JP5054157B2 - Cis系薄膜太陽電池 - Google Patents
Cis系薄膜太陽電池 Download PDFInfo
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- JP5054157B2 JP5054157B2 JP2010138356A JP2010138356A JP5054157B2 JP 5054157 B2 JP5054157 B2 JP 5054157B2 JP 2010138356 A JP2010138356 A JP 2010138356A JP 2010138356 A JP2010138356 A JP 2010138356A JP 5054157 B2 JP5054157 B2 JP 5054157B2
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- cis
- intermediate layer
- solar cell
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- film solar
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- 239000010409 thin film Substances 0.000 title claims description 37
- 239000010408 film Substances 0.000 claims description 47
- 230000031700 light absorption Effects 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 25
- 229910052717 sulfur Inorganic materials 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 7
- 239000011593 sulfur Substances 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 6
- 229910021476 group 6 element Inorganic materials 0.000 claims description 6
- 238000000034 method Methods 0.000 description 15
- 238000013507 mapping Methods 0.000 description 12
- 239000011669 selenium Substances 0.000 description 12
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 229910052711 selenium Inorganic materials 0.000 description 8
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005486 sulfidation Methods 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 240000002329 Inga feuillei Species 0.000 description 3
- 229910016001 MoSe Inorganic materials 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000224 chemical solution deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910000846 In alloy Inorganic materials 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005987 sulfurization reaction Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005430 electron energy loss spectroscopy Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 125000004354 sulfur functional group Chemical group 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Description
さらに他の従来技術としては、パターン1の幅を広くすることにより、パターン1に隣接する裏面電極層間の距離をとり、シャントパスにかかるリーク電流の影響を低減する方法がある。
また、パターン1の幅を広くすることは、発電面積を小さくすることに繋がり、結果、変換効率の低下となる。
12 基板
14 裏面電極層
16 光吸収層
18 透明導電膜
20 中間層
20a 第1の中間層部
20b 第2の中間層部
本発明にかかるCIS形薄膜太陽電池は、基板上に積層された太陽電池素子を、分割溝によって複数の単位セル(以下、「セル」ともいう)に分割し、各セルを直列接続した集積構造をとる。
次に、本実施形態にかかるCIS系薄膜太陽電池10の製造方法について、図7〜図9を参照して説明する。
Claims (3)
- 基板上に、分割溝によって分割された裏面電極層と、CIS系光吸収層と、透明導電膜とが順に形成されたCIS系薄膜太陽電池であって、
上記裏面電極層は、上記CIS系光吸収層に接する表面に、上記裏面電極層を構成する金属と上記CIS系光吸収層を構成するVI族元素との化合物からなる中間層を備え、
上記中間層は、上記基板に対して平行な上面に形成された第1の中間層部と、上記基板に対して垂直であり上記分割溝に対向する側面に形成された第2の中間層部と、を備え、
上記第2の中間層部の膜厚が、上記第1の中間層部の膜厚よりも大きいことを特徴とする、CIS系薄膜太陽電池。 - 上記第2の中間層部の膜厚が、上記第1の中間層部の膜厚よりも2倍以上大きいことを特徴とする、請求項1に記載のCIS系薄膜太陽電池。
- 上記裏面電極層がMoからなり、
上記VI族元素が少なくとも硫黄を含み、
上記中間層が、MoS2層、およびMo(SSe)2層の少なくともいずれか一方からなる、ことを特徴とする、請求項1または2に記載のCIS系薄膜太陽電池。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010138356A JP5054157B2 (ja) | 2010-06-17 | 2010-06-17 | Cis系薄膜太陽電池 |
DE112011102039T DE112011102039T5 (de) | 2010-06-17 | 2011-06-16 | Dünnfilm-Solarzelle auf CIS-Basis |
KR1020137001343A KR20130098281A (ko) | 2010-06-17 | 2011-06-16 | Cis 계 박막 태양 전지 |
US13/702,458 US9269841B2 (en) | 2010-06-17 | 2011-06-16 | CIS-based thin film solar cell |
PCT/JP2011/063797 WO2011158900A1 (ja) | 2010-06-17 | 2011-06-16 | Cis系薄膜太陽電池 |
CN201180029782.6A CN103003955B (zh) | 2010-06-17 | 2011-06-16 | Cis类薄膜太阳电池 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010138356A JP5054157B2 (ja) | 2010-06-17 | 2010-06-17 | Cis系薄膜太陽電池 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012004370A JP2012004370A (ja) | 2012-01-05 |
JP5054157B2 true JP5054157B2 (ja) | 2012-10-24 |
Family
ID=45348293
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010138356A Active JP5054157B2 (ja) | 2010-06-17 | 2010-06-17 | Cis系薄膜太陽電池 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9269841B2 (ja) |
JP (1) | JP5054157B2 (ja) |
KR (1) | KR20130098281A (ja) |
CN (1) | CN103003955B (ja) |
DE (1) | DE112011102039T5 (ja) |
WO (1) | WO2011158900A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9240501B2 (en) * | 2014-02-12 | 2016-01-19 | Solar Frontier K.K. | Compound-based thin film solar cell |
NL2014040B1 (en) * | 2014-12-23 | 2016-10-12 | Stichting Energieonderzoek Centrum Nederland | Method of making a curent collecting grid for solar cells. |
CN105140320B (zh) * | 2015-06-26 | 2017-06-23 | 厦门神科太阳能有限公司 | 一种cigs基薄膜太阳能电池及其制造方法 |
KR102352100B1 (ko) * | 2017-04-19 | 2022-01-14 | (씨엔비엠) 벵부 디자인 앤드 리서치 인스티튜트 포 글래스 인더스트리 컴퍼니 리미티드 | 박막 태양 전지용 층 구조 생산 방법 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2986875B2 (ja) | 1990-09-07 | 1999-12-06 | キヤノン株式会社 | 集積化太陽電池 |
JPH09260695A (ja) * | 1996-03-19 | 1997-10-03 | Canon Inc | 光起電力素子アレーの製造方法 |
JP4379560B2 (ja) * | 2001-01-05 | 2009-12-09 | 富士電機システムズ株式会社 | 薄膜太陽電池とその製造方法 |
JP2002319686A (ja) * | 2001-04-23 | 2002-10-31 | Matsushita Electric Ind Co Ltd | 集積型薄膜太陽電池の製造方法 |
JP2004103959A (ja) * | 2002-09-11 | 2004-04-02 | Matsushita Electric Ind Co Ltd | 太陽電池およびその製造方法 |
JP4064340B2 (ja) * | 2003-12-25 | 2008-03-19 | 昭和シェル石油株式会社 | 集積型薄膜太陽電池の製造方法 |
JP4829926B2 (ja) * | 2008-05-29 | 2011-12-07 | 本田技研工業株式会社 | 太陽電池及び太陽電池の製造方法 |
JP2009170928A (ja) * | 2009-02-20 | 2009-07-30 | Showa Shell Sekiyu Kk | Cis系太陽電池の製造方法 |
-
2010
- 2010-06-17 JP JP2010138356A patent/JP5054157B2/ja active Active
-
2011
- 2011-06-16 WO PCT/JP2011/063797 patent/WO2011158900A1/ja active Application Filing
- 2011-06-16 KR KR1020137001343A patent/KR20130098281A/ko not_active Application Discontinuation
- 2011-06-16 US US13/702,458 patent/US9269841B2/en active Active
- 2011-06-16 CN CN201180029782.6A patent/CN103003955B/zh active Active
- 2011-06-16 DE DE112011102039T patent/DE112011102039T5/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
CN103003955B (zh) | 2016-02-24 |
US20130146137A1 (en) | 2013-06-13 |
JP2012004370A (ja) | 2012-01-05 |
WO2011158900A1 (ja) | 2011-12-22 |
CN103003955A (zh) | 2013-03-27 |
DE112011102039T5 (de) | 2013-05-02 |
KR20130098281A (ko) | 2013-09-04 |
US9269841B2 (en) | 2016-02-23 |
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