JP6061765B2 - 太陽電池の製造方法 - Google Patents
太陽電池の製造方法 Download PDFInfo
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- JP6061765B2 JP6061765B2 JP2013085922A JP2013085922A JP6061765B2 JP 6061765 B2 JP6061765 B2 JP 6061765B2 JP 2013085922 A JP2013085922 A JP 2013085922A JP 2013085922 A JP2013085922 A JP 2013085922A JP 6061765 B2 JP6061765 B2 JP 6061765B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 230000031700 light absorption Effects 0.000 claims description 75
- 229910052717 sulfur Inorganic materials 0.000 claims description 38
- 239000011669 selenium Substances 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 28
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 25
- 239000011593 sulfur Substances 0.000 claims description 25
- 229910052711 selenium Inorganic materials 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 18
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 12
- 239000007864 aqueous solution Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 150000002898 organic sulfur compounds Chemical class 0.000 claims description 10
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 6
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- YUKQRDCYNOVPGJ-UHFFFAOYSA-N thioacetamide Chemical compound CC(N)=S YUKQRDCYNOVPGJ-UHFFFAOYSA-N 0.000 claims description 3
- DLFVBJFMPXGRIB-UHFFFAOYSA-N thioacetamide Natural products CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 claims description 3
- 150000003839 salts Chemical class 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 description 28
- 125000004434 sulfur atom Chemical group 0.000 description 20
- 229910052798 chalcogen Inorganic materials 0.000 description 18
- 150000001787 chalcogens Chemical class 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 18
- 125000004429 atom Chemical group 0.000 description 12
- 239000010409 thin film Substances 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 239000012808 vapor phase Substances 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000002131 composite material Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 239000002585 base Substances 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- 238000005987 sulfurization reaction Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910000058 selane Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005486 sulfidation Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910007610 Zn—Sn Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- BRWIZMBXBAOCCF-UHFFFAOYSA-N hydrazinecarbothioamide Chemical compound NNC(N)=S BRWIZMBXBAOCCF-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0326—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
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- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
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Description
11 基板
12 第1の電極層
13 CZTS系光吸収層
13a 領域
14 バッファ層
15 第2の電極層
Claims (5)
- 基板上に第1の電極層を形成し、
前記第1の電極層上に、セレンを含むp型のCZTS系光吸収層を形成し、
前記CZTS系光吸収層の表面を、有機硫黄化合物を含む水溶液と接触させて、前記CZTS系光吸収層の表面における硫黄濃度を増加させ、
前記CZTS系光吸収層上に、n型のバッファ層を形成し、
前記バッファ層上に、第2の電極層を形成する、
各ステップを備える太陽電池の製造方法。 - 前記有機硫黄化合物は、チオウレア又はチオアセトアミド又はこれらの混合物を含む請求項1に記載の太陽電池の製造方法。
- 前記水溶液は、Cd又はZnの金属塩を含まない請求項2に記載の太陽電池の製造方法。
- 前記バッファ層の伝導帯の下端のエネルギー準位は、硫黄濃度及びセレン濃度の和に対する硫黄濃度の比を増加させる前の前記CZTS系光吸収層の伝導帯の下端のエネルギー準位よりも高い請求項1〜3の何れか一項に記載の太陽電池の製造方法。
- 前記バッファ層として、CdS系バッファ層又はZnS系バッファ層を形成する請求項4に記載の太陽電池の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013085922A JP6061765B2 (ja) | 2013-04-16 | 2013-04-16 | 太陽電池の製造方法 |
US14/784,420 US20170117424A1 (en) | 2013-04-16 | 2014-04-15 | Solar cell and method for manufacturing solar cell |
EP14784884.0A EP2988337A4 (en) | 2013-04-16 | 2014-04-15 | SOLAR CELL AND METHOD FOR PRODUCING A SOLAR CELL |
PCT/JP2014/060732 WO2014171458A1 (ja) | 2013-04-16 | 2014-04-15 | 太陽電池及び太陽電池の製造方法 |
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Application Number | Priority Date | Filing Date | Title |
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JP2013085922A JP6061765B2 (ja) | 2013-04-16 | 2013-04-16 | 太陽電池の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2014209513A JP2014209513A (ja) | 2014-11-06 |
JP6061765B2 true JP6061765B2 (ja) | 2017-01-18 |
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JP2013085922A Expired - Fee Related JP6061765B2 (ja) | 2013-04-16 | 2013-04-16 | 太陽電池の製造方法 |
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US (1) | US20170117424A1 (ja) |
EP (1) | EP2988337A4 (ja) |
JP (1) | JP6061765B2 (ja) |
WO (1) | WO2014171458A1 (ja) |
Families Citing this family (8)
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KR102491494B1 (ko) | 2015-09-25 | 2023-01-20 | 삼성전자주식회사 | 유기 광전 소자용 화합물 및 이를 포함하는 유기 광전 소자 및 이미지 센서 |
KR102529631B1 (ko) | 2015-11-30 | 2023-05-04 | 삼성전자주식회사 | 유기 광전 소자 및 이미지 센서 |
CN105552172A (zh) * | 2016-02-03 | 2016-05-04 | 陕西煤业化工技术研究院有限责任公司 | 一种铜锌锡硫薄膜及其制备方法 |
KR102557864B1 (ko) | 2016-04-06 | 2023-07-19 | 삼성전자주식회사 | 화합물, 및 이를 포함하는 유기 광전 소자, 이미지 센서 및 전자 장치 |
US10236461B2 (en) * | 2016-05-20 | 2019-03-19 | Samsung Electronics Co., Ltd. | Organic photoelectronic device and image sensor |
KR102605375B1 (ko) | 2016-06-29 | 2023-11-22 | 삼성전자주식회사 | 유기 광전 소자 및 이미지 센서 |
KR102589215B1 (ko) | 2016-08-29 | 2023-10-12 | 삼성전자주식회사 | 유기 광전 소자, 이미지 센서 및 전자 장치 |
US11145822B2 (en) | 2017-10-20 | 2021-10-12 | Samsung Electronics Co., Ltd. | Compound and photoelectric device, image sensor, and electronic device including the same |
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EP2435359A4 (en) * | 2009-05-26 | 2016-04-20 | Purdue Research Foundation | SYNTHESIS OF SEVERAL DIFFERENT CHALCOGENIDE NANOPARTICLES WITH CU, ZN, SN, S AND SE |
US20120100663A1 (en) * | 2010-10-26 | 2012-04-26 | International Business Machines Corporation | Fabrication of CuZnSn(S,Se) Thin Film Solar Cell with Valve Controlled S and Se |
JP2012160556A (ja) | 2011-01-31 | 2012-08-23 | Showa Shell Sekiyu Kk | Czts系薄膜太陽電池の製造方法 |
US9087954B2 (en) * | 2011-03-10 | 2015-07-21 | Saint-Gobain Glass France | Method for producing the pentanary compound semiconductor CZTSSe, and thin-film solar cell |
JP5762148B2 (ja) | 2011-06-03 | 2015-08-12 | ソーラーフロンティア株式会社 | Czts系薄膜太陽電池の製造方法 |
JP5911487B2 (ja) * | 2011-06-16 | 2016-04-27 | ソーラーフロンティア株式会社 | Czts系薄膜太陽電池及びその製造方法 |
JP5709662B2 (ja) * | 2011-06-16 | 2015-04-30 | ソーラーフロンティア株式会社 | Czts系薄膜太陽電池の製造方法 |
US20130164918A1 (en) * | 2011-12-21 | 2013-06-27 | Intermolecular, Inc. | Absorbers For High-Efficiency Thin-Film PV |
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2014
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JP2014209513A (ja) | 2014-11-06 |
EP2988337A1 (en) | 2016-02-24 |
US20170117424A1 (en) | 2017-04-27 |
EP2988337A4 (en) | 2016-11-30 |
WO2014171458A1 (ja) | 2014-10-23 |
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