WO2014091997A1 - 感光性樹脂組成物及びこれを用いた感光性フィルム - Google Patents
感光性樹脂組成物及びこれを用いた感光性フィルム Download PDFInfo
- Publication number
- WO2014091997A1 WO2014091997A1 PCT/JP2013/082703 JP2013082703W WO2014091997A1 WO 2014091997 A1 WO2014091997 A1 WO 2014091997A1 JP 2013082703 W JP2013082703 W JP 2013082703W WO 2014091997 A1 WO2014091997 A1 WO 2014091997A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- component
- resin composition
- mass
- photosensitive
- photosensitive resin
- Prior art date
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
- C08L63/04—Epoxynovolacs
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2363/00—Characterised by the use of epoxy resins; Derivatives of epoxy resins
- C08J2363/04—Epoxynovolacs
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2463/00—Characterised by the use of epoxy resins; Derivatives of epoxy resins
- C08J2463/04—Epoxynovolacs
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2463/00—Characterised by the use of epoxy resins; Derivatives of epoxy resins
- C08J2463/10—Epoxy resins modified by unsaturated compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/16—Applications used for films
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
- C08L2205/025—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group containing two or more polymers of the same hierarchy C08L, and differing only in parameters such as density, comonomer content, molecular weight, structure
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/03—Polymer mixtures characterised by other features containing three or more polymers in a blend
Definitions
- the present invention relates to a photosensitive resin composition and a photosensitive film using the same.
- a method using a positive photoresist as a raw material is known (for example, Patent Documents 1 to 6).
- the film thickness is generally 0.5 to several ⁇ m.
- the size range is wide, for example, from a sub-half micron region of about 0.3 ⁇ m to a considerably large size width of about several hundred ⁇ m. This makes it possible to finely process a wide variety of substrate surfaces.
- the positive photosensitive resin composition has a characteristic that a portion irradiated with light (exposed portion) can be removed with an alkaline aqueous solution, and a portion not irradiated with light (unexposed portion) remains as a film.
- a pattern can be formed by irradiating light again. Therefore, the step of etching the metal layer after exposing and developing the photosensitive layer is repeatedly performed on the substrate having two or more metal layers using the positive photosensitive resin composition, and the metal layer is formed on the substrate. Formation of a pattern has been studied.
- the present invention forms a photosensitive layer that is excellent in adhesion to various metals, sufficiently develops the exposed area and develops in the unexposed area, and can be repeatedly developed with a weak alkaline developer.
- An object is to provide a positive photosensitive resin composition and a photosensitive film using the same.
- the present invention includes (A) a modified novolak-type phenol resin having an unsaturated hydrocarbon group, (B) a novolac-type phenol resin obtained from metacresol and para-cresol, (C) a novolak-type phenol resin obtained from ortho-cresol, D) a compound that generates an acid by light and (E) a polybasic acid or polybasic acid anhydride, and the content of (E) component is (A) component, (B) component, (C) component, and (D) The positive photosensitive resin composition which is less than 40 mass parts with respect to 100 mass parts of total amounts of a component is provided.
- the weight average molecular weight of the component (A) is preferably 1000 to 15000.
- the weight average molecular weight of the component (B) is preferably 800 to 50,000.
- the weight average molecular weight of the component (C) is preferably 800 to 5000.
- the content of the component (C) is preferably 20 to 60 parts by mass with respect to 100 parts by mass as a total of the components (A), (B), (C) and (D).
- the carbon number of the unsaturated hydrocarbon group contained in the component (A) is preferably 4 to 100.
- the photosensitive resin composition may further contain (F) a fluorosurfactant. Furthermore, the said photosensitive resin composition can further contain (G) adhesion imparting agent.
- the present invention also provides a photosensitive film comprising a support film on which at least one surface has been release-treated, and a photosensitive layer provided on the release-treated surface of the support film, the photosensitive layer comprising Provides a photosensitive film which is a layer formed from the positive photosensitive resin composition of the present invention.
- a photosensitive layer is formed that has excellent adhesion to various metals, is sufficiently excellent in developability of exposed areas and developer resistance of unexposed areas, and can be repeatedly developed with a weak alkaline developer.
- a positive photosensitive resin composition and a photosensitive film using the same can be provided.
- the term “layer” includes a structure formed in a part in addition to a structure formed in the entire surface when observed as a plan view.
- the term “process” is not limited to an independent process, and even if it cannot be clearly distinguished from other processes, the term “process” is used if the intended purpose of the process is achieved. included.
- a numerical range indicated by using “to” indicates a range including the numerical values described before and after “to” as the minimum value and the maximum value, respectively.
- the positive photosensitive resin composition of the present embodiment includes a novolac phenol obtained from a modified novolac phenol resin having an unsaturated hydrocarbon group as component (A) and metacresol and paracresol as components (B).
- the component (A) is a modified novolac type phenol resin having an unsaturated hydrocarbon group.
- the novolac type phenol resin is a polycondensation product of a phenol derivative containing ortho-cresol or meta-cresol and para-cresol as main components and aldehydes. The polycondensation is performed in the presence of a catalyst such as an acid.
- the modified phenolic resin having an unsaturated hydrocarbon group is a reaction product (hereinafter referred to as “unsaturated hydrocarbon group-containing compound”) of a phenol derivative and a compound having an unsaturated hydrocarbon group (hereinafter, simply referred to as “unsaturated hydrocarbon group-containing compound”). It may be a polycondensation product of an “unsaturated hydrocarbon group-modified phenol derivative”) and an aldehyde, or a reaction product of a phenol resin and an unsaturated hydrocarbon group-containing compound.
- a modified novolak type phenolic resin having an unsaturated hydrocarbon group is generally a polycondensation product of a reaction product of a phenol derivative such as cresol with a compound having an unsaturated hydrocarbon group and an aldehyde, or It is a reaction product of a novolac type phenol resin and an unsaturated hydrocarbon group-containing compound.
- modified novolak type phenol resin having an unsaturated hydrocarbon group ortho-cresol modified with a compound having an unsaturated hydrocarbon group, or metacresol and para-cresol modified with a compound having an unsaturated hydrocarbon group
- the resulting novolac type phenolic resin can be used.
- a modified novolak type phenol resin having an unsaturated hydrocarbon group a resin obtained by modifying a novolak type phenol resin with an unsaturated hydrocarbon group-containing compound can also be used.
- the mass ratio of metacresol to paracresol is 30/70 to 70 from the viewpoint of developability and developer resistance. / 30, more preferably 35/65 to 65/45, and still more preferably 40/60 to 60/40.
- a phenol derivative other than cresol can be copolymerized.
- phenol derivatives other than cresol include phenol; 2-ethylphenol, 3-ethylphenol, 4-ethylphenol, 2-butylphenol, 3-butylphenol, 4-butylphenol, 2,3-xylenol, and 2,4-xylenol.
- Alkylphenols such as 2,5-xylenol, 2,6-xylenol, 3,4-xylenol, 3,5-xylenol, 2,3,5-trimethylphenol, 3,4,5-trimethylphenol; methoxyphenol, 2 -Alkoxyphenols such as methoxy-4-methylphenol; alkenylphenols such as vinylphenol and allylphenol; aralkylphenols such as benzylphenol; alkoxycarbonylphenols such as methoxycarbonylphenol; Benzoyloxy phenol arylcarbonyl phenols, halogenated phenols chlorophenol and the like; catechol, resorcinol, and a polyhydroxy benzene pyrogallol.
- phenol derivatives can be added within a range that does not impair the effects of the present invention, and the addition amount is 30% by mass or less based on the total amount of phenol derivatives used to obtain the component (A). It is preferable.
- aldehydes examples include formaldehyde, acetaldehyde, acetone, glyceraldehyde, and methyl glyoxylate.
- formaldehyde such as paraformaldehyde and trioxane, for reaction with a phenol derivative.
- the unsaturated hydrocarbon group of the unsaturated hydrocarbon group-containing compound preferably contains two or more unsaturated groups from the viewpoint of the adhesion of the resist pattern and the flexibility of the photosensitive layer. Further, from the viewpoint of compatibility when the resin composition is formed and flexibility when forming the photosensitive layer, the number of carbon atoms of the unsaturated hydrocarbon group is preferably 4 to 100, more preferably 8 to 80, More preferably, it has 10 to 60 carbon atoms.
- Examples of the unsaturated hydrocarbon group-containing compound include unsaturated hydrocarbons having 4 to 100 carbon atoms, polybutadiene having a carboxyl group, epoxidized polybutadiene, linoleyl alcohol, oleyl alcohol, unsaturated fatty acid and unsaturated fatty acid ester. It is done.
- Suitable unsaturated fatty acids include crotonic acid, myristoleic acid, palmitoleic acid, oleic acid, elaidic acid, vaccenic acid, gadoleic acid, erucic acid, nervonic acid, linoleic acid, ⁇ -linolenic acid, eleostearic acid, stearidone
- acids arachidonic acid, eicosapentaenoic acid, sardine acid and docosahexaenoic acid.
- an ester of an unsaturated fatty acid having 8 to 30 carbon atoms and a monovalent to trivalent alcohol having 1 to 10 carbon atoms is more preferable, and an unsaturated fatty acid having 8 to 30 carbon atoms and a trivalent alcohol are more preferable.
- esters with glycerin are especially preferred.
- Esters of unsaturated fatty acids having 8 to 30 carbon atoms and glycerin are commercially available as vegetable oils.
- the main component of vegetable oil is a mixture of esters of various unsaturated fatty acids and glycerin having different compositions, and examples of unsaturated fatty acids include the unsaturated fatty acids.
- examples of vegetable oils include non-drying oil having an iodine value of 100 or less, semi-drying oil having an iodine value of more than 100 and less than 130, and drying oil having an iodine value of 130 or more.
- Non-drying oils include, for example, olive oil, Asa seed oil, cashew oil, potato oil, camellia oil, castor oil, and peanut oil.
- semi-drying oils examples include corn oil, cottonseed oil, and sesame oil.
- drying oil examples include paulownia oil, linseed oil, soybean oil, walnut oil, safflower oil, sunflower oil, camellia oil and coconut oil.
- processed vegetable oils obtained by processing these vegetable oils may be used as esters of unsaturated fatty acids having 8 to 30 carbon atoms and glycerin.
- a non-drying oil among the above vegetable oils from the viewpoint of preventing gelation accompanying excessive progress of the reaction and improving the yield.
- drying oil from the viewpoint of improving the adhesion and mechanical properties of the resist pattern.
- drying oils tung oil, linseed oil, soybean oil, walnut oil and safflower oil are preferable, and tung oil and linseed oil are more preferable because the effects of the present invention can be more effectively and reliably exhibited.
- These unsaturated hydrocarbon group-containing compounds are used singly or in combination of two or more.
- the phenol derivative and the unsaturated hydrocarbon group-containing compound can be reacted to produce an unsaturated hydrocarbon group-modified phenol derivative.
- the above reaction is preferably performed at 50 to 130 ° C.
- the reaction ratio between the phenol derivative and the unsaturated hydrocarbon group-containing compound is unsaturated carbonization with respect to 100 parts by mass of the phenol derivative.
- the amount is preferably 1 to 100 parts by mass of the hydrogen group-containing compound, more preferably 5 to 50 parts by mass.
- p-toluenesulfonic acid, trifluoromethanesulfonic acid or the like may be used as a catalyst.
- the novolak-type phenol resin modified with the unsaturated hydrocarbon group-containing compound is produced by polycondensation of the unsaturated hydrocarbon group-modified phenol derivative produced by the above reaction with aldehydes.
- the reaction between the aldehydes and the unsaturated hydrocarbon group-modified phenol derivative is a polycondensation reaction, and conventionally known synthesis conditions for phenol resins can be used.
- the reaction is preferably performed in the presence of a catalyst such as an acid or a base, and an acid catalyst is more preferably used.
- a catalyst such as an acid or a base
- an acid catalyst is more preferably used.
- the acid catalyst include hydrochloric acid, sulfuric acid, formic acid, acetic acid, p-toluenesulfonic acid, and oxalic acid. These acid catalysts can be used alone or in combination of two or more.
- the polycondensation reaction is usually preferably carried out at a reaction temperature of 100 to 120 ° C.
- the reaction time varies depending on the type or amount of catalyst used, but is usually 1 to 50 hours.
- the reaction product is dehydrated under reduced pressure at a temperature of 200 ° C. or lower to obtain a modified novolak type phenol resin having an unsaturated hydrocarbon group.
- a solvent such as toluene, xylene, or methanol can be used.
- the modified novolak-type phenol resin having an unsaturated hydrocarbon group can also be obtained by polycondensing the unsaturated hydrocarbon group-modified phenol derivative with an aldehyde together with a compound other than phenol such as m-xylene.
- the molar ratio of the compound other than phenol to the compound obtained by reacting the phenol derivative with the unsaturated hydrocarbon group-containing compound is preferably less than 0.5.
- the modified novolak type phenol resin having an unsaturated hydrocarbon group can also be obtained by reacting a novolac type phenol resin with an unsaturated hydrocarbon group-containing compound.
- the reaction between the novolac type phenolic resin and the unsaturated hydrocarbon group-containing compound is usually preferably carried out at 50 to 130 ° C. Further, the reaction ratio between the novolac type phenol resin and the unsaturated hydrocarbon group-containing compound is from the viewpoint of improving the flexibility of the photosensitive layer, with respect to 100 parts by mass of the novolac type phenol resin, the unsaturated hydrocarbon group-containing compound 1 It is preferably from ⁇ 100 parts by weight, more preferably from 2 to 70 parts by weight, even more preferably from 10 to 30 parts by weight. At this time, if necessary, p-toluenesulfonic acid, trifluoromethanesulfonic acid or the like may be used as a catalyst. In addition, solvents, such as toluene, xylene, methanol, tetrahydrofuran, can be used for reaction.
- a phenol resin that is acid-modified by reacting a polybasic acid anhydride with the phenolic hydroxyl group remaining in the modified novolak-type phenol resin having an unsaturated hydrocarbon group it can.
- acid-modifying with a polybasic acid anhydride a carboxy group is introduced, and development with a weak alkaline aqueous solution (developer) can be facilitated.
- the polybasic acid anhydride is not particularly limited as long as it has an acid anhydride group formed by dehydration condensation of a carboxy group of a polybasic acid having a plurality of carboxy groups.
- the polybasic acid anhydride include phthalic anhydride, succinic anhydride, octenyl succinic anhydride, pentadodecenyl succinic anhydride, maleic anhydride, itaconic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride Acids, dibasic acid anhydrides such as methylhexahydrophthalic anhydride, nadic anhydride, 3,6-endomethylenetetrahydrophthalic anhydride, methylendomethylenetetrahydrophthalic anhydride, tetrabromophthalic anhydride and trimellitic anhydride, biphenyl Tetracarboxylic
- the polybasic acid anhydride is preferably a dibasic acid anhydride, and more preferably at least one selected from the group consisting of tetrahydrophthalic anhydride, succinic anhydride, and hexahydrophthalic anhydride. In this case, there is an advantage that a resist pattern having a better shape can be formed.
- the molecular weight of the component (A) is preferably 1000 to 30000 in terms of weight average molecular weight (Mw), considering the balance between solubility in an alkaline aqueous solution, photosensitive properties (sensitivity, resolution) and mechanical properties. 15000 is more preferable, 1200 to 14000 is further preferable, and 1500 to 12000 is particularly preferable.
- the weight average molecular weight in the present specification is a value obtained by measuring by gel permeation chromatography (GPC) and converting from a standard polystyrene calibration curve.
- GPC gel permeation chromatography
- the measurement conditions in GPC are as follows.
- Detector L-3300RI type (manufactured by Hitachi, Ltd., trade name)
- Eluent Tetrahydrofuran Temperature: 30 ° C
- Flow rate 1.0 mL / min
- the content of the component (A) in the photosensitive resin composition is as follows: , (B), (C) and (D) are preferably 10 to 35 parts by weight, more preferably 15 to 30 parts by weight, and more preferably 15 to 25 parts by weight with respect to 100 parts by weight of the total amount of components. More preferably, it is part.
- the component (B) is a polycondensation product of a phenol derivative containing metacresol and paracresol as main components and aldehydes. The polycondensation is performed in the presence of a catalyst such as an acid.
- the component (B) is an unmodified novolak type phenol resin that does not have an unsaturated hydrocarbon group.
- phenol derivatives other than metacresol and paracresol can be copolymerized in the range which does not impair the effect which this invention show
- the total amount of metacresol and paracresol is preferably 85% by mass or more based on the total amount of phenol derivatives used to obtain the component (B).
- aldehydes examples include those similar to the aldehydes exemplified in the component (A).
- the content of metacresol is preferably 30 to 70% by mass, more preferably 35 to 65% by mass, and 40 to 60% by mass with respect to the total amount of the mixture of metacresol and paracresol. More preferably it is.
- the molecular weight of the component (B) is preferably from 800 to 50,000 in terms of weight average molecular weight (Mw), considering the balance between solubility in an alkaline aqueous solution, photosensitive properties (sensitivity, resolution) and mechanical properties. It is more preferably 25000, and further preferably 1000 to 12000.
- the content ratio of the component (B) in the photosensitive resin composition is as follows: (A) component, (B) component, (C) component, and (D )
- the total amount of the components is preferably 5 to 30 parts by mass, more preferably 10 to 25 parts by mass, and still more preferably 15 to 20 parts by mass.
- Component (C) is a polycondensation product of a phenol derivative containing ortho-cresol as a main component and aldehydes. The polycondensation is performed in the presence of a catalyst such as an acid.
- the component (C) is an unmodified novolak type phenol resin that does not have an unsaturated hydrocarbon group.
- a phenol derivative other than orthocresol can be copolymerized.
- phenol derivatives other than orthocresol include phenol; metacresol, paracresol, 2-ethylphenol, 3-ethylphenol, 4-ethylphenol, 2-butylphenol, 3-butylphenol, 4-butylphenol, 2,3- Xylenol, 2,4-xylenol, 2,5-xylenol, 2,6-xylenol, 3,4-xylenol, 3,5-xylenol, 2,3,5-trimethylphenol, 3,4,5-trimethylphenol, etc.
- Alkylphenols alkoxyphenols such as methoxyphenol and 2-methoxy-4-methylphenol; alkenylphenols such as vinylphenol and allylphenol; aralkylphenols such as benzylphenol; methoxycarbonylphenol Alkoxycarbonyl phenol, halogenated phenols chlorophenol such; benzoyl arylcarbonyloxy phenol oxy phenol catechol, resorcinol, and a polyhydroxy benzene pyrogallol. These are used singly or in combination of two or more. These phenol derivatives can be added within a range that does not impair the effects of the present invention, and the addition amount is 15% by mass or less based on the total amount of phenol derivatives used to obtain the component (C). It is preferable.
- aldehydes examples include the same compounds as those exemplified for the component (A).
- the molecular weight of the component (C) is preferably from 500 to 5000, more preferably from 800 to 4000 in terms of weight-average molecular weight from the viewpoint of improving the developer resistance of the unexposed area and the developability of the exposed area in a well-balanced manner. 1000 to 3000 is more preferable.
- the content ratio of the component (C) is 100 masses of the total amount of the components (A), (B), (C) and (D).
- the amount is preferably 20 to 60 parts by weight, more preferably 30 to 60 parts by weight, and still more preferably 35 to 50 parts by weight with respect to parts.
- ⁇ (D) component The compound which generates an acid by light as component (D) is used as a photosensitizer.
- component (D) has a function of generating an acid by light irradiation and increasing the solubility of the light irradiated portion in an alkaline aqueous solution.
- a compound generally called a photoacid generator can be used as the component (D).
- Specific examples of the component (D) include o-quinonediazide compounds, aryldiazonium salts, diaryliodonium salts, triarylsulfonium salts and the like. Of these, 1,2-quinonediazide compounds are preferred because of their high sensitivity.
- the 1,2-quinonediazide compound is 1,2-quinonediamide and / or a derivative thereof.
- a 1,2-quinonediazide compound is obtained by reacting a 1,2-quinonediazide compound having a sulfo group and / or a sulfonyl chloride group with an organic compound having a hydroxyl group or an amino group (hereinafter simply referred to as “organic compound”).
- organic compound having a hydroxyl group or an amino group
- the hydroxyl group or amino group of the organic compound is bonded to the sulfo group or sulfonyl chloride group of the 1,2-quinonediazide compound. Note that at least one bond may be present in the molecule of the resulting 1,2-quinonediazide compound.
- Examples of the 1,2-quinonediazide compound having a sulfo group and / or a sulfonyl chloride group include 1,2-naphthoquinone-2-diazide-4-sulfonic acid and 1,2-naphthoquinone-2-diazide-5-sulfone.
- Examples include acids, orthoanthraquinone diazide sulfonic acid, 1,2-naphthoquinone-2-diazide-4-sulfonyl chloride, 1,2-naphthoquinone-2-diazide-5-sulfonyl chloride, and orthoanthraquinone diazide sulfonyl chloride.
- 1,2-naphthoquinone-2-diazide-4-sulfonic acid 1,2-naphthoquinone-2-diazide-5-sulfonic acid, 1,2-naphthoquinone-2-diazide-4-sulfonyl chloride and 1 1, 2-naphthoquinone-2-diazide-5-sulfonyl chloride is preferred.
- 1,2-quinonediazide compounds having a sulfo group and / or a sulfonyl chloride group are well dissolved in a solvent, so that the reaction efficiency with an organic compound can be increased.
- organic compound examples include polyhydroxybenzophenones, bis [(poly) hydroxyphenyl] alkanes, tris (hydroxyphenyl) methanes or methyl-substituted products thereof, bis (cyclohexylhydroxyphenyl) (hydroxyphenyl) methanes, or Its methyl substitution product, phenol, p-methoxyphenol, dimethylphenol, hydroquinone, naphthol, pyrocatechol, pyrogallol, pyrogallol monomethyl ether, pyrogallol-1,3-dimethyl ether, gallic acid, aniline, p-aminodiphenylamine, 4,4 ′ A homopolymer of diaminobenzophenone, novolak, pyrogallol-acetone resin, p-hydroxystyrene or a copolymer with a monomer copolymerizable therewith. These are used singly or in combination of two or more.
- polyhydroxybenzophenones examples include 2,3,4-trihydroxybenzophenone, 2,4,4′-trihydroxybenzophenone, 2,4,6-trihydroxybenzophenone, 2,3,6-trihydroxybenzophenone, 2,3,4-trihydroxy-2'-methylbenzophenone, 2,3,4,4'-tetrahydroxybenzophenone, 2,2 ', 4,4'-tetrahydroxybenzophenone, 2,3', 4,4 ', 6-pentahydroxybenzophenone, 2,2', 3,4,4'-pentahydroxybenzophenone, 2,2 ', 3,4,5-pentahydroxybenzophenone, 2,3', 4,4 ', 5 ', 6-Hexahydroxybenzophenone and 2,3,3', 4,4 ', 5'-Hexahydroxybenzopheno And the like. These are used singly or in combination of two or more.
- Examples of bis [(poly) hydroxyphenyl] alkanes include bis (2,4-dihydroxyphenyl) methane, bis (2,3,4-trihydroxyphenyl) methane, and 2- (4-hydroxyphenyl) -2. -(4'-hydroxyphenyl) propane, 2- (2,4-dihydroxyphenyl) -2- (2 ', 4'-dihydroxyphenyl) propane, 2- (2,3,4-trihydroxyphenyl) -2 -(2 ', 3', 4'-trihydroxyphenyl) propane, 4,4 '- ⁇ 1- [4- [2- (4-hydroxyphenyl) -2-propyl] phenyl] ethylidene ⁇ bisphenol and 3, 3′-dimethyl- ⁇ 1- [4- [2- (3-methyl-4-hydroxyphenyl) -2-propyl] phenyl] ethylidene ⁇ bisphenol It is. These are used singly or in combination of two or more.
- tris (hydroxyphenyl) methanes or methyl-substituted products thereof include tris (4-hydroxyphenyl) methane, bis (4-hydroxy-3,5-dimethylphenyl) -4-hydroxyphenylmethane, bis (4- Hydroxy-2,5-dimethylphenyl) -4-hydroxyphenylmethane, bis (4-hydroxy-3,5-dimethylphenyl) -2-hydroxyphenylmethane, bis (4-hydroxy-2,5-dimethylphenyl)- 2-hydroxyphenylmethane, bis (4-hydroxy-2,5-dimethylphenyl) -3,4-dihydroxyphenylmethane and bis (4-hydroxy-3,5-dimethylphenyl) -3,4-dihydroxyphenylmethane Can be mentioned. These are used singly or in combination of two or more.
- Examples of bis (cyclohexylhydroxyphenyl) (hydroxyphenyl) methanes or methyl-substituted products thereof include bis (3-cyclohexyl-4-hydroxyphenyl) -3-hydroxyphenylmethane and bis (3-cyclohexyl-4-hydroxyphenyl).
- organic compounds are polyhydroxybenzophenones, bis [(poly) hydroxyphenyl] alkanes, tris (hydroxyphenyl) methanes, and / or bis (cyclohexylhydroxyphenyl) (hydroxyphenyl) methanes. It is preferable.
- the organic compound is more preferably a compound represented by any one of the following general formulas (1) to (3).
- the difference in solubility in the developer before and after the light irradiation to the photosensitive resin composition becomes large, there is an advantage that the image contrast is more excellent.
- R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 9 , R 10 , R 11 and R 12 are Each independently represents a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms, or a substituted or unsubstituted alkoxy group having 1 to 5 carbon atoms, and X represents a single bond, an oxygen atom or a phenylene group. .
- a 1,2-quinonediazide compound having a sulfo group and / or a sulfonyl chloride group is represented by 1,2-naphthoquinone-2.
- -Diazide-4-sulfonic acid, 1,2-naphthoquinone-2-diazide-5-sulfonic acid, 1,2-naphthoquinone-2-diazide-4-sulfonyl chloride, or 1,2-naphthoquinone-2-diazide- 5-Sulphonyl chloride is preferred.
- 1,2-quinonediazide compounds having a sulfo group and / or a sulfonyl chloride group have good compatibility with the compounds represented by the above general formulas (1) to (3). It is possible to reduce the amount of aggregates generated when the component (D) is mixed with at least one selected from the group consisting of the components (B) and (C). In addition, when a photosensitive resin composition containing these is used as a photosensitive component of a positive photoresist, the sensitivity, image contrast, and heat resistance are excellent.
- the compounds represented by the general formulas (1) to (3) are more preferably compounds represented by any of the following chemical formulas (4) to (6). In this case, there is an advantage that it is more excellent in light sensitivity.
- Examples of the synthesis method of the 1,2-quinonediazide compound using the compounds represented by the general formulas (4) to (6) include the following methods. That is, for example, a compound represented by any one of the above general formulas (4) to (6) and 1,2-naphthoquinone-2-diazide-sulfonyl chloride are mixed with a solvent such as dioxane or THF (tetrahydrofuran). Examples thereof include a method in which the reaction is carried out in the presence of an alkali catalyst such as triethylamine, triethanolamine, alkali carbonate or alkali hydrogencarbonate.
- an alkali catalyst such as triethylamine, triethanolamine, alkali carbonate or alkali hydrogencarbonate.
- a 1,2-quinonediazide compound in which the hydroxyl group of the compound represented by the general formulas (4) to (6) and the sulfonyl group of 1,2-naphthoquinone-2-diazide-sulfonyl chloride are condensed is synthesized.
- 1,2-naphthoquinone-2-diazide-sulfonyl chloride 1,2-naphthoquinone-2-diazide-4-sulfonyl chloride or 1,2-naphthoquinone-2-diazide-5-sulfonyl chloride is preferable. . You may use these individually by 1 type or in combination of 2 or more types.
- the content of the component (D) in the photosensitive resin composition is 100 parts by mass of the total amount of the component (A), the component (B), the component (C), and the component (D) from the viewpoints of the photosensitive properties and mechanical properties. On the other hand, it is preferably 3 to 30 parts by mass, more preferably 5 to 25 parts by mass, and particularly preferably 10 to 20 parts by mass.
- a component is a polybasic acid or a polybasic acid anhydride.
- the content of the component (E) is 100 parts by mass with respect to the total amount of the component (A), the component (B), the component (C), and the component (D). Less than 40 parts by mass.
- the polybasic acid anhydride is not particularly limited as long as it has an acid anhydride group formed by dehydration condensation of a carboxyl group of a polybasic acid having a plurality of carboxyl groups.
- polybasic acid anhydride examples include phthalic anhydride, succinic anhydride, octenyl succinic anhydride, pentadodecenyl succinic anhydride, maleic anhydride, itaconic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride Acids, dibasic acid anhydrides such as methylhexahydrophthalic anhydride, nadic anhydride, 3,6-endomethylenetetrahydrophthalic anhydride, methylendomethylenetetrahydrophthalic anhydride, tetrabromophthalic anhydride and pyromellitic anhydride, biphenyltetra Carboxylic dianhydride, naphthalene tetracarboxylic dianhydride, diphenyl ether tetracarboxylic dianhydride, butane tetrac
- the polybasic acid anhydride is preferably a dibasic acid anhydride, and more preferably at least one selected from the group consisting of tetrahydrophthalic anhydride, succinic anhydride, and phthalic anhydride. In this case, there is an advantage that a resist pattern having a better shape can be formed.
- the polybasic acid is not particularly limited as long as it has a polybasic acid having a plurality of carboxyl groups obtained by hydrolyzing the polybasic acid anhydride.
- a substance containing both a polybasic acid and a polybasic acid anhydride in one molecule such as trimellitic anhydride or pyromellitic dianhydride, may be used. Good.
- the upper limit of the content of the component (E) in the photosensitive resin composition is 100 in terms of the total amount of the component (A), the component (B), the component (C), and the component (D) from the viewpoint of the photosensitive properties and mechanical properties. It is less than 40 parts by weight, preferably 35 parts by weight or less, and more preferably 30 parts by weight or less with respect to parts by weight.
- the lower limit of the content of the component (E) is more than 0 parts by mass, preferably 0.1 parts by mass or more, more preferably 1 part by mass or more, and 3 parts by mass or more. More preferably, the amount is more preferably 5 parts by mass or more.
- the photosensitive resin composition may contain a fluorosurfactant as the component (F).
- fluorosurfactant examples include BM-1000, BM-1100 (above, BM CHEMIE, trade name); Megafuck F142D, Megafuck F172, Megafuck F173, Megafuck F183, Megafuck R-08 , Megafuck R-30, Megafuck R-90PM-20, Megafuck BL-20 (above, DIC Corporation, trade name, “Megafuck” is a registered trademark); Florard FC-135, Florard FC-170C , FLORARD FC-430, FLORARD FC-431, NOVEC FC-4430, NOVEC FC-4432 (supplied by Sumitomo 3M, trade name); Surflon S-112, Surflon S-113, Surflon S-131, Surflon S -141, Surflon S-145 (above Asahi Glass Co., Ltd., trade name, "Sarfron” can be used the registered trademark.), And the like of the commercially available product.
- Novec FC-4430 and Novec FC-4432 which are fluorosurfactants having a perfluorobutanesulfonic acid skeleton, are preferable from the viewpoint of further improving the crack generation after exposure. These are used singly or in combination of two or more.
- the content ratio is 0. 0 with respect to 100 parts by mass of the total amount of the components (A), (B), (C) and (D).
- the amount is preferably 1 to 5 parts by mass, preferably 0.2 to 2 parts by mass, and more preferably 0.3 to 1 part by mass.
- the content ratio of the component (F) exceeds 5 parts by mass, the image contrast tends to decrease.
- the photosensitive resin composition of the present embodiment adheres as a component (G).
- a property-imparting agent may be contained.
- an adhesion aid such as a nitrogen-containing compound, a silane coupling agent, and an aluminum chelating agent, and a solubility regulator such as a high boiling point solvent can be used.
- the nitrogen-containing compound preferably has an azole group, amino group, amide group, imino group, imide group, etc., for example, a triazole compound such as imidazole, pyrazole, benzimidazole, benzotriazole, mercaptotriazole, alkyl Amine, piperidine, piperazine, morpholine, aniline, ethylenediamine, catecholamine, ethylenediaminetetraacetic acid, bipyridine, terpyridine and phenanthroline.
- a triazole compound such as imidazole, pyrazole, benzimidazole, benzotriazole, mercaptotriazole, alkyl Amine, piperidine, piperazine, morpholine, aniline, ethylenediamine, catecholamine, ethylenediaminetetraacetic acid, bipyridine, terpyridine and phenanthroline.
- the silane coupling agent preferably has a reactive substituent such as a carboxyl group, a methacryloyl group, an isocyanate group, and an epoxy group.
- a reactive substituent such as a carboxyl group, a methacryloyl group, an isocyanate group, and an epoxy group.
- trimethoxysilylbenzoic acid ⁇ -methacryloxypropyltrimethoxysilane
- Examples include vinyltriacetoxysilane, vinyltrimethoxysilane, ⁇ -glycidoxypropyltrimethoxysilane, and ⁇ - (3,4-epoxycyclohexyl) ethyltrimethoxysilane.
- aluminum chelating agent examples include aluminum ethyl acetoacetate / diisopropylate, aluminum trisethyl acetoacetate, aluminum bisethyl acetoacetate / monoacetylacetonate, and aluminum trisacetylacetonate.
- nitrogen-containing compounds are preferred, triazole compounds are more preferred, and mercaptotriazoles are even more preferred from the viewpoint of developability.
- blending an adhesion assistant in the photosensitive resin composition is 0.1 with respect to 100 mass parts of total amounts of (A) component, (B) component, (C) component, and (D) component. Is preferably 5 to 5 parts by mass, more preferably 0.15 to 3 parts by mass, and still more preferably 0.2 to 2 parts by mass.
- the high boiling point solvent represents a solvent having a boiling point of 150 ° C. or higher under normal pressure, for example, N-methylformamide, N, N-dimethylformamide, N, N-dimethylacetamide, N-methylpyrrolidone, dimethyl sulfoxide, dihexyl ether , Caproic acid, caprylic acid, 1-octanol, 1-nonanol, benzyl alcohol, benzyl acetate, ethyl benzoate, ⁇ -butyrolactone and phenyl cellosolve acetate.
- the blending amount of the solubility modifier can be appropriately adjusted according to the application or application method, and is not particularly limited as long as the blending amount allows the photosensitive resin composition to be uniformly mixed. It is preferably 60% by mass or less, and more preferably 40% by mass or less, based on the total amount of the object.
- the photosensitive resin composition of the present embodiment may contain a solvent to be described later in order to adjust the viscosity.
- a sensitizer, a light-absorbing agent (dye), a crosslinking agent, a plasticizer, and a pigment are used.
- Additives such as fillers, flame retardants, stabilizers, peeling accelerators, antioxidants, fragrances, imaging agents, thermal crosslinking agents, and the like may be included. These can be used individually by 1 type or in combination of 2 or more types. Although the compounding quantity of these additives will not be restrict
- the photosensitive resin composition can be prepared by mixing and stirring by a usual method.
- a filler, a pigment, or the like is added, it is dispersed and mixed using a disperser such as a dissolver, a homogenizer, or a three roll mill. That's fine.
- the photosensitive film according to this embodiment is formed from a support film having at least one surface subjected to a release treatment, and the positive photosensitive resin composition provided on the release treatment surface of the support film.
- a protective film can be laminated
- FIG. 1 is a schematic cross-sectional view showing an embodiment of a photosensitive film.
- the photosensitive film 10 shown in FIG. 1 has a structure in which a photosensitive layer 4 is laminated on a support film 2 and a protective film 6 is laminated on the surface of the photosensitive layer 4 opposite to the support film 2.
- the photosensitive layer 4 is a layer formed using the photosensitive resin composition of the present embodiment.
- the release treatment refers to the surface of the support film with a release agent such as a silicone surfactant, a silicone compound such as a silicone resin, a fluorine surfactant, a fluorine-containing compound such as a fluorine resin, or an alkyd resin.
- a release agent such as a silicone surfactant, a silicone compound such as a silicone resin, a fluorine surfactant, a fluorine-containing compound such as a fluorine resin, or an alkyd resin.
- a physical treatment such as a chemical treatment for thinly coating (coating) or a corona treatment for a support film.
- a release agent When a release agent is applied to the support film, it is preferably applied as thin as possible to obtain a release effect. After application of the release agent, the release agent may be fixed to the support film by heat or UV treatment. More preferably, an undercoat layer is applied to the support film before the release agent is applied.
- the surface tension (wetting tension) at 23 ° C. of the release treatment surface of the support film is preferably 20 to 45 mN / m. It is more preferably 30 to 45 mN / m, still more preferably 35 to 45 mN / m.
- the 180 ° C. peel strength at 23 ° C. of the release treatment surface of the support film is 5 to 300 gf / inch (1.97 to 118 gf / cm or 19.3 to 1156.4). ⁇ 10 ⁇ 3 N / cm), preferably 5 to 200 gf / inch (1.97 to 78.7 gf / cm or 19.3 to 771.3 ⁇ 10 ⁇ 3 N / cm). More preferably, it is 100 to 200 gf / inch (39.4 to 78.7 gf / cm or 386.1 to 771.3 ⁇ 10 ⁇ 3 N / cm).
- the 180 ° peel strength can be measured by a general method (for example, a method according to JIS K6854-2) using an adhesive tape (manufactured by Nitto Denko Corporation, trade name: “NITTO31B”). .
- the support film before the release treatment is not particularly limited as long as the surface is smooth.
- a polymer film formed from a polyester such as polyethylene terephthalate, a polyolefin such as polypropylene or polyethylene can be used.
- PET film a polyethylene terephthalate film (hereinafter referred to as “PET film”) is preferable.
- PET films on which at least one surface has been release-treated with a silicone compound include, for example, trade names “Purex A53”, “A31-25”, “A51-25” and “A53-” manufactured by Teijin DuPont Films Ltd. 38 "is commercially available (" Purex "is a registered trademark).
- the thickness of the support film 2 is preferably 15 to 50 ⁇ m, and more preferably 25 to 40 ⁇ m. If the thickness of the support film 2 is less than 15 ⁇ m, there is a possibility that distortion at the time of the mold release treatment may remain or wrinkles may occur when the film is wound up. At the time of thermocompression bonding when the layer 4 is laminated, bubbles tend to be easily caught between the substrate and the photosensitive layer 4.
- the protective film 6 for example, a polymer film formed from polyester such as PET, polyolefin such as polypropylene and polyethylene can be used. Moreover, you may use the polymer film which gave the mold release process similarly to a support body film. From the viewpoint of flexibility when the photosensitive film is rolled up, a polyethylene film is particularly preferable as the protective film 6. Moreover, it is preferable that the protective film 6 is a film with a low fish eye so that dents on the surface of the photosensitive layer can be reduced.
- the thickness of the protective film 6 is preferably 10 to 100 ⁇ m, and particularly preferably 15 to 80 ⁇ m.
- the photosensitive layer 4 can be formed by applying the photosensitive resin composition as a liquid resist on the support film 2.
- the photosensitive resin composition is applied onto the support film 2, if necessary, the photosensitive resin composition is dissolved in a predetermined solvent to obtain a solution having a solid content of 20 to 90% by mass. You may use as a coating liquid.
- solvent examples include methanol, ethanol, propanol, isopropanol, ethylene glycol, propylene glycol, octane, decane, petroleum ether, petroleum naphtha, hydrogenated petroleum naphtha, solvent naphtha, acetone, methyl isobutyl ketone, diethyl ketone, and diisobutyl ketone.
- the coating method examples include roll coating, comma coating, gravure coating, air knife coating, die coating, bar coating, and spin coating.
- the solvent can be removed, for example, by heating.
- the heating temperature is preferably about 70 to 150 ° C.
- the heating time is preferably about 5 to about 30 minutes.
- the amount of the remaining organic solvent in the photosensitive layer 4 formed in this manner is preferably 2% by mass or less from the viewpoint of preventing the organic solvent from diffusing in the subsequent step.
- the thickness of the photosensitive layer 4 varies depending on the application, but the thickness after removing the solvent is preferably about 1 to 30 ⁇ m.
- the thickness of the photosensitive layer 4 is preferably 1 to 5 ⁇ m from the viewpoint of reducing cracks in the photosensitive layer 4.
- a modified phenol resin having an unsaturated hydrocarbon group is used as the component (A) to thereby prepare the photosensitive layer 4. Cracks can be suppressed.
- the photosensitive film 10 is an intermediate layer such as a cushion layer, an adhesive layer, a light absorption layer, or a gas barrier layer between the support film 2 and the photosensitive layer 4 and / or between the photosensitive layer 4 and the protective film 6.
- a protective layer may be further provided.
- the photosensitive film 10 can be wound around, for example, a cylindrical core and stored in a roll form.
- the core is not particularly limited as long as it is conventionally used.
- plastic such as polyethylene resin, polypropylene resin, polystyrene resin, polyvinyl chloride resin, ABS resin (acrylonitrile-butadiene-styrene copolymer), etc. Etc.
- an end face separator from the viewpoint of protecting the end face on the end face of the photosensitive film (photosensitive film roll) wound in a roll shape, and in addition, a moisture-proof end face separator is installed from the viewpoint of edge fusion resistance. It is preferable to do.
- a moisture-proof end face separator is installed from the viewpoint of edge fusion resistance. It is preferable to do.
- packaging the photosensitive film 10 it is preferable to wrap it in a black sheet with low moisture permeability.
- the resist pattern forming method includes a step of forming a photosensitive layer on a substrate using the positive photosensitive resin composition, a step of exposing the photosensitive layer formed on the substrate, and a photosensitive layer after exposure. And developing a resist pattern with an aqueous alkali solution to form a resist pattern.
- the photosensitive layer formed from the positive photosensitive resin composition according to the present embodiment can be repeatedly subjected to the exposure process and the development process.
- a base material for forming the resist pattern for example, a base material provided with two or more metal layers on a substrate made of a material that is not dissolved in an etching solution for metal can be used.
- substrate what is comprised from organic compounds, such as metal oxides, such as glass, a titanium oxide, an alumina, semiconductors, such as a silicon
- the metal layer include a layer made of a metal such as gold, silver, copper, aluminum, iron, tungsten, molybdenum, titanium, or nickel, or a metal oxide such as indium tin oxide (ITO) or zinc oxide.
- the metal layer can be formed by laminating these metals or metal oxides on the substrate by vacuum vapor deposition, sputtering, electrolytic plating, electroless plating, or chemical vapor deposition using plasma.
- a method for forming a photosensitive layer a method of forming the coating film (photosensitive layer) by applying the positive photosensitive resin composition on a substrate and drying it to evaporate a solvent or the like, the above-mentioned photosensitive film And a method of transferring the photosensitive layer on the substrate.
- the same method as the method of applying on the support film described above can be used.
- the resist pattern is formed by laminating the photosensitive film 10 on the base material so that the photosensitive layer 4 is in close contact, and then irradiating with actinic rays in an image form to remove the exposed portion by development.
- the component (D) which is a photosensitive agent interacts with the phenol resin which is the component (A), (B) and (C) and works as a dissolution inhibitor. Difficult to dissolve in alkali.
- the component (D) is photolyzed and loses the dissolution inhibiting effect. Thereby, the exposed part irradiated with actinic light becomes alkali-soluble.
- the protective film 6 is removed, and then the photosensitive layer 4 is heated to about 70 to 130 ° C. while being applied to the substrate at about 0.1 to 1 MPa (1 to 10 kgf / cm). And a method of pressure bonding using a laminator or the like at a pressure of about 2 ). Such a lamination process may be performed under reduced pressure.
- the photosensitive layer 4 thus laminated on the substrate is irradiated with an actinic ray in an image form through a negative or positive mask pattern to form an exposed portion.
- the support film 2 existing on the photosensitive layer 4 is transparent to the active light, the support film 2 can be irradiated with the active light, and the support film 2 can be applied to the active light. If the support film 2 is removed, the photosensitive layer 4 is irradiated with actinic rays.
- the active light source a conventionally known light source such as a carbon arc lamp, a mercury vapor arc lamp, a high-pressure mercury lamp, a xenon lamp, or the like that effectively emits ultraviolet light, visible light, or the like is used. Further, a laser direct drawing exposure method or the like may be used.
- the photosensitive layer in the exposed portion is removed by development to form a resist pattern.
- a method for removing the exposed portion when the support film 2 is present on the photosensitive layer 4, the support film 2 is removed by an auto peeler or the like, and a developing solution such as an alkaline aqueous solution, an aqueous developer, or an organic solvent is used. Examples include a method in which an exposed portion is removed and developed by wet development or dry development.
- alkali used for wet development examples include weak alkali inorganic compounds such as sodium carbonate, potassium carbonate and ammonia; alkali metal compounds such as sodium hydroxide and potassium hydroxide; alkaline earth metal compounds such as calcium hydroxide; monomethylamine Weakly alkaline organic compounds such as dimethylamine, trimethylamine, monoethylamine, diethylamine, triethylamine, monopropylamine, dimethylpropylamine, monoethanolamine, diethanolamine, triethanolamine, ethylenediamine, diethylenetriamine, dimethylaminoethyl methacrylate, polyethyleneimine; Examples thereof include methylammonium hydroxide and tetraethylammonium hydroxide.
- the pH of the alkaline aqueous solution is preferably in the range of 9 to 13, and the pH is preferably in the range of 9 to 12 from the viewpoint of reducing the environmental load.
- the temperature is adjusted according to the developability of the photosensitive layer. Moreover, you may mix surfactant, an antifoamer, an organic solvent, etc. in alkaline aqueous solution.
- the developing method examples include a dip method, a spray method, brushing, and slapping.
- the resist pattern may be cured and used by heating at about 60 to 250 ° C., if necessary.
- the transfer property of the photosensitive layer 4 to the base material is excellent, so that the support film 2 can be easily peeled or removed, and the photosensitive layer 4 can be transferred to the base material without any defects. As a result, a resist pattern with sufficiently few defects can be formed.
- the exposed portion of the photosensitive layer 4 is easily dissolved in a weak alkaline aqueous solution and peeled off from the substrate, and the weak alkali developability is extremely good, so that a fine resist pattern with excellent contrast can be formed. Become.
- a positive photosensitive resin composition can be directly applied onto the substrate and dried to form a photosensitive layer.
- the positive photosensitive resin composition is spin-coated on the above-described substrate using a spinner or the like to form a coating film.
- the substrate on which the coating film is formed is dried using a hot plate, an oven or the like. Thereby, a photosensitive layer is formed on the substrate.
- the subsequent exposure step and development step can be performed in the same manner as when the photosensitive film 10 is used.
- the above-described exposure and development can be repeated twice or more as necessary with a photosensitive layer formed on the substrate. That is, by using the positive photosensitive resin composition according to the present embodiment, the resist pattern once formed when etching two or more metal layers by repeating the exposure and development steps is peeled off from the base material again. A step of forming a new photosensitive layer on the substrate can be omitted. Thereby, since the process at the time of etching the metal layer of a base material using a resist pattern can be shortened, it is useful also in terms of cost and environment.
- the positive photosensitive resin composition of this embodiment can be suitably used for a touch panel manufacturing method.
- the manufacturing method of the touch panel according to the present embodiment includes a step of etching the base material on which the resist pattern is formed by the resist pattern forming method. The etching process is performed on the conductor layer of the base material using the formed resist pattern as a mask.
- the touch panel is manufactured by forming the lead wiring and the pattern of the transparent electrode by the etching process.
- the manufacturing method of the touch panel using the positive photosensitive resin composition of this embodiment is demonstrated, contrasting with the case where a negative photosensitive resin composition is used.
- FIG. 2 is a schematic cross-sectional view showing a method for manufacturing a touch panel using a negative photosensitive resin composition.
- a metal layer 26 of a laminated substrate including a support substrate 22, a transparent conductive layer 24 provided on one surface of the support substrate 22, and a metal layer 26 provided on the transparent conductive layer 24.
- a first step of forming a resist pattern 29 made of a cured product of the photosensitive resin composition the metal layer 26 and the transparent conductive layer 24 are etched, and the remainder of the transparent conductive layer 24 and the remainder of the metal layer 26 are etched.
- the support base 22, the transparent conductive layer 24 provided on one surface of the support base 22, and the transparent conductive layer 24 were provided.
- a negative photosensitive layer 28 is laminated on the metal layer 26 of the laminated base material including the metal layer 26 using a negative photosensitive resin composition.
- the photosensitive layer 28 may include a support film on the surface opposite to the metal layer 26.
- the metal layer 26 examples include a metal layer containing copper, an alloy of copper and nickel, a molybdenum-aluminum-molybdenum laminate, an alloy of silver, palladium and copper, and the like.
- the transparent conductive layer 24 contains indium tin oxide (ITO).
- the photosensitive layer 28 is cured by irradiation with actinic rays to form a cured product region, and a region other than the cured product region of the photosensitive layer is removed from the laminated substrate.
- the resist pattern 29 is formed on a lamination
- the metal layer 26 and the transparent conductive layer 24 in a region not masked by the resist pattern 29 are removed from the support substrate 22 by etching.
- the etching method is appropriately selected according to the layer to be removed.
- the etching solution for removing the metal layer include a cupric chloride solution, a ferric chloride solution, and a phosphoric acid solution.
- oxalic acid, hydrochloric acid, aqua regia, etc. are used as etching liquid for removing a transparent conductive layer.
- FIG. 2 (c) is a diagram showing the state after the etching process, and on the support substrate 22, a laminate composed of the remainder of the metal layer 26, the remainder of the transparent conductive layer 24 and the remainder of the photosensitive layer 28 is formed.
- the resist pattern 29 is removed from the laminate.
- an aqueous solution that is more alkaline than the alkaline aqueous solution used in the above-described development step can be used.
- this strongly alkaline aqueous solution a 1 to 10% by mass sodium hydroxide aqueous solution, a 1 to 10% by mass potassium hydroxide aqueous solution and the like are used.
- the resist pattern peeling method include an immersion method and a spray method, which may be used alone or in combination.
- FIG. 2 (d) is a diagram showing the resist pattern 29 after peeling, and a laminated pattern composed of the remaining metal layer 26 and the remaining transparent conductive layer 24 is formed on the support substrate 22.
- a part of the metal layer 26 other than a part for forming the metal wiring is removed from the laminated pattern, and the metal wiring composed of the remaining part of the metal layer 26 and the transparent electrode composed of the remaining part of the transparent conductive layer 24 are formed.
- the photosensitive layer 30 is formed using the negative photosensitive resin composition on the laminated base material subjected to the second step (FIG. 2E).
- a resist pattern 31 made of a cured product of the photosensitive layer 30 is formed through exposure and development of the photosensitive layer 30 (FIG. 2F).
- the metal layer 26 is removed from the portion of the laminated pattern where the resist pattern 31 is not formed by an etching process.
- the etching treatment liquid the same one as the etching liquid for removing the metal layer can be used.
- FIG. 2G is a diagram showing the state after the etching process.
- a transparent electrode composed of the remaining portion of the transparent conductive layer 24 is formed on the support base 22, and the metal layer 26 and the resist are formed on a part of the transparent electrodes.
- a laminate composed of the pattern 31 is formed. By removing the resist pattern 31 from this laminated body, as shown in FIG. 2 (h), on the support base 22, a transparent electrode made up of the remaining portion of the transparent conductive layer 24 and a metal made up of the remaining portion of the metal layer 26. Wiring is formed.
- the step of forming the photosensitive layer again becomes unnecessary.
- a portion irradiated with light can be removed with an alkaline aqueous solution, and a portion not irradiated with light (unexposed portion) remains as a film. Since it has characteristics, a pattern can be formed by irradiating the remaining film with light again.
- FIG. 3 is a schematic cross-sectional view showing an embodiment of a touch panel manufacturing method using a positive photosensitive resin composition.
- the support base 22, the transparent conductive layer 24 provided on one surface of the support base 22, and the transparent conductive layer 24 were provided.
- a positive photosensitive layer 40 is laminated using a positive photosensitive resin composition on the metal layer 26 of a laminated substrate including the metal layer 26.
- the photosensitive layer 40 may include a support film on the surface opposite to the metal layer 26.
- the exposed portion of the photosensitive layer 40 is removed from the laminated substrate by development. Thereby, as shown in FIG. 3B, a resist pattern 40a composed of the unexposed portion of the photosensitive layer 40 is formed on the laminated base material.
- the metal layer 26 and the transparent conductive layer 24 in a region not masked by the resist pattern 40a are removed from the support substrate 22 by etching.
- the etching method is appropriately selected according to the layer to be removed.
- the etching solution for removing the metal layer include an ammonium persulfate solution, a sodium persulfate solution, a cupric chloride solution, a ferric chloride solution, and a phosphoric acid solution.
- oxalic acid, hydrochloric acid, aqua regia, etc. are used as etching liquid for removing a transparent conductive layer.
- FIG. 3C is a diagram showing the state after the etching process, and a laminated body including the remaining metal layer 26, the remaining transparent conductive layer 24 and the resist pattern 40 a is formed on the support base 22.
- the photosensitive layer in the exposed portion is removed from the laminated substrate by development.
- the resist pattern which consists of the resist pattern 40b of an unexposed part is formed on a lamination
- the metal layer 26 is removed from the portion of the laminated pattern where the resist pattern 40b is not formed by an etching process.
- the etching treatment liquid the same one as the etching liquid for removing the metal layer can be used.
- FIG. 3 (e) is a diagram showing the state after the etching process.
- a transparent electrode composed of the remaining portion of the transparent conductive layer 24 is formed on the support base 22, and the metal layer 26 and the resist are formed on a part of the transparent electrodes.
- a laminate composed of the pattern 40b is formed.
- the transparent electrode made up of the remaining portion of the transparent conductive layer 24 and the metal made up of the remaining portion of the metal layer 26 are formed on the support substrate 22. Wiring is formed.
- the transparent conductive layer 24 contains indium tin oxide (ITO)
- the positive photosensitive resin composition of the present embodiment is a touch panel manufacturing method in which the transparent conductive layer 24 is changed from ITO to a metal mesh. Also, it can be suitably used.
- FIG. 4 is a top view showing an aspect of the touch panel 100 obtained by using the present invention.
- X electrodes 52 and Y electrodes 54 which are transparent electrodes, are alternately arranged in parallel, and the X electrodes 52 provided in the same row in the longitudinal direction are connected to each other by a single lead wiring 56, The Y electrodes 54 provided in the same row in the width direction are connected to each other by one lead-out wiring 57.
- component (A) As component (A), a modified novolak type phenol resin having an unsaturated hydrocarbon group obtained from cresol subjected to drying oil modification was synthesized.
- Component (B) As a component (B), a novolac type phenol resin obtained from metacresol and paracresol was synthesized.
- Component (C) As the component (C), a novolac type phenol resin obtained from orthocresol was synthesized.
- component (F) component As the component (F), a product name “FC-4430” manufactured by Sumitomo 3M Limited, which is a fluorine-based surfactant, was prepared.
- 3-mercapto-1,2,4-triazole (hereinafter abbreviated as “3MT”) was prepared.
- solvent methyl ethyl ketone (hereinafter abbreviated as “MEK”) and propylene glycol monomethyl ether acetate (hereinafter abbreviated as “PGMEA”) were prepared.
- MEK methyl ethyl ketone
- PGMEA propylene glycol monomethyl ether acetate
- Example 2 to 12 A photosensitive resin composition was prepared in the same manner as in Example 1 except that the component (A), (B), or (E) was changed so that the composition (unit: part by mass) shown in Table 1 was obtained. .
- a photosensitive film was prepared using the photosensitive resin composition according to the following procedure. First, using a spin coater (manufactured by Daitron Technology Co., Ltd.), a PET film “Purex A53” (Teijin) on which one side was release-treated with a silicone compound under the conditions of 300 rpm for 10 seconds and then 500 rpm for 30 seconds. Separation of DuPont Films product name, film thickness 25 ⁇ m, 180 ° peel strength 100 g / inch at 23 ° C.
- the photosensitive layer of the photosensitive film is laminated on the substrate under the conditions of a pressure of 0.5 MPa, an upper and lower roll temperature of 120 ° C., and a speed of 0.5 m / min.
- a positive photoresist laminate was obtained.
- the photosensitive layer was exposed and developed in the order of the following steps 1 to 3.
- the PET film is peeled off from the positive photoresist laminate, and the photosensitive layer is exposed using a UV exposure machine (Dainippon Screen Co., Ltd., trade name “Large Manual Exposure Machine MAP-1200”) at 100 mJ / cm 2. did.
- a glass mask (made by Toppan Printing Co., Ltd., trade name “TOPPAN-TEST-CHART-NO1-N L78I1”) was used for pattern formation.
- a 0.7 mass% KOH (potassium hydroxide) aqueous solution is used as a developing solution, and development is performed for a predetermined time at 25 ° C. with a spray type developing device (trade name “DVW-911” manufactured by Dainippon Screen Co., Ltd.). After washing with distilled water, drying was performed by nitrogen blowing to form a resist film 1.
- Step 2 Half of the resist film 1 remaining in Step 1 was covered with a black sheet, and exposure was performed under the condition of 100 mJ / cm 2 as in Step 1. Using a 0.7 mass% KOH developer, development was performed at 25 ° C. for a predetermined time in the same manner as in Step 1, washed with distilled water, dried by nitrogen blowing, and resist film 2 Formed.
- Step 3 The entire surface of the resist film 2 remaining in Step 2 was exposed under the condition of 100 mJ / cm 2 as in Step 1. Using a 0.7% by mass aqueous KOH solution, development was carried out at 25 ° C. for a predetermined time in the same manner as in Step 1 and washed with distilled water. Thereafter, drying was performed by nitrogen blowing.
- Example 13 The photosensitive resin composition prepared in Example 1 was directly applied to a copper substrate using a spin coater (manufactured by Daitron Technology Co., Ltd.) at 300 rpm for 10 seconds, then at 500 rpm for 30 seconds, and then conveyor-type drying. Drying was performed at 95 ° C. for 5 minutes using a machine (RCP oven line, manufactured by Dainippon Screen Co., Ltd.) to obtain a positive photoresist laminate. Using the obtained positive photoresist laminate, the operations of Steps 1 to 3 were performed to expose and develop the photosensitive layer.
- a spin coater manufactured by Daitron Technology Co., Ltd.
- RCP oven line manufactured by Dainippon Screen Co., Ltd.
- the photosensitive film was wound around a core material having various diameters, and the presence or absence of cracks, peeling and transfer was evaluated in the following five stages.
- E Can be wound on a core material having a diameter of 20 cm.
- the photosensitive layer formed on the support film was laminated on the copper substrate by the method described above, and the adhesion with the substrate was evaluated in the following five stages. Note that the adhesion tendency of the photosensitive layer was the same for gold, palladium, silver, ITO and silica.
- D The area where circular resist chipping occurs after exposure is 25% or more and less than 50% of the entire exposed area.
- Circular resist chipping occurs on the entire exposed area after exposure.
- the developability of the exposed portion of the photosensitive layer in Steps 1 to 3 was evaluated. Specifically, the cutability of the pattern edge portion, the development residue of the solid portion, the adhesion of the peeled piece or the thread-like residue on the substrate was evaluated in five stages using the following criteria.
- the term “edge portion” indicates the end of the adhesion surface between the resist pattern of the unexposed portion and the substrate, and the term “good cut” follows the photomask, and the resist pattern
- the cross-sectional shape of the resist pattern is a rectangle, and the word “bad cutting” indicates that the cross-sectional shape of the resist pattern is not a rectangle.
- B Poor chipperiness at the pattern edge portion, no development residue on the solid portion, no peeled piece, no thread residue.
- C Poor chipperiness at the pattern edge, no development residue on the solid part, no peeling piece, and thread residue.
- D Poor chipperiness at the pattern edge portion, development remaining on the solid portion, no peeling piece, and thread residue.
- E Poor chipperiness at the pattern edge portion, development remaining on the solid portion, peeling pieces, and thread residue.
- Steps 1 and 2 the developer resistance of the unexposed part of the photosensitive layer was evaluated according to the following criteria. Specifically, cracking, film reduction, and surface layer peeling were evaluated in five stages. A: No crack, no film reduction, no peeling of surface layer. B: No crack, no film loss, and surface layer peeling. C: Cracks, no film loss, no peeling of surface layer. D: There is a crack, the film is reduced, and no surface layer is peeled off. E: Cracking, film loss, surface layer peeling.
- Steps 1 and 2 the resist appearance of the unexposed portion of the photosensitive layer was evaluated according to the following criteria. Specifically, the roughness of the surface or the degree of unevenness was evaluated in five stages. A: Good. B: There is roughness. C: There is unevenness. D: There is layer separation or white turbidity. E: The substrate surface is exposed.
- a photosensitive layer that is sufficiently excellent in the developability of the exposed portion and the developer resistance of the unexposed portion and can be repeatedly developed with a weak alkaline developer. It was confirmed that it can be formed.
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Medicinal Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Materials For Photolithography (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
Description
(A)成分は、不飽和炭化水素基を有する変性ノボラック型フェノール樹脂である。ノボラック型フェノール樹脂は、オルトクレゾール、又は、メタクレゾール及びパラクレゾールを主成分として含むフェノール誘導体と、アルデヒド類との重縮合生成物である。重縮合は、酸等の触媒存在下で行われる。不飽和炭化水素基を有する変性フェノール樹脂は、フェノール誘導体と、不飽和炭化水素基を有する化合物(以下、場合により単に「不飽和炭化水素基含有化合物」という。)との反応生成物(以下、「不飽和炭化水素基変性フェノール誘導体」という。)と、アルデヒド類との縮重合生成物であってもよく、フェノール樹脂と不飽和炭化水素基含有化合物との反応生成物であってもよい。
ポンプ:L-6200型(株式会社日立製作所製、商品名)
カラム:TSKgel-G5000HXL(東ソー株式会社製、商品名)
検出器:L-3300RI型(株式会社日立製作所製、商品名)
溶離液:テトラヒドロフラン
温度:30℃
流量:1.0mL/分
(B)成分は、メタクレゾール及びパラクレゾールを主成分として含むフェノール誘導体と、アルデヒド類との重縮合生成物である。重縮合は、酸等の触媒存在下で行われる。(B)成分は、不飽和炭化水素基を有しない未変性のノボラック型フェノール樹脂である。(B)成分を得るために用いられるフェノール誘導体として、メタクレゾール及びパラクレゾール以外のフェノール誘導体を、本発明が奏する効果を損ねない範囲で共重合することができる。(B)成分を得るために用いられるフェノール誘導体の総量を基準として、メタクレゾール及びパラクレゾールの総量が85質量%以上であることが好ましい。
(C)成分は、オルトクレゾールを主成分として含むフェノール誘導体と、アルデヒド類との重縮合生成物である。重縮合は、酸等の触媒存在下で行われる。(C)成分は、不飽和炭化水素基を有しない未変性のノボラック型フェノール樹脂である。
(D)成分である光により酸を発生する化合物は、感光剤として用いられる。このような(D)成分は、光照射により酸を発生させ、光照射した部分のアルカリ水溶液への可溶性を増大させる機能を有する。(D)成分としては、一般に光酸発生剤と称される化合物を用いることができる。(D)成分の具体例としては、o-キノンジアジド化合物、アリールジアゾニウム塩、ジアリールヨードニウム塩、トリアリールスルホニウム塩等が挙げられる。これらの中で、感度が高いことから、1,2-キノンジアジド化合物が好ましい。
(E)成分は、多塩基酸又は多塩基酸無水物である。本実施形態のポジ型感光性樹脂組成物において、(E)成分の含有量は、(A)成分、(B)成分、(C)成分及び(D)成分の総量100質量部に対して、40質量部未満である。
ポジ型感光性樹脂組成物の塗布性、消泡性、レベリング性等を向上させ、かつ、感光性フィルムとした場合の感光層の支持体フィルムからの剥離性を向上する目的で、本実施形態の感光性樹脂組成物は、(F)成分としてフッ素系界面活性剤を含有してもよい。
支持体フィルムへの塗工性、形成した感光層の基材への密着性及び露光後の現像性をより向上する観点から、本実施形態の感光性樹脂組成物は、(G)成分として密着性付与剤を含有してもよい。
本実施形態の感光性樹脂組成物には、必要に応じて、粘度を調整するために後述する溶剤を含有させてもよく、増感剤、吸光剤(染料)、架橋剤、可塑剤、顔料、充填材、難燃剤、安定剤、剥離促進剤、酸化防止剤、香料、イメージング剤、熱架橋剤等の添加剤を含有させてもよい。これらは1種を単独で又は2種以上を組み合わせて用いることができる。これらの添加剤の配合量は、上記感光性樹脂組成物の特性を損なわない範囲であれば特に制限されないが、感光性樹脂組成物全量に対して、50質量%以下であることが好ましい。
本実施形態に係る感光性フィルムは、少なくとも一方の面が離型処理された支持体フィルムと、該支持体フィルムの離型処理面上に設けられた上記ポジ型感光性樹脂組成物から形成された感光層とを備える。感光層の支持体フィルムと反対側の面には、必要に応じて、保護フィルムを積層することができる。
本実施形態に係る支持体フィルム2は、少なくとも一方の面が離型処理されている。ここで、離型処理とは、シリコーン系界面活性剤、シリコーン樹脂等のシリコーン系化合物、フッ素系界面活性剤、フッ素樹脂等のフッ素含有化合物、アルキッド樹脂等の離型剤で支持体フィルムの表面を薄く塗布(コート)する化学処理や、支持体フィルムをコロナ処理する等の物理処理を指す。
保護フィルム6としては、例えば、PET等のポリエステル、ポリプロピレン、ポリエチレン等のポリオレフィンから形成される重合体フィルムを用いることができる。また、支持体フィルムと同様に、離型処理を施した重合体フィルムを用いてもよい。感光性フィルムをロール状に巻き取る際の柔軟性の観点からは、保護フィルム6として、ポリエチレンフィルムが特に好ましい。また、保護フィルム6は、感光層表面の凹みを低減できるよう、低フィッシュアイのフィルムであることが好ましい。
次に、レジストパターンの形成方法について説明する。
アルカリ性水溶液のpHは9~13の範囲とすると好ましく、環境負荷低減の観点からは、pHは9~12の範囲とすると好ましい。その温度は、感光層の現像性に合わせて調整される。また、アルカリ性水溶液中には、界面活性剤、消泡剤、有機溶剤等を混入させてもよい。
本実施形態のポジ型感光性樹脂組成物は、タッチパネルの製造方法に好適に利用できる。本実施形態に係るタッチパネルの製造方法は、上記レジストパターンの形成方法によりレジストパターンが形成された基材を、エッチング処理する工程を有する。エッチング処理は、形成されたレジストパターンをマスクとして、基材の導体層等に対して行われる。エッチング処理により、引き出し配線と透明電極のパターンとを形成することで、タッチパネルが製造される。以下、ネガ型感光性樹脂組成物を用いた場合と対比しながら、本実施形態のポジ型感光性樹脂組成物を用いたタッチパネルの製造方法について説明する。
(A)成分として、乾性油変性を行ったクレゾールから得られる不飽和炭化水素基を有する変性ノボラック型フェノール樹脂を合成した。
メタクレゾール及びパラクレゾールを質量比40:60で混合したクレゾール450質量部に、桐油50質量部を加え撹拌した後、50質量%パラトルエンスルホン酸メタノール溶液を1.12質量部加え、120℃で2時間反応した。反応後、室温(25℃、以下同様)まで冷却し、92%パラホルムアルデヒド75質量部、メタノール18質量部及びシュウ酸2質量部を加え、90℃で3時間撹拌した後、減圧蒸留を行い未反応のクレゾールを除去し、10%桐油変性ノボラック型フェノール樹脂(A1)を得た。(A1)のMwは12000であった。
使用するクレゾールをオルトクレゾールに変更し、メタノールの添加量を128質量部に変更した以外は、合成例A1と同様に操作して、10%桐油変性ノボラック型フェノール樹脂(A2)を得た。(A2)のMwは2000であった。
(B)成分として、メタクレゾール及びパラクレゾールから得られるノボラック型フェノール樹脂を合成した。
メタクレゾール及びパラクレゾールを質量比40:60で混合したクレゾール500質量部に、92%パラホルムアルデヒド83質量部、メタノール18質量部及びシュウ酸1質量部を加え、90℃で3時間撹拌した後、減圧蒸留を行い未反応のクレゾールを除去し、メタクレゾール及びパラクレゾールから得られるノボラック型フェノール樹脂(B1)を得た。(B1)のMwは12000であった。
メタノール添加量を130質量部に変更した以外は、B1と同様に操作して、メタクレゾール及びパラクレゾールから得られるノボラック型フェノール樹脂(B2)を得た。(B2)のMwは1000であった。
(C)成分として、オルトクレゾールから得られるノボラック型フェノール樹脂を合成した。
オルトクレゾール336質量部に92%パラホルムアルデヒド60質量部及びシュウ酸1.2質量部を加え、120℃で4時間撹拌した後、減圧蒸留を行い未反応のオルトクレゾールを除去し、オルトクレゾールから得られるノボラック型フェノール樹脂(C1)を得た。(C1)のMwは1000であった。
(E)成分として、コハク酸、無水マレイン酸、無水フタル酸、無水トリメリット酸及び無水ピロメリット酸を準備した。
(F)成分として、フッ素系界面活性剤である、住友スリーエム株式会社製の商品名「FC-4430」を準備した。
(G)成分として、3-メルカプト-1,2,4-トリアゾール(以下、「3MT」と略記する)を準備した。
溶媒として、メチルエチルケトン(以下、「MEK」と略記する)及びプロピレングリコールモノメチルエーテルアセテート(以下、「PGMEA」と略記する)を準備した。
(実施例1)
(A)成分として(A1)20質量部、(B)成分として(B1)20質量部、(C)成分として(C1)45質量部、(D)成分として「PA-28」15質量部、(E)成分としてコハク酸30質量部、(F)成分として「FC-4430」0.5質量部、(G)成分として、「3MT」0.3質量部、溶媒として「MEK」140質量部及び「PGMEA」90質量部を混合し、感光性樹脂組成物を調製した。
表1に示す組成(単位:質量部)となるように、(A)、(B)又は(E)成分を変更した以外は、実施例1と同様にして、感光性樹脂組成物を調製した。
ポリヒドロキシスチレンである、丸善石油化学株式会社製の商品名「マルカリンカーM」(Mw18000)を準備した。
表2に示した組成(単位:質量部)に変更した以外は実施例1と同様にして、感光性樹脂組成物を作製した。
(実施例1~12及び比較例1~4)
上記感光性樹脂組成物を用い、以下の手順に従って感光性フィルムを作製した。まず、スピンコーター(ダイトロンテクノロジー株式会社製)を用いて、300rpmで10秒間、次いで500rpmで30秒間の条件で、片面がシリコーン系化合物で離型処理されたPETフィルム「ピューレックス A53」(帝人デュポンフィルム社製商品名、膜厚25μm、日東電工株式会社製の粘着テープ「NITTO31B」を用いた23℃での180°剥離強度100g/インチ、離型処理面の表面張力44mN/m)の離型処理面に感光性樹脂組成物を塗布した。次いで、コンベア式乾燥機(RCPオーブンライン、大日本スクリーン株式会社製)にて、95℃で5分間乾燥を行い、厚み4.0μmの感光層を形成した感光性フィルムを作製した。
ポジ型フォトレジスト積層体からPETフィルムを剥がし、UV露光機(大日本スクリーン株式会社製、商品名「大型マニュアル露光機 MAP-1200」)を用いて100mJ/cm2の条件で、感光層を露光した。パターン形成にはガラスマスク(凸版印刷株式会社製、商品名「TOPPAN-TEST-CHART-NO1-N L78I1」)を用いた。次いで、現像液として、0.7質量%のKOH(水酸化カリウム)水溶液を用い、スプレー式現像装置(大日本スクリーン株式会社製、商品名「DVW-911」)で、25℃で所定時間現像を行い、蒸留水で洗浄した後、窒素ブローにて乾燥を行い、レジスト膜1を形成した。
工程1で残存しているレジスト膜1の半分をブラックシートで覆い、工程1と同様に100mJ/cm2の条件で露光を行った。0.7質量%のKOH現像液を用いて、工程1と同様にスプレー現像機にて25℃で所定の時間現像し、蒸留水で洗浄した後、窒素ブローにて乾燥を行い、レジスト膜2を形成した。
工程2で残存しているレジスト膜2の全面を、工程1と同様に100mJ/cm2の条件で露光を行った。0.7質量%のKOH水溶液を用いて、工程1と同様にスプレー現像機にて25℃で所定の時間現像し、蒸留水で洗浄した。その後、窒素ブローにて乾燥を行った。
実施例1で調製した感光性樹脂組成物をスピンコーター(ダイトロンテクノロジー株式会社製)を用いて、300rpmで10秒間、次いで500rpmで30秒間の条件で、銅基板に直接塗布し、コンベア式乾燥機(RCPオーブンライン,大日本スクリーン株式会社製)にて、95℃で5分間乾燥を行い、ポジ型フォトレジスト積層体を得た。得られたポジ型フォトレジスト積層体を用いて、上記工程1~3の操作を行い、感光層を露光・現像した。
支持体フィルム上に形成した感光層の可とう性、密着性と、工程1~3における感光層の繰り返し現像性とを以下の基準で評価した。結果を表3及び表4に示す。
支持体フィルム上に形成した感光層の可とう性は、種々の直径を有するコア材に感光性フィルムを巻き取り、クラック、剥離、転写の有無を以下の五段階で評価した。
A:直径1cmコア材に巻き取り可能。
B:直径3cmコア材に巻き取り可能。
C:直径5cmコア材に巻き取り可能。
D:直径10cmコア材に巻き取り可能。
E:直径20cmコア材に巻き取り可能。
銅基板上に、支持体フィルム上に形成した感光層を前述の方法でラミネートし、基板との密着性を以下の五段階で評価した。なお、金、パラジウム、銀、ITO及びシリカに対しても、感光層の密着性の傾向は同じであった。
A:露光後に円形のレジスト欠けが発生しない。
B:露光後に円形のレジスト欠けが発生する面積が、露光部全体の10%未満。
C:露光後に円形のレジスト欠けが発生する面積が、露光部全体の10%以上25%未満。
D:露光後に円形のレジスト欠けが発生する面積が、露光部全体の25%以上50%未満。
E:露光後に、露光部の全面に円形のレジスト欠けが発生する。
工程1~3における感光層の露光部の現像性を評価した。具体的には、パターンエッジ部分の切れ性、ベタ部分の現像残り、剥離片又は糸状の残渣の基板上への付着を以下の基準を用いて五段階で評価した。なお、「エッジ部分」との語は、未露光部のレジストパターンと基板との接着面の端部を示し、「切れ性良好」との語は、フォトマスクに追従した形であり、レジストパターンの断面形状が矩形であることを示し、「切れ性不良」との語は、レジストパターンの断面形状が矩形ではないことを示す。
A:パターンエッジ部のきれ性良好、ベタ部に現像残り無し、剥離片無し、糸状残渣無し。
B:パターンエッジ部のきれ性不良、ベタ部に現像残り無し、剥離片無し、糸状残渣無し。
C:パターンエッジ部のきれ性不良、ベタ部に現像残り無し、剥離片無し、糸状残渣あり。
D:パターンエッジ部のきれ性不良、ベタ部に現像残りあり、剥離片無し、糸状残渣あり。
E:パターンエッジ部のきれ性不良、ベタ部に現像残りあり、剥離片あり、糸状残渣あり。
工程1及び2において、感光層の未露光部の耐現像液性を以下の基準で評価した。具体的には、クラック、膜減り、表層の剥離を五段階で評価した。
A:クラック無し、膜減り無し、表層の剥離無し。
B:クラック無し、膜減り無し、表層の剥離あり。
C:クラックあり、膜減り無し、表層の剥離無し。
D:クラックあり、膜減りあり、表層の剥離無し。
E:クラックあり、膜減りあり、表層の剥離あり。
工程1及び2では、感光層の未露光部についてのレジスト外観を以下の基準で評価した。具体的には、表面のざらつき又は凹凸の程度を五段階で評価した。
A:良好。
B:ざらつきあり。
C:凹凸あり。
D:層分離、もしくは白濁あり。
E:基板表面の露出あり。
Claims (9)
- (A)不飽和炭化水素基を有する変性ノボラック型フェノール樹脂、
(B)メタクレゾール及びパラクレゾールから得られるノボラック型フェノール樹脂、
(C)オルトクレゾールから得られるノボラック型フェノール樹脂、
(D)光により酸を発生する化合物、及び、
(E)多塩基酸又は多塩基酸無水物
を含有し、
前記(E)成分の含有量が、前記(A)成分、前記(B)成分、前記(C)成分及び前記(D)成分の総量100質量部に対して、40質量部未満である、ポジ型感光性樹脂組成物。 - 前記(A)成分の重量平均分子量が、1000~15000である、請求項1に記載のポジ型感光性樹脂組成物。
- 前記(B)成分の重量平均分子量が、800~50000である、請求項1又は2に記載のポジ型感光性樹脂組成物。
- 前記(C)成分の重量平均分子量が、800~5000である、請求項1~3のいずれか一項に記載のポジ型感光性樹脂組成物。
- 前記(C)成分の含有量が、前記(A)成分、前記(B)成分、前記(C)成分及び前記(D)成分の総量100質量部に対して20~60質量部である、請求項1~4のいずれか一項に記載のポジ型感光性樹脂組成物。
- 前記不飽和炭化水素基の炭素数が4~100である、請求項1~5のいずれか一項に記載のポジ型感光性樹脂組成物。
- (F)フッ素系界面活性剤を更に含有する、請求項1~6のいずれか一項に記載のポジ型感光性樹脂組成物。
- (G)密着性付与剤を更に含有する、請求項1~7のいずれか一項に記載のポジ型感光性樹脂組成物。
- 少なくとも一方の面が離型処理された支持体フィルムと、前記支持体フィルムの離型処理面上に設けられた感光層と、を備える感光性フィルムであって、
前記感光層が、請求項1~8のいずれか一項に記載のポジ型感光性樹脂組成物から形成された層である、感光性フィルム。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014552008A JP6323337B2 (ja) | 2012-12-12 | 2013-12-05 | 感光性樹脂組成物及びこれを用いた感光性フィルム |
KR1020157009562A KR20150096372A (ko) | 2012-12-12 | 2013-12-05 | 감광성 수지 조성물 및 이것을 사용한 감광성 필름 |
EP13862803.7A EP2937731A4 (en) | 2012-12-12 | 2013-12-05 | PHOTOSENSITIVE RESIN COMPOSITION AND PHOTOSENSITIVE FILM USING THE SAME |
US14/651,081 US9403977B2 (en) | 2012-12-12 | 2013-12-05 | Photosensitive resin composition and photosensitive film using same |
CN201380064222.3A CN104871088A (zh) | 2012-12-12 | 2013-12-05 | 感光性树脂组合物以及使用其的感光性膜 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012-271369 | 2012-12-12 | ||
JP2012271369 | 2012-12-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2014091997A1 true WO2014091997A1 (ja) | 2014-06-19 |
Family
ID=50934289
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2013/082703 WO2014091997A1 (ja) | 2012-12-12 | 2013-12-05 | 感光性樹脂組成物及びこれを用いた感光性フィルム |
Country Status (7)
Country | Link |
---|---|
US (1) | US9403977B2 (ja) |
EP (1) | EP2937731A4 (ja) |
JP (1) | JP6323337B2 (ja) |
KR (1) | KR20150096372A (ja) |
CN (1) | CN104871088A (ja) |
TW (1) | TWI610137B (ja) |
WO (1) | WO2014091997A1 (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014178471A (ja) * | 2013-03-14 | 2014-09-25 | Asahi Kasei E-Materials Corp | 感光性樹脂組成物、硬化レリーフパターンの製造方法、半導体装置及び表示体装置 |
WO2017057616A1 (ja) * | 2015-09-30 | 2017-04-06 | 富士フイルム株式会社 | ドライフィルムレジスト、回路配線の製造方法、回路配線、入力装置および表示装置 |
JP2017078852A (ja) * | 2015-10-21 | 2017-04-27 | 富士フイルム株式会社 | ドライフィルムレジスト、回路配線の製造方法、回路配線、入力装置および表示装置 |
JP2020020978A (ja) * | 2018-08-01 | 2020-02-06 | 旭化成株式会社 | 感光性樹脂組成物及びそれを用いた感光性樹脂積層体 |
JP2020098241A (ja) * | 2018-12-17 | 2020-06-25 | 旭化成株式会社 | 感光性樹脂組成物及びそれを用いた感光性樹脂積層体 |
JP2020098244A (ja) * | 2018-12-17 | 2020-06-25 | 旭化成株式会社 | 感光性樹脂積層体及びレジストパターンの製造方法 |
TWI705307B (zh) * | 2015-07-30 | 2020-09-21 | 日商日立化成股份有限公司 | 感光性元件、阻障層形成用樹脂組成物、抗蝕劑圖案的形成方法及印刷配線板的製造方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6923334B2 (ja) * | 2016-04-14 | 2021-08-18 | 旭化成株式会社 | 感光性樹脂組成物及び硬化レリーフパターンの製造方法 |
JP7002966B2 (ja) * | 2018-03-12 | 2022-01-20 | 東京応化工業株式会社 | 化学増幅型ポジ型感光性樹脂組成物、鋳型付き基板の製造方法、及びめっき造形物の製造方法 |
TWI678596B (zh) * | 2018-09-13 | 2019-12-01 | 新應材股份有限公司 | 正型光阻組成物及圖案化聚醯亞胺層之形成方法 |
Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03208055A (ja) * | 1990-01-11 | 1991-09-11 | Tokyo Ohka Kogyo Co Ltd | ポジ型ホトレジスト組成物 |
JPH03225341A (ja) * | 1990-01-31 | 1991-10-04 | Konica Corp | 感光性組成物 |
JPH03236216A (ja) * | 1990-02-14 | 1991-10-22 | Toshiba Corp | 半導体装置の製造方法 |
JPH0627657A (ja) | 1992-07-10 | 1994-02-04 | Tokyo Ohka Kogyo Co Ltd | ポジ型ホトレジスト組成物 |
JPH09160232A (ja) * | 1995-12-11 | 1997-06-20 | Fuji Photo Film Co Ltd | ポジ型フォトレジスト組成物 |
JP2000105466A (ja) | 1998-09-29 | 2000-04-11 | Clariant (Japan) Kk | 微細レジストパターン形成方法 |
WO2007026475A1 (ja) | 2005-08-30 | 2007-03-08 | Hitachi Chemical Company, Ltd. | 感光性樹脂組成物及び感光性エレメント |
JP2007316577A (ja) | 2006-04-26 | 2007-12-06 | Hitachi Chem Co Ltd | 感光性樹脂組成物及び感光性エレメント |
JP2008112134A (ja) | 2006-10-06 | 2008-05-15 | Hitachi Chem Co Ltd | 電極パターンの形成方法 |
JP2010039237A (ja) * | 2008-08-06 | 2010-02-18 | Sumitomo Bakelite Co Ltd | フォトレジスト用樹脂組成物 |
JP2010039214A (ja) | 2008-08-05 | 2010-02-18 | Hitachi Chem Co Ltd | 感光性樹脂組成物及びこれを用いた感光性エレメント |
JP2010145604A (ja) * | 2008-12-17 | 2010-07-01 | Hitachi Chem Co Ltd | ポジ型感光性樹脂組成物及びそれを用いたバンプの製造方法 |
WO2012063635A1 (ja) * | 2010-11-10 | 2012-05-18 | Dic株式会社 | ポジ型フォトレジスト組成物 |
JP2012252095A (ja) * | 2011-06-01 | 2012-12-20 | Hitachi Chem Co Ltd | ポジ型感光性樹脂組成物及び感光性フィルム |
JP2013228416A (ja) * | 2012-04-24 | 2013-11-07 | Hitachi Chemical Co Ltd | ポジ型感光性樹脂組成物及びこれを用いた感光性フィルム |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0360232A (ja) | 1989-07-28 | 1991-03-15 | Nec Corp | 補助信号伝送方式 |
JP5447384B2 (ja) | 2008-09-04 | 2014-03-19 | 日立化成株式会社 | ポジ型感光性樹脂組成物、レジストパターンの製造方法及び電子部品 |
CN102257431B (zh) * | 2008-12-26 | 2013-06-26 | 日立化成株式会社 | 正型感光性树脂组合物、抗蚀图形的制造方法、半导体装置以及电子器件 |
KR20110045418A (ko) | 2009-10-27 | 2011-05-04 | 삼성전자주식회사 | 포토레지스트 조성물 및 이를 이용한 표시 기판의 제조 방법 |
-
2013
- 2013-12-05 US US14/651,081 patent/US9403977B2/en not_active Expired - Fee Related
- 2013-12-05 EP EP13862803.7A patent/EP2937731A4/en not_active Withdrawn
- 2013-12-05 JP JP2014552008A patent/JP6323337B2/ja active Active
- 2013-12-05 WO PCT/JP2013/082703 patent/WO2014091997A1/ja active Application Filing
- 2013-12-05 CN CN201380064222.3A patent/CN104871088A/zh active Pending
- 2013-12-05 KR KR1020157009562A patent/KR20150096372A/ko not_active Application Discontinuation
- 2013-12-12 TW TW102145891A patent/TWI610137B/zh not_active IP Right Cessation
Patent Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03208055A (ja) * | 1990-01-11 | 1991-09-11 | Tokyo Ohka Kogyo Co Ltd | ポジ型ホトレジスト組成物 |
JPH03225341A (ja) * | 1990-01-31 | 1991-10-04 | Konica Corp | 感光性組成物 |
JPH03236216A (ja) * | 1990-02-14 | 1991-10-22 | Toshiba Corp | 半導体装置の製造方法 |
JPH0627657A (ja) | 1992-07-10 | 1994-02-04 | Tokyo Ohka Kogyo Co Ltd | ポジ型ホトレジスト組成物 |
JPH09160232A (ja) * | 1995-12-11 | 1997-06-20 | Fuji Photo Film Co Ltd | ポジ型フォトレジスト組成物 |
JP2000105466A (ja) | 1998-09-29 | 2000-04-11 | Clariant (Japan) Kk | 微細レジストパターン形成方法 |
WO2007026475A1 (ja) | 2005-08-30 | 2007-03-08 | Hitachi Chemical Company, Ltd. | 感光性樹脂組成物及び感光性エレメント |
JP2007316577A (ja) | 2006-04-26 | 2007-12-06 | Hitachi Chem Co Ltd | 感光性樹脂組成物及び感光性エレメント |
JP2008112134A (ja) | 2006-10-06 | 2008-05-15 | Hitachi Chem Co Ltd | 電極パターンの形成方法 |
JP2010039214A (ja) | 2008-08-05 | 2010-02-18 | Hitachi Chem Co Ltd | 感光性樹脂組成物及びこれを用いた感光性エレメント |
JP2010039237A (ja) * | 2008-08-06 | 2010-02-18 | Sumitomo Bakelite Co Ltd | フォトレジスト用樹脂組成物 |
JP2010145604A (ja) * | 2008-12-17 | 2010-07-01 | Hitachi Chem Co Ltd | ポジ型感光性樹脂組成物及びそれを用いたバンプの製造方法 |
WO2012063635A1 (ja) * | 2010-11-10 | 2012-05-18 | Dic株式会社 | ポジ型フォトレジスト組成物 |
JP2012252095A (ja) * | 2011-06-01 | 2012-12-20 | Hitachi Chem Co Ltd | ポジ型感光性樹脂組成物及び感光性フィルム |
JP2013228416A (ja) * | 2012-04-24 | 2013-11-07 | Hitachi Chemical Co Ltd | ポジ型感光性樹脂組成物及びこれを用いた感光性フィルム |
Non-Patent Citations (1)
Title |
---|
See also references of EP2937731A4 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014178471A (ja) * | 2013-03-14 | 2014-09-25 | Asahi Kasei E-Materials Corp | 感光性樹脂組成物、硬化レリーフパターンの製造方法、半導体装置及び表示体装置 |
TWI705307B (zh) * | 2015-07-30 | 2020-09-21 | 日商日立化成股份有限公司 | 感光性元件、阻障層形成用樹脂組成物、抗蝕劑圖案的形成方法及印刷配線板的製造方法 |
WO2017057616A1 (ja) * | 2015-09-30 | 2017-04-06 | 富士フイルム株式会社 | ドライフィルムレジスト、回路配線の製造方法、回路配線、入力装置および表示装置 |
JPWO2017057616A1 (ja) * | 2015-09-30 | 2018-07-05 | 富士フイルム株式会社 | ドライフィルムレジスト、回路配線の製造方法、回路配線、入力装置および表示装置 |
JP2017078852A (ja) * | 2015-10-21 | 2017-04-27 | 富士フイルム株式会社 | ドライフィルムレジスト、回路配線の製造方法、回路配線、入力装置および表示装置 |
JP2020020978A (ja) * | 2018-08-01 | 2020-02-06 | 旭化成株式会社 | 感光性樹脂組成物及びそれを用いた感光性樹脂積層体 |
JP7076329B2 (ja) | 2018-08-01 | 2022-05-27 | 旭化成株式会社 | 感光性樹脂組成物及びそれを用いた感光性樹脂積層体 |
JP2020098241A (ja) * | 2018-12-17 | 2020-06-25 | 旭化成株式会社 | 感光性樹脂組成物及びそれを用いた感光性樹脂積層体 |
JP2020098244A (ja) * | 2018-12-17 | 2020-06-25 | 旭化成株式会社 | 感光性樹脂積層体及びレジストパターンの製造方法 |
JP7340329B2 (ja) | 2018-12-17 | 2023-09-07 | 旭化成株式会社 | 感光性樹脂積層体及びレジストパターンの製造方法 |
JP7376989B2 (ja) | 2018-12-17 | 2023-11-09 | 旭化成株式会社 | 感光性樹脂組成物及びそれを用いた感光性樹脂積層体 |
Also Published As
Publication number | Publication date |
---|---|
CN104871088A (zh) | 2015-08-26 |
US9403977B2 (en) | 2016-08-02 |
EP2937731A4 (en) | 2016-06-15 |
EP2937731A1 (en) | 2015-10-28 |
JPWO2014091997A1 (ja) | 2017-01-12 |
TWI610137B (zh) | 2018-01-01 |
JP6323337B2 (ja) | 2018-05-16 |
US20150315379A1 (en) | 2015-11-05 |
TW201428428A (zh) | 2014-07-16 |
KR20150096372A (ko) | 2015-08-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6323337B2 (ja) | 感光性樹脂組成物及びこれを用いた感光性フィルム | |
JP6177495B2 (ja) | ポジ型感光性樹脂組成物及び感光性フィルム | |
JP4600477B2 (ja) | 感光性樹脂組成物及び感光性エレメント | |
JP2015135481A (ja) | 感光性樹脂組成物、これを用いた感光性エレメント、レジストパターンの形成方法及びタッチパネルの製造方法 | |
JP5155389B2 (ja) | 感光性樹脂組成物及びそれを用いた感光性樹脂積層体 | |
JP4840068B2 (ja) | 感光性樹脂組成物及び感光性エレメント | |
JP5741179B2 (ja) | 感光性フィルム | |
JP2013228416A (ja) | ポジ型感光性樹脂組成物及びこれを用いた感光性フィルム | |
JP6561489B2 (ja) | 感光性樹脂組成物及びこれを用いた感光性エレメント | |
JP5076611B2 (ja) | 電極パターンの形成方法 | |
JP6135743B2 (ja) | ポジ型感光性樹脂組成物及び感光性フィルム | |
JP7340329B2 (ja) | 感光性樹脂積層体及びレジストパターンの製造方法 | |
JP2010039214A (ja) | 感光性樹脂組成物及びこれを用いた感光性エレメント | |
JP7076329B2 (ja) | 感光性樹脂組成物及びそれを用いた感光性樹脂積層体 | |
JP7376989B2 (ja) | 感光性樹脂組成物及びそれを用いた感光性樹脂積層体 | |
JP7340328B2 (ja) | 感光性樹脂組成物 | |
JP6569250B2 (ja) | ポジ型感光性樹脂組成物、感光性エレメント、及びレジストパターンを形成する方法 | |
JP2005037712A (ja) | パターン化されたレジスト膜の製造方法、レジスト膜形成済回路形成用基板、及びプリント配線板の製造方法 | |
JP2016166995A (ja) | ガラスの加工方法、タッチパネルの製造方法、及びタッチパネル。 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 13862803 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2014552008 Country of ref document: JP Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 20157009562 Country of ref document: KR Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14651081 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2013862803 Country of ref document: EP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |