WO2014084529A1 - 플렉서블 기판을 포함하는 유기 발광 소자 및 이의 제조방법 - Google Patents
플렉서블 기판을 포함하는 유기 발광 소자 및 이의 제조방법 Download PDFInfo
- Publication number
- WO2014084529A1 WO2014084529A1 PCT/KR2013/010398 KR2013010398W WO2014084529A1 WO 2014084529 A1 WO2014084529 A1 WO 2014084529A1 KR 2013010398 W KR2013010398 W KR 2013010398W WO 2014084529 A1 WO2014084529 A1 WO 2014084529A1
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- WO
- WIPO (PCT)
- Prior art keywords
- organic light
- emitting device
- light emitting
- plastic substrate
- substrate
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract description 137
- 230000009975 flexible effect Effects 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 239000004033 plastic Substances 0.000 claims abstract description 63
- 229920003023 plastic Polymers 0.000 claims abstract description 63
- 229920001721 polyimide Polymers 0.000 claims description 74
- 239000004642 Polyimide Substances 0.000 claims description 56
- 239000011521 glass Substances 0.000 claims description 13
- 238000000605 extraction Methods 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000004381 surface treatment Methods 0.000 claims description 10
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 9
- -1 polyethylene terephthalate Polymers 0.000 claims description 9
- 239000000853 adhesive Substances 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000010030 laminating Methods 0.000 claims description 5
- 229920000089 Cyclic olefin copolymer Polymers 0.000 claims description 4
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 229920005575 poly(amic acid) Polymers 0.000 claims description 4
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims description 4
- 229920001230 polyarylate Polymers 0.000 claims description 4
- 239000004417 polycarbonate Substances 0.000 claims description 4
- 229920000728 polyester Polymers 0.000 claims description 4
- 229920002530 polyetherether ketone Polymers 0.000 claims description 4
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 4
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 4
- 229920000636 poly(norbornene) polymer Polymers 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 2
- 229920000515 polycarbonate Polymers 0.000 claims description 2
- 239000004952 Polyamide Substances 0.000 abstract 2
- 229920002647 polyamide Polymers 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 72
- 239000000463 material Substances 0.000 description 24
- 238000002347 injection Methods 0.000 description 10
- 239000007924 injection Substances 0.000 description 10
- 239000011368 organic material Substances 0.000 description 10
- 239000010408 film Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000011135 tin Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 3
- 239000011575 calcium Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000004549 pulsed laser deposition Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- QENGPZGAWFQWCZ-UHFFFAOYSA-N 3-Methylthiophene Chemical compound CC=1C=CSC=1 QENGPZGAWFQWCZ-UHFFFAOYSA-N 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000011133 lead Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- BCMCBBGGLRIHSE-UHFFFAOYSA-N 1,3-benzoxazole Chemical compound C1=CC=C2OC=NC2=C1 BCMCBBGGLRIHSE-UHFFFAOYSA-N 0.000 description 1
- 239000005725 8-Hydroxyquinoline Substances 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004971 Cross linker Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- UEEXRMUCXBPYOV-UHFFFAOYSA-N iridium;2-phenylpyridine Chemical compound [Ir].C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1 UEEXRMUCXBPYOV-UHFFFAOYSA-N 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000001182 laser chemical vapour deposition Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- SIOXPEMLGUPBBT-UHFFFAOYSA-M picolinate Chemical compound [O-]C(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-M 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920001690 polydopamine Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 150000003413 spiro compounds Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
- B32B27/281—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/06—Interconnection of layers permitting easy separation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/50—Forming devices by joining two substrates together, e.g. lamination techniques
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present application relates to an organic light emitting device including the flexible substrate and a method of manufacturing the same.
- the organic light emitting device is composed of two opposite electrodes and a thin film of organic material having a multilayer semiconductor property therebetween.
- the organic light emitting device having such a configuration uses a phenomenon of converting electrical energy into light energy using an organic material, that is, an organic light emitting phenomenon.
- an organic light emitting phenomenon Specifically, in the structure in which the organic material layer is positioned between the anode and the cathode, when a voltage is applied between the two electrodes, holes are injected into the organic material and electrons are injected into the cathode. When the injected holes and electrons meet, excitons are formed, and when the excitons fall back to the ground, they shine.
- the organic light emitting device As described above, light generated in the organic material layer is emitted through the light transmitting electrode, and the organic light emitting device may be classified into top emission, bottom emission, and double emission.
- the organic light emitting device may be classified into top emission, bottom emission, and double emission.
- one of the two electrodes In the case of the front emission or the bottom emission type, one of the two electrodes must be a light transmissive electrode, and in the case of the double emission type, both electrodes must be the light transmissive electrode.
- the device In order to use an organic light emitting device as an illumination, the device must be driven at a high brightness unlike a conventional color display, and maintain a constant luminance like a conventional lighting. In order to sufficiently improve the luminance of the organic light emitting device, light emission should be performed in a large area, and in order to emit light in such a large area, a high driving current should be used. In addition, in order to maintain a constant brightness in a large area, such a high current must be uniformly injected into the device of a large area.
- It provides a method of manufacturing a flexible organic light emitting device comprising a.
- the present application provides a flexible organic light emitting device, characterized in that manufactured by the method for manufacturing the organic light emitting device.
- a plastic substrate provided on the polyimide layer
- It provides a flexible organic light emitting device comprising a.
- Plastic substrates And an organic light emitting device provided on the plastic substrate.
- At least a portion of the lower surface of the plastic substrate provides a flexible organic light emitting device comprising a silane coupling agent.
- the present application provides a display device including the flexible organic light emitting device.
- the present application provides a lighting device including the flexible organic light emitting device.
- an organic light emitting device comprising a substrate having a flexible characteristic.
- the process of manufacturing the organic light emitting device on the plastic substrate is the same as the process of manufacturing the organic light emitting device on the glass substrate, it is possible to apply the existing process as it is, the plastic substrate freely It is characterized by being removable.
- FIG. 1 is a view schematically showing a method of laminating a plastic substrate on a polyimide layer as one embodiment of the present application.
- FIG. 2 is a view schematically illustrating a cross section of an organic light emitting diode formed on a plastic substrate as one embodiment of the present application.
- FIG 3 is a view schematically illustrating a method of separating a carrier substrate as one embodiment of the present application.
- Polyimides have the advantages of easy synthesis, thin film making, and no crosslinker for curing. Recently, due to the light weight and precision of electronic products, it is widely applied as an integrated material to semiconductor materials such as LCD, PDP, and OLED. In addition, many studies have been made to use polyimide in a flexible plastic display substrate having a light and flexible property to compensate for the heavy and cracking disadvantage of the glass substrate used in the display field.
- an organic light emitting device including a polyimide film forms a polyimide film on a glass substrate, forms an organic light emitting device on the polyimide film, and then separates the organic light emitting device including a polyimide film from the glass substrate.
- a process was needed.
- a detaching technique of separating the organic light emitting device including the polyimide film from the glass substrate without deformation is important.
- the polyimide film formed on the glass substrate has poor adhesion
- a surface treatment such as a silane coupling agent, corona, or plasma is required on the glass substrate in order to enhance adhesion between the glass substrate and the polyimide film.
- a problem may arise that the polyimide film formed on the glass substrate subjected to the surface treatment is difficult to be separated later. Therefore, conventionally, the polyimide film was separated by forming a sacrificial layer under the polyimide film or by irradiating a laser or UV.
- Japanese Laid-Open Patent Publication No. 2011-142168 includes the steps of adding an adhesive only to a peripheral region of a region to which a flexible film of a non-flexible substrate is attached; Attaching a flexible film on the non-flexible substrate and forming a device on the flexible film; And cutting the flexible film on which the device is formed and peeling from the non-flexible substrate.
- the adhesive is added only to the peripheral region of the region to which the soluble film of the non-flexible substrate is attached as described above, warpage may occur depending on the void space formed between the non-flexible substrate and the flexible film. There is a difficulty in forming an organic light emitting device having an area.
- the present application is to simplify the manufacturing process to reduce the process cost, to manufacture a large area organic light emitting device, to provide a method of manufacturing an organic light emitting device including a substrate having a flexible characteristic.
- a method of manufacturing a flexible organic light emitting device may include: 1) forming a polyimide layer on a carrier substrate, and 2) forming a plastic substrate on the carrier substrate and the polyimide layer. 3) forming an organic light emitting device on the plastic substrate, and 4) separating the carrier substrate.
- step 1) is a step of forming a polyimide layer on the carrier substrate.
- the carrier substrate may use a material known in the art. More specifically, the carrier substrate may be a glass substrate, a metal substrate, a plastic substrate and the like, but is not limited thereto.
- the thickness of the carrier substrate may be 0.5 to 0.7 mm, but is not limited thereto.
- the polyimide layer may be formed using a method known in the art. More specifically, the polyimide layer may be formed by a process of laminating a polyimide film on a carrier substrate, or may be formed by coating and curing a polyamic acid composition on a carrier substrate. In addition, the polyimide may be formed by screen printing, but is not limited thereto.
- the polyimide layer is excellent in chemical resistance, heat resistance, and the like, it may be advantageous to a photo process that is performed later in manufacturing the organic light emitting device.
- Step 1) may further include patterning the polyimide layer. That is, the polyimide layer may be formed only in a region where the organic light emitting diode is formed later on the carrier substrate.
- step 2) is a step of forming a plastic substrate on the carrier substrate and the polyimide layer.
- the method may further include adding an adhesive force between the carrier substrate and the plastic substrate of step 2) and between the polyimide layer and the plastic substrate.
- the adding of the adhesive force may use a silane coupling agent surface treatment, a corona surface treatment, or a plasma surface treatment method on the carrier substrate and the polyimide layer.
- the surface treatment may be performed on the upper surface of the carrier substrate and the polyimide layer. The surface treatment is for enhancing the adhesion between the carrier substrate and the plastic substrate.
- the plastic substrate is PET (polyethylene terephthalate), polyester (polyester), PC (polycarbonate), PI (polyimide), PEN (polyethylene naphthalate), PEEK (polyether ether ketone), PAR (polyarylate), PCO (polycylicolefin), poly It may be selected from the group consisting of norbornene (polynorbornene), polyethersulphone (PES) and cycloolefin polymer (COP), but is not limited thereto.
- step 2) it may proceed to the process of laminating the plastic substrate on the carrier substrate and the polyimide layer.
- the polyamic acid composition may be coated and cured on the carrier substrate and the polyimide layer to form a polyimide film.
- FIG. 1 schematically shows a method of laminating a polyimide film on a photosensitive polyimide.
- the plastic substrate may have a larger area than the polyimide layer.
- the plastic substrate may have the same area as the glass substrate, but is not limited thereto. That is, a region without a polyimide layer below the plastic substrate may be strongly attached directly to the carrier substrate on which the plastic substrate is surface-treated, and the polyimide layer on the plastic substrate and the surface-treated polyimide layer may be relatively weakly attached. Since the plastic substrate and the surface-treated polyimide layer are relatively weakly attached to each other, the carrier substrate, the polyimide layer, and the like can be easily separated later. In particular, the region having a width of 5 to 10 mm of the edge region corresponding to the edge region of the carrier substrate may be strongly attached to the surface-treated carrier substrate and the plastic substrate.
- the region without the polyimide layer on the lower portion of the plastic substrate can be strongly adhered directly to the carrier substrate on which the plastic substrate is surface-treated, and thus can sufficiently withstand the photo, deposition process, etc., which are performed in the formation of the organic light emitting device in the future. Adhesion can be maintained even at high temperatures of 250 ° C or higher.
- step 3) is a step of forming an organic light emitting device on the plastic substrate.
- the organic light emitting diode may include an anode, one or more organic material layers, and a cathode.
- the anode may be formed of one or more selected from magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, gadolinium, aluminum, platinum, gold, tungsten, tantalum, copper, silver, tin, and lead.
- the anode may also be formed of a transparent conductive oxide.
- the transparent conductive oxide may be formed of indium (In), tin (Sn), zinc (Zn), gallium (Ga), cerium (Ce), cadmium (Cd), magnesium (Mg), beryllium (Be), and silver (Ag). ), Molybdenum (Mo), vanadium (V), copper (Cu), iridium (Ir), rhodium (Rh), ruthenium (Ru), tungsten (W), cobalt (Co), nickel (Ni), manganese ( Mn), at least one oxide selected from aluminum (Al), and lanthanum (La).
- the anode is sputtering, e-beam evaporation, thermal evaporation, laser molecular beam epitaxy (L-MBE), and pulsed laser deposition (Pulsed Laser Deposition).
- PLD any one of the physical vapor deposition method (Physical Vapor Deposition, PVD); Thermal Chemical Vapor Deposition, Plasma-Enhanced Chemical Vapor Deposition (PECVD), Light Chemical Vapor Deposition, Laser Chemical Vapor Deposition, Metal- Chemical Vapor Deposition selected from any one of an Organic Chemical Vapor Deposition (MOCVD) and a Hydride Vapor Phase Epitaxy (HVPE);
- the layer may be formed using atomic layer deposition (ALD).
- auxiliary electrode may be further included to improve resistance of the anode.
- the auxiliary electrode may be formed of at least one selected from the group consisting of a conductive sealant and a metal using a deposition process or a printing process. More specifically, the auxiliary electrode may include Cr, Mo, Al, Cu, alloys thereof, and the like, but is not limited thereto.
- An insulating layer may be further included on the auxiliary electrode.
- the insulating layer may be formed using materials and methods known in the art. More specifically, common photoresist materials; Polyimide; Polyacrylic; Silicon nitride; Silicon oxide; Aluminum oxide; Aluminum nitride; Alkali metal oxides; It may be formed using an alkaline earth metal oxide or the like, but is not limited thereto.
- the thickness of the insulating layer may be 10 nm to 10 ⁇ m, but is not limited thereto.
- organic material layer is not particularly limited, and materials and formation methods well known in the art may be used.
- the organic layer may be formed into a smaller number of layers by using a variety of polymer materials, but not by a deposition process such as spin coating, dip coating, doctor blading, screen printing, inkjet printing or thermal transfer. It can manufacture.
- the organic material layer may include a light emitting layer, and may have a stacked structure including at least one selected from a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer.
- the hole injection material As a material capable of forming the hole injection layer, a material having a large work function is usually preferred to facilitate hole injection into the organic material layer.
- the hole injection material include metals such as vanadium, chromium, copper, zinc and gold or alloys thereof; Metal oxides such as zinc oxide, indium oxide, indium tin oxide (ITO), indium zinc oxide (IZO); A combination of a metal and an oxide such as ZnO: Al or SnO 2 : Sb; Conductive polymers such as poly (3-methylthiophene), poly [3,4- (ethylene-1,2-dioxy) thiophene] (PEDT), polypyrrole and polyaniline, and the like, but are not limited thereto.
- the material capable of forming the electron injection layer it is usually preferable that the material has a small work function to facilitate electron injection into the organic material layer.
- the electron injection material include metals such as magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, gadolinium, aluminum, silver, tin, and lead or alloys thereof; Multilayer structure materials such as LiF / Al or LiO 2 / Al, and the like, and the same material as the hole injection electrode material may be used, but is not limited thereto.
- a material capable of forming the light emitting layer a material capable of emitting light in the visible region by transporting and combining holes and electrons from the hole transporting layer and the electron transporting layer, respectively, is preferably a material having good quantum efficiency with respect to fluorescence or phosphorescence.
- Specific examples thereof include 8-hydroxyquinoline aluminum complex (Alq 3 ); Carbazole series compounds; Dimerized styryl compounds; BAlq; 10-hydroxybenzoquinoline-metal compound; Benzoxazole, benzthiazole and benzimidazole series compounds; Poly (p-phenylenevinylene) (PPV) -based polymers; Spiro compounds; Polyfluorene, rubrene; Phosphorescent host CBP [[4,4'-bis (9-carbazolyl) biphenyl]; Etc., but is not limited thereto.
- the light emitting material may further include a phosphorescent dopant or a fluorescent dopant to improve fluorescence or phosphorescent properties.
- a phosphorescent dopant include ir (ppy) (3) (fac tris (2-phenylpyridine) iridium) or F2Irpic [iridium (III) bis (4,6-di-fluorophenyl-pyridinato-N, C2) picolinate] Etc.
- the fluorescent dopant those known in the art may be used.
- the material capable of forming the electron transport layer a material capable of injecting electrons well from the electron injection layer and transferring the electrons to the light emitting layer is suitable.
- Specific examples include Al complexes of 8-hydroxyquinoline; Complexes including Alq 3 ; Organic radical compounds; Hydroxyflavone-metal complexes and the like, but are not limited thereto.
- the cathode may include one or more of Al, Ag, Ca, Mg, Au, Mo, Ir, Cr, Ti, Pd, alloys thereof, and the like, but is not limited thereto.
- FIG. 2 schematically shows a cross section of an organic light emitting device formed on a plastic substrate.
- the method may further include encapsulating the organic light emitting device after the step 3).
- the encapsulation is to prevent foreign substances such as oxygen and moisture from penetrating into the organic light emitting device, and may be performed using materials, methods, and the like known in the art.
- the encapsulation process may be performed by forming a sealing part covering the outside of the organic light emitting device.
- the material is not specifically limited.
- the outside of the organic light emitting device may be pressed with an encapsulation film, or a metal or metal oxide may be deposited to form a seal, or the resin composition may be coated and cured to form a seal.
- the sealing part may be formed by depositing a metal or a metal oxide by atomic layer deposition.
- the metal layer or the metal oxide layer formed may have a structure of two or more layers.
- step 4) is a step of separating the carrier substrate.
- FIG. 3 schematically shows a method of separating the carrier substrate.
- the present application provides an organic light emitting device manufactured by the method of manufacturing the organic light emitting device.
- the flexible organic light emitting device a polyimide layer; A plastic substrate provided on the polyimide layer; And an organic light emitting device provided on the plastic substrate.
- At least a portion between the polyimide layer and the plastic substrate may further include a silane coupling agent.
- the silane coupling agent may play a role of improving adhesion between the polyimide layer and the plastic substrate.
- the flexible organic light emitting device according to another embodiment of the present application, a plastic substrate; And an organic light emitting device provided on the plastic substrate, and at least a portion of a lower surface of the plastic substrate includes a silane coupling agent.
- the details of the polyimide layer, the plastic substrate, the organic light emitting device, and the like are the same as described above, and a detailed description thereof will be omitted.
- the flexible organic light emitting diode according to the present application may include a light extraction structure. More specifically, the light extraction layer may be further included between the plastic substrate and the organic light emitting device.
- the light extraction layer is not particularly limited so long as it has a structure capable of inducing light scattering to improve light extraction efficiency of the organic light emitting device. More specifically, the light extraction layer may have a structure in which scattering particles are dispersed in a binder.
- the light extraction layer may be formed directly on the substrate by a method such as spin coating, bar coating, slit coating, or the like by forming and attaching a film.
- the light extraction layer may further include a flat layer.
- the present application provides a display device including the organic light emitting device.
- the organic light emitting diode may serve as a pixel or a backlight.
- Other configurations of the display apparatus may include those known in the art.
- the present application provides a lighting device including the organic light emitting device.
- the organic light emitting element serves as a light emitting unit.
- Other configurations required for the lighting device may be applied to those known in the art.
- an organic light emitting device comprising a substrate having a flexible characteristic.
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Abstract
Description
Claims (26)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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US14/647,758 US9871228B2 (en) | 2012-11-30 | 2013-11-15 | Organic light emitting device comprising flexible substrate and method for preparing thereof |
EP13857827.3A EP2927982B1 (en) | 2012-11-30 | 2013-11-15 | Organic light-emitting device including flexible substrate, and method for manufacturing same |
JP2015545352A JP6417330B2 (ja) | 2012-11-30 | 2013-11-15 | フレキシブル基板を含む有機発光素子およびその製造方法 |
CN201380062613.1A CN104854722B (zh) | 2012-11-30 | 2013-11-15 | 包括柔性基板的有机发光器件及其制备方法 |
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KR10-2012-0138336 | 2012-11-30 | ||
KR20120138336 | 2012-11-30 |
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WO2014084529A1 true WO2014084529A1 (ko) | 2014-06-05 |
Family
ID=50828109
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PCT/KR2013/010398 WO2014084529A1 (ko) | 2012-11-30 | 2013-11-15 | 플렉서블 기판을 포함하는 유기 발광 소자 및 이의 제조방법 |
Country Status (7)
Country | Link |
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US (1) | US9871228B2 (ko) |
EP (1) | EP2927982B1 (ko) |
JP (1) | JP6417330B2 (ko) |
KR (1) | KR101445044B1 (ko) |
CN (1) | CN104854722B (ko) |
TW (1) | TWI523295B (ko) |
WO (1) | WO2014084529A1 (ko) |
Cited By (4)
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CN107195658B (zh) * | 2017-05-25 | 2020-01-21 | 上海天马微电子有限公司 | 柔性基板及其制作方法 |
US10658592B2 (en) | 2017-07-31 | 2020-05-19 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Method for fabricating flexible display device, flexible display device, and display apparatus |
WO2019049235A1 (ja) * | 2017-09-06 | 2019-03-14 | シャープ株式会社 | 表示デバイスの製造方法及び表示デバイスの製造装置 |
TW202022059A (zh) | 2018-09-11 | 2020-06-16 | 南韓商Lg化學股份有限公司 | 用於製造可撓性顯示器之疊層結構以及使用其製造可撓性顯示器的方法 |
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CN110132315A (zh) * | 2019-04-08 | 2019-08-16 | 清华大学深圳研究生院 | 一种柔性传感器及其制备方法和可穿戴智能设备 |
CN111755632B (zh) * | 2020-07-30 | 2022-07-19 | 河南工程学院 | 一种柔性有机电致发光器件及其制备方法 |
WO2022182167A2 (ko) * | 2021-02-25 | 2022-09-01 | 동우 화인켐 주식회사 | 엘이디 조명 장치 및 그 제조 방법 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030007571A (ko) * | 2000-06-16 | 2003-01-23 | 유니티카 가부시끼가이샤 | 플렉시블프린트 배선판용 기판의 제조방법 및플렉시블프린트 배선판용 기판 |
KR20080020024A (ko) * | 2006-08-30 | 2008-03-05 | 한국전자통신연구원 | 플렉시블 기판의 적층 방법 |
US20100267203A1 (en) * | 2009-04-17 | 2010-10-21 | Industrial Technology Research Institute | Method for isolating flexible film from support substrate |
US20110003442A1 (en) * | 2009-07-03 | 2011-01-06 | Tsinghua University | Method for manufacturing flexible semiconductor device |
JP2011142168A (ja) | 2010-01-06 | 2011-07-21 | Fujifilm Corp | 電子デバイスの製造方法および該電子デバイスに用いられる基板 |
KR20110122250A (ko) * | 2010-05-04 | 2011-11-10 | 부산대학교 산학협력단 | 외부 광 추출 효율을 향상시킨 유기 발광 소자 및 그 제조방법 |
KR20120053601A (ko) * | 2010-11-18 | 2012-05-29 | 엘지디스플레이 주식회사 | 플렉서블 표시장치의 제조 방법 |
KR20120100274A (ko) * | 2011-03-03 | 2012-09-12 | 엘지디스플레이 주식회사 | 플렉시블 표시장치의 제조 방법 |
KR20120106659A (ko) * | 2011-03-18 | 2012-09-26 | 이터널 케미칼 컴퍼니 리미티드 | 플렉서블 장치의 제조 방법 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002198374A (ja) * | 2000-10-16 | 2002-07-12 | Sharp Corp | 半導体装置およびその製造方法 |
US8057903B2 (en) * | 2001-11-30 | 2011-11-15 | Sabic Innovative Plastics Ip B.V. | Multilayer articles comprising resorcinol arylate polyester and method for making thereof |
US20060043343A1 (en) * | 2004-08-24 | 2006-03-02 | Chacko Antony P | Polymer composition and film having positive temperature coefficient |
DE102006055067B4 (de) * | 2005-12-29 | 2017-04-20 | Lg Display Co., Ltd. | Organische Dünnfilmtransistoren und Verfahren zu deren Herstellung |
KR101330456B1 (ko) * | 2006-12-12 | 2013-11-15 | 엘지디스플레이 주식회사 | 플렉서블 디스플레이의 제조 장치 및 이를 이용한 플렉서블디스플레이의 제조 방법 |
JP5150138B2 (ja) | 2007-05-23 | 2013-02-20 | 株式会社ジャパンディスプレイイースト | 表示装置の製造方法 |
US7674689B2 (en) * | 2007-09-20 | 2010-03-09 | Infineon Technologies Ag | Method of making an integrated circuit including singulating a semiconductor wafer |
JP5707136B2 (ja) * | 2008-03-07 | 2015-04-22 | エルジー・ケム・リミテッド | ポジティブ型感光性ポリイミド組成物 |
WO2009116531A1 (ja) | 2008-03-18 | 2009-09-24 | 旭硝子株式会社 | 電子デバイス用基板、有機led素子用積層体及びその製造方法、有機led素子及びその製造方法 |
KR101500684B1 (ko) * | 2008-04-17 | 2015-03-10 | 삼성디스플레이 주식회사 | 캐리어 기판 및 이를 이용한 가요성 표시 장치의 제조 방법 |
JP2009283155A (ja) | 2008-05-19 | 2009-12-03 | Seiko Epson Corp | 表示装置の製造方法、表示装置および電子機器 |
TWI354854B (en) | 2008-09-15 | 2011-12-21 | Ind Tech Res Inst | Substrate structures applied in flexible electrica |
KR101009415B1 (ko) | 2008-11-18 | 2011-01-19 | 삼성모바일디스플레이주식회사 | 플라스틱 기판을 구비한 전자장치 제조방법, 이에 의해 제조된 전자장치 및 상기 제조방법에 사용되는 장치 |
KR101495398B1 (ko) * | 2008-12-02 | 2015-02-25 | 아리조나 보드 오브 리젠츠 온 비하프 오브 아리조나 스테이트 유니버시티 | 유연성 기판 조립체의 제조 방법 및 그것으로부터의 유연성 기판 조립체 |
US8273439B2 (en) | 2008-12-08 | 2012-09-25 | Industrial Technology Research Institute | Release layer materials, substrate structures comprising the same and fabrication method thereof |
JP5126555B2 (ja) * | 2008-12-19 | 2013-01-23 | 東洋紡株式会社 | 積層体およびその製造方法、積層体回路板 |
KR101029299B1 (ko) * | 2008-12-30 | 2011-04-18 | 서울대학교산학협력단 | 유기 발광 소자 및 그 제조 방법 |
TWI501696B (zh) * | 2009-02-13 | 2015-09-21 | Tokyo Polytechnic University | An image display device and an organic electroluminescent element |
TWI421809B (zh) * | 2009-04-17 | 2014-01-01 | Ind Tech Res Inst | 可撓曲基板自載板上脫離的方法及可撓式電子裝置的製造方法 |
JP5723776B2 (ja) * | 2009-09-08 | 2015-05-27 | 旭硝子株式会社 | ガラス/樹脂積層体の製造方法 |
WO2011046190A1 (ja) * | 2009-10-15 | 2011-04-21 | 旭硝子株式会社 | 有機led素子、有機led素子の散乱層用のガラスフリット及び有機led素子の散乱層の製造方法 |
US8538224B2 (en) * | 2010-04-22 | 2013-09-17 | 3M Innovative Properties Company | OLED light extraction films having internal nanostructures and external microstructures |
US20110291544A1 (en) | 2010-05-31 | 2011-12-01 | Industrial Technology Research Institute | Gas barrier substrate, package of organic electro-luminenscent device and packaging method thereof |
KR101783781B1 (ko) * | 2010-07-05 | 2017-10-11 | 삼성디스플레이 주식회사 | 평판 표시 장치 및 그 제조방법 |
TW201228807A (en) * | 2011-01-13 | 2012-07-16 | Moser Baer India Ltd | Method of imprinting a texture on a rigid substrate using flexible stamp |
JP2012178268A (ja) | 2011-02-25 | 2012-09-13 | Mitsubishi Chemicals Corp | 有機電界発光素子、有機電界発光モジュール、有機電界発光表示装置、及び有機電界発光照明 |
JP5355618B2 (ja) * | 2011-03-10 | 2013-11-27 | 三星ディスプレイ株式會社 | 可撓性表示装置及びこの製造方法 |
JP5906574B2 (ja) | 2011-03-29 | 2016-04-20 | 大日本印刷株式会社 | フレキシブルデバイス用基板及びその製造方法 |
CN103502005B (zh) | 2011-04-15 | 2015-05-06 | 东洋纺株式会社 | 层叠体、其制造方法及使用其的器件结构体的制造方法 |
US20130115426A1 (en) * | 2011-11-09 | 2013-05-09 | Au Optronics Corporation | Method of manufacturing flexible electronic device |
-
2013
- 2013-11-15 KR KR1020130139112A patent/KR101445044B1/ko active IP Right Grant
- 2013-11-15 JP JP2015545352A patent/JP6417330B2/ja active Active
- 2013-11-15 TW TW102141682A patent/TWI523295B/zh active
- 2013-11-15 CN CN201380062613.1A patent/CN104854722B/zh active Active
- 2013-11-15 EP EP13857827.3A patent/EP2927982B1/en active Active
- 2013-11-15 US US14/647,758 patent/US9871228B2/en active Active
- 2013-11-15 WO PCT/KR2013/010398 patent/WO2014084529A1/ko active Application Filing
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030007571A (ko) * | 2000-06-16 | 2003-01-23 | 유니티카 가부시끼가이샤 | 플렉시블프린트 배선판용 기판의 제조방법 및플렉시블프린트 배선판용 기판 |
KR20080020024A (ko) * | 2006-08-30 | 2008-03-05 | 한국전자통신연구원 | 플렉시블 기판의 적층 방법 |
US20100267203A1 (en) * | 2009-04-17 | 2010-10-21 | Industrial Technology Research Institute | Method for isolating flexible film from support substrate |
US20110003442A1 (en) * | 2009-07-03 | 2011-01-06 | Tsinghua University | Method for manufacturing flexible semiconductor device |
JP2011142168A (ja) | 2010-01-06 | 2011-07-21 | Fujifilm Corp | 電子デバイスの製造方法および該電子デバイスに用いられる基板 |
KR20110122250A (ko) * | 2010-05-04 | 2011-11-10 | 부산대학교 산학협력단 | 외부 광 추출 효율을 향상시킨 유기 발광 소자 및 그 제조방법 |
KR20120053601A (ko) * | 2010-11-18 | 2012-05-29 | 엘지디스플레이 주식회사 | 플렉서블 표시장치의 제조 방법 |
KR20120100274A (ko) * | 2011-03-03 | 2012-09-12 | 엘지디스플레이 주식회사 | 플렉시블 표시장치의 제조 방법 |
KR20120106659A (ko) * | 2011-03-18 | 2012-09-26 | 이터널 케미칼 컴퍼니 리미티드 | 플렉서블 장치의 제조 방법 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2927982A4 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2016010003A1 (ja) * | 2014-07-17 | 2017-04-27 | 旭化成株式会社 | 樹脂前駆体及びそれを含有する樹脂組成物、ポリイミド樹脂膜、樹脂フィルム及びその製造方法 |
CN104934371A (zh) * | 2015-03-09 | 2015-09-23 | 友达光电股份有限公司 | 可挠式显示面板及其制作方法 |
CN104934371B (zh) * | 2015-03-09 | 2017-10-24 | 友达光电股份有限公司 | 可挠式显示面板及其制作方法 |
CN107464893A (zh) * | 2017-07-31 | 2017-12-12 | 武汉华星光电半导体显示技术有限公司 | 柔性显示器件的制备方法、柔性显示器件及显示器 |
CN110739337A (zh) * | 2019-10-24 | 2020-01-31 | 云谷(固安)科技有限公司 | 柔性基板、显示面板及显示面板的制备方法 |
Also Published As
Publication number | Publication date |
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EP2927982A1 (en) | 2015-10-07 |
CN104854722B (zh) | 2017-09-22 |
EP2927982A4 (en) | 2016-12-07 |
KR20140076485A (ko) | 2014-06-20 |
TWI523295B (zh) | 2016-02-21 |
JP6417330B2 (ja) | 2018-11-07 |
EP2927982B1 (en) | 2024-05-08 |
CN104854722A (zh) | 2015-08-19 |
TW201432977A (zh) | 2014-08-16 |
JP2015536555A (ja) | 2015-12-21 |
US20150303408A1 (en) | 2015-10-22 |
US9871228B2 (en) | 2018-01-16 |
KR101445044B1 (ko) | 2014-09-26 |
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