KR102001819B1 - 상층막 형성용 조성물 및 이를 사용한 레지스트 패턴 형성 방법 - Google Patents

상층막 형성용 조성물 및 이를 사용한 레지스트 패턴 형성 방법 Download PDF

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Publication number
KR102001819B1
KR102001819B1 KR1020157029579A KR20157029579A KR102001819B1 KR 102001819 B1 KR102001819 B1 KR 102001819B1 KR 1020157029579 A KR1020157029579 A KR 1020157029579A KR 20157029579 A KR20157029579 A KR 20157029579A KR 102001819 B1 KR102001819 B1 KR 102001819B1
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South Korea
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group
composition
upper layer
forming
layer film
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KR20150126968A (ko
Inventor
샤오웨이 왕
데쓰오 오카야스
게오륵 파블로브스키
다카후미 기누타
Original Assignee
에이제트 일렉트로닉 머티어리얼스 (룩셈부르크) 에스.에이.알.엘.
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
    • C08F20/10—Esters
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G63/00—Macromolecular compounds obtained by reactions forming a carboxylic ester link in the main chain of the macromolecule
    • C08G63/02—Polyesters derived from hydroxycarboxylic acids or from polycarboxylic acids and polyhydroxy compounds
    • C08G63/12—Polyesters derived from hydroxycarboxylic acids or from polycarboxylic acids and polyhydroxy compounds derived from polycarboxylic acids and polyhydroxy compounds
    • C08G63/123—Polyesters derived from hydroxycarboxylic acids or from polycarboxylic acids and polyhydroxy compounds derived from polycarboxylic acids and polyhydroxy compounds the acids or hydroxy compounds containing carbocyclic rings
    • C08G63/133—Hydroxy compounds containing aromatic rings
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions

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  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Polyesters Or Polycarbonates (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
KR1020157029579A 2013-03-15 2014-03-14 상층막 형성용 조성물 및 이를 사용한 레지스트 패턴 형성 방법 Expired - Fee Related KR102001819B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2013-053401 2013-03-15
JP2013053401A JP6157160B2 (ja) 2013-03-15 2013-03-15 上層膜形成用組成物およびそれを用いたレジストパターン形成方法
PCT/JP2014/056858 WO2014142296A1 (ja) 2013-03-15 2014-03-14 上層膜形成用組成物およびそれを用いたレジストパターン形成方法

Publications (2)

Publication Number Publication Date
KR20150126968A KR20150126968A (ko) 2015-11-13
KR102001819B1 true KR102001819B1 (ko) 2019-07-19

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157029579A Expired - Fee Related KR102001819B1 (ko) 2013-03-15 2014-03-14 상층막 형성용 조성물 및 이를 사용한 레지스트 패턴 형성 방법

Country Status (6)

Country Link
US (1) US9482952B2 (enExample)
JP (1) JP6157160B2 (enExample)
KR (1) KR102001819B1 (enExample)
CN (1) CN105190441B (enExample)
TW (1) TWI610979B (enExample)
WO (1) WO2014142296A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10268117B2 (en) 2014-05-21 2019-04-23 Az Electronic Materials (Luxembourg) S.A.R.L. Top-layer membrane formation composition and method for forming resist pattern using same
CN106471057A (zh) * 2014-05-29 2017-03-01 Az电子材料（卢森堡）有限公司 空隙形成用组合物、具备使用该组合物而形成的空隙的半导体装置、以及使用了该组合物的半导体装置的制造方法
KR101713251B1 (ko) * 2015-01-14 2017-03-07 최상준 반사방지용 하드마스크 조성물
CN107250914A (zh) * 2015-02-26 2017-10-13 富士胶片株式会社 上层膜形成用组合物以及使用了该上层膜形成用组合物的图案形成方法及电子器件的制造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000512402A (ja) 1997-04-30 2000-09-19 クラリアント・インターナショナル・リミテッド フォトレジスト組成物用の反射防止膜用組成物及びそれの使用法
JP2010073340A (ja) 2008-09-16 2010-04-02 Mitsubishi Chemicals Corp 有機電界発光素子、有機ｅｌ表示装置、有機ｅｌ照明および有機薄膜パターニング用基板
JP2010098301A (ja) 2008-09-19 2010-04-30 Mitsubishi Chemicals Corp 有機薄膜パターニング用基板、有機電界発光素子、並びにこれを用いた有機ｅｌ表示装置および有機ｅｌ照明
JP2010108927A (ja) 2008-09-30 2010-05-13 Mitsubishi Chemicals Corp 有機電界発光素子、該有機電界発光素子の製造方法、有機ｅｌ表示装置および有機ｅｌ照明

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GB9827798D0 (en) * 1998-12-17 1999-02-10 Agency Ind Science Techn Electron beam resist
SG115693A1 (en) 2003-05-21 2005-10-28 Asml Netherlands Bv Method for coating a substrate for euv lithography and substrate with photoresist layer
GB0420704D0 (en) 2004-09-17 2004-10-20 Univ Birmingham Novel resist material and method for forming a patterned resist layer on a substrate
US7759046B2 (en) * 2006-12-20 2010-07-20 Az Electronic Materials Usa Corp. Antireflective coating compositions
JP5222624B2 (ja) * 2008-05-12 2013-06-26 富士フイルム株式会社 黒色感光性樹脂組成物、及びカラーフィルタ並びにその製造方法
JP5514448B2 (ja) * 2009-01-29 2014-06-04 富士フイルム株式会社 感活性光線または感放射線性樹脂組成物、および該組成物を用いたパターン形成方法
JP5653690B2 (ja) 2010-09-01 2015-01-14 旭化成イーマテリアルズ株式会社 ペリクル用枠体及びペリクル
US20120021555A1 (en) 2010-07-23 2012-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaic cell texturization
JP6004179B2 (ja) * 2010-10-21 2016-10-05 日産化学工業株式会社 Ｅｕｖリソグラフィー用レジスト上層膜形成組成物
JP5579129B2 (ja) * 2011-06-06 2014-08-27 富士フイルム株式会社 透明保護フィルム、光学補償フィルム、偏光板、及び液晶表示装置
JP5650088B2 (ja) * 2011-10-11 2015-01-07 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
JP5516557B2 (ja) 2011-12-06 2014-06-11 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000512402A (ja) 1997-04-30 2000-09-19 クラリアント・インターナショナル・リミテッド フォトレジスト組成物用の反射防止膜用組成物及びそれの使用法
JP2010073340A (ja) 2008-09-16 2010-04-02 Mitsubishi Chemicals Corp 有機電界発光素子、有機ｅｌ表示装置、有機ｅｌ照明および有機薄膜パターニング用基板
JP2010098301A (ja) 2008-09-19 2010-04-30 Mitsubishi Chemicals Corp 有機薄膜パターニング用基板、有機電界発光素子、並びにこれを用いた有機ｅｌ表示装置および有機ｅｌ照明
JP2010108927A (ja) 2008-09-30 2010-05-13 Mitsubishi Chemicals Corp 有機電界発光素子、該有機電界発光素子の製造方法、有機ｅｌ表示装置および有機ｅｌ照明

Also Published As

Publication number Publication date
TW201443131A (zh) 2014-11-16
TWI610979B (zh) 2018-01-11
WO2014142296A1 (ja) 2014-09-18
US20160011510A1 (en) 2016-01-14
CN105190441A (zh) 2015-12-23
KR20150126968A (ko) 2015-11-13
CN105190441B (zh) 2019-09-06
JP2014178573A (ja) 2014-09-25
JP6157160B2 (ja) 2017-07-05
US9482952B2 (en) 2016-11-01

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