JP7022589B2 - 基板処理装置、基板処理方法及びコンピュータ記憶媒体 - Google Patents
基板処理装置、基板処理方法及びコンピュータ記憶媒体 Download PDFInfo
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- JP7022589B2 JP7022589B2 JP2018000416A JP2018000416A JP7022589B2 JP 7022589 B2 JP7022589 B2 JP 7022589B2 JP 2018000416 A JP2018000416 A JP 2018000416A JP 2018000416 A JP2018000416 A JP 2018000416A JP 7022589 B2 JP7022589 B2 JP 7022589B2
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
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Description
または、上記課題を解決する本発明は、基板の表面に塗布液を塗布し、基板の表面上の露光された塗布膜を現像する基板処理装置であって、露光処理前において、前記基板の裏面と、露光処理時に前記基板の裏面を保持する保持面との摩擦を低減する摩擦低減膜を、当該基板の裏面に形成する膜形成部を備え、前記膜形成部は、前記基板の裏面に摩擦低減膜用材料を塗布することを特徴としている。
または、上記課題を解決する本発明は、基板の表面に塗布液を塗布し、基板の表面上の露光された塗布膜を現像する基板処理装置であって、露光処理前において、前記基板の裏面と、露光処理時に前記基板の裏面を保持する保持面との摩擦を低減する摩擦低減膜を、当該基板の裏面に形成する膜形成部を備え、前記摩擦低減膜が裏面に形成された後に露光処理が行われた前記基板に対し、前記摩擦低減膜を剥離する膜剥離部をさらに備えることを特徴としている。
または、別な観点による本発明は、基板の表面に塗布液を塗布し、基板の表面上の露光された塗布膜を現像する基板処理方法であって、露光処理前において、前記基板の裏面と、露光処理時に前記基板の裏面を保持する保持面との摩擦を低減する摩擦低減膜を、当該基板の裏面に形成する膜形成工程を含み、前記膜形成工程で前記摩擦低減膜が裏面に形成された後に露光処理が行われた前記基板に対し、前記摩擦低減膜を剥離する膜剥離工程をさらに含むことを特徴としている。
先ず、本発明の第1の実施形態に係る基板処理システム(本発明における基板処理装置)の構成について説明する。図1は、本実施形態に係る基板処理システム1の構成の概略を模式的に示す平面図である。
基板処理システム1は、基板としてのウェハWに所定の処理を行う2つの処理システム10、20を有している。また、基板処理システム1には、制御部30が設けられている。制御部30は、例えばコンピュータであり、プログラム格納部(図示せず)を有している。プログラム格納部には、基板処理システム1におけるウェハWの処理を制御するプログラムが格納されている。前記プログラムは、例えばコンピュータ読み取り可能なハードディスク(HD)、フレキシブルディスク(FD)、コンパクトディスク(CD)、マグネットオプティカルデスク(MO)、メモリーカードなどのコンピュータに読み取り可能な記憶媒体に記録されていたものであって、その記憶媒体から制御部30にインストールされたものであってもよい。本実施形態における基板処理システム1の構成は、本発明のウェハ処理方法を実行するための一例であって、これに限定されるものではない。
第1の処理システム10の構成について説明する。図2は、第1の処理システム10の構成の概略を模式的に示す平面図である。図3及び図4は、第1の処理システム10の内部構成の概略を模式的に示す、各々正面図と背面図である。
第2の処理システム20の構成について説明する。図5は、第2の処理システム20の構成の概略を模式的に示す平面図である。図6及び図7は、第2の処理システム20の内部構成の概略を模式的に示す、各々正面図と背面図である。
次に、摩擦低減膜形成装置133について説明する。摩擦低減膜形成装置133では、ウェハWの裏面に摩擦低減用材料のガス(以下、「原料ガス」という。)を蒸着させて、当該裏面に摩擦低減膜を形成する。露光装置202では、上述したように昇降ピンによってウェハWの外周部が中心部に比べて下方にたわんでいる場合や、またウェハW自体が平坦でない場合には、ウェハWは、ストレスがかかった状態でステージに吸着保持され、ステージ上で変形してしまう。そこで、本実施形態では、露光処理前に摩擦低減膜形成装置133において、ウェハWの裏面に、露光装置202のステージの保持面に対して高い接触角を有し、ウェハWの裏面とステージの保持面との摩擦(摩擦係数)を低減する摩擦低減膜を形成する。そうすると、露光装置202では、摩擦低減膜によってウェハWはステージ上を滑るように載置され、上述したストレスを低減することができる。なお、摩擦低減膜の膜種は、摩擦を低減するものであれば特に限定されるものではないが、例えばフッ素樹脂膜が用いられる。
次に、紫外線処理装置134、135について説明する。紫外線処理装置134は本発明における前処理部に相当し、摩擦低減膜形成装置133においてウェハWの裏面に摩擦低減膜を形成する前に、当該裏面に紫外線を照射する。この紫外線照射によってウェハWの裏面が活性化し、摩擦低減膜を適切に形成することができ、露光装置202のステージに対する接触角を大きくすることができる。また、紫外線処理装置135は本発明における膜剥離部に相当し、露光処理後のウェハWの裏面に紫外線を照射し、当該裏面に形成された摩擦低減膜を剥離する。
次に、以上のように構成された基板処理システム1で行われるウェハ処理について説明する。図13は、かかるウェハ処理の主な工程の例を示すフローチャートである。
次に、本発明の第2の実施形態に係る基板処理システム(本発明における基板処理装置)の構成について説明する。図14及び図15は、基板処理システム500の内部構成の概略を模式的に示す、各々正面図と背面図である。
以上の実施形態の摩擦低減膜形成装置133では、ウェハWに原料ガスを蒸着させていたが、ウェハWの裏面に摩擦低減用材料を塗布してもよい。かかる場合、例えばウェハWの端部を保持した状態で、摩擦低減用材料を充填したスポンジをウェハWの裏面に押し当て、当該摩擦低減用材料を直塗りしてもよい。また、例えばスピンコーティング法を用いて、ウェハWを回転させながら、当該ウェハWの裏面中心部に摩擦低減用材料を供給し、塗布してもよい。但し、いずれの場合でも、摩擦低減用材料を塗布後に、ウェハWを加熱処理するのが好ましい。
10 第1の処理システム
20 第2の処理システム
30 制御部
120、121 裏面洗浄装置
122 下層膜形成装置
123 触媒処理装置
130~132 熱処理装置
133 摩擦低減膜形成装置
134、135 紫外線処理装置
220 現像処理装置
221 中間層膜形成装置
222 レジスト塗布装置
223 表面洗浄装置
224 裏面洗浄装置
231 疎水化処理装置
232 周辺露光装置
300 チャンバ
310 ヒータ
320、321 支持部
322 昇降機構
330 ガス供給部
340 排気路
400 スピンチャック
401 パッド
402、403 移動機構
410、411 UVランプ
500 基板処理システム
W ウェハ
Claims (20)
- 基板の表面に塗布液を塗布し、基板の表面上の露光された塗布膜を現像する基板処理装置であって、
露光処理前において、前記基板の裏面と、露光処理時に前記基板の裏面を保持する保持面との摩擦を低減する摩擦低減膜を、当該基板の裏面に形成する膜形成部を備え、
前記膜形成部は、前記基板の裏面に摩擦低減膜用材料を蒸着させることを特徴とする、基板処理装置。 - 基板の表面に塗布液を塗布し、基板の表面上の露光された塗布膜を現像する基板処理装置であって、
露光処理前において、前記基板の裏面と、露光処理時に前記基板の裏面を保持する保持面との摩擦を低減する摩擦低減膜を、当該基板の裏面に形成する膜形成部を備え、
前記膜形成部は、前記基板の裏面に摩擦低減膜用材料を塗布することを特徴とする、基板処理装置。 - 前記膜形成部は、前記基板の表面への塗布液の塗布処理が完了した後であって、露光処理前において、前記摩擦低減膜を前記基板の裏面に形成することを特徴とする、請求項1又は2に記載の基板処理装置。
- 前記膜形成部は、前記基板の裏面の一部を支持する支持部を備えることを特徴とする、請求項1~3のいずれか一項に記載の基板処理装置。
- 前記支持部は複数設けられ、当該複数の支持部は各々前記基板の裏面の異なる部分を支持し、
前記膜形成部は、前記複数の支持部を個別に移動させる移動機構をさらに備えることを特徴とする、請求項4に記載の基板処理装置。 - 基板の表面に塗布液を塗布し、基板の表面上の露光された塗布膜を現像する基板処理装置であって、
露光処理前において、前記基板の裏面と、露光処理時に前記基板の裏面を保持する保持面との摩擦を低減する摩擦低減膜を、当該基板の裏面に形成する膜形成部を備え、
前記摩擦低減膜が裏面に形成された後に露光処理が行われた前記基板に対し、前記摩擦低減膜を剥離する膜剥離部をさらに備えることを特徴とする、基板処理装置。 - 前記膜剥離部は、前記基板に露光後ベーク処理を行った後であって、前記基板に現像処理を行う前に、前記摩擦低減膜を剥離することを特徴とする、請求項6に記載の基板処理装置。
- 前記膜剥離部は、前記基板の裏面に紫外線を照射して、前記摩擦低減膜を剥離することを特徴とする、請求項6又は7に記載の基板処理装置。
- 裏面洗浄装置をさらに備え、
前記膜剥離部は、前記露光処理および露光後ベーク処理が行われた後の前記基板に対し、前記摩擦低減膜を剥離し、
前記裏面洗浄装置は、前記剥離された後の前記基板の裏面を洗浄することを特徴とする、請求項6に記載の基板処理装置。 - 前記膜形成部において前記基板の裏面に前記摩擦低減膜を形成する前に、前記基板の裏面に紫外線を照射する前処理部をさらに備えることを特徴とする、請求項1~9のいずれか一項に記載の基板処理装置。
- 基板の表面に塗布液を塗布し、基板の表面上の露光された塗布膜を現像する基板処理方法であって、
露光処理前において、前記基板の裏面と、露光処理時に前記基板の裏面を保持する保持面との摩擦を低減する摩擦低減膜を、当該基板の裏面に形成する膜形成工程を含み、
前記膜形成工程において、前記基板の裏面に摩擦低減膜用材料を蒸着させること、又は、前記膜形成工程において、前記基板の裏面に摩擦低減膜用材料を塗布すること、を特徴とする、基板処理方法。 - 前記膜形成工程は、前記基板の表面への塗布液の塗布処理が完了した後であって、露光処理前に行われることを特徴とする、請求項11に記載の基板処理方法。
- 前記膜形成工程において、前記基板の裏面の一部を支持して、当該基板の裏面に前記摩擦低減膜を形成することを特徴とする、請求項11又は12のいずれか一項に記載の基板処理方法。
- 前記膜形成工程において、前記基板の裏面を支持する部分を変更して、当該基板の裏面に前記摩擦低減膜を形成することを特徴とする、請求項13に記載の基板処理方法。
- 基板の表面に塗布液を塗布し、基板の表面上の露光された塗布膜を現像する基板処理方法であって、
露光処理前において、前記基板の裏面と、露光処理時に前記基板の裏面を保持する保持面との摩擦を低減する摩擦低減膜を、当該基板の裏面に形成する膜形成工程を含み、
前記膜形成工程で前記摩擦低減膜が裏面に形成された後に露光処理が行われた前記基板に対し、前記摩擦低減膜を剥離する膜剥離工程をさらに含むことを特徴とする、基板処理方法。 - 前記膜剥離工程は、前記基板に露光後ベーク処理を行った後であって、前記基板に現像処理を行う前に行われることを特徴とする、請求項15に記載の基板処理方法。
- 前記膜剥離工程において、前記基板の裏面に紫外線を照射して、前記摩擦低減膜を剥離することを特徴とする、請求項15又は16に記載の基板処理方法。
- 前記膜剥離工程は、前記露光処理および露光後ベーク処理の後に行われ、
前記膜剥離工程の後に、前記基板の裏面を洗浄する裏面洗浄工程をさらに含むことを特徴とする、請求項15に記載の基板処理方法。 - 前記膜形成工程の前に、前記基板の裏面に紫外線を照射する前処理工程をさらに含むことを特徴とする、請求項11~18のいずれか一項に記載の基板処理方法。
- 請求項11~19のいずれか一項に記載の基板処理方法を基板処理装置によって実行させるように、当該基板処理装置を制御する制御部のコンピュータ上で動作するプログラムを格納した読み取り可能なコンピュータ記憶媒体。
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