WO2014188825A1 - Electronic-component-device manufacturing method, laminated sheet, and electronic-component device - Google Patents

Electronic-component-device manufacturing method, laminated sheet, and electronic-component device Download PDF

Info

Publication number
WO2014188825A1
WO2014188825A1 PCT/JP2014/060797 JP2014060797W WO2014188825A1 WO 2014188825 A1 WO2014188825 A1 WO 2014188825A1 JP 2014060797 W JP2014060797 W JP 2014060797W WO 2014188825 A1 WO2014188825 A1 WO 2014188825A1
Authority
WO
WIPO (PCT)
Prior art keywords
sealing sheet
electronic component
sheet
sealing
functional layer
Prior art date
Application number
PCT/JP2014/060797
Other languages
French (fr)
Japanese (ja)
Inventor
裕之 千歳
亀山　工次郎
豊田　英志
石坂　剛
Original Assignee
日東電工株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日東電工株式会社 filed Critical 日東電工株式会社
Priority to KR1020157031254A priority Critical patent/KR20160013011A/en
Priority to SG11201509542VA priority patent/SG11201509542VA/en
Priority to CN201480028638.4A priority patent/CN105210184A/en
Publication of WO2014188825A1 publication Critical patent/WO2014188825A1/en

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/38—Layered products comprising a layer of synthetic resin comprising epoxy resins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
    • B32B27/20—Layered products comprising a layer of synthetic resin characterised by the use of special additives using fillers, pigments, thixotroping agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/14—Semiconductor wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to a method for manufacturing an electronic component device, a laminated sheet used in the method for manufacturing the electronic component device, and an electronic component device.
  • sealing sheets used for sealing semiconductor elements are known.
  • Patent Document 1 discloses a semiconductor element sealing sheet in which a resin composition layer made of an epoxy resin composition containing a specific component is formed on a base material made of a metal stay.
  • the semiconductor element sealing sheet attached to the suction head is crimped to the semiconductor element disposed in the mold, and the semiconductor element sealing sheet is heated by a heater built in the suction head.
  • the resin composition layer is heated and melted, then the resin composition layer is heated and cured, and then removed from the mold, whereby one side of the semiconductor element is resin-sealed by the sealing resin layer, and the surface of the sealing resin layer It is described that a semiconductor device provided with a metal foil can be obtained.
  • the resin sealing the semiconductor element does not have cracks or chips.
  • the present invention has been made in view of the above-described problems, and an object of the present invention is to provide an electronic component device manufacturing method capable of suppressing the occurrence of cracking or chipping in a resin sealing the electronic component, And it is providing a laminated sheet. Another object of the present invention is to provide an electronic component device in which cracking and chipping of a resin sealing the electronic component is suppressed.
  • the present invention is a method of manufacturing an electronic component device, Step A for preparing a laminate in which the electronic component is mounted on the mounted body; Preparing a laminated sheet having a sealing sheet for sealing an electronic component and a functional layer made of a material different from the sealing sheet; and The laminated body is disposed on a heating plate with the surface on which the electronic component is mounted facing upward, and the laminated sheet is disposed on the surface of the laminated body on which the electronic component is mounted, and the sealing sheet surface is disposed on the surface.
  • Step C to be placed on the lower side, After the step C, it is hot-pressed, and includes the step D of embedding the electronic component in the sealing sheet and sealing it, After the step D, at least a part of the side surface of the functional layer is covered with a resin constituting the sealing sheet.
  • the method includes a step D of hot pressing and embedding the electronic component in the sealing sheet to seal the functional layer. At least a part of the side surface is covered with the resin constituting the sealing sheet. In the resin that seals electronic components, cracks are particularly likely to occur at the corners. However, according to the method for manufacturing an electronic component device according to the present invention, at least a part of the side surface of the functional layer is covered with the resin constituting the sealing sheet. Cracking and chipping can be suppressed.
  • the d after the step D is [0.01 ⁇ h]. It is preferable that it is [0.99 * h] or less.
  • the d after the step D is [0.01 ⁇ h] or more, cracks and chips at the corners of the sealing sheet can be more suitably suppressed.
  • the d after the step D is [0.99 ⁇ h] or less, it is possible to prevent the production apparatus (for example, the upper heating plate) from being contaminated by the resin.
  • the minimum melt viscosity at 0 to 200 ° C. of the sealing sheet is preferably 100000 Pa ⁇ s or less.
  • the melt viscosity at the time of hot pressing is 100,000 Pa ⁇ s or less.
  • seat for sealing and the said functional layer are the same shape by planar view, and the length of the outer periphery of the said lamination sheet is 500 mm or more.
  • the followability of the sealing sheet to the electronic components is higher.
  • the laminate is interposed between the heating plate and the sealing sheet, a plurality of electronic components are sealed with a large-area sealing sheet having an outer peripheral length of 500 mm or more. In addition, sufficient followability of the sealing sheet to the electronic component can be ensured.
  • the length of the outer periphery of the sealing sheet refers to the entire length around the outside of the sealing sheet.
  • the sealing sheet is rectangular, [(vertical length) ⁇ 2 + ( Horizontal length) ⁇ 2].
  • the sealing sheet is circular, it means the length of the entire circumference [2 ⁇ ⁇ ⁇ (radius)].
  • the sealing sheet preferably contains an epoxy resin, a curing agent, and an inorganic filler.
  • the present invention is a laminated sheet, and is characterized by being used in the method for manufacturing an electronic component device described above.
  • the laminate sheet When the laminate sheet is used in the method for manufacturing an electronic component device described above, at least a part of the side surface of the functional layer is covered with the resin constituting the sealing sheet in the step D. Can do. As a result, in the electronic component device manufactured using the laminated sheet, cracks and chips at the corners of the sealing sheet are suppressed.
  • the minimum melt viscosity at 0 to 200 ° C. of the sealing sheet is preferably 100000 Pa ⁇ s or less.
  • the melt viscosity at the time of hot pressing is 100,000 Pa ⁇ s or less.
  • seat for sealing and the said functional layer are the same shape by planar view, and the length of the outer periphery of the said lamination sheet is 500 mm or more.
  • the followability of the sealing sheet to the electronic components is higher.
  • the laminate is interposed between the heating plate and the sealing sheet, a plurality of electronic components are sealed with a large-area sealing sheet having an outer peripheral length of 500 mm or more. In addition, sufficient followability of the sealing sheet to the electronic component can be ensured.
  • the sealing sheet preferably contains an epoxy resin, a curing agent, and an inorganic filler.
  • the present invention also provides an electronic component device, A laminated body in which electronic components are mounted on a mounted body; A sealing sheet sealing the electronic component; A functional layer laminated on the side opposite to the electronic component of the sealing sheet; At least a part of the side surface of the functional layer is covered with a resin constituting the sealing sheet.
  • the side surface of the functional layer is covered with the resin constituting the sealing sheet.
  • the resin that seals electronic components cracks are particularly likely to occur at the corners.
  • the corner portion of the sealing sheet is cracked or chipped. Can be suppressed.
  • the present invention it is possible to provide a method for manufacturing an electronic component device and a laminated sheet that can prevent the resin sealing the electronic component from being cracked or chipped.
  • the manufacturing method of the electronic component device is as follows: Step A for preparing a laminate in which the electronic component is mounted on the mounted body; Preparing a laminated sheet having a sealing sheet for sealing an electronic component and a functional layer made of a material different from the sealing sheet; and The laminated body is disposed on a heating plate with the surface on which the electronic component is mounted facing upward, and the laminated sheet is disposed on the surface of the laminated body on which the electronic component is mounted, and the sealing sheet surface is disposed on the surface.
  • Step C to be placed on the lower side, After the step C, at least a step D in which heat pressing is performed to embed and seal the electronic component in the sealing sheet, After the step D, at least a part of the side surface of the functional layer is covered with a resin constituting the sealing sheet.
  • the electronic component is not particularly limited as long as it is mounted on a mounted body and exhibits a function as an electronic component.
  • a SAW (Surface Acoustic Wave) filter for example, a SAW (Surface Acoustic Wave) filter; MEMS (such as a pressure sensor and a vibration sensor) Micro Electro Mechanical Systems); ICs such as LSI; semiconductor elements such as transistors; capacitors; electronic devices such as resistors.
  • MEMS Surface Acoustic Wave
  • MEMS such as a pressure sensor and a vibration sensor
  • Micro Electro Mechanical Systems Micro Electro Mechanical Systems
  • ICs such as LSI
  • semiconductor elements such as transistors
  • capacitors for example, a resistors.
  • the mounted body is not particularly limited, and examples thereof include a printed wiring board and a semiconductor wafer.
  • a semiconductor element for example, a semiconductor chip
  • a semiconductor wafer is used as the mounted body, and a CoW (chip on wafer) connection is performed.
  • CoW chip on wafer
  • FIG. 1 to 6 are schematic sectional views for explaining a method for manufacturing an electronic component device according to an embodiment of the present invention.
  • FIG. 4B is a partially enlarged view of FIG.
  • a stacked body 20 in which a semiconductor chip 23 is mounted on a semiconductor wafer 22 is prepared (step A). 1 shows a state in which a plurality of semiconductor chips 23 are mounted on the semiconductor wafer 22, the number of electronic components mounted on the mounted body in the present invention may be one. .
  • the semiconductor chip 23 can be formed by dicing a semiconductor wafer on which a circuit is formed by a known method. For mounting the semiconductor chip 23 on the semiconductor wafer 22, a known device such as a flip chip bonder or a die bonder can be used.
  • the semiconductor chip 23 and the semiconductor wafer 22 are electrically connected through protruding electrodes such as bumps (not shown). Further, the distance between the semiconductor chip 23 and the semiconductor wafer 22 can be set as appropriate, and is generally about 15 to 50 ⁇ m. This gap may be filled with sealing resin (underfill).
  • the sealing sheet 10 for sealing the electronic component and the functional layer 12 made of different materials are used.
  • a laminated sheet 8 is prepared (step B).
  • the laminated sheet 8 may be prepared in a state of being laminated on a support such as a polyethylene terephthalate (PET) film with the sealing sheet 10 side as a bonding surface.
  • PET polyethylene terephthalate
  • the support may be subjected to a mold release treatment in order to easily peel off the sealing sheet 10.
  • the lamination sheet in this invention is a sheet
  • sealing sheet 10 contains an epoxy resin and a phenol resin. Thereby, favorable thermosetting is obtained.
  • the epoxy resin is not particularly limited.
  • triphenylmethane type epoxy resin, cresol novolac type epoxy resin, biphenyl type epoxy resin, modified bisphenol A type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, modified bisphenol F type epoxy resin, dicyclopentadiene type Various epoxy resins such as an epoxy resin, a phenol novolac type epoxy resin, and a phenoxy resin can be used. These epoxy resins may be used alone or in combination of two or more.
  • the epoxy equivalent is 150 to 250 and the softening point or the melting point is 50 to 130 ° C., solid at room temperature. From the viewpoint, triphenylmethane type epoxy resin, cresol novolac type epoxy resin, and biphenyl type epoxy resin are more preferable.
  • the phenol resin is not particularly limited as long as it causes a curing reaction with the epoxy resin.
  • a phenol novolac resin, a phenol aralkyl resin, a biphenyl aralkyl resin, a dicyclopentadiene type phenol resin, a cresol novolak resin, a resole resin, or the like is used.
  • These phenolic resins may be used alone or in combination of two or more.
  • phenol resin those having a hydroxyl equivalent weight of 70 to 250 and a softening point of 50 to 110 ° C. are preferably used from the viewpoint of reactivity with the epoxy resin, and phenol phenol is particularly preferable from the viewpoint of high curing reactivity.
  • a novolac resin can be suitably used. From the viewpoint of reliability, low hygroscopic materials such as phenol aralkyl resins and biphenyl aralkyl resins can also be suitably used.
  • the blending ratio of the epoxy resin and the phenol resin is blended so that the total of hydroxyl groups in the phenol resin is 0.7 to 1.5 equivalents with respect to 1 equivalent of the epoxy group in the epoxy resin from the viewpoint of curing reactivity. It is preferable to use 0.9 to 1.2 equivalents.
  • the total content of the epoxy resin and the phenol resin in the sealing sheet 10 is preferably 2.0% by weight or more, and more preferably 3.0% by weight or more. Adhesive force with respect to an electronic component, a to-be-mounted body, etc. is acquired favorably as it is 2.0 weight% or more.
  • the total content of the epoxy resin and the phenol resin in the sealing sheet 10 is preferably 20% by weight or less, and more preferably 10% by weight or less. Hygroscopicity can be reduced as it is 20 weight% or less.
  • the sealing sheet 10 preferably contains a thermoplastic resin. Thereby, the handleability at the time of non-hardening and the low stress property of hardened
  • thermoplastic resin examples include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, heat Plastic polyimide resin, polyamide resin such as 6-nylon and 6,6-nylon, phenoxy resin, acrylic resin, saturated polyester resin such as PET and PBT, polyamideimide resin, fluororesin, styrene-isobutylene-styrene block copolymer, etc. Is mentioned. These thermoplastic resins can be used alone or in combination of two or more. Of these, a styrene-isobutylene-styrene block copolymer is preferable from the viewpoint of low stress and low water absorption.
  • the content of the thermoplastic resin in the sealing sheet 10 is preferably 1.0% by weight or more, and more preferably 1.5% by weight or more.
  • flexibility and flexibility are acquired as it is 1.0 weight% or more.
  • the content of the thermoplastic resin in the sealing sheet 10 is preferably 3.5% by weight or less, and more preferably 3% by weight or less. Adhesiveness with an electronic component or a to-be-mounted body is favorable in it being 3.5 weight% or less.
  • the sealing sheet 10 preferably contains an inorganic filler.
  • the inorganic filler is not particularly limited, and various conventionally known fillers can be used.
  • quartz glass, talc, silica such as fused silica and crystalline silica
  • alumina aluminum nitride
  • nitriding Examples thereof include silicon and boron nitride powders. These may be used alone or in combination of two or more. Among these, silica and alumina are preferable, and silica is more preferable because the linear expansion coefficient can be satisfactorily reduced.
  • silica powder is preferable, and fused silica powder is more preferable.
  • fused silica powder examples include spherical fused silica powder and crushed fused silica powder. From the viewpoint of fluidity, spherical fused silica powder is preferable. Among these, those having an average particle diameter in the range of 10 to 30 ⁇ m are preferable, and those having a mean particle diameter in the range of 15 to 25 ⁇ m are more preferable.
  • the average particle diameter can be derived, for example, by using a sample arbitrarily extracted from the population and measuring it using a laser diffraction / scattering particle size distribution measuring apparatus.
  • the content of the inorganic filler in the sealing sheet 10 is preferably 80 to 95% by weight, more preferably 85 to 90% by weight with respect to the entire sealing sheet 10. If the content of the inorganic filler is 80% by weight or more with respect to the entire sealing sheet 10, long-term reliability can be improved. On the other hand, a softness
  • the sealing sheet 10 contains a curing accelerator.
  • the curing accelerator is not particularly limited as long as it can cure the epoxy resin and the phenol resin, and examples thereof include organophosphorus compounds such as triphenylphosphine and tetraphenylphosphonium tetraphenylborate; 2-phenyl-4, And imidazole compounds such as 5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole.
  • organophosphorus compounds such as triphenylphosphine and tetraphenylphosphonium tetraphenylborate
  • 2-phenyl-4, And imidazole compounds such as 5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole.
  • 2-phenyl-4,5-dihydroxymethylimidazole is preferred because the curing reaction does not proceed rapidly even when the temperature during kneading increases, and the sealing sheet 10 can be satisfactorily produced.
  • the content of the curing accelerator is preferably 0.1 to 5 parts by weight with respect to 100 parts by weight of the total of the epoxy resin and the phenol resin.
  • the sealing sheet 10 preferably contains a flame retardant component. This can reduce the expansion of combustion when ignition occurs due to component short-circuiting or heat generation.
  • a flame retardant component for example, various metal hydroxides such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide, complex metal hydroxides; phosphazene flame retardants, etc. should be used. Can do.
  • the content of the phosphorus element contained in the phosphazene flame retardant is preferably 12% by weight or more.
  • the content of the flame retardant component in the sealing sheet 10 is preferably 10% by weight or more and more preferably 15% by weight or more in the total organic components (excluding the inorganic filler). A flame retardance is favorably acquired as it is 10 weight% or more.
  • the content of the thermoplastic resin in the sealing sheet 10 is preferably 30% by weight or less, and more preferably 25% by weight or less. When the content is 30% by weight or less, there is a tendency that there is little decrease in physical properties of the cured product (specifically, physical properties such as glass transition temperature and high-temperature resin strength).
  • the sealing sheet 10 contains a silane coupling agent.
  • the silane coupling agent is not particularly limited, and examples thereof include 3-glycidoxypropyltrimethoxysilane.
  • the content of the silane coupling agent in the sealing sheet 10 is preferably 0.1 to 3% by weight. When the content is 0.1% by weight or more, sufficient strength of the cured product can be obtained and the water absorption rate can be lowered. If it is 3% by weight or less, the outgas amount can be lowered.
  • the sealing sheet 10 preferably contains a pigment.
  • the pigment is not particularly limited, and examples thereof include carbon black.
  • the content of the pigment in the sealing sheet 10 is preferably 0.1 to 2% by weight. When the content is 0.1% by weight or more, good marking properties can be obtained when marking is performed by laser marking or the like. When the content is 2% by weight or less, a cured product strength is sufficiently obtained.
  • the minimum melt viscosity at 0 to 200 ° C. of the sealing sheet 10 is preferably 100000 Pa ⁇ s or less, and more preferably 50000 Pa ⁇ s or less.
  • the melt viscosity at the time of hot pressing is 100,000 Pa ⁇ s or less.
  • the minimum melt viscosity at 0 to 200 ° C. of the sealing sheet 10 can be controlled by the amount of thermoplastic resin added.
  • the minimum melt viscosity at 0 to 200 ° C. of the sealing sheet 10 is preferably 1000 Pa ⁇ s or more, and more preferably 10,000 Pa ⁇ s or more.
  • the minimum melt viscosity at 0 to 200 ° C. of the sealing sheet 10 is 1000 Pa ⁇ s or more, when the sealing sheet 10 is disposed on the laminate 20, the outer peripheral portion of the sealing sheet 10 (directly below) It is possible to suppress the portion where there is no electronic component) from drooping, and to suppress pressing in a state where air is trapped between the sealing sheet and the mounting substrate. As a result, voids are less likely to occur in the electronic component device obtained after pressing.
  • the minimum melt viscosity at 0 to 200 ° C. of the sealing sheet 10 can be controlled by the addition amount of a thermoplastic resin, a thermosetting resin, an inorganic filler or the like.
  • the encapsulating sheet 10 may have a single layer structure or a multilayer structure in which two or more encapsulating sheets are laminated, but there is no risk of delamination and the sheet thickness is highly uniform.
  • a single layer structure is preferred because it is easy to do.
  • the thickness of the sealing sheet 10 is not particularly limited, but is, for example, 50 ⁇ m to 2000 ⁇ m from the viewpoint of use as a sealing sheet.
  • seat 10 for sealing is not specifically limited, The method of coating the kneaded material obtained by preparing the kneaded material of the resin composition for forming the sheet
  • seat 10 for sealing can be produced without using a solvent, it can suppress that the electronic component (semiconductor chip 23) is influenced by the volatilized solvent.
  • a kneaded product is prepared by melt-kneading each component described below with a known kneader such as a mixing roll, a pressure kneader, or an extruder, and the obtained kneaded product is coated or plastically processed into a sheet. Shape.
  • the temperature is preferably equal to or higher than the softening point of each component described above, for example, 30 to 150 ° C., preferably 40 to 140 ° C., more preferably 60 to 120 in consideration of the thermosetting property of the epoxy resin. ° C.
  • the time is, for example, 1 to 30 minutes, preferably 5 to 15 minutes.
  • the kneading is preferably performed under reduced pressure conditions (under reduced pressure atmosphere). Thereby, while being able to deaerate, the penetration
  • the pressure under reduced pressure is preferably 0.1 kg / cm 2 or less, more preferably 0.05 kg / cm 2 or less.
  • the lower limit of the pressure under reduced pressure is not particularly limited, but is, for example, 1 ⁇ 10 ⁇ 4 kg / cm 2 or more.
  • the kneaded material after melt-kneading is applied in a high temperature state without cooling.
  • the coating method is not particularly limited, and examples thereof include a bar coating method, a knife coating method, and a slot die method.
  • the temperature at the time of coating is preferably not less than the softening point of each component described above, and considering the thermosetting property and moldability of the epoxy resin, for example, 40 to 150 ° C., preferably 50 to 140 ° C., more preferably 70 to 120 ° C.
  • the kneaded material after melt-kneading is plastically processed in a high temperature state without cooling.
  • the plastic working method is not particularly limited, and examples thereof include a flat plate pressing method, a T-die extrusion method, a screw die extrusion method, a roll rolling method, a roll kneading method, an inflation extrusion method, a coextrusion method, and a calendar molding method.
  • the plastic working temperature is preferably not less than the softening point of each component described above, and is 40 to 150 ° C., preferably 50 to 140 ° C., more preferably 70 to 120 ° C. in consideration of the thermosetting property and moldability of the epoxy resin. is there.
  • the sealing sheet 10 can also be obtained by dissolving and dispersing a resin or the like for forming the sealing sheet 10 in an appropriate solvent to adjust the varnish and coating the varnish.
  • the functional layer 8 has a function of suppressing cracking and chipping of corner portions of the sealing sheet 10 when the semiconductor chip 23 is sealed by the sealing sheet 10 and a function of preventing warping after sealing.
  • a metal foil or a plastic plate can be suitably used as a material constituting the functional layer 8.
  • the metal include 42 nickel-iron alloy (42 alloy), stainless steel such as SUS304, copper, aluminum, nickel, and the like.
  • 42 alloy nickel-iron alloy
  • stainless steel such as SUS304
  • copper aluminum, nickel, and the like.
  • copper is preferable from the viewpoint of improving heat dissipation.
  • the material for the plastic plate examples include olefin resins such as polyethylene (PE), polypropylene (PP), and ethylene-propylene copolymer; ethylene-vinyl acetate copolymer (EVA), ionomer resin, and ethylene- (meta ) Copolymers containing ethylene as a monomer component such as acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer; polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polybutylene Polyester such as terephthalate (PBT); acrylic resin; polyvinyl chloride (PVC); polyurethane; polycarbonate; polyphenylene sulfide (PPS); amide resin such as polyamide (nylon), wholly aromatic polyamide (aramid); Ether ketone (PEEK); polyimides; polyetherimides; polyvinylidene chloride; ABS (acrylonitrile - butadiene -
  • the thickness of the functional layer 8 is preferably 50 to 5000 ⁇ m, more preferably 100 to 1000 ⁇ m. By setting the thickness of the functional layer 8 to 50 ⁇ m or more, warping after sealing can be alleviated, and by setting the thickness to 5000 ⁇ m or less, heat can be easily transferred to the sealing sheet during pressing, and the electronic component is embedded. Can be improved.
  • the sealing sheet 10 and the functional layer 7 have the same shape in a plan view, and the length of the outer periphery of the laminated sheet 8 is preferably 500 mm or more, and more preferably 800 mm or more.
  • the upper limit of the outer periphery length of the lamination sheet 8 is not specifically limited, Considering a practical range, it can be 3000 mm or less, for example.
  • the peripheral length of the plurality of semiconductor chips 23 is as large as 500 mm or more. Even when sealing with the sealing sheet 10 having an area, it is possible to ensure sufficient followability of the sealing sheet 10 to the semiconductor chip 23.
  • the laminated sheet 8 is obtained by laminating the sealing sheet 10 and the functional layer 8.
  • the lamination method is not particularly limited.
  • the sealing sheet 10 and the functional layer 8 are prepared separately, and the sealing sheet is formed on the functional layer 8 by bonding them together by pressure bonding or the like.
  • a method of coating a kneaded material for the purpose for example,
  • step C the laminated body 20 may be first arranged on the lower heating plate 32, and then the laminated sheet 8 may be arranged on the laminated body 20, and the laminated sheet 8 is laminated on the laminated body 20 first. Then, a laminate in which the laminate 20 and the laminate sheet 8 are laminated may be disposed on the lower heating plate 32.
  • the semiconductor chip 23 (electronic component) is embedded in the sealing sheet 10 by hot pressing with the lower heating plate 32 and the upper heating plate 34 (steps). D).
  • the sealing sheet 10 functions as a sealing resin for protecting the semiconductor chip 23 and its accompanying elements from the external environment. Thereby, the structure 26 in which the semiconductor chip 23 mounted on the semiconductor wafer 22 is embedded in the sealing sheet 10 is obtained.
  • the temperature is, for example, 40 to 100 ° C., preferably 50 to 90 ° C.
  • the pressure is, for example, 0.1 to 10 MPa, preferably Is 0.5 to 8 MPa
  • the time is, for example, 0.3 to 10 minutes, preferably 0.5 to 5 minutes.
  • the decompression conditions include, for example, a pressure of 0.1 to 5 kPa, preferably 0.1 to 100 Pa, and a decompression holding time (a time from the start of decompression to the start of press)) of, for example, 5 to 600 seconds. Preferably, it is 10 to 300 seconds.
  • step D that is, after the semiconductor chip 23 (electronic component) is embedded in the sealing sheet 10, at least a part of the side surface of the functional layer 8 is covered with the resin constituting the sealing sheet 10 ( (Refer FIG.4 (b)).
  • the resin constituting the sealing sheet 10 (Refer FIG.4 (b)).
  • a part of the resin constituting the sealing sheet 10 is pushed out in the lateral direction by the pressure when the semiconductor chip 23 (electronic component) is embedded in the sealing sheet 10, and the functional layer 8 This is obtained as a result of being partially embedded in the sealing sheet 10.
  • the thickness of the functional layer 8 after the step D is h, and the thickness of the portion of the functional layer 8 covered with the resin (the portion covered with the resin constituting the sealing sheet 10) is set.
  • the d after the step D is preferably [0.01 ⁇ h] or more, and more preferably [0.05 ⁇ h] or more. Further, the d after the step D is preferably [0.99 ⁇ h] or less, and more preferably [0.50 ⁇ h] or less.
  • the d after the step D is [0.01 ⁇ h] or more, cracks and chips at the corners of the sealing sheet can be more suitably suppressed.
  • d after the step D is [0.99 ⁇ h] or less, it is possible to prevent the manufacturing apparatus (for example, the upper heating plate 34) from being contaminated by the resin.
  • the numerical value of d after the process D can be controlled by the conditions (for example, pressure and pressurization time) when the process D is performed and the selection of the resin constituting the sealing sheet 10.
  • the electronic sheet device 28 is formed by thermosetting the sealing sheet 10 (see FIG. 5). Specifically, for example, the sealing body 28 is obtained by heating the entire structure 26 in which the semiconductor chip 23 mounted on the semiconductor wafer 22 is embedded in the sealing sheet 10.
  • the heating temperature is preferably 100 ° C or higher, more preferably 120 ° C or higher.
  • the upper limit of the heating temperature is preferably 200 ° C. or lower, more preferably 180 ° C. or lower.
  • the heating time is preferably 10 minutes or more, more preferably 30 minutes or more.
  • the upper limit of the heating time is preferably 180 minutes or less, more preferably 120 minutes or less.
  • you may pressurize as needed Preferably it is 0.1 Mpa or more, More preferably, it is 0.5 Mpa or more.
  • the upper limit is preferably 10 MPa or less, more preferably 5 MPa or less.
  • the sealing body 28 may be diced (see FIG. 6).
  • the electronic component device 29 in units of the semiconductor chip 23 can be obtained.
  • rewiring and bumps are formed on the electronic component device 29 (on the surface of the semiconductor wafer 22 opposite to the semiconductor chip 23) and mounted on a separate substrate (not shown).
  • a substrate mounting process can be performed.
  • a known device such as a flip chip bonder or a die bonder can be used.
  • FOWLP fan-out type wafer level package
  • the method includes the step D of hot pressing to embed the semiconductor chip 23 in the sealing sheet 10 and seal the function. At least a part of the side surface of the layer 8 is covered with a resin constituting the sealing sheet 10. In the resin for sealing the semiconductor chip 23, cracks are particularly likely to occur at the corners. However, according to the method for manufacturing the electronic component device according to the present embodiment, at least a part of the side surface of the functional layer 8 is covered with the resin that constitutes the sealing sheet 10, and thus the corners of the sealing sheet 10. It is possible to suppress cracking and chipping of the part.
  • the present invention is not limited to this example, and the electronic component other than the semiconductor chip is used. Even when a thing other than a semiconductor wafer is used as the mounted body, the manufacturing method of the electronic component device can be applied.
  • Epoxy resin a YSLV-80XY manufactured by Nippon Steel Chemical Co., Ltd. (bisphenol F type epoxy resin, epkin equivalent 200 g / eq, softening point 80 ° C.)
  • Phenol resin a MEH-7851-SS manufactured by Meiwa Kasei Co., Ltd. (phenol resin having a biphenylaralkyl skeleton, hydroxyl group equivalent 203 g / eq, softening point 67 ° C.)
  • Curing accelerator a 2PHZ-PW (2-phenyl-4,5-dihydroxymethylimidazole) manufactured by Shikoku Kasei Kogyo Co., Ltd.
  • Thermoplastic resin a SIBSTER 072T (styrene-isobutylene-styrene block copolymer) manufactured by Kaneka Corporation
  • the measurement conditions were a heating rate of 10 ° C./min, a strain of 20%, and a frequency of 0.1 Hz.
  • the functional layer was affixed on the sealing sheet of an Example and a comparative example, and the lamination sheet was obtained.
  • the functional layer used was common to the examples and comparative examples. Specifically, a copper foil having a circular shape and a thickness of 50 ⁇ m was used. Table 1 shows the diameter and outer peripheral length of the functional layer. At the time of attachment, the attachment was performed so that the center point of the sealing sheet and the functional layer coincided in plan view.
  • a board on which electronic components were mounted was prepared.
  • a semiconductor wafer having a diameter of 300 mm and a thickness of 700 ⁇ m was used.
  • the electronic component uses a semiconductor chip having a length of 10 mm, a width of 10 mm, and a thickness of 500 ⁇ m, and an interval of 10 mm (distance between the end of one electronic component and the end of the next electronic component) is formed on the substrate. It was mounted in 14 vertical x 14 horizontal. The height of the pump is 50 ⁇ m.
  • the substrate is placed on the lower heating plate of the instantaneous vacuum laminating apparatus VS008-1515 (manufactured by Mikado Technos Co., Ltd.) with the surface on which the electronic components are mounted facing up, and the laminated sheet is sealed thereon
  • the sheet was placed with the sheet surface facing down. Then, it hot-pressed under pressure reduction.
  • the hot press conditions are as shown in Table 1. After hot pressing, it was heated in an oven at 150 ° C. for 1 hour. Then, it cooled naturally to room temperature (23 degreeC), and was set as the sample for evaluation.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Laminated Bodies (AREA)

Abstract

A method for manufacturing a semiconductor device, said method having the following steps: step A, in which a laminate comprising an electronic component mounted on a mounting body is prepared; step B, in which a laminated sheet comprising a sealing sheet and a functional layer is prepared, said sealing sheet being for sealing the electronic component and said functional layer comprising a material that is different from the material constituting the sealing sheet; step C, in which the laminate is placed on top of a heating plate with the surface of the laminate on which the electronic component is mounted facing up and the laminated sheet is placed on top of the surface of the laminate on which the electronic component is mounted with the sealing-sheet side of the laminated sheet facing down; and step D, in which, after step C, hot pressing is used to embed and seal the electronic component in the sealing sheet. After step D, at least parts of the edges of the functional layer are covered by a resin that constitutes the sealing sheet.

Description

電子部品装置の製造方法、積層シート、及び、電子部品装置Manufacturing method of electronic component device, laminated sheet, and electronic component device
　本発明は、電子部品装置の製造方法、当該電子部品装置の製造方法に使用される積層シート、及び、電子部品装置に関する。 The present invention relates to a method for manufacturing an electronic component device, a laminated sheet used in the method for manufacturing the electronic component device, and an electronic component device.
　従来、半導体素子の封止に使用される封止用シートが知られている。 Conventionally, sealing sheets used for sealing semiconductor elements are known.
　特許文献１には、金属泊からなる基材面上に、特定の成分を含有するエポキシ樹脂組成物からなる樹脂組成物層が形成された半導体素子封止用シートが開示されている。特許文献１では、吸着ヘッドに装着した半導体素子封止用シートを、金型に配置された半導体素子に圧着させるとともに、吸着ヘッド内に内蔵されたヒータで半導体素子封止用シートを加熱して樹脂組成物層を加熱溶融させ、ついで、樹脂組成物層を加熱硬化させ、金型から脱型することにより、半導体素子の片面側が封止樹脂層によって樹脂封止され、さらに封止樹脂層表面に金属箔が設けられた半導体装置を得ることができることが記載されている。 Patent Document 1 discloses a semiconductor element sealing sheet in which a resin composition layer made of an epoxy resin composition containing a specific component is formed on a base material made of a metal stay. In Patent Document 1, the semiconductor element sealing sheet attached to the suction head is crimped to the semiconductor element disposed in the mold, and the semiconductor element sealing sheet is heated by a heater built in the suction head. The resin composition layer is heated and melted, then the resin composition layer is heated and cured, and then removed from the mold, whereby one side of the semiconductor element is resin-sealed by the sealing resin layer, and the surface of the sealing resin layer It is described that a semiconductor device provided with a metal foil can be obtained.
特開２０００－１７４０４５号公報JP 2000-174045 A
　半導体装置等の電子部品装置においては、半導体素子を封止している樹脂に割れや欠けがないことが望まれる。 In an electronic component device such as a semiconductor device, it is desirable that the resin sealing the semiconductor element does not have cracks or chips.
　本発明は上述した課題に鑑みてなされたものであり、その目的は、電子部品を封止している樹脂に割れや欠けが発生することを抑制することが可能な電子部品装置の製造方法、及び、積層シートを提供することにある。また、電子部品を封止している樹脂の割れや欠けの発生が抑制された電子部品装置を提供することにある。 The present invention has been made in view of the above-described problems, and an object of the present invention is to provide an electronic component device manufacturing method capable of suppressing the occurrence of cracking or chipping in a resin sealing the electronic component, And it is providing a laminated sheet. Another object of the present invention is to provide an electronic component device in which cracking and chipping of a resin sealing the electronic component is suppressed.
　本願発明者等は、下記の構成を採用することにより、前記の課題を解決できることを見出して本発明を完成させるに至った。 The inventors of the present application have found that the above-mentioned problems can be solved by adopting the following configuration, and have completed the present invention.
　すなわち、本発明は、電子部品装置の製造方法であって、
　電子部品が被実装体に実装された積層体を準備する工程Ａと、
　電子部品を封止するための封止用シートと前記封止用シートとは異なる材質からなる機能層とを有する積層シートを準備する工程Ｂと、
　加熱板上に前記積層体を前記電子部品が実装された面を上にして配置するとともに、前記積層体の前記電子部品が実装された面上に前記積層シートを、前記封止用シート面を下側にして配置する工程Ｃと、
　前記工程Ｃの後、熱プレスして、前記電子部品を前記封止用シートに埋め込んで封止する工程Ｄとを具備し、
　前記工程Ｄの後に、前記機能層の側面の少なくとも一部が前記封止用シートを構成する樹脂により被覆されていることを特徴とする。 That is, the present invention is a method of manufacturing an electronic component device,
Step A for preparing a laminate in which the electronic component is mounted on the mounted body;
Preparing a laminated sheet having a sealing sheet for sealing an electronic component and a functional layer made of a material different from the sealing sheet; and
The laminated body is disposed on a heating plate with the surface on which the electronic component is mounted facing upward, and the laminated sheet is disposed on the surface of the laminated body on which the electronic component is mounted, and the sealing sheet surface is disposed on the surface. Step C to be placed on the lower side,
After the step C, it is hot-pressed, and includes the step D of embedding the electronic component in the sealing sheet and sealing it,
After the step D, at least a part of the side surface of the functional layer is covered with a resin constituting the sealing sheet.
　本発明に係る電子部品装置の製造方法によれば、熱プレスして、前記電子部品を前記封止用シートに埋め込んで封止する工程Ｄを有し、前記工程Ｄの後に、前記機能層の側面の少なくとも一部が前記封止用シートを構成する樹脂により被覆される。電子部品を封止する樹脂においては、特に、角部分に割れ欠けが発生し易い。しかしながら、本発明に係る電子部品装置の製造方法によれば、前記機能層の側面の少なくとも一部が前記封止用シートを構成する樹脂により被覆されているため、封止用シートの角部分の割れや欠けを抑制することができる。 According to the method for manufacturing an electronic component device according to the present invention, the method includes a step D of hot pressing and embedding the electronic component in the sealing sheet to seal the functional layer. At least a part of the side surface is covered with the resin constituting the sealing sheet. In the resin that seals electronic components, cracks are particularly likely to occur at the corners. However, according to the method for manufacturing an electronic component device according to the present invention, at least a part of the side surface of the functional layer is covered with the resin constituting the sealing sheet. Cracking and chipping can be suppressed.
　前記構成において、前記機能層の厚さをｈ、前記機能層における前記樹脂により被覆されている部分の厚さをｄとしたとき、前記工程Ｄの後の前記ｄが［０．０１×ｈ］以上［０．９９×ｈ］以下であることが好ましい。前記工程Ｄの後の前記ｄが［０．０１×ｈ］以上であると、封止用シートの角部分の割れや欠けをより好適に抑制することができる。一方、前記工程Ｄの後の前記ｄが［０．９９×ｈ］以下であると、前記樹脂により製造用の装置（例えば、上側加熱板）が汚染されることを防止することができる。 In the above configuration, when the thickness of the functional layer is h and the thickness of the portion of the functional layer covered with the resin is d, the d after the step D is [0.01 × h]. It is preferable that it is [0.99 * h] or less. When the d after the step D is [0.01 × h] or more, cracks and chips at the corners of the sealing sheet can be more suitably suppressed. On the other hand, when the d after the step D is [0.99 × h] or less, it is possible to prevent the production apparatus (for example, the upper heating plate) from being contaminated by the resin.
　前記構成において、前記封止用シートの０～２００℃における最低溶融粘度が１０００００Ｐａ・ｓ以下であることが好ましい。前記封止用シートの０～２００℃における最低溶融粘度が１０００００Ｐａ・ｓ以下であると、熱プレス時の溶融粘度が１０００００Ｐａ・ｓ以下となる。その結果、機能層の側面の少なくとも一部が前記封止用シートを構成する樹脂により被覆された構造を形成し易くすることができる。 In the above configuration, the minimum melt viscosity at 0 to 200 ° C. of the sealing sheet is preferably 100000 Pa · s or less. When the minimum melt viscosity at 0 to 200 ° C. of the sealing sheet is 100,000 Pa · s or less, the melt viscosity at the time of hot pressing is 100,000 Pa · s or less. As a result, it is possible to easily form a structure in which at least a part of the side surface of the functional layer is covered with the resin constituting the sealing sheet.
　前記構成においては、前記封止用シートと前記機能層とは平面視で同一形状であり、前記積層シートの外周の長さが５００ｍｍ以上であることが好ましい。複数の電子部品を外周の長さが５００ｍｍ以上という大面積の封止用シートにて封止する場合、封止用シートの電子部品への追従性は、より高いことが要望される。
　本発明では、加熱板と封止用シートとの間に積層体が介在しているため、複数の電子部品を外周の長さが５００ｍｍ以上という大面積の封止用シートにて封止する場合にも、封止用シートの電子部品への充分な追従性を確保することが可能となる。
　なお、封止用シートの外周の長さとは、封止用シートにおける外側の周りの長さ全体をいい、例えば、封止用シートが矩形の場合は、［（縦の長さ）×２＋（横の長さ）×２］のことをいい、封止用シートが円形の場合は、円周全体の長さ［２×π×（半径）］を言う。 In the said structure, it is preferable that the said sheet | seat for sealing and the said functional layer are the same shape by planar view, and the length of the outer periphery of the said lamination sheet is 500 mm or more. When a plurality of electronic components are sealed with a sealing sheet having a large area with an outer circumference of 500 mm or more, it is desired that the followability of the sealing sheet to the electronic components is higher.
In the present invention, since the laminate is interposed between the heating plate and the sealing sheet, a plurality of electronic components are sealed with a large-area sealing sheet having an outer peripheral length of 500 mm or more. In addition, sufficient followability of the sealing sheet to the electronic component can be ensured.
The length of the outer periphery of the sealing sheet refers to the entire length around the outside of the sealing sheet. For example, when the sealing sheet is rectangular, [(vertical length) × 2 + ( Horizontal length) × 2]. When the sealing sheet is circular, it means the length of the entire circumference [2 × π × (radius)].
　前記構成において、前記封止用シートは、エポキシ樹脂、硬化剤、及び、無機充填剤を含有していることが好ましい。前記構成とすることにより、電子部品の長期信頼性を向上することができる。 In the above configuration, the sealing sheet preferably contains an epoxy resin, a curing agent, and an inorganic filler. With the above configuration, the long-term reliability of the electronic component can be improved.
　また、本発明は、積層シートであって、前記に記載の電子部品装置の製造方法に使用されることを特徴とする。 Further, the present invention is a laminated sheet, and is characterized by being used in the method for manufacturing an electronic component device described above.
　前記積層シートが、前記に記載の電子部品装置の製造方法に使用されると、前記工程Ｄにより、前記機能層の側面の少なくとも一部を、前記封止用シートを構成する樹脂により被覆することができる。その結果、当該積層シートを用いて製造される電子部品装置は、封止用シートの角部分の割れや欠けを抑制されたものとなる。 When the laminate sheet is used in the method for manufacturing an electronic component device described above, at least a part of the side surface of the functional layer is covered with the resin constituting the sealing sheet in the step D. Can do. As a result, in the electronic component device manufactured using the laminated sheet, cracks and chips at the corners of the sealing sheet are suppressed.
　前記構成において、前記封止用シートの０～２００℃における最低溶融粘度が１０００００Ｐａ・ｓ以下であることが好ましい。前記封止用シートの０～２００℃における最低溶融粘度が１０００００Ｐａ・ｓ以下であると、熱プレス時の溶融粘度が１０００００Ｐａ・ｓ以下となる。その結果、機能層の側面の少なくとも一部が前記封止用シートを構成する樹脂により被覆された構造を形成し易くすることができる。 In the above configuration, the minimum melt viscosity at 0 to 200 ° C. of the sealing sheet is preferably 100000 Pa · s or less. When the minimum melt viscosity at 0 to 200 ° C. of the sealing sheet is 100,000 Pa · s or less, the melt viscosity at the time of hot pressing is 100,000 Pa · s or less. As a result, it is possible to easily form a structure in which at least a part of the side surface of the functional layer is covered with the resin constituting the sealing sheet.
　前記構成においては、前記封止用シートと前記機能層とは平面視で同一形状であり、前記積層シートの外周の長さが５００ｍｍ以上であることが好ましい。複数の電子部品を外周の長さが５００ｍｍ以上という大面積の封止用シートにて封止する場合、封止用シートの電子部品への追従性は、より高いことが要望される。
　本発明では、加熱板と封止用シートとの間に積層体が介在しているため、複数の電子部品を外周の長さが５００ｍｍ以上という大面積の封止用シートにて封止する場合にも、封止用シートの電子部品への充分な追従性を確保することが可能となる。 In the said structure, it is preferable that the said sheet | seat for sealing and the said functional layer are the same shape by planar view, and the length of the outer periphery of the said lamination sheet is 500 mm or more. When a plurality of electronic components are sealed with a sealing sheet having a large area with an outer circumference of 500 mm or more, it is desired that the followability of the sealing sheet to the electronic components is higher.
In the present invention, since the laminate is interposed between the heating plate and the sealing sheet, a plurality of electronic components are sealed with a large-area sealing sheet having an outer peripheral length of 500 mm or more. In addition, sufficient followability of the sealing sheet to the electronic component can be ensured.
　前記構成において、前記封止用シートは、エポキシ樹脂、硬化剤、及び、無機充填剤を含有していることが好ましい。前記構成とすることにより、電子部品の長期信頼性を向上することができる。 In the above configuration, the sealing sheet preferably contains an epoxy resin, a curing agent, and an inorganic filler. With the above configuration, the long-term reliability of the electronic component can be improved.
　また、本発明は、電子部品装置であって、
　電子部品が被実装体に実装された積層体と、
　前記電子部品を封止した封止用シートと、
　前記封止用シートの前記電子部品とは反対側に積層された機能層とを有し、
　前記機能層の側面の少なくとも一部が前記封止用シートを構成する樹脂により被覆されていることを特徴とする。 The present invention also provides an electronic component device,
A laminated body in which electronic components are mounted on a mounted body;
A sealing sheet sealing the electronic component;
A functional layer laminated on the side opposite to the electronic component of the sealing sheet;
At least a part of the side surface of the functional layer is covered with a resin constituting the sealing sheet.
　前記構成によれば、前記機能層の側面の少なくとも一部が前記封止用シートを構成する樹脂により被覆されている。電子部品を封止する樹脂においては、特に、角部分に割れ欠けが発生し易い。しかしながら、本発明に係る電子部品装置によれば、前記機能層の側面の少なくとも一部が前記封止用シートを構成する樹脂により被覆されているため、封止用シートの角部分の割れや欠けを抑制することができる。 According to the above configuration, at least a part of the side surface of the functional layer is covered with the resin constituting the sealing sheet. In the resin that seals electronic components, cracks are particularly likely to occur at the corners. However, according to the electronic component device according to the present invention, since at least a part of the side surface of the functional layer is covered with the resin constituting the sealing sheet, the corner portion of the sealing sheet is cracked or chipped. Can be suppressed.
　本発明によれば、電子部品を封止している樹脂に割れや欠けが発生することを抑制することが可能な電子部品装置の製造方法、及び、積層シートを提供することができる。また、電子部品を封止している樹脂の割れや欠けの発生が抑制された電子部品装置を提供することができる。 According to the present invention, it is possible to provide a method for manufacturing an electronic component device and a laminated sheet that can prevent the resin sealing the electronic component from being cracked or chipped. In addition, it is possible to provide an electronic component device in which the occurrence of cracking and chipping of the resin sealing the electronic component is suppressed.
本発明の一実施形態に係る電子部品装置の製造方法を説明するための断面模式図である。It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the electronic component apparatus which concerns on one Embodiment of this invention. 本発明の一実施形態に係る電子部品装置の製造方法を説明するための断面模式図である。It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the electronic component apparatus which concerns on one Embodiment of this invention. 本発明の一実施形態に係る電子部品装置の製造方法を説明するための断面模式図である。It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the electronic component apparatus which concerns on one Embodiment of this invention. （ａ）及び（ｂ）は、本発明の一実施形態に係る電子部品装置の製造方法を説明するための断面模式図である。(A) And (b) is a cross-sectional schematic diagram for demonstrating the manufacturing method of the electronic component apparatus which concerns on one Embodiment of this invention. 本発明の一実施形態に係る電子部品装置の製造方法を説明するための断面模式図である。It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the electronic component apparatus which concerns on one Embodiment of this invention. 本発明の一実施形態に係る電子部品装置の製造方法を説明するための断面模式図である。It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the electronic component apparatus which concerns on one Embodiment of this invention.
　以下、本発明の実施形態について、図面を参照しつつ説明する。ただし、本発明はこれらの実施形態のみに限定されるものではない。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention is not limited only to these embodiments.
　本実施形態に係る電子部品装置の製造方法は、
　電子部品が被実装体に実装された積層体を準備する工程Ａと、
　電子部品を封止するための封止用シートと前記封止用シートとは異なる材質からなる機能層とを有する積層シートを準備する工程Ｂと、
　加熱板上に前記積層体を前記電子部品が実装された面を上にして配置するとともに、前記積層体の前記電子部品が実装された面上に前記積層シートを、前記封止用シート面を下側にして配置する工程Ｃと、
　前記工程Ｃの後、熱プレスして、前記電子部品を前記封止用シートに埋め込んで封止する工程Ｄとを少なくとも具備し、
　前記工程Ｄの後に、前記機能層の側面の少なくとも一部が前記封止用シートを構成する樹脂により被覆されている。 The manufacturing method of the electronic component device according to the present embodiment is as follows:
Step A for preparing a laminate in which the electronic component is mounted on the mounted body;
Preparing a laminated sheet having a sealing sheet for sealing an electronic component and a functional layer made of a material different from the sealing sheet; and
The laminated body is disposed on a heating plate with the surface on which the electronic component is mounted facing upward, and the laminated sheet is disposed on the surface of the laminated body on which the electronic component is mounted, and the sealing sheet surface is disposed on the surface. Step C to be placed on the lower side,
After the step C, at least a step D in which heat pressing is performed to embed and seal the electronic component in the sealing sheet,
After the step D, at least a part of the side surface of the functional layer is covered with a resin constituting the sealing sheet.
　前記電子部品としては、被実装体に実装され、電子部品としての機能を発揮するものであれば、特に限定されないが、例えば、ＳＡＷ（Ｓｕｒｆａｃｅ　Ａｃｏｕｓｔｉｃ　Ｗａｖｅ）フィルタ；圧力センサ、振動センサなどのＭＥＭＳ（Ｍｉｃｒｏ　Ｅｌｅｃｔｒｏ　Ｍｅｃｈａｎｉｃａｌ　Ｓｙｓｔｅｍｓ）；ＬＳＩなどのＩＣ、トランジスタなどの半導体素子；コンデンサ；抵抗などの電子デバイスを挙げることできる。 The electronic component is not particularly limited as long as it is mounted on a mounted body and exhibits a function as an electronic component. For example, a SAW (Surface Acoustic Wave) filter; MEMS (such as a pressure sensor and a vibration sensor) Micro Electro Mechanical Systems); ICs such as LSI; semiconductor elements such as transistors; capacitors; electronic devices such as resistors.
　前記被実装体としては、特に限定されないが、プリント配線基板、半導体ウエハ等を挙げることができる。 The mounted body is not particularly limited, and examples thereof include a printed wiring board and a semiconductor wafer.
　前記積層体の具体例としては、前記電子部品として半導体素子（例えば、半導体チップ）を用いるとともに前記被実装体として半導体ウエハを用い、ＣｏＷ（ｃｈｉｐ　ｏｎ　ｗａｆｅｒ）接続を施したものを挙げることができる。 As a specific example of the laminated body, a semiconductor element (for example, a semiconductor chip) is used as the electronic component, and a semiconductor wafer is used as the mounted body, and a CoW (chip on wafer) connection is performed. .
　以下、前記電子部品として半導体チップ、前記被実装体として半導体ウエハを使用した場合について説明する。 Hereinafter, a case where a semiconductor chip is used as the electronic component and a semiconductor wafer is used as the mounted body will be described.
　図１～図６は、本発明の一実施形態に係る電子部品装置の製造方法を説明するための断面模式図である。なお、図４（ｂ）は、図４（ａ）の部分拡大図である。 1 to 6 are schematic sectional views for explaining a method for manufacturing an electronic component device according to an embodiment of the present invention. FIG. 4B is a partially enlarged view of FIG.
　［積層体を準備する工程］
　図１に示すように、本実施形態に係る電子部品装置の製造方法では、まず、半導体チップ２３が半導体ウエハ２２に実装された積層体２０を準備する（工程Ａ）。なお、図１では、複数の半導体チップ２３が半導体ウエハ２２にｗ実装されている様子を示しているが、本発明において被実装体に実装される電子部品の数は１つであってもよい。半導体チップ２３は、回路が形成された半導体ウエハを公知の方法でダイシングして個片化することにより形成できる。半導体チップ２３の半導体ウエハ２２への搭載には、フリップチップボンダーやダイボンダーなどの公知の装置を用いることができる。半導体チップ２３と半導体ウエハ２２とはバンプ（図示せず）などの突起電極を介して電気的に接続されている。また、半導体チップ２３と半導体ウエハ２２との間の距離は適宜設定でき、一般的には１５～５０μｍ程度である。この間隙には、封止樹脂（アンダーフィル）を充填してもよい。 [Process of preparing a laminate]
As shown in FIG. 1, in the method for manufacturing an electronic component device according to the present embodiment, first, a stacked body 20 in which a semiconductor chip 23 is mounted on a semiconductor wafer 22 is prepared (step A). 1 shows a state in which a plurality of semiconductor chips 23 are mounted on the semiconductor wafer 22, the number of electronic components mounted on the mounted body in the present invention may be one. . The semiconductor chip 23 can be formed by dicing a semiconductor wafer on which a circuit is formed by a known method. For mounting the semiconductor chip 23 on the semiconductor wafer 22, a known device such as a flip chip bonder or a die bonder can be used. The semiconductor chip 23 and the semiconductor wafer 22 are electrically connected through protruding electrodes such as bumps (not shown). Further, the distance between the semiconductor chip 23 and the semiconductor wafer 22 can be set as appropriate, and is generally about 15 to 50 μm. This gap may be filled with sealing resin (underfill).
　［積層シートを準備する工程］
　また、本実施形態に係る電子部品装置の製造方法では、図２に示すように、電子部品を封止するための封止用シート１０と封止用シート１０とは異なる材質からなる機能層１２とが積層された積層シート８を準備する（工程Ｂ）。積層シート８は、封止用シート１０側を貼り合わせ面として、ポリエチレンテレフタレート（ＰＥＴ）フィルムなどの支持体上に積層された状態で準備してもよい。この場合、支持体には封止用シート１０の剥離を容易に行うために離型処理が施されていてもよい。 [Process for preparing laminated sheet]
Moreover, in the manufacturing method of the electronic component device according to the present embodiment, as shown in FIG. 2, the sealing sheet 10 for sealing the electronic component and the functional layer 12 made of different materials are used. A laminated sheet 8 is prepared (step B). The laminated sheet 8 may be prepared in a state of being laminated on a support such as a polyethylene terephthalate (PET) film with the sealing sheet 10 side as a bonding surface. In this case, the support may be subjected to a mold release treatment in order to easily peel off the sealing sheet 10.
　なお、本実施形態では、積層シートが封止用シート１０と機能層１２とが積層された２層構成である場合について説明するが、本発明における積層シートは、封止用シートと機能層とを有していればこの例に限定されず、他の層がさらに積層されていてもよい。 In addition, although this embodiment demonstrates the case where a lamination sheet is a 2 layer structure by which the sheet | seat 10 for sealing and the functional layer 12 were laminated | stacked, the lamination sheet in this invention is a sheet | seat for sealing, a functional layer, If it has, it will not be limited to this example, The other layer may be further laminated | stacked.
　（封止用シート）
　封止用シート１０は、エポキシ樹脂、及びフェノール樹脂を含むことが好ましい。これにより、良好な熱硬化性が得られる。 (Sealing sheet)
It is preferable that the sealing sheet 10 contains an epoxy resin and a phenol resin. Thereby, favorable thermosetting is obtained.
　前記エポキシ樹脂としては、特に限定されるものではない。例えば、トリフェニルメタン型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、ビフェニル型エポキシ樹脂、変性ビスフェノールＡ型エポキシ樹脂、ビスフェノールＡ型エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂、変性ビスフェノールＦ型エポキシ樹脂、ジシクロペンタジエン型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、フェノキシ樹脂などの各種のエポキシ樹脂を用いることができる。これらエポキシ樹脂は単独で用いてもよいし２種以上併用してもよい。 The epoxy resin is not particularly limited. For example, triphenylmethane type epoxy resin, cresol novolac type epoxy resin, biphenyl type epoxy resin, modified bisphenol A type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, modified bisphenol F type epoxy resin, dicyclopentadiene type Various epoxy resins such as an epoxy resin, a phenol novolac type epoxy resin, and a phenoxy resin can be used. These epoxy resins may be used alone or in combination of two or more.
　エポキシ樹脂の硬化後の靭性及びエポキシ樹脂の反応性を確保する観点からは、エポキシ当量１５０～２５０、軟化点もしくは融点が５０～１３０℃の常温で固形のものが好ましく、なかでも、信頼性の観点から、トリフェニルメタン型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、ビフェニル型エポキシ樹脂がより好ましい。 From the viewpoint of ensuring the toughness of the epoxy resin after curing and the reactivity of the epoxy resin, it is preferable that the epoxy equivalent is 150 to 250 and the softening point or the melting point is 50 to 130 ° C., solid at room temperature. From the viewpoint, triphenylmethane type epoxy resin, cresol novolac type epoxy resin, and biphenyl type epoxy resin are more preferable.
　前記フェノール樹脂は、エポキシ樹脂との間で硬化反応を生起するものであれば特に限定されるものではない。例えば、フェノールノボラック樹脂、フェノールアラルキル樹脂、ビフェニルアラルキル樹脂、ジシクロペンタジエン型フェノール樹脂、クレゾールノボラック樹脂、レゾール樹脂などが用いられる。これらフェノール樹脂は単独で用いてもよいし、２種以上併用してもよい。 The phenol resin is not particularly limited as long as it causes a curing reaction with the epoxy resin. For example, a phenol novolac resin, a phenol aralkyl resin, a biphenyl aralkyl resin, a dicyclopentadiene type phenol resin, a cresol novolak resin, a resole resin, or the like is used. These phenolic resins may be used alone or in combination of two or more.
　前記フェノール樹脂としては、エポキシ樹脂との反応性の観点から、水酸基当量が７０～２５０、軟化点が５０～１１０℃のものを用いることが好ましく、なかでも硬化反応性が高いという観点から、フェノールノボラック樹脂を好適に用いることができる。また、信頼性の観点から、フェノールアラルキル樹脂やビフェニルアラルキル樹脂のような低吸湿性のものも好適に用いることができる。 As the phenol resin, those having a hydroxyl equivalent weight of 70 to 250 and a softening point of 50 to 110 ° C. are preferably used from the viewpoint of reactivity with the epoxy resin, and phenol phenol is particularly preferable from the viewpoint of high curing reactivity. A novolac resin can be suitably used. From the viewpoint of reliability, low hygroscopic materials such as phenol aralkyl resins and biphenyl aralkyl resins can also be suitably used.
　エポキシ樹脂とフェノール樹脂の配合割合は、硬化反応性という観点から、エポキシ樹脂中のエポキシ基１当量に対して、フェノール樹脂中の水酸基の合計が０．７～１．５当量となるように配合することが好ましく、より好ましくは０．９～１．２当量である。 The blending ratio of the epoxy resin and the phenol resin is blended so that the total of hydroxyl groups in the phenol resin is 0.7 to 1.5 equivalents with respect to 1 equivalent of the epoxy group in the epoxy resin from the viewpoint of curing reactivity. It is preferable to use 0.9 to 1.2 equivalents.
　封止用シート１０中のエポキシ樹脂及びフェノール樹脂の合計含有量は、２．０重量％以上が好ましく、３．０重量％以上がより好ましい。２．０重量％以上であると、電子部品、被実装体などに対する接着力が良好に得られる。封止用シート１０中のエポキシ樹脂及びフェノール樹脂の合計含有量は、２０重量％以下が好ましく、１０重量％以下がより好ましい。２０重量％以下であると、吸湿性を低減できる。 The total content of the epoxy resin and the phenol resin in the sealing sheet 10 is preferably 2.0% by weight or more, and more preferably 3.0% by weight or more. Adhesive force with respect to an electronic component, a to-be-mounted body, etc. is acquired favorably as it is 2.0 weight% or more. The total content of the epoxy resin and the phenol resin in the sealing sheet 10 is preferably 20% by weight or less, and more preferably 10% by weight or less. Hygroscopicity can be reduced as it is 20 weight% or less.
　封止用シート１０は、熱可塑性樹脂を含むことが好ましい。これにより、未硬化時のハンドリング性や、硬化物の低応力性が得られる。 The sealing sheet 10 preferably contains a thermoplastic resin. Thereby, the handleability at the time of non-hardening and the low stress property of hardened | cured material are acquired.
　前記熱可塑性樹脂としては、天然ゴム、ブチルゴム、イソプレンゴム、クロロプレンゴム、エチレン－酢酸ビニル共重合体、エチレン－アクリル酸共重合体、エチレン－アクリル酸エステル共重合体、ポリブタジエン樹脂、ポリカーボネート樹脂、熱可塑性ポリイミド樹脂、６－ナイロンや６，６－ナイロンなどのポリアミド樹脂、フェノキシ樹脂、アクリル樹脂、ＰＥＴやＰＢＴなどの飽和ポリエステル樹脂、ポリアミドイミド樹脂、フッ素樹脂、スチレン－イソブチレン－スチレンブロック共重合体などが挙げられる。これらの熱可塑性樹脂は単独で、又は２種以上を併用して用いることができる。なかでも、低応力性、低吸水性という観点から、スチレン－イソブチレン－スチレンブロック共重合体が好ましい。 Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, heat Plastic polyimide resin, polyamide resin such as 6-nylon and 6,6-nylon, phenoxy resin, acrylic resin, saturated polyester resin such as PET and PBT, polyamideimide resin, fluororesin, styrene-isobutylene-styrene block copolymer, etc. Is mentioned. These thermoplastic resins can be used alone or in combination of two or more. Of these, a styrene-isobutylene-styrene block copolymer is preferable from the viewpoint of low stress and low water absorption.
　封止用シート１０中の熱可塑性樹脂の含有量は、１．０重量％以上が好ましく、１．５重量％以上がより好ましい。１．０重量％以上であると、柔軟性、可撓性が得られる。封止用シート１０中の熱可塑性樹脂の含有量は、３．５重量％以下が好ましく、３重量％以下がより好ましい。３．５重量％以下であると、電子部品や被実装体との接着性が良好である。 The content of the thermoplastic resin in the sealing sheet 10 is preferably 1.0% by weight or more, and more preferably 1.5% by weight or more. A softness | flexibility and flexibility are acquired as it is 1.0 weight% or more. The content of the thermoplastic resin in the sealing sheet 10 is preferably 3.5% by weight or less, and more preferably 3% by weight or less. Adhesiveness with an electronic component or a to-be-mounted body is favorable in it being 3.5 weight% or less.
　封止用シート１０は、無機充填剤を含むことが好ましい。 The sealing sheet 10 preferably contains an inorganic filler.
　前記無機充填剤は、特に限定されるものではなく、従来公知の各種充填剤を用いることができ、例えば、石英ガラス、タルク、シリカ（溶融シリカや結晶性シリカなど）、アルミナ、窒化アルミニウム、窒化珪素、窒化ホウ素の粉末が挙げられる。これらは単独で用いてもよいし、２種以上併用してもよい。なかでも、線膨張係数を良好に低減できるという理由から、シリカ、アルミナが好ましく、シリカがより好ましい。 The inorganic filler is not particularly limited, and various conventionally known fillers can be used. For example, quartz glass, talc, silica (such as fused silica and crystalline silica), alumina, aluminum nitride, nitriding Examples thereof include silicon and boron nitride powders. These may be used alone or in combination of two or more. Among these, silica and alumina are preferable, and silica is more preferable because the linear expansion coefficient can be satisfactorily reduced.
　シリカとしては、シリカ粉末が好ましく、溶融シリカ粉末がより好ましい。溶融シリカ粉末としては、球状溶融シリカ粉末、破砕溶融シリカ粉末が挙げられるが、流動性という観点から、球状溶融シリカ粉末が好ましい。なかでも、平均粒径が１０～３０μｍの範囲のものが好ましく、１５～２５μｍの範囲のものがより好ましい。
　なお、平均粒径は、例えば、母集団から任意に抽出される試料を用い、レーザー回折散乱式粒度分布測定装置を用いて測定することにより導き出すことができる。 As silica, silica powder is preferable, and fused silica powder is more preferable. Examples of the fused silica powder include spherical fused silica powder and crushed fused silica powder. From the viewpoint of fluidity, spherical fused silica powder is preferable. Among these, those having an average particle diameter in the range of 10 to 30 μm are preferable, and those having a mean particle diameter in the range of 15 to 25 μm are more preferable.
The average particle diameter can be derived, for example, by using a sample arbitrarily extracted from the population and measuring it using a laser diffraction / scattering particle size distribution measuring apparatus.
　封止用シート１０中の前記無機充填剤の含有量は、封止用シート１０全体に対して、８０～９５重量％であることが好ましく、より好ましくは、８５～９０重量％である。前記無機充填剤の含有量が封止用シート１０全体に対して８０重量％以上であると、長期信頼性を向上できる。一方、前記無機充填剤の含有量が封止用シート１０全体に対して９５量％以下であると、柔軟性、流動性、接着性がより良好となる。 The content of the inorganic filler in the sealing sheet 10 is preferably 80 to 95% by weight, more preferably 85 to 90% by weight with respect to the entire sealing sheet 10. If the content of the inorganic filler is 80% by weight or more with respect to the entire sealing sheet 10, long-term reliability can be improved. On the other hand, a softness | flexibility, fluidity | liquidity, and adhesiveness become it more favorable that content of the said inorganic filler is 95 mass% or less with respect to the whole sheet | seat 10 for sealing.
　封止用シート１０は、硬化促進剤を含むことが好ましい。 It is preferable that the sealing sheet 10 contains a curing accelerator.
　硬化促進剤としては、エポキシ樹脂とフェノール樹脂の硬化を進行させるものであれば特に限定されず、例えば、トリフェニルホスフィン、テトラフェニルホスホニウムテトラフェニルボレートなどの有機リン系化合物；２－フェニル－４，５－ジヒドロキシメチルイミダゾール、２－フェニル－４－メチル－５－ヒドロキシメチルイミダゾールなどのイミダゾール系化合物；などが挙げられる。なかでも、混練時の温度上昇によっても硬化反応が急激に進まず、封止用シート１０を良好に作製できるという理由から、２－フェニル－４，５－ジヒドロキシメチルイミダゾールが好ましい。 The curing accelerator is not particularly limited as long as it can cure the epoxy resin and the phenol resin, and examples thereof include organophosphorus compounds such as triphenylphosphine and tetraphenylphosphonium tetraphenylborate; 2-phenyl-4, And imidazole compounds such as 5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole. Among these, 2-phenyl-4,5-dihydroxymethylimidazole is preferred because the curing reaction does not proceed rapidly even when the temperature during kneading increases, and the sealing sheet 10 can be satisfactorily produced.
　硬化促進剤の含有量は、エポキシ樹脂及びフェノール樹脂の合計１００重量部に対して０．１～５重量部が好ましい。 The content of the curing accelerator is preferably 0.1 to 5 parts by weight with respect to 100 parts by weight of the total of the epoxy resin and the phenol resin.
　封止用シート１０は、難燃剤成分を含むことが好ましい。これにより、部品ショートや発熱などにより発火した際の、燃焼拡大を低減できる。難燃剤組成分としては、例えば水酸化アルミニウム、水酸化マグネシウム、水酸化鉄、水酸化カルシウム、水酸化スズ、複合化金属水酸化物などの各種金属水酸化物；ホスファゼン系難燃剤などを用いることができる。 The sealing sheet 10 preferably contains a flame retardant component. This can reduce the expansion of combustion when ignition occurs due to component short-circuiting or heat generation. As the flame retardant composition, for example, various metal hydroxides such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide, complex metal hydroxides; phosphazene flame retardants, etc. should be used. Can do.
　少量でも難燃効果を発揮するという観点から、ホスファゼン系難燃剤に含まれるリン元素の含有率は、１２重量％以上であることが好ましい。 From the viewpoint of exhibiting a flame retardant effect even in a small amount, the content of the phosphorus element contained in the phosphazene flame retardant is preferably 12% by weight or more.
　封止用シート１０中の難燃剤成分の含有量は、全有機成分（無機フィラーを除く）中、１０重量％以上が好ましく、１５重量％以上がより好ましい。１０重量％以上であると、難燃性が良好に得られる。封止用シート１０中の熱可塑性樹脂の含有量は、３０重量％以下が好ましく、２５重量％以下がより好ましい。３０重量％以下であると、硬化物の物性低下（具体的には、ガラス転移温度や高温樹脂強度などの物性の低下）が少ない傾向がある。 The content of the flame retardant component in the sealing sheet 10 is preferably 10% by weight or more and more preferably 15% by weight or more in the total organic components (excluding the inorganic filler). A flame retardance is favorably acquired as it is 10 weight% or more. The content of the thermoplastic resin in the sealing sheet 10 is preferably 30% by weight or less, and more preferably 25% by weight or less. When the content is 30% by weight or less, there is a tendency that there is little decrease in physical properties of the cured product (specifically, physical properties such as glass transition temperature and high-temperature resin strength).
　封止用シート１０は、シランカップリング剤を含むことが好ましい。シランカップリング剤としては特に限定されず、３－グリシドキシプロピルトリメトキシシランなどが挙げられる。 It is preferable that the sealing sheet 10 contains a silane coupling agent. The silane coupling agent is not particularly limited, and examples thereof include 3-glycidoxypropyltrimethoxysilane.
　封止用シート１０中のシランカップリング剤の含有量は、０．１～３重量％が好ましい。０．１重量％以上であると、硬化物の強度が十分得られ吸水率を低くできる。３重量％以下であると、アウトガス量を低くできる。 The content of the silane coupling agent in the sealing sheet 10 is preferably 0.1 to 3% by weight. When the content is 0.1% by weight or more, sufficient strength of the cured product can be obtained and the water absorption rate can be lowered. If it is 3% by weight or less, the outgas amount can be lowered.
　封止用シート１０は、顔料を含むことが好ましい。顔料としては特に限定されず、カーボンブラックなどが挙げられる。 The sealing sheet 10 preferably contains a pigment. The pigment is not particularly limited, and examples thereof include carbon black.
　封止用シート１０中の顔料の含有量は、０．１～２重量％が好ましい。０．１重量％以上であると、レーザーマーキング等によるマーキングをした際の良好なマーキング性が得られる。２重量％以下であると、硬化物強度が十分得られる。 The content of the pigment in the sealing sheet 10 is preferably 0.1 to 2% by weight. When the content is 0.1% by weight or more, good marking properties can be obtained when marking is performed by laser marking or the like. When the content is 2% by weight or less, a cured product strength is sufficiently obtained.
　なお、樹脂組成物には、上記の各成分以外に必要に応じて、他の添加剤を適宜配合できる。 In addition to the above components, other additives can be appropriately added to the resin composition as necessary.
　封止用シート１０の０～２００℃における最低溶融粘度は、１０００００Ｐａ・ｓ以下であることが好ましく、５００００Ｐａ・ｓ以下であることがより好ましい。前記封止用シートの０～２００℃における最低溶融粘度が１０００００Ｐａ・ｓ以下であると、熱プレス時の溶融粘度が１０００００Ｐａ・ｓ以下となる。その結果、機能層の側面の少なくとも一部が前記封止用シートを構成する樹脂により被覆された構造を形成し易くすることができる。封止用シート１０の０～２００℃における最低溶融粘度は、熱可塑性樹脂の添加量によりコントロールすることができる。
　また、封止用シート１０の０～２００℃における最低溶融粘度は、１０００Ｐａ・ｓ以上であることが好ましく、１００００Ｐａ・ｓ以上であることがより好ましい。封止用シート１０の０～２００℃における最低溶融粘度が１０００Ｐａ・ｓ以上であると、積層体２０の上に封止用シート１０を配置した際、封止用シート１０の外周部分（直下に電子部品がない部分）が垂れ下がることを抑制し、封止用シートと実装基板との間に空気が閉じ込められた状態でプレスされるのを抑制することができる。その結果、プレス後に得られる電子部品装置にボイドの発生が起りにくくなる。
　封止用シート１０の０～２００℃における最低溶融粘度は、熱可塑性樹脂、熱硬化性樹脂、無機充填剤等の添加量によりコントロールすることができる。 The minimum melt viscosity at 0 to 200 ° C. of the sealing sheet 10 is preferably 100000 Pa · s or less, and more preferably 50000 Pa · s or less. When the minimum melt viscosity at 0 to 200 ° C. of the sealing sheet is 100,000 Pa · s or less, the melt viscosity at the time of hot pressing is 100,000 Pa · s or less. As a result, it is possible to easily form a structure in which at least a part of the side surface of the functional layer is covered with the resin constituting the sealing sheet. The minimum melt viscosity at 0 to 200 ° C. of the sealing sheet 10 can be controlled by the amount of thermoplastic resin added.
In addition, the minimum melt viscosity at 0 to 200 ° C. of the sealing sheet 10 is preferably 1000 Pa · s or more, and more preferably 10,000 Pa · s or more. When the minimum melt viscosity at 0 to 200 ° C. of the sealing sheet 10 is 1000 Pa · s or more, when the sealing sheet 10 is disposed on the laminate 20, the outer peripheral portion of the sealing sheet 10 (directly below) It is possible to suppress the portion where there is no electronic component) from drooping, and to suppress pressing in a state where air is trapped between the sealing sheet and the mounting substrate. As a result, voids are less likely to occur in the electronic component device obtained after pressing.
The minimum melt viscosity at 0 to 200 ° C. of the sealing sheet 10 can be controlled by the addition amount of a thermoplastic resin, a thermosetting resin, an inorganic filler or the like.
　封止用シート１０は、単層構造であってもよいし、２以上の封止用シートを積層した多層構造であってもよいが、層間剥離のおそれがなく、シート厚の均一性が高くし易いという理由から、単層構造が好ましい。 The encapsulating sheet 10 may have a single layer structure or a multilayer structure in which two or more encapsulating sheets are laminated, but there is no risk of delamination and the sheet thickness is highly uniform. A single layer structure is preferred because it is easy to do.
　封止用シート１０の厚さは、特に限定されないが、封止用シートとして使用する観点から、例えば、５０μｍ～２０００μｍである。 The thickness of the sealing sheet 10 is not particularly limited, but is, for example, 50 μm to 2000 μm from the viewpoint of use as a sealing sheet.
　封止用シート１０の製造方法は特に限定されないが、封止用シート１０を形成するための樹脂組成物の混練物を調製し、得られた混練物を塗工する方法や、得られた混練物をシート状に塑性加工する方法が好ましい。これにより、溶剤を使用せずに封止用シート１０を作製できるので、電子部品（半導体チップ２３）が揮発した溶剤により影響を受けることを抑制することができる。 Although the manufacturing method of the sheet | seat 10 for sealing is not specifically limited, The method of coating the kneaded material obtained by preparing the kneaded material of the resin composition for forming the sheet | seat 10 for sealing, and the obtained kneading | mixing A method of plastically processing an object into a sheet is preferable. Thereby, since the sheet | seat 10 for sealing can be produced without using a solvent, it can suppress that the electronic component (semiconductor chip 23) is influenced by the volatilized solvent.
　具体的には、後述の各成分をミキシングロール、加圧式ニーダー、押出機などの公知の混練機で溶融混練することにより混練物を調製し、得られた混練物を塗工又は塑性加工によりシート状にする。混練条件として、温度は、上述の各成分の軟化点以上であることが好ましく、例えば３０～１５０℃、エポキシ樹脂の熱硬化性を考慮すると、好ましくは４０～１４０℃、さらに好ましくは６０～１２０℃である。時間は、例えば１～３０分間、好ましくは５～１５分間である。 Specifically, a kneaded product is prepared by melt-kneading each component described below with a known kneader such as a mixing roll, a pressure kneader, or an extruder, and the obtained kneaded product is coated or plastically processed into a sheet. Shape. As the kneading conditions, the temperature is preferably equal to or higher than the softening point of each component described above, for example, 30 to 150 ° C., preferably 40 to 140 ° C., more preferably 60 to 120 in consideration of the thermosetting property of the epoxy resin. ° C. The time is, for example, 1 to 30 minutes, preferably 5 to 15 minutes.
　混練は、減圧条件下（減圧雰囲気下）で行うことが好ましい。これにより、脱気できるとともに、混練物への気体の侵入を防止できる。減圧条件下の圧力は、好ましくは０．１ｋｇ／ｃｍ２以下、より好ましくは０．０５ｋｇ／ｃｍ２以下である。減圧下の圧力の下限は特に限定されないが、例えば、１×１０－４ｋｇ／ｃｍ２以上である。 The kneading is preferably performed under reduced pressure conditions (under reduced pressure atmosphere). Thereby, while being able to deaerate, the penetration | invasion of the gas to a kneaded material can be prevented. The pressure under reduced pressure is preferably 0.1 kg / cm 2 or less, more preferably 0.05 kg / cm 2 or less. The lower limit of the pressure under reduced pressure is not particularly limited, but is, for example, 1 × 10 −4 kg / cm 2 or more.
　混練物を塗工して封止用シート１０を形成する場合、溶融混練後の混練物は、冷却することなく高温状態のままで塗工することが好ましい。塗工方法としては特に制限されず、バーコート法、ナイフコート法、スロットダイ法等を挙げることができる。塗工時の温度としては、上述の各成分の軟化点以上が好ましく、エポキシ樹脂の熱硬化性および成形性を考慮すると、例えば４０～１５０℃、好ましくは５０～１４０℃、さらに好ましくは７０～１２０℃である。 When the kneaded material is applied to form the sealing sheet 10, it is preferable that the kneaded material after melt-kneading is applied in a high temperature state without cooling. The coating method is not particularly limited, and examples thereof include a bar coating method, a knife coating method, and a slot die method. The temperature at the time of coating is preferably not less than the softening point of each component described above, and considering the thermosetting property and moldability of the epoxy resin, for example, 40 to 150 ° C., preferably 50 to 140 ° C., more preferably 70 to 120 ° C.
　混練物を塑性加工して封止用シート１０を形成する場合、溶融混練後の混練物は、冷却することなく高温状態のままで塑性加工することが好ましい。塑性加工方法としては特に制限されず、平板プレス法、Ｔダイ押出法、スクリューダイ押出法、ロール圧延法、ロール混練法、インフレーション押出法、共押出法、カレンダー成形法などなどが挙げられる。塑性加工温度としては上述の各成分の軟化点以上が好ましく、エポキシ樹脂の熱硬化性および成形性を考慮すると、例えば４０～１５０℃、好ましくは５０～１４０℃、さらに好ましくは７０～１２０℃である。 When the kneaded material is plastically processed to form the sealing sheet 10, it is preferable that the kneaded material after melt-kneading is plastically processed in a high temperature state without cooling. The plastic working method is not particularly limited, and examples thereof include a flat plate pressing method, a T-die extrusion method, a screw die extrusion method, a roll rolling method, a roll kneading method, an inflation extrusion method, a coextrusion method, and a calendar molding method. The plastic working temperature is preferably not less than the softening point of each component described above, and is 40 to 150 ° C., preferably 50 to 140 ° C., more preferably 70 to 120 ° C. in consideration of the thermosetting property and moldability of the epoxy resin. is there.
　なお、封止用シート１０は、適当な溶剤に封止用シート１０を形成するための樹脂等を溶解、分散させてワニスを調整し、このワニスを塗工して得ることもできる。 The sealing sheet 10 can also be obtained by dissolving and dispersing a resin or the like for forming the sealing sheet 10 in an appropriate solvent to adjust the varnish and coating the varnish.
　（機能層）
　機能層８は、封止用シート１０により半導体チップ２３を封止した際の封止用シート１０の角部分の割れや欠けを抑制する機能や、封止後の反りを防止する機能を有する。 (Functional layer)
The functional layer 8 has a function of suppressing cracking and chipping of corner portions of the sealing sheet 10 when the semiconductor chip 23 is sealed by the sealing sheet 10 and a function of preventing warping after sealing.
　機能層８を構成する材質としては、金属箔やプラスチック板を好適に用いることができる。上記金属としては、４２ニッケルー鉄合金（４２アロイ）、ＳＵＳ３０４等のステンレス、銅、アルミニウム、ニッケル等があげられる。なかでも、放熱性向上の観点から、銅が好ましい。 As a material constituting the functional layer 8, a metal foil or a plastic plate can be suitably used. Examples of the metal include 42 nickel-iron alloy (42 alloy), stainless steel such as SUS304, copper, aluminum, nickel, and the like. Among these, copper is preferable from the viewpoint of improving heat dissipation.
　上記プラスチック板における素材としては、例えば、ポリエチレン（ＰＥ）、ポリプロピレン（ＰＰ）、エチレン－プロピレン共重合体等のオレフィン系樹脂；エチレン－酢酸ビニル共重合体（ＥＶＡ）、アイオノマー樹脂、エチレン－（メタ）アクリル酸共重合体、エチレン－（メタ）アクリル酸エステル（ランダム、交互）共重合体等のエチレンをモノマー成分とする共重合体；ポリエチレンテレフタレート（ＰＥＴ）、ポリエチレンナフタレート（ＰＥＮ）、ポリブチレンテレフタレート（ＰＢＴ）等のポリエステル；アクリル系樹脂；ポリ塩化ビニル（ＰＶＣ）；ポリウレタン；ポリカーボネート；ポリフェニレンスルフィド（ＰＰＳ）；ポリアミド（ナイロン）、全芳香族ポリアミド（アラミド）等のアミド系樹脂；ポリエーテルエーテルケトン（ＰＥＥＫ）；ポリイミド；ポリエーテルイミド；ポリ塩化ビニリデン；ＡＢＳ（アクリロニトリル－ブタジエン－スチレン共重合体）；セルロース系樹脂；シリコーン樹脂；フッ素樹脂などが挙げられる。 Examples of the material for the plastic plate include olefin resins such as polyethylene (PE), polypropylene (PP), and ethylene-propylene copolymer; ethylene-vinyl acetate copolymer (EVA), ionomer resin, and ethylene- (meta ) Copolymers containing ethylene as a monomer component such as acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer; polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polybutylene Polyester such as terephthalate (PBT); acrylic resin; polyvinyl chloride (PVC); polyurethane; polycarbonate; polyphenylene sulfide (PPS); amide resin such as polyamide (nylon), wholly aromatic polyamide (aramid); Ether ketone (PEEK); polyimides; polyetherimides; polyvinylidene chloride; ABS (acrylonitrile - butadiene - styrene copolymer); cellulosic resins; silicone resins; and fluorine resins.
　機能層８の厚さとしては、５０～５０００μｍが好ましく、１００～１０００μｍがより好ましい。機能層８の厚さを５０μｍ以上とすることにより、封止後の反りを緩和することができ、５０００μｍ以下とすることにより、プレス時に封止用シートに熱が伝わりやすくなり、電子部品の埋め込み性を向上させることができる。 The thickness of the functional layer 8 is preferably 50 to 5000 μm, more preferably 100 to 1000 μm. By setting the thickness of the functional layer 8 to 50 μm or more, warping after sealing can be alleviated, and by setting the thickness to 5000 μm or less, heat can be easily transferred to the sealing sheet during pressing, and the electronic component is embedded. Can be improved.
　積層シート８において、封止用シート１０と機能層７とは平面視で同一形状であり、積層シート８の外周の長さが５００ｍｍ以上であることが好ましく、８００ｍｍ以上であることがより好ましい。また、積層シート８の外周の長さの上限は特に限定されないが、実用的な範囲を考慮して、例えば３０００ｍｍ以下とすることができる。複数の半導体チップ２３を外周の長さが５００ｍｍ以上という大面積の封止用シート１０にて封止する場合、封止用シート１０の半導体チップ２３への追従性は、より高いことが要望される。本実施形態では、後述するように、下側加熱板３２と封止用シート１０との間に積層体２０が介在しているため、複数の半導体チップ２３を外周の長さが５００ｍｍ以上という大面積の封止用シート１０にて封止する場合にも、封止用シート１０の半導体チップ２３への充分な追従性を確保することが可能となる。 In the laminated sheet 8, the sealing sheet 10 and the functional layer 7 have the same shape in a plan view, and the length of the outer periphery of the laminated sheet 8 is preferably 500 mm or more, and more preferably 800 mm or more. Moreover, although the upper limit of the outer periphery length of the lamination sheet 8 is not specifically limited, Considering a practical range, it can be 3000 mm or less, for example. When encapsulating a plurality of semiconductor chips 23 with a large-area encapsulating sheet 10 having an outer peripheral length of 500 mm or more, higher followability of the encapsulating sheet 10 to the semiconductor chip 23 is desired. The In the present embodiment, as will be described later, since the stacked body 20 is interposed between the lower heating plate 32 and the sealing sheet 10, the peripheral length of the plurality of semiconductor chips 23 is as large as 500 mm or more. Even when sealing with the sealing sheet 10 having an area, it is possible to ensure sufficient followability of the sealing sheet 10 to the semiconductor chip 23.
　積層シート８は、封止用シート１０と機能層８とを積層することにより得られる。積層方法については特に限定されず、例えば、封止用シート１０と機能層８とを別々に作成しておき、これらを圧着等により貼り合わせる方法や機能層８上に封止用シートを形成するための混練物等を塗工する方法等が挙げられる。 The laminated sheet 8 is obtained by laminating the sealing sheet 10 and the functional layer 8. The lamination method is not particularly limited. For example, the sealing sheet 10 and the functional layer 8 are prepared separately, and the sealing sheet is formed on the functional layer 8 by bonding them together by pressure bonding or the like. For example, a method of coating a kneaded material for the purpose.
　［積層シートと積層体とを配置する工程］
　積層体を準備する工程（工程Ａ）、及び、積層シートを準備する工程（工程Ｂ）の後、図３に示すように、下側加熱板３２上に積層体２０を半導体チップ２３が実装された面を上にして配置するとともに、積層体２０の半導体チップ２３が実装された面上に積層シート８を、封止用シート１０面を下側にして配置する（工程Ｃ）。この工程Ｃにおいては、下側加熱板３２上にまず積層体２０を配置し、その後、積層体２０上に積層シート８を配置してもよく、積層体２０上に積層シート８を先に積層し、その後、積層体２０と積層シート８とが積層された積層物を下側加熱板３２上に配置してもよい。 [Process of arranging a laminated sheet and a laminated body]
After the step of preparing the laminate (step A) and the step of preparing the laminate sheet (step B), the semiconductor chip 23 is mounted on the lower heating plate 32 as shown in FIG. The laminated sheet 8 is arranged on the surface of the laminated body 20 on which the semiconductor chip 23 is mounted, and the sealing sheet 10 side is arranged on the lower side (step C). In this step C, the laminated body 20 may be first arranged on the lower heating plate 32, and then the laminated sheet 8 may be arranged on the laminated body 20, and the laminated sheet 8 is laminated on the laminated body 20 first. Then, a laminate in which the laminate 20 and the laminate sheet 8 are laminated may be disposed on the lower heating plate 32.
　［電子部品を封止用シートに埋め込む工程］
　前記工程Ｃの後、図４（ａ）に示すように、下側加熱板３２と上側加熱板３４とにより熱プレスして、半導体チップ２３（電子部品）を封止用シート１０に埋め込む（工程Ｄ）。封止用シート１０は、半導体チップ２３及びそれに付随する要素を外部環境から保護するための封止樹脂として機能することとなる。これにより、半導体ウエハ２２上に実装されている半導体チップ２３が封止用シート１０に埋め込まれた構造体２６が得られる。 [Process of embedding electronic components in sealing sheet]
After the step C, as shown in FIG. 4A, the semiconductor chip 23 (electronic component) is embedded in the sealing sheet 10 by hot pressing with the lower heating plate 32 and the upper heating plate 34 (steps). D). The sealing sheet 10 functions as a sealing resin for protecting the semiconductor chip 23 and its accompanying elements from the external environment. Thereby, the structure 26 in which the semiconductor chip 23 mounted on the semiconductor wafer 22 is embedded in the sealing sheet 10 is obtained.
　半導体チップ２３を封止用シート１０に埋め込む際の熱プレス条件としては、温度が、例えば、４０～１００℃、好ましくは５０～９０℃であり、圧力が、例えば、０．１～１０ＭＰａ、好ましくは０．５～８ＭＰａであり、時間が、例えば０．３～１０分間、好ましくは０．５～５分間である。これにより、半導体チップ２３が封止用シート１０に埋め込まれた電子部品装置を得ることができる。また、封止用シート１０の半導体チップ２３及び半導体ウエハ２２への密着性および追従性の向上を考慮すると、減圧条件下においてプレスすることが好ましい。
　前記減圧条件としては、圧力が、例えば、０．１～５ｋＰａ、好ましくは、０．１～１００Ｐａであり、減圧保持時間（減圧開始からプレス開始までの時間））が、例えば、５～６００秒であり、好ましくは、１０～３００秒である。 As hot press conditions for embedding the semiconductor chip 23 in the sealing sheet 10, the temperature is, for example, 40 to 100 ° C., preferably 50 to 90 ° C., and the pressure is, for example, 0.1 to 10 MPa, preferably Is 0.5 to 8 MPa, and the time is, for example, 0.3 to 10 minutes, preferably 0.5 to 5 minutes. Thereby, an electronic component device in which the semiconductor chip 23 is embedded in the sealing sheet 10 can be obtained. In view of improving the adhesion and followability of the sealing sheet 10 to the semiconductor chip 23 and the semiconductor wafer 22, it is preferable to press under reduced pressure.
The decompression conditions include, for example, a pressure of 0.1 to 5 kPa, preferably 0.1 to 100 Pa, and a decompression holding time (a time from the start of decompression to the start of press)) of, for example, 5 to 600 seconds. Preferably, it is 10 to 300 seconds.
　工程Ｄの後、すなわち、半導体チップ２３（電子部品）を封止用シート１０に埋め込んだ後、機能層８の側面の少なくとも一部が封止用シート１０を構成する樹脂により被覆されている（図４（ｂ）参照）。このような構成は、半導体チップ２３（電子部品）を封止用シート１０に埋め込む際の圧力により、封止用シート１０を構成する樹脂の一部が側面方向に押し出されるとともに、機能層８の一部が封止用シート１０に埋め込まれた結果、得られる。 After step D, that is, after the semiconductor chip 23 (electronic component) is embedded in the sealing sheet 10, at least a part of the side surface of the functional layer 8 is covered with the resin constituting the sealing sheet 10 ( (Refer FIG.4 (b)). In such a configuration, a part of the resin constituting the sealing sheet 10 is pushed out in the lateral direction by the pressure when the semiconductor chip 23 (electronic component) is embedded in the sealing sheet 10, and the functional layer 8 This is obtained as a result of being partially embedded in the sealing sheet 10.
　ここで、工程Ｄの後の機能層８の厚さをｈ、機能層８における前記樹脂により被覆されている部分（封止用シート１０を構成する樹脂により被覆されている部分）の厚さをｄとしたとき、工程Ｄの後の前記ｄは、［０．０１×ｈ］以上であることが好ましく、［０．０５×ｈ］以上であることがより好ましい。また、工程Ｄの後の前記ｄは、［０．９９×ｈ］以下であることが好ましく、［０．５０×ｈ］以下であることがより好ましい。前記工程Ｄの後の前記ｄが［０．０１×ｈ］以上であると、封止用シートの角部分の割れや欠けをより好適に抑制することができる。一方、前記工程Ｄの後の前記ｄが［０．９９×ｈ］以下であると、前記樹脂により製造用の装置（例えば、上側加熱板３４）が汚染されることを防止することができる。工程Ｄの後の前記ｄの数値は、工程Ｄを行なう際の条件（例えば、圧力や加圧時間）や、封止用シート１０を構成する樹脂の選択により、コントロールすることができる。 Here, the thickness of the functional layer 8 after the step D is h, and the thickness of the portion of the functional layer 8 covered with the resin (the portion covered with the resin constituting the sealing sheet 10) is set. When d, the d after the step D is preferably [0.01 × h] or more, and more preferably [0.05 × h] or more. Further, the d after the step D is preferably [0.99 × h] or less, and more preferably [0.50 × h] or less. When the d after the step D is [0.01 × h] or more, cracks and chips at the corners of the sealing sheet can be more suitably suppressed. On the other hand, when the d after the step D is [0.99 × h] or less, it is possible to prevent the manufacturing apparatus (for example, the upper heating plate 34) from being contaminated by the resin. The numerical value of d after the process D can be controlled by the conditions (for example, pressure and pressurization time) when the process D is performed and the selection of the resin constituting the sealing sheet 10.
　［熱硬化工程］
　次に、封止用シート１０を熱硬化処理して電子部品装置２８を形成する（図５参照）。具体的には、例えば、半導体ウエハ２２上に実装されている半導体チップ２３が封止用シート１０に埋め込まれた構造体２６全体を加熱することにより封止体２８を得る。 [Thermosetting process]
Next, the electronic sheet device 28 is formed by thermosetting the sealing sheet 10 (see FIG. 5). Specifically, for example, the sealing body 28 is obtained by heating the entire structure 26 in which the semiconductor chip 23 mounted on the semiconductor wafer 22 is embedded in the sealing sheet 10.
　熱硬化処理の条件として、加熱温度が好ましくは１００℃以上、より好ましくは１２０℃以上である。一方、加熱温度の上限が、好ましくは２００℃以下、より好ましくは１８０℃以下である。加熱時間が、好ましくは１０分以上、より好ましくは３０分以上である。一方、加熱時間の上限が、好ましくは１８０分以下、より好ましくは１２０分以下である。また、必要に応じて加圧してもよく、好ましくは０．１ＭＰａ以上、より好ましくは０．５ＭＰａ以上である。一方、上限は好ましくは１０ＭＰａ以下、より好ましくは５ＭＰａ以下である。 As the conditions for the thermosetting treatment, the heating temperature is preferably 100 ° C or higher, more preferably 120 ° C or higher. On the other hand, the upper limit of the heating temperature is preferably 200 ° C. or lower, more preferably 180 ° C. or lower. The heating time is preferably 10 minutes or more, more preferably 30 minutes or more. On the other hand, the upper limit of the heating time is preferably 180 minutes or less, more preferably 120 minutes or less. Moreover, you may pressurize as needed, Preferably it is 0.1 Mpa or more, More preferably, it is 0.5 Mpa or more. On the other hand, the upper limit is preferably 10 MPa or less, more preferably 5 MPa or less.
　［ダイシング工程］
　続いて、封止体２８のダイシングを行ってもよい（図６参照）。これにより、半導体チップ２３単位での電子部品装置２９を得ることができる。 [Dicing process]
Subsequently, the sealing body 28 may be diced (see FIG. 6). As a result, the electronic component device 29 in units of the semiconductor chip 23 can be obtained.
　［基板実装工程］
　必要に応じて、電子部品装置２９に対して（半導体ウエハ２２の半導体チップ２３とは反対側の面に対して）再配線及びバンプを形成し、これを別途の基板（図示せず）に実装する基板実装工程を行うことができる。電子部品装置２９の前記別途の基板への実装には、フリップチップボンダーやダイボンダーなどの公知の装置を用いることができる。この基板実装工程を行なった場合、ＦＯＷＬＰ（ファンアウト型ウエハレベルパッケージ）を得ることができる。 [Board mounting process]
If necessary, rewiring and bumps are formed on the electronic component device 29 (on the surface of the semiconductor wafer 22 opposite to the semiconductor chip 23) and mounted on a separate substrate (not shown). A substrate mounting process can be performed. For mounting the electronic component device 29 on the separate substrate, a known device such as a flip chip bonder or a die bonder can be used. When this substrate mounting process is performed, FOWLP (fan-out type wafer level package) can be obtained.
　以上、本実施形態に係る電子部品装置の製造方法によれば、熱プレスして、半導体チップ２３を封止用シート１０に埋め込んで封止する工程Ｄを有し、前記工程Ｄの後に、機能層８の側面の少なくとも一部が封止用シート１０を構成する樹脂により被覆される。半導体チップ２３を封止する樹脂においては、特に、角部分に割れ欠けが発生し易い。しかしながら、本実施形態に係る電子部品装置の製造方法によれば、機能層８の側面の少なくとも一部が封止用シート１０を構成する樹脂により被覆されているため、封止用シート１０の角部分の割れや欠けを抑制することができる。 As described above, according to the manufacturing method of the electronic component device according to the present embodiment, the method includes the step D of hot pressing to embed the semiconductor chip 23 in the sealing sheet 10 and seal the function. At least a part of the side surface of the layer 8 is covered with a resin constituting the sealing sheet 10. In the resin for sealing the semiconductor chip 23, cracks are particularly likely to occur at the corners. However, according to the method for manufacturing the electronic component device according to the present embodiment, at least a part of the side surface of the functional layer 8 is covered with the resin that constitutes the sealing sheet 10, and thus the corners of the sealing sheet 10. It is possible to suppress cracking and chipping of the part.
　上述した実施形態では、本発明の電子部品として半導体チップ２３、被実装体として半導体ウエハ２２を使用した場合について説明したが、本発明はこの例に限定されず、前記電子部品として半導体チップ以外のものを使用し、前記被実装体として半導体ウエハ以外のものを使用した場合にも上記電子部品装置の製造方法を適用することができる。 In the embodiment described above, the case where the semiconductor chip 23 is used as the electronic component of the present invention and the semiconductor wafer 22 is used as the mounted body has been described, but the present invention is not limited to this example, and the electronic component other than the semiconductor chip is used. Even when a thing other than a semiconductor wafer is used as the mounted body, the manufacturing method of the electronic component device can be applied.
　以下に、この発明の好適な実施例を例示的に詳しく説明する。ただし、この実施例に記載されている材料や配合量などは、特に限定的な記載がない限りは、この発明の範囲をそれらのみに限定する趣旨のものではない。 Hereinafter, preferred embodiments of the present invention will be described in detail by way of example. However, the materials, blending amounts, and the like described in the examples are not intended to limit the scope of the present invention only to those unless otherwise specified.
　実施例で使用した成分について説明する。
　エポキシ樹脂ａ：新日鐵化学（株）製のＹＳＬＶ－８０ＸＹ（ビスフェノールＦ型エポキシ樹脂、エポキン当量２００ｇ／ｅｑ、軟化点８０℃）
　フェノール樹脂ａ：明和化成社製のＭＥＨ－７８５１－ＳＳ（ビフェニルアラルキル骨格を有するフェノール樹脂、水酸基当量２０３ｇ／ｅｑ、軟化点６７℃）
　無機充填剤ａ：電気化学工業社製のＦＢ－９４５４ＦＣ（溶融球状シリカ、平均粒子径２０μｍ）
　硬化促進剤ａ：四国化成工業社製の２ＰＨＺ－ＰＷ（２－フェニル－４，５－ジヒドロキシメチルイミダゾール）
　熱可塑性樹脂ａ：カネカ社製のＳＩＢＳＴＥＲ　０７２Ｔ（スチレン－イソブチレン－スチレンブロック共重合体） The components used in the examples will be described.
Epoxy resin a: YSLV-80XY manufactured by Nippon Steel Chemical Co., Ltd. (bisphenol F type epoxy resin, epkin equivalent 200 g / eq, softening point 80 ° C.)
Phenol resin a: MEH-7851-SS manufactured by Meiwa Kasei Co., Ltd. (phenol resin having a biphenylaralkyl skeleton, hydroxyl group equivalent 203 g / eq, softening point 67 ° C.)
Inorganic filler a: FB-9454FC (fused spherical silica, average particle size 20 μm) manufactured by Denki Kagaku Kogyo Co., Ltd.
Curing accelerator a: 2PHZ-PW (2-phenyl-4,5-dihydroxymethylimidazole) manufactured by Shikoku Kasei Kogyo Co., Ltd.
Thermoplastic resin a: SIBSTER 072T (styrene-isobutylene-styrene block copolymer) manufactured by Kaneka Corporation
　（封止用シートの作成）
　実施例１～２、比較例１
　表１に記載の配合比に従い、各成分を配合し、ロール混練機により６０～１２０℃、１０分間、減圧条件下（０．０１ｋｇ／ｃｍ２）で溶融混練し、混練物を調製した。次いで、得られた混練物を、１２０℃の条件下、スロットダイ法により塗工してシート状に形成し、表１に示す厚さの封止用シートを作製した。なお、実施例、比較例の各封止用シートの形状は、円形状であり、直径、外周長さは表１の通りである。 (Creation of sealing sheet)
Examples 1 and 2, Comparative Example 1
Each component was blended according to the blending ratio shown in Table 1, and melt-kneaded in a roll kneader at 60 to 120 ° C. for 10 minutes under reduced pressure conditions (0.01 kg / cm 2 ) to prepare a kneaded product. Subsequently, the obtained kneaded material was applied by a slot die method under a condition of 120 ° C. to form a sheet, and a sealing sheet having a thickness shown in Table 1 was produced. In addition, the shape of each sheet | seat for sealing of an Example and a comparative example is circular shape, and a diameter and outer periphery length are as Table 1. FIG.
　（最低溶融粘度の測定）
　粘弾性測定装置ＡＲＥＳ（レオメトリックス・サイエンティフィック社製）を用いて各サンプルを測定したときの０～２００℃における溶融粘度の最低値を最低溶融粘度とした。測定条件は、昇温速度１０℃／ｍｉｎ、ひずみ：２０％、周波数：０．１Ｈｚとした。 (Measurement of minimum melt viscosity)
The lowest melt viscosity at 0 to 200 ° C. when each sample was measured using a viscoelasticity measuring device ARES (manufactured by Rheometrics Scientific) was defined as the lowest melt viscosity. The measurement conditions were a heating rate of 10 ° C./min, a strain of 20%, and a frequency of 0.1 Hz.
　（積層シートの作成）
　実施例、及び、比較例の封止用シートに機能層を貼り付け、積層シートを得た。機能層には、実施例、比較例とも共通のものを用いた。具体的は、円形状、厚さ５０μｍの銅箔を用いた。機能層の直径、外周長さは表１の通りである。なお、貼り付けの際は、封止用シートと機能層の中心点が平面視で一致するように貼り付けた。 (Create a laminated sheet)
The functional layer was affixed on the sealing sheet of an Example and a comparative example, and the lamination sheet was obtained. The functional layer used was common to the examples and comparative examples. Specifically, a copper foil having a circular shape and a thickness of 50 μm was used. Table 1 shows the diameter and outer peripheral length of the functional layer. At the time of attachment, the attachment was performed so that the center point of the sealing sheet and the functional layer coincided in plan view.
　（電子部品が実装された基板の準備）
　電子部品が実装された基板を準備した。基板には、直径３００ｍｍ、厚さ７００μｍの半導体ウェハを用いた。電子部品は、縦１０ｍｍ、横１０ｍｍ、厚さ５００μｍの半導体チップを用い、前記基板上に１０ｍｍの間隔（１の電子部品の端部と隣の電子部品の端部との距離）をあけて、縦１４個×横１４個に実装した。なお、パンプの高さは、５０μｍである。 (Preparation of a board on which electronic components are mounted)
A board on which electronic components were mounted was prepared. As the substrate, a semiconductor wafer having a diameter of 300 mm and a thickness of 700 μm was used. The electronic component uses a semiconductor chip having a length of 10 mm, a width of 10 mm, and a thickness of 500 μm, and an interval of 10 mm (distance between the end of one electronic component and the end of the next electronic component) is formed on the substrate. It was mounted in 14 vertical x 14 horizontal. The height of the pump is 50 μm.
　（評価用サンプルの作成）
　瞬時真空積層装置ＶＳ００８－１５１５（ミカドテクノス（株）製）の下側加熱板上に、電子部品が実装された面を上にして前記基板を配置し、その上に、積層シートを、封止用シート面を下側にして配置した。その後、減圧下で熱プレスした。熱プレス条件は、表１の通りである。
　熱プレスの後、１５０℃のオーブンにて１時間加熱した。その後、室温（２３℃）にまで自然冷却し、評価用サンプルとした。 (Create sample for evaluation)
The substrate is placed on the lower heating plate of the instantaneous vacuum laminating apparatus VS008-1515 (manufactured by Mikado Technos Co., Ltd.) with the surface on which the electronic components are mounted facing up, and the laminated sheet is sealed thereon The sheet was placed with the sheet surface facing down. Then, it hot-pressed under pressure reduction. The hot press conditions are as shown in Table 1.
After hot pressing, it was heated in an oven at 150 ° C. for 1 hour. Then, it cooled naturally to room temperature (23 degreeC), and was set as the sample for evaluation.
　（被覆率の測定）
　測定顕微鏡システム（ＣＣＳ－ＣＯＲＥ　ＰＬＵＳ、イノテック社製）を用い、各サンプルについて、機能層における樹脂により被覆されている部分の厚さｄを測定した。その後、下記（式１）により被覆率を算出した。なお、本実施例、比較例では、［最初の機能層の厚さ］は、５０μｍである。結果を表１に示す。
　　（式１）　　　［被覆率］＝ｄ／［最初の機能層の厚さ］ (Measurement of coverage)
Using a measuring microscope system (CCS-CORE PLUS, manufactured by Innotek), the thickness d of the portion of each functional layer covered with the resin was measured for each sample. Thereafter, the coverage was calculated according to the following (formula 1). In the present example and the comparative example, [the thickness of the first functional layer] is 50 μm. The results are shown in Table 1.
(Formula 1) [Coverage] = d / [Thickness of the first functional layer]
　（剥離性）
　測定顕微鏡システム（ＣＣＳ－ＣＯＲＥ　ＰＬＵＳ、イノテック社製）を用い、封止用シートと機能層との間に剥離があるか否かを観察した。剥離がなかった場合を〇、剥離があった場合を×として評価した。なお、剥離がなかった場合は、機能層により封止用シートの角部分の割れや欠けを抑制することが可能となる。一方、剥離がある場合は、封止用シートの角部分の割れや欠けを抑制しにくくなる。 (Peelability)
A measurement microscope system (CCS-CORE PLUS, manufactured by Innotek) was used to observe whether there was any separation between the sealing sheet and the functional layer. The case where there was no peeling was evaluated as ◯, and the case where there was peeling was evaluated as x. In addition, when there is no peeling, it becomes possible to suppress the crack and the chip | tip of the corner | angular part of the sheet | seat for sealing with a functional layer. On the other hand, when there is peeling, it becomes difficult to suppress cracks and chips at the corners of the sealing sheet.
Figure JPOXMLDOC01-appb-T000001
  
Figure JPOXMLDOC01-appb-T000001
  
　８　積層シート
１０　封止用シート
１２　機能層
２０　積層体
２２　半導体ウェハ（被実装体）
２３　半導体チップ（電子部品）
２８　電子部品装置
３２　下側加熱板 8 Laminated Sheet 10 Sealing Sheet 12 Functional Layer 20 Laminated Body 22 Semiconductor Wafer (Mounted Body)
23 Semiconductor chip (electronic parts)
28 Electronic component device 32 Lower heating plate

Claims (11)

  1. 　電子部品が被実装体に実装された積層体を準備する工程Ａと、
    　電子部品を封止するための封止用シートと前記封止用シートとは異なる材質からなる機能層とを有する積層シートを準備する工程Ｂと、
    　加熱板上に前記積層体を前記電子部品が実装された面を上にして配置するとともに、前記積層体の前記電子部品が実装された面上に前記積層シートを、前記封止用シート面を下側にして配置する工程Ｃと、
    　前記工程Ｃの後、熱プレスして、前記電子部品を前記封止用シートに埋め込んで封止する工程Ｄとを具備し、
    　前記工程Ｄの後に、前記機能層の側面の少なくとも一部が前記封止用シートを構成する樹脂により被覆されていることを特徴とする半導体装置の製造方法。     Step A for preparing a laminate in which the electronic component is mounted on the mounted body;
    Preparing a laminated sheet having a sealing sheet for sealing an electronic component and a functional layer made of a material different from the sealing sheet; and
    The laminated body is disposed on a heating plate with the surface on which the electronic component is mounted facing upward, and the laminated sheet is disposed on the surface of the laminated body on which the electronic component is mounted, and the sealing sheet surface is disposed on the surface. Step C to be placed on the lower side,
    After the step C, it is hot-pressed, and includes the step D of embedding the electronic component in the sealing sheet and sealing it,
    After the step D, at least a part of the side surface of the functional layer is covered with a resin constituting the sealing sheet.
  2. 　前記機能層の厚さをｈ、前記機能層における前記樹脂により被覆されている部分の厚さをｄとしたとき、前記工程Ｄの後の前記ｄが［０．０１×ｈ］以上［０．９９×ｈ］以下であることを特徴とする請求項１に記載の半導体装置の製造方法。 When the thickness of the functional layer is h and the thickness of the portion of the functional layer covered with the resin is d, the d after the step D is [0.01 × h] or more and [0. 99.times.h] or less, The method of manufacturing a semiconductor device according to claim 1.
  3. 　前記封止用シートの０～２００℃における最低溶融粘度が１０００００Ｐａ・ｓ以下であることを特徴とする請求項１又は２に記載の電子部品装置の製造方法。 3. The method of manufacturing an electronic component device according to claim 1, wherein the sealing sheet has a minimum melt viscosity at 0 to 200 ° C. of 100000 Pa · s or less.
  4. 　前記封止用シートと前記機能層とは平面視で同一形状であり、前記積層シートの外周の長さが５００ｍｍ以上であることを特徴とする請求項１～３のいずれか１に記載の電子部品装置の製造方法。 The electron according to any one of claims 1 to 3, wherein the sealing sheet and the functional layer have the same shape in a plan view, and an outer circumference length of the laminated sheet is 500 mm or more. A method for manufacturing a component device.
  5. 　前記封止用シートは、エポキシ樹脂、硬化剤、及び、無機充填剤を含有していることを特徴とする請求項１～４のいずれか１に記載の電子部品装置の製造方法。 The method of manufacturing an electronic component device according to any one of claims 1 to 4, wherein the sealing sheet contains an epoxy resin, a curing agent, and an inorganic filler.
  6. 　請求項１～５のいずれか１に記載の電子部品装置の製造方法に使用されることを特徴とする積層シート。 A laminated sheet characterized by being used in the method for manufacturing an electronic component device according to any one of claims 1 to 5.
  7. 　前記封止用シートの０～２００℃における最低溶融粘度が１０００００Ｐａ・ｓ以下であることを特徴とする請求項６に記載の積層シート。 The laminated sheet according to claim 6, wherein the sealing sheet has a minimum melt viscosity at 0 to 200 ° C of 100000 Pa · s or less.
  8. 　前記封止用シートと前記機能層とは平面視で同一形状であり、前記積層シートの外周の長さが５００ｍｍ以上であることを特徴とする請求項６又は７に記載の積層シート。 The laminated sheet according to claim 6 or 7, wherein the sealing sheet and the functional layer have the same shape in a plan view, and the outer circumferential length of the laminated sheet is 500 mm or more.
  9. 　前記封止用シートは、エポキシ樹脂、硬化剤、及び、無機充填剤を含有していることを特徴とする請求項６～８のいずれか１に記載の積層シート。 The laminated sheet according to any one of claims 6 to 8, wherein the sealing sheet contains an epoxy resin, a curing agent, and an inorganic filler.
  10. 　電子部品が被実装体に実装された積層体と、
    　前記電子部品を封止した封止用シートと、
    　前記封止用シートの前記電子部品とは反対側に積層された機能層とを有し、
    　前記機能層の側面の少なくとも一部が前記封止用シートを構成する樹脂により被覆されていることを特徴とする電子部品装置。     A laminated body in which electronic components are mounted on a mounted body;
    A sealing sheet sealing the electronic component;
    A functional layer laminated on the side opposite to the electronic component of the sealing sheet;
    At least a part of a side surface of the functional layer is covered with a resin constituting the sealing sheet.
  11. 　前記機能層の厚さをｈ、前記機能層における前記樹脂により被覆されている部分の厚さをｄとしたとき、前記ｄが［０．０１×ｈ］以上［０．９９×ｈ］以下であることを特徴とする請求項１０に記載の電子部品装置。 When the thickness of the functional layer is h and the thickness of the portion covered with the resin in the functional layer is d, the d is [0.01 × h] or more and [0.99 × h] or less. The electronic component device according to claim 10, wherein the electronic component device is provided.
PCT/JP2014/060797 2013-05-23 2014-04-16 Electronic-component-device manufacturing method, laminated sheet, and electronic-component device WO2014188825A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020157031254A KR20160013011A (en) 2013-05-23 2014-04-16 Electronic-component-device manufacturing method, laminated sheet, and electronic-component device
SG11201509542VA SG11201509542VA (en) 2013-05-23 2014-04-16 Method for manufacturing electronic component device, laminated sheet, and electronic component device
CN201480028638.4A CN105210184A (en) 2013-05-23 2014-04-16 Electronic-component-device manufacturing method, laminated sheet, and electronic-component device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-108845 2013-05-23
JP2013108845A JP5735036B2 (en) 2013-05-23 2013-05-23 Electronic component device manufacturing method and laminated sheet

Publications (1)

Publication Number Publication Date
WO2014188825A1 true WO2014188825A1 (en) 2014-11-27

Family

ID=51933390

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2014/060797 WO2014188825A1 (en) 2013-05-23 2014-04-16 Electronic-component-device manufacturing method, laminated sheet, and electronic-component device

Country Status (6)

Country Link
JP (1) JP5735036B2 (en)
KR (1) KR20160013011A (en)
CN (1) CN105210184A (en)
SG (1) SG11201509542VA (en)
TW (1) TW201508844A (en)
WO (1) WO2014188825A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105826278A (en) * 2015-01-23 2016-08-03 日东电工株式会社 Sheet for sealing hollow electronic device

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6369405B2 (en) 2015-07-07 2018-08-08 信越化学工業株式会社 Thermosetting resin composition for semiconductor encapsulation
JP6597471B2 (en) 2016-05-02 2019-10-30 信越化学工業株式会社 Method for sealing a large-area semiconductor element mounting substrate
CN109155256B (en) * 2016-05-25 2022-06-24 昭和电工材料株式会社 Sealing structure, method for producing same, and sealing material
JP6520872B2 (en) 2016-09-01 2019-05-29 信越化学工業株式会社 Thermosetting resin composition for semiconductor encapsulation
JP2018064054A (en) * 2016-10-14 2018-04-19 日立化成株式会社 Encapsulation material, and manufacturing method of encapsulation structure
US11799442B2 (en) 2017-09-29 2023-10-24 Nagase Chemtex Corporation Manufacturing method of mounting structure, and laminate sheet therefor
JP6718106B2 (en) * 2017-12-14 2020-07-08 ナガセケムテックス株式会社 Manufacturing method of mounting structure
CN116888714A (en) * 2021-02-01 2023-10-13 长濑化成株式会社 Sealing method for electronic component mounting board and thermosetting sheet

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10163400A (en) * 1996-11-28 1998-06-19 Nitto Denko Corp Semiconductor device and two-layer lead frame used for it
JP2005206665A (en) * 2004-01-21 2005-08-04 Nitto Denko Corp Sheet semiconductor sealing resin composition
JP2010225752A (en) * 2009-03-23 2010-10-07 Tdk Corp Resin-sealed electronic component, and method of manufacturing the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3462282B2 (en) * 1994-11-29 2003-11-05 株式会社東芝 Resin-sealed semiconductor device, electronic circuit device, and method of manufacturing the same
JP3957246B2 (en) 1998-12-04 2007-08-15 日東電工株式会社 Semiconductor element sealing sheet, semiconductor device manufacturing method using the same, and semiconductor device
JP2007307843A (en) * 2006-05-20 2007-11-29 Apic Yamada Corp Resin molding method/device
JP2011001473A (en) * 2009-06-19 2011-01-06 Hitachi Chem Co Ltd Insulating material for electronic component
JP5385247B2 (en) * 2010-12-03 2014-01-08 信越化学工業株式会社 Wafer mold material and semiconductor device manufacturing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10163400A (en) * 1996-11-28 1998-06-19 Nitto Denko Corp Semiconductor device and two-layer lead frame used for it
JP2005206665A (en) * 2004-01-21 2005-08-04 Nitto Denko Corp Sheet semiconductor sealing resin composition
JP2010225752A (en) * 2009-03-23 2010-10-07 Tdk Corp Resin-sealed electronic component, and method of manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105826278A (en) * 2015-01-23 2016-08-03 日东电工株式会社 Sheet for sealing hollow electronic device
CN105826278B (en) * 2015-01-23 2020-02-21 日东电工株式会社 Sheet for sealing hollow electronic device

Also Published As

Publication number Publication date
CN105210184A (en) 2015-12-30
SG11201509542VA (en) 2015-12-30
JP2014229771A (en) 2014-12-08
JP5735036B2 (en) 2015-06-17
TW201508844A (en) 2015-03-01
KR20160013011A (en) 2016-02-03

Similar Documents

Publication Publication Date Title
JP5735036B2 (en) Electronic component device manufacturing method and laminated sheet
WO2014156837A1 (en) Hollow sealing resin sheet and production method for hollow package
TW201532151A (en) Production method for semiconductor package
WO2016189998A1 (en) Sealing resin sheet for substrate having electronic component built therein and method for manufacturing substrate having electronic component built therein
WO2016181761A1 (en) Sealing resin sheet
WO2016080116A1 (en) Semiconductor device production method
JP6302693B2 (en) Hollow sealing resin sheet and method for producing hollow package
WO2014188826A1 (en) Method for manufacturing electronic-component device
WO2014156777A1 (en) Hollow electronic device sealing sheet and production method for hollow electronic device package
WO2014188824A1 (en) Method for manufacturing electronic-component device
WO2016080117A1 (en) Separator-equipped sealing sheet and semiconductor device production method
JP6630861B2 (en) Sealing sheet with separator and method of manufacturing semiconductor device
JP6434181B2 (en) Hollow type electronic device sealing sheet and method for manufacturing hollow type electronic device package
JP5735030B2 (en) Resin sheet for sealing electronic device and method for manufacturing electronic device package
WO2014168047A1 (en) Resin sheet with separator, electronic component device manufacturing method and electronic component device
TW201430966A (en) Method for production of sealed body, frame-shaped spacer for production of sealed body, sealed body and electronic instrument
WO2014156834A1 (en) Hollow sealing resin sheet and production method for hollow package

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14800310

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20157031254

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 14800310

Country of ref document: EP

Kind code of ref document: A1