WO2015053371A1 - Conducteur transparent - Google Patents

Conducteur transparent Download PDF

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Publication number
WO2015053371A1
WO2015053371A1 PCT/JP2014/077094 JP2014077094W WO2015053371A1 WO 2015053371 A1 WO2015053371 A1 WO 2015053371A1 JP 2014077094 W JP2014077094 W JP 2014077094W WO 2015053371 A1 WO2015053371 A1 WO 2015053371A1
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Prior art keywords
refractive index
layer
index layer
transparent
high refractive
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PCT/JP2014/077094
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English (en)
Japanese (ja)
Inventor
一成 多田
仁一 粕谷
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コニカミノルタ株式会社
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Priority to JP2015541637A priority Critical patent/JPWO2015053371A1/ja
Publication of WO2015053371A1 publication Critical patent/WO2015053371A1/fr

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

Definitions

  • the present invention relates to a transparent conductor including a transparent metal film.
  • transparent conductive films have been used for various devices such as electrode materials for display devices such as liquid crystal displays, plasma displays, inorganic and organic EL (electroluminescence) displays, electrode materials for inorganic and organic EL elements, touch panel materials, and solar cell materials.
  • electrode materials for display devices such as liquid crystal displays, plasma displays, inorganic and organic EL (electroluminescence) displays, electrode materials for inorganic and organic EL elements, touch panel materials, and solar cell materials.
  • a wiring made of a transparent conductive film or the like is disposed on the image display surface of the display element. Therefore, the transparent conductive film is required to have high light transmittance.
  • a transparent conductive film made of ITO having high light transmittance is often used.
  • An object of this invention is to provide a transparent conductor with high moisture resistance and light transmittance.
  • 6 is a graph showing spectral characteristics of a transparent conductor produced in Example 4.
  • 10 is a graph showing spectral characteristics of a transparent conductor produced in Example 5.
  • 7 is a graph showing spectral characteristics of a transparent conductor produced in Example 6.
  • 7 is a graph showing spectral characteristics of a transparent conductor produced in Example 7.
  • 6 is a graph showing spectral characteristics of a transparent conductor produced in Example 8.
  • 6 is a graph showing spectral characteristics of a transparent conductor produced in Example 9.
  • 6 is a graph showing spectral characteristics of a transparent conductor produced in Example 10.
  • FIG. 10 is a graph showing spectral characteristics of a transparent conductor produced in Example 11.
  • 14 is a graph showing spectral characteristics of a transparent conductor produced in Example 12.
  • the prevention layer 5 may be included, but from the viewpoint of sufficiently increasing the light transmittance of the transparent conductor 100, the sulfide prevention layer 5 is provided between the zinc sulfide-containing layers 2 and 4 and the transparent metal film 3, respectively. Is preferably included. That is, it is preferable that the sulfidation preventing layer 5 is included between the first high refractive index layer 2 and the transparent metal film 3 and between the transparent metal film 3 and the second high refractive index layer 4.
  • the average transmittance is measured by making light incident from an angle inclined by 5 ° with respect to the normal line of the surface of the transparent substrate 1.
  • Average transmittance and average reflectance are measured with a spectrophotometer.
  • the thickness of the transparent substrate 1 is preferably 1 ⁇ m to 20 mm, more preferably 10 ⁇ m to 2 mm.
  • the thickness of the transparent substrate is 1 ⁇ m or more, the strength of the transparent substrate 1 is increased, and it is difficult to crack or tear the first high refractive index layer 2 during production.
  • the thickness of the transparent substrate 1 is 20 mm or less, the flexibility of the transparent conductor 100 is sufficient.
  • the thickness of the apparatus using the transparent conductor 100 can be reduced.
  • the apparatus using the transparent conductor 100 can also be reduced in weight.
  • the dielectric material or oxide semiconductor material contained in the first high refractive index layer 2 may be an insulating material or a conductive material.
  • the dielectric material or oxide semiconductor material can be a metal oxide.
  • metal oxides include TiO 2 , ITO (indium tin oxide), ZnO, Nb 2 O 5 , ZrO 2 , CeO 2 , Ta 2 O 5 , Ti 3 O 5 , Ti 4 O 7 , Ti 2 O 3 , TiO, SnO 2 , La 2 Ti 2 O 7 , IZO (indium oxide / zinc oxide), AZO (Al-doped ZnO), GZO (Ga-doped ZnO), ATO (Sb-doped SnO), ICO (indium cerium oxide), Bi 2 O 3 , Ga 2 O 3 , GeO 2 , WO 3 , HfO 2 , IGZO (indium gallium zinc oxide), a-GIO (amorphous oxide composed of gallium, indium and
  • the amount of ZnS is 0.1% by mass or more and 95% by mass with respect to the total number of moles of the material constituting the first high refractive index layer 2.
  • % Is preferably 50% by mass or more and 90% by mass or less, and more preferably 60% by mass or more and 85% by mass or less.
  • the ratio of ZnS is high, the sputtering rate is increased, and the deposition rate of the first high refractive index layer 2 is increased.
  • the amorphousness of the first high refractive index layer 2 is increased, and cracking of the first high refractive index layer 2 is suppressed.
  • the first high refractive index layer 2 can be a layer formed by a general vapor deposition method such as a vacuum deposition method, a sputtering method, an ion plating method, a plasma CVD method, a thermal CVD method or the like. From the viewpoint of increasing the refractive index (density) of the first high refractive index layer 2, the first high refractive index layer 2 is preferably a layer formed by an electron beam evaporation method or a sputtering method. In the case of the electron beam evaporation method, it is desirable to have assistance such as IAD (ion assist) in order to increase the film density.
  • IAD ion assist
  • First anti-sulfurization layer ZnS is contained in the first high-refractive index layer; that is, when the first high-refractive index layer 2 is a zinc sulfide-containing layer, as shown in FIG. It is preferable that the first sulfidation preventing layer 5 a is included between the high refractive index layer 2 and the transparent metal film 3.
  • the first sulfidation preventing layer 5a may be formed also in the insulating region b of the transparent conductor 100, but from the viewpoint of making it difficult to visually recognize the pattern composed of the conductive region a and the insulating region b, only the conductive region a is formed. Preferably it is formed.
  • metal oxides include TiO 2 , ITO, ZnO, Nb 2 O 5 , ZrO 2 , CeO 2 , Ta 2 O 5 , Ti 3 O 5 , Ti 4 O 7 , Ti 2 O 3 , TiO, SnO 2. , La 2 Ti 2 O 7 , IZO, AZO, GZO, ATO, ICO, Bi 2 O 3 , a-GIO, Ga 2 O 3 , GeO 2 , SiO 2 , Al 2 O 3 , HfO 2 , SiO, MgO, Y 2 O 3 , WO 3 , In 2 O 3 , IGZO and the like are included.
  • the thickness of the first sulfidation preventing layer 5a is preferably a thickness capable of protecting the surface of the first high refractive index layer 2 from an impact during the formation of the transparent metal film 3 described later.
  • ZnS that can be contained in the first high refractive index layer 2 has high affinity with the metal contained in the transparent metal film 3. Therefore, if the thickness of the first sulfidation preventing layer 5a is very thin and a part of the first high refractive index layer 2 is slightly exposed, a transparent metal film grows around the exposed part, and the transparent metal film 3 tends to be dense.
  • the first sulfidation preventing layer 5a is preferably relatively thin, preferably 0.1 nm to 10 nm, more preferably 0.5 nm to 5 nm, and further preferably 1 nm to 3 nm.
  • the thickness of the first sulfurization preventing layer 5a is measured with an ellipsometer.
  • the first antisulfurization layer 5a can be a layer formed by a general vapor deposition method such as a vacuum deposition method, a sputtering method, an ion plating method, a plasma CVD method, a thermal CVD method or the like.
  • a general vapor deposition method such as a vacuum deposition method, a sputtering method, an ion plating method, a plasma CVD method, a thermal CVD method or the like.
  • the transparent metal film 3 is a film for conducting electricity in the transparent conductor 100.
  • the transparent metal film 3 may be formed on the entire surface of the transparent substrate 1 as described above, or may be patterned into a desired shape.
  • the metal contained in the transparent metal film 3 is not particularly limited as long as it is a highly conductive metal, and may be, for example, silver, copper, gold, platinum group, titanium, chromium, or the like.
  • the transparent metal film 3 may contain only one kind of these metals or two or more kinds.
  • the transparent metal film is preferably made of silver or an alloy containing 90 at% or more of silver.
  • the metal combined with silver can be zinc, gold, copper, palladium, aluminum, manganese, bismuth, neodymium, molybdenum, and the like.
  • the sulfidation resistance of the transparent metal film is enhanced.
  • salt resistance (NaCl) resistance increases.
  • silver and copper are combined, the oxidation resistance increases.
  • the plasmon absorption rate of the transparent metal film 3 is preferably 10% or less (over the entire range) over a wavelength range of 400 nm to 800 nm, more preferably 7% or less, and further preferably 5% or less. If there is a region having a large plasmon absorption rate in a part of the wavelength of 400 nm to 800 nm, the transmitted light of the conductive region a of the transparent conductor 100 is likely to be colored.
  • the thickness of the transparent metal film 3 is 10 nm or less, preferably 3 to 9 nm, and more preferably 5 to 8 nm.
  • the transparent conductor 100 of the present invention since the transparent metal film 3 has a thickness of 10 nm or less, the metal reflection is hardly generated in the transparent metal film 3. Furthermore, when the thickness of the transparent metal film 3 is 10 nm or less, the optical admittance of the transparent conductor 100 is easily adjusted by the first high-refractive index layer 2 and the second high-refractive index layer 4, so Light reflection is easily suppressed.
  • the thickness of the transparent metal film 3 is measured with an ellipsometer.
  • the sputtering method since the material collides with the deposition target at high speed during film formation, a dense and smooth film is easily obtained; the light transmittance of the transparent metal film 3 is likely to increase. Moreover, when the transparent metal film 3 is a film formed by sputtering, the transparent metal film 3 is hardly corroded even in an environment of high temperature and low humidity.
  • the type of the sputtering method is not particularly limited, and may be an ion beam sputtering method, a magnetron sputtering method, a reactive sputtering method, a bipolar sputtering method, a bias sputtering method, a counter sputtering method, or the like.
  • the method for forming the transparent metal film 3 is not particularly limited, and may be a general vapor deposition method such as a vacuum deposition method, a sputtering method, an ion plating method, a plasma CVD method, a thermal CVD method, or the like.
  • the thickness of the second sulfidation preventing layer 5b is preferably a thickness capable of protecting the surface of the transparent metal film 3 from an impact during film formation of the second high refractive index layer 4 described later.
  • the metal contained in the transparent metal film 3 and the ZnS contained in the second high refractive index layer 4 have high affinity. Therefore, if the thickness of the second sulfidation preventing layer 5b is very thin and a part of the transparent metal film 3 is slightly exposed, the transparent metal film 3 or the second sulfidation preventing layer 5b and the second high refractive index layer 4 are exposed. Adhesiveness is likely to increase.
  • the specific thickness of the second antisulfurization layer 5b is preferably 0.1 nm to 10 nm, more preferably 0.5 nm to 5 nm, and further preferably 1 nm to 3 nm.
  • the thickness of the second sulfidation preventing layer 5b is measured with an ellipsometer.
  • the second sulfidation preventing layer 5b can be a layer formed by a general vapor deposition method such as a vacuum deposition method, a sputtering method, an ion plating method, a plasma CVD method, a thermal CVD method or the like.
  • the patterning method is not particularly limited.
  • the second sulfidation preventing layer 5b may be, for example, a layer formed in a pattern by a vapor deposition method by disposing a mask having a desired pattern on the film formation surface; It may be a layer patterned by a method.
  • the second high refractive index layer 4 adjusts the light transmittance (optical admittance) of the conductive region a of the transparent conductor 100, that is, the region where the transparent metal film 3 is formed. And is formed at least in the conduction region a of the transparent conductor 100.
  • the second high-refractive index layer 4 may be formed in the insulating region b of the transparent conductor 100, but is formed only in the conductive region a from the viewpoint of making it difficult to visually recognize the pattern composed of the conductive region a and the insulating region b. It is preferable that
  • the second high refractive index layer 4 includes a dielectric material or an oxide semiconductor material having a refractive index higher than that of the transparent substrate 1 described above.
  • the refractive index of light having a wavelength of 570 nm of the dielectric material or oxide semiconductor material is preferably 0.1 to 1.1 larger than the refractive index of light having a wavelength of 570 nm of the transparent substrate 1, and is preferably 0.4 to 1.0. Larger is more preferable.
  • the specific refractive index of light with a wavelength of 570 nm of the dielectric material or oxide semiconductor material contained in the second high refractive index layer 4 is preferably greater than 1.5, and is 1.7 to 2.5. More preferably, it is 1.8 to 2.5.
  • the dielectric material or oxide semiconductor material contained in the second high refractive index layer 4 may be an insulating material or a conductive material.
  • the dielectric material or oxide semiconductor material can be a metal oxide.
  • the metal oxide can be the same as the metal oxide contained in the first high refractive index layer 2.
  • the second high refractive index layer 4 may contain only one kind of the metal oxide or two or more kinds.
  • the amount of ZnS is 0.1% by mass or more and 95% by mass with respect to the total number of moles of components constituting the second high refractive index layer 4.
  • % Is preferably 50% by mass or more and 90% by mass or less, and more preferably 60% by mass or more and 85% by mass or less.
  • the ratio of ZnS is high, the sputtering rate is increased, and the deposition rate of the second high refractive index layer 4 is increased.
  • the amount of components other than ZnS increases, the amorphousness of the second high refractive index layer 4 increases, and cracking of the second high refractive index layer 4 is suppressed.
  • the thickness of the second high refractive index layer 4 is 15 nm or more, and usually 150 nm or less.
  • the thickness of the second high refractive index layer 4 is more preferably 15 to 150 nm, still more preferably 20 to 80 nm.
  • the optical admittance of the conductive region a of the transparent conductor 100 is sufficiently adjusted by the second high refractive index layer 4.
  • the thickness of the second high refractive index layer 4 is 150 nm or less, the light transmittance of the region including the second high refractive index layer 4 is unlikely to decrease.
  • the thickness of the second high refractive index layer 4 is measured with an ellipsometer.
  • the film formation method of the second high refractive index layer 4 is not particularly limited, and is formed by a general vapor deposition method such as a vacuum deposition method, a sputtering method, an ion plating method, a plasma CVD method, a thermal CVD method, or the like. Layer. From the viewpoint that the moisture permeability of the second high refractive index layer 4 is lowered, the second high refractive index layer 4 is particularly preferably a film formed by sputtering.
  • the patterning method is not particularly limited.
  • the second high refractive index layer 4 may be, for example, a layer formed in a pattern by a vapor deposition method by placing a mask having a desired pattern on the deposition surface.
  • the layer patterned by the well-known etching method may be sufficient.
  • the material of the transparent metal film 3 is deposited on, for example, the first high refractive index layer 2 by a general vapor deposition method
  • atoms attached to the first high refractive index layer 2 are initially deposited.
  • Migrate move
  • atoms gather together to form a lump (island structure).
  • a film grows clinging to this lump. Therefore, in the film at the initial stage of film formation, there is a gap between the lumps and it is not conductive.
  • a lump further grows from this state, a part of the lump is connected and barely conducted. However, since there is still a gap between the lumps, plasmon absorption occurs. As the film formation proceeds further, the lumps are completely connected and plasmon absorption is reduced.
  • the intrinsic reflection of the metal occurs, and the light transmittance of the film decreases.
  • the transparent metal film 3 grows using the base layer as a growth nucleus. That is, the material of the transparent metal film 3 is difficult to migrate, and the film grows without forming the island-like structure described above. As a result, it becomes easy to obtain a smooth transparent metal film 3 even if the thickness is small.
  • the base layer contains palladium, molybdenum, zinc, germanium, niobium, or indium; or an alloy of these metals with other metals, or an oxide or sulfide of these metals (for example, ZnS). Is preferred.
  • the underlayer may contain only one kind, or two or more kinds.
  • the amount of palladium, molybdenum, zinc, germanium, niobium or indium contained in the underlayer is preferably 20% by mass or more, more preferably 40% by mass or more, and further preferably 60% by mass or more.
  • the metal is contained in the base layer in an amount of 20% by mass or more, the affinity between the base layer and the transparent metal film 3 is increased, and the adhesion between the base layer and the transparent metal film 3 is likely to be increased. It is particularly preferable that the underlayer contains palladium or molybdenum.
  • the thickness of the underlayer is 3 nm or less, preferably 0.5 nm or less, and more preferably a monoatomic film.
  • the underlayer can also be a film in which metal atoms adhere to the transparent substrate 1 with a distance therebetween.
  • the adhesion amount of the underlayer is 3 nm or less, the underlayer hardly affects the light transmission property and optical admittance of the transparent conductor 100.
  • the presence or absence of the underlayer is confirmed by the ICP-MS method. Further, the thickness of the underlayer is calculated from the product of the film formation speed and the film formation time.
  • the underlayer can be a layer formed by sputtering or vapor deposition.
  • the sputtering method include an ion beam sputtering method, a magnetron sputtering method, a reactive sputtering method, a bipolar sputtering method, and a bias sputtering method.
  • the sputtering time during the underlayer film formation is appropriately selected according to the desired average thickness of the underlayer and the film formation speed.
  • the sputter deposition rate is preferably from 0.1 to 15 ⁇ / second, more preferably from 0.1 to 7 ⁇ / second.
  • the underlayer may be, for example, a layer formed in a pattern by a vapor deposition method by placing a mask having a desired pattern on the deposition surface; patterned by a known etching method It may be a layer.
  • the refractive index of light having a wavelength of 570 nm is more than the refractive index of light having a wavelength of 570 nm of the dielectric material or oxide semiconductor material included in the first high refractive index layer 2 and the second high refractive index layer 4.
  • a dielectric material or an oxide semiconductor material having a low rate is included.
  • the refractive index of the light of wavelength 570 nm of the dielectric material or oxide semiconductor material contained in the low refractive index layer is the light of wavelength 570 nm of the material contained in the first high refractive index layer 2 and the second high refractive index layer 4.
  • the refractive index is preferably 0.2 or more lower and more preferably 0.4 or more lower.
  • the specific refractive index of light having a wavelength of 570 nm of the dielectric material or oxide semiconductor material contained in the low refractive index layer is preferably less than 1.8, more preferably 1.30 to 1.6, Particularly preferred is 1.35 to 1.5.
  • the refractive index of the low refractive index layer is mainly adjusted by the refractive index of the material included in the low refractive index layer and the density of the material included in the low refractive index layer.
  • the dielectric material or oxide semiconductor material contained in the low refractive index layer is MgF 2 , SiO 2 , AlF 3 , CaF 2 , CeF 3 , CdF 3 , LaF 3 , LiF, NaF, Nad, NdF 3 , YF 3 , YbF 3. , Ga 2 O 3 , LaAlO 3 , Na 3 AlF 6 , Al 2 O 3 , MgO, and ThO 2 .
  • Dielectric material or an oxide semiconductor material is inter alia, is MgF 2, SiO 2, CaF 2 , CeF 3, LaF 3, LiF, NaF, NdF 3, Na 3 AlF 6, Al 2 O 3, MgO or ThO 2,
  • MgF 2 and SiO 2 are particularly preferable. Only one of these materials may be included in the low refractive index layer, or two or more of these materials may be included.
  • the thickness of the low refractive index layer is preferably 10 to 150 nm, more preferably 20 to 100 nm.
  • the thickness of the low refractive index layer is 10 nm or more, the optical admittance on the surface of the transparent conductor is easily finely adjusted.
  • the thickness of the low refractive index layer is 150 nm or less, the thickness of the transparent conductor is reduced.
  • the thickness of the low refractive index layer is measured with an ellipsometer.
  • the low refractive index layer may be a layer formed by a general vapor deposition method such as a vacuum deposition method, a sputtering method, an ion plating method, a plasma CVD method, a thermal CVD method or the like. From the viewpoint of easiness of film formation, the low refractive index layer is preferably a layer formed by electron beam evaporation or sputtering.
  • the low refractive index layer is a patterned layer
  • the patterning method is not particularly limited.
  • the low refractive index layer may be, for example, a layer formed in a pattern by a vapor deposition method by placing a mask having a desired pattern on the deposition surface; It may be a patterned layer.
  • the light transmittance (optical admittance) of the conductive region a of the transparent conductor is further adjusted on the low refractive index layer.
  • a third high refractive index layer may be included.
  • the third high refractive index layer may be formed only in the conductive region a of the transparent conductor 100, or may be formed in both the conductive region a and the insulating region b of the transparent conductor 100.
  • the third high refractive index layer preferably contains a dielectric material or an oxide semiconductor material having a refractive index higher than the refractive index of the transparent substrate 1 and the refractive index of the low refractive index layer.
  • the specific refractive index of light having a wavelength of 570 nm of the dielectric material or oxide semiconductor material contained in the third high refractive index layer is preferably larger than 1.5, more preferably 1.7 to 2.5. Preferably, it is 1.8 to 2.5.
  • the refractive index of the dielectric material or the oxide semiconductor material is larger than 1.5, the optical admittance of the conductive region a of the transparent conductor 100 is sufficiently adjusted by the third high refractive index layer.
  • the refractive index of the third high refractive index layer is adjusted by the refractive index of the material included in the third high refractive index layer and the density of the material included in the third high refractive index layer.
  • the film formation method of the third high refractive index layer is not particularly limited, and may be a layer formed by the same method as the first high refractive index layer 2 and the second high refractive index layer 4.
  • the reflectance R of the surface of the conductive area a of the transparent conductor is determined by the optical admittance Y env of the medium on which light is incident and the transparent conductor determined from the equivalent admittance Y E of the surface of the conductive region a of the body.
  • the medium on which the light is incident refers to a member or environment through which light incident on the transparent conductor passes immediately before the incident; a member or environment made of an organic resin.
  • the relationship between the optical admittance Y env of the medium on which light is incident and the equivalent admittance Y E of the surface of the transparent conductor is expressed by the following equation. Based on the above formula, the closer the value
  • the optical admittance Y env of the medium is obtained from the ratio (H / E) of the electric field strength and the magnetic field strength, and is usually the same as the refractive index n env of the medium.
  • the equivalent admittance Y E of the surface of the conductive region a of the transparent conductor is determined from the optical admittance Y of the layers constituting the conductive region a. For example, when the transparent conductor (conductive region a) is composed of one is equivalent admittance Y E of the transparent conductor is equal to the of the layer optical admittance Y (refractive index).
  • the optical admittance Y x (E x H x ) of the laminate from the first layer to the x-th layer is from the first layer to (x ⁇ 1) It is represented by the product of the optical admittance Y x-1 (E x-1 H x-1 ) of the laminate up to the layer and a specific matrix; specifically, the following formula (1) or formula (2) Is required.
  • the optical admittance Y x (E x H x ) of the laminate from the transparent substrate to the outermost layer becomes the equivalent admittance Y E of the transparent conductor.
  • FIG. 4A shows a transparent conductor (transparent substrate / first high refractive index layer (ZnS—SiO 2 ) / first antisulfuration layer (ITO) / transparent metal film (Ag) / second high refraction of Example 1 described later. shows the admittance locus of wavelength 570nm conductive region a rate layer (ZnS-SiO 2) a transparent conductor comprising a).
  • the horizontal axis of the graph is the real part when the optical admittance Y of the region is represented by x + iy; that is, x in the equation, and the vertical axis is the imaginary part of the optical admittance; that is, y in the equation.
  • the first sulfidation prevention layer (ITO) is sufficiently thin, so that its optical admittance can be ignored.
  • the final coordinates of the admittance locus is equivalent admittance Y E conductive region a.
  • the distance between the coordinate (x E , y E ) of the equivalent admittance Y E and the admittance coordinate Y env (n env , 0) (not shown) of the medium on which the light is incident is determined by the conduction region a of the transparent conductor. It is proportional to the surface reflectance R.
  • it is preferable that one or both of x 1 and x 2 is 1.6 or more. either one of x 1 and x 2 are, it tends enhanced light transmission of the transparent conductor If it is 1.6 or more. The reason will be described below.
  • x 1 and x 2 are preferably 1.6 or more, more preferably 1.8 or more, and further preferably 2.0 or more. Any one of x 1 and x 2 may be 1.6 or more, but x 1 is particularly preferably 1.6 or more.
  • the x 1 and x 2 is preferably 7.0 or less, more preferably 5.5 or less.
  • x 1 is the refractive index of the first high refractive index layer and is adjusted in such a thickness of the first high refractive index layer.
  • x 2 is the refractive index of the values and the transparent metal film x 1, is adjusted by the thickness or the like of the first transparent metal film.
  • ) of the difference between x 1 and x 2 is preferably 1.5 or less, more preferably 1.0 or less, and even more preferably 0.8 or less. is there.
  • the aforementioned y 1 is sufficiently large.
  • the optical admittance of the transparent metal film has a large imaginary part value, and the admittance locus greatly moves in the vertical axis (imaginary part) direction. Therefore, if y 1 is sufficiently large, the absolute value of the imaginary part of the admittance coordinates is likely to be within an appropriate range, and the admittance locus is likely to be line symmetric.
  • y 1 is preferably 0.2 or more, more preferably 0.3 to 1.5, and still more preferably 0.3 to 1.0.
  • y 2 described above is preferably ⁇ 0.3 to ⁇ 2.0, and more preferably ⁇ 0.6 to ⁇ 1.5.
  • Distance from equivalent admittance coordinates (n env , 0) ((x E ⁇ n env ) 2 + (y E ) 2 ) 0.5 is preferably less than 0.5, more preferably 0.3 or less It is. When the distance is less than 0.5, the reflectance Ra of the surface of the conduction region a is sufficiently small, and the light transmittance of the conduction region a is increased.
  • an equivalent admittance coordinate (x E , y E ) of light with a wavelength of 570 nm in the conduction region a and an equivalent admittance coordinate (( x ( b , y b )), ((x E ⁇ x b ) 2 + (y E ⁇ y b ) 2 ) 0.5 is preferably less than 0.5, more preferably 0 .3 or less.
  • the coordinates of the equivalent admittance Y E conductive region a, the coordinate of the equivalent admittance Y b of the insulating region b is sufficiently close, so these patterns are hardly visually recognized.
  • the average transmittance of light having a wavelength of 450 to 800 nm of the transparent conductor of the present invention is preferably 83% or more, more preferably 85% in both the conduction region a and the insulation region b. Or more, more preferably 88% or more.
  • the transparent conductor can be applied to applications requiring high transparency to visible light.
  • the average transmittance of light having a wavelength of 400 to 1000 nm of the transparent conductor is preferably 80% or more in both the conduction region a and the insulation region b, more preferably 83% or more, and still more preferably 85%. That's it.
  • the transparent conductor is also applied to applications requiring transparency with respect to light in a wide wavelength range, such as a transparent conductive film for solar cells. can do.
  • the average reflectance of light with a wavelength of 500 nm to 700 nm of the transparent conductor is preferably 20% or less, more preferably 15% or less, and even more preferably in both the conduction region a and the insulation region b. Is 10% or less.
  • the reflectance of the conductive region a and the insulating region b are approximated.
  • the difference ⁇ R between the luminous reflectance of the conduction region a and the luminous reflectance of the insulating region b is preferably 5% or less, more preferably 3% or less, and still more preferably It is 1% or less, particularly preferably 0.3% or less.
  • the luminous reflectances of the conductive region a and the insulating region b are each preferably 5% or less, more preferably 3% or less, and further preferably 1% or less.
  • the luminous reflectance is a Y value measured with a spectrophotometer (U4100; manufactured by Hitachi High-Technologies Corporation).
  • the a * value and the b * value in the L * a * b * color system are preferably within ⁇ 30 in any region. More preferably, it is within ⁇ 5, more preferably within ⁇ 3.0, and particularly preferably within ⁇ 2.0. If the a * value and the b * value in the L * a * b * color system are within ⁇ 30, both the conduction region a and the insulation region b are observed as colorless and transparent. The a * value and b * value in the L * a * b * color system are measured with a spectrophotometer.
  • the surface electric resistance of the conductive region a of the transparent conductor is preferably 50 ⁇ / ⁇ or less, more preferably 30 ⁇ / ⁇ or less.
  • a transparent conductor having a surface electric resistance value of 50 ⁇ / ⁇ or less in the conduction region can be applied to a transparent conductive panel for a capacitive touch panel.
  • the surface electric resistance value of the conduction region a is adjusted by the thickness of the transparent metal film.
  • the surface electrical resistance value of the conduction region a is measured in accordance with, for example, JIS K7194, ASTM D257, or the like. It is also measured by a commercially available surface electrical resistivity meter.
  • transparent conductors include various types of displays such as liquid crystal, plasma, organic electroluminescence, field emission, touch panels, mobile phones, electronic paper, various solar cells, various electroluminescent dimming elements, etc. It can be preferably used for a substrate of an optoelectronic device.
  • the surface of the transparent conductor (for example, the surface opposite to the transparent substrate) may be bonded to another member via an adhesive layer or the like.
  • the equivalent admittance coordinates of the surface of the transparent conductor and the admittance coordinates of the adhesive layer approximate each other. Thereby, reflection at the interface between the transparent conductor and the adhesive layer is suppressed.
  • the admittance coordinates of the surface of the transparent conductor and the admittance coordinates of the air approximate each other. Thereby, reflection of light at the interface between the transparent conductor and air is suppressed.
  • Example 1 On a film made of cycloolefin polymer, the following method is used to form a first high refractive index layer (ZnS-SiO 2 ) / first antisulfurization layer (ITO) / transparent metal film (Ag) / second high refractive index layer ( ITO) was sequentially laminated by the following method. Thereafter, the laminate was patterned by the following method. The thickness of each layer is described in J. A. Woollam Co. Inc. The measurement was made with a VB-250 VASE ellipsometer manufactured by the manufacturer. However, the average thickness of the underlayer was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
  • FIG. 4A shows the admittance locus of the obtained transparent conductor at a wavelength of 570 nm
  • FIG. 4B shows the spectral characteristics of the conduction region of the transparent conductor.
  • a resist layer is formed into a pattern on the obtained laminate, and the first high-refractive index layer, the first antisulfurization layer, the transparent metal film, and the second high-refractive index layer are formed as shown in FIG.
  • the pattern was formed with an ITO etching solution (manufactured by Hayashi Junyaku Co., Ltd.) in a shape including a conductive region a and a line-shaped insulating region b separating the conductive region a. Only the transparent substrate was included in the insulating region. The width of the line-shaped insulating region b was 16 ⁇ m.
  • IGZO First antisulfurization layer and second high refractive index layer (IGZO)) Using Anelva L-430S-FHS, IGZO was RF sputtered at Ar 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 2.2 L / s. The target-substrate distance was 86 mm.
  • the refractive index of light with a wavelength of 570 nm of IGZO was 2.09, and the refractive index of light with a wavelength of 570 nm of the first antisulfurization layer and the second high refractive index layer was also 2.09.
  • Example 3 On a transparent substrate made of Toyobo PET (Cosmo Shine A4300 thickness 50 ⁇ m), a first high refractive index layer (ZnS—SiO 2 ) / first antisulfuration layer (Ga 2 O 3 ) / transparent metal film (Ag—Nd—) Bi—Au) / second high refractive index layer (Ga 2 O 3 ) was laminated in this order.
  • the first high refractive index layer (ZnS—SiO 2 ) was formed in the same manner as in Example 1.
  • the first sulfurization prevention layer and the second high refractive index layer (Ga 2 O 3 ) were formed by the following method.
  • the second high refractive index layer (ITO) was formed in the same manner as the second high refractive index layer of Example 1.
  • the obtained laminate was patterned in the same manner as in Example 1.
  • FIG. 7 shows the spectral characteristics of the conductive region of the obtained transparent conductor.
  • ZnS First high refractive index layer
  • a magnetron sputtering apparatus manufactured by Osaka Vacuum Co.
  • ZnS was RF-sputtered at Ar 20 sccm, O 2 0 sccm, sputtering pressure 0.1 Pa, room temperature, target-side power 150 W, and deposition rate 3.8 ⁇ / s.
  • the target-substrate distance was 90 mm.
  • the refractive index of light with a wavelength of 570 nm of ZnS was 2.37, and the refractive index of light with a wavelength of 570 nm of the first high refractive index layer was also 2.37.
  • Nb 2 O 5 (First sulfurization prevention layer and second high refractive index layer (Nb 2 O 5 )) Nb 2 O 5 was DC sputtered at 20 sccm Ar, 1 sccm O 2 , sputtering pressure 0.5 Pa, room temperature, target side power 150 W, deposition rate 1.2 ⁇ / s using L-430S-FHS manufactured by Anerva.
  • the target-substrate distance was 86 mm.
  • the refractive index of light with a wavelength of 570 nm of Nb 2 O 5 was 2.31, and the refractive indexes of light with a wavelength of 570 nm of the first antisulfurization layer and the second high refractive index layer were also 2.31.
  • Example 6 A first high refractive index layer (ZnS) / first antisulfurization layer (SnO 2 ) / transparent metal film (Ag) / second high refractive index layer (SnO 2 ) are laminated in this order on a transparent substrate made of a cycloolefin polymer. did.
  • the first high refractive index layer (ZnS) was formed in the same manner as the first high refractive index layer of Example 4.
  • the transparent metal film (Ag) was formed in the same manner as in Example 1.
  • the first sulfurization prevention layer and the second high refractive index layer (SnO 2 ) were formed by the following method.
  • the obtained laminate was patterned in the same manner as in Example 1. The spectral characteristics of the conduction region of the obtained transparent conductor are shown in FIG.
  • Example 7 On a transparent substrate made of Toyobo PET (Cosmo Shine A4300 thickness 50 ⁇ m), a first high refractive index layer (ZnS) / first antisulfuration layer (ZnO) / transparent metal film (Ag) / second high refractive index layer ( TiO 2 ) was laminated in order.
  • the first high refractive index layer (ZnS) and the first antisulfurization layer (ZnO) were formed in the same manner as the first high refractive index layer and the first antisulfurization layer of Example 4, respectively.
  • the transparent metal film (Ag) was formed in the same manner as in Example 1.
  • the second high refractive index layer (TiO 2 ) was formed by the following method.
  • the obtained laminate was patterned in the same manner as in Example 1. The spectral characteristics of the conduction region of the obtained transparent conductor are shown in FIG.
  • the first sulfidation prevention layer and the second sulfidation prevention layer (ZnO) were formed in the same manner as the first sulfidation prevention layer of Example 4.
  • the underlayer (Pd) was formed in the same manner as the underlayer of Example 5.
  • a transparent metal film (Ag—Nd—Bi—Au alloy) was formed in the same manner as in Example 3.
  • the obtained laminate was patterned in the same manner as in Example 1. The spectral characteristics of the conduction region of the obtained transparent conductor are shown in FIG.
  • Example 10 On a transparent substrate made of Toyobo PET (Cosmo Shine A4300 thickness 50 ⁇ m), first high refractive index layer (ZnS—SiO 2 ) / first antisulfuration layer (IGZO) / transparent metal film (Ag) / second antisulfurization Layer (IGZO) / second high refractive index layer (ZnS—SiO 2 ) were laminated in this order.
  • the first high refractive index layer, the second high refractive index layer (ZnS—SiO 2 ), and the transparent metal film (Ag) were formed in the same manner as the first high refractive index layer and the transparent metal film in Example 1, respectively.
  • the first sulfidation prevention layer and the second sulfidation prevention layer were formed in the same manner as the first sulfidation prevention layer of Example 2.
  • the obtained laminate was patterned in the same manner as in Example 1. The spectral characteristics of the conduction region of the obtained transparent conductor are shown in FIG.
  • Example 11 On a transparent substrate made of glass, a first high refractive index layer (ZnS) / first antisulfurization layer (ZnO) / transparent metal film (Ag) / second antisulfuration layer (IZO) / second high refractive index layer ( ZnS) were stacked in order.
  • the first high refractive index layer and the second high refractive index layer (ZnS) were formed in the same manner as the first high refractive index layer of Example 4.
  • the first antisulfurization layer (ZnO) was formed in the same manner as the first antisulfurization layer of Example 4.
  • the transparent metal film (Ag) was formed in the same manner as in Example 1.
  • the second antisulfurization layer (IZO) was formed by the following method.
  • the obtained laminate was patterned in the same manner as in Example 1.
  • FIG. 14 shows the spectral characteristics of the conductive region of the obtained transparent conductor.
  • IZO Tin anti-sulfurization layer
  • the first high refractive index layer, the second high refractive index layer, the third high refractive index layer (ZnS), the first antisulfurization layer, and the second antisulfation layer (ZnO) were formed in the same manner.
  • the transparent metal film (Ag) was formed in the same manner as in Example 1.
  • the low refractive index layer (SiO 2 ) was formed by the following method.
  • the obtained laminate was patterned in the same manner as in Example 1. The spectral characteristics of the conduction region of the obtained transparent conductor are shown in FIG.
  • SiO 2 Low refractive index layer (SiO 2 )
  • SiO 2 RF-sputtered at Ar 20 sccm, O 2 0 sccm, sputtering pressure 0.1 Pa, room temperature, target-side power 300 W, and deposition rate 1.6 ⁇ / s.
  • the target-substrate distance was 90 mm.
  • the refractive index of light with a wavelength of 570 nm of SiO 2 was 1.46, and the refractive index of light with a wavelength of 570 nm of the low refractive index layer was also 1.46.
  • Example 13 On a transparent substrate made of glass, a first high refractive index layer (ZnS—SiO 2 ) / transparent metal film (APC-TR alloy) / second antisulfurization layer (ITO) / second high refractive index layer (ZnS—SiO 2) 2 ) were laminated in order.
  • the first high refractive index layer and the second high refractive index layer (ZnS—SiO 2 ) were formed in the same manner as the first high refractive index layer of Example 1.
  • a transparent metal film (APC-TR alloy) was formed in the same manner as in Example 4.
  • the second antisulfation layer (ITO) was formed in the same manner as the first antisulfation layer of Example 1.
  • the obtained laminate was patterned in the same manner as in Example 1.
  • FIG. 16 shows the spectral characteristics of the conductive region of the obtained transparent conductor.
  • Example 14 On a Konica Minolta TAC film (transparent substrate), a first high refractive index layer (ZnS-SiO 2 ) / transparent metal film (APC alloy) / second antisulfuration layer (ZnO) / second high refractive index layer (ZnS -SiO 2 ) were sequentially laminated.
  • the first high refractive index layer and the second high refractive index layer (ZnS—SiO 2 ) were formed in the same manner as in Example 1.
  • the transparent metal film (APC alloy) was formed by the same method as in Example 1 except that the target at the time of film formation was an Ag alloy (manufactured by Furuya Metal Co., Ltd.).
  • the second antisulfurization layer (ZnO) was formed in the same manner as the first antisulfurization layer of Example 4.
  • the obtained laminate was patterned in the same manner as in Example 1.
  • FIG. 17 shows the spectral characteristics of the conductive region of the obtained transparent conductor.
  • Example 15 On a transparent substrate made of glass, a first high refractive index layer (ZnS) / transparent metal film (Ag) / second antisulfurization layer (GZO) / second high refractive index layer (ZnS) were laminated in this order.
  • the first high refractive index layer and the second high refractive index layer (ZnS) were formed in the same manner as the first high refractive index layer of Example 4.
  • the transparent metal film (Ag) was formed in the same manner as in Example 1.
  • the second antisulfurization layer (GZO) was formed by the following method.
  • the obtained laminate was patterned in the same manner as in Example 1.
  • FIG. 18 shows the spectral characteristics of the conductive region of the obtained transparent conductor.
  • GZO Spin anti-sulfurization layer
  • a magnetron sputtering apparatus manufactured by Osaka Vacuum Co.
  • GZO was RF-sputtered at Ar 20 sccm, O 2 0 sccm, sputtering pressure 0.1 Pa, room temperature, target-side power 150 W, and deposition rate 1.1 ⁇ / s.
  • the target-substrate distance was 90 mm.
  • the refractive index of light with a wavelength of 570 nm of GZO was 2.04, and the refractive index of light with a wavelength of 570 nm of the second high refractive index layer was also 2.04.
  • ZrO 2 First high refractive index layer (ZrO 2 )) Using Arnelva L-430S-FHS, ZrO 2 was RF sputtered at Ar 20 sccm, O 2 1 sccm, sputtering pressure 0.5 Pa, room temperature, target-side power 150 W, and deposition rate 0.5 ⁇ / s. The target-substrate distance was 86 mm. The refractive index of light with a wavelength of 570 nm of ZrO 2 was 2.05.
  • the second antisulfurization layer (ZnO) and the second high refractive index layer (ZnS) were formed in the same manner as the first antisulfurization layer and the first high refractive index layer of Example 4, respectively.
  • the obtained laminate was patterned in the same manner as in Example 1.
  • FIG. 21 shows the spectral characteristics of the conductive region of the obtained transparent conductor.
  • Example 19 On a transparent substrate made of PET / CHC (PET film with clear hard coat layer), first high refractive index layer (ZnS) / first antisulfurization layer (GZO) / transparent metal film (Ag) / second high refractive index Layer (IGZO) / third high refractive index layer (ITO) were laminated in order.
  • the first high refractive index layer (ZnS) was formed in the same manner as the first high refractive index layer of Example 4.
  • the first antisulfurization layer (GZO) was formed in the same manner as the first antisulfurization layer of Example 1 except that the target was GZO.
  • the transparent metal film (Ag) was formed in the same manner as the transparent metal film of Example 1.
  • the second high refractive index layer (IGZO) was formed in the same manner as the second high refractive index layer of Example 2.
  • the third high refractive index layer (ITO) was formed in the same manner as the second high refractive index layer of Example 1.
  • the obtained laminate was patterned in the same manner as in Example 1.
  • the spectral characteristics of the conduction region of the obtained transparent conductor are shown in FIG.
  • the surface electrical resistance of the conductive region of the transparent conductor was measured and found to be 5 ⁇ / ⁇ .
  • the surface electrical resistance was measured with a resistivity meter “Loresta EP MCP-T360” manufactured by Mitsubishi Chemical Analytech Co., Ltd. in accordance with JIS K7194, ASTM D257 and the like.
  • Transparent metal film (Ag) On the first high refractive index layer, a silver film having a thickness of 12 nm was formed by resistance heating using a BMC-800T vapor deposition machine manufactured by SYNCHRON. The input current value at this time was 210 A, and the film formation rate was 5 ⁇ / s.
  • a first high refractive index layer (ZnS) / transparent metal film (Ag) / second high refractive index layer (ZnS) were laminated in this order.
  • the first high refractive index layer and the second high refractive index layer were formed by the same method as the first high refractive index layer of Example 4.
  • the transparent metal film was formed in the same manner as in Comparative Example 1.
  • a first high refractive index layer (Nb 2 O 5 ) / transparent metal film (Ag) / second high refractive index layer (IZO) were laminated in this order on a transparent substrate made of Toyobo PET (Cosmo Shine A4300 thickness 50 ⁇ m). .
  • Each layer was formed by the following method. The spectral characteristics of the conduction region of the obtained transparent conductor are shown in FIG.
  • IZO Spin high refractive index layer
  • Anelva L-430S-FHS Using an Anelva L-430S-FHS, IZO was RF sputtered at Ar 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 2.2 L / s.
  • the target-substrate distance was 86 mm.
  • the refractive index of light with a wavelength of 570 nm of IZO is 2.05, but the refractive index of light with a wavelength of 570 nm of the second high refractive index layer is 1.98.
  • the target was formed in the same manner as the second high refractive index layer of Comparative Example 3 except that the target was made of a material (ICO) containing 10 atomic% of cerium in indium.
  • the refractive index of light with a wavelength of 570 nm of ICO was 2.2, and the refractive indexes of light with a wavelength of 570 nm of the first high refractive index layer and the second high refractive index layer were also 2.2.
  • Fluorine material layer (KP801M) Fluorine-based material (manufactured by Shin-Etsu Chemical Co., Ltd .: KP801M) was vapor-deposited by resistance heating with a Gener 1300 manufactured by Optorun at 190 mA and a film formation rate of 10 kg / s.
  • a first high refractive index layer (ITO) / transparent metal film (APC alloy) / second high refractive index layer (ITO) were laminated in this order on a transparent substrate made of Toyobo PET (Cosmo Shine A4300, thickness 50 ⁇ m).
  • the first high refractive index layer and the second high refractive index layer (ITO) were formed in the same manner as the first high refractive index layer of Example 17, respectively.
  • the transparent metal film was formed by the following method.
  • measurement light for example, light having a wavelength of 450 nm to 800 nm
  • the light transmittance and reflectance were measured at U4100.
  • the absorptance was calculated from a formula of 100 ⁇ (transmittance + reflectance).
  • the value obtained by subtracting the reflection at the interface between the alkali-free glass substrate and the atmosphere (4%) and the reflection at the interface between the transparent substrate and the atmosphere (4%) from the measured value of the reflectance The reflectance of the transparent conductor was used. Also, the transmittance was added to the measured value of transmittance by 8% in consideration of the reflection at the interface between the alkali-free glass substrate and the atmosphere and the reflection of the transparent conductor at the interface between the transparent substrate and the atmosphere. The value was the transmittance of the transparent conductor.
  • the transparent conductors of Examples 6, 7, 12, 15, Comparative Example 1 and Comparative Example 3 were used in contact with air. Therefore, measurement light (for example, light having a wavelength of 450 nm to 800 nm) is incident on the conductive region without bonding an alkali-free glass substrate on the transparent conductor, and light is emitted by Hitachi, Ltd .: spectrophotometer U4100. The transmittance and reflectance were measured. The absorptance was calculated from a formula of 100 ⁇ (transmittance + reflectance). The measurement light was incident from the second high refractive index layer side.
  • measurement light for example, light having a wavelength of 450 nm to 800 nm
  • the transmittance and reflectance were measured.
  • the absorptance was calculated from a formula of 100 ⁇ (transmittance + reflectance).
  • the measurement light was incident from the second high refractive index layer side.
  • the value obtained by subtracting the reflection (4%) at the interface between the transparent substrate of the transparent conductor and the atmosphere from the measured value of the reflectance was taken as the reflectance of the transparent conductor.
  • the transmittance of the transparent conductor was determined by adding 4% to the measured value of the transmittance in consideration of the reflection of the transparent conductor at the interface between the transparent substrate and the atmosphere.
  • ⁇ R in Tables 1 and 2 represents the absolute value of the difference between the luminous efficiency of the conductive area and the luminous efficiency of the insulating area.
  • optical admittance The optical admittance of the transparent conductor obtained by the Example and the comparative example was specified.
  • the optical admittance of wavelength 570nm of the first high refractive index layer side of the surface of the transparent metal Y1 x 1 + iy 1
  • the optical admittance of wavelength 570nm of the second high refractive index layer side of the surface of the transparent metal film Y2 x
  • Tables 3 and 4 show the values of (x 1 , y 1 ) and (x 2 , y 2 ) when 2 + iy 2 is set.
  • the optical admittance of the layer contained in the transparent conductor was calculated by the thin film design software Essential Macleod Ver.9.4.375. Note that the thickness d, refractive index n, and absorption coefficient k of each layer necessary for the calculation are as follows. A. Woollam Co. Inc. The measurement was made with a VB-250 VASE ellipsometer manufactured by the manufacturer.
  • the transparent conductor (Comparative Example 1) having no anti-sulfurization layer between the zinc sulfide-containing layer and the transparent metal film has an average transmittance of 450 to 800 nm. It was 85.3%.
  • Comparative Example 2 in which a transparent metal film having a thickness of 7.3 nm was prepared by vapor deposition, a continuous film was not obtained and electricity was not conducted.

Abstract

L'invention concerne le problème de création d'un conducteur transparent présentant une résistance à l'humidité et une transmittance élevées. Pour résoudre ce problème, le conducteur transparent de l'invention est conçu de manière à comprendre, dans l'ordre suivant: un substrat transparent; une première couche à indice de réfraction élevé contenant un matériau diélectrique ou un matériau d'oxyde semi-conducteur ayant un indice de réfraction de la lumière de 570 nm de longueur d'onde plus élevé que celui du substrat transparent; un film métallique transparent; et une seconde couche à indice de réfraction élevé contenant un matériau diélectrique ou un matériau d'oxyde semi-conducteur ayant un indice de réfraction de la lumière de 570 nm de longueur d'onde plus élevé que celui du substrat transparent. La première et/ou la seconde couche à indice de réfraction élevé sont des couches contenant du sulfure de zinc qui comprennent du ZnS; et une couche anti-sulfuration contenant un oxyde métallique, un fluorure métallique, un nitrure métallique ou Zn est présente entre la couche contenant du sulfure de zinc et le film métallique transparent.
PCT/JP2014/077094 2013-10-09 2014-10-09 Conducteur transparent WO2015053371A1 (fr)

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WO2015166850A1 (fr) * 2014-05-02 2015-11-05 コニカミノルタ株式会社 Film électroconducteur transparent

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JPH06278244A (ja) * 1993-01-29 1994-10-04 Mitsui Toatsu Chem Inc 積層体
JP2001179868A (ja) * 1999-12-27 2001-07-03 Nitto Denko Corp 透明積層体の製造方法
JP2001297630A (ja) * 2000-04-13 2001-10-26 Mitsui Chemicals Inc 透明電極
JP2002313139A (ja) * 2001-04-12 2002-10-25 Mitsui Chemicals Inc 透明導電性薄膜積層体
JP2002324431A (ja) * 2001-04-24 2002-11-08 Mitsui Chemicals Inc ディスプレイ用フィルタ及びその製造方法
JP2010184477A (ja) * 2009-02-13 2010-08-26 Toppan Printing Co Ltd 積層フィルム及びその製造方法
WO2011048648A1 (fr) * 2009-10-19 2011-04-28 東洋紡績株式会社 Film stratifié transparent électriquement conducteur

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JPH06278244A (ja) * 1993-01-29 1994-10-04 Mitsui Toatsu Chem Inc 積層体
JP2001179868A (ja) * 1999-12-27 2001-07-03 Nitto Denko Corp 透明積層体の製造方法
JP2001297630A (ja) * 2000-04-13 2001-10-26 Mitsui Chemicals Inc 透明電極
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WO2015166850A1 (fr) * 2014-05-02 2015-11-05 コニカミノルタ株式会社 Film électroconducteur transparent

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