WO2014188572A1 - 基板保持方法及び装置、並びに露光方法及び装置 - Google Patents
基板保持方法及び装置、並びに露光方法及び装置 Download PDFInfo
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- WO2014188572A1 WO2014188572A1 PCT/JP2013/064414 JP2013064414W WO2014188572A1 WO 2014188572 A1 WO2014188572 A1 WO 2014188572A1 JP 2013064414 W JP2013064414 W JP 2013064414W WO 2014188572 A1 WO2014188572 A1 WO 2014188572A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
Definitions
- the present invention relates to a substrate holding technique for holding a substrate, an exposure technique using the substrate holding technique, and a device manufacturing technique using the exposure technique.
- an exposure apparatus such as a so-called stepper or scanning stepper used in a photolithography process for producing an electronic device (microdevice) such as a semiconductor element, for example, a disk-shaped semiconductor wafer (hereinafter, referred to as a substrate to be exposed)
- a so-called pin chuck type in which, for example, three lift pins (center pins) that can be raised and lowered for transferring the wafer are arranged between a large number of small pin-shaped protrusions. Wafer holders are used.
- the SEMI (Semiconductor Equipment ⁇ Materials International) standard (SEMI standards) of the wafer diameter is almost 125 mm, 150 mm, 200 mm, and 300 mm every few years. It increases at a rate of 1.25 to 1.5 times.
- the lift pins provided on a conventional wafer holder are a bar-shaped member having a tip portion that contacts the wafer and a lower portion thereof having substantially the same size, and vacuum suction that uses the suction force generated in the negative pressure region at the center portion.
- An exhaust hole is formed (for example, see Patent Document 1).
- the SEMI standard has standardized a wafer having a diameter of 450 mm.
- the suction force to the wafer is not sufficient, and there is a possibility that local deformation (distortion) occurs in the wafer at the lift pin portion.
- a gap space
- the flatness of the exposed area of the wafer may be reduced, and the exposure accuracy (resolution, etc.) may be partially reduced.
- the aspect of the present invention suppresses a decrease in local flatness of the substrate even when the substrate to be held is placed at a target position even if the substrate is large.
- the purpose is to be able to.
- a substrate holding device for holding a substrate, a substrate holding portion on which the substrate is placed, a support member provided so as to be movable up and down with respect to the substrate holding portion, And a support unit for supporting the back surface of the substrate in the suction region is provided at the end of the support member. Is done.
- a substrate holding device for holding a substrate, comprising: a substrate holding portion on which the substrate is placed; and a support member provided so as to be movable up and down with respect to the substrate holding portion, The end portion of the support member has a void portion, and a porous member that adsorbs the back surface of the substrate by setting at least a portion of the void portion to a negative pressure and surrounds at least a portion of the porous member.
- a substrate holding device having a partition wall formed.
- a substrate holding device for holding a substrate, comprising: a substrate holding portion on which the substrate is placed; and a support member provided to be movable up and down with respect to the substrate holding portion, The end portion of the support member includes an annular first support portion that supports the back surface of the substrate, and a second support portion that supports the back surface of the substrate in a region surrounded by the first support portion.
- a substrate holding device A substrate holding device is provided.
- the substrate holding according to the aspect of the present invention for holding the substrate to be exposed
- An exposure apparatus includes an apparatus and a stage that holds and moves the base member of the substrate holding apparatus.
- a substrate holding method using the substrate holding apparatus according to the aspect of the present invention wherein the tip of the support member of the substrate holding apparatus is moved above the base member; Receiving the substrate at the tip of the support member, the first suction portion sucking the substrate through the tip, and mounting the tip of the support member on the base member. Lowering along the normal direction of the placement surface, releasing the suction of the substrate by the first suction portion, and placing the substrate on the placement surface of the base member from the tip of the support member And a substrate holding method is provided.
- the substrate in an exposure method in which a pattern is illuminated with exposure light and the substrate is exposed through the pattern with the exposure light, the substrate is held using the substrate holding method of the aspect of the present invention. And moving the substrate to an exposure position.
- the method includes forming a pattern of a photosensitive layer on a substrate using the exposure apparatus or the exposure method according to the aspect of the present invention, and processing the substrate on which the pattern is formed. A device manufacturing method is provided.
- the support member that supports the back surface of the substrate within the adsorption region at the end of the support member, the porous member that adsorbs the back surface of the substrate, or the region surrounded by the annular first support member Since the 2nd support part which supports the back surface of a board
- FIG. 2 It is a figure which shows schematic structure of the exposure apparatus which concerns on 1st Embodiment. It is a top view which shows the wafer stage of FIG. 2 is a block diagram showing a control system and the like of the exposure apparatus of FIG. (A) is a top view which shows the wafer holding apparatus of FIG. 1, (B) is a figure which shows the cross section and control part which looked at FIG. 4 (A) from the front. (A) is an enlarged plan view showing the lift pins of the wafer holding device, (B) is a longitudinal sectional view of the lift pins shown in FIG. 5 (A) with a part thereof omitted, and (C) shows the lift pins of the modification.
- An enlarged plan view, (D) is a longitudinal sectional view with a part omitted showing a lift pin of another modification. It is a flowchart which shows an example of the exposure method containing the holding method of a wafer.
- (A) is sectional drawing which shows the state which delivered the wafer to the raising / lowering pin
- (B) is sectional drawing which shows the state which the center part of the wafer contacted the wafer holder.
- (A) is an expanded sectional view which shows a part of wafer supported by the raising / lowering pin which concerns on embodiment
- (B) is an enlarged sectional view which shows a part of wafer supported by the raising / lowering pin of a comparative example.
- FIG. 10 It is a top view which shows the wafer holding apparatus of a modification.
- A is an enlarged plan view showing a lift pin of a modified example
- B is a longitudinal sectional view showing a part of the lift pin of FIG. 10 (A)
- C is a lift pin of another modified example.
- D is a longitudinal cross-sectional view in which a part of the lifting pins shown in FIG. 10 (C) is omitted
- (E) is an enlarged plan view showing lifting pins of still another modified example.
- A) is an enlarged plan view showing a lift pin of another modification
- (B) is an enlarged plan view showing a lift pin of still another modification
- (C) is an enlarged plane showing a lift pin of another modification.
- FIG. 11 (A) is an enlarged plan view showing a lift pin according to the second embodiment, and (B) is a longitudinal sectional view with a part omitted showing the lift pin of FIG. 11 (A). It is a flowchart which shows an example of the manufacturing method of an electronic device.
- FIG. 1 shows a schematic configuration of an exposure apparatus EX provided with a wafer holding device (substrate holding device) according to this embodiment.
- the exposure apparatus EX is a scanning exposure type projection exposure apparatus composed of a scanning stepper (scanner).
- the exposure apparatus EX includes a projection optical system PL (projection unit PU).
- the Z axis is taken in parallel to the optical axis AX of the projection optical system PL
- the Y axis is set in the direction in which the reticle R and the wafer (semiconductor wafer) W are relatively scanned in a plane orthogonal to the Z axis, the Z axis and the Y axis.
- the description will be made by taking the X axis in a direction perpendicular to the axis.
- the rotation directions around the axes parallel to the X axis, the Y axis, and the Z axis are also referred to as ⁇ x, ⁇ y, and ⁇ z directions.
- the plane orthogonal to the Z axis (XY plane) is substantially parallel to the horizontal plane
- the ⁇ Z direction is the direction of the vertical line.
- the exposure apparatus EX includes an illumination system ILS disclosed in, for example, US Patent Application Publication No. 2003/0025890, and illumination light (exposure light) IL (for example, an ArF excimer laser having a wavelength of 193 nm) from the illumination system ILS. It includes a reticle stage RST that holds a reticle R (mask) that is illuminated by light or a harmonic of a solid-state laser (such as a semiconductor laser). Further, the exposure apparatus EX includes a projection unit PU including a projection optical system PL that exposes the wafer W (substrate) with the illumination light IL emitted from the reticle R, a wafer holding apparatus 8 that holds the wafer W (see FIG. 3), A wafer stage WST that moves while supporting a mechanical portion of the wafer holding device 8, a control system, and the like (see FIG. 3) are provided.
- illumination light (exposure light) IL for example, an ArF excimer laser having a wavelength of 193
- the reticle R is held on the upper surface of the reticle stage RST by vacuum suction or the like, and a circuit pattern or the like is formed on the pattern surface (lower surface) of the reticle R.
- the reticle stage RST can be finely driven in an XY plane on a reticle base (not shown) by a reticle stage drive system 25 shown in FIG. 3 including, for example, a linear motor and the like, and scanning designated in the scanning direction (Y direction). It can be driven at speed.
- Position information within the moving surface of the reticle stage RST (including the position in the X direction, the Y direction, and the rotation angle in the ⁇ z direction) is transferred to the moving mirror 22 (or mirror-finished) by the reticle interferometer 24 including a laser interferometer. It is always detected with a resolution of, for example, about 0.5 to 0.1 nm via the stage end face.
- the measurement value of the reticle interferometer 24 is sent to the main controller 20 comprising a computer shown in FIG.
- Main controller 20 controls reticle stage drive system 25 based on the measurement value, thereby controlling the position and speed of reticle stage RST.
- the projection unit PU arranged below the reticle stage RST includes a lens barrel 40 and a projection optical system PL having a plurality of optical elements held in a predetermined positional relationship within the lens barrel 40.
- a flat frame (hereinafter referred to as a measurement frame) 16 is supported by a frame mechanism (not shown) via a plurality of vibration isolation devices (not shown), and the projection unit PU is formed on the measurement frame 16. It is installed in the opening via a flange portion FL.
- the projection optical system PL is, for example, telecentric on both sides (or one side on the wafer side) and has a predetermined projection magnification ⁇ (for example, a reduction magnification such as 1/4 or 1/5).
- the wafer W includes, for example, a photo-resist (photosensitive material) coated on a large disk-shaped substrate having a diameter of 300 mm or 450 mm made of a semiconductor such as silicon with a thickness of about several tens to 200 nm.
- the thickness of the substrate having a diameter of 300 mm is, for example, 775 ⁇ m, and the thickness of the substrate having a diameter of 450 mm is currently assumed to be, for example, about 900 to 1100 ⁇ m (for example, about 925 ⁇ m).
- a nozzle unit 32 constituting a part of the local liquid immersion device 38 is provided so as to surround the periphery of the part.
- the nozzle unit 32 is connected to a liquid supply device 34 and a liquid recovery device 36 (see FIG. 3) via a supply tube 31A and a recovery tube 31B for supplying an exposure liquid Lq (for example, pure water). . If the immersion type exposure apparatus is not used, the local immersion apparatus 38 may not be provided.
- the exposure apparatus EX also aligns the wafer W with an aerial image measurement system (not shown) that measures the position of the image of the alignment mark (reticle mark) of the reticle R by the projection optical system PL in order to align the reticle R.
- an image processing system (FIA system) alignment system AL an irradiation system 90a and a light receiving system 90b, and a multi-point oblique incidence system that measures Z positions at a plurality of locations on the surface of the wafer W.
- An autofocus sensor hereinafter referred to as a multi-point AF system
- an encoder 6 for measuring position information of wafer stage WST are provided.
- the aerial image measurement system is provided in, for example, wafer stage WST.
- the alignment system AL is arranged in an X-direction (non-scanning direction) in a region having a length of about the diameter of the wafer W arranged away from the projection optical system PL in the ⁇ Y direction. Consists of five-lens alignment systems ALc, ALb, ALa, ALd, and ALe arranged at approximately equal intervals, and is configured so that wafer marks at different positions on the wafer W can be simultaneously detected by the five-lens alignment systems ALa to ALe. ing.
- the loading that is the center position of wafer stage WST when loading wafer W at a position away from ⁇ Y direction with respect to alignment systems ALa to ALe and to a position shifted to the ⁇ X direction and + X direction to some extent.
- the position LP and the unloading position UP which is the center position of the wafer stage WST when the wafer W is unloaded, are set.
- a wafer transfer robot WLD (see FIG. 1) for loading the wafer W is installed near the loading position LP, and a wafer transfer robot (not shown) for loading the wafer W is installed near the unloading position UP. Yes.
- the irradiation system 90a and the light receiving system 90b of the multi-point AF system 90 are arranged along an area between the alignment systems ALa to ALe and the projection optical system PL as an example.
- the wafer stage WST is driven to move the wafer W from the exposure start position below the projection optical system PL substantially in the Y direction.
- the measurement result of the multipoint AF system 90 and the measurement result of the alignment system AL are supplied to the main controller 20.
- wafer stage WST is supported in a non-contact manner on an upper surface WBa parallel to the XY surface of base board WB via a plurality of unillustrated vacuum preload type static air bearings (air pads), for example.
- Wafer stage WST can be driven in the X and Y directions by a stage drive system 18 (see FIG. 3) including, for example, a planar motor or two sets of orthogonal linear motors.
- Wafer stage WST is provided in stage body 30 driven in the X direction and Y direction, wafer table WTB as a Z stage mounted on stage body 30, and wafer for stage body 30.
- a Z stage driving unit that relatively finely drives the Z position of the table WTB and the tilt angles in the ⁇ x direction and the ⁇ y direction.
- a wafer holder 54 Inside the opening at the center of wafer table WTB is provided a wafer holder 54 that holds wafer W on a mounting surface that is substantially parallel to the XY plane by vacuum suction or the like, and includes wafer holder 54 and a mechanical portion of wafer holding device 8. 50 (see FIG. 3) is configured.
- the wafer stage main body 30 itself may be configured to be driven in six degrees of freedom (X, Y, Z, ⁇ x, ⁇ y, ⁇ z directions) by a planar motor or the like.
- the upper surface of wafer table WTB has a surface that is substantially flush with the surface of wafer W and has been subjected to a liquid repellency treatment with respect to liquid Lq, and has a rectangular outer shape (contour) and a central portion of wafer W.
- a flat plate member 28 having a high flatness in which a circular opening that is slightly larger than the mounting area is formed.
- the plate body 28 has a circular shape as shown in the plan view of the wafer stage WST in FIG.
- the diffraction gratings 12A to 12D are reflection type diffraction gratings on which a two-dimensional grating pattern having a period of about 1 ⁇ m with the X direction and the Y direction as periodic directions is formed.
- the measurement grating 16 is irradiated with measurement laser light (measurement light) on the diffraction gratings 12 ⁇ / b> C and 12 ⁇ / b> D so that the projection optical system PL is sandwiched in the X direction on the bottom surface of the measurement frame 16.
- a plurality of triaxial detection heads 14 for measuring the relative position in the direction and the Z direction (three-dimensional) are fixed (see FIG. 2). Further, the measurement laser beam is irradiated to the diffraction gratings 12A and 12B so that the projection optical system PL is sandwiched in the Y direction on the bottom surface of the measurement frame 16, and the three-dimensional relative position with respect to the diffraction grating is measured.
- a plurality of triaxial detection heads 14 are fixed. Furthermore, one or a plurality of laser light sources (not shown) for supplying laser light (measurement light and reference light) to the plurality of detection heads 14 are also provided.
- any two detection heads 14 in the line A1 in the Y direction irradiate the diffraction grating 12A or 12B with measurement light, and perform diffraction.
- a detection signal of interference light between the diffracted light generated from the gratings 12A and 12B and the reference light is supplied to the corresponding measurement calculation unit 42 (see FIG. 3).
- any two detection heads 14 in one row A2 in the X direction irradiate measurement light to the diffraction grating 12C or 12D, and interference light between the diffraction light generated from the diffraction gratings 12C and 12D and the reference light.
- the relative positions of the wafer stage WST (wafer W) and the measurement frame 16 (projection optical system PL) in the X, Y, and Z directions is obtained with a resolution of 0.5 to 0.1 nm, for example, and the obtained measurement values are supplied to the switching units 80A and 80B.
- the measurement value switching units 80A and 80B information on the relative position supplied from the measurement calculation unit 42 corresponding to the detection head 14 facing the diffraction gratings 12A to 12D is supplied to the main controller 20.
- a plurality of detection heads 14 in one column A1 and one row A2, a laser light source (not shown), a plurality of measurement calculation units 42, switching units 80A and 80B, and diffraction gratings 12A to 12D constitute a three-axis encoder 6.
- the detailed configuration of such an encoder and the above-described five-eye alignment system is disclosed in, for example, US Patent Application Publication No. 2008/094593.
- main controller 20 determines the position of wafer stage WST (wafer W) in the X, Y, and Z directions with respect to measurement frame 16 (projection optical system PL), and Information such as the rotation angle in the ⁇ z direction is obtained, and wafer stage WST is driven via stage drive system 18 based on this information.
- a laser interferometer that measures the three-dimensional position of wafer stage WST is provided in parallel with encoder 6 or instead of encoder 6, and wafer stage WST is driven using the measured value of this laser interferometer. May be. Then, at the time of exposure of the exposure apparatus EX, the reticle R and the wafer W are first aligned as a basic operation. Thereafter, irradiation of the reticle R with the illumination light IL is started, and an image of a part of the pattern of the reticle R is projected onto one shot area on the surface of the wafer W via the projection optical system PL, while the reticle stage RST.
- the pattern image of the reticle R is transferred to the shot area by a scanning exposure operation that moves the wafer stage WST in synchronization with the Y direction using the projection magnification ⁇ of the projection optical system PL as a speed ratio (synchronous scanning). Thereafter, by repeating the operation (step movement) of moving the wafer W in the X and Y directions via the wafer stage WST and the above scanning exposure operation, for example, by the immersion method and the step-and-scan method.
- the pattern image of the reticle R is transferred to the entire shot area of the wafer W.
- the detection head 14 of the encoder 6 since the optical path lengths of the measurement light and the diffracted light are shorter than those of the laser interferometer, the influence of the air fluctuation on the measurement value is very small as compared with the laser interferometer. Therefore, the pattern image of the reticle R can be transferred to the wafer W with high accuracy.
- the detection head 14 is arranged on the measurement frame 16 side, and the diffraction gratings 12A to 12D are arranged on the wafer stage WST side.
- the diffraction gratings 12A to 12D may be arranged on the measurement frame 16 side, and the detection head 14 may be arranged on the wafer stage WST side.
- Wafer holding device 8 has a mechanism unit 50 including a wafer holder 54 incorporated in wafer stage WST, and a wafer holder control system 51 that controls the operation of mechanism unit 50 under the control of main controller 20.
- 4A is a plan view showing the wafer holding device 8 of FIG. 1
- FIG. 4B is a longitudinal sectional view (cross-sectional view seen from the front) at the center in the X direction of FIG. 4A, and wafer holder control. System 51 is shown.
- a low-expansion metal Z stage 53 is provided on the upper surface of the stage main body 30 via, for example, voice coil motor type drive units (not shown) that can be displaced in the Z direction. Is retained.
- the Z stage 53 corresponds to the wafer table WTB in FIG.
- the Z stage 53 is a rectangular box-like member with an open top, and a wafer holder 54 is fixed to an inner surface 53 a substantially parallel to the XY plane in the central recess of the Z stage 53, and the wafer W is held by the wafer holder 54.
- the diffraction gratings 12A to 12D are fixed to the upper surface of the side wall portion of the Z stage 53 via the plate body.
- the bottom of the wafer holder 54 has a circular flat plate shape, and a ring-shaped closed side wall 54c is integrally formed on the upper surface of the bottom.
- the size of the side wall part 54c is slightly smaller than the edge part of the peripheral edge of the wafer W to be held, and the peripheral edge part of the wafer W is supported by the side wall part 54c. If the diameter of the wafer W is 300 mm or 450 mm, the outer diameter of the side wall portion 54c is formed slightly smaller than 300 mm or 450 mm, respectively.
- the wafer holder 54 is formed of a material having a very small coefficient of thermal expansion. Such materials include ultra-low expansion glass (eg Corning's ULE (trade name)), ultra-low expansion glass ceramics (eg Schott's Zerodur (trade name)), or silicon carbide (SiC). ) Etc. can be used.
- a large number of positions are formed at each lattice point of a two-dimensional lattice having an equilateral triangle as a basic shape.
- a pin-shaped protrusion 54b is integrally formed.
- the interval between the plurality of adjacent protrusions 54b is, for example, several millimeters (for example, about 3 mm), and the upper surfaces of the plurality of protrusions 54b and the side wall parts 54c have extremely high flatness so as to contact the same plane (substantially XY plane). It has been finished.
- a plane including the upper surfaces of the multiple protrusions 54b and the side wall portions 54c is a mounting surface 54a of the wafer W.
- the wafer W to be exposed is placed on the placement surface 54a so that gaps are not generated as much as possible between the back surface of the wafer W and the upper surfaces of the numerous protrusions 54b and the side wall portions 54Ac.
- the wafer holder 54 can be manufactured by, for example, polishing the surface of the protrusion 54b and the like after being integrally formed.
- the wafer W is indicated by a two-dot chain line in FIG.
- a suction hole 55A is formed at substantially the center of the region surrounded by the side wall portion 54c on the upper surface of the wafer holder 54, and a plurality of first peripherals are arranged at substantially equal angular intervals along the first circumference C1 surrounding the suction hole 55A.
- a plurality of second peripheral suction holes 55C are formed at substantially equal angular intervals along a second circumference C2 larger than the first circumference C1 surrounding the central suction hole 55A.
- a plurality of fourth peripheral suction holes 55D are formed at substantially equal angular intervals along a third circumference C3 larger than the second circumference C2 surrounding the central suction hole 55A.
- the suction holes 55A to 55D are formed in a region between the numerous protrusions 54b. Note that it is not always necessary to provide the suction hole 55A at or near the center.
- the number of the first to third peripheral suction holes 55B to 55D is at least six. preferable. However, the number of the first to third peripheral suction holes 55B to 55D is arbitrary, and the number of the suction holes 55B to 55D may be different from each other.
- These suction holes 55A, 55B, 55C, and 55D are respectively independent exhaust passages a1 and a2 in the bottom of the wafer holder 54 and independent exhaust in the Z stage 53, as shown in FIG.
- exhaust pipes 61B1, 61B2, 61B3, 61B4 installed in the stage main body 30 via paths a11, a21, a31, a41.
- the exhaust pipes 61B1 to 61B4 are connected to a vacuum pump 62 outside the wafer stage WST via a flexible exhaust pipe 61A.
- Each of the exhaust pipes 61B1, 61B2, 61B3, 61B4 is connected to the atmosphere by communicating valves (hereinafter referred to as adsorption valves) V11, V12, V13, V14 and the exhaust pipes 61B1 to 61B4 for starting vacuum suction.
- Valves for releasing suction (hereinafter referred to as suction release valves) V21, V22, V23, V24 are mounted. Opening and closing of the valves V11 to V14 and V21 to V24 is controlled by the wafer holder control system 51.
- the wafer holder 54 includes a bottom portion provided with a plurality of suction holes 55A to 55D of the wafer holder 54, exhaust pipes 61A, 61B1 to 61B4, and a vacuum pump 62, and holds the wafer W on the mounting surface 54a of the wafer holder 54 by vacuum suction.
- An adsorption mechanism (second adsorption part) is configured. This adsorption mechanism is a part of the entire adsorption mechanism 52.
- the wafer holder control system 51 can independently control the timing of vacuum suction and release of vacuum suction on the wafer W via the suction holes 55A to 55D. It should be noted that the vacuum suction and the release of the vacuum suction on the wafer W through the suction holes 55A to 55D can be performed synchronously at the same timing.
- the plurality of wafers W are vacuumed at substantially equal angular intervals along the circumference CT between the first circumference C1 and the second circumference C2.
- An elongate member (hereinafter referred to as a lift pin) 44 in the Z direction that can be moved up and down in the Z direction while being held by suction is disposed. Since the lift pins 44 are disposed at a position close to the center of the wafer holder 54, the lift pins 44 can also be called center pins or lift pins. In order to stably support the wafer W, it is preferable that there are at least three lifting pins 44. However, the number is not limited to this.
- the number of lifting pins 44 may be more or less than three.
- the number of lifting pins 44 that is an integral multiple of 3 such as 6 or 9 may be provided.
- three elevating pins 44 are arranged at positions P1, P2, and P3 arranged at substantially equal angular intervals along the circumference CT.
- FIG. 4B shows the lifting pins 44 at the positions P1 and P3.
- the diameter of the circumference CT on which the plurality of lifting pins 44 are arranged is, for example, 180 to 350 mm (of the wafer W The diameter is preferably about 2/5 to 7/9 of the diameter.
- the diameter of the circumference CT may be set to about 200 mm, for example.
- the diameter of the circumference CT on which the lift pins 44 are arranged is such that when the wafer W is supported by the plurality of lift pins 44, the amount of deflection of the wafer W is minimized, that is, the wafer W is at a so-called Bessel point. It may be determined to be supported at a corresponding position.
- the diameter of the circumference CT indicating the position corresponding to the Bessel point when the diameter of the wafer W is 450 mm is about 280 to 310 mm.
- the lift pins 44 are connected to an elongated cylindrical (rod-shaped) shaft portion 45 inserted through openings provided in the wafer holder 54 and the Z stage 53, and an upper end of the shaft portion 45 to be held. Opposite W, it has the tip part 46 which can support wafer W.
- an adsorption hole (flow path) 45a made of a circular through hole for forming a negative pressure space for generating an adsorption force (suction force) when the wafer W is vacuum-adsorbed is formed.
- the outer shape of the tip portion 46 is a circular dish having a diameter larger than the diameter of the shaft portion 45, and the central portion of the tip portion 46 communicates with the suction hole 45 a.
- the wafer holder 54 on which the many protrusions 54b are provided at positions where the openings through which the shaft portions 45 of the elevating pins 44 pass are provided, circular cuts of sizes and depths that can accommodate the tip portions 46, respectively.
- a notch portion (corner portion) 54d is formed.
- the shaft portions 45 of the plurality of lift pins 44 are lowered in the ⁇ Z direction.
- a part of the tip 46 is accommodated in a notch 54d of the wafer holder 54 (a position lower than the protrusion 54d in the Z direction).
- the tip end portion 46 is reliably located at a position (notch portion 54d) away from the wafer W. Can be evacuated.
- the dimension in the Z direction of the tip 46 is smaller than the dimension (thickness) in the Z direction of the protrusion 54b, it is not necessary to provide the notch 54b.
- the suction holes 45a of the shaft portions 45 of the plurality of lifting pins 44 are flexible via the flexible exhaust pipe 60 and the fixed exhaust pipe 61C in the stage body 30, respectively.
- the exhaust pipe 61 ⁇ / b> A is connected to the vacuum pump 62.
- the suction hole of the elevating pin 44 at the position P2 in FIG. 4A communicates with the exhaust pipe 61C.
- the exhaust pipe 61 ⁇ / b> C is also equipped with an adsorption valve V ⁇ b> 3 for starting vacuum adsorption by the elevating pin 44 and an adsorption release valve V ⁇ b> 4 for releasing the vacuum adsorption.
- Wafer holder control system 51 controls the opening and closing of valves V3 and V4.
- a suction mechanism (first suction portion) that holds the wafer W by vacuum suction is configured at the tip portions 46 of the plurality of lift pins 44, including the exhaust pipes 60 and 61C, the valves V3 and V4, and the vacuum pump 62. .
- This adsorption mechanism is a part of the entire adsorption mechanism 52.
- a plurality of vacuum pumps may be prepared, and the first suction unit and the second suction unit may be independently connected to the vacuum pump.
- the first to third peripheral suction holes 55B to 55D are provided at positions at substantially the same angle in the circumferential direction.
- the plurality of lifting pins 44 are disposed between the plurality of suction holes 55B and 55C in the circumferential direction.
- the shaft portion 45 and the tip portion 46 of the lifting pin 44 are integrally formed, but after the shaft portion 45 and the tip portion 46 are individually processed, they are connected by bonding or the like. Also good.
- the lift pins 44 are formed of a material having a very low coefficient of thermal expansion like the wafer holder 54, such as silicon carbide (SiC), silicon carbide ceramics, ultra-low expansion glass, or ultra-low expansion glass ceramics. it can.
- the shaft portions 45 of the plurality of lift pins 44 are raised and lowered in the Z direction with respect to the wafer holder 54 by the drive portions 56 provided on the bottom surface side of the Z stage 53, respectively.
- a drive mechanism such as a voice coil motor or a rack and pinion system can be used.
- a position sensor 57 such as an optical linear encoder for individually measuring the positions in the Z direction of the shaft portions 45 of the plurality of lifting pins 44 is provided.
- the measurement values of the position sensors 57 for the plurality of lifting pins 44 are supplied to the wafer holder control system 51.
- the wafer holder control system 51 individually controls the positions of the plurality of lift pins 44 in the Z direction via the corresponding driving units 56 based on the detection results of the plurality of position sensors 57.
- the wafer holder control system 51 monitors the drive current of the drive unit 56 and can recognize whether or not the lift pins 44 contact the wafer W from the change in the drive current.
- the plurality of lifting pins 44 are driven in the Z direction in synchronization with each other at the same height, but the plurality of lifting pins may be lifted and lowered by a single drive unit.
- a mechanism unit 50 (see FIG. 3) of the wafer holding device 8 is configured including the wafer holder 54, the plurality of elevating pins 44, the drive unit 56, and the suction mechanism 52.
- FIG. 5A is an enlarged plan view showing the lifting pin 44 in FIG. 4B
- FIG. 5B is a longitudinal section in which a part of the shaft portion 45 showing the lifting pin 44 in FIG. 5A is omitted.
- FIG. 5A is an enlarged plan view showing the lifting pin 44 in FIG. 4B
- FIG. 5B is a longitudinal section in which a part of the shaft portion 45 showing the lifting pin 44 in FIG. 5A is omitted.
- the tip 46 provided at the upper end of the shaft 45 of the elevating pin 44 is an opening communicating with the suction hole 45a in the shaft 45 (also the suction hole 45a).
- a suction area 46s surrounded by a disk-shaped bottom portion 46a formed with a circular plate-like portion 46a, a convex circular partition wall portion 46b provided at the peripheral edge of the bottom portion 46a, and a partition wall portion 46b on the upper surface of the bottom portion 46a.
- a plurality of convex portions 46c formed in a region outside the suction hole 45a.
- the plurality of convex portions 46c have a truncated cone shape having the same shape.
- the plurality of convex portions 46c are arranged along the first and second circumferences centered on the circular suction hole 45a.
- the plurality of convex portions 46c may be formed along one circumference surrounding the suction hole 45a, or may be formed along three or more circumferences surrounding the suction hole 45a.
- the upper surface of the plurality of convex portions 46c of the tip end portion 46 and the upper surface of the partition wall portion 46b are each processed with high flatness so as to be in contact with the same plane (virtual plane) Q1.
- the outer shape of the partition wall 46b of the tip 46 is a circle having a diameter ⁇ 3 (see FIG. 5A) of 5 to 15 mm, and the width (thickness) t1 of the partition wall 46b (see FIG. 5B). Is preferably 0.05 to 0.6 mm. Further, the outer diameter ⁇ 3 of the partition wall 46b is more preferably about 6 to 9 mm.
- the tips of the plurality of convex portions 46c have a circular shape having a diameter ⁇ 4 (see FIG. 5B) of 0.05 to 0.6 mm.
- the height h1 (see FIG. 5B) of the partition wall portion 46b and the convex portion 46c is preferably 20 to 500 ⁇ m.
- the cross-sectional area of the shaft portion 45 is set smaller than the cross-sectional area of the outer shape of the partition wall portion 46b of the tip end portion 46.
- the partition wall 46b is a circle having a diameter ⁇ 3 of 5 to 15 mm
- the outer shape of the shaft 45 is a circle having a diameter ⁇ 2 (see FIG. 5B) of about 3 to 5 mm
- the suction hole 45a has a diameter ⁇ 1 ( FIG. 5B shows a circular shape of 1 to 2 mm.
- the outer diameter of the partition wall 46b is about 8 mm
- the outer diameter of the shaft 45 may be about 5 mm.
- the outer shape of the shaft portion 45 may be a polygon or the like having a cross-sectional area close to a circle having a diameter of ⁇ 2
- the outer shape of the partition wall portion 46b may be a polygon or the like having an area close to a circle having a diameter of ⁇ 3.
- the elevating pin 44 having such a tip portion 46 can be manufactured, for example, by polishing the upper surfaces of the partition wall portion 46b and the convex portion 46c after molding a material. Further, the partition wall 46b and the protrusion 46c of the tip 46 of the elevating pin 44 can be formed by etching or CVD.
- the back surface of the wafer W is attracted and held by the lift pins 44, so that the wafer W supported by the lift pins 44 is not deformed such as local warping or bending.
- the portion (surface) that contacts the wafer W at the tip 46 of the elevating pins 44 is preferably slippery. Therefore, the surface of the tip portion 46 of the elevating pin 44 is processed for reducing friction. As an example of surface processing for reducing the friction of the tip 46, there is formation of a diamond-like carbon (DLC) film.
- DLC diamond-like carbon
- the arrangement of the plurality of convex portions 46c of the tip end portion 46 is not limited to the arrangement along the circumference.
- the basic shape is a regular triangle (may be a square or the like) as shown by the lifting pins 44A in FIG.
- the convex portions 46c may be arranged at the respective lattice points of the two-dimensional lattice. Moreover, you may arrange
- the shape of the plurality of convex portions contacting the wafer W of the lifting pins 44 is a two-stage (three or more steps) truncated cone shape as shown by the convex portions 46d of the lifting pins 44B in FIG. But you can.
- the height of the convex portion 46d is preferably 50 to 500 ⁇ m as an example.
- the convex part 46c does not need to be solid, for example, is good also as a cylinder shape (or tubular shape).
- the upper end of the convex portion has an annular shape surrounding the opening, and the annular portion is in contact with the back surface of the wafer. Further, the wafer may be attracted even at the tip of the convex portion 46c by communicating the inside of the cylinder (tube) with the opening of the bottom portion as a flow path.
- the height of the partition wall portion 46b of the tip end portion 46 is made lower by the gap ⁇ than the height of the convex portion 46d (the height of the plane Q1). Good.
- the gap ⁇ is, for example, 50 nm to several ⁇ m.
- step 102 in FIG. 6 the reticle R is loaded onto the reticle stage RST in FIG. 1, and the alignment of the reticle R is performed. Thereafter, in a state where wafer W is not loaded, wafer stage WST moves to loading position LP in FIG. 2, and wafer transfer robot WLD (wafer loader system) in FIG. 1 performs unexposed wafer W coated with a photoresist.
- wafer transfer robot WLD wafer loader system
- step 104 Is transferred onto wafer stage WST (step 104).
- the wafer W placed on the fork-type wafer arm (not shown) at the tip of the wafer transfer robot WLD moves above the wafer holder 54 fixed to the wafer stage WST.
- suction including suction of the lift pins 44
- the suction mechanism 52 of the wafer holding device 8 is released, and the tip 46 of the lift pins 44 is positioned below the wafer W.
- the wafer holder control system 51 starts the vacuum suction operation by the suction holes 45a while raising (moving in the + Z direction) all the lifting pins 44 synchronously. Then, after the tip of the lift pin 44 (the upper surface of the tip portion 46) contacts the back surface of the wafer W, the lift pin 44 is further raised and then the lift pin 44 is stopped (step 106). At this time, the wafer W is adsorbed to the tip of the lift pins 44, and the wafer W and the lift pins 44 are not misaligned. At this time, the wafer W is transferred from the wafer arm to the tip of the lift pins 44. In this state, the wafer arm is retracted in the ⁇ Y direction (step 110).
- step 112 Thereafter, with the wafer W being supported, all the lift pins 44 are lowered at the same speed in synchronization (step 112).
- the suction mechanism 52 causes the vacuum through the suction holes 55A to 55D of the wafer holder 54.
- the suction starts, and when the tip of the lift pins 44 reaches the mounting surface 54a, the suction of the wafer W by the lift pins 44 is released (step 114).
- the elevating pin 44 stops at a position where the tip end portion 46 is lower than the placement surface 54a (a position accommodated in the notch portion 54d).
- the back surface of the wafer W is placed on the placement surface 54a of the wafer holder 54, and the wafer W is transferred from the lift pins 44 to the wafer holder 54 (step 116).
- the suction range may be gradually expanded from the wafer suction via the suction hole 55A at the center of the wafer holder 54 to the wafer suction via the peripheral suction holes 55B, 55C and 55D.
- the wafer W is a large substrate (450 mm wafer) such as a disk-shaped substrate having a diameter of 450 mm, for example, when the wafer W is placed on the placement surface 54 a of the wafer holder 54, A saddle-like deformation, warpage, distortion, or the like is unlikely to occur, and a gap (space) is partially formed between the back surface of the wafer W and the mounting surface 54a (the upper surfaces of the side wall portions 54c and the numerous protrusions 54b).
- the wafer W is held by the wafer holder 54 with high flatness.
- a plurality of protrusions are provided so as to surround the suction hole 45a in the region (suction region) surrounded by the partition wall portion 46b of the tip portion 46 of each lifting pin 44.
- a portion 46c is provided.
- the convex portion 46c in the suction area supports the back surface of the wafer W, so that the wafer W is locally deformed. Can be prevented. For this reason, when the wafer W is delivered from the lift pins 44 to the wafer holder 54, the residual strain of the wafer W is further reduced.
- the wafer stage WST is moved to the unloading position UP, the suction of the wafer W by the suction mechanism 52 of the wafer holding device 8 is released, the wafer W is lifted via the lift pins 44, and the wafer W is unloaded.
- the wafer W is unloaded by passing it to the wafer transfer robot (not shown) (step 122).
- the unloaded wafer W is transferred to a coater / developer (not shown) and developed.
- the operations of steps 104 to 122 are repeated.
- the wafer W can be supported while being stably adsorbed and supported.
- a plurality of convex portions 46 c are provided in a region (suction region) surrounded by the partition wall portion 46 b of the tip portion 46 of the lift pins 44, and the wafer when the wafer W is sucked and supported by the lift pins 44. Since local deformation of W is prevented, the flatness of the wafer W can be kept high when the wafer W is transferred to the wafer holder 54. Accordingly, high throughput can be obtained using the large wafer W, and the exposure accuracy (resolution, etc.) can be kept high on the entire surface of the wafer W, and the pattern image of the reticle R can be exposed with high accuracy.
- the exposure apparatus EX of the present embodiment includes the wafer holding device 8 that holds the wafer W (substrate).
- the wafer holding device 8 includes a wafer holder 54 (substrate holding unit) on which the wafer W is placed, and elevating pins 44 (supporting members) that can be raised and lowered with respect to the wafer holder 54.
- the front end portion 46 (end portion) includes a bottom portion 46a (suction portion) that forms a suction region 46s that sucks the back surface of the wafer W, and a convex portion 46c (support portion) that supports the back surface of the wafer W in the suction region 46s.
- the wafer holding device 8 includes a wafer holder 54 (substrate holding unit) on which the wafer W is placed, and elevating pins 44 (support members) provided so as to be movable up and down with respect to the wafer holder 54.
- the tip 46 (end) of the lift pins 44 is formed in an annular partition 46b (first support) that supports the back surface of the wafer W and an adsorption region 46s (region) surrounded by the partition 46b. And a convex portion 46c (second support portion) that supports the back surface of the wafer W.
- the wafer holding apparatus 8 holds the wafer W by receiving the wafer W at the tip 46 (end) of the lift pins 44 and sucking the wafer W by the lift pins 44, and the tips of the lift pins 44.
- the convex portion 46c is placed in the suction region 46s surrounded by the partition wall portion 46b of the tip portion 46. Since there is a (support portion or second support portion), local deformation of the wafer W at the tip end portion 46 is suppressed. Therefore, even when the wafer W is large, the tip 46 of the lift pins 44 can be enlarged to stably support the wafer W, and when placing the wafer W on the wafer holder 54 (target position), A decrease in local flatness of the wafer W can be suppressed.
- the elevating pins 44 can move in the Z direction (normal direction of the mounting surface 54 a) through the mounting surface 54 a of the wafer W of the wafer holder 54, and the first suction part is provided inside.
- a shaft portion 45 bar-shaped portion provided with suction holes 45a (also referred to as first openings or flow paths) to be exhausted, a tip portion 46 provided at the tip portion of the shaft portion 45 and capable of supporting the wafer W,
- the tip 46 has a bottom 46a that can face the wafer W through a predetermined gap, and a convex portion provided on the bottom 46a so as to surround at least a part of the surface of the bottom 46a that can face the wafer W.
- a plurality of protrusions 46c provided in a region surrounded by the partition wall 46b of the bottom 46a and capable of supporting the wafer W, and surrounded by the bottom 46a and the partition wall 46b.
- the region is the suction hole (flow path) 45a of the shaft portion 45. Communicate with each other. As a result, the back surface of the wafer W can be stably held by vacuum suction at the tip of the lift pins 44.
- the exposure apparatus EX of the present embodiment is an exposure apparatus that illuminates the pattern of the reticle R with exposure illumination light IL (exposure light) and exposes the wafer W with the illumination light IL through the pattern.
- a wafer holding device 8 for holding the wafer W to be exposed and a wafer stage WST that holds and moves the wafer holder 54 of the wafer holding device 8 are provided.
- the exposure method using the exposure apparatus EX includes steps 106 to 116 for holding the wafer W using the wafer holding device 8, and step 118 for moving the held wafer W to the exposure position.
- high throughput can be obtained by increasing the size of the wafer W, and the wafer W can be stably moved when the wafer W is moved from the wafer transfer robot WLD to the wafer holder 54.
- the wafer W is supported and placed on the wafer holder 54, the flatness of the wafer W can be maintained high. For this reason, high exposure accuracy can be obtained.
- the number of lifting pins 44 of the wafer holding device 8 is three, for example.
- the elevating pins 44 are arranged at the center in the region surrounded by the side wall portion 54c of the wafer holder 54, and the circumference CT surrounding the center is formed.
- a plurality of (for example, six) elevating pins 44 may be disposed at equal angular intervals along the wafer W, and the wafer W may be transferred by the plurality of elevating pins 44.
- the Z position of the tip of the central lift pin 44 is made slightly lower than the Z position of the tips of the plurality of lift pins 44 surrounding it, so that the wafer W protrudes toward the wafer holder 54 side.
- the elevating pins 44 may be lowered to transfer the wafer W to the wafer holder 54.
- a rod-shaped member having no suction mechanism and capable of simply moving in the Z direction may be used.
- the small truncated cone-shaped convex portion 46c is provided in the partition wall portion 46b of the distal end portion 46.
- a plurality of curved wall-shaped (or arc-shaped wall-shaped) convex portions 46e1 and 46e2 are provided so as to surround the suction hole 45a in the suction region 46s surrounded by the partition wall portion 46b of the portion 46, and the upper surface (end portion) ) May support the wafer W.
- FIG. 10B is a longitudinal sectional view of the elevating pin 44C of FIG. As shown in FIG.
- the shaft portion 45 of the elevating pin 44C is formed with an elastic hinge portion 45b having a small diameter and being elastically tiltable at a position close to the tip portion 46. Further, although the upper surfaces of the convex portions 46e1 and 46e2 and the upper surface of the partition wall portion 46b are in contact with the same plane Q1, the height of the upper surface of the partition wall portion 46b can be slightly lowered.
- the tip portion 46 can be easily inclined by elastic deformation (allowing the inclination) following the wafer W when the wafer W is bent by its own weight. In some cases, local distortion of the wafer W can be further reduced.
- FIG. 10D is a longitudinal sectional view of the elevating pin 44D of FIG.
- an opening 46g1 communicating with the suction hole 45a is formed in the region between the convex portions 46f1 and 46f2 of the tip portion 46 of the lifting pin 44D, and between the convex portion 46f2 and the partition wall portion 46b. Is formed with an opening 46g2 communicating with the suction hole 45a.
- a tip portion 65 having a branch divided in, for example, three directions is connected to the upper end of the shaft portion 45, and the contour of the tip portion 65 is defined.
- a partition wall 65b may be provided so as to surround, and a plurality of convex portions 65c may be formed so as to surround the suction hole 45a in a region (suction region) surrounded by the partition wall 65b. Even if the lift pins 64 are used, the wafer W can be lifted and lowered without causing local deformation of the wafer W.
- a plurality of curved wall-shaped protrusions are formed so as to surround the suction hole 45a in the region surrounded by the partition wall portion 46b of the tip end portion 46.
- the portions 46e1 and 46e2 may be provided, and at least a part of the wall-like convex portions 46e1 and 46e2 may be a convex portion 46e3 having one end connected to the partition wall portion 46b.
- a plurality of radial holes are disposed so as to surround the suction holes 45a in the region surrounded by the partition wall 46b of the tip 46.
- a wall-like convex portion 46e4 may be provided.
- the end portion of the wall-shaped convex portion 46e4 is connected to the partition wall portion 46b, but the end portion of the convex portion 46e4 may be arranged away from the partition wall portion 46b.
- the partition wall portion 46b is formed in a rim shape (annular shape) with respect to the plurality of radially arranged convex portions 46e4.
- a plurality of frustoconical convex portions 46c are provided in a region surrounded by the partition wall portion 46b of the distal end portion 46, and the partition wall A plurality of convex portions 46c1 having a truncated cone shape on the half surface side connected to the portion 46b may be provided. Accordingly, the plurality of convex portions 46c and 46c1 can be arranged at all lattice points of the regular two-dimensional lattice within the region surrounded by the partition wall portion 46b of the elevating pin 44C3.
- the wafer W can be lifted and lowered without causing local deformation of the wafer W.
- the lifting pins 44, 44A, 44B, 64, 44C3, etc. instead of the frustoconical or multi-stage frustoconical convex portion 46c, for example, a cylindrical shape having a cross-sectional area larger than the area of the upper surface of the convex portion 46c.
- a prismatic (for example, hexagonal prism) -shaped convex part instead of the frustoconical or multi-stage frustoconical convex portion 46c.
- the suction mechanism 52 holds the wafer W by vacuum suction on the wafer holder 54 via the suction holes 55A to 55D and the like, but the wafer W may be held on the wafer holder 54 by electrostatic suction. Is possible. In the case of electrostatic attraction, it is possible to support the wafer W by this flat portion with the mounting surface of the wafer holder 54 as a flat portion without providing a large number of protrusions 54b on the upper surface of the wafer holder 54.
- FIGS. 12 (A) and 12 (B) A second embodiment will be described with reference to FIGS. 12 (A) and 12 (B).
- the basic configuration of the exposure apparatus of this embodiment is the same as that of the exposure apparatus EX of FIG. 1, and the configuration of the wafer holding apparatus is substantially the same as that of the above-described embodiment, but the configuration of the lift pins is different.
- 12A and 12B parts corresponding to those in FIGS. 5A and 5B are denoted by the same or similar reference numerals, and detailed description thereof is omitted.
- FIG. 12A is an enlarged plan view showing the lift pins 44E that can adsorb and support the wafer W according to the present embodiment
- FIG. 12B is a view of the shaft portion 45 showing the lift pins 44E of FIG. It is the longitudinal cross-sectional view which abbreviate
- the distal end portion 46A is formed by a bottom portion 46Aa, a circular partition wall portion 46Ab provided at the peripheral edge of the bottom portion 46Aa, and a porous member having air permeability fixed in a region surrounded by the partition wall portion 46Ab. And a contact portion 48 (opposing portion) that can face the wafer W, and the contact portion 48 communicates with the suction hole 45a (first opening) of the shaft portion 45.
- the outer shape of the partition wall portion 46Ab is formed larger than the outer shape of the shaft portion 45.
- porous ceramics can be used as the contact portion 48.
- the upper surfaces of the partition wall portion 46Ab and the contact portion 48 are finished with high flatness.
- the outer shape of the partition wall portion 46Ab of the tip end portion 46A is preferably a circle having a diameter of 5 to 15 mm, and the width (thickness) of the partition wall portion 46Ab is preferably 0.05 to 0.6 mm.
- the outer shape of the convex portion 46Ac may be a polygon or the like.
- the upper surface of the contact portion 48 and the upper surface of the partition wall portion 46Ab have the same height (on the same plane Q1). Other configurations are the same as those of the embodiment of FIGS. 4 (A) and 4 (B).
- the wafer holding device for holding the wafer W of this embodiment is the wafer W.
- a wafer holder 54 (substrate holding unit) to be placed and lifting pins 44E (supporting members) provided so as to be movable up and down with respect to the wafer holder 54 are provided.
- the tip end portion 46A (end portion) of the elevating pin 44E has a gap portion, and a contact portion 48 made of a porous member that adsorbs the back surface of the wafer W by making at least a part of the gap portion a negative pressure; Partition wall portion 46Ab formed so as to surround the entire circumference (or at least part of the contact portion 48).
- the suction mechanism 52 shown in FIG. 4B is provided via the contact portion 48 (porous member) in the tip 46A.
- the wafer W can be sucked and sucked by sucking the gas.
- the surface of the contact portion 48 in the region surrounded by the partition wall portion 46Ab of the tip portion 46A is flat, local deformation of the wafer W at the tip portion 46A is suppressed.
- the tip 46A of the lift pins 44E can be enlarged to stably support the wafer W, and the wafer W can be mounted on the wafer holder 54 in FIG. 4B.
- the wafer is placed on the placement surface 54a (target position), the local flatness of the wafer W can be prevented from lowering.
- the height of the partition wall portion 46Ab of the elevating pin 44E may be, for example, 50 nm to several ⁇ m lower than the height of the contact portion 48.
- the gas flows through the gap between the partition wall portion 46Ab and the wafer W.
- the wafer W can be stably adsorbed.
- a film for example, a diamond-like carbon film
- a film for improving slippage may be formed on the surface (facing the surface) in contact with the wafer W of the tip portion 46A made of silicon carbide ceramics.
- an elastic hinge part may be provided on the shaft part 45 of the elevating pin 44E so that the tip part 46A can be elastically deformed following the wafer W.
- the wafer is simply placed on the holding unit and is not attracted. In that case, if there is a space or the like under the wafer that does not support the wafer, the portion may be bent due to the weight of the wafer, and local flatness of the wafer may be reduced. Therefore, in such a case, in an apparatus including a holding unit on which a wafer is placed and a support member provided so as to be movable up and down with respect to the holding unit, the wafer is provided at the end of the support member.
- An annular first support portion that supports the back surface of the wafer and a second support portion that supports the back surface of the wafer within a region surrounded by the first support portion may be provided. Thereby, it is possible to suppress a decrease in local flatness of the wafer W.
- the wafer W is circular with a diameter of 300 to 450 mm.
- the size of the wafer W is arbitrary, and the wafer W may have a diameter smaller than 300 mm or larger than 450 mm.
- the electronic device has functions and performances of the electronic device as shown in FIG.
- Step 221 for performing design Step 222 for manufacturing a reticle (mask) based on this design step, Step 223 for manufacturing a substrate (wafer) as a base material of the device and applying a resist, and the exposure apparatus of the above-described embodiment
- Substrate processing step 224 including a step of exposing a reticle pattern to the substrate (photosensitive substrate) by (exposure method), a step of developing the exposed substrate, a heating (curing) and etching step of the developed substrate, and a device assembly step ( (Including processing processes such as dicing, bonding, and packaging) 5, and an inspection step 226, and the like.
- the pattern of the photosensitive layer is formed on the substrate using the exposure apparatus EX or the exposure method of the above embodiment, and the substrate on which the pattern is formed is processed (development, etc.). And doing.
- the exposure apparatus EX or the exposure method of the above embodiment even if the substrate is large, the substrate can be held on the wafer stage with high flatness. Thus, it is possible to manufacture the electronic device with high accuracy while maintaining high exposure accuracy.
- the present invention can be applied to a step-and-repeat type projection exposure apparatus (stepper or the like) in addition to the above-described scanning exposure type projection exposure apparatus (scanner). Furthermore, the present invention can be similarly applied to a dry exposure type exposure apparatus other than an immersion type exposure apparatus.
- the present invention is not limited to application to an exposure apparatus for manufacturing a semiconductor device, for example, an exposure apparatus for a display device such as a liquid crystal display element formed on a square glass plate or a plasma display, It can also be widely applied to an exposure apparatus for manufacturing various devices such as an image sensor (CCD or the like), a micromachine, a thin film magnetic head, and a DNA chip. Furthermore, the present invention can also be applied to an exposure apparatus when manufacturing a mask (photomask, reticle, etc.) on which a mask pattern of various devices is formed using a photolithography process.
- a mask photomask, reticle, etc.
- EX ... exposure device, R ... reticle, W ... wafer, WST ... wafer stage, 8, 8A ... wafer holding device, 44 to 44E ... lift pins, 45 ... shaft, 45a ... suction hole, 46 ... tip, 46b ... Partition part, 46c ... convex part, 52 ... suction mechanism, 54 ... wafer holder, 56 ... drive part, 62 ... vacuum pump
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Abstract
Description
第3の態様によれば、基板を保持する基板保持装置であって、その基板が載置される基板保持部と、その基板保持部に対して昇降可能に設けられる支持部材と、を備え、その支持部材の端部は、その基板の裏面を支持する環状の第1支持部と、その第1支持部で囲まれた領域内で、その基板の裏面を支持する第2支持部と、を有する基板保持装置。基板保持装置が提供される。
第5の態様によれば、本発明の態様の基板保持装置を使用する基板の保持方法であって、その基板保持装置のその支持部材のその先端部をそのベース部材の上方に移動させることと、その支持部材のその先端部にその基板を受けることと、その第1吸着部がその先端部を介してその基板を吸着することと、その支持部材のその先端部をそのベース部材のその載置面の法線方向に沿って降下させることと、その第1吸着部によるその基板に対する吸着を解除することと、その支持部材のその先端部からそのベース部材のその載置面にその基板を渡すことと、を含む基板保持方法が提供される。
第7の様態によれば、本発明の態様の露光装置又は露光方法を用いて基板上に感光層のパターンを形成することと、そのパターンが形成されたその基板を処理することと、を含むデバイス製造方法が提供される。
本発明の第1の実施形態につき図1~図8(B)を参照して説明する。図1は、この実施形態に係るウエハ保持装置(基板保持装置)を備えた露光装置EXの概略構成を示す。露光装置EXは、スキャニングステッパー(スキャナー)よりなる走査露光型の投影露光装置である。露光装置EXは、投影光学系PL(投影ユニットPU)を備えている。以下、投影光学系PLの光軸AXと平行にZ軸を取り、これに直交する面内でレチクルRとウエハ(半導体ウエハ)Wとが相対走査される方向にY軸を、Z軸及びY軸に直交する方向にX軸を取って説明する。また、X軸、Y軸、及びZ軸に平行な軸の回りの回転方向をθx、θy、及びθz方向とも呼ぶ。本実施形態では、Z軸に直交する平面(XY平面)はほぼ水平面に平行であり、-Z方向がほぼ鉛直線の方向である。
なお、上述の局所液浸装置38を設けたいわゆる液浸型の露光装置の構成にあっては、プレート体28は、さらに図2のウエハステージWSTの平面図に示されるように、その円形の開口28aを囲む、外形(輪郭)が矩形の表面に撥液化処理が施されたプレート部(撥液板)28b、及びプレート部28bを囲む周辺部28eを有する。周辺部28eの上面に、プレート部28bをY方向に挟むようにX方向に細長い1対の2次元の回折格子12A,12Bが固定され、プレート部28bをX方向に挟むようにY方向に細長い1対の2次元の回折格子12C,12Dが固定されている。回折格子12A~12Dは、それぞれX方向、Y方向を周期方向とする周期が1μm程度の2次元の格子パターンが形成された反射型の回折格子である。
そして、露光装置EXの露光時には、基本的な動作として先ずレチクルR及びウエハWのアライメントが行われる。その後、レチクルRへの照明光ILの照射を開始して、投影光学系PLを介してレチクルRのパターンの一部の像をウエハWの表面の一つのショット領域に投影しつつ、レチクルステージRSTとウエハステージWSTとを投影光学系PLの投影倍率βを速度比としてY方向に同期して移動(同期走査)する走査露光動作によって、そのショット領域にレチクルRのパターン像が転写される。その後、ウエハステージWSTを介してウエハWをX方向、Y方向に移動する動作(ステップ移動)と、上記の走査露光動作とを繰り返すことによって、例えば液浸法でかつステップ・アンド・スキャン方式でウエハWの全部のショット領域にレチクルRのパターン像が転写される。
図4(A)は図1のウエハ保持装置8を示す平面図、図4(B)は図4(A)のX方向の中央部における縦断面図(正面から見た断面図)及びウエハホルダ制御系51を示す。図4(B)において、ステージ本体30の上面に3箇所のZ方向に変位可能な例えばボイスコイルモータ方式の駆動部(不図示)を介して、例えば低膨張率の金属製のZステージ53が保持されている。Zステージ53が図1のウエハテーブルWTBに対応している。
また、ウエハホルダ54の底部は円形の平板状であり、この底部の上面にリング状の閉じた側壁部54cが一体的に形成されている。側壁部54cの大きさは、保持対象のウエハWの周縁のエッジ部よりもわずかに小さい程度であり、側壁部54cでウエハWの周縁部が支持される。ウエハWの直径が300mm又は450mmであれば、側壁部54cの外径はそれぞれ300mm又は450mmよりわずかに小さく形成される。ウエハホルダ54は、一例として例えば熱膨張率が非常に小さい材料から形成されている。そのような材料としては、超低膨張ガラス(例えばコーニング社のULE(商品名))、超低膨張率のガラスセラミックス(例えばショット社のゼロデュア (Zerodur) (商品名))、又は炭化ケイ素(SiC)などが使用できる。
さらに、昇降ピン44が配置される円周CTの直径は、複数の昇降ピン44でウエハWを支持したときに、ウエハWの撓み量が最小になるように、すなわちウエハWがいわゆるベッセル点に対応する位置で支持されるように定めてもよい。ウエハWの直径が450mmである場合のベッセル点に対応する位置を示す円周CTの直径は、ほぼ280~310mm程度である。
図5(A)は、図4(B)中の昇降ピン44を示す拡大平面図、図5(B)は図5(A)の昇降ピン44を示す軸部45の一部を省略した縦断面図である。
一例として、先端部46の隔壁部46bの外形は、直径φ3(図5(A)参照)が5~15mmの円形で、隔壁部46bの幅(厚さ)t1(図5(B)参照)は0.05~0.6mmであることが好ましい。さらに、隔壁部46bの外形の直径φ3は、6~9mm程度であることがより好ましい。これらの場合、複数の凸部46cの先端の形状は、直径φ4(図5(B)参照)が0.05~0.6mmの円形であることが好ましい。また、隔壁部46b及び凸部46cの高さh1(図5(B)参照)は、20~500μmであることが好ましい。
また、昇降ピン44のウエハWと接触する複数の凸部の形状は、図5(D)の昇降ピン44Bの凸部46dで示すように、2段(3段以上でもよい)の円錐台状でもよい。この場合の凸部46dの高さは、一例として50~500μmであることが好ましい。また、凸部46cは中実でなくともよく、例えば、筒状(または管状)としてもよい。その場合、凸部の上端は、例えば、開口を囲む環状となり、その環状部分がウエハの裏面と接触する。また、筒(管)の内部を流路として底部の開口と連通させることで、凸部46cの先端においてもウエハを吸着できるようにしてもよい。
その後、ウエハステージWSTを駆動してウエハWを投影光学系PLの下方(露光位置)に移動する過程で、アライメント系ALを用いてウエハWのアライメントが行われ(ステップ118)、このアライメントの結果を用いてウエハWを駆動することで、ウエハWの各ショット領域にレチクルRのパターンの像が走査露光される(ステップ120)。その後、ウエハステージWSTをアンローディング位置UPに移動し、ウエハ保持装置8の吸着機構52によるウエハWの吸着を解除し、昇降ピン44を介してウエハWを上昇させて、ウエハWをアンロード用のウエハ搬送ロボット(不図示)に受け渡すことで、ウエハWがアンロードされる(ステップ122)。アンロードされたウエハWはコータ・デベロッパ(不図示)に搬送されて現像される。そして、次のウエハに露光する場合には(ステップ124)、ステップ104~122の動作が繰り返される。
まず、上記の実施形態では、ウエハ保持装置8の昇降ピン44は例えば3本である。これに対して、図9の変形例のウエハ保持装置8Aで示すように、ウエハホルダ54の側壁部54cで囲まれた領域内の中心に昇降ピン44を配置し、その中心を囲む円周CTに沿って等角度間隔で複数(例えば6個)の昇降ピン44を配置し、これら複数の昇降ピン44でウエハWの受け渡しを行うようにしてもよい。
また、図11(B)の他の変形例の昇降ピン44C2で示すように、先端部46の隔壁部46bで囲まれた領域内に吸着穴45aを囲むように、複数の放射状に配置された壁状の凸部46e4を設けてもよい。図11(B)の例では、壁状の凸部46e4の端部は隔壁部46bに連結されているが、凸部46e4の端部を隔壁部46bから離して配置してもよい。昇降ピン44C2においては、複数の放射状に配置された凸部46e4に対して隔壁部46bはリム状(環状)に形成されている。
なお、昇降ピン44,44A,44B,64,44C3等において、円錐台状又は複数段の円錐台状の凸部46cの代わりに、例えば凸部46cの上面の面積よりも大きい断面積の円柱状又は角柱(例えば6角柱)状の凸部を設けることも可能である。また、凸部46cを円柱状や角柱状の形状ではなく、筒状(例えば、円筒状や角筒状)に形成してもよい。
第2の実施形態につき図12(A)、(B)を参照して説明する。本実施形態の露光装置の基本的な構成は図1の露光装置EXと同様であり、ウエハ保持装置の構成も上記の実施形態とほぼ同様であるが、昇降ピンの構成が異なっている。なお、図12(A)、(B)において、図5(A)、(B)に対応する部分には同一又は類似の符号を付してその詳細な説明を省略する。
さらに、昇降ピン44Eの軸部45に弾性ヒンジ部を設け、先端部46AがウエハWにならって弾性変形できるようにしてもよい。
また、上記の各実施形態の露光装置EX又は露光方法を用いて半導体デバイス等の電子デバイス(又はマイクロデバイス)を製造する場合、電子デバイスは、図13に示すように、電子デバイスの機能・性能設計を行うステップ221、この設計ステップに基づいたレチクル(マスク)を製作するステップ222、デバイスの基材である基板(ウエハ)を製造してレジストを塗布するステップ223、前述した実施形態の露光装置(露光方法)によりレチクルのパターンを基板(感光基板)に露光する工程、露光した基板を現像する工程、現像した基板の加熱(キュア)及びエッチング工程などを含む基板処理ステップ224、デバイス組み立てステップ(ダイシング工程、ボンディング工程、パッケージ工程などの加工プロセスを含む)225、並びに検査ステップ226等を経て製造される。
また、本発明は、半導体デバイス製造用の露光装置への適用に限定されることなく、例えば、角型のガラスプレートに形成される液晶表示素子、若しくはプラズマディスプレイ等のディスプレイ装置用の露光装置や、撮像素子(CCD等)、マイクロマシーン、薄膜磁気ヘッド、及びDNAチップ等の各種デバイスを製造するための露光装置にも広く適用できる。更に、本発明は、各種デバイスのマスクパターンが形成されたマスク(フォトマスク、レチクル等)をフォトリソグフィ工程を用いて製造する際の、露光装置にも適用することができる。
Claims (29)
- 基板を保持する基板保持装置であって、
前記基板が載置される基板保持部と、
前記基板保持部に対して昇降可能に設けられる支持部材と、を備え、
前記支持部材の端部は、
前記基板の裏面を吸着する吸着領域を形成する吸着部と、
前記吸着領域内で前記基板の裏面を支持する支持部と、を有する基板保持装置。 - 前記吸着部は、前記支持部を囲む隔壁部を有する請求項1に記載の基板保持装置。
- 前記支持部は、前記吸着領域内に複数個設けられている請求項1または2に記載の基板保持装置。
- 前記隔壁部は、リム状に形成されている請求項2に記載の基板保持装置。
- 前記吸着部は、前記支持部材の昇降方向に関して前記隔壁部の上端よりも下方に形成された底部を有し、
前記支持部は、前記底部に設けられている請求項2に記載の基板保持装置。 - 前記隔壁部の上端は、前記支持部の上端よりも50nm~数μm低い請求項5に記載の基板保持装置。
- 前記支持部の上端は、円形状に形成されている請求項1~6のいずれか一項に記載の基板保持装置。
- 前記吸着部は、前記支持部を囲む隔壁部と、前記支持部材の昇降方向に関して前記隔壁部の上端よりも下方に形成された底部と、を有し、
前記隔壁部の外形は、直径が5~15mmの円形で、前記隔壁部の幅は0.05~0.6mmであり、
前記支持部の上端の形状は、直径が0.05~0.6mmの円形であり、
前記支持部材は、前記底部に接続する棒状部を有し、前記昇降方向に沿った方向と交差する面に関する前記棒状部の断面積は、前記交差する面に関する前記隔壁部の外形の断面積よりも小さい請求項1に記載の基板保持装置。 - 前記支持部は、前記底部に円錐台状に形成されている請求項5に記載の基板保持装置。
- 前記支持部は、前記底部に同心円状に複数個が配置されている請求項5に記載の基板保持装置。
- 前記支持部は、端面が曲線を含む形状の壁状部材を含む請求項1~3のいずれか一項に記載の基板保持装置。
- 前記曲線は、円弧状である請求項11に記載の基板保持装置。
- 前記支持部は、少なくとも1つの環状の壁状部材を含む請求項1~3のいずれか一項に記載の基板保持装置。
- 前記支持部材は複数個設けられ、
複数の前記支持部材が、所定の直径を有する円の円周に沿って配置されている請求項1~13のいずれか一項に記載の基板保持装置。 - 前記基板は、直径がほぼ450mmの円板状であり、
前記支持部材が複数個設けられ、
複数の前記支持部材が、前記基板保持部において、直径が180~350mmの円周に沿って配置されている請求項1~14のいずれか一項に記載の基板保持装置。 - 前記吸着部は、負圧によって生じる吸引力により前記基板を吸着する請求項1~15のいずれか一項に記載の基板保持装置。
- 前記支持部材は、前記端部に接続される棒状部と、前記昇降方向に関し、前記棒状部に対して前記端部の傾斜を許容するヒンジ部と、をさらに有する請求項1~16のいずれか一項に記載の基板保持装置。
- 前記吸着部は、少なくとも一部に開口が形成され、前記支持部材の昇降方向に関して前記隔壁部の上端よりも下方に形成された底部を有し、
前記支持部材には、負圧に設定可能で、前記開口と連通する流路が形成されている請求項2に記載の基板保持装置。 - 前記支持部は、前記底部に設けられている請求項18に記載の基板保持装置。
- 前記支持部は、前記吸着領域内に複数個設けられ、前記開口の周りに同心円状に配置されている請求項18または19に記載の基板保持装置。
- 前記支持部は、前記底部に設けられ、前記開口を囲む少なくとも1つの環状の壁状部材を有し、
前記底部のうち、前記隔壁部と前記壁状部材とで挟まれた領域には第2の開口が形成され、該第2の開口は前記流路に連通している請求項18~20のいずれか一項に記載の基板保持装置。 - 基板を保持する基板保持装置であって、
前記基板が載置される基板保持部と、
前記基板保持部に対して昇降可能に設けられる支持部材と、を備え、
前記支持部材の端部は、
空隙部を有し、該空隙部の少なくとも一部を負圧にして前記基板の裏面を吸着する多孔質部材と、
前記多孔質部材の少なくとも一部を囲むように形成された隔壁部と、を有する基板保持装置。 - 基板を保持する基板保持装置であって、
前記基板が載置される基板保持部と、
前記基板保持部に対して昇降可能に設けられる支持部材と、を備え、
前記支持部材の端部は、
前記基板の裏面を支持する環状の第1支持部と、
前記第1支持部で囲まれた領域内で、前記基板の裏面を支持する第2支持部と、を有する基板保持装置。 - 露光光でパターンを照明し、前記露光光で前記パターンを介して基板を露光する露光装置において、
露光対象の基板を保持するための、請求項1~23のいずれか一項に記載の基板保持装置と、
前記基板保持装置を搭載して移動するステージと、
を備える露光装置。 - 請求項1~23のいずれか一項に記載の基板保持装置を使用する基板の保持方法であって、
前記基板保持装置の前記支持部材の前記端部を前記基板保持部の上方に移動させることと、
前記支持部材の前記端部に前記基板を受けることと、
前記吸着部が前記基板を吸着することと、
前記支持部材の前記端部を前記基板保持部に対して降下させることと、
前記吸着部による前記基板に対する吸着を解除することと、
前記支持部材の前記端部から前記基板保持部に前記基板を渡すことと、
を含む基板保持方法。 - 前記基板を前記基板保持部に渡すときに、前記基板の前記基板保持部に対する吸着を開始することを特徴とする請求項25に記載の基板保持方法。
- 露光光でパターンを照明し、前記露光光で前記パターンを介して基板を露光する露光方法において、
請求項25または26に記載の基板保持方法を用いて前記基板を保持することと、
前記基板を露光位置に移動することと、
を含む露光方法。 - 請求項24に記載の露光装置を用いて基板上に感光層のパターンを形成することと、
前記パターンが形成された前記基板を処理することと、
を含むデバイス製造方法。 - 請求項27に記載の露光方法を用いて基板上に感光層のパターンを形成することと、
前記パターンが形成された前記基板を処理することと、
を含むデバイス製造方法。
Priority Applications (11)
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US14/892,336 US9865494B2 (en) | 2013-05-23 | 2013-05-23 | Substrate holding method, substrate holding apparatus, exposure apparatus and exposure method |
EP13885187.8A EP3001451A4 (en) | 2013-05-23 | 2013-05-23 | Substrate holding method, substrate holding apparatus, exposure method, and exposure apparatus |
KR1020157035683A KR20160013916A (ko) | 2013-05-23 | 2013-05-23 | 기판 유지 방법 및 장치, 그리고 노광 방법 및 장치 |
JP2015518009A JP6066149B2 (ja) | 2013-05-23 | 2013-05-23 | 基板保持方法及び装置、並びに露光方法及び装置 |
CN201380078446.XA CN105408991B (zh) | 2013-05-23 | 2013-05-23 | 基板保持方法和基板保持装置以及曝光方法和曝光装置 |
PCT/JP2013/064414 WO2014188572A1 (ja) | 2013-05-23 | 2013-05-23 | 基板保持方法及び装置、並びに露光方法及び装置 |
US16/003,207 USRE48429E1 (en) | 2013-05-23 | 2013-05-23 | Substrate holding method, substrate holding apparatus, exposure apparatus and exposure method |
TW107139756A TW201906070A (zh) | 2013-05-23 | 2014-05-23 | 基板保持裝置、曝光裝置、及元件製造方法 |
TW103118054A TWI644178B (zh) | 2013-05-23 | 2014-05-23 | 基板保持方法及裝置、曝光方法及裝置、及元件製造方法 |
HK16108560.5A HK1220546A1 (zh) | 2013-05-23 | 2016-07-19 | 基板保持方法和基板保持裝置以及曝光方法和曝光裝置 |
US15/845,654 US20180174884A1 (en) | 2013-05-23 | 2017-12-18 | Substrate holding method, substrate holding apparatus, exposure apparatus and exposure method |
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US15/845,654 Continuation US20180174884A1 (en) | 2013-05-23 | 2017-12-18 | Substrate holding method, substrate holding apparatus, exposure apparatus and exposure method |
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EP (1) | EP3001451A4 (ja) |
JP (1) | JP6066149B2 (ja) |
KR (1) | KR20160013916A (ja) |
CN (1) | CN105408991B (ja) |
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CN107064195B (zh) * | 2016-02-03 | 2021-04-20 | 赫尔穆特费舍尔股份有限公司电子及测量技术研究所 | 夹持工件的真空夹盘、测量装置和检测晶片等工件的方法 |
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Also Published As
Publication number | Publication date |
---|---|
EP3001451A4 (en) | 2017-01-11 |
CN105408991B (zh) | 2019-07-16 |
TWI644178B (zh) | 2018-12-11 |
US20180174884A1 (en) | 2018-06-21 |
US20160111318A1 (en) | 2016-04-21 |
JP6066149B2 (ja) | 2017-01-25 |
TW201506552A (zh) | 2015-02-16 |
JPWO2014188572A1 (ja) | 2017-02-23 |
HK1220546A1 (zh) | 2017-05-05 |
USRE48429E1 (en) | 2021-02-09 |
EP3001451A1 (en) | 2016-03-30 |
CN105408991A (zh) | 2016-03-16 |
KR20160013916A (ko) | 2016-02-05 |
TW201906070A (zh) | 2019-02-01 |
US9865494B2 (en) | 2018-01-09 |
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