WO2015064256A1 - 炭化シリコン半導体装置及びその製造方法 - Google Patents
炭化シリコン半導体装置及びその製造方法 Download PDFInfo
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 186
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 184
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- 229910052799 carbon Inorganic materials 0.000 claims description 10
- 241000894007 species Species 0.000 claims description 10
- 244000000626 Daucus carota Species 0.000 claims description 9
- 235000002767 Daucus carota Nutrition 0.000 claims description 9
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
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- 229910021332 silicide Inorganic materials 0.000 description 12
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 12
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- -1 Ar is effective Chemical class 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
本発明の炭化シリコン半導体装置の製造工程では、SiCエピ層又はSiC下地基板に、n型ドーパント(N2,P等)、p型ドーパント(B,Al等)、4価元素(C,Si,Ge等)、希ガス元素(He,Ne,Ar等)のいずれかをイオン注入して、歪層を形成することができる。質量数の大きい元素を用いると、歪エネルギーを多く導入することができる。ただし、n型ドーパント又はp型ドーパントを使用する場合は、デバイスの電気特性に影響しないように、ドーズ量を制限する必要がある。歪層の深さ及び/又は歪の度合いは、加速電圧とドーズ量によって変えることができる。特に、加速電圧とドーズ量を変えてイオン注入を複数回行う、多段イオン注入法によれば、歪エネルギー分布も変えることができる。例えば、Alのイオン注入では、3段イオン注入(第1段:5×1014cm-2/350keV、第2段:3×1014cm-2/250keV、第3段:2×1014cm-2/100keV)によって、深さ約1μmの歪層を形成することができる。また、SiC-n型基板へのPの注入では、2段イオン注入(第1段:1.5×1013cm-2/70keV、第2段:1.5×1013cm-2/40keV)によって、深さ約0.2μmの歪層を形成することができる。SBDやMOSFET等の表面デバイスでは、歪層は1μm程度の深さで十分であり、更に多段イオン注入を多用して歪層を深くするとコストアップになるので好ましくない。一方、イオン注入時の基板温度は、特に制限されず、半導体プロセスで常用される500℃でもよいが、必ずしも高温である必要はなく、室温でもよい。
本発明の炭化シリコン半導体装置の製造工程では、SiCエピ層又はSiC下地基板をH、Ar、CF4等のプラズマに晒して歪層を形成することができる。プラズマ装置は、特に制限されず、誘導結合型プラズマ装置、容量結合型プラズマ装置、マイクロ波プラズマ装置等を用いることができる。例えば、容量結合型プラズマ装置によれば、3百ワット以上で60秒間のプラズマ処理によって、SiC半導体基板全面に歪を与えることができる。
本発明の炭化シリコン半導体装置の製造工程では、電子線をSiCエピ層又はSiC下地基板に照射して歪層を形成することができる。電子線は透過力が高いため、シリコン半導体プロセスと同様の加速電圧では数百μmの深さまで歪が与えられてしまう。このため、本目的に対しては、低加速電子銃、又はアルミニウム板等の減速材によって透過力の弱い電子線を得て、照射回数で歪層の深さやエネルギー量を制御することが好ましい。
本発明の炭化シリコン半導体装置の製造工程では、タンデム型バンデグラフトによって加速したプロトンをSiCエピ層又はSiC下地基板に照射して、歪層を形成することができる。例えばプロトンをドーズ量1×1013atoms/cm2、加速エネルギー0.5MeVで照射して、表面から3μm付近の深さにピークを持つ歪領域を形成することができる。
熱処理方法としては、高周波誘導加熱、レーザーアニール法を用いることができる。熱処理は、1600℃~2000℃で、30秒~180秒間行うことが好ましく、1700℃~2000℃で、30秒~150秒間行うことがより好ましい。1600℃未満では再結晶化が不完全で結晶欠陥が残留する可能性が高く、2000℃以上ではドーパントが昇華して電気特性が変わるので好ましくない。レーザーアニールを用いる場合、エピ層形成後に表面欠陥評価装置により作成された欠陥マップに沿って選択的レーザー照射することによって、図2(b)、(c)に示すように、欠陥部分だけを覆うように、SiC表面を選択的に再結晶化することが可能である。
図1に示す製造工程にしたがって、SiC-SBDを作製した。
図4に示す製造工程にしたがって、SiC-SBDを作製した。
この後、表面欠陥検査を実施し、通常4個/cm2、の欠陥レベルが、1.5個/cm2まで低減されていることを確認した。
2 SiCエピ層
3 p型領域
4 Niシリサイド膜
5 酸化膜
6 ショットキーバリア電極
7 AlSi電極
8 Ti/Ni/Au電極
10 貫通転位欠陥
11 再結晶層とエピ層の境界
13 再結晶層
Claims (11)
- 第一導電型の炭化シリコン半導体基板の一方の主面に積層される第一導電型の炭化シリコン半導体エピタキシャル層を有する炭化シリコン半導体装置において、
前記炭化シリコン半導体エピタキシャル層が積層される炭化シリコン半導体基板表面と炭化シリコン半導体エピタキシャル層の表面の少なくともいずれか一方の表面に再結晶層を備えることを特徴とする炭化シリコン半導体装置。 - 前記再結晶層が炭化シリコン半導体エピタキシャル層を貫通する結晶欠陥上を覆う位置に選択的に形成されていることを特徴とする請求項1記載の炭化シリコン半導体装置。
- 前記炭化シリコン半導体装置が炭化シリコンショットキーバリアダイオードまたは炭化シリコンMOSFETであることを特徴とする請求項1または2記載の炭化シリコン半導体装置。
- 第一導電型の炭化シリコン半導体基板の一方の主面に第一導電型の炭化シリコン半導体エピタキシャル層を形成する炭化シリコン半導体装置の製造方法において、前記炭化シリコン半導体エピタキシャル層が形成される炭化シリコン半導体基板の表面と前記炭化シリコン半導体エピタキシャル層の表面の少なくともいずれかの表面層に歪エネルギーを供給し、その後、前記歪エネルギーが供給された前記表面層を再結晶化させるための熱処理を加えて再結晶層を形成する工程を有することを特徴とする炭化シリコン半導体装置の製造方法。
- 前記歪エネルギーを与える手段が、イオン注入、プラズマ処理、電子線照射、プロトン照射のいずれかであることを特徴とする請求項4記載の炭化シリコン半導体装置の製造方法。
- 前記イオン注入に用いられるイオン種が、炭化シリコン半導体基板と同導電型のイオン種であることを特徴とする請求項5記載の炭化シリコン半導体装置の製造方法。
- 前記イオン注入に用いられるイオン種が、4価元素のC、Si、Geから選ばれるいずれかであることを特徴とする請求項5記載の炭化シリコン半導体装置の製造方法。
- 前記イオン注入に用いられるイオン種が、希ガス元素であることを特徴とする請求項5記載の炭化シリコン半導体装置の製造方法。
- 前記希ガス元素が、He、Ne、Arから選ばれるいずれかの元素であることを特徴とする請求項8記載の炭化シリコン半導体装置の製造方法
- 前記表面層を再結晶化させるための熱処理が、高周波誘導加熱法またはレーザー照射法を用いる加熱処理であることを特徴とする請求項4記載の炭化シリコン半導体装置の製造方法。
- キャロット欠陥を低減するための前記表面層の再結晶化のための前記加熱処理が、温度1600℃~2000℃で、30秒~180秒間の熱処理であることを特徴とする請求項10記載の炭化シリコン半導体装置の製造方法。
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