 |
JP2012028650A (ja) * | 2010-07-26 | 2012-02-09 | Toyota Central R&D Labs Inc | 光電素子及びその製造方法 |
JP2012235024A (ja) * | 2011-05-06 | 2012-11-29 | Toshiba Corp | 光電変換素子および太陽電池 |
JP2013070032A (ja) * | 2011-09-05 | 2013-04-18 | Fujifilm Corp | バッファ層の製造方法および光電変換素子の製造方法 |
JP2013106013A (ja) * | 2011-11-16 | 2013-05-30 | Toshiba Corp | 光電変換素子及び太陽電池 |
JP2013118265A (ja) * | 2011-12-02 | 2013-06-13 | Showa Shell Sekiyu Kk | 薄膜太陽電池 |
JP2013151728A (ja) * | 2012-01-26 | 2013-08-08 | Fujifilm Corp | 絶縁層付金属基板およびその製造方法並びに半導体素子 |
JP2013211490A (ja) * | 2012-03-30 | 2013-10-10 | Honda Motor Co Ltd | カルコパイライト型太陽電池及びその製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170131193A (ko) * | 2016-05-20 | 2017-11-29 | 삼성전자주식회사 | 유기 광전 소자 및 이미지 센서 |
KR102673658B1 (ko) * | 2016-05-20 | 2024-06-10 | 삼성전자주식회사 | 유기 광전 소자 및 이미지 센서 |
Also Published As
Publication number | Publication date |
---|---|
US9240501B2 (en) | 2016-01-19 |
JPWO2015122448A1 (ja) | 2017-03-30 |
US20150228811A1 (en) | 2015-08-13 |
DE112015000755T5 (de) | 2016-11-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2015122448A1 (ja) | 化合物系薄膜太陽電池 | |
US8575478B2 (en) | Integrated structure of CIS based solar cell | |
US10056507B2 (en) | Photovoltaic device with a zinc magnesium oxide window layer | |
US9166077B2 (en) | Thin film solar cell | |
TWI535047B (zh) | Photoelectric conversion elements and solar cells | |
JP6061765B2 (ja) | 太陽電池の製造方法 | |
US20160087118A1 (en) | Photoelectric conversion device, and solar cell | |
US20170243999A1 (en) | Solar cell | |
WO2013077417A1 (ja) | Czts系薄膜太陽電池及びその製造方法 | |
JP2014209586A (ja) | 薄膜太陽電池及びその製造方法 | |
KR20150048728A (ko) | 화합물 태양 전지 및 그 제조 방법 | |
KR101081270B1 (ko) | 태양전지 및 이의 제조방법 | |
JP6133691B2 (ja) | 太陽電池 | |
WO2011158900A1 (ja) | Cis系薄膜太陽電池 | |
US20120125425A1 (en) | Compound semiconductor solar cell and method of manufacturing the same | |
US20120118384A1 (en) | Cis-based thin film solar cell | |
US20140130858A1 (en) | Solar cell | |
US20120067422A1 (en) | Photovoltaic device with a metal sulfide oxide window layer | |
KR101708282B1 (ko) | CZTSe계 박막을 이용한 태양전지 및 이의 제조 방법 | |
JP5258951B2 (ja) | 薄膜太陽電池 | |
KR101300642B1 (ko) | 태양전지 | |
CN113228304A (zh) | 光电转换元件及光电转换元件的制造方法 | |
WO2017068923A1 (ja) | 光電変換素子 | |
US20120125426A1 (en) | Compound semiconductor solar cell | |
JP2014112633A (ja) | 化合物系薄膜太陽電池及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 15748547 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2015562848 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 112015000755 Country of ref document: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 15748547 Country of ref document: EP Kind code of ref document: A1 |