WO2014188825A1 - 電子部品装置の製造方法、積層シート、及び、電子部品装置 - Google Patents

電子部品装置の製造方法、積層シート、及び、電子部品装置 Download PDF

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Publication number
WO2014188825A1
WO2014188825A1 PCT/JP2014/060797 JP2014060797W WO2014188825A1 WO 2014188825 A1 WO2014188825 A1 WO 2014188825A1 JP 2014060797 W JP2014060797 W JP 2014060797W WO 2014188825 A1 WO2014188825 A1 WO 2014188825A1
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WIPO (PCT)
Prior art keywords
sealing sheet
electronic component
sheet
sealing
functional layer
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PCT/JP2014/060797
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English (en)
French (fr)
Japanese (ja)
Inventor
裕之 千歳
亀山　工次郎
豊田　英志
石坂　剛
Original Assignee
日東電工株式会社
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Application filed by 日東電工株式会社 filed Critical 日東電工株式会社
Priority to KR1020157031254A priority Critical patent/KR20160013011A/ko
Priority to SG11201509542VA priority patent/SG11201509542VA/en
Priority to CN201480028638.4A priority patent/CN105210184A/zh
Publication of WO2014188825A1 publication Critical patent/WO2014188825A1/ja

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/38—Layered products comprising a layer of synthetic resin comprising epoxy resins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
    • B32B27/20—Layered products comprising a layer of synthetic resin characterised by the use of special additives using fillers, pigments, thixotroping agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/14—Semiconductor wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to a method for manufacturing an electronic component device, a laminated sheet used in the method for manufacturing the electronic component device, and an electronic component device.
  • sealing sheets used for sealing semiconductor elements are known.
  • Patent Document 1 discloses a semiconductor element sealing sheet in which a resin composition layer made of an epoxy resin composition containing a specific component is formed on a base material made of a metal stay.
  • the semiconductor element sealing sheet attached to the suction head is crimped to the semiconductor element disposed in the mold, and the semiconductor element sealing sheet is heated by a heater built in the suction head.
  • the resin composition layer is heated and melted, then the resin composition layer is heated and cured, and then removed from the mold, whereby one side of the semiconductor element is resin-sealed by the sealing resin layer, and the surface of the sealing resin layer It is described that a semiconductor device provided with a metal foil can be obtained.
  • the resin sealing the semiconductor element does not have cracks or chips.
  • the present invention has been made in view of the above-described problems, and an object of the present invention is to provide an electronic component device manufacturing method capable of suppressing the occurrence of cracking or chipping in a resin sealing the electronic component, And it is providing a laminated sheet. Another object of the present invention is to provide an electronic component device in which cracking and chipping of a resin sealing the electronic component is suppressed.
  • the present invention is a method of manufacturing an electronic component device, Step A for preparing a laminate in which the electronic component is mounted on the mounted body; Preparing a laminated sheet having a sealing sheet for sealing an electronic component and a functional layer made of a material different from the sealing sheet; and The laminated body is disposed on a heating plate with the surface on which the electronic component is mounted facing upward, and the laminated sheet is disposed on the surface of the laminated body on which the electronic component is mounted, and the sealing sheet surface is disposed on the surface.
  • Step C to be placed on the lower side, After the step C, it is hot-pressed, and includes the step D of embedding the electronic component in the sealing sheet and sealing it, After the step D, at least a part of the side surface of the functional layer is covered with a resin constituting the sealing sheet.
  • the method includes a step D of hot pressing and embedding the electronic component in the sealing sheet to seal the functional layer. At least a part of the side surface is covered with the resin constituting the sealing sheet. In the resin that seals electronic components, cracks are particularly likely to occur at the corners. However, according to the method for manufacturing an electronic component device according to the present invention, at least a part of the side surface of the functional layer is covered with the resin constituting the sealing sheet. Cracking and chipping can be suppressed.
  • the d after the step D is [0.01 ⁇ h]. It is preferable that it is [0.99 * h] or less.
  • the d after the step D is [0.01 ⁇ h] or more, cracks and chips at the corners of the sealing sheet can be more suitably suppressed.
  • the d after the step D is [0.99 ⁇ h] or less, it is possible to prevent the production apparatus (for example, the upper heating plate) from being contaminated by the resin.
  • the minimum melt viscosity at 0 to 200 ° C. of the sealing sheet is preferably 100000 Pa ⁇ s or less.
  • the melt viscosity at the time of hot pressing is 100,000 Pa ⁇ s or less.
  • seat for sealing and the said functional layer are the same shape by planar view, and the length of the outer periphery of the said lamination sheet is 500 mm or more.
  • the followability of the sealing sheet to the electronic components is higher.
  • the laminate is interposed between the heating plate and the sealing sheet, a plurality of electronic components are sealed with a large-area sealing sheet having an outer peripheral length of 500 mm or more. In addition, sufficient followability of the sealing sheet to the electronic component can be ensured.
  • the length of the outer periphery of the sealing sheet refers to the entire length around the outside of the sealing sheet.
  • the sealing sheet is rectangular, [(vertical length) ⁇ 2 + ( Horizontal length) ⁇ 2].
  • the sealing sheet is circular, it means the length of the entire circumference [2 ⁇ ⁇ ⁇ (radius)].
  • the sealing sheet preferably contains an epoxy resin, a curing agent, and an inorganic filler.
  • the present invention is a laminated sheet, and is characterized by being used in the method for manufacturing an electronic component device described above.
  • the laminate sheet When the laminate sheet is used in the method for manufacturing an electronic component device described above, at least a part of the side surface of the functional layer is covered with the resin constituting the sealing sheet in the step D. Can do. As a result, in the electronic component device manufactured using the laminated sheet, cracks and chips at the corners of the sealing sheet are suppressed.
  • the minimum melt viscosity at 0 to 200 ° C. of the sealing sheet is preferably 100000 Pa ⁇ s or less.
  • the melt viscosity at the time of hot pressing is 100,000 Pa ⁇ s or less.
  • seat for sealing and the said functional layer are the same shape by planar view, and the length of the outer periphery of the said lamination sheet is 500 mm or more.
  • the followability of the sealing sheet to the electronic components is higher.
  • the laminate is interposed between the heating plate and the sealing sheet, a plurality of electronic components are sealed with a large-area sealing sheet having an outer peripheral length of 500 mm or more. In addition, sufficient followability of the sealing sheet to the electronic component can be ensured.
  • the sealing sheet preferably contains an epoxy resin, a curing agent, and an inorganic filler.
  • the present invention also provides an electronic component device, A laminated body in which electronic components are mounted on a mounted body; A sealing sheet sealing the electronic component; A functional layer laminated on the side opposite to the electronic component of the sealing sheet; At least a part of the side surface of the functional layer is covered with a resin constituting the sealing sheet.
  • the side surface of the functional layer is covered with the resin constituting the sealing sheet.
  • the resin that seals electronic components cracks are particularly likely to occur at the corners.
  • the corner portion of the sealing sheet is cracked or chipped. Can be suppressed.
  • the present invention it is possible to provide a method for manufacturing an electronic component device and a laminated sheet that can prevent the resin sealing the electronic component from being cracked or chipped.
  • the manufacturing method of the electronic component device is as follows: Step A for preparing a laminate in which the electronic component is mounted on the mounted body; Preparing a laminated sheet having a sealing sheet for sealing an electronic component and a functional layer made of a material different from the sealing sheet; and The laminated body is disposed on a heating plate with the surface on which the electronic component is mounted facing upward, and the laminated sheet is disposed on the surface of the laminated body on which the electronic component is mounted, and the sealing sheet surface is disposed on the surface.
  • Step C to be placed on the lower side, After the step C, at least a step D in which heat pressing is performed to embed and seal the electronic component in the sealing sheet, After the step D, at least a part of the side surface of the functional layer is covered with a resin constituting the sealing sheet.
  • the electronic component is not particularly limited as long as it is mounted on a mounted body and exhibits a function as an electronic component.
  • a SAW (Surface Acoustic Wave) filter for example, a SAW (Surface Acoustic Wave) filter; MEMS (such as a pressure sensor and a vibration sensor) Micro Electro Mechanical Systems); ICs such as LSI; semiconductor elements such as transistors; capacitors; electronic devices such as resistors.
  • MEMS Surface Acoustic Wave
  • MEMS such as a pressure sensor and a vibration sensor
  • Micro Electro Mechanical Systems Micro Electro Mechanical Systems
  • ICs such as LSI
  • semiconductor elements such as transistors
  • capacitors for example, a resistors.
  • the mounted body is not particularly limited, and examples thereof include a printed wiring board and a semiconductor wafer.
  • a semiconductor element for example, a semiconductor chip
  • a semiconductor wafer is used as the mounted body, and a CoW (chip on wafer) connection is performed.
  • CoW chip on wafer
  • FIG. 1 to 6 are schematic sectional views for explaining a method for manufacturing an electronic component device according to an embodiment of the present invention.
  • FIG. 4B is a partially enlarged view of FIG.
  • a stacked body 20 in which a semiconductor chip 23 is mounted on a semiconductor wafer 22 is prepared (step A). 1 shows a state in which a plurality of semiconductor chips 23 are mounted on the semiconductor wafer 22, the number of electronic components mounted on the mounted body in the present invention may be one. .
  • the semiconductor chip 23 can be formed by dicing a semiconductor wafer on which a circuit is formed by a known method. For mounting the semiconductor chip 23 on the semiconductor wafer 22, a known device such as a flip chip bonder or a die bonder can be used.
  • the semiconductor chip 23 and the semiconductor wafer 22 are electrically connected through protruding electrodes such as bumps (not shown). Further, the distance between the semiconductor chip 23 and the semiconductor wafer 22 can be set as appropriate, and is generally about 15 to 50 ⁇ m. This gap may be filled with sealing resin (underfill).
  • the sealing sheet 10 for sealing the electronic component and the functional layer 12 made of different materials are used.
  • a laminated sheet 8 is prepared (step B).
  • the laminated sheet 8 may be prepared in a state of being laminated on a support such as a polyethylene terephthalate (PET) film with the sealing sheet 10 side as a bonding surface.
  • PET polyethylene terephthalate
  • the support may be subjected to a mold release treatment in order to easily peel off the sealing sheet 10.
  • the lamination sheet in this invention is a sheet
  • sealing sheet 10 contains an epoxy resin and a phenol resin. Thereby, favorable thermosetting is obtained.
  • the epoxy resin is not particularly limited.
  • triphenylmethane type epoxy resin, cresol novolac type epoxy resin, biphenyl type epoxy resin, modified bisphenol A type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, modified bisphenol F type epoxy resin, dicyclopentadiene type Various epoxy resins such as an epoxy resin, a phenol novolac type epoxy resin, and a phenoxy resin can be used. These epoxy resins may be used alone or in combination of two or more.
  • the epoxy equivalent is 150 to 250 and the softening point or the melting point is 50 to 130 ° C., solid at room temperature. From the viewpoint, triphenylmethane type epoxy resin, cresol novolac type epoxy resin, and biphenyl type epoxy resin are more preferable.
  • the phenol resin is not particularly limited as long as it causes a curing reaction with the epoxy resin.
  • a phenol novolac resin, a phenol aralkyl resin, a biphenyl aralkyl resin, a dicyclopentadiene type phenol resin, a cresol novolak resin, a resole resin, or the like is used.
  • These phenolic resins may be used alone or in combination of two or more.
  • phenol resin those having a hydroxyl equivalent weight of 70 to 250 and a softening point of 50 to 110 ° C. are preferably used from the viewpoint of reactivity with the epoxy resin, and phenol phenol is particularly preferable from the viewpoint of high curing reactivity.
  • a novolac resin can be suitably used. From the viewpoint of reliability, low hygroscopic materials such as phenol aralkyl resins and biphenyl aralkyl resins can also be suitably used.
  • the blending ratio of the epoxy resin and the phenol resin is blended so that the total of hydroxyl groups in the phenol resin is 0.7 to 1.5 equivalents with respect to 1 equivalent of the epoxy group in the epoxy resin from the viewpoint of curing reactivity. It is preferable to use 0.9 to 1.2 equivalents.
  • the total content of the epoxy resin and the phenol resin in the sealing sheet 10 is preferably 2.0% by weight or more, and more preferably 3.0% by weight or more. Adhesive force with respect to an electronic component, a to-be-mounted body, etc. is acquired favorably as it is 2.0 weight% or more.
  • the total content of the epoxy resin and the phenol resin in the sealing sheet 10 is preferably 20% by weight or less, and more preferably 10% by weight or less. Hygroscopicity can be reduced as it is 20 weight% or less.
  • the sealing sheet 10 preferably contains a thermoplastic resin. Thereby, the handleability at the time of non-hardening and the low stress property of hardened
  • thermoplastic resin examples include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, heat Plastic polyimide resin, polyamide resin such as 6-nylon and 6,6-nylon, phenoxy resin, acrylic resin, saturated polyester resin such as PET and PBT, polyamideimide resin, fluororesin, styrene-isobutylene-styrene block copolymer, etc. Is mentioned. These thermoplastic resins can be used alone or in combination of two or more. Of these, a styrene-isobutylene-styrene block copolymer is preferable from the viewpoint of low stress and low water absorption.
  • the content of the thermoplastic resin in the sealing sheet 10 is preferably 1.0% by weight or more, and more preferably 1.5% by weight or more.
  • flexibility and flexibility are acquired as it is 1.0 weight% or more.
  • the content of the thermoplastic resin in the sealing sheet 10 is preferably 3.5% by weight or less, and more preferably 3% by weight or less. Adhesiveness with an electronic component or a to-be-mounted body is favorable in it being 3.5 weight% or less.
  • the sealing sheet 10 preferably contains an inorganic filler.
  • the inorganic filler is not particularly limited, and various conventionally known fillers can be used.
  • quartz glass, talc, silica such as fused silica and crystalline silica
  • alumina aluminum nitride
  • nitriding Examples thereof include silicon and boron nitride powders. These may be used alone or in combination of two or more. Among these, silica and alumina are preferable, and silica is more preferable because the linear expansion coefficient can be satisfactorily reduced.
  • silica powder is preferable, and fused silica powder is more preferable.
  • fused silica powder examples include spherical fused silica powder and crushed fused silica powder. From the viewpoint of fluidity, spherical fused silica powder is preferable. Among these, those having an average particle diameter in the range of 10 to 30 ⁇ m are preferable, and those having a mean particle diameter in the range of 15 to 25 ⁇ m are more preferable.
  • the average particle diameter can be derived, for example, by using a sample arbitrarily extracted from the population and measuring it using a laser diffraction / scattering particle size distribution measuring apparatus.
  • the content of the inorganic filler in the sealing sheet 10 is preferably 80 to 95% by weight, more preferably 85 to 90% by weight with respect to the entire sealing sheet 10. If the content of the inorganic filler is 80% by weight or more with respect to the entire sealing sheet 10, long-term reliability can be improved. On the other hand, a softness
  • the sealing sheet 10 contains a curing accelerator.
  • the curing accelerator is not particularly limited as long as it can cure the epoxy resin and the phenol resin, and examples thereof include organophosphorus compounds such as triphenylphosphine and tetraphenylphosphonium tetraphenylborate; 2-phenyl-4, And imidazole compounds such as 5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole.
  • organophosphorus compounds such as triphenylphosphine and tetraphenylphosphonium tetraphenylborate
  • 2-phenyl-4, And imidazole compounds such as 5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole.
  • 2-phenyl-4,5-dihydroxymethylimidazole is preferred because the curing reaction does not proceed rapidly even when the temperature during kneading increases, and the sealing sheet 10 can be satisfactorily produced.
  • the content of the curing accelerator is preferably 0.1 to 5 parts by weight with respect to 100 parts by weight of the total of the epoxy resin and the phenol resin.
  • the sealing sheet 10 preferably contains a flame retardant component. This can reduce the expansion of combustion when ignition occurs due to component short-circuiting or heat generation.
  • a flame retardant component for example, various metal hydroxides such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide, complex metal hydroxides; phosphazene flame retardants, etc. should be used. Can do.
  • the content of the phosphorus element contained in the phosphazene flame retardant is preferably 12% by weight or more.
  • the content of the flame retardant component in the sealing sheet 10 is preferably 10% by weight or more and more preferably 15% by weight or more in the total organic components (excluding the inorganic filler). A flame retardance is favorably acquired as it is 10 weight% or more.
  • the content of the thermoplastic resin in the sealing sheet 10 is preferably 30% by weight or less, and more preferably 25% by weight or less. When the content is 30% by weight or less, there is a tendency that there is little decrease in physical properties of the cured product (specifically, physical properties such as glass transition temperature and high-temperature resin strength).
  • the sealing sheet 10 contains a silane coupling agent.
  • the silane coupling agent is not particularly limited, and examples thereof include 3-glycidoxypropyltrimethoxysilane.
  • the content of the silane coupling agent in the sealing sheet 10 is preferably 0.1 to 3% by weight. When the content is 0.1% by weight or more, sufficient strength of the cured product can be obtained and the water absorption rate can be lowered. If it is 3% by weight or less, the outgas amount can be lowered.
  • the sealing sheet 10 preferably contains a pigment.
  • the pigment is not particularly limited, and examples thereof include carbon black.
  • the content of the pigment in the sealing sheet 10 is preferably 0.1 to 2% by weight. When the content is 0.1% by weight or more, good marking properties can be obtained when marking is performed by laser marking or the like. When the content is 2% by weight or less, a cured product strength is sufficiently obtained.
  • the minimum melt viscosity at 0 to 200 ° C. of the sealing sheet 10 is preferably 100000 Pa ⁇ s or less, and more preferably 50000 Pa ⁇ s or less.
  • the melt viscosity at the time of hot pressing is 100,000 Pa ⁇ s or less.
  • the minimum melt viscosity at 0 to 200 ° C. of the sealing sheet 10 can be controlled by the amount of thermoplastic resin added.
  • the minimum melt viscosity at 0 to 200 ° C. of the sealing sheet 10 is preferably 1000 Pa ⁇ s or more, and more preferably 10,000 Pa ⁇ s or more.
  • the minimum melt viscosity at 0 to 200 ° C. of the sealing sheet 10 is 1000 Pa ⁇ s or more, when the sealing sheet 10 is disposed on the laminate 20, the outer peripheral portion of the sealing sheet 10 (directly below) It is possible to suppress the portion where there is no electronic component) from drooping, and to suppress pressing in a state where air is trapped between the sealing sheet and the mounting substrate. As a result, voids are less likely to occur in the electronic component device obtained after pressing.
  • the minimum melt viscosity at 0 to 200 ° C. of the sealing sheet 10 can be controlled by the addition amount of a thermoplastic resin, a thermosetting resin, an inorganic filler or the like.
  • the encapsulating sheet 10 may have a single layer structure or a multilayer structure in which two or more encapsulating sheets are laminated, but there is no risk of delamination and the sheet thickness is highly uniform.
  • a single layer structure is preferred because it is easy to do.
  • the thickness of the sealing sheet 10 is not particularly limited, but is, for example, 50 ⁇ m to 2000 ⁇ m from the viewpoint of use as a sealing sheet.
  • seat 10 for sealing is not specifically limited, The method of coating the kneaded material obtained by preparing the kneaded material of the resin composition for forming the sheet
  • seat 10 for sealing can be produced without using a solvent, it can suppress that the electronic component (semiconductor chip 23) is influenced by the volatilized solvent.
  • a kneaded product is prepared by melt-kneading each component described below with a known kneader such as a mixing roll, a pressure kneader, or an extruder, and the obtained kneaded product is coated or plastically processed into a sheet. Shape.
  • the temperature is preferably equal to or higher than the softening point of each component described above, for example, 30 to 150 ° C., preferably 40 to 140 ° C., more preferably 60 to 120 in consideration of the thermosetting property of the epoxy resin. ° C.
  • the time is, for example, 1 to 30 minutes, preferably 5 to 15 minutes.
  • the kneading is preferably performed under reduced pressure conditions (under reduced pressure atmosphere). Thereby, while being able to deaerate, the penetration
  • the pressure under reduced pressure is preferably 0.1 kg / cm 2 or less, more preferably 0.05 kg / cm 2 or less.
  • the lower limit of the pressure under reduced pressure is not particularly limited, but is, for example, 1 ⁇ 10 ⁇ 4 kg / cm 2 or more.
  • the kneaded material after melt-kneading is applied in a high temperature state without cooling.
  • the coating method is not particularly limited, and examples thereof include a bar coating method, a knife coating method, and a slot die method.
  • the temperature at the time of coating is preferably not less than the softening point of each component described above, and considering the thermosetting property and moldability of the epoxy resin, for example, 40 to 150 ° C., preferably 50 to 140 ° C., more preferably 70 to 120 ° C.
  • the kneaded material after melt-kneading is plastically processed in a high temperature state without cooling.
  • the plastic working method is not particularly limited, and examples thereof include a flat plate pressing method, a T-die extrusion method, a screw die extrusion method, a roll rolling method, a roll kneading method, an inflation extrusion method, a coextrusion method, and a calendar molding method.
  • the plastic working temperature is preferably not less than the softening point of each component described above, and is 40 to 150 ° C., preferably 50 to 140 ° C., more preferably 70 to 120 ° C. in consideration of the thermosetting property and moldability of the epoxy resin. is there.
  • the sealing sheet 10 can also be obtained by dissolving and dispersing a resin or the like for forming the sealing sheet 10 in an appropriate solvent to adjust the varnish and coating the varnish.
  • the functional layer 8 has a function of suppressing cracking and chipping of corner portions of the sealing sheet 10 when the semiconductor chip 23 is sealed by the sealing sheet 10 and a function of preventing warping after sealing.
  • a metal foil or a plastic plate can be suitably used as a material constituting the functional layer 8.
  • the metal include 42 nickel-iron alloy (42 alloy), stainless steel such as SUS304, copper, aluminum, nickel, and the like.
  • 42 alloy nickel-iron alloy
  • stainless steel such as SUS304
  • copper aluminum, nickel, and the like.
  • copper is preferable from the viewpoint of improving heat dissipation.
  • the material for the plastic plate examples include olefin resins such as polyethylene (PE), polypropylene (PP), and ethylene-propylene copolymer; ethylene-vinyl acetate copolymer (EVA), ionomer resin, and ethylene- (meta ) Copolymers containing ethylene as a monomer component such as acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer; polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polybutylene Polyester such as terephthalate (PBT); acrylic resin; polyvinyl chloride (PVC); polyurethane; polycarbonate; polyphenylene sulfide (PPS); amide resin such as polyamide (nylon), wholly aromatic polyamide (aramid); Ether ketone (PEEK); polyimides; polyetherimides; polyvinylidene chloride; ABS (acrylonitrile - butadiene -
  • the thickness of the functional layer 8 is preferably 50 to 5000 ⁇ m, more preferably 100 to 1000 ⁇ m. By setting the thickness of the functional layer 8 to 50 ⁇ m or more, warping after sealing can be alleviated, and by setting the thickness to 5000 ⁇ m or less, heat can be easily transferred to the sealing sheet during pressing, and the electronic component is embedded. Can be improved.
  • the sealing sheet 10 and the functional layer 7 have the same shape in a plan view, and the length of the outer periphery of the laminated sheet 8 is preferably 500 mm or more, and more preferably 800 mm or more.
  • the upper limit of the outer periphery length of the lamination sheet 8 is not specifically limited, Considering a practical range, it can be 3000 mm or less, for example.
  • the peripheral length of the plurality of semiconductor chips 23 is as large as 500 mm or more. Even when sealing with the sealing sheet 10 having an area, it is possible to ensure sufficient followability of the sealing sheet 10 to the semiconductor chip 23.
  • the laminated sheet 8 is obtained by laminating the sealing sheet 10 and the functional layer 8.
  • the lamination method is not particularly limited.
  • the sealing sheet 10 and the functional layer 8 are prepared separately, and the sealing sheet is formed on the functional layer 8 by bonding them together by pressure bonding or the like.
  • a method of coating a kneaded material for the purpose for example,
  • step C the laminated body 20 may be first arranged on the lower heating plate 32, and then the laminated sheet 8 may be arranged on the laminated body 20, and the laminated sheet 8 is laminated on the laminated body 20 first. Then, a laminate in which the laminate 20 and the laminate sheet 8 are laminated may be disposed on the lower heating plate 32.
  • the semiconductor chip 23 (electronic component) is embedded in the sealing sheet 10 by hot pressing with the lower heating plate 32 and the upper heating plate 34 (steps). D).
  • the sealing sheet 10 functions as a sealing resin for protecting the semiconductor chip 23 and its accompanying elements from the external environment. Thereby, the structure 26 in which the semiconductor chip 23 mounted on the semiconductor wafer 22 is embedded in the sealing sheet 10 is obtained.
  • the temperature is, for example, 40 to 100 ° C., preferably 50 to 90 ° C.
  • the pressure is, for example, 0.1 to 10 MPa, preferably Is 0.5 to 8 MPa
  • the time is, for example, 0.3 to 10 minutes, preferably 0.5 to 5 minutes.
  • the decompression conditions include, for example, a pressure of 0.1 to 5 kPa, preferably 0.1 to 100 Pa, and a decompression holding time (a time from the start of decompression to the start of press)) of, for example, 5 to 600 seconds. Preferably, it is 10 to 300 seconds.
  • step D that is, after the semiconductor chip 23 (electronic component) is embedded in the sealing sheet 10, at least a part of the side surface of the functional layer 8 is covered with the resin constituting the sealing sheet 10 ( (Refer FIG.4 (b)).
  • the resin constituting the sealing sheet 10 (Refer FIG.4 (b)).
  • a part of the resin constituting the sealing sheet 10 is pushed out in the lateral direction by the pressure when the semiconductor chip 23 (electronic component) is embedded in the sealing sheet 10, and the functional layer 8 This is obtained as a result of being partially embedded in the sealing sheet 10.
  • the thickness of the functional layer 8 after the step D is h, and the thickness of the portion of the functional layer 8 covered with the resin (the portion covered with the resin constituting the sealing sheet 10) is set.
  • the d after the step D is preferably [0.01 ⁇ h] or more, and more preferably [0.05 ⁇ h] or more. Further, the d after the step D is preferably [0.99 ⁇ h] or less, and more preferably [0.50 ⁇ h] or less.
  • the d after the step D is [0.01 ⁇ h] or more, cracks and chips at the corners of the sealing sheet can be more suitably suppressed.
  • d after the step D is [0.99 ⁇ h] or less, it is possible to prevent the manufacturing apparatus (for example, the upper heating plate 34) from being contaminated by the resin.
  • the numerical value of d after the process D can be controlled by the conditions (for example, pressure and pressurization time) when the process D is performed and the selection of the resin constituting the sealing sheet 10.
  • the electronic sheet device 28 is formed by thermosetting the sealing sheet 10 (see FIG. 5). Specifically, for example, the sealing body 28 is obtained by heating the entire structure 26 in which the semiconductor chip 23 mounted on the semiconductor wafer 22 is embedded in the sealing sheet 10.
  • the heating temperature is preferably 100 ° C or higher, more preferably 120 ° C or higher.
  • the upper limit of the heating temperature is preferably 200 ° C. or lower, more preferably 180 ° C. or lower.
  • the heating time is preferably 10 minutes or more, more preferably 30 minutes or more.
  • the upper limit of the heating time is preferably 180 minutes or less, more preferably 120 minutes or less.
  • you may pressurize as needed Preferably it is 0.1 Mpa or more, More preferably, it is 0.5 Mpa or more.
  • the upper limit is preferably 10 MPa or less, more preferably 5 MPa or less.
  • the sealing body 28 may be diced (see FIG. 6).
  • the electronic component device 29 in units of the semiconductor chip 23 can be obtained.
  • rewiring and bumps are formed on the electronic component device 29 (on the surface of the semiconductor wafer 22 opposite to the semiconductor chip 23) and mounted on a separate substrate (not shown).
  • a substrate mounting process can be performed.
  • a known device such as a flip chip bonder or a die bonder can be used.
  • FOWLP fan-out type wafer level package
  • the method includes the step D of hot pressing to embed the semiconductor chip 23 in the sealing sheet 10 and seal the function. At least a part of the side surface of the layer 8 is covered with a resin constituting the sealing sheet 10. In the resin for sealing the semiconductor chip 23, cracks are particularly likely to occur at the corners. However, according to the method for manufacturing the electronic component device according to the present embodiment, at least a part of the side surface of the functional layer 8 is covered with the resin that constitutes the sealing sheet 10, and thus the corners of the sealing sheet 10. It is possible to suppress cracking and chipping of the part.
  • the present invention is not limited to this example, and the electronic component other than the semiconductor chip is used. Even when a thing other than a semiconductor wafer is used as the mounted body, the manufacturing method of the electronic component device can be applied.
  • Epoxy resin a YSLV-80XY manufactured by Nippon Steel Chemical Co., Ltd. (bisphenol F type epoxy resin, epkin equivalent 200 g / eq, softening point 80 ° C.)
  • Phenol resin a MEH-7851-SS manufactured by Meiwa Kasei Co., Ltd. (phenol resin having a biphenylaralkyl skeleton, hydroxyl group equivalent 203 g / eq, softening point 67 ° C.)
  • Curing accelerator a 2PHZ-PW (2-phenyl-4,5-dihydroxymethylimidazole) manufactured by Shikoku Kasei Kogyo Co., Ltd.
  • Thermoplastic resin a SIBSTER 072T (styrene-isobutylene-styrene block copolymer) manufactured by Kaneka Corporation
  • the measurement conditions were a heating rate of 10 ° C./min, a strain of 20%, and a frequency of 0.1 Hz.
  • the functional layer was affixed on the sealing sheet of an Example and a comparative example, and the lamination sheet was obtained.
  • the functional layer used was common to the examples and comparative examples. Specifically, a copper foil having a circular shape and a thickness of 50 ⁇ m was used. Table 1 shows the diameter and outer peripheral length of the functional layer. At the time of attachment, the attachment was performed so that the center point of the sealing sheet and the functional layer coincided in plan view.
  • a board on which electronic components were mounted was prepared.
  • a semiconductor wafer having a diameter of 300 mm and a thickness of 700 ⁇ m was used.
  • the electronic component uses a semiconductor chip having a length of 10 mm, a width of 10 mm, and a thickness of 500 ⁇ m, and an interval of 10 mm (distance between the end of one electronic component and the end of the next electronic component) is formed on the substrate. It was mounted in 14 vertical x 14 horizontal. The height of the pump is 50 ⁇ m.
  • the substrate is placed on the lower heating plate of the instantaneous vacuum laminating apparatus VS008-1515 (manufactured by Mikado Technos Co., Ltd.) with the surface on which the electronic components are mounted facing up, and the laminated sheet is sealed thereon
  • the sheet was placed with the sheet surface facing down. Then, it hot-pressed under pressure reduction.
  • the hot press conditions are as shown in Table 1. After hot pressing, it was heated in an oven at 150 ° C. for 1 hour. Then, it cooled naturally to room temperature (23 degreeC), and was set as the sample for evaluation.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Laminated Bodies (AREA)
PCT/JP2014/060797 2013-05-23 2014-04-16 電子部品装置の製造方法、積層シート、及び、電子部品装置 WO2014188825A1 (ja)

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SG11201509542VA SG11201509542VA (en) 2013-05-23 2014-04-16 Method for manufacturing electronic component device, laminated sheet, and electronic component device
CN201480028638.4A CN105210184A (zh) 2013-05-23 2014-04-16 电子部件装置的制造方法、层叠片、以及电子部件装置

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JP6597471B2 (ja) 2016-05-02 2019-10-30 信越化学工業株式会社 大面積の半導体素子搭載基材を封止する方法
CN109155256B (zh) * 2016-05-25 2022-06-24 昭和电工材料株式会社 密封结构体及其制造方法、以及密封材
JP6520872B2 (ja) 2016-09-01 2019-05-29 信越化学工業株式会社 半導体封止用熱硬化性樹脂組成物
JP2018064054A (ja) * 2016-10-14 2018-04-19 日立化成株式会社 封止材、及び、封止構造体の製造方法
US11799442B2 (en) 2017-09-29 2023-10-24 Nagase Chemtex Corporation Manufacturing method of mounting structure, and laminate sheet therefor
JP6718106B2 (ja) * 2017-12-14 2020-07-08 ナガセケムテックス株式会社 実装構造体の製造方法
CN116888714A (zh) * 2021-02-01 2023-10-13 长濑化成株式会社 电子部件安装基板的密封方法及热固化性片材

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TW201508844A (zh) 2015-03-01
KR20160013011A (ko) 2016-02-03

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