WO2014087792A1 - 高周波モジュール - Google Patents
高周波モジュール Download PDFInfo
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- WO2014087792A1 WO2014087792A1 PCT/JP2013/080189 JP2013080189W WO2014087792A1 WO 2014087792 A1 WO2014087792 A1 WO 2014087792A1 JP 2013080189 W JP2013080189 W JP 2013080189W WO 2014087792 A1 WO2014087792 A1 WO 2014087792A1
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- internal electrode
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- 239000000463 material Substances 0.000 claims description 102
- 238000003475 lamination Methods 0.000 claims description 6
- 238000010030 laminating Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000032798 delamination Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 230000006355 external stress Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
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- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
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- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5384—Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
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- H01L25/165—Containers
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- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B5/00—Near-field transmission systems, e.g. inductive or capacitive transmission systems
- H04B5/70—Near-field transmission systems, e.g. inductive or capacitive transmission systems specially adapted for specific purposes
- H04B5/77—Near-field transmission systems, e.g. inductive or capacitive transmission systems specially adapted for specific purposes for interrogation
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
- H05K1/0218—Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
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- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
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- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
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- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
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- H01L2223/6616—Vertical connections, e.g. vias
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- H01L2223/66—High-frequency adaptations
- H01L2223/6644—Packaging aspects of high-frequency amplifiers
- H01L2223/6655—Matching arrangements, e.g. arrangement of inductive and capacitive components
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- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6661—High-frequency adaptations for passive devices
- H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
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- H01L2924/11—Device type
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- H01L2924/141—Analog devices
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15313—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a land array, e.g. LGA
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- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
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- H01L2924/30—Technical effects
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- H01L2924/3025—Electromagnetic shielding
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- H05K1/02—Details
- H05K1/0296—Conductive pattern lay-out details not covered by sub groups H05K1/02 - H05K1/0295
- H05K1/0298—Multilayer circuits
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/0929—Conductive planes
- H05K2201/09354—Ground conductor along edge of main surface
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/095—Conductive through-holes or vias
- H05K2201/09618—Via fence, i.e. one-dimensional array of vias
Definitions
- the present invention relates to a high-frequency module in which an internal electrode and a via electrode connected to a ground and a high-frequency circuit component are provided inside a laminated substrate in which a plurality of base materials are laminated.
- the high-frequency module is configured by mounting active elements, passive elements, and wirings constituting a high-frequency circuit inside the multilayer substrate or on the top surface of the multilayer substrate.
- a multilayer substrate is configured by laminating a plurality of base materials, providing internal electrodes between layers, and providing via electrodes penetrating the layers (see, for example, Patent Document 1).
- FIG. 6 is a perspective view of a multilayer substrate constituting a high-frequency module according to a conventional example.
- a laminated substrate 101 shown in FIG. 6 includes a laminated portion 102 composed of a plurality of base materials, a ground internal electrode 103 provided between layers of the laminated portion 102, and a ground provided in a layer of the laminated portion 102.
- a via electrode 104 for use The internal electrode 103 is provided endlessly along the outer edge of the stacked portion 102 viewed from the stacking direction (hereinafter, the outer edge viewed from the stacking direction is simply referred to as the outer edge).
- the via electrodes 104 are densely arranged along the outer edge of the stacked portion 102 and connect the opposed internal electrodes 103 to each other. Therefore, the high-frequency module 101 has a shielding property against high-frequency noise at the outer edge of the stacked portion 2 by the ground internal electrode 103 and the via electrode 104.
- the ground internal electrode 103 is provided along the outer edge of the laminated portion 102, the thickness around the outer edge of the laminated portion 102 increases by the thickness of the internal electrode 103.
- the amount of thickness reduction of the stacked portion 102 that occurs at the time of manufacture becomes small around the via electrode, when the number of ground via electrodes 104 is large, the thickness is reduced between the periphery and the center of the stacked portion 102. Will be greatly different. Therefore, in order to mold the stacked portion 102 with high flatness, it is desirable that the number of layers of the stacked portion 102, the number of internal electrodes 103, and the number of via electrodes 104 are small.
- the internal electrode 103 is provided along the entire circumference of the outer edge in all layers of the stacked portion 102, the inner area is smaller than the internal electrode 103, and the area is used. Low efficiency. Therefore, in order to realize a complicated wiring structure in which a large number of active elements and passive elements are mounted on the stacked portion 102, it is difficult to reduce the number of layers of the stacked portion 102 and the number of internal electrodes 103.
- the internal electrode 103 is provided with almost the same overall length as the outer edge of the stacked portion 102, when the number of the via electrodes 104 is reduced, the internal electrode 103 has inductivity and the internal electrode 103 has a ground potential.
- the high-frequency characteristics are deteriorated due to the potential difference from. Therefore, in order to prevent deterioration of the high frequency characteristics, it is difficult to greatly reduce the number of via electrodes 104.
- the high-frequency module 101 can reduce the number of layers of the stacked portion 102, the number of internal electrodes 103, and the number of via electrodes 104 in order to ensure a complicated wiring structure and good high-frequency characteristics. It was not possible to achieve high flatness.
- the multilayer substrate 101 according to the conventional example since the metal density in the vicinity of the outer edge of the multilayer portion 102 is high, the permeation (gas escape) of the gas released from the internal residue at the time of manufacture is hindered. There was also a problem that delamination was likely to occur between the layers and the reliability was lowered.
- an object of the present invention is to provide a high-frequency circuit with a complicated wiring structure and a high-frequency circuit with good high-frequency characteristics even when the number of ground internal electrodes and via electrodes is reduced, and has high flatness.
- An object of the present invention is to provide a high-frequency module that can achieve high reliability and shielding performance.
- the high-frequency module according to the present invention includes a laminated part, a plurality of bottom electrodes, a high-frequency circuit part, and a plurality of ground internal electrodes.
- the stacking unit is formed by stacking a plurality of base materials in the stacking direction.
- the bottom electrode is provided on one main surface in the stacking direction of the stacked portion.
- the high-frequency circuit unit is provided through the inside of the stacked unit, and is connected to at least one of the bottom electrodes.
- Each of the plurality of ground internal electrodes is provided between any layers of the laminated portion and connected to the ground bottom electrode, and extends along the outer edge of the laminated portion and extends outside the high-frequency circuit portion. And endlessly connected to each other when seen through from the stacking direction.
- the plurality of ground internal electrodes are arranged so as to be endlessly (looped) as seen through from the stacking direction, so that the high-frequency circuit portion provided inside the ground internal electrode is affected by high-frequency noise. It is hard to receive.
- the metal density in the vicinity of the outer edge of the laminated portion is small, the gas release property during production is high.
- the thickness in the vicinity of the outer edge of the stacked portion is suppressed.
- the area of the ground internal electrode is small in each layer, the area utilization efficiency is high.
- the ground internal electrode is in the form of a line end and shorter than the entire circumference of the outer edge, the ground internal electrode is difficult to have inductivity.
- the high-frequency circuit unit includes a surface-mounted element mounted on the other main surface on the opposite side to the one main surface of the stacked unit on which the bottom electrode is provided, and the bottom electrode for the ground When it sees through from the lamination direction, it is suitable when it overlaps with the said high frequency circuit part.
- the shielding property in the stacking direction can also be obtained by the surface mount type element and the ground bottom electrode.
- each of the plurality of ground internal electrodes overlap each other at the corners of the stacked portion as seen through from the stacking direction.
- the electrode density at the corners of the laminated portion increases and the strength increases.
- the external stress that acts on the high-frequency module from the external substrate is large at the corner portion of the laminated portion. Therefore, the reliability can be further improved by increasing the strength of the corner portion.
- the stacked unit is a cube including the first to fourth base materials, and the first base is formed along the first side of the stacked unit as viewed from the stacking direction as a plurality of ground internal electrodes.
- a fourth ground internal electrode is a cube including the first to fourth base materials
- the first base is formed along the first side of the stacked unit as viewed from the stacking direction as a plurality of ground internal electrodes.
- the first base material, the second base material, the third base material, and the fourth base material may be arranged in the stacking direction in the order according to the description order.
- the laminated portion is a cube including the first and second base materials, and the first base is formed along the first side of the laminated portion as viewed from the lamination direction as a plurality of ground internal electrodes.
- a first ground internal electrode provided on the material a second ground internal electrode provided on the second base material along a second side orthogonal to the first side, A third ground internal electrode provided on the first base material along a third side orthogonal to the second side, and a fourth side orthogonal to the third side
- a fourth ground internal electrode provided on the second base material is a cube including the first and second base materials
- the first base is formed along the first side of the laminated portion as viewed from the lamination direction as a plurality of ground internal electrodes.
- a first ground internal electrode provided on the material a second ground internal electrode provided on the second base material along a second side orthogonal to the first side
- a third ground internal electrode provided on the first base material along a third side orthogonal to the second side
- the stacked unit is a cube including the first and second base materials, and is orthogonal to the first side and the first side of the stacked unit as viewed from the stacking direction as a plurality of ground internal electrodes.
- a first ground internal electrode provided on the first base material along the second side, a third side orthogonal to the second side, and a fourth side orthogonal to the third side
- a second ground internal electrode provided on the second base material along the side.
- the high-frequency circuit portion provided in the laminated portion is not easily affected by high-frequency noise, and high shielding properties can be obtained.
- gas can be easily released from the laminated portion during manufacturing, delamination is unlikely to occur, and high reliability can be obtained.
- the thickness in the vicinity of the outer edge of the laminated portion is suppressed, high flatness can be obtained.
- the area utilization efficiency is high in each layer, and since the internal electrode for ground is not easily inductive, it is easy to realize a complicated wiring structure and good high-frequency characteristics. Even when good high-frequency characteristics are realized, the number of base materials, the number of ground internal electrodes, and the number of ground via electrodes can be reduced. Thereby, extremely high flatness can be realized.
- FIG. 1 is a circuit diagram of a high-frequency circuit unit 11 included in the high-frequency module 1 according to the first embodiment.
- the high-frequency circuit unit 11 is, for example, an NFC (Near Field Communication) type reader / writer circuit, and is connected to the antenna 12.
- NFC Near Field Communication
- the high-frequency circuit unit 11 includes an RF-IC 13 and a plurality of passive elements 14.
- the plurality of passive elements 14 constitute a low-pass filter circuit 15 and a matching circuit 16.
- the RF-IC 13 is connected to the antenna 12 via a low-pass filter circuit 15 and a matching circuit 16.
- the ground potential is stabilized, so that the high-frequency characteristics of each unit, that is, the filter characteristics in the low-pass filter circuit 15 and the matching characteristics by the matching circuit 16 are stabilized. .
- FIG. 2A is a side sectional view of the high-frequency module 1.
- FIG. 2B is a plan view of the bottom surface side of the high-frequency module 1.
- the cross section shown in FIG. 2A is a cross section at a position indicated by a broken line B-B ′ in FIG.
- conductive members are indicated by hatching with solid lines
- insulating members are indicated by hatching with non-solid lines.
- the high-frequency module 1 includes a stacked unit 2, an input / output bottom electrode 3, a ground bottom electrode 4, a bottom-side resist. Part 5, top surface electrode 7, and top surface side resist part 8.
- the laminated portion 2 is a cube having a bottom surface as a mounting surface, and is configured by laminating six layers of base materials described later in the vertical direction.
- wiring for connecting the RF-IC 13, each passive element 14, and the antenna 12 is provided as an internal electrode.
- the RF-IC 13 and each passive element 14 are configured as chip-type elements mounted on the top surface of the stacked unit 2. Part or all of the passive elements 14 are mounted as chip-type elements on the top surface of the stacked unit 2, built in the stacked unit 2 as chip-type elements, or configured by internal electrodes of the stacked unit 2. May be.
- the top surface electrode 7 is provided on the top surface of the laminated portion 2, and the terminals of the RF-IC 13 and each passive element 14 are joined to each other.
- the top surface side resist portion 8 is provided on the top surface of the laminated portion 2 except for the region where the top surface electrode 7 is formed, and mounting solder for mounting the RF-IC 13 and each passive element 14 is provided for each top surface side resist portion 8. It has a function of preventing a short circuit from leaking from the top electrode 7.
- the bottom electrode 3 and the bottom electrode 4 are provided on the bottom surface of the laminated portion 2. Therefore, the high-frequency module 1 has a bottom surface mounting type configuration.
- the bottom electrode 3 for input / output is a pad electrode with a small area arranged along the outer edge on the bottom surface of the laminated portion 2.
- These bottom electrodes 3 function as a control terminal to which a control signal for controlling the RF-IC 13 is input, an output terminal for outputting an output signal output from the RF-IC 13, a ground terminal, and the like.
- the ground bottom electrode 4 is a large-area pad electrode provided on the bottom surface of the laminated portion 2 so as to cover the central portion surrounded by the bottom electrode 3.
- the bottom side resist portion 5 is provided on the bottom surface of the laminated portion 2 in a state where a plurality of openings 6 are formed in a matrix, and when mounted on the external substrate 21 described later.
- the mounting solder has a function of preventing leakage from each terminal to cause a short circuit defect.
- Each opening 6 exposes bottom electrode 3 or bottom electrode 4 on the bottom surface side of laminated portion 2. More specifically, the plurality of openings 6 located in the outer rows and columns arranged along the outer edge of the stacked portion 2 respectively face the entire surface of any of the plurality of bottom surface electrodes 3. Thus, the entire surface of the bottom electrode 3 is exposed to the bottom surface side of the laminated portion 2. The plurality of openings 6 located in the inner rows and columns arranged in the vicinity of the central portion of the laminated portion 2 are partially laminated with the bottom electrode 4 partially facing the part of the bottom electrode 4. The part 2 is exposed on the bottom side.
- FIG. 2 (C) is a side sectional view of the high frequency module 1 mounted on an external substrate.
- the high frequency module 1 is mounted on the external substrate 21.
- the external substrate 21 is provided with component mounting electrodes 23 and 24 on the surface.
- the component mounting electrode 23 is a small-area pad electrode provided in each of the regions overlapping with the plurality of pad electrodes constituting the bottom electrode 3 described above.
- the component mounting electrode 24 is a single large-area pad electrode provided in a region overlapping with the large-area pad electrode constituting the bottom electrode 4 described above.
- the component mounting electrodes 23 and 24 are bonded to the bottom electrode 3 and the bottom electrode 4 exposed from the opening 6 by applying cream-like mounting solder (solder paste) 25 on the entire surface and melting and solidifying. ing.
- cream-like mounting solder solder paste
- FIG. 3A is an exploded perspective view of the high-frequency module 1.
- FIG. 3B is a transparent view of the high-frequency module 1 viewed from the top side in the stacking direction.
- the first side facing the lower side in FIG. 3B when the stacked unit 2 is viewed from the top surface in the stacking direction is referred to as a side X1.
- the second side facing the left side in FIG. 3B is referred to as side Y1.
- the third side facing upward in FIG. 3B is referred to as side X2.
- the fourth side facing the right side in FIG. 3B is referred to as side Y2.
- the stacked unit 2 of the high-frequency module 1 has 6 base layers, and the bases 31, 32, 33, 34, 35, and 36 are provided.
- the base material 31 constitutes the top surface of the laminated portion 2, and the above-described RF-IC 13 and the plurality of passive elements 14 are mounted on the top surface of the base material 31.
- the base material 36 constitutes the bottom surface of the laminated portion 2, and the bottom electrode 4 and the bottom electrode 3 described above are formed on the bottom surface of the base material 36. In FIG. 3A, the bottom electrode 4 and the bottom electrode 3 are not shown.
- the base materials 31, 32, 33, 34, 35, and 36 are stacked so as to be hung from the top surface side to the bottom surface side of the stacked portion 2 in the order according to the description order.
- the base 31 has the above-mentioned top surface electrode 7 formed on the top surface, and a via electrode connected to the top surface electrode 7 is formed inside.
- a via electrode connected to the top surface electrode 7 is formed inside.
- the via electrode and the top electrode 7 of the base material 31 are not shown.
- the base material 32 has a ground internal electrode 32A and a ground via electrode 32B formed in a part near the outer edge.
- the ground internal electrode 32A extends along the side X1 when viewed from the top surface side in the stacking direction, and is formed in a end line shape in which both ends terminate in the vicinity of the side Y1 and the side Y2.
- the ground via electrodes 32B are arranged at equal intervals along the side X1, and are connected to the ground internal electrode 32A.
- a region where the ground internal electrode 32 ⁇ / b> A is not provided as viewed from the stacking direction is configured as the wiring region 10.
- the wiring region 10 of the base material 32 internal electrodes and via electrodes constituting the connection wiring of the high-frequency circuit unit 11 shown in FIG. 1 are formed.
- FIG. 3A wiring electrodes and via electrodes formed in the wiring region 10 of the base material 32 are not shown.
- the base material 33 has a ground internal electrode 33A and a ground via electrode 33B formed in a part near the outer edge.
- the ground internal electrode 33A extends along the side Y1 when viewed from the top surface side in the stacking direction, and is formed in a end line shape in which both ends terminate in the vicinity of the side X1 and the side X2.
- the ground via electrodes 33B are arranged at equal intervals along the side Y1, and are connected to the ground internal electrode 33A so as to overlap.
- a region where the ground internal electrode 33 ⁇ / b> A is not provided as viewed from the stacking direction is configured as the wiring region 10.
- the wiring region 10 of the base material 33 internal electrodes and via electrodes constituting the connection wiring of the high-frequency circuit unit 11 shown in FIG. 1 are formed.
- the wiring region 10 of the substrate 33 may be formed with internal electrodes and via electrodes connected to the ground via electrode 32B.
- FIG. 3A the wiring electrodes and via electrodes formed in the wiring region 10 of the base material 33 are not shown.
- the base material 34 has a ground internal electrode 34A and a ground via electrode 34B formed in a part near the outer edge.
- the ground internal electrode 34A extends along the side X2 when viewed from the top surface side in the stacking direction, and is formed in a end line shape in which both ends terminate in the vicinity of the side Y1 and the side Y2.
- the ground via electrodes 34B are arranged at equal intervals along the side X2, and are connected to the ground internal electrode 34A.
- a region where the ground internal electrode 34A is not provided as viewed from the stacking direction is configured as the wiring region 10.
- the wiring region 10 of the base material 34 internal electrodes and via electrodes constituting the connection wiring of the high-frequency circuit unit 11 shown in FIG. 1 are formed.
- the wiring region 10 of the base material 34 internal electrodes and via electrodes connected to the ground via electrodes 32B and 33B may be formed.
- FIG. 3A the wiring electrodes and via electrodes formed in the wiring region 10 of the base material 34 are not shown.
- the substrate 35 has a ground internal electrode 35A and a ground via electrode 35B formed in a part near the outer edge as viewed from the stacking direction.
- the ground internal electrode 35 ⁇ / b> A extends along the side Y ⁇ b> 2 when viewed from the top surface side in the stacking direction, and is formed in a end line shape in which both ends terminate in the vicinity of the side X ⁇ b> 2 and the side X ⁇ b> 1.
- the ground via electrodes 35B are arranged at equal intervals along the side Y2, and are connected to the ground internal electrode 35A.
- a region where the ground internal electrode 35 ⁇ / b> A is not provided as viewed from the stacking direction is configured as the wiring region 10.
- the wiring region 10 of the base material 35 internal electrodes and via electrodes constituting the connection wiring of the high-frequency circuit unit 11 shown in FIG. 1 are formed.
- the wiring region 10 of the substrate 35 may be formed with internal electrodes and via electrodes connected to the ground via electrodes 32B, 33B, and 34B. In FIG. 3A, the wiring electrodes and via electrodes formed in the wiring region 10 of the substrate 35 are not shown.
- the base material 36 is configured as a wiring area 10 as viewed from the stacking direction.
- internal electrodes and via electrodes constituting the connection wiring of the high-frequency circuit unit 11 shown in FIG. 1 are formed. These internal electrodes and via electrodes are also connected to the aforementioned input / output bottom electrode 3.
- the wiring region 10 of the base material 36 is formed with internal electrodes and via electrodes connected to the ground via electrodes 32B, 33B, 34B, and 35B. These internal electrodes and via electrodes are also connected to the ground bottom electrode 4 described above.
- FIG. 3A the wiring electrodes and via electrodes formed in the wiring region 10 of the substrate 36 are not shown.
- ground internal electrodes 32A to 35A are formed in the laminated portion 2 in this way, the ground internal electrodes 32A to 35A provided on the base materials 32 to 35 are as shown in FIG. When viewed from the top surface side in the stacking direction, it is continuous in an endless manner inside the stacked portion 2.
- the high-frequency circuit unit 11 provided through the wiring region 10 of each of the base materials 31 to 36 has a high shielding property on the side surface side of the stacked unit 2.
- the bottom electrode 4 for ground provided on the bottom surface of the stacked portion 2 is surrounded by the ground internal electrodes 32A to 35A when viewed from the top surface side in the stacking direction as shown in FIG. 3B. Covers the entire area. Therefore, in this high frequency module 1, not only the shielding property with respect to the side surface direction but also the shielding property on the bottom surface side in the stacking direction can be obtained. Further, since the top surface of the laminated portion 2 is almost covered with the top surface electrode 7 and each element, the high frequency module 1 can ensure a certain degree of shielding performance on the top surface side in the stacking direction. it can.
- the shielding performance of the stacked portion 2 can be improved.
- the thickness around the outer edge of the portion 2 is larger than the thickness near the center of the laminated portion 2.
- all the ground internal electrodes 32A to 35A overlap only at the corners, and the thickness of the laminated portion 2 increases by the thickness of all the ground internal electrodes 32A to 35A.
- the ground internal electrodes 32A to 35A do not overlap each other, and the thickness of the stacked portion 2 increases only by the thickness of one of the ground internal electrodes 32A to 35A.
- the metal density is reduced in at least a part of the vicinity of the outer edge of the laminated portion 2. Then, when the solvent component and moisture contained in the material are volatilized when the laminated part 2 is formed, the volatilized gas can easily escape from the laminated part 2. Therefore, generation
- the area occupied by the ground internal electrodes 32A to 35A is only the area of the region along one side of the outer edge, and therefore the area occupied by the wiring region 10 is large.
- the area utilization efficiency in 32 to 35 is high. Therefore, even if the wiring structure of the high-frequency circuit unit 11 is complicated, it is not necessary to increase the number of base materials in the stacked unit 2, and the number of ground internal electrodes can be suppressed. Then, since the increase in the thickness of the laminated portion 2 due to the ground internal electrode can also be suppressed, even if the wiring structure of the high-frequency circuit portion 11 is complicated, high flatness can be realized in the laminated portion 2. is there.
- the ground internal electrodes 32A to 35A are sufficiently shorter than the entire length of the outer periphery of the stacked portion 2, and even if the number of ground via electrodes 32B to 35B is small, it is difficult to have inductivity. Accordingly, the ground internal electrodes 32A to 35A are unlikely to have a potential difference from the ground potential, and it is easy to realize good high frequency characteristics. Therefore, the number of ground via electrodes can be reduced while realizing good high frequency characteristics. Then, it is possible to suppress the influence of the decrease in the thickness shrinkage of the laminated portion 2 that occurs around the ground via electrode during manufacturing, and the flatness of the laminated portion 2 can be further increased.
- ground internal electrodes 32A to 35A are arranged so as to be spirally displaced inside the laminated portion 2 .
- the ground internal electrodes 32A to 35A are arranged as described above. It is not limited.
- the stacking order of the base materials on which the ground internal electrodes 32A to 35A are provided may be changed.
- the bottom electrode 3 for input / output is arranged around the outer edge and the bottom electrode 4 for ground is arranged near the center of the inner side is shown.
- the arrangement of the bottom electrode is in such an arrangement relationship. It is not limited.
- ground internal electrodes 32A to 35A are arranged so as to overlap each other at the corners of the stacked portion 2.
- the positions where the ground internal electrodes 32A to 35A overlap are the corner portions of the stacked portion 2.
- they may overlap in the vicinity of the center of each side of the outer edge.
- FIG. 4A is an exploded perspective view of the high-frequency module 41 according to the second embodiment.
- FIG. 4B is a transparent view of the high-frequency module 41 viewed from the top side in the stacking direction.
- the high-frequency module 41 includes a laminated portion 42.
- the stacked unit 42 has four base layers and includes base members 51, 52, 53, and 56.
- the base material 51 constitutes the top surface of the laminated portion 42, and the RF-IC 43 and a plurality of passive elements 44 are mounted on the top surface of the base material 51.
- the base material 56 constitutes the bottom surface of the laminated portion 42, and the bottom electrode 45 for ground is formed on the bottom surface of the base material 56.
- the base materials 51, 52, 53, and 56 are stacked so as to hang from the top surface side to the bottom surface side of the stacked portion 42 in the order according to the description order.
- the base material 51 has a top surface electrode formed on the top surface, and a via electrode connected to the top surface electrode is formed inside.
- the base material 52 has ground internal electrodes 52A and 54A and ground via electrodes 52B and 54B formed in a part near the outer edge.
- the ground internal electrode 52A extends along the side X1 when viewed from the top surface side in the stacking direction, and is formed in the shape of a closed line whose both ends terminate in the vicinity of the side Y1 and the side Y2.
- the ground internal electrode 54A extends along the side X2 when viewed from the top surface side in the stacking direction, and is formed in the shape of a closed line whose both ends terminate in the vicinity of the side Y1 and the side Y2.
- the ground via electrodes 52B are arranged at equal intervals along the side X1, and are connected to the ground internal electrode 52A.
- the ground via electrodes 54B are arranged at equal intervals along the side X2, and are connected to the ground internal electrode 54A.
- a region where the ground internal electrodes 52A and 54A are not provided as viewed from the stacking direction is configured as the wiring region 10.
- the wiring region 10 of the base material 52 internal electrodes and via electrodes that form connection wiring of the high-frequency circuit unit are formed.
- the base 53 has ground internal electrodes 53A and 55A and ground via electrodes 53B and 55B formed in a part near the outer edge.
- the ground internal electrode 53A extends along the side Y1 when viewed from the top surface side in the stacking direction, and is formed in the shape of a closed line whose both ends terminate in the vicinity of the side X1 and the side X2.
- the ground internal electrode 55 ⁇ / b> A extends along the side Y ⁇ b> 2 when viewed from the top surface side in the stacking direction, and is formed in a end line shape in which both ends terminate in the vicinity of the side X ⁇ b> 1 and the side X ⁇ b> 2.
- the ground via electrodes 53B are arranged at equal intervals along the side Y1, and are connected to the ground internal electrode 53A.
- the ground via electrodes 55B are arranged at equal intervals along the side Y2, and are connected to the ground internal electrode 55A.
- a region where the ground internal electrodes 53A and 55A are not provided as viewed from the stacking direction is configured as the wiring region 10.
- the wiring region 10 of the base material 53 internal electrodes and via electrodes that form connection wiring of the high-frequency circuit unit are formed.
- the wiring region 10 of the substrate 53 may be formed with internal electrodes and via electrodes connected to the ground via electrodes 52B and 54B.
- the base material 56 is configured as a wiring region 10 as viewed from the stacking direction.
- internal electrodes and via electrodes that form connection wiring of the high-frequency circuit unit are formed.
- the wiring region 10 of the base material 56 is formed with internal electrodes and via electrodes connected to the ground via electrodes 52B, 53B, 54B, and 55B. These internal electrodes and via electrodes are also connected to a bottom electrode 45 for ground.
- the ground internal electrodes 52A to 55A are thus formed in the stacked portion 42, the ground internal electrodes 52A to 55A are viewed from the top side in the stacking direction as shown in FIG. Inside the stacked portion 42, the end portions are continuous.
- FIG. 5A is an exploded perspective view of the high-frequency module 61 according to the third embodiment.
- FIG. 5B is a transparent view of the high-frequency module 61 viewed from the top side in the stacking direction.
- the high-frequency module 61 includes a stacked portion 62.
- the stacking unit 62 has four base materials and includes base materials 71, 72, 73, and 76.
- the base material 71 constitutes the top surface of the laminated portion 62, and the RF-IC 63 and a plurality of passive elements 64 are mounted on the top surface of the base material 71.
- the base material 76 constitutes the bottom surface of the laminated portion 62, and a ground bottom electrode 65 is formed on the bottom surface of the base material 76.
- the base materials 71, 72, 73, and 76 are stacked in the order in accordance with the description order from the top surface side to the bottom surface side of the stacked portion 62.
- the base material 71 has a top surface electrode formed on the top surface, and a via electrode connected to the top surface electrode is formed inside.
- the base 72 has a ground internal electrode 72A and a ground via electrode 72B formed in a part near the outer edge.
- the ground internal electrode 72A extends along the side X1 and the side Y1 when viewed from the top surface side in the stacking direction, and is formed in a end line shape in which both ends terminate in the vicinity of the side X2 and the side Y2. Yes.
- the ground via electrodes 72B are arranged at equal intervals along the side X1 and the side Y1, and are connected to the ground internal electrode 72A.
- a region where the ground internal electrode 72A is not provided as viewed from the stacking direction is configured as the wiring region 10.
- the wiring region 10 of the base material 72 internal electrodes and via electrodes that form connection wiring of the high-frequency circuit unit are formed.
- the base 73 has a ground internal electrode 73A and a ground via electrode 73B formed in a part near the outer edge.
- the ground internal electrode 73A extends along the side X2 and the side Y2 when viewed from the top surface side in the stacking direction, and is formed in a end line shape in which both ends terminate in the vicinity of the side X1 and the side Y1. Yes.
- the ground via electrodes 73B are arranged at equal intervals along the side X2 and the side Y2, and are connected to overlap with the ground internal electrode 73A.
- a region where the ground internal electrode 73 ⁇ / b> A is not provided as viewed from the stacking direction is configured as the wiring region 10.
- the wiring region 10 of the base material 73 internal electrodes and via electrodes that form connection wiring of the high-frequency circuit unit are formed.
- an internal electrode or a via electrode connected to the ground via electrode 72B may be formed.
- the base material 76 is configured as the wiring region 10 as viewed from the stacking direction.
- internal electrodes and via electrodes that form connection wiring of the high-frequency circuit section are formed.
- internal electrodes and via electrodes connected to the ground via electrodes 72B and 73B are formed. These internal electrodes and via electrodes are also connected to a bottom electrode 65 for ground.
- ground internal electrodes 72A and 73A are formed in the stacked portion 62 in this way, the ground internal electrodes 72A and 73A are viewed from the top side in the stacking direction as shown in FIG. Inside the stacked portion 62, the end portions are continuous.
- the same effect as that of the first embodiment can be obtained.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
Description
2,42,62…積層部
3,4,45,65…底面電極
5…底面側レジスト部
6…開口部
7…天面電極
8…天面側レジスト部
10…配線領域
11…高周波回路部
12…アンテナ
13,43,63…RF-IC
14,44,64…受動素子
15…低域通過フィルタ回路
16…整合回路
21…外部基板
23,24…部品搭載電極
31,32,33,34,35,36,51,52,53,56,71,72,73,76…基材
32A,33A,34A,35A,52A,53A,54A,55A,72A,73A…グランド用内部電極
32B,33B,34B,35B,52B,53B,54B,55B,72B,73B…グランド用ビア電極
Claims (7)
- 複数の基材を積層方向に積層してなる積層部と、
前記積層部の積層方向の一方主面に設けられている複数の底面電極と、
前記積層部の内部を通過して設けられており、少なくともいずれかの前記底面電極に接続されている高周波回路部と、
それぞれ、前記積層部のいずれかの層間に設けられてグランド用の前記底面電極に接続されており、前記積層部の外縁に沿って前記高周波回路部の外側を延伸する有端線路からなり、前記積層方向から透視すると互いに無端状に連なっている、複数のグランド用内部電極と、
を備える高周波モジュール。 - 前記高周波回路部は、前記積層部の一方主面とは反対側の他方主面に搭載される表面実装型素子を備え、
前記グランド用の底面電極は、積層方向から透視すると前記高周波回路部に重なっている、
請求項1に記載の高周波モジュール。 - 前記複数のグランド用内部電極それぞれの端部は、前記積層方向から透視すると前記積層部の角部分で互いに重なり合っている、
請求項1または2に記載の高周波モジュール。 - 前記積層部は、第1乃至第4の基材を含む立方体であり、
前記複数のグランド用内部電極として、
前記積層方向から視て前記積層部の第1の辺に沿って前記第1の基材に設けられている第1のグランド用内部電極と、
前記第1の辺に直交する第2の辺に沿って前記第2の基材に設けられている第2のグランド用内部電極と、
前記第2の辺に直交する第3の辺に沿って前記第3の基材に設けられている第3のグランド用内部電極と、
前記第3の辺に直交する第4の辺に沿って前記第4の基材に設けられている第4のグランド用内部電極と、
を備える、請求項1~3のいずれかに記載の高周波モジュール。 - 前記第1の基材と前記第2の基材と前記第3の基材と前記第4の基材とは、記載順に従った順番で積層方向に並んでいる、請求項4に記載の高周波モジュール。
- 前記積層部は、第1および第2の基材を含む立方体であり、
前記複数のグランド用内部電極として、
前記積層方向から視て前記積層部の第1の辺に沿って前記第1の基材に設けられている第1のグランド用内部電極と、
前記第1の辺に対して直交する第2の辺に沿って前記第2の基材に設けられている第2のグランド用内部電極と、
前記第2の辺に対して直交する第3の辺に沿って前記第1の基材に設けられている第3のグランド用内部電極と、
前記第3の辺に対して直交する第4の辺に沿って前記第2の基材に設けられている第4のグランド用内部電極と、
を備える、請求項1~3のいずれかに記載の高周波モジュール。 - 前記積層部は、第1および第2の基材を含む立方体であり、
前記複数のグランド用内部電極として、
前記積層方向から視て前記積層部の第1の辺と前記第1の辺に直交する第2の辺とに沿って前記第1の基材に設けられている第1のグランド用内部電極と、
前記第2の辺に直交する第3の辺と前記第3の辺に直交する第4の辺に沿って前記第2の基材に設けられている第2のグランド用内部電極と、を備える、請求項1~3のいずれかに記載の高周波モジュール。
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CN201390000956.0U CN204994110U (zh) | 2012-12-07 | 2013-11-08 | 高频模块 |
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US14/686,922 US9437559B2 (en) | 2012-12-07 | 2015-04-15 | High-frequency module |
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CN113013567A (zh) * | 2021-01-29 | 2021-06-22 | 中国电子科技集团公司第三十八研究所 | 基于siw多馈网络的芯片-封装-天线一体化结构 |
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JP3669255B2 (ja) * | 2000-09-19 | 2005-07-06 | 株式会社村田製作所 | セラミック多層基板の製造方法および未焼成セラミック積層体 |
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US20070215962A1 (en) * | 2006-03-20 | 2007-09-20 | Knowles Elecronics, Llc | Microelectromechanical system assembly and method for manufacturing thereof |
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JPWO2014087792A1 (ja) | 2017-01-05 |
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