WO2014057906A1 - 窒化物半導体装置およびその製造方法 - Google Patents
窒化物半導体装置およびその製造方法 Download PDFInfo
- Publication number
- WO2014057906A1 WO2014057906A1 PCT/JP2013/077233 JP2013077233W WO2014057906A1 WO 2014057906 A1 WO2014057906 A1 WO 2014057906A1 JP 2013077233 W JP2013077233 W JP 2013077233W WO 2014057906 A1 WO2014057906 A1 WO 2014057906A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- nitride semiconductor
- semiconductor device
- electron transit
- electron
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 208
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 199
- 238000000034 method Methods 0.000 title claims description 50
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 239000000203 mixture Substances 0.000 claims abstract description 163
- 239000010410 layer Substances 0.000 claims description 869
- 229910002704 AlGaN Inorganic materials 0.000 claims description 173
- 229910052782 aluminium Inorganic materials 0.000 claims description 119
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 112
- 238000002955 isolation Methods 0.000 claims description 89
- 239000000758 substrate Substances 0.000 claims description 60
- 238000005468 ion implantation Methods 0.000 claims description 50
- 239000013078 crystal Substances 0.000 claims description 38
- 239000011229 interlayer Substances 0.000 claims description 32
- 238000005530 etching Methods 0.000 claims description 28
- 238000007254 oxidation reaction Methods 0.000 claims description 21
- 229910052760 oxygen Inorganic materials 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 150000002500 ions Chemical class 0.000 claims description 20
- 230000003647 oxidation Effects 0.000 claims description 20
- 230000007547 defect Effects 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 11
- 229910052733 gallium Inorganic materials 0.000 claims description 11
- 230000001590 oxidative effect Effects 0.000 claims description 10
- 239000001307 helium Substances 0.000 claims description 9
- 229910052734 helium Inorganic materials 0.000 claims description 9
- -1 helium ions Chemical class 0.000 claims description 9
- 230000001133 acceleration Effects 0.000 claims description 7
- 230000007423 decrease Effects 0.000 claims description 7
- 238000001312 dry etching Methods 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims description 7
- 238000002513 implantation Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 238000013459 approach Methods 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 45
- 229910002601 GaN Inorganic materials 0.000 description 43
- 230000005533 two-dimensional electron gas Effects 0.000 description 43
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 31
- 238000002161 passivation Methods 0.000 description 30
- 230000000052 comparative effect Effects 0.000 description 18
- 230000006378 damage Effects 0.000 description 18
- 230000008569 process Effects 0.000 description 16
- 238000000231 atomic layer deposition Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 12
- 230000010287 polarization Effects 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 8
- 238000005036 potential barrier Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000013642 negative control Substances 0.000 description 2
- 238000000879 optical micrograph Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02241—III-V semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02694—Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28264—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
- H01L21/30621—Vapour phase etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66242—Heterojunction transistors [HBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66522—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with an active layer made of a group 13/15 material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
Abstract
Description
B1項~B32項の少なくとも1項に記載した特徴に対して、A1項~A25項の少なくとも1項に記載した特徴を組み合わせてもよい。すなわち、B1項~B32項の特徴とA1項~A25項の特徴とを任意に組み合わせた窒化物半導体装置を構成することができる。
本発明の実施形態について詳細に説明してきたが、これらは本発明の技術的内容を明らかにするために用いられた具体例に過ぎず、本発明はこれらの具体例に限定して解釈されるべきではなく、本発明の範囲は添付の請求の範囲によってのみ限定される。
103 電子走行層
104 電子供給層
105 パッシベーション膜
106 ソース電極
107 ドレイン電極
108 ゲート電極
109 リセス
109a 底部
109b 側壁部
110 ゲート絶縁膜
111 熱酸化膜
111a 底部被覆部
111b 側壁被覆部
115 二次元電子ガス
DR 素子領域
1 基板
2 バッファ層
3 電子走行層
4 電子供給層
5 キャップ層
6 ソース電極
7 ドレイン電極
8 ゲート電極
9 パッシベーション膜
10 ゲート絶縁膜
11 二次元電子ガス
12 層間絶縁膜
13 素子分離層
16 ソース配線膜
17 ドレイン配線膜
18 ゲート配線膜
21 AlNバッファ層
22 AlGaNバッファ層
221 第1AlGaN層(高アルミニウム組成)
222 第2AlGaN層(低アルミニウム組成)
Claims (57)
- 窒化物半導体からなる電子走行層と、
前記電子走行層上に形成され、前記電子走行層とは組成の異なる窒化物半導体からなり、表面から前記電子走行層に達するリセスを有する電子供給層と、
前記リセス内で露出する前記電子走行層の表面に形成された熱酸化膜と、
前記熱酸化膜に接するように前記リセス内に埋め込まれたゲート絶縁膜と、
前記ゲート絶縁膜上に形成され、前記熱酸化膜および前記ゲート絶縁膜を挟んで前記電子走行層に対向するゲート電極と、
前記ゲート電極を挟むように間隔を開けて前記電子供給層上に設けられたソース電極およびドレイン電極と、
を含む窒化物半導体装置。 - 前記熱酸化膜がGaおよびOを含む、請求項1に記載の窒化物半導体装置。
- 前記熱酸化膜は、膜中の酸素濃度が、膜厚方向に対して勾配を有している、請求項1または2に記載の窒化物半導体装置。
- 前記熱酸化膜中の酸素濃度は、前記ゲート絶縁膜との界面において最大であり、前記電子走行層に向かうに従って小さくなる、請求項1~3のいずれか一項に記載の窒化物半導体装置。
- 前記熱酸化膜中の最大酸素濃度は、1020cm-3以下である、請求項1~4のいずれか一項に記載の窒化物半導体装置。
- 前記熱酸化膜の膜厚が前記ゲート絶縁膜の膜厚よりも小さい、請求項1~5のいずれか一項に記載の窒化物半導体装置。
- 前記ゲート絶縁膜の膜厚が前記熱酸化膜の膜厚のほぼ2倍である、請求項1~6のいずれか一項に記載の窒化物半導体装置。
- 前記熱酸化膜の膜厚が1nm~100nmである、請求項1~7のいずれか一項に記載の窒化物半導体装置。
- 前記熱酸化膜が前記リセス内で露出する前記電子走行層の表面に形成された第1部分と、前記リセス内で露出する前記電子供給層の表面に形成された第2部分とを含み、前記第1部分と前記第2部分との膜厚が異なっている、請求項1~8のいずれか一項に記載の窒化物半導体装置。
- 窒化物半導体からなる電子走行層と、
前記電子走行層上に形成され、前記電子走行層とは組成の異なる窒化物半導体からなり、表面から前記電子走行層に達するリセスを有する電子供給層と、
前記リセス内に埋め込まれたゲート絶縁膜と、
前記ゲート絶縁膜上に形成され、前記ゲート絶縁膜を挟んで前記電子走行層に対向するゲート電極と、
前記ゲート電極を挟むように間隔を開けて前記電子供給層上に設けられたソース電極およびドレイン電極と、
を含み、
前記ゲート絶縁膜の前記ゲート電極とは反対側の表面におけるB、Cl、Siの濃度がいずれも1020cm-3以下である、窒化物半導体装置。 - 前記ゲート絶縁膜の比誘電率が、前記電子供給層の比誘電率よりも高い、請求項1~10のいずれか一項に記載の窒化物半導体装置。
- 前記ゲート絶縁膜が、ALD法によって形成された絶縁膜である、請求項1~11のいずれか一項に記載の窒化物半導体装置。
- 前記ゲート絶縁膜が、Al2O3からなる、請求項1~12のいずれか一項に記載の窒化物半導体装置。
- 前記ゲート絶縁膜は、前記リセスの最底部において、膜厚のほぼ半分が前記電子走行層および前記電子供給層の界面よりも前記電子走行層側に位置している、請求項1~13のいずれか一項に記載の窒化物半導体装置。
- 前記ゲート絶縁膜の膜厚が、5nm~50nmである、請求項1~14のいずれか一項に記載の窒化物半導体装置。
- 前記電子走行層の膜厚が、50nm~2000nmである、請求項1~15のいずれか一項に記載の窒化物半導体装置。
- 前記電子走行層がGaNからなり、前記電子供給層がAlGaNからなる、請求項1~16のいずれか一項に記載の窒化物半導体装置。
- 窒化物半導体からなる電子走行層を形成する工程と、
前記電子走行層上に、前記電子走行層とは組成の異なる窒化物半導体からなる電子供給層を形成する工程と、
前記電子供給層を前記電子走行層が露出するまでエッチングしてリセスを形成する工程と、
前記リセスにおいて露出する電子走行層の表面を熱酸化する工程と、
前記リセス内に絶縁物を埋め込んでゲート絶縁膜を形成する工程と、
前記リセス内の前記ゲート絶縁膜を挟んで前記電子走行層に対向するゲート電極を形成する工程と、
前記ゲート電極を挟んで離隔した位置に前記電子供給層に接するソース電極およびドレイン電極を形成する工程と、
を含む、窒化物半導体装置の製造方法。 - 前記熱酸化工程によって、前記リセス内で露出する前記電子走行層の表面に熱酸化膜が形成される、請求項18に記載の窒化物半導体装置の製造方法。
- 前記熱酸化工程によって、前記リセス内で露出する電子走行層および前記電子供給層の表面に熱酸化膜が形成される、請求項18に記載の窒化物半導体装置の製造方法。
- 前記熱酸化膜が、GaおよびOを含む、請求項19または20に記載の窒化物半導体装置の製造方法。
- 前記リセスを形成するためのエッチングが、B、Cl、Siのうちの少なくとも一種の元素を含むエッチング剤を用いたドライエッチングである、請求項18~21のいずれか一項に記載の窒化物半導体装置の製造方法。
- 前記ゲート絶縁膜の前記電子走行層側の表面におけるB、Cl、Siの濃度が1020cm-3以下である、請求項18~22のいずれか一項に記載の窒化物半導体装置の製造方法。
- 前記ゲート絶縁膜を形成する工程が、絶縁物をALD法によって形成する工程である、請求項18~23のいずれか一項に記載の窒化物半導体装置の製造方法。
- 前記絶縁物がAl2O3である、請求項24に記載の窒化物半導体装置の製造方法。
- 基板と、
前記基板上に形成され、窒化物半導体からなる電子走行層と、
前記電子走行層上に形成され、前記電子走行層とは組成の異なる窒化物半導体からなる電子供給層と、
前記基板と前記電子走行層との間に介在され、アルミニウム組成が相対的に高い高アルミニウム組成領域と、前記高アルミニウム組成領域よりもアルミニウム組成が低く、かつ前記高アルミニウム組成領域よりも前記電子走行層に近い領域に配置された低アルミニウム組成領域とを有するAlGaN層バッファ層と、
イオン注入によって結晶欠陥を引き起こして高抵抗化した領域からなり、前記電子供給層および前記電子走行層を貫通して前記AlGaNバッファ層に達する素子分離層と、を含む、窒化物半導体装置。 - 前記AlGaNバッファ層は、前記基板から前記電子走行層に向かう層厚方向に関して、前記電子走行層に近づくほどアルミニウム組成が小さくなるようにアルミニウム組成を調整したAlGaN層である、請求項26に記載の窒化物半導体装置。
- 前記AlGaNバッファ層が、第1アルミニウム組成の第1アルミニウム組成AlGaN層と、前記第1アルミニウム組成AlGaN層よりも前記電子走行層側に積層され、前記第1アルミニウム組成よりも小さな第2アルミニウム組成の第2アルミニウム組成AlGaN層とを含み、前記高アルミニウム組成領域が前記第1アルミニウム組成AlGaN層を含み、前記低アルミニウム組成領域が前記第2アルミニウム組成AlGaN層を含む、請求項26または27に記載の窒化物半導体装置。
- 前記AlGaNバッファ層と前記基板との間に介在されたAlNバッファ層をさらに含む、請求項26~28のいずれか一項に記載の窒化物半導体装置。
- 前記素子分離層が、素子領域を取り囲むように形成されている、請求項26~29のいずれか一項に記載の窒化物半導体装置。
- 前記素子分離層の上に配置された配線をさらに含む、請求項26~30のいずれか一項に記載の窒化物半導体装置。
- 前記素子分離層が、複数の素子領域を分離するように形成されており、
前記複数の素子領域にそれぞれ形成された複数の素子の間を接続する素子間配線をさらに含む、請求項26~31のいずれか一項に記載の窒化物半導体装置。 - 前記複数の素子領域にそれぞれ形成された複数の素子が異なる機能を有する2以上の素子を含む、請求項32に記載の窒化物半導体装置。
- 前記複数の素子領域にそれぞれ形成された複数の素子が共通の機能を有する2つ以上の素子を含む、請求項32または33に記載の窒化物半導体装置。
- 前記素子間配線によって接続された複数の素子の素子領域を取り囲むように前記素子分離層が形成されている、請求項32~34のいずれか一項に記載の窒化物半導体装置。
- 前記素子分離層が、質量数が10より小さく2より大きい元素を材料とするイオンの注入によって形成された高抵抗層である、請求項26~35のいずれか一項に記載の窒化物半導体装置。
- 前記素子分離層が、ヘリウムイオンの注入によって形成された高抵抗層である、請求項26~35のいずれか一項に記載の窒化物半導体装置。
- 前記素子分離層が、複数の加速エネルギーを用いたイオン注入によって形成された高抵抗層である、請求項26~37のいずれか一項に記載の窒化物半導体装置。
- 前記素子分離層が、前記電子走行層の厚さ方向に対して傾斜した方向からのイオン注入によって形成された高抵抗層である、請求項26~38のいずれか一項に記載の窒化物半導体装置。
- 前記イオン注入方向の前記電子走行層の厚さ方向に対する傾斜角が5~10度である、請求項39に記載の窒化物半導体装置。
- 前記電子走行層がGaNからなり、前記電子供給層がAlGaNからなる、請求項26~40のいずれか一項に記載の窒化物半導体装置。
- 前記電子走行層が400nm以上の厚さのGaN層である、請求項26~41のいずれか一項に記載の窒化物半導体装置。
- 前記電子供給層上に間隔を開けて配置されたソース電極およびドレイン電極と、
前記ソース電極および前記ドレイン電極の間において前記電子走行層に対向するように配置されたゲート電極と、
をさらに含む、請求項26~42のいずれか一項に記載の窒化物半導体装置。 - 前記ゲート電極が、前記素子分離層とともに、前記ソース電極を取り囲むように形成されている、請求項43に記載の窒化物半導体装置。
- 前記ソース電極、前記ドレイン電極および前記ゲート電極を覆う層間絶縁膜と、
前記層間絶縁膜を貫通するソースコンタクト孔を介して前記ソース電極に接続され、前記層間絶縁膜上に配置されたソース配線膜と、
前記層間絶縁膜を貫通するドレインコンタクト孔を介して前記ドレイン電極に接続され、前記層間絶縁膜上に配置されたドレイン配線膜と、をさらに含み、
前記ソース配線膜と前記ドレイン配線膜とが、前記層間絶縁膜上で櫛歯状に噛み合うパターンに形成されている、請求項43または44に記載の窒化物半導体装置。 - 前記配線が、前記ゲート電極に接続されたゲート配線を含む、請求項31に係る、請求項43~45のいずれか一項に記載の窒化物半導体装置。
- 基板上に、アルミニウム組成が基板に近い領域において相対的に高く、基板から遠い領域において相対的に低くなるようにAlGaN結晶をエピタキシャル成長させてAlGaNバッファ層を形成する工程と、
前記AlGaNバッファ層上に、窒化物半導体をエピタキシャル成長させて電子走行層を形成する工程と、
前記電子走行層上に、前記電子走行層とは異なる組成の窒化物半導体層をエピタキシャル成長させて電子供給層を形成する工程と、
前記電子供給層、前記電子走行層および前記AlGaNバッファ層にイオン注入して結晶構造を破壊することにより、前記電子供給層および前記電子走行層を貫通して前記AlGaNバッファ層に到達する高抵抗の素子分離層を形成する工程と、
を含む、窒化物半導体装置の製造方法。 - 前記AlGaNバッファ層を形成する工程が、第1アルミニウム組成の第1アルミニウム組成AlGaN層を形成する工程と、前記第1アルミニウム組成AlGaN層よりも上に前記第1アルミニウム組成よりも小さな第2アルミニウム組成の第2アルミニウム組成AlGaN層を形成する工程とを含む、請求項47に記載の窒化物半導体装置の製造方法。
- 前記AlGaNバッファ層を形成する工程の前に、前記基板上にAlNバッファ層を形成する工程をさらに含み、前記AlNバッファ層の上に前記AlGaNバッファ層が形成される、請求項47または48に記載の窒化物半導体装置。
- 前記素子分離層が、素子領域を取り囲むように形成される、請求項47~49のいずれか一項に記載の窒化物半導体装置の製造方法。
- 前記素子分離層が、複数の素子領域を分離するように形成され、
前記複数の素子領域にそれぞれ形成された素子間を接続する素子間配線を形成する工程をさらに含む、請求項47~50のいずれか一項に記載の窒化物半導体装置の製造方法。 - 前記イオン注入を、質量数が10より小さく2より大きい元素を材料とするイオンを用いて行う、請求項47~51のいずれか一項に記載の窒化物半導体装置の製造方法。
- 前記イオン注入を、ヘリウムイオンを用いて行う、請求項47~51のいずれか一項に記載の窒化物半導体装置の製造方法。
- 前記イオン注入を、複数の加速エネルギーを用いて行う、請求項47~53のいずれか一項に記載の窒化物半導体装置の製造方法。
- 前記イオン注入を、前記基板の主面に対して傾斜した方向から行う、請求項47~54のいずれか一項に記載の窒化物半導体装置の製造方法。
- 前記イオン注入を、前記基板の主面の法線方向に対して5~10度傾斜した方向から行う、請求項55に記載の窒化物半導体装置の製造方法。
- 前記電子走行層を形成する工程が、厚さ400nm以上のGaN層をエピタキシャル成長させる工程を含む、請求項47~56のいずれか一項に記載の窒化物半導体装置の製造方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/434,674 US9837521B2 (en) | 2012-10-11 | 2013-10-07 | Nitride semiconductor device and fabrication method therefor |
JP2014540837A JP6245559B2 (ja) | 2012-10-11 | 2013-10-07 | 窒化物半導体装置およびその製造方法 |
US15/672,112 US10256335B2 (en) | 2012-10-11 | 2017-08-08 | Nitride semiconductor device and fabrication method therefor |
US16/295,777 US10686064B2 (en) | 2012-10-11 | 2019-03-07 | Nitride semiconductor device and fabrication method therefor |
US15/930,070 US10991818B2 (en) | 2012-10-11 | 2020-05-12 | Nitride semiconductor device and fabrication method therefor |
US17/212,619 US11777024B2 (en) | 2012-10-11 | 2021-03-25 | Nitride semiconductor device and fabrication method therefor |
US18/451,863 US20230411508A1 (en) | 2012-10-11 | 2023-08-18 | Nitride semiconductor device and fabrication method therefor |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012-226256 | 2012-10-11 | ||
JP2012226256 | 2012-10-11 | ||
JP2012-272725 | 2012-12-13 | ||
JP2012272725 | 2012-12-13 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/434,674 A-371-Of-International US9837521B2 (en) | 2012-10-11 | 2013-10-07 | Nitride semiconductor device and fabrication method therefor |
US15/672,112 Division US10256335B2 (en) | 2012-10-11 | 2017-08-08 | Nitride semiconductor device and fabrication method therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2014057906A1 true WO2014057906A1 (ja) | 2014-04-17 |
Family
ID=50477373
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2013/077233 WO2014057906A1 (ja) | 2012-10-11 | 2013-10-07 | 窒化物半導体装置およびその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (6) | US9837521B2 (ja) |
JP (1) | JP6245559B2 (ja) |
WO (1) | WO2014057906A1 (ja) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160260832A1 (en) * | 2015-03-06 | 2016-09-08 | Toyoda Gosei Co., Ltd. | Semiconductor device, method of manufacturing the same and power converter |
CN107408573A (zh) * | 2014-12-30 | 2017-11-28 | 泰勒斯公司 | 场效应晶体管的半导体材料堆叠的上表面的多层钝化 |
JP6245593B1 (ja) * | 2016-08-31 | 2017-12-13 | 国立大学法人大阪大学 | 半導体装置および半導体装置の製造方法 |
CN107634098A (zh) * | 2016-07-19 | 2018-01-26 | 丰田合成株式会社 | 半导体器件及其制造方法 |
JP2018125440A (ja) * | 2017-02-01 | 2018-08-09 | 株式会社東芝 | 半導体装置の製造方法 |
JP2019516244A (ja) * | 2016-04-15 | 2019-06-13 | メイコム テクノロジー ソリューションズ ホールディングス インコーポレイテッド | 高電圧GaN高電子移動度トランジスタ |
JP2019121785A (ja) * | 2017-12-27 | 2019-07-22 | ローム株式会社 | 半導体装置およびその製造方法 |
JP2019125770A (ja) * | 2017-06-30 | 2019-07-25 | 富士電機株式会社 | 窒化ガリウム系半導体装置および窒化ガリウム系半導体装置の製造方法 |
JP2019145748A (ja) * | 2018-02-23 | 2019-08-29 | ローム株式会社 | 半導体装置 |
JP2020043357A (ja) * | 2015-08-10 | 2020-03-19 | ローム株式会社 | 窒化物半導体デバイス |
JP2021044588A (ja) * | 2020-12-17 | 2021-03-18 | 富士通株式会社 | 半導体装置及び半導体装置の製造方法 |
TWI732596B (zh) * | 2020-02-25 | 2021-07-01 | 台灣積體電路製造股份有限公司 | 半導體元件及其製造方法 |
US11923462B2 (en) | 2016-04-15 | 2024-03-05 | Macom Technology Solutions Holdings, Inc. | Lateral Schottky diode |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5781292B2 (ja) * | 2010-11-16 | 2015-09-16 | ローム株式会社 | 窒化物半導体素子および窒化物半導体パッケージ |
JP6245559B2 (ja) | 2012-10-11 | 2017-12-13 | ローム株式会社 | 窒化物半導体装置およびその製造方法 |
US9443969B2 (en) * | 2013-07-23 | 2016-09-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Transistor having metal diffusion barrier |
KR102145881B1 (ko) * | 2013-12-23 | 2020-08-19 | 인텔 코포레이션 | 이동도 개선된 n-mos를 위한 인장 소스 드레인 ⅲ-ⅴ 트랜지스터들 |
US9793370B2 (en) * | 2014-05-30 | 2017-10-17 | Delta Electronics, Inc. | Transistor with oxidized cap layer |
US9953841B2 (en) * | 2015-05-08 | 2018-04-24 | Macronix International Co., Ltd. | Semiconductor device and method of fabricating the same |
JP6234975B2 (ja) * | 2015-10-02 | 2017-11-22 | 株式会社豊田中央研究所 | 半導体装置 |
JP6687831B2 (ja) * | 2015-10-30 | 2020-04-28 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
ITUB20155536A1 (it) | 2015-11-12 | 2017-05-12 | St Microelectronics Srl | Transistore hemt di tipo normalmente spento includente una trincea contenente una regione di gate e formante almeno un gradino, e relativo procedimento di fabbricazione |
US9960127B2 (en) | 2016-05-18 | 2018-05-01 | Macom Technology Solutions Holdings, Inc. | High-power amplifier package |
US10134658B2 (en) | 2016-08-10 | 2018-11-20 | Macom Technology Solutions Holdings, Inc. | High power transistors |
CN109690784A (zh) * | 2016-08-22 | 2019-04-26 | 香港科技大学 | 具有栅极-电介质/半导体界面保护层的金属绝缘体半导体晶体管 |
US10770575B2 (en) * | 2016-09-30 | 2020-09-08 | Intel Corporation | Vertical group III-N devices and their methods of fabrication |
US10204995B2 (en) * | 2016-11-28 | 2019-02-12 | Infineon Technologies Austria Ag | Normally off HEMT with self aligned gate structure |
JP6868389B2 (ja) * | 2016-12-27 | 2021-05-12 | 住友化学株式会社 | 半導体基板および電子デバイス |
US10700188B2 (en) * | 2017-11-02 | 2020-06-30 | Rohm Co., Ltd. | Group III nitride semiconductor device with first and second conductive layers |
US11233047B2 (en) | 2018-01-19 | 2022-01-25 | Macom Technology Solutions Holdings, Inc. | Heterolithic microwave integrated circuits including gallium-nitride devices on highly doped regions of intrinsic silicon |
US11056483B2 (en) | 2018-01-19 | 2021-07-06 | Macom Technology Solutions Holdings, Inc. | Heterolithic microwave integrated circuits including gallium-nitride devices on intrinsic semiconductor |
US11257676B2 (en) * | 2018-01-19 | 2022-02-22 | Fuji Electric Co., Ltd. | Gallium nitride based semiconductor device and manufacturing method of gallium nitride based semiconductor device |
US10950598B2 (en) | 2018-01-19 | 2021-03-16 | Macom Technology Solutions Holdings, Inc. | Heterolithic microwave integrated circuits including gallium-nitride devices formed on highly doped semiconductor |
JP2021533556A (ja) * | 2018-08-06 | 2021-12-02 | メイコム テクノロジー ソリューションズ ホールディングス インコーポレイテッド | 高電圧大電力アクティブデバイスの信頼性を向上させるための外部電界終端構造 |
JP7395273B2 (ja) * | 2019-07-02 | 2023-12-11 | ローム株式会社 | 窒化物半導体装置およびその製造方法 |
CN117832265A (zh) | 2019-09-12 | 2024-04-05 | 联华电子股份有限公司 | 半导体装置及其制作方法 |
US11600614B2 (en) | 2020-03-26 | 2023-03-07 | Macom Technology Solutions Holdings, Inc. | Microwave integrated circuits including gallium-nitride devices on silicon |
CN112635545B (zh) * | 2020-12-18 | 2022-05-31 | 华南师范大学 | 具有不对称栅介质层的增强型GaN基MIS-HEMT及其制备方法 |
CN113644128A (zh) * | 2021-06-29 | 2021-11-12 | 西安电子科技大学 | 一种槽栅多沟道结构GaN基高电子迁移率晶体管及制作方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010010584A (ja) * | 2008-06-30 | 2010-01-14 | Sharp Corp | ヘテロ接合電界効果トランジスタおよびヘテロ接合電界効果トランジスタの製造方法 |
JP2010278333A (ja) * | 2009-05-29 | 2010-12-09 | Furukawa Electric Co Ltd:The | 半導体装置およびその製造方法 |
JP2011171440A (ja) * | 2010-02-17 | 2011-09-01 | Sharp Corp | Iii族窒化物系へテロ電界効果トランジスタ |
JP2011187643A (ja) * | 2010-03-08 | 2011-09-22 | Sharp Corp | ヘテロ接合型電界効果トランジスタ |
JP2012009594A (ja) * | 2010-06-24 | 2012-01-12 | Renesas Electronics Corp | 半導体装置 |
JP2012156245A (ja) * | 2011-01-25 | 2012-08-16 | Tohoku Univ | 半導体装置の製造方法、および半導体装置 |
JP2012174875A (ja) * | 2011-02-21 | 2012-09-10 | Fujitsu Ltd | 半導体装置及び半導体装置の製造方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5767546A (en) * | 1994-12-30 | 1998-06-16 | Siliconix Incorporated | Laternal power mosfet having metal strap layer to reduce distributed resistance |
JP4134575B2 (ja) | 2002-02-28 | 2008-08-20 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
JP4154960B2 (ja) | 2002-08-29 | 2008-09-24 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
US7323376B2 (en) * | 2003-01-22 | 2008-01-29 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating a semiconductor device including a group III nitride semiconductor |
US7176115B2 (en) * | 2003-03-20 | 2007-02-13 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing Group III nitride substrate and semiconductor device |
US7288803B2 (en) * | 2004-10-01 | 2007-10-30 | International Rectifier Corporation | III-nitride power semiconductor device with a current sense electrode |
JP5237535B2 (ja) | 2005-07-28 | 2013-07-17 | パナソニック株式会社 | 半導体装置 |
JP2007150106A (ja) * | 2005-11-29 | 2007-06-14 | Nec Corp | Iii族窒化物半導体基板 |
JP5400266B2 (ja) | 2006-04-17 | 2014-01-29 | パナソニック株式会社 | 電界効果トランジスタ |
JP5065616B2 (ja) * | 2006-04-21 | 2012-11-07 | 株式会社東芝 | 窒化物半導体素子 |
JP5242068B2 (ja) | 2007-03-23 | 2013-07-24 | 古河電気工業株式会社 | GaN系半導体デバイスおよびその製造方法 |
US8110890B2 (en) * | 2007-06-05 | 2012-02-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating semiconductor device isolation structure |
JP5262185B2 (ja) | 2008-02-29 | 2013-08-14 | 富士通株式会社 | 半導体装置の製造方法 |
US20100117118A1 (en) * | 2008-08-07 | 2010-05-13 | Dabiran Amir M | High electron mobility heterojunction device |
JP5589329B2 (ja) * | 2009-09-24 | 2014-09-17 | 豊田合成株式会社 | Iii族窒化物半導体からなる半導体装置、電力変換装置 |
JP2012038885A (ja) * | 2010-08-06 | 2012-02-23 | Panasonic Corp | 半導体装置及びその製造方法 |
JP5620767B2 (ja) | 2010-09-17 | 2014-11-05 | パナソニック株式会社 | 半導体装置 |
TWI587512B (zh) * | 2011-05-16 | 2017-06-11 | Renesas Electronics Corp | Field effect transistor and semiconductor device |
US20130320349A1 (en) * | 2012-05-30 | 2013-12-05 | Triquint Semiconductor, Inc. | In-situ barrier oxidation techniques and configurations |
JP6245559B2 (ja) * | 2012-10-11 | 2017-12-13 | ローム株式会社 | 窒化物半導体装置およびその製造方法 |
-
2013
- 2013-10-07 JP JP2014540837A patent/JP6245559B2/ja active Active
- 2013-10-07 US US14/434,674 patent/US9837521B2/en active Active
- 2013-10-07 WO PCT/JP2013/077233 patent/WO2014057906A1/ja active Application Filing
-
2017
- 2017-08-08 US US15/672,112 patent/US10256335B2/en active Active
-
2019
- 2019-03-07 US US16/295,777 patent/US10686064B2/en active Active
-
2020
- 2020-05-12 US US15/930,070 patent/US10991818B2/en active Active
-
2021
- 2021-03-25 US US17/212,619 patent/US11777024B2/en active Active
-
2023
- 2023-08-18 US US18/451,863 patent/US20230411508A1/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010010584A (ja) * | 2008-06-30 | 2010-01-14 | Sharp Corp | ヘテロ接合電界効果トランジスタおよびヘテロ接合電界効果トランジスタの製造方法 |
JP2010278333A (ja) * | 2009-05-29 | 2010-12-09 | Furukawa Electric Co Ltd:The | 半導体装置およびその製造方法 |
JP2011171440A (ja) * | 2010-02-17 | 2011-09-01 | Sharp Corp | Iii族窒化物系へテロ電界効果トランジスタ |
JP2011187643A (ja) * | 2010-03-08 | 2011-09-22 | Sharp Corp | ヘテロ接合型電界効果トランジスタ |
JP2012009594A (ja) * | 2010-06-24 | 2012-01-12 | Renesas Electronics Corp | 半導体装置 |
JP2012156245A (ja) * | 2011-01-25 | 2012-08-16 | Tohoku Univ | 半導体装置の製造方法、および半導体装置 |
JP2012174875A (ja) * | 2011-02-21 | 2012-09-10 | Fujitsu Ltd | 半導体装置及び半導体装置の製造方法 |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107408573A (zh) * | 2014-12-30 | 2017-11-28 | 泰勒斯公司 | 场效应晶体管的半导体材料堆叠的上表面的多层钝化 |
US20160260832A1 (en) * | 2015-03-06 | 2016-09-08 | Toyoda Gosei Co., Ltd. | Semiconductor device, method of manufacturing the same and power converter |
JP2020043357A (ja) * | 2015-08-10 | 2020-03-19 | ローム株式会社 | 窒化物半導体デバイス |
US11923462B2 (en) | 2016-04-15 | 2024-03-05 | Macom Technology Solutions Holdings, Inc. | Lateral Schottky diode |
JP7073271B2 (ja) | 2016-04-15 | 2022-05-23 | メイコム テクノロジー ソリューションズ ホールディングス インコーポレイテッド | 高電圧GaN高電子移動度トランジスタ |
JP2019516244A (ja) * | 2016-04-15 | 2019-06-13 | メイコム テクノロジー ソリューションズ ホールディングス インコーポレイテッド | 高電圧GaN高電子移動度トランジスタ |
CN107634098A (zh) * | 2016-07-19 | 2018-01-26 | 丰田合成株式会社 | 半导体器件及其制造方法 |
CN107634098B (zh) * | 2016-07-19 | 2021-02-02 | 丰田合成株式会社 | 半导体器件及其制造方法 |
WO2018042541A1 (ja) * | 2016-08-31 | 2018-03-08 | 国立大学法人大阪大学 | 半導体装置および半導体装置の製造方法 |
US10103232B2 (en) | 2016-08-31 | 2018-10-16 | Osaka University | Semiconductor device and method for manufacturing semiconductor device |
JP6245593B1 (ja) * | 2016-08-31 | 2017-12-13 | 国立大学法人大阪大学 | 半導体装置および半導体装置の製造方法 |
JP2018125440A (ja) * | 2017-02-01 | 2018-08-09 | 株式会社東芝 | 半導体装置の製造方法 |
JP2019125770A (ja) * | 2017-06-30 | 2019-07-25 | 富士電機株式会社 | 窒化ガリウム系半導体装置および窒化ガリウム系半導体装置の製造方法 |
JP7056408B2 (ja) | 2017-06-30 | 2022-04-19 | 富士電機株式会社 | 窒化ガリウム系半導体装置および窒化ガリウム系半導体装置の製造方法 |
JP2019121785A (ja) * | 2017-12-27 | 2019-07-22 | ローム株式会社 | 半導体装置およびその製造方法 |
JP2019145748A (ja) * | 2018-02-23 | 2019-08-29 | ローム株式会社 | 半導体装置 |
JP7316757B2 (ja) | 2018-02-23 | 2023-07-28 | ローム株式会社 | 半導体装置 |
TWI732596B (zh) * | 2020-02-25 | 2021-07-01 | 台灣積體電路製造股份有限公司 | 半導體元件及其製造方法 |
JP2021044588A (ja) * | 2020-12-17 | 2021-03-18 | 富士通株式会社 | 半導体装置及び半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20150279982A1 (en) | 2015-10-01 |
US10991818B2 (en) | 2021-04-27 |
US20190207023A1 (en) | 2019-07-04 |
US10686064B2 (en) | 2020-06-16 |
US20170338333A1 (en) | 2017-11-23 |
US11777024B2 (en) | 2023-10-03 |
JPWO2014057906A1 (ja) | 2016-09-05 |
JP6245559B2 (ja) | 2017-12-13 |
US9837521B2 (en) | 2017-12-05 |
US20200273975A1 (en) | 2020-08-27 |
US20230411508A1 (en) | 2023-12-21 |
US20210217886A1 (en) | 2021-07-15 |
US10256335B2 (en) | 2019-04-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6245559B2 (ja) | 窒化物半導体装置およびその製造方法 | |
JP5487615B2 (ja) | 電界効果半導体装置及びその製造方法 | |
JP6090764B2 (ja) | 窒化物半導体装置およびその製造方法 | |
JP6367533B2 (ja) | ノーマリーオフ高電子移動度トランジスタ | |
JP6401053B2 (ja) | 半導体装置および半導体装置の製造方法 | |
CN102694019B (zh) | 氮化物半导体器件及其制造方法 | |
JP7317936B2 (ja) | 窒化物半導体装置 | |
US10868165B2 (en) | Transistor structure with depletion-mode and enhancement mode-devices | |
JP2022191421A (ja) | 半導体装置 | |
JP5827529B2 (ja) | 窒化物半導体装置およびその製造方法 | |
JP6496149B2 (ja) | 半導体装置および半導体装置の製造方法 | |
US20110204380A1 (en) | Nitride-based fet | |
US20180047822A1 (en) | Semiconductor device | |
JP7161915B2 (ja) | 半導体装置 | |
JP6176677B2 (ja) | 窒化物半導体装置 | |
JP6016440B2 (ja) | 窒化物半導体装置およびその製造方法 | |
US11437473B2 (en) | Nitride semiconductor device and method of manufacturing the same | |
JP6689424B2 (ja) | 半導体装置 | |
JP2019009459A (ja) | 半導体装置および半導体装置の製造方法 | |
JP6872055B2 (ja) | 半導体装置 | |
US20210399120A1 (en) | High electron mobility transistor and method of manufacturing the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 13846206 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2014540837 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14434674 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 13846206 Country of ref document: EP Kind code of ref document: A1 |