WO2015025525A1 - Corps conducteur transparent - Google Patents

Corps conducteur transparent Download PDF

Info

Publication number
WO2015025525A1
WO2015025525A1 PCT/JP2014/004334 JP2014004334W WO2015025525A1 WO 2015025525 A1 WO2015025525 A1 WO 2015025525A1 JP 2014004334 W JP2014004334 W JP 2014004334W WO 2015025525 A1 WO2015025525 A1 WO 2015025525A1
Authority
WO
WIPO (PCT)
Prior art keywords
refractive index
index layer
transparent
high refractive
transparent conductor
Prior art date
Application number
PCT/JP2014/004334
Other languages
English (en)
Japanese (ja)
Inventor
一成 多田
仁一 粕谷
Original Assignee
コニカミノルタ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by コニカミノルタ株式会社 filed Critical コニカミノルタ株式会社
Priority to JP2015532715A priority Critical patent/JPWO2015025525A1/ja
Publication of WO2015025525A1 publication Critical patent/WO2015025525A1/fr

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C23C14/0629—Sulfides, selenides or tellurides of zinc, cadmium or mercury
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/202—Conductive
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/40—Properties of the layers or laminate having particular optical properties
    • B32B2307/412—Transparent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/40—Properties of the layers or laminate having particular optical properties
    • B32B2307/418—Refractive
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means

Definitions

  • the present invention relates to a transparent conductor including a transparent metal film.
  • transparent conductive films have been used in various materials such as electrode materials for display devices such as liquid crystal displays, plasma displays, inorganic and organic EL (electroluminescence) displays, electrode materials for inorganic and organic EL elements, touch panel materials, and solar cell materials. in use.
  • electrode materials for display devices such as liquid crystal displays, plasma displays, inorganic and organic EL (electroluminescence) displays, electrode materials for inorganic and organic EL elements, touch panel materials, and solar cell materials. in use.
  • metals such as Au, Ag, Pt, Cu, Rh, Pd, Al, and Cr, In 2 O 3 , CdO, CdIn 2 O 4 , Cd 2 SnO 4 , and TiO 2 are used.
  • SnO 2 , ZnO, ITO (indium tin oxide) and other oxide semiconductors are known.
  • a wiring made of a transparent conductive film or the like is disposed on the image display surface of the display element. Therefore, the transparent conductive film is required to have high light transmittance.
  • a transparent conductive film made of ITO having high light transmittance is often used.
  • Patent Document 1 a transparent conductive film in which Ag is arranged in a mesh shape has been proposed as a transparent conductive film replacing the ITO film.
  • the transparent conductive film of Patent Document 1 has an Ag mesh width of about 20 ⁇ m. For this reason, the Ag mesh is easily visible and cannot be applied to uses that require high transparency. Furthermore, although there is conduction at the mesh portion, it does not sufficiently conduct at the gap portion of the mesh. Therefore, the surface electrical resistance value of the transparent conductive film could not be lowered sufficiently.
  • a transparent conductive film containing Ag nanowires has also been proposed (Patent Document 2).
  • the transparent conductive film has a large surface electric resistance value, and the thickness of the transparent conductive film needs to be about 200 nm. For this reason, it has been difficult to apply the transparent conductive film to applications requiring flexibility.
  • Non-Patent Document 3 it has been studied to use an Ag vapor-deposited film as a transparent conductive film (Patent Document 3), and it has also been proposed to sandwich an Ag vapor-deposited film between two ZnS films (Non-Patent Documents 1 and 2). .
  • a transparent conductor in which a niobium oxide (Nb 2 O 5 ) film, an Ag thin film, and an IZO (indium oxide / zinc oxide) film are stacked in this order has also been proposed (Non-patent Document 3).
  • JP 2012-53644 A Special table 2009-505358 Special table 2011-508400 gazette JP 2006-184849 A JP 2002-15623 A JP 2008-226581 A
  • Non-Patent Document 1 Non-Patent Document 2
  • the Ag film is thin, plasmon absorption occurs and the light transmittance does not increase.
  • the thickness of the Ag film is increased in order to reduce the surface electrical resistance value, Ag inherent reflection occurs and the light transmittance does not increase.
  • the configuration as shown in Non-Patent Document 3 there is a problem that the Ag film is easily corroded in a moist heat environment.
  • An object of the present invention is to provide a transparent conductor in which a transparent metal film does not deteriorate over a long period of time, has high light transmittance, and has a sufficiently low surface electric resistance value.
  • the first of the present invention relates to the following transparent conductor.
  • a transparent substrate a first high-refractive-index layer containing a dielectric material or an oxide semiconductor material having a refractive index of light having a wavelength of 570 nm higher than that of light having a wavelength of 570 nm of the transparent substrate, and a thickness of 10 nm
  • a transparent metal film having a thickness of 15 nm or more and a second high refractive index layer containing ZnS in this order, and having an average transmittance of light having a wavelength of 400 to 1000 nm of 80% or more. conductor.
  • the present invention it is possible to obtain a transparent conductor that is less deteriorated over a long period of time, has high light transmittance, and has a sufficiently low surface electric resistance value.
  • FIG. 1 is a schematic sectional view showing an example of a layer structure of a transparent conductor according to the present invention.
  • FIG. 2 is a schematic sectional view showing another example of the layer structure of the transparent conductor of the present invention.
  • FIG. 3 is a schematic diagram showing an example of a pattern composed of a conductive region and an insulating region of the transparent conductor of the present invention.
  • 4A is a graph showing an admittance locus of the transparent conductor produced in Example 1 at a wavelength of 570 nm.
  • FIG. 4B is a graph showing the spectral characteristics of the transparent conductor produced in Example 1.
  • FIG. 5A is a graph showing an admittance locus of a transparent conductor having a transparent substrate / transparent metal film / high refractive index layer at a wavelength of 570 nm.
  • FIG. 5B is a graph showing admittance trajectories of a transparent conductor / transparent metal film / high refractive index layer having a wavelength of 450 nm, a wavelength of 570 nm, and a wavelength of 700 nm.
  • 6A is a graph showing an admittance locus of a wavelength of 570 nm of the transparent conductor produced in Example 2.
  • FIG. 6B is a graph showing the spectral characteristics of the transparent conductor produced in Example 2.
  • FIG. 7A is a graph showing an admittance locus of a wavelength of 570 nm of the transparent conductor produced in Example 3.
  • FIG. 7B is a graph showing the spectral characteristics of the transparent conductor produced in Example 3.
  • FIG. 8A is a graph showing the admittance locus of the transparent conductor produced in Example 4 at a wavelength of 570 nm.
  • FIG. 8B is a graph showing the spectral characteristics of the transparent conductor produced in Example 4.
  • FIG. 9A is a graph showing the admittance locus of the transparent conductor produced in Example 5 at a wavelength of 570 nm.
  • FIG. 9B is a graph showing the spectral characteristics of the transparent conductor produced in Example 5.
  • FIG. 10A is a graph showing an admittance locus of the transparent conductor produced in Example 6 at a wavelength of 570 nm.
  • FIG. 10B is a graph showing the spectral characteristics of the transparent conductor produced in Example 6.
  • FIG. 11A is a graph showing an admittance locus of a wavelength of 570 nm of the transparent conductor produced in Example 7.
  • FIG. 11B is a graph showing the spectral characteristics of the transparent conductor produced in Example 7.
  • FIG. 12A is a graph showing the admittance locus of the transparent conductor produced in Example 8 at a wavelength of 570 nm.
  • FIG. 12B is a graph showing the spectral characteristics of the transparent conductor produced in Example 8.
  • FIG. 11A is a graph showing an admittance locus of a wavelength of 570 nm of the transparent conductor produced in Example 7.
  • FIG. 11B is a graph showing the spectral characteristics of the transparent conductor produced in Example 7.
  • FIG. 12A is a graph
  • FIG. 13A is a graph showing the admittance locus of the transparent conductor produced in Example 9 at a wavelength of 570 nm.
  • FIG. 13B is a graph showing the spectral characteristics of the transparent conductor produced in Example 9.
  • FIG. 14A is a graph showing an admittance locus of the transparent conductor produced in Example 10 at a wavelength of 570 nm.
  • FIG. 14B is a graph showing the spectral characteristics of the transparent conductor produced in Example 10.
  • FIG. 15A is a graph showing an admittance locus of a wavelength of 570 nm of the transparent conductor produced in Example 11.
  • FIG. 15B is a graph showing the spectral characteristics of the transparent conductor produced in Example 11.
  • FIG. 16A is a graph showing an admittance locus of a wavelength of 570 nm of the transparent conductor produced in Example 12.
  • FIG. 16B is a graph showing the spectral characteristics of the transparent conductor produced in Example 12.
  • FIG. 17A is a graph showing an admittance locus of the transparent conductor produced in Example 13 at a wavelength of 570 nm.
  • FIG. 17B is a graph showing the spectral characteristics of the transparent conductor produced in Example 13.
  • FIG. 18A is a graph showing the admittance locus of the transparent conductor produced in Example 14 at a wavelength of 570 nm.
  • FIG. 18B is a graph showing the spectral characteristics of the transparent conductor produced in Example 14.
  • FIG. 19A is a graph showing the admittance locus of the transparent conductor produced in Example 15 at a wavelength of 570 nm.
  • FIG. 19B is a graph showing the spectral characteristics of the transparent conductor produced in Example 15.
  • FIG. 20A is a graph showing an admittance locus of the transparent conductor produced in Example 16 at a wavelength of 570 nm.
  • 20B is a graph showing the spectral characteristics of the transparent conductor produced in Example 16.
  • FIG. FIG. 21A is a graph showing the admittance locus of the transparent conductor produced in Comparative Example 1 at a wavelength of 570 nm.
  • FIG. 21B is a graph showing the spectral characteristics of the transparent conductor produced in Comparative Example 1.
  • FIG. 22A is a graph showing an admittance locus of a transparent conductor produced in Comparative Example 3 at a wavelength of 570 nm.
  • FIG. 22B is a graph showing the spectral characteristics of the transparent conductor produced in Comparative Example
  • the transparent conductor 100 of the present invention has a transparent substrate 1 / first high refractive index layer 2 / transparent metal film 3 / second high refractive index layer 4 laminated in this order. It consists of a laminate.
  • the transparent metal film 3 may be laminated on the entire surface of the transparent substrate 1 as shown in FIG. 1, or may be patterned into a desired shape as shown in FIG. .
  • the region a where the transparent metal film 3 is laminated is a region where electricity is conducted (hereinafter also referred to as “conduction region”).
  • the region b not including the transparent metal film 3 is an insulating region.
  • the pattern composed of the conductive region a and the insulating region b is appropriately selected according to the use of the transparent conductor 100.
  • the pattern includes a plurality of conductive regions a and line-shaped insulating regions b that divide the conductive regions a. sell.
  • the transparent conductor 100 (laminated body) of the present invention may include layers other than the transparent substrate 1, the first high refractive index layer 2, the transparent metal film 3, and the second high refractive index layer 4.
  • an underlayer (not shown) that becomes a growth nucleus when the transparent metal film 3 is formed may be included between the first high refractive index layer 2 and the transparent metal film 3; 4 may include a low refractive index layer (not shown) for adjusting the light transmittance of the transparent conductor 100.
  • a third high refractive index layer (not shown) for adjusting the transparency of the transparent conductor may be included on the low refractive index layer.
  • the layers included in the transparent conductor 100 of the present invention are all layers made of an inorganic material except for the transparent substrate 1.
  • the transparent conductor 100 of the present invention are all layers made of an inorganic material except for the transparent substrate 1.
  • an adhesive layer made of an organic resin is laminated on the second high refractive index layer 4, the laminated body from the transparent substrate 1 to the second high refractive index layer 4 is the transparent conductor 100 of the present invention. .
  • the transparent conductor of the present invention As described above, with a conventional Ag film, plasmon absorption occurs when the thickness is reduced, and reflection of light inherent to Ag tends to occur when the thickness is increased. Therefore, it has been difficult to increase the light transmittance of the transparent conductor including the Ag film.
  • the transparent metal film 3 is formed by sputtering, or an underlayer that can be a growth nucleus at the time of forming the transparent metal film is formed and then the transparent metal film 3 is formed.
  • the average transmittance of light with a wavelength of 400 nm to 1000 nm of the transparent conductor is set to 80% or more. Therefore, the transparent conductor can also be applied to uses that require high light transmittance.
  • the transparent metal film 3 is sandwiched between the first high refractive index layer 2 and the second high refractive index layer 4 having a high refractive index.
  • the transparent conductor 100 having such a configuration as will be described later, reflection of light on the surface of the conduction region a is suppressed, and the light transmittance of the transparent conductor 100 is likely to increase.
  • the transparent metal film was easily corroded in a humid heat environment.
  • the transparent metal film 3 is laminated with the second high refractive index layer 4 containing ZnS and having a thickness of 15 nm or more.
  • the second high refractive index layer 4 has very low moisture permeability. Therefore, in the transparent conductor 100 of the present invention, the transparent metal film 3 is hardly corroded over a long period of time, and the low surface electrical resistance of the transparent conductor 100 is maintained.
  • the transparent substrate 1 included in the transparent conductor 100 can be the same as the transparent substrate of various display devices.
  • the transparent substrate 1 includes a glass substrate, a cellulose ester resin (for example, triacetylcellulose, diacetylcellulose, acetylpropionylcellulose, etc.), a polycarbonate resin (for example, Panlite, Multilon (both manufactured by Teijin Limited)), a cycloolefin resin (for example, ZEONOR (manufactured by Nippon Zeon), Arton (manufactured by JSR), APPEL (manufactured by Mitsui Chemicals)), acrylic resin (for example, polymethyl methacrylate, "Acrylite (manufactured by Mitsubishi Rayon), Sumipex (manufactured by Sumitomo Chemical)”) ), Polyimide, phenol resin, epoxy resin, polyphenylene ether (PPE) resin, polyester resin (eg., polyimide, phenol resin, epoxy resin, polyphen
  • the transparent substrate 1 is a glass substrate, or a cellulose ester resin, a polycarbonate resin, a polyester resin (particularly polyethylene terephthalate), a triacetyl cellulose, a cycloolefin resin, a phenol resin, an epoxy resin, a polyphenylene ether (PPE) resin,
  • a film made of polyethersulfone, ABS / AS resin, MBS resin, polystyrene, methacrylic resin, polyvinyl alcohol / EVOH (ethylene vinyl alcohol resin), or styrene block copolymer resin is preferable.
  • the transparent substrate 1 preferably has high transparency to visible light; the average transmittance of light having a wavelength of 450 to 800 nm is preferably 70% or more, more preferably 80% or more, and 85% or more. More preferably it is. When the average light transmittance of the transparent substrate 1 is 70% or more, the light transmittance of the transparent conductor 100 is likely to be increased. Further, the average absorptance of light having a wavelength of 450 to 800 nm of the transparent substrate 1 is preferably 10% or less, more preferably 5% or less, and further preferably 3% or less.
  • the average transmittance is measured by making light incident from an angle inclined by 5 ° with respect to the normal line of the surface of the transparent substrate 1.
  • Average transmittance and average reflectance are measured with a spectrophotometer.
  • the refractive index of light having a wavelength of 570 nm of the transparent substrate 1 is preferably 1.40 to 1.95, more preferably 1.45 to 1.75, and still more preferably 1.45 to 1.70. .
  • the refractive index of the transparent substrate is usually determined by the material of the transparent substrate. The refractive index of the transparent substrate is measured with an ellipsometer.
  • the haze value of the transparent substrate 1 is preferably 0.01 to 2.5, more preferably 0.1 to 1.2. If the haze value of the transparent substrate 1 is 2.5 or less, the haze value of the transparent conductor 100 is suppressed. The haze value is measured with a haze meter.
  • the thickness of the transparent substrate 1 is preferably 1 ⁇ m to 20 mm, more preferably 10 ⁇ m to 2 mm.
  • the thickness of the transparent substrate 1 is 1 ⁇ m or more, the strength of the transparent substrate 1 is increased, and the first high refractive index layer 2 is difficult to be cracked or torn.
  • the thickness of the transparent substrate 1 is 20 mm or less, the flexibility of the transparent conductor 100 is sufficient.
  • the thickness of the apparatus using the transparent conductor 100 can be reduced.
  • the apparatus using the transparent conductor 100 can also be reduced in weight.
  • the first high refractive index layer 2 adjusts the light transmittance (optical admittance) of the conductive region a of the transparent conductor 100, that is, the region where the transparent metal film 3 is formed. It is a layer to do. Therefore, the first high refractive index layer 2 is formed in the conduction region a of the transparent conductor 100. Although the first high refractive index layer 2 may be formed also in the insulating region b of the transparent conductor 100, as will be described later, from the viewpoint of making it difficult to visually recognize the pattern composed of the conductive region a and the insulating region b. It is preferable that it is formed only in the conduction region a.
  • the first high refractive index layer 2 includes a dielectric material or an oxide semiconductor material having a refractive index higher than the refractive index of the transparent substrate 1 described above.
  • the refractive index of light having a wavelength of 570 nm of the dielectric material or oxide semiconductor material is preferably 0.1 to 1.1 larger than the refractive index of light having a wavelength of 570 nm of the transparent substrate 1, and is preferably 0.4 to 1.0. Larger is more preferable.
  • the specific refractive index of light having a wavelength of 570 nm of the dielectric material or oxide semiconductor material contained in the first high refractive index layer 2 is preferably larger than 1.5 and is 1.7 to 2.5. More preferably, it is 1.8 to 2.5.
  • the optical admittance of the conductive region a of the transparent conductor 100 is sufficiently adjusted by the first high refractive index layer 2.
  • the refractive index of the first high refractive index layer 2 is adjusted by the refractive index of the material included in the first high refractive index layer 2 and the density of the material included in the first high refractive index layer 2.
  • the dielectric material or oxide semiconductor material contained in the first high refractive index layer 2 may be an insulating material or a conductive material.
  • the dielectric material or oxide semiconductor material is preferably a metal oxide or metal sulfide.
  • metal oxides or metal sulfides include TiO 2 , ITO (indium tin oxide), ZnO, ZnS, Nb 2 O 5 , ZrO 2 , CeO 2 , Ta 2 O 5 , Ti 3 O 5 , Ti 4 O.
  • the first high refractive index layer 2 may contain only one kind of the metal oxide or metal sulfide, or may contain two or more kinds.
  • the metal oxide or metal sulfide is preferably TiO 2 , ITO, ZnO, Nb 2 O 5 or ZnS from the viewpoint of refractive index and productivity, and particularly preferably ZnS.
  • ZnS is contained in the first high refractive index layer 2, it becomes difficult for moisture to permeate from the transparent substrate 1 side to the transparent metal film 3 side, and corrosion of the transparent metal film 3 is further suppressed.
  • ZnS is preferably contained in an amount of 5% by mass or more, more preferably 50% by mass or more, further preferably 70% by mass or more, and particularly preferably 80% by mass with respect to the total mass of the first high refractive index layer 2. It is at least mass%.
  • the thickness of the first high refractive index layer 2 is preferably 15 to 150 nm, more preferably 20 to 80 nm.
  • the thickness of the first high refractive index layer 2 is 15 nm or more, the optical admittance of the conductive region a of the transparent conductor 100 is sufficiently adjusted by the first high refractive index layer 2.
  • the thickness of the first high refractive index layer 2 is 150 nm or less, the light transmittance of the region including the first high refractive index layer 2 is unlikely to decrease.
  • the thickness of the first high refractive index layer 2 is measured with an ellipsometer.
  • the first high refractive index layer 2 can be a layer formed by a general vapor deposition method such as a vacuum deposition method, a sputtering method, an ion plating method, a plasma CVD method, a thermal CVD method or the like. From the viewpoint of increasing the refractive index (density) of the first high refractive index layer 2, the first high refractive index layer 2 is preferably a layer formed by an electron beam evaporation method or a sputtering method. In the case of the electron beam evaporation method, it is desirable to have assistance such as IAD (ion assist) in order to increase the film density.
  • IAD ion assist
  • the patterning method is not particularly limited.
  • the first high refractive index layer 2 may be, for example, a layer formed in a pattern by a vapor deposition method by arranging a mask having a desired pattern on the film formation surface; It may be a layer patterned by an etching method.
  • the transparent metal film 3 is a film for conducting electricity in the transparent conductor 100.
  • the transparent metal film 3 may be formed on the entire surface of the transparent substrate 1 as described above, or may be patterned into a desired shape.
  • the metal contained in the transparent metal film 3 is not particularly limited as long as it is a highly conductive metal, and may be, for example, silver, copper, gold, platinum group, titanium, chromium, or the like.
  • the transparent metal film 3 may contain only one kind of these metals or two or more kinds.
  • the transparent metal film 3 is preferably made of silver or an alloy containing 90 at% or more of silver.
  • the metal combined with silver can be zinc, gold, copper, palladium, aluminum, manganese, bismuth, neodymium, molybdenum, and the like.
  • the sulfidation resistance of the transparent metal film 3 is enhanced.
  • salt resistance (NaCl) resistance increases.
  • silver and copper are combined, the oxidation resistance increases.
  • the plasmon absorption rate of the transparent metal film 3 is preferably 10% or less (over the entire range) over a wavelength range of 400 nm to 800 nm, more preferably 7% or less, and further preferably 5% or less. If there is a region having a large plasmon absorption rate in a part of the wavelength of 400 nm to 800 nm, the transmitted light of the conductive region a of the transparent conductor 100 is likely to be colored.
  • the plasmon absorption rate at a wavelength of 400 nm to 800 nm of the transparent metal film 3 is measured by the following procedure.
  • the thickness of the transparent metal film 3 is 10 nm or less, preferably 3 to 9 nm, and more preferably 5 to 8 nm.
  • the transparent conductor 100 of the present invention since the transparent metal film 3 has a thickness of 10 nm or less, the metal reflection is hardly generated in the transparent metal film 3. Furthermore, since the thickness of the transparent metal film 3 is 10 nm or less, the optical admittance of the transparent conductor 100 is easily adjusted by the first high refractive index layer 2 and the second high refractive index layer 4 as will be described later. Reflection of light on the surface of the region a is likely to be suppressed.
  • the thickness of the transparent metal film 3 is measured with an ellipsometer.
  • the transparent metal film 3 can be a film formed by any film forming method, but as described above, in order to make the average transmittance of light with a wavelength of 400 to 1000 nm of the transparent conductor 100 80% or more. Is preferably a film formed by sputtering; or a film formed on an underlayer described later.
  • the sputtering method since the material collides with the deposition target at high speed during film formation, a dense and smooth film is easily obtained; the light transmittance of the transparent metal film 3 is likely to increase. Moreover, when the transparent metal film 3 is a film formed by sputtering, the transparent metal film 3 is hardly corroded even in an environment of high temperature and low humidity.
  • the type of the sputtering method is not particularly limited, and may be an ion beam sputtering method, a magnetron sputtering method, a reactive sputtering method, a bipolar sputtering method, a bias sputtering method, a counter sputtering method, or the like.
  • the transparent metal film 3 is particularly preferably a film formed by a counter sputtering method.
  • the transparent metal film 3 is a film formed by the facing sputtering method, the transparent metal film 3 becomes dense and the surface smoothness is likely to increase. As a result, the surface electrical resistance of the transparent metal film 3 becomes lower and the light transmittance is likely to increase.
  • the method for forming the transparent metal film 3 is not particularly limited, and may be a general vapor deposition method such as a vacuum deposition method, a sputtering method, an ion plating method, a plasma CVD method, a thermal CVD method, or the like.
  • the patterning method is not particularly limited.
  • the transparent metal film 3 may be, for example, a film formed by arranging a mask having a desired pattern; it may be a film patterned by a known etching method.
  • the second high refractive index layer 4 adjusts the light transmittance (optical admittance) of the conductive region a of the transparent conductor 100, that is, the region where the transparent metal film 3 is formed. And is a layer for protecting the transparent metal film 3 from external moisture and the like. Therefore, the second high refractive index layer 4 is formed in the conduction region a of the transparent conductor 100.
  • the second high-refractive index layer 4 may be formed in the insulating region b of the transparent conductor 100.
  • the second high-refractive index layer 4 is conductive from the viewpoint of making it difficult to visually recognize the pattern including the conductive region a and the insulating region b. It is preferably formed only in the region a.
  • the second high refractive index layer 4 contains ZnS. Specifically, ZnS is contained in an amount of 5% by mass or more with respect to the total mass of the second high refractive index layer 4, preferably 50% by mass or more, more preferably 70% by mass or more, and further preferably 80%. It is at least mass%. When the amount of ZnS is 5% by mass or more, the moisture permeability of the second high refractive index layer 4 is lowered, and the corrosion of the transparent metal film 3 is sufficiently suppressed.
  • the second high refractive index layer 4 may contain other components other than ZnS in an amount of less than 50% by mass, but the amount of other components is preferably less than 30% by mass, more preferably 20% by mass. %.
  • Examples of other components include TiO 2 , ITO (indium tin oxide), ZnO, ZnS, Nb 2 O 5 , ZrO 2 , CeO 2 , Ta 2 O 5 , Ti 3 O 5 , Ti 4 O 7 , Ti 2.
  • O 3 TiO, SnO 2 , La 2 Ti 2 O 7 , IZO (indium oxide / zinc oxide), AZO (Al-doped ZnO), GZO (Ga-doped ZnO), ATO (Sb-doped SnO), ICO (indium cerium oxide) ), Bi 2 O 3 , a-GIO (amorphous oxide composed of gallium, indium, and oxygen).
  • the thickness of the second high refractive index layer 4 is 15 nm or more, and usually 150 nm or less.
  • the thickness of the second high refractive index layer 4 is more preferably 15 to 150 nm, still more preferably 20 to 80 nm.
  • the second high refractive index layer 4 sufficiently adjusts the optical admittance of the conductive region a of the transparent conductor 100.
  • the thickness of the second high refractive index layer 4 is 150 nm or less, the light transmittance of the region including the second high refractive index layer 4 is unlikely to decrease.
  • the thickness of the second high refractive index layer 4 is measured with an ellipsometer.
  • the film formation method of the second high refractive index layer 4 is not particularly limited, and is formed by a general vapor deposition method such as a vacuum deposition method, a sputtering method, an ion plating method, a plasma CVD method, a thermal CVD method, or the like. Layer. From the viewpoint that the moisture permeability of the second high refractive index layer 4 is lowered, the second high refractive index layer 4 is particularly preferably a film formed by sputtering.
  • the patterning method is not particularly limited.
  • the second high refractive index layer 4 may be, for example, a layer formed in a pattern by a vapor deposition method by placing a mask having a desired pattern on the deposition surface.
  • the layer patterned by the well-known etching method may be sufficient.
  • an underlayer serving as a growth nucleus when the transparent metal film 3 is formed may be included between the first high refractive index layer 2 and the transparent metal film 3.
  • the underlayer is preferably formed at least in the conductive region a of the transparent conductor 100, and may be formed in the insulating region b of the transparent conductor 100.
  • the smoothness of the surface of the transparent metal film 3 is enhanced even if the transparent metal film 3 is thin. The reason is as follows.
  • the first high refractive index layer 2 is formed at the initial stage of film formation.
  • the atoms attached to the metal migrate (move), and the atoms gather together to form a lump (island structure). And a film grows clinging to this lump. Therefore, in the film at the initial stage of film formation, there is a gap between the lumps and it is not conductive.
  • a lump further grows from this state, a part of the lump is connected and barely conducted. However, since there is still a gap between the lumps, plasmon absorption occurs. As the film formation proceeds further, the lumps are completely connected and plasmon absorption is reduced.
  • the intrinsic reflection of the metal occurs, and the light transmittance of the film decreases.
  • the transparent metal film 3 grows using the base layer as a growth nucleus. That is, the material of the transparent metal film 3 is difficult to migrate, and the film grows without forming the island-like structure described above. As a result, it becomes easy to obtain a smooth transparent metal film 3 even if the thickness is small.
  • the base layer contains palladium, molybdenum, zinc, germanium, niobium, or indium; or an alloy of these metals with other metals, or an oxide or sulfide of these metals (for example, ZnS). Is preferred.
  • the underlayer may contain only one kind, or two or more kinds.
  • the amount of palladium, molybdenum, zinc, germanium, niobium or indium contained in the underlayer is preferably 20% by mass or more, more preferably 40% by mass or more, and further preferably 60% by mass or more.
  • the metal is contained in the base layer in an amount of 20% by mass or more, the affinity between the base layer and the transparent metal film 3 is increased, and the adhesion between the base layer and the transparent metal film 3 is likely to be increased. It is particularly preferable that the underlayer contains palladium or molybdenum.
  • the metal that forms an alloy with palladium, molybdenum, zinc, germanium, niobium, or indium is not particularly limited, but may be a platinum group other than palladium, gold, cobalt, nickel, titanium, aluminum, chromium, or the like.
  • the thickness of the underlayer is 3 nm or less, preferably 0.5 nm or less, and more preferably a monoatomic film.
  • the underlayer can also be a film in which metal atoms adhere to the transparent substrate 1 with a distance therebetween. If the adhesion amount of the underlayer is 3 nm or less, the underlayer is unlikely to affect the optical admittance of the transparent conductor 100. The presence or absence of the underlayer is confirmed by the ICP-MS method. Further, the thickness of the underlayer is calculated from the product of the film formation speed and the film formation time.
  • the underlayer can be a layer formed by sputtering or vapor deposition.
  • the sputtering method include an ion beam sputtering method, a magnetron sputtering method, a reactive sputtering method, a bipolar sputtering method, and a bias sputtering method.
  • the sputtering time during the underlayer film formation is appropriately selected according to the desired average thickness of the underlayer and the film formation speed.
  • the sputter deposition rate is preferably from 0.1 to 15 ⁇ / second, more preferably from 0.1 to 7 ⁇ / second.
  • examples of the vapor deposition method include vacuum vapor deposition method, electron beam vapor deposition method, ion plating method, ion beam vapor deposition method and the like.
  • the deposition time is appropriately selected according to the desired thickness of the underlayer and the film formation rate.
  • the deposition rate is preferably 0.1 to 15 ⁇ / second, more preferably 0.1 to 7 ⁇ / second.
  • the underlayer may be, for example, a layer formed in a pattern by a vapor deposition method by placing a mask having a desired pattern on the deposition surface; patterned by a known etching method It may be a layer.
  • the transparent conductor 100 of the present invention has the light transmittance (optical admittance) of the conductive region a of the transparent conductor 100 on the second high refractive index layer 4.
  • a low refractive index layer to be adjusted may be included.
  • the low refractive index layer may be formed only in the conductive region a of the transparent conductor 100, or may be formed in both the conductive region a and the insulating region b of the transparent conductor 100.
  • the low refractive index layer includes a dielectric material or an oxide semiconductor material included in the first high refractive index layer 2 and a refractive index of light having a wavelength of 570 nm of ZnS included in the second high refractive index layer 4.
  • a dielectric material or an oxide semiconductor material having a low refractive index of light at 570 nm is included.
  • the light refractive index of the dielectric material or oxide semiconductor material included in the low refractive index layer at a wavelength of 570 nm is the light refractive index of the above material included in the first high refractive index layer 2 and the second high refractive index layer 4.
  • the refractive index is preferably 0.2 or more and more preferably 0.4 or more, respectively.
  • the specific refractive index of light having a wavelength of 570 nm of the dielectric material or oxide semiconductor material contained in the low refractive index layer is preferably less than 1.8, more preferably 1.30 to 1.6, Particularly preferred is 1.35 to 1.5.
  • the refractive index of the low refractive index layer is mainly adjusted by the refractive index of the material included in the low refractive index layer and the density of the material included in the low refractive index layer.
  • the dielectric material or oxide semiconductor material contained in the low refractive index layer is MgF 2 , SiO 2 , AlF 3 , CaF 2 , CeF 3 , CdF 3 , LaF 3 , LiF, NaF, Nad, NdF 3 , YF 3 , YbF 3. , Ga 2 O 3 , LaAlO 3 , Na 3 AlF 6 , Al 2 O 3 , MgO, and ThO 2 .
  • Dielectric material or an oxide semiconductor material is inter alia, is MgF 2, SiO 2, CaF 2 , CeF 3, LaF 3, LiF, NaF, NdF 3, Na 3 AlF 6, Al 2 O 3, MgO or ThO 2,
  • MgF 2 and SiO 2 are particularly preferable. Only one of these materials may be included in the low refractive index layer, or two or more of these materials may be included.
  • the thickness of the low refractive index layer is preferably 10 to 150 nm, more preferably 20 to 100 nm.
  • the thickness of the low refractive index layer is 10 nm or more, the optical admittance on the surface of the transparent conductor 100 is easily finely adjusted.
  • the thickness of the low refractive index layer is 150 nm or less, the thickness of the transparent conductor 100 is reduced.
  • the thickness of the low refractive index layer is measured with an ellipsometer.
  • the low refractive index layer may be a layer formed by a general vapor deposition method such as a vacuum deposition method, a sputtering method, an ion plating method, a plasma CVD method, a thermal CVD method or the like. From the viewpoint of easiness of film formation, the low refractive index layer is preferably a layer formed by electron beam evaporation or sputtering.
  • the low refractive index layer is a patterned layer
  • the patterning method is not particularly limited.
  • the low refractive index layer may be, for example, a layer formed in a pattern by a vapor deposition method by placing a mask having a desired pattern on the deposition surface; It may be a patterned layer.
  • the light transmittance (optical admittance) of the conductive region a of the transparent conductor 100 is further provided on the low refractive index layer.
  • a third high refractive index layer to be adjusted may be included.
  • the third high refractive index layer may be formed only in the conductive region a of the transparent conductor 100, or may be formed in both the conductive region a and the insulating region b of the transparent conductor 100.
  • the third high refractive index layer preferably contains a dielectric material or an oxide semiconductor material having a refractive index higher than the refractive index of the transparent substrate 1 and the refractive index of the low refractive index layer.
  • the specific refractive index of light having a wavelength of 570 nm of the dielectric material or oxide semiconductor material contained in the third high refractive index layer is preferably larger than 1.5, more preferably 1.7 to 2.5. Preferably, it is 1.8 to 2.5.
  • the refractive index of the dielectric material or the oxide semiconductor material is larger than 1.5, the optical admittance of the conductive region a of the transparent conductor 100 is sufficiently adjusted by the third high refractive index layer.
  • the refractive index of the third high refractive index layer is adjusted by the refractive index of the material included in the third high refractive index layer and the density of the material included in the third high refractive index layer.
  • the dielectric material or oxide semiconductor material included in the third high refractive index layer may be an insulating material or a conductive material.
  • the dielectric material or oxide semiconductor material is preferably a metal oxide or metal sulfide.
  • Examples of the metal oxide or metal sulfide include the metal oxide or metal sulfide contained in the first high refractive index layer 2 or the second high refractive index layer 4 described above.
  • the third high refractive index layer may contain only one kind of the metal oxide or metal sulfide, or may contain two or more kinds.
  • the thickness of the third high refractive index layer is not particularly limited, and is preferably 1 to 40 nm, and more preferably 5 to 20 nm. When the thickness of the third high refractive index layer is within the above range, the optical admittance of the conductive region a of the transparent conductor 100 is sufficiently adjusted. The thickness of the third high refractive index layer is measured with an ellipsometer.
  • the film formation method of the third high refractive index layer is not particularly limited, and may be a layer formed by the same method as the first high refractive index layer 2 and the second high refractive index layer 4.
  • the transparent metal film 3 is sandwiched between the first high refractive index layer 2 and the second high refractive index layer 4. As a result, the reflection of the surface of the region including the transparent metal film 3; that is, the conduction region a is suppressed, and the light transmittance of the conduction region a is increased. The reason will be described below.
  • the reflectance R of the surface of the transparent conductor (conducting region a) is determined by the optical admittance Y env of the medium on which light is incident and the equivalent admittance Y of the surface of the transparent conductor. Determined from E.
  • the medium on which the light is incident refers to a member or environment through which light incident on the transparent conductor passes immediately before the incident; a member or environment made of an organic resin.
  • the relationship between the optical admittance Y env of the medium and the equivalent admittance Y E of the surface of the transparent conductor is expressed by the following equation. Based on the above formula, the closer the value
  • the optical admittance Y env of the medium is obtained from the ratio (H / E) of the electric field strength and the magnetic field strength, and is the same as the refractive index n env of the medium.
  • the equivalent admittance Y E is determined from the optical admittance Y of the layers constituting the transparent conductor. For example, when the transparent conductor (transmission region a) is composed of one is equivalent admittance Y E of the transparent conductor is equal to the of the layer optical admittance Y (refractive index).
  • the optical admittance Y x (E x H x ) of the laminate from the first layer to the x layer is the laminate from the first layer to the (x ⁇ 1) layer. It is represented by the product of the optical admittance Y x-1 (E x-1 H x-1 ) of the body and a specific matrix; specifically, it is obtained by the following formula (1) or formula (2).
  • the x-th layer is a layer made of a dielectric material or an oxide semiconductor material
  • the optical admittance Yx (E x H x ) of the laminate from the transparent substrate to the outermost layer becomes the equivalent admittance Y E of the transparent conductor.
  • FIG. 4A shows a transparent conductor (transparent substrate / first high refractive index layer (ZnS) / underlayer (Mo) / transparent metal film (Ag) / second high refractive index layer (ZnS) of Example 1 described later.
  • electrical_connection area a of the transparent conductor provided) is shown.
  • the horizontal axis of the graph is the real part when the optical admittance Y of the region is represented by x + iy; that is, x in the equation, and the vertical axis is the imaginary part of the optical admittance; that is, y in the equation.
  • the optical admittance can be disregarded.
  • the final coordinates of the admittance locus is equivalent admittance Y E conductive region a.
  • the distance between the coordinates (x E , y E ) of the equivalent admittance Y E and the admittance coordinates (n env , 0) (not shown) of the medium on which the light is incident is the surface of the conductive region a of the transparent conductor. It is proportional to the reflectance R of
  • FIG. 5A shows an admittance locus of a transparent conductor having a transparent substrate / transparent metal film / high refractive index layer in this order
  • FIG. 5B shows an admittance locus of the transparent conductor having a wavelength of 450 nm, a wavelength of 570 nm, and a wavelength of 700 nm. Show the trajectory. As shown in FIG.
  • the admittance locus in the direction of the vertical axis (imaginary part) from the start point of the admittance locus (the admittance coordinates (about 1.5,0) of the transparent substrate). Moves greatly, and the absolute value of the imaginary part of the admittance coordinates becomes very large.
  • the equivalent admittance Y E approaches the admittance coordinates (n env , 0) of the medium on which light is incident even if a high refractive index layer is laminated on the transparent metal film. hard.
  • the admittance locus when a transparent metal film is directly laminated on a transparent substrate, the admittance locus is less likely to be line symmetric about the horizontal axis of the graph. If the admittance locus at a specific wavelength (570 nm in the present invention) is not line symmetric about the horizontal axis of the graph, as shown in FIG. 5B, equivalent admittance Y E at other wavelengths (for example, 450 nm and 700 nm). The coordinates of are easy to shake greatly. For this reason, a wavelength region in which the reflectance R cannot be sufficiently reduced occurs.
  • the first high refractive index layer when the transparent metal film is sandwiched between layers having a high refractive index (first high refractive index layer and second high refractive index layer), the first high refractive index layer
  • the coordinates of the imaginary part of the admittance locus greatly move in the positive direction. And even if an admittance locus
  • the equivalent admittance Y E is applied to the medium on which the light is incident. Close to admittance coordinates (n env , 0).
  • the admittance locus tends to be line symmetric about the horizontal axis of the graph.
  • the equivalent admittance Y E is close to the admittance coordinates (n env , 0) of the medium on which the light is incident.
  • it is preferable that one or both of x 1 and x 2 is 1.6 or more. either one of x 1 and x 2 are, increases light transmission of the transparent conductor If it is 1.6 or more. The reason will be described below.
  • the following relational expression holds between the admittance Y at the interface of each layer and the electric field strength E existing in each layer. Based on the above relational expression, if the real part (x 1 and x 2 ) of the optical admittances Y1 and Y2 on the surface of the transparent metal film is increased, the electric field strength E is decreased and the electric field loss (light absorption) is suppressed. . That is, the light transmittance of the transparent conductor is sufficiently increased.
  • x 1 and x 2 are preferably 1.6 or more, more preferably 1.8 or more, and further preferably 2.0 or more.
  • x 1 is preferably 1.6 or more.
  • the x 1 and x 2 is preferably 7.0 or less, more preferably 5.5 or less.
  • x 1 is the refractive index of the first high refractive index layer and is adjusted in such a thickness of the first high refractive index layer.
  • x 2 is the refractive index of the values and the transparent metal film x 1, is adjusted by the thickness or the like of the first transparent metal film.
  • ) of the difference between x 1 and x 2 is preferably 1.5 or less, more preferably 1.0 or less, and even more preferably 0.8 or less. is there.
  • the admittance trajectory is preferably line symmetric about the horizontal axis of the graph. Therefore, a coordinate y 1 of the imaginary part of the Y1, the coordinate y 2 of the imaginary part of the Y2, it is preferable to satisfy the y 1 ⁇ y 2 ⁇ 0. Furthermore,
  • the aforementioned y 1 is sufficiently large.
  • the optical admittance of the transparent metal film has a large imaginary part value, and the admittance locus greatly moves in the vertical axis (imaginary part) direction. Therefore, if y 1 is sufficiently large, the absolute value of the imaginary part of the admittance coordinates falls within an appropriate range, and the admittance locus tends to be line symmetric.
  • y 1 is preferably 0.2 or more, more preferably 0.3 to 1.5, and still more preferably 0.3 to 1.0.
  • y 2 described above is preferably ⁇ 0.3 to ⁇ 2.0, and more preferably ⁇ 0.6 to ⁇ 1.5.
  • Distance from equivalent admittance coordinates (n env , 0) ((x E ⁇ n env ) 2 + (y E ) 2 ) 0.5 is preferably less than 0.5, more preferably 0.3 or less It is. When the distance is less than 0.5, the reflectance Ra of the surface of the conduction region a is sufficiently small, and the light transmittance of the conduction region a is increased.
  • an equivalent admittance coordinate (x E , y E ) of light with a wavelength of 570 nm in the conduction region a and an equivalent admittance coordinate (( x ( b , y b )), ((x E ⁇ x b ) 2 + (y E ⁇ y b ) 2 ) 0.5 is preferably less than 0.5, more preferably 0 .3 or less.
  • the coordinates of the equivalent admittance Y E of the conducting areas a sufficiently close to the coordinates of the equivalent admittance Y b of the insulating region b; that is ((x E -x b) 2 + (y E -y b) 2) 0.
  • the admittance trajectory of the conduction region a is symmetrical with respect to the horizontal axis of the graph, and (ii) the insulating region includes only a transparent substrate. preferable.
  • admittance locus conductive region a is in line symmetry about the horizontal axis of the graph, the coordinate of Y E is because approaching the naturally transparent substrate 1 admittance.
  • the average transmittance of light having a wavelength of 400 to 1000 nm of the transparent conductor 100 of the present invention is 80% or more, preferably 83% or more, more preferably 85% or more.
  • the average transmittance is 80% or more in any region.
  • the transparent conductor 100 is used in applications requiring transparency with respect to light in a wide wavelength range, such as a transparent conductive film for solar cells. Can be applied.
  • the average transmittance of light having a wavelength of 450 to 800 nm of the transparent conductor 100 is preferably 83% or more, more preferably 85% or more in any of the conduction region a and the insulation region b. Preferably it is 88% or more. If the average transmittance in the above wavelength range is 85% or more, the transparent conductor 100 can be applied to applications that require high transparency to visible light.
  • the average absorptance of light having a wavelength of 400 nm to 800 nm of the transparent conductor 100 is preferably 10% or less, more preferably 8% or less, and even more preferably in both the conduction region a and the insulation region b. Is 7% or less.
  • the maximum value of the light absorptance of the wavelength 450 nm to 800 nm of the transparent conductor 100 is preferably 15% or less in both the conduction region a and the insulation region b, more preferably 10% or less, More preferably, it is 9% or less.
  • the average reflectance of light having a wavelength of 500 nm to 700 nm of the transparent conductor 100 is preferably 20% or less, more preferably 15% or less, in any of the conduction region a and the insulation region b. Preferably it is 10% or less.
  • the average transmittance, average reflectance, and average reflectance are preferably the average transmittance, average reflectance, and average reflectance under the usage environment of the transparent conductor 100.
  • the transparent conductor 100 when the transparent conductor 100 is used by being bonded to an organic resin, it is preferable to measure the average transmittance and the average reflectance by disposing a layer made of the organic resin on the transparent conductor 100.
  • the transparent conductor 100 when the transparent conductor 100 is used in the air, it is preferable to measure the average transmittance and the average reflectance in the air.
  • the transmittance and the reflectance are measured with a spectrophotometer by allowing measurement light to enter from an angle inclined by 5 ° with respect to the normal of the surface of the transparent conductor 100.
  • the absorptance is calculated from the formula of 100 ⁇ (transmittance + reflectance).
  • the reflectance of the conductive region a and the insulating region b are approximated.
  • the difference ⁇ R between the luminous reflectance of the conductive region a and the luminous reflectance of the insulating region b is preferably 3% or less, more preferably 1% or less, and even more preferably 0. .3% or less.
  • the luminous reflectances of the conductive region a and the insulating region b are each preferably 5% or less, more preferably 3% or less, and further preferably 1% or less.
  • the luminous reflectance is a Y value measured with a spectrophotometer (U4100; manufactured by Hitachi High-Technologies Corporation).
  • the a * value and the b * value in the L * a * b * color system are preferably within ⁇ 30 in any region. More preferably, it is within ⁇ 5, more preferably within ⁇ 3.0, and particularly preferably within ⁇ 2.0. If the a * value and the b * value in the L * a * b * color system are within ⁇ 30, both the conduction region a and the insulation region b are observed as colorless and transparent. The a * value and b * value in the L * a * b * color system are measured with a spectrophotometer.
  • the surface electric resistance of the conductive region a of the transparent conductor 100 is preferably 50 ⁇ / ⁇ or less, and more preferably 30 ⁇ / ⁇ or less.
  • the transparent conductor 100 having a surface electrical resistance value of 50 ⁇ / ⁇ or less in the conduction region can be applied to a transparent conductive panel for a capacitive touch panel.
  • the surface electrical resistance value of the conduction region a is adjusted by the thickness of the transparent metal film 3 and the like.
  • the surface electrical resistance value of the conduction region a is measured in accordance with, for example, JIS K7194, ASTM D257, or the like. It is also measured by a commercially available surface electrical resistivity meter.
  • the above-mentioned transparent conductor 100 includes various types of displays such as liquid crystal, plasma, organic electroluminescence, field emission, touch panels, mobile phones, electronic paper, various solar cells, various electroluminescence dimming elements, etc. It can be preferably used for substrates of various optoelectronic devices.
  • the surface of the transparent conductor 100 (for example, the surface opposite to the transparent substrate 1) may be bonded to another member via an adhesive layer or the like.
  • the equivalent admittance coordinates of the surface of the transparent conductor 100 and the admittance coordinates of the adhesive layer approximate each other. Thereby, reflection at the interface between the transparent conductor 100 and the adhesive layer is suppressed.
  • the admittance coordinates of the surface of the transparent conductor 100 and the admittance coordinates of air are preferably approximated. Thereby, reflection of light at the interface between the transparent conductor 100 and air is suppressed.
  • Example 1 A first high refractive index layer (41 nm) / underlayer (0.1 nm) / transparent metal film (8.2 nm) / second high refractive index layer (41 nm) on a transparent substrate made of cycloolefin polymer by the following method. ) In order. Thereafter, the laminate was patterned by the following method. The thickness of each layer is described in J. A. Woollam Co. Inc. The measurement was made with a VB-250 VASE ellipsometer manufactured by the manufacturer. However, the average thickness of the underlayer was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
  • FIG. 4A shows an admittance locus of the obtained transparent conductor at a wavelength of 570 nm
  • FIG. 4B shows spectral characteristics of the transparent conductor.
  • L-430S-FHS manufactured by Anelva is used, and Ar is 20 sccm, sputtering pressure is 0.5 Pa, room temperature, target-side power is 50 W, and deposition rate is 0.4 ⁇ / s. Sputtered.
  • the target-substrate distance was 86 mm.
  • Transparent metal film Using a counter sputtering machine manufactured by FTS Corporation, Ag was counter sputtered at an Ar of 20 sccm, a sputtering pressure of 0.5 Pa, a room temperature, a target power of 150 W, and a film formation rate of 14 K / s.
  • the target-substrate distance was 90 mm.
  • the plasmon absorption rate of the obtained transparent metal film was 10% or less over a wavelength range of 400 nm to 800 nm.
  • a second high refractive index layer made of ZnS was formed on the transparent metal film in the same manner as the first high refractive index layer.
  • the refractive index of light with a wavelength of 570 nm of ZnS was 2.37, and the refractive index of light with a wavelength of 570 nm of the second high refractive index layer was also 2.37.
  • a resist layer is formed in a pattern on the obtained laminate, and the first high-refractive index layer, the underlayer, the transparent metal film, and the second high-refractive index layer are formed in the pattern shown in FIG. a) and a line-shaped insulating region b separating the same), and patterned with an ITO etching solution (produced by Hayashi Junyaku). Only the transparent substrate was included in the insulating region. The width of the line-shaped insulating region b was 16 ⁇ m.
  • Example 2 A first high refractive index layer (40 nm) / transparent metal film (8 nm) / second high refractive index layer (44 nm) were sequentially laminated on a Konica Minolta TAC film (transparent substrate).
  • the first high refractive index layer and the second high refractive index layer were formed in the same manner as in Example 1.
  • the transparent metal film was formed in the same manner as in Example 1 except that the target for film formation was an Ag alloy (Ag-Bi (manufactured by Kobelco)).
  • the obtained laminate was patterned in the same manner as in Example 1.
  • FIG. 6A shows the admittance locus of the obtained transparent conductor at a wavelength of 570 nm
  • FIG. 6B shows the spectral characteristics of the transparent conductor.
  • Example 3 A first high refractive index layer (36 nm) / transparent metal film (10 nm) / second high refractive index layer (36 nm) were laminated in this order on a transparent substrate made of Toyobo PET (Cosmo Shine A4300, thickness 50 ⁇ m).
  • the first high refractive index layer and the second high refractive index layer were formed in the same manner as in Example 1.
  • the transparent metal film was formed in the same manner as in Example 1 except that the target for film formation was an Ag alloy (Ag—Nd—Bi—Au (manufactured by Kobelco)).
  • the obtained laminate was patterned in the same manner as in Example 1.
  • FIG. 7A shows the admittance locus of the obtained transparent conductor at a wavelength of 570 nm
  • FIG. 7B shows the spectral characteristics of the transparent conductor.
  • Example 4 A first high refractive index layer (45 nm) / underlayer (0.2 nm) / transparent metal film (5.5 nm) / second high refractive index layer (47 nm) were laminated in this order on a transparent substrate made of polycarbonate.
  • the first high refractive index layer and the second high refractive index layer were formed in the same manner as in Example 1.
  • the underlayer was formed by the following method.
  • the transparent metal film was formed by the same method as in Example 1 except that the target for film formation was an Ag alloy (APC-TR (manufactured by Furuya Metal Co., Ltd.)).
  • the obtained laminate was patterned in the same manner as in Example 1.
  • An admittance locus of the obtained transparent conductor at a wavelength of 570 nm is shown in FIG. 8A, and a spectral characteristic of the transparent conductor is shown in FIG. 8B.
  • Example 5 A first high refractive index layer (36 nm) / transparent metal film (10 nm) / second high refractive index layer (36 nm) were laminated in this order on a transparent substrate made of Toyobo PET (Cosmo Shine A4300, thickness 50 ⁇ m). The first high refractive index layer, the transparent metal film, and the second high refractive index layer were formed in the same manner as in Example 1. The obtained laminate was patterned in the same manner as in Example 1. The admittance locus of the obtained transparent conductor at a wavelength of 570 nm is shown in FIG. 9A, and the spectral characteristics of the transparent conductor are shown in FIG. 9B.
  • Example 6 A first high refractive index layer (47 nm) / transparent metal film (10 nm) / second high refractive index layer (42 nm) were laminated in this order on a transparent substrate made of Toyobo PET (Cosmo Shine A4300, thickness 50 ⁇ m). The first high refractive index layer, the transparent metal film, and the second high refractive index layer were formed in the same manner as in Example 1. The obtained laminate was patterned in the same manner as in Example 1.
  • FIG. 10A shows the admittance locus of the obtained transparent conductor at a wavelength of 570 nm
  • FIG. 10B shows the spectral characteristics of the transparent conductor.
  • Example 7 A first high refractive index layer (52 nm) / underlayer (0.1 nm) / transparent metal film (5.8 nm) / second high refractive index layer (34 nm) were laminated in this order on a transparent substrate made of a cycloolefin polymer. .
  • the first high refractive index layer was formed by the following method.
  • the underlayer was formed by the same method as in Example 4.
  • the transparent metal film was formed in the same manner as in Example 1 except that the target for film formation was an Ag alloy (Ag—Nd—Bi—Au (manufactured by Kobelco)).
  • the second high refractive index layer was formed in the same manner as in Example 1.
  • the obtained laminate was patterned in the same manner as in Example 1.
  • FIG. 11A shows an admittance locus of the obtained transparent conductor at a wavelength of 570 nm
  • FIG. 11B shows spectral characteristics of the transparent conductor.
  • Example 8 On the TAC film (transparent substrate) manufactured by Konica Minolta, the first high refractive index layer (43 nm) / underlayer (0.1 nm) / transparent metal film (7.6 nm) / second high refractive index layer (36 nm) in this order. Laminated.
  • the first high refractive index layer was formed by the following method.
  • the underlayer was formed by the same method as in Example 4.
  • the transparent metal film was formed in the same manner as in Example 1 except that the target for film formation was an Ag alloy (Ag—Nd—Bi—Au (manufactured by Kobelco)).
  • the second high refractive index layer was formed in the same manner as in Example 1.
  • the obtained laminate was patterned in the same manner as in Example 1.
  • FIG. 12A shows the admittance locus of the obtained transparent conductor at a wavelength of 570 nm
  • FIG. 12B shows the spectral characteristics of the transparent conductor.
  • Example 9 On a transparent substrate made of Toyobo PET (Cosmo Shine A4300 thickness 50 ⁇ m), the first high refractive index layer (36 nm) / underlayer (0.1 nm) / transparent metal film (10 nm) / second high refractive index layer (36 nm) ) In order.
  • the first high refractive index layer was formed by the following method.
  • the underlayer was formed by the same method as in Example 4.
  • the transparent metal film and the second high refractive index layer were formed in the same manner as in Example 1.
  • the obtained laminate was patterned in the same manner as in Example 1.
  • FIG. 13A shows the admittance locus of the obtained transparent conductor at a wavelength of 570 nm
  • FIG. 13B shows the spectral characteristics of the transparent conductor.
  • Nb 2 O 5 was DC sputtered at 20 sccm Ar, 1 sccm O 2 , sputtering pressure 0.5 Pa, room temperature, target side power 150 W, deposition rate 1.2 ⁇ / s using L-430S-FHS manufactured by Anerva.
  • the target-substrate distance was 86 mm.
  • the refractive index of light with a wavelength of 570 nm of Nb 2 O 5 was 2.31, and the refractive index of light with a wavelength of 570 nm of the first high refractive index layer was also 2.31.
  • Example 10 A first high refractive index layer (48 nm) / underlayer (0.1 nm) / transparent metal film (7 nm) / second high refractive index layer (44 nm) were laminated in this order on a Konica Minolta TAC film (transparent substrate). .
  • the first high refractive index layer was formed by the following method.
  • the underlayer was formed by the same method as in Example 4.
  • the transparent metal film and the second high refractive index layer were formed in the same manner as in Example 1.
  • the obtained laminate was patterned in the same manner as in Example 1.
  • FIG. 14A shows the admittance locus of the obtained transparent conductor at a wavelength of 570 nm
  • FIG. 14B shows the spectral characteristics of the transparent conductor.
  • Example 11 On a transparent substrate made of Toyobo PET (Cosmo Shine A4300 thickness 50 ⁇ m), first high refractive index layer (45 nm) / underlayer (0.1 nm) / transparent metal film (6.7 nm) / second high refractive index layer (42 nm) were laminated in order.
  • the first high refractive index layer was formed by the following method.
  • the underlayer was formed by the same method as in Example 4.
  • the transparent metal film and the second high refractive index layer were formed in the same manner as in Example 1.
  • the obtained laminate was patterned in the same manner as in Example 1.
  • An admittance locus of the obtained transparent conductor at a wavelength of 570 nm is shown in FIG. 15A, and a spectral characteristic of the transparent conductor is shown in FIG. 15B.
  • Example 12 A first high refractive index layer (47 nm) / underlayer (0.1 nm) / transparent metal film (9 nm) / second high refractive index layer (42 nm) were laminated in this order on a transparent substrate made of a cycloolefin polymer.
  • the first high refractive index layer, the underlayer, the transparent metal film, and the second high refractive index layer were formed in the same manner as in Example 1.
  • FIG. 16A shows the admittance locus of the obtained transparent conductor at a wavelength of 570 nm
  • FIG. 16B shows the spectral characteristics of the transparent conductor.
  • Example 13 On a transparent substrate made of polycarbonate, a first high refractive index layer (34 nm) / transparent metal film (10 nm) / second high refractive index layer (24 nm) / low refractive index layer (35 nm) / third high refractive index layer ( 10 nm) in order.
  • the first high refractive index layer, the transparent metal film, and the second high refractive index layer were formed in the same manner as in Example 1.
  • the low refractive index layer and the third high refractive index layer were formed by the following method.
  • FIG. 17A shows the admittance locus of the obtained transparent conductor at a wavelength of 570 nm
  • FIG. 17B shows the spectral characteristics of the transparent conductor.
  • Bi 2 O 3 was RF-sputtered using Ar-Leva L-430S-FHS with Ar 20 sccm, O 2 1 sccm, sputtering pressure 0.5 Pa, room temperature and target-side power 150 W.
  • the target-substrate distance was 86 mm.
  • the refractive index of light with a wavelength of 570 nm of Bi 2 O 3 was 1.91.
  • Example 14 On a transparent substrate made of Toyobo PET (Cosmo Shine A4300 thickness 50 ⁇ m), first high refractive index layer (43 nm) / underlayer (0.1 nm) / transparent metal film (6.5 nm) / second high refractive index layer (15 nm) / low refractive index layer (45 nm) / third high refractive index layer (10 nm) were laminated in this order.
  • the first high refractive index layer was formed in the same manner as in Example 7.
  • the second high refractive index layer and the third high refractive index layer were formed in the same manner as the first high refractive index layer in Example 1, respectively.
  • the transparent metal film was formed in the same manner as in Example 2.
  • the underlayer was formed in the same manner as in Example 4.
  • the low refractive index layer was formed in the same manner as in Example 13.
  • FIG. 18A shows an admittance locus of the obtained transparent conductor at a wavelength of 570 nm
  • FIG. 18B shows spectral characteristics of the transparent conductor.
  • Example 15 On a transparent substrate made of Toyobo PET (Cosmo Shine A4300 thickness 50 ⁇ m), the first high refractive index layer (45 nm) / underlayer (0.1 nm) / transparent metal film (9 nm) / second high refractive index layer (41 nm ) In order.
  • the first high refractive index layer was formed in the same manner as in Example 8.
  • the underlayer was formed in the same manner as in Example 4.
  • the transparent metal film and the second high refractive index layer were formed in the same manner as in Example 1.
  • FIG. 19A shows the admittance locus of the obtained transparent conductor at a wavelength of 570 nm
  • FIG. 19B shows the spectral characteristics of the transparent conductor.
  • Example 16 A first high refractive index layer (40 nm) / transparent metal film (7.5 nm) / second high refractive index layer (40 nm) were laminated in this order on a transparent substrate made of Toyobo PET (Cosmo Shine A4300 thickness 50 ⁇ m).
  • the first high refractive index layer was formed by the following method.
  • the transparent metal film and the second high refractive index layer were formed in the same manner as in Example 1.
  • FIG. 20A shows the admittance locus of the obtained transparent conductor at a wavelength of 570 nm
  • FIG. 20B shows the spectral characteristics of the transparent conductor.
  • the ion beam was irradiated at a current of 500 mA, a voltage of 500 V, and an acceleration voltage of 400 V.
  • O 2 gas: 50 sccm and Ar gas: 8 sccm were introduced.
  • the refractive index of light with a wavelength of 570 nm of TiO 2 was 2.35, and the refractive index of light with a wavelength of 570 nm of the first high refractive index layer was also 2.35.
  • FIG. 21A shows the admittance locus of the obtained transparent conductor at a wavelength of 570 nm
  • FIG. 21B shows the spectral characteristics of the transparent conductor.
  • first high refractive index layer and second high refractive index layer films made of ZnS were formed by resistance heating using a BMC-800T vapor deposition machine manufactured by SYNCHRON, respectively.
  • the input current value at this time was 210 A, and the film formation rate was 5 ⁇ / s.
  • a silver film having a thickness of 12 nm was formed by resistance heating using a BMC-800T vapor deposition machine manufactured by SYNCHRON.
  • the input current value at this time was 210 A, and the film formation rate was 5 ⁇ / s.
  • a first high refractive index layer (27.7 nm) / transparent metal film (7.3 nm) / second high refractive index layer (36 nm) are laminated in this order on a transparent substrate made of Toyobo PET (Cosmo Shine A4300 thickness 50 ⁇ m). did.
  • the first high refractive index layer, the transparent metal film, and the second high refractive index layer were formed by the following methods, respectively.
  • the admittance locus of the obtained transparent conductor at a wavelength of 570 nm is shown in FIG. 22A, and the spectral characteristics of the transparent conductor are shown in FIG. 22B.
  • Nb 2 O 5 was RF-sputtered using Arnelva L-430S-FHS at Ar 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 0.74 ⁇ / s.
  • the target-substrate distance was 86 mm.
  • the refractive index of light with a wavelength of 570 nm of Nb 2 O 5 is 2.31, but the refractive index of light with a wavelength of 570 nm of the first high refractive index layer is 2.35.
  • IZO Metal for forming second high refractive index layer
  • IZO was RF sputtered at Ar 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 2.2 L / s.
  • the target-substrate distance was 86 mm.
  • the refractive index of light with a wavelength of 570 nm of IZO is 2.05, but the refractive index of light with a wavelength of 570 nm of the second high refractive index layer is 1.98.
  • the target was formed in the same manner as the second high refractive index layer of Comparative Example 3 except that the target was made of a material (ICO) containing 10 atomic% of cerium in indium.
  • the refractive index of light with a wavelength of 570 nm of ICO was 2.2, and the refractive indexes of light with a wavelength of 570 nm of the first high refractive index layer and the second high refractive index layer were also 2.2.
  • Fluorine-based material manufactured by Shin-Etsu Chemical Co., Ltd .: KP801M was vapor-deposited by resistance heating with a Gener 1300 manufactured by Optorun at 190 mA and a film formation rate of 10 kg / s.
  • a first high refractive index layer (40 nm) / transparent metal film (9 nm) / second high refractive index layer (40 nm) were laminated in this order on a transparent substrate made of Toyobo PET (Cosmo Shine A4300 thickness 50 ⁇ m).
  • the first high refractive index layer and the second high refractive index layer were formed in the same manner as the first high refractive index layer of Example 15, respectively.
  • the transparent metal film was formed by the following method.
  • a first high refractive index layer (50 nm) / transparent metal film (10 nm) / second high refractive index layer (50 nm) are laminated in this order on a transparent substrate made of Corning glass substrate (# 7059, thickness 1.1 mmt). did.
  • the first high refractive index layer, the transparent metal film, and the second high refractive index layer were formed by the following methods, respectively.
  • An oxide sintered body of Ga and In was DC sputtered at an electric power density of 2.2 W / cm 2 in an atmosphere of 0.6 Pa of Ar gas mixed with O 2 gas.
  • the ratio of O 2 gas to be introduced was 8 to 12% by volume.
  • measurement light for example, light having a wavelength of 450 nm to 800 nm
  • the light transmittance and reflectance were measured at U4100.
  • the absorptance was calculated from a formula of 100 ⁇ (transmittance + reflectance).
  • the transparent conductors of Examples 12 to 16, Comparative Example 1 and Comparative Example 3 were used in contact with air. Therefore, measurement light (for example, light having a wavelength of 450 nm to 800 nm) is incident on the conductive region without bonding an alkali-free glass substrate on the transparent conductor, and light is emitted by Hitachi, Ltd .: spectrophotometer U4100. The transmittance and reflectance were measured. The absorptance was calculated from a formula of 100 ⁇ (transmittance + reflectance). The measurement light was incident from the second high refractive index layer side.
  • measurement light for example, light having a wavelength of 450 nm to 800 nm
  • the transmittance and reflectance were measured.
  • the absorptance was calculated from a formula of 100 ⁇ (transmittance + reflectance).
  • the measurement light was incident from the second high refractive index layer side.
  • ⁇ R in the table represents the absolute value of the difference between the luminous efficiency of the conductive area and the luminous efficiency of the insulating area.
  • optical admittance The optical admittance of the transparent conductor obtained by the Example and the comparative example was specified.
  • the optical admittance of wavelength 570nm of the first high refractive index layer side of the surface of the transparent metal Y1 x 1 + iy 1
  • the optical admittance of wavelength 570nm of the second high refractive index layer side of the surface of the transparent metal film Y2 x
  • the values of (x 1 , y 1 ) and (x 2 , y 2 ) when 2 + iy 2 are set are shown in Table 2.
  • Table 2 shows the values of (x E , y E ) and (x sub , y sub ), respectively.
  • Table 2 shows values of ((x sub ⁇ x env ) / (x sub + x env )) 2 ⁇ ((x E ⁇ x env ) / (x E + x env )) 2
  • the optical admittance of the layer contained in the transparent conductor was calculated by the thin film design software Essential Macleod Ver.9.4.375. Note that the thickness d, refractive index n, and absorption coefficient k of each layer necessary for the calculation are as follows. A. Woollam Co. Inc. The measurement was made with a VB-250 VASE ellipsometer manufactured by the manufacturer.
  • the transparent conductors (Examples 1 to 16) in which a ZnS film having a thickness of 15 nm or more was laminated on the transparent metal film did not corrode even in a humid heat environment.
  • the transparent metal film was a sputtered film
  • the surface electrical resistance was 10 ⁇ / ⁇ even when the thickness was 10 nm or less.
  • the transparent conductor had high light transmittance and the surface electrical resistance was 10 ⁇ / ⁇ . It is assumed that plasmon absorption hardly occurred in these transparent metal films.
  • Comparative Example 2 in which a transparent metal film was produced by a vapor deposition method, a continuous film was not obtained and electricity was not conducted. Further, although the film became a continuous film when the thickness was 12 nm (Comparative Example 1), the average reflectance of light having a wavelength of 400 to 1000 nm was less than 80%. It is inferred that the transmittance was not sufficiently increased because of the inherent reflection of metal.
  • the transparent metal film was corroded (Comparative Examples 3 to 6).
  • the transparent conductor obtained by the present invention is less susceptible to corrosion of the transparent metal film even in a humid heat environment, and has a low surface resistance and high light transmittance. Therefore, it is preferably used in various optoelectronic devices such as various types of displays, touch panels, mobile phones, electronic paper, various solar cells, various electroluminescence light control elements, and the like.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Non-Insulated Conductors (AREA)
  • Laminated Bodies (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Le problème décrit par la présente invention est de produire un corps conducteur transparent dans lequel un motif d'une région conductrice ne soit pas facilement visible, une valeur de résistance électrique de surface de la région conductrice soit basse, et la souplesse soit grande. Pour résoudre le problème, la solution de la présente invention porte sur un corps conducteur transparent qui comprend, dans l'ordre suivant: un substrat transparent; une première couche à indice de réfraction élevé contenant un matériau diélectrique ou un matériau semi-conducteur oxyde, qui possède un indice de réfraction, relativement à de la lumière ayant une longueur d'onde de 570 nm, supérieur à un indice de réfraction du substrat transparent relativement à la lumière ayant une longueur d'onde de 570 nm; un film métallique transparent ayant une épaisseur de 10 nm ou moins; et une seconde couche à indice de réfraction élevé, qui possède une épaisseur de 15 nm ou plus et qui contient ZnS. Le corps conducteur transparent possède un coefficient de transmission moyen de 80% ou plus relativement à de la lumière ayant une longueur d'onde de 400-1000 nm.
PCT/JP2014/004334 2013-08-23 2014-08-22 Corps conducteur transparent WO2015025525A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015532715A JPWO2015025525A1 (ja) 2013-08-23 2014-08-22 透明導電体

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-173347 2013-08-23
JP2013173347 2013-08-23

Publications (1)

Publication Number Publication Date
WO2015025525A1 true WO2015025525A1 (fr) 2015-02-26

Family

ID=52483319

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2014/004334 WO2015025525A1 (fr) 2013-08-23 2014-08-22 Corps conducteur transparent

Country Status (2)

Country Link
JP (1) JPWO2015025525A1 (fr)
WO (1) WO2015025525A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170110043A (ko) * 2016-03-22 2017-10-10 아라까와 가가꾸 고교 가부시끼가이샤 적층체의 제조방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06278244A (ja) * 1993-01-29 1994-10-04 Mitsui Toatsu Chem Inc 積層体
JP2000106044A (ja) * 1998-09-30 2000-04-11 Nitto Denko Corp 透明導電性フィルムの表面抵抗低下方法
JP2012042726A (ja) * 2010-08-19 2012-03-01 Nippon Shinku Kogaku Kk テラヘルツ帯光学素子
WO2014167835A1 (fr) * 2013-04-08 2014-10-16 コニカミノルタ株式会社 Conducteur transparent

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008171637A (ja) * 2007-01-10 2008-07-24 Fuji Electric Holdings Co Ltd 透明導電膜積層体、該透明導電膜積層体を用いた有機ｅｌ素子、並びに、これらの製造方法
JP2010198921A (ja) * 2009-02-25 2010-09-09 Fuji Electric Holdings Co Ltd 透明導電膜積層体を用いた有機ｅｌ素子、並びに、これらの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06278244A (ja) * 1993-01-29 1994-10-04 Mitsui Toatsu Chem Inc 積層体
JP2000106044A (ja) * 1998-09-30 2000-04-11 Nitto Denko Corp 透明導電性フィルムの表面抵抗低下方法
JP2012042726A (ja) * 2010-08-19 2012-03-01 Nippon Shinku Kogaku Kk テラヘルツ帯光学素子
WO2014167835A1 (fr) * 2013-04-08 2014-10-16 コニカミノルタ株式会社 Conducteur transparent

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170110043A (ko) * 2016-03-22 2017-10-10 아라까와 가가꾸 고교 가부시끼가이샤 적층체의 제조방법
KR102268064B1 (ko) * 2016-03-22 2021-06-21 아라까와 가가꾸 고교 가부시끼가이샤 적층체의 제조방법

Also Published As

Publication number Publication date
JPWO2015025525A1 (ja) 2017-03-02

Similar Documents

Publication Publication Date Title
JP6314463B2 (ja) 透明導電体
JP5549216B2 (ja) 透明導電性積層体およびその製造方法ならびにタッチパネル
JP6292225B2 (ja) 透明導電体
JP2011194679A (ja) 透明導電性積層体およびその製造方法ならびにタッチパネル
JP4349794B2 (ja) 導電性を有する多層反射防止膜付透明基板の製造方法
JP6319302B2 (ja) 透明導電体及びその製造方法
JP2011175900A (ja) 透明導電性積層体及びその製造方法
WO2015068738A1 (fr) Corps conducteur transparent
JP6344095B2 (ja) 透明導電体及びタッチパネル
WO2015087895A1 (fr) Corps conducteur transparent
JP6206262B2 (ja) 透明導電体、その製造方法及び導電性ペースト
WO2015025525A1 (fr) Corps conducteur transparent
JP2015219690A (ja) 透明導電デバイス、及び、タッチパネル
WO2015125558A1 (fr) Procédé de fabrication de corps électroconducteur transparent et corps électroconducteur
WO2015053371A1 (fr) Conducteur transparent
WO2014196460A1 (fr) Conducteur transparent et son procédé de production
JP2016146052A (ja) 透明導電体及びこれを含むタッチパネル
JPWO2016052158A1 (ja) 透明導電体及びこれを含むタッチパネル
WO2015011928A1 (fr) Procédé de production d'un corps conducteur transparent
WO2014181538A1 (fr) Conducteur transparent et son procédé de production
WO2015151677A1 (fr) Film conducteur transparent et procédé de fabrication d'un élément conducteur transparent
WO2014188683A1 (fr) Substrat d'electrode de panneau tactile, panneau tactile comprenant un substrat d'electrode de panneau tactile et panneau d'affichage
JP2016177940A (ja) 透明導電体の製造方法
WO2015133007A1 (fr) Procédé de fabrication de conducteur transparent
WO2015125677A1 (fr) Conducteur transparent

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14837244

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2015532715

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 14837244

Country of ref document: EP

Kind code of ref document: A1