WO2015096422A1 - 彩膜基板及其制作方法、显示装置 - Google Patents

彩膜基板及其制作方法、显示装置 Download PDF

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Publication number
WO2015096422A1
WO2015096422A1 PCT/CN2014/080457 CN2014080457W WO2015096422A1 WO 2015096422 A1 WO2015096422 A1 WO 2015096422A1 CN 2014080457 W CN2014080457 W CN 2014080457W WO 2015096422 A1 WO2015096422 A1 WO 2015096422A1
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WO
WIPO (PCT)
Prior art keywords
color filter
black matrix
auxiliary electrode
auxiliary
spacer
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PCT/CN2014/080457
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English (en)
French (fr)
Inventor
王东方
袁广才
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京东方科技集团股份有限公司
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Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US14/409,118 priority Critical patent/US9453948B2/en
Publication of WO2015096422A1 publication Critical patent/WO2015096422A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present disclosure relates to a color film substrate, a method of fabricating the same, and a display device.
  • OLED Organic Light-Emitting Diode
  • AMOLED Active Matrix Organic Light Emitting Panel
  • WOLED white organic light emitting diode
  • CF color film substrate
  • the color film substrate (CF) known to the inventors generally includes: a substrate, black spaced apart on the substrate a matrix, a color filter layer composed of a photoresist disposed between the black matrices, disposed on the color filter layer Protective layer, auxiliary electrode disposed on the protective layer, spacer disposed on the auxiliary electrode, and A transparent electrode provided on the spacer.
  • the OLED light emitting unit of the WOLED is disposed on the array substrate, and the cathode of the OLED light emitting unit Electrically connecting to a transparent electrode on the color filter substrate to achieve alignment to the array through the transparent electrode on the color filter substrate
  • the cathode of the OLED lighting unit on the substrate provides a supply voltage.
  • the auxiliary electrode on the color film substrate is generally It is prepared from a metal with good conductivity to reduce the IR drop.
  • WOLED generally adopts a top emission structure, and the OLED light emitting unit on the array substrate emits light and light.
  • the line exits the color filter layer of the color filter substrate through the cathode.
  • the method of arranging the spacer on the auxiliary electrode is adopted, because of the spacer Large thickness, easy to cause the transparent electrode to break, resulting in a decrease in yield, and the auxiliary electrode is reflective Phenomenon, causing side leakage, low aperture ratio and other issues.
  • the present disclosure provides a color filter substrate that reduces lateral light leakage, increases aperture ratio, and improves yield. a manufacturing method and a display device including the color filter substrate.
  • the present disclosure provides a color filter substrate comprising: a transparent substrate; the transparent liner a color filter layer disposed on the bottom, the color filter layer includes at least a plurality of color filter units; a protective layer; a plurality of auxiliary electrodes disposed on the protective layer, the auxiliary electrode positions corresponding to phases a position of intersection of two adjacent color filter units; a black matrix disposed on the auxiliary electrode, the black matrix portion Substituting the auxiliary electrode; a spacer disposed on the black matrix; a bright electrode, the transparent electrode in an area where the auxiliary electrode is not covered by a black matrix, and the auxiliary The electrodes are electrically connected.
  • the black matrix has a thickness of 1 to 3 microns.
  • the spacer has a thickness of from 3 to 9 microns.
  • the material of the auxiliary electrode is metallic molybdenum.
  • the color filter layer includes at least a plurality of red color filter units, and a plurality of green color filters a unit layer and a plurality of blue color filter units, the position of the auxiliary electrode corresponding to two adjacent different colors The location where the color filter unit is handed over.
  • the present invention provides a method of fabricating a color filter substrate, comprising: step S1; Forming a color filter layer on the transparent substrate, the color filter layer including at least a plurality of color filter units; step S2 Forming a protective layer on the color filter layer; step S3, forming a plurality of auxiliary electrodes on the protective layer, the auxiliary The position of the auxiliary electrode corresponds to the position of the adjacent two color filter units; step S4, on the auxiliary electrode Forming a black matrix partially covering the auxiliary electrode; step S5, forming on the black matrix Forming a spacer; step S6, forming a transparent electrode on the spacer, the transparent electrode at the auxiliary electrode A region not covered by the black matrix is electrically connected to the auxiliary electrode.
  • the black matrix and spacer are formed in the same exposure development process.
  • the present disclosure provides a display device including the above-described color filter substrate.
  • the black matrix is disposed on the auxiliary electrode, which can effectively reduce the auxiliary electrode Lateral light leakage caused by light reflection, increasing aperture ratio, reducing spacer thickness and improving yield; In order to reduce the role of the mask, reduce costs.
  • FIG. 1 is a schematic view of a color film substrate according to an embodiment of the present disclosure
  • FIGS. 2a-2e are schematic structural views of steps in a method of fabricating a color filter substrate according to an embodiment of the present disclosure.
  • FIG. 3 is a schematic diagram of a process flow of a method for fabricating a color film substrate according to an embodiment of the present disclosure.
  • the present disclosure provides a color filter substrate including a transparent substrate 1 , the transparent liner
  • the bottom 1 may be made of a material such as glass; the transparent substrate 1 is provided with a color filter layer 2, and the color filter layer 2 is A plurality of red color filter units, a plurality of green color filter unit layers, and a plurality of blue color filter units are included.
  • the color filter layer 2 can also include color filter sheets of other colors. yuan.
  • the color filter layer may be composed of a photoresist.
  • a protective layer 3 is provided on the color filter layer 2, and the protective layer 3 planarizes the color filter layer 2 on the one hand. On the other hand, it can effectively prevent water vapor in the air from entering the membrane structure and improving the membrane layer. Stability of structural properties.
  • the protective layer 3 is provided with a plurality of auxiliary electrodes 4, and the position of the auxiliary electrodes 4 corresponds to two adjacent color filters Unit handover location.
  • the position of the auxiliary electrode 4 corresponds to two adjacent different colors.
  • the color filter unit is in a position where the auxiliary electrode 4 can be located in the red color filter unit and the green color filter unit. The position where the intersection is also possible, and the intersection between the green color filter unit and the blue color filter unit The position can also be located at the intersection between the red color filter unit and the blue color filter unit.
  • a black matrix 5 is disposed on the auxiliary electrode layer 4, and the black matrix 5 partially covers the auxiliary electrode 4, for example
  • the width of the black matrix 5 may be smaller than the width of the auxiliary electrode 4, and the black matrix 5 covers the auxiliary electrode 4. In the central region, the peripheral region of the auxiliary electrode 4 is not covered by the black matrix 5.
  • the black matrix 5 is provided with a spacer 6, and the spacer 6 is provided with an electrode 7 therethrough.
  • Transparent electrode 7 A region where the auxiliary electrode 4 is not covered by the black matrix 5 is electrically connected to the auxiliary electrode 4.
  • the manner in which the black matrix 5 is used to block the auxiliary electrode 4 can effectively reduce the opposite of the auxiliary electrode 4 to light.
  • the problem of lateral light leakage caused by the shot can reduce the width of the black matrix 5 and increase the aperture ratio.
  • Black moment The array 5 is disposed above the auxiliary electrode 4, which can effectively reduce the thickness of the spacer 6 and improve the yield.
  • the black matrix 5 and the spacers 6 can be formed in the same exposure development process. In order to reduce the color film base The manufacturing process complexity of the board and the improvement of the process efficiency can form a black moment in the same exposure developing process. The array 5 and the spacers 6 can reduce the use of the primary reticle and reduce the cost. In the same exposure The step of forming the black matrix 5 and the spacer 6 in the light developing process is specifically: spin coating on the auxiliary electrode 4 a layer of black matrix material, spin-coated a layer of spacer material on the black matrix material for one exposure and development In the process, the black matrix 5 and the spacers 6 are formed in the same exposure development process. Of course, the black matrix 5 The black matrix 5 and the spacers 6 may also be formed by a double exposure development process, respectively.
  • the thickness of the black matrix 5 is 1 to 3 micrometers, for example, the thickness of the black matrix 5 may be 1 micrometer or 2 micrometers. Meter or 3 microns.
  • the thickness of the spacer 6 is 3 to 9 micrometers.
  • the thickness of the spacer 6 may be 3 micrometers or 4 micrometers. Meters, 5 microns, 6 microns, 7 microns, 8 microns or 9 microns.
  • the auxiliary electrode 4 is made of a metal that does not chemically react with an alkaline liquid, so that it can be effectively avoided
  • the structural layer is prevented from being corroded by the alkaline liquid in the developing solution, and the film structure of the auxiliary electrode 4 is ensured. stability.
  • the auxiliary electrode is made of metallic molybdenum (Mo) or an alkaline resistant liquid. Other metals.
  • the present invention further provides a method for fabricating a color filter substrate, which specifically includes the following A step of.
  • Step S1 forming a color filter layer 2 on the transparent substrate 1, the color filter layer 2 including at least a plurality of red A color filter unit, a plurality of green color filter units, and a plurality of blue color filter units.
  • the color filter layer 2 is formed by a spin coating and an exposure developing process, and the thickness of the color filter layer 2 It is 1 to 3 microns. Refer to Figure 2a. For red filter unit, green filter unit and blue filter Yuan, it is necessary to spin-coat the corresponding color filter layers separately, and then expose and develop.
  • the color filter layer may be composed of a photoresist.
  • step S2 a protective layer 3 is formed on the color filter layer 2.
  • the protective layer 3 is formed by spin coating, and the protective layer 3 has a thickness of 2 to 5 ⁇ m.
  • the protective layer 3 By forming the protective layer 3 by spin coating, it is possible to have a flatness and prevent moisture in the air from entering it. The role of his structural layer. Refer to Figure 2b.
  • Step S3 forming a plurality of auxiliary electrodes 4 on the protective layer 3, the position of the auxiliary electrode 4 corresponding to the phase
  • the two adjacent color filter units are in the position of intersection, and the position of the auxiliary electrode 4 corresponds to the filter color of two adjacent different colors. Unit handover location.
  • a metal Mo having a thickness of 20 to 300 nm is prepared by sputtering and coated by coating.
  • the auxiliary electrode layer 4 is formed by a photoresist, exposure, development, etching, and lift-off process. Refer to Figure 2c.
  • Step S4 forming a black matrix 5 on the auxiliary electrode 4, the black matrix 5 partially covering the auxiliary power Extreme 4.
  • the black matrix 5 is formed by spin coating and exposure development, and the thickness of the black matrix 5 is 1-3. Micron. Refer to Figure 2d.
  • Step S5 forming a spacer 6 on the black matrix 5; continue to refer to FIG. 2d.
  • the spin coating and exposure development processes form a spacer 6, which has a thickness of 3 to 9 microns.
  • the step S4 and the step S5 can simultaneously form the black matrix 5 by the one-time exposure development process.
  • the pattern of the spacer 6. For example, a layer of black matrix material is spin-coated on the auxiliary electrode 4, in a black matrix Spin-coating a layer of spacer material, performing an exposure and development process, and forming in the exposure and development process The black matrix 5 and the spacer 6 are formed.
  • Step S6 forming a transparent electrode 7 on the spacer 6, and the transparent electrode 7 covers the black matrix 5 and the spacer Pad 6.
  • the transparent electrode 7 is in a region where the auxiliary electrode 4 is not covered by the black matrix 5 and the auxiliary electrode 4 Electrical connection.
  • a transparent electrode 7 having a thickness of 20 to 150 nm was prepared by sputtering, with reference to Fig. 2e.
  • the color film substrate in this embodiment can be applied to an AMOLED panel of a top emitting WOLED.
  • the method for fabricating a color film substrate provided by the embodiment of the invention, the black matrix is disposed on the auxiliary electrode Surface, can effectively reduce lateral light leakage, increase the aperture ratio, reduce the thickness of the spacer, improve the yield; It can reduce the role of the mask and reduce the cost.
  • the present invention also provides a display device comprising the above-described color filter substrate.
  • the display Can be: LCD panel, electronic paper, OLED panel, mobile phone, tablet, TV, display Any product or component that has a display function, such as a display, a notebook, a digital photo frame, and a navigator.

Abstract

一种彩膜基板及其制作方法及显示装置。该彩膜基板包括：透明衬底（1）；透明衬底（1）上设置的滤色层（2），滤色层（2）至少包括多个滤色单元；滤色层（2）上设有保护层（3）；保护层（3）上设置的多个辅助电极（4），辅助电极（4）的位置对应于相邻两个滤色单元交接的位置；辅助电极（4）上设置的黑矩阵（5），黑矩阵（5）部分覆盖辅助电极（4）；黑矩阵（5）上设置的隔垫物（6）；以及隔垫物（6）上设置的透明电极（7），透明电极（7）在辅助电极（4）没有被黑矩阵（5）覆盖的区域与辅助电极（4）电性连接。彩膜基板，将黑矩阵设置在辅助电极上面，可有效减少辅助电极对光反射造成的侧向漏光，提高开口率，减小隔垫物厚度，提高良率；同时可以实现减少掩膜板的作用，降低成本。

Description

彩膜基板及其制作方法、显示装置 技术领域
本公开涉及一种彩膜基板及其制作方法、显示装置。
背景技术
目前，由于有机发光二极管(Organic Light-Emitting Diode，简称OLED) 具有迁移率高、均匀性好等特点逐渐成为显示技术的主流，而作为下一代显 示技术的有源矩阵有机发光二极体面板(Active Matrix Organic Light Emitting  Diode，简称AMOLED)因其反应速度快、对比度高、视角更广等优势更受 到用户的追捧。
而在实际生产中，白色有机发光二极管(WOLED)结合彩膜基板(CF) 技术是AMOLED的一个重要的开发方向。由于有机发光材料利用率高、对 蒸镀发光片的掩膜版要求较低且采用顶发射的发光结构具有较高的开口率 等优点，WOLED备受关注。
发明人已知的彩膜基板(CF)通常包括：基板，基板上间隔设置的黑 矩阵，在黑矩阵之间设置的由光阻构成的彩色滤色层，在彩色滤色层上设置 的保护层，在保护层上设置的辅助电极，在辅助电极上设置的隔垫物，和在 隔垫物上设置的透明电极。
WOLED的OLED发光单元设置在阵列基板上，OLED发光单元的阴极 与彩膜基板上的透明电极电连接，以实现通过彩膜基板上的透明电极向阵列 基板上的OLED发光单元的阴极提供电源电压。彩膜基板上的辅助电极一般 由导电性好的金属制备，起降低透明电极压降(IR drop)的作用。
WOLED一般采用顶发射结构，阵列基板上的OLED发光单元发光，光 线透过阴极从彩膜基板的彩色滤色层出射。
在实际产品中发现采用在辅助电极上设置隔垫物的方式，由于隔垫物的 厚度较大，易造成透明电极断裂，导致良率降低，以及辅助电极发生反光的 现象，造成侧向漏光，开口率较低等问题。
发明内容
本公开提供一种减少侧向漏光，提高开口率，提高良率的彩膜基板及其 制作方法、以及包括该彩膜基板的显示装置。
一方面，本公开提供了一种彩膜基板，其包括：透明衬底；所述透明衬 底上设置的滤色层，所述滤色层至少包括多个滤色单元；所述光阻层上设置 的保护层；所述保护层上设置的多个辅助电极，所述辅助电极位置对应于相 邻两个滤色单元的交接位置；所述辅助电极上设置的黑矩阵，所述黑矩阵部 分覆盖所述辅助电极；所述黑矩阵上设置的隔垫物；所述隔垫物上设置的透 明电极，所述透明电极在所述辅助电极没有被黑矩阵覆盖的区域与所述辅助 电极电性连接。
在一个示例中，所述黑矩阵的厚度为1～3微米。
在一个示例中，所述隔垫物的厚度为3～9微米。
在一个示例中，所述辅助电极的材料为金属钼。
在一个示例中，所述滤色层至少包括多个红色滤色单元、多个绿色滤色 单元层和多个蓝色滤色单元，所述辅助电极的位置对应于相邻两个不同颜色 的滤色单元交接的位置。
另一方面，本发明提供一种彩膜基板的制作方法，其包括：步骤S1、 在透明衬底上形成滤色层，所述滤色层至少包括多个滤色单元；步骤S2、 在滤色层上形成保护层；步骤S3、在保护层上形成多个辅助电极，所述辅 助电极位置对应于相邻两个的滤色单元交接位置；步骤S4、在辅助电极上 形成黑矩阵，所述黑矩阵部分覆盖所述辅助电极；步骤S5、在黑矩阵上形 成隔垫物；步骤S6、在隔垫物上形成透明电极，透明电极在所述辅助电极 没有被黑矩阵覆盖的区域与所述辅助电极电性连接。
在一个示例中，所述黑矩阵和隔垫物在同一曝光显影工艺中形成。
另一方面，本公开提供一种显示装置，包括上述的彩膜基板。
根据本公开，将黑矩阵设置在辅助电极的上面，可有效减少辅助电极的 光反射造成的侧向漏光，提高开口率，降低隔垫物厚度，提高良率；同时可 以实现减少掩膜版的作用，降低成本。
附图说明
图1为本公开实施例的彩膜基板示意图；
图2a～2e为本公开实施例的彩膜基板制作方法中各步骤结构示意图；和
图3为本公开实施例的彩膜基板制作方法工艺流程示意图。
具体实施方式
下面将结合本公开实施例中的附图，对本公开实施例中的技术方案进行 清楚、完整地描述，显然，所描述的实施例仅仅是本公开一部分实施例，而 不是全部的实施例。基于本公开中的实施例，本领域普通技术人员在没有作 出创造性劳动前提下所获得的所有其他实施例，都属于本公开保护的范围。
除非另作定义，此处使用的技术术语或者科学术语应当为本公开所属领 域内具有一般技能的人士所理解的通常意义。本公开专利申请说明书以及权 利要求书中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数 量或者重要性，而只是用来区分不同的组成部分。同样，“一个”或者“一” 等类似词语也不表示数量限制，而是表示存在至少一个。“连接”或者“相 连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的 连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示 相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也相应 地改变。
如图1所示，本公开提供一种彩膜基板，其包括透明衬底1，该透明衬 底1可选用玻璃等材料；所述透明衬底1上设有滤色层2，所述滤色层2至 少包括多个红色滤色单元、多个绿色滤色单元层和多个蓝色滤色单元。为了 丰富显示色彩及提高亮度，该彩色滤色层2还可以包括其他颜色的滤色单 元。所述滤色层可由光阻构成。
滤色层2上设有保护层3，该保护层3对滤色层2一方面起到平坦化的 作用，另一方面还可以有效防止空气中的水汽进入到膜层结构中，提高膜层 结构性能的稳定性。
保护层3上设有多个辅助电极4，辅助电极4位置对应于相邻两个滤色 单元交接位置。在一个示例中，辅助电极4位置对应于相邻两个不同颜色的 滤色单元交接位置，例如辅助电极4可以位于红色滤色单元和绿色滤色单元 之间相交接的位置，还可以位于绿色滤色单元和蓝色滤色单元之间相交接的 位置，还可以位于红色滤色单元和蓝色滤色单元之间相交接的位置。
辅助电极层4上设有黑矩阵5，黑矩阵5部分覆盖所述辅助电极4，例 如黑矩阵5的宽度可以小于辅助电极4的宽度，黑矩阵5覆盖辅助电极4的 中央区域，辅助电极4的周边区域没有被黑矩阵5覆盖。
黑矩阵5上设有隔垫物6，隔垫物6上设有透有电极7。透明电极7在 辅助电极4没有被黑矩阵5覆盖的区域与所述辅助电极4电连接。
采用黑矩阵5来遮挡辅助电极4的方式可有效减少辅助电极4对光的反 射所导致的侧向漏光问题，可以降低黑矩阵5的宽度，提高开口率。将黑矩 阵5设置在辅助电极4之上，可以有效减少隔垫物6的厚度，提高良率。
黑矩阵5和隔垫物6可以在同一曝光显影工艺中形成。为了减少彩膜基 板的制作工艺复杂度，且提高工艺效率，可在同一曝光显影工艺中形成黑矩 阵5和隔垫物6，这样，可以减少一次掩模版的使用，降低成本。在同一曝 光显影工艺中形成黑矩阵5和隔垫物6的步骤具体为：在辅助电极4上旋涂 一层黑矩阵材料，在黑矩阵材料上旋涂一层隔垫物材料，进行一次曝光显影 工艺，在该同一曝光显影工艺中形成黑矩阵5和隔垫物6。当然，该黑矩阵 5也可以用两次曝光显影工艺分别形成黑矩阵5和隔垫物6。
黑矩阵5的厚度为1～3微米，例如黑矩阵5的厚度可以为1微米、2微 米或3微米。
隔垫物6的厚度为3～9微米，例如隔垫物6的厚度可以为3微米、4微 米、5微米、6微米、7微米、8微米或9微米。
辅助电极4由不与碱性液体发生化学反应的金属制成，这样，可有效避 免该结构层被显影液中的碱性液体腐蚀掉，确保该辅助电极4的膜层结构的 稳定性。在一个示例中，该辅助电极的材料为金属钼(Mo)，或抗碱性液体 的其他金属。
如图3所示，本发明还提供一种彩膜基板的制作方法，其具体包括以下 的步骤。
步骤S1、在透明衬底1上形成滤色层2，所述滤色层2至少包括多个红 色滤色单元、多个绿色滤色单元和多个蓝色滤色单元。
具体的，采用旋涂和曝光显影工艺形成滤色层2，所述滤色层2的厚度 为1～3微米。参考图2a。对于红色滤色单元、绿色滤色单元和蓝色滤色单 元，需要分别旋涂相应的滤色层，然后曝光显影。所述滤色层可由光阻构成。
步骤S2、在滤色层2上形成保护层3。
具体的，采用旋涂方式形成保护层3，所述保护层3的厚度为2～5微米。 通过采用旋涂方式制作保护层3，可具有平坦和防止空气中的水汽进入到其 他结构层的作用。参考图2b。
步骤S3、在保护层3上形成多个辅助电极4，辅助电极4位置对应于相 邻两个滤色单元交接位置，辅助电极4位置对应于相邻两个不同颜色的滤色 单元交接位置。
具体的，采用溅射方式制备厚度为20～300纳米的金属Mo，并通过涂 覆光刻胶、曝光、显影、刻蚀、剥离工艺形成辅助电极层4。参考图2c。
步骤S4、在辅助电极4上形成黑矩阵5，黑矩阵5部分覆盖所述辅助电 极4。
具体的，采用旋涂和曝光显影工艺形成黑矩阵5，黑矩阵5的厚度为1～3 微米。参考图2d。
步骤S5、在黑矩阵5上形成隔垫物6；继续参考图2d。具体的，采用 旋涂和曝光显影工艺形成隔垫物6，所述隔垫物6的厚度为3～9微米。
该步骤S4和步骤S5可以通过一次曝光显影工艺同时形成黑矩阵5和 隔垫物6的图形。例如，在辅助电极4上旋涂一层黑矩阵材料，在黑矩阵材 料上旋涂一层隔垫物材料，进行一次曝光显影工艺，在该曝光显影工艺中形 成黑矩阵5和隔垫物6。
步骤S6、在隔垫物6上形成透明电极7，透明电极7覆盖黑矩阵5和隔 垫物6。透明电极7在辅助电极4没有被黑矩阵5覆盖的区域与辅助电极4 电性连接。采用溅射方式制备厚度为20～150纳米的透明电极7，参考图2e。
本实施例中的彩膜基板可应用于顶发射WOLED的AMOLED面板。
本发明实施例提供的彩膜基板制作方法，将黑矩阵设置在辅助电极上 面，可有效减少侧向漏光，提高开口率，降低隔垫物厚度，提高良率；同时 可以实现减少掩膜版的作用，降低成本。
另外，本发明还提供一种显示装置，其包括上述的彩膜基板。该显示装 置可以为：液晶面板、电子纸、OLED面板、手机、平板电脑、电视机、显 示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普 通技术人员来说，在不脱离本发明技术原理的前提下，还可以做出若干改进 和变型，这些改进和变型也应视为本发明的保护范围。
本申请要求于2013年12月23日递交的中国专利申请第 201310717971.3号的优先权，在此全文引用上述中国专利申请公开的内容以 作为本申请的一部分。

Claims (15)

  1. 一种彩膜基板，包括：
    透明衬底；
    所述透明衬底上设置的滤色层，所述滤色层至少包括多个滤色单元；
    所述滤色层上设有保护层；
    所述保护层上设置的多个辅助电极，所述辅助电极的位置对应于相邻两 个滤色单元交接的位置；
    所述辅助电极上设置的黑矩阵，所述黑矩阵部分覆盖所述辅助电极；
    所述黑矩阵上设置的隔垫物；以及
    所述隔垫物上设置的透明电极，所述透明电极在所述辅助电极没有被黑 矩阵覆盖的区域与所述辅助电极电性连接。
  2. 如权利要求1所述的彩膜基板，其中所述滤色层由光阻构成。
  3. 如权利要求1或2所述的彩膜基板，其中所述黑矩阵的厚度为1～3 微米。
  4. 如权利要求1至3之一所述的彩膜基板，其中所述隔垫物的厚度为 3～9微米。
  5. 如权利要求1至4之一所述的彩膜基板，其中所述辅助电极的材料 为金属钼。
  6. 如权利要求1至5之一所述的彩膜基板，其中所述滤色层至少包括 多个红色滤色单元、多个绿色滤色单元层和多个蓝色滤色单元，所述辅助电 极的位置对应于相邻两个不同颜色的滤色单元交接的位置。
  7. 一种彩膜基板的制作方法，包括：
    步骤S1、在透明衬底上形成滤色层，所述滤色层至少包括多个滤色单 元；
    步骤S2、在滤色层上形成保护层；
    步骤S3、在保护层上形成多个辅助电极，所述辅助电极位置对应于相 邻两个滤色单元交接位置；
    步骤S4、在辅助电极上形成黑矩阵，所述黑矩阵部分覆盖所述辅助电 极
    步骤S5、在黑矩阵上形成隔垫物；以及
    步骤S6、在隔垫物上形成透明电极，所属透明电极在所述辅助电极没 有被黑矩阵覆盖的区域与所述辅助电极电性连接。
  8. 如权利要求7所述的彩膜基板的制作方法，其中所述黑矩阵和所述 隔垫物在同一曝光显影工艺中形成。
  9. 如权利要求7或8所述的彩膜基板的制作方法，其中所述黑矩阵的 厚度为1～3微米。
  10. 如权利要求7至9之一所述的彩膜基板的制作方法，其中所述隔垫 物的厚度为3～9微米。
  11. 如权利要求7至10之一所述的彩膜基板的制作方法，其中所述辅 助电极的材料为金属钼。
  12. 一种显示装置，包括彩膜基板，
    所述彩膜基板包括：
    透明衬底；
    所述透明衬底上设置的滤色层，所述滤色层至少包括多个滤色单元；
    所述滤色层上设有保护层；
    所述保护层上设置的多个辅助电极，所述辅助电极的位置对应于相邻两 个滤色单元交接的位置；
    所述辅助电极上设置的黑矩阵，所述黑矩阵部分覆盖所述辅助电极；
    所述黑矩阵上设置的隔垫物；以及
    所述隔垫物上设置的透明电极，所述透明电极在所述辅助电极没有被黑 矩阵覆盖的区域与所述辅助电极电性连接。
  13. 如权利要求12所述的显示装置，其中所述黑矩阵的厚度为1～3微 米，所述隔垫物的厚度为3～9微米。
  14. 如权利要求12或13所述的显示装置，其中所述辅助电极的材料为 金属钼。
  15. 如权利要求12至14之一所述的显示装置，其中所述滤色层至少包 括多个红色滤色单元、多个绿色滤色单元层和多个蓝色滤色单元，所述辅助 电极的位置对应于相邻两个不同颜色的滤色单元交接的位置。
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CN103700688A (zh) * 2013-12-23 2014-04-02 京东方科技集团股份有限公司 彩膜基板及其制作方法、显示装置

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