WO2014188683A1 - Touch panel electrode substrate, touch panel including touch panel electrode substrate, and display panel - Google Patents

Abstract

The present invention addresses the issue of providing a touch panel electrode substrate having high light transmitting characteristics and a low surface resistance value in a conductive region. In order to solve the issue, this touch panel electrode substrate includes, in the following order, a transparent substrate, a first high refractive index layer, a platinum group-containing layer, which contains Pt and/or Pd, and which has a thickness equal to or less than 1 nm, a conductive layer, and a second high refractive index layer. When the optical admittance of the conductive layer surface on the first high refractive index layer side at a wavelength of 570 nm is expressed by formula of Y1=x₁+iy₁, and the optical admittance of the conductive layer surface on the second high refractive index layer side at a wavelength of 570 nm is expressed by formula of Y2=x₂+iy₂, x₁ and/or x₂ is equal to or more than 1.6.

Description

Electrode substrate for touch panel, touch panel including the same, and display panel

The present invention relates to an electrode substrate for a touch panel including a metal pattern, a touch panel including the same, and a display panel.

In recent years, capacitive touch panels have been developed. The touch panel includes an electrode substrate on which a transparent conductive layer is disposed. As a material constituting such a transparent conductive layer, metals such as Au, Ag, Pt, Cu, Rh, Pd, Al, and Cr, In ₂ O ₃ , CdO, CdIn ₂ O ₄ , Cd ₂ SnO ₄ , and TiO _{2 are used.} , SnO ₂ , ZnO, ITO (Indium Tin Oxide) and other oxide semiconductors are known; from the viewpoint of light transmittance and conductivity, ITO films are frequently used.

However, a large area ITO film tends to increase the surface electrical resistance of the film. Even in a small area, it is necessary to increase the temperature during film formation in order to reduce the surface electrical resistance value of the ITO film. Therefore, there is a problem that an ITO film having a low surface electric resistance value cannot be formed on a substrate made of a resin film or the like.

Therefore, a transparent conductive layer in which Ag is arranged in a mesh shape has been proposed as a transparent conductive layer replacing the ITO film (Patent Document 1). However, the transparent conductive layer of Patent Document 1 has an Ag wire width of about 20 μm. Therefore, the Ag wire is easily visible and cannot be applied to uses that require high transparency. Furthermore, although there is conduction in the wire portion, it does not conduct sufficiently in a region where no wire exists.

A transparent conductive layer containing Ag nanowires has also been proposed (Patent Document 2). However, in order to reduce the surface electrical resistance value of the transparent conductive layer, the thickness of the transparent conductive layer needs to be about 200 nm. Therefore, it is difficult to apply the transparent conductive layer to uses that require flexibility. On the other hand, a transparent conductive layer formed by depositing Ag by a vapor deposition method or the like has also been proposed (Patent Document 3).

JP 2012-53644 A Special table 2009-505358 Special table 2011-508400 gazette

However, it is difficult to increase the light transmittance of the transparent conductive layer made of Ag. For example, when the thickness of the film is increased in order to increase the surface electric resistance value of the transparent conductive layer, Ag inherent reflection occurs and the light transmittance is lowered. On the other hand, when the thickness of the film is reduced in order to increase the light transmittance of the transparent conductive layer, plasmon absorption occurs and the light transmittance is lowered. Furthermore, in this case, the surface electrical resistance value of the transparent conductive layer is also reduced.

The present invention has been made in view of such a situation. An object of the present invention is to provide an electrode substrate for a touch panel having a high light transmittance and a low surface electrical resistance value of a conductive region.

That is, the first of the present invention relates to the following touch panel electrode substrate.
[1] A transparent substrate, a first high refractive index layer containing a dielectric material or an oxide semiconductor material having a refractive index of light having a wavelength of 570 nm higher than that of light having a wavelength of 570 nm of the transparent substrate, and Pt and Pd Of these, a platinum group-containing layer having a thickness of 1 nm or less, a conductive layer made of metal, and a refractive index of light at a wavelength of 570 nm of the transparent substrate. A high-refractive-index dielectric material or a second high-refractive-index layer containing an oxide semiconductor material in this order, and a wavelength of the surface of the conductive layer on the first high-refractive-index layer side when representing the 570nm optical admittance Y1 ₌ x ₁ + iy 1, the optical admittance of wavelength 570nm of the second high refractive index layer side of the surface of the conductive layer in _{Y2 = x 2 + iy 2,} x 1 Among the fine _{x 2,} at least one of which is 1.6 or more, the electrode substrate for a touch panel.

[2] The electrode substrate for a touch panel according to [1], wherein an average absorption rate of light having a wavelength of 400 nm to 800 nm is 10% or less, and a maximum value of absorption rate of light having a wavelength of 400 to 800 nm is 15% or less. .
[3] The electrode substrate for a touch panel according to [1] or [2], wherein the conductive layer has a plasmon absorptance of 15% or less over the entire wavelength range of 400 to 800 nm.
[4] The electrode substrate for a touch panel according to any one of [1] to [3], wherein the conductive layer is made of silver or an alloy containing 90 at% or more of silver.

[5] One or both of the dielectric material or oxide semiconductor included in the first high refractive index layer and the dielectric material or oxide semiconductor included in the second high refractive index layer The electrode substrate for a touch panel according to any one of [1] to [4], which is TiO ₂ or Nb ₂ O ₅ .

[6] On the second high refractive index layer, the refractive index of light having a wavelength of 570 nm is lower than the refractive index of light having a wavelength of 570 nm of the dielectric material or oxide semiconductor contained in the second high refractive index layer. The electrode substrate for a touch panel according to any one of [1] to [5], further comprising an admittance adjusting layer.
[7] The optical admittance of wavelength 570nm of the second high refractive index layer side of the surface of the electrode substrate for the touch panel represented in _{Y E = x E + iy E} , the second high refractive index layer side of the electrode substrate for the touch panel When the refractive index of light having a wavelength of 570 nm of a member or environment in contact with the surface of n is expressed by n _env , ((x _E −n _env ) ² + (y _E ) ² ) satisfies ^0.5 ≦ 0.3. , [1] to [6] The electrode substrate for touch panel according to any one of [6].

The second of the present invention relates to the following touch panel and display panel.
[8] A touch panel including the touch panel electrode substrate according to any one of [1] to [7].
[9] The touch panel according to [8], including two touch panel electrode substrates, wherein the two touch panel electrode substrates are arranged to be stacked.
[10] A display panel in which the touch panel according to [8] or [9] and a display device are stacked.

According to the present invention, it is possible to obtain an electrode substrate for a touch panel having a high light transmittance and a low surface electric resistance value of a conductive region.

FIG. 1 is a schematic cross-sectional view showing an example of a layer structure of an electrode substrate for a touch panel according to the present invention. FIG. 2 is a schematic view showing an example of a pattern formed of a conductive region and an insulating region of the electrode substrate for a touch panel according to the present invention. FIG. 3 is a graph showing the admittance locus of the wavelength 570 nm of the electrode substrate for a touch panel produced in Example 1. FIG. 4A is a graph showing an admittance locus of a conductor having a transparent substrate / conductive layer / high refractive index layer at a wavelength of 570 nm. FIG. 4B is a graph showing admittance loci of a wavelength 450 nm, a wavelength 570 nm, and a wavelength 700 nm of a conductor including a transparent substrate / conductive layer / high refractive index layer. FIG. 5 is a schematic sectional view showing an example of the structure of a projected capacitive touch panel including the touch panel electrode substrate of the present invention. 6A and 6B are explanatory diagrams for explaining an example of a wiring pattern of a projected capacitive touch panel. FIG. 7 is a schematic cross-sectional view showing an example of the structure of a surface capacitive touch panel including the electrode substrate for a touch panel of the present invention. FIG. 8 is a schematic cross-sectional view showing an example of the structure of a surface capacitive touch panel including the electrode substrate for a touch panel of the present invention. FIG. 9 is a schematic cross-sectional view showing an example of the structure of a resistive film type touch panel including the touch panel electrode substrate of the present invention.

An example of the layer structure of the electrode substrate for a touch panel of the present invention is shown in FIG. As shown in FIG. 1, the electrode substrate 100 for a touch panel of the present invention includes a transparent substrate 1 / first high refractive index layer 2 / platinum group-containing layer 3 / conductive layer 4 / second high refractive index layer 5. Included in order.

Further, the touch panel electrode substrate 100 may include layers other than those described above. For example, an admittance adjustment layer (not shown) for adjusting the optical admittance on the electrode substrate surface for the touch panel may be included on the second high refractive index layer 5. However, in the electrode substrate 100 for a touch panel of the present invention, the layers formed on the transparent substrate 1 are all layers made of an inorganic material. For example, even if an adhesive layer made of an organic resin is laminated on the second high refractive index layer 5, the electrode substrate for a touch panel of the present invention is a laminate from a transparent substrate to a second high refractive index layer.

The conductive layer 4 may be patterned into a desired shape, or may be formed on the entire surface of the transparent substrate 1. When the conductive layer 4 is patterned, the region a including the conductive layer 4 is a conductive region (conductive region), and the region b not including the conductive layer 4 is an insulating region (insulating region). is there. That is, in the electrode substrate 100 for a touch panel in FIG. 1, the region a in which the transparent substrate 1, the first high refractive index layer 2, the platinum group-containing layer 3, the conductive layer 4, and the second high refractive index layer 5 are stacked. It is a conductive region. On the other hand, a region b in which the transparent substrate 1, the first high refractive index layer 2, the platinum group-containing layer 3, and the second high refractive index layer 5 are stacked is an insulating region.

The pattern composed of the conductive region a and the insulating region b is appropriately selected according to the use of the electrode substrate 100 for touch panel. When the electrode substrate 100 for a touch panel of the present invention is applied to a projected capacitive touch panel, the pattern composed of the conductive region a and the insulating region b has a plurality of conductive regions a as shown in FIG. And a line-like insulating region b separating the patterns. The conductive region a in the pattern of FIG. 2 is not connected to the region a ′ connected to the circuit of the display device and the circuit, and interacts with the region a ′ to contribute to the detection of the fingertip and the like. There is a region a ″ to be used.

As described above, a conventional conductive layer made of a metal such as an Ag film causes reflection of the metal as the film thickness increases, and plasmon absorption occurs as the film thickness decreases. Therefore, it is difficult to increase the light transmittance of the conductive layer.

On the other hand, in the electrode substrate 100 for a touch panel of the present invention, the conductive layer 4 is disposed on the platinum group-containing layer 3. As will be described later, when the conductive layer 4 is formed after the platinum group-containing layer 3 is formed, the metal contained in the platinum group-containing layer 3 becomes a growth nucleus at the time of forming the conductive layer; A high film is obtained. As a result, metal intrinsic reflection does not occur in the conductive layer 4, and plasmon absorption is further suppressed. Furthermore, the surface electrical resistance of the conductive layer 4 is also reduced.

In the touch panel electrode substrate 100 of the present invention, the conductive layer 4 is sandwiched between the first high refractive index layer 2 and the second high refractive index layer 5 having a relatively high refractive index. Therefore, as will be described later, the optical admittance of the region including the conductive layer 4 is adjusted, and the reflection of light in the region is suppressed.

1. 1. Layer structure of electrode substrate for touch panel 1.1) Transparent substrate The transparent substrate 1 included in the electrode substrate for touch panel 100 may be the same as the substrate included in a general electrode substrate for touch panel. Examples of the transparent substrate 1 include a glass substrate, a cellulose ester resin (for example, triacetylcellulose, diacetylcellulose, acetylpropionylcellulose, etc.), a polycarbonate resin (for example, Panlite, Multilon (both manufactured by Teijin Limited)), cycloolefin Resin (for example, ZEONOR (manufactured by ZEON CORPORATION), ARTON (manufactured by JSR), APPEL (manufactured by Mitsui Chemicals)), acrylic resin (for example, polymethylmethacrylate, “Acrylite (manufactured by Mitsubishi Rayon),) Sumipex (Sumitomo Chemical Co., Ltd.) Manufactured))), polyimide, phenol resin, epoxy resin, polyphenylene ether (PPE) resin, polyester resin (eg, polyethylene terephthalate (PET), polyethylene naphthalate), polyether sulfone, ABS / AS resin, MBS resin Polystyrene, methacrylic resins, polyvinyl alcohol / EVOH (ethylene-vinyl alcohol resin), include a transparent resin film comprising a styrene block copolymer resin. When the transparent substrate is a transparent resin film, the film may contain two or more kinds of resins.

From the viewpoint of transparency, the transparent substrate 1 is a glass substrate, or a cellulose ester resin, a polyester resin (particularly polyethylene terephthalate), a triacetyl cellulose, a cycloolefin resin, a phenol resin, an epoxy resin, a polyphenylene ether (PPE) resin, a polyether sulfone. A film made of ABS / AS resin, MBS resin, polystyrene, methacrylic resin, polyvinyl alcohol / EVOH (ethylene vinyl alcohol resin), or styrene block copolymer resin is preferable.

The transparent substrate 1 preferably has high transparency to visible light; the average transmittance of light having a wavelength of 450 to 800 nm is preferably 70% or more, more preferably 80% or more, and 85% or more. More preferably it is. When the average light transmittance of the transparent substrate 1 is 70% or more, the light transmittance of the electrode substrate for touch panel 100 is likely to increase. Further, the average absorptance of light having a wavelength of 450 to 800 nm of the transparent substrate 1 is preferably 10% or less, more preferably 5% or less, and further preferably 3% or less.

The average transmittance is measured by making light incident from an angle inclined by 5 ° with respect to the normal line of the surface of the transparent substrate 1. On the other hand, the average absorptance is calculated as average absorptance = 100− (average transmissivity + average reflectivity) by making light incident from the same angle as the average transmissivity and measuring the average reflectivity of the transparent substrate 1; . Average transmittance and average reflectance are measured with a spectrophotometer.

The refractive index of light having a wavelength of 570 nm of the transparent substrate 1 is preferably 1.40 to 1.95, more preferably 1.45 to 1.75, and still more preferably 1.45 to 1.70. . The refractive index of the transparent substrate is usually determined by the material of the transparent substrate. The refractive index of the transparent substrate is measured with an ellipsometer.

The haze value of the transparent substrate 1 is preferably 0.01 to 2.5, more preferably 0.1 to 1.2. The haze value of the electrode substrate 100 for touch panels can be suppressed as the haze value of the transparent substrate 1 is 2.5 or less. The haze value is measured with a haze meter.

The thickness of the transparent substrate 1 is preferably 1 μm to 20 mm, more preferably 10 μm to 2 mm. When the thickness of the transparent substrate 1 is 1 μm or more, the strength of the transparent substrate 1 is increased, and the first high refractive index layer 2 is difficult to be cracked or torn. On the other hand, if the thickness of the transparent substrate 1 is 20 mm or less, the flexibility of the electrode substrate 100 for touch panels is sufficient. Furthermore, the thickness of the touch panel including the electrode substrate for touch panel 100 and the display device can be reduced. Moreover, the apparatus containing the electrode substrate 100 for touch panels can be reduced in weight.

1.2) First High Refractive Index Layer The first high refractive index layer 2 is a layer that mainly adjusts the optical admittance of the electrode substrate 100 for a touch panel. The first high refractive index layer 2 may be a layer formed at least in the conductive region a; it may be a layer formed on the entire surface of the transparent substrate 1.

The first high refractive index layer 2 includes a dielectric material or an oxide semiconductor material having a refractive index higher than the refractive index of the transparent substrate 1 described above. The refractive index of light having a wavelength of 570 nm of the dielectric material or oxide semiconductor material is preferably 0.1 to 1.1 larger than the refractive index of light having a wavelength of 570 nm of the transparent substrate 1, and is preferably 0.4 to 1.0. Larger is more preferable.

The refractive index of light having a wavelength of 570 nm of the dielectric material or oxide semiconductor material is preferably larger than 1.5, more preferably 1.7 to 2.5, and still more preferably 1.8 to 2.5. 2.5, particularly preferably 2.2 to 2.5. When the refractive index of the dielectric material or the oxide semiconductor material is larger than 1.5, the optical admittance of the electrode substrate for touch panel 100 is sufficiently adjusted by the first high refractive index layer 2. The refractive index of the first high refractive index layer 2 is adjusted by the refractive index of the material included in the first high refractive index layer 2 and the density of the material included in the first high refractive index layer 2.

The dielectric material or oxide semiconductor material contained in the first high refractive index layer 2 may be an insulating material or a conductive material. The dielectric material or oxide semiconductor material is preferably a metal oxide or metal sulfide; examples of the metal oxide or metal sulfide include TiO ₂ , ITO (indium tin oxide), ZnO, ZnS, Nb ₂ O ₅ , ZrO ₂ , CeO ₂ , Ta ₂ O ₅ , Ti ₃ O ₅ , Ti ₄ O ₇ , Ti ₂ O ₃ , TiO, SnO ₂ , La ₂ Ti ₂ O ₇ , IZO (indium oxide / zinc oxide) ), AZO (Al-doped ZnO), GZO (Ga-doped ZnO), ATO (Sb-doped SnO), ICO (indium cerium oxide), and the like. The metal oxide or metal sulfide is preferably TiO ₂ , ITO, ZnO, Nb ₂ O ₅ or ZnS, more preferably TiO ₂ or Nb ₂ O ₅ from the viewpoints of refractive index and productivity. The first high refractive index layer 2 may contain only one kind of the metal oxide or metal sulfide, or two or more kinds.

The thickness of the first high refractive index layer 2 is preferably 10 to 150 nm, more preferably 20 to 80 nm. When the thickness of the first high refractive index layer 2 is 10 nm or more, the optical admittance of the electrode substrate for touch panel 100 is sufficiently adjusted by the first high refractive index layer 2. On the other hand, if the thickness of the first high refractive index layer 2 is 150 nm or less, the light transmittance of the region including the first high refractive index layer 2 is unlikely to decrease. The thickness of the first high refractive index layer 2 is measured with an ellipsometer.

The first high refractive index layer 2 can be a layer formed by a general vapor deposition method such as a vacuum deposition method, a sputtering method, an ion plating method, a plasma CVD method, a thermal CVD method or the like. From the viewpoint of increasing the refractive index (density) of the first high refractive index layer, the first high refractive index layer is preferably a layer formed by electron beam evaporation or sputtering. In the electron beam evaporation method, in order to increase the film density, it is desirable to have assistance such as IAD (ion assist).

When the first high refractive index layer 2 is a layer formed only in a partial region (for example, the conductive region a) of the transparent substrate 1, the first high refractive index layer 2 is patterned by any method. It may be a layer formed. It may be a layer formed in a pattern by a vapor deposition method by placing a mask having a desired pattern on the surface to be deposited; a layer patterned by a known etching method Good.

1.3) Platinum group-containing layer The platinum group-containing layer 3 is a layer disposed adjacent to the conductive layer 4 described later. The platinum group-containing layer 3 may be a layer formed at least in the conductive region a; it may be a layer formed on the entire surface of the transparent substrate 1.

As described above, when the platinum group-containing layer 3 is included in the touch panel electrode substrate 100, the surface smoothness of the conductive layer 4 is increased, and plasmon absorption is suppressed even when the conductive layer 4 is thin. The reason why the surface smoothness of the conductive layer 4 is enhanced when the platinum group-containing layer 3 is included in the electrode substrate 100 for a touch panel is as follows.

When the material of the conductive layer (for example, a film made of Ag) was deposited on the first high refractive index layer by a general vapor deposition method, the material was deposited on the first high refractive index layer 2 in the initial stage of film formation. Atoms migrate (move) and atoms gather together to form a lump (island structure). And a film grows clinging to this lump. Therefore, in the film at the initial stage of film formation, there is a gap between the lumps and it is not conductive. When a lump further grows from this state, a part of the lump is connected and barely conducted. However, since there is still a gap between the lumps, plasmon absorption is likely to occur. As the film formation proceeds further, the lumps are completely connected and plasmon absorption is reduced. However, on the other hand, the intrinsic reflection of the metal occurs, and the light transmittance of the film decreases.

On the other hand, Pt and Pd contained in the platinum group-containing layer 3 are difficult to migrate on the first high refractive index layer 2. When the conductive layer 4 is formed on such a platinum group-containing layer 3, the material of the conductive layer 4 is difficult to migrate. That is, the film grows uniformly without forming the aforementioned island-like structure. As a result, a smooth conductive layer 4 can be obtained even when the thickness is small.

Here, the platinum group-containing layer 3 includes one or both of Pt and Pd; it is more preferable that at least Pd is included. The ratio of the total amount (% by mass) of Pt and Pd to the total amount (% by mass) of atoms constituting the platinum group-containing layer 3 is preferably 10% by mass or more, more preferably 50% by mass or more, More preferably, it is 80 mass% or more.

The metal other than Pt and Pd contained in the platinum group-containing layer 3 can be, for example, gold, a platinum group other than Pt and Pd, cobalt, nickel, molybdenum, titanium, aluminum, chromium, nickel, or an alloy thereof. The platinum group-containing layer 3 may contain only one kind of these metals or two or more kinds.

The platinum group-containing layer 3 included in the touch panel electrode may be a layer to which metal atoms such as Pt and Pd are attached. That is, metal atoms do not necessarily have to be attached to the entire surface of the first high refractive index layer 2; normally, metal atoms are attached to a part of the first high refractive index layer 2. The thickness of the platinum group-containing layer 3 is 1 nm or less. When the adhesion amount of the platinum group-containing layer 3 is 1 nm or less, the platinum group-containing layer 3 hardly affects the optical admittance of the touch panel electrode substrate 100. The presence or absence of the platinum group-containing layer 3 is confirmed by the ICP-MS method. The thickness of the platinum group-containing layer 3 is calculated from the product of the film formation rate and the film formation time.

The platinum group-containing layer 3 may be a layer formed by sputtering or vapor deposition. Examples of the sputtering method include an ion beam sputtering method, a magnetron sputtering method, a reactive sputtering method, a bipolar sputtering method, and a bias sputtering method. The sputtering time at the time of forming the platinum group-containing layer is appropriately selected according to the desired average thickness of the platinum group-containing layer 3 and the film forming speed. The sputter deposition rate is preferably from 0.1 to 15 Å / second, more preferably from 0.1 to 7 秒 / second.

On the other hand, examples of the vapor deposition method include vacuum vapor deposition method, electron beam vapor deposition method, ion plating method, ion beam vapor deposition method and the like. The deposition time is appropriately selected according to the desired thickness of the platinum group-containing layer 3 and the film formation rate. The deposition rate is preferably 0.1 to 15 Å / second, more preferably 0.1 to 7 Å / second.

When the platinum group-containing layer 3 is a layer formed only in a partial region (for example, the conductive region a) of the transparent substrate 1, the first high refractive index layer 2 is a layer patterned by any method. There may be. It may be a layer formed in a pattern by arranging a mask having a desired pattern on the film formation surface during the sputtering or vapor deposition; a layer patterned by a known etching method. May be.

1.4) Conductive layer The conductive layer 4 is a layer made of metal, and is a film that conducts electricity in the electrode substrate for a touch panel. It may be a layer formed on the entire surface of the transparent substrate 1 or a layer formed on only a part of the region. The pattern of the conductive layer 4 is suitably selected according to the use of the electrode substrate for touch panels.

The metal contained in the conductive layer 4 is not particularly limited as long as it is a highly conductive metal, and may be, for example, silver, copper, gold, platinum group, titanium, chromium, or the like. The conductive layer 4 may contain only one kind of these metals or two or more kinds. From the viewpoint of low plasmon absorption and low reflectance, the conductive layer 4 is preferably made of silver or an alloy containing 90 at% or more of silver. The metal combined with silver can be zinc, gold, copper, palladium, aluminum, manganese, bismuth, neodymium, molybdenum, and the like. For example, when silver and zinc are combined, the sulfidation resistance of the conductive layer is increased. When silver and gold are combined, salt resistance (NaCl) resistance increases. Furthermore, when silver and copper are combined, the oxidation resistance increases.

The plasmon absorptivity of the conductive layer 4 is preferably 15% or less (over the entire range) over a wavelength range of 400 nm to 800 nm, more preferably 10% or less, further preferably 7% or less, and particularly preferably. Is 5% or less. When there is a region having a large plasmon absorption rate in a part of the wavelength of 400 nm to 800 nm, the transmitted light of the conductive region a of the touch panel electrode substrate 100 is easily colored, and the region is easily visible.

The plasmon absorption rate of the conductive layer 4 at a wavelength of 400 nm to 800 nm is measured by the following procedure.
(I) A platinum palladium film is formed to a thickness of 0.1 nm on a glass substrate using a magnetron sputtering apparatus. The average thickness of platinum palladium is calculated from the film forming speed and the like of the manufacturer's nominal value of the sputtering apparatus. Thereafter, a film made of the same metal as the object to be measured is formed on the substrate on which platinum palladium is adhered by a vapor deposition machine to a thickness of 20 nm.

(Ii) Then, measurement light is incident from an angle inclined by 5 ° with respect to the normal of the surface of the obtained metal film, and the transmittance and reflectance of the metal film are measured. Then, from the transmittance and reflectance at each wavelength, absorption rate = 100− (transmittance + reflectance) is calculated and used as reference data. The transmittance and reflectance are measured with a spectrophotometer.

(Iii) Subsequently, the transmittance and reflectance of the conductive layer 4 to be measured are measured in the same manner. Then, the reference data is subtracted from the obtained absorption rate, and the calculated value is defined as the plasmon absorption rate.

The thickness of the conductive layer 4 is preferably 15 nm or less, more preferably 3 to 13 nm, and even more preferably 7 to 12 nm. When the thickness of the conductive layer 4 is 15 nm or less, the original reflection of the metal contained in the conductive layer 4 hardly occurs. Furthermore, when the thickness of the conductive layer 4 is 15 nm or less, as described later, the optical admittance is easily adjusted by the first high refractive index layer 2 and the second high refractive index layer 5, and the conductive region a is visually recognized. It becomes difficult. The thickness of the conductive layer 4 is measured with an ellipsometer.

The conductive layer 4 can be a layer formed by a general vapor deposition method. Examples of the vapor deposition method include a vacuum deposition method, a sputtering method, an ion plating method, a plasma CVD method, a thermal CVD method, and the like. Among these, the vacuum evaporation method or the sputtering method is preferable. According to the vacuum deposition method or the sputtering method, it is easy to obtain the conductive layer 4 having a uniform and desired thickness.

Further, when the conductive layer 4 is a layer formed only on a partial region of the transparent substrate 1, it may be a film patterned by any method. For example, it may be a film formed in a pattern by a vapor deposition method by placing a mask having a desired pattern on the deposition surface; a film patterned by a known etching method. May be.

1.5) Second High Refractive Index Layer The second high refractive index layer 5 is a layer that adjusts the optical admittance of the electrode substrate 100 for a touch panel. The second high refractive index layer 5 may be a layer formed at least in the conductive region a; it may be a layer formed on the entire surface of the transparent substrate 1.

The second high refractive index layer 5 includes a dielectric material or an oxide semiconductor material having a refractive index higher than the refractive index of light having a wavelength of 570 nm of the transparent substrate 1. The refractive index of light having a wavelength of 570 nm of the dielectric material or oxide semiconductor material is preferably 0.1 to 1.1 larger than the refractive index of light having a wavelength of 570 nm of the transparent substrate 1, and is preferably 0.4 to 1.0. Larger is more preferable.

The refractive index of light having a wavelength of 570 nm of the dielectric material or oxide semiconductor material contained in the second high refractive index layer 5 is preferably larger than 1.5, more preferably 1.6 to 2.5, More preferably, it is 1.8 to 2.5, and particularly preferably 2.2 to 2.5. When the refractive index of the dielectric material or the oxide semiconductor material is larger than 1.5, the optical admittance of the electrode substrate for touch panel 100 is sufficiently adjusted by the second high refractive index layer 5. The refractive index of the second high refractive index layer 5 is adjusted by the refractive index of the material included in the second high refractive index layer 5 and the density of the material included in the second high refractive index layer 5.

The dielectric material or the oxide semiconductor material included in the second high refractive index layer 5 may be an insulating material or a conductive material. The dielectric material or the oxide semiconductor material can be the same as the material included in the first high refractive index layer 2. The first high refractive index adjusting layer 2 and the second high refractive index 5 may include the same material or different materials.

The thickness of the second high refractive index layer 5 is preferably 10 to 150 nm, more preferably 20 to 80 nm. When the thickness of the second high refractive index layer 5 is 10 nm or more, the optical admittance of the electrode substrate for touch panel 100 is sufficiently adjusted by the second high refractive index layer 5. On the other hand, if the thickness of the second high-refractive index layer 5 is 150 nm or less, the light transmittance of the region including the second high-refractive index layer 5 is unlikely to decrease. The thickness of the second high refractive index layer 5 is measured with an ellipsometer.

As with the first high refractive index layer 2 described above, the second high refractive index layer 5 is a general vapor deposition method such as a vacuum deposition method, a sputtering method, an ion plating method, a plasma CVD method, or a thermal CVD method. It may be a layer formed by the method. Further, when the second high refractive index layer 5 is a layer formed only in a partial region of the transparent substrate 1, it may be a layer patterned by any method. For example, it may be a layer formed by depositing a mask or the like having a desired pattern on the deposition surface and patterned in a vapor phase deposition method, or a layer patterned by a known etching method. May be.

1.6) Admittance adjustment layer In the electrode substrate for touch panel, the refractive index of light having a wavelength of 570 nm of the dielectric material or the oxide semiconductor material contained in the second high refractive index layer is further formed on the second high refractive index layer. An admittance adjusting layer including a dielectric material or an oxide semiconductor material having a low refractive index of light having a wavelength of 570 nm may be stacked. The admittance adjustment layer is a layer for finely adjusting the optical admittance of the electrode substrate for touch panel. The admittance adjusting layer may be a layer formed at least in the conductive region a; it may be a layer formed on the entire surface of the transparent substrate 1.

The refractive index of light having a wavelength of 570 nm of the dielectric material or oxide semiconductor material included in the admittance adjusting layer is 0.03 to 0. 0 than the refractive index of the dielectric material or oxide semiconductor material included in the second high refractive layer. 5 is preferable, and 0.05 to 0.3 is more preferable.

The refractive index of light having a wavelength of 570 nm of the dielectric material or oxide semiconductor material is preferably 1.3 to 1.8, more preferably 1.35 to 1.6, and still more preferably 1. 35-1.5. When the refractive index of the material constituting the admittance adjusting layer is 1.35 to 1.5, the optical admittance of the electrode substrate for touch panel is easily finely adjusted.

The dielectric material or oxide semiconductor material included in the admittance adjusting layer is not particularly limited, and examples thereof include SiO ₂ , Al ₂ O ₃ , MgF ₂ , Y ₂ O _{3 and the} like. From the viewpoint of finely adjusting the refractive index, the dielectric material is preferably SiO ₂ or MgF ₂ .

The thickness of the admittance adjusting layer is preferably 10 to 150 nm, more preferably 20 to 100 nm. When the thickness of the admittance adjusting layer is 10 nm or more, it is easy to finely adjust the optical admittance on the surface of the electrode substrate for touch panel. On the other hand, if the thickness of the admittance adjusting layer is 150 nm or less, the thickness of the electrode substrate for touch panel is reduced. The thickness of the admittance adjusting layer is measured with an ellipsometer.

Further, when the admittance adjusting layer is a layer formed only in a partial region of the transparent substrate 1, the admittance adjusting layer may be a layer patterned by any method. For example, a layer formed in a pattern by a vapor deposition method by placing a mask having a desired pattern on the deposition surface may be used. Moreover, the layer patterned by the well-known etching method may be sufficient.

2. About the optical admittance of the electrode substrate for touch panels The reflectance R of the surface on the second high refractive index layer side of the electrode substrate for touch panels is the optical admittance y _{env of the} medium on which light is incident and the equivalent admittance Y of the surface of the electrode substrate for touch panels. _Determined from _E. Here, the surface of the electrode substrate for touch panel refers to a member made of an organic resin disposed on the electrode substrate for touch panel or a surface in contact with the environment. The medium on which light is incident refers to a member or environment through which light incident on the electrode substrate for touch panel passes immediately before incident; a member or environment made of an organic resin. The relationship between the optical admittance y _{env of the} medium and the equivalent admittance Y _E of the electrode substrate surface for the touch panel is expressed by the following equation.

Based on the above formula, as | y _env −Y _E | is closer to 0, the reflectance R of the surface of the electrode substrate for touch panel is lowered, and the light transmittance of the electrode substrate for touch panel is increased.

The optical admittance Y _env of the medium is obtained from the ratio (H / E) of the electric field strength and the magnetic field strength, and is the same as the refractive index n _{env of the} medium. On the other hand, the equivalent admittance Y _E is determined from the optical admittance Y of the layers forming the conductive region. For example, when the touch panel electrode substrate is composed of a single layer, the equivalent admittance Y _E is equal to the optical admittance Y (refractive index) of the layer constituting the touch panel electrode substrate.

When the electrode substrate for the touch panel includes a plurality of layers, the optical admittance Y _x (E _x H _x ) of the laminate from the first layer to the x layer is from the first layer to the (x−1) layer. It is represented by the product of the optical admittance Y _x-1 (E _x-1 H _x-1 ) of the laminate and a specific matrix; specifically, it is obtained by the following formula (1) or formula (2) .

When the x-th layer is a layer made of a dielectric material or an oxide semiconductor material

・ When the xth layer is an ideal metal layer

When the x-th layer is the outermost layer, the optical admittance Y _x (E _x H _x ) of the laminate from the transparent substrate to the outermost layer becomes the equivalent admittance Y _{E on the} surface of the touch panel electrode substrate.

FIG. 3 shows an admittance locus at a wavelength of 570 nm of the conductive region (transparent substrate / first high refractive index layer / platinum group-containing layer / conductive layer / second high refractive index layer) of the electrode substrate for touch panel of the present invention. The schematic diagram of is represented. The horizontal axis of the graph is the real part when the optical admittance Y is represented by x + iy; that is, x in the formula, and the vertical axis is the imaginary part of the optical admittance; that is, y in the formula.

The final coordinates (x _E , y _E ) of the admittance locus in FIG. 3; in the graph, the admittance coordinates on the surface on the second high refractive index layer side correspond to the coordinates of the equivalent admittance Y _E. In addition, the platinum group containing layer contained in the electrode substrate for a touch panel of the present invention is sufficiently thin. Therefore, the optical admittance of the platinum group-containing layer can be ignored.

As described above, the reflectance R of the electrode substrate surface for the touch panel is proportional to the difference between the equivalent admittance Y _E and the admittance y _{env of} the medium on which light is incident. Accordingly, it is preferable that the distance between the coordinates (x _E , y _E ) of the equivalent admittance Y _E and the admittance coordinates (n _env , 0) of the medium on which the light is incident is closer. Specifically, these distances ((x _E −n _env ) ² + (y _E ) ² ) ^0.5 are preferably less than 0.5, and more preferably 0.3 or less. If the said distance is less than 0.5, the reflectance R of the electrode substrate surface for touch panels will become small enough, and the electrode substrate for touch panels can be applied to various display panels.

Here, since the electrode substrate for touch panels of this invention satisfy | fills the following 2 points | pieces, the light transmittance of the electrode substrate for touch panels is high.
(I) The conductive layer is sandwiched between the first high refractive index layer and the second high refractive index layer having a relatively high refractive index.
(Ii) The optical admittance at a wavelength of 570 nm of the surface of the conductive layer on the first high refractive index layer side is represented by Y1 (= x ₁ + iy ₁ ), and the optical at the wavelength of 570 nm of the surface of the conductive layer on the second high refractive index layer side. When the admittance is represented by Y2 (= x ₂ + iy ₂ ), one or both of x ₁ and x ₂ are 1.6 or more. The reason will be described below.

A conductive layer containing metal generally has a large value of an imaginary part of optical admittance. Therefore, when a conductive layer is laminated directly on a transparent substrate, the admittance locus greatly moves from the start point (n _sub , 0) of the admittance locus in the direction of the vertical axis (imaginary part). FIG. 4A shows an admittance locus at a wavelength of 570 nm of a touch panel electrode substrate having a transparent substrate / conductive layer / high refractive index layer in this order, and FIG. 4B shows a wavelength of 450 nm, wavelength 570 nm, and wavelength 700 nm of the touch panel electrode substrate. Shows the admittance trajectory. As shown in FIG. 4A, when a conductive layer is laminated directly on a transparent substrate, an admittance locus is formed in the vertical axis (imaginary part) direction from the starting point of the admittance locus (the admittance coordinates (about 1.5, 0) of the transparent substrate). It moves greatly and the absolute value of the imaginary part of the admittance coordinates becomes very large. When the absolute value of the imaginary part of the admittance coordinates increases, even if the high refractive index layer is laminated on the conductive layer, the equivalent admittance Y _E is the admittance coordinates of the medium on which light is incident (if the medium is air) It becomes difficult to approach (1,0).

Furthermore, as shown in FIG. 4A, when a conductive layer is directly laminated on a transparent substrate, the admittance locus is less likely to be line symmetric about the horizontal axis of the graph. The admittance locus at a specific wavelength (570 nm in the present invention) must be line symmetric about the horizontal axis of the graph; as shown in FIG. 4B, equivalent admittance Y _{E at} other wavelengths (for example, 450 nm and 700 nm). The coordinates of are easy to shake greatly. For this reason, a wavelength region having a high reflectance is likely to occur.

On the other hand, when the first high refractive index layer is disposed between the transparent substrate and the conductive layer, the admittance Y1 on one surface of the conductive layer greatly moves in the upper right direction of the graph; the value of y ₁ Becomes larger. At this time, the value of _{x 1} is large, (for example, 1.6 or more), the value of _{y 1} tends to increase.

Then, since the value of y ₁ is large, the conductive layer, even if greatly moved in the negative direction of the admittance locus imaginary part, the absolute value of the imaginary part of Y2 (y ₂₎ is hardly increased. As a result, the coordinates of the equivalent admittance Y _E is, light is likely to approach the admittance coordinates of the medium entering.

Furthermore, when the first high-refractive index layer / conductive layer / second high-refractive index layer are laminated in this order, the admittance locus tends to be line symmetric about the horizontal axis of the graph as shown in FIG. . As a result, in each of the wavelength, the coordinate tends to be constant equivalent admittance Y _E, at any wavelength, sufficient reflectance is low.

Further, the following relational expression is established between the admittance Y at the interface between the layers included in the electrode substrate for touch panel and the electric field strength E of each layer.

Based on the above relational expression, if the admittance Y on the surface of each layer increases, the electric field strength E of each layer decreases. In general, the electric field loss (light absorption) of the conductive layer is particularly large. Accordingly, the real part of the optical admittance Y1 and Y2 of the conductive layer (i.e., x ₁ and x ₂₎ The greater the electric field loss of the conductive layer is reduced, increasing the light transmission of the electrode substrate for a touch panel.

In the electrode substrate for a touch panel of the present invention, either one of x ₁ and x ₂ may be 1.6 or more, but both are preferably 1.6 or more. Further, x ₁ and x ₂ are more preferably 1.8 or more, and further preferably 2.0 or more. The _{x 1} and _{x 2} is preferably 7.0 or less, more preferably 5.5 or less. x ₁ is the refractive index of the first high refractive index layer and is adjusted in such a thickness of the first high refractive index layer. x ₂ is the refractive index of the x ₁ value or a conductive layer, is adjusted by such a thickness of the conductive layer. For example, if and refractive index of the first high refractive index layer is higher, when a certain degree thicker, the value of x ₁ and x ₂ tends to increase.

As described above, admittance locus is preferably a center line of symmetry of the horizontal axis of the graph. For this purpose, a coordinate y ₁ of the imaginary part of the Y1, the coordinate y ₂ of the imaginary part of the Y2, y It is preferable to satisfy ₁ × y ₂ ≦ 0. Furthermore, | y ₁ + y ₂ | is preferably less than 0.8, more preferably 0.5 or less, and still more preferably 0.3 or less. If | y ₁ + y ₂ | is less than 0.8, the admittance trajectory tends to be line symmetric about the horizontal axis of the graph.

3. Regarding Physical Properties of Touch Panel Electrode Substrate As described above, the average absorbance of light at a wavelength of 400 nm to 800 nm of the touch panel electrode substrate of the present invention is 15% or less, more preferably 10% or less, and even more preferably 8 % Or less. Further, the maximum value of the light absorptance of the electrode substrate for touch panel at a wavelength of 400 nm to 800 nm is 15% or less, preferably 10% or less, and more preferably 9% or less. In addition, when the above-mentioned conductive layer is patterned, both the pattern area (conductive area) of the conductive layer and the non-pattern area of the conductive layer satisfy the maximum values of the average absorption rate and the absorption rate. .

Further, the average transmittance of light having a wavelength of 450 nm to 800 nm of the electrode substrate for touch panel is preferably 50% or more, more preferably 70% or more, and further preferably 80% or more. On the other hand, the average reflectance of light having a wavelength of 500 nm to 700 nm of the electrode substrate for touch panel is preferably 20% or less, more preferably 15% or less, and further preferably 10% or less. When the average transmittance of light having the above wavelength is 50% or more and the average reflectance is 20% or less, the electrode substrate for a touch panel can be applied to applications that require high transparency. In addition, when the above-mentioned conductive layer is patterned, it is preferable that both the pattern area (conductive area) of the conductive layer and the non-pattern area of the conductive layer satisfy the average transmittance and the average reflectance. .

The average transmittance and the average reflectance are values measured by allowing measurement light to enter the electrode substrate for touch panel from an angle inclined by 5 ° with respect to the normal of the surface of the electrode substrate for touch panel. The absorptance is calculated from a calculation formula of 100− (transmittance + reflectance).

The touch panel electrode substrate preferably has an a * value and a b * value within ± 30 in the L * a * b * color system in any region, more preferably within ± 5, Preferably it is within ± 3.0, and particularly preferably within ± 2.0. If the a * value and the b * value in the L * a * b * color system are within ± 30, the touch panel electrode substrate is observed as colorless and transparent. The a * value and b * value in the L * a * b * color system are measured with a spectrophotometer.

The surface electrical resistance of the region (conductive region) including the conductive layer of the electrode substrate for touch panel is preferably 30Ω / □ or less, and more preferably 15Ω / □ or less. The electrode substrate for touch panel in which the surface electrical resistance value of the conductive region is 30Ω / □ or less can be applied to a capacitive touch panel. The surface electrical resistance value of the conductive region of the electrode substrate for touch panel is adjusted by the thickness of the conductive layer and the like. The surface electrical resistance value of the electrode substrate for touch panels is measured in accordance with, for example, JIS K7194, ASTM D257, and the like. It is also measured by a commercially available surface electrical resistivity meter.

4). Touch panel and display panel The electrode substrate for a touch panel of the present invention is applied to various touch panels. The touch panel can be various touch sensors, a touch pad, or the like. The touch panel system to which the electrode substrate for a touch panel of the present invention is applied is not particularly limited, and may be, for example, a projected capacitive touch panel, a surface capacitive touch panel, a resistive touch panel, or the like.

As shown in FIG. 5, the projected capacitive touch panel 200 includes two touch panel electrode substrates (100 and 100 ′) described above. The two touch panel electrode substrates (100 and 100 ') are arranged to be stacked. The method for overlaying the two touch panels is not particularly limited, and for example, the two touch panels can be superimposed via the air layer or the adhesive layer 21 so that the surfaces on the second high refractive index layers 5 and 5 ′ face each other.

The adhesive layer 21 is not particularly limited as long as it does not impair the light transmittance of the touch panel, and may be a layer made of a known adhesive (for example, an acrylic adhesive or an epoxy adhesive).

In addition, as shown in FIG. 6A, one touch panel electrode substrate 100 included in the projected capacitive touch panel 200 has a plurality of conductive layers parallel to the Y-axis direction of the touch panel electrode substrate 100. It may be an electrode substrate in which the conductive region a1 (wiring) is arranged. On the other hand, as shown in FIG. 6B, the other touch panel electrode substrate 100 ′ has a plurality of conductive regions a2 (wirings) arranged in parallel to the X-axis direction of the touch panel electrode substrate 100 ′. It can be an electrode substrate. These conductive regions a1 and a2 are each connected to an external detection circuit or the like.

In the projected capacitive touch panel 200, when the surface of the touch panel 200 is touched with a fingertip or the like, the capacitance between the conductive layers 4 and 4 'near the touched area and the finger changes. Then, this change in capacitance is detected by an external detection circuit, and the coordinates (position) touched by the fingertip are specified.

On the other hand, the surface capacitive touch panel 210 includes, for example, the touch panel electrode substrate 100 and a cover layer 14 that protects the surface of the touch panel electrode substrate 100 as shown in FIG. . The surface of the touch panel electrode substrate 100 on the second high refractive index layer 5 side and the cover layer 14 are bonded together via an adhesive layer 21 or the like. In addition, electrode terminals 15 are provided at the four corners of the touch panel 210, and the electrode terminals 15 are connected to an external detection circuit or the like.

The adhesive layer 21 is not particularly limited as long as it does not impair the light transmittance of the touch panel, and may be the same as the adhesive layer 21 of the projected capacitive touch panel. The touch panel electrode substrate 100 included in the surface capacitive touch panel 210 may be an electrode substrate in which the conductive layer 4 is disposed on the entire surface of the transparent substrate 1.

In the touch panel 210, when the surface of the touch panel 210 is touched with a fingertip or the like, the resistance value between each electrode terminal 15 arranged at the four corners and the ground line changes. This change in resistance value is detected by an external detection circuit, and the coordinates (position) touched by the fingertip are specified.

For example, as shown in FIG. 8, the surface capacitive touch panel 220 may include two touch panel electrode substrates (100 and 100 '). The two touch panel electrode substrates (100 and 100 ') are overlapped with each other via an air layer or an adhesive layer 21 so that the surfaces on the second high refractive index layers 5 and 5' side face each other.

The adhesive layer 21 is not particularly limited as long as it does not impair the light transmittance of the touch panel, and may be the same as the adhesive layer 21 of the projected capacitive touch panel. The touch panel electrode substrates 100 and 100 ′ included in the touch panel 220 may be electrode substrates in which the conductive layers 4 and 4 ′ are disposed on the entire surfaces of the transparent substrates 1 and 1 ′. These conductive layers 4 and 4 'are connected to an external detection circuit or the like.

In the touch panel 220, when the surface of the touch panel 220 is touched with a fingertip, the static electricity between the conductive layer 4 included in one touch panel electrode substrate 100 and the conductive layer 4 ′ included in the other touch panel electrode substrate 100 ′. The capacitance changes. This change in capacitance is detected by an external detection circuit (not shown), and the coordinates (position) touched by the fingertip are specified.

The resistive touch panel 230 includes, for example, two touch panel electrode substrates (100 and 100 ') as shown in FIG. The two electrode substrates for touch panels (100 and 100 ') are overlapped with a gap so that, for example, the surfaces on the second high refractive index layers 5 and 5' side face each other. In addition, a plurality of spacers 25 are disposed on the surface of one touch panel electrode substrate 100 ′.

The spacer 25 may be the same as a spacer of a known resistive film type touch panel. The touch- panel electrode substrates 100 and 100 ′ included in the touch panel 230 may be electrode substrates in which the conductive layers 4 and 4 ′ are formed on the entire surfaces of the transparent substrates 1 and 1 ′. These conductive layers 4 and 4 'are connected to an external detection circuit or the like.

In the touch panel 230, when the surface of the touch panel 230 is touched with a fingertip, one of the touch panel electrode substrates 100 is pushed into contact with the other touch panel electrode substrate 100 '. The potential change at this time is detected by an external detection circuit (not shown), and the coordinate (position) touched by the fingertip is specified.

The touch panel of each method described above is applied to various display panels. In the display panel, usually, the touch panel and various display devices are overlapped. The display device combined with the touch panel is not particularly limited, and may be a known display device such as a liquid crystal display device, a plasma display, an organic EL display, and a field emission display (FED).

Hereinafter, the present invention will be described in more detail with reference to examples. However, the scope of the present invention is not limited by this.

[Example 1]
A first high refractive index layer / platinum group-containing layer / conductive layer / second high refractive index layer was laminated in this order on a transparent substrate made of Toyobo PET (Cosmo Shine A4300, thickness 50 μm) by the following method. An admittance locus at a wavelength of 570 nm of the obtained electrode substrate for touch panel is shown in FIG. The thickness of each layer is J. A. Woollam Co. Inc. The measurement was made with a VB-250 VASE ellipsometer manufactured by the manufacturer.

(First high refractive index layer)
On the transparent substrate, L-430S-FHS manufactured by Anerva Co., Ltd. was used. Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target side power 150 W, film formation rate 2.0 Å / s. Sputtered. The target-substrate distance was 86 mm. The obtained first high refractive index layer was 40 nm. The refractive index of light with a wavelength of 570 nm of ITO was 1.80, and the refractive index of light with a wavelength of 570 nm of the first high refractive index layer was also 1.80.

(Platinum group-containing layer)
On the first high refractive index layer, a Pd film was formed by sputtering for 10 seconds using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Inc. to form growth nuclei having an average thickness of 0.1 nm. The average thickness of the growth nuclei was calculated from the film formation rate at the nominal value of the manufacturer of the sputtering apparatus.

(Conductive layer)
On the platinum group-containing layer, Ag-RF was sputtered using L-430S-FHS manufactured by Anelva Co., Ar 20 sccm, sputtering pressure 0.3 Pa, room temperature, target-side power 100 W, and deposition rate 2.5 Å / s. . The target-substrate distance was 86 mm. The obtained conductive layer made of Ag was 6 nm.
Sputtering was performed through a mask having a shielding portion in the shape of an insulating pattern shown in FIG. The line width of the line-shaped shielding part (insulating region) was 30 μm, and the length of one side of the substantially quadrangular opening (conductive region) was 300 μm.

(Second high refractive index layer)
A second high refractive index layer was formed so as to cover the conductive layer in the same manner as the film formation method for the first high refractive index layer described above. The obtained second high refractive index layer was 40 nm. The refractive index of light with a wavelength of 570 nm of ITO was 1.80, and the refractive index of light with a wavelength of 570 nm of the second high refractive index layer was also 1.80.

[Example 2]
A first high refractive index layer / platinum group-containing layer / conductive layer / second high refractive index layer was laminated in this order on a transparent substrate made of Toyobo PET (Cosmo Shine A4300, thickness 50 μm) by the following method.

(First high refractive index layer)
On the transparent substrate, TiO ₂ was deposited by electron beam (EB) with ion assistance at 320 mA and a film formation rate of 3 し な が ら / s using a Gener 1300 manufactured by Optorun. The obtained first high refractive index layer was 15 nm. The ion beam was irradiated at a current of 500 mA, a voltage of 500 V, and an acceleration voltage of 400 V. In the ion beam apparatus, O ₂ gas: 50 sccm and Ar gas: 8 sccm were introduced. The refractive index of light with a wavelength of 570 nm of TiO ₂ was 2.35, and the refractive index of light with a wavelength of 570 nm of the first high refractive index layer was 2.10.

(Platinum group-containing layer and conductive layer)
In the same manner as in Example 1, a platinum group-containing layer and a conductive layer were formed.

(Second high refractive index layer)
A second high refractive index layer was formed so as to cover the conductive layer in the same manner as the film formation method for the first high refractive index layer described above. The obtained second high refractive index layer was 20 nm. The refractive index of light with a wavelength of 570 nm of TiO ₂ was 2.35, and the refractive index of light with a wavelength of 570 nm of the second high refractive index layer was 2.10.

[Example 3]
A touch panel electrode substrate was prepared in the same manner as in Example 1 except that the thickness of the conductive layer was 8 nm.

[Example 4]
A touch panel electrode substrate was prepared in the same manner as in Example 2 except that the thicknesses of the conductive layer, the first high refractive index layer, and the second high refractive index layer were changed to the thicknesses shown in Table 1.

[Example 5]
A first high refractive index layer / platinum group-containing layer / conductive layer / second high refractive index layer was laminated in this order on a transparent substrate made of Toyobo PET (Cosmo Shine A4300, thickness 50 μm) by the following method.

(First high refractive index layer)
On the transparent substrate, L-430S-FHS manufactured by Anelva is used, Ar 20 sccm, O ₂ 1 sccm, sputtering pressure 0.5 Pa, room temperature, target side power 150 W, film formation rate 1.2 成膜 / s, Nb ₂ O ₅ was DC sputtered. The target-substrate distance was 86 mm. The obtained first high refractive index layer was 12 nm. The refractive index of light with a wavelength of 570 nm of Nb ₂ O ₅ was 2.31, and the refractive index of light with a wavelength of 570 nm of the first high refractive index layer was also 2.31.

(Platinum group-containing layer and conductive layer)
A platinum group-containing layer and a conductive layer were formed in the same manner as in Example 1 except that the thickness of the conductive layer was 8 nm.

(Second high refractive index layer)
A second high refractive index layer was formed so as to cover the conductive layer in the same manner as the film formation method for the first high refractive index layer described above. The obtained second high refractive index layer was 18 nm. The refractive index of light with a wavelength of 570 nm of Nb ₂ O ₅ was 2.31, and the refractive index of light with a wavelength of 570 nm of the second high refractive index layer was also 2.31.

[Example 6]
A touch panel electrode substrate was prepared in the same manner as in Example 5 except that the thicknesses of the conductive layer, the first high refractive index layer, and the second high refractive index layer were changed to the thicknesses shown in Table 1.

[Example 7]
A touch panel electrode substrate was prepared in the same manner as in Example 5 except that the thicknesses of the conductive layer, the first high refractive index layer, and the second high refractive index layer were changed to the thicknesses shown in Table 1.

[Example 8]
The first high refractive index layer / platinum group-containing layer / conductive layer / second high refractive index layer / admittance adjusting layer were sequentially laminated on a transparent substrate made of Toyobo PET (Cosmo Shine A4300 thickness 50 μm) by the following method. .

(First high refractive index layer, platinum group-containing layer, conductive layer and second high refractive index layer)
Except for the thickness of the conductive layer, the first high-refractive index layer, and the second high-refractive index layer shown in Table 1, in the same manner as in Example 2, the first high-refractive index layer and the platinum group contained A layer, a conductive layer, and a second high refractive index layer were formed.

(Admittance adjustment layer)
On the second high-refractive index layer, magnesium fluoride (MgF ₂ ) was vapor-deposited by electron beam (EB) at 40 mA and a film formation rate of 3 Å / s using a Gener 1300 manufactured by Optorun. The obtained admittance adjusting layer was 75 nm. In addition, the refractive index of the light with a wavelength of 570 nm of the magnesium fluoride was 1.38, and the refractive index of the light of the admittance adjusting layer was also 1.38.

[Example 9]
The first high refractive index layer / platinum group-containing layer / conductive layer / second high refractive index layer / admittance adjusting layer were sequentially laminated on a transparent substrate made of Toyobo PET (Cosmo Shine A4300 thickness 50 μm) by the following method. .

(First high refractive index layer, platinum group-containing layer, conductive layer and second high refractive index layer)
Except for the thickness of the conductive layer, the first high-refractive index layer, and the second high-refractive index layer shown in Table 1, the first high-refractive index layer and the platinum group contained in the same manner as in Example 5. A layer, a conductive layer, and a second high refractive index layer were formed.

(Admittance adjustment layer)
On the second high-refractive index layer, magnesium fluoride (MgF ₂ ) was vapor-deposited by electron beam (EB) at 40 mA and a film formation rate of 3 Å / s using a Gener 1300 manufactured by Optorun. The obtained admittance adjusting layer was 100 nm. In addition, the refractive index of the light with a wavelength of 570 nm of the magnesium fluoride was 1.38, and the refractive index of the light of the admittance adjusting layer was also 1.38.

[Example 10]
A touch panel electrode substrate was prepared in the same manner as in Example 9 except that the platinum group-containing layer material was Pt.

[Comparative Example 1]
On a transparent substrate made of Toyobo PET (Cosmo Shine A4300 thickness 50 μm), Anelva L-430S-FHS was used, Ar 20 sccm, O ₂ 5 sccm, sputtering pressure 0.3 Pa, room temperature, target side power 150 W, chemical composition ITO was DC sputtered at a film rate of 2.0 Å / s. The target-substrate distance was 86 mm. The obtained ITO film was 100 nm.

[Comparative Example 2]
On a transparent substrate made of Toyobo PET (Cosmo Shine A4300 thickness 50 μm), the same silver nanowire aqueous dispersion as in Example 2 of the above-mentioned prior patent document 2 was spin-coated on the substrate and baked at 120 ° C. for 20 minutes. . The coater used was 1K-DX manufactured by MIKASA, and the thermostat used was ST-120 manufactured by ESPEC. The obtained Ag film was 50 nm.

[Comparative Example 3]
An Ag film was formed on a transparent substrate in the same manner as in Comparative Example 2 except that the thickness of the film containing silver nanowires was 150 nm.

[Comparative Example 4]
An Ag film was formed on a transparent substrate in the same manner as in Comparative Example 2 except that the thickness of the film containing silver nanowires was 200 nm.

[Comparative Example 5]
On a transparent substrate made of Toyobo PET (Cosmo Shine A4300 thickness 50 μm), Anelva L-430S-FHS was used, Ar 20 sccm, sputtering pressure 0.3 Pa, room temperature, target side power 100 W, deposition rate 2. Ag was RF sputtered at 5 Å / s. The target-substrate distance was 86 mm. The obtained conductive layer made of Ag was 8 nm.

[Evaluation]
About the electrode substrate for touch panels of each Example and Comparative Example, specification of optical admittance, average absorption rate and maximum absorption rate of light having a wavelength of 400 nm to 800 nm, light having a wavelength of 400 to 800 nm of the conductive layer included in each electrode substrate for touch panel The plasmon absorption rate, surface electrical resistance of the conductive region, and letter visibility were evaluated as follows. The results are shown in Tables 2 to 3.

(Identification of optical admittance)
The optical admittance of the electrode substrate for touch panels obtained in each of the aforementioned examples was specified. The optical admittance of the surface of the conductive layer on the first high refractive index layer side with a wavelength of 570 nm is Y1 = x ₁ + iy ₁ , and the optical admittance of the surface of the conductive layer on the second high refractive index layer side with wavelength 570 nm is Y2 = x ₂ + iy. ₂ and the time _{(x 1, y} 1), and the value of _(x 2, _{y 2)} are shown in Table 1. _{Also, (x} E, _y E) when the light of the equivalent admittance of wavelength 570nm region (conductive region) surface including the conductive layer expressed in _{Y E = x E + iy E} , and the second high refractive index layer Table 1 shows the refractive index (n _env ) of the member in contact with the surface on the side, and the value of ((x _E −n _env ) ² + (y _E ) ² ) ^0.5 , respectively.

The optical admittance of the layers included in the electrode substrate for touch panel was calculated with the thin film design software Essential Macleod Ver.9.4.375. Note that the thickness d, refractive index n, and absorption coefficient k of each layer necessary for the calculation are as follows. A. Woollam Co. Inc. The measurement was made with a VB-250 VASE ellipsometer manufactured by the manufacturer.

(Measurement method of light absorption rate of conductive region)
Measured light (light with a wavelength of 400 nm to 800 nm) is incident on the conductive region from an angle inclined by 5 ° with respect to the normal of the surface of the electrode substrate for touch panel produced in each example and comparative example. Product: Light transmittance and reflectance were measured with a spectrophotometer U4100. The absorptance was calculated from a formula of 100− (transmittance + reflectance).

(Measurement method of plasmon absorption rate)
The measurement of plasmon absorption was performed by depositing only a conductive layer on a glass substrate under the same conditions as in the examples and comparative examples. Specifically, the measurement was performed as follows.

On a transparent glass substrate, platinum palladium was formed into a film for 0.2 s (0.1 nm) using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Corporation. The average thickness of platinum-palladium was calculated from the film formation rate at the manufacturer's nominal value of the sputtering apparatus. Thereafter, a silver film having a thickness of 20 nm was formed on the substrate to which platinum palladium was adhered using a BMC-800T vapor deposition machine manufactured by SYNCHRON. The resistance heating at this time was 210 A, and the film formation rate was 5 Å / s. The reflectance and transmittance of the obtained metal film were measured and calculated as absorptivity = 100− (transmittance + reflectance). This metal film was assumed to have no plasmon absorption, and the data was used as reference data.

On the other hand, the absorptivity of the conductive layer formed on the glass substrate under the same conditions as in each example was measured. The value obtained by subtracting the reference data from the measurement data was defined as the plasmon absorption rate of the conductive layer. The light transmittance and reflectance were measured with a spectrophotometer U4100 manufactured by Hitachi, Ltd.

(Measurement method of surface electrical resistance of conductive region)
Loresta EP MCP-T360 manufactured by Mitsubishi Chemical Analytech was brought into contact with the conductive region of the electrode substrate for the touch panel, and the surface electrical resistance of the conductive region was measured.

(Evaluation of character visibility)
On the printed paper on which images and text characters were printed, the electrode substrate for a touch panel produced in Examples and Comparative Examples was disposed so that the second high refractive index layer was on the printed paper side. And 20 subjects evaluated the visibility (sharpness, transparency, contrast) of an image and a text character in five steps based on the following reference | standard. The average value of the obtained evaluation is shown in Tables 2 and 3. In Tables 2 and 3, the higher the numerical value, the better the visibility.
5: Sharpness, transparency, and contrast are all high and easy to see 4: Sharpness, transparency, and contrast are high and easy to see 3: Sharpness, transparency, and contrast are inferior It is a level that does not become uncertain 2: Any of sharpness, transparency, and contrast is inferior, and is a slightly worrisome level 1: Any of sharpness, transparency, and contrast is inferior, and is anxious

In the conductors of Comparative Examples 1 to 5, it was impossible to achieve both low surface electric resistance and high character visibility. In particular, as in Comparative Example 5, when the thickness of the conductive layer was reduced, plasmon absorption was likely to occur, and the maximum absorption rate of the conductor was increased.

On the other hand, as shown in Tables 2 and 3, in the electrode substrate for touch panel of the present invention (Examples 1 to 10), even when the thickness of the conductive layer is 10 nm or less, the surface electrical resistance is sufficiently low, Furthermore, the visibility of characters was excellent.

The electrode substrate for a touch panel obtained in the present invention has high light transmittance and further has a low surface electric resistance value in the conductive region. Therefore, it is preferably used for various types of touch panels.

DESCRIPTION OF SYMBOLS 1, 1 'transparent substrate 2 1st high refractive index layer 3 Platinum group containing layer 4, 4' Conductive layer 5, 5 '2nd high refractive index layer 15 Electrode terminal 21 Adhesive layer 25 Spacer 100, 100' Electrode board for touch panels 200, 210, 220, 230 Touch panel

Claims (10)

1. A transparent substrate;
   A first high refractive index layer including a dielectric material or an oxide semiconductor material having a refractive index of light having a wavelength of 570 nm higher than that of light having a wavelength of 570 nm of the transparent substrate;
   A platinum group-containing layer containing one or both of Pt and Pd and having a thickness of 1 nm or less;
   A conductive layer made of metal;
   A second high refractive index layer including a dielectric material or an oxide semiconductor material in which the refractive index of light having a wavelength of 570 nm is higher than the refractive index of light having a wavelength of 570 nm of the transparent substrate. There,
   The conductive layer of the optical admittance Y1 = x 1 + _iy 1 wavelength 570nm of the first high refractive index layer side of the surface _of the optical admittance of wavelength 570nm of the second high refractive index layer side of the surface of the conductive layer Y2 = The electrode substrate for touch panels in which at least one of x ₁ and x ₂ is 1.6 or more when represented by x ₂ + iy ₂ .
2. 2. The electrode substrate for a touch panel according to claim 1, wherein an average absorption rate of light having a wavelength of 400 nm to 800 nm is 10% or less and a maximum value of absorption rate of light having a wavelength of 400 to 800 nm is 15% or less.
3. The electrode substrate for a touch panel according to claim 1, wherein the plasmon absorption rate of the conductive layer is 15% or less over the entire wavelength range of 400 to 800 nm.
4. The electrode substrate for a touch panel according to claim 1, wherein the conductive layer is made of silver or an alloy containing 90 at% or more of silver.
5. One or both of the dielectric material or oxide semiconductor contained in the first high refractive index layer and the dielectric material or oxide semiconductor contained in the second high refractive index layer are TiO ₂ , or _Nb 2 _{O 5,} a touch panel electrode substrate according to claim 1.
6. On the second high refractive index layer, an admittance adjustment layer in which the refractive index of light having a wavelength of 570 nm is lower than the refractive index of light having a wavelength of 570 nm of the dielectric material or oxide semiconductor contained in the second high refractive index layer. The electrode substrate for a touch panel according to claim 1, further comprising:
7. Represents an optical admittance of wavelength 570nm of the second high refractive index layer side of the surface of the electrode substrate for the touch panel in _{Y E = x E + iy E} ,
   When the refractive index of light having a wavelength of 570 nm of a member or environment in contact with the surface on the second high refractive index layer side of the electrode substrate for touch panel is represented by n _env ,
   The electrode substrate for a touch panel according to claim 1, wherein ((x _E −n _env ) ² + (y _E ) ² ) ^0.5 ≦ 0.3 is satisfied.
8. A touch panel including the electrode substrate for a touch panel according to claim 1.
9. Including two electrode substrates for the touch panel,
   The touch panel according to claim 8, wherein the two touch panel electrode substrates are arranged to be stacked.
10. A display panel in which the touch panel according to claim 8 and a display device are laminated.
    

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