WO2014167835A1 - Conducteur transparent - Google Patents

Conducteur transparent Download PDF

Info

Publication number
WO2014167835A1
WO2014167835A1 PCT/JP2014/002000 JP2014002000W WO2014167835A1 WO 2014167835 A1 WO2014167835 A1 WO 2014167835A1 JP 2014002000 W JP2014002000 W JP 2014002000W WO 2014167835 A1 WO2014167835 A1 WO 2014167835A1
Authority
WO
WIPO (PCT)
Prior art keywords
refractive index
index layer
transparent
wavelength
high refractive
Prior art date
Application number
PCT/JP2014/002000
Other languages
English (en)
Japanese (ja)
Inventor
一成 多田
Original Assignee
コニカミノルタ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by コニカミノルタ株式会社 filed Critical コニカミノルタ株式会社
Priority to JP2015511108A priority Critical patent/JP6292225B2/ja
Publication of WO2014167835A1 publication Critical patent/WO2014167835A1/fr

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/40—Properties of the layers or laminate having particular optical properties
    • B32B2307/414—Translucent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
    • B32B2457/208—Touch screens
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

Definitions

  • the present invention relates to a transparent conductor including a metal pattern.
  • transparent conductive films have been used in various materials such as electrode materials for display devices such as liquid crystal displays, plasma displays, inorganic and organic EL (electroluminescence) displays, electrode materials for inorganic and organic EL elements, touch panel materials, and solar cell materials. in use.
  • electrode materials for display devices such as liquid crystal displays, plasma displays, inorganic and organic EL (electroluminescence) displays, electrode materials for inorganic and organic EL elements, touch panel materials, and solar cell materials. in use.
  • metals such as Au, Ag, Pt, Cu, Rh, Pd, Al, and Cr, In 2 O 3 , CdO, CdIn 2 O 4 , Cd 2 SnO 4 , and TiO 2 are used.
  • SnO 2 , ZnO, ITO (indium tin oxide) and other oxide semiconductors are known.
  • the touch panel is usually provided with a transparent conductive film in which conductive regions are partitioned in a grid pattern by a line-shaped insulating pattern.
  • a transparent conductive film is disposed in the conduction region.
  • the light transmittance of the insulating region is different from the light transmittance of the conductive region. Therefore, there is a problem that the pattern of the conduction region is easily visible.
  • Patent Document 1 a transparent conductor in which the transparent conductive film is made of an ITO film having high transparency has been proposed.
  • Patent Document 2 A transparent conductor in which a high refractive index dielectric layer and a low refractive index dielectric layer are repeatedly laminated on an ITO film has also been proposed (Patent Document 2).
  • Non-patent Document 1 a transparent conductor in which a niobium oxide (Nb 2 O 5 ) film, an Ag thin film, and an IZO (indium oxide / zinc oxide) film are stacked has also been proposed (Non-patent Document 1).
  • An object of the present invention is to provide a transparent conductor that is difficult to visually recognize a pattern of a conduction region, has a low surface electric resistance value of the conduction region, and has high flexibility.
  • the first of the present invention relates to the following transparent conductor.
  • a transparent substrate a first high refractive index layer containing a dielectric material or an oxide semiconductor material having a refractive index of light having a wavelength of 570 nm higher than that of light having a wavelength of 570 nm of the transparent substrate, and a transparent metal film
  • a second high refractive index layer including a dielectric material or an oxide semiconductor material having a refractive index of light having a wavelength of 570 nm higher than that of light having a wavelength of 570 nm of the transparent substrate in this order.
  • Y b x b + iy b , ((x a -x b ) 2 + (y a -y b ) 2 )
  • a transparent conductor satisfying 0.5 ⁇ 0.5.
  • the transparent metal film has a thickness of 15 nm or less, and an average absorptance of light having a wavelength of 400 nm to 800 nm of the laminate in the pattern region of the metal pattern is 10% or less.
  • the transparent conductor according to any one of [1] to [3].
  • the refractive index of light having a wavelength of 570 nm of the dielectric material or oxide semiconductor material included in the first high refractive index layer, and the wavelength of 570 nm of the dielectric material or oxide semiconductor material included in the second high refractive index layer.
  • the dielectric material or oxide semiconductor material included in the first high refractive index layer and the second high refractive index layer has a refractive index of 1.8 to 2.5, [1] to [8] The transparent conductor in any one.
  • the dielectric material or oxide semiconductor material included in the first high refractive index layer and the second high refractive index layer is TiO 2 , ITO, ZnO, ZnS, Nb 2 O 5 , ZrO 2 , CeO 2 , One or more selected from the group consisting of Ta 2 O 5 , Ti 3 O 5 , Ti 4 O 7 , Ti 2 O 3 , TiO, SnO 2 , La 2 Ti 2 O 7 , IZO, AZO, GZO, ATO, and ICO.
  • the transparent conductor according to any one of [1] to [9].
  • the laminate has a thickness of 0.1 to 15 nm between the first high refractive index layer and the transparent metal film, or between the transparent metal film and the second high refractive index layer.
  • the low refractive index layer further includes a low refractive index layer, the refractive index of light having a wavelength of 570 nm of the dielectric material or oxide semiconductor material included in the first high refractive index layer and the second high refractive index layer.
  • the transparent conductor according to any one of [1] to [10], comprising a dielectric material or an oxide semiconductor material having a low refractive index of light having a wavelength of 570 nm.
  • the dielectric material or the oxide semiconductor material included in the low refractive index layer is MgF 2 , SiO 2 , CaF 2 , CeF 3 , LaF 3 , LiF, NaF, NdF 3 , Na 3 AlF 6 , Al 2 O. 3 , the transparent conductor according to [11] or [12], which is one or more selected from the group consisting of MgO and ThO 2 .
  • FIG. 3A is a schematic cross-sectional view showing a layer structure of a transparent conductor produced in Example 1.
  • FIG. 3B is a graph showing the admittance locus of the transparent conductor produced in Example 1 at a wavelength of 570 nm.
  • FIG. 3C is a graph showing the spectral characteristics of the transparent conductor produced in Example 1.
  • FIG. 4A is a graph showing an admittance locus at a wavelength of 570 nm of a transparent conductor having a transparent substrate / transparent metal film / high refractive index layer.
  • FIG. 4B is a graph showing admittance trajectories of a transparent conductor / transparent metal film / high refractive index layer having a wavelength of 450 nm, a wavelength of 570 nm, and a wavelength of 700 nm.
  • FIG. 5A is a graph showing an admittance locus of the transparent conductor produced in Example 2 at a wavelength of 570 nm.
  • FIG. 5B is a graph showing the spectral characteristics of the transparent conductor produced in Example 2.
  • 6A is a graph showing an admittance locus of a wavelength of 570 nm of the transparent conductor produced in Example 3.
  • FIG. 6B is a graph showing the spectral characteristics of the transparent conductor produced in Example 3.
  • FIG. 7A is a graph showing an admittance locus of a wavelength of 570 nm of the transparent conductor produced in Example 4.
  • FIG. 7B is a graph showing the spectral characteristics of the transparent conductor produced in Example 4.
  • FIG. 8A is a graph showing an admittance locus of a wavelength of 570 nm of the transparent conductor produced in Example 5.
  • FIG. 8B is a graph showing the spectral characteristics of the transparent conductor produced in Example 5.
  • FIG. 9A is a graph showing an admittance locus of a wavelength of 570 nm of the transparent conductor produced in Example 6.
  • FIG. 9B is a graph showing the spectral characteristics of the transparent conductor produced in Example 6.
  • FIG. 10A is a graph showing an admittance locus of a wavelength of 570 nm of the transparent conductor produced in Example 7.
  • FIG. 10B is a graph showing the spectral characteristics of the transparent conductor produced in Example 7.
  • FIG. 11A is a graph showing the admittance locus of the transparent conductor produced in Example 8 at a wavelength of 570 nm.
  • FIG. 11B is a graph showing the spectral characteristics of the transparent conductor produced in Example 8.
  • 12A is a graph showing an admittance locus of the transparent conductor produced in Example 9 at a wavelength of 570 nm.
  • FIG. 12B is a graph showing the spectral characteristics of the transparent conductor produced in Example 9.
  • FIG. 10A is a graph showing an admittance locus of a wavelength of 570 nm of the transparent conductor produced in Example 7.
  • FIG. 10B is a graph showing the spectral characteristics of the transparent conductor produced in Example 7.
  • FIG. 11A is a graph showing the
  • FIG. 13A is a graph showing the admittance locus of the transparent conductor produced in Example 10 at a wavelength of 570 nm.
  • FIG. 13B is a graph showing the spectral characteristics of the transparent conductor produced in Example 10.
  • FIG. 14A is a graph showing an admittance locus of the transparent conductor produced in Example 11 at a wavelength of 570 nm.
  • 14B is a graph showing the spectral characteristics of the transparent conductor produced in Example 11.
  • FIG. It is a schematic diagram which shows an example of the pattern which consists of a conduction area
  • FIG. 16A is a graph showing an admittance locus of a wavelength of 570 nm of the transparent conductor produced in Example 12.
  • FIG. 16A is a graph showing an admittance locus of a wavelength of 570 nm of the transparent conductor produced in Example 12.
  • FIG. 16B is a graph showing the spectral characteristics of the transparent conductor produced in Example 12.
  • FIG. 17A is a graph showing an admittance locus of the transparent conductor produced in Example 13 at a wavelength of 570 nm.
  • FIG. 17B is a graph showing the spectral characteristics of the transparent conductor produced in Example 13.
  • the transparent conductor 100 of the present invention has a transparent substrate 1 / first high refractive index layer 2 / transparent metal film 3 / second high refractive index layer 4 laminated in this order. It consists of a laminate. In the laminate, the transparent metal film 3 is patterned into a desired shape.
  • the first high refractive index layer 2 and the second high refractive index layer 4 may be laminated on the entire surface of the transparent substrate 1 or may be laminated only on a part thereof. From the viewpoint of making it difficult to visually recognize the pattern of the conduction region a, the first high refractive index layer 2 and the second high refractive index layer 4 are preferably patterned in the same shape as the transparent metal film 3.
  • the transparent conductor 100 (laminated body) of the present invention may include layers other than those described above.
  • the transparent conductor 100 is interposed between the transparent substrate 1 and the first high refractive index layer 2.
  • the underlayer 5 for adjusting the optical admittance of the transparent conductor 100 may be included.
  • the plasmon of the transparent metal film 3 is between the transparent metal film 3 and the first high refractive index layer 2 or between the transparent metal film 3 and the second high refractive index layer 4.
  • a low refractive index layer 6 for suppressing absorption may be included.
  • each layer formed on the transparent substrate 1 is a layer made of an inorganic material.
  • the transparent conductor of the present invention is a laminated body from the transparent substrate to the second high refractive index layer.
  • the pattern region of the metal pattern is a region where electricity is conducted (hereinafter also referred to as “conduction region”).
  • the non-pattern region of the metal pattern that is, the region not including the transparent metal film 3 is the insulating region. That is, in the transparent conductor 100 of FIG. 1, the region a where the transparent substrate 1, the first high refractive index layer 2, the transparent metal film 3, and the second high refractive index layer 4 are laminated is a conduction region; A region b consisting only of the substrate 1 is an insulating region.
  • the region a where the transparent substrate 1, the underlayer 5, the first high refractive index layer 2, the transparent metal film 3, and the second high refractive index layer 4 are laminated is a conduction region.
  • the region b where the transparent substrate 1 and the underlayer 5 are laminated is an insulating region. As will be described later, it is preferable that only the transparent substrate 1 is included in the insulating region b from the viewpoint of making it difficult to visually recognize the pattern of the conductive region a.
  • the pattern composed of the conductive region a and the insulating region b is appropriately selected according to the use of the transparent conductor 100.
  • the pattern includes a plurality of conductive regions a and line-shaped insulating regions b that divide the conductive regions a. sell.
  • the transparent conductive film is made of an ITO film having a high light transmittance, so that the pattern of the conductive region is hardly visible.
  • the film formation temperature cannot be sufficiently increased; a dense ITO film cannot be formed.
  • the surface electrical resistance of the transparent conductor tends to increase.
  • the film formation temperature can be sufficiently increased; a dense ITO film can be formed.
  • the transparent conductor containing a glass substrate has low flexibility, there exists a problem that the use of a transparent conductor is restrict
  • the transparent conductive film is made of the transparent metal film 3, and a dense film can be formed on the film substrate. Therefore, low surface electrical resistance and the flexibility of a transparent conductor are compatible. Further, in the transparent conductor according to the present invention, the light transmittance of the conductive region and the insulating region is approximated as described later. Therefore, it is difficult to visually recognize the pattern of the conduction region, and it can be applied to panel substrates of various display elements such as a touch panel, an organic EL element, and a solar battery.
  • the transparent substrate 1 included in the transparent conductor 100 can be the same as the transparent substrate of various display devices.
  • the transparent substrate is a glass substrate, cellulose ester resin (for example, triacetyl cellulose, diacetyl cellulose, acetylpropionyl cellulose, etc.), polycarbonate resin (for example, Panlite, Multilon (both manufactured by Teijin Ltd.)), cycloolefin resin (for example, Zeonor) (Nippon Zeon Co., Ltd.), Arton (JSR Co., Ltd.), Appel (Mitsui Chemicals Co., Ltd.), acrylic resin (for example, polymethyl methacrylate, "Acrylite (Mitsubishi Rayon Co., Ltd.), Sumipex (Sumitomo Chemical Co., Ltd.)”) , Polyimide, phenol resin, epoxy resin, polyphenylene ether (PPE) resin, polyester resin (eg, polyethylene
  • the transparent substrate 1 is a glass substrate, or a cellulose ester resin, a polyester resin (particularly polyethylene terephthalate), a triacetyl cellulose, a cycloolefin resin, a phenol resin, an epoxy resin, a polyphenylene ether (PPE) resin, a polyether sulfone.
  • ABS acrylonitrile butadiene styrene
  • AS acrylonitrile styrene
  • MBS methyl methacrylate butadiene styrene
  • polystyrene methacrylic resin
  • polyvinyl alcohol / EVOH ethylene vinyl alcohol resin
  • styrene block A film made of a copolymer resin is preferred.
  • the transparent substrate 1 preferably has high transparency to visible light; the average transmittance of light having a wavelength of 450 to 800 nm is preferably 70% or more, more preferably 80% or more, and 85% or more. More preferably it is. When the average light transmittance of the transparent substrate 1 is 70% or more, the light transmittance of the transparent conductor 100 is likely to be increased. Further, the average absorptance of light having a wavelength of 450 to 800 nm of the transparent substrate 1 is preferably 10% or less, more preferably 5% or less, and further preferably 3% or less.
  • the average transmittance is measured by making light incident from an angle inclined by 5 ° with respect to the normal line of the surface of the transparent substrate 1.
  • Average transmittance and average reflectance are measured with a spectrophotometer.
  • the refractive index of light having a wavelength of 570 nm of the transparent substrate 1 is preferably 1.40 to 1.95, more preferably 1.45 to 1.75, and still more preferably 1.45 to 1.70. .
  • the refractive index of the transparent substrate is usually determined by the material of the transparent substrate. The refractive index of the transparent substrate is measured with an ellipsometer.
  • the haze value of the transparent substrate 1 is preferably 0.01 to 2.5, more preferably 0.1 to 1.2.
  • the haze value of a transparent conductor can be suppressed as the haze value of a transparent substrate is 2.5 or less.
  • the haze value is measured with a haze meter.
  • the thickness of the transparent substrate 1 is preferably 1 ⁇ m to 20 mm, more preferably 10 ⁇ m to 2 mm.
  • the thickness of the transparent substrate is 1 ⁇ m or more, the strength of the transparent substrate 1 is increased, and it is difficult to crack or tear the first high refractive index layer 2 during production.
  • the thickness of the transparent substrate 1 is 20 mm or less, the flexibility of the transparent conductor 100 is sufficient.
  • the thickness of the apparatus using the transparent conductor 100 can be reduced.
  • the apparatus using the transparent conductor 100 can also be reduced in weight.
  • the first high refractive index layer 2 is a layer that mainly adjusts the optical admittance of the conductive region a of the transparent conductor 100.
  • the first high refractive index layer 2 may be disposed not only in the conductive region a of the transparent conductor 100 but also in the insulating region b.
  • the first high refractive index layer 2 is patterned in the same shape as the transparent metal film 3 from the viewpoint of making it difficult to visually recognize the pattern of the conductive region a; Preferably it is.
  • the first high refractive index layer 2 includes a dielectric material or an oxide semiconductor material having a refractive index higher than the refractive index of the transparent substrate 1 described above.
  • the refractive index of light having a wavelength of 570 nm of the dielectric material or oxide semiconductor material is preferably 0.1 to 1.1 larger than the refractive index of light having a wavelength of 570 nm of the transparent substrate 1, and is preferably 0.4 to 1.0. Larger is more preferable.
  • the specific refractive index of light having a wavelength of 570 nm of the dielectric material or oxide semiconductor material contained in the first high refractive index layer 2 is preferably larger than 1.5 and is 1.7 to 2.5. More preferably, it is 1.8 to 2.5.
  • the optical admittance of the conductive region a of the transparent conductor 100 is sufficiently adjusted by the first high refractive index layer 2.
  • the refractive index of the first high refractive index layer 2 is adjusted by the refractive index of the material included in the first high refractive index layer 2 and the density of the material included in the first high refractive index layer 2.
  • the dielectric material or oxide semiconductor material contained in the first high refractive index layer 2 may be an insulating material or a conductive material; be a metal oxide or metal sulfide Is preferred.
  • metal oxides or metal sulfides include TiO 2 , ITO (indium tin oxide), ZnO, ZnS, Nb 2 O 5 , ZrO 2 , CeO 2 , Ta 2 O 5 , Ti 3 O 5 , Ti 4 O.
  • the metal oxide or metal sulfide is preferably TiO 2 , ITO, ZnO, Nb 2 O 5 or ZnS from the viewpoint of refractive index and productivity.
  • the first high refractive index layer 2 may contain only one kind of the metal oxide or metal sulfide, or two or more kinds. Further, the first high refractive index layer 2 may contain a compound having a low refractive index (for example, a refractive index of light having a wavelength of 570 nm less than 1.8) within a range not impairing the effects of the present invention. Examples of such include a layer containing ZnS and SiO 2 .
  • the thickness of the first high refractive index layer 2 is preferably 10 to 150 nm, more preferably 20 to 80 nm.
  • the thickness of the first high refractive index layer 2 is 10 nm or more, the optical admittance of the conduction region a of the transparent conductor 100 is sufficiently adjusted by the first high refractive index layer 2.
  • the thickness of the first high refractive index layer 2 is 150 nm or less, the light transmittance of the region including the first high refractive index layer 2 is unlikely to decrease.
  • the thickness of the first high refractive index layer 2 is measured with an ellipsometer.
  • the first high refractive index layer 2 can be a layer formed by a general vapor deposition method such as a vacuum deposition method, a sputtering method, an ion plating method, a plasma CVD method, a thermal CVD method or the like. From the viewpoint of increasing the refractive index (density) of the first high refractive index layer, the first high refractive index layer is preferably a layer formed by electron beam evaporation or sputtering. In the case of the electron beam evaporation method, it is desirable to have assistance such as IAD (ion assist) in order to increase the film density.
  • IAD ion assist
  • the first high refractive index layer 2 may be a layer patterned by any method.
  • it may be a layer formed in a pattern by a vapor deposition method by placing a mask having a desired pattern on the deposition surface; a layer patterned by a known etching method. May be.
  • the transparent metal film 3 is a film for conducting electricity in a transparent conductor, and may be a film patterned into a desired shape.
  • the metal contained in the transparent metal film 3 is not particularly limited as long as it is a highly conductive metal, and may be, for example, silver, copper, gold, platinum group, titanium, chromium, or the like.
  • the transparent metal film may contain only one kind of these metals or two or more kinds. From the viewpoint of low plasmon absorption and low reflectance, the transparent metal film is preferably made of silver or an alloy containing 90 at% or more of silver.
  • the metal combined with silver can be zinc, gold, copper, palladium, aluminum, manganese, bismuth, neodymium, molybdenum, and the like.
  • the sulfidation resistance of the transparent metal film is enhanced.
  • salt resistance (NaCl) resistance increases.
  • silver and copper are combined, the oxidation resistance increases.
  • the plasmon absorption rate of the transparent metal film 3 is preferably 10% or less over the entire wavelength range of 400 nm to 800 nm.
  • the plasmon absorption rate of the transparent metal film 3 is more preferably 7% or less, and further preferably 5% or less. If there is a region having a large plasmon absorption rate in a part of the wavelength of 400 nm to 800 nm, the transmitted light of the conductive region a of the transparent conductor 100 is likely to be colored, and the pattern of the conductive region a is easily visible.
  • the plasmon absorption rate at a wavelength of 400 nm to 800 nm of the transparent metal film 3 is measured by the following procedure.
  • the thickness of the transparent metal film 3 is preferably 15 nm or less, more preferably 3 to 13 nm, and further preferably 7 to 12 nm.
  • the thickness of the transparent metal film 3 is 15 nm or less, more preferably 3 to 13 nm, and further preferably 7 to 12 nm.
  • the thickness of the transparent metal film 3 is 15 nm or less, as will be described later, the optical admittance is easily adjusted by the first high refractive index layer 2 and the second high refractive index layer 4, and the pattern of the conduction region a is It becomes difficult to see.
  • the thickness of the transparent metal film 3 is measured with an ellipsometer.
  • the transparent metal film 3 can be a layer formed by a general vapor deposition method. However, in order to obtain a film having a thickness of 15 nm or less and low plasmon absorption, a growth nucleus made of metal is used. A layer formed by a vapor deposition method is preferable. A preferred method for forming a transparent metal film will be described later.
  • the transparent metal film 3 may be a film patterned by any method.
  • it may be a film formed in a pattern by a vapor deposition method by placing a mask having a desired pattern on the deposition surface; a film patterned by a known etching method. May be.
  • the second high refractive index layer 4 is a layer that adjusts the optical admittance of the conductive region a of the transparent conductor 100.
  • the second high refractive index layer 4 may be disposed not only in the conductive region a of the transparent conductor 100 but also in the insulating region b.
  • the second high refractive index layer 4 is patterned in the same shape as the transparent metal film 3 from the viewpoint of making it difficult to visually recognize the pattern of the conductive region a; Preferably it is.
  • the second high refractive index layer 4 includes a dielectric material or an oxide semiconductor material having a refractive index higher than the refractive index of light having a wavelength of 570 nm of the transparent substrate 1.
  • the refractive index of light having a wavelength of 570 nm of the dielectric material or oxide semiconductor material is preferably 0.1 to 1.1 larger than the refractive index of light having a wavelength of 570 nm of the transparent substrate 1, and is preferably 0.4 to 1.0. Larger is more preferable.
  • the refractive index of light having a specific wavelength of 570 nm of the dielectric material or oxide semiconductor material contained in the second high refractive index layer 4 is preferably larger than 1.5, and preferably 1.6 to 2.5. More preferably, it is 1.8 to 2.5.
  • the optical admittance of the conductive region a of the transparent conductor 100 is sufficiently adjusted by the second high refractive index layer 4.
  • the refractive index of the second high refractive index layer 4 is adjusted by the refractive index of the material included in the second high refractive index layer 4 and the density of the material included in the second high refractive index layer 4.
  • the dielectric material or the oxide semiconductor material included in the second high refractive index layer 4 may be an insulating material or a conductive material; included in the first high refractive index layer 2. It can be similar to the material.
  • the first high refractive index layer 2 and the second high refractive index layer 4 may include the same material or different materials.
  • the thickness of the second high refractive index layer 4 is preferably 10 to 150 nm, more preferably 20 to 80 nm.
  • the thickness of the second high refractive index layer 4 is 10 nm or more, the optical admittance of the conductive region a of the transparent conductor 100 is sufficiently adjusted by the second high refractive index layer 4.
  • the thickness of the second high refractive index layer 4 is 150 nm or less, the light transmittance of the region including the second high refractive index layer 4 is unlikely to decrease.
  • the thickness of the second high refractive index layer 4 is measured with an ellipsometer.
  • the second high refractive index layer 4 is formed by a general vapor deposition method such as a vacuum vapor deposition method, a sputtering method, an ion plating method, a plasma CVD method, a thermal CVD method, etc., like the first high refractive index layer 2 described above. It may be a layer formed by the method.
  • the second high refractive index layer 4 may be a layer patterned by any method. For example, a layer formed in a pattern by a vapor deposition method by placing a mask having a desired pattern on the deposition surface may be used. Moreover, the layer patterned by the well-known etching method may be sufficient.
  • the transparent conductor 100 of the present invention includes the conductive region a and the insulating region b of the transparent conductor 100 between the transparent substrate 1 and the first high refractive index layer 2.
  • An underlayer 5 for adjusting the optical admittance may be included.
  • the base layer 5 may be disposed in both the conductive region a and the insulating region b of the transparent conductor 100.
  • the base layer 5 is preferably provided only in the conduction region a.
  • the underlayer 5 includes a dielectric material or an oxide semiconductor material in which the refractive index of light having a wavelength of 570 nm is lower than the refractive index of light having a wavelength of 570 nm of the transparent substrate 1.
  • the refractive index of light having a wavelength of 570 nm of the dielectric material or oxide semiconductor material is preferably 0.03 to 0.5 lower than the refractive index of light having a wavelength of 570 nm of the transparent substrate 1, and is preferably 0.05 to 0.3. More preferably, it is low.
  • the specific refractive index of light having a wavelength of 570 nm of the underlayer 5 is preferably 1.8 or less, more preferably 1.30 to 1.6, still more preferably 1.35 to 1. 5.
  • Examples of the dielectric material or oxide semiconductor material included in the underlayer 5 include magnesium fluoride (MgF 2 ), SiO 2 , AlF 3 , CaF 2 , CeF 3 , CdF 3 , LaF 3 , LiF, NaF, and NdF. 3 , YF 3 , YbF 3 , Ga 2 O 3 and the like. Among these, MgF 2 or SiO 2 is preferable from the viewpoint that the refractive index is low.
  • the underlayer 5 may contain only one kind of these materials or two or more kinds.
  • the thickness of the underlayer 5 is appropriately set based on optical admittance described later, but is preferably 10 to 500 nm, and more preferably 30 to 250 nm. When the thickness of the underlayer 5 is 10 nm or more, the optical admittance of the conductive region a of the transparent conductor 100 is sufficiently adjusted by the underlayer 5.
  • the underlayer 5 can be a layer formed by a general vapor deposition method such as a vacuum deposition method, a sputtering method, an ion plating method, a plasma CVD method, or a thermal CVD method. From the viewpoint of easiness of film formation and the like, the underlayer is preferably a layer formed by electron beam evaporation or sputtering.
  • the underlayer 5 may be a layer patterned by any method. It may be a layer formed in a pattern by a vapor deposition method by placing a mask having a desired pattern on the surface to be deposited; a layer patterned by a known etching method Good.
  • the transparent conductor 100 of the present invention includes the first high refractive index layer 2 and the transparent metal film 3 or the transparent metal film 3 and the second high refractive index.
  • a low refractive index layer 6 for suppressing plasmon absorption of the transparent metal film 3 may be included in one or both of the layers 4.
  • the low refractive index layer 6 is disposed in contact with the transparent metal film 3.
  • the low refractive index layer 6 may be disposed not only in the conductive region a of the transparent conductor 100 but also in the insulating region b.
  • the low refractive index layer 6 is preferably patterned in the same shape as the transparent metal film 3; that is, it is preferably disposed only in the conductive region a.
  • the low refractive index layer 6 includes light having a wavelength of 570 nm based on the refractive index of light having a wavelength of 570 nm of the dielectric material or oxide semiconductor material contained in the first high refractive index layer 2 and the second high refractive index layer 4 described above.
  • the dielectric material or oxide semiconductor material included in the low-refractive index layer 6 has a refractive index of light having a wavelength of 570 nm.
  • the dielectric material or oxide included in the first high-refractive index layer 2 and the second high-refractive index layer 4 It is preferably 0.2 or more lower than the refractive index of light having a wavelength of 570 nm of the semiconductor material, and more preferably 0.4 or lower.
  • the specific refractive index of light having a wavelength of 570 nm of the dielectric material or oxide semiconductor material contained in the low refractive index layer 6 is preferably less than 1.8, more preferably 1.30 to 1.6. Particularly preferred is 1.35 to 1.5.
  • the refractive index of the low refractive index layer 6 is mainly adjusted by the refractive index of the material included in the low refractive index layer 6 and the density of the material included in the low refractive index layer 6.
  • the dielectric material or oxide semiconductor material included in the low refractive index layer 6 is MgF 2 , SiO 2 , AlF 3 , CaF 2 , CeF 3 , CdF 3 , LaF 3 , LiF, NaF, NdF 3 , YF 3 , YbF. 3 , Ga 2 O 3 , LaAlO 3 , Na 3 AlF 6 , Al 2 O 3 , MgO, and ThO 2 .
  • Dielectric material or an oxide semiconductor material is inter alia, is MgF 2, SiO 2, CaF 2 , CeF 3, LaF 3, LiF, NaF, NdF 3, Na 3 AlF 6, Al 2 O 3, MgO or ThO 2,
  • MgF 2 and SiO 2 are particularly preferable.
  • the reason why the plasmon absorption of the transparent metal film 3 is suppressed when the low refractive index layer 6 is disposed in contact with the transparent metal film 3 is as follows.
  • the localized plasmon absorption cross section C abs is expressed by the following equation.
  • the thickness of the low refractive index layer 6 is preferably a thickness that does not significantly affect the optical admittance of the transparent conductor 100.
  • the thickness of the low refractive index layer 6 is preferably 0.1 to 15 nm, more preferably 1 to 10 nm, and further preferably 3 to 8 nm.
  • the low refractive index layer 6 can be a layer formed by a general vapor deposition method such as a vacuum deposition method, a sputtering method, an ion plating method, a plasma CVD method, a thermal CVD method or the like. From the viewpoint of easiness of film formation and the like, the low refractive index layer 6 and other layers are preferably layers formed by electron beam evaporation or sputtering.
  • the low refractive index layer 6 may be a layer patterned by any method. For example, it may be a layer formed in a pattern by a vapor deposition method by placing a mask having a desired pattern on the surface to be deposited; a layer patterned by a known etching method. May be.
  • the equivalent admittance (hereinafter also referred to as “equivalent admittance of the conduction region”) of light having a wavelength of 570 nm on the surface of the laminated body of the conduction region including the transparent metal film is Y.
  • a x a + iy expressed in a, contains no transparent metal film light equivalent admittance of wavelength 570nm of the laminate surface of the insulating region (hereinafter, referred to as "equivalent admittance of the insulating region")
  • a Y b x b + iy
  • ((x a -x b ) 2 + (y a -y b ) 2 ) 0.5 is less than 0.5 , preferably 0.3 or less. Therefore, it is difficult to visually recognize the pattern of the conduction region. The reason will be described below.
  • Reflectance R a of the laminate surface of the conductive region includes an optical admittance Y env medium in contact with the laminate surface, and the equivalent admittance Y a surface of the conductive region, determined from.
  • the reflectance R b of the surface of the stacked body in the insulating region is determined from the optical admittance Y env of the medium in contact with the surface of the stacked body and the equivalent admittance Y b of the surface of the conductive region b.
  • the surface of the laminate means a member made of an organic resin disposed on the transparent conductor or a surface in contact with the environment.
  • the medium in contact with the laminate surface means a member or environment through which light incident on the laminate passes immediately before incidence; a member or environment made of an organic resin.
  • the reflectances R a and R b of each region are expressed by the following formulas (a) and (b), respectively.
  • the values of the equivalent admittance Y a conductive region, and the value of the equivalent admittance Y b of the insulating region is approximated, and the reflectivity R a of the laminate surface of the conductive region, the laminate surface of the insulating region
  • the reflectance Rb is approximated, and the pattern of the conduction region becomes difficult to be visually recognized.
  • the optical admittance Y env of the medium is obtained from the ratio (H / E) of the electric field strength and the magnetic field strength, and is the same as the refractive index n env of the medium.
  • the equivalent admittance Y a on the surface of the conducting region and the equivalent admittance Y b on the surface of the insulating region are obtained from the optical admittance of the layers included in each region. For example, when the insulating region includes only a transparent substrate, the equivalent admittance of the insulating region is equal to the optical admittance (refractive index) of the transparent substrate.
  • the optical admittance Y x (E x H x ) of the stacked body from the first layer to the x layer is from the first layer to the (x ⁇ 1) layer. It is represented by the product of the optical admittance Y x-1 (E x-1 H x-1 ) of the laminate up to the eye and a specific matrix; specifically, in the following formula (1) or formula (2) Is required.
  • the x-th layer is a layer made of a dielectric material or an oxide semiconductor material
  • the optical admittance Yx (E x H x ) of the laminate from the transparent substrate to the outermost layer becomes the equivalent admittance of the region.
  • FIG. 3B shows an admittance locus at a wavelength of 570 nm of the transparent conductor of Example 1 described later.
  • the transparent conductor includes a transparent substrate (PET), a first high refractive index layer (ITO), a transparent metal film (Ag), a low refractive index layer (SiO 2 ), and a second high refractive index layer. It has a conduction region provided with a refractive index layer (ITO) in this order, and an insulation region consisting only of a transparent substrate.
  • ITO refractive index layer
  • the coordinates (x b , y b ) of the equivalent admittance Y b on the surface of the insulating region coincide with the admittance coordinates of the transparent substrate.
  • the coordinates (x a , y a ) of the equivalent admittance Y a of the conduction region coincide with the final coordinates of the admittance locus. It can be said that the closer the distance between the coordinates of Y a and the coordinates of Y b in the graph, the closer they are.
  • the distance ((x a ⁇ x b ) 2 + (y a ⁇ y b ) 2 ) 0.5 is specified in the transparent conductor according to the present invention; Close (less than 0.5).
  • the transparent conductor of the present invention the reflectivity R b of the above formula (a) and (b) the reflectance of the laminate surface of the conductive region represented by R a and the insulating region laminate surface approximation
  • the coordinates of the equivalent admittance Y a of the conducting region and the coordinates of the equivalent admittance Y b of the insulating region are made sufficiently close; that is, ((x a ⁇ x b ) 2 + (y a ⁇ y b ) 2 )
  • the admittance locus of the conduction region is symmetric about the horizontal axis of the graph, and (ii) only the transparent substrate is in the insulation region Is preferably included.
  • FIG. 4A shows an admittance locus of a transparent conductor having a transparent substrate / transparent metal film / high refractive index layer in this order at a wavelength of 570 nm
  • FIG. 4B shows an admittance of the transparent conductor having a wavelength of 450 nm, a wavelength of 570 nm, and a wavelength of 700 nm. Show the trajectory.
  • the admittance locus at a specific wavelength here, wavelength 570 nm
  • FIG. 4B shows other wavelengths (for example, 450 nm and coordinates of the equivalent admittance Y a at 700 nm) is easily shake greatly.
  • the equivalent admittance Y a conductive region at a particular wavelength as the equivalent admittance Y b of the insulating region is approximated, in other wavelengths, equivalent admittance Y a conductive region, the equivalent of the insulating region admittance Y b And do not approximate. That is, in some wavelength regions, the reflectivity of the conductive region and the reflectivity of the insulating region are different, and the pattern of the conductive region is easily visually recognized.
  • the admittance locus conductive region is in line symmetry about the horizontal axis of the graph, in the entire wavelength range, the end point of the admittance locus (equivalent admittance Y a coordinate conductive region) is easily fit in a specific range Become. As a result, in all wavelength regions, the reflectance of the conductive region and the reflectance of the insulating region are approximated.
  • the admittance locus and is centered symmetrically on the horizontal axis of the graph, the endpoint of the admittance locus (coordinates of the equivalent admittance Y a conductive region) is the starting point of the admittance locus; approaches the admittance coordinates that is a transparent substrate.
  • the admittance coordinates of the insulating region match the admittance coordinates of the transparent substrate. Therefore, with the configuration that includes only the transparent substrate to the insulating region, and the coordinates of the equivalent admittance Y b of the insulating regions, the coordinates of the equivalent admittance Y a conductive region is easily approximated.
  • the transparent metal film has a large value of the imaginary part of the optical admittance. Therefore, as shown in FIG. 4A, when a transparent metal film is directly laminated on a transparent substrate, the negative axis of the vertical axis (imaginary part) from the start point of the admittance locus (the admittance coordinates (about 1.5, 0) of the transparent substrate). The admittance locus moves greatly in the direction, and the absolute value of the imaginary part of the admittance coordinates becomes very large. When the absolute value of the imaginary part of the admittance coordinates is increased, the admittance locus is less likely to be axisymmetric about the horizontal axis of the graph even if another layer is laminated on the transparent metal film.
  • the first high refractive index layer when the first high refractive index layer is disposed between the transparent substrate and the transparent metal film as in the transparent conductor of the present invention, the first high refractive index layer causes the admittance locus.
  • the coordinates of the imaginary part move greatly in the positive direction. Therefore, even if the admittance trajectory moves greatly in the negative direction of the imaginary part due to the transparent metal film, the absolute value of the imaginary part is difficult to increase.
  • the second high refractive index layer disposed on the other transparent metal film, the admittance locus can be moved to the side (admittance coordinates of the transparent substrate) coordinates of the equivalent admittance Y b of the insulating regions, admittance locus Is close to line symmetry about the horizontal axis of the graph.
  • the optical admittance of the transparent metal film on the second high refractive index layer side is represented by Y2.
  • x 1 and x 2 are preferably 7.0 or less, and more preferably 5.5 or less.
  • ) of the difference between x 1 and x 2 is preferably less than 0.5, more preferably 0.2 or less, and even more preferably 0.1 or less. is there. when the difference between x 1 and x 2 is small, the equivalent admittance prone linear symmetry around the horizontal axis of the graph.
  • is preferably less than 1, more preferably 0.5 or less, and still more preferably 0.3 or less. If
  • y 1 is preferably 0.2 or more, more preferably 0.3 to 1.5, and still more preferably 0.3 to 1.0.
  • y 2 is preferably ⁇ 0.2 or less, more preferably ⁇ 0.3 to ⁇ 1.5, and more preferably ⁇ 0.3 to ⁇ 1.0.
  • x 1 and y 1 are adjusted by the refractive index of the first high refractive index layer, the thickness of the first high refractive index layer, and the like.
  • the refractive index of the first high refractive index layer is high, or when the thickness is somewhat thick, the values of x 1 and y 1 tend to increase.
  • the values of x 1 and y 1 tend to increase.
  • x 2 and y 2 the refractive index of the values and the transparent metal film x 1 and y 1, is adjusted by the thickness or the like of the transparent metal film.
  • the refractive index of light having a wavelength of 570 nm of the first high refractive index layer and the refractive index of light having a wavelength of 570 nm of the second high refractive index layer is preferably 0.5 or less, more preferably 0.3 or less.
  • the difference between the thickness of the first high refractive index layer and the thickness of the second high refractive index layer is preferably 20 nm or less, and more preferably 10 nm or less.
  • the admittance locus of the first high refractive index layer and the admittance locus of the second high refractive index layer are centered on the horizontal axis of the graph. It tends to be line symmetric.
  • the reflectance R a of the surface of the stacked body in the conductive region becomes closer to
  • the reflectance R b of the surface of the laminate in the insulating region is lowered.
  • the light transmittance of the entire transparent conductor (conduction region and insulating region) is increased.
  • the distance ((x a ⁇ n env ) 2 + (y a ) 2 ) from the admittance coordinate (n env , 0) of 0.5 is preferably less than 0.4, more preferably 0.3 or less is there. If the distance is less than 0.4, the reflectance R a of the laminate surface of the conductive region is sufficiently small, the permeability of the light conductive region is increased.
  • the equivalent admittance Y a conductive region, and the equivalent admittance Y b of the insulating region is approximated.
  • the coordinates of the equivalent admittance Y b of the insulating regions the distance between the admittance coordinates of the medium becomes closer; the reflectance R b of the laminate surface of the insulating region is sufficiently small, also increases the light-transmitting insulating region .
  • the close to means the distance between the admittance coordinates of the admittance coordinates and medium equivalent admittance Y a conductive region, selecting a transparent substrate having a refractive index close to that of the medium; or close to the refractive index of the transparent substrate For example, selecting a medium.
  • region are approximated, respectively.
  • the difference ⁇ R between the luminous reflectance of the conductive region and the luminous reflectance of the insulating region is preferably 3% or less, more preferably 1% or less, and still more preferably 0.3. % Or less.
  • the luminous reflectance of the conduction region is preferably 5% or less, more preferably 3% or less, and further preferably 1% or less.
  • the luminous reflectance of the insulating region is preferably 5% or less, more preferably 3% or less, and further preferably 1% or less.
  • the luminous reflectance is a Y value measured with a spectrophotometer (U4100; manufactured by Hitachi High-Technologies Corporation).
  • the average absorption rate of light having a wavelength of 400 nm to 800 nm in the conductive region and the insulating region of the transparent conductor is preferably 10% or less, more preferably 8% or less, and further preferably 7% or less. is there.
  • the maximum values of the light absorptance of wavelengths 450 nm to 800 nm in the conduction region and the insulation region are each preferably 15% or less, more preferably 10% or less, and further preferably 9% or less.
  • the light absorptance of the conductive region is reduced when the transparent conductor includes the low refractive index layer described above or the light absorptivity of the material included in each layer is low.
  • the average transmittance of light having a wavelength of 450 nm to 800 nm in the conductive region and the insulating region of the transparent conductor is preferably 50% or more, more preferably 70% or more, and further preferably 80% or more.
  • the average reflectance of light having a wavelength of 500 nm to 700 nm in the conductive region and the insulating region of the transparent conductor is preferably 20% or less, more preferably 15% or less, and further preferably 10% or less. is there. If the average transmittance of light having the above wavelength is 50% or more and the average reflectance is 20% or less, the transparent conductor can also be applied to uses where high transparency is required.
  • permeability and average reflectance measure the average transmittance
  • the a * value and b * value in the L * a * b * color system are preferably within ⁇ 30, and more preferably within ⁇ 5, in both the conductive region and the insulating region of the transparent conductor. Yes, more preferably within ⁇ 3.0, and particularly preferably within ⁇ 2.0. If the a * value and the b * value in the L * a * b * color system are within ⁇ 30, both the conduction region and the insulation region are observed as colorless and transparent. The a * value and b * value in the L * a * b * color system are measured with a spectrophotometer.
  • the surface electric resistance of the conductive region of the transparent conductor is preferably 50 ⁇ / ⁇ or less, more preferably 30 ⁇ / ⁇ or less.
  • a transparent conductor having a surface electric resistance value of 50 ⁇ / ⁇ or less in the conduction region can be applied to a transparent conductive panel for a capacitive touch panel.
  • the surface electrical resistance value of the transparent conductor in the conduction region is adjusted by the thickness of the transparent metal film.
  • the surface electrical resistance value of the transparent conductor in the conduction region is measured in accordance with, for example, JIS K7194, ASTM D257, or the like. It is also measured by a commercially available surface electrical resistivity meter.
  • transparent conductors include various types of displays such as liquid crystal, plasma, organic electroluminescence, field emission, touch panels, mobile phones, electronic paper, various solar cells, various electroluminescent dimming elements, etc. It can be preferably used for a substrate of an optoelectronic device.
  • the surface of the transparent conductor (for example, the surface opposite to the transparent substrate) may be bonded to another member via an adhesive layer or the like.
  • the equivalent admittance Y b admittance coordinates of the equivalent admittance Y a admittance coordinate and the insulating surface of a region of the surface of the conductive region of the transparent conductor and the admittance coordinates of the adhesive layer the previously described A range is preferable. Thereby, reflection at the interface between the transparent conductor and the adhesive layer is suppressed.
  • the admittance coordinates of the equivalent admittance Y a of the surface of the conductive region of the transparent conductor and the admittance of the equivalent admittance Y b of the surface of the insulating region are used. It is preferable that the coordinates and the admittance coordinates of the air are in the aforementioned range. Thereby, reflection of light at the interface between the transparent conductor and air is suppressed.
  • a transparent metal film having a plasmon absorption rate of 15% or less and a thickness of 15 nm or less in the entire wavelength range of 400 nm to 800 nm is obtained by the following two steps. It is preferable that the film is formed after that.
  • the material of the transparent metal film is difficult to migrate on the first high refractive index layer. Further, the interval between the growth nuclei is narrower than the interval between the lumps formed by migration of atoms. Therefore, when the film grows starting from this growth nucleus, a flat film is likely to be formed even if the thickness is small. That is, even if the thickness is small, conduction is obtained and a transparent metal film in which plasmon absorption does not occur is obtained.
  • (A) Growth nucleus formation step Growth nuclei for forming a transparent metal film are formed on the first high refractive index layer.
  • a thin film (growth nuclei) is formed from a metal that is difficult to migrate (move) on the first high refractive index layer.
  • metals that can be growth nuclei include gold, platinum group, cobalt, nickel, molybdenum, titanium, aluminum, chromium, nickel, or alloys thereof. Only one of these may be used to form a growth nucleus, or two or more may be combined to form a growth nucleus. Among these, it is preferable to form a growth nucleus with platinum palladium, palladium, titanium, or aluminum.
  • Platinum palladium or palladium is difficult to migrate on the first high refractive index layer, has a high affinity with the metal constituting the transparent metal film, and provides a dense and fine growth nucleus.
  • the ratio of palladium contained in platinum palladium is preferably 10% by mass or more, and more preferably 20% by mass or more. When the proportion of palladium is 10% by mass or more, dense and fine growth nuclei are easily obtained, and a smooth transparent metal film is easily obtained.
  • a fine and fine growth nucleus similar to platinum palladium or palladium can be easily obtained by forming the film while breaking the thin film (growth nucleus) finely by ion assist or the like.
  • the thin film (growth nucleus) made of the above metal is preferably formed by sputtering or vapor deposition.
  • the average thickness of the thin film (growth nucleus) is preferably 3 nm or less, more preferably 0.5 nm or less, still more preferably a monoatomic film, and particularly preferably metal atoms are attached to be separated from each other. It is a membrane.
  • the average thickness of the thin film (growth nucleus) is adjusted by the film forming speed and the film forming time.
  • sputtering methods include ion beam sputtering, magnetron sputtering, reactive sputtering, bipolar sputtering, and bias sputtering.
  • the sputtering time is appropriately selected according to the average thickness of the thin film (growth nucleus) to be formed and the film formation speed.
  • the sputter deposition rate is preferably from 0.1 to 15 ⁇ / second, more preferably from 0.1 to 7 ⁇ / second.
  • examples of the vapor deposition method include vacuum vapor deposition method, electron beam vapor deposition method, ion plating method, ion beam vapor deposition method and the like.
  • the deposition time is appropriately selected according to the thin film to be formed (growth nuclei) and the deposition rate.
  • the deposition rate is preferably 0.1 to 15 ⁇ / second, more preferably 0.1 to 7 ⁇ / second.
  • a metal layer is formed on the first high refractive index layer, and this metal layer is dry-etched to a desired thickness.
  • the dry etching referred to in the present invention includes reactive gas etching in which etching is performed by a chemical reaction and a method of polishing with lens paper or the like, but etching that involves physical collision of etching gas, ions, radicals, and the like. A method is preferred.
  • the type of the metal thin film (growth nucleus) is not particularly limited as long as it is a metal having a high affinity with the metal contained in the transparent metal film.
  • the metal contained in the transparent metal film may be the same or different; examples include silver, gold, platinum group, titanium and aluminum.
  • the method for forming the metal layer is not particularly limited, and may be a dry deposition method such as a vacuum deposition method, a sputtering method, an ion plating method, a plasma CVD method, a thermal CVD method, or a wet deposition method such as a plating method. .
  • the average thickness of the metal layer to be formed is preferably 3 to 15 nm, more preferably 5 to 10 nm. When the average thickness of the metal layer is 3 nm or more, sufficient growth nuclei are easily obtained.
  • the dry etching method for the metal layer is preferably an etching method involving physical collision as described above, and may be ion beam etching, reverse sputter etching, plasma etching, or the like.
  • ion beam etching is particularly preferable from the viewpoint that desired unevenness can be easily formed on the etched thin film (growth nucleus).
  • the average thickness of the thin film (growth nucleus) obtained by dry etching of the metal layer is preferably 3 nm or less, more preferably 2 nm or less, still more preferably 0.01 to 1 nm, and particularly preferably 0.00. It is 01 to 0.2 nm.
  • the average thickness of the growth nucleus is obtained from the difference between the thickness of the metal film and the etching thickness of the metal film.
  • the etching thickness of the metal film is the product of the etching rate and the etching time.
  • the etching rate is obtained from the time until a 50 nm thick metal layer separately prepared on a glass substrate is etched under the same conditions and the light transmittance after the etching becomes equivalent to that of the glass substrate (approximately 0 nm thickness).
  • the average thickness of the growth nucleus is adjusted by the time for dry etching.
  • Transparent metal film formation step A metal is laminated on the first high refractive index layer on which the above-described growth nuclei are formed by a general vapor deposition method to form a transparent metal film.
  • the type of the vapor deposition method is not particularly limited, and may be, for example, a vacuum deposition method, a sputtering method, an ion plating method, a plasma CVD method, a thermal CVD method, or the like.
  • the vacuum evaporation method or the sputtering method is preferable. According to the vacuum evaporation method or the sputtering method, a transparent metal film having a uniform thickness and a desired thickness is easily obtained.
  • Example 1 On a transparent substrate (refractive index of light with a wavelength of 570 nm: 1.59) made of Toyobo PET (Cosmo Shine A4300 thickness 50 ⁇ m), the following method is used: first high refractive index layer / transparent metal film / low refractive index layer / A second high refractive index layer was laminated in order. Thereafter, the laminate was patterned by the following method.
  • FIG. 3B shows the admittance locus of the obtained transparent conductor at a wavelength of 570 nm
  • FIG. 3C shows the spectral characteristics of the transparent conductor.
  • First high refractive index layer On the transparent substrate, L-430S-FHS manufactured by Anerva Co., Ltd. was used. Ar 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target side power 150 W, film formation rate 2.0 ⁇ / s. Sputtered. The target-substrate distance was 86 mm. The obtained first high refractive index layer was 43 nm. The refractive index of light with a wavelength of 570 nm of ITO was 2.12, and the refractive index of light with a wavelength of 570 nm of the first high refractive index layer was also 2.12.
  • a resist layer is formed in a pattern on the obtained laminate, and the first high-refractive index layer, the transparent metal film, the low-refractive index layer, and the second high-refractive index layer are formed in the pattern shown in FIG.
  • Patterning was performed with an ITO etching solution (manufactured by Hayashi Junyaku Co., Ltd.) in the shape of a conductive region a and a line-shaped insulating region b separating the conductive region a). Only the transparent substrate was included in the insulating region. The width of the line-shaped insulating region b was 16 ⁇ m.
  • Example 2 On a Konica Minolta TAC film (transparent substrate (refractive index of light having a wavelength of 570 nm: 1.49)), the following method is used: first high refractive index layer / low refractive index layer (A) / transparent metal film / low refractive index The refractive index layer (B) / second high refractive index layer was laminated in order. Thereafter, the laminate was patterned by the following method.
  • FIG. 5A shows the admittance locus of the obtained transparent conductor at a wavelength of 570 nm
  • FIG. 5B shows the spectral characteristics of the transparent conductor.
  • First high refractive index layer On the transparent substrate, L-430S-FHS manufactured by Anelva is used, Ar 20 sccm, O 2 1 sccm, sputtering pressure 0.5 Pa, room temperature, target side power 150 W, film formation rate 1.2 ⁇ / s, Nb 2 O 5 was DC sputtered. The target-substrate distance was 86 mm. The obtained first high refractive index layer was 34 nm. The refractive index of light with a wavelength of 570 nm of Nb 2 O 5 was 2.31, and the refractive index of light with a wavelength of 570 nm of the first high refractive index layer was also 2.31.
  • Low refractive index layer (A) On the first high refractive index layer, L-430S-FHS manufactured by Anelva is used, Ar 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target side power 300 W, film formation rate 2 ⁇ / s. 2 was RF sputtered. The target-substrate distance was 86 mm.
  • the obtained low refractive index layer (A) was 3 nm.
  • the refractive index of light with a wavelength of 570 nm of SiO 2 was 1.46, and the refractive index of light with a wavelength of 570 nm of the low refractive index layer (A) was also 1.46.
  • Low refractive index layer (B) On the transparent metal film, SiO 2 was RF-sputtered under the same conditions as those for forming the low refractive index layer (A). The obtained low refractive index layer (B) was 3 nm. The refractive index of light with a wavelength of 570 nm of SiO 2 was 1.46, and the refractive index of light with a wavelength of 570 nm of the low refractive index layer (B) was also 1.46.
  • (Second high refractive index layer) Nb 2 O 5 was DC sputtered on the low refractive index layer (B) under the same conditions as those for forming the first high refractive index layer.
  • the obtained second high refractive index layer was 35 nm.
  • the refractive index of light with a wavelength of 570 nm of Nb 2 O 5 was 2.31, and the refractive index of light with a wavelength of 570 nm of the second high refractive index layer was also 2.31.
  • a resist layer is formed in a pattern on the obtained laminate, and the first high refractive index layer, the low refractive index layer (A), the transparent metal film, the low refractive index layer (B), and the second high refractive index.
  • the layer was patterned with hydrofluoric acid in the pattern shown in FIG. 15 (a pattern including a plurality of conductive regions a and line-shaped insulating regions b separating the conductive regions a). Only the transparent substrate was included in the insulating region. The width of the line-shaped insulating region b was 40 ⁇ m.
  • Example 3 On a Konica Minolta TAC film (transparent substrate (refractive index of light having a wavelength of 570 nm: 1.49)), the following method is used: first high refractive index layer / low refractive index layer (A) / transparent metal film / low refractive index The refractive index layer (B) / second high refractive index layer was laminated in order. Thereafter, the laminate was patterned by the following method.
  • FIG. 6A shows the admittance locus of the obtained transparent conductor at a wavelength of 570 nm
  • FIG. 6B shows the spectral characteristics of the transparent conductor.
  • First high refractive index layer On the transparent substrate, TiO 2 was deposited by electron beam (EB) with ion assistance at 320 mA and a film formation rate of 3 ⁇ ⁇ ⁇ ⁇ / s using a Gener 1300 manufactured by Optorun. The obtained first high refractive index layer was 34 nm.
  • the ion beam was irradiated at a current of 500 mA, a voltage of 500 V, and an acceleration voltage of 400 V.
  • O 2 gas: 50 sccm and Ar gas: 8 sccm were introduced.
  • the refractive index of light with a wavelength of 570 nm of TiO 2 was 2.35, and the refractive index of light with a wavelength of 570 nm of the first high refractive index layer was also 2.35.
  • Low refractive index layer (A) On the first high refractive index layer, L-430S-FHS manufactured by Anelva is used, Ar 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target side power 300 W, film formation rate 2 ⁇ / s. 2 was RF sputtered. The target-substrate distance was 86 mm.
  • the obtained low refractive index layer (A) was 3 nm.
  • the refractive index of light with a wavelength of 570 nm of SiO 2 was 1.46, and the refractive index of light with a wavelength of 570 nm of the low refractive index layer (A) was also 1.46.
  • an Ag-Cu alloy (Ag 98 mass%, Cu 2) was used using L-430S-FHS manufactured by Anerva Co., Ar 20 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 100 W, film formation rate 2.5 ⁇ / s. (Mass%) was RF sputtered to obtain a transparent metal film (7 nm) made of Ag-Cu.
  • the target-substrate distance was 86 mm.
  • Low refractive index layer (B) On the transparent metal film, SiO 2 was RF-sputtered under the same conditions as those for forming the low refractive index layer (A). The obtained low refractive index layer (B) was 5 nm. The refractive index of light with a wavelength of 570 nm of SiO 2 was 1.46, and the refractive index of light with a wavelength of 570 nm of the low refractive index layer (B) was also 1.46.
  • Electron beam (EB) deposition was performed on the transparent substrate under the same conditions as those for forming the first high refractive index layer while performing ion assist.
  • the obtained second high refractive index layer was 35 nm.
  • the refractive index of light with a wavelength of 570 nm of TiO 2 was 2.35, and the refractive index of light with a wavelength of 570 nm of the second high refractive index layer was also 2.35.
  • a resist layer is formed in a pattern on the obtained laminate, and the first high refractive index layer, the low refractive index layer (A), the transparent metal film, the low refractive index layer (B), and the second high refractive index.
  • the layer was patterned with hydrofluoric acid in the pattern shown in FIG. 15 (a pattern including a plurality of conductive regions a and line-shaped insulating regions b separating the conductive regions a). Only the transparent substrate was included in the insulating region. The width of the line-shaped insulating region b was 50 ⁇ m.
  • Example 4 On a Konica Minolta TAC film (transparent substrate (refractive index of light having a wavelength of 570 nm: 1.49)), the following method is used: first high refractive index layer / transparent metal film / low refractive index layer / second high refractive index The layers were laminated in order. Thereafter, the laminate was patterned by the following method.
  • FIG. 7A shows the admittance locus of the obtained transparent conductor at a wavelength of 570 nm
  • FIG. 7B shows the spectral characteristics of the transparent conductor.
  • First high refractive index layer On the transparent substrate, L-430S-FHS manufactured by Anelva is used, and ArO 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target side power 150 W, film formation rate 1.4 ⁇ / s DC Sputtered.
  • the target-substrate distance was 86 mm.
  • the obtained first high refractive index layer was 43 nm.
  • the refractive index of light with a wavelength of 570 nm of ZnO was 2.01, and the refractive index of light with a wavelength of 570 nm of the first high refractive index layer was also 2.01.
  • (Second high refractive index layer) ZnO was DC sputtered on the low refractive index layer under the same conditions as those for forming the first high refractive index layer.
  • the obtained second high refractive index layer was 41 nm.
  • the refractive index of light with a wavelength of 570 nm of ZnO was 2.01, and the refractive index of light with a wavelength of 570 nm of the second high refractive index layer was also 2.01.
  • a resist layer is formed in a pattern on the obtained laminate, and the first high-refractive index layer, the transparent metal film, the low-refractive index layer, and the second high-refractive index layer are formed in the pattern shown in FIG.
  • Patterning was performed with an IZO etching solution (manufactured by Hayashi Junyaku Co., Ltd.) in a shape including a conductive region a and a line-shaped insulating region b separating the conductive region a. Only the transparent substrate was included in the insulating region. The width of the line-shaped insulating region b was 20 ⁇ m.
  • Example 5 On a thin glass (50 ⁇ m) manufactured by Matsunami Glass Industrial Co., Ltd. (refractive index of light having a wavelength of 570 nm: 1.52), the following method is used: first high refractive index layer / transparent metal film / low refractive index layer / second high refractive index The rate layer was deposited in order. Thereafter, the laminate was patterned by the following method. An admittance locus of the obtained transparent conductor at a wavelength of 570 nm is shown in FIG. 8A, and a spectral characteristic of the transparent conductor is shown in FIG. 8B.
  • First high refractive index layer On the transparent substrate, L-430S-FHS manufactured by Anerva Co., Ltd. was used. Ar 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target side power 150 W, film formation rate 2.0 ⁇ / s. Sputtered. The target-substrate distance was 86 mm. The obtained first high refractive index layer was 46 nm. The refractive index of light with a wavelength of 570 nm of ITO was 2.12, and the refractive index of light with a wavelength of 570 nm of the first high refractive index layer was 2.12.
  • a resist layer is formed in a pattern on the obtained laminate, and the first high-refractive index layer, the transparent metal film, the low-refractive index layer, and the second high-refractive index layer are formed in the pattern shown in FIG.
  • Patterning was performed with an ITO etching solution (manufactured by Hayashi Junyaku Co., Ltd.) in a shape including a conductive region a and a line-shaped insulating region b separating the conductive region a. Only the transparent substrate was included in the insulating region. The width of the line-shaped insulating region b was 15 ⁇ m.
  • Example 6 On a transparent substrate (refractive index of light with a wavelength of 570 nm: 1.59) made of Toyobo PET (Cosmo Shine A4300, thickness 50 ⁇ m), the following method is used: first high refractive index layer / low refractive index layer (A) / transparent Metal film / low refractive index layer (B) / second high refractive index layer were laminated in order. Thereafter, the laminate was patterned by the following method. The admittance locus of the obtained transparent conductor at a wavelength of 570 nm is shown in FIG. 9A, and the spectral characteristics of the transparent conductor are shown in FIG. 9B.
  • First high refractive index layer On the transparent substrate, L-430S-FHS manufactured by Anelva is used, Ar 20 sccm, O 2 1 sccm, sputtering pressure 0.5 Pa, room temperature, target side power 150 W, film formation rate 1.2 ⁇ / s, Nb 2 O 5 was DC sputtered. The target-substrate distance was 86 mm.
  • the obtained first high refractive index layer was 32 nm.
  • the refractive index of light with a wavelength of 570 nm of Nb 2 O 5 was 2.31, and the refractive index of light with a wavelength of 570 nm of the first high refractive index layer was also 2.31.
  • Low refractive index layer (A) On the first high refractive index layer, L-430S-FHS manufactured by Anelva is used, Ar 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target side power 300 W, film formation rate 2 ⁇ / s. 2 was RF sputtered. The target-substrate distance was 86 mm.
  • the obtained low refractive index layer (A) was 5 nm.
  • the refractive index of light with a wavelength of 570 nm of SiO 2 was 1.46, and the refractive index of light with a wavelength of 570 nm of the low refractive index layer (A) was also 1.46.
  • Low refractive index layer (B) On the transparent metal film, SiO 2 was RF-sputtered under the same conditions as those for forming the low refractive index layer (A). The obtained low refractive index layer (B) was 5 nm. The refractive index of light with a wavelength of 570 nm of SiO 2 was 1.46, and the refractive index of light with a wavelength of 570 nm of the low refractive index layer (B) was also 1.46.
  • (Second high refractive index layer) Nb 2 O 5 was DC sputtered on the low refractive index layer (B) under the same conditions as those for forming the first high refractive index layer.
  • the obtained second high refractive index layer was 32 nm.
  • the refractive index of light with a wavelength of 570 nm of Nb 2 O 5 was 2.31, and the refractive index of light with a wavelength of 570 nm of the second high refractive index layer was also 2.31.
  • Example 7 On the transparent substrate (refractive index of light with a wavelength of 570 nm: 1.59) made of a PET film (GSAB manufactured by Kimoto Co., Ltd.) whose both surfaces are hard-coated, a first high refractive index layer / low refractive index layer by the following method (A) / transparent metal film / low refractive index layer (B) / second high refractive index layer were laminated in this order. Thereafter, the laminate was patterned by the following method.
  • First high refractive index layer On the transparent substrate, L-430S-FHS manufactured by Anelva is used, Ar 20 sccm, O 2 1 sccm, sputtering pressure 0.5 Pa, room temperature, target side power 150 W, film formation rate 1.2 ⁇ / s, Nb 2 O 5 was DC sputtered. The target-substrate distance was 86 mm. The obtained first high refractive index layer was 34 nm. The refractive index of light with a wavelength of 570 nm of Nb 2 O 5 was 2.31, and the refractive index of light with a wavelength of 570 nm of the first high refractive index layer was also 2.31.
  • Low refractive index layer (A) On the first high-refractive index layer, L-430S-FHS manufactured by Anelva is used, Ar 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 2 ⁇ / s. 2 was RF sputtered. The target-substrate distance was 86 mm.
  • the obtained low refractive index layer (A) was 3 nm.
  • the refractive index of light with a wavelength of 570 nm of SiO 2 was 1.46, and the refractive index of light with a wavelength of 570 nm of the low refractive index layer (A) was also 1.46.
  • Low refractive index layer (B) On the transparent metal film, SiO 2 was RF-sputtered under the same conditions as those for forming the low refractive index layer (A). The obtained low refractive index layer (B) was 3 nm. The refractive index of light with a wavelength of 570 nm of SiO 2 was 1.46, and the refractive index of light with a wavelength of 570 nm of the low refractive index layer (B) was also 1.46.
  • (Second high refractive index layer) Nb 2 O 5 was DC sputtered on the low refractive index layer (B) under the same conditions as those for forming the first high refractive index layer.
  • the obtained second high refractive index layer was 35 nm.
  • the refractive index of light with a wavelength of 570 nm of Nb 2 O 5 was 2.31, and the refractive index of light with a wavelength of 570 nm of the second high refractive index layer was also 2.31.
  • Example 8 On a transparent substrate made of a cycloolefin polymer (refractive index of light having a wavelength of 570 nm: 1.5), a base layer / first high refractive index layer / transparent metal film / low refractive index layer / second high refractive index by the following method. The rate layer was laminated in order. Thereafter, the laminate was patterned by the following method.
  • FIG. 11A shows an admittance locus of the obtained transparent conductor at a wavelength of 570 nm
  • FIG. 11B shows spectral characteristics of the transparent conductor.
  • MgF 2 was deposited by electron beam (EB) at 190 mA and a film formation rate of 10 ⁇ / s using a Gener 1300 manufactured by Optorun.
  • the obtained underlayer was 180 nm.
  • the refractive index of light with a wavelength of 570 nm of MgF 2 was 1.38, and the refractive index of light with a wavelength of 570 nm of the underlayer was also 1.38.
  • First high refractive index layer On the base layer, L-430S-FHS manufactured by Anelva was used, and ArO 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target side power 150 W, film formation rate 1.4 ⁇ / s DC Sputtered. The target-substrate distance was 86 mm.
  • the obtained first high refractive index layer was 39 nm.
  • the refractive index of light with a wavelength of 570 nm of ZnO was 2.01, and the refractive index of light with a wavelength of 570 nm of the first high refractive index layer was also 2.01.
  • (Second high refractive index layer) ZnO was DC sputtered on the low refractive index layer under the same conditions as those for forming the first high refractive index layer.
  • the obtained second high refractive index layer was 40 nm.
  • the refractive index of light with a wavelength of 570 nm of ZnO was 2.01, and the refractive index of light with a wavelength of 570 nm of the second high refractive index layer was also 2.01.
  • Example 9 On a transparent substrate made of a polycarbonate film (refractive index of light having a wavelength of 570 nm: 1.57), the first high refractive index layer / transparent metal film / low refractive index layer / second high refractive index layer are sequentially formed by the following method. Laminated. Thereafter, the laminate was patterned by the following method.
  • FIG. 12A shows the admittance locus of the obtained transparent conductor at a wavelength of 570 nm
  • FIG. 12B shows the spectral characteristics of the transparent conductor.
  • First high refractive index layer On the transparent substrate, L-430S-FHS manufactured by Anelva is used, Ar 20 sccm, O 2 1 sccm, sputtering pressure 0.5 Pa, room temperature, target side power 150 W, film formation rate 1.2 ⁇ / s, Nb 2 O 5 was DC sputtered. The target-substrate distance was 86 mm. The obtained first high refractive index layer was 33 nm. The refractive index of light with a wavelength of 570 nm of Nb 2 O 5 was 2.31, and the refractive index of light with a wavelength of 570 nm of the first high refractive index layer was also 2.31.
  • (Second high refractive index layer) ZnO was DC sputtered on the low refractive index layer under the same conditions as those for forming the first high refractive index layer.
  • the obtained second high refractive index layer was 43 nm.
  • the refractive index of light with a wavelength of 570 nm of ZnO was 2.01, and the refractive index of light with a wavelength of 570 nm of the second high refractive index layer was also 2.01.
  • the first high refractive index layer, transparent metal film, low refractive index layer, and second high refractive index layer of the obtained laminate were patterned in the same manner as in Example 1.
  • Example 10 A first high refractive index layer / transparent metal film / second high refractive index layer are formed in this order on a thin glass (50 ⁇ m) manufactured by Matsunami Glass Industry (refractive index of light having a wavelength of 570 nm: 1.52) by the following method. Filmed. Thereafter, the laminate was patterned by the following method.
  • FIG. 13A shows the admittance locus of the obtained transparent conductor at a wavelength of 570 nm
  • FIG. 13B shows the spectral characteristics of the transparent conductor.
  • First high refractive index layer On the transparent substrate, L-430S-FHS manufactured by Anelva is used, and ArO 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target side power 150 W, film formation rate 1.4 ⁇ / s DC Sputtered.
  • the target-substrate distance was 86 mm.
  • the obtained first high refractive index layer was 43 nm.
  • the refractive index of light with a wavelength of 570 nm of ZnO was 2.01, and the refractive index of light with a wavelength of 570 nm of the first high refractive index layer was also 2.01.
  • (Second high refractive index layer) ZnO was DC sputtered on the transparent metal film under the same conditions as those for forming the first high refractive index layer.
  • the obtained second high refractive index layer was 41 nm.
  • the refractive index of light with a wavelength of 570 nm of ZnO was 2.01, and the refractive index of light with a wavelength of 570 nm of the second high refractive index layer was also 2.01.
  • the first high refractive index layer, the transparent metal film, and the second high refractive index layer of the obtained laminate were patterned in the same manner as in Example 4.
  • Example 11 A first high refractive index layer / transparent metal film / second high refractive index layer are formed in this order on a thin glass (50 ⁇ m) manufactured by Matsunami Glass Industry (refractive index of light having a wavelength of 570 nm: 1.52) by the following method. Filmed. Thereafter, the laminate was patterned by the following method.
  • FIG. 14A shows the admittance locus of the obtained transparent conductor at a wavelength of 570 nm
  • FIG. 14B shows the spectral characteristics of the transparent conductor.
  • First high refractive index layer On the transparent substrate, L-430S-FHS manufactured by Anerva Co., Ltd. was used. Ar 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target side power 150 W, film formation rate 2.0 ⁇ / s. Sputtered. The target-substrate distance was 86 mm. The obtained first high refractive index layer was 46 nm. The refractive index of light with a wavelength of 570 nm of ITO was 2.12, and the refractive index of light with a wavelength of 570 nm of the first high refractive index layer was 2.12.
  • a resist layer is formed in a pattern on the obtained laminate, and the first high-refractive index layer, the transparent metal film, and the second high-refractive index layer are formed in a pattern (a plurality of conductive regions a, Patterning was performed with an ITO etching solution (produced by Hayashi Junyaku Co., Ltd.) in a pattern including a line-shaped insulating region b separating these. Only the transparent substrate was included in the insulating region. The width of the line-shaped insulating region b was 15 ⁇ m.
  • Example 12 On a transparent substrate made of a cycloolefin polymer (refractive index of light having a wavelength of 570 nm: 1.5), a first high refractive index layer / low refractive index layer (A) / transparent metal film / low refractive index layer by the following method (B) / Second high refractive index layer was laminated in order. Thereafter, the laminate was patterned by the following method.
  • FIG. 16A shows the admittance locus of the obtained transparent conductor at a wavelength of 570 nm
  • FIG. 16B shows the spectral characteristics of the transparent conductor.
  • a resist layer is formed in a pattern on the obtained laminate, and the first high refractive index layer, the low refractive index layer (A), the transparent metal film, the low refractive index layer (B), and the second high refractive index.
  • the rate layer was patterned with an ITO etchant (manufactured by Hayashi Junyaku Co., Ltd.) in the pattern shown in FIG. 15 (a pattern including a plurality of conductive regions a and a line-shaped insulating region b separating the conductive regions a). Only the transparent substrate was included in the insulating region.
  • the width of the line-shaped insulating region b was 15 ⁇ m.
  • Example 13 On a transparent substrate (refractive index of light having a wavelength of 570 nm: 1.59) made of Toyobo PET (Cosmo Shine A4300 thickness 50 ⁇ m), a low refractive index layer (A) / transparent metal film / low refractive index layer (B) / A second high refractive index layer was laminated in order. Each layer was formed in the same manner as in Example 12 except that the transparent metal film had a thickness of 6.7 nm. Thereafter, the laminate was patterned by the following method.
  • FIG. 17A shows the admittance locus of the obtained transparent conductor at a wavelength of 570 nm
  • FIG. 17B shows the spectral characteristics of the transparent conductor.
  • a platinum palladium film was formed on a transparent glass substrate by 0.2 s (0.1 nm) using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Corporation. The average thickness of platinum-palladium was calculated from the film formation rate at the manufacturer's nominal value of the sputtering apparatus. Thereafter, a silver film having a thickness of 20 nm was formed on the substrate to which platinum palladium was adhered using a BMC-800T vapor deposition machine manufactured by SYNCHRON. The resistance heating at this time was 210 A, and the film formation rate was 5 ⁇ / s.
  • the light transmittance and reflectance were measured with a spectrophotometer U4100 manufactured by Hitachi, Ltd.
  • the optical admittance of the transparent conductor obtained in each of the above examples was specified.
  • the optical admittance of wavelength 570nm of the first high refractive index layer side of the surface of the transparent metal Y1 x 1 + iy 1
  • the optical admittance of wavelength 570nm of the second high refractive index layer side of the surface of the transparent metal film Y2 x
  • the values of (x 1 , y 1 ) and (x 2 , y 2 ) when 2 + iy 2 are set are shown in Table 1.
  • the wavelength of the transparent metal film laminate including a light equivalent admittance of wavelength 570nm of (conductive region) surface expressed as Y a x a + iy a , stack not including the transparent metal film (insulating region) surface
  • the optical admittance of the layer contained in the transparent conductor was calculated by the thin film design software Essential Macleod Ver.9.4.375. Note that the thickness d, refractive index n, and absorption coefficient k of each layer necessary for the calculation are as follows. A. Woollam Co. Inc. The measurement was made with a VB-250 VASE ellipsometer manufactured by the manufacturer.
  • Measurement of film thickness in each example measurement of average transmittance, average reflectance, average absorption rate, and absorption maximum value of conduction region, measurement of luminous reflectance of conduction region and insulation region, L * of conduction region Measurement of the a * value and b * value in the a * b * color system and the surface electrical resistance of the conduction region was performed by the following method.
  • the transparent conductor and a non-alkali glass substrate EAGLE manufactured by Corning
  • XG thickness 7 mm ⁇ length 30 mm ⁇ width 30 mm
  • permeability and reflectance of the transparent conductor were measured from the alkali free glass substrate side.
  • measurement light for example, light having a wavelength of 450 nm to 800 nm
  • the light transmittance and reflectance were measured at U4100.
  • the absorptance was calculated from a formula of 100 ⁇ (transmittance + reflectance).
  • the value obtained by subtracting the reflection at the interface between the alkali-free glass substrate and the atmosphere (4%) and the reflection at the interface between the transparent substrate and the atmosphere (4%) from the measured value of the reflectance The reflectance of the transparent conductor was used. Also, the transmittance was added to the measured value of transmittance by 8% in consideration of the reflection at the interface between the alkali-free glass substrate and the atmosphere and the reflection of the transparent conductor at the interface between the transparent substrate and the atmosphere. The value was the transmittance of the transparent conductor.
  • the transparent conductors of Examples 5 and 6 were used in contact with air. Therefore, measurement light (for example, light having a wavelength of 450 nm to 800 nm) is incident on the conductive region without bonding an alkali-free glass substrate on the transparent conductor, and light is emitted by Hitachi, Ltd .: spectrophotometer U4100. The transmittance and reflectance were measured. The absorptance was calculated from a formula of 100 ⁇ (transmittance + reflectance). The measurement light was incident from the second high refractive index layer side.
  • measurement light for example, light having a wavelength of 450 nm to 800 nm
  • the transmittance and reflectance were measured.
  • the absorptance was calculated from a formula of 100 ⁇ (transmittance + reflectance).
  • the measurement light was incident from the second high refractive index layer side.
  • the value obtained by subtracting the reflection (4%) at the interface between the transparent substrate of the transparent conductor and the atmosphere from the measured value of the reflectance was taken as the reflectance of the transparent conductor.
  • the transmittance of the transparent conductor was determined by adding 4% to the measured value of the transmittance in consideration of the reflection of the transparent conductor at the interface between the transparent substrate and the atmosphere.
  • ⁇ Measuring method of luminous reflectance> The luminous reflectance was measured with a spectrophotometer (U4100; manufactured by Hitachi High-Technologies Corporation).
  • the distance between the admittance coordinates (x a , y a ) of the equivalent admittance Y a of the conduction region and the admittance coordinates (x b , y b ) of the equivalent admittance Y b of the insulation region is 0.10 or less.
  • the luminous reflectance was 0.2 or less (Examples 1, 4, 5, 7, 8, 10, 12, and 13). In these transparent conductors, the pattern of the conduction region was hardly visually recognized.
  • the distance between the admittance coordinates (x a , y b ) of the equivalent admittance Y a of the conduction region and the admittance coordinates (n env , 0) of the member or environment in contact with the surface of the conduction region is less than 0.4.
  • the average reflectance at wavelengths of 500 nm to 800 nm was 1% or less.
  • the average transmittance of light having a wavelength of 450 nm to 800 nm in the conduction region was high (89.4% or more), and the transparency of the transparent conductor was very high.
  • the pattern of the conduction region is hardly visible, and the surface electrical resistance value of the conduction region is low. Furthermore, it is excellent in flexibility. Therefore, it is preferably used for various types of optoelectronic devices such as various types of displays, touch panels, mobile phones, electronic paper, various types of solar cells, and various types of electroluminescent light control elements.

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Laminated Bodies (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

Un problème destiné à être résolu par la présente invention est de fournir un conducteur transparent, de telle manière qu'un motif sur une zone de continuité électrique ne soit pas facilement visible, que la résistance électrique superficielle sur la zone de continuité électrique soit faible, et que la flexibilité soit élevée. Pour résoudre le problème, un conducteur transparent est fourni, ((xa-xb)2+(ya-yb)2)0,5<0,5 étant satisfait, Ya=xa+iya représentant l'admittance équivalente d'une lumière de longueur d'onde de 570 nm au niveau d'une surface d'un stratifié comprenant un film métallique transparent, et Yb=xb+iyb représentant l'admittance équivalente de la lumière de longueur d'onde de 570 nm au niveau de la surface du stratifié ne comprenant pas le film métallique transparent.
PCT/JP2014/002000 2013-04-08 2014-04-08 Conducteur transparent WO2014167835A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015511108A JP6292225B2 (ja) 2013-04-08 2014-04-08 透明導電体

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013080319 2013-04-08
JP2013-080319 2013-04-08

Publications (1)

Publication Number Publication Date
WO2014167835A1 true WO2014167835A1 (fr) 2014-10-16

Family

ID=51689256

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2014/002000 WO2014167835A1 (fr) 2013-04-08 2014-04-08 Conducteur transparent

Country Status (2)

Country Link
JP (1) JP6292225B2 (fr)
WO (1) WO2014167835A1 (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015025525A1 (fr) * 2013-08-23 2015-02-26 コニカミノルタ株式会社 Corps conducteur transparent
WO2015166850A1 (fr) * 2014-05-02 2015-11-05 コニカミノルタ株式会社 Film électroconducteur transparent
JP2016087963A (ja) * 2014-11-06 2016-05-23 Tdk株式会社 透明導電体及びタッチパネル
WO2016153034A1 (fr) * 2015-03-26 2016-09-29 Tdk株式会社 Conducteur transparent et panneau tactile associé
WO2019131145A1 (fr) 2017-12-26 2019-07-04 住友化学株式会社 Procédé de production de dispositif électronique et dispositif électronique
US10510457B2 (en) 2015-12-11 2019-12-17 Tdk Corporation Transparent conductor

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10264287A (ja) * 1997-03-25 1998-10-06 Mitsui Chem Inc 透明積層体及びそれを用いた調光体及びディスプレイ用フィルター
JP2004342375A (ja) * 2003-05-13 2004-12-02 Mitsui Chemicals Inc 発光体
JP2006184849A (ja) * 2004-11-30 2006-07-13 Toppan Printing Co Ltd 反射防止積層体、光学機能性フィルタ、光学表示装置および光学物品
JP2010015861A (ja) * 2008-07-04 2010-01-21 Toyobo Co Ltd 透明導電性積層フィルム
WO2011013618A1 (fr) * 2009-07-30 2011-02-03 住友化学株式会社 Elément électroluminescent organique
JP2011138135A (ja) * 2010-01-04 2011-07-14 Samsung Corning Precision Materials Co Ltd 透明導電膜及びそれを含むディスプレイフィルタ
JP2012111225A (ja) * 2010-11-04 2012-06-14 Nitto Denko Corp 透明導電性フィルムおよびタッチパネル
JP2012160203A (ja) * 2012-04-24 2012-08-23 Japan Display East Co Ltd タッチパネル、及びこれを用いた表示装置
JP2013016417A (ja) * 2011-07-06 2013-01-24 Canon Inc 有機発光素子、発光装置、画像形成装置、表示装置および撮像装置
WO2014064939A1 (fr) * 2012-10-24 2014-05-01 コニカミノルタ株式会社 Conducteur transparent

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10264287A (ja) * 1997-03-25 1998-10-06 Mitsui Chem Inc 透明積層体及びそれを用いた調光体及びディスプレイ用フィルター
JP2004342375A (ja) * 2003-05-13 2004-12-02 Mitsui Chemicals Inc 発光体
JP2006184849A (ja) * 2004-11-30 2006-07-13 Toppan Printing Co Ltd 反射防止積層体、光学機能性フィルタ、光学表示装置および光学物品
JP2010015861A (ja) * 2008-07-04 2010-01-21 Toyobo Co Ltd 透明導電性積層フィルム
WO2011013618A1 (fr) * 2009-07-30 2011-02-03 住友化学株式会社 Elément électroluminescent organique
JP2011138135A (ja) * 2010-01-04 2011-07-14 Samsung Corning Precision Materials Co Ltd 透明導電膜及びそれを含むディスプレイフィルタ
JP2012111225A (ja) * 2010-11-04 2012-06-14 Nitto Denko Corp 透明導電性フィルムおよびタッチパネル
JP2013016417A (ja) * 2011-07-06 2013-01-24 Canon Inc 有機発光素子、発光装置、画像形成装置、表示装置および撮像装置
JP2012160203A (ja) * 2012-04-24 2012-08-23 Japan Display East Co Ltd タッチパネル、及びこれを用いた表示装置
WO2014064939A1 (fr) * 2012-10-24 2014-05-01 コニカミノルタ株式会社 Conducteur transparent

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015025525A1 (fr) * 2013-08-23 2015-02-26 コニカミノルタ株式会社 Corps conducteur transparent
JPWO2015025525A1 (ja) * 2013-08-23 2017-03-02 コニカミノルタ株式会社 透明導電体
WO2015166850A1 (fr) * 2014-05-02 2015-11-05 コニカミノルタ株式会社 Film électroconducteur transparent
JP2016087963A (ja) * 2014-11-06 2016-05-23 Tdk株式会社 透明導電体及びタッチパネル
CN107578840B (zh) * 2014-11-06 2019-07-26 Tdk株式会社 透明导电体以及触摸屏
CN107578840A (zh) * 2014-11-06 2018-01-12 Tdk株式会社 透明导电体以及触摸屏
CN107408421A (zh) * 2015-03-26 2017-11-28 Tdk株式会社 透明导电体和触摸面板
JP2016184533A (ja) * 2015-03-26 2016-10-20 Tdk株式会社 透明導電体及びタッチパネル
EP3276634A4 (fr) * 2015-03-26 2018-12-05 TDK Corporation Conducteur transparent et panneau tactile associé
WO2016153034A1 (fr) * 2015-03-26 2016-09-29 Tdk株式会社 Conducteur transparent et panneau tactile associé
US10527873B2 (en) 2015-03-26 2020-01-07 Tdk Corporation Transparent conductor and touch panel
CN107408421B (zh) * 2015-03-26 2020-04-14 Tdk株式会社 透明导电体和触摸面板
US10510457B2 (en) 2015-12-11 2019-12-17 Tdk Corporation Transparent conductor
WO2019131145A1 (fr) 2017-12-26 2019-07-04 住友化学株式会社 Procédé de production de dispositif électronique et dispositif électronique
KR20200100734A (ko) 2017-12-26 2020-08-26 스미또모 가가꾸 가부시키가이샤 전자 디바이스의 제조 방법 및 전자 디바이스

Also Published As

Publication number Publication date
JPWO2014167835A1 (ja) 2017-02-16
JP6292225B2 (ja) 2018-03-14

Similar Documents

Publication Publication Date Title
JP6314463B2 (ja) 透明導電体
JP6292225B2 (ja) 透明導電体
JP5549216B2 (ja) 透明導電性積層体およびその製造方法ならびにタッチパネル
JP5617276B2 (ja) 透明導電性積層体及びその製造方法
JP4349794B2 (ja) 導電性を有する多層反射防止膜付透明基板の製造方法
JP6319302B2 (ja) 透明導電体及びその製造方法
WO2014064939A1 (fr) Conducteur transparent
WO2015068738A1 (fr) Corps conducteur transparent
JP2015219690A (ja) 透明導電デバイス、及び、タッチパネル
WO2015087895A1 (fr) Corps conducteur transparent
JP2016018288A (ja) 透明導電体及びタッチパネル
WO2015053371A1 (fr) Conducteur transparent
WO2015025525A1 (fr) Corps conducteur transparent
WO2016052158A1 (fr) Conducteur transparent et panneau tactile le comprenant
WO2014196460A1 (fr) Conducteur transparent et son procédé de production
WO2015125558A1 (fr) Procédé de fabrication de corps électroconducteur transparent et corps électroconducteur
JP2016146052A (ja) 透明導電体及びこれを含むタッチパネル
WO2014188683A1 (fr) Substrat d&#39;electrode de panneau tactile, panneau tactile comprenant un substrat d&#39;electrode de panneau tactile et panneau d&#39;affichage
JP2016177940A (ja) 透明導電体の製造方法
WO2015151677A1 (fr) Film conducteur transparent et procédé de fabrication d&#39;un élément conducteur transparent
WO2014181538A1 (fr) Conducteur transparent et son procédé de production
WO2015011928A1 (fr) Procédé de production d&#39;un corps conducteur transparent
WO2015125677A1 (fr) Conducteur transparent
WO2015190227A1 (fr) Procédé de fabrication de conducteur transparent
JP2016144884A (ja) 透明導電体及びこれを含むタッチパネル

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14782356

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2015511108

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 14782356

Country of ref document: EP

Kind code of ref document: A1