Classifications

• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
  • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
  • C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
  • C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
  • C08F20/10—Esters
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
  • C08G63/00—Macromolecular compounds obtained by reactions forming a carboxylic ester link in the main chain of the macromolecule
  • C08G63/02—Polyesters derived from hydroxycarboxylic acids or from polycarboxylic acids and polyhydroxy compounds
  • C08G63/12—Polyesters derived from hydroxycarboxylic acids or from polycarboxylic acids and polyhydroxy compounds derived from polycarboxylic acids and polyhydroxy compounds
  • C08G63/123—Polyesters derived from hydroxycarboxylic acids or from polycarboxylic acids and polyhydroxy compounds derived from polycarboxylic acids and polyhydroxy compounds the acids or hydroxy compounds containing carbocyclic rings
  • C08G63/133—Hydroxy compounds containing aromatic rings
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
  • C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
  • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/20—Exposure; Apparatus therefor
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/26—Processing photosensitive materials; Apparatus therefor
  • G03F7/30—Imagewise removal using liquid means
  • G03F7/32—Liquid compositions therefor, e.g. developers
  • G03F7/322—Aqueous alkaline compositions

Definitions

• the present invention relates to a composition for forming an upper layer film used in a photolithography method. More specifically, the present invention relates to a composition for forming an upper layer film formed on a resist film prior to exposing the extreme ultraviolet resist film when a resist pattern is formed by a photolithography method. It is. The present invention also relates to a pattern forming method using such a composition for forming an upper layer film.
• the extreme ultraviolet rays emitted from the exposure light source generally include longer wavelength light such as deep ultraviolet rays. For this reason, when forming a pattern by the photolithographic method using extreme ultraviolet rays, such a light source with a low content of deep ultraviolet rays is desirable.
• In order to remove deep ultraviolet rays from the light emitted from the exposure apparatus it is necessary to adjust the method for generating extreme ultraviolet rays, for example, to adjust the optical system.
• the conventional exposure light source it is difficult for the conventional exposure light source to completely remove deep ultraviolet rays, and the conventional exposure apparatus cannot suppress the content of deep ultraviolet rays contained in extreme ultraviolet rays to 3% or less.
• deep ultraviolet rays included in extreme ultraviolet rays are factors that cause deterioration of the roughness of the resist pattern and deterioration of the pattern shape, and an improvement means for such a problem has been desired.
• each component of the composition such as a photosensitive material and a photoacid generator contained in the resist film, a low molecular weight compound formed by a photoreaction, etc. Often volatilizes as a gas.
• a gas is called outgas and contaminates an optical system such as a mirror in the exposure apparatus, a photomask, etc., and as a result, the exposure accuracy may deteriorate. Therefore, it has also been desired to suppress the gas that volatilizes from the resist.
• Patent Documents 1 and 2 a method has been developed in which an upper layer film that suppresses the release of gas from the resist film and transmits extreme ultraviolet rays but absorbs deep ultraviolet light is formed above the resist film.
• Patent Documents 1 and 2 a polymer that absorbs deep ultraviolet rays that can be used for such an upper layer film has been studied. That is, a polymer having a benzene, naphthalene or anthracene skeleton has been used to enhance the deep ultraviolet absorption effect of the upper layer film. And in order to make absorption of deep ultraviolet light higher, search for a polymer type and a combination of polymers have been studied.
• composition for forming an upper layer film according to the present invention is characterized by comprising a triphenylene derivative having a hydrophilic group and a solvent.
• the pattern forming method according to the present invention comprises applying a resist composition on a substrate to form a resist film, applying the upper layer film-forming composition on the resist film, curing it by heating, It is characterized by comprising exposing with ultraviolet rays and developing with an alkaline aqueous solution.
• the influence of deep ultraviolet rays is reduced, the roughness of the resist pattern is not deteriorated, the pattern shape is not deteriorated, and the resist is exposed at the time of exposure.
• an upper layer film that can suppress the volatilization of gas from can be formed.
• This upper layer film has a high absorption rate of deep ultraviolet rays and can achieve a deep ultraviolet absorption rate of 85% or more.
• a fine pattern can be manufactured with high accuracy without contaminating the inside of the exposure apparatus with the gas generated from the resist.
• the composition for forming an upper layer film according to the present invention is used, a residue hardly adheres to the resist pattern surface after development, and an excellent pattern can be obtained also in this respect.
• the composition for forming an upper layer film according to the present invention is for forming an upper layer film formed on the upper side of the resist film.
• This composition comprises a triphenylene derivative and can form an upper layer film that absorbs light having a wavelength of 170 to 300 nm, mainly 193 nm and 248 nm (hereinafter sometimes referred to as deep ultraviolet light).
• Triphenylene is a compound having a structure in which four aromatic rings are condensed, and has very strong absorption with respect to deep ultraviolet light, particularly light with a wavelength of 248 nm. Such light absorption with respect to deep ultraviolet light is derived from the triphenylene skeleton, and various derivatives of triphenylene also show similar light absorption.
• a triphenylene compound having no substituent and consisting only of carbon and hydrogen has very low solubility in an alkaline solution. For this reason, when used for the composition for forming an upper layer film, it is difficult to dissolve and remove from the resist surface by a development process. In addition, since the polarity is low and there is little affinity for the film surface or interaction between molecules, it is difficult to form a film covering the resist surface. Therefore, there are many problems to be solved in order to apply triphenylene as it is to the composition for forming an upper layer film. In the present invention, this problem is solved by using a triphenylene derivative.
• Such a substituent is preferably a hydrophilic group.
• a hydroxyl group, a carboxyl group, a sulfo group, an amino group, an amide group, a nitro group, a cyano group, and a polyalkylene oxide group are preferable.
• the hydroxyl group includes a phenolic hydroxyl group.
• the number is preferably 4 or more. Furthermore, it is most preferable that the number is 6 per triphenylene skeleton from the viewpoint of film forming properties as an upper layer film.
• Various such triphenylene derivatives are known and are commercially available.
• hydrophilic groups do not need to be directly bonded to the triphenylene skeleton. It may be bonded to the triphenylene skeleton via a linking group such as a hydrocarbon group.
• the linking group may be a hydrophilic polymer main chain, and a triphenylene skeleton may be bonded to the side chain.
• R is hydrogen or a hydrophilic group, and at least three of all R are hydrophilic groups
• the hydrophilic group can be selected from the group consisting of a hydroxyl group, a carboxyl group, a sulfo group, an amino group, an amide group, a nitro group, a cyano group, and a polyalkylene oxide group.
• R may be a hydrophobic group such as a hydrocarbon group, the effects of the present invention may be obtained, but if a hydrophobic group is included, the solubility in an aqueous alkali solution is reduced. It is preferable not to contain a hydrophobic group.
• the position of the hydrophilic group is not particularly limited, but it is preferable to have a hydrophilic group at any of the positions 2, 3, 6, 7, 10, or 11. Particularly when 6 of R are hydrophilic groups, those having hydrophilic groups at the 2, 3, 6, 7, 10, and 11 positions are particularly preferred. Specific examples include the following compounds.
• triphenylene derivatives used in the present invention include polymers containing a triphenylene skeleton in a repeating unit. That is, it contains a triphenylene skeleton in the main chain or side chain of the polymer.
• the polymer which is a triphenylene derivative contains a hydrophilic group, but the hydrophilic group may be present in either the main chain or the side chain of the polymer, and directly in the triphenylene skeleton included in the polymer. Even if it couple
• L is a divalent linking group and can be arbitrarily selected. For example, single bond, alkylene group, alkylene oxide group, alkenylene group, alkynylene group, ethylene bond, acetylene bond, ether bond, ester bond, sulfonate bond, imide bond, amide bond, azo bond, or sulfide bond It is done.
• a branched polymer or dendrimer in which the repeating unit of (2B) is further bonded to any one of R ′ is also included.
• the dendrimer which has the following structures is mentioned.
• the molecular weight of the polymer containing a triphenylene skeleton is not particularly limited, but the weight average molecular weight is preferably 1,000 to 20,000 in order to keep the coating property of the composition for forming an upper film suitably. 2,000 to 5,000 is more preferable.
• the blending amount of the triphenylene derivative in the composition for forming the upper layer film is adjusted according to the optical characteristics and gas barrier characteristics required for the formed upper layer film, but is 0 based on the total weight of the composition for forming the upper layer film. It is preferably 0.01 to 10% by weight, more preferably 0.5 to 5% by weight.
• the triphenylene derivative functions as a film forming component itself rather than a material combined with a polymer that is a film forming component of the upper layer film. That is, all of the solid content contained in the composition for forming an upper layer film may be a triphenylene derivative.
• the composition for forming an upper layer film according to the present invention comprises a solvent.
• a solvent capable of dissolving the above-mentioned triphenylene derivative and a polymer or additive used as necessary is used.
• a solvent a solvent capable of dissolving the above-mentioned triphenylene derivative and a polymer or additive used as necessary is used.
• A monoalcohol such as methyl alcohol, ethyl alcohol, isopropyl alcohol, methyl isobutyl carbinol, etc.
• B Polyols such as ethylene glycol and glycerol
• c Alkyl ethers of polyols such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monomethyl ether, etc.
• Alkyl ether acetates of polyols such as ethylene glycol monomethyl Ether acetate, ethylene glycol monoethyl ether acetate, etc.
• E ethers such as diethyl ether, dibutyl ether, etc.
• F cyclic ethers such as tetrahydrofuran,
• G a hydrocarbon having 12 or less carbon atoms, such as n-hexane, n-octane, cyclohexane, etc.
• aromatic hydrocarbons such as benzene, toluene, etc.
• ketones such as acetone, methyl ethyl ketone, etc.
• esters such as methyl acetate, ethyl acetate, ethyl lactate and the like, and (k) water.
• Some organic solvents have high solubility in resist patterns. When it is necessary to use such a solvent, it is preferably used as a mixed solvent in which a solvent having low solubility in a resist pattern such as water is combined.
• the composition for forming an upper layer film may be composed only of a triphenylene derivative and a solvent, or may further contain a polymer as a film forming component.
• a polymer may be referred to as a binder polymer or simply a binder. That is, the binder refers to a polymer that does not contain a triphenylene skeleton.
• the triphenylene derivative since the triphenylene derivative has a hydrophilic group, a film can be formed even when the triphenylene derivative itself is not a polymer or does not contain a binder as a film forming component. There is a feature.
• the upper layer film is formed using a composition not containing a binder, it is preferable because the upper layer film can be easily removed in the developer. If the triphenylene derivative itself is not a polymer, or the upper layer film is formed without a binder generally used as a film-forming component, the substituent introduced into the triphenylene derivative is chemisorbed on the resist surface. It is speculated that this is because the triphenylene derivatives are bonded to each other by interaction.
• the film formability is improved, and a more uniform upper layer film can be formed.
• the upper layer film is formed using the binder in this manner, a relatively strong upper layer film is formed, and therefore, it is preferable because peeling of the upper layer film due to physical contact or the like is suppressed.
• the compatibility with the triphenylene derivative is high, but there is no particular limitation and any one can be selected.
• a natural polymer compound can be used as the binder, but from the viewpoint of production stability, a copolymer or homopolymer that is a synthetic polymer compound having a repeating unit is used.
• the polymerization mode of the binder polymer is not particularly limited. That is, the manner in which the monomer is polymerized is not particularly limited, and the monomer may be polymerized in any manner such as condensation polymerization, ring-opening polymerization, or addition polymerization.
• binders are known and can be arbitrarily selected within a range not impairing the effects of the present invention.
• Specific examples include phenolic resins such as novolac resins, polyhydroxystyrene, polyvinyl alcohol, polyacrylic acid, polymethacrylic acid, polyacrylic acid ester, polymethacrylic acid ester, polyvinyl acetate, and polyvinylpyrrolidone.
• acrylic acid ester or methacrylic acid ester includes acrylic acid hydroxyethyl ester, acrylic acid polyethylene oxide adduct, methacrylic acid hydroxyethyl ester, methacrylic acid polyethylene oxide adduct and the like.
• the binder preferably has a hydrophilic group that acts to be soluble in water.
• hydrophilic groups are generally well known and include hydroxyl groups, carboxyl groups, sulfo groups, substituted and unsubstituted amino groups, substituted and unsubstituted ammonium groups, carboxylate ester groups, sulfonate ester groups, Examples thereof include substituted and unsubstituted amide groups, alkylene oxide groups, and oxime groups. Of these, a hydroxyl group and a carboxyl group are particularly preferred. When these groups have a substituent, an aliphatic group such as an alkyl group or an aromatic group such as a phenyl group can be used as the substituent.
• the upper layer film according to the present invention is preferably used for pattern formation in which development is performed with an alkaline aqueous solution, but is not limited thereto.
• a triphenylene derivative having a small hydrophilic group it can be used for pattern formation in which development is performed with an organic solvent.
• the content is adjusted according to the target film thickness and the like, but is generally 0.1 to 10% by weight based on the total weight of the composition for forming the upper layer film. 0.5 to 5% by weight is preferable. If the content of the binder is excessively high, the thickness of the upper layer film to be formed becomes large and the absorption of extreme ultraviolet light may increase, so care must be taken.
• a polymer having a deep ultraviolet absorbing group can also be used in order to supplement the deep ultraviolet absorbing effect of the triphenylene derivative.
• the deep ultraviolet absorbing group refers to a group that absorbs light of 170 to 300 nm.
• Such groups include aromatic groups, particularly phenyl groups, naphthyl groups, and atonracenyl groups. These groups optionally have a substituent.
• One of the substituents is a hydrocarbon group such as an alkyl group.
• the composition for forming an upper layer film according to the present invention may further contain other additives.
• these components are used for the purpose of improving the coating property of the composition on the resist and improving the physical properties of the formed upper layer film.
• One such additive is a surfactant.
• Anionic surfactants such as alkyl diphenyl ether disulfonic acid, alkyl diphenyl ether sulfonic acid, alkyl benzene sulfonic acid, polyoxyethylene alkyl ether sulfuric acid, and alkyl sulfuric acid, and their ammonium or organic amine salts
• B a cationic surfactant, such as hexadecyltrimethylammonium hydroxide
• Nonionic surfactants such as polyoxyethylene alkyl ethers (more specifically, polyoxyethyl lauryl ether, polyoxyethylene oleyl ether, polyoxyethylene cetyl ether, etc.), polyoxyethylene fatty acid
• (D) amphoteric surfactants such as 2-alkyl-N-carboxymethyl-N-hydroxyethylimidazolinium betaine, amidopropyl hydroxysulfone betaine laurate, However, it is not limited to these. Of these, nonionic surfactants are preferred. On the other hand, a surfactant having an amine group or a carboxyl group must be used with care because these groups may react with a hydrophilic group bonded to a triphenylene derivative. As other additives, thickeners, colorants such as dyes, acids and bases, and the like can be used as additives. The addition amount of these additives is determined in consideration of the effect of each additive, etc., but is generally 0.01 to 1% by weight, preferably 0.1 to 0%, based on the total weight of the composition. .5% by weight.
• composition for forming an upper layer film according to the present invention can be used in the same manner as the conventional composition for forming an upper layer film and the composition for forming an upper surface antireflection film. In other words, when using the composition for forming an upper layer film according to the present invention, it is not necessary to drastically change the production process.
• the pattern forming method using the composition for forming an upper layer film according to the present invention will be specifically described as follows.
• a resist composition is applied to a surface of a substrate such as a silicon substrate or a glass substrate, which has been pretreated as necessary, by a conventionally known coating method such as a spin coating method to form a resist composition layer.
• a conventionally known coating method such as a spin coating method
• a lower layer film may be applied and formed in the resist lower layer.
• Such a lower layer film can generally improve the adhesion between the resist layer and the substrate.
• reflected light can be increased and an exposure margin can be improved.
• any resist composition having sensitivity to extreme ultraviolet rays can be used.
• a resist composition for deep ultraviolet rays for example, a photoresist composition for ArF laser or a photoresist composition for KrF laser is generally used.
• the resist composition that can be used in the pattern forming method of the present invention is not limited as long as it has sensitivity to extreme ultraviolet rays, and can be arbitrarily selected.
• preferred resist compositions include, in particular, positive and negative chemically amplified resist compositions.
• the chemically amplified resist composition can be used for the pattern forming method of the present invention regardless of whether it is a positive type or a negative type.
• a chemically amplified resist generates an acid upon irradiation and forms a pattern by changing the solubility of the irradiated portion in the developer by a chemical change caused by the catalytic action of this acid. Containing an acid-generating compound to be generated and an acid-sensitive group-containing resin that decomposes in the presence of an acid to produce an alkali-soluble group such as a phenolic hydroxyl group or a carboxyl group, an alkali-soluble resin, a crosslinking agent, and an acid generator What consists of an agent is mentioned.
• the upper film formation composition according to the present invention is applied onto the resist film applied on the substrate by spin coating or the like, and the solvent is evaporated by heating to form an upper surface film.
• the heating is performed using, for example, a hot plate.
• the heating temperature is selected according to the type of solvent contained in the composition. In particular. Generally, it is 25 to 150 ° C., preferably 80 to 130 ° C., more preferably 90 to 110 ° C.
• the thickness of the upper layer film to be formed is generally 1 to 100 nm, preferably 5 to 50 nm.
• a resist film after apply
• the upper layer film thus formed has a high transmittance of extreme ultraviolet rays.
• the transmission of extreme ultraviolet rays is hardly affected by polymer substituents and the like, and the influence of elemental species is relatively large.
• carbon and hydrogen, which are the main constituent elements of the upper layer film have little absorption of extreme ultraviolet rays, the upper layer film generally exhibits a sufficient transmittance to achieve the effects of the present invention.
• the transmittance for light having a wavelength of 13.5 nm is preferably 80% or more, and more preferably 85% or more.
• the upper layer film thus formed has a low deep ultraviolet transmittance.
• the transmittance for light having a wavelength of 248 nm is more preferably 20% or less, and more preferably 15% or less.
• the resist film is then exposed using extreme ultraviolet light, for example, light having a wavelength of 5 to 20 nm, particularly light having a wavelength of 13.5 nm, through a mask as necessary.
• extreme ultraviolet light for example, light having a wavelength of 5 to 20 nm, particularly light having a wavelength of 13.5 nm, through a mask as necessary.
• the upper layer film can be removed and the resist can be developed at the same time by developing with an alkaline developer without any special treatment.
• the resist can be separately developed with an alkaline developer.
• the alkaline developer used for development for example, an aqueous solution or aqueous solution of sodium hydroxide, tetramethylammonium hydroxide (TMAH), or the like is used.
• TMAH tetramethylammonium hydroxide
• the resist pattern is rinsed (washed) using a rinse liquid, preferably pure water, as necessary.
• the formed resist pattern is used as a resist for etching, plating, ion diffusion, dyeing treatment, etc., and then peeled off as necessary.
• the film thickness of the resist pattern is appropriately selected depending on the application to be used, but generally a film thickness of 0.1 to 150 nm, preferably 20 to 80 nm is selected.
• the resist pattern obtained by the pattern forming method according to the present invention is subsequently processed according to the application.
• processing can be performed by a conventional method.
• a certain deep ultraviolet absorption effect may be achieved by adding a triphenylene derivative to the resist composition.
• the triphenylene derivative is left in the formed resist layer.
• the triphenylene derivative is present on the side surface and surface of the resist pattern during pattern formation.
• a triphenylene derivative is a hard substance as is generally known, and is harder than a cured resist film.
• the triphenylene derivative may remain on the side surface or surface of the resist pattern in a protruding state, or the protruding triphenylene derivative may fall off, resulting in crater defects on the surface. Such unevenness of the resist pattern surface is not preferable.
• the triphenylene derivative does not exist in the resist layer and is removed by development processing, so there is no problem.
• Examples 101-121 As the triphenylene derivative, the above-mentioned compounds (1-1), (1-2), (1-3), and (2B-1) were prepared.
• the compound (1-1) a commercially available product was used.
• Compounds (1-2) and (1-3) were synthesized by reacting a carboxylic anhydride compound with compound (1-1) as a raw material. Specifically, the compound (1-1) is dissolved in dimethylformamide, triethylamine is added and stirred for 10 minutes, and then 3 equivalents of isobutyric anhydride or benzoic anhydride are added and heated to 110 ° C. to 2 The reaction was stirred for an hour.
• P1 Polyhydroxystyrene (weight average molecular weight 12,000)
• P2 Novolac resin (weight average molecular weight 8,500)
• P3 Polyvinyl alcohol (weight average molecular weight 22,000)
• P4 Polyacrylic acid (weight average molecular weight 11,000)
• the resist composition was applied by spin coating so as to have a film thickness of 50 nm.
• As the resist composition AZ DX7260P and AZ AX2110 (trade name, manufactured by AZ Electronic Materials Co., Ltd.) were used.
• each upper layer film-forming composition was further spin-coated so as to have a film thickness of 30 nm.
• the resist film coated with the upper layer film was obtained by heating at 120 ° C. for 60 seconds. At this time, applicability was evaluated using visual observation and a film thickness meter.
• the evaluation criteria were as follows. A: Application was possible and the in-plane uniformity of the film thickness was excellent. B: Application was possible and the in-plane uniformity of the film was slightly inferior, but the practicality was sufficient. C: Application was possible. Although it was confirmed that the surface shape was inferior by visual observation, it was practically usable D: Application was not possible
• Comparative Examples 201-203 and Examples 201-210 A resist film was obtained in the same manner as in Example 101 except that the composition for forming the upper layer film was changed to the one shown in Table 2. While exposing each resist film with extreme ultraviolet rays, the pressure change ⁇ P of the exposure chamber was measured before and after the exposure. Each resist film was exposed at an illuminance of 0.35 mW / cm 2 using BL03 of Spring-8. Further, the exposed resist film was developed with a 2.38% tetramethylammonium hydroxide aqueous solution for 30 seconds, and the exposure amount E th (film loss sensitivity) necessary for obtaining a pattern was measured. Moreover, the same measurement was performed by changing the kind of triphenylene derivative contained in the composition for forming an upper layer film. The obtained results were as shown in Table 2.
• Comparative Examples 301-303 and Examples 301-310 The upper layer film-forming composition was formed into a film with a thickness of 30 nm by spin coating, and the light transmittance was evaluated. Specifically, an absorption coefficient was obtained by a spectroscopic ellipsometer analysis method, and k values at wavelengths of 193 nm and 248 nm were calculated. The obtained results were as shown in Table 3. That is, in Comparative Examples 301 to 303 containing no triphenylene derivative, the k value at 248 nm is very small and the absorption of deep ultraviolet light is small, whereas in Examples 301 to 310, the absorption of deep ultraviolet light is large. I understood it.
• P5 Composition for forming an upper layer film comprising a polymer (molar ratio 40:60) comprising a methacrylic acid monomer unit containing an anthracene skeleton and an acrylic acid monomer unit
• Comparative Example 401 and Examples 401 to 411 On the substrate, the resist composition was applied by spin coating so as to have a film thickness of 40 nm. SEVR-337 (trade name, manufactured by Shin-Etsu Chemical Co., Ltd.) was used as the resist composition. After applying the resist composition, each upper layer film-forming composition was further spin-coated so as to have a film thickness of 30 nm. After coating, the resist film coated with the upper layer film was obtained by heating at 95 ° C. for 60 seconds.
• the resulting resist film was exposed to an image using a Spring-8 Newval storage ring, developed with a 2.38% tetramethylammonium hydroxide aqueous solution for 30 seconds, and the exposure amount and the resulting pattern dimension CD were measured. did. Furthermore, the variation value ⁇ CD of the pattern dimension in each example was calculated based on the pattern dimension of the comparative example 501 having no upper layer film. The obtained results were as shown in Table 4.

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  • 2014-03-14 TW TW103109460A patent/TWI610979B/zh active

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