WO2014064939A1 - Conducteur transparent - Google Patents

Conducteur transparent Download PDF

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Publication number
WO2014064939A1
WO2014064939A1 PCT/JP2013/006276 JP2013006276W WO2014064939A1 WO 2014064939 A1 WO2014064939 A1 WO 2014064939A1 JP 2013006276 W JP2013006276 W JP 2013006276W WO 2014064939 A1 WO2014064939 A1 WO 2014064939A1
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WO
WIPO (PCT)
Prior art keywords
admittance
transparent
metal film
wavelength
layer
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PCT/JP2013/006276
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English (en)
Japanese (ja)
Inventor
一成 多田
清司 湯浅
仁一 粕谷
敏幸 木下
和央 吉田
岩垣　賢
川原　雄介
泰宏 渡辺
片倉　利恵
秀謙 尾関
貴之 飯島
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コニカミノルタ株式会社
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Publication of WO2014064939A1 publication Critical patent/WO2014064939A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02—Physical, chemical or physicochemical properties
    • B32B7/023—Optical properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/202—Conductive
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/204—Di-electric
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/40—Properties of the layers or laminate having particular optical properties
    • B32B2307/412—Transparent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
    • B32B2457/202—LCD, i.e. liquid crystal displays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
    • B32B2457/204—Plasma displays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
    • B32B2457/208—Touch screens
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means

Definitions

  • the present invention relates to a transparent conductor.
  • Transparent conductive films are used in various devices such as electrode materials for display devices such as liquid crystal displays, plasma displays, inorganic and organic EL (electroluminescence) displays, electrode materials for inorganic and organic EL elements, touch panel materials, and solar cell materials. ing.
  • a transparent conductive film As a constituent material of such a transparent conductive film, metals such as Au, Ag, Pt, Cu, Rh, Pd, Al, and Cr, In 2 O 3 , CdO, CdIn 2 O 4 , Cd 2 SnO 4 , TiO 2 , Oxide semiconductors such as SnO 2 and ZnO are known. Among these, a transparent conductive film made of an indium tin oxide (ITO) film is frequently used from the viewpoint of light transmittance and conductivity.
  • ITO indium tin oxide
  • Patent Document 1 a transparent conductive film in which Ag is arranged in a mesh shape has been proposed as a transparent conductive film replacing ITO (Patent Document 1).
  • the transparent conductive film of Patent Document 1 has an Ag mesh width of about 20 ⁇ m. Therefore, the Ag mesh is easily visible and cannot be applied to uses that require high transparency. Furthermore, although there was conduction in the mesh portion, there was no conduction in the gap portion of the mesh, and the surface electric resistance value could not be lowered sufficiently.
  • a transparent conductive film containing Ag nanowires has also been proposed (Patent Document 2).
  • the transparent conductive film has a large surface electric resistance value, and the thickness of the transparent conductive film needs to be about 200 nm. For this reason, it has been difficult to apply the transparent conductive film to uses that require flexibility.
  • Patent Document 3 it has also been proposed to use an Ag thin film as a transparent conductive film.
  • an Ag thin film it has been difficult for the Ag thin film to achieve both a low surface electric resistance value and a high light transmittance. If the thickness of the Ag thin film is increased in order to increase the surface electrical resistance value, Ag inherent reflection occurs and the light transmittance is lowered. On the other hand, if the Ag thin film is thinned in order to increase the light transmittance, sufficient conduction cannot be obtained. Further, there is a problem that plasmon absorption occurs and the transmittance of the transparent conductive film is lowered.
  • etching is generally used as a patterning method for the transparent conductive film.
  • this method has a problem that a resist pattern must be prepared or treated with an etching solution, and the process is complicated.
  • Patent Document 4 a method of forming a transparent metal film in a pattern using a photocatalyst has been proposed (Patent Document 4).
  • the photocatalyst layer formed on the substrate is irradiated with light in a pattern to change the wettability of the photocatalyst layer.
  • the liquid for forming a transparent conductive film is made to adhere in a pattern shape using the wettability difference of a light irradiation part and a non-irradiation part.
  • an object of the present invention is to provide a transparent conductor having a high light transmittance and a low surface electric resistance value.
  • the liquid for forming the transparent conductive film is likely to adhere to a region other than the desired region; there is a problem that it is difficult to form a fine pattern. there were. Therefore, it is also demanded to provide a method for producing a transparent conductor capable of forming a fine metal pattern by a simple method.
  • the first of the present invention relates to the following transparent conductor.
  • a transparent conductor in which a transparent support material, a first admittance adjusting layer, a transparent metal film, and a second admittance adjusting layer are laminated in this order, and the transparent metal film has a thickness of 15 nm or less.
  • the second of the present invention relates to the following transparent conductor.
  • the third of the present invention relates to the following transparent conductor.
  • a transparent conductor in which a transparent support material, a first admittance adjustment layer, a transparent metal film, and a second admittance adjustment layer are laminated in this order, and the first admittance adjustment layer and the second
  • the admittance adjusting layer includes a dielectric material or an oxide semiconductor material having a refractive index higher than that of light having a wavelength of 570 nm of the transparent support material, and the first admittance adjusting layer is formed on at least one surface of the transparent metal film.
  • a low refractive index layer comprising a material having a refractive index of light having a wavelength of 570 nm lower than that of the dielectric material or oxide semiconductor material included in the second admittance adjusting layer and having a thickness of 0.1 to 15 nm. Further, a transparent conductor.
  • a transparent conductor having both a low surface electric resistance value and high transparency can be obtained.
  • FIG. 4A shows a transparent conductor (transparent support material (glass substrate) / first admittance adjusting layer (TiO 2 ) / transparent metal film (Ag) / second admittance adjusting layer (TiO 2 ) / third according to the first embodiment. is a graph showing the admittance locus at a wavelength 570nm admittance adjusting layer transparent conductor comprising (SiO 2)).
  • FIG. 4B shows the transparent conductor of the first embodiment (transparent support material (glass substrate) / first admittance adjusting layer (TiO 2 ) / transparent metal film (Ag) / second admittance adjusting layer (TiO 2 ) / third. is a graph showing the relationship between the optical length and the electric field of the admittance adjustment layer transparent conductor comprising (SiO 2)).
  • FIG. 5 (a) is a graph showing an admittance locus at a wavelength of 570 nm of a transparent conductor comprising a transparent support material / transparent metal film / admittance adjusting layer, and FIG.
  • FIG. 5 (b) shows a wavelength of 450 nm of the transparent conductor, It is a figure which shows the optical admittance in wavelength 570nm and wavelength 700nm.
  • FIG. 6A is a graph showing an admittance locus at a wavelength of 570 nm of the transparent conductor (transparent support / first admittance adjusting layer / transparent metal film / transparent conductor having the second admittance adjusting layer) of the first embodiment.
  • FIG. 6B is a diagram illustrating optical admittance of the transparent conductor at a wavelength of 450 nm, a wavelength of 570 nm, and a wavelength of 700 nm.
  • FIG. 7 shows the transparent conductor of the first embodiment (transparent support material (glass substrate) / first admittance adjusting layer (TiO 2 ) / transparent metal film (Ag) / second admittance adjusting layer (TiO 2 ) / third.
  • admittance wavelength 450nm adjustment layer (SiO 2) a transparent conductor comprising) is a graph showing 570 nm, and the admittance locus in 700 nm.
  • FIG. 8 shows the transparent conductor (transparent support material (glass substrate) / underlayer (MgF 2 ) / first admittance adjustment layer (TiO 2 ) / transparent metal film (Ag) / second admittance adjustment layer of the second embodiment.
  • FIG. 9A is a graph showing the admittance locus of wavelength 570nm of the transparent conductor) with a (TiO 2).
  • FIG. 9A is a graph showing the spectral characteristics of the transparent conductor of the third aspect (transparent conductor produced in Example C-1).
  • FIG. 9B is a graph showing an optical admittance locus at a wavelength of 570 nm of the transparent conductor of the third embodiment (the transparent conductor produced in Example C-1).
  • FIG. 11 is a graph in which only the plasmon absorption rate is extracted from the absorption rate of the transparent metal film produced in Experimental Example 1.
  • FIG. 9A is a graph showing the spectral characteristics of the transparent conductor of the third aspect (transparent conductor produced in Example C-1).
  • FIG. 9B is a graph showing an optical admittance locus at a wavelength of 570 nm of the transparent conductor of the third embodiment (the transparent conductor produced in Example C-1).
  • FIG. 11 is a graph in which only the
  • FIG. 12 is a graph in which only the plasmon absorption rate is extracted from the absorption rate of the transparent metal film produced in Experimental Example 2.
  • FIG. 13 is a graph in which only the plasmon absorption rate is extracted from the absorption rate of the transparent metal film produced in Experimental Example 3.
  • FIG. 14 is a graph in which only the plasmon absorption rate is extracted from the absorption rate of the transparent metal film produced in Experimental Example 4.
  • FIG. 15A is a graph showing the spectral characteristics of the transparent conductor produced in Example A-1.
  • FIG. 15B is a graph showing an admittance locus at a wavelength of 570 nm of the transparent conductor produced in Example A-1.
  • FIG. 16A is a graph showing the spectral characteristics of the transparent conductor produced in Example A-2.
  • FIG. 16B is a graph showing an admittance locus at a wavelength of 570 nm of the transparent conductor produced in Example A-2.
  • FIG. 17A is a graph showing the spectral characteristics of the transparent conductor produced in Example A-3.
  • FIG. 17B is a graph showing an admittance locus at a wavelength of 570 nm of the transparent conductor produced in Example A-3.
  • FIG. 18A is a graph showing the spectral characteristics of the transparent conductor produced in Example A-4.
  • FIG. 18B is a graph showing an admittance locus at a wavelength of 570 nm of the transparent conductor produced in Example A-4.
  • FIG. 19A is a graph showing the spectral characteristics of the transparent conductor produced in Comparative Example A-1.
  • FIG. 19B is a graph showing an admittance locus at a wavelength of 570 nm of the transparent conductor produced in Comparative Example A-1.
  • FIG. 20A is a graph showing the spectral characteristics of the transparent conductor produced in Comparative Example A-2.
  • FIG. 20B is a graph showing an admittance locus at a wavelength of 570 nm of the transparent conductor produced in Comparative Example A-2.
  • FIG. 21A is a graph showing the spectral characteristics of the transparent conductor produced in Example A-5.
  • FIG. 21B is a graph showing an admittance locus at a wavelength of 570 nm of the transparent conductor produced in Example A-5.
  • FIG. 22A is a graph showing the spectral characteristics of the transparent conductor produced in Example A-6.
  • FIG. 22B is a graph showing an admittance locus at a wavelength of 570 nm of the transparent conductor produced in Example A-6.
  • FIG. 23 is a graph showing an admittance locus at a wavelength of 570 nm of the transparent conductor produced in Example A-7.
  • FIG. 24 is a graph showing the spectral characteristics of the transparent conductor produced in Comparative Example A-3.
  • FIG. 25A is a graph showing the spectral characteristics of the transparent conductor produced in Example B-1.
  • FIG. 25B is a graph showing admittance trajectories of the transparent conductor produced in Example B-1 at a wavelength of 450 nm, a wavelength of 570 nm, and a wavelength of 700 nm.
  • FIG. 26A is a graph showing the spectral characteristics of the transparent conductor produced in Example B-2.
  • FIG. 26B is a graph showing the admittance locus of the transparent conductor produced in Example B-2 at a wavelength of 450 nm, a wavelength of 570 nm, and a wavelength of 700 nm.
  • FIG. 27A is a graph showing the spectral characteristics of the transparent conductor produced in Example B-3.
  • FIG. 27B is a graph showing admittance trajectories of the transparent conductor produced in Example B-3 at a wavelength of 450 nm, a wavelength of 570 nm, and a wavelength of 700 nm.
  • FIG. 28A is a graph showing the spectral characteristics of the transparent conductor produced in Example B-4.
  • FIG. 28B is a graph showing an admittance locus at a wavelength of 570 nm of the transparent conductor produced in Example B-4.
  • FIG. 29A is a graph showing the spectral characteristics of the transparent conductor produced in Example B-5.
  • FIG. 29B is a graph showing an admittance locus at a wavelength of 570 nm of the transparent conductor produced in Example B-5.
  • FIG. 30A is a graph showing the spectral characteristics of the transparent conductor produced in Example B-6.
  • FIG. 30B is a graph showing admittance trajectories of the transparent conductor produced in Example B-6 at a wavelength of 450 nm, a wavelength of 570 nm, and a wavelength of 700 nm.
  • FIG. 31 is a graph showing admittance loci of the transparent conductor produced in Example B-7 at wavelengths of 450 nm, 570 nm, and 700 nm.
  • FIG. 32 is a graph showing admittance trajectories of the transparent conductor produced in Example B-8 at a wavelength of 450 nm, a wavelength of 570 nm, and a wavelength of 700 nm.
  • FIG. 33A is a graph showing the spectral characteristics of the transparent conductor produced in Comparative Example B-2.
  • FIG. 33B is a graph showing admittance trajectories of the transparent conductor produced in Comparative Example B-2 at a wavelength of 450 nm, a wavelength of 570 nm, and a wavelength of 700 nm.
  • FIG. 34A is a graph showing the spectral characteristics of the transparent conductor produced in Example C-2.
  • FIG. 34B is a graph showing an optical admittance locus at a wavelength of 570 nm of the transparent conductor produced in Example C-2.
  • FIG. 35A is a graph showing the spectral characteristics of the transparent conductor produced in Example C-3.
  • FIG. 35B is a graph showing an optical admittance locus of a transparent conductor produced in Example C-3 at a wavelength of 570 nm.
  • FIG. 36A is a graph showing the spectral characteristics of the transparent conductor produced in Example C-4.
  • FIG. 36B is a graph showing an optical admittance locus at a wavelength of 570 nm of the transparent conductor produced in Example C-4.
  • FIG. 37A is a graph showing the spectral characteristics of the transparent conductor produced in Example C-5.
  • FIG. 37B is a graph showing an optical admittance locus of the transparent conductor produced in Example C-5 at a wavelength of 570 nm.
  • FIG. 38A is a graph showing the spectral characteristics of the transparent conductor produced in Example C-6.
  • FIG. 38B is a graph showing an optical admittance locus at a wavelength of 570 nm of the transparent conductor produced in Example C-6.
  • FIG. 39A is a graph showing the spectral characteristics of the transparent conductor produced in Example C-7.
  • FIG. 39B is a graph showing an optical admittance locus at a wavelength of 570 nm of the transparent conductor produced in Example C-7.
  • FIG. 40A is a graph showing the spectral characteristics of the transparent conductor produced in Example C-8.
  • FIG. 40B is a graph showing an optical admittance locus at a wavelength of 570 nm of the transparent conductor produced in Example C-8.
  • FIG. 41A is a graph showing the spectral characteristics of the transparent conductor produced in Example C-9.
  • FIG. 41B is a graph showing an optical admittance locus of wavelength 570 nm of the transparent conductor produced in Example C-9.
  • FIG. 42A is a graph showing the spectral characteristics of the transparent conductor produced in Example C-10.
  • FIG. 42B is a graph showing an optical admittance locus at a wavelength of 570 nm of the transparent conductor produced in Example C-10.
  • FIG. 43A is a graph showing the spectral characteristics of the transparent conductor produced in Example C-11.
  • FIG. 43B is a graph showing an optical admittance locus of the transparent conductor produced in Example C-11 at a wavelength of 570 nm.
  • FIG. 44A is a graph showing the spectral characteristics of the transparent conductor produced in Example C-12.
  • FIG. 44B is a graph showing an optical admittance locus at a wavelength of 570 nm of the transparent conductor produced in Example C-12.
  • FIG. 45A is a graph showing the spectral characteristics of the transparent conductor produced in Example C-13.
  • FIG. 45B is a graph showing an optical admittance locus of wavelength 570 nm of the transparent conductor produced in Example C-13.
  • FIG. 46A is a graph showing the spectral characteristics of the transparent conductor produced in Comparative Example C-2.
  • FIG. 46B is a graph showing an optical admittance locus of a transparent conductor produced in Comparative Example C-2 at a wavelength of 570 nm.
  • It is process drawing which shows an example of the manufacturing method of the transparent conductor of this invention.
  • It is a schematic diagram which shows the irradiation pattern of the light in an Example.
  • 7 is a graph showing the transmittance, absorption rate, and transmittance of light with a wavelength of 400 nm to 800 nm of a transparent conductor of Example D-6 (when the thickness of the transparent metal film is 4 nm).
  • FIG. 7 is a graph showing the transmittance, absorption rate, and transmittance of light with a wavelength of 400 nm to 800 nm of the transparent conductor of Example D-7 (when the thickness of the transparent metal film is 5 nm).
  • FIG. 51 is an example of a schematic view of a sputtering apparatus used in the first embodiment of the method for producing a transparent conductor of the present invention.
  • 52 (A) and 52 (B) are examples of schematic views of a sputtering apparatus used in the second embodiment of the method for producing a transparent conductor of the present invention.
  • FIG. 53 is an SEM (scanning electron microscope) image of the transparent metal film produced in Example E-1 of the present invention.
  • FIG. 54 is an SEM (scanning electron microscope) image of the transparent metal film produced in Example E-2 of the present invention.
  • FIG. 55 is an SEM (scanning electron microscope) image of the transparent metal film produced in Example E-3 of the present invention.
  • FIG. 56 is an SEM (scanning electron microscope) image of the transparent metal film produced in Example E-4 of the present invention.
  • FIG. 57 is an SEM (scanning electron microscope) image of the transparent metal film produced in Comparative Example E-2 of the present invention.
  • FIG. 58 is an SEM (scanning electron microscope) image of the transparent metal film produced in Comparative Example E-3 of the present invention.
  • FIG. 59 is a timing chart of Step A and Step B in the manufacturing method of Example E-1 of the present invention.
  • FIG. 60 is a timing chart of Step A and Step B in the manufacturing method of Example E-6 of the present invention.
  • FIG. 61 is a timing chart of Step A and Step B in the manufacturing method of Example E-7 of the present invention.
  • the transparent conductor of the present invention is applicable to panels of various display elements such as a touch panel, an organic EL element, and a solar battery.
  • the transparent conductor of the present invention includes three modes having different layer configurations.
  • the transparent conductor 100 of the first embodiment includes a transparent support material 1 / first admittance adjustment layer 2 / transparent metal film 3 / second admittance adjustment layer 4, and a transparent metal film 3 has a structure sandwiched between two admittance adjusting layers 2 and 4.
  • the transparent metal film 2 is sandwiched between the two admittance adjusting layers 2 and 4 so that the optical admittance of the transparent conductor 100 is adjusted as described later. As a result, light reflection on the surface of the transparent conductor 100 is suppressed, and the light transmittance of the transparent conductor 100 is increased.
  • the transparent conductor 100 of the first aspect may include a third admittance adjusting layer (not shown) formed on the second admittance adjusting layer 4. Furthermore, the transparent conductor 100 of the first aspect may include two or more transparent metal films. Further, another admittance adjusting layer may be sandwiched between the two transparent metal films. The other admittance adjustment layer may be the same layer as the first admittance adjustment layer and the second admittance adjustment layer.
  • Transparent Support Material included in the transparent conductor can be the same as the transparent support material of various display devices.
  • Transparent support materials include glass substrates, cellulose ester resins (for example, triacetylcellulose, diacetylcellulose, acetylpropionylcellulose, etc.), polycarbonate resins (for example, Panlite, Multilon (both manufactured by Teijin Limited)), cycloolefin resins (for example, ZEONOR (manufactured by Nippon Zeon), Arton (manufactured by JSR), APPEL (manufactured by Mitsui Chemicals)), acrylic resin (for example, polymethyl methacrylate, acrylite (manufactured by Mitsubishi Rayon), Sumipex (manufactured by Sumitomo Chemical)), Polyimide, phenol resin, epoxy resin, polyphenylene ether (PPE) resin, polyester resin (eg, polyethylene terephthalate, polyethylene naphthalate), poly
  • the transparent support material is a glass substrate, triacetyl cellulose, phenol resin, epoxy resin, polyphenylene ether (PPE) resin, polyether sulfone, ABS / AS resin, MBS resin, polystyrene, methacrylic resin, Polyvinyl alcohol / EVOH (ethylene vinyl alcohol resin) and styrene block copolymer resin are preferable.
  • the transparent support material preferably has high transparency to visible light; the average transmittance of light having a wavelength of 450 to 800 nm is preferably 70% or more, more preferably 80% or more, and 85% or more. More preferably it is. When the average light transmittance of the transparent support material is 80% or more, the average light transmittance of the entire transparent conductor is particularly likely to increase.
  • the average absorption rate of light having a wavelength of 450 to 800 nm of the transparent support material is preferably 10% or less, more preferably 5% or less, and further preferably 3% or less.
  • the average light transmittance of the transparent support material is measured by making light incident from an angle inclined by 5 ° with respect to the front surface of the transparent support material.
  • the average light absorptance of the transparent support material is measured by making the light incident from the same angle as the average transmittance and measuring the average reflectivity of the transparent support material. Then, the average absorptance is calculated as 100 ⁇ (average transmittance + average reflectance). Average transmittance and average reflectance are measured with a spectrophotometer.
  • the refractive index of light with a wavelength of 510 nm of the transparent support material is preferably 1.40 to 1.95, more preferably 1.45 to 1.75, and still more preferably 1.45 to 1.70. .
  • the refractive index of light having a wavelength of 570 nm of the transparent support material is also preferably 1.40 to 1.95, more preferably 1.45 to 1.75, and still more preferably 1.45 to 1.70. It is.
  • the refractive index at each wavelength of the transparent support material is usually determined by the material of the transparent support material. The refractive index of the transparent support is measured with an ellipsometer.
  • the haze value of the transparent support material is preferably 0.01 to 2.5, more preferably 0.1 to 1.2. When the haze value of the transparent support material is 2.5 or less, the haze value of the transparent conductor is lowered. The haze value is measured with a haze meter.
  • the thickness of the transparent support material is preferably 1 ⁇ m to 20 mm, more preferably 10 ⁇ m to 2 mm.
  • the thickness of the transparent support material is 1 ⁇ m or more, the strength of the transparent support material is increased, and it is difficult to crack or tear the first admittance adjusting layer.
  • the thickness of the transparent support material is 20 mm or less, the flexibility of the transparent conductor is sufficient, and the thickness of the device using the transparent conductor can be reduced.
  • the apparatus using a transparent conductor can also be reduced in weight.
  • the first admittance adjustment layer is a layer containing a dielectric material or an oxide semiconductor material, and in this embodiment, between the transparent support material and the transparent metal film and the transparent metal film. And a layer formed adjacent to each other.
  • the refractive index of light having a wavelength of 510 nm of the first admittance adjusting layer is preferably larger than 1.5, more preferably 1.7 to 2.5, and still more preferably 1.9 to 2.5. As will be described later, when the refractive index of the first admittance adjusting layer is higher than 1.5, the light transmittance of the transparent conductor is likely to increase.
  • the refractive index of the first admittance adjusting layer is preferably larger than the refractive index of the transparent support, and the refractive index difference is preferably 0.1 to 1.1, and 0.4 to 1.0. It is more preferable that The refractive index of the first admittance adjusting layer is measured with an ellipsometer. The refractive index of the first admittance adjusting layer is adjusted by the material constituting the first admittance adjusting layer, the density of the material in the first admittance adjusting layer, and the like.
  • the refractive index of light having a wavelength of 570 nm of the material (dielectric material or oxide semiconductor material) included in the first admittance adjusting layer is preferably larger than 1.5, more preferably 1.6 to 2.5. More preferably, it is 1.7 to 2.5, and particularly preferably 1.8 to 2.5. Further, the refractive index difference between the material constituting the first admittance adjusting layer and the transparent support is preferably 0.1 to 1.1, more preferably 0.4 to 1.0.
  • the material (dielectric material or oxide semiconductor material) constituting the first admittance adjusting layer is preferably a metal oxide or a metal sulfide.
  • metal oxides or metal sulfides include TiO 2 , ITO (indium tin oxide), ZnO, ZnS, Nb 2 O 5 , ZrO 2 , CeO 2 , Ta 2 O 5 , Ti 3 O 5 , Ti 4 O.
  • the first admittance adjusting layer may contain only one kind of the metal oxide or metal sulfide or two or more kinds.
  • the thickness of the first admittance adjusting layer is preferably 10 to 150 nm, more preferably 20 to 80 nm.
  • the thickness of the first admittance adjusting layer is 10 nm or more, the optical admittance of the transparent conductor is easily adjusted sufficiently by the first admittance adjusting layer. As a result, the light transmittance of the transparent conductor is sufficiently increased.
  • the thickness of the first admittance adjusting layer is 150 nm or less, the light permeability of the transparent conductor is hardly lowered by the first admittance adjusting layer.
  • the thickness of the first admittance adjusting layer is measured with an ellipsometer.
  • the first admittance adjusting layer may be a layer formed by a general vapor deposition method such as a vacuum deposition method, a sputtering method, an ion plating method, a plasma CVD method, a thermal CVD method or the like. From the viewpoint of increasing the refractive index (density) of the first admittance adjusting layer, it is preferably a layer formed by electron beam evaporation or sputtering. In the case of the electron beam evaporation method, it is desirable to have assistance such as IAD (ion assist) in order to increase the film density.
  • IAD ion assist
  • the metal contained in the transparent metal film is not particularly limited, and may be, for example, silver, copper, gold, platinum group, titanium, chromium, or the like.
  • the transparent metal film may contain only one kind of these metals or two or more kinds.
  • the transparent metal film is preferably a film made of silver or an alloy containing 50 mass% or more of silver.
  • the transparent metal film is preferably made of silver or an alloy containing 90 at% or more of silver.
  • the transparent metal film is a layer made of a silver alloy
  • the metal combined with silver can be zinc, gold, copper, palladium, aluminum, manganese, bismuth, neodymium, or the like.
  • the sulfide resistance of the transparent metal film is increased.
  • Combining silver with gold increases salt resistance (NaCl) resistance.
  • oxidation resistance is enhanced.
  • the plasmon absorptance of the transparent metal film is preferably 15% or less, more preferably 10% or less, even more preferably 7% or less, and particularly preferably 5 in the entire wavelength range of 400 nm to 800 nm. % Or less.
  • the plasmon absorption rate in the above wavelength range is small, the visible light transmittance of the transparent conductor is increased. Further, when the plasmon absorptance is below a certain value over a part of the wavelength of 400 nm to 800 nm, the transmitted light of the transparent conductor is hardly colored.
  • the plasmon absorption rate at a wavelength of 400 nm to 800 nm of the transparent metal film is obtained in advance by preparing a metal film having no plasmon absorption and using the absorption rate of this metal film as reference data. Specifically, it is measured by the following procedure.
  • a platinum palladium film is formed to a thickness of 0.1 nm on a glass substrate using a magnetron sputtering apparatus.
  • the average thickness of platinum palladium is calculated from the film forming speed and the like of the manufacturer's nominal value of the sputtering apparatus.
  • a metal film is formed to a thickness of 20 nm by a vapor deposition machine on the substrate to which platinum palladium is adhered.
  • the thickness of the transparent metal film contained in the transparent conductor is 15 nm or less, more preferably 3 to 13 nm, and further preferably 7 to 12 nm.
  • the thickness of the transparent metal film is 15 nm or less, more preferably 3 to 13 nm, and further preferably 7 to 12 nm.
  • the thickness of the transparent metal film is 15 nm or less, the original reflection of the metal constituting the transparent metal film hardly occurs.
  • the thickness of the transparent metal film is 15 nm or less, the light permeability of the transparent conductor is easily increased by the first admittance adjusting layer and the second admittance adjusting layer, as will be described later.
  • the thickness of the transparent metal film is measured with an ellipsometer.
  • the transparent metal film may be a film formed by any method. However, in a general vapor deposition method, it is difficult to obtain a transparent metal film having a plasmon absorption rate of 15% or less and a thickness of 15 nm or less over the entire wavelength range of 400 nm to 800 nm. Therefore, the transparent metal film is preferably a film formed after previously forming growth nuclei. A method for forming the transparent metal film will be described later.
  • the second admittance adjustment layer is a layer containing a dielectric material or an oxide semiconductor material, and may be a layer disposed adjacent to the transparent metal film.
  • the material constituting the second admittance adjustment layer can be the same as the material constituting the first admittance adjustment layer.
  • the first admittance adjusting layer and the second admittance adjusting layer may be layers made of the same material or layers made of different materials.
  • the refractive index of light having a wavelength of 510 nm of the second admittance adjusting layer is preferably larger than 1.5, more preferably 1.6 to 2.5, and still more preferably 1.8 to 2.5. As will be described later, when the refractive index of the second admittance adjusting layer is higher than 1.5, reflection on the surface of the transparent conductor is easily suppressed.
  • the refractive index of the second admittance adjusting layer is also preferably larger than the refractive index of the transparent support, and the refractive index difference is preferably 0.1 to 1.1, more preferably 0.4 to 1.0.
  • the refractive index of the second admittance adjusting layer is measured with an ellipsometer.
  • the refractive index of the second admittance adjusting layer is adjusted by the material constituting the second admittance adjusting layer, the density of the material in the second admittance adjusting layer, and the like.
  • the refractive index of light having a wavelength of 570 nm of the material (dielectric material or oxide semiconductor material) included in the second admittance adjusting layer is preferably greater than 1.5, more preferably 1.6 to 2.5. More preferably, it is 1.8 to 2.5. As will be described later, when the refractive index of the material constituting the second admittance adjusting layer is greater than 1.5, the light transmittance of the transparent conductor tends to increase.
  • the difference in refractive index between the material constituting the second admittance adjusting layer and the transparent support is preferably from 0.1 to 1.1, more preferably from 0.4 to 1.0.
  • the thickness of the second admittance adjusting layer is preferably 10 to 150 nm, more preferably 20 to 80 nm. When the thickness of the second admittance adjusting layer is 10 nm to 150 nm, the light transmittance of the transparent conductor is sufficiently increased. The thickness of the second admittance adjusting layer is measured with an ellipsometer.
  • a third admittance adjustment layer may be further laminated on the second admittance adjustment layer.
  • the third admittance adjusting layer plays a role of adjusting the optical admittance of the transparent conductor or protecting the transparent conductor.
  • the refractive index of light having a wavelength of 510 nm of the third admittance adjusting layer is preferably 1.3 to 1.8, more preferably 1.35 to 1.6, and still more preferably 1.35 to 1.5. It is.
  • the refractive index of the third admittance adjusting layer is measured with an ellipsometer.
  • the refractive index of the third admittance adjusting layer is adjusted by the material constituting the third admittance adjusting layer, the density of the material in the third admittance adjusting layer, and the like.
  • the third admittance adjusting layer preferably includes a material having a refractive index lower than the refractive index of light having a wavelength of 570 nm of the dielectric material or the oxide semiconductor material included in the second admittance adjusting layer.
  • the refractive index of light having a wavelength of 570 nm of the material constituting the third admittance adjusting layer is appropriately selected according to the refractive index of the material included in the second admittance adjusting layer, and is 1.3 to 1.8. Is more preferably 1.35 to 1.6, and still more preferably 1.35 to 1.5.
  • the refractive index of the material constituting the third admittance adjusting layer is 1.35 to 1.5, the optical admittance of the transparent conductor is easily finely adjusted.
  • the refractive index of the third admittance adjusting layer is adjusted by the material constituting the third admittance adjusting layer and its density.
  • the material constituting the third admittance adjusting layer is not particularly limited as long as it is a dielectric material or an oxide semiconductor material, and examples thereof include SiO 2 , Al 2 O 3 , MgF 2 , Y 2 O 3 and the like. . From the viewpoint of finely adjusting the refractive index, the dielectric material is preferably SiO 2 or MgF 2 .
  • the thickness of the third admittance adjusting layer is preferably 10 to 150 nm, more preferably 20 to 100 nm.
  • the thickness of the third admittance adjusting layer is 10 nm or more, it is easy to finely adjust the optical admittance on the surface of the transparent conductor.
  • the thickness of the third admittance adjusting layer is 150 nm or less, the thickness of the transparent conductor is reduced.
  • the thickness of the third admittance adjusting layer is measured with an ellipsometer.
  • the transparent conductor of the first aspect includes other than the transparent support material, the first admittance adjusting layer, the transparent metal film, the second admittance adjusting layer, and the third admittance adjusting layer described above. Of layers may be included.
  • the other layer may be any layer as long as it does not affect the light transmittance of the transparent conductor; for example, between the first admittance adjusting layer and the transparent metal film, or the second admittance adjusting layer. And a transparent metal film.
  • the thickness of the other layers is preferably 15 nm or less, more preferably 10 nm or less.
  • the transparent conductor according to the first embodiment has an average absorptance of light having a wavelength of 400 nm to 800 nm of 15% or less, preferably 12% or less, more preferably 10% or less. is there. Further, the maximum value of the absorptance of light having a wavelength of 400 nm to 800 nm is 25% or less, preferably 20% or less, and more preferably 15% or less.
  • the light absorption rate of the transparent conductor can be reduced by suppressing the plasmon absorption rate of the transparent metal film and the light absorption rate of the material constituting each layer.
  • the average transmittance of light having a wavelength of 450 nm to 800 nm of the transparent conductor is preferably 50% or more, more preferably 70% or more, and further preferably 80% or more.
  • the average reflectance of light having a wavelength of 500 nm to 700 nm of the transparent conductor is preferably 20% or less, more preferably 15% or less, and further preferably 10% or less. If the average transmittance of light having the above wavelength is 50% or more and the average reflectance is 20% or less, the transparent conductor can also be applied to uses where high transparency is required.
  • the average transmittance and the average reflectance are values measured by allowing measurement light to enter the transparent conductor from an angle inclined by 5 ° with respect to the front surface of the transparent conductor.
  • the average transmittance and the average reflectance are measured with a spectrophotometer, and the average absorptance is calculated from 100 ⁇ (average transmittance + average reflectance).
  • the a * value and b * value in the L * a * b * color system of the transparent conductor are preferably within ⁇ 30, more preferably within ⁇ 5, and even more preferably within ⁇ 3.0. Particularly preferably, it is within ⁇ 2.0. If the a * value and b * value in the L * a * b * color system are within ⁇ 30, the transparent conductor is observed as colorless and transparent. The a * value and b * value in the L * a * b * color system are measured with a spectrophotometer.
  • the surface electrical resistance of the transparent conductor is preferably 50 ⁇ / ⁇ or less, more preferably 30 ⁇ / ⁇ or less.
  • a transparent conductor having a surface electric resistance value of 50 ⁇ / ⁇ or less can be applied to a transparent conductive panel for a capacitive touch panel.
  • the surface electrical resistance value of the transparent conductor is adjusted by the thickness of the transparent metal film and the like.
  • the surface electrical resistance value of the transparent conductor can be measured in accordance with, for example, JIS K7194, ASTM D257, and the like. It can also be measured by a commercially available surface electrical resistivity meter.
  • the difference between the haze value H sub haze values and transparency support transparent conductor is preferably less than 0.9, more preferably 0.5 or less.
  • the haze value of the transparent conductor is measured with a haze meter.
  • the transparent conductor 200 of the second embodiment includes a transparent support material 11 / underlayer 15 / first admittance adjustment layer 12 / transparent metal film 13 / second admittance adjustment layer 14.
  • a third admittance adjustment layer (not shown) may be further laminated on the second admittance adjustment layer 14.
  • the optical admittance of the transparent conductor 200 is adjusted by the two admittance adjusting layers 12 and 14 and the underlayer 15 as described later. As a result, light reflection on the surface of the transparent conductor 200 is suppressed, and the light transmittance of the transparent conductor 200 is increased.
  • the transparent conductor of the second aspect may include two or more transparent metal films; and another admittance adjusting layer may be sandwiched between the two transparent metal films.
  • the other admittance adjustment layer may be the same layer as the first admittance adjustment layer and the second admittance adjustment layer.
  • the transparent support material, the first admittance adjustment layer, the transparent metal film, the second admittance adjustment layer, and the third admittance adjustment layer included in the transparent conductor of the second aspect are the transparent support material included in the first aspect, the first Each of the one admittance adjusting layer, the transparent metal film, the second admittance adjusting layer, and the third admittance adjusting layer may be the same.
  • the underlayer is a layer formed between the transparent support material and the first admittance adjusting layer.
  • the underlayer includes one or more layers containing a dielectric material or an oxide semiconductor material (hereinafter also referred to as “low refractive index layer”) having a refractive index lower than the refractive index of light having a wavelength of 570 nm of the transparent support material.
  • low refractive index layer a dielectric material or an oxide semiconductor material having a refractive index lower than the refractive index of light having a wavelength of 570 nm of the transparent support material.
  • the refractive index of light having a wavelength of 570 nm of the dielectric material or oxide semiconductor material contained in the low refractive index layer is appropriately selected according to the refractive index of the transparent support material, but is preferably 1.8 or less, More preferably, it is 1.30 to 1.6, and still more preferably 1.35 to 1.5.
  • the underlayer may be a single layer composed of only one layer (low refractive index layer) or a laminate of 2 to 10 layers or more. From the viewpoint of the cost and production efficiency of the transparent conductor, the underlayer is preferably a single layer body.
  • the material constituting the low refractive index layer is appropriately selected according to the refractive index of the transparent support material.
  • the thickness of the low refractive index layer is appropriately set based on optical admittance described later, but is preferably 10 to 500 nm, and more preferably 30 to 250 nm. When the thickness of the low refractive index layer is 10 nm or more, the reflection suppressing effect of the transparent metal film can be sufficiently obtained.
  • the underlayer may include other layers including a material having a higher refractive index than the low refractive index layer.
  • the material constituting the other layers included in the base layer is not particularly limited, for example TiO 2, ITO, ZnO, ZnS , Nb 2 O 5, ZrO 2, CeO 2, Ta 2 O 5, Ti 3 O 5, Ti 4 O 7 , Ti 2 O 3 , TiO, SnO 2 , La 2 Ti 2 O 7 and the like.
  • the other layer may contain only one kind of these materials or two or more kinds. When the underlayer includes other layers, the optical admittance of the underlayer described later is adjusted.
  • the thickness of other layers contained in the underlayer is appropriately set based on optical admittance described later, but is preferably 10 to 150 nm, more preferably 20 to 80 nm. When the thickness of the other layer is 10 nm or more, the effect of adjusting the optical admittance is easily obtained.
  • the total thickness of the underlayer is preferably 10 to 1000 nm, more preferably 10 to 500 nm, and still more preferably 30 to 350 nm from the viewpoint of the flexibility and spectral characteristics of the transparent conductor.
  • the low refractive index layer and other layers included in the underlayer are usually formed by a general vapor deposition method such as a vacuum deposition method, a sputtering method, an ion plating method, a plasma CVD method, or a thermal CVD method. It can be a layer. From the viewpoint of easiness of film formation, the low refractive index layer and other layers are preferably layers formed by electron beam evaporation or sputtering.
  • the transparent conductor of the second embodiment includes the above-mentioned transparent support material, underlayer, first admittance adjusting layer, transparent metal film, second admittance adjusting layer, and third admittance adjusting layer.
  • other layers may be included.
  • the other layer may be any layer as long as it does not affect the light transmittance of the transparent conductor; for example, between the first admittance adjusting layer and the transparent metal film, or the second admittance adjusting layer.
  • a transparent metal film is preferably 15 nm or less, more preferably 10 nm or less.
  • the transparent conductor of the second embodiment has an average absorptance of light having a wavelength of 400 nm to 800 nm of 10% or less, preferably 8% or less, more preferably 7%. It is as follows. Further, the maximum value of the absorptance of light having a wavelength of 450 nm to 800 nm is 15% or less, preferably 10% or less, and more preferably 9% or less.
  • the average light absorption rate of the transparent conductor can be reduced by suppressing the plasmon absorption rate of the transparent metal film and the light absorption rate of the material constituting each layer.
  • the average transmittance of light having a wavelength of 450 nm to 800 nm of the transparent conductor is preferably 50% or more, more preferably 70% or more, and further preferably 80% or more.
  • the average reflectance of light having a wavelength of 500 nm to 700 nm of the transparent conductor is preferably 20% or less, more preferably 15% or less, and further preferably 10% or less. If the average transmittance of light having the above wavelength is 50% or more and the average reflectance is 20% or less, the transparent conductor can also be applied to uses where high transparency is required.
  • the average transmittance and the average reflectance are values measured by allowing measurement light to enter the transparent conductor from an angle inclined by 5 ° with respect to the front surface of the transparent conductor.
  • the average transmittance and the average reflectance are measured with a spectrophotometer, and the average absorptance is calculated from 100 ⁇ (average transmittance + average reflectance).
  • the a * value and b * value in the L * a * b * color system of the transparent conductor are preferably within ⁇ 30, more preferably within ⁇ 5, and even more preferably within ⁇ 3.0. Particularly preferably, it is within ⁇ 2.0. If the a * value and b * value in the L * a * b * color system are within ⁇ 30, the transparent conductor is observed as colorless and transparent. The a * value and b * value in the L * a * b * color system are measured with a spectrophotometer.
  • the surface electrical resistance of the transparent conductor is preferably 50 ⁇ / ⁇ or less, more preferably 30 ⁇ / ⁇ or less.
  • a transparent conductor having a surface electric resistance value of 50 ⁇ / ⁇ or less can be applied to a transparent conductive panel for a capacitive touch panel.
  • the surface electrical resistance value of the transparent conductor can be adjusted by the thickness of the transparent metal film or the like.
  • the surface electrical resistance value of the transparent conductor can be measured in accordance with, for example, JIS K7194, ASTM D257, and the like. It can also be measured by a commercially available surface electrical resistivity meter.
  • the difference between the haze value H sub haze values and transparency support transparent conductor (haze degradation) is preferably less than 0.9, more preferably 0.5 or less.
  • the haze value of the transparent conductor is measured with a haze meter.
  • the transparent conductor 300 of the third embodiment includes a transparent support material 21 / first admittance adjustment layer 22 / low refractive index layer 26 / transparent metal film 23 / low refractive index layer 27 / second.
  • An admittance adjustment layer 24 is included.
  • the low refractive index layers 26 and 27 are laminated on both sides of the transparent metal film 23, but the low refractive index layer is adjacent to only one surface of the transparent metal film 23. May be laminated.
  • a third admittance adjustment layer (not shown) may be further laminated on the second admittance adjustment layer 24.
  • the thickness of the transparent metal film is thick, the reflection of the metal constituting the transparent metal film occurs, and the light transmittance of the transparent conductor is lowered.
  • the thickness of the transparent metal film is reduced in order to suppress reflection of the transparent metal film, the surface roughness of the film tends to be rough. As a result, plasmon absorption occurs, and the light transmittance of the transparent conductor is lowered.
  • the local plasmon absorption cross section is expressed by the following equation.
  • the lower the refractive index of the medium in contact with the transparent metal film the lower the plasmon absorption.
  • a low refractive index layer having a relatively low refractive index is laminated adjacent to the transparent metal film. Therefore, plasmon absorption of the transparent metal film is suppressed, and the light transmittance of the transparent conductor is increased.
  • the transparent conductor of the third aspect may include two or more transparent metal films; and further, another admittance adjusting layer may be sandwiched between the two transparent metal films. Good.
  • the other admittance adjustment layer may be the same layer as the first admittance adjustment layer and the second admittance adjustment layer.
  • the transparent support material, the first admittance adjustment layer, the transparent metal film, the second admittance adjustment layer, and the third admittance adjustment layer included in the transparent conductor of the third aspect are the transparent support material and the first admittance of the first aspect.
  • the adjustment layer, the transparent metal film, the second admittance adjustment layer, and the third admittance adjustment layer may be the same.
  • the low refractive index layer is a layer adjacent to the transparent metal film and suppresses plasmon absorption of the transparent metal film as described above.
  • the low refractive index layer includes a material having a refractive index lower than the refractive index of light having a wavelength of 570 nm of the dielectric material or the oxide semiconductor material contained in the first admittance layer and the second admittance layer.
  • the refractive index of the material included in the low refractive index layer is 0.2 or more lower than the refractive index of the dielectric material or oxide semiconductor material included in the first admittance layer and the second admittance layer, respectively. Is preferable, and 0.4 or more is more preferable.
  • the refractive index of the material constituting the low refractive index layer is preferably 1.8 or less, more preferably 1.30 to 1.6, particularly preferably in view of the plasmon suppressing effect described above. 1.35 to 1.5.
  • the refractive index of the low refractive index layer is usually adjusted by the refractive index of the material constituting the low refractive index layer and the density of the material constituting the low refractive index layer.
  • the material constituting the low refractive index layer is appropriately selected according to the desired refractive index.
  • the materials constituting the low refractive index layer are MgF 2 , SiO 2 , Y 2 O 3 , LaAlO 3 , CaF 2 , NaF, Na 3 AlF 6 , LiF, LaF 3 , NdF 3 , Al 2 O 3 , CeF 3 , among others. , PbF 2 , MgO, and ThO 2 are preferable, and MgF 2 and SiO 2 are particularly preferable from the viewpoint that the refractive index is low. Only one of these materials may be included in the low refractive index layer, or two or more of these materials may be included.
  • the thickness of the low refractive index layer is preferably a thickness that does not hinder the effect of adjusting the optical admittance by the first admittance adjusting layer and the second admittance adjusting layer described later.
  • the thickness of the low refractive index layer is 0.1 to 15 nm, preferably 1 to 10 nm, and more preferably 3 to 8 nm.
  • the low refractive index layer can be a layer formed by a general vapor deposition method such as a vacuum deposition method, a sputtering method, an ion plating method, a plasma CVD method, or a thermal CVD method. From the viewpoint of easiness of film formation, the low refractive index layer and other layers are preferably layers formed by electron beam evaporation or sputtering.
  • the transparent conductor of the third aspect includes the above-mentioned transparent support material, first admittance adjusting layer, low refractive index layer, transparent metal film, second admittance adjusting layer, and third admittance. Other layers may be included in addition to the adjustment layer.
  • the other layers may be any layers as long as they do not affect the light transmittance of the transparent conductor.
  • the thickness of the other layers is preferably 15 nm or less, more preferably 10 nm or less.
  • the transparent conductor of the third aspect preferably has an average absorptance of light having a wavelength of 400 nm to 800 nm of 9% or less, more preferably 8% or less, Preferably it is 7% or less. Further, the maximum value of the absorptance of light having a wavelength of 450 nm to 800 nm is preferably 15% or less, more preferably 10% or less, and further preferably 9% or less.
  • the light absorption rate of the transparent conductor can be reduced by suppressing the plasmon absorption rate of the transparent metal film and the light absorption rate of the material constituting each layer.
  • the average transmittance of light having a wavelength of 450 nm to 800 nm of the transparent conductor is preferably 50% or more, more preferably 70% or more, and further preferably 80% or more.
  • the average reflectance of light having a wavelength of 500 nm to 700 nm of the transparent conductor is preferably 20% or less, more preferably 15% or less, and further preferably 10% or less. If the average transmittance of light having the above wavelength is 50% or more and the average reflectance is 20% or less, the transparent conductor can also be applied to uses where high transparency is required.
  • the average transmittance and the average reflectance are measured by allowing measurement light to enter the transparent conductor from an angle inclined by 5 ° with respect to the front surface of the transparent conductor.
  • the average transmittance and the average reflectance are measured with a spectrophotometer, and the average absorptance is calculated from 100 ⁇ (average transmittance + average reflectance).
  • the a * value and b * value in the L * a * b * color system of the transparent conductor are preferably within ⁇ 30, more preferably within ⁇ 5, and even more preferably within ⁇ 3.0. Particularly preferably, it is within ⁇ 2.0. If the a * value and b * value in the L * a * b * color system are within ⁇ 30, the transparent conductor is observed as colorless and transparent. The a * value and b * value in the L * a * b * color system are measured with a spectrophotometer.
  • the surface electrical resistance of the transparent conductor is preferably 50 ⁇ / ⁇ or less, more preferably 30 ⁇ / ⁇ or less.
  • a transparent conductor having a surface electric resistance value of 50 ⁇ / ⁇ or less can be applied to a transparent conductive panel for a capacitive touch panel.
  • the surface electrical resistance value of the transparent conductor can be adjusted by the thickness of the transparent metal film or the like.
  • the surface electrical resistance value of the transparent conductor can be measured in accordance with, for example, JIS K7194, ASTM D257, and the like. It can also be measured by a commercially available surface electrical resistivity meter.
  • the difference between the haze value H sub haze values and transparency support transparent conductor (haze degradation) is preferably less than 0.9, more preferably 0.5 or less, more preferably 0.3 It is as follows.
  • the haze value of the transparent conductor is measured with a haze meter.
  • the reflectance R of the surface of the transparent conductor (the surface opposite to the transparent support material in the transparent conductor) is determined by the optical admittance y env of the medium on which light is incident and the equivalent admittance Y E of the surface of the transparent conductor. Determined from The medium on which light is incident refers to a member or environment that contacts the surface of the transparent conductor.
  • the relationship between the optical admittance y env of the medium and the equivalent admittance Y E of the surface of the transparent conductor is expressed by the following equation. Based on the above formula, the closer the value
  • the optical admittance y env of the medium is obtained from the ratio (H / E) of the electric field strength and the magnetic field strength, and is the same as the refractive index n env of the medium.
  • the equivalent admittance Y E is determined from the optical admittance Y of the layers constituting the transparent conductor. For example, when the transparent conductor composed of one is equivalent admittance Y E of the transparent conductor is equal to the of the layer optical admittance Y (refractive index).
  • the optical admittance Y x (E x H x ) of the laminate from the first layer to the x layer is the laminate from the first layer to the (x ⁇ 1) layer. It is represented by the product of the optical admittance Y x-1 (E x-1 H x-1 ) of the body and a specific matrix; specifically, it is obtained by the following formula (1) or formula (2).
  • the x-th layer is a layer made of a dielectric material or an oxide semiconductor material
  • the optical admittance Yx (E x H x ) of the laminate from the transparent support material to the outermost layer becomes the equivalent admittance Y E of the transparent conductor.
  • the optical admittance of the nuclear transparent conductor according to the first to third aspects will be described.
  • FIG. 4A shows the transparent conductor (transparent support material (glass substrate) / first admittance adjusting layer (TiO 2 ) / transparent metal film (Ag) of the first aspect. ) / Second admittance adjustment layer (TiO 2 ) / transparent conductor with third admittance adjustment layer (SiO 2 )).
  • the horizontal axis of the graph is the real part when the optical admittance Y is represented by x + iy; that is, x in the formula, and the horizontal axis is the imaginary part of the optical admittance; that is, y in the formula.
  • the final coordinates of the admittance locus is equivalent admittance Y E.
  • the distance between the coordinates (x E , y E ) of the equivalent admittance Y E and the admittance coordinates (1, 0) of the air is the reflectance R of the transparent conductor surface. Is proportional to That is, the closer the distance between the coordinates (x E , y E ) of the equivalent admittance Y E and the coordinates (1, 0) of the air admittance y env is, the smaller the reflectance R of the transparent conductor is.
  • the transparent conductor of the first aspect is preferably x-coordinate x E of the equivalent admittance Y E is 0.8 or more, further preferably 1.0 or more.
  • either one of x 1 and x 2 or both are adjusted to be 1.6 or more. That is, the horizontal axis coordinate of Y1 (x 1 , y 1 ) or Y2 (x 2 , y 2 ) in the admittance locus in FIG. 4A is 1.6 or more.
  • the transparent metal film generally has a large value of the imaginary part of the optical admittance, and when a transparent metal is laminated, the admittance locus greatly moves in the vertical axis (imaginary part) direction.
  • FIG. 5A shows an admittance locus of a transparent conductor having a transparent support material / transparent metal film / admittance adjusting layer in this order
  • FIG. 5B shows a wavelength of 450 nm and a wavelength of 570 nm of the transparent conductor.
  • the coordinates x 1 of the real part of the above Y1 is not a 1.6; as shown in other words FIGS. 5 (a)
  • the admittance locus of the first admittance adjustment layer hardly moves from the starting point (the admittance coordinates (about 1.5, 0) of the transparent support material)
  • the admittance locus becomes line symmetric about the horizontal axis of the graph. hard.
  • the admittance locus at a specific wavelength (570 nm in the present invention) is not line symmetric about the horizontal axis of the graph, as shown in FIG. 5B, the admittance at other wavelengths (for example, 450 nm and 700 nm). trajectory tends shake, the coordinates of the equivalent admittance Y E is less likely to be constant. Therefore, a wavelength region where the antireflection effect is not sufficient is likely to occur.
  • the transparent conductor of the first aspect transparent support / first admittance adjusting layer / transparent metal film / transparent conductor including the second admittance adjusting layer in this order
  • the coordinates x 1 of the real part of the Y1 becomes 1.6 or more.
  • the coordinates of the imaginary part of the admittance locus are largely moved in the positive direction by the first admittance adjustment layer. That is, even if the admittance trajectory moves greatly in the negative direction of the imaginary part due to the transparent metal film, the absolute value (y 2 ) of the imaginary part of Y2 is difficult to increase.
  • the admittance trajectory tends to be line symmetric about the horizontal axis of the graph. Therefore, as shown in FIG. 6B, not only the case of the wavelength of 570 nm, but also the admittance locus of the wavelength of 400 nm and 700 nm is axisymmetric about the horizontal axis of the graph, and the equivalent admittance Y E of each wavelength is The coordinates are almost the same. That is, at any wavelength, the value of the equivalent admittance Y E tends closer to 1, at any wavelength, sufficient antireflection effect is obtained.
  • FIG. 4B is a graph showing the relationship between the optical length and the electric field of the transparent conductor having the admittance locus shown in FIG.
  • the admittance of the transparent metal film Y increases.
  • the transparent metal film hardly absorbs light, and the light transmittance of the transparent conductor is increased.
  • At least one of the x 1 and / or x 2 is preferably 1.6 or more and 7.0 or less, more preferably 1.8 or more and 5.5 or less, and still more preferably 2.0. It is 3.0 or less.
  • x 1 and x 2 x 1 is particularly preferably 1.6 or more.
  • x 1 is the refractive index of the first admittance adjusting layer and is adjusted by the thickness or the like of the first admittance adjusting layer.
  • x 2 is preferably 1.3 to 5.5, and more preferably 1.5 to 3.5 or less.
  • x 2 is the refractive index and the transparent metal film is adjusted by the thickness or the like of the transparent metal film.
  • ) of the difference between x 1 and x 2 is preferably 1.5 or less, more preferably 1.0 or less, and even more preferably 0.8 or less. It is. In particular, it is preferable that m
  • FIG. 7 includes a transparent support material (glass substrate) / first admittance adjustment layer (TiO 2 ) / transparent metal film (Ag) / second admittance adjustment layer (TiO 2 ) / third admittance adjustment layer (SiO 2 ).
  • trajectory of wavelength 450nm, wavelength 570nm, and wavelength 700nm of a transparent conductor is shown.
  • the third admittance adjusting layer is formed, the value of the equivalent admittance Y E is finely adjusted, approaching the air admittance coordinates (1,0). In such a transparent conductor, at any wavelength, the value of the equivalent admittance Y E is close to admittance coordinates of air, at any wavelength, sufficient antireflection effect is obtained.
  • ) is preferably 0.9 or less, more preferably 0.6 or less, and still more preferably 0.3 or less.
  • FIG. 8 shows the transparent conductor (transparent support material (glass substrate) / underlayer (MgF 2 ) / first admittance adjustment layer (TiO 2 ) of the second aspect. ) / Transparent metal film (Ag) / transparent conductor with the second admittance adjusting layer (TiO 2 )).
  • the horizontal axis of the graph is the real part when the optical admittance Y is represented by x + iy; that is, x in the equation, and the vertical axis is the imaginary part of the optical admittance; that is, y in the equation.
  • the distance between the coordinates (x E , y E ) of the equivalent admittance Y E and the admittance coordinates (n env , 0) of the medium on which light is incident is proportional to the reflectance R of the transparent conductor surface.
  • the distance (((x E ⁇ n env ) 2 + (y E ) between the coordinates (x E , y E ) of the equivalent admittance Y E and the admittance coordinates (n env , 0) of the medium on which light is incident. 2 ) 0.5 ) is preferably less than 0.5, more preferably 0.3 or less. If the distance is less than 0.5, the reflectance R of the transparent conductor surface is sufficiently small, and the light transmittance of the transparent conductor is likely to increase.
  • the transparent support material has a value smaller than the refractive index n sub of light having a wavelength of 570 nm. That is, the coordinate (x 0 , y 0 ) on the surface of the underlayer on the first admittance adjustment layer side is on the left side of the optical admittance coordinate (n sub , 0) on the surface of the transparent support material.
  • x 0 is preferably from 0.01 or more smaller n sub Specifically, more preferably less than 0.05. Further, x 0 is preferably 0.5 to 1.70, more preferably 1.0 to 1.45. x 0 is adjusted by the refractive index and thickness of the layers contained in the base layer. For example, if the refractive index of the low refractive index layer is lower contained in the base layer, it is x 0 likely reduced.
  • the optical admittance of each member changes as the film thickness increases, and draws an arc-shaped admittance locus.
  • x a of the real part of the optical admittance to represent the maximum value of the real part of the optical admittance at x b;
  • product of x a and x b (x a ⁇ x b ) is the member Is equal to the square of the refractive index n. Accordingly, among the x a and x b, if one value is the smaller, the other value is increased, the arc of the admittance locus increases.
  • the minimum value x a of the real part of the optical admittance of the first admittance adjusting layer is n sub .
  • x-coordinate x 0 is transparent supporting surface of the first admittance adjusting layer side of the base layer becomes smaller than the x coordinate n sub optical admittance of the wood surface, the minimum value x a of the real part of the optical admittance of the first admittance adjusting layer, smaller than n sub.
  • the arc of the admittance locus of the first admittance adjustment layer becomes larger than when the base layer is not provided.
  • the values of x 1 and y 1 are larger than those in the case where the base layer is not provided.
  • the real part of the optical admittances Y1 and Y2 on the surface of the transparent metal film that is, the values of x 1 and x 2 are As the value increases, the electric field strength E decreases, and the electric field loss (light absorption) is suppressed. Therefore, even in the transparent conductor of the second aspect, the electric field loss of the transparent metal film is sufficiently suppressed, and the light transmittance of the transparent conductor is sufficiently increased.
  • the transparent conductor of the second aspect are either Meanwhile, or both of 1.8 or more, preferably 2.0 or more.
  • x 1 is preferably 1.8 or more.
  • the x 1 and x 2 is preferably 7.0 or less, more preferably 5.5 or less.
  • x 1 is the refractive index of the underlying layer, the thickness of the base layer, the refractive index of the first admittance adjusting layer and is adjusted in such a thickness of the first admittance adjusting layer.
  • x 2 is the refractive index and the transparent metal film is adjusted by the thickness or the like of the transparent metal film. For example, when the refractive index of the first admittance adjustment layer or the second admittance adjustment layer is high, or when the thickness is somewhat thick, the values of x 1 and x 2 tend to increase.
  • ) of the difference between x 1 and x 2 is preferably 1.5 or less, more preferably 1.0 or less, and even more preferably 0.8 or less. is there.
  • / x cross is preferably smaller than 0.5. Preferably it is 0.3 or less, More preferably, it is 0.2 or less.
  • the admittance locus is preferably a center line of symmetry of the horizontal axis of the graph.
  • a coordinate y 1 of the imaginary part of the Y1, the coordinate y 2 of the imaginary part of the Y2, y 1 ⁇ y It is preferable to satisfy 2 ⁇ 0.
  • is preferably less than 0.8, more preferably 0.5 or less, and still more preferably 0.3 or less. If
  • y 1 is sufficiently large.
  • the value of the imaginary part of the optical admittance of the transparent metal film is large, and the admittance locus moves greatly in the direction of the vertical axis (imaginary part). Therefore, if y 1 is too small, the absolute value of the imaginary part of the admittance coordinates becomes very large, admittance locus hardly become axisymmetric.
  • y 1 is preferably 0.5 or more, more preferably 1.0 to 5.0, and still more preferably 1.5 to 2.5.
  • y 2 described above is preferably ⁇ 1.0 to ⁇ 5.0, more preferably ⁇ 1.5 to ⁇ 2.5.
  • FIG. 9B shows optical admittance of the transparent conductor of the third aspect.
  • Transparent conductor of the third aspect transparent support material (white plate substrate) / first admittance adjusting layer (TiO 2 ) / low refractive index layer (SiO 2 ) / transparent metal film (Ag) / low refractive index layer (SiO 2 ) / Second admittance adjustment layer (TiO 2 ) / transparent conductor with third admittance adjustment layer (SiO 2 )).
  • the horizontal axis of the graph is the real part when the optical admittance Y is represented by x + iy; that is, x in the equation, and the vertical axis is the imaginary part of the optical admittance; that is, y in the equation.
  • the distance between the coordinates (x E , y E ) of the equivalent admittance Y E and the admittance coordinates (n env , 0) (not shown) of the medium on which the light is incident is the reflection on the surface of the transparent conductor. It is proportional to the rate R.
  • the distance (((x E ⁇ n env ) 2 + (y E )) between the coordinates (x E , y E ) of the equivalent admittance Y E and the admittance coordinates (n env , 0) of the medium on which light is incident. 2 ) 0.5 ) is preferably less than 0.5, more preferably 0.3 or less. If the distance is less than 0.5, the reflectance R of the transparent conductor surface is sufficiently small, and the light transmittance of the transparent conductor is likely to increase.
  • x 1 and x 2 is, if it is 1.6 or more, as described above, increases light transmission of the transparent conductor.
  • x 1 and x 2 it is preferably either one or both of not less than 1.6, more preferably 1.8 or more, more preferably Is 2.0 or more.
  • x 1 is preferably 1.6 or more.
  • the x 1 and x 2 is preferably 7.0 or less, more preferably 5.5 or less.
  • x 1 is the refractive index of the first admittance adjusting layer and is adjusted in such a thickness of the first admittance adjusting layer.
  • x 2 is the refractive index of the values and the transparent metal film x 1, is adjusted by the thickness or the like of the transparent metal film. For example, when the refractive index of the first admittance adjustment layer is high or the thickness is somewhat thick, the values of x 1 and x 2 are likely to increase.
  • ) of the difference between x 1 and x 2 is preferably 1.5 or less, more preferably 1.0 or less, and even more preferably 0.8 or less. is there.
  • / x cross is preferably smaller than 0.5. Preferably it is 0.3 or less, More preferably, it is 0.2 or less.
  • admittance locus is preferably a center line of symmetry of the horizontal axis of the graph.
  • a coordinate y 1 of the imaginary part of the Y1, the coordinate y 2 of the imaginary part of the Y2, y It is preferable to satisfy 1 ⁇ y 2 ⁇ 0.
  • is preferably less than 0.8, more preferably 0.5 or less, and still more preferably 0.3 or less. If
  • y 1 is sufficiently large.
  • the value of the imaginary part of the optical admittance of the transparent metal film is large, and the admittance locus moves greatly in the direction of the vertical axis (imaginary part). Therefore, if y 1 is too small, the absolute value of the imaginary part of the admittance coordinates becomes very large, admittance locus hardly become axisymmetric.
  • y 1 is preferably 0.2 or more, more preferably 0.3 to 1.5, and still more preferably 0.3 to 1.0.
  • y 2 described above is preferably ⁇ 0.3 to ⁇ 2.0, and more preferably ⁇ 0.6 to ⁇ 1.5.
  • the transparent metal film contained in the transparent conductor of each of the above-described embodiments is preferably formed through the following two steps. (1) Step of forming a growth nucleus (2) Step of forming a transparent metal film on the growth nucleus
  • a transparent metal film having a plasmon absorptivity of 15% or less and a thickness of 15 nm or less over the entire wavelength range of 400 nm to 800 nm is obtained. It is difficult to obtain. This is due to the following reason.
  • a transparent metal film is formed on the first admittance adjusting layer will be described as an example.
  • the material of the transparent metal film is difficult to migrate on the first admittance adjusting layer. Further, the interval between the growth nuclei is narrower than the interval between the lumps formed by migration of atoms. Therefore, when the film grows starting from this growth nucleus, a flat film is likely to be formed even if the thickness is small. That is, even if the thickness is small, conduction is obtained and a transparent metal film in which plasmon absorption does not occur is obtained.
  • the growth nucleus for forming a transparent metal film is formed on a 1st admittance adjustment layer.
  • Method (i) When forming growth nuclei by the method (i), a thin film is formed of a metal that is difficult to migrate (move) on the first admittance adjusting layer.
  • metals that can be growth nuclei include gold, platinum group, cobalt, molybdenum, titanium, aluminum, chromium, nickel, or alloys thereof.
  • a growth nucleus may be formed by using only one of these, or a growth nucleus may be formed by combining two or more kinds. Among these, it is preferable to form a growth nucleus with platinum palladium, palladium, titanium, or aluminum.
  • Platinum palladium or palladium is difficult to migrate on the photocatalyst layer, has a high affinity with the metal constituting the transparent metal film, and provides a dense and fine growth nucleus.
  • the ratio of palladium contained in platinum palladium is preferably 10% by mass or more, and more preferably 20% by mass or more. When the proportion of palladium is 10% by mass or more, dense and fine growth nuclei are easily obtained, and plasmon absorption occurring in the transparent metal film is easily suppressed.
  • Titanium, aluminum, and the like can be grown while being finely crushed with the aid of IAD or the like, so that a growth nucleus equivalent to platinum palladium or palladium can be obtained.
  • the thin film (growth nucleus) made of the above metal is formed by sputtering or vapor deposition.
  • the average thickness of the thin film (growth nucleus) is preferably 3 nm or less, more preferably 0.5 nm or less, still more preferably a monoatomic film, and particularly preferably a film in which metal atoms are attached to be separated from each other. is there.
  • the average thickness of the thin film (growth nucleus) is adjusted by the film forming speed and the film forming time.
  • the thin film (growth nucleus) is formed by a known sputtering method or vapor deposition method.
  • sputtering methods include ion beam sputtering, magnetron sputtering, reactive sputtering, bipolar sputtering, and bias sputtering.
  • the sputtering time is appropriately selected according to the average thickness of the thin film (growth nucleus) to be formed and the film formation speed.
  • the sputter deposition rate is preferably from 0.1 to 15 ⁇ / second, more preferably from 0.1 to 7 ⁇ / second.
  • examples of vapor deposition include vacuum vapor deposition, electron beam vapor deposition, ion plating, and ion beam vapor deposition.
  • the deposition time is appropriately selected according to the thin film to be formed (growth nuclei) and the deposition rate.
  • the deposition rate is preferably 0.1 to 15 ⁇ / second, more preferably 0.1 to 7 ⁇ / second.
  • Method (ii) When forming growth nuclei by the method (ii), a metal layer is formed on the first admittance adjusting layer, and this metal layer is dry-etched to a desired thickness.
  • the dry etching referred to in the present invention includes reactive gas etching in which etching is performed by a chemical reaction and a method of polishing with lens paper or the like, but etching that involves physical collision of etching gas, ions, radicals, and the like. A method is preferred.
  • the metal layer is etched by an etching method involving physical collision, uniform growth nuclei are easily formed on the entire photocatalyst layer.
  • the type of the metal layer (growth nucleus) is not particularly limited as long as it is a metal having a high affinity with the metal constituting the transparent metal film.
  • the metal constituting the transparent metal film may be the same as or different from the metal; examples thereof include silver, gold, platinum group, titanium and aluminum.
  • the method for forming the metal layer is not particularly limited, and may be a vapor deposition method such as a vacuum deposition method, a sputtering method, an ion plating method, a plasma CVD method or a thermal CVD method, or a wet film formation method such as a plating method. sell.
  • the average thickness of the metal layer to be formed is preferably 3 to 15 nm, more preferably 5 to 10 nm. If the average thickness of the metal layer is less than 3 nm, the amount of metal is small and there is a possibility that sufficient growth nuclei cannot be obtained.
  • the metal layer dry etching method is not particularly limited as long as it is an etching method involving physical collision as described above, and may be ion beam etching, reverse sputter etching, plasma etching, or the like.
  • ion beam etching is particularly preferable from the viewpoint that desired unevenness can be easily formed on the etched thin film (growth nucleus).
  • the metal layer may be dry-etched after a thin film (mask) such as titanium oxide is formed on the surface of the metal layer. The mask makes it easy to obtain desired uneven growth nuclei. The mask is removed together with the metal by dry etching.
  • the average thickness of the thin film (growth nucleus) obtained by dry etching of the metal layer is preferably 3 nm or less, more preferably 2 nm or less, still more preferably 0.01 to 1 nm, and particularly preferably 0.00. It is 01 to 0.2 nm. If the thickness of the thin film (growth nucleus) is too thick, even if the growth nucleus is formed, a thin transparent transparent metal film cannot be obtained. Furthermore, the thickness of the transparent metal film formed starting from this growth nucleus is increased.
  • the average thickness of the growth nucleus is determined from the difference between the thickness of the metal layer and the etching thickness of the metal layer.
  • the etching thickness of the metal layer is the product of the etching rate and the etching time.
  • the etching rate is obtained from the time until a 50 nm thick metal layer separately prepared on a glass substrate is etched under the same conditions and the light transmittance after the etching becomes equivalent to that of the glass substrate (approximately 0 nm thickness).
  • the average thickness of the growth nucleus is adjusted by the time for dry etching.
  • the type of the vapor deposition method is not particularly limited, and may be, for example, a vacuum deposition method, a sputtering method, an ion plating method, a plasma CVD method, a thermal CVD method, or the like. Among these, the vacuum deposition method is preferable. According to the vacuum deposition method, it is easy to obtain a transparent metal film having a uniform thickness and a desired thickness.
  • transparent conductors include various types of displays such as liquid crystal, plasma, organic electroluminescence, field emission, touch panels, mobile phones, electronic paper, various solar cells, various electroluminescent dimming elements, etc. It can be preferably used for a substrate of an optoelectronic device.
  • the surface of the transparent conductor (for example, the surface opposite to the transparent support material) may be bonded to another member via an adhesive layer or the like.
  • the manufacturing method of the transparent conductor of a 1st aspect The following four processes are contained in the manufacturing method of the transparent conductor of a 1st aspect.
  • iii) Irradiating the photocatalyst layer with light in a pattern Step
  • a photocatalyst layer and a transparent metal film are optionally provided after the step (iv).
  • the transparent conductor 400 obtained by the manufacturing method includes a transparent support material 31, a photocatalyst layer 38, and a transparent metal film 33 formed in a pattern, for example, as shown in FIG.
  • a high refractive index layer (not shown) that covers the photocatalyst layer 38 and the transparent metal film 33 may be included on the transparent metal film 33.
  • the transparent support material is not particularly limited as long as it is transparent to visible light, and may be the same as the transparent support material of the transparent conductor described above.
  • the transparent support material preferably has high transparency to visible light.
  • the average transmittance of light having a wavelength of 450 to 800 nm is preferably 85% or more, more preferably 88% or more, and further preferably 90% or more.
  • the transparency of the transparent conductor is sufficiently increased.
  • the light transmittance of the transparent support material is measured with a spectrophotometer.
  • the thickness of the transparent support material is preferably 1 ⁇ m to 20 mm, more preferably 10 ⁇ m to 2 mm, and even more preferably 30 ⁇ m to 1 mm. If the thickness of the transparent support material is greater than 1 ⁇ m, the strength of the transparent support material is increased, and the transparent support material is prevented from being cracked or torn during the production of the photocatalyst layer. On the other hand, if the thickness of the transparent support material is 20 mm or less, the flexibility of the transparent conductor is high, and the weight of the transparent conductor can be reduced.
  • the photocatalyst layer contains a photocatalyst.
  • a photocatalyst is a substance that causes an oxidation / reduction reaction by irradiation with light (excitation light).
  • light excitation light
  • the photocatalyst is irradiated with light having energy larger than the energy gap between the conduction band and the valence band, electrons in the valence band are excited to generate conduction electrons and holes.
  • Various oxidation / reduction reactions are caused by the reducing power of electrons generated in the conduction band and / or the oxidizing power of holes generated in the valence band.
  • the transparent metal film is patterned using oxidation / reduction by a photocatalyst as described later.
  • the photocatalyst layer may contain only the photocatalyst, and may contain a binder together with the photocatalyst.
  • the amount of the photocatalyst contained in the photocatalyst layer is preferably 80% by mass or more, more preferably 90% by mass or more, and further preferably 95% by mass or more. If the amount of photocatalyst contained in the photocatalyst layer is 80% by mass or more, the above-described oxidation / reduction reaction is sufficiently performed.
  • the type of photocatalyst contained in the photocatalyst layer is not particularly limited, and examples thereof include titanium dioxide (TiO 2 ), zinc oxide (ZnO), tin oxide (SnO 2 ), strontium titanate (SrTiO 3 ), and tungsten oxide. (WO 3 ), bismuth oxide (Bi 2 O 3 ), iron oxide (Fe 2 O 3 ) and the like are included.
  • the photocatalyst layer may contain only one type of photocatalyst or two or more types. From the viewpoint of stability and availability, the photocatalyst is preferably titanium oxide.
  • the binder contained in the photocatalyst layer is not particularly limited as long as it can bind the photocatalyst particles and has a binding energy that is not decomposed by the oxidation / reduction reaction by the photocatalyst.
  • Examples of the binder include organopolysiloxane and the like.
  • the thickness of the photocatalyst layer is preferably 3 nm to 100 nm, more preferably 10 nm to 50 nm. If the thickness of the photocatalyst layer is 3 nm or more, the above-described oxidation / reduction reaction occurs sufficiently, so that the transparent metal film can be sufficiently patterned. On the other hand, when the thickness of the photocatalyst layer is 100 nm or less, the transparency of the photocatalyst layer is increased, and the transparency of the transparent conductor is easily increased.
  • the transparent metal film is formed in a pattern on the photocatalyst layer.
  • a region where the transparent metal film is formed is a conducting portion, and a region where the transparent metal film is not formed is an insulating portion.
  • the pattern of the transparent metal film can be a wiring pattern of various elements.
  • the transparent metal film may be a film made of the same material as the transparent metal film of the transparent conductor described above.
  • the thickness of the transparent metal film is preferably 5 to 15 nm. If the thickness of the transparent metal film is 5 nm or more, the surface electrical resistance value is sufficiently low. On the other hand, when the thickness of the transparent metal film is 15 nm or less, the original reflection of the metal hardly occurs. Therefore, the transparency of the transparent metal film is increased, and the transparent metal film is hardly visually recognized.
  • the thickness of the transparent metal film is measured with an ellipsometer or the like.
  • a high refractive index layer may be formed on the photocatalyst layer and the transparent metal film.
  • the term refractive index layer may be a layer made of the same material as the first admittance adjusting layer or the second admittance adjusting layer of the transparent conductor described above.
  • the refractive index of light having a wavelength of 510 nm of the high refractive index layer is preferably 1.8 or more, more preferably 2.0 or more, and further preferably 2.2 or more.
  • the refractive index of the high refractive index layer is 1.8 or more, the light transmittance of the transparent conductor is sufficiently increased.
  • the refractive index of the high refractive index layer is measured with an ellipsometer.
  • the thickness of the high refractive index layer is preferably 3 nm to 100 nm, more preferably 10 nm to 60 nm. When the thickness of the high refractive index layer is in the above range, the light transmittance of the transparent conductor is sufficiently increased.
  • the method for producing a transparent conductor of this embodiment includes the following four steps.
  • a transparent metal film is laminated on the photocatalyst layer (step (ii)); by light irradiation, the transparent metal film is on the photocatalyst layer side, or the photocatalyst layer is on the transparent metal film side. Electrons are moved (step (iii)). Thereby, the metal atom on the surface of the transparent metal film in contact with the photocatalyst is ionized, and the adhesion between the transparent metal film and the photocatalyst layer is lowered. Therefore, in the step (iv), the transparent metal film in the desired region; that is, the region irradiated with light can be easily peeled off, and a fine pattern can be formed.
  • a photocatalyst layer 38 containing a photocatalyst is formed on the transparent support material 31.
  • the film formation method of the photocatalyst layer is not particularly limited, and may be a wet film formation method or a dry film formation method.
  • the photocatalyst layer 38 is formed on the entire surface of the transparent support material 31, but there may be a region where the photocatalyst layer 38 is not formed as necessary.
  • the composition for forming a photocatalyst layer in which the above-described photocatalyst or its precursor is dispersed in a solvent is applied by a spin coat method, a spray coat method, a dip coat method, a roll coat method, a dip coat method, or the like. It can be a method of drying by heating.
  • the above-mentioned binder and its precursor may be contained as needed.
  • the photocatalyst layer is a layer made of titanium dioxide
  • a sol in which amorphous titania fine particles are dispersed is applied by the above-described method, and this is baked at a crystallization temperature or higher to form a photocatalyst layer. Also good.
  • the dry film forming method may be a method of depositing the above-mentioned photocatalyst on a transparent support material by a vacuum deposition method, an ion plating method, a sputtering method, a plasma CVD method, a thermal CVD method, or the like.
  • the transparent metal film 33 is formed on the photocatalyst layer 38 described above.
  • the method for forming the transparent metal film is not particularly limited, and may be a wet film forming method or a dry film forming method.
  • the wet film formation method may be, for example, a method of electroless plating the above-described metal.
  • the dry film forming method may be a method of forming a metal film by a vacuum deposition method, an ion plating method, a sputtering method, a plasma CVD method, a thermal CVD method, or the like.
  • the vacuum deposition method is preferable. According to the vacuum deposition method, it is easy to obtain a transparent metal film having a uniform thickness and a desired thickness. In addition, since the film is formed under vacuum, it is difficult for foreign matter to enter the transparent metal film.
  • the transparent metal film it is particularly preferable to form growth nuclei before forming the transparent metal film.
  • the transparent metal film is formed after the growth nuclei are formed, a transparent metal film having good conductivity can be obtained even if the thickness is small. Also, according to this method, plasmon absorption is unlikely to occur even if the transparent metal film is thin.
  • the method for forming the transparent metal film after forming the growth nucleus may be the same method as the method for forming the transparent metal film of the transparent conductor described above.
  • the light irradiation to the photocatalyst layer 38 may be performed from the transparent metal film 33 side or from the transparent support material 31 side. Both the transparent metal film 33 and the transparent support material 31 have high light transmittance. Therefore, the photocatalyst is sufficiently excited regardless of which direction the light is irradiated.
  • the method of irradiating the light 111 in a pattern is not particularly limited; as shown in FIG. 47 (c), a method of irradiating light through the mask 112 may be used. A method of irradiating the pupil in a line shape may be used.
  • the light to be irradiated may be light having a wavelength that can excite the photocatalyst, and is determined by the type of the photocatalyst.
  • the photocatalyst is titanium oxide (TiO 2 )
  • it can be light with a wavelength of 380 nm.
  • Examples of such light sources include various mercury lamps, metal halide lamps, xenon lamps, excimer lamps, ultraviolet lamps, laser light sources such as excimer lasers and YAG lasers.
  • the amount of light applied to the photocatalyst layer is preferably 50 to 500,000 J / cm 2 , more preferably 100 to 100,000 J / cm 2 , and further preferably 500 to 10,000 J / cm 2 .
  • the transparent metal film is sufficiently ionized, and the transparent metal film can be sufficiently removed in the step (iv) described later. From the viewpoint of production efficiency, the irradiation time is preferably short.
  • This step may be performed by causing light (excitation light) to enter the apparatus for forming the transparent metal film described above. Moreover, when the apparatus has a load lock unit, this step may be performed in the load lock unit. Thereby, it can suppress that a foreign material adheres to a transparent metal film.
  • the method for peeling the transparent metal film is not particularly limited as long as the transparent metal film can be peeled only in a desired region.
  • a method of spraying an inert gas on the transparent metal film a method of immersing the transparent metal film in a solution, a method of tilting the transparent metal film to peel off by its own weight, a method of rubbing the transparent metal film, and the like can be used.
  • vibration or impact may be applied to the light irradiation region, or a gas that reacts only with the transparent metal film ionized by the photocatalyst may be contacted.
  • step (V) High Refractive Index Layer Film Formation Step
  • a high refractive index layer is formed so as to cover the transparent metal film and the photocatalyst layer. May be.
  • the high refractive index layer is formed, the surface reflection of the transparent conductor is suppressed, and the light transmittance of the transparent conductor is increased.
  • the film forming method of the high refractive index layer is not particularly limited, and may be a wet film forming method or a dry film forming method.
  • the wet film-forming method is a method for forming a high refractive index layer in which the above-described highly refractive material or a precursor thereof is dispersed in a solvent, spin coating method, spray coating method, dip coating method, roll coating method, It may be applied by a dip coating method or the like;
  • the above-mentioned binder and its precursor may be contained as necessary.
  • the dry film forming method may be a method of depositing the above-described highly refractive material on a transparent support material by a vacuum deposition method, an ion plating method, a sputtering method, a plasma CVD method, a thermal CVD method, or the like.
  • the transparent conductor obtained by the above-mentioned method includes various types of displays such as liquid crystal, plasma, organic electroluminescence, field emission, touch panels, mobile phones, electronic paper, and various solar cells. It can be preferably used for transparent electrodes, transparent circuits and transparent wirings of various optoelectronic devices such as various electroluminescence light control elements.
  • the manufacturing method of the transparent conductor of 2nd aspect is a manufacturing method of the transparent conductor which has a transparent support material and the transparent metal film formed on the transparent support material. It is. In addition to the transparent support material and the transparent metal film, the transparent conductor may include other layers as necessary.
  • the manufacturing method of this aspect includes the following two steps.
  • Process B for reverse sputtering the transparent metal film In the manufacturing method of this aspect, the process A and the process B may be performed simultaneously (first form), or the process A and the process B may be performed alternately (second form).
  • a transparent metal film is formed on a transparent support material by a general sputtering method
  • plasma is generated between the transparent support material and the target material to sputter the target material. Then, the sputtered particles that are repelled from the surface of the target material are deposited on a transparent support material to obtain a transparent metal film.
  • the transparent metal film is reverse-sputtered simultaneously with the formation of the transparent metal film or after partially forming the transparent metal film.
  • the transparent metal film is reverse sputtered at the initial stage of film formation, a part of the transparent metal film is scraped off by ion collision. Thereby, fine irregularities are formed in the transparent metal film.
  • the metal film is finely crushed by the collision of ions, and fine metal particles (growth nuclei) adhere to the entire surface of the transparent support material. If there are growth nuclei on the transparent support material, the sputtered particles deposited on the transparent support material are difficult to migrate. Furthermore, the growth nuclei produced by the method have a narrow interval between adjacent growth nuclei. Therefore, films that grow from the growth nucleus as a starting point are easily connected.
  • a transparent metal film that is sufficiently electrically conductive even when the thickness is small and hardly causes plasmon absorption can be obtained. Further, since the transparent metal film is thin, absorption of the metal itself is difficult to occur.
  • Step A a step of forming a transparent metal film on the transparent support material by a sputtering method
  • a reverse metal sputtering of the transparent metal film are performed.
  • a process (process B) is performed simultaneously.
  • the process A and the process B are performed simultaneously as long as at least a part of the process A and a part of the process B are performed at the same time, and it is not always necessary to match the start timing and the end timing of both processes.
  • the step of forming the transparent metal film is preferably performed continuously from the start of film formation to the end of film formation from the viewpoint of the film formation efficiency of the transparent metal film.
  • the step of reverse sputtering the transparent metal film can be performed in an arbitrary period from the start to the end of the formation of the transparent metal film.
  • the process B may be performed over the entire period from the start to the end of the process A; the process B may be performed once or a plurality of times only during a partial period from the start to the end of the process A. Good.
  • the step of reverse sputtering the transparent metal film is particularly preferably performed at least in the initial stage of forming the transparent metal film.
  • the transparent metal film is finely crushed by argon ions or the like, and growth nuclei are formed on the entire surface of the transparent support material. Then, a transparent metal film grows from the growth film as a starting point; a film that is smooth and has little plasmon absorption is obtained even if it is thin.
  • step B it is preferable to perform the step B when the thickness of the transparent metal film formed on at least the transparent support material is 3 nm or less; the step B is started simultaneously with the start of the step A, and the transparent metal film More preferably, step B is continued until the thickness of the film becomes 3 nm or more.
  • step B is continued until the thickness of the film becomes 3 nm or more.
  • the manufacturing method of the first embodiment can be performed by a sputtering apparatus capable of generating plasma on the transparent support material side and the target material side, respectively.
  • An example of the sputtering apparatus 600 used for the manufacturing method of the first embodiment is shown in FIG.
  • the sputtering apparatus 600 includes a vacuum chamber 601, a substrate holder 602 for holding the transparent support material 41 disposed in the vacuum chamber 601, and a vacuum chamber 601. And a target holder 604 for holding the target material 603.
  • the substrate holder 602 and the target holder 604 are independently connected to the substrate side power source 605 and the target side power source 606, respectively.
  • the vacuum chamber 601 is connected to a gas pipe 607 for introducing an inert gas and a vacuum pump (not shown) for adjusting the degree of vacuum in the vacuum chamber.
  • Process A and process B are performed by setting the transparent support material 41 on the substrate holder 602 in the vacuum chamber 601 and setting the target material 603 for forming the transparent metal film on the target holder 604.
  • the target material 603 for forming the transparent metal film on the target holder 604.
  • only one type of target material 603 is disposed, but two or more types of target materials 603 may be disposed, and the resulting transparent metal film may be used as an alloy.
  • an inert gas is introduced into the vacuum chamber 601 from the gas pipe 607.
  • the type of the inert gas is not particularly limited, but is usually argon gas.
  • a voltage is applied to the target holder 604 from the target-side power source 606 to generate plasma on the surface of the target material 603. Then, the target material 603 is repelled by the generated argon ions and the like, and the target material is deposited on the transparent support material 41 to form a transparent metal film (step A).
  • the current passed through the target holder 604 may be direct current (DC) or high frequency current (RF).
  • a voltage is also applied to the substrate holder 602 from the substrate-side power source 605 to generate plasma on the surface of the transparent support material 41. Then, the transparent metal film formed on the transparent support material 41 is reverse sputtered (etched) by the generated argon ions or the like. Since the transparent support material 41 is usually an insulator, the current passed through the substrate holder 602 is usually a high frequency current (RF).
  • RF high frequency current
  • the distance between the transparent support material 41 and the target material 603 in the vacuum chamber 601 is preferably 1 to 500 mm, and more preferably 40 to 150 mm. In particular, when the distance is 150 mm or less, the target material repelled by argon atoms or the like is efficiently deposited on the transparent support material 41.
  • the power applied to the substrate holder 602 is made smaller than the power applied to the target holder 604. That is, the intensity of the plasma generated on the transparent support material 41 side is made lower than the intensity of the plasma generated on the target material 603 side.
  • the speed at which the transparent metal film is scraped off by reverse sputtering (etching) is made slower than the speed at which the target material is deposited on the transparent support material 41, and the target particles are deposited little by little on the transparent support material 41.
  • the ratio of the power applied to the substrate holder 602 to the power applied to the target holder 604 is appropriately adjusted according to the type of the sputtering apparatus 600 and the distance between the target material 603 and the transparent support material 41. Specifically, the average absorption rate (reference value) of light having a wavelength of 400 to 800 nm of the transparent metal film produced by performing only the process A, and the wavelength of 400 to 800 nm of the transparent metal film produced by performing the process A and the process B. The average absorption rate of light at 800 nm is compared. And the ratio of the electric power applied to the board
  • the average light absorptance of the transparent metal film is measured by the following method.
  • the average absorptance of a separately prepared transparent support material is calculated in the same manner, and this is used as reference data.
  • (Iii) The reference data is subtracted from the average absorption rate of the transparent conductor, and this is used as the average absorption rate of the transparent metal film.
  • the film forming rate of the transparent metal film in the manufacturing method of the first embodiment is preferably 0.01 to 4 nm / s, more preferably 0.2 to 2 nm / s.
  • the film forming speed of the transparent metal film is a value obtained by dividing the final thickness of the transparent metal film by the total time for performing the process A.
  • the film forming speed of the transparent metal film is adjusted by the electric power applied to the target holder 604 and the substrate holder 602 described above.
  • the thickness of the transparent metal film formed in the first form is preferably 15 nm or less, more preferably 3 to 13 nm, and further preferably 5 to 12 nm.
  • the thickness of the transparent metal film is measured with a film thickness meter or an ellipsometer using a crystal resonator.
  • the target material 603 for forming the transparent metal film is not particularly limited, and may be silver, copper, gold, platinum group, titanium, chromium, or the like.
  • the target material 603 may include only one type of metal or two or more types.
  • the target material 603 is preferably silver, an alloy containing 90 at% or more of silver, or pure silver.
  • the metal combined with silver can be zinc, gold, copper, palladium, aluminum, manganese, bismuth, neodymium, or the like.
  • the resulting transparent metal film has improved sulfidation resistance.
  • the resulting transparent metal film has improved salt resistance (NaCl) resistance.
  • the oxidation resistance of the obtained transparent metal film is increased.
  • the transparent support material 41 is not particularly limited as long as it is a material having high transparency to visible light.
  • the transparent support material 41 can be the same as the transparent support material of the transparent conductor described above.
  • the transparent support material 41 may be a laminate of the resin film and a layer made of a dielectric material or an oxide semiconductor material. In this case, it is preferable to form a transparent metal film on the layer made of the dielectric material or the oxide semiconductor material of the transparent support material 41.
  • a layer made of a dielectric material or an oxide semiconductor material is present on the surface of the transparent support material 41, the transparent support material 41 is hardly damaged when the transparent metal film is reverse-sputtered. Further, when a layer made of a dielectric material or an oxide semiconductor material is present on the transparent support material 41, reflection of light on the surface of the transparent conductor is easily suppressed.
  • the refractive index of light having a wavelength of 570 nm of the dielectric material or the oxide semiconductor material is preferably larger than 1.5, more preferably 1.6 to 2.5, and still more preferably 1.8 to 2.5. is there.
  • the refractive index of light is 1.5 or more, reflection of light on the surface of the transparent metal film is easily suppressed.
  • the dielectric material or oxide semiconductor material is preferably a metal oxide or metal sulfide.
  • the metal oxide or metal sulfide may be the same as the metal oxide or metal sulfide contained in the first admittance layer of the transparent conductor.
  • the transparent support material 41 preferably has high transparency to visible light; the average transmittance of light having a wavelength of 450 to 800 nm is preferably 70% or more, more preferably 80% or more, and 85% or more. More preferably. If the average light transmittance of the transparent support material 41 is 80% or more, the light transmittance of the entire transparent conductor is likely to be increased. On the other hand, the average absorptance of light having a wavelength of 450 to 800 nm of the transparent support material 41 is preferably 10% or less, more preferably 5% or less, and further preferably 3% or less.
  • the average transmittance of the transparent support material 41 is a value measured by making measurement light incident from an angle inclined by 5 ° with respect to the front surface of the transparent support material 41.
  • the haze value of the transparent support material 41 is preferably 0.01 to 2.5, more preferably 0.1 to 1.2.
  • the haze value of the transparent conductor obtained can be suppressed as the haze value of the transparent support material 41 is 2.5 or less.
  • the haze value is measured with a haze meter.
  • the thickness of the transparent support material 41 is preferably 1 ⁇ m to 20 mm, more preferably 10 ⁇ m to 2 mm.
  • the thickness of the transparent support material is 1 ⁇ m or more, the transparent support material 41 is difficult to break when the transparent metal film is formed.
  • the thickness of the transparent support material 41 is 20 mm or less, the flexibility of the transparent conductor is easily increased, and the thickness of the device using the transparent conductor can be reduced.
  • the apparatus using a transparent conductor can also be reduced in weight.
  • a step of forming a transparent metal film on the transparent support material by a sputtering method (Step A) and a film formation on the transparent support material are performed.
  • the process of reverse sputtering the transparent metal film (process B) is performed alternately.
  • the transparent metal film formed in the process A is finely crushed by argon ions or the like, and growth nuclei are formed on the entire surface of the transparent support material.
  • the transparent metal film is formed again in the process A, the transparent metal film grows from the growth film as a starting point; even if it is thin, a smooth film with little plasmon absorption is obtained.
  • step A, step B, and step A may be performed, and step A, step B, step A, step B, and so on may be repeated for a short time.
  • at least one of the steps B is a step of setting the thickness of the transparent metal film having the thickness X to a thickness Y of less than 3 nm, and a step of setting the thickness Y to 95% or less of the thickness X. It is preferable.
  • the ratio of the thickness Y to the thickness X is more preferably 92% or less, and still more preferably 88% or less.
  • the transparent metal film is sufficient. When broken up, fine growth nuclei are formed. Further, if the thickness Y at this time is less than 3 nm, the size of the growth nucleus becomes sufficiently small, and the thickness of the finally obtained transparent metal film becomes thin.
  • the thickness X of the transparent metal film before the start of the above process B is measured with a film thickness meter or an ellipsometer using a crystal resonator. It can also be calculated from the deposition rate of the transparent metal film. The film formation rate is obtained separately from the time required for producing a transparent metal film of 50 nm on a glass substrate under the same conditions as in step A.
  • the thickness Y of the transparent metal film after completion of the process B is obtained from the difference between the thickness X of the transparent metal film before the start of reverse sputtering and the thickness of the film reduced by reverse sputtering.
  • the thickness of the film reduced by reverse sputtering can be obtained by the product of the etching rate during reverse sputtering and the reverse sputtering time.
  • the etching rate is separately reverse sputtered on a glass substrate under the same conditions as in process B on a 50 nm thick transparent metal film manufactured under the same conditions as in process A, and the light transmittance after reverse sputtering becomes equivalent to that of the glass substrate. It is determined from the time until (approximately thickness 0 nm).
  • a transparent metal film is formed on a transparent support material by sputtering (step A).
  • the target material and transparent support material used in the second form can be the same as the target material and transparent support material used in the first form.
  • the apparatus for forming the transparent metal film is not particularly limited, and may be a sputtering apparatus capable of generating plasma on the transparent support material side and the target material side used in the first embodiment.
  • a general high-frequency sputtering apparatus or the like can also be used.
  • a transparent support material 41 is placed on a substrate holder 602 in a vacuum chamber 601 and transparent.
  • a target material 603 for forming a metal film is placed on the target holder 604. Note that in the sputtering apparatus 600 shown in FIG. 52A, only one type of target material 603 is arranged, but two or more types of target materials 603 may be arranged, and the resulting transparent metal film may be used as an alloy.
  • an inert gas is introduced into the vacuum chamber 601 from the gas pipe 607.
  • the type of the inert gas is not particularly limited, but is usually argon gas.
  • a voltage is applied to the target holder 604 from the target-side power source 606 to generate plasma 608 on the surface of the target material 603. Then, the target material 603 is repelled by the generated argon ions and the like, and the target material is deposited on the transparent support material 41 to form a transparent metal film.
  • the thickness of the transparent metal film after completion of the first step A is preferably 0.1 to 3 nm, more preferably 0.1 to 2 nm, still more preferably 0.1 to 1 nm, and particularly preferably. Is 0.1 to 0.5 nm.
  • the thickness of the transparent metal film is adjusted by the target power and sputtering time. The thickness of the transparent metal film is measured with a film thickness meter or an ellipsometer using a crystal resonator.
  • the transparent metal film formed in step A is reverse sputtered (step B).
  • the reverse sputtering (process B) of the transparent metal film can be performed by the same sputtering apparatus 600 as in process A.
  • a voltage is applied to the substrate holder 602 from the substrate-side power source 605 to generate plasma 608 on the surface of the transparent support material 41.
  • the transparent metal film formed in the step A is reverse sputtered with the generated argon ions or the like.
  • the transparent metal film has a thickness Y of 95% or less and a thickness Y of less than 3 nm with respect to the thickness X of the transparent metal film before reverse sputtering.
  • the metal film is preferably reverse sputtered (etched).
  • the thickness of the transparent metal film after step B is adjusted by the substrate side power and the reverse sputtering time.
  • a transparent metal film is further formed by a sputtering method (process A). Further, if necessary, the process B and the process A are repeated any number of times.
  • the second and subsequent processes A and the second and subsequent processes B may be the same as the previously performed processes A and B.
  • the final thickness of the transparent metal film formed by the production method of the second embodiment is preferably 15 nm or less, more preferably 3 to 13 nm, and further preferably 7 to 12 nm.
  • the thickness of the transparent metal film is 15 nm or less, the original reflection of the metal hardly occurs and the light transmittance of the transparent metal film increases.
  • the film forming rate of the transparent metal film in the production method of the second embodiment is preferably 0.01 to 4 nm / s, more preferably 0.1 to 3 nm / s, and still more preferably 0.2 to 2 nm / s.
  • the film forming speed of the transparent metal film is a value obtained by dividing the final thickness of the transparent metal film by the total time for performing the process A.
  • the film forming speed of the transparent metal film is adjusted by the power applied to the target holder 604 described above, the reverse sputtering time of the process B, the power applied to the substrate holder 602, and the like.
  • Steps in the manufacturing method according to the second embodiment other steps may be included as necessary in addition to the above-described steps A and B.
  • Another example of the process may be a process of forming a high refractive index layer made of a dielectric material or an oxide semiconductor material on the transparent metal film obtained by the above-described process A and process B.
  • a high refractive index layer is formed on the transparent metal film, reflection of light on the surface of the transparent metal film is easily suppressed.
  • the film formation method of the high refractive index layer is not particularly limited, and may be a general vapor deposition method such as a vacuum deposition method, a sputtering method, an ion plating method, a plasma CVD method, a thermal CVD method, or the like. At this time, in order to increase the film density of the high refractive index layer, IAD (ion assist) or the like may be performed.
  • IAD ion assist
  • the refractive index of light having a wavelength of 570 nm of the dielectric material or oxide semiconductor material for forming the high refractive index layer is preferably larger than 1.5, more preferably 1.6 to 2.5, It is preferably 1.8 to 2.5. When the refractive index of light is 1.5 or more, reflection of light on the surface of the transparent metal film is suppressed.
  • the dielectric material or oxide semiconductor material for forming the high refractive index layer is preferably a metal oxide or a metal sulfide.
  • metal oxide or metal sulfide TiO 2, ITO, ZnO, ZnS, Nb 2 O 5, ZrO 2, CeO 2, Ta 2 O 5, Ti 3 O 5, Ti 4 O 7, Ti 2 O 3 , TiO, SnO 2 , La 2 Ti 2 O 7 , IZO, AZO (Al-doped ZnO), GZO (Ga-doped ZnO), ATO (Sb-doped SnO), ICO (indium cerium oxide), and the like.
  • the thickness of the high refractive index layer is preferably 10 to 150 nm, more preferably 20 to 80 nm.
  • the thickness of the high refractive index layer is 10 nm or more, reflection on the surface of the transparent metal film is suppressed by the high refractive index layer. As a result, the light transmittance of the transparent conductor is likely to increase.
  • the thickness of the high refractive index layer is 150 nm or less, the light transmittance of the transparent conductor is hardly lowered by the high refractive index layer.
  • the thickness of the high refractive index layer is measured with an ellipsometer.
  • the average absorption rate of light having a wavelength of 400 to 800 nm of the transparent metal film of the transparent conductor obtained by the method of this embodiment is preferably 20% or less, more preferably 15% or less, and further preferably 10% or less. It is.
  • the light transmittance of a transparent conductor increases that the average absorption factor of the light of the said wavelength of a transparent metal film is 20% or less. Therefore, the transparent conductor can be applied to various uses.
  • the maximum absorption rate of light having a wavelength of 400 nm to 800 nm of the transparent metal film is preferably 30% or less, more preferably 15% or less, and further preferably 12% or less.
  • the maximum absorptance is 30% or less over the entire wavelength range of 400 nm to 800 nm, the transmitted light of the transparent conductor is difficult to be colored.
  • the average absorption rate and the maximum absorption rate of the transparent metal film are calculated by subtracting the absorption rate (reference data) of the transparent support material from the absorption rate of the transparent conductor.
  • the surface electric resistance value of the transparent conductor is preferably 200 ⁇ / ⁇ or less, more preferably 50 ⁇ / ⁇ , and further preferably 15 ⁇ / ⁇ or less.
  • a transparent conductor having a surface electric resistance value of 200 ⁇ / ⁇ or less can be applied to a transparent conductive panel for a capacitive touch panel.
  • the surface electrical resistance value of the transparent conductor can be adjusted by the thickness of the transparent metal film or the like.
  • the surface electrical resistance value of the transparent conductor can be measured in accordance with, for example, JIS K7194, ASTM D257, and the like. It can also be measured by a commercially available surface resistivity meter.
  • Transparent conductors obtained by the method of this embodiment include various types of displays such as liquid crystal, plasma, organic electroluminescence, field emission, touch panels, mobile phones, electronic paper, various solar cells, various electroluminescence dimming elements, etc. It can be preferably used for substrates of various optoelectronic devices.
  • Measuring light for example, light having a wavelength of 450 nm to 800 nm
  • the light transmittance and reflectance are measured by Hitachi, Ltd .: spectrophotometer U4100.
  • the absorptance was calculated from a formula of 100 ⁇ (transmittance + reflectance).
  • the measurement light was incident from the second admittance adjustment layer side.
  • the plasmon absorption rate of the transparent metal film was measured as follows. On a transparent glass substrate, a growth nucleus made of platinum palladium was formed on the substrate by a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Co., for 0.2 s (0.1 nm). The average thickness of platinum-palladium was calculated from the film formation rate at the manufacturer's nominal value of the sputtering apparatus.
  • MSP-1S magnetron sputtering apparatus
  • a silver (metal film) film having a thickness of 20 nm was formed on a substrate to which platinum palladium was adhered by a BMC-800T vapor deposition machine manufactured by SYNCHRON.
  • the resistance heating at this time was 210 A, and the film formation rate was 5 ⁇ / s.
  • a transparent metal film was formed on the transparent glass substrate in the same manner as in each Example, the reflectance and transmittance of the transparent metal film were measured, and the absorptance was calculated. Then, a value obtained by subtracting the reference data from the obtained absorption rate data was defined as the plasmon absorption rate.
  • the light transmittance and reflectance were measured with a spectrophotometer U4100 manufactured by Hitachi, Ltd.
  • FIG. 11 shows the plasmon absorption rate derived from the absorption rate of each transparent metal film.
  • the plasmon absorption rate was large when the thickness of the transparent metal film was 6 to 10 nm. Only when the thickness was 12 nm, the plasmon absorption rate was within 15% over the entire wavelength range of 400 nm to 800 nm.
  • FIG. 12 shows the plasmon absorption rate derived from the absorption rate of each transparent metal film.
  • Experimental example 4 Corning non-alkali glass substrate (EAGLE XG (thickness 7 mm ⁇ length 30 mm ⁇ width 30 mm)) was ultrasonically cleaned in ultrapure water (an ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. On the glass substrate, a platinum palladium film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc. to form a growth nucleus having an average thickness of 0.1 nm. The average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
  • MSP-1S magnetron sputtering apparatus
  • FIG. 14 shows the plasmon absorption rate derived from the absorption rate of each transparent metal film.
  • the plasmon absorption is less than 15% in the wavelength range of 400 nm to 800 nm regardless of the thickness of any film. It was.
  • Example A-1 Yamanaka Semiconductor's white substrate ( ⁇ 30 mm, thickness 2 mm) was ultrasonically cleaned in ultrapure water (Ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. A first admittance adjusting layer / transparent metal film / second admittance adjusting layer / third admittance adjusting layer was formed on the glass substrate (transparent support).
  • the interface of the wavelength 570nm optical admittance Y1 x 1 + iy 1 and the first admittance adjusting layer transparent metal film
  • Table 2 also shows the distance ( ⁇ x + ⁇ y) between the air admittance Y env (x env , y env ) and the equivalent admittance Y E (x E , y E ). Further, FIG.
  • FIG. 15A shows the spectral characteristics of the obtained transparent conductor
  • FIG. 15B shows the admittance locus of the transparent conductor.
  • the light absorption rate of the obtained transparent conductor was 25% or less over the entire wavelength range of 400 nm to 800 nm.
  • First admittance adjustment layer TiO 2 was deposited by electron beam (EB) using Gener 1300 manufactured by Optorun under the introduction of oxygen (50 sccm) at 320 mA and a film formation rate of 3 ⁇ / s.
  • the obtained first admittance adjusting layer was 31 nm.
  • the etching conditions were an ion beam current of 200 mA, a voltage of 200 V, and an acceleration voltage of 400 V, and O 2 gas: 50 sccm and Ar gas: 8 sccm were introduced into the ion beam apparatus. Furthermore, Ag was laminated on the transparent support material on which the growth nuclei were formed again using Gener 1300 (220 mA) manufactured by Optorun to obtain a transparent metal film (8 nm) made of Ag. The plasmon absorption rate of the obtained transparent metal film was 15% or less over the entire wavelength range of 400 nm to 800 nm.
  • TiO 2 was deposited by electron beam (EB) using Gener 1300 manufactured by Optorun under the introduction of oxygen (50 sccm) at 320 mA and a film formation rate of 3 ⁇ / s.
  • the obtained second admittance adjusting layer was 21 nm.
  • (Third admittance adjustment layer) SiO 2 was deposited by electron beam (EB) at 60 mA and a film formation rate of 10 ⁇ / s using a Gener 1300 manufactured by Optorun.
  • the obtained third admittance adjusting layer was 50 nm.
  • Example A-2 Corning non-alkali glass substrate (EAGLE XG (thickness 7 mm ⁇ length 30 mm ⁇ width 30 mm)) was ultrasonically cleaned in ultrapure water (an ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. A first admittance adjusting layer / transparent metal film / second admittance adjusting layer / third admittance adjusting layer was formed on the glass substrate (transparent support).
  • the average transmittance of the obtained transparent conductor at a wavelength of 450 to 800 nm the average reflectance at a wavelength of 500 to 700 nm, the average absorptance at a wavelength of 400 to 800 nm, and the absorptance at a wavelength of 400 to 800 nm.
  • Maximum value, a * value and b * value in L * a * b * color system, surface electrical resistance, haze of transparent support material, haze of obtained transparent conductor, and haze degradation (haze of transparent conductor) Table 1 shows the haze of the transparent support.
  • the interface of the wavelength 570nm optical admittance Y1 x 1 + iy 1 and the first admittance adjusting layer transparent metal film
  • Table 2 also shows the distance ( ⁇ x + ⁇ y) between the air admittance Y env (x env , y env ) and the equivalent admittance Y E (x E , y E ).
  • the spectral characteristic of the obtained transparent conductor is shown in FIG. 16A, and the admittance locus of the transparent conductor is shown in FIG. 16B.
  • the light absorption rate of the obtained transparent conductor was 25% or less over the entire wavelength range of 400 nm to 800 nm.
  • First admittance adjustment layer TiO 2 was deposited by electron beam (EB) using a BMC-800T vapor deposition machine manufactured by SYNCHRON Co., with introduction of oxygen (2 ⁇ 10 ⁇ 2 Pa), 320 mA, and a film formation rate of 3 ⁇ / s.
  • the obtained first admittance adjusting layer was 30 nm.
  • TiO 2 was deposited by electron beam (EB) using a BMC-800T vapor deposition machine manufactured by SYNCHRON Co., with introduction of oxygen (2 ⁇ 10 ⁇ 2 Pa), 320 mA, and a film formation rate of 3 ⁇ / s.
  • the obtained second admittance adjusting layer was 21 nm.
  • (Third admittance adjustment layer) SiO 2 was deposited by electron beam (EB) at 60 mA and a deposition rate of 10 ⁇ / s using a BMC-800T vapor deposition machine manufactured by Shincron.
  • the obtained third admittance adjusting layer was 51 nm.
  • Example A-3 Yamanaka Semiconductor's white substrate ( ⁇ 30 mm, thickness 2 mm) was ultrasonically cleaned in ultrapure water (Ultrapure water device Synergy UV manufactured by Millipore). As a sonic cleaning machine, VS-100III manufactured by ASONE was used. A first admittance adjusting layer / transparent metal film / second admittance adjusting layer was formed on the glass substrate (transparent support).
  • the average transmittance of the obtained transparent conductor at a wavelength of 450 to 800 nm the average reflectance at a wavelength of 500 to 700 nm, the average absorptance at a wavelength of 400 to 800 nm, and the absorptance at a wavelength of 400 to 800 nm.
  • Maximum value, a * value and b * value in L * a * b * color system, surface electrical resistance, haze of transparent support material, haze of obtained transparent conductor, and haze degradation (haze of transparent conductor) Table 1 shows the haze of the transparent support.
  • the interface of the wavelength 570nm optical admittance Y1 x 1 + iy 1 and the first admittance adjusting layer transparent metal film
  • Table 2 also shows the distance ( ⁇ x + ⁇ y) between the air admittance Y env (x env , y env ) and the equivalent admittance Y E (x E , y E ).
  • the spectral characteristic of the obtained transparent conductor is shown in FIG. 17A, and the admittance locus of the transparent conductor is shown in FIG. 17B.
  • the light absorption rate of the obtained transparent conductor was 25% or less over the entire wavelength range of 400 nm to 800 nm.
  • First admittance adjustment layer TiO 2 was deposited by electron beam (EB) using a BMC-800T vapor deposition machine manufactured by SYNCHRON Co., with introduction of oxygen (2 ⁇ 10 ⁇ 2 Pa), 320 mA, and a film formation rate of 3 ⁇ / s.
  • the obtained first admittance adjusting layer was 33 nm.
  • Transparent metal film Ti was deposited by electron beam (EB) at 320 mA and a deposition rate of 3 ⁇ / s by a BMC-800T vapor deposition machine manufactured by SYNCHRON. The obtained growth nucleus was 0.1 nm. Subsequently, Ag was sputter-deposited by magnetron sputtering manufactured by Osaka Vacuum Co., Ltd. to obtain a transparent metal film (10 nm) made of Ag. The film formation rate was 15 ⁇ / s. The method for forming the transparent metal film was the same as in Experimental Examples 2 and 4 described above, and the plasmon absorption rate of the obtained transparent metal film was 15% or less over the entire wavelength range of 400 nm to 800 nm.
  • ITO (Second admittance adjustment layer) ITO was sputter-deposited by magnetron sputtering manufactured by Osaka Vacuum Co., Ltd. to obtain a second admittance adjusting layer (36 nm) made of ITO.
  • the film formation rate was 10 ⁇ / s.
  • Example A-4 Corning non-alkali glass substrate (EAGLE XG (thickness 7 mm ⁇ length 30 mm ⁇ width 30 mm)) was ultrasonically cleaned in ultrapure water (an ultrapure water device Synergy UV manufactured by Millipore). As a sonic cleaning machine, VS-100III manufactured by ASONE was used. A first admittance adjusting layer / transparent metal film / second admittance adjusting layer was formed on the glass substrate (transparent support).
  • the average transmittance of the obtained transparent conductor at a wavelength of 450 to 800 nm the average reflectance at a wavelength of 500 to 700 nm, the average absorptance at a wavelength of 400 to 800 nm, and the absorptance at a wavelength of 400 to 800 nm.
  • Maximum value, a * value and b * value in L * a * b * color system, surface electrical resistance, haze of transparent support material, haze of obtained transparent conductor, and haze degradation (haze of transparent conductor) Table 1 shows the haze of the transparent support.
  • the interface of the wavelength 570nm optical admittance Y1 x 1 + iy 1 and the first admittance adjusting layer transparent metal film
  • Table 2 also shows the distance ( ⁇ x + ⁇ y) between the air admittance Y env (x env , y env ) and the equivalent admittance Y E (x E , y E ).
  • the spectral characteristic of the obtained transparent conductor is shown in FIG. 18A, and the admittance locus of the transparent conductor is shown in FIG. 18B.
  • the light absorption rate of the obtained transparent conductor was 25% or less over the entire wavelength range of 400 nm to 800 nm.
  • First admittance adjustment layer TiO 2 was deposited by electron beam (EB) using a BMC-800T vapor deposition machine manufactured by SYNCHRON Co., with introduction of oxygen (2 ⁇ 10 ⁇ 2 Pa), 320 mA, and a film formation rate of 3 ⁇ / s.
  • the obtained first admittance adjusting layer was 35 nm.
  • TiO 2 was deposited by electron beam (EB) using a BMC-800T vapor deposition machine manufactured by SYNCHRON Co., with introduction of oxygen (2 ⁇ 10 ⁇ 2 Pa), 320 mA, and a film formation rate of 3 ⁇ / s.
  • the obtained first admittance adjusting layer was 42 nm.
  • the average transmittance of the obtained transparent conductor at a wavelength of 450 to 800 nm the average reflectance at a wavelength of 500 to 700 nm, the average absorptance at a wavelength of 400 to 800 nm, and the absorptance at a wavelength of 400 to 800 nm.
  • Maximum value, a * value and b * value in L * a * b * color system, surface electrical resistance, haze of transparent support material, haze of obtained transparent conductor, and haze degradation (haze of transparent conductor) Table 1 shows the haze of the transparent support.
  • the optical admittance of wavelength 570nm of the interface between the transparent support of a transparent metal film Y N x N + iy N
  • Table 2 also shows the distance ( ⁇ x + ⁇ y) between the air admittance Y env (x env , y env ) and the equivalent admittance Y E (x E , y E ).
  • the spectral characteristics of the obtained transparent conductor are shown in FIG. 19A, and the admittance locus of the transparent conductor is shown in FIG. 19B.
  • the light absorptance of the obtained transparent conductor exceeded 25% in a partial region having a wavelength of 400 nm to 800 nm.
  • (Admittance adjustment layer) Y 2 O 3 was deposited by electron beam (EB) at 250 mA and a deposition rate of 4 ⁇ / s using a BMC-800T vapor deposition machine manufactured by Shincron.
  • the thickness of the obtained admittance adjusting layer was 55 nm.
  • Example A-2 Corning non-alkali glass substrate (EAGLE XG (thickness 7 mm ⁇ length 30 mm ⁇ width 30 mm)) was ultrasonically cleaned in ultrapure water (an ultrapure water device Synergy UV manufactured by Millipore). As a sonic cleaning machine, VS-100III manufactured by ASONE was used. A first admittance adjusting layer / transparent metal film / second admittance adjusting layer was formed on the glass substrate (transparent support).
  • the average transmittance of the obtained transparent conductor at a wavelength of 450 to 800 nm the average reflectance at a wavelength of 500 to 700 nm, the average absorptance at a wavelength of 400 to 800 nm, and the absorptance at a wavelength of 400 to 800 nm.
  • Maximum value, a * value and b * value in L * a * b * color system, surface electrical resistance, haze of transparent support material, haze of obtained transparent conductor, and haze degradation (haze of transparent conductor) Table 1 shows the haze of the transparent support.
  • the interface of the wavelength 570nm optical admittance Y1 x 1 + iy 1 and the first admittance adjusting layer transparent metal film
  • Table 2 also shows the distance ( ⁇ x + ⁇ y) between the air admittance Y env (x env , y env ) and the equivalent admittance Y E (x E , y E ).
  • the spectral characteristics of the obtained transparent conductor are shown in FIG. 20A, and the admittance locus of the transparent conductor is shown in FIG. 20B.
  • the light absorptance of the obtained transparent conductor exceeded 25% in a partial region having a wavelength of 400 nm to 800 nm.
  • First admittance adjustment layer TiO 2 was deposited by electron beam (EB) using a BMC-800T vapor deposition machine manufactured by SYNCHRON Co., with introduction of oxygen (2 ⁇ 10 ⁇ 2 Pa), 320 mA, and a film formation rate of 3 ⁇ / s.
  • the obtained first admittance adjusting layer was 35 nm.
  • TiO 2 was deposited by electron beam (EB) using a BMC-800T vapor deposition machine manufactured by SYNCHRON Co., with introduction of oxygen (2 ⁇ 10 ⁇ 2 Pa), 320 mA, and a film formation rate of 3 ⁇ / s.
  • the obtained second admittance adjusting layer was 42 nm.
  • Example A-5 Yamanaka Semiconductor's white substrate ( ⁇ 30 mm, thickness 2 mm) was ultrasonically cleaned in ultrapure water (Ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. A first admittance adjusting layer / transparent metal film / second admittance adjusting layer was formed on the glass substrate (transparent support).
  • the average transmittance of the obtained transparent conductor at a wavelength of 450 to 800 nm the average reflectance at a wavelength of 500 to 700 nm, the average absorptance at a wavelength of 400 to 800 nm, and the absorptance at a wavelength of 400 to 800 nm.
  • Maximum value, a * value and b * value in L * a * b * color system, surface electrical resistance, haze of transparent support material, haze of obtained transparent conductor, and haze degradation (haze of transparent conductor) Table 1 shows the haze of the transparent support.
  • the interface of the wavelength 570nm optical admittance Y1 x 1 + iy 1 and the first admittance adjusting layer transparent metal film
  • Table 2 also shows the distance ( ⁇ x + ⁇ y) between the air admittance Y env (x env , y env ) and the equivalent admittance Y E (x E , y E ).
  • the spectral characteristic of the obtained transparent conductor is shown in FIG. 21A
  • the admittance locus of the transparent conductor is shown in FIG. 21B.
  • First admittance adjustment layer TiO 2 was deposited by electron beam (EB) using Gener 1300 manufactured by Optorun under the introduction of oxygen (50 sccm) at 320 mA and a film formation rate of 3 ⁇ / s.
  • the obtained first admittance adjusting layer was 15 nm.
  • Transparent metal film (Transparent metal film) Using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., platinum palladium was deposited for 0.2 seconds to form growth nuclei with an average thickness of 0.1 nm. The average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus. Subsequently, Ag was vapor-deposited by Gener 1300 (210A resistance heating) manufactured by Optorun to obtain a transparent metal film (10 nm) made of Ag. The film formation rate was 7 ⁇ / s. The method for forming the transparent metal film was the same as in Experimental Examples 2 and 4 described above, and the plasmon absorption rate of the obtained transparent metal film was 15% or less over a wavelength range of 400 nm to 800 nm.
  • MSP-1S magnetron sputtering apparatus
  • TiO 2 was deposited by electron beam (EB) using Gener 1300 manufactured by Optorun under the introduction of oxygen (50 sccm) at 320 mA and a film formation rate of 3 ⁇ / s.
  • the obtained second admittance adjusting layer was 29 nm.
  • Example A-6 A first admittance adjusting layer / transparent metal film / second admittance adjusting layer was formed on Toyobo PET (Cosmo Shine A4300 50 ⁇ m product) (transparent support material).
  • the average transmittance of the obtained transparent conductor at a wavelength of 450 to 800 nm the average reflectance at a wavelength of 500 to 700 nm, the average absorptance at a wavelength of 400 to 800 nm, and the absorptance at a wavelength of 400 to 800 nm.
  • Maximum value, a * value and b * value in L * a * b * color system, surface electrical resistance, haze of transparent support material, haze of obtained transparent conductor, and haze degradation (haze of transparent conductor) Table 1 shows the haze of the transparent support.
  • the interface of the wavelength 570nm optical admittance Y1 x 1 + iy 1 and the first admittance adjusting layer transparent metal film
  • Table 2 also shows the distance ( ⁇ x + ⁇ y) between the air admittance Y env (x env , y env ) and the equivalent admittance Y E (x E , y E ).
  • the spectral characteristic of the obtained transparent conductor is shown in FIG. 22A
  • the admittance locus of the transparent conductor is shown in FIG. 22B.
  • First admittance adjustment layer TiO 2 was deposited by electron beam (EB) using Gener 1300 manufactured by Optorun under the introduction of oxygen (50 sccm) at 320 mA and a film formation rate of 3 ⁇ / s.
  • the obtained first admittance adjusting layer was 43 nm.
  • Transparent metal film (Transparent metal film) Using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., platinum palladium was deposited for 0.2 seconds to form growth nuclei with an average thickness of 0.1 nm. The average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus. Subsequently, Ag was vapor-deposited by Gener 1300 (210A resistance heating) manufactured by Optorun to obtain a transparent metal film (8 nm) made of Ag. The film formation rate was 4 ⁇ / s. The method for forming the transparent metal film was the same as in Experimental Examples 2 and 4 described above, and the plasmon absorption rate of the obtained transparent metal film was 15% or less over a wavelength range of 400 nm to 800 nm.
  • MSP-1S magnetron sputtering apparatus
  • TiO 2 was deposited by electron beam (EB) using Gener 1300 manufactured by Optorun under the introduction of oxygen (50 sccm) at 320 mA and a film formation rate of 3 ⁇ / s.
  • the obtained second admittance adjusting layer was 40 nm.
  • Example A-7 Yamanaka Semiconductor's white substrate ( ⁇ 30 mm, thickness 2 mm) was ultrasonically cleaned in ultrapure water (Ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. A first admittance adjusting layer / transparent metal film 1 / other admittance adjusting layer / transparent metal film 2 / second admittance adjusting layer was formed on the glass substrate (transparent support).
  • the average transmittance of the obtained transparent conductor at a wavelength of 450 to 800 nm the average reflectance at a wavelength of 500 to 700 nm, the average absorptance at a wavelength of 400 to 800 nm, and the absorptance at a wavelength of 400 to 800 nm.
  • Maximum value, a * value and b * value in L * a * b * color system, surface electrical resistance, haze of transparent support material, haze of obtained transparent conductor, and haze degradation (haze of transparent conductor) Table 1 shows the haze of the transparent support.
  • the interface of the wavelength 570nm optical admittance Y1 x 1 + iy 1 and the first admittance adjusting layer transparent metal film
  • Table 2 also shows the distance ( ⁇ x + ⁇ y) between the air admittance Y env (x env , y env ) and the equivalent admittance Y E (x E , y E ). Further, FIG.
  • the admittance locus of the obtained transparent conductor shows the admittance locus of the obtained transparent conductor.
  • First admittance adjustment layer TiO 2 was deposited by electron beam (EB) using Gener 1300 manufactured by Optorun under the introduction of oxygen (50 sccm) at 320 mA and a film formation rate of 3 ⁇ / s.
  • the obtained first admittance adjusting layer was 35 nm.
  • Transparent metal film 1 (Transparent metal film 1) Using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., platinum palladium was deposited for 0.2 seconds to form growth nuclei with an average thickness of 0.1 nm. The average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus. Subsequently, Ag was vapor-deposited by Gener 1300 (210A resistance heating) manufactured by Optorun to obtain a transparent metal film (5 nm) made of Ag. The film formation rate was 4 ⁇ / s. The method for forming the transparent metal film was the same as in Experimental Examples 2 and 4 described above, and the plasmon absorption rate of the obtained transparent metal film was 15% or less over a wavelength range of 400 nm to 800 nm.
  • MSP-1S magnetron sputtering apparatus
  • TiO 2 was deposited by electron beam (EB) using Gener 1300 manufactured by Optorun under the introduction of oxygen (50 sccm) at 320 mA and a film formation rate of 3 ⁇ / s.
  • the other admittance adjusting layer obtained was 23 nm.
  • Transparent metal film 2 (Transparent metal film 2) Using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., platinum palladium was deposited for 0.2 seconds to form growth nuclei with an average thickness of 0.1 nm. The average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus. Subsequently, Ag was vapor-deposited by Gener 1300 (210A resistance heating) manufactured by Optorun to obtain a transparent metal film (5 nm) made of Ag. The film formation rate was 4 ⁇ / s. The method for forming the transparent metal film was the same as in Experimental Examples 2 and 4 described above, and the plasmon absorption rate of the obtained transparent metal film was 15% or less over a wavelength range of 400 nm to 800 nm.
  • MSP-1S magnetron sputtering apparatus
  • TiO 2 was deposited by electron beam (EB) using Gener 1300 manufactured by Optorun under the introduction of oxygen (50 sccm) at 320 mA and a film formation rate of 3 ⁇ / s.
  • the obtained second admittance adjusting layer was 31 nm.
  • a silver nanowire aqueous dispersion similar to that in Example 2 of the aforementioned Prior Art Document 2 was spin-coated on the substrate and baked at 120 ° C. for 20 minutes.
  • the coater used was 1K-DX manufactured by MIKASA, and the thermostat used was ST-120 manufactured by ESPEC.
  • Table 1 shows the transmittance, reflectance, absorptance, a * value and b * value in the L * a * b * color system, and surface electrical resistance of the transparent conductor obtained. The spectral characteristics of the obtained transparent conductor are shown in FIG.
  • the transparent metal film is sandwiched between the first admittance adjusting layer and the second admittance adjusting layer;
  • the x-coordinate (x E ) of the equivalent admittance coordinate Y E is larger than 1 than the admittance coordinate (1,0) of air (Examples A-1 to A-7).
  • the average transmittance of light having a wavelength of 450 nm to 800 nm of the transparent conductor was 79.9% or more.
  • Comparative Example A-1 in which the first admittance adjusting layer was not formed, the light absorptance was high, and the average transmittance of light with a wavelength of 450 nm to 800 nm of the transparent conductor was as low as 73.7%. .
  • Comparative Example A-2 in which the light absorptance of the transparent conductor exceeds 25% in a partial region of a wavelength of 400 nm to 800 nm, the x coordinate (x E ) of the equivalent admittance Y E is larger than 1.
  • the average transmittance of light having a wavelength of 450 nm to 800 nm was as low as 71.9%.
  • Example B-1 to B-8 and Comparative Examples B-1 and B-2 the transmittance, reflectance, and absorption rate of the transparent conductor, a * value and b in the L * a * b * color system * Value and surface electric resistance are measured in the same manner as in Example A-1.
  • Example B-1 Yamanaka Semiconductor's white substrate ( ⁇ 30 mm, thickness 2 mm) was ultrasonically cleaned in ultrapure water (Ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. An underlayer / first admittance adjusting layer / transparent metal film / second admittance adjusting layer was formed on the white plate substrate (transparent support). The obtained transparent conductor is bonded to an adhesive (Loctite (registered trademark) 3195 manufactured by Henkel).
  • an adhesive Lictite (registered trademark) 3195 manufactured by Henkel).
  • Table 3 shows values of (x 2 , y 2 ), and equivalent admittance Y E (x E , y E ). Table 3 also shows the coordinate distance (((x E ⁇ n env ) 2 + (y E ) 2 ) 0.5 ) between the optical admittance of the adhesive and the equivalent admittance of the transparent conductor.
  • Table 4 shows the transmittance, reflectance, absorptance, a * value and b * value in the L * a * b * color system, and surface electrical resistance of the obtained transparent conductor.
  • FIG. 25A shows the spectral characteristics of the obtained transparent conductor
  • FIG. 25B shows the admittance locus of the transparent conductor at a wavelength of 450 nm, a wavelength of 570 nm, and a wavelength of 700 nm.
  • Magnesium fluoride (MgF 2 ) was vapor-deposited by electron beam (EB) at 40 mA at a film formation rate of 3 ⁇ / s using a Gener 1300 manufactured by Optorun.
  • the obtained underlayer was 175 nm.
  • the refractive index of light with a wavelength of 570 nm of magnesium fluoride is 1.38.
  • First admittance adjustment layer TiO 2 was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 ⁇ / s with ion assist using a Gener 1300 manufactured by Optorun.
  • the obtained first admittance adjusting layer was 36 nm.
  • the ion beam had a current of 500 mA, a voltage of 500 V, and an acceleration voltage of 400 V, and O 2 gas: 50 sccm and Ar gas: 8 sccm were introduced into the ion beam apparatus.
  • the refractive index of light with a wavelength of 570 nm of TiO 2 is 2.35.
  • a palladium palladium (Pt 80 mass%, Pd 20 mass%) film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., thereby forming a growth nucleus having an average thickness of 0.1 nm.
  • the average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
  • Ag was vapor-deposited by Gener 1300 (210A resistance heating) manufactured by Optorun to obtain a transparent metal film (12 nm) made of Ag.
  • the film formation rate was 3 ⁇ / s.
  • the plasmon absorption rate of the obtained transparent metal film was 15% or less over a wavelength range of 400 nm to 800 nm.
  • TiO 2 was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 ⁇ / s under oxygen introduction using a Gener 1300 manufactured by Optorun.
  • the obtained second admittance adjusting layer was 42 nm.
  • the refractive index of light having a wavelength of 570 nm of TiO 2 is 2.35.
  • Example B-2 Yamanaka Semiconductor's white substrate ( ⁇ 30 mm, thickness 2 mm) was ultrasonically cleaned in ultrapure water (Ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. An underlayer / first admittance adjusting layer / transparent metal film / second admittance adjusting layer was formed on the white plate substrate (transparent support). The obtained transparent conductor is bonded to an adhesive (Loctite (registered trademark) 3195 manufactured by Henkel).
  • an adhesive Lictite (registered trademark) 3195 manufactured by Henkel).
  • Table 3 shows values of (x 2 , y 2 ), and equivalent admittance Y E (x E , y E ). Table 3 also shows the coordinate distance (((x E ⁇ n env ) 2 + (y E ) 2 ) 0.5 ) between the optical admittance of the adhesive and the equivalent admittance of the transparent conductor.
  • Table 4 shows the transmittance, reflectance, absorptance, a * value and b * value in the L * a * b * color system, and surface electrical resistance of the obtained transparent conductor.
  • FIG. 26A shows spectral characteristics of the obtained transparent conductor
  • FIG. 26B shows admittance trajectories of the transparent conductor having a wavelength of 450 nm, a wavelength of 570 nm, and a wavelength of 700 nm.
  • First admittance adjustment layer TiO 2 was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 ⁇ / s with ion assist using a Gener 1300 manufactured by Optorun.
  • the obtained first admittance adjusting layer was 42 nm.
  • the ion beam had a current of 500 mA, a voltage of 500 V, and an acceleration voltage of 400 V, and O 2 gas: 50 sccm and Ar gas: 8 sccm were introduced into the ion beam apparatus.
  • the refractive index of light having a wavelength of 570 nm of TiO 2 is 2.35.
  • a palladium palladium (Pt 80 mass%, Pd 20 mass%) film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., thereby forming a growth nucleus having an average thickness of 0.1 nm.
  • the average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
  • Ag was vapor-deposited by Gener 1300 (210A resistance heating) of Optorun, and the transparent metal film (12 nm) which consists of Ag was obtained.
  • the film formation rate was 3 ⁇ / s.
  • the plasmon absorption rate of the obtained transparent metal film was 15% or less over a wavelength range of 400 nm to 800 nm.
  • TiO 2 was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 ⁇ / s under oxygen introduction using a Gener 1300 manufactured by Optorun.
  • the obtained second admittance adjusting layer was 43 nm.
  • the refractive index of light having a wavelength of 570 nm of TiO 2 is 2.35.
  • Example B-3 Yamanaka Semiconductor's white substrate ( ⁇ 30 mm, thickness 2 mm) was ultrasonically cleaned in ultrapure water (Ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. A base layer (first base layer / second base layer / third base layer) / first admittance adjusting layer / transparent metal film / second admittance adjusting layer was formed on the white plate substrate (transparent support). The obtained transparent conductor is disposed and used in contact with air.
  • Table 3 shows values of (x 2 , y 2 ), and equivalent admittance Y E (x E , y E ). Table 3 also shows the coordinate distance (((x E ⁇ n env ) 2 + (y E ) 2 ) 0.5 ) between the optical admittance of air and the equivalent admittance of the transparent conductor.
  • Table 4 shows the transmittance, reflectance, absorptance, a * value and b * value in the L * a * b * color system, and surface electrical resistance of the obtained transparent conductor.
  • FIG. 27A shows spectral characteristics of the obtained transparent conductor
  • FIG. 27B shows admittance trajectories of the transparent conductor having a wavelength of 450 nm, a wavelength of 570 nm, and a wavelength of 700 nm.
  • a lanthanum aluminate (M3, manufactured by Merck) was deposited by electron beam (EB) at 190 mA and a film formation rate of 10 s / s using a Gener 1300 manufactured by Optorun.
  • the obtained first underlayer was 70 nm.
  • the refractive index of light having a wavelength of 570 nm of lanthanum aluminate (M3) is 1.77.
  • TiO 2 was deposited by electron beam (EB) using Gener 1300 manufactured by Optorun under the introduction of oxygen (10 sccm) at 320 mA and a film formation rate of 3 ⁇ / s.
  • the obtained second underlayer was 115 nm.
  • the refractive index of light having a wavelength of 570 nm of TiO 2 is 2.35.
  • (Third underlayer) MgF 2 was deposited by electron beam (EB) at 40 mA at a deposition rate of 3 ⁇ / s using a Gener 1300 manufactured by Optorun.
  • the obtained third underlayer was 90 nm.
  • the refractive index of light with a wavelength of 570 nm of MgF 2 is 1.38.
  • First admittance adjustment layer TiO 2 was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 ⁇ / s with ion assist using a Gener 1300 manufactured by Optorun.
  • the obtained first admittance adjusting layer was 48 nm.
  • the ion beam had a current of 500 mA, a voltage of 500 V, and an acceleration voltage of 400 V, and O 2 gas: 50 sccm and Ar gas: 8 sccm were introduced into the ion beam apparatus.
  • the refractive index of light having a wavelength of 570 nm of TiO 2 is 2.35.
  • a palladium palladium (Pt 80 mass%, Pd 20 mass%) film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., thereby forming a growth nucleus having an average thickness of 0.1 nm.
  • the average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
  • Ag was vapor-deposited by Gener 1300 (210A resistance heating) manufactured by Optorun to obtain a transparent metal film (15 nm) made of Ag.
  • the film formation rate was 3 ⁇ / s.
  • the plasmon absorption rate of the obtained transparent metal film was 15% or less over a wavelength range of 400 nm to 800 nm.
  • TiO 2 was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 ⁇ / s under oxygen introduction using a Gener 1300 manufactured by Optorun.
  • the obtained second admittance adjusting layer was 43 nm.
  • the refractive index of light having a wavelength of 570 nm of TiO 2 is 2.35.
  • Example B-4 An underlayer / first admittance adjusting layer / transparent metal film / second admittance adjusting layer / third admittance adjusting layer was formed on a transparent support made of PET (Cosmo Shine A4300 thickness 50 ⁇ m) manufactured by Toyobo Co., Ltd. The obtained transparent conductor is disposed and used in contact with air.
  • Table 3 shows values of (x 2 , y 2 ), and equivalent admittance Y E (x E , y E ). Table 3 also shows the coordinate distance (((x E ⁇ n env ) 2 + (y E ) 2 ) 0.5 ) between the optical admittance of air and the equivalent admittance of the transparent conductor.
  • Table 4 shows the transmittance, reflectance, absorptance, a * value and b * value in the L * a * b * color system, and surface electrical resistance of the obtained transparent conductor. Moreover, the spectral characteristic of the obtained transparent conductor is shown in FIG. 28A, and the admittance locus of the wavelength 570 nm of the transparent conductor is shown in FIG. 28B.
  • First admittance adjustment layer TiO 2 was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 ⁇ / s with ion assist using a Gener 1300 manufactured by Optorun.
  • the obtained first admittance adjusting layer was 34 nm.
  • the ion beam had a current of 500 mA, a voltage of 500 V, and an acceleration voltage of 400 V, and O 2 gas: 50 sccm and Ar gas: 8 sccm were introduced into the ion beam apparatus.
  • the refractive index of light having a wavelength of 570 nm of TiO 2 is 2.35.
  • a palladium palladium (Pt 80 mass%, Pd 20 mass%) film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., thereby forming a growth nucleus having an average thickness of 0.1 nm.
  • the average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
  • Ag was vapor-deposited by Gener 1300 (210A resistance heating) manufactured by Optorun to obtain a transparent metal film (12 nm) made of Ag.
  • the film formation rate was 3 ⁇ / s.
  • the plasmon absorption rate of the obtained transparent metal film was 15% or less over a wavelength range of 400 nm to 800 nm.
  • TiO 2 was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 ⁇ / s under oxygen introduction using a Gener 1300 manufactured by Optorun.
  • the obtained second admittance adjusting layer was 22 nm.
  • the refractive index of light having a wavelength of 570 nm of TiO 2 is 2.35.
  • (Third admittance adjustment layer) SiO 2 was deposited by electron beam (EB) at 60 mA and a film formation rate of 10 ⁇ / s using a Gener 1300 manufactured by Optorun.
  • the obtained third admittance adjusting layer was 54 nm.
  • the refractive index of light having a wavelength of 570 nm of SiO 2 is 1.46.
  • Example B-5 An underlayer / first admittance adjusting layer / transparent metal film / second admittance adjusting layer was formed on a transparent support material made of Toyobo PET (Cosmo Shine A4300, thickness 50 ⁇ m). The obtained transparent conductor is bonded to an adhesive (8146-1 from 3M).
  • Table 3 shows values of (x 2 , y 2 ), and equivalent admittance Y E (x E , y E ). Table 3 also shows the coordinate distance (((x E ⁇ n env ) 2 + (y E ) 2 ) 0.5 ) between the optical admittance of the adhesive and the equivalent admittance of the transparent conductor.
  • Table 4 shows the transmittance, reflectance, absorptance, a * value and b * value in the L * a * b * color system, and surface electrical resistance of the obtained transparent conductor.
  • FIG. 29A shows the spectral characteristics of the obtained transparent conductor
  • FIG. 29B shows the admittance locus of the transparent conductor at a wavelength of 570 nm.
  • First admittance adjustment layer TiO 2 was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 ⁇ / s with ion assist using a Gener 1300 manufactured by Optorun.
  • the obtained first admittance adjusting layer was 37 nm.
  • the ion beam had a current of 500 mA, a voltage of 500 V, and an acceleration voltage of 400 V, and O 2 gas: 50 sccm and Ar gas: 8 sccm were introduced into the ion beam apparatus.
  • the refractive index of light having a wavelength of 570 nm of TiO 2 is 2.35.
  • a palladium palladium (Pt 80 mass%, Pd 20 mass%) film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., thereby forming a growth nucleus having an average thickness of 0.1 nm.
  • the average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
  • Ag was vapor-deposited by Gener 1300 (210A resistance heating) of Optorun, and the transparent metal film (10.5 nm) which consists of Ag was obtained.
  • the film formation rate was 3 ⁇ / s.
  • the plasmon absorption rate of the obtained transparent metal film was 15% or less over a wavelength range of 400 nm to 800 nm.
  • TiO 2 was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 ⁇ / s under oxygen introduction using a Gener 1300 manufactured by Optorun.
  • the obtained second admittance adjusting layer was 39 nm.
  • the refractive index of light having a wavelength of 570 nm of TiO 2 is 2.35.
  • Example B-6 Yamanaka Semiconductor's white substrate ( ⁇ 30 mm, thickness 2 mm) was ultrasonically cleaned in ultrapure water (Ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. An underlayer / first admittance adjusting layer / transparent metal film / second admittance adjusting layer was formed on the white plate substrate (transparent support). The obtained transparent conductor is bonded to an adhesive (Loctite (registered trademark) 3195 manufactured by Henkel).
  • an adhesive Lictite (registered trademark) 3195 manufactured by Henkel).
  • Table 3 shows values of (x 2 , y 2 ), and equivalent admittance Y E (x E , y E ). Table 3 also shows the coordinate distance (((x E ⁇ n env ) 2 + (y E ) 2 ) 0.5 ) between the optical admittance of the adhesive and the equivalent admittance of the transparent conductor.
  • Table 4 shows the transmittance, reflectance, absorptance, a * value and b * value in the L * a * b * color system, and surface electrical resistance of the obtained transparent conductor.
  • FIG. 30A shows the spectral characteristics of the obtained transparent conductor
  • FIG. 30B shows the admittance trajectories of the transparent conductor at a wavelength of 450 nm, a wavelength of 570 nm, and a wavelength of 700 nm.
  • Nb 2 O 5 was RF-sputtered using Arnelva L-430S-FHS at Ar 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 0.74 ⁇ / s.
  • the target-substrate distance was 86 mm.
  • the obtained first admittance adjusting layer was 36 nm.
  • the refractive index of light having a wavelength of 570 nm of Nb 2 O 5 is 2.31.
  • a palladium palladium (Pt 80 mass%, Pd 20 mass%) film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., thereby forming a growth nucleus having an average thickness of 0.1 nm.
  • the average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
  • Ag was DC sputtered using L-430S-FHS manufactured by Anerva Co., Ar20 sccm, sputtering pressure 0.3 Pa, room temperature, target side power 125 W, and deposition rate 10 L / s.
  • the target-substrate distance was 86 mm.
  • the obtained transparent metal film was 12 nm. Further, the plasmon absorption rate of the obtained transparent metal film was 15% or less over a wavelength range of 400 nm to 800 nm.
  • Nb 2 O 5 was RF-sputtered using Arnelva L-430S-FHS at Ar 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 0.74 ⁇ / s.
  • the target-substrate distance was 86 mm.
  • the obtained second admittance adjusting layer was 38 nm.
  • the refractive index of light having a wavelength of 570 nm of Nb 2 O 5 is 2.31.
  • Example B-7 An underlayer / first admittance adjusting layer / transparent metal film / second admittance adjusting layer was formed on a Konica Minolta TAC film (transparent support). The obtained transparent conductor is bonded to an adhesive (8146-1, manufactured by 3M).
  • Table 3 shows values of (x 2 , y 2 ), and equivalent admittance Y E (x E , y E ). Table 3 also shows the coordinate distance (((x E ⁇ n env ) 2 + (y E ) 2 ) 0.5 ) between the optical admittance of the adhesive and the equivalent admittance of the transparent conductor.
  • Table 4 shows the transmittance, reflectance, absorptance, a * value and b * value in the L * a * b * color system, and surface electrical resistance of the obtained transparent conductor. Furthermore, the admittance locus
  • a palladium palladium (Pt 80 mass%, Pd 20 mass%) film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., thereby forming a growth nucleus having an average thickness of 0.1 nm.
  • the average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
  • Ag was DC sputtered using L-430S-FHS manufactured by Anerva Co., Ar20 sccm, sputtering pressure 0.3 Pa, room temperature, target side power 125 W, and deposition rate 10 L / s.
  • the target-substrate distance was 86 mm.
  • the obtained transparent metal film was 8 nm. Further, the plasmon absorption rate of the obtained transparent metal film was 15% or less over a wavelength range of 400 nm to 800 nm.
  • Example B-8 An underlayer / first admittance adjusting layer / transparent metal film / second admittance adjusting layer was formed on a Konica Minolta TAC film (transparent support). The obtained transparent conductor is bonded to an adhesive (Loctite (registered trademark) 3195 manufactured by Henkel).
  • Table 3 shows values of (x 2 , y 2 ), and equivalent admittance Y E (x E , y E ). Table 3 also shows the coordinate distance (((x E ⁇ n env ) 2 + (y E ) 2 ) 0.5 ) between the optical admittance of the adhesive and the equivalent admittance of the transparent conductor.
  • Table 4 shows the transmittance, reflectance, absorptance, a * value and b * value in the L * a * b * color system, and surface electrical resistance of the obtained transparent conductor.
  • FIG. 32 shows admittance loci of the obtained transparent conductor with a wavelength of 450 nm, a wavelength of 570 nm, and a wavelength of 700 nm.
  • ZnO was RF sputtered using L-430S-FHS manufactured by Anerva Co., Ar 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target side power 300 W, and deposition rate 1.6 ⁇ / s.
  • the target-substrate distance was 86 mm.
  • the obtained first admittance adjusting layer was 50 nm.
  • the refractive index of light with a wavelength of 570 nm of ZnO was 2.01.
  • a palladium palladium (Pt 80 mass%, Pd 20 mass%) film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., thereby forming a growth nucleus having an average thickness of 0.1 nm.
  • the average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
  • Ag was DC sputtered using L-430S-FHS manufactured by Anerva Co., Ar20 sccm, sputtering pressure 0.3 Pa, room temperature, target side power 125 W, and deposition rate 10 L / s.
  • the target-substrate distance was 86 mm.
  • the obtained transparent metal film was 9 nm. Further, the plasmon absorption rate of the obtained transparent metal film was 15% or less over a wavelength range of 400 nm to 800 nm.
  • (Second admittance adjustment layer) ZnO was RF sputtered using L-430S-FHS manufactured by Anerva Co., Ar 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target side power 300 W, and deposition rate 1.6 ⁇ / s.
  • the target-substrate distance was 86 mm.
  • the obtained second admittance adjusting layer was 22 nm.
  • the refractive index of light having a wavelength of 570 nm of ZnO is 2.01.
  • Table 4 shows the transmittance, reflectance, absorptance, a * value and b * value in the L * a * b * color system, and surface electrical resistance of the transparent conductor obtained.
  • a first admittance adjusting layer / transparent metal film / second admittance adjusting layer was formed on a transparent support made of Toyobo PET (Cosmo Shine A4300 thickness 50 ⁇ m). The obtained transparent conductor is disposed and used in contact with air.
  • the resulting optical admittance Y1 x 1 + iy 1 wavelength 570nm of the first admittance adjusting layer-side surface of the transparent metal film, the optical admittance of wavelength 570nm of the second admittance adjusting layer side surface of the transparent metal film
  • Table 3 also shows the coordinate distance (((x E ⁇ n env ) 2 + (y E ) 2 ) 0.5 ) between the optical admittance of air and the equivalent admittance of the transparent conductor.
  • Table 4 shows the transmittance, reflectance, absorptance, a * value and b * value in the L * a * b * color system, and surface electrical resistance of the obtained transparent conductor.
  • FIG. 33A shows spectral characteristics of the obtained transparent conductor
  • FIG. 33B shows admittance trajectories of the transparent conductor having a wavelength of 450 nm, a wavelength of 570 nm, and a wavelength of 700 nm.
  • Nb 2 O 5 was RF-sputtered using Arnelva L-430S-FHS at Ar 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 0.74 ⁇ / s.
  • the target-substrate distance was 86 mm.
  • the obtained first admittance adjusting layer was 27.7 nm.
  • the refractive index of light having a wavelength of 570 nm of Nb 2 O 5 is 2.31.
  • Transparent metal film DC sputtering was performed with a small sputtering apparatus (BC4279) manufactured by Nippon Vacuum Technology Co., Ltd. At this time, the target side power was set to 200 W. The film thickness of the obtained transparent metal film was 8 nm.
  • IZO (Second admittance adjustment layer) Using an Anelva L-430S-FHS, IZO was RF sputtered at Ar 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 2.2 L / s. The target-substrate distance was 86 mm. The obtained second admittance adjusting layer was 36 nm. The refractive index of light having a wavelength of 570 nm of IZO is 2.05.
  • the average reflectance of the transparent conductor at a wavelength of 500 nm to 700 nm was 6% or less, and was relatively small (Examples B-1 to B-4 and B-6 to B-8).
  • the optical admittances Y1 (x 1 , x 2 ) and Y2 (x 2 , x 2 ) on both surfaces of the transparent metal film are increased, and the electric field of the transparent metal film It is inferred that the loss has been reduced.
  • the transparent conductor having the structure of transparent support material / underlayer / first admittance adjusting layer / transparent metal film / second admittance adjusting layer, for example, as shown in FIGS. 25 to 28 and FIGS.
  • the admittance locus of light having a wavelength of 450 nm, a wavelength of 570 nm, and a wavelength of 700 nm tends to be line symmetric around the horizontal axis, and y 1 + y 2 was also less than 0.8. Therefore, both the equivalent admittance Y E approached n env. Furthermore, since there is less variation in the equivalent admittance Y E of each wavelength, smaller absorption maximum at a wavelength of 450 nm ⁇ 800 nm, was high transmittance at any wavelength region.
  • Example B-5 as shown in FIG. 29B, the admittance was not sufficiently symmetric about the horizontal axis, and y 1 + y 2 was 0.8 or more. Therefore, as shown in FIG. 29A, there is a region where the reflection suppressing effect is not sufficient in the wavelength range of 400 nm to 800 nm.
  • Comparative Example B-1 in which silver nanowires were formed, the surface electrical resistance was high and the haze degradation was large. Further, as shown in FIG. 33A, in Comparative Example B-2 in which no underlayer was formed, the reflectance was about 10% in any wavelength region, and the average absorptance was also close to 10%.
  • Example C-1 Yamanaka Semiconductor's white substrate ( ⁇ 30 mm, thickness 2 mm) was ultrasonically cleaned in ultrapure water (Ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used.
  • the first admittance adjusting layer / low refractive index layer A / transparent metal film / low refractive index layer B / second admittance adjusting layer / third admittance adjusting layer are formed on the white plate substrate (transparent support material) by the following method. A film was formed.
  • FIG. 9A shows the spectral characteristics of the obtained transparent conductor
  • FIG. 9B shows the admittance locus of the transparent conductor at a wavelength of 570 nm.
  • First admittance adjustment layer On the transparent support described above, TiO 2 was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 ⁇ / s while ion assisting using a Gener 1300 manufactured by Optorun. The obtained first admittance adjusting layer was 29 nm.
  • the ion beam had a current of 500 mA, a voltage of 500 V, and an acceleration voltage of 400 V, and O 2 gas: 50 sccm and Ar gas: 8 sccm were introduced into the ion beam apparatus.
  • the refractive index of light having a wavelength of 570 nm of TiO 2 was 2.35
  • the refractive index of light having a wavelength of 570 nm of the first admittance adjusting layer was 2.35.
  • Low refractive index layer A SiO 2 was deposited by electron beam (EB) at 60 mA and a film formation rate of 10 ⁇ / s using a Gener 1300 manufactured by Optorun.
  • the obtained low refractive index layer A was 5 nm.
  • the refractive index of light with a wavelength of 570 nm of SiO 2 was 1.46, and the refractive index of light with a wavelength of 570 nm of the low refractive index layer A was 1.46.
  • a palladium palladium (Pt 80 mass%, Pd 20 mass%) film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., thereby forming a growth nucleus having an average thickness of 0.1 nm.
  • the average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
  • Ag was vapor-deposited by Gener 1300 (210A resistance heating) of Optorun, and the transparent metal film (10 nm) which consists of Ag was obtained.
  • the film formation rate was 3 ⁇ / s.
  • the plasmon absorption rate of the obtained transparent metal film was 10% or less over a wavelength range of 400 nm to 800 nm.
  • Low refractive index layer B SiO 2 SiO 2 was deposited by electron beam (EB) at 60 mA and a film formation rate of 10 ⁇ / s using a Gener 1300 manufactured by Optorun.
  • the obtained low refractive index layer B was 5 nm.
  • the refractive index of light with a wavelength of 570 nm of SiO 2 was 1.46, and the refractive index of light with a wavelength of 570 nm of the low refractive index layer B was 1.46.
  • TiO 2 was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 ⁇ / s under oxygen introduction using a Gener 1300 manufactured by Optorun.
  • the obtained second admittance adjusting layer was 24 nm.
  • the refractive index of light with a wavelength of 570 nm of TiO 2 was 2.35, and the refractive index of the second admittance adjusting layer was 2.35.
  • (Third admittance adjustment layer) SiO 2 was deposited by electron beam (EB) at 60 mA and a film formation rate of 10 ⁇ / s using a Gener 1300 manufactured by Optorun.
  • the obtained admittance adjusting layer was 25 nm.
  • the refractive index of light having a wavelength of 570 nm of SiO 2 was 1.46, and the refractive index of the third admittance adjusting layer was 1.46.
  • Example C-2 A first admittance adjusting layer / low refractive index layer A / transparent metal film / low refractive index layer B / second admittance adjusting layer was formed on a Konica Minolta TAC film (transparent support) by the following method.
  • the spectral characteristic of the obtained transparent conductor is shown in FIG. 34A, and the admittance locus of the transparent conductor at a wavelength of 570 nm is shown in FIG. 34B.
  • Nb 2 O 5 was RF-sputtered using Arnelva L-430S-FHS at Ar 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 0.74 ⁇ / s.
  • the target-substrate distance was 86 mm.
  • the obtained first admittance adjusting layer was 23 nm.
  • the refractive index of light having a wavelength of 570 nm of Nb 2 O 5 was 2.31, and the refractive index of light having a wavelength of 570 nm of the first admittance adjusting layer was 2.31.
  • a palladium palladium (Pt 80 mass%, Pd 20 mass%) film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., thereby forming a growth nucleus having an average thickness of 0.1 nm.
  • the average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
  • Ag was RF-sputtered by using L-430S-FHS manufactured by Anerva Co., Ar 20 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 100 W, and deposition rate 2.5 ⁇ / s.
  • the target-substrate distance was 86 mm.
  • the obtained transparent metal film (11 nm) made of Ag had a plasmon absorption rate of 10% or less over a wavelength range of 400 nm to 800 nm.
  • Nb 2 O 5 was RF-sputtered using Arnelva L-430S-FHS at Ar 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 0.74 ⁇ / s.
  • the target-substrate distance was 86 mm.
  • the obtained second admittance adjusting layer was 23 nm.
  • the refractive index of light with a wavelength of 570 nm of Nb 2 O 5 was 2.31, and the refractive index of light with a wavelength of 570 nm of the second admittance adjusting layer was 2.31.
  • Example C-3 Yamanaka Semiconductor's white substrate ( ⁇ 30 mm, thickness 2 mm) was ultrasonically cleaned in ultrapure water (Ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used.
  • the first admittance adjusting layer / low refractive index layer A / transparent metal film / low refractive index layer B / second admittance adjusting layer / third admittance adjusting layer are formed on the white plate substrate (transparent support material) by the following method. A film was formed.
  • FIG. 35A shows the spectral characteristics of the obtained transparent conductor
  • FIG. 35B shows the admittance locus of the transparent conductor at a wavelength of 570 nm.
  • First admittance adjustment layer TiO 2 was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 ⁇ / s with ion assist using a Gener 1300 manufactured by Optorun.
  • the obtained first admittance adjusting layer was 35 nm.
  • the ion beam had a current of 500 mA, a voltage of 500 V, and an acceleration voltage of 400 V, and O 2 gas: 50 sccm and Ar gas: 8 sccm were introduced into the ion beam apparatus.
  • the refractive index of light with a wavelength of 570 nm of TiO 2 was 2.35
  • the refractive index of light with a wavelength of 570 nm of the first admittance adjustment layer was 2.31.
  • MgF 2 was deposited by electron beam (EB) at 190 mA and a deposition rate of 10 ⁇ / s using a Gener 1300 manufactured by Optorun.
  • the obtained low refractive index layer A was 5 nm.
  • the refractive index of light with a wavelength of 570 nm of MgF 2 was 1.38, and the refractive index of light with a wavelength of 570 nm of the low refractive index layer A was 1.38.
  • a palladium palladium (Pt 80 mass%, Pd 20 mass%) film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., thereby forming a growth nucleus having an average thickness of 0.1 nm.
  • the average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
  • Ag was vapor-deposited by Gener 1300 (210A resistance heating) of Optorun, and the transparent metal film (10 nm) which consists of Ag was obtained.
  • the film formation rate was 3 ⁇ / s.
  • the plasmon absorption rate of the obtained transparent metal film was 10% or less over a wavelength range of 400 nm to 800 nm.
  • Low refractive index layer B MgF 2 was deposited by electron beam (EB) at 190 mA and a deposition rate of 10 ⁇ / s using a Gener 1300 manufactured by Optorun.
  • the obtained low refractive index layer B was 5 nm.
  • the refractive index of light with a wavelength of 570 nm of MgF 2 was 1.38
  • the refractive index of light with a wavelength of 570 nm of the low refractive index layer B was 1.38.
  • (Second admittance adjustment layer) TiO 2 was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 ⁇ / s with ion assist using a Gener 1300 manufactured by Optorun.
  • the obtained second admittance adjusting layer was 24 nm.
  • the ion beam had a current of 500 mA, a voltage of 500 V, and an acceleration voltage of 400 V, and O 2 gas: 50 sccm and Ar gas: 8 sccm were introduced into the ion beam apparatus.
  • the refractive index of light having a wavelength of 570 nm of TiO 2 was 2.35
  • the refractive index of light having a wavelength of 570 nm of the second admittance adjusting layer was 2.35.
  • (Third admittance adjustment layer) SiO 2 was deposited by electron beam (EB) at 60 mA and a film formation rate of 10 ⁇ / s using a Gener 1300 manufactured by Optorun.
  • the obtained admittance adjusting layer was 25 nm.
  • the refractive index of light with a wavelength of 570 nm of SiO 2 was 1.46
  • the refractive index of light with a wavelength of 570 nm of the third admittance adjustment layer was 1.46.
  • Example C-4 A first admittance adjusting layer / low refractive index layer A / transparent metal film / low refractive index layer on a transparent support material made of Toyobo PET (Cosmo Shine A4300, thickness 50 ⁇ m) by the following method A B / second admittance adjusting layer was formed.
  • the spectral characteristics of the obtained transparent conductor are shown in FIG. 36A, and the admittance locus of the transparent conductor at a wavelength of 570 nm is shown in FIG. 36B.
  • Nb 2 O 5 was RF-sputtered using Arnelva L-430S-FHS at Ar 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 0.74 ⁇ / s.
  • the target-substrate distance was 86 mm.
  • the obtained first admittance adjusting layer was 25 nm.
  • the refractive index of light having a wavelength of 570 nm of Nb 2 O 5 was 2.31, and the refractive index of light having a wavelength of 570 nm of the first admittance adjusting layer was 2.31.
  • a palladium palladium (Pt 80 mass%, Pd 20 mass%) film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., thereby forming a growth nucleus having an average thickness of 0.1 nm.
  • the average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
  • Ag was RF-sputtered by using L-430S-FHS manufactured by Anerva Co., Ar 20 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 100 W, and deposition rate 2.5 ⁇ / s.
  • the target-substrate distance was 86 mm.
  • the obtained transparent metal film (10 nm) made of Ag had a plasmon absorption rate of 10% or less over a wavelength range of 400 nm to 800 nm.
  • Nb 2 O 5 was RF-sputtered using Arnelva L-430S-FHS at Ar 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 0.74 ⁇ / s.
  • the target-substrate distance was 86 mm.
  • the obtained second admittance adjusting layer was 26 nm.
  • the refractive index of light with a wavelength of 570 nm of Nb 2 O 5 was 2.31, and the refractive index of light with a wavelength of 570 nm of the second admittance adjusting layer was 2.31.
  • Example C-5 Corning non-alkali glass substrate (EAGLE XG (thickness 7 mm ⁇ length 30 mm ⁇ width 30 mm)) was ultrasonically cleaned in ultrapure water (an ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. A first admittance adjusting layer / low refractive index layer A / transparent metal film / low refractive index layer B / second admittance adjusting layer / third admittance adjusting layer is formed on the glass substrate (transparent support material) by the following method. A film was formed. The spectral characteristic of the obtained transparent conductor is shown in FIG. 37A, and the admittance locus of the transparent conductor at a wavelength of 570 nm is shown in FIG. 37B.
  • First admittance adjustment layer On the transparent support described above, TiO 2 was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 ⁇ / s while ion assisting using a Gener 1300 manufactured by Optorun. The obtained first admittance adjusting layer was 28 nm.
  • the ion beam had a current of 500 mA, a voltage of 500 V, and an acceleration voltage of 400 V, and O 2 gas: 50 sccm and Ar gas: 8 sccm were introduced into the ion beam apparatus.
  • the refractive index of light having a wavelength of 570 nm of TiO 2 was 2.35
  • the refractive index of light having a wavelength of 570 nm of the first admittance adjusting layer was 2.35.
  • Low refractive index layer A SiO 2 was deposited by electron beam (EB) at 60 mA and a film formation rate of 10 ⁇ / s using a Gener 1300 manufactured by Optorun.
  • the obtained low refractive index layer A was 15 nm.
  • the refractive index of light with a wavelength of 570 nm of SiO 2 was 1.46, and the refractive index of light with a wavelength of 570 nm of the low refractive index layer A was 1.46.
  • a palladium palladium (Pt 80 mass%, Pd 20 mass%) film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., thereby forming a growth nucleus having an average thickness of 0.1 nm.
  • the average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
  • Ag was vapor-deposited by Gener 1300 (210A resistance heating) of Optorun, and the transparent metal film (10 nm) which consists of Ag was obtained.
  • the film formation rate was 3 ⁇ / s.
  • the plasmon absorption rate of the obtained transparent metal film was 10% or less over a wavelength range of 400 nm to 800 nm.
  • Low refractive index layer B SiO 2 SiO 2 was deposited by electron beam (EB) at 60 mA and a film formation rate of 10 ⁇ / s using a Gener 1300 manufactured by Optorun.
  • the obtained low refractive index layer B was 10 nm.
  • the refractive index of light with a wavelength of 570 nm of SiO 2 was 1.46, and the refractive index of light with a wavelength of 570 nm of the low refractive index layer B was 1.46.
  • (Second admittance adjustment layer) TiO 2 was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 ⁇ / s under oxygen introduction using a Gener 1300 manufactured by Optorun.
  • the obtained second admittance adjusting layer was 29 nm.
  • the refractive index of light having a wavelength of 570 nm of TiO 2 was 2.35, and the refractive index of light having a wavelength of 570 nm of the second admittance adjusting layer was 2.35.
  • (Third admittance adjustment layer) SiO 2 was deposited by electron beam (EB) at 60 mA and a film formation rate of 10 ⁇ / s using a Gener 1300 manufactured by Optorun.
  • the obtained admittance adjusting layer was 15 nm.
  • the refractive index of light with a wavelength of 570 nm of SiO 2 was 1.46
  • the refractive index of light with a wavelength of 570 nm of the third admittance adjustment layer was 1.46.
  • Example C-6 Corning non-alkali glass substrate (EAGLE XG (thickness 7 mm ⁇ length 30 mm ⁇ width 30 mm)) was ultrasonically cleaned in ultrapure water (an ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. A first admittance adjusting layer / transparent metal film / low refractive index layer B / second admittance adjusting layer / third admittance adjusting layer was formed on the glass substrate (transparent support) by the following method. The spectral characteristic of the obtained transparent conductor is shown in FIG. 38A, and the admittance locus of the transparent conductor at a wavelength of 570 nm is shown in FIG. 38B.
  • Nb 2 O 5 was RF-sputtered using Arnelva L-430S-FHS at Ar 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 0.74 ⁇ / s.
  • the target-substrate distance was 86 mm.
  • the obtained first admittance adjusting layer was 29 nm.
  • the refractive index of light having a wavelength of 570 nm of Nb 2 O 5 was 2.31, and the refractive index of light having a wavelength of 570 nm of the first admittance adjusting layer was 2.31.
  • a palladium palladium (Pt 80 mass%, Pd 20 mass%) film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., thereby forming a growth nucleus having an average thickness of 0.1 nm.
  • the average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
  • Ag was RF-sputtered by using L-430S-FHS manufactured by Anerva Co., Ar 20 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 100 W, and deposition rate 2.5 ⁇ / s.
  • the target-substrate distance was 86 mm.
  • the obtained transparent metal film (10 nm) made of Ag had a plasmon absorption rate of 10% or less over a wavelength range of 400 nm to 800 nm.
  • Nb 2 O 5 was RF-sputtered using Arnelva L-430S-FHS at Ar 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 0.74 ⁇ / s.
  • the target-substrate distance was 86 mm.
  • the obtained second admittance adjusting layer was 24 nm.
  • the refractive index of light with a wavelength of 570 nm of Nb 2 O 5 was 2.31, and the refractive index of light with a wavelength of 570 nm of the second admittance adjusting layer was 2.31.
  • Example C-7 Corning non-alkali glass substrate (EAGLE XG (thickness 7 mm ⁇ length 30 mm ⁇ width 30 mm)) was ultrasonically cleaned in ultrapure water (an ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. A first admittance adjusting layer / low refractive index layer A / transparent metal film / low refractive index layer B / second admittance adjusting layer / third admittance adjusting layer is formed on the glass substrate (transparent support material) by the following method. A film was formed. The spectral characteristic of the obtained transparent conductor is shown in FIG. 39A, and the admittance locus of the transparent conductor at a wavelength of 570 nm is shown in FIG. 39B.
  • First admittance adjustment layer TiO 2 was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 ⁇ / s with ion assist using a Gener 1300 manufactured by Optorun.
  • the obtained first admittance adjusting layer was 38 nm.
  • the ion beam had a current of 500 mA, a voltage of 500 V, and an acceleration voltage of 400 V, and O 2 gas: 50 sccm and Ar gas: 8 sccm were introduced into the ion beam apparatus.
  • the refractive index of light having a wavelength of 570 nm of TiO 2 was 2.35
  • the refractive index of light having a wavelength of 570 nm of the first admittance adjusting layer was 2.35.
  • MgF 2 was deposited by electron beam (EB) at 190 mA and a deposition rate of 10 ⁇ / s using a Gener 1300 manufactured by Optorun.
  • the obtained low refractive index layer A was 3 nm.
  • the refractive index of light with a wavelength of 570 nm of MgF 2 was 1.38
  • the refractive index of light with a wavelength of 570 nm of the low refractive index layer A was 1.38.
  • a palladium palladium (Pt 80 mass%, Pd 20 mass%) film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., thereby forming a growth nucleus having an average thickness of 0.1 nm.
  • the average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
  • Ag was vapor-deposited by Gener 1300 (210A resistance heating) of Optorun, and the transparent metal film (10 nm) which consists of Ag was obtained.
  • the film formation rate was 3 ⁇ / s.
  • the plasmon absorption rate of the obtained transparent metal film was 10% or less over a wavelength range of 400 nm to 800 nm.
  • Low refractive index layer B MgF 2 was deposited by electron beam (EB) at 190 mA and a deposition rate of 10 ⁇ / s using a Gener 1300 manufactured by Optorun.
  • the obtained low refractive index layer B was 5 nm.
  • the refractive index of light with a wavelength of 570 nm of MgF 2 was 1.38
  • the refractive index of light with a wavelength of 570 nm of the low refractive index layer B was 1.38.
  • (Second admittance adjustment layer) TiO 2 was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 ⁇ / s with ion assist using a Gener 1300 manufactured by Optorun.
  • the obtained second admittance adjusting layer was 27 nm.
  • the ion beam had a current of 500 mA, a voltage of 500 V, and an acceleration voltage of 400 V, and O 2 gas: 50 sccm and Ar gas: 8 sccm were introduced into the ion beam apparatus.
  • the refractive index of light having a wavelength of 570 nm of TiO 2 was 2.35
  • the refractive index of light having a wavelength of 570 nm of the second admittance adjusting layer was 2.35.
  • (Third admittance adjustment layer) SiO 2 was deposited by electron beam (EB) at 60 mA and a film formation rate of 10 ⁇ / s using a Gener 1300 manufactured by Optorun.
  • the obtained admittance adjusting layer was 25 nm.
  • the refractive index of light with a wavelength of 570 nm of SiO 2 was 1.46
  • the refractive index of light with a wavelength of 570 nm of the third admittance adjustment layer was 1.46.
  • Example C-8 Corning non-alkali glass substrate (EAGLE XG (thickness 7 mm ⁇ length 30 mm ⁇ width 30 mm)) was ultrasonically cleaned in ultrapure water (an ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. A first admittance adjusting layer / low refractive index layer A / transparent metal film / low refractive index layer B / second admittance adjusting layer / third admittance adjusting layer is formed on the glass substrate (transparent support material) by the following method. A film was formed. The spectral characteristic of the obtained transparent conductor is shown in FIG. 40A, and the admittance locus of the transparent conductor at a wavelength of 570 nm is shown in FIG. 40B.
  • Nb 2 O 5 was RF-sputtered using Arnelva L-430S-FHS at Ar 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 0.74 ⁇ / s.
  • the target-substrate distance was 86 mm.
  • the obtained first admittance adjusting layer was 36 nm.
  • the refractive index of light having a wavelength of 570 nm of Nb 2 O 5 was 2.31, and the refractive index of light having a wavelength of 570 nm of the first admittance adjusting layer was 2.31.
  • a palladium palladium (Pt 80 mass%, Pd 20 mass%) film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., thereby forming a growth nucleus having an average thickness of 0.1 nm.
  • the average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
  • Ag was RF-sputtered by using L-430S-FHS manufactured by Anerva Co., Ar 20 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 100 W, and deposition rate 2.5 ⁇ / s.
  • the target-substrate distance was 86 mm.
  • the obtained transparent metal film (9 nm) made of Ag had a plasmon absorption rate of 10% or less over a wavelength range of 400 nm to 800 nm.
  • Nb 2 O 5 was RF-sputtered using Arnelva L-430S-FHS at Ar 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 0.74 ⁇ / s.
  • the target-substrate distance was 86 mm.
  • the obtained second admittance adjusting layer was 30 nm.
  • the refractive index of light with a wavelength of 570 nm of Nb 2 O 5 was 2.31, and the refractive index of light with a wavelength of 570 nm of the second admittance adjusting layer was 2.31.
  • Example C-9 Corning non-alkali glass substrate (EAGLE XG (thickness 7 mm ⁇ length 30 mm ⁇ width 30 mm)) was ultrasonically cleaned in ultrapure water (an ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. A first admittance adjusting layer / low refractive index layer A / transparent metal film / second admittance adjusting layer / third admittance adjusting layer was formed on the glass substrate (transparent support) by the following method. The spectral characteristics of the obtained transparent conductor are shown in FIG. 41A, and the admittance locus of the transparent conductor at a wavelength of 570 nm is shown in FIG. 41B.
  • First admittance adjustment layer TiO 2 was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 ⁇ / s with ion assist using a Gener 1300 manufactured by Optorun.
  • the obtained first admittance adjusting layer was 34 nm.
  • the ion beam had a current of 500 mA, a voltage of 500 V, and an acceleration voltage of 400 V, and O 2 gas: 50 sccm and Ar gas: 8 sccm were introduced into the ion beam apparatus.
  • the refractive index of light having a wavelength of 570 nm of TiO 2 was 2.35
  • the refractive index of light having a wavelength of 570 nm of the first admittance adjusting layer was 2.35.
  • a lanthanum aluminate (M3, manufactured by Merck) was deposited by electron beam (EB) at 190 mA and a film formation rate of 10 s / s using a Gener 1300 manufactured by Optorun.
  • the obtained low refractive index layer A was 3 nm.
  • the refractive index of the light of wavelength 570 nm of lanthanum aluminate (M3) was 1.77
  • the refractive index of the light of wavelength 570 nm of the low refractive index layer A was 1.77.
  • a palladium palladium (Pt 80 mass%, Pd 20 mass%) film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., thereby forming a growth nucleus having an average thickness of 0.1 nm.
  • the average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
  • Ag was vapor-deposited by Gener 1300 (210A resistance heating) of Optorun, and the transparent metal film (9 nm) which consists of Ag was obtained.
  • the film formation rate was 3 ⁇ / s.
  • the plasmon absorption rate of the obtained transparent metal film was 10% or less over a wavelength range of 400 nm to 800 nm.
  • (Second admittance adjustment layer) TiO 2 was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 ⁇ / s with ion assist using a Gener 1300 manufactured by Optorun.
  • the obtained second admittance adjusting layer was 33 nm.
  • the ion beam had a current of 500 mA, a voltage of 500 V, and an acceleration voltage of 400 V, and O 2 gas: 50 sccm and Ar gas: 8 sccm were introduced into the ion beam apparatus.
  • the refractive index of light having a wavelength of 570 nm of TiO 2 was 2.35
  • the refractive index of light having a wavelength of 570 nm of the second admittance adjusting layer was 2.35.
  • (Third admittance adjustment layer) SiO 2 was deposited by electron beam (EB) at 60 mA and a film formation rate of 10 ⁇ / s using a Gener 1300 manufactured by Optorun.
  • the obtained admittance adjusting layer was 45 nm.
  • the refractive index of light with a wavelength of 570 nm of SiO 2 was 1.46
  • the refractive index of light with a wavelength of 570 nm of the third admittance adjustment layer was 1.46.
  • Example C-10 Corning non-alkali glass substrate (EAGLE XG (thickness 7 mm ⁇ length 30 mm ⁇ width 30 mm)) was ultrasonically cleaned in ultrapure water (an ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. A first admittance adjusting layer / transparent metal film / low refractive index layer B / second admittance adjusting layer / third admittance adjusting layer was formed on the glass substrate (transparent support) by the following method.
  • FIG. 42A shows the spectral characteristics of the obtained transparent conductor
  • FIG. 42B shows the admittance locus of the transparent conductor at a wavelength of 570 nm.
  • Nb 2 O 5 was RF-sputtered using Arnelva L-430S-FHS at Ar 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 0.74 ⁇ / s.
  • the target-substrate distance was 86 mm.
  • the obtained first admittance adjusting layer was 34 nm.
  • the refractive index of light having a wavelength of 570 nm of Nb 2 O 5 was 2.31, and the refractive index of light having a wavelength of 570 nm of the first admittance adjusting layer was 2.31.
  • a palladium palladium (Pt 80 mass%, Pd 20 mass%) film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., thereby forming a growth nucleus having an average thickness of 0.1 nm.
  • the average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
  • Ag was RF-sputtered by using L-430S-FHS manufactured by Anerva Co., Ar 20 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 100 W, and deposition rate 2.5 ⁇ / s.
  • the target-substrate distance was 86 mm.
  • the obtained transparent metal film (9 nm) made of Ag had a plasmon absorption rate of 10% or less over a wavelength range of 400 nm to 800 nm.
  • Low refractive index layer B Y 2 O 3 was deposited by electron beam (EB) at 250 mA and a deposition rate of 4 ⁇ / s using a BMC-800T vapor deposition machine manufactured by Shincron.
  • the thickness of the obtained low refractive index layer B was 3 nm.
  • the refractive index of light with a wavelength of 570 nm of Y 2 O 3 was 1.78, and the refractive index of light with a wavelength of 570 nm of the low refractive index layer B was 1.78.
  • Nb 2 O 5 was RF-sputtered using Arnelva L-430S-FHS at Ar 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 0.74 ⁇ / s.
  • the target-substrate distance was 86 mm.
  • the obtained second admittance adjusting layer was 33 nm.
  • the refractive index of light with a wavelength of 570 nm of Nb 2 O 5 was 2.31, and the refractive index of light with a wavelength of 570 nm of the second admittance adjusting layer was 2.31.
  • Example C-11 Yamanaka Semiconductor's white substrate ( ⁇ 30 mm, thickness 2 mm) was ultrasonically cleaned in ultrapure water (Ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. A first admittance adjustment layer / low refractive index layer A / transparent metal film / low refractive index layer B / second admittance adjustment layer was formed on the white plate substrate (transparent support) by the following method.
  • FIG. 43A shows the spectral characteristics of the obtained transparent conductor
  • FIG. 43B shows the admittance locus of the transparent conductor at a wavelength of 570 nm.
  • a palladium palladium (Pt 80 mass%, Pd 20 mass%) film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., thereby forming a growth nucleus having an average thickness of 0.1 nm.
  • the average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
  • Ag was RF-sputtered by using L-430S-FHS manufactured by Anerva Co., Ar 20 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 100 W, and deposition rate 2.5 ⁇ / s.
  • the target-substrate distance was 86 mm.
  • the obtained transparent metal film (9 nm) made of Ag had a plasmon absorption rate of 10% or less over a wavelength range of 400 nm to 800 nm.
  • Example C-12 Yamanaka Semiconductor's white substrate ( ⁇ 30 mm, thickness 2 mm) was ultrasonically cleaned in ultrapure water (Ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. A first admittance adjustment layer / low refractive index layer A / transparent metal film / low refractive index layer B / second admittance adjustment layer was formed on the white plate substrate (transparent support) by the following method.
  • FIG. 44A shows the spectral characteristics of the obtained transparent conductor
  • FIG. 44B shows the admittance locus of the transparent conductor at a wavelength of 570 nm.
  • (First admittance adjustment layer) ZnO was DC sputtered using L-430S-FHS manufactured by Anerva Co., Ar 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target power 150 W, and deposition rate 1.4 ⁇ / s.
  • the target-substrate distance was 86 mm.
  • the obtained first admittance adjusting layer was 28 nm.
  • the refractive index of light with a wavelength of 570 nm of ZnO was 2.01, and the refractive index of light with a wavelength of 570 nm of the first admittance adjusting layer was 2.01.
  • a palladium palladium (Pt 80 mass%, Pd 20 mass%) film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., thereby forming a growth nucleus having an average thickness of 0.1 nm.
  • the average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
  • Ag was RF-sputtered by using L-430S-FHS manufactured by Anerva Co., Ar 20 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 100 W, and deposition rate 2.5 ⁇ / s.
  • the target-substrate distance was 86 mm.
  • the obtained transparent metal film (6 nm) made of Ag had a plasmon absorption rate of 10% or less over a wavelength range of 400 nm to 800 nm.
  • (Second admittance adjustment layer) ZnO was DC sputtered using L-430S-FHS manufactured by Anerva Co., Ar 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target power 150 W, and deposition rate 1.4 ⁇ / s.
  • the target-substrate distance was 86 mm.
  • the obtained second admittance adjusting layer was 54 nm.
  • the refractive index of light with a wavelength of 570 nm of ZnO was 2.01, and the refractive index of light with a wavelength of 570 nm of the second admittance adjusting layer was 2.01.
  • Example C-13 Corning non-alkali glass substrate (EAGLE XG (thickness 7 mm ⁇ length 30 mm ⁇ width 30 mm)) was ultrasonically cleaned in ultrapure water (an ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. A first admittance adjusting layer / transparent metal film / low refractive index layer B / second admittance adjusting layer was formed on the glass substrate (transparent support) by the following method. The spectral characteristic of the obtained transparent conductor is shown in FIG. 45A, and the admittance locus of the transparent conductor at a wavelength of 570 nm is shown in FIG. 45B.
  • Nb 2 O 5 was RF-sputtered using Arnelva L-430S-FHS at Ar 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 0.74 ⁇ / s.
  • the target-substrate distance was 86 mm.
  • the obtained first admittance adjusting layer was 35 nm.
  • the refractive index of light having a wavelength of 570 nm of Nb 2 O 5 was 2.31, and the refractive index of light having a wavelength of 570 nm of the first admittance adjusting layer was 2.31.
  • a palladium palladium (Pt 80 mass%, Pd 20 mass%) film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., thereby forming a growth nucleus having an average thickness of 0.1 nm.
  • the average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
  • Ag was RF-sputtered by using L-430S-FHS manufactured by Anerva Co., Ar 20 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 100 W, and deposition rate 2.5 ⁇ / s.
  • the target-substrate distance was 86 mm.
  • the obtained transparent metal film (11 nm) made of Ag had a plasmon absorption rate of 10% or less over a wavelength range of 400 nm to 800 nm.
  • Nb 2 O 5 was RF-sputtered using Arnelva L-430S-FHS at Ar 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 0.74 ⁇ / s.
  • the target-substrate distance was 86 mm.
  • the obtained second admittance adjusting layer was 30 nm.
  • the refractive index of light with a wavelength of 570 nm of Nb 2 O 5 was 2.31, and the refractive index of light with a wavelength of 570 nm of the second admittance adjusting layer was 2.31.
  • a first admittance adjusting layer / transparent metal film / second admittance adjusting layer was formed on a transparent support made of Toyobo PET (Cosmo Shine A4300 thickness 50 ⁇ m).
  • the obtained transparent conductor is disposed and used in contact with air.
  • the spectral characteristics of the obtained transparent conductor are shown in FIG. 46A, and the admittance locus of the transparent conductor at a wavelength of 570 nm is shown in FIG. 46B.
  • Nb 2 O 5 was RF-sputtered using Arnelva L-430S-FHS at Ar 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 0.74 ⁇ / s.
  • the target-substrate distance was 86 mm.
  • the obtained first admittance adjusting layer was 27.7 nm.
  • the refractive index of light with a wavelength of 570 nm of Nb 2 O 5 is 2.31
  • the refractive index of light with a wavelength of 570 nm of the first admittance adjustment layer is 2.31.
  • Transparent metal film DC sputtering was performed with a small sputtering apparatus (BC4279) manufactured by Nippon Vacuum Technology Co., Ltd. At this time, the target side power was set to 200 W. The film thickness of the obtained transparent metal film was 8 nm.
  • IZO (Second admittance adjustment layer) Using an Anelva L-430S-FHS, IZO was RF sputtered at Ar 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 2.2 L / s. The target-substrate distance was 86 mm. The obtained second admittance adjusting layer was 36 nm. The refractive index of light having a wavelength of 570 nm of IZO was 2.05, and the refractive index of light having a wavelength of 570 nm of the second admittance adjusting layer was 2.05.
  • Table 6 shows the transmittance, reflectance, absorptance, a * value and b * value in the L * a * b * color system, and surface electrical resistance of the obtained transparent conductor.
  • Table 6 also shows the difference ⁇ H (haze degradation) between the haze value H stack of the transparent conductor and the haze value H sub of the transparent support material. These were measured in the same manner as in Example A-1.
  • the average absorption rate of light having a wavelength of 400 to 800 nm is 8.5% or less, The maximum value of the absorption rate was also 10.3% or less. This is because the plasmon absorption can be sufficiently suppressed by laminating the low refractive index layer even if the transparent metal film (Ag film) is thin.
  • Comparative Example C-1 in which silver nanowires were formed, the surface electrical resistance was high and haze degradation was also large. Further, in Comparative Example C-2 in which no low refractive index layer is formed, the average absorptance is 9.1%, and it is assumed that plasmon absorption is not sufficiently suppressed.
  • Example D-1 A transparent support (Yamanaka Semiconductor's white board ( ⁇ 30 mm, thickness 2 mm)) was prepared, and this was subjected to ultrasonic cleaning in ultrapure water (Ultrapure water device Synergy UV manufactured by Millipore). As a sonic cleaning machine, VS-100III manufactured by ASONE was used.
  • the photocatalyst layer (TiO 2 ) was applied to the transparent support material after cleaning with an electron beam by a BMC-800T vapor deposition machine manufactured by Syncron Co., Ltd. with oxygen introduced (2 ⁇ 10 ⁇ 2 Pa), 320 mA, and a film formation rate of 3 ⁇ / s. EB) Vapor deposition.
  • the resulting photocatalyst layer had a thickness of 33 nm.
  • a platinum palladium film was formed on the photocatalyst layer for 0.4 seconds with a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Co., thereby forming a growth nucleus having an average thickness of 0.2 nm.
  • MSP-1S magnetron sputtering apparatus
  • the average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
  • Ag was vapor-deposited by a BMC-800T vapor deposition machine (210A resistance heating) manufactured by SYNCHRON, and a transparent metal film (9 nm) made of Ag was obtained.
  • the film formation rate was 5 ⁇ / s.
  • the transparent metal film was irradiated with light having a wavelength of 350 nm from the transparent metal film side.
  • the exposure amount was 8000 mJ / m 2 .
  • the light irradiation was performed through an exposure mask.
  • As the exposure mask a glass substrate in which chromium was formed in a pattern was used.
  • the light irradiation pattern was the pattern shown in the schematic diagram of FIG. 48 (the line width of the light irradiation portion was 0.02 mm). Thereafter, the transparent metal film was placed in pure water and subjected to ultrasonic cleaning, and the transparent metal film in the light irradiation region was removed.
  • Example D-2 A transparent conductor was produced in the same manner as in Example D-1, except that the transparent metal film was produced by the following method.
  • Method for forming transparent metal film An alloy in which 2 at% Zn (zinc) was added to Ag (silver) was prepared.
  • a sputtering apparatus manufactured by Anelva: L-430S-FHS
  • argon introduced (20 sccm)
  • a sputtering pressure of 0.3 Pa at room temperature a target-side power of 125 W, a deposition rate of 2.2 ⁇ / s.
  • the alloy was subjected to radio frequency (RF) sputtering.
  • the thickness of the obtained transparent metal film was 9 nm.
  • Example D-3 A transparent conductor was produced in the same manner as in Example D-1, except that the transparent metal film was produced by the following method.
  • Method for forming transparent metal film An alloy in which 0.5 at% Au (gold) was added to Ag (silver) was prepared.
  • a sputtering apparatus manufactured by Anelva: L-430S-FHS
  • argon introduced (20 sccm)
  • a sputtering pressure of 0.3 Pa at room temperature a target-side power of 125 W, a deposition rate of 2.2 ⁇ / s.
  • the alloy was subjected to radio frequency (RF) sputtering.
  • the thickness of the obtained transparent metal film was 9 nm.
  • Example D-4 A transparent conductor was produced in the same manner as in Example D-1, except that the transparent metal film was produced by the following method.
  • Method for forming transparent metal film An alloy in which 1 at% Cu (copper) was added to Ag (silver) was prepared.
  • a sputtering apparatus manufactured by Anelva: L-430S-FHS
  • argon introduced (20 sccm)
  • a sputtering pressure of 0.3 Pa at room temperature a target-side power of 125 W, a deposition rate of 2.2 ⁇ / s.
  • the alloy was subjected to radio frequency (RF) sputtering.
  • the thickness of the obtained transparent metal film was 9 nm.
  • Example D-5 A transparent conductor was produced in the same manner as in Example D-1, except that the transparent metal film was produced by the following method.
  • Method for forming transparent metal film An alloy in which 15 at% Al (aluminum) was added to Ag (silver) was prepared.
  • a sputtering apparatus manufactured by Anelva: L-430S-FHS
  • argon introduced (20 sccm)
  • a sputtering pressure of 0.3 Pa at room temperature a target-side power of 125 W, a deposition rate of 2.2 ⁇ / s.
  • the alloy was subjected to radio frequency (RF) sputtering.
  • the thickness of the obtained transparent metal film was 9 nm.
  • Measuring light (light having a wavelength of 450 nm to 800 nm) was incident on the front surface of the transparent conductor at an angle of 5 °, and the average light transmittance was measured with a spectrophotometer U4100 manufactured by Hitachi, Ltd. The measurement light was incident from the transparent metal film side.
  • any transparent metal film (region not irradiated with light) passed through the region from which the transparent metal film was removed (region irradiated with light). There was no continuity. That is, it was confirmed that the transparent metal film in the region irradiated with light was completely removed. Moreover, when the said transparent metal film was confirmed visually, the line was confirmed in the pattern shape which irradiated the light. Further, as shown in Table 7, when the Ag ratio in the Ag alloy is 90 at% or more, the average transmittance of light having a wavelength of 450 nm to 800 nm exceeds 60%, and the transparency of the transparent conductor is good. there were.
  • Example D-6 A transparent conductor was produced in the same manner as in Example D-1, except that the thickness of the transparent metal film was 4 nm.
  • Example D-7 A transparent conductor was produced in the same manner as in Example D-1, except that the thickness of the transparent metal film was 5 nm.
  • Example D-8 A transparent conductor was produced in the same manner as in Example D-1, except that the thickness of the transparent metal film was 15 nm.
  • Example D-9 A transparent conductor was produced in the same manner as in Example D-1, except that the thickness of the transparent metal film was 16 nm.
  • any transparent metal film (region not irradiated with light) is adjacent to the transparent metal film through the region where the transparent metal film is removed (region irradiated with light). There was no continuity. That is, it was confirmed that the transparent metal film in the region irradiated with light was completely removed. Moreover, when the said transparent metal film was confirmed visually, the line was confirmed in the pattern shape which irradiated the light.
  • the thickness of the transparent metal film (Ag) was 5 nm or more, the surface electrical resistance was 30 ⁇ / ⁇ or less, and sufficient conduction was obtained. Further, when the thickness of the transparent metal film (Ag) was 15 nm or less, the average transmittance of light having a wavelength of 450 nm to 800 nm exceeded 50%, and the transparency of the transparent conductor was improved. When the thickness of the transparent metal film exceeds 15 nm, it is presumed that Ag inherent reflection occurred and the average transmittance was lowered.
  • FIG. 50 shows the transmittance, absorptivity, and transmittance of light with a wavelength of 400 nm to 800 nm of the transparent conductor of Example D-6 (when the thickness of the transparent metal film is 4 nm).
  • the light absorptivity was measured with a spectrophotometer in the same manner as the transmittance. The light absorptance was determined by 100 ⁇ (transmittance + reflectance).
  • FIG. 50 shows the transmittance, absorption rate, and transmittance of light with a wavelength of 400 nm to 800 nm of the transparent conductor in Example D-7 (when the transparent metal film is 5 nm).
  • Example D-10 As in Example D-1, a transparent support material, a photocatalyst layer, and a transparent metal film were prepared, and the transparent metal film was irradiated with light in a pattern. Thereafter, the transparent metal film was subjected to ultrasonic cleaning in the same manner as in Example D-1. Furthermore, the following high refractive index layer was produced on the transparent metal film.
  • ITO High refractive index layer
  • ITO was sputter-deposited by magnetron sputtering manufactured by Osaka Vacuum Co., Ltd. to form a high refractive index layer (36 nm) made of ITO.
  • the film formation rate was 10 ⁇ / s.
  • Example D-1 Similar to Example D-1, the conduction between adjacent transparent metal films (areas not irradiated with light) through the areas where the transparent metal film was removed (areas irradiated with light) was formed after the formation of the high refractive index layer. As a result of confirmation, there was no conduction between adjacent transparent metal films (areas not irradiated with light) through the areas where the transparent metal film was removed (areas irradiated with light). Further, as in Examples D-2 to D-5, when the average transmittance of the transparent conductor at a wavelength of 450 nm to 800 nm was measured, the average transmittance was 85% and the transparency was very high.
  • Example E-1 to E-9 and Comparative Examples E-1 to E-3 the average light absorptance of the transparent metal film was measured as follows. The method for measuring the thickness of the film and the method for measuring the surface electrical resistance are the same as in Example A-1.
  • Measured light for example, light having a wavelength of 450 nm to 800 nm
  • a transparent conductor including a transparent support material and a transparent metal film formed on the surface of the transparent conductor from an angle of 5 °.
  • Light transmittance and reflectance were measured with a spectrophotometer U4100.
  • the absorptance was calculated from a formula of 100 ⁇ (transmittance + reflectance).
  • the measurement light was incident from the transparent metal film side.
  • the absorption rate of the transparent metal film was calculated by subtracting the absorption rate (reference data) of the transparent support material measured separately from the absorption rate of the transparent conductor.
  • Example E-1 A transparent support material made of a white plate and an Ag target were placed in a vacuum chamber of a sputtering apparatus manufactured by Osaka Vacuum. Then, Ag was RF-sputtered at Ar 20 sccm, sputtering pressure 0.5 Pa, room temperature, target-side power (RF) 250 W, and deposition rate 1.6 nm / s (step A). On the other hand, as shown in the timing chart of FIG. 59, during the period from the start of film formation to the end of film formation, power is also applied to the transparent support material side (substrate-side power (RF) 35 W).
  • RF target-side power
  • the transparent metal film formed above was reverse sputtered at an etching rate of 0.1 nm / s (step B). As a result, the actual film formation rate was 1.5 nm / s.
  • the target-substrate distance was 80 mm.
  • An SEM (scanning electron microscope) image of the obtained transparent metal film is shown in FIG.
  • the film thickness of the obtained transparent metal film (Ag film) was 6 nm.
  • Example E-2 A transparent conductor was obtained in the same manner as in Example E-1, except that the substrate-side power (RF) was 50 W and the film formation rate was the value shown in Table 9. An SEM (scanning electron microscope) image of the obtained transparent metal film is shown in FIG. The film thickness of the obtained transparent metal film (Ag film) was 6 nm.
  • Example E-3 A transparent support material made of a white plate and an Ag target were placed in a vacuum chamber of a sputtering apparatus (L-430S-FHS) manufactured by Anelva. Then, Ag was DC-sputtered at Ar 20 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power (DC) 125 W, and film formation rate 0.57 m / s (step A). On the other hand, during the period from the start of film formation to the end of film formation, power is also applied to the transparent support material side (substrate-side power (RF) 15 W), and the transparent metal film formed on the transparent support material is etched.
  • RF substrate-side power
  • Reverse sputtering was performed at a rate of 0.01 nm / s (step B). As a result, the actual film formation rate was 0.56 nm / s. The target-substrate distance was 86 mm. An SEM (scanning electron microscope) image of the obtained transparent metal film is shown in FIG. Moreover, the film thickness of the obtained transparent metal film (Ag film) was 6 nm.
  • Example E-4 A transparent conductor was obtained in the same manner as in Example E-3 except that the substrate-side power (RF) was 25 W and the film formation rate was the value shown in Table 9.
  • FIG. 56 shows an SEM (scanning electron microscope) image of the obtained transparent metal film. Moreover, the film thickness of the obtained transparent metal film (Ag film) was 6 nm.
  • Example E-5 A transparent support material in which a layer (27.7 nm) made of Nb 2 O 5 was formed on Toyobo PET (Cosmo Shine A4300, thickness 50 ⁇ m) was prepared. A transparent conductor was obtained in the same manner as in Example E-2 except that the transparent support material was used. The film thickness of the obtained transparent metal film (Ag film) was 6 nm.
  • the layer made of Nb 2 O 5 uses L-430S-FHS manufactured by Anelva, Ar 20 sccm, O 2 5 sccm, sputtering pressure 0.3 Pa, room temperature, target side power 300 W, and deposition rate 0.74 ⁇ / s. Nb 2 O 5 was obtained by RF sputtering. At this time, the distance between the target and the substrate was 86 mm.
  • Example E-6 A transparent support material made of a white plate and an Ag target were placed in a vacuum chamber of a sputtering apparatus manufactured by Osaka Vacuum. Then, Ag was RF-sputtered at Ar 20 sccm, sputtering pressure 0.5 Pa, room temperature, target-side power (RF) 250 W, and deposition rate 1.6 nm / s (step A). As shown in the timing chart of FIG.
  • step B After 2.5 seconds have elapsed from the start of film formation of the Ag film (after the Ag film is formed to 4 nm), power is also applied to the transparent support material side (substrate side power (RF) 50 W), a transparent metal film formed on the transparent support material was reverse sputtered (step B).
  • the target-substrate distance was 80 mm.
  • the film thickness of the obtained transparent metal film (Ag film) was 7 nm.
  • Non-Patent Document 1 a transparent support in which a layer (27.7 nm) made of Nb 2 O 5 was formed on PET made by Toyobo (Cosmo Shine A4300 thickness 50 ⁇ m) as in Example E-6 The material was prepared. The transparent support material was placed in a small sputtering apparatus (BC4279) manufactured by Nippon Vacuum Technology Co., Ltd. Then, Ag was DC sputtered at Ar 20 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power (DC) 200 W, and deposition rate 6.7 nm / s.
  • BC4279 small sputtering apparatus manufactured by Nippon Vacuum Technology Co., Ltd.
  • Ag was DC sputtered at Ar 20 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power (DC) 200 W, and deposition rate 6.7 nm / s.
  • Example E-2 A transparent conductor was obtained in the same manner as in Example E-1, except that the reverse sputtering (step B) of the transparent metal film was not performed. An SEM (scanning electron microscope) image of the obtained transparent metal film is shown in FIG. The film thickness of the obtained transparent metal film (Ag film) was 6 nm.
  • Example E-3 A transparent conductor was obtained in the same manner as in Example E-3, except that the reverse sputtering (step B) of the transparent metal film was not performed. An SEM (scanning electron microscope) image of the obtained transparent metal film is shown in FIG. The film thickness of the obtained transparent metal film (Ag film) was 6 nm.
  • Example E-5 had a higher average of transparent metal films. Absorption rate was low.
  • the thickness of the transparent metal film was smaller in Example E-5 than in Comparative Example E-1, these surface electric resistance values were equivalent.
  • the transparent metal film of Example E-5 has high smoothness, and it is presumed that sufficient conduction was obtained even with a thin film.
  • Example E-2 which was reverse sputtered when the transparent metal film was 3 nm or less was compared with Example E-6 which was reverse sputtered after the transparent metal film became 4 nm, The average absorption rate of the transparent metal film was lower, and the surface electrical resistance was also lower.
  • reverse sputtering is performed with the transparent metal film being thin, very fine growth nuclei are formed on the transparent support; it is assumed that when the transparent metal film grows from the growth nuclei, a highly smooth film can be obtained. Is done.
  • Example E-7 A transparent support material made of a white plate and an Ag target were placed in a vacuum chamber of a sputtering apparatus manufactured by Osaka Vacuum.
  • a transparent metal film having a thickness of 0.37 nm was obtained by RF sputtering with Ag for 0.23 seconds at an Ar of 20 sccm, a sputtering pressure of 0.5 Pa, a room temperature, a target-side power (RF) of 250 W, and a deposition rate of 1.6 nm / s. Was formed (step A).
  • the target-substrate distance was 80 mm.
  • the above-mentioned process A and process B were performed as one cycle, and 20 cycles were performed.
  • the total thickness of the obtained transparent metal film was 6 nm.
  • Example E-8 A transparent support material made of a white plate and an Ag target were placed in a vacuum chamber of a sputtering apparatus manufactured by Osaka Vacuum.
  • a transparent metal film having a thickness of 0.74 nm was obtained by RF sputtering with Ag for 0.46 seconds at Ar 20 sccm, sputtering pressure 0.5 Pa, room temperature, target-side power (RF) 250 W, and film formation rate 1.6 nm / s. Was formed (step A).
  • the target-substrate distance was 80 mm.
  • power substrate-side power (RF) 50 W
  • the above-mentioned process A and process B were made into 1 cycle, and 10 cycles were performed.
  • the total thickness of the obtained transparent metal film was 6 nm.
  • Example E-9 A transparent support material made of a white plate and an Ag target were placed in a vacuum chamber of a sputtering apparatus manufactured by Osaka Vacuum.
  • a transparent metal film having a thickness of 0.37 nm was obtained by RF sputtering with Ag for 0.23 seconds at an Ar of 20 sccm, a sputtering pressure of 0.5 Pa, a room temperature, a target-side power (RF) of 250 W, and a deposition rate of 1.6 nm / s.
  • the target-substrate distance was 80 mm.
  • the above-mentioned process A and process B were made into 1 cycle, and 16 cycles were performed.
  • the total thickness of the obtained transparent metal film was 6 nm.
  • the thickness of the transparent metal film was about 6 nm.
  • the average absorption rate of the transparent metal film was 8.4% or less, and the maximum value of the absorption rate was 9.1% or less.
  • the thickness Y of the transparent metal film after completion of the first step B is 95% or less of the thickness X of the transparent metal film formed in the first step A.
  • the surface electric resistance value was sufficiently low at 16 ⁇ / ⁇ . In these examples, it is speculated that very fine growth nuclei were formed on the transparent support material by reverse sputtering; a highly smooth film was obtained because the transparent metal film grew from the growth nuclei. .
  • the transparent conductor obtained by the present invention has a low surface electric resistance value and excellent transparency. Therefore, it is preferably used for various types of optoelectronic devices such as various types of displays, touch panels, mobile phones, electronic paper, various types of solar cells, and various types of electroluminescent light control elements.

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  • Non-Insulated Conductors (AREA)
  • Laminated Bodies (AREA)

Abstract

Un problème devant être abordé par la présente invention est la fourniture d'un conducteur transparent qui soit doté d'une faible résistance électrique superficielle et d'une translucidité élevée. Afin de résoudre ce problème, la présente invention a trait à un conducteur transparent qui est caractérisé en ce que : le conducteur transparent est doté d'un matériau de support transparent, d'une première couche de réglage d'admittance, d'un film métallique transparent, et d'une seconde couche de réglage d'admittance, empilés dans cet ordre ; le film métallique transparent est pourvu d'une épaisseur inférieure ou égale à 15 nm ; la première couche de réglage d'admittance et la seconde couche de réglage d'admittance incluent soit un matériau diélectrique soit un matériau semi-conducteur d'oxyde ; le conducteur transparent est doté d'une vitesse d'absorption moyenne de la lumière dotée d'une longueur d'onde de 400 à 800 nm inférieure ou égale à 15 %, et d'une valeur maximale de sa vitesse d'absorption inférieure ou égale à 25 % ; et, avec Y1 = x1 + iy1 représentant l'admittance optique de la lumière dotée d'une longueur d'onde de 570 nm à la limite entre le film métallique transparent et la première couche de réglage d'admittance, et Y2 = x2 + iy2 représentant l'admittance optique de la lumière dotée d'une longueur d'onde de 570 nm à la limite entre le film métallique transparent et la seconde couche de réglage d'admittance, x1 et/ou x2 est supérieur ou égal à 1,6.
PCT/JP2013/006276 2012-10-24 2013-10-23 Conducteur transparent WO2014064939A1 (fr)

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WO2014167835A1 (fr) * 2013-04-08 2014-10-16 コニカミノルタ株式会社 Conducteur transparent
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JP2017068219A (ja) * 2015-10-02 2017-04-06 株式会社コベルコ科研 電極構造
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JP2016018288A (ja) * 2014-07-07 2016-02-01 コニカミノルタ株式会社 透明導電体及びタッチパネル
JP2017068219A (ja) * 2015-10-02 2017-04-06 株式会社コベルコ科研 電極構造
CN108646321A (zh) * 2018-05-09 2018-10-12 中国科学院长春光学精密机械与物理研究所 一种二维材料正入射菲涅尔光学表征方法
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