WO2014003107A1 - Dispositif d'ondulation et procédé d'ondulation - Google Patents

Dispositif d'ondulation et procédé d'ondulation Download PDF

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Publication number
WO2014003107A1
WO2014003107A1 PCT/JP2013/067624 JP2013067624W WO2014003107A1 WO 2014003107 A1 WO2014003107 A1 WO 2014003107A1 JP 2013067624 W JP2013067624 W JP 2013067624W WO 2014003107 A1 WO2014003107 A1 WO 2014003107A1
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WIPO (PCT)
Prior art keywords
sheet
pressure
elastic sheet
chip
substrate
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PCT/JP2013/067624
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English (en)
Japanese (ja)
Inventor
寺田　勝美
奈良場　聰
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東レエンジニアリング株式会社
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Application filed by 東レエンジニアリング株式会社 filed Critical 東レエンジニアリング株式会社
Priority to KR1020157002389A priority Critical patent/KR102117726B1/ko
Priority to JP2014522673A priority patent/JP6029245B2/ja
Publication of WO2014003107A1 publication Critical patent/WO2014003107A1/fr

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Definitions

  • the present invention relates to a crimping apparatus and a crimping method for collectively crimping a plurality of chips temporarily bonded to a substrate via an adhesive.
  • a method of manufacturing a CSP (Chip Size Package) at a wafer level has been performed in response to the demand for higher integration and higher density of LSI chips.
  • a flip chip is pressure-bonded to a silicon wafer on which a circuit is formed, and then diced to manufacture a CSP.
  • the wafer and the flip chip are preliminarily pressure-bonded (temporarily connected) using an adhesive such as a thermosetting resin or an anisotropic conductive adhesive.
  • the plurality of flip chips on the wafer are heated and cooled at a predetermined time and at a predetermined temperature to complete the pressure bonding.
  • Patent Document 1 as a crimping device for manufacturing a CSP at the wafer level, a cylindrical cylinder, a base provided to seal one side thereof, a lid on the other side of the cylinder, and the inside of the cylinder
  • the pressure bonding apparatus comprised from the metal piston which moves is disclosed.
  • the volume of the sealed space in the cylinder is reduced by moving the piston.
  • An interposer is placed on the base by being temporarily connected to the silicon wafer with an insulating adhesive film, and a sheet member covers the temporarily connected silicon wafer.
  • a heater is embedded in the base.
  • a pressurized compressed gas is introduced into the cylinder, the temporarily connected silicon wafer is fully pressurized through the sheet member, the heater is energized, the insulating adhesive film is melted, and each silicon wafer is melted.
  • the electrode and each electrode of the interposer are electrically connected to produce a CSP connection body.
  • the invention described in claim 1 After aligning a plurality of chips on a substrate, a crimping device that collectively crimps a chip temporarily bonded via a resin, A substrate stage that sucks and holds the back surface of the substrate to which the chip is crimped; An elastic sheet covering the surface of the temporarily crimped chip; A sheet holding means for holding the elastic sheet, located on the outer periphery of the substrate stage; Decompression means for decompressing a sealed space formed by the sheet holding means, the elastic sheet, and the substrate stage; And a bonding head that applies a predetermined pressure to a chip on a substrate via an elastic sheet.
  • the invention according to claim 2 is the invention according to claim 1, It is a pressure bonding apparatus provided with a sheet supply means for supplying the elastic sheet as a single sheet.
  • the invention according to claim 3 is the invention according to claim 1 or 2
  • the pressure bonding apparatus includes a gas supply unit that supplies an inert gas to a sealed space formed by the sheet holding unit, the elastic sheet, and the substrate stage.
  • the invention according to claim 4 is the invention according to any one of claims 1 to 3,
  • the pressure bonding apparatus includes heating and cooling means for the bonding head and the substrate stage.
  • the invention according to claim 5 is the invention according to any one of claims 1 to 4,
  • the pressure bonding apparatus has a function of lowering the pressure surface of the bonding head while maintaining a state parallel to the substrate stage.
  • a chip that is temporarily press-bonded via a resin is a pressure-bonding method that collectively press-bonds, A substrate stage that sucks and holds the back surface of the substrate to which the chip is crimped; An elastic sheet covering the surface of the temporarily crimped chip; A sheet holding means for holding the elastic sheet, located on the outer periphery of the substrate stage; Decompression means for decompressing a sealed space formed by the sheet holding means, the elastic sheet, and the substrate stage; A bonding head that applies a predetermined pressing force to the chip on the substrate via the elastic sheet, A step of placing the substrate on which the chip is temporarily pressure-bonded on the substrate stage; Covering the surface of the chip temporarily bonded with the elastic sheet, and holding the elastic sheet; A step of reducing the pressure of the sealed space formed by the sheet holding means, the elastic sheet, and the substrate stage; And a step of lowering the bonding head to a predetermined height and applying a predetermined pressure
  • the invention according to claim 7 is the invention according to claim 6, This is a pressure-bonding method including a step of supplying an elastic sheet as a single sheet and replacing the elastic sheet for each batch pressure bonding operation.
  • the invention according to claim 8 is the invention according to claim 6 or 7, A method for pressure bonding, characterized in that a material having a heat resistant temperature of 350 ° C. or higher, a thermal shrinkage rate of 350 ° C. of 0.1% or lower, and a thermal conductivity of 1 W / m ⁇ K or higher is used for the elastic sheet. It is.
  • the invention according to claim 9 is the invention according to any one of claims 6 to 8,
  • the method includes a step of operating heating and cooling means provided in the bonding head and the substrate stage.
  • the invention according to claim 10 is the invention according to any one of claims 6 to 9,
  • the pressure-bonding method includes a step of bringing a sealed space formed by the sheet holding means, the elastic sheet, and the substrate stage into an inert gas atmosphere.
  • the pressure surface of the bonding head is lowered while maintaining a state parallel to the substrate stage. This is a crimping method.
  • the bonding head presses the chip with a predetermined pressure through the elastic sheet, the chip and the substrate are crimped without being displaced when the adhesive melts. Become so.
  • a sealed space can be locally formed and replaced under reduced pressure, it is possible to perform pressure bonding at a time while preventing bump oxidation with a simple structure without requiring a large chamber structure. it can.
  • voids due to outgas generated when the adhesive is cured by heating can be bonded together while suppressing voids by bonding under reduced pressure.
  • the adhesive that protrudes from the periphery of the chip adheres to the bonding head side when the chips temporarily bonded with the adhesive are collectively bonded. Can be prevented. Further, the adhesive can be cured and the bumps can be bonded together by heating and cooling from the bonding head and the substrate stage. Further, by supplying the elastic sheet as a single sheet, the wafer can be easily replaced at a high speed, and the crimping can be continuously performed.
  • FIG. 1 is a schematic side view of a crimping apparatus according to an embodiment of the present invention. It is a top view explaining arrangement
  • FIG. 1 is a side view of a crimping apparatus according to an embodiment of the present invention.
  • the left-right direction is the X axis
  • the front-rear direction is the Y axis
  • the axis perpendicular to the XY plane composed of the X axis and the Y axis is the Z axis (vertical direction), Axis.
  • the crimping apparatus 1 includes a pressurizing unit 20 that performs final pressure bonding of the wafer 2 on which the chip 3 is temporarily bonded via the adhesive 4, a substrate stage 40 that holds the wafer 2, and a sheet 5 that covers the chip 3 during the final pressure bonding.
  • the sheet supply means 50 to supply, the sheet holding means 60 to hold the sheet 5 on the outer periphery of the substrate stage 4, and the gas supply means 70 to supply an inert gas onto the wafer 2 are configured.
  • the chip 3 is previously aligned at a predetermined position on the wafer 2 and bonded using an adhesive (hereinafter, the chip 3 is temporarily bonded to the wafer 2). Notation).
  • the pressurizing means 20 includes a portal frame 21, a bonding head support portion 22 provided on a horizontal beam portion 21 a of the portal frame 21, and a cylindrical bonding head 23.
  • the vertical column portion 21b of the portal frame 21 has a highly rigid guide structure and is supported by the rigid guide 21c.
  • the vertical column portion 21b can be vertically expanded and contracted, and is connected to a vertical driving means (not shown).
  • the bonding head 23 can be moved in the Z direction (up and down direction) by the vertical movement of the vertical column portion 21b by the vertical driving means.
  • the rigid guide 21 c is erected on the base 6.
  • the portal frame 21 includes four vertical column portions 21b and four rigid guides 21c that support the respective vertical column portions 21b.
  • FIG. 2 shows the arrangement in an XY plane when viewed from the top, and four vertical pillars 21b (21b1, 21b2, 21b3, 21b4) and four rigid guides 21c (21c1, 21c2, 21c3, 21c4) are arranged.
  • the parallelism of the horizontal beam portion 21a of the portal frame 21 with respect to the substrate stage 40 is ensured.
  • the bonding head 23 includes a heater 43 that heats from the chip side of the wafer 2 on which the chip 3 is mounted, and a cooling unit 45 that cools the heated bonding head 23.
  • the substrate stage 40 includes a suction hole 41 that holds the back surface 2 b of the wafer 2 by suction, a heater 42 that heats the wafer 2, and a cooling unit 44 that cools the heated substrate stage 40.
  • the suction hole 41 is connected to a suction pump through a suction pipe (not shown).
  • the fixing means for the wafer 2 may not be an adsorption method using the suction holes 41 as long as it is firmly fixed to the substrate stage 40, such as a mechanical clamping method or an electrostatic chuck method.
  • a sheet holding means 60 is provided on the outer periphery of the substrate stage 40.
  • the sheet holding means 60 has an inner wall 61 and an outer wall 62 erected along the outer periphery of the substrate stage 40, and is placed on the upper part of the sheet holding means 60 by a suction space 63 that is a space sandwiched between the inner wall 61 and the outer wall 62.
  • the sheet 5 is sucked.
  • the inner wall 61 and the outer wall 62 extend to a position higher than the height at which the temporary crimped corner wafer 2 of the chip 3 is placed on the substrate stage 40.
  • the sheet holding means 60 may not be a suction method using the suction space 63 as long as the sheet holding means 60 is mechanically clamped to the inner wall 61.
  • the mechanism can be simplified since the bonding head 23 can be clamped at the same time.
  • a decompression means 80 is provided between the inner wall 61 and the substrate stage 40.
  • the decompression means 80 is provided with a decompression port 81 and can be decompressed by vacuum suction of a sealed space formed by the sheet holding means 60, the elastic sheet 5 and the substrate stage 40 by a vacuum pump.
  • a gas supply means 70 is provided between the inner wall 61 and the substrate stage 40.
  • the gas supply means 70 is provided with a supply port 71, and nitrogen (N 2) that is an inert gas is supplied from the supply port 71.
  • N 2 nitrogen
  • the sheet holding means 60, the gas supply means 70, and the decompression means 80 are indicated by oblique lines.
  • the sheet supply unit 50 includes a sheet unwinding unit 51 for supplying the roll-shaped sheet 5, a sheet gripping unit 53 for gripping the sheet 5 unwound from the sheet unwinding unit 51, and a sheet pulling unit 52 for pulling out the sheet 5. And a sheet cutting part 54 for cutting the drawn sheet 5.
  • the sheet unwinding portion 51 is disposed on the side portion of the portal frame 21.
  • the sheet drawing portion 52 moves in the X direction (horizontal direction) while gripping the sheet 5 inside the portal frame 21, and covers the sheet 5 on the upper portion of the wafer 2 where the chip 3 is temporarily crimped.
  • the sheet cutting part 54 is located between the sheet gripping part 53 and the sheet pulling part 52 and cuts the drawn sheet 5 while being gripped by the sheet gripping part 53 and the sheet pulling part 52. .
  • the sheet drawer 52 and the sheet gripper 53 are configured to be movable in the Z direction (vertical direction) while gripping the sheet 5.
  • the heat resistance temperature, heat shrinkage rate, and heat conductivity of the fluorine resin are not sufficient characteristics in the batch crimping application as in this embodiment. . That is, in the case of batch crimping, the temperature of the heater 43 may reach a maximum of 350 ° C., so heat resistance is insufficient, wrinkles may occur due to heat shrinkage, and mounting displacement may occur, and the thermal conductivity is low. There is a problem that the set temperature of the heater 43 for heating the chip to a predetermined temperature increases. For this reason, the required characteristics of the sheet 5 include a heat-resistant temperature of 350 ° C.
  • fluorine-based resin is about 260 ° C.
  • heat shrinkage 0.1% or less at 350 ° C. It is desirable that the thermal conductivity is 1 W / m ⁇ K or more (or 0.3 W / m ⁇ K for fluorine-based resin).
  • the description starts from a state in which the wafer 2 to which the chip 3 is temporarily bonded is placed on the substrate stage 40 with the bonding head 23 raised (step SP01).
  • the sheet 5 is pulled out from the sheet unwinding portion 51.
  • a sheet pulling portion 52 is used for pulling out the sheet 5.
  • the sheet drawer 52 grips the sheet 5 and moves in the X direction (horizontal direction) so as to straddle the sheet holding means 60.
  • the sheet drawing portion 52 moves in the X direction, the upper surface side of the wafer 2 to which the chips 3 are temporarily bonded is covered with the sheet 5.
  • the sheet 5 is pulled out so as to pass between the bonding head 23 and the wafer 2.
  • the sheet gripping portion 53 and the sheet drawing portion 52 gripping the sheet, the sheet 5 is lowered and the sheet 5 is set on the upper surface of the chip 3 (step SP02).
  • the sheet cutting unit 54 cuts the sheet 5, and the sheet drawing unit 52 returns to the original position (standby position) (FIG. 4).
  • a suction pump (not shown) connected to the suction space 63 of the sheet holding means 60 operates to suck the sheet 5 (step SP03).
  • the bonding head 23 is lowered and the chip 2 is attached to the wafer 3 via the sheet 5 as shown in FIG. Pressurize.
  • the bonding head 23 is lowered, the height of the four vertical pillar portions 21b (21b1, 21b2, 21b3, 21b4) shown in FIG.
  • control is performed so that the pressure surface of the bonding head 23 is not inclined. Specifically, control is performed so that the maximum value and the minimum value of the four vertical columnar portions 21b are within a predetermined deviation (for example, 3 ⁇ m when the wafer size is 300 mm), and the pressure surface of the bonding head 23 is controlled.
  • step SP04 After contacting the chip 2, pressure is applied so that a predetermined load is applied to all the chips 3 mounted on the wafer 2 (step SP04).
  • step SP05 the air in the space surrounded by the sheet 5, the substrate stage 40, and the inner wall 61 of the sheet holding means 60 is sucked by the decompression means 80 to make a vacuum.
  • step SP06 the heaters 42 and 43 provided in the bonding head 23 and the substrate stage 40 are heated to start the heat curing of the adhesive 4 (step SP06).
  • the bumps of the chip 3 and the electrodes formed on the circuit surface of the wafer 2 are simultaneously connected.
  • the bonding head 23 presses the chip 2 with a predetermined pressure through the sheet 5, the chip 2 and the substrate 3 are pressure-bonded without being displaced when the adhesive melts. .
  • produces when an adhesive heat-hardens is suppressed, and it will be in a joining state with sufficient quality.
  • an inert gas is supplied from the supply port 71 of the gas supply unit 70 after vacuum suction, so that the sheet 5, the substrate stage 40, and the sheet holding unit 60 The space surrounded by the inner wall 61 is replaced with an inert gas.
  • the entire periphery of the wafer 2 to which the chip 2 is temporarily press-bonded becomes an inert gas atmosphere, and oxidation of the electrode of the chip 2 is prevented (step SP07).
  • the bonding head 23 presses the chip 2 with a predetermined pressure through the sheet 5, the chip 2 and the substrate 3 are pressure-bonded without being displaced when the adhesive melts. .
  • the pressure and heating temperature can be controlled in multiple stages at arbitrary timings according to the number of chips to be crimped, the number of bumps, the curing reaction of the adhesive, and the melting temperature of the bumps.
  • step SP08 After pressurization and heating for a predetermined time, the bonding head 23 is raised and the main press bonding is completed.
  • the portal frame 21 has a predetermined length in order to reduce an error when performing the height monitoring of the four vertical pillars 21b (21b1, 21b2, 21b3, 21b4). It is necessary to calibrate the height monitoring function at intervals.
  • a bonding head 23 as shown in FIGS. 9 and 10 is placed on a substrate stage 40 in which four load cells 91, 92, 93, 94 having the same specifications are arranged instead of a wafer.
  • the zero point is set when the two surfaces are close to each other and are closest to each other in a parallel state. That is, whether or not both surfaces are in close contact with each other in parallel via the load cell is determined by whether the maximum value and the minimum value of the applied pressure detected by each of the four load cells are in an equilibrium state within a predetermined deviation.
  • the load cell is arranged on the substrate stage 41 when the height monitoring function is calibrated.
  • the load cell may be permanently installed between the substrate stage 41 and the heater 42.
  • the number is not limited to four, but three or five or more. It may be.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)

Abstract

L'invention concerne un dispositif d'ondulation et un procédé d'ondulation aptes à onduler une pluralité de copeaux, qui sont temporairement ondulés sur un substrat à l'aide d'un agent adhésif, sur un substrat dans un groupe sans provoquer de déplacement de montage. En particulier, l'invention concerne un procédé d'ondulation et un dispositif d'ondulation, comprenant : un étage de substrat pour maintenir la surface arrière du substrat sur lequel les copeaux seront ondulés par aspiration; une feuille élastique pour recouvrir la surface avant des copeaux temporairement ondulés; un moyen de retenue de feuille positionné sur la périphérie extérieure de l'étage de substrat pour retenir la feuille élastique; un moyen de décompression pour décompresser l'espace rendu étanche formé par le moyen de retenue de feuille, la feuille élastique et l'étage de substrat; et une tête de liaison pour appliquer une pression prédéterminée sur le copeau sur le substrat par l'intermédiaire de la feuille élastique.
PCT/JP2013/067624 2012-06-29 2013-06-27 Dispositif d'ondulation et procédé d'ondulation WO2014003107A1 (fr)

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KR1020157002389A KR102117726B1 (ko) 2012-06-29 2013-06-27 압착 장치 및 압착 방법
JP2014522673A JP6029245B2 (ja) 2012-06-29 2013-06-27 圧着装置および圧着方法

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WO2016050468A1 (fr) * 2014-09-29 2016-04-07 Danfoss Silicon Power Gmbh Outil de frittage et procédé de frittage d'un sous-ensemble électronique
JP2017107926A (ja) * 2015-12-08 2017-06-15 株式会社新川 電子部品実装装置
US10483229B2 (en) 2014-09-29 2019-11-19 Danfoss Silicon Power Gmbh Sintering device
CN110651360A (zh) * 2017-03-30 2020-01-03 株式会社新川 接合装置以及接合方法
CN110654030A (zh) * 2018-06-28 2020-01-07 松下知识产权经营株式会社 部件压接装置、片材设置单元及片材设置单元的安装方法
US10818633B2 (en) 2014-09-29 2020-10-27 Danfoss Silicon Power Gmbh Sintering tool for the lower die of a sintering device
WO2022029916A1 (fr) * 2020-08-05 2022-02-10 株式会社新川 Dispositif de montage et procédé de montage
TWI791287B (zh) * 2021-09-16 2023-02-01 日商新川股份有限公司 封裝裝置以及封裝方法
US11776932B2 (en) 2014-09-29 2023-10-03 Danfoss Silicon Power Gmbh Process and device for low-temperature pressure sintering

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Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10818633B2 (en) 2014-09-29 2020-10-27 Danfoss Silicon Power Gmbh Sintering tool for the lower die of a sintering device
CN107078069A (zh) * 2014-09-29 2017-08-18 丹佛斯硅动力有限责任公司 用于烧结电子子组件的烧结工具和方法
WO2016050468A1 (fr) * 2014-09-29 2016-04-07 Danfoss Silicon Power Gmbh Outil de frittage et procédé de frittage d'un sous-ensemble électronique
US10814396B2 (en) 2014-09-29 2020-10-27 Danfoss Silicon Power Gmbh Sintering tool and method for sintering an electronic subassembly
US10483229B2 (en) 2014-09-29 2019-11-19 Danfoss Silicon Power Gmbh Sintering device
CN107078069B (zh) * 2014-09-29 2020-10-27 丹佛斯硅动力有限责任公司 用于烧结电子子组件的烧结工具和方法
US11776932B2 (en) 2014-09-29 2023-10-03 Danfoss Silicon Power Gmbh Process and device for low-temperature pressure sintering
TWI655699B (zh) * 2015-12-08 2019-04-01 日商新川股份有限公司 Electronic component mounting device
JP2017107926A (ja) * 2015-12-08 2017-06-15 株式会社新川 電子部品実装装置
CN110651360B (zh) * 2017-03-30 2023-02-28 株式会社新川 接合装置以及接合方法
CN110651360A (zh) * 2017-03-30 2020-01-03 株式会社新川 接合装置以及接合方法
CN110654030A (zh) * 2018-06-28 2020-01-07 松下知识产权经营株式会社 部件压接装置、片材设置单元及片材设置单元的安装方法
JPWO2022029916A1 (fr) * 2020-08-05 2022-02-10
JP7268929B2 (ja) 2020-08-05 2023-05-08 株式会社新川 実装装置及び実装方法
WO2022029916A1 (fr) * 2020-08-05 2022-02-10 株式会社新川 Dispositif de montage et procédé de montage
TWI791287B (zh) * 2021-09-16 2023-02-01 日商新川股份有限公司 封裝裝置以及封裝方法

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KR102117726B1 (ko) 2020-06-01

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