JP6245593B1 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
- Publication number
- JP6245593B1 JP6245593B1 JP2017541989A JP2017541989A JP6245593B1 JP 6245593 B1 JP6245593 B1 JP 6245593B1 JP 2017541989 A JP2017541989 A JP 2017541989A JP 2017541989 A JP2017541989 A JP 2017541989A JP 6245593 B1 JP6245593 B1 JP 6245593B1
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor device
- interface layer
- data
- underlayer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 94
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910001195 gallium oxide Inorganic materials 0.000 claims abstract description 17
- 230000008021 deposition Effects 0.000 claims abstract description 14
- 150000004767 nitrides Chemical class 0.000 claims abstract description 13
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 93
- 230000003647 oxidation Effects 0.000 claims description 88
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 47
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 32
- 229910002601 GaN Inorganic materials 0.000 claims description 23
- 239000013078 crystal Substances 0.000 claims description 22
- 230000003746 surface roughness Effects 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 13
- 238000004544 sputter deposition Methods 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000007800 oxidant agent Substances 0.000 claims description 4
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 28
- 238000001228 spectrum Methods 0.000 description 25
- 239000010408 film Substances 0.000 description 19
- 238000000089 atomic force micrograph Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 13
- 229910004298 SiO 2 Inorganic materials 0.000 description 12
- 238000002441 X-ray diffraction Methods 0.000 description 12
- 238000005259 measurement Methods 0.000 description 12
- 238000004458 analytical method Methods 0.000 description 11
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 10
- 230000007547 defect Effects 0.000 description 9
- 239000006185 dispersion Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02241—III-V semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02389—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02483—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
20 界面層
30 堆積層
100 半導体装置
Claims (15)
- ガリウムを有する窒化物半導体を含む下地層と、
前記下地層に隣接し、酸化ガリウムを含む界面層と、
前記界面層に隣接し、前記界面層よりもバンドギャップが大きい堆積層と
を備え、
前記界面層はα相Ga 2 O 3 を有する、半導体装置。 - 前記界面層は結晶性を有する、請求項1に記載の半導体装置。
- 前記界面層はβ相Ga2O3をさらに有し、
前記界面層の体積のうち前記α相Ga2O3の体積が占める割合は、前記β相Ga2O3が占める割合よりも大きい、請求項1または請求項2に記載の半導体装置。 - 前記界面層の前記酸化ガリウムの結晶方位は、前記下地層の前記窒化物半導体の結晶方位と整合している、請求項1から請求項3のいずれか1項に記載の半導体装置。
- 前記界面層の厚さは、0よりも大きく10nm以下である、請求項1から請求項4のいずれか1項に記載の半導体装置。
- 前記界面層の厚さは、前記堆積層の厚さよりも薄い、請求項1から請求項5のいずれか1項に記載の半導体装置。
- 前記界面層の表面粗さの二乗平均平方根は、0よりも大きく5nm以下である、請求項1から請求項6のいずれか1項に記載の半導体装置。
- 前記界面層の表面粗さの二乗平均平方根は、0よりも大きく1nm以下である、請求項7に記載の半導体装置。
- ガリウムを有する窒化物半導体を含む下地層を用意する工程と、
処理によって前記下地層の表面に酸化ガリウムを含む界面層を形成する工程と、
前記界面層よりもバンドギャップが大きい堆積層を形成する工程と
を包含し、
前記界面層はα相Ga 2 O 3 を有する、半導体装置の製造方法。 - 前記処理は酸化処理を含む、請求項9に記載の半導体装置の製造方法。
- 前記酸化処理は、
800℃以上1000℃以下の温度におけるドライ酸化処理と、
酸素分子以外の酸化剤による酸化処理と、
活性酸素を用いたラジカル酸化処理と、
溶液中における酸化処理と、
室温において前記酸化ガリウムを形成した後に行う熱処理とのいずれか1つを行う、請求項10に記載の半導体装置の製造方法。 - 前記堆積層を形成する工程において、前記界面層に隣接するように前記堆積層を形成し、
前記堆積層は、前記界面層を形成した後に形成される、請求項10または請求項11に記載の半導体装置の製造方法。 - 前記堆積層を形成する工程において、前記下地層に隣接するように前記堆積層を形成し、
前記界面層は、前記堆積層を形成した後に形成される、請求項10または請求項11に記載の半導体装置の製造方法。 - 前記処理は、スパッタリングを含む、請求項9に記載の半導体装置の製造方法。
- ガリウムを有する窒化物半導体を含む下地層を用意する工程と、
処理によって前記下地層の表面に酸化ガリウムを含む界面層を形成する工程と、
前記界面層よりもバンドギャップが大きい堆積層を形成する工程と
を包含し、
前記下地層のうち前記界面層と接触する表面が、ガリウムナイトライドからなり、
前記界面層は結晶性を有し、
前記処理は、スパッタリングを含む、半導体装置の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2016/075465 WO2018042541A1 (ja) | 2016-08-31 | 2016-08-31 | 半導体装置および半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP6245593B1 true JP6245593B1 (ja) | 2017-12-13 |
JPWO2018042541A1 JPWO2018042541A1 (ja) | 2018-09-06 |
Family
ID=60659071
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017541989A Active JP6245593B1 (ja) | 2016-08-31 | 2016-08-31 | 半導体装置および半導体装置の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10103232B2 (ja) |
JP (1) | JP6245593B1 (ja) |
WO (1) | WO2018042541A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11257676B2 (en) * | 2018-01-19 | 2022-02-22 | Fuji Electric Co., Ltd. | Gallium nitride based semiconductor device and manufacturing method of gallium nitride based semiconductor device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001320054A (ja) * | 2000-05-10 | 2001-11-16 | Furukawa Electric Co Ltd:The | GaN系絶縁ゲート形電界効果トランジスタ |
JP2003258258A (ja) * | 2002-02-28 | 2003-09-12 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
WO2014057906A1 (ja) * | 2012-10-11 | 2014-04-17 | ローム株式会社 | 窒化物半導体装置およびその製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5661509B2 (ja) * | 2010-03-02 | 2015-01-28 | 住友金属鉱山株式会社 | 積層体およびその製造方法、並びにそれを用いた機能素子 |
JP6162388B2 (ja) | 2012-11-14 | 2017-07-12 | 新日本無線株式会社 | 炭化珪素半導体装置の製造方法 |
US9130026B2 (en) * | 2013-09-03 | 2015-09-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Crystalline layer for passivation of III-N surface |
-
2016
- 2016-08-31 WO PCT/JP2016/075465 patent/WO2018042541A1/ja active Application Filing
- 2016-08-31 JP JP2017541989A patent/JP6245593B1/ja active Active
-
2017
- 2017-08-25 US US15/687,302 patent/US10103232B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001320054A (ja) * | 2000-05-10 | 2001-11-16 | Furukawa Electric Co Ltd:The | GaN系絶縁ゲート形電界効果トランジスタ |
JP2003258258A (ja) * | 2002-02-28 | 2003-09-12 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
WO2014057906A1 (ja) * | 2012-10-11 | 2014-04-17 | ローム株式会社 | 窒化物半導体装置およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US10103232B2 (en) | 2018-10-16 |
US20180061954A1 (en) | 2018-03-01 |
WO2018042541A1 (ja) | 2018-03-08 |
JPWO2018042541A1 (ja) | 2018-09-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9824886B2 (en) | Stress mitigating amorphous SiO2 interlayer | |
TWI344667B (ja) | ||
US8394194B1 (en) | Single crystal reo buffer on amorphous SiOx | |
TW202017011A (zh) | 奈米線裝置的形成方法 | |
WO2012124506A1 (ja) | 酸化物基板およびその製造方法 | |
JP2006349673A (ja) | ナノワイヤセンサ装置およびナノワイヤセンサ装置構造の製造方法 | |
JP5997258B2 (ja) | オフ角を備えているシリコン単結晶とiii族窒化物単結晶の積層基板と、その製造方法 | |
JP4834838B2 (ja) | 半導体装置及びその製造方法 | |
Azulay et al. | Why do nanowires grow with their c-axis vertically-aligned in the absence of epitaxy? | |
JP6245593B1 (ja) | 半導体装置および半導体装置の製造方法 | |
JP2002510438A (ja) | 複合si/sigeゲートを持つ半導体装置における相互拡散の制限方法 | |
JPH11186523A (ja) | 絶縁体材料、絶縁膜被覆基板、その製造方法及びその用途 | |
JP7246324B2 (ja) | 結晶酸化ケイ素を有するシリコンオンインシュレータ | |
JP6169182B2 (ja) | ゲルマニウム層を熱処理する半導体基板の製造方法および半導体装置の製造方法 | |
JP2002003297A (ja) | 酸化物薄膜素子およびその製造方法 | |
JP2002110662A (ja) | 半導体装置の製造方法および半導体装置 | |
Hsieh et al. | Dynamic observation on the growth behaviors in manganese silicide/silicon nanowire heterostructures | |
US8377718B2 (en) | Methods of forming a crystalline Pr1-xCaxMnO3 (PCMO) material and methods of forming semiconductor device structures comprising crystalline PCMO | |
WO2014050187A1 (ja) | ゲルマニウム層の表面の平坦化方法並びに半導体構造およびその製造方法 | |
Lu et al. | Characteristics of metal-ferroelectric-insulator-semiconductor diodes composed of Pt electrodes and epitaxial Sr0. 8Bi2. 2Ta2O9 (001)/SrTiO3 (100)/Si (100) structures | |
Taniwaki et al. | Investigation of the static electric field effect of strontium silicate layers on silicon substrates | |
JP3162914B2 (ja) | 半導体素子用貼り合せシリコンウェーハの製造方法 | |
JP2006032596A (ja) | ゲート絶縁膜の作製方法 | |
TWI257380B (en) | Manufacturing method of tungsten oxide nanowire | |
JP5278804B2 (ja) | 絶縁性被膜の形成方法および半導体装置の製造方法。 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170809 |
|
A529 | Written submission of copy of amendment under article 34 pct |
Free format text: JAPANESE INTERMEDIATE CODE: A5211 Effective date: 20170809 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170809 |
|
A80 | Written request to apply exceptions to lack of novelty of invention |
Free format text: JAPANESE INTERMEDIATE CODE: A801 Effective date: 20170809 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20170809 |
|
A80 | Written request to apply exceptions to lack of novelty of invention |
Free format text: JAPANESE INTERMEDIATE CODE: A80 Effective date: 20170809 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20171004 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20171017 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20171107 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6245593 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |