WO2014091714A1 - Capteur magnétique, et dispositif ainsi que procédé de capteur magnétique - Google Patents

Capteur magnétique, et dispositif ainsi que procédé de capteur magnétique Download PDF

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Publication number
WO2014091714A1
WO2014091714A1 PCT/JP2013/007097 JP2013007097W WO2014091714A1 WO 2014091714 A1 WO2014091714 A1 WO 2014091714A1 JP 2013007097 W JP2013007097 W JP 2013007097W WO 2014091714 A1 WO2014091714 A1 WO 2014091714A1
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Prior art keywords
magnetic sensor
pellet
lead terminal
lead
insulating layer
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PCT/JP2013/007097
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English (en)
Japanese (ja)
Inventor
敏昭 福中
長谷川　秀則
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旭化成エレクトロニクス株式会社
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Application filed by 旭化成エレクトロニクス株式会社 filed Critical 旭化成エレクトロニクス株式会社
Priority to KR1020167011246A priority Critical patent/KR20160052798A/ko
Priority to CN201380012069.XA priority patent/CN104170109B/zh
Priority to KR1020147020169A priority patent/KR20140113964A/ko
Priority to JP2014529369A priority patent/JP5676826B2/ja
Publication of WO2014091714A1 publication Critical patent/WO2014091714A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0005—Geometrical arrangement of magnetic sensor elements; Apparatus combining different magnetic sensor types
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0052—Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
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    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582—Metallic layers on lead frames
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    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/80—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
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    • H01L2224/73265—Layer and wire connectors
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18165—Exposing the passive side of the semiconductor or solid-state body of a wire bonded chip

Definitions

  • the present invention relates to a magnetic sensor, a magnetic sensor device, and a method for manufacturing a magnetic sensor, and more particularly, a magnetic sensor, a magnetic sensor device, and a magnetic sensor that can prevent an increase in leakage current even when the pellet is reduced in size and thickness. Regarding the method.
  • Patent Document 1 discloses a magnetic sensor including a lead frame, a pellet (that is, a magnetic sensor chip), and a thin metal wire.
  • the lead frame has terminals arranged at the four corners to obtain electrical connection with the outside, and the pellet is mounted on the island of the lead frame.
  • the electrode which a pellet has and each terminal which a lead frame has are connected with the metal fine wire.
  • the size of the magnetic sensor after packaging (that is, the package size) is 1.6 mm in length, 0.8 mm in width, and 0.38 mm in thickness. Further, the package size can be reduced to 0.30 mm by further thinning the pellet.
  • a structure in which an island is omitted that is, an islandless structure
  • FIG. 10A and 10B are a configuration diagram of a magnetic sensor 400 according to a comparative embodiment of the present invention and a conceptual diagram for explaining the problem.
  • the pellet 310 is fixed by a mold resin 350.
  • the island-less structure magnetic sensor 310 is attached to the wiring board 450, the back surface of each lead terminal of the lead frame 320 exposed from the mold resin 350 is connected to the wiring board 450 via solder (solder) 370. Connect to wiring pattern 451.
  • solder solder
  • the contact surface becomes a Schottky junction between the semiconductor and the metal.
  • the lead terminal 325 is a terminal connected to a power source (that is, a power terminal)
  • the solder 370 protruding from the bottom of the power terminal 325 contacts the back surface of the pellet 310
  • a forward bias is applied to the Schottky junction.
  • the semiconductor for example, GaAs
  • the pellet 310 is semi-insulating ( ⁇ very high resistance)
  • a forward bias is applied to the Schottky junction. Almost no current flowed when applied.
  • an object of the present invention is to provide a magnetic sensor, a magnetic sensor device, and a method for manufacturing the magnetic sensor that can prevent an increase in leakage current.
  • a magnetic sensor includes a pellet, a plurality of lead terminals arranged around the pellet, a plurality of electrode portions included in the pellet, and the plurality of lead terminals.
  • a plurality of conductive wires that electrically connect each of the plurality of conductive wires, an insulating layer that covers a surface of the pellet opposite to the surface having the plurality of electrode portions, and a resin member that covers the pellet and the plurality of conductive wires.
  • the insulating layer and the resin member are made of different materials (for example, the components contained are different, or the content ratios are different even if the components contained are the same).
  • the insulating layer may be in contact with the surface of the pellet opposite to the surface having the plurality of electrode portions.
  • the resin member may be a mold resin that seals the pellet, the plurality of conductive wires, and a surface of each of the plurality of lead terminals connected to the conductive wires.
  • the plurality of lead terminals include a first lead terminal, a second lead terminal facing the first lead terminal across the pellet, a third lead terminal, You may have a 4th lead terminal facing the said 3rd lead terminal on both sides of the said pellet.
  • the pellet may include a magnetoelectric conversion element.
  • the first lead terminal is a power supply lead terminal that supplies a predetermined voltage to the magnetoelectric conversion element, and the second lead terminal supplies a ground potential to the magnetoelectric conversion element.
  • the third lead terminal and the fourth lead terminal may be signal lead terminals for extracting a Hall electromotive force signal of the magnetoelectric transducer.
  • the insulating layer may include a thermosetting resin.
  • the insulating layer may further include an ultraviolet curable resin.
  • a thickness of a portion of the insulating layer that covers the opposite surface of the pellet may be at least 2 ⁇ m or more.
  • a magnetic sensor device electrically connects the magnetic sensor, a wiring board to which the magnetic sensor is mounted, and the plurality of lead terminals provided in the magnetic sensor to a wiring pattern of the wiring board. Solder.
  • a method of manufacturing a magnetic sensor according to one aspect of the present invention includes a step of preparing a lead frame in which a plurality of lead terminals are formed on one surface of a substrate, and the plurality of lead terminals on one surface of the substrate.
  • a step of placing a pellet in an area surrounded by an insulating layer, a step of electrically connecting a plurality of electrode portions of the pellet and the plurality of lead terminals with a plurality of conductive wires, and the base A step of sealing the surface of the material on which the pellets are placed with a resin member, and a step of separating the base material from the resin member and the insulating layer, The insulating layer is left on the surface of the pellet opposite to the surface having the plurality of electrode portions.
  • the manufacturing method of said magnetic sensor after the process of isolate
  • the back surface of the pellet is covered with the insulating layer.
  • a Schottky junction is formed between the pellet (semiconductor) and the solder (metal) even when, for example, the solder protrudes from under the power supply terminal to below the pellet. It is possible to prevent current from flowing in the forward direction of the Schottky junction (that is, the direction from the metal to the semiconductor). Therefore, even when the pellet is thinned in the islandless structure magnetic sensor, an increase in leakage current can be prevented.
  • the figure which shows the structural example of the magnetic sensor 100 which concerns on 1st Embodiment of this invention The figure shown in order of the process which shows the manufacturing method of the magnetic sensor 100.
  • FIG. The figure shown in order of the process which shows the manufacturing method of the magnetic sensor 100.
  • FIG. The figure which shows the structural example of the magnetic sensor apparatus 200 which concerns on 1st Embodiment of this invention.
  • the magnetic sensor according to the present embodiment includes a pellet, a plurality of lead terminals arranged around the pellet, a plurality of lead wires that electrically connect the plurality of electrode portions of the pellet and the plurality of lead terminals, respectively. And an insulating layer that covers at least a part of the surface of the pellet opposite to the surface having the plurality of electrode portions, and a resin member that covers the pellet and the plurality of conductive wires, and at least the insulating layer A part and at least a part of the surface of the plurality of lead terminals opposite to the surface connected to the conducting wire are exposed from the resin member.
  • the insulating layer include an insulating resin layer and an insulating sheet.
  • the insulating layer may have a resistance higher than that of the pellet.
  • the volume resistivity of the insulating layer is preferably 10 8 to 10 20 ( ⁇ ⁇ cm). More preferably, the volume resistivity of the insulating layer is 10 10 to 10 18 ( ⁇ ⁇ cm).
  • the resistance of the insulating layer is 10 10 to 10 18 ( ⁇ )
  • the resistance of the pellet is usually about 10 9 ⁇ or less. There is.
  • FIGS. 1A to 1D are a cross-sectional view, a plan view, a bottom view, and an external view showing a configuration example of the magnetic sensor 100 according to the first embodiment of the present invention.
  • FIG. 1A shows a cross section of FIG. 1B cut along a broken line AA ′.
  • the mold resin (resin member) is omitted. As shown in FIGS.
  • the magnetic sensor 100 includes a pellet (that is, a magnetic sensor chip) 10, a lead terminal 20, a plurality of fine metal wires 31 to 34, an insulating paste 40, a mold, and the like. A resin 50 and an exterior plating layer 60 are provided.
  • the lead terminal 20 has a plurality of lead terminals 22 to 25.
  • the pellet 10 is a magnetoelectric conversion element such as a Hall element.
  • the pellet 10 is electrically connected to, for example, a semi-insulating gallium arsenide (GaAs) substrate 11, an active layer (that is, a sensing part) 12 made of a semiconductor thin film formed on the GaAs substrate 11, and the active layer 12. And electrodes 13a to 13d to be connected.
  • the active layer 12 has, for example, a cross shape in plan view, and electrodes 13a to 13d are provided on the four tip portions of the cross, respectively.
  • a pair of electrodes 13a and 13c facing each other in plan view are input terminals for flowing current to the Hall element, and another pair of electrodes 13b and 13d facing each other in a direction orthogonal to the line connecting the electrodes 13a and 13c in plan view are holes. This is an output terminal for outputting a voltage from the element.
  • the thickness of the pellet 10 is, for example, 0.10 mm or less.
  • the magnetic sensor 100 has an islandless structure and has a plurality of lead terminals 22 to 25 for obtaining an electrical connection with the outside.
  • the lead terminals 22 to 25 are arranged around the pellet 10 (for example, near the four corners of the magnetic sensor 100).
  • the lead terminal 22 and the lead terminal 24 are disposed so as to face each other with the pellet 10 interposed therebetween.
  • the lead terminal 23 and the lead terminal 25 are arranged so as to face each other with the pellet 10 interposed therebetween.
  • the lead terminals 22 to 25 are arranged so that a straight line (imaginary line) connecting the lead terminal 22 and the lead terminal 24 and a straight line connecting the lead terminal 23 and the lead terminal 25 (virtual line) intersect each other in plan view.
  • the lead terminal 20 (lead terminals 22 to 25) is made of a metal such as copper (Cu), for example. Further, the lead terminal 20 may be etched (that is, half-etched) on a part of the surface side or the back surface thereof.
  • the front and back surfaces of the lead terminal 20 may be plated with nickel (Ni) -palladium (Pd) -gold (Au) or the like instead of the exterior plating layer 60.
  • Ni nickel
  • Pd palladium
  • Au gold
  • the fine metal wires 31 to 34 are conductive wires that electrically connect the electrodes 13a to 13d of the pellet 10 and the lead terminals 22 to 25, respectively, and are made of, for example, gold (Au). As shown in FIG. 1B, the fine metal wire 31 connects the lead terminal 22 and the electrode 13a, and the fine metal wire 32 connects the lead terminal 23 and the electrode 13b. Further, the fine metal wire 33 connects the lead terminal 24 and the electrode 13c, and the fine metal wire 34 connects the lead terminal 25 and the electrode 13d.
  • the insulating paste 40 includes, for example, an epoxy thermosetting resin as its components and silica (SiO 2 ) as a filler.
  • the insulating paste 40 is in contact with the back surface of the pellet 10 (that is, the surface opposite to the surface having the active layer 12 (that is, the surface having the electrode portions 13a to 13d)).
  • the back surface of the pellet 10 is covered.
  • the thickness of the portion of the insulating paste 40 covering the back surface of the pellet 10 is determined by the filler size and is, for example, 5 ⁇ m or more.
  • the mold resin 50 covers and protects (that is, resin-encapsulates) the pellet 10, at least the surface side of the lead terminal 20 (that is, the surface connected to the fine metal wire), and the fine metal wires 31 to 34. .
  • the mold resin 50 is made of, for example, an epoxy-based thermosetting resin, and can withstand high heat during reflow.
  • the mold resin 50 and the insulating paste 40 are different from each other even in the case of, for example, the same epoxy-based thermosetting resin (for example, the components contained are different or the components contained are the same). The ratio is different.) As shown in FIGS.
  • the exterior plating layer 60 is formed on the back surfaces of the lead terminals 22 to 25 exposed from the mold resin 50.
  • the exterior plating layer 60 is made of, for example, tin (Sn).
  • the lead terminal 24 is a ground lead terminal that supplies a ground potential to the pellet 10.
  • the lead terminals 23 and 25 are signal extraction lead terminals for taking out the Hall electromotive force signal of the pellet 10.
  • the magnetic sensor manufacturing method of the present embodiment is surrounded by a step of preparing a lead frame in which a plurality of lead terminals are formed on one surface of a substrate, and the plurality of lead terminals on one surface of the substrate.
  • the insulating layer is left on the surface opposite to the surface having the plurality of electrode portions.
  • FIGS. 2A to 2E and FIGS. 3A to 3D are a plan view and cross-sectional views showing a method of manufacturing the magnetic sensor 100 in the order of steps. 2A to 2E, the dicing blade width (ie, the kerf width) is not shown.
  • a lead frame 120 on which the aforementioned lead terminals are formed is prepared.
  • the lead frame 120 is a substrate in which a plurality of lead terminals 20 shown in FIG. 1B are connected in the vertical direction and the horizontal direction in plan view.
  • one surface of the heat-resistant film 80 is attached to the back side of the lead frame 120 as a base material.
  • an insulating adhesive layer is applied to one surface of the heat resistant film 80.
  • the adhesive layer is based on, for example, a silicone resin as a component. This adhesive layer makes it easy to attach the lead frame 120 to the heat resistant film 80. By sticking the heat resistant film 80 to the back surface side of the lead frame 120, the penetration region penetrating the lead frame 120 is closed with the heat resistant film 80 from the back surface side.
  • the heat resistant film 80 which is a base material, it is preferable to use the resin-made tape which has adhesiveness and has heat resistance.
  • the one where the paste thickness of the adhesion layer is thinner is preferable.
  • heat resistance it is necessary to withstand temperatures of about 150 ° C. to 200 ° C.
  • a heat-resistant film 80 for example, a polyimide tape can be used.
  • the polyimide tape has heat resistance that can withstand about 280 ° C.
  • Such a polyimide tape having high heat resistance can withstand high heat applied during subsequent molding or wire bonding.
  • the following tape may be used as the heat resistant film 80.
  • -Polyester tape Heat-resistant temperature, about 130 ° C (however, the heat-resistant temperature reaches about 200 ° C depending on use conditions).
  • the insulating paste 40 is applied to the region surrounded by the lead terminals 22 to 25 on the surface of the heat resistant film 80 having the adhesive layer.
  • the application conditions of the insulating paste 40 for example, the application range, the application thickness, etc.
  • the pellet 10 is mounted in the area
  • heat treatment that is, curing
  • heat treatment that is, curing
  • a mold resin 50 is formed (that is, resin sealing is performed). This resin sealing is performed using, for example, a transfer mold technique.
  • a mold die 90 including a lower die 91 and an upper die 92 is prepared, and the lead frame 20 after wire bonding is placed in the cavity of the mold die 90. .
  • the mold resin 50 heated and melted is injected and filled into the side of the cavity having the adhesive layer of the heat resistant film 80 (that is, the surface bonded to the lead frame 20).
  • the pellet 10 at least the surface side of the lead frame 20, and the fine metal wires 31 to 34 are resin-sealed.
  • the mold resin 50 is taken out from the mold.
  • the heat resistant film 80 is peeled from the insulating paste 40 and the mold resin 50.
  • the heat resistant film 80 is peeled from the insulating paste 40 and the mold resin 50 while leaving the insulating paste 40 on the back surface of the pellet 10.
  • exterior plating is applied to the surface exposed from the mold resin 50 of the lead frame 20 (at least the back surface exposed from the mold resin 50 of each lead terminal 22 to 25).
  • the exterior plating layer 60 is formed.
  • a dicing tape 93 is attached to the upper surface of the mold resin 50 (that is, the surface opposite to the surface having the exterior plating layer 60 of the magnetic sensor 100).
  • the blade is moved relative to the lead frame 120 to cut the mold resin 50 and the lead frame 120 (that is, dicing is performed). Do.) That is, the mold resin 50 and the lead frame 120 are diced for each of the plurality of pellets 10 and separated into individual pieces. The diced lead frame 120 becomes the lead terminal 20.
  • the magnetic sensor 100 shown in FIGS. 1A to 1D is completed.
  • FIG. 4 is a cross-sectional view showing a configuration example of the magnetic sensor device 200 according to the first embodiment of the present invention.
  • a wiring board 250 is prepared as shown in FIG. 4, for example, and the magnetic sensor 100 is mounted on one surface of the wiring board 250.
  • the back surface of each of the lead terminals 22 to 25 that is exposed from the mold resin 50 and is covered with the exterior plating layer 60 is connected to the wiring pattern 251 of the wiring board 250 via the solder 70.
  • This soldering can be performed by a reflow method, for example.
  • a solder paste is applied (that is, printed) on the wiring pattern 251, and the magnetic sensor 100 is disposed on the wiring substrate 250 so that the exterior plating layer 60 is overlaid thereon. It is a method of melting solder by adding. After the mounting process, as shown in FIG. 4, the magnetic sensor 100, the wiring board 250 to which the magnetic sensor 100 is attached, and the lead terminals 22 to 25 of the magnetic sensor 100 are electrically connected to the wiring pattern 251 of the wiring board 250. The magnetic sensor device 200 including the solder 70 to be connected is completed.
  • the thin metal wires 31 to 34 correspond to “a plurality of conductive wires” of the present invention
  • the insulating paste 40 corresponds to the “insulating layer” of the present invention
  • the mold resin 50 corresponds to the “resin member” of the present invention. Is supported.
  • the lead terminal 22 corresponds to the “first lead terminal” of the present invention
  • the lead terminal 24 corresponds to the “second lead terminal” of the present invention.
  • One of the lead terminals 23 and 25 corresponds to the “third lead terminal” of the present invention, and the other corresponds to the “fourth lead terminal” of the present invention.
  • the heat resistant film 80 corresponds to the “base material” of the present invention.
  • the first embodiment of the present invention has the following effects.
  • the pellet 10 It is possible to prevent a Schottky junction from being formed between the semiconductor) and the solder 70 (metal), and to prevent current from flowing in the forward direction of the Schottky junction (that is, the direction from the metal toward the semiconductor). be able to. For example, as shown in FIG.
  • the current flows from the solder 70 to the pellet 10. Can be prevented from flowing. Therefore, even when the pellet 10 is reduced in size and thickness in the islandless magnetic sensor 100, an increase in leakage current can be prevented.
  • the magnetic sensor 100 and the magnetic sensor device 200 can be further reduced in size and thickness.
  • FIG. 6 is a diagram schematically showing the effect of reducing variation in the offset voltage Vu with respect to the input voltage Vin.
  • the horizontal axis of FIG. 6 indicates the input voltage Vin for the magnetic sensor, and the vertical axis indicates the offset voltage Vu of the magnetic sensor.
  • the input voltage Vin is a potential difference between the input terminals of the magnetic sensor, and a plus (+) of Vin is a minus of Vin when a voltage is applied in a forward direction (that is, a direction in which a current flows from the lead terminal 22 to the lead terminal 24).
  • (-) Shows a case where a voltage is applied in the reverse direction (that is, the direction in which current flows from the lead terminal 24 to the lead terminal 22).
  • the offset voltage Vu is a potential difference between the output terminals in an environment without magnetism.
  • the offset voltage Vu is ideally zero (0) regardless of the magnitude of the input voltage Vin.
  • the insulating paste 40 is provided between the pellet 10 and the solder 70. Even under the above assumption, no Schottky junction is formed. For this reason, even if the pellet 10 is thinned, no current flows between the pellet 10 and the solder 70, and the variation in the offset voltage Vu can be suppressed as shown by the solid line in FIG.
  • the insulating paste 40 includes, for example, an epoxy thermosetting resin as its component. For this reason, by performing the curing after die bonding, the insulating paste 40 can be easily cured, and the back surface of the pellet 10 can be sealed with the cured insulating paste 40.
  • an insulating layer having adhesive strength (as an example, the insulating paste 40) is applied on the adhesive layer of the heat resistant film 80. And the pellet is attached on it. Since both the adhesive strength of the heat resistant film 80 and the adhesive strength of the insulating paste 40 are used for attaching the pellet 10, the adhesion between the heat resistant film 80 and the pellet 10 can be enhanced. Thereby, for example, in the resin sealing step shown in FIG. 3A, it is possible to prevent the molten mold resin 50 from permeating between the heat resistant film 80 and the pellet 10. Further, it is possible to prevent the relative positional relationship between the pellet 10 and the lead frame 20 from fluctuating due to bonding impact in the wire bonding step after resin sealing.
  • the thickness of the part which covers the back surface of the pellet 10 among the insulating paste 40 is ensured at least 2 micrometers or more. According to the knowledge of the present inventor, if the thickness is at least 2 ⁇ m or more, even when the solder 70 protrudes to the lower side of the pellet 10, the reliability of insulation between the pellet 10 and the solder 70 is improved, Formation of a Schottky junction can be prevented.
  • the pellet 10 may be a Hall IC instead of a Hall element. Even with such a configuration, the effects (1) to (4) of the first embodiment are obtained.
  • Second Embodiment In said 1st Embodiment, the case where the insulating paste 40 was used as an insulating layer which covers the back surface of the pellet 10 was demonstrated.
  • the insulating layer is not limited to the insulating paste 40.
  • an adhesive layer of a die attach film that is, a dicing / die bonding integrated film
  • this point will be described.
  • FIGS. 7A to 7C are a cross-sectional view, a plan view, and an external view showing a configuration example of a magnetic sensor 300 according to the second embodiment of the present invention.
  • FIG. 7A shows a cross section of FIG. 7B cut along a broken line BB ′.
  • the mold resin 50 is omitted in order to avoid complication of the drawing.
  • the magnetic sensor 300 includes a pellet 10, a lead terminal 20, a plurality of fine metal wires 31 to 34, an insulating adhesive layer 130, and a mold resin 50.
  • the adhesive layer 130 includes, for example, an epoxy thermosetting resin, an ultraviolet (UV) curable resin, and a binder resin as its components.
  • the entire back surface of the pellet 10 is covered with the adhesive layer 130.
  • the thickness of the part which covers the back surface of the pellet 10 among the adhesion layers 130 is 10 micrometers or more, for example.
  • the configuration of the magnetic sensor 300 other than the adhesive layer 130 is the same as that of the magnetic sensor 100 described in the first embodiment, for example.
  • the operation of the magnetic sensor 300 is the same as that of the magnetic sensor 100.
  • FIG. 8A is a cross-sectional views showing the method of manufacturing the magnetic sensor 300 according to the second embodiment of the present invention in the order of steps.
  • a die attach film 140 is prepared.
  • the die attach film 140 includes a film substrate 135 and an insulating adhesive layer 130 disposed on one surface of the film substrate 135.
  • the back surface of the semiconductor wafer 160 in which the plurality of pellets 10 are formed (that is, the surface opposite to the surface having the active layer 12) is brought into contact with and adhered to the adhesive layer 130 of the die attach film 140 (that is, the wafer). Mount).
  • the adhesion between the pellet 10 and the film substrate 135 by the adhesive layer 130 is maintained in the process of FIG.
  • the adhesive layer 130 is formed in the process of FIG. 8C.
  • a process for adjusting the adhesive force of the adhesive layer 130 may be performed.
  • the process for adjusting the adhesive force is performed at the timing of wafer mounting or at the timing before and after.
  • the die attach film 140 when performing wafer mounting, the die attach film 140 is heated through a stage to increase the adhesive strength of the binder resin component, which is one of the components of the adhesive layer 130, thereby making the semiconductor wafer 160 and the adhesive layer 130 stronger. You may adjust to the direction to adhere.
  • UV is irradiated toward the die attach film 140 from the side opposite to the surface having the adhesive layer 130 of the die attach film 140, which is one of the components of the adhesive layer 130.
  • the UV curable resin component may be cured and hardened so that dicing is facilitated, and the adhesive force between the film substrate 135 and the adhesive layer 130 may be reduced during die bonding.
  • the semiconductor wafer 160 is diced using, for example, a blade 170, and a plurality of pellets 10 formed in the semiconductor wafer 160 are separated into pieces.
  • the adhesive layer 130 is diced together.
  • the back surface of the pellet 10 is pushed up by the needle-like push-up pins 180 and the surface of the pellet 10 is attracted and lifted by the collet 190 (that is, picked up).
  • the pressure-sensitive adhesive layer 130 of the die attach film 140 is adjusted in advance so as to reduce the pressure-sensitive adhesive force by performing at least one of heating and UV irradiation, for example.
  • the adhesive layer 130 is peeled off from the film substrate 135 in a state where it is adhered to the back surface of the pellet 10. That is, the adhesive layer 130 is peeled off from the film substrate 135 together with the pellet 10.
  • the traces of the pins may remain on the adhesive layer 130 of the die attach film 140.
  • the adhesive layer 130 of the die attach film 140 is used as an insulating layer.
  • a lead frame 120 is prepared, and one surface of a heat resistant film 80, for example, is pasted on the back side thereof. As described above, for example, an insulating adhesive layer is applied to one surface of the heat resistant film 80.
  • the penetration region through which the lead frame 120 penetrates is closed with the heat resistant film 80 from the back surface side.
  • the pellets 10 are arranged in a region surrounded by the lead terminals 22 to 25 in the heat resistant film 80 (ie, die bonding is performed).
  • the back surface side of the pellet 10 is attached to one surface of the heat resistant film 80 via the adhesive layer 130.
  • heat treatment is performed to cure the components of the pressure-sensitive adhesive layer 130 (for example, an epoxy resin thermal effect resin component) to obtain sufficient adhesive strength.
  • the subsequent steps are the same as those in the first embodiment. That is, wire bonding is performed as shown in FIG. 2D, and resin sealing is performed as shown in FIG.
  • the heat resistant film 80 is peeled from the adhesive layer 130 and the mold resin 50. Thereby, the heat resistant film 80 is peeled from the adhesive layer 130 and the mold resin 50 while leaving the insulating adhesive layer 130 on the back surface of the pellet 10.
  • the exterior plating layer 60 is formed on the surface exposed from the mold resin 50 of the lead frame 20.
  • the mold resin 50 and the lead frame substrate 120 are diced along the kerf width.
  • the semiconductor wafer 160 corresponds to the “substrate” of the present invention
  • the adhesive layer 130 corresponds to the “insulating adhesive layer” of the present invention
  • the film substrate 135 corresponds to the “film substrate of the present invention. Is supported. Other correspondences are the same as those in the first embodiment.
  • the second embodiment of the present invention exhibits the following effects in addition to the effects (1) to (5) of the first embodiment.
  • the adhesive layer 130 of the die attach film 140 is used as an insulating layer that covers the back surface of the pellet 10. Thereby, since the application
  • the adhesion layer 130 contains binder resin and UV curable resin as the component, for example.
  • the adhesive force of the adhesive layer 130 is increased by performing heat treatment in a direction in which the semiconductor wafer 160 and the adhesive layer 130 are more strongly adhered, and in the direction in which dicing is facilitated by performing UV irradiation, and The adhesive force between the film substrate 135 and the adhesive layer 130 can be adjusted to be reduced. Thereby, in the process of picking up the pellet 10, the adhesive layer 130 can be easily peeled off from the film substrate 135 together with the pellet 10.
  • the adhesive layer 130 has a high viscosity, it is possible to make the creeping of the side surface of the pellet 10 extremely small as compared with the case where the insulating paste 40 is used. Thereby, there is no defect that the resin adheres to the surface of the pellet 10, and there is an advantage that the thickness of the adhesive layer 130 is not reduced and the thickness can be made uniform.
  • the adhesion layer 130 when using the adhesion layer 130, there exists an advantage that it can be stored by refrigeration instead of freezing about the storage conditions. In the case of refrigerated storage, thawing of the insulating adhesive layer is unnecessary, and there is an advantage that it can be used immediately when necessary. Further, the process conditions also have advantages such as no need to manage the coating amount, small wetting spread, small creeping, and small thickness variation.
  • the modification described in the first embodiment may also be applied to the second embodiment. That is, the pellet 10 may be a Hall IC instead of a Hall element. Even with such a configuration, the effects (1) to (4) of the second embodiment are obtained in addition to the effects (1) to (5) of the first embodiment.
  • the magnetic sensor 300 may be configured by mounting the magnetic sensor 300 described in the second embodiment on the wiring board 250 instead of the magnetic sensor 100. Even with such a configuration, the effects (1) to (4) of the second embodiment are obtained in addition to the effects (1) to (5) of the first embodiment. ⁇ Others>
  • the present invention is not limited to the embodiments described above. Based on the knowledge of those skilled in the art, design changes and the like can be made to each embodiment, and an aspect in which such changes and the like are added is also included in the scope of the present invention.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Dicing (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Measuring Magnetic Variables (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

Le capteur magnétique de l'invention est équipé : d'une pastille (10); d'une pluralité de bornes de câblage (22 à 25) disposée à la périphérie de la pastille (10); d'une pluralité de fils métalliques minces (31 à 34) qui connectent électriquement de manière individuelle une pluralité de parties électrode appartenant à la pastille (10) et chacune des bornes de câblage (22 à 25); une pâte isolante (40) revêtant la face envers de la pastille (10); et une résine de moulage (50) revêtant la pastille (10) et la pluralité de fils métalliques minces (31 à 34). Au moins une partie de la une pâte isolante (40) et au moins une partie la face envers de chacune des bornes de câblage (22 à 25), sont exposées individuellement depuis la résine de moulage (50).
PCT/JP2013/007097 2012-12-14 2013-12-03 Capteur magnétique, et dispositif ainsi que procédé de capteur magnétique WO2014091714A1 (fr)

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KR1020167011246A KR20160052798A (ko) 2012-12-14 2013-12-03 자기 센서 및 자기 센서 장치, 자기 센서의 제조 방법
CN201380012069.XA CN104170109B (zh) 2012-12-14 2013-12-03 磁传感器和磁传感器装置
KR1020147020169A KR20140113964A (ko) 2012-12-14 2013-12-03 자기 센서 및 자기 센서 장치, 자기 센서의 제조 방법
JP2014529369A JP5676826B2 (ja) 2012-12-14 2013-12-03 磁気センサの製造方法

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JP2016021549A (ja) * 2014-06-17 2016-02-04 旭化成エレクトロニクス株式会社 ホールセンサ
WO2016047130A1 (fr) * 2014-09-22 2016-03-31 旭化成エレクトロニクス株式会社 Capteur à effet hall et module de lentille
WO2016051726A1 (fr) * 2014-10-03 2016-04-07 旭化成エレクトロニクス株式会社 Procédé de fabrication de capteur à effet hall, capteur à effet hall et module de lentille
JP2016103533A (ja) * 2014-11-27 2016-06-02 旭化成エレクトロニクス株式会社 ホールセンサ及びホールセンサの製造方法
JP2017005017A (ja) * 2015-06-05 2017-01-05 旭化成エレクトロニクス株式会社 ホールセンサ
JP2017108077A (ja) * 2015-12-11 2017-06-15 旭化成エレクトロニクス株式会社 ホールセンサ及びその製造方法
JP2018066722A (ja) * 2016-10-14 2018-04-26 旭化成エレクトロニクス株式会社 半導体装置
JP2018074067A (ja) * 2016-11-01 2018-05-10 旭化成エレクトロニクス株式会社 半導体装置
CN110376537A (zh) * 2017-12-19 2019-10-25 大连理工大学 一种适用于高温工作环境的半导体三维霍尔传感器制作方法
JP7138261B1 (ja) 2022-06-30 2022-09-15 旭化成エレクトロニクス株式会社 半導体パッケージ、及び駆動装置
JP7360906B2 (ja) 2019-11-15 2023-10-13 ローム株式会社 半導体装置の製造方法及び半導体装置

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JP2023036447A (ja) * 2021-09-02 2023-03-14 新電元工業株式会社 リードフレーム一体型基板、半導体装置、リードフレーム一体型基板の製造方法、及び半導体装置の製造方法

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JP2016021549A (ja) * 2014-06-17 2016-02-04 旭化成エレクトロニクス株式会社 ホールセンサ
JPWO2016047130A1 (ja) * 2014-09-22 2017-04-27 旭化成エレクトロニクス株式会社 ホールセンサ及びレンズモジュール
WO2016047130A1 (fr) * 2014-09-22 2016-03-31 旭化成エレクトロニクス株式会社 Capteur à effet hall et module de lentille
KR101868760B1 (ko) * 2014-10-03 2018-06-18 아사히 가세이 일렉트로닉스 가부시끼가이샤 홀 센서의 제조 방법 및 홀 센서와 렌즈 모듈
WO2016051726A1 (fr) * 2014-10-03 2016-04-07 旭化成エレクトロニクス株式会社 Procédé de fabrication de capteur à effet hall, capteur à effet hall et module de lentille
JP6085726B2 (ja) * 2014-10-03 2017-02-22 旭化成エレクトロニクス株式会社 ホールセンサの製造方法及びホールセンサ並びにレンズモジュール
KR20170028378A (ko) 2014-10-03 2017-03-13 아사히 가세이 일렉트로닉스 가부시끼가이샤 홀 센서의 제조 방법 및 홀 센서와 렌즈 모듈
JPWO2016051726A1 (ja) * 2014-10-03 2017-04-27 旭化成エレクトロニクス株式会社 ホールセンサの製造方法及びホールセンサ並びにレンズモジュール
JP2016103533A (ja) * 2014-11-27 2016-06-02 旭化成エレクトロニクス株式会社 ホールセンサ及びホールセンサの製造方法
JP2017005017A (ja) * 2015-06-05 2017-01-05 旭化成エレクトロニクス株式会社 ホールセンサ
JP2017108077A (ja) * 2015-12-11 2017-06-15 旭化成エレクトロニクス株式会社 ホールセンサ及びその製造方法
JP2018066722A (ja) * 2016-10-14 2018-04-26 旭化成エレクトロニクス株式会社 半導体装置
JP2018074067A (ja) * 2016-11-01 2018-05-10 旭化成エレクトロニクス株式会社 半導体装置
CN110376537A (zh) * 2017-12-19 2019-10-25 大连理工大学 一种适用于高温工作环境的半导体三维霍尔传感器制作方法
CN110376537B (zh) * 2017-12-19 2020-07-24 大连理工大学 一种适用于高温工作环境的半导体三维霍尔传感器制作方法
JP7360906B2 (ja) 2019-11-15 2023-10-13 ローム株式会社 半導体装置の製造方法及び半導体装置
JP7138261B1 (ja) 2022-06-30 2022-09-15 旭化成エレクトロニクス株式会社 半導体パッケージ、及び駆動装置
JP2024005900A (ja) * 2022-06-30 2024-01-17 旭化成エレクトロニクス株式会社 半導体パッケージ、及び駆動装置

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TWI543417B (zh) 2016-07-21
KR20140113964A (ko) 2014-09-25
CN106784300A (zh) 2017-05-31
TW201436313A (zh) 2014-09-16
CN104170109A (zh) 2014-11-26
CN106848055A (zh) 2017-06-13
KR20160052798A (ko) 2016-05-12
JPWO2014091714A1 (ja) 2017-01-05
JP5676826B2 (ja) 2015-02-25

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