WO2014064939A1

WO2014064939A1 - Transparent conductor

Info

Publication number: WO2014064939A1
Application number: PCT/JP2013/006276
Authority: WO
Inventors: 一成多田; 清司湯浅; 仁一粕谷; 敏幸木下; 和央吉田; 岩垣　賢; 川原　雄介; 泰宏渡辺; 片倉　利恵; 秀謙尾関; 貴之飯島
Original assignee: コニカミノルタ株式会社
Priority date: 2012-10-24
Filing date: 2013-10-23
Publication date: 2014-05-01

Abstract

A problem to be addressed by the present invention is to provide a transparent conductor with low surface electrical resistance and high translucence. To solve the problem, a transparent conductor is configured such that: the transparent conductor has a transparent support material, a first admittance adjustment layer, a transparent metal film, and a second admittance adjustment layer, stacked in this order; the transparent metal film is 15nm or less in thickness; the first admittance adjustment layer and the second adjustment layer include either a dielectric material or an oxide semiconductor material; the transparent conductor has an average absorption rate of light of 400-800nm wavelength of 15% or less, and a maximum value for the absorption rate thereof of 25% or less; and, with Y1=x₁+iy₁ representing the optical admittance of light of 570nm wavelength at the boundary between the transparent metal film and the first admittance adjustment layer, and Y2=x₂+iy₂ representing the optical admittance of light of 570nm wavelength at the boundary between the transparent metal film and the second admittance adjustment layer, x₁ and/or x₂ is 1.6 or greater.

Description

Transparent conductor

The present invention relates to a transparent conductor.

Transparent conductive films are used in various devices such as electrode materials for display devices such as liquid crystal displays, plasma displays, inorganic and organic EL (electroluminescence) displays, electrode materials for inorganic and organic EL elements, touch panel materials, and solar cell materials. ing.

As a constituent material of such a transparent conductive film, metals such as Au, Ag, Pt, Cu, Rh, Pd, Al, and Cr, In ₂ O ₃ , CdO, CdIn ₂ O ₄ , Cd ₂ SnO ₄ , TiO ₂ , Oxide semiconductors such as SnO ₂ and ZnO are known. Among these, a transparent conductive film made of an indium tin oxide (ITO) film is frequently used from the viewpoint of light transmittance and conductivity.

In recent years, a capacitive touch panel has been developed, and in this method, a transparent conductive film having a low surface electrical resistance value and high transparency is required. However, with an ITO film, it is difficult to sufficiently reduce the surface electrical resistance value. In addition, the ITO film is easily broken and cannot be applied to applications that require flexibility.

Therefore, a transparent conductive film in which Ag is arranged in a mesh shape has been proposed as a transparent conductive film replacing ITO (Patent Document 1). However, the transparent conductive film of Patent Document 1 has an Ag mesh width of about 20 μm. Therefore, the Ag mesh is easily visible and cannot be applied to uses that require high transparency. Furthermore, although there was conduction in the mesh portion, there was no conduction in the gap portion of the mesh, and the surface electric resistance value could not be lowered sufficiently.

A transparent conductive film containing Ag nanowires has also been proposed (Patent Document 2). However, the transparent conductive film has a large surface electric resistance value, and the thickness of the transparent conductive film needs to be about 200 nm. For this reason, it has been difficult to apply the transparent conductive film to uses that require flexibility.

Furthermore, it has also been proposed to use an Ag thin film as a transparent conductive film (Patent Document 3). However, it has been difficult for the Ag thin film to achieve both a low surface electric resistance value and a high light transmittance. If the thickness of the Ag thin film is increased in order to increase the surface electrical resistance value, Ag inherent reflection occurs and the light transmittance is lowered. On the other hand, if the Ag thin film is thinned in order to increase the light transmittance, sufficient conduction cannot be obtained. Further, there is a problem that plasmon absorption occurs and the transmittance of the transparent conductive film is lowered. Therefore, in order to improve the light transmittance of the transparent conductor including the Ag film, a laminate of niobium oxide (Nb ₂ O ₅ ) film / Ag film / IZO (indium zinc oxide) film has also been proposed (non-patent document). Reference 1).

On the other hand, etching is generally used as a patterning method for the transparent conductive film. However, this method has a problem that a resist pattern must be prepared or treated with an etching solution, and the process is complicated.

In response to such a problem, a method of forming a transparent metal film in a pattern using a photocatalyst has been proposed (Patent Document 4). In this technique, the photocatalyst layer formed on the substrate is irradiated with light in a pattern to change the wettability of the photocatalyst layer. And the liquid for forming a transparent conductive film is made to adhere in a pattern shape using the wettability difference of a light irradiation part and a non-irradiation part.

JP 2012-53644 A Special table 2009-505358 Special table 2011-508400 gazette JP 2003-309344 A

As in Non-Patent Document 1, it has been studied to stack an insulating film on an Ag thin film and increase the light transmittance of a transparent conductor including the Ag thin film. However, even if an insulating film is formed on the Ag thin film, there is a problem that the reflectance of the surface of the laminate is not sufficiently lowered and the light transmittance is hardly increased. Accordingly, an object of the present invention is to provide a transparent conductor having a high light transmittance and a low surface electric resistance value.

Further, when the transparent conductive film is patterned by the technique of Patent Document 4, the liquid for forming the transparent conductive film is likely to adhere to a region other than the desired region; there is a problem that it is difficult to form a fine pattern. there were. Therefore, it is also demanded to provide a method for producing a transparent conductor capable of forming a fine metal pattern by a simple method.

That is, the first of the present invention relates to the following transparent conductor.
[1] A transparent conductor in which a transparent support material, a first admittance adjusting layer, a transparent metal film, and a second admittance adjusting layer are laminated in this order, and the transparent metal film has a thickness of 15 nm or less. The first admittance adjusting layer and the second admittance adjusting layer include a dielectric material or an oxide semiconductor material, and the transparent conductor has an average absorption rate of light having a wavelength of 400 nm to 800 nm of 15% or less and absorption The maximum value of the ratio is 25% or less, the optical admittance at the wavelength 570 nm of the interface on the first admittance adjustment layer side of the transparent metal film is Y1 = x ₁ + ii ₁ , and the second admittance adjustment layer of the transparent metal film when representing the optical admittance of wavelength 570nm of the interface side with Y2 ₌ x ₂ + iy 2, at least one of _{x 1} and _{x 2} is 1. Or more, a transparent conductor.

The second of the present invention relates to the following transparent conductor.
[2] A transparent conductor in which a transparent support material, an underlayer, a first admittance adjustment layer, a transparent metal film, and a second admittance adjustment layer are laminated in this order, and the first of the underlayer the optical admittance of wavelength 570nm admittance adjusting layer side of the surface when expressed in _{_{Y0 = x 0 + iy 0,}} x 0 is the refractive index value smaller than the light wavelength 570nm of the transparent support, the first admittance adjusting The layer and the second admittance adjusting layer include a dielectric material or an oxide semiconductor material having a refractive index higher than a refractive index of light having a wavelength of 570 nm of the transparent support material, and the transparent metal film has a thickness of 15 nm or less, the optical admittance Y1 ₌ x ₁ + iy 1 wavelength 570nm of the first admittance adjusting layer-side surface of the transparent metal film, the said transparent metal film When representing the optical admittance of wavelength 570nm of the two admittance adjusting layer side surface Y2 ₌ x 2 + iy _2, at least one of _{x 1} and _{x 2} is 1.8 or more, the wavelength 400 nm ~ transparent conductor A transparent conductor having an average absorptance of 800 nm light of 10% or less and a maximum absorptance of light having a wavelength of 450 nm to 800 nm of 15% or less.

The third of the present invention relates to the following transparent conductor.
[3] A transparent conductor in which a transparent support material, a first admittance adjustment layer, a transparent metal film, and a second admittance adjustment layer are laminated in this order, and the first admittance adjustment layer and the second The admittance adjusting layer includes a dielectric material or an oxide semiconductor material having a refractive index higher than that of light having a wavelength of 570 nm of the transparent support material, and the first admittance adjusting layer is formed on at least one surface of the transparent metal film. And a low refractive index layer comprising a material having a refractive index of light having a wavelength of 570 nm lower than that of the dielectric material or oxide semiconductor material included in the second admittance adjusting layer and having a thickness of 0.1 to 15 nm. Further, a transparent conductor.

According to the present invention, a transparent conductor having both a low surface electric resistance value and high transparency can be obtained.

It is a schematic sectional drawing which shows the layer structure of the transparent conductor of the 1st aspect of this invention. It is a schematic sectional drawing which shows the layer structure of the transparent conductor of the 2nd aspect of this invention. It is a schematic sectional drawing which shows the layer structure of the transparent conductor of the 3rd aspect of this invention. FIG. 4A shows a transparent conductor (transparent support material (glass substrate) / first admittance adjusting layer (TiO ₂ ) / transparent metal film (Ag) / second admittance adjusting layer (TiO ₂ ) / third according to the first embodiment. is a graph showing the admittance locus at a wavelength 570nm admittance adjusting layer transparent conductor comprising (SiO _2)). FIG. 4B shows the transparent conductor of the first embodiment (transparent support material (glass substrate) / first admittance adjusting layer (TiO ₂ ) / transparent metal film (Ag) / second admittance adjusting layer (TiO ₂ ) / third. is a graph showing the relationship between the optical length and the electric field of the admittance adjustment layer transparent conductor comprising (SiO _2)). FIG. 5 (a) is a graph showing an admittance locus at a wavelength of 570 nm of a transparent conductor comprising a transparent support material / transparent metal film / admittance adjusting layer, and FIG. 5 (b) shows a wavelength of 450 nm of the transparent conductor, It is a figure which shows the optical admittance in wavelength 570nm and wavelength 700nm. FIG. 6A is a graph showing an admittance locus at a wavelength of 570 nm of the transparent conductor (transparent support / first admittance adjusting layer / transparent metal film / transparent conductor having the second admittance adjusting layer) of the first embodiment. FIG. 6B is a diagram illustrating optical admittance of the transparent conductor at a wavelength of 450 nm, a wavelength of 570 nm, and a wavelength of 700 nm. FIG. 7 shows the transparent conductor of the first embodiment (transparent support material (glass substrate) / first admittance adjusting layer (TiO ₂ ) / transparent metal film (Ag) / second admittance adjusting layer (TiO ₂ ) / third. admittance wavelength 450nm adjustment layer (SiO ₂₎ a transparent conductor comprising) is a graph showing 570 nm, and the admittance locus in 700 nm. FIG. 8 shows the transparent conductor (transparent support material (glass substrate) / underlayer (MgF ₂ ) / first admittance adjustment layer (TiO ₂ ) / transparent metal film (Ag) / second admittance adjustment layer of the second embodiment. is a graph showing the admittance locus of wavelength 570nm of the transparent conductor) with a (TiO _2). FIG. 9A is a graph showing the spectral characteristics of the transparent conductor of the third aspect (transparent conductor produced in Example C-1). FIG. 9B is a graph showing an optical admittance locus at a wavelength of 570 nm of the transparent conductor of the third embodiment (the transparent conductor produced in Example C-1). It is a schematic sectional drawing which shows an example of the transparent conductor obtained with the manufacturing method of the transparent conductor of this invention. FIG. 11 is a graph in which only the plasmon absorption rate is extracted from the absorption rate of the transparent metal film produced in Experimental Example 1. FIG. 12 is a graph in which only the plasmon absorption rate is extracted from the absorption rate of the transparent metal film produced in Experimental Example 2. FIG. 13 is a graph in which only the plasmon absorption rate is extracted from the absorption rate of the transparent metal film produced in Experimental Example 3. FIG. 14 is a graph in which only the plasmon absorption rate is extracted from the absorption rate of the transparent metal film produced in Experimental Example 4. FIG. 15A is a graph showing the spectral characteristics of the transparent conductor produced in Example A-1. FIG. 15B is a graph showing an admittance locus at a wavelength of 570 nm of the transparent conductor produced in Example A-1. FIG. 16A is a graph showing the spectral characteristics of the transparent conductor produced in Example A-2. FIG. 16B is a graph showing an admittance locus at a wavelength of 570 nm of the transparent conductor produced in Example A-2. FIG. 17A is a graph showing the spectral characteristics of the transparent conductor produced in Example A-3. FIG. 17B is a graph showing an admittance locus at a wavelength of 570 nm of the transparent conductor produced in Example A-3. FIG. 18A is a graph showing the spectral characteristics of the transparent conductor produced in Example A-4. FIG. 18B is a graph showing an admittance locus at a wavelength of 570 nm of the transparent conductor produced in Example A-4. FIG. 19A is a graph showing the spectral characteristics of the transparent conductor produced in Comparative Example A-1. FIG. 19B is a graph showing an admittance locus at a wavelength of 570 nm of the transparent conductor produced in Comparative Example A-1. FIG. 20A is a graph showing the spectral characteristics of the transparent conductor produced in Comparative Example A-2. FIG. 20B is a graph showing an admittance locus at a wavelength of 570 nm of the transparent conductor produced in Comparative Example A-2. FIG. 21A is a graph showing the spectral characteristics of the transparent conductor produced in Example A-5. FIG. 21B is a graph showing an admittance locus at a wavelength of 570 nm of the transparent conductor produced in Example A-5. FIG. 22A is a graph showing the spectral characteristics of the transparent conductor produced in Example A-6. FIG. 22B is a graph showing an admittance locus at a wavelength of 570 nm of the transparent conductor produced in Example A-6. FIG. 23 is a graph showing an admittance locus at a wavelength of 570 nm of the transparent conductor produced in Example A-7. FIG. 24 is a graph showing the spectral characteristics of the transparent conductor produced in Comparative Example A-3. FIG. 25A is a graph showing the spectral characteristics of the transparent conductor produced in Example B-1. FIG. 25B is a graph showing admittance trajectories of the transparent conductor produced in Example B-1 at a wavelength of 450 nm, a wavelength of 570 nm, and a wavelength of 700 nm. FIG. 26A is a graph showing the spectral characteristics of the transparent conductor produced in Example B-2. FIG. 26B is a graph showing the admittance locus of the transparent conductor produced in Example B-2 at a wavelength of 450 nm, a wavelength of 570 nm, and a wavelength of 700 nm. FIG. 27A is a graph showing the spectral characteristics of the transparent conductor produced in Example B-3. FIG. 27B is a graph showing admittance trajectories of the transparent conductor produced in Example B-3 at a wavelength of 450 nm, a wavelength of 570 nm, and a wavelength of 700 nm. FIG. 28A is a graph showing the spectral characteristics of the transparent conductor produced in Example B-4. FIG. 28B is a graph showing an admittance locus at a wavelength of 570 nm of the transparent conductor produced in Example B-4. FIG. 29A is a graph showing the spectral characteristics of the transparent conductor produced in Example B-5. FIG. 29B is a graph showing an admittance locus at a wavelength of 570 nm of the transparent conductor produced in Example B-5. FIG. 30A is a graph showing the spectral characteristics of the transparent conductor produced in Example B-6. FIG. 30B is a graph showing admittance trajectories of the transparent conductor produced in Example B-6 at a wavelength of 450 nm, a wavelength of 570 nm, and a wavelength of 700 nm. FIG. 31 is a graph showing admittance loci of the transparent conductor produced in Example B-7 at wavelengths of 450 nm, 570 nm, and 700 nm. FIG. 32 is a graph showing admittance trajectories of the transparent conductor produced in Example B-8 at a wavelength of 450 nm, a wavelength of 570 nm, and a wavelength of 700 nm. FIG. 33A is a graph showing the spectral characteristics of the transparent conductor produced in Comparative Example B-2. FIG. 33B is a graph showing admittance trajectories of the transparent conductor produced in Comparative Example B-2 at a wavelength of 450 nm, a wavelength of 570 nm, and a wavelength of 700 nm. FIG. 34A is a graph showing the spectral characteristics of the transparent conductor produced in Example C-2. FIG. 34B is a graph showing an optical admittance locus at a wavelength of 570 nm of the transparent conductor produced in Example C-2. FIG. 35A is a graph showing the spectral characteristics of the transparent conductor produced in Example C-3. FIG. 35B is a graph showing an optical admittance locus of a transparent conductor produced in Example C-3 at a wavelength of 570 nm. FIG. 36A is a graph showing the spectral characteristics of the transparent conductor produced in Example C-4. FIG. 36B is a graph showing an optical admittance locus at a wavelength of 570 nm of the transparent conductor produced in Example C-4. FIG. 37A is a graph showing the spectral characteristics of the transparent conductor produced in Example C-5. FIG. 37B is a graph showing an optical admittance locus of the transparent conductor produced in Example C-5 at a wavelength of 570 nm. FIG. 38A is a graph showing the spectral characteristics of the transparent conductor produced in Example C-6. FIG. 38B is a graph showing an optical admittance locus at a wavelength of 570 nm of the transparent conductor produced in Example C-6. FIG. 39A is a graph showing the spectral characteristics of the transparent conductor produced in Example C-7. FIG. 39B is a graph showing an optical admittance locus at a wavelength of 570 nm of the transparent conductor produced in Example C-7. FIG. 40A is a graph showing the spectral characteristics of the transparent conductor produced in Example C-8. FIG. 40B is a graph showing an optical admittance locus at a wavelength of 570 nm of the transparent conductor produced in Example C-8. FIG. 41A is a graph showing the spectral characteristics of the transparent conductor produced in Example C-9. FIG. 41B is a graph showing an optical admittance locus of wavelength 570 nm of the transparent conductor produced in Example C-9. FIG. 42A is a graph showing the spectral characteristics of the transparent conductor produced in Example C-10. FIG. 42B is a graph showing an optical admittance locus at a wavelength of 570 nm of the transparent conductor produced in Example C-10. FIG. 43A is a graph showing the spectral characteristics of the transparent conductor produced in Example C-11. FIG. 43B is a graph showing an optical admittance locus of the transparent conductor produced in Example C-11 at a wavelength of 570 nm. FIG. 44A is a graph showing the spectral characteristics of the transparent conductor produced in Example C-12. FIG. 44B is a graph showing an optical admittance locus at a wavelength of 570 nm of the transparent conductor produced in Example C-12. FIG. 45A is a graph showing the spectral characteristics of the transparent conductor produced in Example C-13. FIG. 45B is a graph showing an optical admittance locus of wavelength 570 nm of the transparent conductor produced in Example C-13. FIG. 46A is a graph showing the spectral characteristics of the transparent conductor produced in Comparative Example C-2. FIG. 46B is a graph showing an optical admittance locus of a transparent conductor produced in Comparative Example C-2 at a wavelength of 570 nm. It is process drawing which shows an example of the manufacturing method of the transparent conductor of this invention. It is a schematic diagram which shows the irradiation pattern of the light in an Example. 7 is a graph showing the transmittance, absorption rate, and transmittance of light with a wavelength of 400 nm to 800 nm of a transparent conductor of Example D-6 (when the thickness of the transparent metal film is 4 nm). 7 is a graph showing the transmittance, absorption rate, and transmittance of light with a wavelength of 400 nm to 800 nm of the transparent conductor of Example D-7 (when the thickness of the transparent metal film is 5 nm). FIG. 51 is an example of a schematic view of a sputtering apparatus used in the first embodiment of the method for producing a transparent conductor of the present invention. 52 (A) and 52 (B) are examples of schematic views of a sputtering apparatus used in the second embodiment of the method for producing a transparent conductor of the present invention. FIG. 53 is an SEM (scanning electron microscope) image of the transparent metal film produced in Example E-1 of the present invention. FIG. 54 is an SEM (scanning electron microscope) image of the transparent metal film produced in Example E-2 of the present invention. FIG. 55 is an SEM (scanning electron microscope) image of the transparent metal film produced in Example E-3 of the present invention. FIG. 56 is an SEM (scanning electron microscope) image of the transparent metal film produced in Example E-4 of the present invention. FIG. 57 is an SEM (scanning electron microscope) image of the transparent metal film produced in Comparative Example E-2 of the present invention. FIG. 58 is an SEM (scanning electron microscope) image of the transparent metal film produced in Comparative Example E-3 of the present invention. FIG. 59 is a timing chart of Step A and Step B in the manufacturing method of Example E-1 of the present invention. FIG. 60 is a timing chart of Step A and Step B in the manufacturing method of Example E-6 of the present invention. FIG. 61 is a timing chart of Step A and Step B in the manufacturing method of Example E-7 of the present invention.

A. Transparent conductor Structure and physical properties of transparent conductor The transparent conductor of the present invention is applicable to panels of various display elements such as a touch panel, an organic EL element, and a solar battery. The transparent conductor of the present invention includes three modes having different layer configurations.

(1) About the transparent conductor of a 1st aspect The structure of the transparent conductor of a 1st aspect is shown in FIG. As shown in FIG. 1, the transparent conductor 100 of the first embodiment includes a transparent support material 1 / first admittance adjustment layer 2 / transparent metal film 3 / second admittance adjustment layer 4, and a transparent metal film 3 has a structure sandwiched between two

admittance adjusting layers

2 and 4.

In the transparent conductor 100 of the first aspect, the transparent metal film 2 is sandwiched between the two

admittance adjusting layers

2 and 4 so that the optical admittance of the transparent conductor 100 is adjusted as described later. As a result, light reflection on the surface of the transparent conductor 100 is suppressed, and the light transmittance of the transparent conductor 100 is increased.

The transparent conductor 100 of the first aspect may include a third admittance adjusting layer (not shown) formed on the second admittance adjusting layer 4. Furthermore, the transparent conductor 100 of the first aspect may include two or more transparent metal films. Further, another admittance adjusting layer may be sandwiched between the two transparent metal films. The other admittance adjustment layer may be the same layer as the first admittance adjustment layer and the second admittance adjustment layer.

(1-1) Transparent Support Material The transparent support material included in the transparent conductor can be the same as the transparent support material of various display devices. Transparent support materials include glass substrates, cellulose ester resins (for example, triacetylcellulose, diacetylcellulose, acetylpropionylcellulose, etc.), polycarbonate resins (for example, Panlite, Multilon (both manufactured by Teijin Limited)), cycloolefin resins (for example, ZEONOR (manufactured by Nippon Zeon), Arton (manufactured by JSR), APPEL (manufactured by Mitsui Chemicals)), acrylic resin (for example, polymethyl methacrylate, acrylite (manufactured by Mitsubishi Rayon), Sumipex (manufactured by Sumitomo Chemical)), Polyimide, phenol resin, epoxy resin, polyphenylene ether (PPE) resin, polyester resin (eg, polyethylene terephthalate, polyethylene naphthalate), polyether sulfone, ABS / AS resin, MBS resin, polystyrene, meta Lil resins, polyvinyl alcohol / EVOH (ethylene vinyl alcohol resins), may be a transparent resin film comprising a styrene block copolymer resin.

From the viewpoint of transparency, the transparent support material is a glass substrate, triacetyl cellulose, phenol resin, epoxy resin, polyphenylene ether (PPE) resin, polyether sulfone, ABS / AS resin, MBS resin, polystyrene, methacrylic resin, Polyvinyl alcohol / EVOH (ethylene vinyl alcohol resin) and styrene block copolymer resin are preferable.

The transparent support material preferably has high transparency to visible light; the average transmittance of light having a wavelength of 450 to 800 nm is preferably 70% or more, more preferably 80% or more, and 85% or more. More preferably it is. When the average light transmittance of the transparent support material is 80% or more, the average light transmittance of the entire transparent conductor is particularly likely to increase. The average absorption rate of light having a wavelength of 450 to 800 nm of the transparent support material is preferably 10% or less, more preferably 5% or less, and further preferably 3% or less.

The average light transmittance of the transparent support material is measured by making light incident from an angle inclined by 5 ° with respect to the front surface of the transparent support material. On the other hand, the average light absorptance of the transparent support material is measured by making the light incident from the same angle as the average transmittance and measuring the average reflectivity of the transparent support material. Then, the average absorptance is calculated as 100− (average transmittance + average reflectance). Average transmittance and average reflectance are measured with a spectrophotometer.

The refractive index of light with a wavelength of 510 nm of the transparent support material is preferably 1.40 to 1.95, more preferably 1.45 to 1.75, and still more preferably 1.45 to 1.70. . The refractive index of light having a wavelength of 570 nm of the transparent support material is also preferably 1.40 to 1.95, more preferably 1.45 to 1.75, and still more preferably 1.45 to 1.70. It is. The refractive index at each wavelength of the transparent support material is usually determined by the material of the transparent support material. The refractive index of the transparent support is measured with an ellipsometer.

The haze value of the transparent support material is preferably 0.01 to 2.5, more preferably 0.1 to 1.2. When the haze value of the transparent support material is 2.5 or less, the haze value of the transparent conductor is lowered. The haze value is measured with a haze meter.

The thickness of the transparent support material is preferably 1 μm to 20 mm, more preferably 10 μm to 2 mm. When the thickness of the transparent support material is 1 μm or more, the strength of the transparent support material is increased, and it is difficult to crack or tear the first admittance adjusting layer. On the other hand, if the thickness of the transparent support material is 20 mm or less, the flexibility of the transparent conductor is sufficient, and the thickness of the device using the transparent conductor can be reduced. Moreover, the apparatus using a transparent conductor can also be reduced in weight.

(1-2) First Admittance Adjustment Layer The first admittance adjustment layer is a layer containing a dielectric material or an oxide semiconductor material, and in this embodiment, between the transparent support material and the transparent metal film and the transparent metal film. And a layer formed adjacent to each other.

The refractive index of light having a wavelength of 510 nm of the first admittance adjusting layer is preferably larger than 1.5, more preferably 1.7 to 2.5, and still more preferably 1.9 to 2.5. As will be described later, when the refractive index of the first admittance adjusting layer is higher than 1.5, the light transmittance of the transparent conductor is likely to increase. The refractive index of the first admittance adjusting layer is preferably larger than the refractive index of the transparent support, and the refractive index difference is preferably 0.1 to 1.1, and 0.4 to 1.0. It is more preferable that The refractive index of the first admittance adjusting layer is measured with an ellipsometer. The refractive index of the first admittance adjusting layer is adjusted by the material constituting the first admittance adjusting layer, the density of the material in the first admittance adjusting layer, and the like.

In addition, the refractive index of light having a wavelength of 570 nm of the material (dielectric material or oxide semiconductor material) included in the first admittance adjusting layer is preferably larger than 1.5, more preferably 1.6 to 2.5. More preferably, it is 1.7 to 2.5, and particularly preferably 1.8 to 2.5. Further, the refractive index difference between the material constituting the first admittance adjusting layer and the transparent support is preferably 0.1 to 1.1, more preferably 0.4 to 1.0.

The material (dielectric material or oxide semiconductor material) constituting the first admittance adjusting layer is preferably a metal oxide or a metal sulfide. Examples of metal oxides or metal sulfides include TiO ₂ , ITO (indium tin oxide), ZnO, ZnS, Nb ₂ O ₅ , ZrO ₂ , CeO ₂ , Ta ₂ O ₅ , Ti ₃ O ₅ , Ti ₄ O. ₇ , Ti ₂ O ₃ , TiO, SnO ₂ , La ₂ Ti ₂ O ₇ , IZO (indium zinc oxide), AZO (Al-doped ZnO), GZO (Ga-doped ZnO), ATO (Sb-doped SnO), ICO ( Indium cerium oxide) is included, and from the viewpoint of refractive index and productivity, TiO ₂ , ITO, ZnO, Nb ₂ O ₅ or ZnS is preferable. The first admittance adjusting layer may contain only one kind of the metal oxide or metal sulfide or two or more kinds.

The thickness of the first admittance adjusting layer is preferably 10 to 150 nm, more preferably 20 to 80 nm. When the thickness of the first admittance adjusting layer is 10 nm or more, the optical admittance of the transparent conductor is easily adjusted sufficiently by the first admittance adjusting layer. As a result, the light transmittance of the transparent conductor is sufficiently increased. On the other hand, when the thickness of the first admittance adjusting layer is 150 nm or less, the light permeability of the transparent conductor is hardly lowered by the first admittance adjusting layer. The thickness of the first admittance adjusting layer is measured with an ellipsometer.

The first admittance adjusting layer may be a layer formed by a general vapor deposition method such as a vacuum deposition method, a sputtering method, an ion plating method, a plasma CVD method, a thermal CVD method or the like. From the viewpoint of increasing the refractive index (density) of the first admittance adjusting layer, it is preferably a layer formed by electron beam evaporation or sputtering. In the case of the electron beam evaporation method, it is desirable to have assistance such as IAD (ion assist) in order to increase the film density.

(1-3) Transparent metal film The metal contained in the transparent metal film is not particularly limited, and may be, for example, silver, copper, gold, platinum group, titanium, chromium, or the like. The transparent metal film may contain only one kind of these metals or two or more kinds. From the viewpoint of low plasmon absorption and low reflectance, the transparent metal film is preferably a film made of silver or an alloy containing 50 mass% or more of silver. In particular, the transparent metal film is preferably made of silver or an alloy containing 90 at% or more of silver. When the transparent metal film is a layer made of a silver alloy, the metal combined with silver can be zinc, gold, copper, palladium, aluminum, manganese, bismuth, neodymium, or the like. For example, when silver is combined with zinc, the sulfide resistance of the transparent metal film is increased. Combining silver with gold increases salt resistance (NaCl) resistance. In addition, when silver is combined with copper, oxidation resistance is enhanced.

The plasmon absorptance of the transparent metal film is preferably 15% or less, more preferably 10% or less, even more preferably 7% or less, and particularly preferably 5 in the entire wavelength range of 400 nm to 800 nm. % Or less. When the plasmon absorption rate in the above wavelength range is small, the visible light transmittance of the transparent conductor is increased. Further, when the plasmon absorptance is below a certain value over a part of the wavelength of 400 nm to 800 nm, the transmitted light of the transparent conductor is hardly colored.

The plasmon absorption rate at a wavelength of 400 nm to 800 nm of the transparent metal film is obtained in advance by preparing a metal film having no plasmon absorption and using the absorption rate of this metal film as reference data. Specifically, it is measured by the following procedure.

(I) A platinum palladium film is formed to a thickness of 0.1 nm on a glass substrate using a magnetron sputtering apparatus. The average thickness of platinum palladium is calculated from the film forming speed and the like of the manufacturer's nominal value of the sputtering apparatus. Thereafter, a metal film is formed to a thickness of 20 nm by a vapor deposition machine on the substrate to which platinum palladium is adhered.

(Ii) Then, measurement light is incident from an angle inclined by 5 ° with respect to the front surface of the obtained metal film, and the transmittance and reflectance of the metal film are measured. Then, from the transmittance and reflectance at each wavelength, absorption rate = 100− (transmittance + reflectance) is calculated and used as reference data. The transmittance and reflectance are measured with a spectrophotometer.

(Iii) Subsequently, a transparent metal film to be measured is formed on the same glass substrate. Then, the transmittance and reflectance of the transparent metal film are measured. Then, the reference data is subtracted from the obtained absorption rate, and the calculated value is defined as the plasmon absorption rate.

The thickness of the transparent metal film contained in the transparent conductor is 15 nm or less, more preferably 3 to 13 nm, and further preferably 7 to 12 nm. When the thickness of the transparent metal film is 15 nm or less, the original reflection of the metal constituting the transparent metal film hardly occurs. Furthermore, when the thickness of the transparent metal film is 15 nm or less, the light permeability of the transparent conductor is easily increased by the first admittance adjusting layer and the second admittance adjusting layer, as will be described later. The thickness of the transparent metal film is measured with an ellipsometer.

The transparent metal film may be a film formed by any method. However, in a general vapor deposition method, it is difficult to obtain a transparent metal film having a plasmon absorption rate of 15% or less and a thickness of 15 nm or less over the entire wavelength range of 400 nm to 800 nm. Therefore, the transparent metal film is preferably a film formed after previously forming growth nuclei. A method for forming the transparent metal film will be described later.

(1-4) Second Admittance Adjustment Layer The second admittance adjustment layer is a layer containing a dielectric material or an oxide semiconductor material, and may be a layer disposed adjacent to the transparent metal film. The material constituting the second admittance adjustment layer can be the same as the material constituting the first admittance adjustment layer. The first admittance adjusting layer and the second admittance adjusting layer may be layers made of the same material or layers made of different materials.

The refractive index of light having a wavelength of 510 nm of the second admittance adjusting layer is preferably larger than 1.5, more preferably 1.6 to 2.5, and still more preferably 1.8 to 2.5. As will be described later, when the refractive index of the second admittance adjusting layer is higher than 1.5, reflection on the surface of the transparent conductor is easily suppressed. The refractive index of the second admittance adjusting layer is also preferably larger than the refractive index of the transparent support, and the refractive index difference is preferably 0.1 to 1.1, more preferably 0.4 to 1.0. The refractive index of the second admittance adjusting layer is measured with an ellipsometer. The refractive index of the second admittance adjusting layer is adjusted by the material constituting the second admittance adjusting layer, the density of the material in the second admittance adjusting layer, and the like.

The refractive index of light having a wavelength of 570 nm of the material (dielectric material or oxide semiconductor material) included in the second admittance adjusting layer is preferably greater than 1.5, more preferably 1.6 to 2.5. More preferably, it is 1.8 to 2.5. As will be described later, when the refractive index of the material constituting the second admittance adjusting layer is greater than 1.5, the light transmittance of the transparent conductor tends to increase. The difference in refractive index between the material constituting the second admittance adjusting layer and the transparent support is preferably from 0.1 to 1.1, more preferably from 0.4 to 1.0.

The thickness of the second admittance adjusting layer is preferably 10 to 150 nm, more preferably 20 to 80 nm. When the thickness of the second admittance adjusting layer is 10 nm to 150 nm, the light transmittance of the transparent conductor is sufficiently increased. The thickness of the second admittance adjusting layer is measured with an ellipsometer.

(1-5) Third Admittance Adjustment Layer In the transparent conductor of this aspect, a third admittance adjustment layer may be further laminated on the second admittance adjustment layer. The third admittance adjusting layer plays a role of adjusting the optical admittance of the transparent conductor or protecting the transparent conductor.

The refractive index of light having a wavelength of 510 nm of the third admittance adjusting layer is preferably 1.3 to 1.8, more preferably 1.35 to 1.6, and still more preferably 1.35 to 1.5. It is. When the refractive index of the third admittance adjusting layer is 1.3 to 1.8, the optical admittance of the transparent conductor is easily finely adjusted. The refractive index of the third admittance adjusting layer is measured with an ellipsometer. The refractive index of the third admittance adjusting layer is adjusted by the material constituting the third admittance adjusting layer, the density of the material in the third admittance adjusting layer, and the like.

Here, the third admittance adjusting layer preferably includes a material having a refractive index lower than the refractive index of light having a wavelength of 570 nm of the dielectric material or the oxide semiconductor material included in the second admittance adjusting layer. . The refractive index of light having a wavelength of 570 nm of the material constituting the third admittance adjusting layer is appropriately selected according to the refractive index of the material included in the second admittance adjusting layer, and is 1.3 to 1.8. Is more preferably 1.35 to 1.6, and still more preferably 1.35 to 1.5. When the refractive index of the material constituting the third admittance adjusting layer is 1.35 to 1.5, the optical admittance of the transparent conductor is easily finely adjusted. The refractive index of the third admittance adjusting layer is adjusted by the material constituting the third admittance adjusting layer and its density.

The material constituting the third admittance adjusting layer is not particularly limited as long as it is a dielectric material or an oxide semiconductor material, and examples thereof include SiO ₂ , Al ₂ O ₃ , MgF ₂ , Y ₂ O _{3 and the} like. . From the viewpoint of finely adjusting the refractive index, the dielectric material is preferably SiO ₂ or MgF ₂ .

The thickness of the third admittance adjusting layer is preferably 10 to 150 nm, more preferably 20 to 100 nm. When the thickness of the third admittance adjusting layer is 10 nm or more, it is easy to finely adjust the optical admittance on the surface of the transparent conductor. On the other hand, if the thickness of the third admittance adjusting layer is 150 nm or less, the thickness of the transparent conductor is reduced. The thickness of the third admittance adjusting layer is measured with an ellipsometer.

(1-6) Other Layers The transparent conductor of the first aspect includes other than the transparent support material, the first admittance adjusting layer, the transparent metal film, the second admittance adjusting layer, and the third admittance adjusting layer described above. Of layers may be included. The other layer may be any layer as long as it does not affect the light transmittance of the transparent conductor; for example, between the first admittance adjusting layer and the transparent metal film, or the second admittance adjusting layer. And a transparent metal film. The thickness of the other layers is preferably 15 nm or less, more preferably 10 nm or less.

(1-7) Physical Properties of Transparent Conductor The transparent conductor according to the first embodiment has an average absorptance of light having a wavelength of 400 nm to 800 nm of 15% or less, preferably 12% or less, more preferably 10% or less. is there. Further, the maximum value of the absorptance of light having a wavelength of 400 nm to 800 nm is 25% or less, preferably 20% or less, and more preferably 15% or less. The light absorption rate of the transparent conductor can be reduced by suppressing the plasmon absorption rate of the transparent metal film and the light absorption rate of the material constituting each layer.

The average transmittance of light having a wavelength of 450 nm to 800 nm of the transparent conductor is preferably 50% or more, more preferably 70% or more, and further preferably 80% or more. On the other hand, the average reflectance of light having a wavelength of 500 nm to 700 nm of the transparent conductor is preferably 20% or less, more preferably 15% or less, and further preferably 10% or less. If the average transmittance of light having the above wavelength is 50% or more and the average reflectance is 20% or less, the transparent conductor can also be applied to uses where high transparency is required. The average transmittance and the average reflectance are values measured by allowing measurement light to enter the transparent conductor from an angle inclined by 5 ° with respect to the front surface of the transparent conductor. The average transmittance and the average reflectance are measured with a spectrophotometer, and the average absorptance is calculated from 100− (average transmittance + average reflectance).

The a * value and b * value in the L * a * b * color system of the transparent conductor are preferably within ± 30, more preferably within ± 5, and even more preferably within ± 3.0. Particularly preferably, it is within ± 2.0. If the a * value and b * value in the L * a * b * color system are within ± 30, the transparent conductor is observed as colorless and transparent. The a * value and b * value in the L * a * b * color system are measured with a spectrophotometer.

The surface electrical resistance of the transparent conductor is preferably 50Ω / □ or less, more preferably 30Ω / □ or less. A transparent conductor having a surface electric resistance value of 50Ω / □ or less can be applied to a transparent conductive panel for a capacitive touch panel. The surface electrical resistance value of the transparent conductor is adjusted by the thickness of the transparent metal film and the like. The surface electrical resistance value of the transparent conductor can be measured in accordance with, for example, JIS K7194, ASTM D257, and the like. It can also be measured by a commercially available surface electrical resistivity meter.

The difference between the haze value H _sub haze values and transparency support transparent conductor (haze degradation) is preferably less than 0.9, more preferably 0.5 or less. The difference between the haze value H _sub haze value of the transparent conductor and the transparent support material, the first admittance adjusting layer and a transparent metal film, by lamination of the second admittance adjusting layer, how much haze value is increased; that each layer It is an index indicating how much transparency is impaired by the lamination. The haze value of the transparent conductor is measured with a haze meter.

(2) Regarding the transparent conductor of the second embodiment The structure of the transparent conductor of the second embodiment is shown in FIG. As shown in FIG. 2, the transparent conductor 200 of the second embodiment includes a transparent support material 11 / underlayer 15 / first admittance adjustment layer 12 / transparent metal film 13 / second admittance adjustment layer 14. A third admittance adjustment layer (not shown) may be further laminated on the second admittance adjustment layer 14.

In the transparent conductor 200 of the second aspect, the optical admittance of the transparent conductor 200 is adjusted by the two

admittance adjusting layers

12 and 14 and the underlayer 15 as described later. As a result, light reflection on the surface of the transparent conductor 200 is suppressed, and the light transmittance of the transparent conductor 200 is increased.

The transparent conductor of the second aspect may include two or more transparent metal films; and another admittance adjusting layer may be sandwiched between the two transparent metal films. The other admittance adjustment layer may be the same layer as the first admittance adjustment layer and the second admittance adjustment layer.

The transparent support material, the first admittance adjustment layer, the transparent metal film, the second admittance adjustment layer, and the third admittance adjustment layer included in the transparent conductor of the second aspect are the transparent support material included in the first aspect, the first Each of the one admittance adjusting layer, the transparent metal film, the second admittance adjusting layer, and the third admittance adjusting layer may be the same.

(2-1) Underlayer The underlayer is a layer formed between the transparent support material and the first admittance adjusting layer. The underlayer includes one or more layers containing a dielectric material or an oxide semiconductor material (hereinafter also referred to as “low refractive index layer”) having a refractive index lower than the refractive index of light having a wavelength of 570 nm of the transparent support material. In the transparent conductor of the second aspect, since the low refractive index layer is included in the base layer, reflection of light from the transparent metal film is suppressed as described later. The refractive index of light having a wavelength of 570 nm of the dielectric material or oxide semiconductor material contained in the low refractive index layer is appropriately selected according to the refractive index of the transparent support material, but is preferably 1.8 or less, More preferably, it is 1.30 to 1.6, and still more preferably 1.35 to 1.5.

The underlayer may be a single layer composed of only one layer (low refractive index layer) or a laminate of 2 to 10 layers or more. From the viewpoint of the cost and production efficiency of the transparent conductor, the underlayer is preferably a single layer body.

The material constituting the low refractive index layer is appropriately selected according to the refractive index of the transparent support material. For example, magnesium fluoride (MgF ₂ ), SiO ₂ , AlF ₃ , CaF ₂ , CeF ₃ , CdF ₃ , LaF ₃ , LiF, NaF, NdF ₃ , YF ₃ , YbF ₃ , Ga ₂ O ₃ , LaAlO _3, etc. It is possible. Among these, magnesium fluoride (MgF ₂ ) is preferable from the viewpoint that the refractive index is low. Only one of these materials may be included in the low refractive index layer, or two or more of these materials may be included.

The thickness of the low refractive index layer is appropriately set based on optical admittance described later, but is preferably 10 to 500 nm, and more preferably 30 to 250 nm. When the thickness of the low refractive index layer is 10 nm or more, the reflection suppressing effect of the transparent metal film can be sufficiently obtained.

The underlayer may include other layers including a material having a higher refractive index than the low refractive index layer. The material constituting the other layers included in the base layer is not particularly limited, for example _{_{_{_{TiO 2, ITO, ZnO, ZnS}}}} , Nb 2 O 5, ZrO 2, CeO 2, Ta 2 O 5, Ti 3 O 5, Ti ₄ O ₇ , Ti ₂ O ₃ , TiO, SnO ₂ , La ₂ Ti ₂ O _{7 and the} like. The other layer may contain only one kind of these materials or two or more kinds. When the underlayer includes other layers, the optical admittance of the underlayer described later is adjusted.

The thickness of other layers contained in the underlayer is appropriately set based on optical admittance described later, but is preferably 10 to 150 nm, more preferably 20 to 80 nm. When the thickness of the other layer is 10 nm or more, the effect of adjusting the optical admittance is easily obtained.

The total thickness of the underlayer is preferably 10 to 1000 nm, more preferably 10 to 500 nm, and still more preferably 30 to 350 nm from the viewpoint of the flexibility and spectral characteristics of the transparent conductor.

The low refractive index layer and other layers included in the underlayer are usually formed by a general vapor deposition method such as a vacuum deposition method, a sputtering method, an ion plating method, a plasma CVD method, or a thermal CVD method. It can be a layer. From the viewpoint of easiness of film formation, the low refractive index layer and other layers are preferably layers formed by electron beam evaporation or sputtering.

(2-2) Other layers The transparent conductor of the second embodiment includes the above-mentioned transparent support material, underlayer, first admittance adjusting layer, transparent metal film, second admittance adjusting layer, and third admittance adjusting layer. In addition, other layers may be included. The other layer may be any layer as long as it does not affect the light transmittance of the transparent conductor; for example, between the first admittance adjusting layer and the transparent metal film, or the second admittance adjusting layer. And a transparent metal film. The thickness of the other layers is preferably 15 nm or less, more preferably 10 nm or less.

(2-3) Physical properties of transparent conductor The transparent conductor of the second embodiment has an average absorptance of light having a wavelength of 400 nm to 800 nm of 10% or less, preferably 8% or less, more preferably 7%. It is as follows. Further, the maximum value of the absorptance of light having a wavelength of 450 nm to 800 nm is 15% or less, preferably 10% or less, and more preferably 9% or less. The average light absorption rate of the transparent conductor can be reduced by suppressing the plasmon absorption rate of the transparent metal film and the light absorption rate of the material constituting each layer.

The surface electrical resistance of the transparent conductor is preferably 50Ω / □ or less, more preferably 30Ω / □ or less. A transparent conductor having a surface electric resistance value of 50Ω / □ or less can be applied to a transparent conductive panel for a capacitive touch panel. The surface electrical resistance value of the transparent conductor can be adjusted by the thickness of the transparent metal film or the like. The surface electrical resistance value of the transparent conductor can be measured in accordance with, for example, JIS K7194, ASTM D257, and the like. It can also be measured by a commercially available surface electrical resistivity meter.

The difference between the haze value H _sub haze values and transparency support transparent conductor (haze degradation) is preferably less than 0.9, more preferably 0.5 or less. The haze value of the transparent conductor is measured with a haze meter.

(3) About the transparent conductor of a 3rd aspect The structure of the transparent conductor of a 3rd aspect is shown in FIG. As shown in FIG. 3, the transparent conductor 300 of the third embodiment includes a transparent support material 21 / first admittance adjustment layer 22 / low refractive index layer 26 / transparent metal film 23 / low refractive index layer 27 / second. An admittance adjustment layer 24 is included. In the transparent conductor 300 of FIG. 3, the low refractive index layers 26 and 27 are laminated on both sides of the transparent metal film 23, but the low refractive index layer is adjacent to only one surface of the transparent metal film 23. May be laminated. A third admittance adjustment layer (not shown) may be further laminated on the second admittance adjustment layer 24.

As described above, when the thickness of the transparent metal film is thick, the reflection of the metal constituting the transparent metal film occurs, and the light transmittance of the transparent conductor is lowered. On the other hand, if the thickness of the transparent metal film is reduced in order to suppress reflection of the transparent metal film, the surface roughness of the film tends to be rough. As a result, plasmon absorption occurs, and the light transmittance of the transparent conductor is lowered.

Here, assuming that the thin transparent metal film is composed of metal microspheres, the local plasmon absorption cross section is expressed by the following equation.

Based on the above relational expression, the lower the refractive index of the medium in contact with the transparent metal film, the lower the plasmon absorption. In the transparent conductor of the third aspect, a low refractive index layer having a relatively low refractive index is laminated adjacent to the transparent metal film. Therefore, plasmon absorption of the transparent metal film is suppressed, and the light transmittance of the transparent conductor is increased.

Here, the transparent conductor of the third aspect may include two or more transparent metal films; and further, another admittance adjusting layer may be sandwiched between the two transparent metal films. Good. The other admittance adjustment layer may be the same layer as the first admittance adjustment layer and the second admittance adjustment layer.

The transparent support material, the first admittance adjustment layer, the transparent metal film, the second admittance adjustment layer, and the third admittance adjustment layer included in the transparent conductor of the third aspect are the transparent support material and the first admittance of the first aspect. The adjustment layer, the transparent metal film, the second admittance adjustment layer, and the third admittance adjustment layer may be the same.

(3-1) Low Refractive Index Layer The low refractive index layer is a layer adjacent to the transparent metal film and suppresses plasmon absorption of the transparent metal film as described above.

The low refractive index layer includes a material having a refractive index lower than the refractive index of light having a wavelength of 570 nm of the dielectric material or the oxide semiconductor material contained in the first admittance layer and the second admittance layer. Specifically, the refractive index of the material included in the low refractive index layer is 0.2 or more lower than the refractive index of the dielectric material or oxide semiconductor material included in the first admittance layer and the second admittance layer, respectively. Is preferable, and 0.4 or more is more preferable.

Further, the refractive index of the material constituting the low refractive index layer is preferably 1.8 or less, more preferably 1.30 to 1.6, particularly preferably in view of the plasmon suppressing effect described above. 1.35 to 1.5. The refractive index of the low refractive index layer is usually adjusted by the refractive index of the material constituting the low refractive index layer and the density of the material constituting the low refractive index layer.

The material constituting the low refractive index layer is appropriately selected according to the desired refractive index. For example, magnesium fluoride (MgF ₂ ), SiO ₂ , AlF ₃ , CaF ₂ , CeF ₃ , CdF ₃ , LaF ₃ , LiF , NaF, NdF ₃ , Y ₂ O ₃ , YF ₃ , YbF ₃ , Ga ₂ O ₃ , LaAlO ₃ , Na ₃ AlF ₆ , Al ₂ O ₃ , PbF ₂ , MgO, and ThO ₂ . The materials constituting the low refractive index layer are MgF ₂ , SiO ₂ , Y ₂ O ₃ , LaAlO ₃ , CaF ₂ , NaF, Na ₃ AlF ₆ , LiF, LaF ₃ , NdF ₃ , Al ₂ O ₃ , CeF ₃ , among others. , PbF ₂ , MgO, and ThO ₂ are preferable, and MgF ₂ and SiO ₂ are particularly preferable from the viewpoint that the refractive index is low. Only one of these materials may be included in the low refractive index layer, or two or more of these materials may be included.

The thickness of the low refractive index layer is preferably a thickness that does not hinder the effect of adjusting the optical admittance by the first admittance adjusting layer and the second admittance adjusting layer described later. The thickness of the low refractive index layer is 0.1 to 15 nm, preferably 1 to 10 nm, and more preferably 3 to 8 nm.

The low refractive index layer can be a layer formed by a general vapor deposition method such as a vacuum deposition method, a sputtering method, an ion plating method, a plasma CVD method, or a thermal CVD method. From the viewpoint of easiness of film formation, the low refractive index layer and other layers are preferably layers formed by electron beam evaporation or sputtering.

(3-2) Other layers The transparent conductor of the third aspect includes the above-mentioned transparent support material, first admittance adjusting layer, low refractive index layer, transparent metal film, second admittance adjusting layer, and third admittance. Other layers may be included in addition to the adjustment layer. The other layers may be any layers as long as they do not affect the light transmittance of the transparent conductor. The thickness of the other layers is preferably 15 nm or less, more preferably 10 nm or less.

(3-3) Physical properties of transparent conductor The transparent conductor of the third aspect preferably has an average absorptance of light having a wavelength of 400 nm to 800 nm of 9% or less, more preferably 8% or less, Preferably it is 7% or less. Further, the maximum value of the absorptance of light having a wavelength of 450 nm to 800 nm is preferably 15% or less, more preferably 10% or less, and further preferably 9% or less. The light absorption rate of the transparent conductor can be reduced by suppressing the plasmon absorption rate of the transparent metal film and the light absorption rate of the material constituting each layer.

The average transmittance of light having a wavelength of 450 nm to 800 nm of the transparent conductor is preferably 50% or more, more preferably 70% or more, and further preferably 80% or more. On the other hand, the average reflectance of light having a wavelength of 500 nm to 700 nm of the transparent conductor is preferably 20% or less, more preferably 15% or less, and further preferably 10% or less. If the average transmittance of light having the above wavelength is 50% or more and the average reflectance is 20% or less, the transparent conductor can also be applied to uses where high transparency is required. The average transmittance and the average reflectance are measured by allowing measurement light to enter the transparent conductor from an angle inclined by 5 ° with respect to the front surface of the transparent conductor. The average transmittance and the average reflectance are measured with a spectrophotometer, and the average absorptance is calculated from 100− (average transmittance + average reflectance).

The difference between the haze value H _sub haze values and transparency support transparent conductor (haze degradation) is preferably less than 0.9, more preferably 0.5 or less, more preferably 0.3 It is as follows. The haze value of the transparent conductor is measured with a haze meter.

2. Optical Admittance of Transparent Conductor As described above, in order to increase the conductivity of the transparent metal film included in the transparent conductor, it is necessary to thicken the transparent metal film to some extent. However, as the thickness of the transparent metal film increases, the reflectance of the transparent metal film increases and the light transmittance of the transparent conductor decreases. On the other hand, in the transparent conductors of the first to third aspects described above, the transparent metal film is sandwiched between the admittance adjusting layers or the underlayer is laminated. The reflectivity is adjusted low.

Here, the reflectance R of the surface of the transparent conductor (the surface opposite to the transparent support material in the transparent conductor) is determined by the optical admittance y _{env of the} medium on which light is incident and the equivalent admittance Y _E of the surface of the transparent conductor. Determined from The medium on which light is incident refers to a member or environment that contacts the surface of the transparent conductor. The relationship between the optical admittance y _{env of the} medium and the equivalent admittance Y _E of the surface of the transparent conductor is expressed by the following equation.

Based on the above formula, the closer the value | y _env −Y _E | is to 0, the lower the reflectance R of the surface of the transparent conductor.

The optical admittance y _env of the medium is obtained from the ratio (H / E) of the electric field strength and the magnetic field strength, and is the same as the refractive index n _{env of the} medium. On the other hand, the equivalent admittance Y _E is determined from the optical admittance Y of the layers constituting the transparent conductor. For example, when the transparent conductor composed of one is equivalent admittance Y _E of the transparent conductor is equal to the of the layer optical admittance Y (refractive index).

On the other hand, when the transparent conductor is a laminate, the optical admittance Y _x (E _x H _x ) of the laminate from the first layer to the x layer is the laminate from the first layer to the (x−1) layer. It is represented by the product of the optical admittance Y _x-1 (E _x-1 H _x-1 ) of the body and a specific matrix; specifically, it is obtained by the following formula (1) or formula (2).

When the x-th layer is a layer made of a dielectric material or an oxide semiconductor material

・ When the xth layer is an ideal metal layer

When the x-th layer is the outermost layer, the optical admittance Yx (E _x H _x ) of the laminate from the transparent support material to the outermost layer becomes the equivalent admittance Y _E of the transparent conductor. Hereinafter, the optical admittance of the nuclear transparent conductor according to the first to third aspects will be described.

(1) Optical Admittance of Transparent Conductor of First Aspect FIG. 4A shows the transparent conductor (transparent support material (glass substrate) / first admittance adjusting layer (TiO ₂ ) / transparent metal film (Ag) of the first aspect. ) / Second admittance adjustment layer (TiO ₂ ) / transparent conductor with third admittance adjustment layer (SiO ₂ )). The horizontal axis of the graph is the real part when the optical admittance Y is represented by x + iy; that is, x in the formula, and the horizontal axis is the imaginary part of the optical admittance; that is, y in the formula.

In Figure 4A, the final coordinates of the admittance locus is equivalent admittance Y _E. Assuming that the medium on which the light is incident is air, the distance between the coordinates (x _E , y _E ) of the equivalent admittance Y _E and the admittance coordinates (1, 0) of the air is the reflectance R of the transparent conductor surface. Is proportional to That is, the closer the distance between the coordinates (x _E , y _E ) of the equivalent admittance Y _E and the coordinates (1, 0) of the air admittance y _env is, the smaller the reflectance R of the transparent conductor is.

Further, based on the relational expression between the reflectance R, the equivalent admittance Y _E, and the optical admittance y _{env of the} medium on which light is incident, the coordinates (x _E , y _E ) of the equivalent admittance Y _E are the admittance of the medium (air). If it is on the right side of the coordinates (1, 0), the reflectance R tends to be small. Thus, the transparent conductor of the first aspect, is preferably x-coordinate x _E of the equivalent admittance Y _E is 0.8 or more, further preferably 1.0 or more.

In the transparent conductor of the first aspect, the optical admittance at the wavelength of 570 nm at the interface between the transparent metal film and the first admittance adjustment layer is Y1 (= x ₁ + ii ₁ ), and the transparent metal film and the second admittance adjustment layer When the optical admittance at the wavelength of 570 nm of the side interface is Y2 (= x ₂ + iy ₂ ), either one of x ₁ and x ₂ or both are adjusted to be 1.6 or more. That is, the horizontal axis coordinate of Y1 (x ₁ , y ₁ ) or Y2 (x ₂ , y ₂ ) in the admittance locus in FIG. 4A is 1.6 or more. When the transparent conductor includes a plurality of transparent metal films, the optical admittance at the interface on the first admittance adjustment layer side of the transparent metal film on the most transparent support material side is Y1 = x ₁ + iy ₁ , and the most air The optical admittance at the interface on the second admittance adjustment layer side of the transparent metal film on the side is Y2 = x ₂ + iy ₂ . either one of x ₁ and x _2, or when both are 1.6 or higher, is likely to increase the light transmission of the transparent conductor. The reason is as follows.

The transparent metal film generally has a large value of the imaginary part of the optical admittance, and when a transparent metal is laminated, the admittance locus greatly moves in the vertical axis (imaginary part) direction. FIG. 5A shows an admittance locus of a transparent conductor having a transparent support material / transparent metal film / admittance adjusting layer in this order, and FIG. 5B shows a wavelength of 450 nm and a wavelength of 570 nm of the transparent conductor. And an admittance locus at a wavelength of 700 nm. As shown in FIG. 5A, when a transparent metal film is laminated directly on a transparent support material, the vertical axis (imaginary part) from the start point of the admittance locus (the admittance coordinates (about 1.5, 0) of the transparent support material). ) The admittance locus moves greatly in the direction, and the absolute value of the imaginary part of the admittance coordinates becomes very large. When the absolute value of the imaginary part of the admittance coordinates increases, be laminated admittance adjusting layer on a transparent metal film, it is bringing the equivalent admittance Y _E 1 becomes difficult.

Also Even if the formation of the admittance adjustment layer between the transparent support and the transparent metal film, the coordinates x ₁ of the real part of the above Y1 is not a 1.6; as shown in other words FIGS. 5 (a) When the admittance locus of the first admittance adjustment layer hardly moves from the starting point (the admittance coordinates (about 1.5, 0) of the transparent support material), the admittance locus becomes line symmetric about the horizontal axis of the graph. hard. If the admittance locus at a specific wavelength (570 nm in the present invention) is not line symmetric about the horizontal axis of the graph, as shown in FIG. 5B, the admittance at other wavelengths (for example, 450 nm and 700 nm). trajectory tends shake, the coordinates of the equivalent admittance Y _E is less likely to be constant. Therefore, a wavelength region where the antireflection effect is not sufficient is likely to occur.

On the other hand, in the transparent conductor of the first aspect (transparent support / first admittance adjusting layer / transparent metal film / transparent conductor including the second admittance adjusting layer in this order), as shown in FIG. , since the first admittance adjusting layer is laminated between the transparent support and the transparent metal film, the coordinates x ₁ of the real part of the Y1 becomes 1.6 or more. At the same time, the coordinates of the imaginary part of the admittance locus are largely moved in the positive direction by the first admittance adjustment layer. That is, even if the admittance trajectory moves greatly in the negative direction of the imaginary part due to the transparent metal film, the absolute value (y ₂ ) of the imaginary part of Y2 is difficult to increase. Furthermore, the admittance trajectory tends to be line symmetric about the horizontal axis of the graph. Therefore, as shown in FIG. 6B, not only the case of the wavelength of 570 nm, but also the admittance locus of the wavelength of 400 nm and 700 nm is axisymmetric about the horizontal axis of the graph, and the equivalent admittance Y _E of each wavelength is The coordinates are almost the same. That is, at any wavelength, the value of the equivalent admittance Y _E tends closer to 1, at any wavelength, sufficient antireflection effect is obtained.

Further, the following relational expression holds between the admittance Y at the interface of each layer and the electric field strength E existing in each layer.

Based on the above relational expression, the larger the admittance Y, the smaller the electric field strength E, and the electric field loss (light absorption) is suppressed. FIG. 4B is a graph showing the relationship between the optical length and the electric field of the transparent conductor having the admittance locus shown in FIG. As shown in FIG. 4 (b), when the coordinates x ₁ of the real part of Y1 is adjusted to be 1.6 or more, as shown for example in FIG. 4 (b), the admittance of the transparent metal film Y increases. As a result, the transparent metal film hardly absorbs light, and the light transmittance of the transparent conductor is increased.

On the other hand, even when adjusting the coordinates x ₂ of the real part of Y2 to 1.6 or more, transparency admittance locus conductor tends to become line symmetry about the horizontal axis of the graph; field of transparent metal film is reduced Therefore, light absorption by the transparent metal film is suppressed.

In the present invention, at least _one of the x ₁ and / or x ₂ is preferably 1.6 or more and 7.0 or less, more preferably 1.8 or more and 5.5 or less, and still more preferably 2.0. It is 3.0 or less. Of x ₁ and x ₂ , x ₁ is particularly preferably 1.6 or more. x ₁ is the refractive index of the first admittance adjusting layer and is adjusted by the thickness or the like of the first admittance adjusting layer. x ₂ is preferably 1.3 to 5.5, and more preferably 1.5 to 3.5 or less. x ₂ is the refractive index and the transparent metal film is adjusted by the thickness or the like of the transparent metal film.

Here, the absolute value (| x ₁ −x ₂ |) of the difference between x ₁ and x ₂ is preferably 1.5 or less, more preferably 1.0 or less, and even more preferably 0.8 or less. It is. In particular, it is preferable that m | x ₁ −x ₂ | / x _cross is smaller than 0.5 when the coordinate Ycross (x _cross , 0) of the intersection point between the admittance locus of the transparent metal film and the horizontal axis is used. Preferably it is 0.3 or less, More preferably, it is 0.2 or less.

Further, since the line symmetry admittance locus around the horizontal axis of the graph, the coordinate y ₁ of the imaginary part of the Y1, the coordinate y ₂ of the imaginary part of the Y2, to meet y ₁ × y ₂ ≦ 0 preferable.

Here, if the third admittance adjusting layer is formed on the second admittance adjusting layer, it is finely adjusted more equivalent admittance Y _E. FIG. 7 includes a transparent support material (glass substrate) / first admittance adjustment layer (TiO ₂ ) / transparent metal film (Ag) / second admittance adjustment layer (TiO ₂ ) / third admittance adjustment layer (SiO ₂ ). The admittance locus | trajectory of wavelength 450nm, wavelength 570nm, and wavelength 700nm of a transparent conductor is shown. As shown in Figure 7, when the third admittance adjusting layer is formed, the value of the equivalent admittance Y _E is finely adjusted, approaching the air admittance coordinates (1,0). In such a transparent conductor, at any wavelength, the value of the equivalent admittance Y _E is close to admittance coordinates of air, at any wavelength, sufficient antireflection effect is obtained.

In the transparent conductor according to the first aspect, the distance (| x _E −1 | + | y _E −) between the coordinates (x _E , y _E ) of the equivalent admittance Y _E and the admittance coordinates Y _env (1, 0) of air. 0 |) is preferably 0.9 or less, more preferably 0.6 or less, and still more preferably 0.3 or less.

(2) Optical Admittance of Transparent Conductor of Second Aspect FIG. 8 shows the transparent conductor (transparent support material (glass substrate) / underlayer (MgF ₂ ) / first admittance adjustment layer (TiO ₂ ) of the _{second aspect.} ) / Transparent metal film (Ag) / transparent conductor with the second admittance adjusting layer (TiO ₂ )). The horizontal axis of the graph is the real part when the optical admittance Y is represented by x + iy; that is, x in the equation, and the vertical axis is the imaginary part of the optical admittance; that is, y in the equation.

As described above, the distance between the coordinates (x _E , y _E ) of the equivalent admittance Y _E and the admittance coordinates (n _env , 0) of the medium on which light is incident is proportional to the reflectance R of the transparent conductor surface. . In this embodiment, the distance (((x _E −n _env ) ² + (y _E ) between the coordinates (x _E , y _E ) of the equivalent admittance Y _E and the admittance coordinates (n _env , 0) of the medium on which light is incident. ² ) ^0.5 ) is preferably less than 0.5, more preferably 0.3 or less. If the distance is less than 0.5, the reflectance R of the transparent conductor surface is sufficiently small, and the light transmittance of the transparent conductor is likely to increase.

Here, in the transparent conductor according to the second aspect, when the optical admittance at a wavelength of 570 nm on the surface of the underlayer on the first admittance adjustment layer side is represented by Y0 (= x ₀ + iy ₀ ), the value of x ₀ is The transparent support material has a value smaller than the refractive index n _sub of light having a wavelength of 570 nm. That is, the coordinate (x ₀ , y ₀ ) on the surface of the underlayer on the first admittance adjustment layer side is on the left side of the optical admittance coordinate (n _sub , 0) on the surface of the transparent support material. The value of x ₀ is preferably from 0.01 or more smaller _{n sub} Specifically, more preferably less than 0.05. Further, x ₀ is preferably 0.5 to 1.70, more preferably 1.0 to 1.45. x ₀ is adjusted by the refractive index and thickness of the layers contained in the base layer. For example, if the refractive index of the low refractive index layer is lower contained in the base layer, it is x ₀ likely reduced.

The reason why the transparency of the transparent conductor is increased when such an underlayer is provided will be described below. In general, the optical admittance of each member changes as the film thickness increases, and draws an arc-shaped admittance locus. At this time, expressed as the minimum value x _a of the real part of the optical admittance, to represent the maximum value of the real part of the optical admittance at x _b; product of x _a and _{_{_{x b (x a × x b}}} ) is the member Is equal to the square of the refractive index n. Accordingly, among the x _a and x _b, if one value is the smaller, the other value is increased, the arc of the admittance locus increases.

Here, when the first admittance adjusting layer is provided directly on the transparent support material, the minimum value x _a of the real part of the optical admittance of the first admittance adjusting layer is n _sub .

In contrast, when having a base layer between the transparent support and the first admittance adjusting layer, as shown in FIG. 8, x-coordinate x ₀ is transparent supporting surface of the first admittance adjusting layer side of the base layer becomes smaller than the x coordinate n _sub optical admittance of the wood surface, the minimum value x _a of the real part of the optical admittance of the first admittance adjusting layer, smaller than n _sub. As a result, the arc of the admittance locus of the first admittance adjustment layer becomes larger than when the base layer is not provided. When the optical admittance on the surface of the transparent metal film on the first admittance adjustment layer side is represented by Y1 (= x ₁ + iy ₁ ), the values of x ₁ and y ₁ are larger than those in the case where the base layer is not provided. Accordingly, when expressed by the optical admittance Y2 (= x ₂ + iy ₂ ) on the surface of the transparent metal film on the second admittance adjusting layer side, the value of x ₂ also becomes larger than the case where there is no underlying layer.

Further, based on the relational expression between the optical admittance Y on the surface of each layer and the electric field strength E existing on each layer, the real part of the optical admittances Y1 and Y2 on the surface of the transparent metal film; that is, the values of x ₁ and x ₂ are As the value increases, the electric field strength E decreases, and the electric field loss (light absorption) is suppressed. Therefore, even in the transparent conductor of the second aspect, the electric field loss of the transparent metal film is sufficiently suppressed, and the light transmittance of the transparent conductor is sufficiently increased.

The transparent conductor of the second aspect, among the x ₁ and x _2, are either Meanwhile, or both of 1.8 or more, preferably 2.0 or more. In particular, x ₁ is preferably 1.8 or more. The _{x 1} and _{x 2} is preferably 7.0 or less, more preferably 5.5 or less. x ₁ is the refractive index of the underlying layer, the thickness of the base layer, the refractive index of the first admittance adjusting layer and is adjusted in such a thickness of the first admittance adjusting layer. x ₂ is the refractive index and the transparent metal film is adjusted by the thickness or the like of the transparent metal film. For example, when the refractive index of the first admittance adjustment layer or the second admittance adjustment layer is high, or when the thickness is somewhat thick, the values of x ₁ and x ₂ tend to increase.

The absolute value (| x ₁ −x ₂ |) of the difference between x ₁ and x ₂ is preferably 1.5 or less, more preferably 1.0 or less, and even more preferably 0.8 or less. is there. In particular, in the case where the admittance locus of the transparent metal film and the horizontal axis intersect at the coordinate Ycross (x _cross , 0), | x ₁ −x ₂ | / x _cross is preferably smaller than 0.5. Preferably it is 0.3 or less, More preferably, it is 0.2 or less.

On the other hand, the admittance locus is preferably a center line of symmetry of the horizontal axis of the graph. For this purpose, a coordinate y ₁ of the imaginary part of the Y1, the coordinate y ₂ of the imaginary part of the Y2, y ₁ × y It is preferable to satisfy ₂ ≦ 0. Furthermore, | y ₁ + y ₂ | is preferably less than 0.8, more preferably 0.5 or less, and still more preferably 0.3 or less. If | y ₁ + y ₂ | is less than 0.8, the admittance trajectory tends to be line symmetric about the horizontal axis of the graph.

Further, in order to make the admittance locus line-symmetric with respect to the horizontal axis of the graph, it is preferable that y ₁ described above is sufficiently large. The value of the imaginary part of the optical admittance of the transparent metal film is large, and the admittance locus moves greatly in the direction of the vertical axis (imaginary part). Therefore, if y ₁ is too small, the absolute value of the imaginary part of the admittance coordinates becomes very large, admittance locus hardly become axisymmetric. y ₁ is preferably 0.5 or more, more preferably 1.0 to 5.0, and still more preferably 1.5 to 2.5. On the other hand, y ₂ described above is preferably −1.0 to −5.0, more preferably −1.5 to −2.5.

Also in the transparent conductor of the second aspect, to have a third admittance adjustment layer on the second admittance adjusting layer, it is finely adjusted more equivalent admittance Y _E.

(3) Optical Admittance of Transparent Conductor of Third Aspect FIG. 9B shows optical admittance of the transparent conductor of the third aspect. Transparent conductor of the third aspect (transparent support material (white plate substrate) / first admittance adjusting layer (TiO ₂ ) / low refractive index layer (SiO ₂ ) / transparent metal film (Ag) / low refractive index layer (SiO ₂ ) / Second admittance adjustment layer (TiO ₂ ) / transparent conductor with third admittance adjustment layer (SiO ₂ )). The horizontal axis of the graph is the real part when the optical admittance Y is represented by x + iy; that is, x in the equation, and the vertical axis is the imaginary part of the optical admittance; that is, y in the equation.

As described above, the distance between the coordinates (x _E , y _E ) of the equivalent admittance Y _E and the admittance coordinates (n _env , 0) (not shown) of the medium on which the light is incident is the reflection on the surface of the transparent conductor. It is proportional to the rate R. In the present invention, the distance (((x _E −n _env ) ² + (y _E )) between the coordinates (x _E , y _E ) of the equivalent admittance Y _E and the admittance coordinates (n _env , 0) of the medium on which light is incident. ² ) ^0.5 ) is preferably less than 0.5, more preferably 0.3 or less. If the distance is less than 0.5, the reflectance R of the transparent conductor surface is sufficiently small, and the light transmittance of the transparent conductor is likely to increase.

Here, in the transparent conductor according to the third aspect, the optical admittance at a wavelength of 570 nm on the surface of the transparent metal film on the first admittance adjustment layer side is Y1 (= x ₁ + ii ₁ ), and the second admittance adjustment of the transparent metal film is performed. When the optical admittance at the wavelength of 570 nm on the surface on the layer side is Y2 (= x ₂ + iy ₂ ), it is preferable that either one of x ₁ and x ₂ or both are 1.6 or more. When the transparent conductor includes a plurality of transparent metal films, the optical admittance on the surface of the transparent metal film closest to the first admittance adjustment layer side on the first admittance adjustment layer side is expressed as Y1 = x ₁ + iy ₁ and the optical admittance of the surface of the transparent metal film closest to the second admittance adjustment layer side on the second admittance adjustment layer side is Y2 = x ₂ + iy ₂ . either one of x ₁ and x ₂ is, if it is 1.6 or more, as described above, increases light transmission of the transparent conductor.

Therefore, in the transparent conductor of the third aspect, among the x ₁ and x _2, it is preferably either one or both of not less than 1.6, more preferably 1.8 or more, more preferably Is 2.0 or more. In particular, x ₁ is preferably 1.6 or more. The _{x 1} and _{x 2} is preferably 7.0 or less, more preferably 5.5 or less. x ₁ is the refractive index of the first admittance adjusting layer and is adjusted in such a thickness of the first admittance adjusting layer. x ₂ is the refractive index of the values and the transparent metal film x _1, is adjusted by the thickness or the like of the transparent metal film. For example, when the refractive index of the first admittance adjustment layer is high or the thickness is somewhat thick, the values of x ₁ and x ₂ are likely to increase.

As described above, admittance locus is preferably a center line of symmetry of the horizontal axis of the graph. For this purpose, a coordinate y ₁ of the imaginary part of the Y1, the coordinate y ₂ of the imaginary part of the Y2, y It is preferable to satisfy ₁ × y ₂ ≦ 0. Furthermore, | y ₁ + y ₂ | is preferably less than 0.8, more preferably 0.5 or less, and still more preferably 0.3 or less. If | y ₁ + y ₂ | is less than 0.8, the admittance trajectory tends to be line symmetric about the horizontal axis of the graph.

Further, in order to make the admittance locus line-symmetric with respect to the horizontal axis of the graph, it is preferable that y ₁ described above is sufficiently large. The value of the imaginary part of the optical admittance of the transparent metal film is large, and the admittance locus moves greatly in the direction of the vertical axis (imaginary part). Therefore, if y ₁ is too small, the absolute value of the imaginary part of the admittance coordinates becomes very large, admittance locus hardly become axisymmetric. y ₁ is preferably 0.2 or more, more preferably 0.3 to 1.5, and still more preferably 0.3 to 1.0. On the other hand, y ₂ described above is preferably −0.3 to −2.0, and more preferably −0.6 to −1.5.

Also in the transparent conductor of the third aspect, when with a third admittance adjustment layer on the second admittance adjusting layer, is finely adjusted more equivalent admittance Y _E.

3. Method for Forming Transparent Metal Film The transparent metal film contained in the transparent conductor of each of the above-described embodiments is preferably formed through the following two steps.
(1) Step of forming a growth nucleus (2) Step of forming a transparent metal film on the growth nucleus

As described above, when a transparent metal film is formed by a general vapor deposition method, a transparent metal film having a plasmon absorptivity of 15% or less and a thickness of 15 nm or less over the entire wavelength range of 400 nm to 800 nm is obtained. It is difficult to obtain. This is due to the following reason. Hereinafter, a case where a transparent metal film is formed on the first admittance adjusting layer will be described as an example.

When a transparent metal film is formed on the first admittance adjustment layer by a general vapor deposition method, atoms attached to the first admittance adjustment layer migrate (move) at the initial stage of film formation, Lump together to form a lump (island structure). And a film grows clinging to this lump. Therefore, in the film at the initial stage of film formation, there is a gap between the lumps and it is not conductive. When a lump further grows from this state and the thickness becomes about 15 μm, a part of the lump is connected and barely conducted. However, the film surface is not yet smooth and plasmon absorption is likely to occur.

On the other hand, if (1) the growth nucleus is formed in advance in the growth nucleus formation step, the material of the transparent metal film is difficult to migrate on the first admittance adjusting layer. Further, the interval between the growth nuclei is narrower than the interval between the lumps formed by migration of atoms. Therefore, when the film grows starting from this growth nucleus, a flat film is likely to be formed even if the thickness is small. That is, even if the thickness is small, conduction is obtained and a transparent metal film in which plasmon absorption does not occur is obtained.

(1) Growth nucleus formation process The growth nucleus for forming a transparent metal film is formed on a 1st admittance adjustment layer. There are the following two types of growth nucleus formation methods.
(I) A method in which a metal thin film having a thickness of 3 nm or less is formed on the first admittance adjusting layer by sputtering or vapor deposition, and this is used as a growth nucleus. (Ii) A metal layer is formed on the first admittance adjusting layer. , Dry etching this metal layer and using the remaining metal thin film as the growth nucleus

Method (i) When forming growth nuclei by the method (i), a thin film is formed of a metal that is difficult to migrate (move) on the first admittance adjusting layer. Examples of metals that can be growth nuclei include gold, platinum group, cobalt, molybdenum, titanium, aluminum, chromium, nickel, or alloys thereof. A growth nucleus may be formed by using only one of these, or a growth nucleus may be formed by combining two or more kinds. Among these, it is preferable to form a growth nucleus with platinum palladium, palladium, titanium, or aluminum. Platinum palladium or palladium is difficult to migrate on the photocatalyst layer, has a high affinity with the metal constituting the transparent metal film, and provides a dense and fine growth nucleus. The ratio of palladium contained in platinum palladium is preferably 10% by mass or more, and more preferably 20% by mass or more. When the proportion of palladium is 10% by mass or more, dense and fine growth nuclei are easily obtained, and plasmon absorption occurring in the transparent metal film is easily suppressed.

Titanium, aluminum, and the like can be grown while being finely crushed with the aid of IAD or the like, so that a growth nucleus equivalent to platinum palladium or palladium can be obtained.

The thin film (growth nucleus) made of the above metal is formed by sputtering or vapor deposition. The average thickness of the thin film (growth nucleus) is preferably 3 nm or less, more preferably 0.5 nm or less, still more preferably a monoatomic film, and particularly preferably a film in which metal atoms are attached to be separated from each other. is there. The average thickness of the thin film (growth nucleus) is adjusted by the film forming speed and the film forming time.

The thin film (growth nucleus) is formed by a known sputtering method or vapor deposition method. Examples of sputtering methods include ion beam sputtering, magnetron sputtering, reactive sputtering, bipolar sputtering, and bias sputtering. The sputtering time is appropriately selected according to the average thickness of the thin film (growth nucleus) to be formed and the film formation speed. The sputter deposition rate is preferably from 0.1 to 15 Å / second, more preferably from 0.1 to 7 秒 / second.

On the other hand, examples of vapor deposition include vacuum vapor deposition, electron beam vapor deposition, ion plating, and ion beam vapor deposition. The deposition time is appropriately selected according to the thin film to be formed (growth nuclei) and the deposition rate. The deposition rate is preferably 0.1 to 15 Å / second, more preferably 0.1 to 7 Å / second.

Method (ii) When forming growth nuclei by the method (ii), a metal layer is formed on the first admittance adjusting layer, and this metal layer is dry-etched to a desired thickness. The dry etching referred to in the present invention includes reactive gas etching in which etching is performed by a chemical reaction and a method of polishing with lens paper or the like, but etching that involves physical collision of etching gas, ions, radicals, and the like. A method is preferred. When the metal layer is etched by an etching method involving physical collision, uniform growth nuclei are easily formed on the entire photocatalyst layer.

The type of the metal layer (growth nucleus) is not particularly limited as long as it is a metal having a high affinity with the metal constituting the transparent metal film. The metal constituting the transparent metal film may be the same as or different from the metal; examples thereof include silver, gold, platinum group, titanium and aluminum.

The method for forming the metal layer is not particularly limited, and may be a vapor deposition method such as a vacuum deposition method, a sputtering method, an ion plating method, a plasma CVD method or a thermal CVD method, or a wet film formation method such as a plating method. sell. The average thickness of the metal layer to be formed is preferably 3 to 15 nm, more preferably 5 to 10 nm. If the average thickness of the metal layer is less than 3 nm, the amount of metal is small and there is a possibility that sufficient growth nuclei cannot be obtained.

The metal layer dry etching method is not particularly limited as long as it is an etching method involving physical collision as described above, and may be ion beam etching, reverse sputter etching, plasma etching, or the like. In particular, ion beam etching is particularly preferable from the viewpoint that desired unevenness can be easily formed on the etched thin film (growth nucleus). The metal layer may be dry-etched after a thin film (mask) such as titanium oxide is formed on the surface of the metal layer. The mask makes it easy to obtain desired uneven growth nuclei. The mask is removed together with the metal by dry etching.

The average thickness of the thin film (growth nucleus) obtained by dry etching of the metal layer is preferably 3 nm or less, more preferably 2 nm or less, still more preferably 0.01 to 1 nm, and particularly preferably 0.00. It is 01 to 0.2 nm. If the thickness of the thin film (growth nucleus) is too thick, even if the growth nucleus is formed, a thin transparent transparent metal film cannot be obtained. Furthermore, the thickness of the transparent metal film formed starting from this growth nucleus is increased. The average thickness of the growth nucleus is determined from the difference between the thickness of the metal layer and the etching thickness of the metal layer. The etching thickness of the metal layer is the product of the etching rate and the etching time. The etching rate is obtained from the time until a 50 nm thick metal layer separately prepared on a glass substrate is etched under the same conditions and the light transmittance after the etching becomes equivalent to that of the glass substrate (approximately 0 nm thickness). The average thickness of the growth nucleus is adjusted by the time for dry etching.

(2) Transparent metal film formation process A metal is laminated | stacked by the general vapor-phase film-forming method on the 1st admittance adjustment layer in which the above-mentioned growth nucleus was formed, and a transparent metal film is formed. The type of the vapor deposition method is not particularly limited, and may be, for example, a vacuum deposition method, a sputtering method, an ion plating method, a plasma CVD method, a thermal CVD method, or the like. Among these, the vacuum deposition method is preferable. According to the vacuum deposition method, it is easy to obtain a transparent metal film having a uniform thickness and a desired thickness.

4). Applications of transparent conductors The above-mentioned transparent conductors include various types of displays such as liquid crystal, plasma, organic electroluminescence, field emission, touch panels, mobile phones, electronic paper, various solar cells, various electroluminescent dimming elements, etc. It can be preferably used for a substrate of an optoelectronic device.

At this time, the surface of the transparent conductor (for example, the surface opposite to the transparent support material) may be bonded to another member via an adhesive layer or the like. In this case, as described above, it is preferable admittance coordinates of the equivalent admittance Y _E of the surface of the transparent conductor and the admittance coordinates of the adhesive layer is closer. Thereby, reflection at the interface between the transparent conductor and the adhesive layer is suppressed.

On the other hand, when the surface of the transparent conductor is used in construction as contact with air, it is preferred that close to the admittance coordinates of the admittance coordinates and the air equivalent admittance Y _E of the surface of the transparent conductor. Thereby, reflection of the light on the transparent conductor surface is suppressed.

B. The manufacturing method of a transparent conductor This invention also provides the manufacturing method of the transparent conductor of the following two aspects.

1. The manufacturing method of the transparent conductor of a 1st aspect The following four processes are contained in the manufacturing method of the transparent conductor of a 1st aspect.
(I) Step of forming a photocatalyst layer on a transparent support material (ii) Step of forming a transparent metal film on the photocatalyst layer formed in step (i) (iii) Irradiating the photocatalyst layer with light in a pattern Step (iv) Step of removing the transparent metal film in the region irradiated with light in the step (iii) In the method for producing the transparent conductor, a photocatalyst layer and a transparent metal film are optionally provided after the step (iv). There may be a step of forming a high refractive index layer covering the substrate.

The transparent conductor 400 obtained by the manufacturing method includes a transparent support material 31, a photocatalyst layer 38, and a transparent metal film 33 formed in a pattern, for example, as shown in FIG. A high refractive index layer (not shown) that covers the photocatalyst layer 38 and the transparent metal film 33 may be included on the transparent metal film 33.

(1-1) Structure of transparent conductor (Transparent support material)
The transparent support material is not particularly limited as long as it is transparent to visible light, and may be the same as the transparent support material of the transparent conductor described above. The transparent support material preferably has high transparency to visible light. Specifically, the average transmittance of light having a wavelength of 450 to 800 nm is preferably 85% or more, more preferably 88% or more, and further preferably 90% or more. When the average light transmittance of the transparent support material is 85% or more, the transparency of the transparent conductor is sufficiently increased. The light transmittance of the transparent support material is measured with a spectrophotometer.

The thickness of the transparent support material is preferably 1 μm to 20 mm, more preferably 10 μm to 2 mm, and even more preferably 30 μm to 1 mm. If the thickness of the transparent support material is greater than 1 μm, the strength of the transparent support material is increased, and the transparent support material is prevented from being cracked or torn during the production of the photocatalyst layer. On the other hand, if the thickness of the transparent support material is 20 mm or less, the flexibility of the transparent conductor is high, and the weight of the transparent conductor can be reduced.

(Photocatalyst layer)
The photocatalyst layer contains a photocatalyst. A photocatalyst is a substance that causes an oxidation / reduction reaction by irradiation with light (excitation light). When the photocatalyst is irradiated with light having energy larger than the energy gap between the conduction band and the valence band, electrons in the valence band are excited to generate conduction electrons and holes. Various oxidation / reduction reactions are caused by the reducing power of electrons generated in the conduction band and / or the oxidizing power of holes generated in the valence band. In the method for producing a transparent conductor according to this embodiment, the transparent metal film is patterned using oxidation / reduction by a photocatalyst as described later.

The photocatalyst layer may contain only the photocatalyst, and may contain a binder together with the photocatalyst. The amount of the photocatalyst contained in the photocatalyst layer is preferably 80% by mass or more, more preferably 90% by mass or more, and further preferably 95% by mass or more. If the amount of photocatalyst contained in the photocatalyst layer is 80% by mass or more, the above-described oxidation / reduction reaction is sufficiently performed.

The type of photocatalyst contained in the photocatalyst layer is not particularly limited, and examples thereof include titanium dioxide (TiO ₂ ), zinc oxide (ZnO), tin oxide (SnO ₂ ), strontium titanate (SrTiO ₃ ), and tungsten oxide. (WO ₃ ), bismuth oxide (Bi ₂ O ₃ ), iron oxide (Fe ₂ O ₃ ) and the like are included. The photocatalyst layer may contain only one type of photocatalyst or two or more types. From the viewpoint of stability and availability, the photocatalyst is preferably titanium oxide.

The binder contained in the photocatalyst layer is not particularly limited as long as it can bind the photocatalyst particles and has a binding energy that is not decomposed by the oxidation / reduction reaction by the photocatalyst. Examples of the binder include organopolysiloxane and the like.

The thickness of the photocatalyst layer is preferably 3 nm to 100 nm, more preferably 10 nm to 50 nm. If the thickness of the photocatalyst layer is 3 nm or more, the above-described oxidation / reduction reaction occurs sufficiently, so that the transparent metal film can be sufficiently patterned. On the other hand, when the thickness of the photocatalyst layer is 100 nm or less, the transparency of the photocatalyst layer is increased, and the transparency of the transparent conductor is easily increased.

(Transparent metal film)
The transparent metal film is formed in a pattern on the photocatalyst layer. In the transparent conductor, a region where the transparent metal film is formed is a conducting portion, and a region where the transparent metal film is not formed is an insulating portion. The pattern of the transparent metal film can be a wiring pattern of various elements.

The transparent metal film may be a film made of the same material as the transparent metal film of the transparent conductor described above. The thickness of the transparent metal film is preferably 5 to 15 nm. If the thickness of the transparent metal film is 5 nm or more, the surface electrical resistance value is sufficiently low. On the other hand, when the thickness of the transparent metal film is 15 nm or less, the original reflection of the metal hardly occurs. Therefore, the transparency of the transparent metal film is increased, and the transparent metal film is hardly visually recognized. The thickness of the transparent metal film is measured with an ellipsometer or the like.

(High refractive index layer)
A high refractive index layer may be formed on the photocatalyst layer and the transparent metal film. When the high refractive index layer is included in the transparent conductor, reflection of light on the surface of the transparent conductor is suppressed, and light transparency of the transparent conductor is increased. The term refractive index layer may be a layer made of the same material as the first admittance adjusting layer or the second admittance adjusting layer of the transparent conductor described above.

The refractive index of light having a wavelength of 510 nm of the high refractive index layer is preferably 1.8 or more, more preferably 2.0 or more, and further preferably 2.2 or more. When the refractive index of the high refractive index layer is 1.8 or more, the light transmittance of the transparent conductor is sufficiently increased. The refractive index of the high refractive index layer is measured with an ellipsometer.

The thickness of the high refractive index layer is preferably 3 nm to 100 nm, more preferably 10 nm to 60 nm. When the thickness of the high refractive index layer is in the above range, the light transmittance of the transparent conductor is sufficiently increased.

(1-2) Method for Producing Transparent Conductor As described above, the method for producing a transparent conductor of this embodiment includes the following four steps.
(I) Step of forming a photocatalyst layer on a transparent support material (ii) Step of forming a transparent metal film on the photocatalyst layer formed in step (i) (iii) Irradiating the photocatalyst layer with light in a pattern (Iv) The step of removing the transparent metal film in the region irradiated with light in the step (iii) If necessary, after the step (iv), (v) a high refractive index layer covering the photocatalyst layer and the transparent metal film May be formed.

In the technique of Patent Document 4 described above, the wettability of the photocatalyst layer is changed by light irradiation. And the liquid for forming a transparent conductive film is made to adhere to a pattern using the difference in wettability of this light irradiation part and a non-irradiation part. However, in this method, the liquid for forming the transparent conductive film easily adheres to a region other than the desired region, and it is difficult to form a fine pattern.

On the other hand, in this embodiment, a transparent metal film is laminated on the photocatalyst layer (step (ii)); by light irradiation, the transparent metal film is on the photocatalyst layer side, or the photocatalyst layer is on the transparent metal film side. Electrons are moved (step (iii)). Thereby, the metal atom on the surface of the transparent metal film in contact with the photocatalyst is ionized, and the adhesion between the transparent metal film and the photocatalyst layer is lowered. Therefore, in the step (iv), the transparent metal film in the desired region; that is, the region irradiated with light can be easily peeled off, and a fine pattern can be formed.

(I) Photocatalyst Layer Film Formation Step As shown in FIG. 47A, a photocatalyst layer 38 containing a photocatalyst is formed on the transparent support material 31. The film formation method of the photocatalyst layer is not particularly limited, and may be a wet film formation method or a dry film formation method. Usually, the photocatalyst layer 38 is formed on the entire surface of the transparent support material 31, but there may be a region where the photocatalyst layer 38 is not formed as necessary.

In the wet film formation method, the composition for forming a photocatalyst layer in which the above-described photocatalyst or its precursor is dispersed in a solvent is applied by a spin coat method, a spray coat method, a dip coat method, a roll coat method, a dip coat method, or the like. It can be a method of drying by heating. In the composition for photocatalyst layer formation, the above-mentioned binder and its precursor may be contained as needed.

When the photocatalyst layer is a layer made of titanium dioxide, a sol in which amorphous titania fine particles are dispersed is applied by the above-described method, and this is baked at a crystallization temperature or higher to form a photocatalyst layer. Also good.

On the other hand, the dry film forming method may be a method of depositing the above-mentioned photocatalyst on a transparent support material by a vacuum deposition method, an ion plating method, a sputtering method, a plasma CVD method, a thermal CVD method, or the like.

(Ii) Transparent Metal Film Forming Step As shown in FIG. 47B, the transparent metal film 33 is formed on the photocatalyst layer 38 described above. The method for forming the transparent metal film is not particularly limited, and may be a wet film forming method or a dry film forming method.

The wet film formation method may be, for example, a method of electroless plating the above-described metal. Further, the dry film forming method may be a method of forming a metal film by a vacuum deposition method, an ion plating method, a sputtering method, a plasma CVD method, a thermal CVD method, or the like. Among these, the vacuum deposition method is preferable. According to the vacuum deposition method, it is easy to obtain a transparent metal film having a uniform thickness and a desired thickness. In addition, since the film is formed under vacuum, it is difficult for foreign matter to enter the transparent metal film.

In this embodiment, it is particularly preferable to form growth nuclei before forming the transparent metal film. When the transparent metal film is formed after the growth nuclei are formed, a transparent metal film having good conductivity can be obtained even if the thickness is small. Also, according to this method, plasmon absorption is unlikely to occur even if the transparent metal film is thin. The method for forming the transparent metal film after forming the growth nucleus may be the same method as the method for forming the transparent metal film of the transparent conductor described above.

(Iii) Light Irradiation Step As shown in FIG. 47C, the photocatalyst layer 38 is irradiated with light (excitation light) 111 in a pattern. When light is irradiated, the photocatalyst in the photocatalyst layer 38 is excited and the metal atoms in the transparent metal film 33 are ionized.

The light irradiation to the photocatalyst layer 38 may be performed from the transparent metal film 33 side or from the transparent support material 31 side. Both the transparent metal film 33 and the transparent support material 31 have high light transmittance. Therefore, the photocatalyst is sufficiently excited regardless of which direction the light is irradiated.

In the light irradiation step, the method of irradiating the light 111 in a pattern is not particularly limited; as shown in FIG. 47 (c), a method of irradiating light through the mask 112 may be used. A method of irradiating the pupil in a line shape may be used.

The light to be irradiated may be light having a wavelength that can excite the photocatalyst, and is determined by the type of the photocatalyst. For example, when the photocatalyst is titanium oxide (TiO ₂ ), it can be light with a wavelength of 380 nm. Examples of such light sources include various mercury lamps, metal halide lamps, xenon lamps, excimer lamps, ultraviolet lamps, laser light sources such as excimer lasers and YAG lasers.

The amount of light applied to the photocatalyst layer is preferably 50 to 500,000 J / cm ² , more preferably 100 to 100,000 J / cm ² , and further preferably 500 to 10,000 J / cm ² . When the light amount is irradiated, the transparent metal film is sufficiently ionized, and the transparent metal film can be sufficiently removed in the step (iv) described later. From the viewpoint of production efficiency, the irradiation time is preferably short.

This step may be performed by causing light (excitation light) to enter the apparatus for forming the transparent metal film described above. Moreover, when the apparatus has a load lock unit, this step may be performed in the load lock unit. Thereby, it can suppress that a foreign material adheres to a transparent metal film.

(Iv) Transparent Metal Film Removal Step As shown in FIG. 47 (d), the transparent metal film 33 in the region irradiated with the light 111 is removed. The surface of the transparent metal film 33 in contact with the photocatalyst layer 38 in the light irradiation region is ionized in the step (iii); the adhesion between the photocatalyst layer 38 and the transparent metal film 33 is reduced. Therefore, the transparent metal film 33 in the region is easily peeled off.

The method for peeling the transparent metal film is not particularly limited as long as the transparent metal film can be peeled only in a desired region. For example, a method of spraying an inert gas on the transparent metal film, a method of immersing the transparent metal film in a solution, a method of tilting the transparent metal film to peel off by its own weight, a method of rubbing the transparent metal film, and the like can be used. Further, in order to promote the peelability of the transparent metal film in the light irradiation region, vibration or impact may be applied to the light irradiation region, or a gas that reacts only with the transparent metal film ionized by the photocatalyst may be contacted.

(V) High Refractive Index Layer Film Formation Step As described above, after patterning the transparent metal film into a desired shape in step (iv), a high refractive index layer is formed so as to cover the transparent metal film and the photocatalyst layer. May be. When the high refractive index layer is formed, the surface reflection of the transparent conductor is suppressed, and the light transmittance of the transparent conductor is increased.

The film forming method of the high refractive index layer is not particularly limited, and may be a wet film forming method or a dry film forming method. The wet film-forming method is a method for forming a high refractive index layer in which the above-described highly refractive material or a precursor thereof is dispersed in a solvent, spin coating method, spray coating method, dip coating method, roll coating method, It may be applied by a dip coating method or the like; In the composition for forming a high refractive index layer, the above-mentioned binder and its precursor may be contained as necessary.

The dry film forming method may be a method of depositing the above-described highly refractive material on a transparent support material by a vacuum deposition method, an ion plating method, a sputtering method, a plasma CVD method, a thermal CVD method, or the like.

(1-3) Use of transparent conductor The transparent conductor obtained by the above-mentioned method includes various types of displays such as liquid crystal, plasma, organic electroluminescence, field emission, touch panels, mobile phones, electronic paper, and various solar cells. It can be preferably used for transparent electrodes, transparent circuits and transparent wirings of various optoelectronic devices such as various electroluminescence light control elements.

2. The manufacturing method of the transparent conductor of 2nd aspect The manufacturing method of the transparent conductor of 2nd aspect is a manufacturing method of the transparent conductor which has a transparent support material and the transparent metal film formed on the transparent support material. It is. In addition to the transparent support material and the transparent metal film, the transparent conductor may include other layers as necessary.

The manufacturing method of this aspect includes the following two steps.
(I) Step A of forming a transparent metal film on the transparent support material by sputtering.
(Ii) Process B for reverse sputtering the transparent metal film
In the manufacturing method of this aspect, the process A and the process B may be performed simultaneously (first form), or the process A and the process B may be performed alternately (second form).

When a transparent metal film is formed on a transparent support material by a general sputtering method, plasma is generated between the transparent support material and the target material to sputter the target material. Then, the sputtered particles that are repelled from the surface of the target material are deposited on a transparent support material to obtain a transparent metal film.

As described above, when a transparent metal film is formed by such a sputtering method, sputtered particles (atoms) attached to the transparent support material migrate (move) and gather together. Therefore, at the initial stage of film formation, many lumps are formed on the transparent support material. And a film | membrane grows by setting this lump as a nucleus, The clearance gap between lumps is filled, and it becomes a continuous film. For this reason, if the transparent metal film is thin, plasmon absorption or the like cannot be achieved or sufficient conduction cannot be obtained. On the other hand, when the thickness of the transparent metal film is increased, the original reflection of the metal occurs. Accordingly, a transparent metal film having both low surface electric resistance and high light transmittance cannot be obtained by a normal sputtering method.

On the other hand, in the manufacturing method of this aspect, the transparent metal film is reverse-sputtered simultaneously with the formation of the transparent metal film or after partially forming the transparent metal film. When the transparent metal film is reverse sputtered at the initial stage of film formation, a part of the transparent metal film is scraped off by ion collision. Thereby, fine irregularities are formed in the transparent metal film. Further, the metal film is finely crushed by the collision of ions, and fine metal particles (growth nuclei) adhere to the entire surface of the transparent support material. If there are growth nuclei on the transparent support material, the sputtered particles deposited on the transparent support material are difficult to migrate. Furthermore, the growth nuclei produced by the method have a narrow interval between adjacent growth nuclei. Therefore, films that grow from the growth nucleus as a starting point are easily connected.

Therefore, according to the manufacturing method of this aspect, a transparent metal film that is sufficiently electrically conductive even when the thickness is small and hardly causes plasmon absorption can be obtained. Further, since the transparent metal film is thin, absorption of the metal itself is difficult to occur.

(2-1) First Mode In the first mode of the manufacturing method of this aspect, a step of forming a transparent metal film on the transparent support material by a sputtering method (Step A) and a reverse metal sputtering of the transparent metal film are performed. A process (process B) is performed simultaneously. The process A and the process B are performed simultaneously as long as at least a part of the process A and a part of the process B are performed at the same time, and it is not always necessary to match the start timing and the end timing of both processes.

Here, the step of forming the transparent metal film (step A) is preferably performed continuously from the start of film formation to the end of film formation from the viewpoint of the film formation efficiency of the transparent metal film. On the other hand, the step of reverse sputtering the transparent metal film (step B) can be performed in an arbitrary period from the start to the end of the formation of the transparent metal film. For example, the process B may be performed over the entire period from the start to the end of the process A; the process B may be performed once or a plurality of times only during a partial period from the start to the end of the process A. Good.

The step of reverse sputtering the transparent metal film (step B) is particularly preferably performed at least in the initial stage of forming the transparent metal film. As described above, when the transparent metal film is reverse sputtered at the initial stage of the formation of the transparent metal film, the transparent metal film is finely crushed by argon ions or the like, and growth nuclei are formed on the entire surface of the transparent support material. Then, a transparent metal film grows from the growth film as a starting point; a film that is smooth and has little plasmon absorption is obtained even if it is thin. In this embodiment, it is preferable to perform the step B when the thickness of the transparent metal film formed on at least the transparent support material is 3 nm or less; the step B is started simultaneously with the start of the step A, and the transparent metal film More preferably, step B is continued until the thickness of the film becomes 3 nm or more. When reverse sputtering is performed on a transparent metal film having a thickness of 3 nm or less, growth nuclei having a small particle size are likely to be formed. As a result, it is easy to obtain a transparent metal film that is smooth and has little plasmon absorption even with a thin film.

The manufacturing method of the first embodiment can be performed by a sputtering apparatus capable of generating plasma on the transparent support material side and the target material side, respectively. An example of the sputtering apparatus 600 used for the manufacturing method of the first embodiment is shown in FIG. As shown in FIG. 51, the sputtering apparatus 600 includes a vacuum chamber 601, a substrate holder 602 for holding the transparent support material 41 disposed in the vacuum chamber 601, and a vacuum chamber 601. And a target holder 604 for holding the target material 603. The substrate holder 602 and the target holder 604 are independently connected to the substrate side power source 605 and the target side power source 606, respectively. The vacuum chamber 601 is connected to a gas pipe 607 for introducing an inert gas and a vacuum pump (not shown) for adjusting the degree of vacuum in the vacuum chamber.

Process A and process B are performed by setting the transparent support material 41 on the substrate holder 602 in the vacuum chamber 601 and setting the target material 603 for forming the transparent metal film on the target holder 604. In the sputtering apparatus shown in FIG. 51, only one type of target material 603 is disposed, but two or more types of target materials 603 may be disposed, and the resulting transparent metal film may be used as an alloy. Subsequently, after the inside of the vacuum chamber 601 is reduced in pressure by a vacuum pump (not shown), an inert gas is introduced into the vacuum chamber 601 from the gas pipe 607. The type of the inert gas is not particularly limited, but is usually argon gas.

In this state, a voltage is applied to the target holder 604 from the target-side power source 606 to generate plasma on the surface of the target material 603. Then, the target material 603 is repelled by the generated argon ions and the like, and the target material is deposited on the transparent support material 41 to form a transparent metal film (step A). The current passed through the target holder 604 may be direct current (DC) or high frequency current (RF).

On the other hand, a voltage is also applied to the substrate holder 602 from the substrate-side power source 605 to generate plasma on the surface of the transparent support material 41. Then, the transparent metal film formed on the transparent support material 41 is reverse sputtered (etched) by the generated argon ions or the like. Since the transparent support material 41 is usually an insulator, the current passed through the substrate holder 602 is usually a high frequency current (RF).

Here, the distance between the transparent support material 41 and the target material 603 in the vacuum chamber 601 is preferably 1 to 500 mm, and more preferably 40 to 150 mm. In particular, when the distance is 150 mm or less, the target material repelled by argon atoms or the like is efficiently deposited on the transparent support material 41.

Also, the power applied to the substrate holder 602 is made smaller than the power applied to the target holder 604. That is, the intensity of the plasma generated on the transparent support material 41 side is made lower than the intensity of the plasma generated on the target material 603 side. The speed at which the transparent metal film is scraped off by reverse sputtering (etching) is made slower than the speed at which the target material is deposited on the transparent support material 41, and the target particles are deposited little by little on the transparent support material 41.

The ratio of the power applied to the substrate holder 602 to the power applied to the target holder 604 is appropriately adjusted according to the type of the sputtering apparatus 600 and the distance between the target material 603 and the transparent support material 41. Specifically, the average absorption rate (reference value) of light having a wavelength of 400 to 800 nm of the transparent metal film produced by performing only the process A, and the wavelength of 400 to 800 nm of the transparent metal film produced by performing the process A and the process B. The average absorption rate of light at 800 nm is compared. And the ratio of the electric power applied to the board | substrate holder 602 is adjusted so that the average absorption rate of the transparent metal film produced by performing the process A and the process B may become lower than the said reference value.

As shown in Examples and Comparative Examples described later, when the ratio is a certain value or more, a transparent metal film having both low surface electric resistance and high light transmittance (low light absorption) can be obtained. However, when the ratio is excessively high, the film forming speed of the transparent metal film is excessively slow. Furthermore, since the surface of the transparent metal film is roughened by reverse sputtering, the surface electrical resistance tends to increase and the light transmittance tends to decrease.

The average light absorptance of the transparent metal film is measured by the following method.
(I) Transmittance and reflectance of the transparent conductor by allowing measurement light to enter from an angle inclined by 5 ° with respect to the front surface of the transparent metal film of the transparent conductor (laminated body of transparent support material and transparent metal film). Is measured with a spectrophotometer. From the measured average transmittance and average reflectance, the average absorption rate (= 100− (average transmittance + average reflectance)) of the transparent conductor is calculated.
(Ii) The average absorptance of a separately prepared transparent support material is calculated in the same manner, and this is used as reference data.
(Iii) The reference data is subtracted from the average absorption rate of the transparent conductor, and this is used as the average absorption rate of the transparent metal film.

The film forming rate of the transparent metal film in the manufacturing method of the first embodiment is preferably 0.01 to 4 nm / s, more preferably 0.2 to 2 nm / s. When the film forming rate of the transparent metal film is 4 nm / s or less, it is easy to control the film thickness. The film forming speed of the transparent metal film is a value obtained by dividing the final thickness of the transparent metal film by the total time for performing the process A. The film forming speed of the transparent metal film is adjusted by the electric power applied to the target holder 604 and the substrate holder 602 described above.

The thickness of the transparent metal film formed in the first form is preferably 15 nm or less, more preferably 3 to 13 nm, and further preferably 5 to 12 nm. When the thickness of the transparent metal film is 15 nm or less, the original reflection of the metal hardly occurs and the light transmittance of the transparent metal film is likely to increase. The thickness of the transparent metal film is measured with a film thickness meter or an ellipsometer using a crystal resonator.

Here, the target material 603 for forming the transparent metal film is not particularly limited, and may be silver, copper, gold, platinum group, titanium, chromium, or the like. The target material 603 may include only one type of metal or two or more types. From the viewpoint that the obtained transparent metal film has low plasmon absorption and good conductivity, the target material 603 is preferably silver, an alloy containing 90 at% or more of silver, or pure silver. When the target material 603 is a silver alloy, the metal combined with silver can be zinc, gold, copper, palladium, aluminum, manganese, bismuth, neodymium, or the like. For example, when silver is combined with zinc, the resulting transparent metal film has improved sulfidation resistance. When silver is combined with gold, the resulting transparent metal film has improved salt resistance (NaCl) resistance. Further, when silver is combined with copper, the oxidation resistance of the obtained transparent metal film is increased.

On the other hand, the transparent support material 41 is not particularly limited as long as it is a material having high transparency to visible light. The transparent support material 41 can be the same as the transparent support material of the transparent conductor described above.

The transparent support material 41 may be a laminate of the resin film and a layer made of a dielectric material or an oxide semiconductor material. In this case, it is preferable to form a transparent metal film on the layer made of the dielectric material or the oxide semiconductor material of the transparent support material 41. When a layer made of a dielectric material or an oxide semiconductor material is present on the surface of the transparent support material 41, the transparent support material 41 is hardly damaged when the transparent metal film is reverse-sputtered. Further, when a layer made of a dielectric material or an oxide semiconductor material is present on the transparent support material 41, reflection of light on the surface of the transparent conductor is easily suppressed.

The refractive index of light having a wavelength of 570 nm of the dielectric material or the oxide semiconductor material is preferably larger than 1.5, more preferably 1.6 to 2.5, and still more preferably 1.8 to 2.5. is there. When the refractive index of light is 1.5 or more, reflection of light on the surface of the transparent metal film is easily suppressed.

The dielectric material or oxide semiconductor material is preferably a metal oxide or metal sulfide. The metal oxide or metal sulfide may be the same as the metal oxide or metal sulfide contained in the first admittance layer of the transparent conductor.

The transparent support material 41 preferably has high transparency to visible light; the average transmittance of light having a wavelength of 450 to 800 nm is preferably 70% or more, more preferably 80% or more, and 85% or more. More preferably. If the average light transmittance of the transparent support material 41 is 80% or more, the light transmittance of the entire transparent conductor is likely to be increased. On the other hand, the average absorptance of light having a wavelength of 450 to 800 nm of the transparent support material 41 is preferably 10% or less, more preferably 5% or less, and further preferably 3% or less.

The average transmittance of the transparent support material 41 is a value measured by making measurement light incident from an angle inclined by 5 ° with respect to the front surface of the transparent support material 41. On the other hand, the average absorptance is a value calculated by measuring the average reflectance of the transparent support material 41 in the same manner as the average transmittance; average absorptance = 100− (average transmittance + average reflectance). Average transmittance and average reflectance are measured with a spectrophotometer.

The haze value of the transparent support material 41 is preferably 0.01 to 2.5, more preferably 0.1 to 1.2. The haze value of the transparent conductor obtained can be suppressed as the haze value of the transparent support material 41 is 2.5 or less. The haze value is measured with a haze meter.

The thickness of the transparent support material 41 is preferably 1 μm to 20 mm, more preferably 10 μm to 2 mm. When the thickness of the transparent support material is 1 μm or more, the transparent support material 41 is difficult to break when the transparent metal film is formed. On the other hand, if the thickness of the transparent support material 41 is 20 mm or less, the flexibility of the transparent conductor is easily increased, and the thickness of the device using the transparent conductor can be reduced. Moreover, the apparatus using a transparent conductor can also be reduced in weight.

(2-2) Second Form In the second form of the manufacturing method of this aspect, a step of forming a transparent metal film on the transparent support material by a sputtering method (Step A) and a film formation on the transparent support material are performed. The process of reverse sputtering the transparent metal film (process B) is performed alternately. As described above, when the transparent metal film is reverse sputtered in the process B, the transparent metal film formed in the process A is finely crushed by argon ions or the like, and growth nuclei are formed on the entire surface of the transparent support material. Then, when the transparent metal film is formed again in the process A, the transparent metal film grows from the growth film as a starting point; even if it is thin, a smooth film with little plasmon absorption is obtained.

In this embodiment, only the three steps of step A, step B, and step A may be performed, and step A, step B, step A, step B, and so on may be repeated for a short time. In the second embodiment, at least one of the steps B is a step of setting the thickness of the transparent metal film having the thickness X to a thickness Y of less than 3 nm, and a step of setting the thickness Y to 95% or less of the thickness X. It is preferable. The ratio of the thickness Y to the thickness X is more preferably 92% or less, and still more preferably 88% or less. When reverse sputtering is performed so that the value of the thickness Y of the transparent metal film after the completion of the process B is 95% or less with respect to the thickness X of the transparent metal film before the start of the process B, the transparent metal film is sufficient. When broken up, fine growth nuclei are formed. Further, if the thickness Y at this time is less than 3 nm, the size of the growth nucleus becomes sufficiently small, and the thickness of the finally obtained transparent metal film becomes thin.

The thickness X of the transparent metal film before the start of the above process B is measured with a film thickness meter or an ellipsometer using a crystal resonator. It can also be calculated from the deposition rate of the transparent metal film. The film formation rate is obtained separately from the time required for producing a transparent metal film of 50 nm on a glass substrate under the same conditions as in step A.

On the other hand, the thickness Y of the transparent metal film after completion of the process B (reverse sputtering) is obtained from the difference between the thickness X of the transparent metal film before the start of reverse sputtering and the thickness of the film reduced by reverse sputtering. The thickness of the film reduced by reverse sputtering can be obtained by the product of the etching rate during reverse sputtering and the reverse sputtering time. The etching rate is separately reverse sputtered on a glass substrate under the same conditions as in process B on a 50 nm thick transparent metal film manufactured under the same conditions as in process A, and the light transmittance after reverse sputtering becomes equivalent to that of the glass substrate. It is determined from the time until (approximately thickness 0 nm).

Hereinafter, the process A and process B of the second embodiment will be specifically described. In the second embodiment, first, a transparent metal film is formed on a transparent support material by sputtering (step A). The target material and transparent support material used in the second form can be the same as the target material and transparent support material used in the first form.

The apparatus for forming the transparent metal film is not particularly limited, and may be a sputtering apparatus capable of generating plasma on the transparent support material side and the target material side used in the first embodiment. A general high-frequency sputtering apparatus or the like can also be used.

When forming a transparent metal film with a sputtering apparatus (performing step A), for example, as shown in FIG. 52A, a transparent support material 41 is placed on a substrate holder 602 in a vacuum chamber 601 and transparent. A target material 603 for forming a metal film is placed on the target holder 604. Note that in the sputtering apparatus 600 shown in FIG. 52A, only one type of target material 603 is arranged, but two or more types of target materials 603 may be arranged, and the resulting transparent metal film may be used as an alloy. Subsequently, after the inside of the vacuum chamber 601 is reduced in pressure by a vacuum pump (not shown), an inert gas is introduced into the vacuum chamber 601 from the gas pipe 607. The type of the inert gas is not particularly limited, but is usually argon gas.

In this state, a voltage is applied to the target holder 604 from the target-side power source 606 to generate plasma 608 on the surface of the target material 603. Then, the target material 603 is repelled by the generated argon ions and the like, and the target material is deposited on the transparent support material 41 to form a transparent metal film. The thickness of the transparent metal film after completion of the first step A is preferably 0.1 to 3 nm, more preferably 0.1 to 2 nm, still more preferably 0.1 to 1 nm, and particularly preferably. Is 0.1 to 0.5 nm. The thickness of the transparent metal film is adjusted by the target power and sputtering time. The thickness of the transparent metal film is measured with a film thickness meter or an ellipsometer using a crystal resonator.

After completion of step A, the transparent metal film formed in step A is reverse sputtered (step B). The reverse sputtering (process B) of the transparent metal film can be performed by the same sputtering apparatus 600 as in process A. For example, as shown in FIG. 52B, a voltage is applied to the substrate holder 602 from the substrate-side power source 605 to generate plasma 608 on the surface of the transparent support material 41. Then, the transparent metal film formed in the step A is reverse sputtered with the generated argon ions or the like.

In the process B, as described above, the transparent metal film has a thickness Y of 95% or less and a thickness Y of less than 3 nm with respect to the thickness X of the transparent metal film before reverse sputtering. The metal film is preferably reverse sputtered (etched). The thickness of the transparent metal film after step B is adjusted by the substrate side power and the reverse sputtering time.

After the completion of the process B, a transparent metal film is further formed by a sputtering method (process A). Further, if necessary, the process B and the process A are repeated any number of times. The second and subsequent processes A and the second and subsequent processes B may be the same as the previously performed processes A and B.

The final thickness of the transparent metal film formed by the production method of the second embodiment is preferably 15 nm or less, more preferably 3 to 13 nm, and further preferably 7 to 12 nm. When the thickness of the transparent metal film is 15 nm or less, the original reflection of the metal hardly occurs and the light transmittance of the transparent metal film increases.

The film forming rate of the transparent metal film in the production method of the second embodiment is preferably 0.01 to 4 nm / s, more preferably 0.1 to 3 nm / s, and still more preferably 0.2 to 2 nm / s. When the film forming rate of the transparent metal film is 4 nm / s or less, it is easy to control the film thickness. The film forming speed of the transparent metal film is a value obtained by dividing the final thickness of the transparent metal film by the total time for performing the process A. The film forming speed of the transparent metal film is adjusted by the power applied to the target holder 604 described above, the reverse sputtering time of the process B, the power applied to the substrate holder 602, and the like.

(2-3) Other Steps In the manufacturing method according to the second embodiment, other steps may be included as necessary in addition to the above-described steps A and B. Another example of the process may be a process of forming a high refractive index layer made of a dielectric material or an oxide semiconductor material on the transparent metal film obtained by the above-described process A and process B. When a high refractive index layer is formed on the transparent metal film, reflection of light on the surface of the transparent metal film is easily suppressed.

The film formation method of the high refractive index layer is not particularly limited, and may be a general vapor deposition method such as a vacuum deposition method, a sputtering method, an ion plating method, a plasma CVD method, a thermal CVD method, or the like. At this time, in order to increase the film density of the high refractive index layer, IAD (ion assist) or the like may be performed.

The refractive index of light having a wavelength of 570 nm of the dielectric material or oxide semiconductor material for forming the high refractive index layer is preferably larger than 1.5, more preferably 1.6 to 2.5, It is preferably 1.8 to 2.5. When the refractive index of light is 1.5 or more, reflection of light on the surface of the transparent metal film is suppressed.

The dielectric material or oxide semiconductor material for forming the high refractive index layer is preferably a metal oxide or a metal sulfide. Examples of metal oxide or metal _{_{_{_{sulfide, TiO 2, ITO, ZnO,}}}} ZnS, Nb 2 O 5, ZrO 2, CeO 2, Ta 2 O 5, Ti 3 O 5, Ti 4 O 7, Ti 2 O ₃ , TiO, SnO ₂ , La ₂ Ti ₂ O ₇ , IZO, AZO (Al-doped ZnO), GZO (Ga-doped ZnO), ATO (Sb-doped SnO), ICO (indium cerium oxide), and the like.

The thickness of the high refractive index layer is preferably 10 to 150 nm, more preferably 20 to 80 nm. When the thickness of the high refractive index layer is 10 nm or more, reflection on the surface of the transparent metal film is suppressed by the high refractive index layer. As a result, the light transmittance of the transparent conductor is likely to increase. On the other hand, when the thickness of the high refractive index layer is 150 nm or less, the light transmittance of the transparent conductor is hardly lowered by the high refractive index layer. The thickness of the high refractive index layer is measured with an ellipsometer.

(Physical properties of transparent conductor)
The average absorption rate of light having a wavelength of 400 to 800 nm of the transparent metal film of the transparent conductor obtained by the method of this embodiment is preferably 20% or less, more preferably 15% or less, and further preferably 10% or less. It is. The light transmittance of a transparent conductor increases that the average absorption factor of the light of the said wavelength of a transparent metal film is 20% or less. Therefore, the transparent conductor can be applied to various uses.

Further, the maximum absorption rate of light having a wavelength of 400 nm to 800 nm of the transparent metal film is preferably 30% or less, more preferably 15% or less, and further preferably 12% or less. When the maximum absorptance is 30% or less over the entire wavelength range of 400 nm to 800 nm, the transmitted light of the transparent conductor is difficult to be colored. As described above, the average absorption rate and the maximum absorption rate of the transparent metal film are calculated by subtracting the absorption rate (reference data) of the transparent support material from the absorption rate of the transparent conductor.

The surface electric resistance value of the transparent conductor is preferably 200Ω / □ or less, more preferably 50Ω / □, and further preferably 15Ω / □ or less. A transparent conductor having a surface electric resistance value of 200Ω / □ or less can be applied to a transparent conductive panel for a capacitive touch panel. The surface electrical resistance value of the transparent conductor can be adjusted by the thickness of the transparent metal film or the like. The surface electrical resistance value of the transparent conductor can be measured in accordance with, for example, JIS K7194, ASTM D257, and the like. It can also be measured by a commercially available surface resistivity meter.

(Use of transparent conductor)
Transparent conductors obtained by the method of this embodiment include various types of displays such as liquid crystal, plasma, organic electroluminescence, field emission, touch panels, mobile phones, electronic paper, various solar cells, various electroluminescence dimming elements, etc. It can be preferably used for substrates of various optoelectronic devices.

Hereinafter, the present invention will be described in more detail with reference to examples. However, the scope of the present invention is not limited by this.

In the following experimental examples, examples, and comparative examples, measurement of light transmittance, reflectance, and absorption rate, measurement of film thickness, determination of admittance, measurement of surface electrical resistance, measurement of plasmon absorption rate, and The haze measurement was performed as follows.

<Measurement method of light transmittance, reflectance, and absorptance>
Measuring light (for example, light having a wavelength of 450 nm to 800 nm) is incident from an angle inclined by 5 ° with respect to the front surface of the transparent conductor, and the light transmittance and reflectance are measured by Hitachi, Ltd .: spectrophotometer U4100. Was measured. The absorptance was calculated from a formula of 100− (transmittance + reflectance). The measurement light was incident from the second admittance adjustment layer side.

<Measurement method of film thickness>
The thickness of each layer is described in J. A. Woollam Co. Inc. The measurement was made with a VB-250 VASE ellipsometer manufactured by the manufacturer.

<Method of determining admittance>
The admittance of each interface constituting the transparent conductor was calculated by the thin film design software Essential Macleod Ver.9.4.375. Note that the thickness d, refractive index n, and absorption coefficient k of each layer necessary for the calculation are as follows. A. Woollam Co. Inc. The measurement was made with a VB-250 VASE ellipsometer manufactured by the manufacturer.

<Measurement method of surface electrical resistance>
Measured with a Loresta EP MCP-T360 manufactured by Mitsubishi Chemical Analytech.

<Measurement method of a * value and b * value in L * a * b * color system>
The a * value and b * value in the L * a * b * color system were measured with a spectrophotometer U4100 manufactured by Hitachi, Ltd.

<Measurement method of plasmon absorptance at wavelengths of 450 nm to 800 nm>
The plasmon absorption rate of the transparent metal film was measured as follows. On a transparent glass substrate, a growth nucleus made of platinum palladium was formed on the substrate by a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Co., for 0.2 s (0.1 nm). The average thickness of platinum-palladium was calculated from the film formation rate at the manufacturer's nominal value of the sputtering apparatus. Thereafter, a silver (metal film) film having a thickness of 20 nm was formed on a substrate to which platinum palladium was adhered by a BMC-800T vapor deposition machine manufactured by SYNCHRON. The resistance heating at this time was 210 A, and the film formation rate was 5 Å / s. The reflectance and transmittance of the obtained metal film were measured and calculated as absorptivity = 100− (transmittance + reflectance). This metal film was assumed to have no plasmon absorption, and this was used as reference data. On the other hand, a transparent metal film was formed on the transparent glass substrate in the same manner as in each Example, the reflectance and transmittance of the transparent metal film were measured, and the absorptance was calculated. Then, a value obtained by subtracting the reference data from the obtained absorption rate data was defined as the plasmon absorption rate. The light transmittance and reflectance were measured with a spectrophotometer U4100 manufactured by Hitachi, Ltd.

<Measurement method of haze>
This was measured with a Nippon Denshoku haze meter (NDH-2000).

[Experimental Examples 1 to 4]
Production of transparent metal film: A transparent metal film was formed by the following method, and the plasmon absorption rate of each transparent metal film was specified.

・ Experimental example 1
Yamanaka Semiconductor's white substrate (Φ30 mm, thickness 2 mm) was ultrasonically cleaned in ultrapure water (Ultrapure water device Synergy UV manufactured by Millipore). As a sonic cleaning machine, VS-100III manufactured by ASONE was used.
On the glass substrate, Ag was vapor-deposited with a BMC-800T vapor deposition machine (210A resistance heating) manufactured by SYNCHRON, and a transparent metal film made of Ag was obtained. The film formation rate was 5 Å / s. The thickness of the transparent metal film was 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, and 12 nm. FIG. 11 shows the plasmon absorption rate derived from the absorption rate of each transparent metal film.

As shown in FIG. 11, when the transparent metal film was formed by a general vapor deposition method, the plasmon absorption rate was large when the thickness of the transparent metal film was 6 to 10 nm. Only when the thickness was 12 nm, the plasmon absorption rate was within 15% over the entire wavelength range of 400 nm to 800 nm.

・ Experimental example 2
Yamanaka Semiconductor's white substrate (Φ30 mm, thickness 2 mm) was ultrasonically cleaned in ultrapure water (Ultrapure water device Synergy UV manufactured by Millipore). As a sonic cleaning machine, VS-100III manufactured by ASONE was used.
On the glass substrate, a platinum palladium film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc. to form a growth nucleus having an average thickness of 0.1 nm. The average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus. Subsequently, Ag was vapor-deposited by a BMC-800T vapor deposition machine (210A resistance heating) manufactured by SYNCHRON, and a transparent metal film made of Ag was produced. The film formation rate was 5 Å / s.
The thickness of the transparent metal film was 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, and 10 nm. FIG. 12 shows the plasmon absorption rate derived from the absorption rate of each transparent metal film.

As shown in FIG. 12, when a transparent metal film is formed after forming a growth nucleus made of platinum-palladium, plasmon absorption is achieved over the entire wavelength range of 400 nm to 800 nm even when the thickness of the transparent metal film is 3 nm and 4 nm. The rate was within 15%.

Experimental example 3
Corning non-alkali glass substrate (EAGLE XG (thickness 7 mm × length 30 mm × width 30 mm)) was ultrasonically cleaned in ultrapure water (an ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used.
On the glass substrate, Ag was vapor-deposited with a BMC-800T vapor deposition machine (210A resistance heating) manufactured by SYNCHRON, and a transparent metal film made of Ag was obtained. The film formation rate was 5 Å / s. The thickness of the transparent metal film was 8 nm, 12 nm, 15 nm, 19.5 nm, and 24 nm. FIG. 13 shows the plasmon absorption rate derived from the absorption rate of each transparent metal film.

As shown in FIG. 13, when a transparent metal film was formed by a general vapor deposition method, there was a region where the plasmon absorption rate was 15% or more even when the thickness of the transparent metal film was 12 nm. Only when the thickness was 15 nm or more, the plasmon absorptivity was within 15% over the entire wavelength range of 400 nm to 800 nm.

Experimental example 4
Corning non-alkali glass substrate (EAGLE XG (thickness 7 mm × length 30 mm × width 30 mm)) was ultrasonically cleaned in ultrapure water (an ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used.
On the glass substrate, a platinum palladium film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc. to form a growth nucleus having an average thickness of 0.1 nm. The average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus. Subsequently, Ag was vapor-deposited by a BMC-800T vapor deposition machine (210A resistance heating) manufactured by SYNCHRON, and a transparent metal film made of Ag was produced. The film formation rate was 5 Å / s.
The thickness of the transparent metal film was 8 nm, 12 nm, 15 nm, and 19.5 nm. FIG. 14 shows the plasmon absorption rate derived from the absorption rate of each transparent metal film.

As shown in FIG. 14, when a transparent metal film is formed after forming a growth nucleus made of platinum palladium, the plasmon absorption is less than 15% in the wavelength range of 400 nm to 800 nm regardless of the thickness of any film. It was.

[Examples A-1 to A-7 and Comparative Examples A-1 to A-3]
A transparent conductor was laminated by the following method.

[Example A-1]
Yamanaka Semiconductor's white substrate (Φ30 mm, thickness 2 mm) was ultrasonically cleaned in ultrapure water (Ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. A first admittance adjusting layer / transparent metal film / second admittance adjusting layer / third admittance adjusting layer was formed on the glass substrate (transparent support).

The average transmittance of the obtained transparent conductor at a wavelength of 450 to 800 nm, the average reflectance at a wavelength of 500 to 700 nm, the average absorptance at a wavelength of 400 to 800 nm, the maximum value of the absorptance at a wavelength of 400 to 800 nm, L * a * b * A * value and b * value in the color system, surface electrical resistance, haze of transparent support material, haze of the obtained transparent conductor, and haze degradation (haze of transparent conductor-haze of transparent support material) Table 1 shows. Also, the interface of the wavelength 570nm optical admittance Y1 = x 1 + _iy 1 and the first admittance adjusting layer transparent metal _film, the optical admittance of wavelength 570nm of the interface between the second admittance adjusting layer of the transparent metal film Table 2 also shows x ₁ , y ₁ , x ₂ , and y ₂ , and equivalent admittance Y _E (x _E , y _E ) when Y 2 = x ₂ + iy ₂ . Table 2 also shows the distance (δx + δy) between the air admittance Y _env (x _env , y _env ) and the equivalent admittance Y _E (x _E , y _E ). Further, FIG. 15A shows the spectral characteristics of the obtained transparent conductor, and FIG. 15B shows the admittance locus of the transparent conductor. The light absorption rate of the obtained transparent conductor was 25% or less over the entire wavelength range of 400 nm to 800 nm.

(First admittance adjustment layer)
TiO ₂ was deposited by electron beam (EB) using Gener 1300 manufactured by Optorun under the introduction of oxygen (50 sccm) at 320 mA and a film formation rate of 3 Å / s. The obtained first admittance adjusting layer was 31 nm.

(Transparent metal film)
After the first admittance adjusting layer was formed, Ag was vapor-deposited with Optorun Gener 1300 (220 mA) to obtain a metal layer made of Ag. The film formation rate was 5 Å / s. Thereafter, titanium oxide (manufactured by Fuji Titanium Industry Co., Ti ₂ O ₅ , crystal type (1-3 mm)) was vapor-deposited on the surface of the metal layer to form a mask having an average thickness of 3 nm. Vapor deposition was performed on a Gener 1300 from Optorun. Thereafter, the Ag film was dry-etched with an ion beam of Gener 1300 manufactured by Optorun to obtain a growth nucleus composed of an Ag thin film. The etching conditions were an ion beam current of 200 mA, a voltage of 200 V, and an acceleration voltage of 400 V, and O ₂ gas: 50 sccm and Ar gas: 8 sccm were introduced into the ion beam apparatus.
Furthermore, Ag was laminated on the transparent support material on which the growth nuclei were formed again using Gener 1300 (220 mA) manufactured by Optorun to obtain a transparent metal film (8 nm) made of Ag. The plasmon absorption rate of the obtained transparent metal film was 15% or less over the entire wavelength range of 400 nm to 800 nm.

(Second admittance adjustment layer)
TiO ₂ was deposited by electron beam (EB) using Gener 1300 manufactured by Optorun under the introduction of oxygen (50 sccm) at 320 mA and a film formation rate of 3 Å / s. The obtained second admittance adjusting layer was 21 nm.

(Third admittance adjustment layer)
SiO ₂ was deposited by electron beam (EB) at 60 mA and a film formation rate of 10 Å / s using a Gener 1300 manufactured by Optorun. The obtained third admittance adjusting layer was 50 nm.

[Example A-2]
Corning non-alkali glass substrate (EAGLE XG (thickness 7 mm × length 30 mm × width 30 mm)) was ultrasonically cleaned in ultrapure water (an ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. A first admittance adjusting layer / transparent metal film / second admittance adjusting layer / third admittance adjusting layer was formed on the glass substrate (transparent support).

For the obtained transparent conductor, the average transmittance of the obtained transparent conductor at a wavelength of 450 to 800 nm, the average reflectance at a wavelength of 500 to 700 nm, the average absorptance at a wavelength of 400 to 800 nm, and the absorptance at a wavelength of 400 to 800 nm. Maximum value, a * value and b * value in L * a * b * color system, surface electrical resistance, haze of transparent support material, haze of obtained transparent conductor, and haze degradation (haze of transparent conductor) Table 1 shows the haze of the transparent support. Also, the interface of the wavelength 570nm optical admittance Y1 = x 1 + _iy 1 and the first admittance adjusting layer transparent metal _film, the optical admittance of wavelength 570nm of the interface between the second admittance adjusting layer of the transparent metal film Table 2 also shows x ₁ , y ₁ , x ₂ , and y ₂ , and equivalent admittance Y _E (x _E , y _E ) when Y 2 = x ₂ + iy ₂ . Table 2 also shows the distance (δx + δy) between the air admittance Y _env (x _env , y _env ) and the equivalent admittance Y _E (x _E , y _E ). The spectral characteristic of the obtained transparent conductor is shown in FIG. 16A, and the admittance locus of the transparent conductor is shown in FIG. 16B. The light absorption rate of the obtained transparent conductor was 25% or less over the entire wavelength range of 400 nm to 800 nm.

(First admittance adjustment layer)
TiO ₂ was deposited by electron beam (EB) using a BMC-800T vapor deposition machine manufactured by SYNCHRON Co., with introduction of oxygen (2 × 10 ⁻² Pa), 320 mA, and a film formation rate of 3 Å / s. The obtained first admittance adjusting layer was 30 nm.

(Transparent metal film)
Using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., platinum palladium was deposited for 0.4 seconds to form growth nuclei having an average thickness of 0.2 nm. The average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus. Subsequently, Ag was vapor-deposited by a BMC-800T vapor deposition machine (210A resistance heating) manufactured by SYNCHRON, and a transparent metal film (10 nm) made of Ag was obtained. The film formation rate was 5 Å / s. The method for forming the transparent metal film was the same as in Experimental Examples 2 and 4 described above, and the plasmon absorption rate of the obtained transparent metal film was 15% or less over the entire wavelength range of 400 nm to 800 nm.

(Second admittance adjustment layer)
TiO ₂ was deposited by electron beam (EB) using a BMC-800T vapor deposition machine manufactured by SYNCHRON Co., with introduction of oxygen (2 × 10 ⁻² Pa), 320 mA, and a film formation rate of 3 Å / s. The obtained second admittance adjusting layer was 21 nm.

(Third admittance adjustment layer)
SiO ₂ was deposited by electron beam (EB) at 60 mA and a deposition rate of 10 Å / s using a BMC-800T vapor deposition machine manufactured by Shincron. The obtained third admittance adjusting layer was 51 nm.

[Example A-3]
Yamanaka Semiconductor's white substrate (Φ30 mm, thickness 2 mm) was ultrasonically cleaned in ultrapure water (Ultrapure water device Synergy UV manufactured by Millipore). As a sonic cleaning machine, VS-100III manufactured by ASONE was used. A first admittance adjusting layer / transparent metal film / second admittance adjusting layer was formed on the glass substrate (transparent support).

For the obtained transparent conductor, the average transmittance of the obtained transparent conductor at a wavelength of 450 to 800 nm, the average reflectance at a wavelength of 500 to 700 nm, the average absorptance at a wavelength of 400 to 800 nm, and the absorptance at a wavelength of 400 to 800 nm. Maximum value, a * value and b * value in L * a * b * color system, surface electrical resistance, haze of transparent support material, haze of obtained transparent conductor, and haze degradation (haze of transparent conductor) Table 1 shows the haze of the transparent support. Also, the interface of the wavelength 570nm optical admittance Y1 = x 1 + _iy 1 and the first admittance adjusting layer transparent metal _film, the optical admittance of wavelength 570nm of the interface between the second admittance adjusting layer of the transparent metal film Table 2 also shows x ₁ , y ₁ , x ₂ , and y ₂ , and equivalent admittance Y _E (x _E , y _E ) when Y 2 = x ₂ + iy ₂ . Table 2 also shows the distance (δx + δy) between the air admittance Y _env (x _env , y _env ) and the equivalent admittance Y _E (x _E , y _E ). The spectral characteristic of the obtained transparent conductor is shown in FIG. 17A, and the admittance locus of the transparent conductor is shown in FIG. 17B. The light absorption rate of the obtained transparent conductor was 25% or less over the entire wavelength range of 400 nm to 800 nm.

(First admittance adjustment layer)
TiO ₂ was deposited by electron beam (EB) using a BMC-800T vapor deposition machine manufactured by SYNCHRON Co., with introduction of oxygen (2 × 10 ⁻² Pa), 320 mA, and a film formation rate of 3 Å / s. The obtained first admittance adjusting layer was 33 nm.

(Transparent metal film)
Ti was deposited by electron beam (EB) at 320 mA and a deposition rate of 3 Å / s by a BMC-800T vapor deposition machine manufactured by SYNCHRON. The obtained growth nucleus was 0.1 nm.
Subsequently, Ag was sputter-deposited by magnetron sputtering manufactured by Osaka Vacuum Co., Ltd. to obtain a transparent metal film (10 nm) made of Ag. The film formation rate was 15 Å / s. The method for forming the transparent metal film was the same as in Experimental Examples 2 and 4 described above, and the plasmon absorption rate of the obtained transparent metal film was 15% or less over the entire wavelength range of 400 nm to 800 nm.

(Second admittance adjustment layer)
ITO was sputter-deposited by magnetron sputtering manufactured by Osaka Vacuum Co., Ltd. to obtain a second admittance adjusting layer (36 nm) made of ITO. The film formation rate was 10 Å / s.

[Example A-4]
Corning non-alkali glass substrate (EAGLE XG (thickness 7 mm × length 30 mm × width 30 mm)) was ultrasonically cleaned in ultrapure water (an ultrapure water device Synergy UV manufactured by Millipore). As a sonic cleaning machine, VS-100III manufactured by ASONE was used. A first admittance adjusting layer / transparent metal film / second admittance adjusting layer was formed on the glass substrate (transparent support).

For the obtained transparent conductor, the average transmittance of the obtained transparent conductor at a wavelength of 450 to 800 nm, the average reflectance at a wavelength of 500 to 700 nm, the average absorptance at a wavelength of 400 to 800 nm, and the absorptance at a wavelength of 400 to 800 nm. Maximum value, a * value and b * value in L * a * b * color system, surface electrical resistance, haze of transparent support material, haze of obtained transparent conductor, and haze degradation (haze of transparent conductor) Table 1 shows the haze of the transparent support. Also, the interface of the wavelength 570nm optical admittance Y1 = x 1 + _iy 1 and the first admittance adjusting layer transparent metal _film, the optical admittance of wavelength 570nm of the interface between the second admittance adjusting layer of the transparent metal film Table 2 also shows x ₁ , y ₁ , x ₂ , and y ₂ , and equivalent admittance Y _E (x _E , y _E ) when Y 2 = x ₂ + iy ₂ . Table 2 also shows the distance (δx + δy) between the air admittance Y _env (x _env , y _env ) and the equivalent admittance Y _E (x _E , y _E ). The spectral characteristic of the obtained transparent conductor is shown in FIG. 18A, and the admittance locus of the transparent conductor is shown in FIG. 18B. The light absorption rate of the obtained transparent conductor was 25% or less over the entire wavelength range of 400 nm to 800 nm.

(First admittance adjustment layer)
TiO ₂ was deposited by electron beam (EB) using a BMC-800T vapor deposition machine manufactured by SYNCHRON Co., with introduction of oxygen (2 × 10 ⁻² Pa), 320 mA, and a film formation rate of 3 Å / s. The obtained first admittance adjusting layer was 35 nm.

(Transparent metal film)
Using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., platinum palladium was deposited for 0.2 seconds to form growth nuclei with an average thickness of 0.1 nm. The average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
Subsequently, Ag was vapor-deposited by a BMC-800T vapor deposition machine (210A resistance heating) manufactured by SYNCHRON, and a transparent metal film (7 nm) made of Ag was obtained. The film formation rate was 5 Å / s. The method for forming the transparent metal film was the same as in Experimental Examples 2 and 4 described above, and the plasmon absorption rate of the obtained transparent metal film was 15% or less over the entire wavelength range of 400 nm to 800 nm.

(Second admittance adjustment layer)
TiO ₂ was deposited by electron beam (EB) using a BMC-800T vapor deposition machine manufactured by SYNCHRON Co., with introduction of oxygen (2 × 10 ⁻² Pa), 320 mA, and a film formation rate of 3 Å / s. The obtained first admittance adjusting layer was 42 nm.

[Comparative Example A-1]
Yamanaka Semiconductor's white substrate (Φ30 mm, thickness 2 mm) was ultrasonically cleaned in ultrapure water (Ultrapure water device Synergy UV manufactured by Millipore). As a sonic cleaning machine, VS-100III manufactured by ASONE was used. A transparent metal film / admittance adjusting layer was formed on the glass substrate (transparent support material).

For the obtained transparent conductor, the average transmittance of the obtained transparent conductor at a wavelength of 450 to 800 nm, the average reflectance at a wavelength of 500 to 700 nm, the average absorptance at a wavelength of 400 to 800 nm, and the absorptance at a wavelength of 400 to 800 nm. Maximum value, a * value and b * value in L * a * b * color system, surface electrical resistance, haze of transparent support material, haze of obtained transparent conductor, and haze degradation (haze of transparent conductor) Table 1 shows the haze of the transparent support. In addition, the optical admittance of wavelength 570nm of the interface between the transparent support of a transparent metal film _{_{_{Y N = x N + iy N}}} , the optical admittance of wavelength 570nm of the interface between the second admittance adjusting layer of the transparent metal film Y2 Table 2 also shows x _N , y _N , x ₂ , and y ₂ , and equivalent admittance Y _E (x _E , y _E ) when = x ₂ + iy ₂ . Table 2 also shows the distance (δx + δy) between the air admittance Y _env (x _env , y _env ) and the equivalent admittance Y _E (x _E , y _E ). The spectral characteristics of the obtained transparent conductor are shown in FIG. 19A, and the admittance locus of the transparent conductor is shown in FIG. 19B. The light absorptance of the obtained transparent conductor exceeded 25% in a partial region having a wavelength of 400 nm to 800 nm.

(Transparent metal film)
Using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., platinum palladium was deposited for 0.2 seconds to form growth nuclei with an average thickness of 0.1 nm. The average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
Subsequently, Ag was vapor-deposited by a BMC-800T vapor deposition machine (210A resistance heating) manufactured by SYNCHRON, and a transparent metal film (8 nm) made of Ag was obtained. The film formation rate was 5 Å / s. The method for forming the transparent metal film was the same as in Experimental Examples 2 and 4 described above, and the plasmon absorption rate of the obtained transparent metal film was 15% or less over the entire wavelength range of 400 nm to 800 nm.

(Admittance adjustment layer)
Y ₂ O ₃ was deposited by electron beam (EB) at 250 mA and a deposition rate of 4 Å / s using a BMC-800T vapor deposition machine manufactured by Shincron. The thickness of the obtained admittance adjusting layer was 55 nm.

[Comparative Example A-2]
Corning non-alkali glass substrate (EAGLE XG (thickness 7 mm × length 30 mm × width 30 mm)) was ultrasonically cleaned in ultrapure water (an ultrapure water device Synergy UV manufactured by Millipore). As a sonic cleaning machine, VS-100III manufactured by ASONE was used. A first admittance adjusting layer / transparent metal film / second admittance adjusting layer was formed on the glass substrate (transparent support).

For the obtained transparent conductor, the average transmittance of the obtained transparent conductor at a wavelength of 450 to 800 nm, the average reflectance at a wavelength of 500 to 700 nm, the average absorptance at a wavelength of 400 to 800 nm, and the absorptance at a wavelength of 400 to 800 nm. Maximum value, a * value and b * value in L * a * b * color system, surface electrical resistance, haze of transparent support material, haze of obtained transparent conductor, and haze degradation (haze of transparent conductor) Table 1 shows the haze of the transparent support. Also, the interface of the wavelength 570nm optical admittance Y1 = x 1 + _iy 1 and the first admittance adjusting layer transparent metal _film, the optical admittance of wavelength 570nm of the interface between the second admittance adjusting layer of the transparent metal film Table 2 also shows x ₁ , y ₁ , x ₂ , and y ₂ , and equivalent admittance Y _E (x _E , y _E ) when Y 2 = x ₂ + iy ₂ . Table 2 also shows the distance (δx + δy) between the air admittance Y _env (x _env , y _env ) and the equivalent admittance Y _E (x _E , y _E ). The spectral characteristics of the obtained transparent conductor are shown in FIG. 20A, and the admittance locus of the transparent conductor is shown in FIG. 20B. The light absorptance of the obtained transparent conductor exceeded 25% in a partial region having a wavelength of 400 nm to 800 nm.

(Transparent metal film)
Without producing growth nuclei, Ag was directly deposited on the first admittance adjusting layer by a BMC-800T deposition machine (210A resistance heating) manufactured by SYNCHRON, to obtain a transparent metal film (7 nm) made of Ag. . The film formation rate was 5 Å / s. The method for forming the transparent metal film was the same as in Experimental Examples 2 and 4 described above, and the plasmon absorption rate of the obtained transparent metal film was 15% or more over the entire wavelength range of 400 nm to 800 nm.

(Second admittance adjustment layer)
TiO ₂ was deposited by electron beam (EB) using a BMC-800T vapor deposition machine manufactured by SYNCHRON Co., with introduction of oxygen (2 × 10 ⁻² Pa), 320 mA, and a film formation rate of 3 Å / s. The obtained second admittance adjusting layer was 42 nm.

[Example A-5]
Yamanaka Semiconductor's white substrate (Φ30 mm, thickness 2 mm) was ultrasonically cleaned in ultrapure water (Ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. A first admittance adjusting layer / transparent metal film / second admittance adjusting layer was formed on the glass substrate (transparent support).

For the obtained transparent conductor, the average transmittance of the obtained transparent conductor at a wavelength of 450 to 800 nm, the average reflectance at a wavelength of 500 to 700 nm, the average absorptance at a wavelength of 400 to 800 nm, and the absorptance at a wavelength of 400 to 800 nm. Maximum value, a * value and b * value in L * a * b * color system, surface electrical resistance, haze of transparent support material, haze of obtained transparent conductor, and haze degradation (haze of transparent conductor) Table 1 shows the haze of the transparent support. Also, the interface of the wavelength 570nm optical admittance Y1 = x 1 + _iy 1 and the first admittance adjusting layer transparent metal _film, the optical admittance of wavelength 570nm of the interface between the second admittance adjusting layer of the transparent metal film Table 2 also shows x ₁ , y ₁ , x ₂ , and y ₂ , and equivalent admittance Y _E (x _E , y _E ) when Y 2 = x ₂ + iy ₂ . Table 2 also shows the distance (δx + δy) between the air admittance Y _env (x _env , y _env ) and the equivalent admittance Y _E (x _E , y _E ). Moreover, the spectral characteristic of the obtained transparent conductor is shown in FIG. 21A, and the admittance locus of the transparent conductor is shown in FIG. 21B.

(First admittance adjustment layer)
TiO ₂ was deposited by electron beam (EB) using Gener 1300 manufactured by Optorun under the introduction of oxygen (50 sccm) at 320 mA and a film formation rate of 3 Å / s. The obtained first admittance adjusting layer was 15 nm.

(Transparent metal film)
Using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., platinum palladium was deposited for 0.2 seconds to form growth nuclei with an average thickness of 0.1 nm. The average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
Subsequently, Ag was vapor-deposited by Gener 1300 (210A resistance heating) manufactured by Optorun to obtain a transparent metal film (10 nm) made of Ag. The film formation rate was 7 Å / s. The method for forming the transparent metal film was the same as in Experimental Examples 2 and 4 described above, and the plasmon absorption rate of the obtained transparent metal film was 15% or less over a wavelength range of 400 nm to 800 nm.

(Second admittance adjustment layer)
TiO ₂ was deposited by electron beam (EB) using Gener 1300 manufactured by Optorun under the introduction of oxygen (50 sccm) at 320 mA and a film formation rate of 3 Å / s. The obtained second admittance adjusting layer was 29 nm.

[Example A-6]
A first admittance adjusting layer / transparent metal film / second admittance adjusting layer was formed on Toyobo PET (Cosmo Shine A4300 50 μm product) (transparent support material).

For the obtained transparent conductor, the average transmittance of the obtained transparent conductor at a wavelength of 450 to 800 nm, the average reflectance at a wavelength of 500 to 700 nm, the average absorptance at a wavelength of 400 to 800 nm, and the absorptance at a wavelength of 400 to 800 nm. Maximum value, a * value and b * value in L * a * b * color system, surface electrical resistance, haze of transparent support material, haze of obtained transparent conductor, and haze degradation (haze of transparent conductor) Table 1 shows the haze of the transparent support. Also, the interface of the wavelength 570nm optical admittance Y1 = x 1 + _iy 1 and the first admittance adjusting layer transparent metal _film, the optical admittance of wavelength 570nm of the interface between the second admittance adjusting layer of the transparent metal film Table 2 also shows x ₁ , y ₁ , x ₂ , and y ₂ , and equivalent admittance Y _E (x _E , y _E ) when Y 2 = x ₂ + iy ₂ . Table 2 also shows the distance (δx + δy) between the air admittance Y _env (x _env , y _env ) and the equivalent admittance Y _E (x _E , y _E ). Moreover, the spectral characteristic of the obtained transparent conductor is shown in FIG. 22A, and the admittance locus of the transparent conductor is shown in FIG. 22B.

(First admittance adjustment layer)
TiO ₂ was deposited by electron beam (EB) using Gener 1300 manufactured by Optorun under the introduction of oxygen (50 sccm) at 320 mA and a film formation rate of 3 Å / s. The obtained first admittance adjusting layer was 43 nm.

(Transparent metal film)
Using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., platinum palladium was deposited for 0.2 seconds to form growth nuclei with an average thickness of 0.1 nm. The average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
Subsequently, Ag was vapor-deposited by Gener 1300 (210A resistance heating) manufactured by Optorun to obtain a transparent metal film (8 nm) made of Ag. The film formation rate was 4 Å / s. The method for forming the transparent metal film was the same as in Experimental Examples 2 and 4 described above, and the plasmon absorption rate of the obtained transparent metal film was 15% or less over a wavelength range of 400 nm to 800 nm.

(Second admittance adjustment layer)
TiO ₂ was deposited by electron beam (EB) using Gener 1300 manufactured by Optorun under the introduction of oxygen (50 sccm) at 320 mA and a film formation rate of 3 Å / s. The obtained second admittance adjusting layer was 40 nm.

[Example A-7]
Yamanaka Semiconductor's white substrate (Φ30 mm, thickness 2 mm) was ultrasonically cleaned in ultrapure water (Ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. A first admittance adjusting layer / transparent metal film 1 / other admittance adjusting layer / transparent metal film 2 / second admittance adjusting layer was formed on the glass substrate (transparent support).

For the obtained transparent conductor, the average transmittance of the obtained transparent conductor at a wavelength of 450 to 800 nm, the average reflectance at a wavelength of 500 to 700 nm, the average absorptance at a wavelength of 400 to 800 nm, and the absorptance at a wavelength of 400 to 800 nm. Maximum value, a * value and b * value in L * a * b * color system, surface electrical resistance, haze of transparent support material, haze of obtained transparent conductor, and haze degradation (haze of transparent conductor) Table 1 shows the haze of the transparent support. Also, the interface of the wavelength 570nm optical admittance Y1 = x 1 + _iy 1 and the first admittance adjusting layer transparent metal _film, the optical admittance of wavelength 570nm of the interface between the second admittance adjusting layer of the transparent metal film Table 2 also shows x ₁ , y ₁ , x ₂ , and y ₂ , and equivalent admittance Y _E (x _E , y _E ) when Y 2 = x ₂ + iy ₂ . Table 2 also shows the distance (δx + δy) between the air admittance Y _env (x _env , y _env ) and the equivalent admittance Y _E (x _E , y _E ). Further, FIG. 23 shows the admittance locus of the obtained transparent conductor.
In this embodiment, two transparent metal films are included, but the optical admittance at the interface of the first admittance adjusting layer of the transparent metal film 1 on the substrate side is Y1 = x ₁ + iy ₁ and the transparent metal film 2 on the air side is used. The optical admittance at the interface of the second admittance adjustment layer is Y2 = x ₂ + iy ₂ .

(First admittance adjustment layer)
TiO ₂ was deposited by electron beam (EB) using Gener 1300 manufactured by Optorun under the introduction of oxygen (50 sccm) at 320 mA and a film formation rate of 3 Å / s. The obtained first admittance adjusting layer was 35 nm.

(Transparent metal film 1)
Using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., platinum palladium was deposited for 0.2 seconds to form growth nuclei with an average thickness of 0.1 nm. The average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
Subsequently, Ag was vapor-deposited by Gener 1300 (210A resistance heating) manufactured by Optorun to obtain a transparent metal film (5 nm) made of Ag. The film formation rate was 4 Å / s. The method for forming the transparent metal film was the same as in Experimental Examples 2 and 4 described above, and the plasmon absorption rate of the obtained transparent metal film was 15% or less over a wavelength range of 400 nm to 800 nm.

(Other admittance adjustment layers)
TiO ₂ was deposited by electron beam (EB) using Gener 1300 manufactured by Optorun under the introduction of oxygen (50 sccm) at 320 mA and a film formation rate of 3 Å / s. The other admittance adjusting layer obtained was 23 nm.

(Transparent metal film 2)
Using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., platinum palladium was deposited for 0.2 seconds to form growth nuclei with an average thickness of 0.1 nm. The average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
Subsequently, Ag was vapor-deposited by Gener 1300 (210A resistance heating) manufactured by Optorun to obtain a transparent metal film (5 nm) made of Ag. The film formation rate was 4 Å / s. The method for forming the transparent metal film was the same as in Experimental Examples 2 and 4 described above, and the plasmon absorption rate of the obtained transparent metal film was 15% or less over a wavelength range of 400 nm to 800 nm.

(Second admittance adjustment layer)
TiO ₂ was deposited by electron beam (EB) using Gener 1300 manufactured by Optorun under the introduction of oxygen (50 sccm) at 320 mA and a film formation rate of 3 Å / s. The obtained second admittance adjusting layer was 31 nm.

[Comparative Example A-3]
Yamanaka Semiconductor's white substrate (Φ30 mm, thickness 2 mm) was ultrasonically cleaned in ultrapure water (Ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used.

A silver nanowire aqueous dispersion similar to that in Example 2 of the aforementioned Prior Art Document 2 was spin-coated on the substrate and baked at 120 ° C. for 20 minutes. The coater used was 1K-DX manufactured by MIKASA, and the thermostat used was ST-120 manufactured by ESPEC.
Table 1 shows the transmittance, reflectance, absorptance, a * value and b * value in the L * a * b * color system, and surface electrical resistance of the transparent conductor obtained. The spectral characteristics of the obtained transparent conductor are shown in FIG.

As shown in Table 2, the transparent metal film is sandwiched between the first admittance adjusting layer and the second admittance adjusting layer; the optical admittance at a wavelength of 570 nm at the interface with the first admittance adjusting layer of the transparent metal film is Y1 = x ₁ + iy expressed in _1, if _{x 1} and _{x 2} is at least 1.6 when expressed the optical admittance of wavelength 570nm of the interface between the second admittance adjusting layer transparent metal film Y2 ₌ x 2 + iy _2, equivalent admittance Y _E (x _E , y _E ) is close to the admittance coordinate (1, 0) of air. Further, the x-coordinate (x _E ) of the equivalent admittance coordinate Y _E is larger than 1 than the admittance coordinate (1,0) of air (Examples A-1 to A-7). As shown in Table 1, in these examples, the average transmittance of light having a wavelength of 450 nm to 800 nm of the transparent conductor was 79.9% or more.

In contrast, in Comparative Example A-1 in which the first admittance adjusting layer was not formed, the light absorptance was high, and the average transmittance of light with a wavelength of 450 nm to 800 nm of the transparent conductor was as low as 73.7%. . Further, in Comparative Example A-2 in which the light absorptance of the transparent conductor exceeds 25% in a partial region of a wavelength of 400 nm to 800 nm, the x coordinate (x _E ) of the equivalent admittance Y _E is larger than 1. The average transmittance of light having a wavelength of 450 nm to 800 nm was as low as 71.9%.

Further, in Comparative Example A-3 in which silver nanowires were formed, the surface electrical resistance was high and the haze degradation was large.

In Examples B-1 to B-8 and Comparative Examples B-1 and B-2, the transmittance, reflectance, and absorption rate of the transparent conductor, a * value and b in the L * a * b * color system * Value and surface electric resistance are measured in the same manner as in Example A-1.

[Example B-1]
Yamanaka Semiconductor's white substrate (Φ30 mm, thickness 2 mm) was ultrasonically cleaned in ultrapure water (Ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. An underlayer / first admittance adjusting layer / transparent metal film / second admittance adjusting layer was formed on the white plate substrate (transparent support). The obtained transparent conductor is bonded to an adhesive (Loctite (registered trademark) 3195 manufactured by Henkel).

The optical admittance at the wavelength 570 nm of the surface on the first admittance side of the obtained underlayer is Y0 = x ₀ + iy ₀ , and the optical admittance at the wavelength 570 nm of the surface on the first admittance adjustment layer side of the transparent metal film is Y 1 = x ₁ + Iy ₁ , (x ₀ , y ₀ ), (x ₁ , y ₁ ) when the optical admittance at a wavelength of 570 nm on the surface of the transparent metal film on the second admittance adjustment layer side is Y2 = x ₂ + iy ₂ Table 3 shows values of (x ₂ , y ₂ ), and equivalent admittance Y _E (x _E , y _E ). Table 3 also shows the coordinate distance (((x _E −n _env ) ² + (y _E ) ² ) ^0.5 ) between the optical admittance of the adhesive and the equivalent admittance of the transparent conductor.

Furthermore, Table 4 shows the transmittance, reflectance, absorptance, a * value and b * value in the L * a * b * color system, and surface electrical resistance of the obtained transparent conductor. In addition, FIG. 25A shows the spectral characteristics of the obtained transparent conductor, and FIG. 25B shows the admittance locus of the transparent conductor at a wavelength of 450 nm, a wavelength of 570 nm, and a wavelength of 700 nm.

(Underlayer)
Magnesium fluoride (MgF ₂ ) was vapor-deposited by electron beam (EB) at 40 mA at a film formation rate of 3 Å / s using a Gener 1300 manufactured by Optorun. The obtained underlayer was 175 nm. In addition, the refractive index of light with a wavelength of 570 nm of magnesium fluoride is 1.38.

(First admittance adjustment layer)
TiO ₂ was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 Å / s with ion assist using a Gener 1300 manufactured by Optorun. The obtained first admittance adjusting layer was 36 nm. The ion beam had a current of 500 mA, a voltage of 500 V, and an acceleration voltage of 400 V, and O ₂ gas: 50 sccm and Ar gas: 8 sccm were introduced into the ion beam apparatus. The refractive index of light with a wavelength of 570 nm of TiO ₂ is 2.35.

(Transparent metal film)
A palladium palladium (Pt 80 mass%, Pd 20 mass%) film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., thereby forming a growth nucleus having an average thickness of 0.1 nm. The average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
Subsequently, Ag was vapor-deposited by Gener 1300 (210A resistance heating) manufactured by Optorun to obtain a transparent metal film (12 nm) made of Ag. The film formation rate was 3 Å / s. The plasmon absorption rate of the obtained transparent metal film was 15% or less over a wavelength range of 400 nm to 800 nm.

(Second admittance adjustment layer)
TiO ₂ was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 Å / s under oxygen introduction using a Gener 1300 manufactured by Optorun. The obtained second admittance adjusting layer was 42 nm. As described above, the refractive index of light having a wavelength of 570 nm of TiO ₂ is 2.35.

[Example B-2]
Yamanaka Semiconductor's white substrate (Φ30 mm, thickness 2 mm) was ultrasonically cleaned in ultrapure water (Ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. An underlayer / first admittance adjusting layer / transparent metal film / second admittance adjusting layer was formed on the white plate substrate (transparent support). The obtained transparent conductor is bonded to an adhesive (Loctite (registered trademark) 3195 manufactured by Henkel).

Furthermore, Table 4 shows the transmittance, reflectance, absorptance, a * value and b * value in the L * a * b * color system, and surface electrical resistance of the obtained transparent conductor. In addition, FIG. 26A shows spectral characteristics of the obtained transparent conductor, and FIG. 26B shows admittance trajectories of the transparent conductor having a wavelength of 450 nm, a wavelength of 570 nm, and a wavelength of 700 nm.

(Underlayer)
MgF ₂ was deposited by electron beam (EB) at 40 mA at a deposition rate of 3 Å / s using a Gener 1300 manufactured by Optorun. The obtained underlayer was 90 nm. As described above, the refractive index of light with a wavelength of 570 nm of MgF ₂ is 1.38.

(First admittance adjustment layer)
TiO ₂ was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 Å / s with ion assist using a Gener 1300 manufactured by Optorun. The obtained first admittance adjusting layer was 42 nm. The ion beam had a current of 500 mA, a voltage of 500 V, and an acceleration voltage of 400 V, and O ₂ gas: 50 sccm and Ar gas: 8 sccm were introduced into the ion beam apparatus. As described above, the refractive index of light having a wavelength of 570 nm of TiO ₂ is 2.35.

(Transparent metal film)
A palladium palladium (Pt 80 mass%, Pd 20 mass%) film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., thereby forming a growth nucleus having an average thickness of 0.1 nm. The average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
Then, Ag was vapor-deposited by Gener 1300 (210A resistance heating) of Optorun, and the transparent metal film (12 nm) which consists of Ag was obtained. The film formation rate was 3 Å / s. The plasmon absorption rate of the obtained transparent metal film was 15% or less over a wavelength range of 400 nm to 800 nm.

(Second admittance adjustment layer)
TiO ₂ was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 Å / s under oxygen introduction using a Gener 1300 manufactured by Optorun. The obtained second admittance adjusting layer was 43 nm. As described above, the refractive index of light having a wavelength of 570 nm of TiO ₂ is 2.35.

[Example B-3]
Yamanaka Semiconductor's white substrate (Φ30 mm, thickness 2 mm) was ultrasonically cleaned in ultrapure water (Ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. A base layer (first base layer / second base layer / third base layer) / first admittance adjusting layer / transparent metal film / second admittance adjusting layer was formed on the white plate substrate (transparent support). The obtained transparent conductor is disposed and used in contact with air.

The optical admittance at the wavelength 570 nm of the surface on the first admittance side of the obtained underlayer is Y0 = x ₀ + iy ₀ , and the optical admittance at the wavelength 570 nm of the surface on the first admittance adjustment layer side of the transparent metal film is Y 1 = x ₁ + Iy ₁ , (x ₀ , y ₀ ), (x ₁ , y ₁ ) when the optical admittance at a wavelength of 570 nm on the surface of the transparent metal film on the second admittance adjustment layer side is Y2 = x ₂ + iy ₂ Table 3 shows values of (x ₂ , y ₂ ), and equivalent admittance Y _E (x _E , y _E ). Table 3 also shows the coordinate distance (((x _E −n _env ) ² + (y _E ) ² ) ^0.5 ) between the optical admittance of air and the equivalent admittance of the transparent conductor.

Furthermore, Table 4 shows the transmittance, reflectance, absorptance, a * value and b * value in the L * a * b * color system, and surface electrical resistance of the obtained transparent conductor. In addition, FIG. 27A shows spectral characteristics of the obtained transparent conductor, and FIG. 27B shows admittance trajectories of the transparent conductor having a wavelength of 450 nm, a wavelength of 570 nm, and a wavelength of 700 nm.

(First ground layer)
A lanthanum aluminate (M3, manufactured by Merck) was deposited by electron beam (EB) at 190 mA and a film formation rate of 10 ｓ / s using a Gener 1300 manufactured by Optorun. The obtained first underlayer was 70 nm. The refractive index of light having a wavelength of 570 nm of lanthanum aluminate (M3) is 1.77.

(Second base layer)
TiO ₂ was deposited by electron beam (EB) using Gener 1300 manufactured by Optorun under the introduction of oxygen (10 sccm) at 320 mA and a film formation rate of 3 Å / s. The obtained second underlayer was 115 nm. As described above, the refractive index of light having a wavelength of 570 nm of TiO ₂ is 2.35.

(Third underlayer)
MgF ₂ was deposited by electron beam (EB) at 40 mA at a deposition rate of 3 Å / s using a Gener 1300 manufactured by Optorun. The obtained third underlayer was 90 nm. As described above, the refractive index of light with a wavelength of 570 nm of MgF ₂ is 1.38.

(First admittance adjustment layer)
TiO ₂ was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 Å / s with ion assist using a Gener 1300 manufactured by Optorun. The obtained first admittance adjusting layer was 48 nm. The ion beam had a current of 500 mA, a voltage of 500 V, and an acceleration voltage of 400 V, and O ₂ gas: 50 sccm and Ar gas: 8 sccm were introduced into the ion beam apparatus. As described above, the refractive index of light having a wavelength of 570 nm of TiO ₂ is 2.35.

(Transparent metal film)
A palladium palladium (Pt 80 mass%, Pd 20 mass%) film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., thereby forming a growth nucleus having an average thickness of 0.1 nm. The average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
Subsequently, Ag was vapor-deposited by Gener 1300 (210A resistance heating) manufactured by Optorun to obtain a transparent metal film (15 nm) made of Ag. The film formation rate was 3 Å / s. The plasmon absorption rate of the obtained transparent metal film was 15% or less over a wavelength range of 400 nm to 800 nm.

[Example B-4]
An underlayer / first admittance adjusting layer / transparent metal film / second admittance adjusting layer / third admittance adjusting layer was formed on a transparent support made of PET (Cosmo Shine A4300 thickness 50 μm) manufactured by Toyobo Co., Ltd. The obtained transparent conductor is disposed and used in contact with air.

Furthermore, Table 4 shows the transmittance, reflectance, absorptance, a * value and b * value in the L * a * b * color system, and surface electrical resistance of the obtained transparent conductor. Moreover, the spectral characteristic of the obtained transparent conductor is shown in FIG. 28A, and the admittance locus of the wavelength 570 nm of the transparent conductor is shown in FIG. 28B.

(Underlayer)
MgF ₂ was deposited by electron beam (EB) at 190 mA and a deposition rate of 10 Å / s using a Gener 1300 manufactured by Optorun. The obtained underlayer was 90 nm. As described above, the refractive index of light with a wavelength of 570 nm of MgF ₂ is 1.38.

(First admittance adjustment layer)
TiO ₂ was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 Å / s with ion assist using a Gener 1300 manufactured by Optorun. The obtained first admittance adjusting layer was 34 nm. The ion beam had a current of 500 mA, a voltage of 500 V, and an acceleration voltage of 400 V, and O ₂ gas: 50 sccm and Ar gas: 8 sccm were introduced into the ion beam apparatus. As described above, the refractive index of light having a wavelength of 570 nm of TiO ₂ is 2.35.

(Second admittance adjustment layer)
TiO ₂ was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 Å / s under oxygen introduction using a Gener 1300 manufactured by Optorun. The obtained second admittance adjusting layer was 22 nm. As described above, the refractive index of light having a wavelength of 570 nm of TiO ₂ is 2.35.

(Third admittance adjustment layer)
SiO ₂ was deposited by electron beam (EB) at 60 mA and a film formation rate of 10 Å / s using a Gener 1300 manufactured by Optorun. The obtained third admittance adjusting layer was 54 nm. The refractive index of light having a wavelength of 570 nm of SiO ₂ is 1.46.

[Example B-5]
An underlayer / first admittance adjusting layer / transparent metal film / second admittance adjusting layer was formed on a transparent support material made of Toyobo PET (Cosmo Shine A4300, thickness 50 μm). The obtained transparent conductor is bonded to an adhesive (8146-1 from 3M).

Furthermore, Table 4 shows the transmittance, reflectance, absorptance, a * value and b * value in the L * a * b * color system, and surface electrical resistance of the obtained transparent conductor. Further, FIG. 29A shows the spectral characteristics of the obtained transparent conductor, and FIG. 29B shows the admittance locus of the transparent conductor at a wavelength of 570 nm.

(First admittance adjustment layer)
TiO ₂ was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 Å / s with ion assist using a Gener 1300 manufactured by Optorun. The obtained first admittance adjusting layer was 37 nm. The ion beam had a current of 500 mA, a voltage of 500 V, and an acceleration voltage of 400 V, and O ₂ gas: 50 sccm and Ar gas: 8 sccm were introduced into the ion beam apparatus. As described above, the refractive index of light having a wavelength of 570 nm of TiO ₂ is 2.35.

(Transparent metal film)
A palladium palladium (Pt 80 mass%, Pd 20 mass%) film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., thereby forming a growth nucleus having an average thickness of 0.1 nm. The average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
Then, Ag was vapor-deposited by Gener 1300 (210A resistance heating) of Optorun, and the transparent metal film (10.5 nm) which consists of Ag was obtained. The film formation rate was 3 Å / s. The plasmon absorption rate of the obtained transparent metal film was 15% or less over a wavelength range of 400 nm to 800 nm.

(Second admittance adjustment layer)
TiO ₂ was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 Å / s under oxygen introduction using a Gener 1300 manufactured by Optorun. The obtained second admittance adjusting layer was 39 nm. As described above, the refractive index of light having a wavelength of 570 nm of TiO ₂ is 2.35.

[Example B-6]
Yamanaka Semiconductor's white substrate (Φ30 mm, thickness 2 mm) was ultrasonically cleaned in ultrapure water (Ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. An underlayer / first admittance adjusting layer / transparent metal film / second admittance adjusting layer was formed on the white plate substrate (transparent support). The obtained transparent conductor is bonded to an adhesive (Loctite (registered trademark) 3195 manufactured by Henkel).

Furthermore, Table 4 shows the transmittance, reflectance, absorptance, a * value and b * value in the L * a * b * color system, and surface electrical resistance of the obtained transparent conductor. Further, FIG. 30A shows the spectral characteristics of the obtained transparent conductor, and FIG. 30B shows the admittance trajectories of the transparent conductor at a wavelength of 450 nm, a wavelength of 570 nm, and a wavelength of 700 nm.

(Underlayer)
MgF ₂ was deposited by electron beam (EB) at 40 mA at a deposition rate of 3 Å / s using a Gener 1300 manufactured by Optorun. The obtained underlayer was 175 nm. As described above, the refractive index of light with a wavelength of 570 nm of MgF ₂ is 1.38.

(First admittance adjustment layer)
Nb ₂ O ₅ was RF-sputtered using Arnelva L-430S-FHS at Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 0.74 Å / s. The target-substrate distance was 86 mm. The obtained first admittance adjusting layer was 36 nm. The refractive index of light having a wavelength of 570 nm of Nb ₂ O ₅ is 2.31.

(Transparent metal film)
A palladium palladium (Pt 80 mass%, Pd 20 mass%) film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., thereby forming a growth nucleus having an average thickness of 0.1 nm. The average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
Subsequently, Ag was DC sputtered using L-430S-FHS manufactured by Anerva Co., Ar20 sccm, sputtering pressure 0.3 Pa, room temperature, target side power 125 W, and deposition rate 10 L / s. The target-substrate distance was 86 mm. The obtained transparent metal film was 12 nm. Further, the plasmon absorption rate of the obtained transparent metal film was 15% or less over a wavelength range of 400 nm to 800 nm.

(Second admittance adjustment layer)
Nb ₂ O ₅ was RF-sputtered using Arnelva L-430S-FHS at Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 0.74 Å / s. The target-substrate distance was 86 mm. The obtained second admittance adjusting layer was 38 nm. As described above, the refractive index of light having a wavelength of 570 nm of Nb ₂ O ₅ is 2.31.

[Example B-7]
An underlayer / first admittance adjusting layer / transparent metal film / second admittance adjusting layer was formed on a Konica Minolta TAC film (transparent support). The obtained transparent conductor is bonded to an adhesive (8146-1, manufactured by 3M).

Furthermore, Table 4 shows the transmittance, reflectance, absorptance, a * value and b * value in the L * a * b * color system, and surface electrical resistance of the obtained transparent conductor. Furthermore, the admittance locus | trajectory of wavelength 450nm, wavelength 570nm, and wavelength 700nm of the obtained transparent conductor is shown in FIG.

(First admittance adjustment layer)
Using Anelva L-430S-FHS, ITO was RF-sputtered at Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 2.2 L / s. The target-substrate distance was 86 mm. The obtained first admittance adjusting layer was 41 nm. The refractive index of light with a wavelength of 570 nm of ITO is 2.12.

(Transparent metal film)
A palladium palladium (Pt 80 mass%, Pd 20 mass%) film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., thereby forming a growth nucleus having an average thickness of 0.1 nm. The average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
Subsequently, Ag was DC sputtered using L-430S-FHS manufactured by Anerva Co., Ar20 sccm, sputtering pressure 0.3 Pa, room temperature, target side power 125 W, and deposition rate 10 L / s. The target-substrate distance was 86 mm. The obtained transparent metal film was 8 nm. Further, the plasmon absorption rate of the obtained transparent metal film was 15% or less over a wavelength range of 400 nm to 800 nm.

(Second admittance adjustment layer)
Using Anelva L-430S-FHS, ITO was RF-sputtered at Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 2.2 L / s. The target-substrate distance was 86 mm. The obtained second admittance adjusting layer was 29 nm. As described above, the refractive index of light having a wavelength of 570 nm of ITO is 2.12.

[Example B-8]
An underlayer / first admittance adjusting layer / transparent metal film / second admittance adjusting layer was formed on a Konica Minolta TAC film (transparent support). The obtained transparent conductor is bonded to an adhesive (Loctite (registered trademark) 3195 manufactured by Henkel).

Furthermore, Table 4 shows the transmittance, reflectance, absorptance, a * value and b * value in the L * a * b * color system, and surface electrical resistance of the obtained transparent conductor. Further, FIG. 32 shows admittance loci of the obtained transparent conductor with a wavelength of 450 nm, a wavelength of 570 nm, and a wavelength of 700 nm.

(Underlayer)
MgF ₂ was deposited by electron beam (EB) at 40 mA at a deposition rate of 3 Å / s using a Gener 1300 manufactured by Optorun. The obtained underlayer was 100 nm. As described above, the refractive index of light with a wavelength of 570 nm of MgF ₂ is 1.38.

(First admittance adjustment layer)
ZnO was RF sputtered using L-430S-FHS manufactured by Anerva Co., Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target side power 300 W, and deposition rate 1.6 Å / s. The target-substrate distance was 86 mm. The obtained first admittance adjusting layer was 50 nm. The refractive index of light with a wavelength of 570 nm of ZnO was 2.01.

(Transparent metal film)
A palladium palladium (Pt 80 mass%, Pd 20 mass%) film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., thereby forming a growth nucleus having an average thickness of 0.1 nm. The average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
Subsequently, Ag was DC sputtered using L-430S-FHS manufactured by Anerva Co., Ar20 sccm, sputtering pressure 0.3 Pa, room temperature, target side power 125 W, and deposition rate 10 L / s. The target-substrate distance was 86 mm. The obtained transparent metal film was 9 nm. Further, the plasmon absorption rate of the obtained transparent metal film was 15% or less over a wavelength range of 400 nm to 800 nm.

(Second admittance adjustment layer)
ZnO was RF sputtered using L-430S-FHS manufactured by Anerva Co., Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target side power 300 W, and deposition rate 1.6 Å / s. The target-substrate distance was 86 mm. The obtained second admittance adjusting layer was 22 nm. As described above, the refractive index of light having a wavelength of 570 nm of ZnO is 2.01.

[Comparative Example B-1]
Yamanaka Semiconductor's white substrate (Φ30 mm, thickness 2 mm) was ultrasonically cleaned in ultrapure water (Ultrapure water device Synergy UV manufactured by Millipore). As a sonic cleaning machine, VS-100III manufactured by ASONE was used. Only a transparent metal film was formed on the white plate substrate (transparent support material).

Table 4 shows the transmittance, reflectance, absorptance, a * value and b * value in the L * a * b * color system, and surface electrical resistance of the transparent conductor obtained.

(Transparent metal film)
A silver nanowire aqueous dispersion similar to Example 2 of Patent Document 2 described above was spin-coated on the transparent support and baked at 120 ° C. for 20 minutes. The coater used was 1K-DX manufactured by MIKASA, and the thermostat used was ST-120 manufactured by ESPEC.

[Comparative Example B-2]
With reference to Non-Patent Document 1 described above, a first admittance adjusting layer / transparent metal film / second admittance adjusting layer was formed on a transparent support made of Toyobo PET (Cosmo Shine A4300 thickness 50 μm). The obtained transparent conductor is disposed and used in contact with air.

The resulting optical admittance Y1 = x 1 + _iy 1 wavelength 570nm of the first admittance adjusting layer-side surface of the transparent metal _film, the optical admittance of wavelength 570nm of the second admittance adjusting layer side surface of the transparent metal film Table 3 shows the values of (x ₁ , y ₁ ) and (x ₂ , y ₂ ), and equivalent admittance Y _E (x _E , y _E ), where Y 2 = x ₂ + iy ₂ . Table 3 also shows the coordinate distance (((x _E −n _env ) ² + (y _E ) ² ) ^0.5 ) between the optical admittance of air and the equivalent admittance of the transparent conductor.

Furthermore, Table 4 shows the transmittance, reflectance, absorptance, a * value and b * value in the L * a * b * color system, and surface electrical resistance of the obtained transparent conductor. In addition, FIG. 33A shows spectral characteristics of the obtained transparent conductor, and FIG. 33B shows admittance trajectories of the transparent conductor having a wavelength of 450 nm, a wavelength of 570 nm, and a wavelength of 700 nm.

(First admittance adjustment layer)
Nb ₂ O ₅ was RF-sputtered using Arnelva L-430S-FHS at Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 0.74 Å / s. The target-substrate distance was 86 mm. The obtained first admittance adjusting layer was 27.7 nm. As described above, the refractive index of light having a wavelength of 570 nm of Nb ₂ O ₅ is 2.31.

(Transparent metal film)
DC sputtering was performed with a small sputtering apparatus (BC4279) manufactured by Nippon Vacuum Technology Co., Ltd. At this time, the target side power was set to 200 W. The film thickness of the obtained transparent metal film was 8 nm.

(Second admittance adjustment layer)
Using an Anelva L-430S-FHS, IZO was RF sputtered at Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 2.2 L / s. The target-substrate distance was 86 mm. The obtained second admittance adjusting layer was 36 nm. The refractive index of light having a wavelength of 570 nm of IZO is 2.05.

As shown in Table 4, in the transparent conductor having the structure of transparent support material / underlayer / first admittance adjusting layer / transparent metal film / second admittance adjusting layer, the average reflectance of the transparent conductor at a wavelength of 500 nm to 700 nm Was 6% or less, and was relatively small (Examples B-1 to B-4 and B-6 to B-8). By having the underlayer, as shown in Table 3, the optical admittances Y1 (x ₁ , x ₂ ) and Y2 (x ₂ , x ₂ ) on both surfaces of the transparent metal film are increased, and the electric field of the transparent metal film It is inferred that the loss has been reduced.

In the transparent conductor having the structure of transparent support material / underlayer / first admittance adjusting layer / transparent metal film / second admittance adjusting layer, for example, as shown in FIGS. 25 to 28 and FIGS. The admittance locus of light having a wavelength of 450 nm, a wavelength of 570 nm, and a wavelength of 700 nm tends to be line symmetric around the horizontal axis, and y ₁ + y ₂ was also less than 0.8. Therefore, both the equivalent admittance _{Y E} approached _{n env.} Furthermore, since there is less variation in the equivalent admittance Y _E of each wavelength, smaller absorption maximum at a wavelength of 450 nm ~ 800 nm, was high transmittance at any wavelength region. However, in Example B-5, as shown in FIG. 29B, the admittance was not sufficiently symmetric about the horizontal axis, and y ₁ + y ₂ was 0.8 or more. Therefore, as shown in FIG. 29A, there is a region where the reflection suppressing effect is not sufficient in the wavelength range of 400 nm to 800 nm.

On the other hand, in Comparative Example B-1 in which silver nanowires were formed, the surface electrical resistance was high and the haze degradation was large. Further, as shown in FIG. 33A, in Comparative Example B-2 in which no underlayer was formed, the reflectance was about 10% in any wavelength region, and the average absorptance was also close to 10%.

[Example C-1]
Yamanaka Semiconductor's white substrate (Φ30 mm, thickness 2 mm) was ultrasonically cleaned in ultrapure water (Ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. The first admittance adjusting layer / low refractive index layer A / transparent metal film / low refractive index layer B / second admittance adjusting layer / third admittance adjusting layer are formed on the white plate substrate (transparent support material) by the following method. A film was formed.
FIG. 9A shows the spectral characteristics of the obtained transparent conductor, and FIG. 9B shows the admittance locus of the transparent conductor at a wavelength of 570 nm.

(First admittance adjustment layer)
On the transparent support described above, TiO ₂ was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 Å / s while ion assisting using a Gener 1300 manufactured by Optorun. The obtained first admittance adjusting layer was 29 nm. The ion beam had a current of 500 mA, a voltage of 500 V, and an acceleration voltage of 400 V, and O ₂ gas: 50 sccm and Ar gas: 8 sccm were introduced into the ion beam apparatus. The refractive index of light having a wavelength of 570 nm of TiO ₂ was 2.35, and the refractive index of light having a wavelength of 570 nm of the first admittance adjusting layer was 2.35.

(Low refractive index layer A)
SiO ₂ was deposited by electron beam (EB) at 60 mA and a film formation rate of 10 Å / s using a Gener 1300 manufactured by Optorun. The obtained low refractive index layer A was 5 nm. The refractive index of light with a wavelength of 570 nm of SiO ₂ was 1.46, and the refractive index of light with a wavelength of 570 nm of the low refractive index layer A was 1.46.

(Transparent metal film)
A palladium palladium (Pt 80 mass%, Pd 20 mass%) film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., thereby forming a growth nucleus having an average thickness of 0.1 nm. The average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
Then, Ag was vapor-deposited by Gener 1300 (210A resistance heating) of Optorun, and the transparent metal film (10 nm) which consists of Ag was obtained. The film formation rate was 3 Å / s. The plasmon absorption rate of the obtained transparent metal film was 10% or less over a wavelength range of 400 nm to 800 nm.

(Low refractive index layer B)
SiO ₂ was deposited by electron beam (EB) at 60 mA and a film formation rate of 10 Å / s using a Gener 1300 manufactured by Optorun. The obtained low refractive index layer B was 5 nm. The refractive index of light with a wavelength of 570 nm of SiO ₂ was 1.46, and the refractive index of light with a wavelength of 570 nm of the low refractive index layer B was 1.46.

(Second admittance adjustment layer)
TiO ₂ was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 Å / s under oxygen introduction using a Gener 1300 manufactured by Optorun. The obtained second admittance adjusting layer was 24 nm. The refractive index of light with a wavelength of 570 nm of TiO ₂ was 2.35, and the refractive index of the second admittance adjusting layer was 2.35.

(Third admittance adjustment layer)
SiO ₂ was deposited by electron beam (EB) at 60 mA and a film formation rate of 10 Å / s using a Gener 1300 manufactured by Optorun. The obtained admittance adjusting layer was 25 nm. The refractive index of light having a wavelength of 570 nm of SiO ₂ was 1.46, and the refractive index of the third admittance adjusting layer was 1.46.

[Example C-2]
A first admittance adjusting layer / low refractive index layer A / transparent metal film / low refractive index layer B / second admittance adjusting layer was formed on a Konica Minolta TAC film (transparent support) by the following method. The spectral characteristic of the obtained transparent conductor is shown in FIG. 34A, and the admittance locus of the transparent conductor at a wavelength of 570 nm is shown in FIG. 34B.

(First admittance adjustment layer)
Nb ₂ O ₅ was RF-sputtered using Arnelva L-430S-FHS at Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 0.74 Å / s. The target-substrate distance was 86 mm. The obtained first admittance adjusting layer was 23 nm. The refractive index of light having a wavelength of 570 nm of Nb ₂ O ₅ was 2.31, and the refractive index of light having a wavelength of 570 nm of the first admittance adjusting layer was 2.31.

(Low refractive index layer A)
Using Anelva L-430S-FHS, SiO ₂ was RF-sputtered at Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 2 Å / s. The target-substrate distance was 86 mm. The obtained low refractive index layer A was 10 nm. The refractive index of light with a wavelength of 570 nm of SiO ₂ was 1.46, and the refractive index of light with a wavelength of 570 nm of the low refractive index layer A was 1.46.

(Transparent metal film)
A palladium palladium (Pt 80 mass%, Pd 20 mass%) film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., thereby forming a growth nucleus having an average thickness of 0.1 nm. The average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
Subsequently, Ag was RF-sputtered by using L-430S-FHS manufactured by Anerva Co., Ar 20 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 100 W, and deposition rate 2.5 Å / s. The target-substrate distance was 86 mm. The obtained transparent metal film (11 nm) made of Ag had a plasmon absorption rate of 10% or less over a wavelength range of 400 nm to 800 nm.

(Low refractive index layer B)
Using Anelva L-430S-FHS, SiO ₂ was RF-sputtered at Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 2 Å / s. The target-substrate distance was 86 mm. The obtained low refractive index layer B was 10 nm. The refractive index of light with a wavelength of 570 nm of SiO ₂ was 1.46, and the refractive index of light with a wavelength of 570 nm of the low refractive index layer B was 1.46.

(Second admittance adjustment layer)
Nb ₂ O ₅ was RF-sputtered using Arnelva L-430S-FHS at Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 0.74 Å / s. The target-substrate distance was 86 mm. The obtained second admittance adjusting layer was 23 nm. The refractive index of light with a wavelength of 570 nm of Nb ₂ O ₅ was 2.31, and the refractive index of light with a wavelength of 570 nm of the second admittance adjusting layer was 2.31.

[Example C-3]
Yamanaka Semiconductor's white substrate (Φ30 mm, thickness 2 mm) was ultrasonically cleaned in ultrapure water (Ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. The first admittance adjusting layer / low refractive index layer A / transparent metal film / low refractive index layer B / second admittance adjusting layer / third admittance adjusting layer are formed on the white plate substrate (transparent support material) by the following method. A film was formed. FIG. 35A shows the spectral characteristics of the obtained transparent conductor, and FIG. 35B shows the admittance locus of the transparent conductor at a wavelength of 570 nm.

(First admittance adjustment layer)
TiO ₂ was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 Å / s with ion assist using a Gener 1300 manufactured by Optorun. The obtained first admittance adjusting layer was 35 nm. The ion beam had a current of 500 mA, a voltage of 500 V, and an acceleration voltage of 400 V, and O ₂ gas: 50 sccm and Ar gas: 8 sccm were introduced into the ion beam apparatus. The refractive index of light with a wavelength of 570 nm of TiO ₂ was 2.35, and the refractive index of light with a wavelength of 570 nm of the first admittance adjustment layer was 2.31.

(Low refractive index layer A)
MgF ₂ was deposited by electron beam (EB) at 190 mA and a deposition rate of 10 Å / s using a Gener 1300 manufactured by Optorun. The obtained low refractive index layer A was 5 nm. The refractive index of light with a wavelength of 570 nm of MgF ₂ was 1.38, and the refractive index of light with a wavelength of 570 nm of the low refractive index layer A was 1.38.

(Low refractive index layer B)
MgF ₂ was deposited by electron beam (EB) at 190 mA and a deposition rate of 10 Å / s using a Gener 1300 manufactured by Optorun. The obtained low refractive index layer B was 5 nm. The refractive index of light with a wavelength of 570 nm of MgF ₂ was 1.38, and the refractive index of light with a wavelength of 570 nm of the low refractive index layer B was 1.38.

(Second admittance adjustment layer)
TiO ₂ was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 Å / s with ion assist using a Gener 1300 manufactured by Optorun. The obtained second admittance adjusting layer was 24 nm. The ion beam had a current of 500 mA, a voltage of 500 V, and an acceleration voltage of 400 V, and O ₂ gas: 50 sccm and Ar gas: 8 sccm were introduced into the ion beam apparatus. The refractive index of light having a wavelength of 570 nm of TiO ₂ was 2.35, and the refractive index of light having a wavelength of 570 nm of the second admittance adjusting layer was 2.35.

(Third admittance adjustment layer)
SiO ₂ was deposited by electron beam (EB) at 60 mA and a film formation rate of 10 Å / s using a Gener 1300 manufactured by Optorun. The obtained admittance adjusting layer was 25 nm. The refractive index of light with a wavelength of 570 nm of SiO ₂ was 1.46, and the refractive index of light with a wavelength of 570 nm of the third admittance adjustment layer was 1.46.

[Example C-4] A first admittance adjusting layer / low refractive index layer A / transparent metal film / low refractive index layer on a transparent support material made of Toyobo PET (Cosmo Shine A4300, thickness 50 μm) by the following method A B / second admittance adjusting layer was formed. The spectral characteristics of the obtained transparent conductor are shown in FIG. 36A, and the admittance locus of the transparent conductor at a wavelength of 570 nm is shown in FIG. 36B.

(First admittance adjustment layer)
Nb ₂ O ₅ was RF-sputtered using Arnelva L-430S-FHS at Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 0.74 Å / s. The target-substrate distance was 86 mm. The obtained first admittance adjusting layer was 25 nm. The refractive index of light having a wavelength of 570 nm of Nb ₂ O ₅ was 2.31, and the refractive index of light having a wavelength of 570 nm of the first admittance adjusting layer was 2.31.

(Transparent metal film)
A palladium palladium (Pt 80 mass%, Pd 20 mass%) film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., thereby forming a growth nucleus having an average thickness of 0.1 nm. The average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
Subsequently, Ag was RF-sputtered by using L-430S-FHS manufactured by Anerva Co., Ar 20 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 100 W, and deposition rate 2.5 Å / s. The target-substrate distance was 86 mm. The obtained transparent metal film (10 nm) made of Ag had a plasmon absorption rate of 10% or less over a wavelength range of 400 nm to 800 nm.

(Second admittance adjustment layer)
Nb ₂ O ₅ was RF-sputtered using Arnelva L-430S-FHS at Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 0.74 Å / s. The target-substrate distance was 86 mm. The obtained second admittance adjusting layer was 26 nm. The refractive index of light with a wavelength of 570 nm of Nb ₂ O ₅ was 2.31, and the refractive index of light with a wavelength of 570 nm of the second admittance adjusting layer was 2.31.

[Example C-5]
Corning non-alkali glass substrate (EAGLE XG (thickness 7 mm × length 30 mm × width 30 mm)) was ultrasonically cleaned in ultrapure water (an ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. A first admittance adjusting layer / low refractive index layer A / transparent metal film / low refractive index layer B / second admittance adjusting layer / third admittance adjusting layer is formed on the glass substrate (transparent support material) by the following method. A film was formed. The spectral characteristic of the obtained transparent conductor is shown in FIG. 37A, and the admittance locus of the transparent conductor at a wavelength of 570 nm is shown in FIG. 37B.

(First admittance adjustment layer)
On the transparent support described above, TiO ₂ was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 Å / s while ion assisting using a Gener 1300 manufactured by Optorun. The obtained first admittance adjusting layer was 28 nm. The ion beam had a current of 500 mA, a voltage of 500 V, and an acceleration voltage of 400 V, and O ₂ gas: 50 sccm and Ar gas: 8 sccm were introduced into the ion beam apparatus. The refractive index of light having a wavelength of 570 nm of TiO ₂ was 2.35, and the refractive index of light having a wavelength of 570 nm of the first admittance adjusting layer was 2.35.

(Low refractive index layer A)
SiO ₂ was deposited by electron beam (EB) at 60 mA and a film formation rate of 10 Å / s using a Gener 1300 manufactured by Optorun. The obtained low refractive index layer A was 15 nm. The refractive index of light with a wavelength of 570 nm of SiO ₂ was 1.46, and the refractive index of light with a wavelength of 570 nm of the low refractive index layer A was 1.46.

(Low refractive index layer B)
SiO ₂ was deposited by electron beam (EB) at 60 mA and a film formation rate of 10 Å / s using a Gener 1300 manufactured by Optorun. The obtained low refractive index layer B was 10 nm. The refractive index of light with a wavelength of 570 nm of SiO ₂ was 1.46, and the refractive index of light with a wavelength of 570 nm of the low refractive index layer B was 1.46.

(Second admittance adjustment layer)
TiO ₂ was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 Å / s under oxygen introduction using a Gener 1300 manufactured by Optorun. The obtained second admittance adjusting layer was 29 nm. The refractive index of light having a wavelength of 570 nm of TiO ₂ was 2.35, and the refractive index of light having a wavelength of 570 nm of the second admittance adjusting layer was 2.35.

(Third admittance adjustment layer)
SiO ₂ was deposited by electron beam (EB) at 60 mA and a film formation rate of 10 Å / s using a Gener 1300 manufactured by Optorun. The obtained admittance adjusting layer was 15 nm. The refractive index of light with a wavelength of 570 nm of SiO ₂ was 1.46, and the refractive index of light with a wavelength of 570 nm of the third admittance adjustment layer was 1.46.

[Example C-6]
Corning non-alkali glass substrate (EAGLE XG (thickness 7 mm × length 30 mm × width 30 mm)) was ultrasonically cleaned in ultrapure water (an ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. A first admittance adjusting layer / transparent metal film / low refractive index layer B / second admittance adjusting layer / third admittance adjusting layer was formed on the glass substrate (transparent support) by the following method. The spectral characteristic of the obtained transparent conductor is shown in FIG. 38A, and the admittance locus of the transparent conductor at a wavelength of 570 nm is shown in FIG. 38B.

(First admittance adjustment layer)
Nb ₂ O ₅ was RF-sputtered using Arnelva L-430S-FHS at Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 0.74 Å / s. The target-substrate distance was 86 mm. The obtained first admittance adjusting layer was 29 nm. The refractive index of light having a wavelength of 570 nm of Nb ₂ O ₅ was 2.31, and the refractive index of light having a wavelength of 570 nm of the first admittance adjusting layer was 2.31.

(Low refractive index layer B)
Using Anelva L-430S-FHS, SiO ₂ was RF-sputtered at Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 2 Å / s. The target-substrate distance was 86 mm. The obtained low refractive index layer B was 5 nm. The refractive index of light with a wavelength of 570 nm of SiO ₂ was 1.46, and the refractive index of light with a wavelength of 570 nm of the low refractive index layer B was 1.46.

(Second admittance adjustment layer)
Nb ₂ O ₅ was RF-sputtered using Arnelva L-430S-FHS at Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 0.74 Å / s. The target-substrate distance was 86 mm. The obtained second admittance adjusting layer was 24 nm. The refractive index of light with a wavelength of 570 nm of Nb ₂ O ₅ was 2.31, and the refractive index of light with a wavelength of 570 nm of the second admittance adjusting layer was 2.31.

(Third admittance adjustment layer)
Using Anelva L-430S-FHS, SiO ₂ was RF-sputtered at Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 2 Å / s. The target-substrate distance was 86 mm. The obtained third admittance adjusting layer was 25 nm. The refractive index of light with a wavelength of 570 nm of SiO ₂ was 1.46, and the refractive index of light with a wavelength of 570 nm of the third admittance adjustment layer was 1.46.

[Example C-7]
Corning non-alkali glass substrate (EAGLE XG (thickness 7 mm × length 30 mm × width 30 mm)) was ultrasonically cleaned in ultrapure water (an ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. A first admittance adjusting layer / low refractive index layer A / transparent metal film / low refractive index layer B / second admittance adjusting layer / third admittance adjusting layer is formed on the glass substrate (transparent support material) by the following method. A film was formed. The spectral characteristic of the obtained transparent conductor is shown in FIG. 39A, and the admittance locus of the transparent conductor at a wavelength of 570 nm is shown in FIG. 39B.

(First admittance adjustment layer)
TiO ₂ was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 Å / s with ion assist using a Gener 1300 manufactured by Optorun. The obtained first admittance adjusting layer was 38 nm. The ion beam had a current of 500 mA, a voltage of 500 V, and an acceleration voltage of 400 V, and O ₂ gas: 50 sccm and Ar gas: 8 sccm were introduced into the ion beam apparatus. The refractive index of light having a wavelength of 570 nm of TiO ₂ was 2.35, and the refractive index of light having a wavelength of 570 nm of the first admittance adjusting layer was 2.35.

(Low refractive index layer A)
MgF ₂ was deposited by electron beam (EB) at 190 mA and a deposition rate of 10 Å / s using a Gener 1300 manufactured by Optorun. The obtained low refractive index layer A was 3 nm. The refractive index of light with a wavelength of 570 nm of MgF ₂ was 1.38, and the refractive index of light with a wavelength of 570 nm of the low refractive index layer A was 1.38.

(Second admittance adjustment layer)
TiO ₂ was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 Å / s with ion assist using a Gener 1300 manufactured by Optorun. The obtained second admittance adjusting layer was 27 nm. The ion beam had a current of 500 mA, a voltage of 500 V, and an acceleration voltage of 400 V, and O ₂ gas: 50 sccm and Ar gas: 8 sccm were introduced into the ion beam apparatus. The refractive index of light having a wavelength of 570 nm of TiO ₂ was 2.35, and the refractive index of light having a wavelength of 570 nm of the second admittance adjusting layer was 2.35.

[Example C-8]
Corning non-alkali glass substrate (EAGLE XG (thickness 7 mm × length 30 mm × width 30 mm)) was ultrasonically cleaned in ultrapure water (an ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. A first admittance adjusting layer / low refractive index layer A / transparent metal film / low refractive index layer B / second admittance adjusting layer / third admittance adjusting layer is formed on the glass substrate (transparent support material) by the following method. A film was formed. The spectral characteristic of the obtained transparent conductor is shown in FIG. 40A, and the admittance locus of the transparent conductor at a wavelength of 570 nm is shown in FIG. 40B.

(First admittance adjustment layer)
Nb ₂ O ₅ was RF-sputtered using Arnelva L-430S-FHS at Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 0.74 Å / s. The target-substrate distance was 86 mm. The obtained first admittance adjusting layer was 36 nm. The refractive index of light having a wavelength of 570 nm of Nb ₂ O ₅ was 2.31, and the refractive index of light having a wavelength of 570 nm of the first admittance adjusting layer was 2.31.

(Low refractive index layer A)
Using Anelva L-430S-FHS, SiO ₂ was RF-sputtered at Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 2 Å / s. The target-substrate distance was 86 mm. The obtained low refractive index layer A was 6 nm. The refractive index of light with a wavelength of 570 nm of SiO ₂ was 1.46, and the refractive index of light with a wavelength of 570 nm of the low refractive index layer A was 1.46.

(Transparent metal film)
A palladium palladium (Pt 80 mass%, Pd 20 mass%) film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., thereby forming a growth nucleus having an average thickness of 0.1 nm. The average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
Subsequently, Ag was RF-sputtered by using L-430S-FHS manufactured by Anerva Co., Ar 20 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 100 W, and deposition rate 2.5 Å / s. The target-substrate distance was 86 mm. The obtained transparent metal film (9 nm) made of Ag had a plasmon absorption rate of 10% or less over a wavelength range of 400 nm to 800 nm.

(Second admittance adjustment layer)
Nb ₂ O ₅ was RF-sputtered using Arnelva L-430S-FHS at Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 0.74 Å / s. The target-substrate distance was 86 mm. The obtained second admittance adjusting layer was 30 nm. The refractive index of light with a wavelength of 570 nm of Nb ₂ O ₅ was 2.31, and the refractive index of light with a wavelength of 570 nm of the second admittance adjusting layer was 2.31.

(Third admittance adjustment layer)
Using Anelva L-430S-FHS, SiO ₂ was RF-sputtered at Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 2 Å / s. The target-substrate distance was 86 mm. The obtained third admittance adjusting layer was 34 nm. The refractive index of light with a wavelength of 570 nm of SiO ₂ was 1.46, and the refractive index of light with a wavelength of 570 nm of the third admittance adjustment layer was 1.46.

[Example C-9]
Corning non-alkali glass substrate (EAGLE XG (thickness 7 mm × length 30 mm × width 30 mm)) was ultrasonically cleaned in ultrapure water (an ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. A first admittance adjusting layer / low refractive index layer A / transparent metal film / second admittance adjusting layer / third admittance adjusting layer was formed on the glass substrate (transparent support) by the following method. The spectral characteristics of the obtained transparent conductor are shown in FIG. 41A, and the admittance locus of the transparent conductor at a wavelength of 570 nm is shown in FIG. 41B.

(First admittance adjustment layer)
TiO ₂ was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 Å / s with ion assist using a Gener 1300 manufactured by Optorun. The obtained first admittance adjusting layer was 34 nm. The ion beam had a current of 500 mA, a voltage of 500 V, and an acceleration voltage of 400 V, and O ₂ gas: 50 sccm and Ar gas: 8 sccm were introduced into the ion beam apparatus. The refractive index of light having a wavelength of 570 nm of TiO ₂ was 2.35, and the refractive index of light having a wavelength of 570 nm of the first admittance adjusting layer was 2.35.

(Low refractive index layer A)
A lanthanum aluminate (M3, manufactured by Merck) was deposited by electron beam (EB) at 190 mA and a film formation rate of 10 ｓ / s using a Gener 1300 manufactured by Optorun. The obtained low refractive index layer A was 3 nm. The refractive index of the light of wavelength 570 nm of lanthanum aluminate (M3) was 1.77, and the refractive index of the light of wavelength 570 nm of the low refractive index layer A was 1.77.

(Transparent metal film)
A palladium palladium (Pt 80 mass%, Pd 20 mass%) film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., thereby forming a growth nucleus having an average thickness of 0.1 nm. The average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
Then, Ag was vapor-deposited by Gener 1300 (210A resistance heating) of Optorun, and the transparent metal film (9 nm) which consists of Ag was obtained. The film formation rate was 3 Å / s. The plasmon absorption rate of the obtained transparent metal film was 10% or less over a wavelength range of 400 nm to 800 nm.

(Second admittance adjustment layer)
TiO ₂ was deposited by electron beam (EB) at 320 mA and a film formation rate of 3 Å / s with ion assist using a Gener 1300 manufactured by Optorun. The obtained second admittance adjusting layer was 33 nm. The ion beam had a current of 500 mA, a voltage of 500 V, and an acceleration voltage of 400 V, and O ₂ gas: 50 sccm and Ar gas: 8 sccm were introduced into the ion beam apparatus. The refractive index of light having a wavelength of 570 nm of TiO ₂ was 2.35, and the refractive index of light having a wavelength of 570 nm of the second admittance adjusting layer was 2.35.

(Third admittance adjustment layer)
SiO ₂ was deposited by electron beam (EB) at 60 mA and a film formation rate of 10 Å / s using a Gener 1300 manufactured by Optorun. The obtained admittance adjusting layer was 45 nm. The refractive index of light with a wavelength of 570 nm of SiO ₂ was 1.46, and the refractive index of light with a wavelength of 570 nm of the third admittance adjustment layer was 1.46.

[Example C-10]
Corning non-alkali glass substrate (EAGLE XG (thickness 7 mm × length 30 mm × width 30 mm)) was ultrasonically cleaned in ultrapure water (an ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. A first admittance adjusting layer / transparent metal film / low refractive index layer B / second admittance adjusting layer / third admittance adjusting layer was formed on the glass substrate (transparent support) by the following method. FIG. 42A shows the spectral characteristics of the obtained transparent conductor, and FIG. 42B shows the admittance locus of the transparent conductor at a wavelength of 570 nm.

(First admittance adjustment layer)
Nb ₂ O ₅ was RF-sputtered using Arnelva L-430S-FHS at Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 0.74 Å / s. The target-substrate distance was 86 mm. The obtained first admittance adjusting layer was 34 nm. The refractive index of light having a wavelength of 570 nm of Nb ₂ O ₅ was 2.31, and the refractive index of light having a wavelength of 570 nm of the first admittance adjusting layer was 2.31.

(Low refractive index layer B)
Y ₂ O ₃ was deposited by electron beam (EB) at 250 mA and a deposition rate of 4 Å / s using a BMC-800T vapor deposition machine manufactured by Shincron. The thickness of the obtained low refractive index layer B was 3 nm. The refractive index of light with a wavelength of 570 nm of Y ₂ O ₃ was 1.78, and the refractive index of light with a wavelength of 570 nm of the low refractive index layer B was 1.78.

(Second admittance adjustment layer)
Nb ₂ O ₅ was RF-sputtered using Arnelva L-430S-FHS at Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 0.74 Å / s. The target-substrate distance was 86 mm. The obtained second admittance adjusting layer was 33 nm. The refractive index of light with a wavelength of 570 nm of Nb ₂ O ₅ was 2.31, and the refractive index of light with a wavelength of 570 nm of the second admittance adjusting layer was 2.31.

(Third admittance adjustment layer)
Using Anelva L-430S-FHS, SiO ₂ was RF-sputtered at Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 2 Å / s. The target-substrate distance was 86 mm. The obtained third admittance adjusting layer was 45 nm. The refractive index of light with a wavelength of 570 nm of SiO ₂ was 1.46, and the refractive index of light with a wavelength of 570 nm of the third admittance adjustment layer was 1.46.

[Example C-11]
Yamanaka Semiconductor's white substrate (Φ30 mm, thickness 2 mm) was ultrasonically cleaned in ultrapure water (Ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. A first admittance adjustment layer / low refractive index layer A / transparent metal film / low refractive index layer B / second admittance adjustment layer was formed on the white plate substrate (transparent support) by the following method. FIG. 43A shows the spectral characteristics of the obtained transparent conductor, and FIG. 43B shows the admittance locus of the transparent conductor at a wavelength of 570 nm.

(First admittance adjustment layer)
Using Anelva L-430S-FHS, ITO was DC sputtered at Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 150 W, and deposition rate 2.0 Å / s. The target-substrate distance was 86 mm. The obtained first admittance adjusting layer was 39 nm. The refractive index of light with a wavelength of 570 nm of ITO was 2.12, and the refractive index of light with a wavelength of 570 nm of the first admittance adjustment layer was 2.12.

(Low refractive index layer A)
Using Anelva L-430S-FHS, SiO ₂ was RF-sputtered at Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 2 Å / s. The target-substrate distance was 86 mm. The obtained low refractive index layer A was 2 nm. The refractive index of light with a wavelength of 570 nm of SiO ₂ was 1.46, and the refractive index of light with a wavelength of 570 nm of the low refractive index layer A was 1.46.

(Low refractive index layer B)
Using Anelva L-430S-FHS, SiO ₂ was RF-sputtered at Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 2 Å / s. The target-substrate distance was 86 mm. The obtained low refractive index layer B was 2 nm. The refractive index of light with a wavelength of 570 nm of SiO ₂ was 1.46, and the refractive index of light with a wavelength of 570 nm of the low refractive index layer B was 1.46.

(Second admittance adjustment layer)
Using Anelva L-430S-FHS, ITO was DC sputtered at Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 150 W, and deposition rate 2.0 Å / s. The target-substrate distance was 86 mm. The obtained second admittance adjusting layer was 34 nm. The refractive index of light with a wavelength of 570 nm of ITO was 2.12, and the refractive index of light with a wavelength of 570 nm of the second admittance adjustment layer was 2.12.

[Example C-12]
Yamanaka Semiconductor's white substrate (Φ30 mm, thickness 2 mm) was ultrasonically cleaned in ultrapure water (Ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. A first admittance adjustment layer / low refractive index layer A / transparent metal film / low refractive index layer B / second admittance adjustment layer was formed on the white plate substrate (transparent support) by the following method. FIG. 44A shows the spectral characteristics of the obtained transparent conductor, and FIG. 44B shows the admittance locus of the transparent conductor at a wavelength of 570 nm.

(First admittance adjustment layer)
ZnO was DC sputtered using L-430S-FHS manufactured by Anerva Co., Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target power 150 W, and deposition rate 1.4 Å / s. The target-substrate distance was 86 mm. The obtained first admittance adjusting layer was 28 nm. The refractive index of light with a wavelength of 570 nm of ZnO was 2.01, and the refractive index of light with a wavelength of 570 nm of the first admittance adjusting layer was 2.01.

(Transparent metal film)
A palladium palladium (Pt 80 mass%, Pd 20 mass%) film was formed for 0.2 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc., thereby forming a growth nucleus having an average thickness of 0.1 nm. The average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.
Subsequently, Ag was RF-sputtered by using L-430S-FHS manufactured by Anerva Co., Ar 20 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 100 W, and deposition rate 2.5 Å / s. The target-substrate distance was 86 mm. The obtained transparent metal film (6 nm) made of Ag had a plasmon absorption rate of 10% or less over a wavelength range of 400 nm to 800 nm.

(Second admittance adjustment layer)
ZnO was DC sputtered using L-430S-FHS manufactured by Anerva Co., Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target power 150 W, and deposition rate 1.4 Å / s. The target-substrate distance was 86 mm. The obtained second admittance adjusting layer was 54 nm. The refractive index of light with a wavelength of 570 nm of ZnO was 2.01, and the refractive index of light with a wavelength of 570 nm of the second admittance adjusting layer was 2.01.

[Example C-13]
Corning non-alkali glass substrate (EAGLE XG (thickness 7 mm × length 30 mm × width 30 mm)) was ultrasonically cleaned in ultrapure water (an ultrapure water device Synergy UV manufactured by Millipore). As the ultrasonic cleaner, VS-100III manufactured by ASONE was used. A first admittance adjusting layer / transparent metal film / low refractive index layer B / second admittance adjusting layer was formed on the glass substrate (transparent support) by the following method. The spectral characteristic of the obtained transparent conductor is shown in FIG. 45A, and the admittance locus of the transparent conductor at a wavelength of 570 nm is shown in FIG. 45B.

(First admittance adjustment layer)
Nb ₂ O ₅ was RF-sputtered using Arnelva L-430S-FHS at Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 0.74 Å / s. The target-substrate distance was 86 mm. The obtained first admittance adjusting layer was 35 nm. The refractive index of light having a wavelength of 570 nm of Nb ₂ O ₅ was 2.31, and the refractive index of light having a wavelength of 570 nm of the first admittance adjusting layer was 2.31.

(Low refractive index layer B)
Using Anelva L-430S-FHS, MgF ₂ was RF-sputtered at Ar 20 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 3 Å / s. The target-substrate distance was 86 mm. The obtained low refractive index layer B was 5 nm. The refractive index of light with a wavelength of 570 nm of MgF ₂ was 1.38, and the refractive index of light with a wavelength of 570 nm of the low refractive index layer B was 1.38.

[Comparative Example C-1]
Yamanaka Semiconductor's white substrate (Φ30 mm, thickness 2 mm) was ultrasonically cleaned in ultrapure water (Ultrapure water device Synergy UV manufactured by Millipore). As a sonic cleaning machine, VS-100III manufactured by ASONE was used. Only a transparent metal film was formed on the white plate substrate (transparent support material).

(Transparent metal film)
A silver nanowire aqueous dispersion similar to that of Example 2 of the above-mentioned Prior Art Document 2 was spin-coated on the transparent support material and baked at 120 ° C. for 20 minutes. The coater used was 1K-DX manufactured by MIKASA, and the thermostat used was ST-120 manufactured by ESPEC.

[Comparative Example C-2]
With reference to Non-Patent Document 1 described above, a first admittance adjusting layer / transparent metal film / second admittance adjusting layer was formed on a transparent support made of Toyobo PET (Cosmo Shine A4300 thickness 50 μm). The obtained transparent conductor is disposed and used in contact with air. The spectral characteristics of the obtained transparent conductor are shown in FIG. 46A, and the admittance locus of the transparent conductor at a wavelength of 570 nm is shown in FIG. 46B.

(First admittance adjustment layer)
Nb ₂ O ₅ was RF-sputtered using Arnelva L-430S-FHS at Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 0.74 Å / s. The target-substrate distance was 86 mm. The obtained first admittance adjusting layer was 27.7 nm. As described above, the refractive index of light with a wavelength of 570 nm of Nb ₂ O ₅ is 2.31, and the refractive index of light with a wavelength of 570 nm of the first admittance adjustment layer is 2.31.

(Second admittance adjustment layer)
Using an Anelva L-430S-FHS, IZO was RF sputtered at Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 300 W, and deposition rate 2.2 L / s. The target-substrate distance was 86 mm. The obtained second admittance adjusting layer was 36 nm. The refractive index of light having a wavelength of 570 nm of IZO was 2.05, and the refractive index of light having a wavelength of 570 nm of the second admittance adjusting layer was 2.05.

[Evaluation]
The optical admittance at a wavelength of 570 nm of the surface on the first admittance adjustment layer side of the transparent metal film obtained in each example and comparative example is Y1 = x ₁ + ii ₁ , and the second admittance adjustment layer side of the transparent metal film is The value of (x ₁ , y ₁ ) and (x ₂ , y ₂ ) and the equivalent admittance Y _E (x _E , y _E ) when the optical admittance at the surface wavelength of 570 nm is Y2 = x ₂ + iy ₂ Is shown in Table 5. Further, a coordinate distance (x _E −n _env ) ² + (y _E ) between the refractive index of the member or the environment in contact with the surface of the transparent conductor opposite to the transparent support and the equivalent admittance of the transparent conductor. ² ) ^{0.5 is} also shown in Table 5.

Further, Table 6 shows the transmittance, reflectance, absorptance, a * value and b * value in the L * a * b * color system, and surface electrical resistance of the obtained transparent conductor. Table 6 also shows the difference δH (haze degradation) between the haze value H _stack of the transparent conductor and the haze value H _sub of the transparent support material. These were measured in the same manner as in Example A-1.

As shown in Table 6, when a low refractive index layer is laminated on one or both surfaces of the transparent metal film, the average absorption rate of light having a wavelength of 400 to 800 nm is 8.5% or less, The maximum value of the absorption rate was also 10.3% or less. This is because the plasmon absorption can be sufficiently suppressed by laminating the low refractive index layer even if the transparent metal film (Ag film) is thin.

On the other hand, in Comparative Example C-1 in which silver nanowires were formed, the surface electrical resistance was high and haze degradation was also large. Further, in Comparative Example C-2 in which no low refractive index layer is formed, the average absorptance is 9.1%, and it is assumed that plasmon absorption is not sufficiently suppressed.

[Example D-1]
A transparent support (Yamanaka Semiconductor's white board (Φ30 mm, thickness 2 mm)) was prepared, and this was subjected to ultrasonic cleaning in ultrapure water (Ultrapure water device Synergy UV manufactured by Millipore). As a sonic cleaning machine, VS-100III manufactured by ASONE was used.

The photocatalyst layer (TiO ₂ ) was applied to the transparent support material after cleaning with an electron beam by a BMC-800T vapor deposition machine manufactured by Syncron Co., Ltd. with oxygen introduced (2 × 10 ⁻² Pa), 320 mA, and a film formation rate of 3 Å / s. EB) Vapor deposition. The resulting photocatalyst layer had a thickness of 33 nm.

Subsequently, a platinum palladium film was formed on the photocatalyst layer for 0.4 seconds with a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Co., thereby forming a growth nucleus having an average thickness of 0.2 nm. The average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus. Subsequently, Ag was vapor-deposited by a BMC-800T vapor deposition machine (210A resistance heating) manufactured by SYNCHRON, and a transparent metal film (9 nm) made of Ag was obtained. The film formation rate was 5 Å / s.

The transparent metal film was irradiated with light having a wavelength of 350 nm from the transparent metal film side. The exposure amount was 8000 mJ / m ² . The light irradiation was performed through an exposure mask. As the exposure mask, a glass substrate in which chromium was formed in a pattern was used. The light irradiation pattern was the pattern shown in the schematic diagram of FIG. 48 (the line width of the light irradiation portion was 0.02 mm). Thereafter, the transparent metal film was placed in pure water and subjected to ultrasonic cleaning, and the transparent metal film in the light irradiation region was removed.

[Evaluation]
After ultrasonic cleaning, when a tester was applied to the adjacent transparent metal film (area where light was not irradiated) through the area where the transparent metal film was removed (area where light was irradiated), the continuity was confirmed. There was no continuity in between. That is, it was confirmed that the transparent metal film in the region irradiated with light was completely removed. Moreover, when the said transparent metal film was confirmed visually, the line was confirmed in the pattern shape which irradiated the light. That is, according to the method of the present invention, an insulating pattern could be formed on the transparent electrode layer.

[Example D-2]
A transparent conductor was produced in the same manner as in Example D-1, except that the transparent metal film was produced by the following method.
(Method for forming transparent metal film)
An alloy in which 2 at% Zn (zinc) was added to Ag (silver) was prepared. On the above-mentioned photocatalyst layer, from a sputtering apparatus (manufactured by Anelva: L-430S-FHS), with argon introduced (20 sccm), a sputtering pressure of 0.3 Pa at room temperature, a target-side power of 125 W, a deposition rate of 2.2 Å / s. The alloy was subjected to radio frequency (RF) sputtering. The thickness of the obtained transparent metal film was 9 nm.

[Example D-3]
A transparent conductor was produced in the same manner as in Example D-1, except that the transparent metal film was produced by the following method.
(Method for forming transparent metal film)
An alloy in which 0.5 at% Au (gold) was added to Ag (silver) was prepared. On the above-mentioned photocatalyst layer, from a sputtering apparatus (manufactured by Anelva: L-430S-FHS), with argon introduced (20 sccm), a sputtering pressure of 0.3 Pa at room temperature, a target-side power of 125 W, a deposition rate of 2.2 Å / s. The alloy was subjected to radio frequency (RF) sputtering. The thickness of the obtained transparent metal film was 9 nm.

[Example D-4]
A transparent conductor was produced in the same manner as in Example D-1, except that the transparent metal film was produced by the following method.
(Method for forming transparent metal film)
An alloy in which 1 at% Cu (copper) was added to Ag (silver) was prepared. On the above-mentioned photocatalyst layer, from a sputtering apparatus (manufactured by Anelva: L-430S-FHS), with argon introduced (20 sccm), a sputtering pressure of 0.3 Pa at room temperature, a target-side power of 125 W, a deposition rate of 2.2 Å / s. The alloy was subjected to radio frequency (RF) sputtering. The thickness of the obtained transparent metal film was 9 nm.

[Example D-5]
A transparent conductor was produced in the same manner as in Example D-1, except that the transparent metal film was produced by the following method.
(Method for forming transparent metal film)
An alloy in which 15 at% Al (aluminum) was added to Ag (silver) was prepared. On the above-mentioned photocatalyst layer, from a sputtering apparatus (manufactured by Anelva: L-430S-FHS), with argon introduced (20 sccm), a sputtering pressure of 0.3 Pa at room temperature, a target-side power of 125 W, a deposition rate of 2.2 Å / s. The alloy was subjected to radio frequency (RF) sputtering. The thickness of the obtained transparent metal film was 9 nm.

[Evaluation]
Regarding the transparent conductors of Examples D-2 to D-5, conduction between adjacent transparent metal films (areas where light was not irradiated) was confirmed through areas where the transparent metal film was removed (areas where light was irradiated). did. The method for confirming continuity was the same as in Example D-1.
Moreover, the average light transmittance was measured by the following method. The results are shown in Table 7.

<Measurement method of average light transmittance>
Measuring light (light having a wavelength of 450 nm to 800 nm) was incident on the front surface of the transparent conductor at an angle of 5 °, and the average light transmittance was measured with a spectrophotometer U4100 manufactured by Hitachi, Ltd. The measurement light was incident from the transparent metal film side.

In the transparent conductors of Examples D-2 to D-5, any transparent metal film (region not irradiated with light) passed through the region from which the transparent metal film was removed (region irradiated with light). There was no continuity. That is, it was confirmed that the transparent metal film in the region irradiated with light was completely removed. Moreover, when the said transparent metal film was confirmed visually, the line was confirmed in the pattern shape which irradiated the light.
Further, as shown in Table 7, when the Ag ratio in the Ag alloy is 90 at% or more, the average transmittance of light having a wavelength of 450 nm to 800 nm exceeds 60%, and the transparency of the transparent conductor is good. there were.

[Example D-6]
A transparent conductor was produced in the same manner as in Example D-1, except that the thickness of the transparent metal film was 4 nm.

[Example D-7]
A transparent conductor was produced in the same manner as in Example D-1, except that the thickness of the transparent metal film was 5 nm.

[Example D-8]
A transparent conductor was produced in the same manner as in Example D-1, except that the thickness of the transparent metal film was 15 nm.

[Example D-9]
A transparent conductor was produced in the same manner as in Example D-1, except that the thickness of the transparent metal film was 16 nm.

[Evaluation]
For the transparent conductors of Examples D-6 to D-9, conduction between adjacent transparent metal films (areas not irradiated with light) was confirmed through the area where the transparent metal film was removed (areas irradiated with light). did. The method for confirming continuity was the same as in Example D-1.
Moreover, the surface electrical resistance of the transparent conductor was measured. The surface electrical resistance was measured with a Loresta EP MCP-T360 manufactured by Mitsubishi Chemical Analytech.
Further, the average light transmittance was measured in the same manner as in Examples D-2 to D-5. The results are shown in Table 8.

In each of the transparent conductors of Examples D-6 to D-9, any transparent metal film (region not irradiated with light) is adjacent to the transparent metal film through the region where the transparent metal film is removed (region irradiated with light). There was no continuity. That is, it was confirmed that the transparent metal film in the region irradiated with light was completely removed. Moreover, when the said transparent metal film was confirmed visually, the line was confirmed in the pattern shape which irradiated the light.

As shown in Table 8, when the thickness of the transparent metal film (Ag) was 5 nm or more, the surface electrical resistance was 30 Ω / □ or less, and sufficient conduction was obtained. Further, when the thickness of the transparent metal film (Ag) was 15 nm or less, the average transmittance of light having a wavelength of 450 nm to 800 nm exceeded 50%, and the transparency of the transparent conductor was improved. When the thickness of the transparent metal film exceeds 15 nm, it is presumed that Ag inherent reflection occurred and the average transmittance was lowered. FIG. 49 shows the transmittance, absorptivity, and transmittance of light with a wavelength of 400 nm to 800 nm of the transparent conductor of Example D-6 (when the thickness of the transparent metal film is 4 nm). The light absorptivity was measured with a spectrophotometer in the same manner as the transmittance. The light absorptance was determined by 100− (transmittance + reflectance). FIG. 50 shows the transmittance, absorption rate, and transmittance of light with a wavelength of 400 nm to 800 nm of the transparent conductor in Example D-7 (when the transparent metal film is 5 nm).

[Example D-10]
As in Example D-1, a transparent support material, a photocatalyst layer, and a transparent metal film were prepared, and the transparent metal film was irradiated with light in a pattern. Thereafter, the transparent metal film was subjected to ultrasonic cleaning in the same manner as in Example D-1. Furthermore, the following high refractive index layer was produced on the transparent metal film.

(High refractive index layer)
ITO was sputter-deposited by magnetron sputtering manufactured by Osaka Vacuum Co., Ltd. to form a high refractive index layer (36 nm) made of ITO. The film formation rate was 10 Å / s.

Similar to Example D-1, the conduction between adjacent transparent metal films (areas not irradiated with light) through the areas where the transparent metal film was removed (areas irradiated with light) was formed after the formation of the high refractive index layer. As a result of confirmation, there was no conduction between adjacent transparent metal films (areas not irradiated with light) through the areas where the transparent metal film was removed (areas irradiated with light).
Further, as in Examples D-2 to D-5, when the average transmittance of the transparent conductor at a wavelength of 450 nm to 800 nm was measured, the average transmittance was 85% and the transparency was very high.

In Examples E-1 to E-9 and Comparative Examples E-1 to E-3, the average light absorptance of the transparent metal film was measured as follows. The method for measuring the thickness of the film and the method for measuring the surface electrical resistance are the same as in Example A-1.

<Measurement method of light absorptance of transparent metal film>
Measured light (for example, light having a wavelength of 450 nm to 800 nm) is incident on the front surface of a transparent conductor including a transparent support material and a transparent metal film formed on the surface of the transparent conductor from an angle of 5 °. Manufactured by Co., Ltd .: Light transmittance and reflectance were measured with a spectrophotometer U4100. The absorptance was calculated from a formula of 100− (transmittance + reflectance). The measurement light was incident from the transparent metal film side. The absorption rate of the transparent metal film was calculated by subtracting the absorption rate (reference data) of the transparent support material measured separately from the absorption rate of the transparent conductor.

[Example E-1]
A transparent support material made of a white plate and an Ag target were placed in a vacuum chamber of a sputtering apparatus manufactured by Osaka Vacuum. Then, Ag was RF-sputtered at Ar 20 sccm, sputtering pressure 0.5 Pa, room temperature, target-side power (RF) 250 W, and deposition rate 1.6 nm / s (step A). On the other hand, as shown in the timing chart of FIG. 59, during the period from the start of film formation to the end of film formation, power is also applied to the transparent support material side (substrate-side power (RF) 35 W). The transparent metal film formed above was reverse sputtered at an etching rate of 0.1 nm / s (step B). As a result, the actual film formation rate was 1.5 nm / s. The target-substrate distance was 80 mm. An SEM (scanning electron microscope) image of the obtained transparent metal film is shown in FIG. The film thickness of the obtained transparent metal film (Ag film) was 6 nm.

[Example E-2]
A transparent conductor was obtained in the same manner as in Example E-1, except that the substrate-side power (RF) was 50 W and the film formation rate was the value shown in Table 9. An SEM (scanning electron microscope) image of the obtained transparent metal film is shown in FIG. The film thickness of the obtained transparent metal film (Ag film) was 6 nm.

[Example E-3]
A transparent support material made of a white plate and an Ag target were placed in a vacuum chamber of a sputtering apparatus (L-430S-FHS) manufactured by Anelva. Then, Ag was DC-sputtered at Ar 20 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power (DC) 125 W, and film formation rate 0.57 m / s (step A). On the other hand, during the period from the start of film formation to the end of film formation, power is also applied to the transparent support material side (substrate-side power (RF) 15 W), and the transparent metal film formed on the transparent support material is etched. Reverse sputtering was performed at a rate of 0.01 nm / s (step B). As a result, the actual film formation rate was 0.56 nm / s. The target-substrate distance was 86 mm. An SEM (scanning electron microscope) image of the obtained transparent metal film is shown in FIG. Moreover, the film thickness of the obtained transparent metal film (Ag film) was 6 nm.

[Example E-4]
A transparent conductor was obtained in the same manner as in Example E-3 except that the substrate-side power (RF) was 25 W and the film formation rate was the value shown in Table 9. FIG. 56 shows an SEM (scanning electron microscope) image of the obtained transparent metal film. Moreover, the film thickness of the obtained transparent metal film (Ag film) was 6 nm.

[Example E-5]
A transparent support material in which a layer (27.7 nm) made of Nb ₂ O ₅ was formed on Toyobo PET (Cosmo Shine A4300, thickness 50 μm) was prepared. A transparent conductor was obtained in the same manner as in Example E-2 except that the transparent support material was used. The film thickness of the obtained transparent metal film (Ag film) was 6 nm.
The layer made of Nb ₂ O ₅ uses L-430S-FHS manufactured by Anelva, Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target side power 300 W, and deposition rate 0.74 Å / s. Nb ₂ O ₅ was obtained by RF sputtering. At this time, the distance between the target and the substrate was 86 mm.

[Example E-6]
A transparent support material made of a white plate and an Ag target were placed in a vacuum chamber of a sputtering apparatus manufactured by Osaka Vacuum. Then, Ag was RF-sputtered at Ar 20 sccm, sputtering pressure 0.5 Pa, room temperature, target-side power (RF) 250 W, and deposition rate 1.6 nm / s (step A). As shown in the timing chart of FIG. 60, after 2.5 seconds have elapsed from the start of film formation of the Ag film (after the Ag film is formed to 4 nm), power is also applied to the transparent support material side (substrate side power ( RF) 50 W), a transparent metal film formed on the transparent support material was reverse sputtered (step B). The target-substrate distance was 80 mm. The film thickness of the obtained transparent metal film (Ag film) was 7 nm.

[Comparative Example E-1]
Referring to Non-Patent Document 1 described above, a transparent support in which a layer (27.7 nm) made of Nb ₂ O ₅ was formed on PET made by Toyobo (Cosmo Shine A4300 thickness 50 μm) as in Example E-6 The material was prepared.
The transparent support material was placed in a small sputtering apparatus (BC4279) manufactured by Nippon Vacuum Technology Co., Ltd. Then, Ag was DC sputtered at Ar 20 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power (DC) 200 W, and deposition rate 6.7 nm / s.

[Comparative Example E-2]
A transparent conductor was obtained in the same manner as in Example E-1, except that the reverse sputtering (step B) of the transparent metal film was not performed. An SEM (scanning electron microscope) image of the obtained transparent metal film is shown in FIG. The film thickness of the obtained transparent metal film (Ag film) was 6 nm.
[Comparative Example E-3]
A transparent conductor was obtained in the same manner as in Example E-3, except that the reverse sputtering (step B) of the transparent metal film was not performed. An SEM (scanning electron microscope) image of the obtained transparent metal film is shown in FIG. The film thickness of the obtained transparent metal film (Ag film) was 6 nm.

As shown in Table 9, Comparative Example E-2 in which reverse sputtering of the transparent metal film was not performed, and Examples E-1, E-2, and E-6 in which reverse sputtering was performed when the transparent metal film was formed When the reverse sputtering of the transparent metal film was performed, the average absorption rate of the transparent metal film was lower and the surface electrical resistance was lower. Similarly, when Comparative Example E-3 in which reverse sputtering of the transparent metal film was not performed and Examples E-3 and E-4 in which reverse sputtering was performed during film formation of the transparent metal film were compared, When reverse sputtering was performed, the average absorption rate of the transparent metal film was lower and the surface electrical resistance was lower. It is inferred that by performing reverse sputtering at the time of forming the transparent metal film, growth nuclei were formed on the transparent support material, and a thin but smooth film was obtained.

Further, when Comparative Example E-1 in which the transparent metal film was not reverse-sputtered and Example E-5 in which the transparent metal film was reverse-sputtered were compared, Example E-5 had a higher average of transparent metal films. Absorption rate was low. In addition, although the thickness of the transparent metal film was smaller in Example E-5 than in Comparative Example E-1, these surface electric resistance values were equivalent. The transparent metal film of Example E-5 has high smoothness, and it is presumed that sufficient conduction was obtained even with a thin film.

On the other hand, when Example E-2 which was reverse sputtered when the transparent metal film was 3 nm or less was compared with Example E-6 which was reverse sputtered after the transparent metal film became 4 nm, The average absorption rate of the transparent metal film was lower, and the surface electrical resistance was also lower. When reverse sputtering is performed with the transparent metal film being thin, very fine growth nuclei are formed on the transparent support; it is assumed that when the transparent metal film grows from the growth nuclei, a highly smooth film can be obtained. Is done.

[Example E-7]
A transparent support material made of a white plate and an Ag target were placed in a vacuum chamber of a sputtering apparatus manufactured by Osaka Vacuum. A transparent metal film having a thickness of 0.37 nm was obtained by RF sputtering with Ag for 0.23 seconds at an Ar of 20 sccm, a sputtering pressure of 0.5 Pa, a room temperature, a target-side power (RF) of 250 W, and a deposition rate of 1.6 nm / s. Was formed (step A). At this time, the target-substrate distance was 80 mm.
Subsequently, power (substrate-side power (RF) 50 W) is applied to the transparent support material side for 0.23 seconds, and the reverse is performed until the thickness of the transparent metal film formed on the transparent support material becomes 0.30 nm. Sputtered (process B).

As shown in the timing chart of FIG. 61, the above-mentioned process A and process B were performed as one cycle, and 20 cycles were performed. The total thickness of the obtained transparent metal film was 6 nm.

[Example E-8]
A transparent support material made of a white plate and an Ag target were placed in a vacuum chamber of a sputtering apparatus manufactured by Osaka Vacuum. A transparent metal film having a thickness of 0.74 nm was obtained by RF sputtering with Ag for 0.46 seconds at Ar 20 sccm, sputtering pressure 0.5 Pa, room temperature, target-side power (RF) 250 W, and film formation rate 1.6 nm / s. Was formed (step A). At this time, the target-substrate distance was 80 mm.
Subsequently, power (substrate-side power (RF) 50 W) is applied to the transparent support material side for 0.46 seconds until the thickness of the transparent metal film formed on the transparent support material reaches 0.60 nm. Sputtered (Step B).

The above-mentioned process A and process B were made into 1 cycle, and 10 cycles were performed. The total thickness of the obtained transparent metal film was 6 nm.

[Example E-9]
A transparent support material made of a white plate and an Ag target were placed in a vacuum chamber of a sputtering apparatus manufactured by Osaka Vacuum. A transparent metal film having a thickness of 0.37 nm was obtained by RF sputtering with Ag for 0.23 seconds at an Ar of 20 sccm, a sputtering pressure of 0.5 Pa, a room temperature, a target-side power (RF) of 250 W, and a deposition rate of 1.6 nm / s. Was formed (step A). At this time, the target-substrate distance was 80 mm.
Subsequently, power (substrate-side power (RF) 35 W) is applied to the transparent support material side for 0.1 second, and the reverse is performed until the thickness of the transparent metal film formed on the transparent support material becomes 0.36 nm. Sputtered (Step B).

The above-mentioned process A and process B were made into 1 cycle, and 16 cycles were performed. The total thickness of the obtained transparent metal film was 6 nm.

As shown in Table 10, in Examples E-7 to E-9 in which the transparent metal film forming step A and the reverse sputtering step B were performed alternately, the thickness of the transparent metal film was about 6 nm. In any case, the average absorption rate of the transparent metal film was 8.4% or less, and the maximum value of the absorption rate was 9.1% or less. In particular, in Examples E-7 and E-8 in which the thickness Y of the transparent metal film after completion of the first step B is 95% or less of the thickness X of the transparent metal film formed in the first step A, The surface electric resistance value was sufficiently low at 16Ω / □. In these examples, it is speculated that very fine growth nuclei were formed on the transparent support material by reverse sputtering; a highly smooth film was obtained because the transparent metal film grew from the growth nuclei. .

The transparent conductor obtained by the present invention has a low surface electric resistance value and excellent transparency. Therefore, it is preferably used for various types of optoelectronic devices such as various types of displays, touch panels, mobile phones, electronic paper, various types of solar cells, and various types of electroluminescent light control elements.

1, 11, 21, 31, 41

Transparent support material

2, 12, 22 First

admittance adjustment layer

3, 13, 23, 33

Transparent metal film

4, 14, 24 Second admittance adjustment layer 15

Underlayer

26, 27 Low refraction Rate layer 38

Photocatalyst layer

100, 200, 300, 400 Transparent conductor 600 Sputtering apparatus 601 Vacuum chamber 602 Substrate holder 603 Target material 604 Target holder 605 Substrate side power source 606 Target side power source 607 Gas piping 608 Plasma

Claims

A transparent conductor in which a transparent support, a first admittance adjusting layer, a transparent metal film, and a second admittance adjusting layer are laminated in this order,
The transparent metal film has a thickness of 15 nm or less,
The first admittance adjusting layer and the second admittance adjusting layer include a dielectric material or an oxide semiconductor material,
The transparent conductor has an average absorptance of light having a wavelength of 400 nm to 800 nm of 15% or less, and a maximum value of the absorptance of 25% or less,
The first admittance adjusting layer side of the optical admittance Y1 = x 1 + iy 1 wavelength 570nm of the interface of the transparent metal film, the optical admittance of the second admittance adjusting layer side of the wavelength 570nm of the interface of the transparent metal film Y2 = when expressed in x 2 + iy 2, at least one of x or x 2 is 1.6 or more, the transparent conductor.
A transparent conductor in which a transparent support material, an underlayer, a first admittance adjustment layer, a transparent metal film, and a second admittance adjustment layer are laminated in this order,
The optical admittance of wavelength 570nm of the first admittance adjusting layer side of the surface of the underlying layer when expressed in Y0 = x 0 + iy 0, x 0 is the refractive index value smaller than the light wavelength 570nm transparent support Yes,
The first admittance adjusting layer and the second admittance adjusting layer include a dielectric material or an oxide semiconductor material having a refractive index higher than a refractive index of light having a wavelength of 570 nm of the transparent support material,
The transparent metal film has a thickness of 15 nm or less,
The optical admittance Y1 = x 1 + iy 1 wavelength 570nm of the first admittance adjusting layer side surface of the transparent metal film, the optical admittance of wavelength 570nm of the second admittance adjusting layer side surface of the transparent metal film Y2 = when expressed in x 2 + iy 2, it is at least one of x 1 and x 2 is 1.8 or more,
A transparent conductor, wherein an average absorptance of light having a wavelength of 400 nm to 800 nm of the transparent conductor is 10% or less and a maximum value of absorptance of light having a wavelength of 450 nm to 800 nm is 15% or less.
A transparent support, a first admittance adjustment layer, a transparent metal film, and a second admittance adjustment layer are laminated in this order,
The first admittance adjusting layer and the second admittance adjusting layer include a dielectric material or an oxide semiconductor material having a refractive index higher than a refractive index of light having a wavelength of 570 nm of the transparent support material,
At least one surface of the transparent metal film includes a material having a lower refractive index of light having a wavelength of 570 nm than the dielectric material or the oxide semiconductor material included in the first admittance adjustment layer and the second admittance adjustment layer. And a transparent conductor further having a low refractive index layer having a thickness of 0.1 to 15 nm.