JP2015219690A - Transparent conductive device and touch panel - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a transparent conductive device which can be stably connected to external peripheral circuits, and a touch panel having the transparent conductive device.SOLUTION: The transparent conductive device includes: a transparent substrate; a multilayered structure over the transparent substrate; a silver-based transparent metal film between the transparent substrate and the multilayered structure, which is formed of a high refractive-index layer containing dielectric material or oxide material; and a wiring layer over the transparent substrate drawn from the multilayered structure. The wiring layer contains conductive fine particles with diameters after calcination not larger than 3.5 times the thickness of the multilayered structure and has a surface roughness Ra not larger than 4 times the thickness of the multilayered structure.

Description

  The present invention relates to a transparent conductive device and a touch panel using the transparent conductive device.

  In recent years, various electrode materials such as liquid crystal displays, plasma displays, electrode materials for display devices such as inorganic and organic EL (electroluminescence) displays, electrode materials for inorganic and organic EL elements, touch panel materials, solar cell materials, electromagnetic wave shields, infrared reflective films, etc. A transparent conductive film is used in the device.

  Here, in a touch panel type display device (for example, a ticket vending machine, an ATM device, a mobile phone, a game machine, etc.), an electrode pattern composed of a transparent conductive film or the like is arranged as an input means on the image display surface of the display element. Is done. Such an electrode pattern grasps the touch position of the display area as a touch panel and is connected to a lead-out wiring provided in a non-display area (an area outside the display area: a frame area). Connected to an external peripheral circuit or the like. Moreover, as a transparent conductive film used for such various display devices, a transparent conductive film made of ITO (Indium Tin Oxide) with high light transmittance is often used.

  In recent years, a capacitive touch panel has been developed, and it is required to further reduce the surface electrical resistance of the transparent conductive film. However, in the case of a conventional ITO film, although it has excellent light transmittance, the surface electric resistance is not sufficient, voltage drop tends to occur in the vicinity of the center of the panel, and an increase in the size of the touch panel is hindered. Further, when it is attempted to keep the resistance value low, the film thickness of the transparent conductive film is required to some extent, so that the electrode pattern is easily visually recognized, and as a result, the visibility of the display image serving as a base is lowered. In addition, when heat treatment is performed at several 100 ° C. after film formation in order to realize low resistance, it is not suitable for a resin substrate having poor heat resistance. Therefore, there is a problem that the surface electrical resistance of the transparent conductive film cannot be lowered sufficiently.

Therefore, as a means for realizing a transparent conductive film having low resistance and excellent light transmittance without performing heat treatment, a metal thin film layer made of silver or a silver alloy is replaced with a high refractive index thin film layer (for example, ITO, AZO (zinc and aluminum And a transparent conductive thin film laminate having a structure sandwiched between materials such as niobium oxide (Nb ₂ O ₅ ), IZO (indium oxide / zinc oxide), etc. (Patent Document 1). Non-Patent Document 1). Furthermore, a transparent conductive multilayer film in which a film made of silver is sandwiched between ZnS films has also been proposed (Non-Patent Document 2).

JP 2002-15623 A

Transparent Conductive Film Nb2O5 / Ag / IZO with an Anti-Reflection Design, Ywh-Tarng Leu, et al., SID 2012 DIGEST p.352-353 Xuanjie Liu, et al, (2003). Thin Solid Films 441, 200-206

  However, the transparent conductive thin film laminates (referred to as transparent conductors below) shown in Patent Document 1 and Non-Patent Documents 1 and 2 are used for devices that require connection to external peripheral circuits such as the touch panel described above. There is no description. That is, the electrode pattern of such a touch panel needs to be connected to a lead-out wiring for connecting to an external peripheral circuit, but such a specific description is not made.

  Further, when the wiring is drawn out from such a transparent conductor, the drawing wiring is connected to the metal thin film layer used as the electrode pattern of the transparent conductor through the high refractive index thin film layer. . Thus, at the connection interface between the high refractive index thin film layer and the lead-out wiring, the dielectric material or oxide material constituting the high-refractive index thin film layer and the metal material constituting the lead-out wiring are in contact with each other, thereby transferring electrons. There was a problem that an energy barrier was created. That is, since a contact resistance is generated between the high refractive index thin film layer and the lead wiring, it is difficult to obtain stable conduction between the transparent conductor and the lead wiring.

  Therefore, a transparent conductor having a structure in which a metal thin film layer is sandwiched between such high refractive index thin film layers can be used only for applications such as electromagnetic wave shields and infrared reflective films that do not require connection with external peripheral circuits. There was a problem.

  Accordingly, the present invention has been made in view of such a situation, and an object thereof is to provide a transparent conductive device that can be stably connected to an external peripheral circuit, and a touch panel including the transparent conductive device. .

  The above-mentioned problem according to the present invention is solved by the following means.

  The transparent conductive device of the present invention is provided on a transparent substrate in a state where a transparent metal film composed mainly of silver is sandwiched between a transparent substrate and a high refractive index layer containing a dielectric material or an oxide material. A laminated body and a wiring layer provided on the transparent substrate in a state of being drawn out from the laminated body, and the wiring layer has a particle size after firing of 3.5 times or less of the thickness of the laminated body The surface roughness Ra is 4 times or less with respect to the film thickness of a laminated body which contains electroconductive fine particles.

  The transparent conductive device of the present invention is, for example, a touch panel.

  The transparent conductive device configured as described above is provided on the transparent substrate in a state where the transparent metal film is sandwiched between the high refractive index layers and the transparent substrate is drawn out from the laminate. Wiring layer. In particular, the wiring layer contains conductive fine particles whose particle size after firing is 3.5 times or less with respect to the film thickness of the laminate, and the surface roughness Ra is 4 with respect to the film thickness of the laminate. Consists of less than twice. As a result, the transparent metal film and the wiring layer of the laminate can be directly connected to each other, and stable conduction can be obtained as shown in Examples described later.

  In other words, since the transparent conductive device can directly connect the wiring layer to the transparent metal film of the laminate without a high refractive index layer, stable conduction can be obtained regardless of the material constituting the high refractive index layer. It will be. In other words, even when the high refractive index layer of the laminate includes a dielectric material or oxide material with high electrical resistance, conduction such as an energy barrier generated at the connection interface between the high refractive index layer and the wiring layer No worries about defects.

  Therefore, such a transparent conductive device can be stably connected to an external peripheral circuit such as a drive circuit and a control circuit by obtaining stable conduction between the transparent metal film and the wiring layer. That is, application to a device such as a touch panel that requires connection with an external peripheral circuit is possible.

  According to the present invention, a transparent conductive device that can be stably connected to an external peripheral circuit is obtained.

It is a cross-sectional schematic diagram which shows the structure of the transparent conductive device which concerns on 1st Embodiment of this invention. It is a cross-sectional schematic diagram which shows the structure of the transparent conductive device which concerns on 2nd Embodiment of this invention. It is a perspective view which shows schematic structure of the touchscreen which concerns on 3rd Embodiment of this invention. It is a top view of two transparent conductive devices which shows the electrode structure of the touchscreen which concerns on 3rd Embodiment of this invention. It is a schematic diagram which shows the planar arrangement | positioning of the electrode part of the touchscreen which concerns on 3rd Embodiment of this invention. It is a cross-sectional schematic diagram which shows the structure of the touchscreen which concerns on 3rd Embodiment of this invention, and is a figure equivalent to the AA cross section shown in FIG. 4 is a SEM image (cross section) of a wiring layer of paste material A produced in Example 2. FIG. 4 is an SEM image (cross section) of a wiring layer of paste material B produced in Example 2. FIG. 4 is an SEM image (cross section) of a wiring layer of paste material C produced in Example 2. FIG. 4 is a SEM image (cross section) of a wiring layer of paste material D produced in Example 2. FIG. 4 is a SEM image (cross section) of a wiring layer of paste material G produced in Example 2. FIG. 4 is a SEM image (cross section) of a wiring layer of paste material H produced in Example 2. FIG. 4 is an SEM image (surface) of a wiring layer of paste material C produced in Example 2. FIG. 4 is a SEM image (surface) of a wiring layer of paste material D produced in Example 2. FIG. 4 is a SEM image (surface) of a wiring layer of paste material G produced in Example 2. FIG. 4 is a SEM image (surface) of a wiring layer of paste material H produced in Example 2. FIG.

Hereinafter, embodiments of the present invention will be described in the following order based on the drawings.
1. 1. First embodiment: transparent conductive device 2. Second embodiment: transparent conductive device Third embodiment: touch panel

<< 1. First Embodiment: Transparent Conductive Device >>
FIG. 1 is a schematic cross-sectional view showing the configuration of the transparent conductive device according to the first embodiment of the present invention. As shown in FIG. 1, the transparent conductive device 10 includes a laminated body 5 in which a transparent metal film 3 is sandwiched between high refractive index layers 2 and 4 on one main surface of a transparent substrate 1, and is drawn from the laminated body 5. In this state, the wiring layer 7 is provided on one main surface of the transparent substrate 1. Moreover, the laminated body 5 is the structure which laminated | stacked the 1st high refractive index layer 2, the transparent metal film 3, and the 2nd high refractive index layer 4 in this order on one main surface of the transparent substrate 1. FIG. Among these, the transparent metal film 3 is a layer made of silver or an alloy containing silver as a main component, and the first high refractive index layer 2 and the second high refractive index layer 4 have a refractive index higher than that of the transparent substrate 1. Is a layer composed of a high dielectric material or oxide material.

  The wiring layer 7 is a layer configured to contain conductive fine particles 9. And in such a transparent conductive device 10 of this embodiment, it contains the conductive fine particles 9 whose particle size after firing is 3.5 times or less with respect to the film thickness of the laminate 5, and the film thickness of the laminate 5. In contrast, the wiring layer 7 having a surface roughness Ra of 4 times or less is characteristic.

  In the transparent conductive device 10 of the present invention, the laminated body 5 may be laminated in a desired region of the transparent substrate 1 as shown in FIG. Moreover, the transparent metal film 3 of the laminated body 5 may be patterned into a desired shape.

  Here, in the transparent conductive device 10 of the present invention, the region where the multilayer body 5 is formed is referred to as “transmission region a”, and the region where the multilayer body 5 is not formed is referred to as “non-transmission region b” (display region a). Other areas). In the display area a, a region where the transparent metal film 3 is formed is referred to as a “conductive region a1” where electricity is conducted, and a region a2 where the transparent metal film 3 is not formed is referred to as an “insulating region a2.”

  In the transmissive region a, the pattern constituted by the conductive region a1 and the insulating region a2 is appropriately selected according to the use of the transparent conductive device 10. For example, when the transparent conductive device 10 is applied to an electrostatic touch panel, the pattern includes a plurality of conductive regions a1 and line-shaped insulating regions a2 that divide the conductive regions a1.

  Below, the detail of each component which comprises the transparent conductive device 10 of such a structure is demonstrated in order of the transparent substrate 1, the laminated body 5, and the wiring layer 7. FIG. In addition, the transparency of the transparent conductive device 10 of this invention means that the light transmittance in wavelength 550nm is 50% or more in the transmission area | region a in which the laminated body 5 is provided.

<Transparent substrate>
Examples of the transparent substrate 1 include, but are not limited to, a glass substrate and a transparent resin film.

Examples of the transparent resin film include a cellulose ester resin (for example, triacetyl cellulose, diacetyl cellulose, acetylpropionyl cellulose, etc.), a polycarbonate resin (for example, Panlite, Multilon (both manufactured by Teijin Limited)), a cycloolefin resin (for example, Zeonor). (Nippon Zeon Co., Ltd.), Arton (JSR Co., Ltd.), Appel (Mitsui Chemicals Co., Ltd.), acrylic resin (for example, polymethyl methacrylate, acrylite (Mitsubishi Rayon Co., Ltd.), Sumipex (Sumitomo Chemical Co., Ltd.)), polyimide Phenol resin, epoxy resin, polyphenylene ether (PPE) resin, polyester resin (eg, polyethylene terephthalate (PET), polyethylene naphthalate), polyethersulfone, ABS / AS resin, MBS resin, Styrene, methacrylic resins, polyvinyl alcohol / EVOH (ethylene-vinyl alcohol resin), and a transparent resin film comprising a styrenic block copolymer resin.
In addition, when the transparent substrate 1 is a transparent resin film, the film may contain two or more kinds of resin materials.

From the viewpoint of transparency, the transparent substrate 1 may be a glass substrate, or a cellulose ester resin, a polycarbonate resin, a polyester resin (particularly polyethylene terephthalate), a triacetyl cellulose, a cycloolefin resin, a phenol resin, an epoxy resin, or a polyphenylene ether (PPE). A film made of resin, polyethersulfone, ABS / AS resin, MBS resin, polystyrene, methacrylic resin, polyvinyl alcohol / EVOH (ethylene vinyl alcohol resin), or styrene block copolymer resin is preferable.
Particularly preferred is a transparent resin film that can give flexibility to the transparent conductive device 10 and an electronic device such as a touch panel or a display device formed using the same.

  The transparent substrate 1 preferably has high transparency with respect to visible light. The average transmittance of light having a wavelength of 450 to 800 nm is preferably 70% or more, more preferably 80% or more, and 85% or more. More preferably it is. When the average light transmittance of the transparent substrate 1 is 70% or more, the light transmittance of the transparent conductive device 10 is likely to be increased. Moreover, it is preferable that the average absorptance of the light of wavelength 450-800 nm of the transparent substrate 1 is 10% or less, More preferably, it is 5% or less, More preferably, it is 3% or less.

  The average transmittance is measured by making light incident from an angle inclined by 5 ° with respect to the normal of the surface of the transparent substrate 1. On the other hand, the average absorptance is calculated as average absorptance = 100− (average transmissivity + average reflectivity) by making light incident from the same angle as the average transmissivity and measuring the average reflectivity of the transparent substrate 1. . Average transmittance and average reflectance are measured with a spectrophotometer.

  Moreover, it is preferable that the refractive index of the light of wavelength 570nm of the transparent substrate 1 is 1.40-1.95, More preferably, it is 1.45-1.75, More preferably, it is 1.45-1. 70. The refractive index of the transparent substrate 1 is usually determined by the material of the transparent substrate. The refractive index of the transparent substrate 1 is measured with an ellipsometer.

  Moreover, it is preferable that the haze value of the transparent substrate 1 is 0.01-2.5, More preferably, it is 0.1-1.2. When the haze value of the transparent substrate 1 is 2.5 or less, the haze value of the transparent conductive device 10 is suppressed. The haze value of the transparent substrate 1 is measured with a haze meter.

  Moreover, it is preferable that the thickness of the transparent substrate 1 is 1 micrometer-20 mm, More preferably, it is 10 micrometers-2 mm. When the thickness of the transparent substrate 1 is 1 μm or more, the strength of the transparent substrate 1 is increased, and when the first high-refractive index layer 2 is formed on the transparent substrate 1, cracks are difficult to be generated or torn. On the other hand, when the thickness of the transparent substrate 1 is 20 mm or less, the flexibility of the transparent conductive device 10 is sufficient. Furthermore, the transparent conductive device 10 can be made thinner and lighter.

<Laminate>
The laminated body 5 has a configuration in which the first high refractive index layer 2, the transparent metal film 3, and the second high refractive index layer 4 are laminated in this order on one main surface of the transparent substrate 1. It is formed in the transmission region a.

  Moreover, layers other than the 1st high refractive index layer 2, the transparent metal film 3, and the 2nd high refractive index layer 4 may be formed in the laminated body 5 of the transparent conductive device 10 of this invention. For example, when the transparent metal film 3 is formed, the base layer made of a compound that interacts with the silver atoms constituting the transparent metal film 3 and stably bonds the first high refractive index layer 2 and the transparent layer. It may be formed so as to be adjacent to the transparent metal film 3 between the metal film 3.

  The thickness of the laminated body 5 is preferably 50 nm to 200 nm, more preferably 70 nm to 120 mm, from the viewpoint of reducing the thickness and weight of the transparent conductive device 10.

  Below, the detail of each component which comprises the laminated body 5 of such a structure is demonstrated in order of the 1st high refractive index layer 2, the transparent metal film 3, and the 2nd high refractive index layer 4. FIG.

[1. First high refractive index layer]
The first high refractive index layer 2 is a layer that adjusts the light transmittance (optical admittance) of the conduction region a1 on which the transparent metal film 3 is formed, and is formed at least in the conduction region a1 of the transparent conductive device 10. . The first high refractive index layer 2 may also be formed in the insulating region a <b> 2 of the transparent conductive device 10. Here, from the viewpoint of making it difficult to visually recognize the pattern formed of the conduction region a1 and the insulation region a2, it is preferable that the pattern is formed only in the conduction region a1.

  The first high refractive index layer 2 is preferably configured to include a dielectric material or an oxide material having a higher refractive index than that of the transparent substrate 1.

  The refractive index of light having a wavelength of 570 nm of the dielectric material or oxide material included in the first high refractive index layer 2 may be 0.1 to 1.1 larger than the refractive index of light having a wavelength of 570 nm of the transparent substrate 1. Preferably, it is 0.4 to 1.0 larger.

  Further, the dielectric material or oxide material preferably has a specific refractive index of light having a wavelength of 570 nm, more preferably 1.5, more preferably 1.7 to 2.5, still more preferably 1. 8-2.5. When the refractive index of the dielectric material or the oxide material is larger than 1.5, the first high refractive index layer 2 sufficiently adjusts the optical admittance of the transmission region a of the transparent conductive device 10. The refractive index of the first high refractive index layer 2 is adjusted by the refractive index of the material included in the first high refractive index layer 2 and the density of the material included in the first high refractive index layer 2.

The dielectric material or oxide material contained in the first high refractive index layer 2 may be an insulating material, a conductive material, and is preferably a metal oxide.
As the metal _oxide, TiO _2, ITO (indium tin _{oxide), ZnO, Nb 2 O 5} , ZrO 2, CeO 2, Ta 2 O 5, Ti 3 O 5, Ti 4 O 7, Ti 2 O 3, TiO , SnO ₂ , La ₂ Ti ₂ O ₇ , IZO (indium zinc oxide), AZO (Al-doped ZnO), GZO (Ga-doped ZnO), ATO (Sb-doped SnO), ICO (indium cerium oxide), Bi _{2 O 3, Ga2O 3, GeO 2} , WO 3, HfO 2, a-GIO ( gallium, indium, and amorphous oxide composed of oxygen) and the like. The first high refractive index layer 2 may contain only one kind of metal oxide or two or more kinds.

  When the first high refractive index layer 2 is made of a conductive material among the above materials, the first high refractive index layer 2 is patterned so as to be conductive like the transparent metal film 3. In this case, for example, it is not necessary to have a film thickness necessary as an electrode.

  The thickness of the first high refractive index layer 2 is preferably 15 to 150 nm, more preferably 20 to 80 nm. When the thickness of the first high refractive index layer 2 is 15 nm or more, the optical admittance of the conduction region a1 of the transparent conductive device 10 is sufficiently adjusted by the first high refractive index layer 2. On the other hand, if the thickness of the first high refractive index layer 2 is 150 nm or less, the light transmittance of the region including the first high refractive index layer 2 is unlikely to decrease. The thickness of the first high refractive index layer 2 is measured with an ellipsometer.

  The first high refractive index layer 2 may be a layer formed by a general vapor deposition method such as a vacuum deposition method, a sputtering method, an ion plating method, a plasma CVD method, or a thermal CVD method. From the viewpoint of increasing the refractive index (density) of the first high refractive index layer 2, the first high refractive index layer 2 is preferably a layer formed by an electron beam evaporation method or a sputtering method. In the case of the electron beam evaporation method, it is desirable to have assistance such as IAD (ion assist) in order to increase the film density.

  When the first high refractive index layer 2 is a layer patterned into a desired shape, the patterning method is not particularly limited. The first high refractive index layer 2 may be, for example, a layer formed in a pattern by a vapor deposition method by arranging a mask having a desired pattern on the film formation surface; It may be a layer patterned by an etching method.

[2. Transparent metal film]
The transparent metal film 3 is a layer made of silver or an alloy containing silver as a main component, and is a film for conducting electricity in the transparent conductive device 10. Further, the transparent metal film may be formed on the entire surface of the transmission region a of the transparent conductive device 10 or may be patterned into a desired shape. As shown in FIG. 1, a region formed by patterning the transparent metal film 3 is a conduction region a1. However, it is assumed that the transparent metal film 3 is provided so as to be exposed at the end face of the stacked body 5.

  The metal constituting the transparent metal film 3 is preferably composed of silver or an alloy containing 90 at% or more of silver from the viewpoint of high conductivity. Examples of the metal combined with silver include zinc, gold, copper, palladium, aluminum, manganese, bismuth, neodymium, and molybdenum. For example, when silver and gold are combined, salt resistance (NaCl) resistance increases. Furthermore, when silver and copper are combined, the oxidation resistance increases.

  The plasmon absorption rate of the transparent metal film 3 is preferably 10% or less (over the entire range) over a wavelength range of 400 nm to 800 nm, more preferably 7% or less, and even more preferably 5% or less. If there is a region having a large plasmon absorption rate in a part of the wavelength of 400 nm to 800 nm, the transmitted light of the conduction region a1 of the transparent conductive device 10 is likely to be colored.

  The plasmon absorption rate of the transparent metal film 3 at a wavelength of 400 nm to 800 nm is measured by the following procedure.

  (I) A platinum palladium film is formed to a thickness of 0.1 nm on a glass substrate using a magnetron sputtering apparatus. The average thickness of platinum palladium is calculated from the film forming speed and the like of the manufacturer's nominal value of the sputtering apparatus. Thereafter, a 20 nm-thick metal film is formed by sputtering on a glass substrate to which platinum palladium is adhered.

  (Ii) Then, measurement light is incident from an angle inclined by 5 ° with respect to the normal line of the surface of the obtained metal film, and the transmittance and reflectance of the metal film are measured. Then, from the transmittance and reflectance at each wavelength, absorptivity = 100− (transmittance + reflectance) is calculated and used as reference data. The transmittance and reflectance are measured with a spectrophotometer.

  (Iii) Subsequently, a transparent metal film to be measured is formed on the same glass substrate. And the transmittance | permeability and a reflectance are similarly measured about a transparent metal film. The reference data is subtracted from the obtained absorption rate, and the calculated value is defined as the plasmon absorption rate.

  The thickness of the transparent metal film 3 is 10 nm or less, preferably 3 to 9 nm, and more preferably 5 to 8 nm. By setting the thickness of the transparent metal film 3 to 10 nm or less, it is possible to prevent the metal from being reflected on the transparent metal film 3. Furthermore, by setting the thickness of the transparent metal film 3 to 10 nm or less, the optical admittance of the transparent conductive device 10 can be easily adjusted by the first high refractive index layer 2 and the second high refractive index layer 4, and the surface of the transparent metal film 3. It is possible to suppress reflection of light on the surface. The thickness of the transparent metal film 3 is measured with an ellipsometer.

  The transparent metal film 3 may be a film formed by any film forming method. However, in order to change the average transmittance of the transparent metal film 3, a film formed by a sputtering method or described later A film formed on the underlayer is preferable.

  Here, when the film is formed by sputtering, the material collides with the deposition target at high speed during film formation, so that a dense and smooth film can be easily obtained, and the light transmittance of the transparent metal film 3 is likely to be increased. . Further, when the transparent metal film 3 is a film formed by sputtering, the transparent metal film 3 is hardly corroded even in a high temperature and high humidity environment.

  The type of the sputtering method is not particularly limited, and examples include an ion beam sputtering method, a magnetron sputtering method, a reactive sputtering method, a bipolar sputtering method, a bias sputtering method, and a counter sputtering method. The transparent metal film 3 is particularly preferably a film formed by a counter sputtering method. In particular, according to the film formation by the counter sputtering method, the transparent metal film 3 becomes a dense film, and the surface smoothness can be improved. As a result, the surface electrical resistance of the transparent metal film 3 becomes lower and the light transmittance is likely to increase.

On the other hand, when the transparent metal film 3 is a film formed on an underlayer described later, the underlayer becomes a nucleus (growth nucleus) for growing the film when the transparent metal film 3 is formed. The smooth transparent metal film 3 can be formed with a thinner film thickness starting from this growth nucleus. As a result, even if the transparent metal film 3 is thin, plasmon absorption hardly occurs.
In this case, the method for forming the transparent metal film 3 is not particularly limited, and examples thereof include general vapor deposition methods such as vacuum deposition, sputtering, ion plating, plasma CVD, and thermal CVD.

  When the transparent metal film 3 is a film patterned into a desired shape, the patterning method is not particularly limited. For example, the transparent metal film 3 may be a film formed by arranging a mask having a desired pattern, or may be a film patterned by a known etching method.

[3. Second high refractive index layer]
The second high-refractive index layer 4 is a layer for adjusting the light transmittance (optical admittance) of the conduction region a1 where the transparent metal film 3 is formed, and has a pattern composed of the conduction region a1 and the insulation region a2. It is preferable to form in the conduction | electrical_connection area | region a1 of the transparent conductive device 10 from a viewpoint made difficult to visually recognize. In addition, you may provide in the conduction | electrical_connection area | region a1 and the insulation area | region a2 so that the surface of the patterned transparent metal film 3 may be covered.

Such a second high refractive index layer 4 is configured using the same material as the first high refractive index layer 2 described above. From the viewpoint of suppressing the energy barrier at the interface between the second high refractive index layer 4 and the wiring layer 7, it is preferable to use a material containing Zn, such as IGZO, ZnS, GZO, ZnO, ZnS—SiO _2, etc. These may be mixed with other ingredients.

  The first high refractive index layer 2 and the second high refractive index layer 4 may be made of the same material, or may be made of different materials. Moreover, the film thickness may be the same or different. In addition, when the second high refractive index layer 4 is made of a conductive material, the second high refractive index layer 4 is patterned in the same manner as the transparent metal film 3, but has a film thickness necessary for an electrode, for example. There is no need to be.

[4. Underlayer]
Although illustration is omitted here, the transparent conductive device 10 may be provided with an underlayer serving as a growth nucleus when the transparent metal film 3 is formed. The underlayer is preferably formed on the transparent substrate 1 side of the transparent metal film 3 and adjacent to the transparent metal film 3. That is, it is preferably a layer formed between the first high refractive index layer 2 and the transparent metal film 3. The underlayer is preferably formed at least in the transmission region a of the transparent conductive device 10 and may be formed in the non-transmission region b of the transparent conductive device 10.

  When such a base layer is formed on the transparent conductive device 10, the smoothness of the surface of the transparent metal film 3 is enhanced even if the thickness of the transparent metal film 3 is thin. The reason is as follows.

  When the metal material of the transparent metal film 3 is deposited, for example, on the first high refractive index layer 2 by a general vapor deposition method, the metal adhering to the first high refractive index layer 2 is initially formed. Atoms migrate (move) and atoms gather together to form a lump (island structure). And a film grows clinging to this lump. Therefore, in the film at the initial stage of film formation, there is a gap between the lumps and it is not conductive. When a lump further grows from this state, a part of the lump is connected and barely conducted. However, since there is still a gap between the lumps, plasmon absorption occurs. As the film formation proceeds further, the lumps are completely connected and plasmon absorption is reduced. However, on the other hand, the metal inherent reflection due to the thick metal film occurs, and the light transmittance of the transparent metal film 3 is lowered.

  On the other hand, when a base layer made of a material that is difficult to migrate is formed on the first high refractive index layer 2, the transparent metal film 3 grows using the base layer as a growth nucleus. That is, the material of the transparent metal film 3 is difficult to migrate, and the film grows without forming the island-like structure described above. As a result, it becomes easy to obtain a smooth transparent metal film 3 even if the thickness is small.

  Here, the underlayer preferably contains palladium, molybdenum, zinc, germanium, niobium or indium, an alloy of these metals with other metals, or an oxide or sulfide of these metals. Most preferred are those containing zinc (ZnS) or zinc sulfide (ZnS). Further, the underlayer may contain only one kind or two or more kinds.

  The amount of zinc sulfide (ZnS), palladium, molybdenum, zinc, germanium, niobium or indium contained in the underlayer is preferably 20% by mass or more, more preferably 40% by mass or more, and still more preferably 60%. It is at least mass%. When the metal is contained in the base layer in an amount of 20% by mass or more, the affinity between the base layer and the transparent metal film 3 is increased, and the adhesion between the base layer and the transparent metal film 3 is likely to be increased.

  On the other hand, the metal that forms an alloy with palladium, molybdenum, zinc, germanium, niobium, or indium is not particularly limited, and examples thereof include platinum group other than palladium, gold, cobalt, nickel, titanium, aluminum, and chromium.

  The thickness of the underlayer is 3 nm or less, preferably 0.5 nm or less, and more preferably a monoatomic film. The underlayer may be a film in which metal atoms are adhered to the transparent substrate 1 while being separated from each other. When the adhesion amount of the underlayer is 3 nm or less, the underlayer hardly affects the light transmittance and optical admittance of the transparent conductive device 10. The presence or absence of the underlayer is confirmed by the ICP-MS method. Further, the thickness of the underlayer is calculated from the product of the film formation speed and the film formation time.

  The underlayer is a layer formed by sputtering or vapor deposition. Examples of the sputtering method include an ion beam sputtering method, a magnetron sputtering method, a reactive sputtering method, a bipolar sputtering method, and a bias sputtering method. The sputtering time during the underlayer film formation is not particularly limited, but is appropriately selected according to the desired average thickness of the underlayer and the film formation rate. The sputter deposition rate is preferably 0.1 to 15 Å / second, more preferably 0.1 to 7 Å / second.

  On the other hand, examples of the vapor deposition method include a vacuum vapor deposition method, an electron beam vapor deposition method, an ion plating method, and an ion beam vapor deposition method. The deposition time is appropriately selected according to the desired thickness of the underlayer and the film formation rate. The deposition rate is preferably 0.1 to 15 Å / second, more preferably 0.1 to 7 Å / second.

  When the underlayer is a layer patterned into a desired shape, the patterning method is not particularly limited. The underlayer may be, for example, a layer formed in a pattern by a vapor deposition method by placing a mask having a desired pattern on the deposition surface, and is patterned by a known etching method. It may be a layer.

  The transparent conductive device 10 may be provided with a low refractive index layer in contact with the first high refractive index layer 2 and the second high refractive index layer 4 described above. For example, a surface opposite to the surface where the first high refractive index layer 2 and the transparent metal film 3 are in contact, that is, a low refractive index layer may be provided between the first high refractive index layer 2 and the transparent substrate 1. . Further, a low refractive index layer may be provided on the second high refractive index layer 4. By having the low refractive index layer in contact with the high refractive index layer, the optical admittance can be adjusted, and the light transmittance of the transparent conductive device 10 can be further improved.

  The low refractive index layer is preferably formed at least in the transmission region a of the transparent conductive device 10 and may be formed in the non-transmission region b of the transparent conductive device 10. Moreover, when the adjacent 1st high refractive index layer 2 and 2nd high refractive index layer 4 are pattern-formed, you may be provided in the conduction | electrical_connection area | region a1 and the insulation area | region a2 so that the surface may be covered. Similarly, it may be patterned.

Such a low refractive index layer is a layer having a lower refractive index than the first high refractive index layer 2 (and the second high refractive index layer 4). In particular, the refractive index at a wavelength of 550 nm is preferably 0.1 or more lower than the first high refractive index layer 2 (and the second high refractive index layer 4), and the first high refractive index layer 2 (and the second high refractive index layer 2). More preferably, it is 0.3 or more lower than layer 4). Such a low refractive index layer is composed of a material having a low refractive index and light transmittance. For example, a low refractive index material such as magnesium fluoride (MgF ₂ ), lithium fluoride (LiF), calcium fluoride (CaF ₂ ), or aluminum fluoride (AlF ₃ ) is used.

  In addition, the transparent conductive device 10 has a high refractive index layer (first optic admittance) for adjusting the light transmittance (optical admittance) of the conduction region a1 in which the transparent metal film 3 is further formed in contact with the low refractive index layer. Three high refractive index layers) may be formed. For example, a third high refractive index layer may be provided between the surface opposite to the surface where the low refractive index layer and the laminate 5 are in contact, that is, between the low refractive index layer and the transparent substrate 1. Further, a third high refractive index layer may be provided on the low refractive index layer on the second high refractive index layer 4 side.

  The third high refractive index layer is preferably formed at least in the conduction region a1 of the transparent conductive device 10, and may be formed in the insulating region a2 or the non-transmissive region b. Moreover, when the adjacent low-refractive-index layer is patterned, it may be provided in the conduction | electrical_connection area | region a1 and the insulation area | region a2 so that the surface may be covered, and may be patterned similarly.

  In addition, when the base layer, the low-refractive-index layer, and the third high-refractive-index layer described above are formed only in the transmission region a of the transparent conductive device 10, these layers also constitute the laminate of the present application. Become a layer. That is, the film thickness of the laminated body in this case is a thickness including the base layer, the low refractive index layer, and the third high refractive index layer provided in the transmission region.

<Wiring layer>
The wiring layer 7 is a lead-out wiring for connecting to an external peripheral circuit, is provided on the transparent substrate 1 in a state of being drawn out from the multilayer body 5, and is formed in the non-transmissive region b of the transparent conductive device 10. . Such a wiring layer 7 is directly connected to the transparent metal film 3 provided to be exposed at the end face of the stacked body 5. Further, the wiring layer 7 contains conductive fine particles 9 having a particle size after firing of 3.5 times or less with respect to the film thickness of the multilayer body 5, and the surface roughness Ra is relative to the film thickness of the multilayer body 5. It is characteristic that it is composed of four times or less.

  The wiring layer 7 is configured using a conductive paste material that is a mixed material of conductive fine particles 9, a binder, and a solvent.

  The conductive fine particles 9 are conductive particles such as simple metals, metal particles such as alloys, and carbon particles, and the shape is not particularly limited, such as a spherical shape, an elliptical shape, a needle shape, or a flat plate shape. Examples of the metal include platinum, gold, silver, copper, nickel, aluminum, palladium, or an alloy thereof, silver coated powder in which metal particles are coated with silver, and silver powder, copper from the viewpoint of conductivity and reliability. A powder or the like is preferable.

  Moreover, it is preferable that the particle diameter of the conductive fine particles 9 is 3.5 times or less after firing relative to the film thickness of the laminate 5, and the particle diameter after firing is 1.5 times or less. More preferably. That is, for example, when the thickness of the multilayer body 5 is 100 nm, the particle diameter of the conductive fine particles 9 is preferably 350 nm or less, and more preferably 150 nm. In addition, the wiring layer 7 is preferably configured with a surface roughness Ra of 4 times or less with respect to the film thickness of the stacked body 5, and the surface roughness Ra is configured with a film thickness of the stacked body or less. Is more preferable. Thereby, as shown in the Example mentioned later, conduction | electrical_connection with the transparent metal film 3 and the wiring layer 7 of the laminated body 5 was obtained stably.

  As the binder, a resin excellent in electrical insulation, heat resistance, moisture resistance and the like is used. Specifically, fluorine resin, polyimide resin, polyamideimide resin, polyesterimide resin, polyester resin, polyethersulfone resin, polyetherketone resin, polyetheretherketone resin, polybenzimidazole resin, polybenzoxazole resin, polyphenylene sulfide A resin, a bismaleimide resin, an epoxy resin, a phenol resin, a phenoxy resin, or the like is used alone or in combination. Moreover, an epoxy resin is preferably used from a viewpoint which is excellent in heat resistance and electrical insulation.

  As the solvent, an organic solvent that is soluble in the binder resin and is non-corrosive to the substrate on which the conductive paste is applied is preferably used. Specifically, toluene, methanol, ethanol, isopropanol, acetone, dioxolane, hexane, triethylamine, isobutyl acetate, butyl acetate, ethyl acetate, methyl ethyl ketone (MEK), methyl isobutyl ketone, cellosolve, ethylene glycol, dimethylformamide (DMF), Examples thereof include organic solvents such as xylene, N-methylpyrrolidone, butyl carbitol, butyl carbitol acetate, terpineol, and diethyl phthalate. In addition, several types of these solvents can also be used in combination.

  In addition, although content of a solvent is selected suitably, prescription design is normally carried out as 70-95 mass% by resin solid content density | concentration. Further, the content of the conductive fine particles is also set as appropriate.

  As a method for forming the wiring layer 7 in a desired pattern, a conventionally known method can be used, and examples thereof include a screen printing method, an intaglio printing method, a lithographic printing method, a dispenser method, and an ink jet method. Here, after the conductive paste material described above is printed on the surface of the transparent substrate 1 from the laminate 5, a desired wiring pattern can be formed by drying and baking the solvent. In addition, it is preferable that it is 110-140 degreeC from a heat resistant viewpoint of a board | substrate, and, as for baking temperature, it is more preferable that it is 110-130 degreeC. Moreover, it is preferable that baking time is 5 to 60 minutes.

<Effect>
The transparent conductive device 10 configured as described above includes a laminate 5 provided on the transparent substrate 1 in a state where the transparent metal film 3 is sandwiched between the first high refractive index layer 2 and the second high refractive index layer 4. And a wiring layer 7 provided on the transparent substrate in a state of being drawn out from the laminated body 5. In particular, the wiring layer 7 includes conductive fine particles having a particle size after firing of 3.5 times or less with respect to the thickness of the laminated body, and the surface roughness Ra is 4 times or less. Thereby, it becomes possible to directly connect the transparent metal film 3 and the wiring layer 7 of the laminated body 5, and stable conduction is obtained as shown in an example described later.

  That is, in the transparent conductive device 10, the wiring layer 7 can be directly connected to the transparent metal film 3 of the laminate 5 without the first high refractive index layer 2 and the second high refractive index layer 4. Regardless of the material constituting the high refractive index layer 2 and the second high refractive index layer 4, stable conduction can be obtained. That is, even when the first high-refractive index layer 2 and the second high-refractive index layer 4 of the laminate 5 are configured to include a dielectric material or oxide material having a high electrical resistance, the first high-refractive index layer 2 In addition, there is no fear of conduction failure such as an energy barrier generated at the connection interface between the second high refractive index layer 4 and the wiring layer 7.

  Therefore, such a transparent conductive device 10 can be stably connected to an external peripheral circuit such as a drive circuit and a control circuit by obtaining stable conduction between the transparent metal film 3 and the wiring layer 7. It becomes. That is, application to a device such as a touch panel that requires connection with an external peripheral circuit is possible.

  In addition, in the case of a configuration in which a base layer is provided between the first high refractive index layer 2 and the transparent metal film 3, a smooth transparent metal film 3 is easily obtained even if the thickness is small. Thinning can be achieved while maintaining conductivity. And even if it is such a thin transparent metal film 3, according to the wiring layer 7 of the structure mentioned above, with respect to the transparent metal film 3 of the laminated body 5, the 1st high refractive index layer 2 and the 2nd high refractive index. Since the wiring layer 7 can be directly connected without going through the layer 4, stable conduction can be obtained.

≪2. Second Embodiment: Transparent Conductive Device >>
FIG. 2 is a schematic cross-sectional view showing the configuration of the transparent conductive device according to the second embodiment of the present invention. The transparent conductive device 20 shown in this figure is different from the transparent conductive device 10 described with reference to FIG. 1 in that the high refractive index layer is configured as a zinc sulfide-containing layer, and the high refractive index layer, the transparent metal film, Between these, there is a place where a laminated body further having a sulfidation preventing layer is used, and other configurations are the same. For this reason, the same code | symbol is attached | subjected to the same component and the overlapping description is abbreviate | omitted.

  That is, the transparent conductive device 20 is provided with a laminated body 25 in which a transparent metal film 3 is sandwiched between high refractive index layers 2 ′ and 4 ′ (zinc sulfide-containing layers) on one main surface of the transparent substrate 1. In this configuration, the wiring layer 7 is provided on one main surface of the transparent substrate 1 in a state of being pulled out from the body 25.

<Laminate>
The laminated body 25 includes a first high refractive index layer 2 ′, an antisulfurization layer 21, a transparent metal film 3, an antisulfurization layer 21, and a second high refractive index layer 4 ′ in this order on one main surface of the transparent substrate 1. It is a laminated structure. In particular, the first high-refractive index layer 2 ′ and the second high-refractive index layer 4 ′ are composed of zinc sulfide-containing layers containing zinc sulfide (ZnS), and the zinc sulfide-containing layers 2 ′ and 4 ′ and the transparent metal It is characteristic that an antisulfurization layer 21 containing a compound containing zinc (Zn) is formed between the film 3 and the film 3.

  Here, the reason why the sulfidation preventing layer 21 is formed between the zinc sulfide-containing layers 2 ′ and 4 ′ and the transparent metal film 3 will be described in detail.

  For example, when the transparent metal film 3 and the zinc sulfide-containing layers 2 ′ and 4 ′ are formed adjacent to each other, a metal sulfide is likely to be generated at the interface, and the light transmittance of the laminate 25 is likely to be reduced. There is a problem. The metal sulfide is presumed to be produced as follows.

  When the transparent metal film 3 is formed on the zinc sulfide-containing layer 2 ′ by a vapor phase film forming method such as sputtering, the unreacted sulfur component in the zinc sulfide-containing layer 2 ′ is used as the material of the transparent metal film 3 ( The metal material is repelled into the film forming atmosphere. Then, the ejected sulfur component reacts with the metal material, and metal sulfide is deposited on the zinc sulfide-containing layer 2 '. In particular, when the zinc sulfide-containing layer 2 ′ and the transparent metal film 3 are continuously formed, the sulfur component contained in the film formation atmosphere of the zinc sulfide-containing layer 2 ′ remains in the atmosphere of the transparent metal film 3. . The sulfur component reacts with the metal material, and metal sulfide is deposited on the zinc sulfide-containing layer 2 '.

  On the other hand, when the zinc sulfide-containing layer 4 ′ is formed on the transparent metal film 3, the metal material in the transparent metal film 3 is blown out into the film formation atmosphere by the material (sulfur component) of the zinc sulfide-containing layer 4 ′. It is. Then, the ejected metal material reacts with the sulfur component, and metal sulfide is deposited on the surface of the transparent metal film 3. Furthermore, a metal sulfide is also generated on the surface of the transparent metal film 3 by contacting the surface of the transparent metal film 3 with the sulfur component in the film forming atmosphere.

  In the laminated body 25 of the present embodiment, as shown in FIG. 2, the sulfurization preventing layer 21 is laminated on the zinc sulfide-containing layer 2 '. In this case, since the zinc sulfide-containing layer 2 ′ is protected by the sulfide prevention layer 21, it is difficult for the sulfur component in the zinc sulfide-containing layer 2 ′ to be expelled when the transparent metal film 3 is formed. Further, when the zinc sulfide-containing layer 2 ′, the sulfide prevention layer 21 and the transparent metal film 3 are continuously formed, the sulfur remaining in the film-forming atmosphere after the zinc sulfide-containing layer 2 ′ is formed. The component reacts with the component of the sulfidation prevention layer 21 or is adsorbed by the component of the sulfidation prevention layer 21. Therefore, the film forming atmosphere of the transparent metal film 3 to be formed next does not easily contain a sulfur component, and the generation of metal sulfide is suppressed.

  In the laminated body 25, the sulfidation preventing layer 21 is laminated on the transparent metal film 3. In this case, since the transparent metal film 3 is protected by the sulfidation preventing layer 21, the metal material in the transparent metal film 3 is hardly ejected when the zinc sulfide-containing layer 4 'is formed. In addition, since the sulfur component in the film formation atmosphere of the zinc sulfide-containing layer 4 ′ reacts with or is adsorbed by the component of the sulfide prevention layer 21, the surface of the transparent metal film 3 Hard to touch. Therefore, it is difficult for metal sulfide to be generated on the surface of the transparent metal film 3.

  Therefore, in this embodiment, as shown in FIG. 2, an antisulfurization layer 21 is formed between the zinc sulfide-containing layers 2 ′ and 4 ′ and the transparent metal film 3. Hereinafter, the zinc sulfide-containing layers 2 ′ and 4 ′ and the sulfide prevention layer 21 will be described in this order.

[1. Zinc sulfide-containing layer 2 ′, 4 ′]
The zinc sulfide-containing layers 2 ′ and 4 ′ are high refractive index layers for the transparent substrate 1 and are layers for increasing the moisture resistance of the transparent conductive device 20 and are layers containing zinc sulfide (ZnS). Such zinc sulfide-containing layers 2 ′ and 4 ′ contain zinc sulfide (ZnS), so that moisture is contained from the opposite side of the zinc sulfide-containing layers 2 ′ and 4 ′ on the side where the transparent metal film 3 is provided. Is difficult to permeate, and corrosion of the transparent metal film 3 is suppressed.

  In addition, the zinc sulfide-containing layers 2 ′ and 4 ′ are preferably formed only in the conduction region a <b> 1 from the viewpoint of making it difficult to visually recognize the pattern including the conduction region a <b> 1 and the insulation region a <b> 2.

The zinc sulfide-containing layers 2 ′ and 4 ′ may contain only zinc sulfide (ZnS), or may contain other materials together with zinc sulfide (ZnS). Examples of the material contained together with zinc sulfide (ZnS) include the dielectric material or oxide material of the high refractive index layer shown in FIG. 1, such as metal oxide and silicon dioxide (SiO ₂ ), preferably silicon dioxide. (SiO ₂ ). When silicon dioxide (SiO ₂ ) is contained together with zinc sulfide (ZnS), the zinc sulfide-containing layers 2 ′ and 4 ′ are likely to be amorphous, and the flexibility of the transparent conductive device 20 is likely to be enhanced.

  When the zinc sulfide-containing layers 2 ′ and 4 ′ contain other materials together with zinc sulfide (ZnS), the amount of zinc sulfide (ZnS) is the total number of moles of materials constituting the zinc sulfide-containing layers 2 ′ and 4 ′. On the other hand, it is preferably 0.1% by mass or more and 95% by mass or less, more preferably 50% by mass or more and 90% by mass or less, and still more preferably 60% by mass or more and 85% by mass or less. When the ratio of zinc sulfide (ZnS) is high, the sputtering rate increases, and the deposition rate of the zinc sulfide-containing layers 2 ′ and 4 ′ increases. On the other hand, if many components other than zinc sulfide (ZnS) are contained, the amorphousness of the zinc sulfide-containing layers 2 'and 4' increases, and cracking of the layers is suppressed.

[2. Antisulfurization layer]
The sulfide prevention layer 21 is a layer for protecting the transparent metal film 3 adjacent to the zinc sulfide-containing layers 2 ′ and 4 ′ from being sulfided, and is a layer containing a compound containing zinc (Zn). . From the viewpoint of preventing sulfidation of the transparent metal film 3, it is preferably provided at least between the zinc sulfide-containing layer 2 ′ and the transparent metal film 3 and between the transparent metal film 3 and the zinc sulfide-containing layer 4 ′. .

  Further, the sulfide prevention layer 21 is provided between the zinc sulfide-containing layers 2 ′ and 4 ′ and the transparent metal film 3, respectively. That is, between the first high refractive index layer 2 ′ (zinc sulfide-containing layer) and the transparent metal film 3, and between the transparent metal film 3 and the second high refractive index layer 4 ′ (zinc sulfide-containing layer), A sulfidation prevention layer 21 is provided for each. Thereby, it is possible to prevent the transparent metal film 3 of the transparent conductive device 20 from being sulfided and sufficiently enhance the light transmittance. The sulfidation prevention layer 21 may be configured such that the sulfidation prevention layer 21 is formed between any one of the zinc sulfide-containing layers 2 ′ and 4 ′ and the transparent metal film 3.

  The sulfidation preventing layer 21 is a layer containing metal oxide, metal nitride, metal fluoride, etc., or zinc (Zn). The sulfidation preventing layer 21 may contain only one kind or two or more kinds. However, when the zinc sulfide-containing layers 2 ′ and 4 ′, the sulfide prevention layer 21 and the transparent metal film 3 are continuously formed, the metal oxide can react with the sulfur component, or the sulfur component can be reduced. An adsorbable compound is preferred. When the metal oxide is a compound that reacts with the sulfur component, it is preferable that the reaction product of the metal oxide and the sulfur component has high visible light permeability.

Examples of the metal oxide include TiO ₂ , ITO, ZnO, Nb ₂ O ₅ , ZrO ₂ , CeO ₂ , Ta ₂ O ₅ , Ti ₃ O ₅ , Ti ₄ O ₇ , Ti ₂ O ₃ , TiO, SnO ₂ , _{la 2 Ti 2 O 7, IZO} , AZO, GZO, ATO, ICO, Bi2O 3, a-GIO, Ga 2 O 3, GeO 2, SiO 2, Al 2 O 3, HfO 2, SiO, MgO, Y 2 O ₃ , WO ₃ , and the like.

Examples of the metal fluoride include LaF ₃ , BaF ₂ , Na ₅ Al ₃ F ₁₄ , Na ₃ AlF ₆ , AlF ₃ , MgF ₂ , CaF ₂ , BaF ₂ , CeF ₃ , NdF ₃ , YF _{3 and the} like. It is done.

Examples of the metal nitride include Si ₃ N ₄ and AlN.

  The thickness of the sulfidation preventing layer 21 is preferably a thickness that can protect the surface of the zinc sulfide-containing layer 2 ′ from an impact during the formation of the transparent metal film 3 described later, for example. On the other hand, zinc sulfide (ZnS) that can be contained in the zinc sulfide-containing layer 2 ′ has a high affinity with the metal contained in the transparent metal film 3. Therefore, when the thickness of the sulfurization preventing layer 21 is very thin and a part of the zinc sulfide-containing layer 2 ′ is slightly exposed, the transparent metal film 3 grows around the exposed portion, and the transparent metal film 3 It tends to be precise. That is, the antisulfurization layer 21 on the zinc sulfide-containing layer 2 ′ is preferably thin enough to expose a part of the zinc sulfide-containing layer 2 ′ in a dispersive manner, preferably 0.1 nm to 10 nm, more Preferably it is 0.5 nm-5 nm, More preferably, it is 1 nm-3 nm. The thickness of the sulfidation preventing layer 21 is measured with an ellipsometer.

  The sulfidation preventing layer 21 is a layer formed by a general vapor deposition method, and examples thereof include a vacuum deposition method, a sputtering method, an ion plating method, a plasma CVD method, and a thermal CVD method.

  When the sulfidation preventing layer 21 is a layer patterned into a desired shape, the patterning method is not particularly limited. The sulfidation prevention layer 21 may be a layer formed in a pattern by a vapor deposition method, for example, by placing a mask having a desired pattern on the deposition surface, and may be formed by a known etching method. It may be a patterned layer.

  In addition, in the laminated body 25 of this embodiment, it is preferable that the metal which comprises the transparent metal film 3 is comprised with the silver zinc comprised from silver and zinc from a viewpoint of the sulfidation resistance of the transparent metal film 3. .

  In the present embodiment, the first high refractive index layer 2 and the second high refractive index layer 4 of the transparent conductive device 10 shown in FIG. 1 are composed of a zinc sulfide-containing layer containing zinc sulfide (ZnS). However, for example, either the first high refractive index layer 2 or the second high refractive index layer 4 may be a zinc sulfide-containing layer. In the configuration in this case, it is preferable that an anti-sulfurization layer is formed between the sulfur-containing layer and the transparent metal film 3.

<Effect>
The transparent conductive device 20 configured as described above is pulled out from the laminate 25 provided on the transparent substrate 1 with the transparent metal film 3 sandwiched between the zinc sulfide-containing layers 2 ′ and 4 ′, and the laminate 25. In this state, the wiring layer 7 is provided on the transparent substrate 1. In particular, the laminated body further includes a sulfide prevention layer 21 between the zinc sulfide-containing layers 2 ′ and 4 ′ containing zinc sulfide and the transparent metal film 3. Thereby, the transparent conductive device 20 is further improved in moisture resistance in addition to the effects of the first embodiment while maintaining light transmittance by preventing the transparent metal film 3 from being sulfided.

<Uses of transparent conductive devices>
The transparent conductive devices described in the first and second embodiments include various types of displays such as liquid crystal, plasma, organic electroluminescence, field emission, touch panels, mobile phones, electronic paper, various solar cells, and various electroluminescence dimming. It can be preferably used for various optoelectronic devices such as elements.

  At this time, the surface of the transparent conductive device (for example, the surface opposite to the transparent substrate) may be bonded to another member via an adhesive layer or the like. In this case, it is preferable that the optical admittance of the surface of the transparent conductive device approximates the optical admittance of the adhesive layer. Thereby, reflection at the interface between the transparent conductive device and the adhesive layer is suppressed.

  On the other hand, when the transparent conductive device is used in such a configuration that the surface of the transparent conductive device is in contact with air, it is preferable that the optical admittance of the surface of the transparent conductive device and the optical admittance of the air approximate each other. Thereby, reflection of light at the interface between the transparent conductive device and air is suppressed.

≪3. Third Embodiment: Touch Panel >>
FIG. 3 is a perspective view showing a schematic configuration of a touch panel according to the third embodiment of the present invention. FIG. 4 is a plan view of two transparent conductive devices showing the electrode configuration of the touch panel.

  The touch panel 30 shown in these drawings is a projected capacitive touch panel. The touch panel 30 is disposed with the formation surfaces of the two transparent conductive devices 10-1 and 10-2 overlapped in the same direction, and the upper part is covered with a front plate 31. Here, each of the first transparent conductive device 10-1 and the second transparent conductive device 10-2 is the transparent conductive device 10 having the configuration described with reference to FIG.

  That is, the touch panel 30 has a configuration in which the first laminated body 5-1 and the second laminated body 5-2 are provided on one main surface of two transparent substrates, and the first laminated body 5-1. And it is the structure which has the 1st wiring layer 7-1 and the 2nd wiring layer 7-2 in the state pulled out from the 2nd laminated body 5-2.

  Hereinafter, the detail of each main layer which comprises the touchscreen 30 is demonstrated in an order from the transparent substrate 1 side. In addition, it demonstrates using the plane schematic diagram of the electrode part of FIG. 5, and the cross-sectional schematic diagram of FIG. 6 equivalent to the AA cross section with FIG.3 and FIG.4 here. Moreover, the same code | symbol is attached | subjected to the component similar to having demonstrated in previous embodiment, and the overlapping description is abbreviate | omitted.

<Transparent substrates (first transparent substrate 1-1, second transparent substrate 1-2)>
The first transparent substrate 1-1 and the second transparent substrate 1-2 are the transparent substrates 1 described in the transparent conductive device 10 shown in FIG. Further, the laminated first transparent substrate 1-1 and second transparent substrate 1-2 are bonded together by an adhesive not shown here, and also by this adhesive. The first transparent metal film 3-1 and the second transparent metal film 3-2 are insulated. Note that the second transparent substrate 1-2 is provided on the second high refractive index layer 4-1.

<Laminated body (first laminated body 5-1, second laminated body 5-2)>
The first stacked body 5-1 and the second stacked body 5-2 are the stacked body 5 described in the transparent conductive device 10 shown in FIG. In addition, the first stacked body 5-1 and the second stacked body 5-2 are each provided on one main surface of two transparent substrates. Further, here, the first transparent metal film 3-1 of the first laminated body 5-1 is formed as an x electrode pattern in the touch panel 30, and the second transparent metal film 3-of the second laminated body 5-2 is formed. 2 is formed as a y electrode pattern.

[1. High refractive index layer (first high refractive index layer 2-1, 2-2, second high refractive index layer 4-1, 4-2)]
The high-refractive index layers are the first high-refractive index layer 2 and the second high-refractive index layer 4 described in the previous transparent conductive device 10, and are formed in the transmission region a of the transparent conductive devices 10-1 and 10-2. ing.
In the present embodiment, the high refractive index layer is described as being patterned in the same manner as the transparent metal film described below. For example, the first high refractive index layer 2 described with reference to FIG. In the case of using a material having good insulating properties among the constituent materials, it may be formed on the entire surface of the transmission region as necessary.

[2. Transparent metal film (first transparent metal film 3-1, second transparent metal film 3-2)]
The first transparent metal film 3-1 and the second transparent metal film 3-2 are the transparent metal film 3 described in the previous transparent conductive device 10, and the transparent regions of the transparent conductive devices 10-1 and 10-2. a is formed. In addition, here, the first transparent metal film 3-1 is an x electrode pattern in the touch panel 30, and the second transparent metal film 3-2 is a y electrode pattern.

  The first transparent metal film 3-1 is configured as a plurality of x electrode patterns 3x1, 3x2,... Patterned together with the first high refractive index layer 2-1 and the second high refractive index layer 4-1. Each of the x electrode patterns 3x1, 3x2,... Is arranged in parallel while being spaced apart from each other, with each extending in the x direction. Each of these x electrode patterns 3x1, 3x2,... Has a shape in which, for example, rhombus pattern portions arranged in the x direction are linearly connected in the x direction in the vicinity of the apex of the rhombus.

  The second transparent metal film 3-2 is configured as a plurality of y electrode patterns 3y1, 3y2,... Patterned together with the first high refractive index layer 2-2 and the second high refractive index layer 4-2. Yes. Each of the y electrode patterns 3y1, 3y2,... Is arranged in parallel with a distance from each other in a state of extending in the y direction orthogonal to the x electrode patterns 3x1, 3x2,. Each of these y electrode patterns 3y1, 3y2,... Has, for example, a shape in which rhombus pattern portions arranged in the y direction are linearly connected in the y direction in the vicinity of the apex of the rhombus.

  Here, as shown in FIG. 5, the rhombus pattern portions constituting the respective y electrode patterns 3y1, 3y2,... Are viewed in a plan view with respect to the rhombus pattern portions forming the x electrode patterns 3x1, 3x2,. It is arranged at a position that does not overlap, and has a shape that occupies as large a range as possible without overlapping. Thereby, in the transparent region a of the transparent conductive device, the x electrode patterns 3x1, 3x2,... Constituted by the first transparent metal film 3-1 and the y constituted by the second transparent metal film 3-2. The electrode patterns 3y1, 3y2,... Are hardly visible.

  Each y electrode pattern 3y1, 3y2,... Is stacked with each x electrode pattern 3x1, 3x2,. A transparent substrate 1-2 is sandwiched between these laminated portions, so that insulation between the x electrode patterns 3 x 1, 3 x 2,... And the y electrode patterns 3 y 1, 3 y 2,.

<Wiring layer (first wiring layer 7-1, second wiring layer 7-2)>
The first wiring layer 7-1 and the second wiring layer 7-2 are the wiring layers 7 described in the previous transparent conductive device 10, and the first stacked body 5-1 and the second stacked body 5- 2 are drawn out to the non-transmission region b (edge) of the transparent conductive devices 10-1 and 10-2. Further, here, the first wiring layer 7-1 is formed as the x wiring layer 7x in the touch panel 30, and the second wiring layer 7-2 is formed as the y wiring layer 7y.

  The first wiring layer 7-1 is connected to the respective end portions of the above-described x electrode patterns 3x1, 3x2,. It is drawn out to the non-transparent area b (edge) of 1-1.

  Further, the second wiring layer 7-2 is transparent from a position overlapping the end edge of the second stacked body 5-2 so as to be connected to the respective end portions of the y electrode patterns 3y1, 3y2,. It is drawn out to the non-transmissive region b (edge) of the substrate 1-2.

  Note that the x wiring layer 7x and the y wiring layer 7y drawn to the edges of the first transparent substrate 1-1 and the second transparent substrate 1-2 are flexible printed circuit boards at desired positions of the respective transparent conductive devices. Etc. are connected.

<Front plate 31>
The front plate 31 illustrated in FIG. 3 is a plate material on which a portion corresponding to the input position on the touch panel 30 is pressed. Such a front plate 31 is a plate material having optical transparency, and the same material as the transparent substrate 1 is used. The front plate 31 may be used by selecting a material having optical characteristics as required. Such a front plate 31 is attached to the second high refractive index layer 4-1 side of the first laminated body 5-1 by an adhesive although not shown here. The material of the adhesive is not particularly limited as long as it has optical transparency and insulating properties.

  The front plate 31 is provided with a light-shielding film that covers the non-transmissive region b (periphery) of the transparent conductive device (see FIG. 3), and the x wiring layer 7x drawn from the x electrode patterns 3x1, 3x2,. The y wiring layer 7y drawn from the y electrode patterns 3y1, 3y2,... is prevented from being viewed from the front plate 31 side.

<Touch panel operation>
When operating the touch panel 30 as described above, the x electrode patterns 3x1, 3x2,... And the y electrode patterns 3y1, 3y2,... From the flexible printed circuit board connected to the x wiring layer 7x and the y wiring layer 7y. Apply voltage. In this state, when a finger or a touch pen touches the surface of the front plate 31, the capacitance of each part existing in the touch panel 30 changes, and the voltage of the x electrode patterns 3x1, 3x2,... And the y electrode patterns 3y1, 3y2,. It appears as a change. This change varies depending on the distance from the position touched by the finger or touch pen, and is greatest at the position touched by the finger or touch pen. For this reason, the position addressed by the x electrode patterns 3x1, 3x2,... And the y electrode patterns 3y1, 3y2,.

  In the present embodiment, the transparent conductive device 10 of the first embodiment has been described as the first transparent conductive device and the second transparent conductive device constituting the touch panel 30, but the transparent conductive of the second embodiment has been described. You may comprise using the device 20. FIG. Moreover, the structure which combined the transparent conductive device 10 of 1st Embodiment and the transparent conductive device 20 of 2nd Embodiment as a 1st transparent conductive device and a 2nd transparent conductive device may be sufficient.

  Further, in the present embodiment, the configuration in which the x electrode pattern and the y electrode pattern of the touch panel are formed in separate layers using two transparent conductive devices has been described. You may comprise an x electrode pattern and a y electrode pattern. In other words, the transparent conductive device may have an x electrode pattern and a y electrode pattern in which the transparent metal film is provided in an insulated state in the transmission region of the transparent conductive device.

  In this case, for example, in the conductive region where the x electrode pattern and the y electrode pattern intersect, an interlayer insulating film is provided on one of the electrodes, and the connection electrode of the other electrode is provided via the interlayer insulating film. It becomes the composition. That is, the connection electrode of the y electrode pattern is provided on the x electrode pattern via the interlayer insulating film.

<Effect>
The touch panel 30 configured as described above uses a transparent conductive device that can be stably connected to the external peripheral circuit described above as the two transparent conductive devices 10-1 and 10-2. . Accordingly, the touch panel 30 can be stably connected to an external peripheral circuit such as a drive circuit or a control circuit, and the visibility of the underlying display image can be improved. Moreover, since the voltage drop can be suppressed even when the touch panel 30 is enlarged, the touch panel can be enlarged.

  In addition, when the transparent conductive device having a base layer is provided between the first high refractive index layer 2 and the transparent metal film 3, a smooth transparent metal film can be obtained even if the thickness is small. Therefore, it is possible to reduce the thickness while maintaining the conductivity of the touch panel. Therefore, according to such a touch panel, it becomes difficult to visually recognize the x electrode pattern and the y electrode pattern itself formed of a thin transparent metal film, and it is possible to improve the visibility of the underlying display image. .

  EXAMPLES Hereinafter, although this invention is demonstrated concretely based on Example 1, this invention is not limited to a following example.

≪Production of transparent conductive device≫
As shown in the following Table 1, the transparent conductive devices of Samples 101 to 104 were produced.

<Procedure for Manufacturing Transparent Conductive Device of Sample 101>
First, a mask having an opening of 0.5 cm × 5.0 cm is overlapped on the center of a film made of cycloolefin polymer (COP) (hereinafter referred to as a transparent substrate), and IGZO (amorphous oxide semiconductor In-Ga- A laminate in which a first high refractive index layer made of ZnO ₄ ), a transparent metal film made of silver (Ag), and a second high refractive index layer made of IGZO were laminated in this order was formed by the following method. Next, a wiring layer made of a paste material G, which will be described later, was formed in a state of being drawn from the end of the patterned laminate on the transparent substrate.

[First high refractive index layer (IGZO)]
Using Anelva L-430S-FHS, Ar 20 sccm, sputtering pressure 0.3 Pa, room temperature, target side power 300 W, film formation rate 2.2 Å / s, and composed of IGZO with a film thickness of 40 nm by RF sputtering method The first high refractive index layer thus formed was formed. The target-substrate distance was 86 mm. The refractive index of light with a wavelength of 570 nm of IGZO was 2.09, and the refractive index of light with a wavelength of 570 nm of the high refractive index layer was also 2.09.

[Transparent metal film (Ag)]
Using Anelva L-430S-FHS, Ar 20 sccm, sputtering pressure 0.25 Pa, room temperature, temperature 25 ° C., forming rate 0.7 nm / s, and forming a silver (Ag) film thickness of 7.8 nm. Sputtered. The target-substrate distance was 86 mm.

[Second high refractive index layer (IGZO)]
Similar to the first high refractive index layer described above, a second high refractive index layer composed of IGZO having a film thickness of 40 nm was formed.

[Wiring layer]
A pattern-like wiring layer was formed on the surfaces of the transparent substrate and the laminate by a screen printing method using a paste material G containing conductive fine particles composed of silver (Ag). Thereafter, drying was performed at a baking temperature of 130 ° C. for 1 hour. The pattern shape of the wiring layer was a shape drawn on the transparent substrate from both ends in the longitudinal direction of the laminate. The conductive fine particles in the wiring layer had a particle size of 130 nm and a surface roughness Ra of 340 nm.

Here, FIG. 11 is an SEM image in the analysis cross section of the wiring layer made of the paste material G. FIG. FIG. 15 is an SEM image on the analysis surface of the wiring layer composed of the paste material G.
The particle diameter (nm) of the conductive fine particles was determined by measuring the particle diameter of 100 arbitrary conductive fine particles in a processed image obtained by image analysis with a scanning electron microscope (SEM), and taking the average value. Moreover, surface roughness Ra (nm) was measured using surface roughness measuring device WYKO NT3300.

<Procedure for Producing Transparent Conductive Device of Sample 102>
The transparent conductive device of the sample 102 was formed in the same manner as the sample 101 except that the first high refractive index layer and the second high refractive index layer were formed of gallium-doped zinc oxide (GZO) as follows. . The transparent substrate was configured using a glass substrate.

[First high refractive index layer and second high refractive index layer (GZO)]
Using an Osaka vacuum magnetron sputtering system, Ar 20 sccm, sputtering pressure 0.1 Pa, room temperature, target-side power 150 W, film formation rate 1.1 Å / s, and composed of GZO with a film thickness of 40 nm by RF sputtering. A high refractive index layer was formed. GZO was formulated and designed such that the ratio of zinc oxide (ZnO) to gallium oxide (Ga ₂ O ₃ ) was 85 wt%: 15 wt%. The target-substrate distance was 90 mm. The refractive index of light with a wavelength of 570 nm of GZO was 1.92, and the refractive index of light with a wavelength of 570 nm of the high refractive index layer was also 1.92.

<Procedure for Manufacturing Transparent Conductive Device of Sample 103>
As follows, the first high refractive index layer and the second high refractive index layer formed of ZnS-SiO _2, before forming a transparent metal film and the second high refractive index layer, respectively made of GZO sulfide A transparent conductive device of Sample 103 was formed in the same procedure as Sample 101 except that the prevention layer was formed. In addition, the transparent substrate was comprised using the board | substrate made from a polyethylene terephthalate (PET).

[First High Refractive Index Layer and Second High Refractive Index Layer (ZnS-SiO ₂ )]
Using an Osaka vacuum magnetron sputtering system, Ar 20 sccm, O ₂ 0 sccm, sputtering pressure 0.1 Pa, room temperature, target side power 150 W, film formation rate 3.0 Å / s, and ZnS film thickness 40 nm by RF sputtering. A high refractive index layer composed of —SiO ₂ was formed. The target-substrate distance was 90 mm. Moreover, the ratio (molar ratio) between ZnS and SiO ₂ was 80:20, and the refractive index of the high refractive index layer was 2.14.

[Anti-sulfurization layer (GZO)]
Using a magnetron sputtering apparatus of Osaka Vacuum Co., Ar 20 sccm, O ₂ 0 sccm, sputtering pressure 0.1 Pa, room temperature, target side power 150 W, film formation rate 1.1 Å / s, and film thickness 1 nm by RF sputtering. An anti-sulfurization layer composed of GZO was formed. GZO was formulated and designed such that the ratio of zinc oxide (ZnO) to gallium oxide (Ga ₂ O ₃ ) was 85 wt%: 15 wt%. The target-substrate distance was 90 mm. The refractive index of light with a wavelength of 570 nm of GZO was 1.92, and the refractive index of light with a wavelength of 570 nm of the antisulfurization layer was also 1.92.

<Procedure for Producing Transparent Conductive Device of Sample 104>
A transparent conductive device of Sample 104 was prepared in the same procedure as Sample 103, except that the transparent substrate was formed of a substrate made of polycarbonate (PC).

<Evaluation of each sample of Example 1>
About each transparent conductive device of the samples 101-104 produced above, (1) average transmittance | permeability with respect to the light of wavelength 450nm -800nm, (2) sheet resistance, and (3) electrical connection (resistance value) were measured.

(1) The average transmittance was measured as follows.
Matching oil (refractive index = 1.515 manufactured by Nikon Corporation) was applied to the surface of each transparent conductive device on the second high refractive index layer side. Then, the transparent conductive device and a non-alkali glass substrate (EAGLE XG (thickness 7 mm × length 30 mm × width 30 mm)) manufactured by Corning were bonded together. And the transmittance | permeability of the transparent conductive device was measured from the alkali free glass substrate side. At this time, measurement light (for example, light having a wavelength of 450 nm to 800 nm) is incident on the conduction region from an angle inclined by 5 ° with respect to the normal line of the surface of the alkali-free glass substrate. The average transmittance was measured at U4100.
(2) The sheet resistance was measured using a resistivity meter (MCP-T610 manufactured by Mitsubishi Chemical Corporation) by a 4-terminal 4-probe method constant current application method.
(3) The electrical connection (resistance value) was measured by measuring the resistance value by the two-terminal method using the wiring layers provided at both ends of the laminate (0.5 cm × 5 cm) in the prepared samples 101 to 104 as terminals. . In addition, it was determined that the connection was established if the measured resistance value was not more than twice the theoretical value of 100Ω.
Here, the theoretical value of the resistance is the sheet resistance (Rs) × distance (5 cm) / width, where the distance between two points of the terminals provided at both ends in the longitudinal direction of the laminate is 5 cm and the width is 0.5 cm. (0.5 cm). For example, when Rs = 10 Ω / sq., The resistance between the two points is 100 Ω / sq.

  Table 1 below shows the configurations of the samples 101 to 104 and the measurement results of transmittance (%), sheet resistance (Ω / sq.), And electrical connection (resistance value).

  As shown in Table 1, the transparent conductive devices of samples 101 to 104, that is, the particle size of the conductive fine particles after firing with respect to the film thickness of the laminate is 3.5 times or less and the surface roughness Ra is 4 Any of the transparent conductive devices having a wiring layer constituted by a factor of 2 or less obtained electrical continuity. And although the average transmittance | permeability of wavelength 450-800nm is 86% or more, sheet resistance value is also 9.0 ohm / sq. It was the following.

  Further, when comparing the evaluation results of the transparent conductive devices of the samples 101 to 104 having different layer configurations, each of the transparent conductive devices of the samples 103 and 104, that is, the anti-sulfurization layer is provided between the high refractive index layer and the transparent metal film. The transparent conductive device having the configuration has an average transmittance of 90% or more and a sheet resistance of 7.0 Ω / sq. It is suppressed to the following. That is, it was confirmed that the transparent conductive device had conductivity and improved light transmittance.

  (1) Particle diameter (nm) of conductive fine particles in the wiring layer after firing the paste materials A to H, in which the wiring layer in the transparent conductive device of the sample 103 prepared above is formed with each paste material shown in Table 2 below. (2) Surface roughness Ra (nm) and (3) Yield (%) of the transparent conductive device were measured. The wiring layer was formed using the same method as the wiring layer of the sample 103, and (1) the particle size (nm) of the conductive fine particles and (2) the surface roughness Ra (nm) were the same as those in Example 1. It measured similarly. 7 to 12 show SEM images in the analysis section of the wiring layer made of the paste material, and FIGS. 13 to 16 show SEMs on the analysis surface of the wiring layer made of the paste material G. The results are shown in Table 2 below.

  (3) Yield (%) was measured by preparing 100 laminates (0.5 cm × 5 cm) as described above, providing wiring layers at both ends as terminals, and measuring resistance values. The measured resistance value was calculated as acceptable if it was less than twice the theoretical value, and was determined as unacceptable.

  Table 2 below shows the configuration of the wiring layer and the measurement results of the particle diameter (nm), surface roughness Ra (nm), and yield (%) of the conductive fine particles.

  As is apparent from Table 2, each transparent conductive device having a wiring layer composed of paste materials E to H, that is, the particle diameter of the conductive fine particles is 3.5 times or less with respect to the film thickness of the laminate, and The transparent conductive device having a wiring layer having a surface roughness Ra of 4 times or less has a good yield of 75% or more.

  On the other hand, each transparent conductive device having a wiring layer composed of paste materials A to D, that is, the particle size of the conductive fine particles exceeds 3.5 times the film thickness of the laminate, or the surface roughness All of the transparent conductive devices having wiring layers having a thickness Ra exceeding 4 times or both had a yield of 72% or less. Therefore, it was confirmed that each transparent conductive device having such a wiring layer has poor conduction.

  Based on the above, a wiring layer in which the particle size of the conductive fine particles is 3.5 times or less and the surface roughness Ra is 4 times or less with respect to the thickness (89.8 nm) of the laminate is selected. Thus, it was confirmed that stable conduction between the wiring layer and the laminate was obtained.

  The present invention is not limited to the configuration described in the above-described embodiment, and various modifications and changes can be made without departing from the configuration of the present invention.

  DESCRIPTION OF SYMBOLS 10,20 ... Transparent electrically conductive device, 1 ... Transparent substrate, 2, 2 '... 1st high refractive index layer, 3 ... Transparent metal film, 4, 4' ... 2nd high refractive index layer, 5,25 ... Laminate body, 7 ... wiring layer, 9 ... conductive fine particles, 2 ', 4' ... zinc sulfide-containing layer, 21 ... sulfide prevention layer, 1-1 ... first transparent substrate, 1-2 ... second transparent substrate, 3- 1 ... 1st transparent metal film, 3-2 ... 2nd transparent metal film, 3x1, 3x2, 3x3, ... x electrode pattern (first transparent metal film), 3y1, 3y2, 3y3, ... y electrode pattern ( (Second transparent metal film), 5-1 ... first laminated body, 5-2 ... second laminated body, 7-1 ... first wiring layer, 7-2 ... second wiring layer, 7x ... x wiring layer, 7y... y wiring layer,

Claims (9)

A transparent substrate;
In a state of sandwiching a transparent metal film composed mainly of silver in a high refractive index layer containing a dielectric material or an oxide material, a laminate provided on the transparent substrate;
A wiring layer provided on the transparent substrate in a state of being pulled out from the laminate,
The wiring layer contains conductive fine particles whose particle size after firing is 3.5 times or less with respect to the film thickness of the laminate, and the surface roughness Ra is 4 times or less with respect to the film thickness. Consists of transparent conductive devices. The transparent conductive device according to claim 1, wherein the conductive fine particles have a particle size after firing that is not more than twice the film thickness of the laminate. The transparent conductive device according to claim 1, wherein a surface roughness Ra of the wiring layer is equal to or less than a film thickness of the stacked body. The transparent conductive device according to claim 1, wherein the transparent metal film is directly connected to the wiring layer. The transparent conductive device according to any one of claims 1 to 4, wherein at least one of the high refractive index layers is a zinc sulfide-containing layer. The transparent conductive device according to claim 5, further comprising an anti-sulfurization layer between the zinc sulfide-containing layer and the transparent metal film. The transparent conductive device according to claim 6, wherein the antisulfurization layer is made of a compound containing zinc (Zn). The transparent conductive device according to claim 1, wherein the transparent metal film is patterned. A touch panel comprising the transparent conductive device according to claim 8.